TWI763129B - Pumping device, pumping method, and multi-chamber plasma processor - Google Patents
Pumping device, pumping method, and multi-chamber plasma processor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Abstract
本發明實施例提供了一種抽氣裝置、抽氣方法以及多腔電漿處理器,抽氣裝置包括:真空泵、擺閥、混合腔以及混合腔中的分隔部件。其中,分隔部件將混合腔分為複數個子腔體,各子腔體分別連接一個待處理腔體,擺閥連接混合腔和真空泵,擺閥包括閥板和擺閥主體,分隔部件與擺閥連接,在擺閥具有擺閥開口時,分隔部件將擺閥開口分為複數個子開口,各子開口分別正對一個子腔體,擺閥開口由閥板相對於擺閥主體的旋轉形成,分隔部件的形狀根據閥板的旋轉路徑確定。本發明之抽氣裝置根據閥板的旋轉路徑確定分隔部件的形狀,從而確定擺閥開口中與子腔體正對的子開口的面積,進而利用真空泵為與子腔體連接的待處理腔體提供低氣壓,提高腔體環境的穩定性。Embodiments of the present invention provide an air extraction device, an air extraction method and a multi-chamber plasma processor. The air extraction device includes a vacuum pump, a pendulum valve, a mixing chamber, and a separation component in the mixing chamber. The separating part divides the mixing chamber into a plurality of sub-chambers, each sub-chamber is connected to a cavity to be treated, the swing valve is connected to the mixing chamber and the vacuum pump, the swing valve includes a valve plate and a swing valve body, and the separating part is connected to the swing valve. , when the pendulum valve has a pendulum valve opening, the partition member divides the pendulum valve opening into a plurality of sub-openings, each of which faces a sub-chamber, and the pendulum valve opening is formed by the rotation of the valve plate relative to the pendulum valve body, and the partition member The shape is determined according to the rotation path of the valve plate. The air extraction device of the present invention determines the shape of the partition member according to the rotation path of the valve plate, so as to determine the area of the sub-opening facing the sub-chamber in the opening of the pendulum valve, and then utilizes a vacuum pump as the cavity to be processed connected to the sub-chamber. Provide low air pressure to improve the stability of the cavity environment.
Description
本發明涉及半導體器件製造領域,尤其涉及一種抽氣裝置、抽氣方法以及多腔電漿處理器。The invention relates to the field of semiconductor device manufacturing, in particular to a gas pumping device, a gas pumping method and a multi-cavity plasma processor.
在半導體器件的製備過程中,可以在真空環境下對器件進行處理,例如半導體器件中薄膜的形成、對薄膜的電漿蝕刻等,因此對半導體器件進行處理時,半導體器件可以置於腔體中,腔體通常會連接抽氣裝置而實現真空,從而為半導體器件提供真空環境。During the preparation of semiconductor devices, the devices can be processed in a vacuum environment, such as the formation of thin films in semiconductor devices, plasma etching of thin films, etc. Therefore, when processing semiconductor devices, the semiconductor devices can be placed in a cavity , the cavity is usually connected to an air extraction device to achieve a vacuum, so as to provide a vacuum environment for the semiconductor device.
目前,可以為複數個腔體配置一套抽氣裝置,從而同時為複數個腔體提供真空環境。具體來說,複數個腔體可以分別與中空的混合腔連接,混合腔連接擺閥,擺閥與真空泵連接,在擺閥具有一定開度時,真空泵可以為混合腔提供低氣壓,複數個腔體中的空氣、反應廢氣、帶電粒子等流向低壓的混合腔,這樣,複數個腔體中的氣壓隨之降低。At present, a set of air extraction devices can be configured for a plurality of cavities, so as to provide a vacuum environment for the plurality of cavities at the same time. Specifically, a plurality of cavities can be respectively connected with a hollow mixing chamber, the mixing chamber is connected with a swing valve, and the swing valve is connected with a vacuum pump. When the swing valve has a certain opening, the vacuum pump can provide low air pressure for the mixing chamber, and the plurality of chambers The air, reaction waste gas, charged particles, etc. in the body flow to the low-pressure mixing chamber, so that the air pressure in the plurality of chambers decreases accordingly.
然而,這種降低複數個腔體的氣壓的方法中,複數個腔體中的氣體流向低壓的混合區域,可能會由於熱運動而產生互竄,導致腔體內的氣體氛圍以及氣壓狀態受其他腔體的影響,這樣不利於腔體環境的穩定,且可能影響該腔體內進行的半導體器件處理品質。However, in this method of reducing the air pressure of a plurality of cavities, the gases in the plurality of cavities flow to the low-pressure mixing area, which may cause mutual channeling due to thermal motion, resulting in the gas atmosphere and the air pressure state in the cavities being affected by other cavities. This is not conducive to the stability of the cavity environment, and may affect the processing quality of the semiconductor device in the cavity.
有鑑於此,本發明實施例提供了一種抽氣方法及裝置,能夠提供穩定的腔體環境,提高腔體內進行的半導體器件的處理品質。In view of this, embodiments of the present invention provide a gas pumping method and apparatus, which can provide a stable cavity environment and improve the processing quality of semiconductor devices in the cavity.
一種抽氣裝置,包括:真空泵、擺閥、混合腔以及混合腔中的分隔部件;分隔部件將混合腔分為複數個子腔體,複數個子腔體用於分別連接複數個待處理腔體;擺閥連接混合腔和真空泵;擺閥包括閥板和擺閥主體;分隔部件與擺閥連接,在擺閥具有擺閥開口時,分隔部件將擺閥開口分為複數個子開口,複數個子開口分別正對複數個子腔體;擺閥開口由閥板相對於擺閥主體的旋轉形成,分隔部件的形狀根據閥板的旋轉路徑確定。An air pumping device, comprising: a vacuum pump, a pendulum valve, a mixing chamber and a separation part in the mixing chamber; the separation part divides the mixing chamber into a plurality of sub-cavities, and the plurality of sub-cavities are used to respectively connect a plurality of to-be-processed chambers; a pendulum The valve connects the mixing chamber and the vacuum pump; the swing valve includes a valve plate and a swing valve body; the separating part is connected to the swing valve, and when the swing valve has a swing valve opening, the separating part divides the swing valve opening into a plurality of sub-openings, and the plurality of sub-openings are respectively positive and negative. For a plurality of sub-cavities; the opening of the swing valve is formed by the rotation of the valve plate relative to the main body of the swing valve, and the shape of the partition part is determined according to the rotation path of the valve plate.
較佳地,對應於擺閥開口的複數個面積與複數個子開口之間的面積差異小於或等於預設值。Preferably, the area difference between the plurality of areas corresponding to the opening of the pendulum valve and the plurality of sub-openings is less than or equal to a preset value.
較佳地,預設值小於或等於10%。Preferably, the preset value is less than or equal to 10%.
較佳地,複數個子腔體、複數個子開口和複數個待處理腔體的數量為2,分隔部件為擋板。Preferably, the number of the plurality of sub-cavities, the plurality of sub-openings and the plurality of cavities to be processed is 2, and the partition member is a baffle.
較佳地,擋板在垂直擺閥開口所在的平面內呈現為直線、曲線或折線。Preferably, the baffle is a straight line, a curved line or a broken line in the plane where the vertical swing valve opening is located.
較佳地,分隔部件在與擺閥連接的平面內的形狀根據閥板的旋轉路徑確定。Preferably, the shape of the partition member in the plane connected to the pendulum valve is determined according to the rotation path of the valve plate.
較佳地,分隔部件在與擺閥連接的平面內呈現為曲線,曲線為以閥板的旋轉中心為圓心,並以旋轉中心與擺閥中心的距離為半徑的圓弧。Preferably, the partition member presents a curve in the plane connected to the swing valve, and the curve is an arc with the center of rotation of the valve plate as the center and the distance between the center of rotation and the center of the swing valve as the radius.
較佳地,分隔部件在與擺閥連接的平面內呈現為折線,形成折線的各個線段與閥板的旋轉中心的距離一致,折線經過擺閥中心。Preferably, the partition member presents a folded line in the plane connected to the swing valve, the distances of each line segment forming the folded line and the rotation center of the valve plate are consistent, and the broken line passes through the center of the swing valve.
較佳地,分隔部件在與擺閥連接的平面內呈現為直線,直線經過擺閥中心且與擺閥中心與閥板的旋轉中心的連線垂直。Preferably, the separating member is a straight line in the plane connected to the swing valve, the straight line passes through the center of the swing valve and is perpendicular to the line connecting the center of the swing valve and the center of rotation of the valve plate.
較佳地,擺閥開口的面積基於待處理腔體的氣壓需求來確定。Preferably, the area of the opening of the pendulum valve is determined based on the air pressure requirement of the cavity to be treated.
一種抽氣方法,其利用如上述的抽氣裝置,抽氣方法包括:基於待處理腔體的氣壓需求確定擺閥開口的面積,以便利用真空泵降低待處理腔體的氣壓。An air extraction method using the above air extraction device includes: determining the area of the opening of the pendulum valve based on the air pressure requirement of the cavity to be processed, so as to use a vacuum pump to reduce the air pressure of the cavity to be processed.
本發明實施例進一步提供了一種多腔電漿處理器,包括相鄰排列的複數個電漿處理腔體,以及上述的抽氣裝置。Embodiments of the present invention further provide a multi-chamber plasma processor, including a plurality of plasma processing chambers arranged adjacently, and the above-mentioned air pumping device.
與先前技術相比,本發明至少具有以下優點:Compared with the prior art, the present invention has at least the following advantages:
本發明實施例提供了一種抽氣裝置、抽氣方法以及多腔電漿處理器,其中抽氣裝置包括:真空泵、擺閥、混合腔以及混合腔中的分隔部件。分隔部件將混合腔分為複數個子腔體,各子腔體分別連接一個待處理腔體。擺閥連接混合腔和真空泵,且擺閥包括閥板和擺閥主體。分隔部件與擺閥連接,在擺閥具有擺閥開口時,分隔部件將擺閥開口分為複數個子開口,且各子開口分別正對一個子腔體。擺閥開口由閥板相對於擺閥主體的旋轉形成,且分隔部件的形狀根據閥板的旋轉路徑確定。本發明之抽氣裝置透過調節閥板相對於擺閥主體的旋轉調節擺閥開口的面積,並根據閥板的旋轉路徑確定分隔部件的形狀,從而確定擺閥開口中與子腔體正對的子開口的面積,進而利用真空泵為與子腔體連接的待處理腔體提供低氣壓。同時,由於閥板將混合腔分隔開,可以避免不同的待處理腔體內的氣體發生互竄的問題,提高腔體環境的穩定性以及在待處理腔體內進行的半導體器件的處理品質。Embodiments of the present invention provide an air extraction device, an air extraction method, and a multi-chamber plasma processor, wherein the air extraction device includes a vacuum pump, a pendulum valve, a mixing chamber, and a separation component in the mixing chamber. The separating component divides the mixing chamber into a plurality of sub-chambers, and each sub-chamber is respectively connected to a to-be-processed chamber. The swing valve is connected with the mixing chamber and the vacuum pump, and the swing valve includes a valve plate and a swing valve body. The partition member is connected with the swing valve. When the swing valve has a swing valve opening, the partition member divides the swing valve opening into a plurality of sub-openings, and each of the sub-openings faces a sub-cavity respectively. The swing valve opening is formed by the rotation of the valve plate relative to the swing valve body, and the shape of the partition member is determined according to the rotation path of the valve plate. The air extraction device of the present invention adjusts the area of the opening of the pendulum valve by adjusting the rotation of the valve plate relative to the main body of the pendulum valve, and determines the shape of the partition member according to the rotation path of the valve plate, so as to determine the opening of the pendulum valve that is opposite to the sub-cavity. the area of the sub-opening, and then use a vacuum pump to provide low air pressure for the cavity to be processed connected to the sub-cavity. At the same time, since the mixing chambers are separated by the valve plate, the problem of gas exchange in different chambers to be processed can be avoided, and the stability of the chamber environment and the processing quality of semiconductor devices in the chambers to be processed can be improved.
為使本發明的上述目的、特徵和優點能夠更加明顯易懂,下面將結合附圖對本發明的具體實施方式做詳細的說明。In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
在下面的說明中闡述了很多具體細節以便於充分理解本發明,但是本發明可以進一步採用其它不同於在此說明的其它方式來實施,本領域具有通常知識者可以在不違背本發明內涵的情況下做類似推廣,因此本發明不受下面揭露的具體實施例的限制。In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention can be further implemented in other ways different from those described herein, and those with ordinary knowledge in the art can do so without departing from the connotation of the present invention. Similar promotion is made below, so the present invention is not limited by the specific embodiments disclosed below.
其次,本發明結合示意圖進行詳細說明,在詳述本發明實施例時,為便於說明,表示器件結構的剖面圖不依照一般比例作局部放大,而且示意圖僅是示例,其不應限制本發明保護的範圍。此外,在實際製作中應包含長度、寬度及深度的三維空間尺寸。Next, the present invention is described in detail with reference to the schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the sectional views showing the device structure are not partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the protection of the present invention. range. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in the actual production.
目前,在半導體器件的製備過程中,可以在真空環境下對器件進行處理,通常可以透過連接抽氣裝置,來為半導體器件所處的腔體提供真空環境。在具體實施時,可以為複數個腔體提供一套抽氣裝置,抽氣裝置可以同時降低複數個腔體的真空度。複數個腔體分別與中空的混合腔連接,混合腔連接擺閥,且擺閥連接真空泵,在擺閥具有一定開度時,真空泵可以透過擺閥開口為混合腔提供低氣壓,複數個腔體中的氣體流向混合腔,從而同時降低複數個腔體中的氣壓。At present, in the process of preparing a semiconductor device, the device can be processed in a vacuum environment. Usually, a vacuum environment can be provided for the cavity in which the semiconductor device is located by connecting an air extraction device. In a specific implementation, a set of air extraction devices can be provided for a plurality of cavities, and the air extraction device can reduce the vacuum degree of the plurality of cavities at the same time. The plurality of cavities are respectively connected with the hollow mixing chamber, the mixing chamber is connected with the swing valve, and the swing valve is connected with the vacuum pump. When the swing valve has a certain opening, the vacuum pump can provide low air pressure for the mixing chamber through the opening of the swing valve. The gas in the chamber flows to the mixing chamber, thereby reducing the gas pressure in the plurality of chambers at the same time.
然而,在降低複數個腔體的氣壓的方法中,複數個腔體中的氣體流向低壓的混合區域時,可能會由於熱運動而產生互竄,導致不同腔體內的氣壓氛圍以及氣壓狀態相互影響,其不利於腔體環境的穩定,且可能影響腔體內進行的半導體器件的處理品質。However, in the method for reducing the air pressure of a plurality of cavities, when the gases in the plurality of cavities flow to the low-pressure mixing region, they may channel each other due to thermal motion, resulting in the mutual influence of the air pressure atmosphere and the air pressure state in different cavities. , which is not conducive to the stability of the cavity environment, and may affect the processing quality of the semiconductor device in the cavity.
為了解決以上技術問題,本發明實施例提供了一種抽氣裝置,包括:真空泵、擺閥、混合腔以及混合腔中的分隔部件。其中,分隔部件將混合腔分為複數個子腔體,複數個子腔體用於分別連接複數個待處理腔體。擺閥連接混合腔和真空泵,且擺閥包括閥板和擺閥主體。分隔部件與擺閥連接,在擺閥具有擺閥開口時,分隔部件將擺閥開口分為複數個子開口,且複數個子開口分別正對複數個子腔體。並且,擺閥開口由閥板相對於擺閥主體的旋轉形成,分隔部件的形狀根據閥板的旋轉路徑確定。In order to solve the above technical problems, an embodiment of the present invention provides an air extraction device, which includes: a vacuum pump, a pendulum valve, a mixing chamber, and a separation component in the mixing chamber. Wherein, the separating component divides the mixing cavity into a plurality of sub-cavities, and the plurality of sub-cavities are used to connect a plurality of to-be-processed cavities respectively. The swing valve is connected with the mixing chamber and the vacuum pump, and the swing valve includes a valve plate and a swing valve body. The partition member is connected to the swing valve, and when the swing valve has a swing valve opening, the partition member divides the swing valve opening into a plurality of sub-openings, and the plurality of sub-openings face the plurality of sub-cavities respectively. In addition, the swing valve opening is formed by the rotation of the valve plate relative to the swing valve body, and the shape of the partition member is determined according to the rotation path of the valve plate.
本發明之抽氣裝置透過分隔部件將混合腔分為複數個子腔體,各子腔體與一個待處理腔體連接,待處理腔體內的氣體分別流向混合腔中對應的子腔體,使得不同的待處理腔體內的氣體不會發生互竄。混合腔和真空泵之間連接有擺閥,擺閥包括閥板和擺閥主體,擺閥具有擺閥開口時,真空泵透過擺閥開口抽取混合腔內的氣體,降低混合腔內的氣壓,從而降低待處理腔體內的氣壓。而分隔部件與擺閥連接,將擺閥開口分為複數個子開口,子開口正對子腔體,這樣真空泵可以透過各個子開口分別抽取正對的子腔體中的氣體,分別降低各個子腔體的氣壓,以及與子腔體連接的待處理腔體的氣壓。The air extraction device of the present invention divides the mixing chamber into a plurality of sub-chambers through the partition member, each sub-chamber is connected to a to-be-processed chamber, and the gas in the to-be-processed chamber flows to the corresponding sub-chambers in the mixing chamber respectively, so that different The gas in the cavity to be treated will not channel each other. A swing valve is connected between the mixing chamber and the vacuum pump. The swing valve includes a valve plate and a swing valve body. When the swing valve has an opening of the swing valve, the vacuum pump extracts the gas in the mixing chamber through the opening of the swing valve to reduce the air pressure in the mixing chamber, thereby reducing the Air pressure in the chamber to be treated. The partition part is connected to the pendulum valve, and divides the opening of the pendulum valve into a plurality of sub-openings, and the sub-openings face the sub-cavities, so that the vacuum pump can extract the gas in the opposite sub-cavities through the sub-openings, and reduce the pressure of each sub-cavity respectively. The air pressure of the body, and the air pressure of the cavity to be processed connected to the sub-cavity.
本發明實施例中,可以透過閥板相對於擺閥主體的旋轉路徑確定分隔部件的形狀,從而確定各子開口在擺閥開口中的相對面積,子開口對應於子腔體,子腔體連接待處理腔體,子開口的面積影響待處理腔體的低壓狀態,子開口面積越大,待處理腔體內的氣壓越低。因此,可以透過確定分隔部件的形狀來確定子開口在擺閥開口中的相對面積,從而確定各個待處理腔體內的氣壓狀態。In the embodiment of the present invention, the shape of the partition member can be determined through the rotation path of the valve plate relative to the swing valve body, thereby determining the relative area of each sub-opening in the swing valve opening. The sub-opening corresponds to the sub-cavity, and the sub-cavities are connected to each other. When receiving the processing cavity, the area of the sub-opening affects the low-pressure state of the cavity to be processed. The larger the area of the sub-opening, the lower the air pressure in the cavity to be processed. Therefore, the relative area of the sub-opening in the opening of the pendulum valve can be determined by determining the shape of the partition member, so as to determine the air pressure state in each cavity to be processed.
為了更好地理解本發明的技術方案和技術效果,以下將結合附圖對具體的實施例進行詳細的說明。In order to better understand the technical solutions and technical effects of the present invention, specific embodiments will be described in detail below with reference to the accompanying drawings.
參考圖1所示,為本發明實施例提供的一種抽氣裝置,包括:真空泵101、擺閥102、混合腔103以及混合腔103中的分隔部件104。其中,分隔部件104將混合腔103分為複數個子腔體,且複數個子腔體分別連接複數個待處理腔體105。Referring to FIG. 1 , an air extraction device provided by an embodiment of the present invention includes: a
待處理腔體105是半導體器件的形成過程中的反應腔,在半導體器件的製造過程中,需要對待處理腔體105進行真空處理,從而降低待處理腔體105的真空度。當然,待處理腔體105也可以是在其他情形下需要提供真空環境的腔體,在此不做限制。待處理腔體105的數量可以為兩個,也可以是兩個以上。The
複數個待處理腔體105可以是不同的反應腔,也可以是同一反應腔中的複數個反應室,複數個反應室可以同時進行相同的製程流程,也可以進行不同的製程流程,複數個待處理腔體105中可以具有相同的氣壓,也可以具有不同的氣壓。The plurality of
舉例來說,複數個待處理腔體105可以皆為對薄膜的電漿蝕刻的反應腔,在蝕刻的過程中,需要保持反應腔的低氣壓。具體來說,電漿在電場的作用下向薄膜運動以蝕刻薄膜表面,蝕刻過程中產生的氣體需要抽取到待處理腔體105之外,防止待處理腔體105內的氣壓增大而影響電漿的蝕刻效果。For example, the plurality of
本發明實施例中,待處理腔體105可以與混合腔103透過連接孔106連接,參考圖1所示,混合腔103可以連接真空泵101,利用真空泵101為混合腔103提供低壓環境,這樣待處理腔體105中的氣壓會透過連接孔106流向混合腔103,實現了對待處理腔體105的降壓。In the embodiment of the present invention, the
混合腔103和真空泵101可以透過擺閥102連接,透過擺閥102控制混合腔103和真空泵101是否連通,在擺閥102具有一定開口時,混合腔103和真空泵101連通,擺閥102開口越大,混合腔103和真空泵之間的通道截面積越大。待處理腔體105內的氣體在混合腔103內匯合並被真空泵101抽取,從而降低待處理腔體105內的氣壓,而透過在混合腔103和真空泵101之間設置擺閥102,以實現待處理腔體105內壓力的控制。The mixing
擺閥102可以包括閥板112和擺閥主體122,參考圖圖2(a)、圖2(b)和圖2(c)、圖3(a)、圖3(b)和圖3(c)所示,閥板112和擺閥主體122之間具有固定點,閥板112可以以固定點為中心相對於擺閥主體122旋轉運動,在閥板112與擺閥主體122不完全重合時,擺閥102產生擺閥開口,在閥板112和擺閥主體122之間具有位置100時,擺閥102具有較小的擺閥開口,而從位置100至位置900,隨著閥板112的旋轉,閥板112和擺閥主體122的重合面積越來越小,且擺閥開口越來越大。The
真空泵101透過擺閥開口抽取混合腔103內的氣體,實現複數個待處理腔體105的降壓,可以理解的是,降壓後的複數個待處理腔體105中的氣壓可以是相同的。在具體的實施例中,擺閥開口可以基於複數個待處理腔體105的氣壓需求來確定,在待處理腔體105內需要較大的氣壓時,設置較小的擺閥開口,在待處理腔體105內需要較小的氣壓時,則設置較大的擺閥開口。The
然而,上述對複數個待處理腔體105進行降壓的過程中,由於複數個待處理腔體105中的氣體流向低壓的混合腔103而在混合腔103中匯合,若複數個待處理腔體105內的壓力不同,例如複數個待處理腔體105中的一部分腔體內不進行蝕刻或鍍膜處理而存在較低的氣壓,另一部分腔體需要進行蝕刻或鍍膜處理而存在較高的氣壓,或者複數個待處理腔體105分別進行不同的操作處理導致內部氣壓不同,此時複數個待處理腔體105中的氣體會在混合腔103中匯合後,可能由於熱運動而產生互竄,導致複數個待處理腔體105之間的氣壓分佈以及氣壓狀態相互影響,不利於待處理腔體105中的環境穩定性。However, in the above process of depressurizing the plurality of
因此,本發明實施例中,可以利用分隔部件104將混合腔103分為複數個子腔體,各子腔體分別連接一個待處理腔體105,待處理腔體105中的氣體流向與其連接的子腔體後被抽走,這樣待處理腔體105內的氣體在流向混合腔103後不會發生互竄,且相互之間不會影響。Therefore, in the embodiment of the present invention, the mixing
分隔部件104可以進一步與擺閥102連接,在擺閥102具有擺閥開口時,分隔部件104將擺閥開口分為複數個子開口,複數個子開口分別正對複數個子腔體。擺閥102與真空泵101連接,在擺閥102具有擺閥開口時,真空泵101可以透過正對子腔體的子開口抽取混合腔103中各個子腔體的氣體,從而分別對與子腔體連接的待處理腔體105進行降壓。The
本發明實施例中,可以根據待處理腔體105內所需的氣壓確定各個子開口的相對面積,複數個子開口的面積可以相同也可以不同,例如複數個待處理腔體內105進行不同的處理操作時需要不同的氣壓,可以將複數個子開口的面積設置為不同的面積。當然,複數個子開口的面積可以具有大致相同的比值,在複數個待處理腔體105內進行相同的操作處理時需要相同大小的氣壓,可以將複數個子開口的面積設置為大致相同的面積。在具體的實施例中,複數個子開口之間的面積差異小於或等於預設值,這樣複數個待處理腔體105內的氣壓也大致相同。在本實施例中,預設值可以小於或等於10%,例如可以為5%、3%或1%等。In the embodiment of the present invention, the relative area of each sub-opening can be determined according to the air pressure required in the
在本發明實施例中,可以根據閥板112的旋轉路徑確定分隔部件104的形狀,例如根據閥板112的旋轉中心以及擺閥102的中心確定分隔部件104的形狀,分隔部件104的形狀決定了複數個子開口之間的相對面積,而擺閥102中閥板112和擺閥主體122之間的位置關決定了複數個子開口的總面積大小,進而確定與子開口正對的子腔體連接的待處理腔體105的氣壓。In this embodiment of the present invention, the shape of the
作為一種示例,在本實施例中,複數個子腔體、子開口和待處理腔體105的數量可以為2,分隔部件104為擋板,擋板在垂直擺閥開口所在的平面內可以呈現的形狀不影響子開口的相對面積,因此可以為直線、曲線或折線,例如擋板可以為垂直擺閥102設置的平面板或曲面板。可以理解的是,擋板在垂直擺閥開口所在的平面內呈現的形狀,影響複數個子腔體的相對體積,例如曲面板的形狀影響分隔後的兩個子腔體的實際體積。As an example, in this embodiment, the number of the plurality of sub-cavities, the sub-openings and the cavity to be processed 105 may be 2, the
擋板在與擺閥102連接的平面內可以呈現為直線、曲線或折線,擋板的形狀影響各子開口的相對面積,下文中將進行具體說明。The baffle may appear as a straight line, a curve or a broken line in the plane connected to the
擋板在與擺閥102連接的平面內可以呈現為直線,參考圖2(a)、圖2(b)和圖2(c)所示,為本發明實施例中一種擺閥102不同開度的示意圖,虛線表示擋板相對於擺閥102的位置。其中,閥板112與擺閥主體122的各個相對位置下,與兩個子腔體正對的擺閥開口中的子開口面積可以不同,擋板豎直平分混合腔103形成兩個子腔體,且豎直平分擺閥開口形成兩個子開口,從圖2(a)、圖2(b)和圖2(c)中可以看出,直線左側的子開口對應左側的子腔體,且直線右側的子開口對應右側的子腔體。The baffle plate may appear as a straight line in the plane connected to the
本發明實施例中,可以對不同擺閥開度下擺閥開口以及子開口的面積進行測量,可以理解的是,不同的擺閥開度對應不同的擺閥開口面積,擺閥開度越大,則擺閥開口面積越大。參考表1所示,為不同擺閥開度下擺閥開口的面積(Open area),以及兩個子開口的面積S1
和面積S2
的示意圖,面積的單位均為mm2
。其中,不同擺閥開度可以透過閥板112與擺閥主體122的相對位置(Blade position)表示,包括位置100、200、300、400、500、600、700、800、900,面積S1
為擋板右側的子開口的面積,面積S2
為擋板左側的子開口的面積,S1
+S2
為擺閥開口的面積,S1
/(S1
+S2
)表示面積S1
占擺閥開口面積的比例。很明顯的是,面積S1
的面積小於面積S2
的面積,在擺閥開口面積較小時,這種差異更加明顯。In the embodiment of the present invention, the area of the opening and the sub-openings of the swing valve with different opening degrees of the swing valve can be measured. It can be understood that different opening degrees of the swing valve correspond to different opening areas of the swing valve. The larger the opening area of the pendulum valve is. Referring to Table 1, it is a schematic diagram of the opening area (Open area) of the lower swing valve opening with different swing valve opening degrees, and the area S 1 and area S 2 of the two sub-openings, and the unit of area is mm 2 . Wherein, different swing valve opening degrees can be represented by the relative position (Blade position) of the
表1示出不同擺閥開度下擺閥開口以及子開口的面積。 Table 1 shows the area of the opening and the sub-openings of the swing valve with different opening degrees of the swing valve.
在本發明實施例中,為了保持待處理腔體105的無氧環境,可以進一步向待處理腔體105通入氣體,例如可以通入氮氣(N2
)、氬氣(Ar)等,因此可以進一步測量不同擺閥(Pendulum Valve,PV)開度下,不同的氣體流速下對應的兩個待處理腔體105內的氣壓。參考表2所示,為不同擺閥開度下不同氮氣流速對應的待處理腔體105的氣壓,這裡以位置100、300、500、700、900為例進行說明,氮氣流量的單位為每分鐘標準毫升(standard cubic centimeter per minute,sccm),氣壓單位為mTorr,其中,「/」前的是與面積S2
正對的子腔體連接的待處理腔體105的氣壓,且「/」後的是與面積S1
正對的子腔體連接的待處理腔體105的氣壓。由此可知,與面積S1
正對的子腔體連接的待處理腔體105的氣壓始終大於或等於與面積S2
正對的子腔體連接的待處理腔體105的氣壓。由此可知,隔板的存在導致兩個待處理腔體105的氣壓在一些擺閥開度下產生了差異,且擺閥開度越小,氣壓差異越明顯,例如在位置300兩個待處理腔體105之間的壓力差達到7.5%。In this embodiment of the present invention, in order to maintain the oxygen-free environment of the
表2示出不同擺閥開度下不同氣體流速對應的待處理腔體的氣壓。 Table 2 shows the air pressure of the cavity to be processed corresponding to different gas flow rates under different swing valve opening degrees.
本發明實施例中,可以進一步根據閥板112的旋轉路徑確定分隔部件104在與擺閥102連接的平面內的形狀和位置,從而更加合理地分配各個子開口的面積,以分別滿足待處理腔體105內的氣壓需求。具體來說,可以令各個子開口的面積在不同的擺閥開度下具有固定的比值,這樣可以穩定的為各待處理腔體105提高低壓環境,例如可以令各子開口的面積保持在1:1,這樣可以使各待處理腔體105的氣壓相等。In the embodiment of the present invention, the shape and position of the
下文中將對於如何實現各子開口的面積比例為1:1的情況,本領域具有通常知識者可以根據實際情況基於閥板112的旋轉路徑設計其他形狀的擋板,以使各子開口的面積保持在其他比值。In the following, how to realize the area ratio of each sub-opening to 1:1, those with ordinary knowledge in the art can design baffles of other shapes based on the rotation path of the
作為一種可能的實現方式,分隔部件104也可以在與擺閥102連接的平面內呈現為直線,直線經過擺閥102中心且與擺閥102中心與閥板112的旋轉中心的連線垂直。直線將擺閥開口分割為兩部分,而由於直線的位置與擺閥102的旋轉中心相關,對於不同大小的擺閥開口,分隔而成子開口的相對面積較為接近,複數個待處理腔體105的氣壓也較為接近。As a possible implementation manner, the separating
作為另一種可能的實現方式,分隔部件104可以在與擺閥102連接的平面內呈現為折線,形成折線的各個線段與閥板112的旋轉中心的距離一致,且折線經過擺閥102中心。折線將擺閥開口分割為兩部分,同時對於不同大小的擺閥開口,分隔而成子開口的相對面積較為接近,複數個待處理腔體105的氣壓也較為接近。As another possible implementation manner, the
作為再另一種可能的實現方式,分隔部件104在與擺閥102連接的平面內呈現為曲線,曲線可以為以閥板112的旋轉中心為圓心,並以旋轉中心和擺閥102中心的距離為半徑的圓弧。參考圖3(a)~圖3(c)所示,為本發明實施例中擺閥102的示意圖,中間的曲線表示擋板相對於擺閥102的位置,其中閥板112與擺閥主體122的各相對位置下,與兩個子腔體正對的擺閥開口中的子開口面積可以不同。擋板平分混合腔103形成兩個字腔體,且平分擺閥開口形成兩個子開口,從圖3(a)~圖3(c)可以看出,曲線左側的子開口對應左側的子腔體,曲線右側的子開口對應右側的子腔體,在擺閥開口的開度不同的情況下,兩個子腔體相對的子開口的面積大小保持相同或相近。As yet another possible implementation manner, the
本發明實施例中,可以對不同擺閥開度下擺閥開口以及子開口的面積進行測量,參考表3所示,表3為不同擺閥開度下下擺閥開口的面積(Open area),以及兩個子開口的面積S1
和面積S2
的示意圖,面積的單位均為mm2
。其中,不同擺閥開度可以透過閥板112與擺閥主體122的相對位置(Blade position)表示,包括位置100、200、300、400、500、600、700、800、900,面積S1
為擋板右側的子開口的面積,面積S2
為擋板左側的子開口的面積,S1
+S2
為擺閥開口的面積,S1
/(S1
+S2
)表示面積S1
占擺閥開口面積的比例。由此可以看出,兩個子開口的面積S1
和面積S2
基本相同,可以為複數個待處理腔體105提供基本一致的氣壓環境。In the embodiment of the present invention, the area of the opening and the sub-openings of the swing valve with different opening degrees of the swing valve can be measured. Referring to Table 3, Table 3 shows the opening area of the swing valve under different opening degrees of the swing valve (Open area), and A schematic diagram of the area S 1 and the area S 2 of the two sub-openings, and the unit of the area is mm 2 . Wherein, different swing valve opening degrees can be represented by the relative position (Blade position) of the
表3示出不同擺閥開度下擺閥開口以及子開口的面積。 Table 3 shows the area of the swing valve opening and the sub-openings with different swing valve opening degrees.
在本發明實施例中,為了保持待處理腔體105的無氧環境,可以進一步向待處理腔體105通入氣體,例如可以為氮氣(N2
)、氬氣(Ar)等,因此可以進一步測量不同擺閥開度下,不同氣體流速下對應的兩個待處理腔體105內的氣壓,參考表4所示,為不同擺閥開度下不同氮氣流速對應的待處理腔體105的氣壓,這裡以位置100、300、500、700、900為例進行說明,氮氣流量的單位為sccm,氣壓單位為mTorr,其中,「/」前的是與面積S2
正對的子腔體連接的待處理腔體105的氣壓,且「/」後的是與面積S1
正對的子腔體連接的待處理腔體105的氣壓。由此可知,與面積S1
正對的子腔體連接的待處理腔體105的氣壓始終接近於與面積S2
正對的子腔體連接的待處理腔體105的氣壓。由此可知,不同氣體流速下兩個待處理腔體105內的氣壓基本相同,且壓力差小於2%。In the embodiment of the present invention, in order to maintain the oxygen-free environment of the
表4表示不同擺閥開度下不同氮氣流速對應的待處理腔體的氣壓。 Table 4 shows the air pressure of the cavity to be treated corresponding to different nitrogen flow rates under different swing valve openings.
本實施例中,進一步測量了利用不同擋板之後兩個待處理腔體105中的氣壓的比值狀態,並將氣壓比值繪製成折線圖,參考圖4所示,為本發明實施例中不同擋板能夠實現的待處理腔體105的氣壓比值,圖4中可以看出,當擋板在擺閥102連接的平面內呈現為曲線時,兩個待處理腔體105內的氣壓差在2%以內,當擋板豎直平分擺閥主體122時,兩個待處理腔體105內的氣壓差達到7.5%,因此可以利用曲面板作為擋板,從而為複數個待處理腔體105提供相同或相近的氣壓環境。In this embodiment, the ratio state of the air pressure in the two to-
參考表5所示,為利用不同擋板時,複數個製程條件下蝕刻速率的比對情況,包括僅源電源(Source Only)的製程條件、高氣壓低偏壓的製程條件和標準氧化物(Oxide STD)的製程條件。其中,A1和A2分別表示待處理腔體105中與面積S1
正對的子腔體連接的待處理腔體105和與面積S2
正對的子腔體連接的待處理腔體105的蝕刻速率,Mismatch分別表示了A1和A2的差異值。其中,先前技術為平面板豎直平分擺閥開口時的測試結果,本發明為以曲面板平分擺閥開口為例的測試結果,可以看出,平面板豎直平分擺閥開口時兩個待處理腔體105內的蝕刻速率差高達1.89%,而曲面板平分擺閥開口時,兩個待處理腔體105內的蝕刻速率差在1%以內。Refer to Table 5 for the comparison of etching rates under multiple process conditions when using different baffles, including the process conditions of Source Only, the process conditions of high pressure and low bias, and the standard oxide ( Oxide STD) process conditions. Among them, A1 and A2 respectively represent the etching of the to-
表5表示利用不同擋板,在複數個製程條件下蝕刻速率的比對結果。 Table 5 shows the comparison results of etching rates under various process conditions using different baffles.
本發明實施例提供了一種抽氣裝置,包括:真空泵、擺閥、混合腔以及混合腔中的分隔部件。其中,分隔部件將混合腔分為複數個子腔體,各子腔體分別連接一個待處理腔體,擺閥連接混合腔和真空泵,擺閥包括閥板和擺閥主體,分隔部件與擺閥連接,在擺閥具有擺閥開口時,分隔部件將擺閥開口分為複數個子開口,各子開口分別正對一個子腔體,擺閥開口由閥板相對於擺閥主體的旋轉形成,分隔部件的形狀根據閥板的旋轉路徑確定。本發明之抽氣裝置透過調節閥板相對於擺閥主體的旋轉調節擺閥開口面積,根據閥板的旋轉路徑確定分隔部件的形狀,從而確定擺閥開口中與子腔體正對的子開口的面積,進而利用真空泵為與子腔體連接的待處理腔體提供低氣壓,同時由於閥板將混合腔分隔開,可以避免不同的待處理腔體內的氣體發生互竄的問題,提高腔體環境的穩定性以及在待處理腔體內進行的半導體器件的處理品質。An embodiment of the present invention provides an air extraction device, which includes: a vacuum pump, a pendulum valve, a mixing chamber, and a separation part in the mixing chamber. The separating part divides the mixing chamber into a plurality of sub-chambers, each sub-chamber is connected to a cavity to be treated, the swing valve is connected to the mixing chamber and the vacuum pump, the swing valve includes a valve plate and a swing valve body, and the separating part is connected to the swing valve. , when the pendulum valve has a pendulum valve opening, the partition member divides the pendulum valve opening into a plurality of sub-openings, each of which faces a sub-chamber, and the pendulum valve opening is formed by the rotation of the valve plate relative to the pendulum valve body, and the partition member The shape is determined according to the rotation path of the valve plate. The air extraction device of the present invention adjusts the opening area of the pendulum valve by adjusting the rotation of the valve plate relative to the main body of the pendulum valve, and determines the shape of the partition member according to the rotation path of the valve plate, thereby determining the sub-opening in the opening of the pendulum valve that is opposite to the sub-cavity. Then, the vacuum pump is used to provide low air pressure for the cavity to be processed connected to the sub-cavity. At the same time, because the valve plate separates the mixing cavity, it can avoid the problem of gas in different cavity to be processed. The stability of the bulk environment and the processing quality of the semiconductor device in the chamber to be processed.
上述對本發明實施例的抽氣裝置進行了詳細說明,此外,本發明進一步提供了利用上述抽氣裝置進行抽氣處理的抽氣方法,包括:基於待處理腔體105的氣壓需求來確定擺閥開口,以便利用真空泵101降低所示待處理腔體105的氣壓。The air extraction device according to the embodiment of the present invention is described in detail above. In addition, the present invention further provides an air extraction method for performing air extraction processing by using the above air extraction device, including: determining the swing valve based on the air pressure demand of the
本發明進一步提供了一種多腔電漿處理器,包括:複數個相鄰排佈的電漿處理腔體,以及上述的抽氣裝置。The present invention further provides a multi-chamber plasma processor, comprising: a plurality of adjacently arranged plasma processing chambers, and the above-mentioned air extraction device.
以上所述,僅是本發明的較佳實施例而已,並非對本發明作任何形式上的限制。雖然本發明已以較佳實施例揭露如上,然而其並非用以限定本發明。任何本領域具有通常知識者在不脫離本發明技術方案範圍情況下,都可利用上述揭露的方法和技術內容對本發明技術方案做出許多可能的變動和修飾,或修改為具有等同變化的等效實施例。因此,凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所做的任何簡單修改、等同變化及修飾,均仍屬本發明技術方案保護的範圍內。The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the art can make many possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the scope of the technical solution of the present invention, or modify it into an equivalent with equivalent changes. Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solutions of the present invention still fall within the protection scope of the technical solutions of the present invention.
100,200,300,400,500,600,700,800,900:位置 101:真空泵 102:擺閥 103:混合腔 104:分隔部件 105:待處理腔體 106:連接孔 112:閥板 122:擺閥主體 S1 ,S2 :面積100, 200, 300, 400, 500, 600, 700, 800, 900: Position 101: Vacuum pump 102: Swing valve 103: Mixing chamber 104: Separation part 105: Chamber to be treated 106: Connection hole 112: Valve plate 122: Swing valve body S 1 , S 2 : Area
為了更清楚地說明本發明實施例或先前技術中的技術方案,下面將對實施例或先前技術的說明中所需要使用的附圖作簡單地介紹。顯而易見地,下面說明中的附圖僅僅是本說明書中記載的一些實施例,對於本領域具有通常知識者而言,在不付出創造性勞動的前提下,可以根據這些附圖進一步獲得其它的附圖。 圖1為本發明實施例提供的一種抽氣裝置的結構示意圖; 圖2(a)、圖2(b)和圖2(c)為本發明實施例提供的一種擺閥的不同開度的示意圖; 圖3(a)、圖3(b)和圖3(c)為本發明實施例提供的另一種擺閥的不同開度的示意圖;以及 圖4為本發明實施例提供的待處理腔體內氣壓比值的折線圖。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the accompanying drawings that are required in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments described in this specification, and for those with ordinary knowledge in the art, other drawings can be further obtained according to these drawings without creative work. . 1 is a schematic structural diagram of an air extraction device according to an embodiment of the present invention; Fig. 2(a), Fig. 2(b) and Fig. 2(c) are schematic diagrams of different opening degrees of a swing valve provided by an embodiment of the present invention; 3(a), 3(b) and 3(c) are schematic diagrams of different opening degrees of another swing valve according to an embodiment of the present invention; and FIG. 4 is a broken line diagram of the air pressure ratio in the cavity to be processed according to an embodiment of the present invention.
100,200,300:位置 100,200,300: Location
112:閥板 112: valve plate
122:擺閥主體 122: Swing valve body
S1,S2:面積 S 1 , S 2 : Area
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