CN102963856B

CN102963856B - Micro-electro-mechanical system device and method of manufacturing the same

Info

Publication number: CN102963856B
Application number: CN201210065676.XA
Authority: CN
Inventors: 谢聪敏; 李建兴; 刘志成
Original assignee: Solid State System Co Ltd
Current assignee: Solid State System Co Ltd
Priority date: 2011-09-01
Filing date: 2012-03-13
Publication date: 2016-04-27
Anticipated expiration: 2032-03-13
Also published as: CN102963856A

Abstract

The invention discloses a micro electro mechanical system device and a manufacturing method thereof. The MEMS device comprises a substrate, a first dielectric structure layer, a second dielectric structure layer and a MEMS diaphragm. The substrate is provided with a plurality of through holes in the diaphragm area and a recess space which can be selected according to requirements on the second surface. The first dielectric structure layer is configured on the first surface of the substrate, wherein the first dielectric structure layer is provided with a plurality of openings corresponding to the through holes, and each through hole is still exposed by the first dielectric structure layer. The second dielectric structure layer with a cavity is arranged on the first dielectric structure layer, wherein the cavity exposes the opening of the first dielectric structure layer and the through hole of the substrate and is connected to the concave space. The MEMS diaphragm is embedded in the cavity in the second dielectric structure layer, wherein an air gap is formed between the substrate and the MEMS diaphragm.

Description

MEMS devices and manufacture method thereof

Technical field

The present invention relates to a kind of MEMS devices, and particularly relate to a kind of MEMS devices structure and the manufacture method thereof with raising sensing function.

Background technology

MEMS (MicroElectroMechanicalSystem, MEMS) device starts little by little popular in recent years, as MEMS microphone, it is compared to traditional electret capacitor type (ECM) microphone and has comparatively good characteristic.The advantage of MEMS microphone comprises: 1. have compact size 2. for surface bonding type element (SMD), makes it can be assemblied in the sale flow process of product 3. easily and has high stability and high environmental resistance.But be compared to the encapsulation of integrated circuit (IC), microphone package needs from audible signal reception acoustic pressure, then cause mechanical actuation by acoustic pressure and convert the signal of telecommunication to.Therefore microphone package needs voice path to receive acoustic pressure and responds acoustic pressure with converter, and the background volume that converter must be provided enough is to reduce damped coefficient and to provide good shielding to avoid electromagnetic interference to protect it.At present, the most widely used packaged type is for be installed on printed circuit board (PCB) (PCB) by converter, and this printed circuit board (PCB) of electric property coupling, then the external conductive casing with a hole is connected to printed circuit board (PCB) with closed converter.

It is the sectional view of a MEMS device structure that Fig. 1 illustrates.In FIG, substrate 100 (as silicon substrate) to have by sidewall 108 limit to and correspond to the dented space of diaphragm area, and substrate 100 has multiple through hole 110 in the dented space of being limited to by sidewall 108.Dielectric structure layer 102 is formed on substrate 100, and supports MEMS vibrating diaphragm 106 periphery.Therefore, forming a clearance distance therebetween at MEMS vibrating diaphragm 106 and substrate 100 is the chamber of d.This chamber 112 connects the sunk area limited to by sidewall 108 by through hole 110, sensing sound makes MEMS vibrating diaphragm cause air pulsation, make capacitance between MEMS vibrating diaphragm 106 and substrate 100 also can along with change, and namely the change of capacitance can be exchanged into the signal of telecommunication.Therefore namely the MEMS device in Fig. 1 can be used as a MEMS microphone.

Fig. 2 is the circuit diagram of the MEMS microphone based on MEMS device.In fig. 2, the circuit capacitance that this circuit comprises MEMS sense capacitance Cmic, capacitance is Ccir, amplifier Amp and resistance value are the resistance of R.Capacitance is that the MEMS sense capacitance of Cmic can sense audio signal.According to this circuit, audio signal can be converted into output voltage signal Vout and export.

Can find out that output voltage signal Vout is proportional to Δ Cmic in fig. 2.If sense capacitance Cmic is larger, then output voltage signal Vout can be amplified to larger level, and therefore sensitivity also promoted.Because capacitance is inversely proportional to clearance distance d, so by reducing distance to increase the size of capacitance.But distance can not unconfinedly reduce.If the clearance distance of MEMS electric capacity is too small, structure can be made to be difficult to manufacture.

Traditionally, in order to improve the sensitivity of microphone, most effective method is for reducing the air gap (d).But, reduce the decline that vibrating diaphragm starting resistor can be caused in the air gap, cause lower peak to crest voltage VPP.Peak can make sensitivity decline to the reduction of crest voltage VPP, because starting resistor is proportional to electric-field intensity (E=VPP/d).If d declines, electric-field intensity will increase.

In addition, the leakage considering surface current is also needed.It is a sectional view with the MEMS structure of current leakage that Fig. 3 A illustrates.In figure 3 a, when MEMS vibrating diaphragm is positioned at voltage VPP and substrate is positioned at ground voltage, the leakage of just likely generation current on the surface of dielectric sidewall, as indicate leakage current arrow shown in.

Fig. 3 B is the circuit diagram of the MEMS microphone based on the MEMS device with current leakage.When current leakage occurs, an electric leakage resistance is that the dead resistance of Rleak is coupled to electric capacity Cmic, and in parallel with it, sensitivity is decayed and exports noise also can increase.

Due to capacitance and sensitivity and the distance dependent between MEMS vibrating diaphragm and substrate.How to make MEMS device have high capacity, simultaneously but do not have the situation of current leakage to occur, be still a problem to be improved.

Summary of the invention

For solving the problem, the present invention proposes a kind of MEMS devices, and it comprises a substrate, one first dielectric structure layer, one second dielectric structure layer and a MEMS vibrating diaphragm.Substrate has the structure of first surface and second surface, and the substrate wherein in diaphragm area has multiple through hole.First dielectric structure layer is configured on the first surface of substrate, and wherein the first dielectric structure layer has multiple opening corresponding to those through holes, and wherein the first dielectric structure layer still exposes each through hole.The second dielectric structure layer with chamber is configured on the first dielectric structure layer, and wherein this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.MEMS vibrating diaphragm is embedded on the chamber in the second dielectric structure layer, and wherein substrate and MEMS vibrating diaphragm form a air gap therebetween.

The present invention also proposes a kind of MEMS devices, and it comprises a substrate, a supporting layer, one first dielectric structure layer, one second dielectric structure layer and a MEMS vibrating diaphragm.Substrate has a vibrating diaphragm opening in diaphragm area.Supporting layer is configured on substrate, and in order to cover vibrating diaphragm opening, wherein supporting layer has multiple through hole in diaphragm area, makes the through hole of supporting layer be connected to the opening of vibrating diaphragm.First dielectric structure layer is configured on the first surface of substrate, and wherein the first dielectric structure layer has multiple opening corresponding to those through holes, and wherein the first dielectric structure layer still exposes each through hole.Second dielectric structure layer has a chamber configuration on the first dielectric structure layer, and wherein this chamber exposes the opening of the first dielectric structure layer.MEMS vibrating diaphragm to be positioned on this chamber and to be embedded in the second dielectric structure layer, and wherein the air gap is formed at supporting layer and MEMS vibrating diaphragm therebetween.

The present invention also proposes a kind of method manufacturing microelectromechanicdevices devices, and it comprises the substrate providing to have first surface and a second surface, on first surface, then form the first dielectric layer that one deck has the first dielectric etch speed; First dielectric layer is formed the dielectric mask layer that one deck has the second dielectric etch speed, and wherein the second dielectric etch speed is less than the first dielectric etch speed; On dielectric mask layer, form the second dielectric layer that one deck has the 3rd dielectric etch speed, wherein the first dielectric etch speed is less than the 3rd dielectric etch speed; Second dielectric layer is formed one deck top dielectric structure sheaf, and wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, make substrate in diaphragm area, have multiple through hole, wherein through hole exposes the first dielectric layer.The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft (Isotropicetchingprocess), and wherein the through hole of substrate makes isotropic etching manufacture craft etch by the first dielectric layer.Isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, dielectric mask layer, the second dielectric layer and top dielectric structure sheaf, to expose MEMS vibrating diaphragm.First dielectric layer etches and forms multiple opening corresponding to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention also proposes a kind of method manufacturing microelectromechanicdevices devices, and it comprises the substrate providing to have first surface and a second surface, on first surface, then form the first dielectric layer that one deck has the first dielectric etch speed; First dielectric layer is formed the patterned mask layer that one deck has the second dielectric etch speed, and wherein the second dielectric etch speed is less than the first dielectric etch speed; On patterned mask layer, form the second dielectric layer that one deck has the 3rd dielectric etch speed, wherein the first dielectric etch speed is less than the 3rd dielectric etch speed; Second dielectric layer is formed one deck top dielectric structure sheaf, and wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, make substrate in diaphragm area, have multiple through hole, wherein through hole exposes the first dielectric layer.The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft, and wherein the through hole of substrate makes isotropic etching manufacture craft etch by the first dielectric layer.When patterned mask layer is as etching photomask, isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, the second dielectric layer and top dielectric structure sheaf, and exposes MEMS vibrating diaphragm.First dielectric layer etches the multiple openings being formed and correspond to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention proposes a kind of method manufacturing microelectromechanicdevices devices, comprises the substrate that use one has first surface and second surface, forms the first dielectric layer that one deck has the first dielectric etch speed on the first surface; First dielectric layer is formed the second dielectric layer that one deck has the second dielectric etch speed, and wherein the first dielectric etch speed is less than the second dielectric etch speed; Second dielectric layer is formed one deck top dielectric structure sheaf, and wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, make substrate in diaphragm area, have multiple through hole, wherein through hole exposes the first dielectric layer.The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft, and wherein the through hole of substrate makes isotropic etching manufacture craft etch by the first dielectric layer.Isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, the second dielectric layer and top dielectric structure sheaf, and exposes MEMS vibrating diaphragm.First dielectric layer etches the multiple openings being formed and correspond to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention also proposes a kind of method manufacturing microelectromechanicdevices devices, comprises the substrate that use one has first surface and second surface.Form first dielectric layer with the first dielectric etch speed at the first surface of substrate, the conductive plate wherein in diaphragm area with multiple opening is embedded among the first dielectric layer; First dielectric layer is formed the mask layer that one deck has the second dielectric etch speed, and wherein the second dielectric etch speed is less than the first dielectric etch speed; On mask layer, form the second dielectric layer that one deck has the 3rd dielectric etch speed, wherein the first dielectric etch speed is less than the 3rd dielectric etch speed; Second dielectric layer is formed one deck top dielectric structure sheaf, and wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, makes the substrate in diaphragm area obtains multiple through hole, wherein through hole expose the first dielectric layer and by conductive plate institute around.The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft, and wherein the through hole of substrate makes isotropic etching manufacture craft etch by the first dielectric layer.Isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, the second dielectric layer and top dielectric structure sheaf, and exposes MEMS vibrating diaphragm.First dielectric layer etches the multiple openings being formed and correspond to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention also proposes a kind of method manufacturing microelectromechanicdevices devices, comprises the substrate that use one has first surface and second surface.Substrate is formed one deck patterned conductive layer, and wherein patterned conductive layer has multiple through hole in diaphragm area; The first surface of patterned conductive layer and substrate forms the first dielectric layer that one deck has the first dielectric etch speed, and wherein dielectric block is embedded in the first dielectric layer on patterned conductive layer, and around the through hole on this substrate; First dielectric layer is formed the mask layer that one deck has the second dielectric etch speed, and wherein the second dielectric etch speed is less than the first dielectric etch speed; On mask layer, form the second dielectric layer that one deck has the 3rd dielectric etch speed, wherein the first dielectric etch speed is less than the 3rd dielectric etch speed; Second dielectric layer is formed one deck top dielectric structure sheaf, and wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, makes substrate have opening corresponding to this vibrating diaphragm, exposes conductive layer to make through hole.The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft, and wherein the through hole of patterned conductive layer makes isotropic etching manufacture craft etch by the first dielectric layer.Isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, mask layer, the second dielectric layer and top dielectric structure sheaf, and exposes MEMS vibrating diaphragm.First dielectric layer etches the multiple openings being formed and correspond to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention also proposes a kind of method manufacturing microelectromechanicdevices devices, comprises the substrate that use one has first surface and second surface.Substrate is formed one deck supporting layer, and wherein supporting layer has multiple through hole in diaphragm area; Supporting layer is formed one deck patterned conductive layer, and wherein patterned conductive layer has the multiple openings corresponding to through hole; The first surface of patterned conductive layer and substrate forms the first dielectric layer that one deck has the first dielectric etch speed, and wherein this dielectric layer is embedded in multiple dielectric block on patterned conductive layer, and is centered around the through hole on substrate; First dielectric layer is formed the mask layer that one deck has the second dielectric etch speed, and wherein the second dielectric etch speed is less than the first dielectric etch speed.On mask layer, form the second dielectric layer that one deck has the 3rd dielectric etch speed, wherein the first dielectric etch speed is less than the 3rd dielectric etch speed.Second dielectric layer is formed one deck top dielectric structure sheaf, wherein this dielectric structure layer comprises MEMS vibrating diaphragm.The second surface of patterned substrate, makes substrate have opening corresponding to vibrating diaphragm, to expose the supporting layer with through hole; The second surface and top dielectric structure sheaf of substrate carry out isotropic etching manufacture craft, and wherein the through hole of patterned conductive layer makes isotropic etching manufacture craft etch by the first dielectric layer.Isotropic etching manufacture craft continues the dielectric material of etching first dielectric layer, mask layer, the second dielectric layer and top dielectric structure sheaf, and exposes MEMS vibrating diaphragm.First dielectric layer etches the multiple openings being formed and correspond to through hole under the first dielectric etch speed, the second dielectric etch speed and the 3rd dielectric etch speed, and the first dielectric structure layer still exposes each through hole, and the second dielectric layer etch forms chamber, this chamber exposes the opening of the first dielectric structure layer and the through hole of substrate, to extend to space outerpace.

The present invention proposes a kind of method manufacturing microelectromechanicdevices devices, comprises the substrate that use one has first surface and second surface.The first surface of substrate is formed one deck first dielectric framework layer; This dielectric layer of patterning, makes this dielectric layer have multiple opening; This dielectric layer is formed the surface that mask layer exposes to cover this dielectric layer completely; Substrate and the first dielectric framework layer are formed layer second dielectric framework layer, and wherein vibrating diaphragm is embedded in the second dielectric framework layer; The second surface of this substrate of patterning is to form multiple through hole, and wherein through hole corresponds to the opening of the first dielectric structure layer; Carry out an isotropic etching manufacture craft to etch the dielectric material of this second dielectric structure layer until vibrating diaphragm is released.

The present invention proposes a kind of MEMS devices, comprises a structural substrate, a dielectric and a MEMS diaphragm structure layer.Structural substrate has a first surface and a second surface, wherein this substrate in a diaphragm area in there is multiple through hole.Dielectric structure layer is configured on this first surface of this substrate, and wherein this dielectric structure layer has a chamber, and at a part of dielectric layer of this cavity bottom, this part of dielectric layer has multiple opening and corresponds to those through holes, and those openings expose those through holes.

MEMS vibrating diaphragm, being positioned on this chamber and being embedded in this dielectric structure layer, wherein this substrate and this MEMS vibrating diaphragm form a air gap therebetween.

The present invention proposes a kind of method manufacturing MEMS devices, comprises and provides a substrate, and this substrate has a first surface and a second surface.The method also forms a supporting layer on this substrate first surface, and wherein this supporting layer has multiple through hole in a diaphragm area.This supporting layer is formed a patterned conductive layer, and wherein this patterned conductive layer has multiple first openings corresponding to those through holes.This first surface of this patterned conductive layer and this substrate forms one first dielectric layer, this first dielectric layer of patterning, this first dielectric layer is made to have multiple opening, wherein this patterning first dielectric layer has multiple second openings corresponding to those through holes, and this patterned conductive layer is still arranged in this pattern dielectric layer.This first dielectric layer is formed the surface that a mask layer exposes to cover this first dielectric layer completely, and around those through holes of this supporting layer.This substrate and this first dielectric layer form one second dielectric layer, and wherein a vibrating diaphragm and the etching mask be positioned on this vibrating diaphragm periphery are embedded in this second dielectric layer.This second surface of this substrate of patterning, makes this substrate have one and corresponds to an opening of this vibrating diaphragm, and expose this supporting layer with those through holes.An isotropic etching manufacture craft is carried out to etch the dielectric material of this second dielectric layer until this vibrating diaphragm is released on the substrate from this second surface and with this second surface.

For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended accompanying drawing to be described in detail below.

Accompanying drawing explanation

Fig. 1 is the sectional view of a MEMS device structure;

Fig. 2 is the circuit diagram of the MEMS microphone based on MEMS device;

Fig. 3 A is a sectional view with the MEMS device structure of current leakage;

Fig. 3 B is one based on the circuit diagram of MEMS microphone of MEMS device with current leakage;

Fig. 4 is the cross-section structure of the MEMS device of one embodiment of the invention;

Fig. 5 A is MEMS device schematic diagram identical with the top view structure of Fig. 1 in one embodiment of the invention;

Fig. 5 B-Fig. 5 D is sectional view and the top view of the MEMS device structure of one embodiment of the invention;

Fig. 6 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Fig. 7 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Fig. 8 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Fig. 9 is MEMS device schematic diagram identical with the top view structure of Fig. 8 in one embodiment of the invention;

Figure 10 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Figure 11 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Figure 12 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Figure 13 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Figure 14 A-Figure 14 H is the sectional view of the manufacturing process of one embodiment of the invention;

Figure 15 A-Figure 15 F is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 16 A-Figure 16 E is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 17 A-Figure 17 F is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 18 A-Figure 18 E is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 19 A-Figure 19 E is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 20 A-Figure 20 H is the sectional view of the manufacture MEMS device flow process of another embodiment of the present invention;

Figure 21 is the sectional structure chart of the MEMS device structure of one embodiment of the invention;

Figure 22 is the sectional structure chart of the MEMS device structure of one embodiment of the invention.

Main element symbol description

100,250,300,350,400,450,500: substrate

102,102 ', 124,126,700: dielectric structure layer

104,212,217,308,364,414,462: etching mask layer

106,208,258,310,366,416,464,512:MEMS vibrating diaphragm

106a, 106c: conductive layer

106b: dielectric layer

108,214,264,312,466,516: sidewall

110,110 ', 218,266,370,402a, 404a, 452a, 454a: through hole

112,132,226,270,320,376,474,524,708: chamber

120a, 220a, 252a, 302a, 354a, 702: part dielectric

122,204,408,456,504,514: mask layer

123: photomask clearance wall

126,202,206,210,252,256,260,302,304,306,354,360,362,402,410,412,452,458,460,502,510: dielectric layer

130,130 ', 224,255,268,318,372,374,422,470,472,506,522,704: opening

134: diaphragm area

140,140 ', 406: dielectric block

140 ": single conductive layer

142,356,404: conductive plate

152: conductive plate layer

153,454: supporting layer

216,253: photoresist oxidant layer

220: go photoresist manufacture craft

222,316,420,468: isotropic etching manufacture craft

254: hard mask layer

508: mask layer

1500,1500 ': MEMS sectional view structure

1502,1502 ': MEMS top view structure

Detailed description of the invention

The present invention proposes a kind of novel MEMS devices, and it can promote the capacitance of MEMS electric capacity when not reducing MEMS capacitance gauge.

Consider as the MEMS devices with traditional structure in Fig. 1, the capacitance of its Cmic meets:

(1)Cmic＝ε _air·A/d.

Can find that the capacitance of Cmic also increases by promoting effective dielectric constant thus.With semiconductor fabrication process technology now, the manufacture craft that semiconductor framework proposed by the invention need not increase additional difficulty can manufacture.

Several embodiment is below proposed to describe the present invention.But the present invention is not limited only to those embodiments.In addition, each embodiment also can combine by rights.

Fig. 4 illustrates the cross-section structure into the MEMS device according to one embodiment of the invention.In the diagram, substrate 100 (as silicon substrate) has first surface and second surface, and in the diaphragm area of presetting, substrate 100 forms a dented space of being limited to by sidewall 108 at second surface.In an embodiment, the dented space of being limited to by sidewall 108 can be circular sunk structure.Then, in diaphragm area, substrate 100 defines multiple through hole 110.The dented space that sidewall 108 limits to reduces the thickness of substrate 100, makes through hole 110 can not be thick as original substrate 100.

First dielectric structure layer 102 is configured on the first surface of substrate.At this, due to some intraconnections of embedding in manufacture craft or device, make dielectric structure layer also may comprise other internal structure several.But the part only about MEMS device just can represent among single dielectric layer structure.First dielectric structure layer 102 has multiple opening 130, and it corresponds to the through hole 110 of substrate 100.The opening 130 of the first dielectric structure layer 102 still exposes each through hole 110.In manufacture craft operation, mask layer 122 is configured on the first dielectric structure layer 102.The dielectric structure layer 124 with opening is configured at the first dielectric structure layer 102, and it can form chamber 132 after manufacture craft completes.The chamber 132 of dielectric structure layer 124 exposes the opening 130 of the first dielectric structure layer 102 and the through hole 110 of substrate 100.Then, chamber 132 is connected to the dented space that substrate is limited to by sidewall 108.Air can be circulated to the dented space of being limited to by sidewall 108 from chamber 132, and is even circulated among environment via through hole 110 and opening 130.

From the structure viewpoint of MEMS device, it needs extra dielectric layer 126 and MEMS vibrating diaphragm 106 to be configured on dielectric layer 124.As the first dielectric structure layer 102, dielectric layer 126 and dielectric layer 124 can be regarded as the second dielectric layer, therefore MEMS vibrating diaphragm 106 is embedded in the second dielectric structure layer and covers the opening of chamber 132, and this second dielectric structure layer is confined to MEMS vibrating diaphragm 106 and the first dielectric structure layer 102 therebetween, and it not necessarily has mask layer.The air gap of a distance d is formed at substrate and vibrating diaphragm therebetween.This is for there being usual operator can apparent to this field, MEMS vibrating diaphragm 106 can have other different structures, as Wave-shaped structural.But the vibrating diaphragm 106 in embodiment is with representated by a flatness layer without specific restriction.Dielectric layer 126 is formed etching mask layer 104, etching mask layer 104 in back segment manufacture craft in order to the etching photomask as isotropic etching manufacture craft, therefore the part dielectric on MEMS vibrating diaphragm 106 also can be etched, to expose MEMS vibrating diaphragm 106 from top.

Based on this structure, the capacitance had between the MEM vibrating diaphragm 106 of the same distance d and substrate 100 will be promoted, because dielectric layer (if thickness is the silica of dox) has the dielectric constant being greater than in air about four times.For example, have the region Aox of part dielectric structure layer 102, it has larger dielectric constant (as silica is about 4).The region being denoted as Aair still maintains the dielectric material of script in air, makes air-flow sense sound.Dielectric constant in air is about 1.

In general, can thus promote at substrate 100 and MEMS vibrating diaphragm MEMS electric capacity effective dielectric constant therebetween.Therefore, the raising that capacitance also can be relative.

Fig. 5 A illustrates as MEMS device schematic diagram identical with the top view structure of Fig. 1 in foundation one embodiment of the invention.

Fig. 5 A is a sectional view structure 1500 being applied to the MEMS device of MEMS microphone.MEMS device is also illustrated in the top view structure 1502 in Fig. 5 A in the top view structure 1502 of diaphragm area 134.The geometry of vibrating diaphragm is generally circular, and it corresponds to the dented space of being limited to by sidewall 108.Dielectric structure layer 102 has multiple opening 130 and is connected to through hole 110 on substrate 100.The part dielectric 120a of dielectric structure layer 102 refers to the part in diaphragm area 134.Diameter due to through hole 110 is less than the opening 130 of dielectric structure layer 102 usually, still can see the neighboring area of through hole 110 in top view.

It can thus be appreciated that chamber 132 is sloped sidewall with the sidewall of opening 130.Sloped sidewall via in single isotropic etching manufacture craft used in the present invention, can select suitable etch-rate for different material layer.In other words, the structure of part dielectric 120a can be formed easily without other patterning manufacture craft.

Under the considering of same enhancement capacitance, above-mentioned structure can be made and further revise.Fig. 5 B-Fig. 5 D illustrates as according to the sectional view of MEMS device structure of embodiments of the invention and top view.

In Fig. 5 B, the structure proximate of MEMS device is in the structure shown in Fig. 5 A.Difference in embodiment is the sunk area of the substrate 100 in this embodiment not necessarily.Through hole 100 is by the thickness of integrated substrate 100.In other words, whether the dented space of being limited to by sidewall 108 can be selected will be formed according to actual design.In ensuing embodiment, still have this sunk area.But substrate 100 can replace with the substrate 100 in Fig. 5 B without dented space, and all depend on actual design.

In Fig. 5 C, the structure proximate of MEMS device is in the structure shown in Fig. 5 A.But on substrate 100, the geometry of through hole 110 is non-essential is circular, but can be any suitable shape.For example, through hole 110 also can be square or rectangle.In other words, the geometry of through hole is not defined as the specific geometry that embodiment illustrates.Any other suitable geometrical form all goes for the present invention.It can thus be appreciated that the geometry of opening 130 also adjusts according to the geometry of through hole.The geometry of through hole 110 even can be not identical with the geometry of opening 130.Opening 130 exposes through hole 110, and it can separate separately or be connected.In the present embodiment, adjacent opening 130 is connected.

But it can be revised by different way.The dielectric structure layer 102 ' with opening 130 ' is configured on substrate 100, and this substrate 100 has dented space in the present example.Mask layer 122 is configured at dielectric structure layer 102 ' and dielectric structure layer 126 ' therebetween.Mask clearance wall defines the sidewall of opening 130 '.In the structure, mask clearance wall and mask layer are formed simultaneously, and it is positioned between two dielectric structure layers 102 ' and 126 ', and as the part of mask layer.Dielectric structure layer 126 ' is also with vibrating diaphragm 106.In this structure, different manufacture crafts forms the opening of dielectric structure layer 102 ', and in the different manufacture crafts next described, the sidewall of through hole is not tilt substantially.But the impact increasing the capacitance of MEMS device is still identical.In other words, any suitable manufacture craft all can manufacture opening, and may cause different structures.

Below illustrate further other MEMS structure.Fig. 6 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.In figure 6, similar to the structure of Fig. 4, substrate 100 (as silicon substrate) has first surface and second surface, and in the diaphragm area of presetting, substrate 100 forms a dented space of being limited to by sidewall 108 at second surface.In one example in which, the dented space of limiting to for sidewall 108 can be a large circular depressed structure.Then, in diaphragm area, substrate 100 defines multiple through hole 110.The dented space that sidewall 108 limits to reduces the thickness of substrate 100, makes through hole 110 can not be thick as original substrate 100.

First dielectric structure layer 102 is configured on the first surface of substrate.At this, due to some intraconnections of embedding in manufacture craft or device, make dielectric structure layer 102 also may comprise other internal structure several.But the part only about MEMS device just can represent among single dielectric layer structure.First dielectric structure layer 102 has multiple opening 130, and it corresponds to the through hole 110 of substrate 100.The opening 130 of the first dielectric structure layer 102 still exposes each through hole 110.In manufacture craft operation, mask layer 122 ' at the periphery of diaphragm area, and is configured on the first dielectric structure layer 102.In fact, the mask layer 122 ' in Fig. 6 is similar to the mask layer 122 in Fig. 4.But because the manufacture craft action need of isotropic etching expends considerable time, mask layer 122 inside in vibrating diaphragm further etches away.Therefore the structure of mask layer 122 ' is become.

Similarly, the structure sheaf 124 with opening is configured on the first dielectric structure layer 102, in order to form chamber 132 after manufacture craft completes.The chamber 132 of dielectric structure layer 124 exposes the opening 130 of the first dielectric structure layer 102 and the through hole 110 of substrate 100.Right time, chamber 132 is connected to the sunk area limited to by sidewall 108 on substrate.The sunk area that air can limit to from chamber 132 circulation road sidewall 108, and further flowed in environment by through hole 110 and opening 130.

Following proposition one has the embodiment of another kind of structure as shown in Figure 7, and Fig. 7 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.In the figure 7, main MEMS structure is still based on the MEMS structure in Fig. 4.But the part dielectric 120a in the dielectric structure layer 102 in the sunk area that diaphragm area or sidewall 108 are limited to embedded in multiple dielectric block 140.Dielectric block 140 is made up of dielectric material, and by conductive wall institute around.Conductive wall comprises vertical wall and the horizontal wall on vertical wall.In an embodiment, the block 140 that insulate can close each or some of them through hole 110.The vertical wall of dielectric block 140 is contacted with on substrate, and its horizontal cover layer is positioned at the top of vertical wall.Have in this field and usually know the knowledgeable, can apparent in order to form vertical wall and horizontal cover layer, it needs several dielectric layers, in order in secondary dielectric layer pattern and deposits conductive material.But institute's dielectric layer in need represents all in dielectric structure layer 102.Dielectric block 140 contact substrate 100 can be expanded and closer to MEMS vibrating diaphragm.Therefore, the impact of clearance distance in electric capacity can be reduced, capacitance is promoted.Dielectric block 140 may just in diaphragm area, and not in the neighboring area of dielectric structure layer 102.But it has no particular limits.Dielectric block can condition be opened to neighboring area.In addition, the section joint structure of dielectric block 140 is also not limited in the mode represented by embodiment.

Embodiment in the figure 7 also can find mask layer 122 still on part dielectric 120a.But the mask layer 122 on part dielectric 120a also may be etched away by unconfined, similarly be shown in Fig. 6 structure.Have in MEMS device identical label other structure divisions be identical structure, therefore no longer repeat.

Next reintroduce the embodiment of another kind of framework as shown in Figure 8, Fig. 8 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.In fig. 8, the primary structure of MEMS device is also based on the structure in Fig. 4 and Fig. 7.But the dielectric structure layer 102 in the present embodiment includes conductive plate 142, it is embedded in diaphragm area and the neighboring area of dielectric structure layer 102.Conductive plate 142 also can cause the lifting of capacitance.Conductive plate 142 does not need contact substrate 100; But because the operation of manufacture craft, conductive plate 142 may touch substrate 100, and the effect promoting capacitance also may change to some extent.Also referred herein to go out general in the structure, on substrate, 100 also can be called as backboard 142 around the conductive plate 142 of through hole 110.Backboard 142 is not only limited to conductive plate.

In order to understand the structure of MEMS more easily, depict the top view of this structure in accompanying drawing, as shown in Figure 9, Fig. 9 illustrates as MEMS device schematic diagram identical with the top view structure of Fig. 8 in foundation one embodiment of the invention.

Fig. 9 is the sectional view structure 1500 ' of MEMS device, and the top view structure 1502 ' including diaphragm area 150 in sectional view structure 1500 ' is also illustrated among Fig. 9.Conductive plate 142 also has the multiple openings corresponding to through hole 110 on substrate 100.In other words, generally speaking conductive plate 142 around the through hole 110 on substrate 100.

One has the MEMS embodiment of different structure as shown in Figure 10, and Figure 10 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.

In Fig. 10, based on the framework of Fig. 4 and Fig. 7, the embodiment that another has different dielectric structure sheaf structure both it, can be combined into.In addition, substrate 100 also can be revised.In this embodiment, substrate 100 be patterned as have one by sidewall 108 to limit to and through the substrate of opening of substrate.In this embodiment, the sunk area of Fig. 4 is extended through substrate 100.Then, conductive plate layer 152 is configured on the opening of substrate.Conductive plate layer 152 has multiple through hole.Conductive plate layer 152 and substrate 100 form the structure similar to the substrate 100 with through hole 110 in Fig. 4.

In addition, dielectric block 140 in this embodiment is also formed in the part dielectric 120a of dielectric structure layer 120.But, dielectric block 140 also can in dielectric structure layer 120 any suitable region.Dielectric block 140 contacts conductive plate layer 152, and conductive plate layer 152 is contacted with on substrate.Therefore reduced the clearance distance of the electric capacity of MEMS, and because the horizontal cover layer on dielectric block 140 than substrate 100 or conductive plate layer 152 closer to vibrating diaphragm 106, capacitance is promoted.

One has the MEMS embodiment of different structure as shown in figure 11, and Figure 11 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.

In fig. 11, as previously mentioned, dielectric block is additional selection.The present embodiment, based on the framework of Figure 10, eliminates dielectric block 140.In the part dielectric 120a of dielectric structure layer 120, capacitance can be increased by the lifting of dielectric coefficient.

One has the MEMS embodiment of different structure as shown in figure 12, and Figure 12 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.

In fig. 12, conductive plate as shown in figure 11 can be revised as supporting layer 153.Supporting layer 153 can be conductor or idioelectric rigid plate, in order to the effect provided support.Supporting layer 153 also has multiple through hole 110 ', and dielectric block is also embedded in dielectric structure layer.In this embodiment, dielectric block 140 ' is embedded in part dielectric 120 ', and it is made up of, in order to dielectric material is wherein coated two vertical walls and two horizontal wall.

Figure 13 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.Another has the embodiment of different MEMS structure as shown in figure 13.The present embodiment framework relatively in Figure 13 and the framework in Figure 12, the dielectric block 140 ' in previous embodiment can be revised as single conductive layer 140 ".

In other words, the embodiment proposed can the unrestricted embodiment proposed with other be combined with each other.

Semiconductor fabrication process will describe below in an example.In different MEMS structure, manufacture craft can be revised to some extent because of the difference of each embodiment.But, basic idea or the same.

Figure 14 A-Figure 14 H illustrates the sectional view into the manufacturing process according to one embodiment of the invention.In order to obtain the MEMS structure in Fig. 4, the order of manufacture craft is by Figure 14 A.Figure 14 A illustrates a substrate 200, and wherein substrate 200 can with silicon substrate as example.As a rule, the thickness of substrate is greater than the size of MEMS device.

Dielectric layer 202 (as silica) is formed at the top surface of substrate 200, and top surface is also referred to as first surface.Structure in foregoing embodiment, dielectric layer 202 also may have other internal structure, and this is have in this field usually to know that the knowledgeable can the fact of apparent.But the dielectric layer 202 in diagram uses simple layer for example.Mask layer 204 is formed on dielectric layer 202, after a while by the isotropic etching that carries out, mask layer 204 can be selected to be the hard dielectric material of low etch-rate.

Another dielectric layer 206 is formed on mask layer 204.The material of dielectric layer 206 can select to have high etch rates compared with mask layer 204, and etch-rate is more greater than the dielectric material of dielectric layer 202.In the isotropic etching manufacture craft of carrying out after a while, the impact that etch-rate causes can be found.

Then, MEMS vibrating diaphragm 208 is feasible is formed on dielectric layer 206.In order to form MEMS vibrating diaphragm 208, it needs the dielectric layer 210 had through suitable figureization manufacture craft usually.Have this field and usually know that the knowledgeable is understood this inner dielectric structure easily.MEMS vibrating diaphragm 208 also can be multi-form (as wavy vibrating diaphragm).In other words, MEMS vibrating diaphragm 208 generally represents with single plane layer.In addition, under being exposed to after isotropic etching manufacture craft by MEMS vibrating diaphragm 208 end product, etching mask layer 212 is embedded in dielectric layer 210.

In Figure 14 B, substrate 200 can be patterned as in diaphragm area the substrate that has recessed limit space.Using photoresist oxidant layer 216 as etching photomask, it is formed at the back side of substrate, or is called second surface.By lithographic fabrication process form the photoresist oxidant layer 216 with patterns of openings and correspond to predetermined diaphragm area.Then, carry out isotropic etching manufacture craft to form the second surface of substrate 200, remove etching substrates 200 with a degree of depth, and then form the dented space of being limited to by sidewall 214.The thickness of the sunk area of substrate 200 has obvious minimizing.

In Figure 14 C, another kind of etching mask layer 217 (as photoresist oxidant layer) can be formed on the second surface of substrate 200.Etching mask layer 217 has multiple patterns of openings, in order to expose the substrate 200 in recessed limit region.Carry out another kind of non-isotropy etching process to substrate, and the part that etching substrates exposes is until dielectric layer 202 exposes, the substrate 200 therefore in recessed limit region forms multiple through hole 218, and then etching mask layer 217 is that is removable.In Figure 14 D, go after photoresist manufacture craft 220 removes etching mask layer 217, expose the second surface of substrate 200, wherein through hole 218 still exposes dielectric layer 202.

In Figure 14 E, all carry out isotropic etching manufacture craft 222 on the both sides of substrate 200, the part exposed in order to etching dielectric material in different layers.The isotropic etching manufacture craft 222 of substrate 200 second surface is etching through the dielectric layer 202 of through hole 218, and dielectric layer 202 is etched by the part exposed in through hole 218.Now, the dielectric layer 210 at top is also etched and is exposed etching mask layer 212, because which form preliminary opening 224.Isotropic etching manufacture craft also etched the mask layer 204 of a part and exposes dielectric layer 206.

In Figure 14 F, the carrying out that isotropic etching manufacture craft 222 continues.At top, when part of dielectric layer still hides etching mask layer 212, by the part that lasting etching dielectric layer 210 exposes.In bottom, owing to there being the dielectric layer 206 of part to expose, it is faster that the dielectric layer 206 with high etch rates will etch.Therefore, multiple opening 224 can be formed completely in dielectric layer 202.The opening 224 of the sidewall and larger aperture with inclination exposes the through hole 218 on substrate 200.But because mask layer 204 has low etch-rate, therefore the remainder of mask layer 204 still can hide dielectric layer 202.Isotropic etching manufacture craft is etching dielectric layer 206 then, makes it expose a part for MEMS vibrating diaphragm 208, and this space is the preliminary formation of chamber 226.

In Figure 14 G, the carrying out that isotropic etching manufacture craft 222 continues.Under the impact of mask layer 204, the space that etching dielectric layer 206 produces defines chamber 226, and it is still deposited at mask layer 204 and exposes MEMS vibrating diaphragm 208 and part dielectric 220a in case.At top, dielectric layer 210 is etched and is exposed MEMS vibrating diaphragm 208.In this stage, MEMS device is formed.

In Figure 14 H, if for the mask layer 204 on remove portion dielectric 220a, isotropic etching manufacture craft further can last till that mask layer 204 part etches away completely.But this program is for selected by the predetermined structure.

In addition, in order to increase capacitance when not changing clearance distance d, another kind of manufacture craft is proposed as shown in Figure 15 A-Figure 15 F at this.Figure 15 A-Figure 15 F illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.

In Figure 15 A, use substrate 250 (as silicon substrate), and form dielectric layer 252 on substrate 250.Dielectric once 252 are formed the patterning hard mask layer 254 with multiple opening.Patterning hard mask layer can similarly be that the mode of Preliminary deposition hard mask layer is formed, and it can be conductor layer or dielectric layer.Then, hard mask layer forms the photoresist oxidant layer 253 with patterns of openings, and with photoresist oxidant layer 253 for etching mask layer etch hard mask layer is to obtain multiple opening 255.

In Figure 15 B, dielectric layer 256 deposition is covered in the surface of hard mask layer 254.Should be noted that the etch-rate of hard mask layer 254 is less than the etch-rate of dielectric layer 256 at this, the impact that etch-rate causes in isotropism manufacture craft can be found afterwards.Dielectric layer 256 is formed dielectric layer 260, and embed MEMS vibrating diaphragm 258 in dielectric layer 260.Mask layer 262 is also embedded in the dielectric layer 260 on MEMS vibrating diaphragm 258.

In figure 15 c, substrate 250 rear surface pattern is turned to the dented space having and limited to by sidewall 264.Substrate 250 in dented space also has through hole 266 to expose dielectric layer 252.The process for making of substrate pattern can be used the method as described in Figure 14 B-14D.

In Figure 15 D, all carry out isotropic etching manufacture craft on the both sides of substrate 250, the part exposed in order to etching dielectric material in different layers.The isotropic etching manufacture craft 222 of substrate 250 second surface is etching through the dielectric layer 252 of through hole 266, and dielectric layer 252 is etched by the part exposed in through hole 266.Now, the dielectric layer 260 at top is also etched and is exposed etching mask layer 262, then the etching mask layer 262 among dielectric layer 260, as etching photomask, makes a part for dielectric layer 260 be etched, does not wherein still also expose at the MEMS vibrating diaphragm at top.Isotropic etching manufacture craft continues etching dielectric layer 252 and exposes dielectric layer 256 with the opening 255 at hard mask layer 254.

In Figure 15 E, isotropic etching manufacture craft continues the dielectric material that etching dielectric layer 260, dielectric layer 252 and dielectric layer 256 expose.The dielectric layer 260 at etching top is to expose MEMS vibrating diaphragm 258.Dielectric layer 252 etches and forms multiple opening 268, in bottom and the opening 268 of the sidewall and larger aperture with inclination exposes the through hole 266 on substrate 250.By opening 255, etch the dielectric layer 256 with high etch speed, once opening 255 exposes dielectric layer 256, the ratio dielectric layer 252 that dielectric layer 256 will etch is fast, and the MEMS vibrating diaphragm of part is exposed.

In Figure 15 F, identical isotropic etching manufacture craft still continues, and further etched dielectric layer 256 and is able to sufficient exposure to make MEMS vibrating diaphragm, because which form hard mask layer 254 and MEMS vibrating diaphragm 258 chamber 270 therebetween.This can be seen that in isotropism manufacture craft, when setting suitable etch-rate, chamber 270 and the opening 268 of dielectric layer 254 of dielectric layer 256 all have the sidewall of inclination.The part dielectric 252a of dielectric layer 252 in resonating membrane region is still positioned under hard mask layer 254.

In this MEMS manufacture method proposing another embodiment as Figure 16 A-Figure 16 E.Figure 16 A-Figure 16 E illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.

The substrate 300 used in Figure 16 A can silicon substrate as example.As a rule, the thickness of substrate is greater than the size of MEMS device.Dielectric layer 302 (as silica) is formed on the top surface of substrate 300, also can be described as first surface.As with the previous embodiment, dielectric layer 302 may have other internal structures, and this is have in this field usually to know that the knowledgeable can the fact of apparent.But, only represent with individual layer at this dielectric layer 302.

Dielectric layer 302 is formed another dielectric layer 304.Dielectric layer 304 selects the material having high etch speed compared with dielectric layer 302.In the isotropic etching manufacture craft of carrying out after a while, the impact that etch-rate causes can be found.

Then, on dielectric layer 304, MEMS vibrating diaphragm 310 is formed.In order to form MEMS vibrating diaphragm 310, it needs the dielectric layer 306 had through suitable patterning manufacture craft usually.Dielectric layer 306 is a dielectric structure layer being embedded with MEMS vibrating diaphragm 310 and etching mask layer 308.This inner dielectric structure is to have in this field usually to know that the knowledgeable can apparent, and MEMS vibrating diaphragm 310 can have other different structures, as well known Wave-shaped structural.But MEMS vibrating diaphragm 310 is general is representative with Flat single layer.In addition, in order to the end product in the manufacture craft of isotropic etching exposes MEMS vibrating diaphragm 310, therefore in dielectric layer 306, etching mask layer 308 is embedded.

In fig. 16b, the second surface patternable of substrate 300 for having the dented space of being limited to by sidewall 312, and substrate 310 in dented space also patternable be the substrate with multiple through hole 314, to expose dielectric layer 302.The process for making of substrate 300 patterning can be used the method as described in Figure 14 B-14D.

In Figure 16 C, all carry out isotropic etching manufacture craft, in order to etching dielectric material on the both sides (or claiming the first surface of substrate 300 and second surface) of substrate 300.Isotropic etching manufacture craft 316 is etching through the dielectric layer 302 of through hole 314 at the second surface of substrate 300, and dielectric layer 302 is etched by the part exposed in through hole 314, because which form preliminary opening 318.Now, the dielectric material of the dielectric layer 306 at top is also etched and is exposed etching mask layer 308, etching mask layer 308 in dielectric layer 306 namely in order to as etching photomask, make part dielectric layer 306 etched, wherein the MEMS vibrating diaphragm 310 at top exposes not yet.Isotropic etching manufacture craft 316 continues etching dielectric layer 302 to expose dielectric layer 304.

In Figure 16 D, isotropic etching manufacture craft 316 is still being carried out, and the dielectric layer 304 therefore through opening 318 starts to be etched.Because the etch-rate of dielectric layer 304 is greater than the etch-rate of dielectric layer 302, once dielectric layer 302 exposes dielectric layer 304, it is quite quick that dielectric layer 304 can etch, and then in dielectric layer 304, form preliminary chamber 320 and expose MEMS vibrating diaphragm 310 partly.At top, by etching mask layer 308 as photomask with etching dielectric layer 306.In this stage, the MEMS vibrating diaphragm 310 at top exposes not yet.

In Figure 16 E, isotropic etching manufacture craft 316 continues to carry out, and therefore dielectric layer 306 is further etched with and exposes MEMS vibrating diaphragm 310.The ratio dielectric layer 302 etched due to dielectric layer 304 is fast, makes part dielectric 302a still under MEMS vibrating diaphragm 310.

This can be seen that and only have a kind of isotropic etching manufacture craft can form micro-long-pending electric system structure.Because different dielectric layer is provided with suitable etch-rate relation.Can forming section dielectric 302a after enough etching periods.

The manufacture craft of another embodiment is as shown in Figure 17 A-Figure 17 F.Figure 17 A-Figure 17 F illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.

The substrate 350 used in Figure 17 A can silicon substrate as example.As a rule, the thickness of substrate 350 is greater than the size of MEMS device.Dielectric layer 354 (as silica) is formed on the top surface of substrate 350, also can be described as first surface.As with the previous embodiment, dielectric layer 354 may have other internal structures, and this is have in this field usually to know that the knowledgeable can the fact of apparent.But, only represent with individual layer at this dielectric layer 302.Conductive plate 356 is embedded in dielectric layer 354, and conductive plate 356 has patterns of openings, and it exposes the through hole that can be formed at after a while on substrate 350.Conductive plate 356 is identical with the conductive plate 142 in Fig. 9.Dielectric layer 354 is formed mask layer 358, mask layer 354 is formed the dielectric layer 360 having etch-rate and be greater than mask layer 354, and form dielectric layer 362, MEMS vibrating diaphragm 366 at dielectric layer 360 and be all embedded in dielectric layer 362 with etching mask layer 364, as discussed previously.

In Figure 17 B, the rear surface pattern of substrate 350 turns to the substrate 350 in diaphragm area with the recessed limit space of being limited to by sidewall 368.Substrate 350 in dented space also has through hole 370 to expose dielectric layer 354.The process for making of substrate pattern can be used the method as described in Figure 14 B-14D.

In Figure 17 C, all carry out isotropic etching manufacture craft, in order to etching dielectric material on the both sides (or claiming the first surface of substrate 350 and second surface) of substrate 350.The isotropic etching manufacture craft of substrate 350 second surface is etching through the dielectric layer 354 of through hole 370, and dielectric layer 354 is etched by the part exposed in through hole 370, because which form preliminary opening 372.Mask layer 358 then etches multiple opening 374 to expose dielectric layer 360.Now, the dielectric material of the dielectric layer 362 at top is also etched and is exposed etching mask layer 364, etching mask layer 364 in dielectric layer 362 namely in order to as etching photomask, make part dielectric layer 306 etched, wherein the MEMS vibrating diaphragm 366 at top exposes not yet.Isotropic etching manufacture craft continues etching dielectric layer 354 until mask layer 358 is to expose dielectric layer 360.

In Figure 17 D, isotropic etching manufacture craft is still being carried out, and the dielectric layer 360 therefore through opening 374 starts to be etched.Because the etch-rate of dielectric layer 360 is greater than the etch-rate of dielectric layer 354, once the opening 374 of mask layer 358 exposes dielectric layer 360, it is quite quick that dielectric layer 360 can etch, and then in dielectric layer 360, form preliminary chamber 376 and expose MEMS vibrating diaphragm 366 partly.At top, by etching mask layer 364 as photomask with etching dielectric layer 362.In this stage, the MEMS vibrating diaphragm 366 at top may expose or expose not yet.In this example, the top of MEMS vibrating diaphragm 366 is exposed completely.

In Figure 17 E, isotropism manufacture craft continues to carry out, and therefore dielectric layer 360 is further etched with and exposes MEMS vibrating diaphragm 366.The ratio dielectric layer 354 that dielectric layer 360 etches is fast, and in the diaphragm area making MEMS vibrating diaphragm 366, part dielectric 354a is still under mask layer 358, because which form chamber 376.

In Figure 17 F, if mask layer 358 does not need, isotropic etching manufacture craft can carry out the longer time, and the mask layer 358 on part dielectric 354a is removed.

The manufacture craft of another embodiment is as shown in Figure 18 A-Figure 18 E.Figure 18 A-Figure 18 E illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.

The substrate 400 used in Figure 18 A, and form dielectric layer structure 402 over substrate 400, dielectric layer 402 has dielectric block 406 and conductive plate 404 and is embedded in internal structure wherein.Each dielectric block 406 has the multiple vertical wall being contacted with conductive plate 404 and the horizontal cover layer be positioned on vertical wall.Dielectric material by vertical wall, horizontal cover layer and conductive plate 404 institute around.Conductive plate 404 has multiple through hole 404a.Dielectric layer 402 is formed mask layer 408, mask layer 408 is formed dielectric layer 410, the etch-rate of mask layer 408 is less than the etch-rate of dielectric layer 410 and dielectric layer 402, and dielectric layer 412 is formed on dielectric layer 410, MEMS vibrating diaphragm 416 is embedded on dielectric layer 412, and has etching mask layer 414 on MEMS vibrating diaphragm.

In Figure 18 B, substrate 400 is patterned as the pattern with sidewall 418 and an opening.Opening limited to by sidewall 418, and exposes dielectric layer 402.

In Figure 18 C, all carry out isotropic etching manufacture craft 420 on the both sides (or claiming the first surface of substrate 400 and second surface) of substrate 400.Isotropic etching manufacture craft 420 on the second surface of substrate 400 etching dielectric layer 402 to expose conductive plate 404 and through hole 402a, then by the through hole 402a further etching dielectric layer 402 on conductive plate 404, and when not exposing dielectric block 406, dielectric layer 402 is formed multiple opening 422, and also etch multiple opening on mask layer 408.The dielectric layer 412 at top is also etched with exposes etching mask layer 414.

In Figure 18 D, isotropic etching manufacture craft 420 continues to etch the dielectric material exposed.Therefore, mask layer 408 is etched larger opening, also makes dielectric layer 410 be etched.Because the etch-rate of dielectric layer 410 is greater than the etch-rate of dielectric layer 402 and mask layer 408, thus dielectric layer 410 compared to dielectric layer 402 and mask layer 408 can etch quite quick, therefore preliminary chamber 424 is also formed in dielectric layer 410.At top, when etching mask layer is as etching photomask, dielectric layer 412 can further be etched.In this stage, MEMS vibrating diaphragm 416 may also not expose.

In Figure 18 E, isotropic etching manufacture craft 420 continues to etch the dielectric material exposed, and makes to form chamber 424 in dielectric layer 410.The part dielectric 402a of the dielectric layer 402 under mask layer 408 still exists.

Also can find out that conductive plate 404 directly can be formed on substrate 400 by other kind of patterning manufacture craft from here.

Figure 19 A-Figure 19 E illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.

The substrate 450 used in Figure 19 A, and form dielectric layer structure 452 on substrate 450, dielectric layer 452 has rigid support layer 454 and dielectric block 450 and is embedded in internal structure wherein.Each dielectric block 450 has multiple vertical wall and is positioned at two horizontal cover layers on vertical wall.Dielectric block in embodiment can not contact with supporting layer 454.Dielectric material by vertical wall and two horizontal cover layers institutes around.Supporting layer 454 has multiple through hole 454a.Dielectric layer 452 is formed mask layer 456, dielectric layer 458 is formed again on mask layer 456, the etch-rate of mask layer 456 is less than the etch-rate of dielectric layer 458 dielectric layer 452, and dielectric layer 460 is formed on dielectric layer 458, MEMS vibrating diaphragm 464 is embedded in dielectric layer 460 on dielectric layer 458, and etching mask layer 462 is positioned on MEMS vibrating diaphragm 464.

In fig. 19b, substrate 450 is patterned as the pattern with sidewall 466 and an opening.Opening limited to by sidewall 466, and exposes dielectric layer 452.

In Figure 19 C, all carry out isotropic etching manufacture craft 420 on the both sides (or claiming the first surface of substrate 450 and second surface) of substrate 450.Isotropic etching manufacture craft 468 on the second surface of substrate 450 etching dielectric layer 452 to expose supporting layer 454 and through hole 452a, then by the through hole 452a further etching dielectric layer 452 on supporting layer 454, and when not exposing dielectric block 450, dielectric layer 452 is formed multiple opening 470, and on mask layer 452, also etches multiple opening 472.The dielectric layer 460 at top is also etched with exposes etching mask layer 462.

In Figure 19 D, isotropic etching manufacture craft 468 continues the dielectric material exposed in etching MEMS device.Therefore, mask layer 456 is etched larger opening 472, also makes dielectric layer 458 be etched.Because the etch-rate of dielectric layer 458 is greater than the etch-rate of dielectric layer 452 and mask layer 456, thus dielectric layer 458 be compared to that dielectric layer 452 and mask layer 456 can etch quite quick, therefore preliminary chamber 474 is also formed in dielectric layer 458.At top, when etching mask layer 462 is as etching photomask, dielectric layer 460 can further be etched.In this stage, MEMS vibrating diaphragm 416 may also not expose.

In Figure 19 E, isotropic etching manufacture craft 468 continues to etch the dielectric material exposed, and makes to form chamber 474 in dielectric layer 458, and allows MEMS vibrating diaphragm 464 come out fully.The part dielectric 452a of the dielectric layer 452 under mask layer 456 still exists.Dielectric block 450 is embedded in part dielectric 452a.Supporting layer 454 in embodiment provides the support of mechanics.The material of supporting layer 454 can be conductor or non-conductor.

Also can find out that supporting layer 454 directly can be formed on substrate 450 by other kind of patterning manufacture craft from here.

Moreover Figure 20 A-Figure 20 H illustrates the sectional view into the manufacture MEMS device flow process according to another embodiment of the present invention.This manufacture craft can form structure as shown in Figure 5 D.

In Figure 20 A, use the substrate 500 as silicon substrate, and form dielectric layer 502 on substrate 500, then on dielectric layer 502, form one deck mask layer 504.In Figure 20 B, mask layer 504 and dielectric layer 502 all with lithographic fabrication process and etching process patterning, in order to form opening 506 and make dielectric layer 502 be exposed by substrate 500 on mask layer 504.Lithographic fabrication process comprises: form one deck photoresist oxidant layer, and this photoresist oxidant layer of growing up is using as etching photomask.Then carry out non-isotropy etching process, etching mask layer 504 and dielectric layer 502 also form opening 506.

In Figure 20 C, substrate 500 and dielectric layer 502 form another mask layer, the sidewall of its split shed 506 also masked layer 508 covered.In Figure 20 D, carry out non-isotropy etching process, it also exposes substrate 500 again as rear end manufacture craft etching mask layer 508.The remaining part of mask layer 508 is then as the clearance wall of opening 506 sidewall.Mask layer 508 and mask layer 504 as clearance wall are combined into a single mask layer and cover dielectric layer 502.

In Figure 20 E, substrate 500 is formed one dielectric layer 510 and mask layer 504 and 508, make the opening 506 in dielectric layer 502 also fill up by dielectric layer 510.In addition, vibrating diaphragm 512 is embedded among dielectric layer 510.Another etching mask 514 is embedded among dielectric layer 510, if observed from the direction of top view, can see that etching mask 514 is round vibrating diaphragm 512.

In Figure 20 F, manufacture craft as the aforementioned, substrate 500 optionally can turn to the substrate with dented space from bottom pattern.The dented space that sidewall 516 limits to is corresponding with diaphragm area.Substrate 500 is also patterned as the substrate with through hole 518, and in order to expose dielectric layer 502 in clearance wall 508 region therebetween.In the present embodiment, with lithographic fabrication process and non-isotropy etching process patterned substrate 500.

In Figure 20 G, the dielectric material on substrate 500 two sides carries out isotropic etching manufacture craft, such as Wet-type etching manufacture craft, to etch the dielectric material in MEMS device.At initial period, the dielectric layer 510 of part is etched and is exposed etching mask layer 514.In etching process, using etching mask layer 514 as the photomask on dielectric layer 502.From the bottom of substrate 500, opening 516 is filled up and the part of dielectric layer 510 that exposes can first etched, now because the masked layer 504 of dielectric layer 502 and clearance wall 508 covered, so can not be etched.Therefore at initial period, the preliminary opening 522 corresponding to opening 516 in dielectric layer 510, is defined.Opening 516 in original dielectric layer 502 occurs once more.

Isotropic etching manufacture craft continues to carry out, and preliminary opening 522 expands to chamber 524, and exposes and disengage battle array and move film 512 to sense air pressure.Still supported by dielectric layer 510 around the border of vibrating diaphragm 512.The opening that chamber 524 is limited to by clearance wall 508 and through hole 518 are connected in environment.

In the present embodiment, opening is formed on dielectric layer 502 by non-isotropy etching process.The sidewall of opening 506 is not skewed.Mask layer covers the surface that dielectric layer 502 exposes, and the isotropic etching in next step only can be etched the dielectric material of dielectric layer 510.Different manufacture crafts also can cause opening 506 to have different structural allocation.But the effect increasing MEMS device capacitance still exists.

The present invention proposes a kind of MEMS device, and its capacitance can increase when not changing clearance distance d.And the increase of capacitance is reached by the average dielectric coefficient of raising MEMS electric capacity.In addition, effective clearance distance can be shortened by part dielectric, the surface current on sidewall be leaked and is also minimized.

Several different manufacture crafts are proposed to obtain said structure, wherein because need to give suitable etch-rate to different dielectric layers, so it is identical to only have isotropic etching manufacture craft to be necessary in each embodiment in embodiment.

Again with regard to the structure of MEMS vibrating diaphragm 106, the structure that above embodiment illustrates be only with a Rotating fields for schematic presentation.Just actual vibrating diaphragm 106 structure, it can have other any suitable structure.Generally when manufacturing vibrating diaphragm 106, due to different materials and different manufacture craft temperature, it such as can tensioned uneven problem on vibrating diaphragm 106.Therefore, vibrating diaphragm 106 also such as can adopt the vibrating diaphragm of tool corrugated structure (corrugatedstructure) again.

Figure 21 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.Consult Figure 21, its structure is identical with the structure of Fig. 4, but the structure of vibrating diaphragm 106 can have different changes, such as, be corrugated structure.The vibrating diaphragm 106 of corrugated structure is such as be made up of conductive layer 106a, 106c and dielectric layer 106b, and its dielectric layer 106b is folded in conductive layer 106a, 106c therebetween.The method how producing the vibrating diaphragm 106 of corrugated structure generally knows operator known, and will not describe in detail.The vibrating diaphragm 106 of this case can adopt any compatible various structures, is not limited to lifted embodiment.

Figure 22 illustrates the cross-section structure into the MEMS device structure according to one embodiment of the invention.Consult Figure 22, with regard to its change of dielectric structure layer 700, as the structure of Figure 20 H, also can adopt the dielectric material of identical material, and save the formation of mask layer.By semiconductor fabrication process, the through hole 110 of dielectric structure layer 700 counterpart substrate 100 also has opening 704.Around through hole 110 be part of dielectric layer 702 institute around.The structure of vibrating diaphragm 106 is such as corrugated structure.Chamber 708 is formed between vibrating diaphragm 106 and substrate 100.

Although disclose the present invention in conjunction with above embodiment; but itself and be not used to limit the present invention; this operator is familiar with in any art; without departing from the spirit and scope of the present invention; a little change and retouching can be done, therefore being as the criterion of should defining with the claim of enclosing of protection scope of the present invention.

Claims

1. a MEMS devices, comprising:

Substrate, has vibrating diaphragm opening in diaphragm area;

Supporting layer is the conductor not having dielectric material, and arrange and cover this vibrating diaphragm opening on the substrate, wherein the first limit of this supporting layer is exposed by this vibrating diaphragm opening, and this supporting layer has multiple through hole in this diaphragm area, and so those through holes are connected with this vibrating diaphragm opening;

First dielectric structure layer, is configured at the Second Edge of this supporting layer, and wherein this first dielectric structure layer has the multiple openings corresponding to those through holes, and wherein this first dielectric structure layer exposes this each through hole;

Second dielectric structure layer, have chamber and be configured on this first dielectric structure layer, wherein this chamber exposes those openings of this first dielectric structure layer and those through holes of this substrate; And

MEMS vibrating diaphragm, being positioned on this chamber and being embedded in this second dielectric structure layer, wherein this supporting layer and this MEMS vibrating diaphragm form a air gap therebetween.

2. MEMS devices as claimed in claim 1, wherein this each opening of this first dielectric structure layer has the sidewall of an inclination, make this each opening have one near the first aperture of this substrate and near the second aperture of this second dielectric structure layer, and this first aperture is greater than this second aperture.

3. MEMS devices as claimed in claim 1, wherein the chamber of this second dielectric structure layer exposes MEMS vibrating diaphragm.

4. MEMS devices as claimed in claim 1, wherein this first dielectric structure layer is a dielectric layer entirely.

5. MEMS devices as claimed in claim 1, wherein this first dielectric structure layer also comprises a conductive structure, is configured in this first dielectric structure layer, and around each through hole on this supporting layer.

6. MEMS devices as claimed in claim 5, wherein this conductive structure comprises the vertical wall that at least two are contacted with this supporting layer, and is at least positioned at a horizontal cover layer on this vertical wall top.

7. MEMS devices as claimed in claim 5, wherein this conductive structure is a column ring, and is embedded in this first dielectric structure layer when not contacting this supporting layer.

8. MEMS devices as claimed in claim 5, wherein this conductive structure comprises at least two vertical walls, is positioned at first level course on this at least two vertical walls top, and is positioned at the second level course of this at least two vertical walls bottom.

9. MEMS devices as claimed in claim 1, also comprise an etching mask layer, be positioned at the surface of this first dielectric structure layer, wherein the etch-rate of this etching mask layer is lower than the etch-rate of the dielectric part of this first dielectric structure layer and this second dielectric structure layer.

10. MEMS devices as claimed in claim 9, wherein this etching mask layer is completely coated and around this each opening of this first dielectric structure layer.

11. MEMS devices as claimed in claim 9, wherein this etching mask layer is only configured in the neighboring area of this vibrating diaphragm, not around this each opening of this first dielectric structure layer.

12. MEMS devices as claimed in claim 9, wherein a part for this etching mask layer is still on this first dielectric structure layer, and around this each opening of this first dielectric structure layer.

13. MEMS devices as claimed in claim 9, wherein this first dielectric structure layer also comprises a conductive structure, to be positioned among this dielectric structure layer and around the through hole on this supporting layer.

14. MEMS devices as claimed in claim 13, wherein this conductive structure comprises at least two and is contacted with the vertical wall of this supporting layer and at least one horizontal cover layer being positioned at this vertical wall top.

15. MEMS devices as claimed in claim 13, wherein this conductive structure is a column annulus, and is embedded in when not contacting this supporting layer among this first dielectric structure layer.

16. MEMS devices as claimed in claim 13, wherein this conductive structure comprises at least two vertical walls, first level course being positioned at those vertical wall tops, and the second level course that is positioned at those vertical wall bottoms.

17. MEMS devices as claimed in claim 1, wherein this first dielectric structure layer is configured on this substrate, and directly contacts with this supporting layer.

18. MEMS devices as claimed in claim 1, wherein this MEMS vibrating diaphragm comprises the vibrating diaphragm containing corrugated structure.

19. 1 kinds of MEMS devices, comprising:

Substrate, has a vibrating diaphragm opening in a diaphragm area;

Supporting layer is non-conductor, is configured on this substrate, in order to cover this vibrating diaphragm opening, first limit of this supporting layer is exposed by this vibrating diaphragm opening, and this supporting layer wherein in this diaphragm area has multiple through hole, makes the through hole of this supporting layer be connected to this vibrating diaphragm opening;

First dielectric structure layer, is configured at the Second Edge of this supporting layer, and wherein this first dielectric structure layer has the multiple openings corresponding to those through holes, and wherein this first dielectric structure layer still exposes this each through hole;

Second dielectric structure layer, have a chamber and be configured on this first dielectric structure layer, wherein this chamber exposes those openings of this first dielectric structure layer; And

20. MEMS devices as claimed in claim 19, wherein this each opening of this first dielectric structure layer has the sidewall of an inclination, make this each opening have one first aperture near this substrate and one second aperture near this second dielectric structure layer, and this first aperture is greater than this second aperture.

21. MEMS devices as claimed in claim 19, wherein this chamber of this second dielectric structure layer exposes this MEMS vibrating diaphragm.

22. MEMS devices as claimed in claim 19, wherein this first dielectric structure layer is a dielectric layer entirely.

23. MEMS devices as claimed in claim 19, wherein this first dielectric structure layer also comprises a conductive structure, is configured in this first dielectric structure layer, and around each through hole on this substrate.

24. MEMS devices as claimed in claim 23, wherein this conductive structure comprises two vertical walls be contacted with on this supporting layer, and is positioned at a horizontal cover layer on this vertical wall top.

25. MEMS devices as claimed in claim 23, wherein this conductive structure is a column ring, and is embedded in this first dielectric structure layer when not contacting this supporting layer.

26. MEMS devices as claimed in claim 23, wherein this conductive structure comprises two vertical walls, is positioned at first level course on these two vertical wall tops, and is positioned at the second level course of these two vertical wall bottoms.

27. MEMS devices as claimed in claim 19, also comprise an etching mask layer, be positioned at the surface of this first dielectric structure layer, wherein the etch-rate of this etching mask layer is lower than the etch-rate of the dielectric part of this first dielectric structure layer and this second dielectric structure layer.

28. MEMS devices as claimed in claim 27, wherein this etching mask layer is completely coated and around this each opening of this first dielectric structure layer.

29. MEMS devices as claimed in claim 27, wherein this etching mask layer is only configured in the neighboring area of this vibrating diaphragm, not around this each opening of this first dielectric structure layer.

30. MEMS devices as claimed in claim 29, wherein a part for this etching mask layer is still on this first dielectric structure layer, and around this each opening of this first dielectric structure layer.

31. MEMS devices as claimed in claim 19, wherein this supporting layer is a rigid layer, and has enough low etch-rate, to resist dielectric etching in this MEMS devices.

32. MEMS devices as claimed in claim 19, wherein this MEMS vibrating diaphragm comprises the vibrating diaphragm containing corrugated structure.