TWI763057B - Boost converter for eliminating start-up overshoot - Google Patents
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Abstract
Description
本發明係關於一種升壓轉換器,特別係關於一種可消除啟動過衝之升壓轉換器。 The present invention relates to a boost converter, in particular to a boost converter capable of eliminating start-up overshoot.
傳統升壓轉換器為了達成快速開機之功效,其輸出電位通常爬升較快,此容易造成啟動過衝(Start-up Overshoot)之問題,並導致對應之輸出電容器發生損壞。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。 In order to achieve the effect of fast start-up of a conventional boost converter, the output potential of the conventional boost converter usually rises quickly, which may easily cause the problem of start-up overshoot and cause damage to the corresponding output capacitor. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology.
在較佳實施例中,本發明提出一種消除啟動過衝之升壓轉換器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一功率切換器,根據一脈波寬度調變電位來選擇性地將該升壓電感器耦接至一接地電位;一脈波寬度調變積體電路,產生該脈波寬度調變電位,其中該脈波寬度調變積體電路係由一供應電位來進行供 電;一輸出級電路,耦接至該升壓電感器,並產生一輸出電位;一第一啟動電路,耦接至該輸出級電路,其中該第一啟動電路包括一正溫度係數電阻器;以及一第二啟動電路,耦接至該升壓電感器,其中該第二啟動電路包括一耦合線圈組;其中在一冷機模式中,該脈波寬度調變積體電路之該供應電位係由該第一啟動電路所產生,而接著在一熱機模式中,該脈波寬度調變積體電路之該供應電位係由該第二啟動電路所產生。 In a preferred embodiment, the present invention provides a boost converter for eliminating startup overshoot, comprising: a bridge rectifier that generates a rectified potential according to a first input potential and a second input potential; a boost inductor , receives the rectified potential; a power switch selectively couples the boost inductor to a ground potential according to a PWM potential; a PWM integrated circuit generates the pulse PWM potential, wherein the PWM integrated circuit is supplied by a supply potential electricity; an output stage circuit, coupled to the boost inductor, and generating an output potential; a first startup circuit, coupled to the output stage circuit, wherein the first startup circuit includes a positive temperature coefficient resistor; and a second start-up circuit coupled to the boost inductor, wherein the second start-up circuit includes a coupling coil set; wherein in a cold mode, the supply potential of the PWM integrated circuit is determined by The first start-up circuit is generated, and then in a warm-up mode, the supply potential of the PWM integrated circuit is generated by the second start-up circuit.
100,200:升壓轉換器 100,200: Boost Converter
110,210:橋式整流器 110, 210: Bridge Rectifiers
120,220:功率切換器 120,220: Power switch
130,230:脈波寬度調變積體電路 130, 230: Pulse Width Modulation Integrated Circuits
140,240:輸出級電路 140, 240: Output stage circuit
150,250:第一啟動電路 150,250: First start circuit
160,260:第二啟動電路 160,260: Second start circuit
162,262:耦合線圈組 162, 262: Coupling coil set
263:第一線圈 263: First Coil
264:第二線圈 264: Second coil
265:第三線圈 265: Third Coil
C1:第一電容器 C1: first capacitor
C2:第二電容器 C2: Second capacitor
C3:第三電容器 C3: Third capacitor
D1:第一二極體 D1: first diode
D2:第二二極體 D2: Second diode
D3:第三二極體 D3: Third diode
D4:第四二極體 D4: Fourth diode
D5:第五二極體 D5: Fifth diode
D6:第六二極體 D6: sixth diode
D7:第七二極體 D7: seventh diode
D8:第八二極體 D8: Eighth diode
DZ:齊納二極體 DZ: Zener Diode
M1:第一電晶體 M1: first transistor
N1:第一節點 N1: the first node
N2:第二節點 N2: second node
N3:第三節點 N3: The third node
N4:第四節點 N4: Fourth Node
N5:第五節點 N5: Fifth node
N6:第六節點 N6: sixth node
N7:第七節點 N7: seventh node
N8:第八節點 N8: Eighth Node
N9:第九節點 N9: ninth node
N10:第十節點 N10: The tenth node
N11:第十一節點 N11: Eleventh node
N12:第十二節點 N12: Twelfth Node
L1:第一電感器 L1: first inductor
L2:第二電感器 L2: Second Inductor
LU:升壓電感器 LU: boost inductor
Q2:第二電晶體 Q2: Second transistor
R1:第一電阻器 R1: first resistor
R2:第二電阻器 R2: Second resistor
R3:第三電阻器 R3: Third resistor
R4:第四電阻器 R4: Fourth resistor
RPTC:正溫度係數電阻器 RPTC: Positive Temperature Coefficient Resistor
VCC:供應電位 VCC: Supply potential
VIN1:第一輸入電位 VIN1: the first input potential
VIN2:第二輸入電位 VIN2: The second input potential
VM:脈波寬度調變電位 VM: PWM potential
VOUT:輸出電位 VOUT: output potential
VR:整流電位 VR: rectified potential
VSS:接地電位 VSS: ground potential
第1圖係顯示根據本發明一實施例所述之升壓轉換器之示意圖。 FIG. 1 shows a schematic diagram of a boost converter according to an embodiment of the present invention.
第2圖係顯示根據本發明一實施例所述之升壓轉換器之示意圖。 FIG. 2 shows a schematic diagram of a boost converter according to an embodiment of the present invention.
第3圖係顯示傳統升壓轉換器之輸出電位之波形圖。 FIG. 3 is a waveform diagram showing the output potential of a conventional boost converter.
第4圖係顯示根據本發明一實施例所述之升壓轉換器之輸出電位之波形圖。 FIG. 4 is a waveform diagram showing the output potential of the boost converter according to an embodiment of the present invention.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。 In order to make the objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are given in the following, and are described in detail as follows in conjunction with the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指 稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。 Certain terms are used in the description and the scope of the patent application to refer to called a specific element. It should be understood by those skilled in the art that hardware manufacturers may refer to the same element by different nouns. This specification and the scope of the patent application do not use the difference in name as a way to distinguish elements, but use the difference in function of the elements as a criterion for distinguishing. The words "including" and "including" mentioned in the entire specification and the scope of the patent application are open-ended terms, so they should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. Furthermore, the term "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described as being coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connecting means. Second device.
第1圖係顯示根據本發明一實施例所述之升壓轉換器100之示意圖。例如,升壓轉換器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,升壓轉換器100包括:一橋式整流器110、一升壓電感器LU、一功率切換器120、一脈波寬度調變積體電路130、一輸出級電路140、一第一啟動電路150,以及一第二啟動電路160。必須注意的是,雖然未顯示於第1圖中,但升壓轉換器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。
FIG. 1 shows a schematic diagram of a
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR。第一輸入電位VIN1和第二輸入電位VIN2皆可來自一外部輸入電源,其中第一輸入電位
VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可由90V至264V,但亦不僅限於此。升壓電感器LU可接收整流電位VR。功率切換器120可根據一脈波寬度調變電位VM來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。舉例而言,若脈波寬度調變電位VM為高邏輯位準,則功率切換器120即將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一短路路徑);反之,若脈波寬度調變電位VM為低邏輯位準,則功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一開路路徑)。脈波寬度調變積體電路130可產生脈波寬度調變電位VM。脈波寬度調變積體電路130可由一供應電位VCC來進行供電。輸出級電路140係耦接至升壓電感器LU,其中輸出級電路140可產生一輸出電位VOUT。例如,輸出電位VOUT可大致為一直流電位,其位準可約為400V,但亦不僅限於此。第一啟動電路150係耦接至輸出級電路140,其中第一啟動電路150包括一正溫度係數電阻器RPTC。第二啟動電路160係耦接至升壓電感器LU,其中第二啟動電路160包括一耦合線圈組162。必須注意的是,在一冷機模式中,脈波寬度調變積體電路130之供應電位VCC係由第一啟動電路150所產生,而接著在一熱機模式中,脈波寬度調變積體電路130之供應電位VCC係改由第二啟動電路160所產生。在此設計下,正溫度係數電阻器RPTC可與輸出級電路140共同形成一阻尼電路,而第一啟動電路150和第二啟動電路
160則可分別提供電力給脈波寬度調變積體電路130。根據實際量測結果,本發明所提之設計方式幾乎可完全消除升壓轉換器100之啟動過衝。
The
以下實施例將介紹升壓轉換器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。
The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之升壓轉換器200之示意圖。在第2圖之實施例中,升壓轉換器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一橋式整流器210、一升壓電感器LU、一功率切換器220、一脈波寬度調變積體電路230、一輸出級電路240、一第一啟動電路250,以及一第二啟動電路260。升壓轉換器200之第一輸入節點NIN1和第二輸入節點NIN2可分別由一外部輸入電源處接收一第一輸入電位VIN1和一第二輸入電位VIN2,而升壓轉換器200之輸出節點NOUT可用於輸出一輸出電位VOUT至一電子裝置(未顯示)。
FIG. 2 shows a schematic diagram of a
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3之陽極係耦接至一第二節點N2,而第三二
極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4之陽極係耦接至第二節點N2,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。
The
升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第三節點N3。 The first end of the boost inductor LU is coupled to the first node N1 to receive the rectified potential VR, and the second end of the boost inductor LU is coupled to a third node N3.
功率切換器220包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體。第一電晶體M1之控制端係用於接收一脈波寬度調變電位VM,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第三節點N3。脈波寬度調變電位VM可用於調整功率切換器220之責任週期。例如,若脈波寬度調變電位VM為高邏輯位準,則第一電晶體M1將被致能;反之,若脈波寬度調變電位VM為低邏輯位準,則第一電晶體M1將被禁能。
The
脈波寬度調變積體電路230可產生脈波寬度調變電位VM。例如,脈波寬度調變電位VM於升壓轉換器200初始化時可維持於一固定電位,而在升壓轉換器200進入正常使用階段後則可提供週期性之時脈波形。另外,脈波寬度調變積體電路230係由一供應電位VCC來進行供電。
The PWM
輸出級電路240包括一第五二極體D5、一第一電容器C1、一第一電阻器R1,以及一第二電阻器R2。第五二極體D5之陽極係耦接至第三節點N3,而第五二極體D5之陰極係耦接至輸出
節點NOUT。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至輸出節點NOUT,而第一電容器C1之第二端係耦接至接地電位VSS。第一電阻器R1之第一端係耦接至輸出節點NOUT,而第一電阻器R1之第二端係耦接至一第四節點N4。第二電阻器R2之第一端係耦接至第四節點N4,而第二電阻器R2之第二端係耦接至接地電位VSS。
The
第一啟動電路250包括一正溫度係數電阻器RPTC、一第一電感器L1、一第二電感器L2、一第六二極體D6、一第三電阻器R3、一齊納二極體DZ、一第二電晶體Q2,以及一第二電容器C2。正溫度係數電阻器RPTC之第一端係耦接至第二節點N2,而正溫度係數電阻器RPTC之第二端係耦接至接地電位VSS。當升壓轉換器200之溫度提高時,正溫度係數電阻器RPTC之電阻值將會變大;反之,當升壓轉換器200之溫度降低時,正溫度係數電阻器RPTC之電阻值將會變小。第一電感器L1之第一端係耦接至第二節點N2,而第一電感器L1之第二端係耦接至接地電位VSS。第二電感器L2之第一端係耦接至一第五節點N5,而第二電感器L2之第二端係耦接至一第六節點N6。在一些實施例中,第五節點N5更耦接至脈波寬度調變積體電路230之一接地腳位。必須注意的是,第一電感器L1係與第二電感器L2互相耦合(例如:第一電感器L1可位於一側,而第二電感器L2可位於相對另一側)。
The first start-up
第六二極體D6之陽極係耦接至第五節點N5,而第六二極體D6之陰極係耦接至一第七節點N7。第三電阻器R3之第一端
係耦接至第七節點N7,而第三電阻器R3之第二端係耦接至第六節點N6。齊納二極體DZ之陽極係耦接至第五節點N5,而齊納二極體DZ之陰極係耦接至一第八節點N8以選擇性地輸出供應電位VCC至脈波寬度調變積體電路230。例如,第二電晶體Q2可以是一NPN型雙載子接面電晶體。第二電晶體Q2之控制端係耦接至第七節點N7,第二電晶體Q2之第一端係耦接至第八節點N8,而第二電晶體Q2之第二端係耦接至第四節點N4。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至第五節點N5,而第二電容器C2之第二端係耦接至第八節點N8。
The anode of the sixth diode D6 is coupled to the fifth node N5, and the cathode of the sixth diode D6 is coupled to a seventh node N7. The first end of the third resistor R3
is coupled to the seventh node N7, and the second end of the third resistor R3 is coupled to the sixth node N6. The anode of the Zener diode DZ is coupled to the fifth node N5, and the cathode of the Zener diode DZ is coupled to an eighth node N8 to selectively output the supply potential VCC to the PWM
第二啟動電路260包括一耦合線圈組262、一第七二極體D7、一第八二極體D8、一第三電容器C3,以及一第四電阻器R4。耦合線圈組262包括一第一線圈263、一第二線圈264,以及一第三線圈265。第一線圈263具有一第一端和一第二端,其中第一線圈263之第一端係耦接至第一節點N1,而第一線圈263之第二端係耦接至第三節點N3。第二線圈264之第一端係耦接至一第九節點N9,而第二線圈264之第二端係耦接至一第十節點N10。第三線圈265之第一端係耦接至第十節點N10,而第三線圈265之第二端係耦接至一第十一節點N11。必須注意的是,第一線圈263、第二線圈264,以及第三線圈265係互相耦合(例如:第二線圈264和第三線圈265可位於同一側,而第一線圈263可位於相對另一側)。
The second start-up
第七二極體D7之陽極係耦接至第五節點N5,而第七二極體D7之陰極係耦接至第九節點N9。第八二極體D8之陽極係耦
接至第五節點N5,而第八二極體D8之陰極係耦接至第十一節點N11。第三電容器C3之第一端係耦接至第十節點N10,而第三電容器C3之第二端係耦接至一第十二節點N12。第四電阻器R4之第一端係耦接至第十二節點N12,而第四電阻器R4之第二端係耦接至第八節點N8以選擇性地輸出供應電位VCC至脈波寬度調變積體電路230。亦即,第一啟動電路250或第二啟動電路260可兩者擇一來產生前述之供應電位VCC。
The anode of the seventh diode D7 is coupled to the fifth node N5, and the cathode of the seventh diode D7 is coupled to the ninth node N9. Anode coupling of the eighth diode D8
Connected to the fifth node N5, and the cathode of the eighth diode D8 is coupled to the eleventh node N11. The first end of the third capacitor C3 is coupled to the tenth node N10, and the second end of the third capacitor C3 is coupled to a twelfth node N12. The first end of the fourth resistor R4 is coupled to the twelfth node N12, and the second end of the fourth resistor R4 is coupled to the eighth node N8 to selectively output the supply potential VCC to the PWM Variable
在一些實施例中,升壓轉換器200可依序操作於一第一階段、一第二階段、一第三階段,以及一第四階段,其操作原理可如下列所述。
In some embodiments, the
在第一階段期間,升壓轉換器200開始接收第一輸入電位VIN1和第二輸入電位VIN2。此時,輸入能量係經由升壓電感器LU和第五二極體D5傳遞至第一電容器C1,使得輸出電位VOUT逐漸上升。必須注意的是,正溫度係數電阻器RPTC、第一電感器L1,以及第一電容器C1三者可共同形成一RLC阻尼電路,其能微調輸出電位VOUT並有效地消除升壓轉換器200之啟動過衝。
During the first phase, the
在第二階段期間(亦即,前述之冷機模式),由於第一電感器L1和第二電感器L2互相耦合,故儲存於第一電感器L1上之能量會傳遞至第二電感器L2,從而拉升第七節點N7處之電位。此時,第二電晶體Q2被致能,而齊納二極體DZ發生逆向崩潰。因此,齊納二極體DZ可提供穩定之供應電位VCC給脈波寬度調變積體電路230,其中第二電容器C2可濾除供應電位VCC中之高頻雜訊。在
脈波寬度調變積體電路230由供應電位VCC進行供電之後,其可高頻地操作功率切換器220和升壓電感器LU,而輸出電位VOUT會逐漸趨近於一恆定值(例如:400V)。
During the second phase (ie, the aforementioned cooling mode), since the first inductor L1 and the second inductor L2 are coupled to each other, the energy stored in the first inductor L1 is transferred to the second inductor L2, Thus, the potential at the seventh node N7 is pulled up. At this time, the second transistor Q2 is enabled, and the reverse collapse of the Zener diode DZ occurs. Therefore, the Zener diode DZ can provide a stable supply potential VCC to the PWM
在第三階段期間,升壓轉換器200之溫度已上升至一臨界值(例如:攝氏85度),而正溫度係數電阻器RPTC之電阻值會變得非常大,其幾乎可視為一斷路。根據冷次定律,第一電感器L1和第二電感器L2會同時發生電壓反轉,以禁能第二電晶體Q2。此時,第一啟動電路250即停止輸出供應電位VCC給脈波寬度調變積體電路230。儲存於第二電感器L2上之能量會由第六二極體D6和第三電阻器R3所消耗掉。
During the third stage, the temperature of the
在第四階段期間(亦即,前述之熱機模式),第二啟動電路260可隨後代替第一啟動電路250來輸出供應電位VCC給脈波寬度調變積體電路230。無論升壓電感器LU處於儲能狀態或釋能狀態,第七電晶體D7或第八電晶體D8皆可擇一用於傳遞升壓電感器LU之能量。另外,第三電容器C3和第四電阻器R4可形成一延遲保護電路,以避免第二線圈264和第三線圈265意外發生短路燒毀。
During the fourth stage (ie, the aforementioned warm-up mode), the second start-up
第3圖係顯示傳統升壓轉換器之輸出電位VOUT之波形圖,其中橫軸代表時間,而縱軸代表電位位準。根據第3圖之量測結果,傳統升壓轉換器通常會面臨啟動過衝之問題(亦即,輸出電位VOUT之初始振盪波形),此往往會降低整體電路之使用壽命。 FIG. 3 is a waveform diagram showing the output potential VOUT of the conventional boost converter, wherein the horizontal axis represents time and the vertical axis represents the potential level. According to the measurement results in Fig. 3, conventional boost converters usually face the problem of start-up overshoot (ie, the initial oscillation waveform of the output potential VOUT), which tends to reduce the lifetime of the entire circuit.
第4圖係顯示根據本發明一實施例所述之升壓轉換器200之輸出電位VOUT之波形圖,其中橫軸代表時間,而縱軸代
表電位位準。根據第4圖之量測結果,藉由使用第一啟動電路250和第二啟動電路260,本發明之升壓轉換器200已幾乎可完全消除非理想之啟動過衝,故能大幅增加升壓轉換器200之可靠度和使用壽命。
FIG. 4 is a waveform diagram showing the output potential VOUT of the
在一些實施例中,升壓轉換器200之元件參數可如下列所述。第一電容器C1之電容值可介於1200μF至1800μF之間,較佳可為1500μF。第二電容器C2之電容值可介於90nF至110nF之間,較佳可為100nF。第三電容器C3之電容值可介於80nF至120nF之間,較佳可為100nF。升壓電感器LU之電感值可介於240μH至360μH之間,較佳可為300μH。第一電感器L1之電感值可介於0.9μH至1.1μH之間,較佳可為1μH。第二電感器L2之電感值可介於10μH至15μH之間,較佳可為12.5μH。第一電阻器R1之電阻值可介於65.45KΩ至88.55KΩ之間,較佳可為77KΩ。第二電阻器R2之電阻值可介於2.55KΩ至3.45KΩ之間,較佳可為3KΩ。第三電阻器R3之電阻值可介於0.85KΩ至1.15KΩ之間,較佳可為1KΩ。第四電阻器R4之電阻值可介於0.85KΩ至1.15KΩ之間,較佳可為1KΩ。當升壓轉換器200之溫度為攝氏25度時,正溫度係數電阻器RPTC之電阻值可約為100KΩ。當升壓轉換器200之溫度為攝氏85度時,正溫度係數電阻器RPTC之電阻值可約為10MΩ。第一線圈263對第二線圈264之匝數比值可介於1至10之間,較佳可約為4.5。第一線圈263對第三線圈265之匝數比值可介於1至10之間,較佳可約為4.5。齊納二極體DZ之逆向崩潰電壓可約為20V。以上參數範圍係根據多次實驗結果而得出,其有助於最大化升壓轉換器
200之可靠度和使用壽命。
In some embodiments, the component parameters of the
本發明提出一種新穎之升壓轉換器,其同時包括第一啟動電路和第二啟動電路,以分別提供電力給脈波寬度調變積體電路。根據實際量測結果,使用前述設計之升壓轉換器幾乎可完全消除非理想之啟動過衝,故其很適合應用於各種各式之裝置當中。 The present invention provides a novel boost converter, which simultaneously includes a first start-up circuit and a second start-up circuit to respectively provide power to the PWM integrated circuit. According to the actual measurement results, using the boost converter of the above design can almost completely eliminate the non-ideal start-up overshoot, so it is very suitable for use in various devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之升壓轉換器並不僅限於第1-4圖所圖示之狀態。本發明可以僅包括第1-4圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之升壓轉換器當中。 It should be noted that the potential, current, resistance value, inductance value, capacitance value and other component parameters mentioned above are not limitations of the present invention. Designers can adjust these settings according to different needs. The boost converter of the present invention is not limited to the states illustrated in FIGS. 1-4. The present invention may include only any one or more features of any one or more of the embodiments of Figures 1-4. In other words, not all of the features shown must be simultaneously implemented in the boost converter of the present invention.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention is disclosed above with preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.
100:升壓轉換器 100: Boost Converter
110:橋式整流器 110: Bridge Rectifier
120:功率切換器 120: Power switch
130:脈波寬度調變積體電路 130: Pulse width modulation integrated circuit
140:輸出級電路 140: Output stage circuit
150:第一啟動電路 150: First start circuit
160:第二啟動電路 160: Second start circuit
162:耦合線圈組 162: Coupling coil set
LU:升壓電感器 LU: boost inductor
RPTC:正溫度係數電阻器 RPTC: Positive Temperature Coefficient Resistor
VCC:供應電位 VCC: Supply potential
VIN1:第一輸入電位 VIN1: the first input potential
VIN2:第二輸入電位 VIN2: The second input potential
VM:脈波寬度調變電位 VM: PWM potential
VOUT:輸出電位 VOUT: output potential
VR:整流電位 VR: rectifier potential
VSS:接地電位 VSS: ground potential
Claims (10)
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TW200903966A (en) * | 2007-07-06 | 2009-01-16 | Advanced Analogic Tech Inc | Boost and up-down switching regulator with synchronous freewheeling MOSFET |
TW201034359A (en) * | 2009-03-13 | 2010-09-16 | Advanced Analog Technology Inc | Boost converter having two-step soft start mechanism |
TW201638698A (en) * | 2015-01-30 | 2016-11-01 | 惠普研發公司 | Voltage upconverter |
CN110212747A (en) * | 2019-05-29 | 2019-09-06 | 电子科技大学 | It is a kind of that control method is started without overshoot Boost based on dynamic peak value electric current |
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TW200903966A (en) * | 2007-07-06 | 2009-01-16 | Advanced Analogic Tech Inc | Boost and up-down switching regulator with synchronous freewheeling MOSFET |
TW201034359A (en) * | 2009-03-13 | 2010-09-16 | Advanced Analog Technology Inc | Boost converter having two-step soft start mechanism |
TW201638698A (en) * | 2015-01-30 | 2016-11-01 | 惠普研發公司 | Voltage upconverter |
CN110212747A (en) * | 2019-05-29 | 2019-09-06 | 电子科技大学 | It is a kind of that control method is started without overshoot Boost based on dynamic peak value electric current |
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