TWI763090B - Correction method for probe offset - Google Patents
Correction method for probe offset Download PDFInfo
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- TWI763090B TWI763090B TW109136711A TW109136711A TWI763090B TW I763090 B TWI763090 B TW I763090B TW 109136711 A TW109136711 A TW 109136711A TW 109136711 A TW109136711 A TW 109136711A TW I763090 B TWI763090 B TW I763090B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
- G01R31/2808—Holding, conveying or contacting devices, e.g. test adapters, edge connectors, extender boards
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2818—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP] using test structures on, or modifications of, the card under test, made for the purpose of testing, e.g. additional components or connectors
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Abstract
一種探針偏移的校正方法,適用由一處理單元實施,提供一待測電路板,該待測電路板具有多個焊墊,及具有多個分別能讓對應的該焊墊的一表面露出的實際開窗區金屬範圍,且該實際開窗區金屬範圍具有多個對應該等焊墊的扎痕。以一光學裝置擷取該等扎痕影像及該等實際開窗區金屬範圍的輪廓影像。將該等扎痕影像疊合,使該等實際開窗區金屬範圍的輪廓影像相互堆疊而交集成一交集區域。在該交集區域中,計算出一離該交集區域的一中心的位移量,作為該探針移動補償之參考。A method for calibrating probe offset, suitable for being implemented by a processing unit, provides a circuit board to be tested, the circuit board to be tested has a plurality of solder pads, and has a plurality of solder pads which can respectively expose a surface of the corresponding solder pads The actual metal area of the window area, and the actual metal area of the window area has a plurality of tie marks corresponding to the solder pads. An optical device is used to capture the puncture images and the outline images of the actual metal area of the window area. The tie mark images are superimposed, so that the outline images of the metal area of the actual window area are stacked on each other to form an intersection area. In the intersection area, a displacement amount from a center of the intersection area is calculated as a reference for the probe movement compensation.
Description
本發明是有關於一種校正方法,特別是指一種探針偏移的校正方法。 The present invention relates to a calibration method, in particular to a probe offset calibration method.
一般電路板製作過程中,難免會受製程或外在因素而造成斷路或短路等電性上的瑕疵,因此,需透過一電測裝置對電路板進行電性測試,以即時將不良的電路板篩檢出來。 In the process of making a general circuit board, it is inevitable that there will be electrical defects such as open circuit or short circuit due to the manufacturing process or external factors. Therefore, it is necessary to conduct an electrical test on the circuit board through an electrical testing device to immediately detect the defective circuit board. Screened out.
電路板在電測裝置中進行電性測試時,主要是透過電測裝置中的電測治具進行,電測治具具有多個能與電路板的多個焊墊(pad)電性接觸的探針,將電路板設置在電測治具下方並進行定位後,透過讓電測治具的該等探針朝對應的該等焊墊進行扎針,以測試得知電路板的電性狀況。 When the circuit board is electrically tested in the electrical measuring device, it is mainly carried out through the electrical measuring jig in the electrical measuring device. For the probes, after the circuit board is placed under the electrical measuring jig and positioned, the probes of the electrical measuring jig are pinned toward the corresponding solder pads to test the electrical condition of the circuit board.
然而,電測治具的該等探針在與電路板的該等焊墊進行扎針時,常因定位不準確、電路板蝕刻、開窗及膨脹誤差、電測治具本身的設計誤差,或電測治具安裝到電測裝置的組裝誤差等外在因素,造成該等探針沒有確切的扎在對應的焊墊的理想點位上,進 而影響電性測試的準確性。 However, when the probes of the electrical measuring jig are pinned with the solder pads of the circuit board, it is often caused by inaccurate positioning, circuit board etching, window opening and expansion errors, design errors of the electrical measuring jig itself, or External factors such as the assembly error of the electrical measuring fixture installed on the electrical measuring device cause the probes not to be pinned exactly on the ideal positions of the corresponding pads. And affect the accuracy of the electrical test.
為了讓該等探針都能精準扎在該等焊墊的理想點位上,現有改善方式是先在電路板上黏貼能覆蓋該等焊墊的藍膜(blue tape),接著,讓該等探針朝藍膜進行扎針,使藍膜上留有扎痕,隨後即以人工方式透過顯微鏡判斷藍膜上的扎痕與該等焊墊之間的位置關係,從而得知需要將電測治具旋轉多少角度或平移多少距離來進行校正,才能讓該等探針準確的扎在該等焊墊的理想點位上。 In order to make the probes can be accurately pinned on the ideal points of the pads, the existing improvement method is to stick a blue tape covering the pads on the circuit board, and then let the pads The probe is punctured towards the blue film, leaving a puncture mark on the blue film, and then the positional relationship between the puncture mark on the blue film and the solder pads is manually judged through a microscope, so as to know that electrical measurement and treatment are required. Only by adjusting the rotation angle or the translation distance can the probes be accurately pinned on the ideal positions of the solder pads.
然而,以人工方式來判斷藍膜上的該等扎痕與該等焊墊之間的位置關係,不僅判斷過程耗時,且人工判斷方式也容易有判斷誤差產生。 However, manually judging the positional relationship between the tie marks on the blue film and the solder pads is not only time-consuming, but also prone to judgment errors.
因此,本發明的目的,即在提供一種探針偏移的校正方法。 Therefore, the purpose of the present invention is to provide a method for calibrating probe offset.
於是,本發明探針偏移的校正方法適用由一處理單元實施,並包含提供一待測電路板,該待測電路板具有多個焊墊,及具有多個分別能讓對應的該焊墊的一表面露出的實際開窗區金屬範圍,且該實際開窗區金屬範圍具有多個對應該等焊墊的扎痕。 Therefore, the method for calibrating the probe offset of the present invention is suitable to be implemented by a processing unit, and includes providing a circuit board to be tested, the circuit board to be tested has a plurality of solder pads, and a plurality of solder pads that can be respectively corresponding The actual window area metal area exposed on a surface of the , and the actual window area metal area has a plurality of tie marks corresponding to the equivalent solder pads.
以一光學裝置擷取該等扎痕影像及該等實際開窗區金屬 範圍的輪廓影像。 Capture the puncture images and the actual metal of the window area with an optical device A contour image of the range.
將該等扎痕影像疊合,使該等實際開窗區金屬範圍的輪廓影像相互堆疊而交集成一交集區域。 The tie mark images are superimposed, so that the outline images of the metal area of the actual window area are stacked on each other to form an intersection area.
在該交集區域中,計算出一離該交集區域的一中心的位移量,作為該探針移動補償之參考。 In the intersection area, a displacement amount from a center of the intersection area is calculated as a reference for the probe movement compensation.
此外,本發明的另一探針偏移的校正方法包含提供一待測電路板,該待測電路板具有多個焊墊,及具有多個分別能讓對應的該焊墊的一表面露出的實際開窗區金屬範圍,且該實際開窗區金屬範圍具有多個對應該等焊墊的扎痕。 In addition, another method for calibrating probe offset of the present invention includes providing a circuit board to be tested, the circuit board to be tested has a plurality of bonding pads, and a plurality of bonding pads which can respectively expose a surface of the corresponding bonding pads. The actual metal area of the window area, and the actual metal area of the window area has a plurality of tie marks corresponding to the solder pads.
以一光學裝置擷取該等扎痕影像及該等實際開窗區金屬範圍的輪廓影像,並求得多個對應各別的該實際開窗區金屬範圍的理想扎點位置。 An optical device is used to capture the piercing mark images and the outline images of the actual metal area of the window area, and obtain a plurality of ideal tie point positions corresponding to the actual metal area of the window area.
依據該等扎痕影像及該等理想扎點位置,透過矩陣運算取得旋轉位移值,並依據該旋轉位移值,計算出多個新扎針位置。 According to the tie mark images and the ideal tie point positions, a rotation displacement value is obtained through matrix operation, and a plurality of new needle insertion positions are calculated according to the rotation displacement value.
將該等新扎針位置疊合,使該等實際開窗區金屬範圍的輪廓影像相互堆疊而交集成一交集區域。 The new pinning positions are superimposed, so that the outline images of the actual metal area of the window area are stacked on each other to form an intersection area.
在該交集區域中,計算出一離該交集區域的一中心的位移量,作為該探針移動補償之參考。 In the intersection area, a displacement amount from a center of the intersection area is calculated as a reference for the probe movement compensation.
本發明的功效在於,透過以該光學裝置擷取該等每個扎痕影像與該等實際開窗區金屬範圍的輪廓影像,並由該等理想扎點 位置與該等扎痕影像求得新扎針位置,再搭配該處理單元讓該等扎痕影像或新扎針位置二擇一重疊,使該等實際開窗區金屬範圍的輪廓影像交集成該交集區域,從而在該交集區域中計算出該中心,以供後續該等探針校正移動。 The effect of the present invention lies in that, by capturing the image of each tie mark and the outline image of the actual metal area of the window area by the optical device, the ideal tie points are obtained The position and the puncture mark images are used to obtain the new needle position, and then the processing unit is used to make the tie mark images or the new needle position alternately overlap, so that the outline images of the metal area of the actual window area are integrated into the intersection area. , so that the center is calculated in the intersection area for subsequent corrective movements of the probes.
1:電測裝置 1: Electrical measuring device
11:電測治具 11: Electric measuring fixture
111:探針 111: Probe
2:待測電路板影像 2: Image of the circuit board to be tested
20:新扎針位置 20: New needle position
200:待測電路板 200: PCB to be tested
21:扎痕影像 21: Tie Mark Image
22:焊墊的輪廓影像 22: Outline image of solder pad
23:實際開窗區金屬範圍的輪廓影像 23: Contour image of the metal range in the actual window area
230:正圓形開窗區 230: Circular window area
231:周緣 231: Perimeter
24:交集區域 24: Intersection area
241:周緣 241: Perimeter
25:中心 25: Center
26:安全扎針範圍 26: Safe needle penetration range
27:安全扎針範圍的交集區域 27: Intersection area of safe needle penetration range
28:安全中心 28: Security Center
D:誤差距離 D: Error distance
d:預定距離 d: predetermined distance
p:理想扎點位置 p: ideal tie point position
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一示意圖,說明本發明探針偏移的校正方法使用一電測裝置對一待測電路板進行電性測試;圖2是一示意圖,說明本發明探針偏移的校正方法一第一實施例;圖3是一示意圖,說明該第一實施例依據多個扎痕影像與多個理想扎點位置求得多個新扎針位置;圖4是一示意圖,說明該第一實施例將該等新扎針位置疊合,使對應的多個實際開窗區金屬範圍輪廓影像重疊;圖5是一示意圖,輔助圖4說明該第一實施例的該等實際開窗區金屬範圍的輪廓影像所得的一交集區域;圖6是一示意圖,說明本發明探針偏移的校正方法一第二實施例將該等扎痕影像疊合,使對應的多個實際開窗區金屬範圍輪廓影像 重疊;圖7是一示意圖,輔助圖6說明該第二實施例的該等實際開窗區金屬範圍的輪廓影像所得的一交集區域;圖8是一示意圖,說明本發明探針偏移的校正方法一第三實施例;圖9是一示意圖,說明該第三實施例將該等新扎針位置疊合,使對應的該等實際開窗區金屬範圍的輪廓影像內的多個安全扎針範圍重疊;圖10是一示意圖,輔助圖9說明該第三實施例該等安全扎針範圍重疊而得的一安全扎針範圍的交集區域;圖11是一示意圖,說明本發明探針偏移的校正方法一第四實施例將該等扎痕影像疊合,使對應的該等實際窗區金屬範圍的輪廓影像內的多個安全扎針範圍重疊;及圖12是一示意圖,輔助圖11說明該第四實施例該等安全扎針範圍重疊而得的一安全扎針範圍的交集區域。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic diagram illustrating the use of an electrical measuring device to a circuit to be tested in the method for correcting probe offset of the present invention The board is electrically tested; FIG. 2 is a schematic diagram illustrating a first embodiment of the probe offset correction method of the present invention; FIG. 3 is a schematic diagram illustrating the first embodiment based on a plurality of puncture images and a plurality of ideals A plurality of new pinning positions are obtained from the pinning point positions; FIG. 4 is a schematic diagram illustrating that the first embodiment superimposes these new pinning positions, so that the corresponding multiple actual window area metal range contour images are overlapped; FIG. 5 is a A schematic diagram, auxiliary FIG. 4 illustrates an intersection area obtained by contour images of the actual windowed metal areas of the first embodiment; FIG. 6 is a schematic diagram illustrating a second implementation of the probe offset correction method of the present invention For example, these tie marks images are superimposed, so that the corresponding multiple actual window area metal range contour images Overlapping; FIG. 7 is a schematic diagram, supplementary FIG. 6 illustrates an intersection area obtained by contour images of the actual windowed metal areas of the second embodiment; FIG. 8 is a schematic diagram illustrating the correction of probe offset according to the present invention A third embodiment of the method; FIG. 9 is a schematic diagram illustrating that the third embodiment superimposes the new pinning positions so as to overlap a plurality of safe pinning regions in the contour images of the corresponding metal regions of the actual window area. Fig. 10 is a schematic diagram, and auxiliary Fig. 9 illustrates the intersection area of a safe needle needle range obtained by overlapping the safety needle ranges of the third embodiment; Fig. 11 is a schematic diagram illustrating a method for correcting probe offset of the present invention The fourth embodiment superimposes the puncture marks images so as to overlap a plurality of safe needle puncture areas in the contour images of the corresponding metal areas of the actual window area; and FIG. 12 is a schematic diagram, which assists FIG. 11 to illustrate the fourth embodiment For example, the intersection area of a safe acupuncture range obtained by the overlapping of these safe acupuncture ranges.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。 Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated by the same reference numerals.
參閱圖1,本發明探針偏移的校正方法適用於一待測電路
板200透過一電測裝置1進行電性測試之前實施。
Referring to FIG. 1, the calibration method of the probe offset of the present invention is suitable for a circuit under test
The
一般而言,該待測電路板200具有多條電路走線、多個與該等電路走線電連接的焊墊,及一覆蓋在該等焊墊的防焊層;其中,該防焊層具有多個分別能讓對應的該焊墊的一表面露出的實際開窗區金屬範圍,而該電測裝置1包括一具有多個探針111的電測治具11。
Generally speaking, the
該待測電路板200設置在該電測裝置1的該電測治具11下方,使該等探針111間隔對應位在該等焊墊位置,透過讓該電測治具11朝該待測電路板200方向壓合,讓該等探針111分別與該等實際開窗區金屬範圍內的焊墊表面進行電性接觸,從而對該待測電路板200進行電性測試。
The
由於該電測治具11的該等探針111在與該待測電路板200的該等焊墊進行電性接觸時,常會因為定位不準確、電路板蝕刻、開窗及膨脹誤差、該電測治具11本身的設計誤差,或該電測治具11安裝到該電測裝置1的組裝差異等等外在因素,造成該等探針111產生偏移而沒有確切的與該等焊墊電性接觸,進而影響電性測試的準確性,因此,在發明探針偏移的校正方法中,要將該待測電路板200設置在該電測裝置1中進行電性測試時,會先進行一校正流程,以讓該等探針111確實的與該等焊墊電性接觸。
Since the
要說明的是,該防焊層會具有多個讓該焊墊露出的開窗
區,而實務上該等開窗區的大小可能小於或等於或大於該等焊墊,因此,在發明探針偏移的校正方法中,便是以該實際開窗區金屬範圍來表示在該開窗區露出而可供該等探針111扎針的焊墊。即,若該等開窗區大於或等於該等焊墊並使焊墊完全露出的話,則實際開窗區金屬範圍即為焊墊面積;若該等開窗區小於該等焊墊或遮蔽住部分焊墊,則實際開窗區金屬範圍等於焊墊於開窗區所露出的部分。
It should be noted that the solder mask will have a plurality of openings for exposing the solder pads
In practice, the size of the windowed areas may be smaller than or equal to or larger than the pads. Therefore, in the calibration method of the probe offset of the invention, the actual metal area of the windowed area is expressed in the The opening area exposes the bonding pads for the
該校正方法是先在該待測電路板200上黏貼一例如藍膜(blue tape)的膜層(但不限於藍色),並讓該膜層覆蓋該等實際開窗區金屬範圍露出的焊墊的表面,接著,將貼有該膜層的該待測電路板200設置在該電測裝置1中的該電測治具11下方,以進行該校正流程;其中,藍膜黏貼在該待測電路板200可選擇局部或全部覆蓋該等實際開窗區金屬範圍。
The calibration method is to first paste a film layer such as blue tape (but not limited to blue) on the
本發明案,考量到實際開窗區金屬範圍和焊墊理論中心的金屬範圍存在著誤差(其中,焊墊理論中心的金屬範圍可由設計圖檔得知),故是在光學裝置擷取實際開窗區金屬範圍的輪廓影像後,將該等探針111分別對應該等實際開窗區金屬範圍中心位置進行扎針,再進一步檢測該膜層上的多個扎痕的位置是否位在該等實際開窗區金屬範圍內,來判斷該等探針111是否能分別準確的扎在該等實際開窗區金屬範圍內的該焊墊的表面上。要另外說明的是,
因為扎針會透過膜層在實際開窗區金屬範圍上也留下扎痕,故亦可將膜層移除後,利用在實際開窗區金屬範圍上遺留的扎痕來判斷扎的準確與否。用膜層上的扎痕來判斷,其差別在於光學取像較容易呈現出留在膜層上的扎痕影像。
In the case of the present invention, considering that there is an error between the metal range of the actual window area and the metal range of the theoretical center of the pad (wherein, the metal range of the theoretical center of the pad can be known from the design drawing), so the optical device captures the actual opening. After the outline image of the metal area of the window area, the
參閱圖2,本發明探針偏移的校正方法的一第一實施例,該校正流程在該膜層上形成多個扎痕後,會直接透過一光學裝置拍攝具有該膜層的該待測電路板影像2,並用以擷取該膜層上的該等扎痕影像21、該等焊墊的輪廓影像22,及該等實際開窗區金屬範圍的輪廓影像23,圖2左側的不規則形顯示出該實際開窗區金屬範圍的輪廓影像23是小於對應的該焊墊的輪廓影像22,且實際開窗區金屬範圍的輪廓影像23可能位於該焊墊輪廓影像22上的任意位置(即兩者之間並非等比例縮小形狀)。而圖2右側的正圓形開窗區,顯示出焊墊的輪廓影像22係小於該正圓形開窗區230,故此時實際開窗區金屬範圍的輪廓影像23係等於焊墊輪廓影像22,即圖2右上側標號的22(23)。
Referring to FIG. 2 , a first embodiment of the method for calibrating probe offset according to the present invention, after the calibration process forms a plurality of punctures on the film layer, the film to be tested with the film layer is directly photographed through an optical device The
圖2中設定的理想扎針位置即是在該等實際開窗區金屬範圍的輪廓影像23內部的一相對中心處,也就是說,在透過該光學裝置與配合一處理單元,便能分析該膜層上實際扎針的該等扎痕影像21位置與對應的該等實際開窗區金屬範圍的輪廓影像23,進而可求出對應個別的該實際開窗區金屬範圍的理想扎點位置p。要說
明的是,該光學裝置並沒有特別限制,只要能清楚拍攝該些影像即可,而該處理單元可為例如電腦等能將該些影像進行處理運算的裝置。要注意到的是,本發明案所有實施例中雖假設實際開窗區金屬範圍的輪廓影像23的理想扎點位置p位於相對中心處,但實務上可依治具設計廠商的規劃來設計理想扎點位置p,不僅以相對中心處為限。
The ideal pinning position set in FIG. 2 is at a relative center inside the
若以理想扎點位置p位於相對中心處來設計,由於該等探針111是根據該等焊墊的實際開窗區金屬範圍中心位置進行扎針,但當該等探針111之間具有歪斜或扎針過程產生誤差時,雖能扎在該開窗區金屬範圍內而位在該開窗區金屬範圍的輪廓影像23內,但其扎痕影像21的位置可能會往不同方向偏移(如圖2所示),此時,便可透過該處理單元進行處理。
If the ideal pinning point position p is located at the relative center, since the
接著參閱圖3,依據該等扎痕影像21及該等理想扎點位置p,透過矩陣最小平方法運算取得一最佳旋轉位移值,並依據該最佳旋轉位移值,由該等扎痕影像21估算出多個新扎針位置20。此處要說明的是,因為該等探針111是固定在同一個電測治具11(見圖1)上,所以在移動該電測治具11時,該等探針111是整體跟著移動,因此,需要先求出對應個別的該實際開窗區金屬範圍的理想扎點位置p後,重新估算出該等新扎針位置20,才能讓該等探針111整體進行移動,其求出該等理想扎點位置p而移動該等探針
111的後續步驟如下說明。
Next, referring to FIG. 3 , according to the
配合參閱圖2及圖3,在本實施例中,該光學裝置擷取該等實際開窗區金屬範圍的輪廓影像23與該等扎痕影像21,及求出對應個別的該實際開窗區金屬範圍的理想扎點位置p,再透過矩陣運算方式由該等扎痕影像21估算出多個新扎針位置20。
Referring to FIG. 2 and FIG. 3 , in this embodiment, the optical device captures the
再參閱圖4及圖5,透過該處理單元將該等新扎針位置20疊合,使該等實際開窗區金屬範圍的輪廓影像23相互堆疊而交集成一交集區域24,並在該交集區域24中,計算出一離該交集區域的一中心25的位移量,作為該等探針111移動補償之參考,也就是說可透過該處理單元計算出重疊的該新扎針位置20與該中心25之間的誤差距離D,得知要將該電測治具11平移的距離,以讓該等探針111扎在該中心25上。要說明的是,該中心25在該交集區域24中,即是離該交集區域24的一周緣241之最近距離的最大值,且該中心25需位於該些實際開窗區金屬範圍的輪廓影像23上(即探針位移後需實際扎在開窗區金屬範圍的輪廓影像23上而能導通)。
Referring to FIGS. 4 and 5 again, the processing unit superimposes the new pinning
參閱圖6及圖7,為本發明探針偏移的校正方法一第二實施例,與圖4及圖5不同的是,此為以扎痕影像21做疊合的實施方式,同樣的將該等實際開窗區金屬範圍的輪廓影像23相互堆疊而交集成一交集區域24,並在該交集區域24中,計算出一離該交集區域的一中心25的位移量,作為該等探針111移動補償之參考,也就
是說可透過該處理單元計算出重疊的該扎痕影像21與該中心25之間的誤差距離D,得知要將該電測治具11平移的距離,以讓該等探針111扎在該中心25上。同樣的,該中心25在該交集區域24中,即是離該交集區域24的一周緣241之最近距離的最大值,且該中心25需位於該些實際開窗區金屬範圍的輪廓影像23上(即探針位移後需實際扎在開窗區金屬範圍的輪廓影像23上而能導通)。
Referring to FIG. 6 and FIG. 7 , it is a second embodiment of the method for correcting probe offset according to the present invention. The difference from FIG. 4 and FIG. 5 is that this is an embodiment in which the
在圖4~圖7中,該電測治具11平移的方向可透過將該中心25與該等新扎針位置20或該等扎痕影像21視為一座標系統上的兩個點,舉例而言,可將該中心25視為該座標系統上的原點,以判定該等新扎針位置20或該等扎痕影像21與該中心25之間的相對位置,來得知該電測治具11平移的方向。
In FIGS. 4 to 7 , the translation direction of the
參閱圖8,本發明探針偏移的校正方法的該第三實施例大致與該第一實施例相同,不同處在於,透過該光學裝置擷取該等扎痕影像21及相對應的該等實際開窗區金屬範圍的輪廓影像23之後,進一步針對該等開窗區實際金屬範圍的輪廓影像23進行影像處理,主要是由該處理單元來實施而在每一個該實際開窗區金屬範圍的輪廓影像23內找出一安全扎針範圍26,才進行後續影像疊合流程。
Referring to FIG. 8 , the third embodiment of the probe offset correction method of the present invention is substantially the same as the first embodiment, the difference is that the
參閱圖8,首先,由每一個該實際開窗區金屬範圍的輪廓影像23的一周緣231平均內縮一預定距離d而得到該位在該實際
開窗區金屬範圍的輪廓影像內的安全扎針範圍26;接著看到圖9,再將該等新扎針位置20重疊,使該等安全扎針範圍26相互堆疊而交集成一安全扎針範圍的交集區域27,再看到圖10,同樣地,在該安全扎針範圍的交集區域27中,計算出一離該安全扎針範圍的交集區域27的一安全中心28的位移量,最後,將該安全中心28的位置分別套用至該等實際開窗區金屬範圍的輪廓影像23內,並依據該等安全中心28來移動該電測治具11,使該等探針111朝該待測電路板200(見圖1)方向壓合時,能分別對應扎在該等安全中心28上;其中,該安全中心28是離該安全扎針範圍的交集區域27的周緣之最近距離的最大值,且該安全中心28需位於該些實際開窗區金屬範圍的輪廓影像23上(即探針位移後需實際扎在開窗區金屬範圍的輪廓影像23上而能導通)。
Referring to FIG. 8 , first, the
參閱圖11及圖12,本發明探針偏移的校正方法一第四實施例,與圖9及圖10不同的是,此為以扎痕影像21做疊合的實施方式,同樣的使該等安全扎針範圍26相互堆疊而交集成一安全扎針範圍的交集區域27,並計算出一離該安全扎針範圍的交集區域27的一安全中心28的位移量,其中,該安全中心28是離該安全扎針範圍的交集區域27的周緣之最近距離的最大值,且該安全中心28需位於該些實際開窗區金屬範圍的輪廓影像23上(即探針位移後需實際扎在開窗區金屬範圍的輪廓影像23上而能導通)。
Referring to FIGS. 11 and 12 , a fourth embodiment of a probe offset correction method according to the present invention is different from FIGS. 9 and 10 in that this is an embodiment in which the
值得一提的是,在圖8~圖12的實施例中,由每一個該實際開窗區金屬範圍的輪廓影像23的周緣231平均內縮而得到的該安全扎針範圍26的目的在於,當該等探針111扎在該等實際開窗區金屬範圍的該安全扎針範圍26範圍內時,可以避免實施校正流程後,後續其他人為或外在因素進一步導致的誤差,而確保該等探針111確實扎在該實際開窗區金屬範圍內的焊墊上;其中,該預定距離d的決定是實施人員可依經驗或該等實際開窗區金屬範圍的態樣與大小自行決定。
It is worth mentioning that, in the embodiments of FIGS. 8 to 12 , the purpose of the safe
此外,要特別說明的是,本發明圖式中顯示出的該等焊墊的輪廓影像22與該等實際開窗區金屬範圍的輪廓影像23的形狀均為示意,實際情況可能為圓、橢圓、方形,或不規則等形狀,但均適用於本發明的校正方法,且本發明的該等探針111扎於該膜層上時,其對應位在每一個該實際開窗區金屬範圍輪廓影像23內的該扎痕影像21是以一個為示意說明,本發明探針偏移的校正方法同時適用於二線式或四線式量測方式,即不論在每一個實際開窗區金屬範圍輪廓影像23的扎痕影像21是一個、二個或複數個,其校正原理與前述相同,於此不加以贅述。
In addition, it should be noted that the shapes of the
綜上所述,本發明透過以該光學裝置擷取該等扎痕影像21與該等實際開窗區金屬範圍的輪廓影像23,再由該等理想扎點位置p與該等扎痕影像21求得新扎針位置20,以搭配該處理單元讓
該等新扎針位置20或扎痕影像21重疊,使該等實際開窗區金屬範圍的輪廓影像23交集成該交集區域24,從而在該交集區域24中計算出該中心25;更可進一步地在每一個該實際開窗區金屬範圍的輪廓影像23內預定出該安全扎針範圍26,而交集出該安全扎針範圍的交集區域27而在該安全扎針範圍的交集區域27內找出該安全中心28,更能在後續其他人為或外在因素產生額外誤差時,還能確保該等探針111確實扎在該實際開窗區金屬範圍內的焊墊上,本發明的校正方法能計算出該中心25或該安全中心28,使該電測治具11能依據該等中心25或該等安全中心28來移動,從而讓該等探針111朝該待測電路板200方向壓合時,能確保該等探針111確實扎在該實際開窗區金屬範圍內的焊墊上,故確實能達成本發明的目的。
To sum up, the present invention captures the
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。 However, the above are only examples of the present invention, and should not limit the scope of implementation of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the patent specification are still included in the scope of the present invention. within the scope of the invention patent.
2············· 待測電路板影像
20··········· 新扎針位置
21··········· 扎痕影像
22··········· 焊墊輪廓影像
23··········· 實際開窗區金屬範圍的輪廓影像
p············· 理想扎點
2・・・・・・・・・・・・・・・・・・・・・・・・・ Image of the circuit board to be tested
20···········
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200642029A (en) * | 2005-03-28 | 2006-12-01 | Tokyo Electron Ltd | Probing apparatus and positional deviation acquiring method |
TW200746337A (en) * | 2006-03-30 | 2007-12-16 | Tokyo Electron Ltd | Detection method of probe's tip location, storage medium storing the method, and probe device |
US20080218189A1 (en) * | 2007-03-06 | 2008-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and System for Automatically Managing Probe Mark Shifts |
US20160141216A1 (en) * | 2010-05-12 | 2016-05-19 | Stmicroelectronics S.R.L. | Probe pad with indentation |
CN109612386A (en) * | 2018-11-27 | 2019-04-12 | 深圳市明信测试设备有限公司 | A kind of probe contact precision detection method |
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TW200642029A (en) * | 2005-03-28 | 2006-12-01 | Tokyo Electron Ltd | Probing apparatus and positional deviation acquiring method |
TW200746337A (en) * | 2006-03-30 | 2007-12-16 | Tokyo Electron Ltd | Detection method of probe's tip location, storage medium storing the method, and probe device |
US20080218189A1 (en) * | 2007-03-06 | 2008-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and System for Automatically Managing Probe Mark Shifts |
US20160141216A1 (en) * | 2010-05-12 | 2016-05-19 | Stmicroelectronics S.R.L. | Probe pad with indentation |
CN109612386A (en) * | 2018-11-27 | 2019-04-12 | 深圳市明信测试设备有限公司 | A kind of probe contact precision detection method |
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