TWI765489B - Mems device, manufacturing method of the same and integrated mems using the same - Google Patents

Abstract

A MEMS device includes a substrate having at least one contact. The MEMS device also includes a first dielectric layer disposed on the substrate. The MEMS device further includes at least one metal layer disposed on the first dielectric layer, and at least a portion of the metal layer electrically connected to the contact. The MEMS device includes a second dielectric layer disposed on the first dielectric layer and the metal layer and having a notch structure. The MEMS device also includes a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the notch structure, and the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the notch structure. The MEMS device further includes a filling layer, and at least a portion of the filling layer is disposed in the opening and the notch structure. The second dielectric layer, the structure layer and the filling layer define a chamber.

Description

Microelectromechanical system device, method of manufacturing the same, and integrated microelectromechanical system using the same

Embodiments of the present disclosure relate to a microelectromechanical system (MEMS) device, a method for fabricating the same, and an integrated MEMS device using the same, and more particularly, to a MEMS device with good sealing quality, and its fabrication A method and an integrated microelectromechanical system using the same.

Microelectromechanical systems (MEMS) devices typically include mechanical elements (fixed and/or movable) to sense a physical condition (such as force, acceleration, pressure, temperature, or vibration) and electronic elements to process electrical signals . Therefore, MEMS devices are often used as sensors and are widely used in applications such as automotive systems, inertial guidance systems, household appliances, protection systems for various devices, and many other industrial, scientific, and engineering systems.

Existing MEMS devices, while generally meeting the needs, are not satisfactory in every respect. For example, when a MEMS device is used as a pressure sensor, it may be necessary to provide an air-tight cavity, thus requiring good sealing quality. However, in order to achieve this purpose, problems such as long process time and complicated process may occur when manufacturing the existing MEMS device.

In some embodiments of the present disclosure, by arranging groove structures in the dielectric layer and arranging openings corresponding to the groove structures in the structure layer, the filling layer (ie, the structure for sealing holes) can be made continuous and uniform. Fill in the opening and groove structure to complete the sealing. By means of the MEMS device and the manufacturing method thereof of the disclosed embodiments, the generation of seams and hollow structures can be effectively prevented, thereby improving the sealing quality and improving the overall stability. In addition, no complicated process is required, which can effectively shorten the process time and reduce the cost.

Embodiments of the present disclosure include a MEMS device. The MEMS device includes a substrate, and the substrate has at least one contact. The MEMS device also includes a first dielectric layer disposed on the substrate. The MEMS device further includes at least one metal layer, the metal layer is disposed on the first dielectric layer, and at least part of the metal layer is electrically connected to the contacts. The MEMS device includes a second dielectric layer. The second dielectric layer is disposed on the first dielectric layer and the metal layer and has a groove structure. The MEMS device also includes a structure layer disposed on the second dielectric layer and having an opening. The openings are disposed corresponding to the groove structures, and the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the groove structure. The MEMS device further includes a filling layer, and the filling layer is arranged in the opening and the groove structure. The second dielectric layer, the structure layer and the filling layer define a cavity.

Embodiments of the present disclosure include a method for manufacturing a MEMS device. The manufacturing method of the MEMS device includes providing a substrate, and the substrate has at least one contact. The manufacturing method of the MEMS device also includes forming a first dielectric layer on the substrate. The first dielectric layer has at least one through hole that exposes a portion of the top surface of the contact. The manufacturing method of the MEMS device further includes forming at least one metal layer on the first dielectric layer. At least part of the metal layer is electrically connected to the contact. The manufacturing method of the MEMS device includes forming a second dielectric layer on the first dielectric layer and the metal layer. The second dielectric layer has a groove structure. The method of fabricating the MEMS device also includes forming a sacrificial layer on the second dielectric layer and in the groove structure. The manufacturing method of the MEMS device further includes forming a structure layer on the second dielectric layer and the sacrificial layer. The manufacturing method of the MEMS device includes removing part of the structure layer to form an opening exposing the sacrificial layer in the groove structure. The method of fabricating the MEMS device also includes removing the sacrificial layer to expose the groove structure. The cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the groove structure. The manufacturing method of the MEMS device further includes forming a filling layer in the opening and groove structure. At least part of the filling layer is formed in the opening and the groove structure, and the second dielectric layer, the structure layer and the filling layer define a cavity.

Embodiments of the present disclosure include a method for manufacturing a MEMS device. The manufacturing method of the MEMS device includes providing a substrate, and the substrate has at least one contact. The manufacturing method of the MEMS device also includes forming a first dielectric layer on the substrate. The first dielectric layer has at least one through hole that exposes a portion of the top surface of the contact. The manufacturing method of the MEMS device further includes forming at least one first metal layer on the first dielectric layer. At least part of the first metal layer is electrically connected to the contact. In addition, the manufacturing method of the MEMS device includes forming a second dielectric layer on the first dielectric layer and the first metal layer. The method of fabricating the MEMS device also includes forming a sacrificial layer on the second dielectric layer. The manufacturing method of the MEMS device further includes forming a structure layer on the second dielectric layer and the sacrificial layer. Furthermore, the method of fabricating the MEMS device includes removing part of the structural layer to form a first opening exposing part of the top surface of the sacrificial layer. The method of fabricating the MEMS device also includes removing a portion of the sacrificial layer through the first opening to form a second opening that exposes a portion of the top surface of the second dielectric layer. The manufacturing method of the MEMS device further includes removing part of the second dielectric layer through the second opening to form a groove structure. The cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the groove structure. In addition, the method of fabricating the MEMS device includes removing the sacrificial layer. The method of fabricating the MEMS device also includes forming a filling layer. At least part of the filling layer is formed in the second opening and groove structure, and the second dielectric layer, the structure layer and the filling layer define a cavity.

Embodiments of the present disclosure include an integrated micro-electro-mechanical system. The integrated MEMS is a plurality of the aforementioned MEMS devices. The MEMS devices share the same substrate.

The following disclosure provides many different embodiments or examples for implementing different features of the present invention. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the embodiment of the present disclosure describes that a first feature part is formed on or above a second feature part, it means that it may include an embodiment in which the first feature part and the second feature part are in direct contact. Embodiments may be included in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be understood that additional operational steps may be performed before, during, or after the method, and in other embodiments of the method, some of the operational steps may be substituted or omitted.

In addition, it may use spatially related terms such as "below", "below", "lower", "above", "above", "higher" and similar terms, These spatially relative terms are used for convenience in describing the relationship between one element or feature(s) and another element(s) or feature(s) in the figures, and these spatially relative terms include differences between devices in use or operation Orientation, and the orientation depicted in the drawings. When the device is turned in a different orientation (rotated 90 degrees or otherwise), the spatially relative adjectives used therein will also be interpreted according to the turned orientation.

In the specification, the terms "about", "approximately" and "approximately" usually mean within 20%, or within 10%, or within 5%, or within 3% of a given value or range, or within 2%, or within 1%, or within 0.5%. The quantity given here is an approximate quantity, that is, the meanings of "about", "approximately" and "approximately" can still be implied without the specific description of "about", "approximately" and "approximately".

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be construed to have meanings consistent with the relevant art and the context or context of the present disclosure, and not in an idealized or overly formal manner interpretation, unless there is a special definition in the embodiments of the present disclosure.

Different embodiments disclosed below may reuse the same reference symbols and/or labels. These repetitions are for the purpose of simplicity and clarity and are not intended to limit the specific relationship between the various embodiments and/or structures discussed.

FIGS. 1-8 are schematic cross-sectional views illustrating various stages of manufacturing the MEMS device 100 according to some embodiments. It should be noted that, in order to more clearly show the features of the embodiments of the present disclosure, some components may be omitted in FIGS. 1 to 8 .

Referring to FIG. 1 , first, a substrate 10 is provided, and the substrate 10 may have at least one contact 12 . In some embodiments, the substrate 10 may include silicon, but the embodiments of the present disclosure are not limited thereto. For example, in some other embodiments, the substrate 10 may include some other elemental semiconductor (eg, germanium). The substrate 10 may also include compound semiconductors (eg, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide). The substrate 10 may also include an alloy semiconductor (eg, germanium silicide, silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide).

In some embodiments, the substrate 10 may include a semiconductor on insulator (SOI), such as silicon-on-insulator or germanium-on-insulator. The aforementioned substrate including the semiconductor-on-insulator layer may include a base plate, a buried oxide layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide layer. In some embodiments, the substrate 10 may include a single crystal substrate, a multi-layer substrate, other suitable substrates, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto.

In some embodiments, the substrate 10 may include P-type dopants such as boron, aluminum, gallium, indium, thallium, or N-type dopants such as arsenic, phosphorus, and antimony. These dopants can form doped regions in the substrate 10 , and the doped regions can, for example, form a part of the contacts 12 , but the embodiments of the present disclosure are not limited thereto. In some embodiments, the substrate 10 can be regarded as a chip of the MEMS device 100 .

Referring to FIG. 1 , next, a first dielectric layer 20 is formed on the substrate 10 . In some embodiments, the material of the first dielectric layer 20 may include oxides such as silicon oxide, nitrides such as silicon nitride, other suitable materials, or combinations thereof, but the embodiments of the present disclosure are not limited thereto . In some embodiments, the first dielectric layer 20 may be deposited on the substrate 10 through a deposition process, the deposition process may include metal organic chemical vapor deposition (MOCVD), atomic layer deposition (atomic layer deposition) layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), similar processes, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto.

Referring to FIG. 2 , at least one through hole 20H is formed in the first dielectric layer 20 , and the through hole 20H may be disposed corresponding to the contact 12 and expose a portion of the top surface of the contact 12 . In some embodiments, a patterning process may be performed on the first dielectric layer 20 to form the vias 20H. For example, a mask layer (not shown) can be provided on the first dielectric layer 20 , and then an etching process can be performed using the aforementioned mask layer as an etching mask to etch the first dielectric layer 20 to form the through holes 20H . In some embodiments, the mask layer may include photoresist, such as positive photoresist or negative photoresist. The mask layer can be a single-layer or multi-layer structure. The formation of the mask layer may include a deposition process, a photolithography process, other suitable processes, or a combination of the foregoing, but the embodiment of the present disclosure is not limited thereto.

In some embodiments, the deposition process includes spin-on coating, chemical vapor phase deposition (CVD), atomic layer deposition, similar processes, or a combination of the foregoing. In some embodiments, the photolithography process may include photoresist coating (eg spin coating), soft baking, mask aligning, exposure, post-exposure bake ( post-exposure baking (PEB), developing (developing), rinsing (rinsing), drying (eg hard baking), other suitable processes, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto.

In some embodiments, the aforementioned etching process may include a dry etching process, a wet etching process, or a combination thereof. For example, the dry etching process may include reactive ion etching (RIE), inductively-coupled plasma (ICP) etching, neutron beam etching (NBE), electron cyclotron Electron cyclotron resonance (ECR) etching, a similar etching process, or a combination of the foregoing, but the embodiment of the present disclosure is not limited thereto.

Referring to FIG. 2 , next, a metal layer 30 is formed on the first dielectric layer 20 , wherein at least part of the metal layer 30 is electrically connected to the contact 12 . Specifically, as shown in FIG. 2 , the metal layer 30 includes a first portion 31 and a second portion 32 , the first portion 31 is in direct contact with the contact 12 through the through hole 20H of the first dielectric layer 20 , and the second portion 31 Portion 32 is separated from contact 12 by first dielectric layer 20 . That is, the first portion 31 of the metal layer 30 may be electrically connected to the contact 12 , and the second portion 32 of the metal layer 30 may be electrically insulated from the contact 12 , but the embodiment of the present disclosure is not limited thereto. For example, the first portion 31 of the metal layer 30 may be used to electrically connect the contact 12 to a subsequently formed structure.

In some embodiments, the material of the metal layer 30 may include gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten ( W), aluminum (Al), copper (Cu), other suitable materials, the aforementioned alloys or the aforementioned combinations, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the metallic material may be formed on the first dielectric by physical vapor deposition, chemical vapor deposition, atomic layer deposition, evaporation, sputtering, similar processes, or a combination of the foregoing. layer 20, but the embodiment of the present disclosure is not limited thereto. Next, a patterning process is performed on the metal material to form the first portion 31 and the second portion 32 of the metal layer 30 as shown in FIG. 2 . The example of the patterning process is as described above, so it is not repeated here.

Referring to FIG. 3 , a second dielectric layer 40 is formed on the first dielectric layer 20 and the metal layer 30 , and the second dielectric layer 40 has a groove structure 42 . Similarly, the material of the second dielectric layer 40 may include an oxide such as silicon oxide, a nitride such as silicon nitride, other suitable materials, or a combination of the foregoing, but the embodiment of the present disclosure is not limited thereto. In some embodiments, the material of the second dielectric layer 40 may be the same as or different from that of the first dielectric layer 20, which may be determined according to actual requirements. In some embodiments, the second dielectric layer 40 can be deposited on the first dielectric layer 20 and the metal layer 30 through a deposition process. Examples of the deposition process are as described above, and are not repeated here. In addition, a patterning process may be performed on the second dielectric layer 40 to form the groove structure 42 . For example, a mask layer (not shown) may be disposed on the second dielectric layer 40 , and then an etching process may be performed using the aforementioned mask layer as an etching mask to form the groove structure 42 . In some embodiments, the aforementioned etching process may include a dry etching process, a wet etching process, or a combination thereof.

As shown in FIG. 3 , in some embodiments, the groove structure 42 of the second dielectric layer 40 may expose part of the top surface of the first dielectric layer 20 , but the embodiments of the present disclosure are not limited thereto. In some embodiments, the groove structure 42 may also be disposed over the first dielectric layer 20 without exposing the first dielectric layer 20 ; alternatively, the groove structure 42 may also expose the second portion 32 of the metal layer 30 part of the top surface, which can be determined according to actual needs.

In some embodiments, the sidewalls 42S of the groove structure 42 may be substantially perpendicular to the top surfaces of the first dielectric layer 20 and the second dielectric layer 40 , but the embodiments of the present disclosure are not limited thereto. In the embodiment shown in FIG. 3, the groove structure 42 may have a constant cross-sectional area. That is, the cross-sectional area of the groove structure 42 at different depths may be substantially the same as the cross-sectional area 42TA of the top of the groove structure 42 , but the embodiment of the present disclosure is not limited thereto.

Referring to FIG. 4 , a sacrificial layer 50 is formed on the second dielectric layer 40 and in the groove structure 42 . Specifically, the sacrificial layer 50 may be formed on the bottom surface and part of the sidewalls 42S of the groove structure 42 and on part of the top surface of the second dielectric layer 40 . In some embodiments, the material of the sacrificial layer 50 may include silicon oxide, photoresist, polyimide, germanium, other suitable materials, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the sacrificial layer 50 and the first dielectric layer 20 , the metal layer 30 and the second dielectric layer 40 may have a high etch selectivity ratio. Therefore, in the subsequent process of removing the sacrificial layer 50 , the first dielectric layer 20 , the metal layer 30 and the second dielectric layer 40 can be prevented from being damaged. In some embodiments, the sacrificial layer 50 can be formed on the second dielectric layer 40 and in the groove structure 42 through a deposition process. Examples of the deposition process are as described above, and thus will not be repeated here.

Referring to FIG. 5 , a structural layer 60 is formed on the second dielectric layer 40 and the sacrificial layer 50 . Specifically, the structure layer 60 may be formed on the top surface of the second dielectric layer 40 and the top surface of the sacrificial layer 50 and fill the remaining space of the groove structure 42 . In some embodiments, the material of the structure layer 60 may include polysilicon, epitaxial silicon, silicon germanium, other suitable semiconductor materials, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the structural layer 60 and the sacrificial layer 50 may also have a high etch selectivity ratio. In some embodiments, the structure layer 60 can be formed on the second dielectric layer 40 and the sacrificial layer 50 and in the groove structure 42 through a deposition process. Examples of the deposition process are as described above, and are not repeated here. In some embodiments, structural layer 60 may be considered part of a microelectromechanical substrate.

Referring to FIG. 6 , a portion of the structural layer 60 is removed to form an opening 62 . Specifically, the opening 62 corresponds to the groove structure 42 (ie, the opening 62 is located above the groove structure 42 ), and the opening 62 can expose the sacrificial layer 50 located in the groove structure 42 . In some embodiments, a patterning process may be performed on the structural layer 60 to form the openings 62 . For example, a mask layer (not shown) may be disposed on the structure layer 60 , and then a dry etching process may be performed using the aforementioned mask layer as an etching mask to form the opening 62 in the structure layer 60 . Here, the etching gas used in the dry etching process includes, for example, CF ₄ , O ₂ , SF ₆ , C ₄ F ₈ , Ar, Cl ₂ , BCl ₃ , other suitable etching gases, or a combination of the foregoing, but the embodiments of the present disclosure Not limited to this.

Referring to FIG. 7, the sacrificial layer 50 is removed. Specifically, the sacrificial layer 50 located in the groove structure 42 and between the second dielectric layer 40 and the structural layer 60 is removed to expose the groove structure 42 . For example, a wet etching process may be performed on the sacrificial layer 50 to remove the sacrificial layer 50 . Here, the etching solution used in the wet etching process includes, for example, sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), hydrofluoric acid (HF), hydrogen peroxide (H ₂ O ₂ ), ammonia water (NH ₄ OH) etc., but the embodiments of the present disclosure are not limited thereto. Since the sacrificial layer 50 has a high etching selectivity ratio to the first dielectric layer 20 , the metal layer 30 , the second dielectric layer 40 and the structural layer 60 , in the process of removing the sacrificial layer 50 , the first dielectric layer can be prevented from being removed. The electrical layer 20 , the metal layer 30 , the second dielectric layer 40 and the structural layer 60 are damaged. In some embodiments, portions of the sacrificial layer 50 may also remain. For example, as shown in FIG. 7 , the remaining sacrificial layer 50 can be regarded as a remaining part 50R of the sacrificial layer, and the remaining part 50R of the sacrificial layer is located between the second dielectric layer 40 and the structural layer 60 , but the embodiment of the present disclosure Not limited to this. In some other embodiments, the sacrificial layer 50 may be completely removed.

As shown in FIG. 7 , in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area of the top 42TA of the groove structure 42 . Since the sacrificial layer 50 occupies part of the space between the second dielectric layer 40 and the structural layer 60 in the foregoing steps, after the sacrificial layer 50 is removed, the sidewalls 621 and the bottom of the sidewalls 622 of the opening 62 are not located at on the same plane. Here, the bottommost surface 60B of the structural layer 60 is extended, and the sidewall 621 of the opening 62 is extended. The cross-sectional area of the bottommost space formed by the two extending surfaces and the sidewall 622 of the opening 62 can be defined as the opening 62 The bottom cross-sectional area is 62BA (as shown in Figure 7).

As shown in FIG. 7 , in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62 . Specifically, the cross-sectional area of the opening 62 at different depths is not constant, but may vary continuously. For example, as shown in FIG. 7 , in the cross-section at this stage, the sidewall 621 and the sidewall 622 of the opening 62 may be presented as two inclined surfaces, but the embodiment of the present disclosure is not limited to this.

Referring to FIG. 8, a filling layer 70 is formed to form a MEMS device 100 according to an embodiment of the present disclosure. Specifically, at least part of the filling layer 70 can be formed in the opening 62 and the groove structure 42 , that is, the space where the opening 62 and the groove structure 42 are located can be continuously formed and filled, so that the second dielectric layer 40 , The structure layer 60 and the filling layer 70 may define a cavity 80 . In other words, the cavity 80 can partially or completely replace the space originally occupied by the sacrificial layer 50 between the second dielectric layer 40 and the structural layer 60 . That is, the cavity 80 is located between the second dielectric layer 40 , the structural layer 60 and the filling layer 70 . In addition, as shown in FIG. 8, in some embodiments, the cavity 80 is located between the second dielectric layer 40, the remaining portion 50R of the sacrificial layer, the structural layer 60 and the filling layer 70, thus, the height g of the cavity 80 is may be substantially equal to the thickness of the remaining portion 50R of the sacrificial layer.

In some embodiments, the material of the filling layer 70 may include silicon oxide, silicon nitride, photoresist, polyimide, other suitable materials, or a combination of the foregoing, but the embodiments of the present disclosure are not limited thereto. In some embodiments, a filling layer 70 can be formed in the opening 62 and the groove structure 42 through a deposition process. Examples of the deposition process are as described above, and thus are not repeated here. Here, the filling layer 70 can be regarded as a sealing structure of the MEMS device 100 . In addition, as shown in FIG. 8 , part of the filling layer 70 may also be formed on the structure layer 60 , but the embodiment of the present disclosure is not limited thereto.

As shown in FIG. 8 , in some embodiments, the groove structure 42 exposes a part of the top surface of the first dielectric layer 20 , so the filling layer 70 can directly contact the first dielectric layer 20 , but the embodiment of the present disclosure does not This is limited. In other embodiments, the groove structure 42 can be disposed above the first dielectric layer 20 without exposing the first dielectric layer 20 , so that the filling layer 70 can directly contact the second dielectric layer 40 .

In a MEMS device that generally does not have a groove structure, in the process of forming (depositing) the filling layer 70, since the formation (deposition) speed of the part corresponding to the center of the opening 62 is higher than that of the part far from the center of the opening 62 ( deposition) speed, easy to form sealed seams. On the contrary, since the MEMS device 100 of the disclosed embodiment includes the groove structure 42 corresponding to the opening 62 , the generation of the sealing seam can be effectively prevented.

Furthermore, in some embodiments of the present disclosure, since the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62 , the filling layer 70 can be formed in the opening 62 more uniformly, avoiding the formation of the filling layer 62 . 70 The hollow structure is formed by prematurely closing before filling the groove structure 42 and the opening 62 .

Therefore, in the MEMS device 100 of the disclosed embodiment, the filling layer can be formed by arranging the groove structure 42 in the second dielectric layer 40 and arranging the opening 62 corresponding to the groove structure 42 in the structure layer 60 . The opening 62 and the groove structure 42 are filled continuously and uniformly with the hole 70 (ie, the structure for sealing the hole) to complete the hole sealing. That is, the MEMS device 100 and the manufacturing method thereof of the disclosed embodiments can effectively prevent the generation of sealing seams and hollow structures, thereby improving the sealing quality and the overall stability of the MEMS device 100 . In addition, no complicated process is required, which can effectively shorten the process time and reduce the cost.

As shown in FIG. 8 , in some embodiments, the projection of the opening 62 of the structural layer 60 in the groove structure 42 has an end 60E1 (or 60E2 ), the end 60E1 (or 60E2 ) and the groove structure 42 The shortest distance d1 (or d2) of the top end 42E in the direction D parallel to the top surface of the second dielectric layer 40 (or the bottommost surface 60B of the structural layer 60 ) is greater than or equal to the sacrificial layer 50 (or the remaining part of the sacrificial layer 60 ). 50R) (ie, the height g of the cavity 80 ), but the embodiment of the present disclosure is not limited thereto. In the disclosed embodiment, the end portion 60E1 (or 60E2 ) and the top end 42E of the groove structure 42 are in the direction D parallel to the top surface of the second dielectric layer 40 (or the bottommost surface 60B of the structure layer 60 ). The shortest distance d1 (or d2 ) can be adjusted according to the depth of the groove structure 42 , which is not repeated here.

In the aforementioned embodiments, the sidewalls 42S of the groove structures 42 are substantially perpendicular to the top surfaces of the first dielectric layer 20 and the second dielectric layer 40 , but the embodiments of the present disclosure are not limited thereto. FIG. 9 is a schematic cross-sectional view illustrating the groove structure 44 according to another embodiment. Meanwhile, in order to show the features of the groove structure 44 more clearly, other components adjacent to the groove structure 44 are also shown in FIG. 9 .

Referring to FIG. 9 , the sidewalls 44S of the groove structures 44 are not perpendicular to the top surface of the second dielectric layer 40 . In some embodiments, the angle θ between the top surface of the second dielectric layer 40 and the sidewalls 44S of the groove structure 44 may be between 90 and 150 degrees, but the embodiment of the present disclosure is not limited thereto. When the angle θ between the top surface of the second dielectric layer 40 and the sidewall 44S of the groove structure 44 is 90 degrees, the sidewall 44S of the groove structure 44 is substantially perpendicular to the top surface of the second dielectric layer 40 .

Similarly, the projection of the opening 62 of the structural layer 60 into the groove structure 44 has an end 60E1 (or 60E2 ) that is parallel to the top 44E of the groove structure 44 in parallel with the second dielectric The shortest distance d1 (or d2 ) in the direction D of the top surface of the layer 40 is greater than or equal to the thickness of the sacrificial layer 50 (or the remaining portion 50R of the sacrificial layer) (ie, the height g of the cavity 80 ), which is not repeated here.

FIG. 10 is a schematic cross-sectional view illustrating the groove structure 46 according to yet another embodiment. Referring to FIG. 10, the sidewall 46S of the groove structure 46 may have an arc. The embodiments of FIGS. 9 and 10 illustrate different examples of the groove structure of the disclosed embodiment, but the groove structure of the disclosed embodiment can also be formed into other different shapes, depending on actual requirements.

FIG. 11 is a schematic cross-sectional view illustrating the MEMS device 102 according to some embodiments. The structure and manufacturing method of the MEMS device 102 shown in FIG. 11 are similar to the MEMS device 100 shown in FIG. 8 , the difference is that the groove structure 42 of the MEMS device 102 exposes the metal layer 30 A part of the top surface of the second part 32 of the metal layer 70 can directly contact part of the metal layer 30 (ie, the second part 32 of the metal layer 30 ), but the embodiment of the present disclosure is not limited thereto.

FIGS. 12-22 are schematic cross-sectional views illustrating various stages of manufacturing the integrated MEMS 1 according to some embodiments. FIG. 23 is a partial top view of the integrated MEMS 1 . Similarly, in order to more clearly show the features of the embodiments of the present disclosure, some components may be omitted in FIGS. 12 to 23 .

In some embodiments of the present disclosure, the integrated MEMS device 1 may include a plurality of MEMS devices (eg, the MEMS device 106 and the MEMS device 108 ). The structure of these MEMS devices can be similar to the MEMS device 100 shown in FIG. 8 or the MEMS device 102 shown in FIG. 11, and can be produced by the manufacturing method shown in FIGS. 1 to 8. formed, but the embodiments of the present disclosure are not limited thereto. FIGS. 12-22 may present methods of fabricating MEMS device 106 and MEMS device 108 that are different from the embodiments shown in FIGS. 1-8.

Referring to FIG. 12 , first, a substrate 10 is provided, and the substrate 10 may have a plurality of contacts 12 . Next, a first dielectric layer 20 is formed on the substrate 10 . Examples of the materials and forming methods of the substrate 10 and the first dielectric layer 20 are as described above, and are not repeated here.

Referring to FIG. 13 , a plurality of through holes 20H are formed in the first dielectric layer 20 , and the through holes 20H may be disposed corresponding to the contacts 12 and expose a portion of the top surface of the contacts 12 . Next, a metal layer 30 is formed on the first dielectric layer 20 , wherein at least part of the metal layer 30 is electrically connected to the contact 12 . Specifically, as shown in FIG. 13 , the metal layer 30 includes a plurality of first parts 31 and a plurality of second parts 32 , the first parts 31 are in direct contact with the contacts 12 through the through holes 20H of the first dielectric layer 20 , and The second portion 32 is separated from the contact 12 by the first dielectric layer 20 . That is, the first portion 31 of the metal layer 30 may be electrically connected to the contact 12 , and the second portion 32 of the metal layer 30 may be electrically insulated from the contact 12 , but the embodiment of the present disclosure is not limited thereto. Examples of the materials and forming methods of the first dielectric layer 20 and the metal layer 30 are as described above, and will not be repeated here.

Referring to FIG. 14 , a second dielectric layer 40 is formed on the first dielectric layer 20 and the metal layer 30 . Next, a sacrificial layer 50 is formed on the second dielectric layer 40 . Similarly, the sacrificial layer 50 and the first dielectric layer 20 , the metal layer 30 and the second dielectric layer 40 may have a high etch selectivity ratio. Therefore, in the subsequent process of removing the sacrificial layer 50 , the first dielectric layer 20 , the metal layer 30 and the second dielectric layer 40 can be prevented from being damaged. Examples of the materials and forming methods of the second dielectric layer 40 and the sacrificial layer 50 are as described above, and details are not repeated here.

Referring to FIG. 15 , a structural layer 60 is formed on the second dielectric layer 40 and the sacrificial layer 50 . Similarly, the structural layer 60 and the sacrificial layer 50 can also have a high etch selectivity ratio, and the structural layer 60 can be regarded as part of the MEMS substrate. Examples of the materials and forming methods of the structural layer 60 are as described above, and are not repeated here.

Referring to FIG. 16 , a portion of the structural layer 60 is removed to form an opening 62 . As shown in FIG. 16 , the opening 62 may expose a portion of the top surface 50T of the sacrificial layer 50 . In some embodiments, a patterning process may be performed on the structure layer 60 to remove portions of the structure layer 60 and form the openings 62 . Examples of the patterning process are as described above, and are not repeated here. In addition, as shown in FIG. 16 , when the patterning process is performed on the structure layer 60 , the openings 64 may also be formed simultaneously. The opening 64 can expose a part of the top surface 40T of the second dielectric layer 40 , and the MEMS device 106 and the MEMS device 108 formed later can be separated through the opening 64 , but the embodiment of the present disclosure is not limited thereto.

Referring to FIG. 17 , a portion of the sacrificial layer 50 is removed through the opening 62 to form an opening 52 that exposes a portion of the top surface 40T of the second dielectric layer 40 . For example, a patterning process may be performed on the sacrificial layer 50 to remove portions of the sacrificial layer 50 and form openings 52 . Examples of the patterning process are as described above, and are not repeated here.

Referring to FIG. 18 , a part of the second dielectric layer 40 is removed through the opening 52 to form a groove structure 42 . For example, a patterning process (eg, including a lateral etching process) may be performed on the second dielectric layer 40 to remove a portion of the second dielectric layer 40 and form the groove structure 42 . Examples of the patterning process are as described above, and are not repeated here.

Referring to FIG. 19, the sacrificial layer 50 is removed. For example, a wet etching process may be performed on the sacrificial layer 50 to remove the sacrificial layer 50 . The examples of the wet etching process are as described above, and are not repeated here. Similarly, since the sacrificial layer 50 and the first dielectric layer 20 , the metal layer 30 , the second dielectric layer 40 and the structural layer 60 all have a high etching selectivity ratio, during the process of removing the sacrificial layer 50 , it can prevent The first dielectric layer 20 , the metal layer 30 , the second dielectric layer 40 and the structural layer 60 are damaged. In this embodiment, the sacrificial layer 50 can be completely removed, but the embodiment of the present disclosure is not limited thereto. In some other embodiments, portions of the sacrificial layer 50 may also remain.

As shown in FIG. 19 , in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area of the top 42TA of the groove structure 42 . Furthermore, in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62 . Specifically, the cross-sectional area of the opening 62 at different depths is not constant, but may vary continuously. For example, as shown in FIG. 19 , in the cross-section at this stage, the sidewall 621 and the sidewall 622 of the opening 62 may be presented as two inclined surfaces, but the embodiment of the present disclosure is not limited to this.

In this embodiment, the sidewalls 42S of the groove structures 42 are substantially perpendicular to the top surface 40T of the second dielectric layer 40 (and/or the top surface of the first dielectric layer 20 ), but this is not the case in the embodiment of the present disclosure limited. In some other embodiments, the wet etching process can be adjusted (or controlled) to make the groove structure 42 similar to the groove structure 44 shown in FIG. 9 or the groove structure 46 shown in FIG. 10 . The shape and depth of the groove structure 42 can be adjusted according to actual needs.

Referring to FIG. 20, a filling layer 70 is formed. Specifically, at least part of the filling layer 70 can be formed in the opening 62 and the groove structure 42 , that is, the space where the opening 62 and the groove structure 42 are located can be continuously formed and filled, so that the second dielectric layer 40 , The structure layer 60 and the filling layer 70 may define a cavity 80 . In other words, the cavity 80 can partially or completely replace the space originally occupied by the sacrificial layer 50 between the second dielectric layer 40 and the structural layer 60 . That is, the cavity 80 is located between the second dielectric layer 40 , the structural layer 60 and the filling layer 70 . Examples of the material and forming method of the filling layer 70 are as described above, and are not repeated here.

Here, the filling layer 70 can be regarded as the sealing structure of the MEMS device 106 and the MEMS device 108 . In addition, as shown in FIG. 20 , part of the filling layer 70 may also be formed on the structural layer 60 and on the part of the top surface 40T of the second dielectric layer 40 and the sidewalls of the opening 64 exposed by the opening 64 , but The embodiments of the present disclosure are not limited thereto.

As shown in FIG. 20, in some embodiments, the groove structure 42 may be disposed above the first dielectric layer 20 without exposing the first dielectric layer 20, so that the filling layer 70 may directly contact the second dielectric layer layer 40, but the embodiment of the present disclosure is not limited thereto.

In a MEMS (device) that generally does not have a groove structure, in the process of forming (depositing) the filling layer 70 , the formation (deposition) speed of the portion corresponding to the center of the opening 62 is higher than that of the portion far from the center of the opening 62 . Formation (deposition) speed, easy formation of sealed seams. In contrast, in this embodiment, the groove structure 42 is formed through the opening 52 , and the opening 52 is formed through the opening 62 , so that the groove structure 42 can correspond to the opening 62 . Therefore, when the filling layer 70 is formed, the groove structure 42 can effectively prevent the generation of sealing seams.

Furthermore, in some embodiments of the present disclosure, since the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62 , the filling layer 70 can be formed in the opening 62 more uniformly, avoiding the formation of the filling layer 62 . 70 The hollow structure is formed by prematurely closing before filling the groove structure 42 and the opening 62 .

At this stage, the MEMS device 106 of the integrated MEMS 1 has been completed. In some embodiments, the MEMS device 106 can be used as a pressure sensor, but the embodiments of the present disclosure are not limited thereto. In the subsequent stages of FIGS. 21 to 22 , it is performed for the MEMS device 108 .

Referring to FIG. 21 , in some embodiments, a portion of the filling layer 70 may be removed to form an opening 72 that exposes a portion of the top surface 60T of the structural layer 60 . For example, as shown in FIG. 21, a portion of the fill layer 70 where the MEMS device 108 is to be formed may be removed to form the opening 72, but the fill layer 70 where the MEMS device 106 is to be formed is Complete reservation.

Next, a metal layer 90 may be formed on the filling layer 70 , wherein at least a portion of the metal layer 90 is formed in the opening 72 . Specifically, as shown in FIG. 21, the metal layer 90 may include a first portion 90-1 and a second portion 90-2, and the first portion 90-1 is in direct contact with the structural layer 60 (ie, the first portion 90-1 may be disposed in the opening 72), while the second portion 90-2 is in direct contact with the filling layer 70 (but separated from the structural layer 60). Examples of the material and forming method of the metal layer 90 may be the same as or similar to those of the metal layer 30 , and details are not repeated here.

Referring to FIG. 22 , in some embodiments, a third dielectric layer 92 may be formed on the filling layer 70 and the metal layer 90 . Specifically, as shown in FIG. 22 , the third dielectric layer 92 may cover the filling layer 70 and the metal layer 90 , but the embodiment of the present disclosure is not limited thereto. Examples of materials and forming methods of the third dielectric layer 92 may be the same as or similar to those of the first dielectric layer 20 or the second dielectric layer 40 , and details are not repeated here.

At this stage, the MEMS device 108 of the integrated MEMS 1 has been completed. In some embodiments, the MEMS device 108 can be used as a temperature sensor, but the embodiments of the present disclosure are not limited thereto.

22 and 23 simultaneously, the integrated MEMS device 1 may include a MEMS device 106 and a MEMS device 108 . The MEMS device 106 and the MEMS device 108 may share the same substrate 10 . In addition, the MEMS device 106 can be used as a pressure sensor, and the MEMS device 108 can be used as a temperature sensor. That is, according to some embodiments of the present disclosure, at least two MEMS devices with different structures or functions can be simultaneously formed in the integrated MEMS 1 . In contrast, in the conventional MEMS, different MEMS devices need to be formed individually and then integrated with each other through another circuit board. Compared with the conventional MEMS, the manufacturing method of the disclosed embodiment can effectively reduce the overall size of the integrated MEMS 1 and simplify the process steps.

It should be noted that the position and shape of the cavity 80 are not limited to those shown in FIG. 23 , and can be adjusted according to actual needs.

FIGS. 24 to 25 are schematic cross-sectional views illustrating different stages of manufacturing the integrated MEMS 1 according to some other embodiments. For example, the steps shown in FIG. 24 to FIG. 25 may replace the steps shown in FIG. 17 to FIG. 18 , but the embodiment of the present disclosure is not limited thereto. In addition, FIGS. 24 to 25 represent only one MEMS device, which may represent the MEMS device 106 or the MEMS device 108 .

Referring to FIG. 24, a portion of the sacrificial layer 50 is removed through the opening 62 to form the opening 52'. Here, the top area of opening 52' is not equal to the bottom area of opening 62. In this step, the position and depth of the subsequently formed groove structure will be determined. For example, as shown in FIG. 24 , in this embodiment, the opening 52 ′ can expose part of the top surface of the first dielectric layer 20 20T, but the embodiments of the present disclosure are not limited to this.

Referring to FIG. 25, a patterning process (eg, including a lateral etching process) is performed on the second dielectric layer 40 through the opening 52' to remove part of the second dielectric layer 40 and form the groove structure 42'. Next, the sacrificial layer 50 may be removed (partially or completely) following the steps shown in FIGS. 19 and 20 to form a filling layer 70 . In this embodiment, the groove structure 42' may expose a part of the top surface of the first dielectric layer 20, so the filling layer 70 may directly contact the first dielectric layer 20, but the embodiment of the present disclosure is not limited thereto.

FIGS. 26 to 29 are schematic cross-sectional views illustrating different stages of manufacturing the integrated MEMS 1 according to some other embodiments. For example, the steps shown in FIGS. 26 to 29 may replace the steps shown in FIGS. 21 to 22, but the embodiment of the present disclosure is not limited thereto. In addition, FIG. 29 only shows one MEMS device 110 , and the MEMS device 110 can replace the MEMS device 106 or the MEMS device 108 shown in FIG. 22 .

Referring to FIG. 26 , in some embodiments, a portion of the filling layer 70 may be removed to form an opening 72 that exposes a portion of the top surface 60T of the structural layer 60 . Next, a metal layer 90 may be formed on the filling layer 70 , and the metal layer 90 is formed in the opening 72 .

Referring to FIG. 27 , in some embodiments, a third dielectric layer 92 may be formed on the filling layer 70 and the metal layer 90 . Specifically, as shown in FIG. 27 , the third dielectric layer 92 may cover the filling layer 70 and the metal layer 90 , but the embodiment of the present disclosure is not limited thereto.

Referring to FIG. 28 , in some embodiments, a portion of the third dielectric layer 92 may be removed to form an opening 94 that exposes a portion of the top surface 90T of the metal layer 90 .

Next, a metal layer 96 may be formed on the third dielectric layer 92 , wherein at least a portion of the metal layer 96 is formed in the opening 94 . Specifically, as shown in FIG. 28, the metal layer 96 may include a first portion 96-1 and a second portion 96-2, and the first portion 96-1 is electrically connected to the metal layer 90 (ie, the first portion 96-1 1 may be disposed in the opening 94 and in direct contact with the metal layer 90 ), while the second portion 96 - 2 is electrically insulated from the metal layer 90 . Examples of materials and forming methods of the metal layer 96 may be the same as or similar to those of the metal layer 30 or the metal layer 90 , and details are not repeated here.

Referring to FIG. 29, in some embodiments, a hygroscopic layer 98 may be formed on the second portion 96-2 of the metal layer 96 to form the MEMS device 110. Referring to FIG. In some embodiments, the material of the hygroscopic layer 98 may include LiCl, Se, Ge, TiO ₂ , ZnCr ₂ O 4 , MgCr ₂ O ₄ , Al ₂ O ₃ , epoxy resin, porous metal oxide film, etc. , but the embodiments of the present disclosure are not limited thereto. In some embodiments, the moisture absorption layer 98 may be formed on the second portion 96-2 of the metal layer 96 through a deposition process and a patterning process, but the embodiments of the present disclosure are not limited thereto.

In some embodiments, the MEMS device 110 may be, for example, a humidity sensor, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the MEMS device 110 may be, for example, a gas sensor. For example, the sensing material of the gas sensor may include WO ₃ , SnO ₂ , etc., but the embodiment of the present disclosure is not limited thereto. The MEMS device 110 may replace at least one of the MEMS device 106 and the MEMS device 108 shown in FIG. 22 , or coexist in the integrated MEMS device 1 shown in FIG. 22 . That is, in the embodiments of the present disclosure, the integrated MEMS 1 can integrate MEMS devices with different sensing functions.

To sum up, in some embodiments of the present disclosure, by arranging the groove structure in the second dielectric layer and arranging the opening corresponding to the groove structure in the structure layer, the filling layer (that is, used for sealing the hole) can be formed. structure) is continuously and uniformly filled in this opening and groove structure to complete the sealing. In addition, by using the MEMS device and the manufacturing method thereof of the disclosed embodiments, the generation of sealing seams and hollow structures can be effectively prevented, thereby improving the sealing quality and improving the overall stability. Furthermore, no complicated manufacturing process is required, which can effectively shorten the manufacturing time and reduce the cost.

Furthermore, according to some embodiments of the present disclosure, at least two MEMS devices with different structures or functions can be simultaneously formed in the integrated MEMS 1 . Compared with the traditional MEMS, the manufacturing method of the embodiment of the present disclosure can effectively reduce the overall size of the integrated MEMS and simplify the process steps.

The components of several embodiments are summarized above, so that those with ordinary knowledge in the technical field to which the present disclosure pertains can better understand the viewpoints of the embodiments of the present disclosure. Those skilled in the art to which the present disclosure pertains should appreciate that they can, based on the embodiments of the present disclosure, design or modify other processes and structures to achieve the same purposes and/or advantages of the embodiments described herein. Those with ordinary knowledge in the technical field to which the present disclosure pertains should also understand that such equivalent structures do not deviate from the spirit and scope of the present disclosure, and they can make various changes without departing from the spirit and scope of the present disclosure. Various changes, substitutions and substitutions. Therefore, the scope of protection of the present disclosure should be determined by the scope of the appended patent application. In addition, although the present disclosure has been disclosed above with several preferred embodiments, it is not intended to limit the present disclosure.

Reference throughout this specification to features, advantages, or similar language does not imply that all of the features and advantages that can be realized with the present disclosure should or can be realized in any single embodiment of the present disclosure. Conversely, language referring to features and advantages is understood to mean that a particular feature, advantage or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of the features and advantages, and similar language, throughout this specification may, but do not necessarily, represent the same embodiment.

Furthermore, the described features, advantages and characteristics of the present disclosure may be combined in any suitable manner in one or more embodiments. From the description herein, one skilled in the relevant art will appreciate that the present disclosure may be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be recognized in certain embodiments that may not be present in all embodiments of the present disclosure.

1: Integrated MEMS 100, 102, 106, 108, 110: MEMS devices 10: Substrate 12: Contact 20: First Dielectric Layer 20H: Through hole 30: Metal layer 31: Part One 32: Part II 40: Second Dielectric Layer 40T: Top surface 42, 42', 44, 46: groove structure 42E, 44E: Top 42S, 44S, 46S: Sidewalls 42TA: Cross-sectional area at the top 50: Sacrificial Layer 50R: The remainder of the sacrificial layer 50T: Top surface 52,52': opening 60: Structural Layer 60B: Bottom most surface of the structural layer 60E1, 60E2: end 60T: Top surface 62: Opening 62BA: Cross-sectional area of the bottom 62TA: Cross-sectional area at the top 621, 622: Sidewalls 64: Opening 70: Filler layer 72: Opening 80: cavity 90: metal layer 90-1: Part One 90-2: Part II 92: The third dielectric layer 94: Opening 96: Metal layer 96-1: Part I and 96-2: Part II D: direction d1,d2: distance g: height θ: angle

The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the elements may be enlarged or reduced to clearly represent the technical features of the embodiments of the present disclosure. FIGS. 1-8 are schematic cross-sectional views illustrating various stages of fabricating a MEMS device according to some embodiments. FIG. 9 is a schematic cross-sectional view illustrating a groove structure according to another embodiment. FIG. 10 is a schematic cross-sectional view illustrating a groove structure according to yet another embodiment. FIG. 11 is a schematic cross-sectional view illustrating a MEMS device according to some embodiments. FIGS. 12-22 are schematic cross-sectional views illustrating various stages in the fabrication of an integrated MEMS system, according to some embodiments. FIG. 23 is a partial top view of the integrated MEMS. FIGS. 24-25 are schematic cross-sectional views illustrating different stages of manufacturing an integrated MEMS system according to some other embodiments. FIGS. 26 to 29 are schematic cross-sectional views illustrating different stages of manufacturing an integrated MEMS system according to some other embodiments.

100: MEMS Devices

10: Substrate

12: Contact

20: First Dielectric Layer

30: Metal layer

31: Part One

32: Part II

40: Second Dielectric Layer

42: groove structure

42E: Top

50R: The remainder of the sacrificial layer

60: Structural Layer

60B: Bottom most surface of the structural layer

60E1, 60E2: end

62: Opening

70: Filler layer

80: cavity

D: direction

d1,d2: distance

g: height

Claims (31)

A MEMS device, comprising: a substrate with at least one contact; a first dielectric layer disposed on the substrate; at least a first metal layer disposed on the first dielectric layer and at least partially The first metal layer is electrically connected to the contact; a second dielectric layer is disposed on the first dielectric layer and the first metal layer and has a groove structure; a structure layer is disposed on the first dielectric layer and the first metal layer The two dielectric layers have an opening, wherein the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the opening, the opening is disposed corresponding to the groove structure, and the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the groove structure and a filling layer at least partially disposed in the opening and the groove structure, wherein the second dielectric layer, the structure layer and the filling layer define a cavity. The MEMS device of claim 1, wherein the filling layer directly contacts the first dielectric layer or the second dielectric layer. The MEMS device of claim 1, further comprising: a remainder of the sacrificial layer disposed between the second dielectric layer and the structural layer, wherein the cavity is located between the second dielectric layer and the sacrificial layer The remaining part, between the structural layer and the filling layer. The MEMS device of claim 3, wherein the projection of the opening of the structural layer in the groove structure has an end, and the end and the top of the groove structure are parallel to the second dielectric The shortest distance in the direction of the top surface of the layer is greater than or equal to the thickness of the remainder of the sacrificial layer. The MEMS device of claim 1, wherein the angle between the top surface of the second dielectric layer and the sidewall of the groove structure is between 90 and 150 degrees. The MEMS device of claim 1, wherein the sidewall of the groove structure has an arc. The MEMS device of claim 1, wherein the first metal layer includes a first portion and a second portion, the first portion is electrically connected to the contact, and the second portion is electrically insulated from the contact . The MEMS device of claim 7, wherein the filling layer directly contacts the second portion. The MEMS device of claim 1, wherein part of the filling layer is disposed on the structural layer. A method of manufacturing a microelectromechanical system device, comprising: providing a substrate, the substrate having at least one contact; forming a first dielectric layer on the substrate, wherein the first dielectric layer has at least one through hole, the through hole exposing part of the top surface of the contact; forming at least one metal layer on the first dielectric layer, wherein at least part of the metal layer is electrically connected to the contact; forming on the first dielectric layer and the metal layer a second dielectric layer, wherein the second dielectric layer has a groove structure; a sacrificial layer is formed on the second dielectric layer and in the groove structure; the second dielectric layer and the sacrificial layer are formed A structural layer is formed on it; removing part of the structure layer to form an opening, wherein the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the opening, and the opening exposes the sacrificial layer in the groove structure; removing the sacrificial layer divided by exposing the groove structure, wherein the cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the groove structure; and forming a filling layer, wherein at least part of the filling layer is formed in the opening and the groove structure, And the second dielectric layer, the structure layer and the filling layer define a cavity. The method for manufacturing a MEMS device as claimed in claim 10, wherein the filling layer directly contacts the first dielectric layer or the second dielectric layer. The method for manufacturing a MEMS device as claimed in claim 10, wherein the projection of the opening of the structural layer in the groove structure has an end, and the end and the top of the groove structure are parallel to the first The shortest distance in the direction of the top surfaces of the two dielectric layers is greater than or equal to the thickness of the sacrificial layer. The method for manufacturing a MEMS device as claimed in claim 10, wherein the angle between the top surface of the second dielectric layer and the sidewall of the groove structure is between 90 and 150 degrees. The method for manufacturing a MEMS device as claimed in claim 10, wherein the sidewall of the groove structure has an arc. The method for manufacturing a MEMS device as claimed in claim 10, wherein in the step of forming the second dielectric layer, the groove structure of the second dielectric layer exposes a portion of the top surface of the metal layer. The method for manufacturing a MEMS device as claimed in claim 15, wherein the metal layer includes a first portion and a second portion, the first portion is electrically connected to the contact, and the second portion is electrically connected to the contact insulation. The method for manufacturing a MEMS device as claimed in claim 16, wherein the filling layer directly contacts the second part. A method of manufacturing a microelectromechanical system device, comprising: providing a substrate, the substrate having at least one contact; forming a first dielectric layer on the substrate, wherein the first dielectric layer has at least one through hole, the through hole exposing a part of the top surface of the contact; forming at least a first metal layer on the first dielectric layer, wherein at least part of the first metal layer is electrically connected to the contact; the first dielectric layer and the forming a second dielectric layer on the first metal layer; forming a sacrificial layer on the second dielectric layer; forming a structural layer on the second dielectric layer and the sacrificial layer; removing part of the structural layer To form a first opening, the first opening exposes part of the top surface of the sacrificial layer, wherein the cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the first opening; The sacrificial layer is removed to form a second opening, the second opening exposes part of the top surface of the second dielectric layer; part of the second dielectric layer is removed through the second opening to form a groove structure; wherein the cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the groove structure; removing the sacrificial layer; and forming a filling layer, wherein at least part of the filling layer is formed in the second opening and the groove In the structure, the second dielectric layer, the structure layer and the filling layer define a cavity. The manufacturing method of the MEMS device as claimed in claim 18, further comprising: removing part of the filling layer to form a third opening exposing part of the top surface of the structural layer; and forming a second metal layer on the filling layer, wherein at least part of the second metal layer is formed in the third opening. The method for manufacturing a MEMS device as claimed in claim 19, wherein the second metal layer comprises a first part and a second part, the first part is in direct contact with the structure layer, and the second part is in direct contact with the filling layer touch. The manufacturing method of the MEMS device as claimed in claim 19, further comprising: forming a third dielectric layer on the filling layer and the second metal layer. The manufacturing method of the MEMS device of claim 21, further comprising: removing part of the third dielectric layer to form a fourth opening, the fourth opening exposing part of the top surface of the second metal layer ; and forming a third metal layer on the third dielectric layer, wherein at least part of the third metal layer is formed in the fourth opening. The method for manufacturing a MEMS device as claimed in claim 22, wherein the third metal layer includes a first part and a second part, the first part is electrically connected to the second metal layer, and the second part is connected to the second part. The second metal layer is electrically insulating. The manufacturing method of the MEMS device as claimed in claim 23, further comprising: forming a moisture absorption layer on the second part. An integrated MEMS device includes: a plurality of MEMS devices as described in any one of claims 1 to 9, wherein the MEMS devices share the same substrate. The integrated MEMS device of claim 25, wherein one of the MEMS devices further comprises: a second metal layer disposed on a part of the top surface of the structure layer. The integrated MEMS of claim 26, wherein the second metal layer includes a first portion and a second portion, the first portion is in direct contact with the structural layer, and the second portion is in direct contact with the filling layer. The integrated MEMS device of claim 26, wherein one of the MEMS devices further comprises: a third dielectric layer disposed on the filling layer and the second metal layer. The integrated MEMS device of claim 28, wherein one of the MEMS devices further comprises: a third metal layer, wherein at least part of the third metal layer is disposed on a part of the top surface of the second metal layer superior. The integrated MEMS of claim 29, wherein the third metal layer includes a first part and a second part, the first part is electrically connected to the second metal layer, and the second part and the second metal Layer electrical insulation. The integrated micro-electromechanical system as claimed in claim 29, further comprising: a moisture absorption layer disposed on the second part.

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