TWI759470B - 閘閥裝置及基板處理系統 - Google Patents

閘閥裝置及基板處理系統 Download PDF

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Publication number
TWI759470B
TWI759470B TW107114394A TW107114394A TWI759470B TW I759470 B TWI759470 B TW I759470B TW 107114394 A TW107114394 A TW 107114394A TW 107114394 A TW107114394 A TW 107114394A TW I759470 B TWI759470 B TW I759470B
Authority
TW
Taiwan
Prior art keywords
outlet
gate valve
opening
groove
valve device
Prior art date
Application number
TW107114394A
Other languages
English (en)
Chinese (zh)
Other versions
TW201901838A (zh
Inventor
大森貴史
鍋山裕樹
三枝直也
伊藤毅
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201901838A publication Critical patent/TW201901838A/zh
Application granted granted Critical
Publication of TWI759470B publication Critical patent/TWI759470B/zh

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
    • F16K3/30—Details
    • F16K3/314—Forms or constructions of slides; Attachment of the slide to the spindle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K27/00—Construction of housing; Use of materials therefor
    • F16K27/04—Construction of housing; Use of materials therefor of sliding valves
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
    • F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Valve Housings (AREA)
  • Details Of Valves (AREA)
  • Plasma Technology (AREA)
TW107114394A 2017-05-11 2018-04-27 閘閥裝置及基板處理系統 TWI759470B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017094612A JP6899697B2 (ja) 2017-05-11 2017-05-11 ゲートバルブ装置及び基板処理システム
JP2017-094612 2017-05-11

Publications (2)

Publication Number Publication Date
TW201901838A TW201901838A (zh) 2019-01-01
TWI759470B true TWI759470B (zh) 2022-04-01

Family

ID=64333639

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107114394A TWI759470B (zh) 2017-05-11 2018-04-27 閘閥裝置及基板處理系統

Country Status (4)

Country Link
JP (1) JP6899697B2 (ja)
KR (1) KR102100032B1 (ja)
CN (1) CN108878245B (ja)
TW (1) TWI759470B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326385B (zh) * 2018-12-13 2022-06-24 江苏鲁汶仪器有限公司 一种真空腔室

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05196150A (ja) * 1991-09-30 1993-08-06 Tokyo Electron Yamanashi Kk ゲートバルブ
TW200725702A (en) * 2005-10-31 2007-07-01 Tokyo Electron Ltd Gas supplying apparatus and substrate processing apparatus
JP2008507153A (ja) * 2004-07-19 2008-03-06 エーエスエム アメリカ インコーポレイテッド 処理ツール内のウエハハンドリングシステム
TW201236078A (en) * 2011-01-18 2012-09-01 Hitachi Int Electric Inc Substrate processing apparatus, substrate supporting tool and method of manufacturing semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3043848U (ja) 1997-05-28 1997-12-02 株式会社プレオ つけまつ毛ケース
JP3652688B2 (ja) * 2003-02-27 2005-05-25 株式会社旭精機 開閉装置
US7214274B2 (en) 2003-03-17 2007-05-08 Tokyo Electron Limited Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
JP2007273620A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd 基板搬送装置及び基板処理装置
JP2009230870A (ja) 2008-03-19 2009-10-08 Hitachi Plant Technologies Ltd 有機ｅｌパネル組立てシステム
JP5389684B2 (ja) * 2010-01-29 2014-01-15 東京エレクトロン株式会社 ゲートバルブ及びそれを用いた基板処理装置
JP6184832B2 (ja) * 2013-10-22 2017-08-23 東京エレクトロン株式会社 ゲートバルブ装置及びプラズマ処理装置
KR101604178B1 (ko) 2014-01-06 2016-03-16 가톨릭대학교 산학협력단 약물에 의한 간 손상의 예측 및 진단을 위한 바이오마커
JP6557523B2 (ja) * 2015-06-19 2019-08-07 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05196150A (ja) * 1991-09-30 1993-08-06 Tokyo Electron Yamanashi Kk ゲートバルブ
JP2008507153A (ja) * 2004-07-19 2008-03-06 エーエスエム アメリカ インコーポレイテッド 処理ツール内のウエハハンドリングシステム
TW200725702A (en) * 2005-10-31 2007-07-01 Tokyo Electron Ltd Gas supplying apparatus and substrate processing apparatus
TW201236078A (en) * 2011-01-18 2012-09-01 Hitachi Int Electric Inc Substrate processing apparatus, substrate supporting tool and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2018189218A (ja) 2018-11-29
TW201901838A (zh) 2019-01-01
CN108878245A (zh) 2018-11-23
KR102100032B1 (ko) 2020-04-10
CN108878245B (zh) 2020-06-09
JP6899697B2 (ja) 2021-07-07
KR20180124730A (ko) 2018-11-21

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