TWI758681B - 積體電路、記憶體及記憶體陣列 - Google Patents

積體電路、記憶體及記憶體陣列 Download PDF

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Publication number
TWI758681B
TWI758681B TW109102946A TW109102946A TWI758681B TW I758681 B TWI758681 B TW I758681B TW 109102946 A TW109102946 A TW 109102946A TW 109102946 A TW109102946 A TW 109102946A TW I758681 B TWI758681 B TW I758681B
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TW
Taiwan
Prior art keywords
well
type
cell
type well
region
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TW109102946A
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English (en)
Chinese (zh)
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TW202030866A (zh
Inventor
張峰銘
包家豪
洪連嶸
王屏薇
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台灣積體電路製造股份有限公司
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Priority claimed from US16/529,380 external-priority patent/US11127746B2/en
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202030866A publication Critical patent/TW202030866A/zh
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Publication of TWI758681B publication Critical patent/TWI758681B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221—Crossover interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
TW109102946A 2019-01-31 2020-01-31 積體電路、記憶體及記憶體陣列 TWI758681B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962799520P 2019-01-31 2019-01-31
US62/799,520 2019-01-31
US16/529,380 US11127746B2 (en) 2019-01-31 2019-08-01 Fin-based strap cell structure for improving memory performance
US16/529,380 2019-08-01

Publications (2)

Publication Number Publication Date
TW202030866A TW202030866A (zh) 2020-08-16
TWI758681B true TWI758681B (zh) 2022-03-21

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TW109102946A TWI758681B (zh) 2019-01-31 2020-01-31 積體電路、記憶體及記憶體陣列

Country Status (3)

Country Link
KR (1) KR102357523B1 (ko)
DE (1) DE102019121626A1 (ko)
TW (1) TWI758681B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950298B1 (en) 2020-01-17 2021-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Mixed threshold voltage memory array
US11488967B2 (en) * 2021-03-25 2022-11-01 Globalfoundries U.S. Inc. Eight-transistor static random access memory cell
US20230354573A1 (en) * 2022-04-28 2023-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Shared Pick-Up Regions for Memory Devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201606942A (zh) * 2014-07-24 2016-02-16 台灣積體電路製造股份有限公司 靜態隨機存取記憶體單元
TW201705375A (zh) * 2015-07-30 2017-02-01 台灣積體電路製造股份有限公司 記憶體陣列與雙埠靜態隨機存取記憶體陣列
TW201820320A (zh) * 2016-11-18 2018-06-01 台灣積體電路製造股份有限公司 包含三元內容可定址記憶體陣列的電子電路
TW201843810A (zh) * 2017-05-08 2018-12-16 聯華電子股份有限公司 記憶體裝置
US10157987B1 (en) * 2017-08-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-based strap cell structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201606942A (zh) * 2014-07-24 2016-02-16 台灣積體電路製造股份有限公司 靜態隨機存取記憶體單元
TW201705375A (zh) * 2015-07-30 2017-02-01 台灣積體電路製造股份有限公司 記憶體陣列與雙埠靜態隨機存取記憶體陣列
TW201820320A (zh) * 2016-11-18 2018-06-01 台灣積體電路製造股份有限公司 包含三元內容可定址記憶體陣列的電子電路
TW201843810A (zh) * 2017-05-08 2018-12-16 聯華電子股份有限公司 記憶體裝置
US10157987B1 (en) * 2017-08-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-based strap cell structure

Also Published As

Publication number Publication date
TW202030866A (zh) 2020-08-16
KR102357523B1 (ko) 2022-02-04
KR20200096093A (ko) 2020-08-11
DE102019121626A1 (de) 2020-08-06

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