TWI520211B - Semiconductor processing equipment - Google Patents

Description

Semiconductor process equipment

The present invention relates to a semiconductor process apparatus; and more particularly to a semiconductor process apparatus having a flow field adjustment unit.

Dry etch has the ability to be precision etched and is therefore a common etch process technology in the semiconductor industry today.

Dry etching, also known as plasma etching, uses gas as the main etching medium and drives the reaction by plasma energy. Finally, the active reactive ions generated inside the plasma and the free radicals impinge on the surface of a semiconductor wafer. To achieve the purpose of dry etching. The uniformity of the above etching gas in the process chamber has a significant influence on the quality of the etching process, and may even lead to poor performance of the final semiconductor product. Therefore, how to control the gas flow field in the process chamber, and then evenly distribute the gas therein, is worthy of consideration by relevant personnel.

An embodiment of the present invention provides a semiconductor processing apparatus including a chamber, a partition, and a pumping unit, wherein the chamber is for accommodating a semiconductor component, and the spacer is disposed at one side of the chamber, and The main body, a carrying portion and a first-class field adjusting unit, the main body is formed with a circular opening, the carrying portion is disposed at the center of the opening, and the flow field adjusting unit is disposed between the carrying portion and the main body, and corresponds to The opening, wherein the flow field adjusting unit has a ring structure and a plurality of slits, and the slit is provided in the foregoing The annular structure is radially arranged with respect to a central axis of the opening, and the air extraction unit is disposed outside the chamber for evacuating the chamber through the slit.

In one embodiment, the slits have the same size and the distance between the slits is substantially equal.

In an embodiment, the carrying portion has a circular structure, and the circular structure and the annular structure are symmetric with respect to the central axis.

In an embodiment, the flow field adjusting unit further has at least one stopper, and the stopper has a circular arc structure and covers a part of the slit.

In an embodiment, the stopper is movably disposed on the ring structure.

In an embodiment, the central angle of the stop corresponds to about 30 degrees, 60 degrees, 90 degrees, or 120 degrees.

In one embodiment, the semiconductor processing device further includes a first magnetic ring and a second magnetic ring. The first magnetic ring is disposed on the flow field adjusting unit, and the second magnetic ring is disposed outside the cavity. Corresponding to the first magnetic ring, a magnetic force is generated between the first magnetic ring and the second magnetic ring to drive the flow field adjusting unit to rotate.

In one embodiment, the first magnetic ring is disposed on an inner edge of the annular structure and has a plurality of first magnets, and the second magnetic ring is disposed inside the first magnetic ring and has a plurality of second magnets. And a magnetic repulsion force is generated between the first magnet and the second magnet to drive the flow field adjusting unit to rotate.

In an embodiment, the second magnetic ring is driven by a stepping motor Rotate.

In an embodiment, the first magnetic ring has substantially the same height as the second magnetic ring.

10‧‧‧Semiconductor process equipment

100‧‧ ‧ partition

100a‧‧‧ Subject

100b‧‧‧ openings

102‧‧‧Loading Department

104‧‧‧Flow field adjustment unit

104a‧‧‧slit

104b‧‧‧block

200a‧‧‧First magnetic ring

200b‧‧‧Second magnetic ring

A‧‧‧ center axis

C‧‧‧室

C1‧‧‧ air inlet

M1‧‧‧first magnet

M2‧‧‧second magnet

V‧‧‧Pumping unit

Θ‧‧‧ center angle

Fig. 1 is a view showing a semiconductor process apparatus according to an embodiment of the present invention.

Fig. 2 is a view showing a spacer in the semiconductor manufacturing apparatus of Fig. 1.

Fig. 3 is a view showing a spacer of another embodiment of the present invention.

Fig. 4A is a view showing a flow field adjusting unit according to still another embodiment of the present invention, which is rotated by a magnetic repulsion.

Fig. 4B is a cross-sectional view taken along line XI-XII of Fig. 4A.

Referring to FIG. 1 , a semiconductor processing apparatus 10 according to an embodiment of the present invention is, for example, a dry (plasma) etching machine, and mainly includes a chamber C, a partition 100, and an air extracting unit V. The chamber C can be used to accommodate at least one semiconductor component W (for example, a wafer), and the spacer 100 is disposed at the bottom of the chamber C, thereby substantially partitioning the chamber C and the semiconductor process equipment device 10. Other areas in the middle. The pumping unit V (for example, a vacuum pump) may be disposed at the bottom of the semiconductor processing equipment device 10, and evacuate the chamber C, so that the chamber C reaches a vacuum condition, and then the etching gas required for the etching process may be performed. It is then passed through an air inlet C1 located at the upper end of the chamber C.

Next, please refer to FIGS. 1 and 2 together, wherein FIG. 2 is a schematic view showing the spacer 100 of the semiconductor processing apparatus 10 in FIG. 1. The partition plate 100 includes a main body 100a (formed with a circular opening 100b), a circular bearing portion 102, and An annular flow field adjustment unit 104. The carrying portion 102 is disposed at the center of the opening 100b and can be used to carry the semiconductor component W. Further, the flow field adjusting unit 104 is disposed between the main body 100a and the carrying portion 102 and corresponds to a region of the opening 100b that is not covered by the carrying portion 102. The plurality of slits 104a are disposed on the flow field adjusting unit 104 to allow the chamber C to communicate with other regions of the semiconductor processing device 10.

It should be noted that the slits 104a on the flow field adjusting unit 104 in the embodiment have the same size and are radially arranged with respect to the central axis A of the circular opening 100b of the main body 100a. The distance between the slits 104a is substantially equal, so that the gas flow field in the chamber C is symmetric with respect to the central axis A and uniformly distributed (the circular bearing portion 102 and the annular flow field adjusting unit in this embodiment) Each of the 104 is symmetric with respect to the central axis A) of the opening 100b to prevent the etching gas from being concentrated in a local region of the chamber C, thereby improving the quality of the etching process.

Fig. 3 is a view showing a spacer 100 according to another embodiment of the present invention. As shown in FIG. 3, at least one arc-shaped stopper 104b is movably disposed on the flow field adjusting unit 104 in the present embodiment to cover the slit 104a of a portion of the flow field adjusting unit 104. The central angle θ corresponding to the stop 104b may be about 30 degrees, 60 degrees, 90 degrees, or 120 degrees, and the number and the set position may be designed according to the gas flow field in the chamber C. As such, the flow field adjusting unit 104 of the present embodiment may further have the effect of improving the non-uniform gas flow field in the chamber C (for example, when the aforesaid pumping unit V or the air inlet C1 is set to be eccentric).

4A and 4B are schematic views showing a semiconductor processing apparatus 10 according to still another embodiment of the present invention, wherein FIG. 4A (upper view) omits the main body 100a and The carrying portion 102 is used to clearly illustrate the features of the invention of the embodiment. As shown in FIG. 4A and FIG. 4B, the semiconductor processing apparatus 10 of the present embodiment further includes a first magnetic ring 200a and a second magnetic ring 200b. The first magnetic ring 200a is connected to the inner edge of the flow field adjusting unit 104. And the inner edge is perpendicular to the aforementioned carrying portion 102 and extends downward (as shown in FIG. 4B).

The second magnetic ring 200b is disposed below the carrier portion 102 (outside the chamber C) and corresponds to the aforementioned first magnetic ring 200a. As shown in FIG. 4B, the second magnetic ring 200b in this embodiment is located inside the first magnetic ring 200a, and both have substantially the same height. It should be understood that the second magnetic ring 200b may also be disposed on the outer side of the first magnetic ring 200a, but the magnetic force generated between the two magnetic rings may have the effect of driving the flow field adjusting unit 104 to rotate as described below.

Continuing to refer to FIGS. 4A and 4B, the first magnetic ring 200a has a plurality of first magnets M1, and the second magnetic ring 200b has a plurality of second magnets M2, wherein the first magnets M1 and The second magnets M2 have the same polarity (for example, both S poles or N poles), and accordingly, when the second magnetic ring 200b is rotated by a stepping motor, a magnetic force is generated between the second magnet ring 200b and the first magnetic ring 200a. The repulsive force can drive the flow field adjusting unit 104 to rotate (as shown in FIG. 4A). In this way, the flow field adjusting unit 104 in this embodiment can dynamically adjust (vacuum) the gas flow field in the chamber C by the mechanism of magnetic force.

In summary, the present invention provides a semiconductor processing apparatus, such as a dry etching machine (or a chemical vapor deposition (CVD) machine or a plasma assisted chemical vapor deposition (PECVD) machine), The utility model mainly comprises a chamber and a partition plate, wherein the partition plate is used for separating the chamber and other regions in the semiconductor processing equipment, and comprises a first-class field adjusting unit, wherein the flow field adjusting unit can be The gas flow field in the chamber is uniformly distributed, so that the problem of uneven concentration of etching (reaction) gas inside the chamber can be effectively avoided, thereby improving the quality of the etching process.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. Those skilled in the art having the ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧ ‧ partition

100a‧‧‧ Subject

100b‧‧‧ openings

102‧‧‧Loading Department

104‧‧‧Flow field adjustment unit

104a‧‧‧slit

104b‧‧‧block

A‧‧‧ center axis

θ ‧‧‧ center angle

Claims (10)

A semiconductor processing apparatus comprising: a chamber for accommodating a semiconductor component; a spacer disposed on one side of the chamber, and comprising: a body formed with a circular opening; a carrier portion disposed at a central portion of the opening for carrying the semiconductor component; a first-stage field adjusting unit disposed between the carrying portion and the body and corresponding to the opening, wherein the flow field adjusting unit has a ring structure and a plurality of slits The slits are disposed on the annular structure and are radially arranged with respect to a central axis of the opening; and an air extraction unit is disposed outside the cavity for the cavity through the slits Room pumping. The semiconductor process apparatus of claim 1, wherein the slits have the same size, and the distances between the slits are equal. The semiconductor process apparatus of claim 1, wherein the carrying portion has a circular structure, and the circular structure and the annular structure are symmetric with respect to the central axis. The semiconductor process apparatus of claim 1, wherein the flow field adjusting unit further has at least one stopper, the stopper having a circular arc structure and covering the slits of the portion. The semiconductor process apparatus of claim 4, wherein the stop is movably disposed on the annular structure. The semiconductor process equipment of claim 4, wherein the stop has a central angle of about 30 degrees, 60 degrees, 90 degrees, or 120 degrees. The semiconductor process device of claim 4, wherein the semiconductor process device further includes a first magnetic ring and a second magnetic ring, the first magnetic ring is disposed on the flow field adjusting unit, and the first The second magnetic ring is disposed outside the cavity and corresponds to the first magnetic ring, wherein a magnetic force is generated between the first magnetic ring and the second magnetic ring to drive the flow field adjusting unit to rotate. The semiconductor process device of claim 7, wherein the first magnetic ring is disposed at an inner edge of the annular structure and has a plurality of first magnets, and the second magnetic ring is disposed on the first magnetic ring The inner side has a plurality of second magnets, wherein a magnetic repulsion force is generated between the first magnets and the second magnets to drive the flow field adjusting unit to rotate. The semiconductor process apparatus of claim 7, wherein the second magnetic ring is driven to rotate by a stepping motor. The semiconductor process apparatus of claim 7, wherein the first magnetic ring has the same height as the second magnetic ring.