TWI757521B - Wavelength conversion member and light-emitting device - Google Patents

Wavelength conversion member and light-emitting device Download PDF

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TWI757521B
TWI757521B TW107123659A TW107123659A TWI757521B TW I757521 B TWI757521 B TW I757521B TW 107123659 A TW107123659 A TW 107123659A TW 107123659 A TW107123659 A TW 107123659A TW I757521 B TWI757521 B TW I757521B
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light
wavelength conversion
conversion member
glass
emitting device
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TW201910287A (en
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清水寛之
浅野秀樹
高田嶺一
村田隆
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日商日本電氣硝子股份有限公司
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Abstract

本發明提供一種光提取效率高且發光強度優異之波長轉換構件、及使用其之發光裝置。 本發明之波長轉換構件之特徵在於:其係含有螢光體之板狀之波長轉換構件1,且 具有光入射面1a、及與光入射面1a為相反側之光出射面1b, 於將光入射面1a之表面粗糙度設為Rain ,將光出射面1b之表面粗糙度設為Raout 之情形時,Rain 為0.01~0.05 μm,且Raout -Rain 為0.01~0.2 μm。The present invention provides a wavelength conversion member with high light extraction efficiency and excellent luminous intensity, and a light-emitting device using the same. The wavelength conversion member of the present invention is characterized in that it is a plate-shaped wavelength conversion member 1 containing a phosphor, and has a light incident surface 1a and a light exit surface 1b on the opposite side of the light incident surface 1a, for converting light Ra in is 0.01-0.05 μm, and Ra out −Ra in is 0.01-0.2 μm when the surface roughness of the incident surface 1 a is Ra in and the surface roughness of the light exit surface 1 b is Ra out .

Description

波長轉換構件及發光裝置Wavelength conversion member and light-emitting device

本發明係關於一種將發光二極體(LED:Light Emitting Diode)或雷射二極體(LD:Laser Diode)等所發出之光之波長轉換為其他波長之波長轉換構件及使用其之發光裝置。The present invention relates to a wavelength conversion member for converting the wavelength of light emitted by a light emitting diode (LED: Light Emitting Diode) or a laser diode (LD: Laser Diode) into other wavelengths, and a light-emitting device using the same .

近年來,作為代替螢光燈或白熾燈之下一代光源,業界對使用LED或LD之發光裝置等之注目不斷提高。作為此種下一代光源之一例,揭示有將出射藍色光之LED與吸收來自LED之光之一部分並轉換為黃色光之波長轉換構件組合而成之發光裝置。該發光裝置發出自LED出射之藍色光與自波長轉換構件出射之黃色光之合成光、即白色光。專利文獻1中,作為波長轉換構件之一例,提出有於玻璃基質中分散有無機螢光體粉末之波長轉換構件。 [先前技術文獻] [專利文獻]In recent years, as a next-generation light source that replaces fluorescent lamps or incandescent lamps, the industry has been paying more and more attention to light-emitting devices using LEDs or LDs. As an example of such a next-generation light source, a light-emitting device is disclosed that combines an LED that emits blue light and a wavelength converting member that absorbs a part of the light from the LED and converts it into yellow light. The light-emitting device emits a composite light of blue light emitted from the LED and yellow light emitted from the wavelength conversion member, that is, white light. In Patent Document 1, as an example of the wavelength conversion member, a wavelength conversion member in which an inorganic phosphor powder is dispersed in a glass matrix is proposed. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2003-258308號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-258308

[發明所欲解決之問題][Problems to be Solved by Invention]

上述波長轉換構件存在光提取效率較差,無法獲得充分之發光強度之問題。The above-mentioned wavelength conversion member has a problem that the light extraction efficiency is poor and sufficient luminous intensity cannot be obtained.

因此,本發明之目的在於提出一種光提取效率較高且發光強度優異之波長轉換構件、及使用其之發光裝置。 [解決問題之技術手段]Therefore, an object of the present invention is to provide a wavelength conversion member with high light extraction efficiency and excellent luminous intensity, and a light-emitting device using the same. [Technical means to solve problems]

本發明者等進行努力研究,結果發現,藉由將波長轉換構件之光入射面與光出射面之表面粗糙度限制為特定範圍,可提高光提取效率,可獲得發光強度優異之波長轉換構件。The inventors of the present invention have made intensive studies and found that by limiting the surface roughness of the light incident surface and the light exit surface of the wavelength conversion member to a specific range, the light extraction efficiency can be improved, and a wavelength conversion member with excellent luminous intensity can be obtained.

即,本發明之波長轉換構件之特徵在於:其係含有螢光體之板狀之波長轉換構件,且具有光入射面、及與光入射面為相反側之光出射面,且於將光入射面之表面粗糙度設為Rain ,將光出射面之表面粗糙度設為Raout 之情形時,Rain 為0.01~0.05 μm,且Raout -Rain 為0.01~0.2 μm。That is, the wavelength conversion member of the present invention is characterized in that it is a plate-shaped wavelength conversion member including a phosphor, and has a light incident surface and a light exit surface on the opposite side of the light incident surface, and is characterized in that the light is incident on the light incident surface. When the surface roughness of the surface is Ra in and the surface roughness of the light exit surface is Ra out , Ra in is 0.01 to 0.05 μm, and Ra out −Ra in is 0.01 to 0.2 μm.

本發明之波長轉換構件較佳為光出射面之表面粗糙度Raout 為0.06 μm以上。如此,可進一步提高光提取效率。In the wavelength conversion member of the present invention, the surface roughness Ra out of the light exit surface is preferably 0.06 μm or more. In this way, the light extraction efficiency can be further improved.

本發明之波長轉換構件較佳為於玻璃基質中分散螢光體粉末而成。The wavelength conversion member of the present invention is preferably formed by dispersing phosphor powder in a glass matrix.

本發明之波長轉換構件較佳為厚度為0.01~1 mm。The wavelength conversion member of the present invention preferably has a thickness of 0.01 to 1 mm.

本發明之發光裝置之特徵在於具備:上述波長轉換構件、及對波長轉換構件照射激發光之發光元件。The light-emitting device of the present invention is characterized by including the wavelength conversion member described above, and a light-emitting element for irradiating excitation light to the wavelength conversion member.

本發明之發光裝置較佳為波長轉換構件之光入射面與發光元件藉由接著劑層而接著。In the light-emitting device of the present invention, the light-incidence surface of the wavelength conversion member and the light-emitting element are preferably bonded by an adhesive layer.

本發明之發光裝置較佳為於波長轉換構件與發光元件之周圍配置有反射層。 [發明之效果]In the light-emitting device of the present invention, a reflection layer is preferably disposed around the wavelength conversion member and the light-emitting element. [Effect of invention]

根據本發明,可提出一種光提取效率較高且發光強度優異之波長轉換構件、及使用其之發光裝置。According to the present invention, a wavelength conversion member having high light extraction efficiency and excellent luminous intensity, and a light emitting device using the same can be provided.

以下,對較佳之實施形態進行說明。但是,以下之實施形態僅為例示,本發明並不限定於以下之實施形態。又,各圖式中,有時將實質上具有相同功能之構件以相同之符號進行參照。Hereinafter, preferred embodiments will be described. However, the following embodiments are merely examples, and the present invention is not limited to the following embodiments. In addition, in each drawing, the member which has substantially the same function may be referred to by the same code|symbol.

圖1係表示本發明之一實施形態之波長轉換構件之模式性剖視圖。波長轉換構件1例如為矩形之板狀。波長轉換構件1含有螢光體,且具有光入射面1a、及與光入射面1a為相反側之光出射面1b。使用以激發波長轉換構件1所含有之螢光體之激發光作為入射光Lin 自波長轉換構件1之光入射面1a入射。入射光Lin 藉由螢光體進行波長轉換而成為螢光。該螢光與未經波長轉換之入射光Lin 之合成光作為出射光Lout 自光出射面1b出射。例如,於入射光Lin 為藍色光且螢光為黃色光之情形時,藍色光與黃色光之合成光即白色光作為Lout 出射。FIG. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention. The wavelength conversion member 1 has a rectangular plate shape, for example. The wavelength conversion member 1 includes a phosphor, and has a light incident surface 1a and a light exit surface 1b on the opposite side of the light incident surface 1a. The excitation light that excites the phosphor contained in the wavelength conversion member 1 is used as the incident light L in from the light incident surface 1 a of the wavelength conversion member 1 . The incident light L in is converted into fluorescent light by wavelength conversion by a phosphor. The combined light of the fluorescent light and the incident light L in without wavelength conversion is emitted from the light emitting surface 1b as outgoing light L out . For example, when the incident light L in is blue light and the fluorescent light is yellow light, white light, which is a composite light of blue light and yellow light, is emitted as L out .

於將波長轉換構件1之光入射面1a之表面粗糙度設為Rain ,將光出射面1b之表面粗糙度設為Raout 之情形時,Rain 滿足0.01~0.05 μm,且Raout -Rain 滿足0.01~0.2 μm。藉此,能夠提高光提取效率。其理由推測為如下。藉由使光入射面1a之表面粗糙度Rain 相對較小,入射光Lin 不易於光入射面1a表面發生散射,入射至波長轉換構件1內部之入射效率提高。認為其原因在於:通常,入射光Lin 係自LED或LD發出之光,故而直進性(配向性)較高,相對於光入射面1a垂直方向之光之比率較大。另一方面,藉由使光出射面1b之表面粗糙度Raout 相對大於Rain ,可提高出射光Lout 之光提取效率。波長轉換構件1由於基本上為光散射體,故而入射光Lin 或螢光於波長轉換構件1之內部發生散射,於所有方向上配向。因此,若光出射面1b之表面粗糙度Raout 較小,則有超過臨界角之光成分增多,導致光提取效率降低之傾向。因此,藉由使光出射面1b之表面粗糙度Raout 變大,可提高對散射光之光反射抑制效果。In the case where the surface roughness of the light incident surface 1a of the wavelength conversion member 1 is Ra in and the surface roughness of the light exit surface 1b is Ra out , Ra in satisfies 0.01 to 0.05 μm, and Ra out −Ra in satisfies 0.01 to 0.2 μm. Thereby, the light extraction efficiency can be improved. The reason for this is presumed as follows. By making the surface roughness Ra in of the light incident surface 1a relatively small, the incident light Lin is less likely to be scattered on the surface of the light incident surface 1a, and the incidence efficiency into the wavelength conversion member 1 is improved. The reason for this is considered to be that the incident light Lin is generally light emitted from LEDs or LDs, and therefore has high straightness (alignment) and a large ratio to light in the vertical direction to the light incident surface 1a. On the other hand, by making the surface roughness Ra out of the light exit surface 1b relatively larger than Ra in , the light extraction efficiency of the outgoing light L out can be improved. Since the wavelength conversion member 1 is basically a light scatterer, incident light L in or fluorescent light is scattered inside the wavelength conversion member 1 and aligned in all directions. Therefore, if the surface roughness Ra out of the light exit surface 1b is small, the light component exceeding the critical angle increases, and the light extraction efficiency tends to decrease. Therefore, by increasing the surface roughness Ra out of the light exit surface 1b, the effect of suppressing light reflection with respect to scattered light can be enhanced.

若Rain 過大,則有入射光Lin 於光入射面1a表面發生散射,入射至長轉換構件1內部之入射效率降低之傾向。結果波長轉換構件之光提取效率降低,發光強度容易降低。另一方面,若Rain 過小,則與發光元件(下述)接著時不易獲得投錨效應,導致接著強度容易降低。再者,若因接著強度降低,而波長轉換構件1自發光元件有一部分剝離,則於波長轉換構件1與發光元件之間形成折射率較低之空氣層,故而有入射光Lin 之入射效率顯著降低之傾向。Rain 之較佳範圍為0.015~0.045 μm。If Ra in is too large, the incident light Lin is scattered on the surface of the light incident surface 1a, and the incidence efficiency into the inside of the long conversion member 1 tends to decrease. As a result, the light extraction efficiency of the wavelength conversion member decreases, and the luminous intensity tends to decrease. On the other hand, if Ra in is too small, the anchoring effect is not easily obtained when bonding with a light-emitting element (described below), and the bonding strength tends to decrease. Furthermore, if the wavelength conversion member 1 is partially peeled off from the light-emitting element due to the decrease in the adhesion strength, an air layer with a low refractive index is formed between the wavelength conversion member 1 and the light-emitting element, so that the incidence efficiency of the incident light Lin increases. Tendency to decrease significantly. The preferred range of Ra in is 0.015-0.045 μm.

若Raout -Rain 過小,則出射光Lout 容易於光出射面1b發生反射,導致光提取效率容易降低。另一方面,若Raout -Rain 過大,則出射光Lout 於光出射面1b之散射變大,反而導致光提取效率容易降低。Raout -Rain 之較佳範圍為0.02~0.18 μm,更佳之範圍為0.05~0.17 μm。If Ra out −Ra in is too small, the outgoing light L out is likely to be reflected on the light outgoing surface 1 b, and the light extraction efficiency is likely to decrease. On the other hand, if Ra out −Ra in is too large, the scattering of the outgoing light L out on the light outgoing surface 1 b increases, and on the contrary, the light extraction efficiency tends to decrease. The preferable range of Ra out -Ra in is 0.02-0.18 μm, and the more preferable range is 0.05-0.17 μm.

再者,Raout 較佳為0.06 μm以上、0.07 μm以上、尤其是0.08 μm以上,且較佳為0.25 μm以下、0.23 μm以下、尤其是0.22 μm以下。若Raout 過小,則出射光Lout 容易於光出射面1b發生反射,導致光提取效率容易降低。另一方面,若Raout 過大,則出射光Lout 於光出射面1b之散射變大,導致光提取效率容易降低。Furthermore, Ra out is preferably 0.06 μm or more, 0.07 μm or more, especially 0.08 μm or more, and preferably 0.25 μm or less, 0.23 μm or less, especially 0.22 μm or less. If Ra out is too small, the outgoing light L out is likely to be reflected on the light outgoing surface 1b, and the light extraction efficiency is likely to decrease. On the other hand, if Ra out is too large, the scattering of the outgoing light L out on the light outgoing surface 1b increases, and the light extraction efficiency tends to decrease.

波長轉換構件1例如包含含有玻璃基質、及分散於該玻璃基質中之螢光體粉末的螢光體玻璃。The wavelength conversion member 1 includes, for example, a phosphor glass containing a glass matrix and phosphor powder dispersed in the glass matrix.

玻璃基質只要為可用作無機螢光體等螢光體粉末之分散介質者即可,並無特別限定。例如可使用硼矽酸鹽系玻璃、磷酸鹽系玻璃、錫磷酸鹽系玻璃、鉍酸鹽系玻璃、亞碲酸鹽系玻璃等。作為硼矽酸鹽系玻璃,可列舉:以質量%計含有SiO2 30~85%、Al2 O3 0~30%、B2 O3 0~50%、Li2 O+Na2 O+K2 O 0~10%、及MgO+CaO+SrO+BaO 0~50%者。作為錫磷酸鹽系玻璃,可列舉:以莫耳%計含有SnO 30~90%、P2 O5 1~70%者。作為亞碲酸鹽系玻璃,可列舉:以莫耳%計含有TeO2 50%以上、ZnO 0~45%、RO(R係選自Ca、Sr及Ba中之至少1種)0~50%、及La2 O3 +Gd2 O3 +Y2 O3 0~50%者。The glass matrix is not particularly limited as long as it can be used as a dispersion medium for phosphor powders such as inorganic phosphors. For example, borosilicate-based glass, phosphate-based glass, tin-phosphate-based glass, bismuth-based glass, tellurite-based glass, and the like can be used. Examples of borosilicate glass include 30 to 85% by mass of SiO 2 , 0 to 30% of Al 2 O 3 , 0 to 50% of B 2 O 3 , and Li 2 O+Na 2 O+K 2 O 0 to 0% by mass. 10%, and MgO+CaO+SrO+BaO 0-50%. As a tin phosphate type glass, what contains SnO 30-90% and P2O5 1-70 % in molar % is mentioned. As the tellurite glass, 50% or more of TeO 2 , 0 to 45% of ZnO, and 0 to 50% of RO (R is at least one selected from Ca, Sr, and Ba) are included in mol %. , and La 2 O 3 +Gd 2 O 3 +Y 2 O 3 0 to 50%.

玻璃基質之軟化點較佳為250℃~1000℃,更佳為300℃~950℃,進而較佳為500℃~900℃之範圍內。若玻璃基質之軟化點過低,則存在波長轉換構件1之機械強度或化學耐久性降低之情形。又,由於玻璃基質自身之耐熱性較低,故而有因自螢光體產生之熱導致軟化變形之虞。另一方面,若玻璃基質之軟化點過高,則存在製造時包括焙燒步驟之情形,及螢光體劣化導致波長轉換構件1之發光強度降低之情形。又,若玻璃基質之軟化點變高,則有焙燒溫度亦升高,結果製造成本變高之傾向。再者,就提高波長轉換構件1之化學穩定性及機械強度之觀點而言,玻璃基質之軟化點較佳為500℃以上、600℃以上、700℃以上、800℃以上、尤其是850℃以上。作為此種玻璃,可列舉硼矽酸鹽系玻璃。另一方面,就低價地製造波長轉換構件1之觀點而言,玻璃基質之軟化點較佳為550℃以下、530℃以下、500℃以下、480℃以下、尤其是460℃以下。作為此種玻璃,可列舉錫磷酸鹽系玻璃、鉍酸鹽系玻璃、亞碲酸鹽系玻璃。The softening point of the glass matrix is preferably within the range of 250°C to 1000°C, more preferably 300°C to 950°C, and still more preferably 500°C to 900°C. If the softening point of the glass matrix is too low, there is a case where the mechanical strength or chemical durability of the wavelength conversion member 1 is lowered. In addition, since the heat resistance of the glass substrate itself is low, there is a possibility of softening and deformation due to heat generated from the phosphor. On the other hand, if the softening point of the glass matrix is too high, there is a case where a firing step is included in the manufacture, and there is a case where the luminous intensity of the wavelength conversion member 1 is lowered due to the deterioration of the phosphor. Moreover, when the softening point of a glass matrix becomes high, the baking temperature also becomes high, and there exists a tendency for manufacturing cost to become high as a result. Furthermore, from the viewpoint of improving the chemical stability and mechanical strength of the wavelength conversion member 1, the softening point of the glass matrix is preferably 500°C or higher, 600°C or higher, 700°C or higher, 800°C or higher, particularly 850°C or higher. . As such glass, borosilicate glass is mentioned. On the other hand, the softening point of the glass matrix is preferably 550°C or lower, 530°C or lower, 500°C or lower, 480°C or lower, particularly 460°C or lower, from the viewpoint of inexpensively producing the wavelength conversion member 1 . Examples of such glass include tin phosphate-based glass, bismuthate-based glass, and tellurite-based glass.

螢光體只要為藉由激發光之入射而出射螢光者,則並無特別限定。作為螢光體之具體例,例如可列舉:選自氧化物螢光體、氮化物螢光體、氮氧化物螢光體、氯化物螢光體、氧氯化物螢光體、硫化物螢光體、氧硫化物螢光體、鹵化物螢光體、硫屬化物螢光體、鋁酸鹽螢光體、鹵磷酸氯化物螢光體及石榴石系化合物螢光體中之1種以上等。於使用藍色光作為激發光之情形時,例如可使用以螢光之形式出射綠色光、黃色光或紅色光之螢光體。The fluorescent substance is not particularly limited as long as it emits fluorescent light upon incidence of excitation light. Specific examples of the phosphors include, for example, oxide phosphors, nitride phosphors, oxynitride phosphors, chloride phosphors, oxychloride phosphors, and sulfide phosphors. One or more of phosphors, oxysulfide phosphors, halide phosphors, chalcogenide phosphors, aluminate phosphors, halophosphoric acid chloride phosphors, and garnet-based compound phosphors, etc. . When blue light is used as the excitation light, for example, a phosphor that emits green light, yellow light, or red light in the form of fluorescent light can be used.

螢光體粉末之平均粒徑較佳為1 μm~50 μm,更佳為5 μm~25 μm。若螢光體粉末之平均粒徑過小,則存在發光強度降低之情形。另一方面,若螢光體粉末之平均粒徑過大,則存在發光顏色變得不均勻之情形。The average particle size of the phosphor powder is preferably 1 μm to 50 μm, more preferably 5 μm to 25 μm. When the average particle size of the phosphor powder is too small, the luminous intensity may decrease. On the other hand, if the average particle size of the phosphor powder is too large, the emission color may become uneven.

波長轉換構件1中之螢光體粉末之含量較佳為1體積%以上、1.5體積%以上、尤其是2體積%,且較佳為70體積%以下、50體積%以下、30體積%以下。若螢光體粉末之含量過少,則為了獲得所需之發光顏色,必須使波長轉換構件1之厚度較厚,其結果存在因波長轉換構件1之內部散射增加,導致光提取效率減低之情形。另一方面,若螢光體粉末之含量過多,則為了獲得所需之發光顏色,必須使波長轉換構件1之厚度較薄,因此存在波長轉換構件1之機械強度降低之情形。The content of the phosphor powder in the wavelength conversion member 1 is preferably 1 vol% or more, 1.5 vol% or more, especially 2 vol%, and preferably 70 vol% or less, 50 vol% or less, and 30 vol% or less. If the content of the phosphor powder is too small, the thickness of the wavelength conversion member 1 must be thick in order to obtain the desired luminescent color. As a result, the internal scattering of the wavelength conversion member 1 may increase, resulting in a decrease in light extraction efficiency. On the other hand, if the content of the phosphor powder is too large, the thickness of the wavelength conversion member 1 must be made thin in order to obtain a desired luminescent color, and thus the mechanical strength of the wavelength conversion member 1 may decrease.

波長轉換構件1之厚度較佳為0.01 mm以上、0.03 mm以上、0.05 mm以上、0.075 mm以上、尤其是0.08 mm以上,且較佳為1 mm以下、0.5 mm以下、0.35 mm以下、0.3 mm以下、0.25 mm以下、0.15 mm以下、尤其是0.12 mm以下。若波長轉換構件1之厚度過厚,則存在波長轉換構件1中之光之散射或吸收變得過大,導致光提取效率降低之情形。若波長轉換構件1之厚度過薄,則存在難以獲得充分之發光強度之情形。又,存在波長轉換構件1之機械強度變得不充分之情形。The thickness of the wavelength conversion member 1 is preferably 0.01 mm or more, 0.03 mm or more, 0.05 mm or more, 0.075 mm or more, especially 0.08 mm or more, and preferably 1 mm or less, 0.5 mm or less, 0.35 mm or less, 0.3 mm or less , 0.25 mm or less, 0.15 mm or less, especially 0.12 mm or less. If the thickness of the wavelength conversion member 1 is too thick, scattering or absorption of light in the wavelength conversion member 1 may become too large, resulting in a decrease in light extraction efficiency. If the thickness of the wavelength conversion member 1 is too thin, it may be difficult to obtain sufficient luminous intensity. Moreover, the mechanical strength of the wavelength conversion member 1 may become insufficient.

波長轉換構件1之折射率(nd)較佳為1.40以上、1.45以上、1.50以上,且較佳為1.90以下、1.80以下、1.70以下。若波長轉換構件1之折射率過高,則存在因波長轉換構件1與光出射側之介質(例如空氣層(nd=1.0))之折射率差變大,而容易產生於光出射面1b之全反射,導致光提取效率降低之情形。若波長轉換構件1之折射率過低,則與發光元件(例如覆晶安裝型LED。出射面為藍寶石 nd=1.76)之折射率差變大。因此,即便於波長轉換構件1與發光元件之間設置有接著劑層並由該接著劑層調整過折射率差之情形時,存在發光元件與接著劑層之折射率差及/或接著劑層與波長轉換構件1之折射率差會變大,於各界面之光提取效率降低之情形。The refractive index (nd) of the wavelength conversion member 1 is preferably 1.40 or more, 1.45 or more, and 1.50 or more, and more preferably 1.90 or less, 1.80 or less, and 1.70 or less. If the refractive index of the wavelength conversion member 1 is too high, the difference in refractive index between the wavelength conversion member 1 and the medium on the light exit side (for example, the air layer (nd=1.0)) becomes large, which is likely to occur on the light exit surface 1b. Total reflection, resulting in a situation where the light extraction efficiency is reduced. If the refractive index of the wavelength conversion member 1 is too low, the difference in refractive index with a light-emitting element (for example, a flip-chip LED. The output surface is sapphire, nd=1.76) becomes large. Therefore, even when an adhesive layer is provided between the wavelength conversion member 1 and the light-emitting element and the difference in refractive index is adjusted by the adhesive layer, there is a difference in refractive index between the light-emitting element and the adhesive layer and/or the adhesive layer. The difference in refractive index with the wavelength conversion member 1 increases, and the light extraction efficiency at each interface decreases.

於波長轉換構件1之光出射面1b亦可設置抗反射膜。如此,於自光出射面1b出射螢光或激發光時,可抑制因波長轉換構件1與空氣之折射率差引起之光提取效率之降低。作為抗反射膜,可列舉包含SiO2 、Al2 O3 、TiO2 、Nb2 O5 、Ta2 O5 等之單層或多層之介電膜。An anti-reflection film may also be provided on the light exit surface 1 b of the wavelength conversion member 1 . In this way, when fluorescent light or excitation light is emitted from the light exit surface 1b, the reduction of the light extraction efficiency caused by the difference in refractive index between the wavelength conversion member 1 and the air can be suppressed. As the antireflection film, a single-layer or multi-layer dielectric film including SiO 2 , Al 2 O 3 , TiO 2 , Nb 2 O 5 , Ta 2 O 5 and the like can be exemplified.

於波長轉換構件1之光入射面1a亦可設置抗反射膜。如此,於激發光入射至波長轉換構件1時,可抑制因接著劑層與波長轉換構件1之折射率差引起之激發光入射效率之降低。An anti-reflection film may also be provided on the light incident surface 1 a of the wavelength conversion member 1 . In this way, when excitation light is incident on the wavelength conversion member 1 , the reduction in the excitation light incidence efficiency due to the difference in refractive index between the adhesive layer and the wavelength conversion member 1 can be suppressed.

再者,於波長轉換構件1包含螢光體玻璃之情形時,通常考慮波長轉換構件1中之玻璃基質之折射率而設計抗反射膜。此處,若於波長轉換構件1之光出射面1b顯露螢光體粉末,則由於螢光體粉末之折射率相對較高,故而有形成於螢光體粉末部分之抗反射膜未成為適當之膜設計,無法獲得充分之抗反射功能之虞。因此,較佳為於波長轉換構件1之光出射面1b以被覆所露出之螢光體粉末之方式設置玻璃層(不含螢光體粉末之玻璃層)。如此,波長轉換構件1之光出射面1b之折射率變得均勻,可提高由抗反射膜所獲得之效果。再者,較佳為於波長轉換構件1之光入射面1a亦如上述般設置用以提高抗反射效果之玻璃層。Furthermore, when the wavelength conversion member 1 includes fluorescent glass, the antireflection film is usually designed in consideration of the refractive index of the glass matrix in the wavelength conversion member 1 . Here, if the phosphor powder is exposed on the light exit surface 1b of the wavelength conversion member 1, since the refractive index of the phosphor powder is relatively high, the anti-reflection film formed on the phosphor powder portion is not suitable. Due to the film design, there is a risk that a sufficient anti-reflection function cannot be obtained. Therefore, it is preferable to provide a glass layer (a glass layer not containing phosphor powder) on the light exit surface 1b of the wavelength conversion member 1 so as to cover the exposed phosphor powder. In this way, the refractive index of the light exit surface 1b of the wavelength conversion member 1 becomes uniform, and the effect obtained by the antireflection film can be enhanced. Furthermore, it is preferable that the glass layer for enhancing the anti-reflection effect is also provided on the light incident surface 1a of the wavelength conversion member 1 as described above.

構成玻璃層之玻璃較佳為與構成長轉換構件1中之玻璃基質之玻璃相同。如此,波長轉換構件1中之玻璃基質與玻璃層之折射率差消失,可抑制於兩界面處之光反射損失。再者,於設置玻璃層之情形時,較佳為玻璃層表面之表面粗糙度滿足上述表面粗糙度Raout 之範圍。玻璃層之厚度較佳為0.003~0.1 mm、0.005~0.03 mm、尤其是0.01~0.02 mm。若玻璃層之厚度過小,則有無法充分地被覆露出之螢光體粉末之虞。另一方面,若玻璃層之厚度過大,則有激發光或螢光被吸收,導致發光效率降低之虞。The glass that constitutes the glass layer is preferably the same glass that constitutes the glass matrix in the elongated conversion member 1 . In this way, the difference in refractive index between the glass matrix and the glass layer in the wavelength conversion member 1 disappears, and light reflection loss at the two interfaces can be suppressed. Furthermore, when the glass layer is provided, it is preferable that the surface roughness of the surface of the glass layer satisfies the range of the above-mentioned surface roughness Ra out . The thickness of the glass layer is preferably 0.003-0.1 mm, 0.005-0.03 mm, especially 0.01-0.02 mm. If the thickness of the glass layer is too small, there is a possibility that the exposed phosphor powder cannot be sufficiently covered. On the other hand, if the thickness of the glass layer is too large, excitation light or fluorescent light may be absorbed, resulting in a decrease in luminous efficiency.

再者,波長轉換構件1除了為包含螢光體玻璃者以外,亦可為包含YAG(Yttrium Aluminum Garnet,釔鋁石榴石)陶瓷等陶瓷者、或樹脂中分散有螢光體粉末者。Furthermore, the wavelength conversion member 1 may be made of not only phosphor glass, but also ceramics such as YAG (Yttrium Aluminum Garnet) ceramics, or phosphor powder dispersed in resin.

波長轉換構件1可以如下方式進行製作。首先,製作板狀之波長轉換構件前驅體。波長轉換構件前驅體例如可藉由切削螢光體粉末與玻璃粉末之混合物之燒結體而製作。其次,對波長轉換構件前驅體之兩主面、即光入射面及光出射面以成為所需之表面粗糙度之方式進行研磨,藉此獲得波長轉換構件1。此處,藉由適當地選擇研磨墊或研磨粒,而調整波長轉換構件1之兩主面之表面粗糙度。可對波長轉換構件前驅體之兩主面同時進行研磨,亦可逐個面地依序進行研磨(研磨光入射面後對光出射面進行研磨、或者研磨光出射面後對光入射面進行研磨)。例如可列舉:於利用雙面研磨機對波長轉換構件1之兩面實施粗研磨後,利用單面研磨機對光入射面進行研磨之方法;或利用單面研磨機,使用不同研磨粒對波長轉換構件1之光入射面與光出射面逐個面地依序進行研磨之方法。The wavelength conversion member 1 can be produced as follows. First, a plate-shaped wavelength conversion member precursor is produced. The wavelength conversion member precursor can be produced, for example, by cutting a sintered body of a mixture of phosphor powder and glass powder. Next, the wavelength conversion member 1 is obtained by polishing the two principal surfaces of the wavelength conversion member precursor, that is, the light incident surface and the light output surface so as to obtain a desired surface roughness. Here, the surface roughness of the both main surfaces of the wavelength conversion member 1 is adjusted by appropriately selecting the polishing pad or the abrasive grains. The two main surfaces of the precursor of the wavelength conversion member can be polished at the same time, or they can be polished one by one in sequence (polishing the light incident surface and then polishing the light exit surface, or polishing the light exit surface and then polishing the light incident surface) . For example, a method of grinding the light incident surface with a single-side grinder after rough grinding of both sides of the wavelength conversion member 1 with a double-side grinder; or a method of using a single-side grinder to convert wavelengths with different abrasive The method of polishing the light incident surface and the light exit surface of the member 1 in sequence one by one.

圖2係表示本發明之一實施形態之發光裝置之模式性剖視圖。發光裝置10係將波長轉換構件1與發光元件2藉由接著劑層3接著而成者。於本實施形態中,發光元件2設置於基板4上。又,於波長轉換構件1、發光元件2、及接著劑層3之周圍配置有反射層5。藉由配置反射層5,可抑制將激發光及螢光反射而漏至外部,可提高光之提取效率。發光元件2於俯視下與波長轉換構件1為大致相同形狀、相同面積。但是,波長轉換構件1與發光元件2之形狀及面積亦可不同。例如,對並列設置之複數個發光元件2以覆蓋該複數個發光元件2之方式接著1片波長轉換構件1。FIG. 2 is a schematic cross-sectional view showing a light-emitting device according to an embodiment of the present invention. The light-emitting device 10 is formed by bonding the wavelength conversion member 1 and the light-emitting element 2 with the adhesive layer 3 . In this embodiment, the light-emitting element 2 is provided on the substrate 4 . Moreover, the reflection layer 5 is arrange|positioned around the wavelength conversion member 1, the light emitting element 2, and the adhesive agent layer 3. By disposing the reflective layer 5, the excitation light and the fluorescent light can be suppressed from being reflected and leaked to the outside, and the light extraction efficiency can be improved. The light-emitting element 2 has substantially the same shape and area as the wavelength conversion member 1 in plan view. However, the wavelength conversion member 1 and the light emitting element 2 may have different shapes and areas. For example, one wavelength conversion member 1 is attached to a plurality of light-emitting elements 2 arranged in parallel so as to cover the plurality of light-emitting elements 2 .

作為發光元件2,例如可使用發出藍色光之LED光源或LD光源等光源。作為構成接著劑層3之接著劑,例如可列舉矽酮樹脂系、環氧樹脂系、乙烯系樹脂系、丙烯酸系樹脂系等。構成接著劑層3之接著劑較佳為與波長轉換構件1之折射率相近之折射率。如此,可使自發光元件2發出之激發光效率良好地入射至波長轉換構件1。作為基板4,例如可使用能夠使自發光元件2發出之光線效率良好地反射之白色LTCC(Low Temperature Co-fired Ceramics,低溫共燒陶瓷)等。具體而言,可列舉氧化鋁、氧化鈦、氧化鈮等無機粉末與玻璃粉末之燒結體。或者可使用氧化鋁或氮化鋁等陶瓷基板。作為反射層5,可使用樹脂組合物或玻璃陶瓷。作為樹脂組合物,可使用樹脂與陶瓷粉末或玻璃粉末之混合物。作為玻璃陶瓷,可列舉LTCC等。作為玻璃陶瓷之材料,可使用玻璃粉末及陶瓷粉末之混合粉末、或結晶性玻璃粉末。 [實施例]As the light-emitting element 2, for example, a light source such as an LED light source or an LD light source that emits blue light can be used. As an adhesive agent which comprises the adhesive agent layer 3, a silicone resin type, an epoxy resin type, a vinyl type resin type, an acrylic resin type, etc. are mentioned, for example. The adhesive constituting the adhesive layer 3 preferably has a refractive index close to that of the wavelength conversion member 1 . In this way, the excitation light emitted from the light-emitting element 2 can be efficiently incident on the wavelength conversion member 1 . As the substrate 4 , for example, white LTCC (Low Temperature Co-fired Ceramics) that can efficiently reflect the light emitted from the light-emitting element 2 can be used. Specifically, sintered bodies of inorganic powders such as alumina, titania, and niobium oxide and glass powders can be mentioned. Alternatively, a ceramic substrate such as alumina or aluminum nitride may be used. As the reflection layer 5, a resin composition or glass ceramics can be used. As the resin composition, a mixture of resin and ceramic powder or glass powder can be used. As glass ceramics, LTCC etc. are mentioned. As the material of the glass ceramics, a mixed powder of glass powder and ceramic powder, or a crystalline glass powder can be used. [Example]

以下,對本發明之波長轉換構件藉由實施例詳細地進行說明,但本發明並不限定於以下之實施例。Hereinafter, the wavelength conversion member of the present invention will be described in detail by way of examples, but the present invention is not limited to the following examples.

表1表示實施例1、2及比較例1~3。Table 1 shows Examples 1 and 2 and Comparative Examples 1 to 3.

[表1]

Figure 107123659-A0304-0001
[Table 1]
Figure 107123659-A0304-0001

於硼矽酸鹽系玻璃粉末(平均粒徑D50 :2 μm,軟化點850℃)中混合YAG螢光體粉末(平均粒徑D50 :15 μm)而獲得混合粉末。YAG螢光體粉末之含量於混合粉末中設為8.3體積%。將混合粉末利用模具進行加壓成型,於軟化點附近進行焙燒,藉此獲得燒結體。藉由對所獲得之燒結體進行切削,而獲得30 mm×30 mm×0.3 mm之板狀之波長轉換構件前驅體。使用單面研磨機,以使光入射面及光出射面成為各特定之表面粗糙度之方式逐個面地改變研磨粒對波長轉換構件前驅體進行研磨,藉此製作波長轉換構件。將所獲得之波長轉換構件切割為外形尺寸1 mm×1 mm,而獲得小片之波長轉換構件。YAG phosphor powder (average particle size D 50 : 15 μm) was mixed with borosilicate glass powder (average particle size D 50 : 2 μm, softening point 850° C.) to obtain a mixed powder. The content of the YAG phosphor powder in the mixed powder was set to 8.3% by volume. A sintered body is obtained by press-molding the mixed powder with a mold, and calcining in the vicinity of the softening point. By cutting the obtained sintered body, a wavelength conversion member precursor having a plate shape of 30 mm×30 mm×0.3 mm was obtained. Using a single-sided grinder, the wavelength conversion member precursor was polished by changing abrasive grains surface by surface so that the light incident surface and the light exit surface had specific surface roughnesses, thereby producing a wavelength conversion member. The obtained wavelength conversion member was cut into an outer dimension of 1 mm×1 mm to obtain a small piece of wavelength conversion member.

對所獲得之小片之波長轉換構件以如下方式測定光束值。於激發波長450 nm之LED晶片表面塗佈矽酮樹脂,而接著小片之波長轉換構件,於LED晶片及小片之波長轉換構件之外周部塗佈高反射性之矽酮樹脂,獲得測定用試樣。將自小片之波長轉換構件之光出射面發出之光擷取至積分球內部,其後將光導入至經標準光源校正之分光器,測定光之能量分佈圖譜。根據所獲得之能量分佈圖譜算出光束值。再者,表1之光束值係以將實施例1之光束值設為1之相對值表示。The beam value was measured for the wavelength converting member of the obtained platelet in the following manner. The surface of the LED chip with an excitation wavelength of 450 nm is coated with a silicone resin, followed by the wavelength conversion member of the small chip, and the outer periphery of the LED chip and the wavelength conversion member of the small chip is coated with a highly reflective silicone resin to obtain a sample for measurement. . The light emitted from the light exit surface of the wavelength conversion member of the chip is captured into the interior of the integrating sphere, and then the light is introduced into a beam splitter calibrated by a standard light source to measure the energy distribution pattern of the light. The beam value is calculated from the obtained energy distribution pattern. In addition, the beam value of Table 1 is represented by the relative value which set the beam value of Example 1 as 1.

如表1所示,實施例1、2之波長轉換構件之相對光束值為0.99以上,相對於此,比較例1~3之波長轉換構件之相對光束值較差,為0.95以下。As shown in Table 1, the relative beam values of the wavelength conversion members of Examples 1 and 2 were 0.99 or more, while the relative beam values of the wavelength conversion members of Comparative Examples 1 to 3 were inferior to 0.95 or less.

1‧‧‧波長轉換構件1a‧‧‧光入射面1b‧‧‧光出射面2‧‧‧發光元件3‧‧‧接著劑層4‧‧‧基板5‧‧‧反射層10‧‧‧發光裝置1‧‧‧Wavelength converting member 1a‧‧‧Light incident surface 1b‧‧‧Light exit surface 2‧‧‧Light-emitting element 3‧‧‧Adhesive layer 4‧‧‧Substrate 5‧‧‧Reflecting layer 10‧‧‧Light device

圖1係表示本發明之一實施形態之波長轉換構件之模式性剖視圖。 圖2係表示本發明之一實施形態之發光裝置之模式性剖視圖。FIG. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a light-emitting device according to an embodiment of the present invention.

Claims (8)

一種波長轉換構件,其特徵在於:其係含有螢光體之板狀之波長轉換構件,且具有光入射面、及與上述光入射面為相反側之光出射面,於將上述光入射面之表面粗糙度設為Rain,將上述光出射面之表面粗糙度設為Raout之情形時,Rain為0.01~0.05μm,且Raout-Rain為0.01~0.2μm。 A wavelength conversion member is characterized in that: it is a plate-shaped wavelength conversion member containing a phosphor, and has a light incident surface and a light exit surface opposite to the light incident surface, wherein the light incident surface is When the surface roughness is set to Ra in and the surface roughness of the light exit surface is set to Ra out , Ra in is 0.01 to 0.05 μm, and Ra out −Ra in is 0.01 to 0.2 μm. 如請求項1之波長轉換構件,其中上述光出射面之表面粗糙度Raout為0.06μm以上。 The wavelength conversion member according to claim 1, wherein the surface roughness Ra out of the light exit surface is 0.06 μm or more. 如請求項1之波長轉換構件,其係於玻璃基質中分散螢光體粉末而成。 As claimed in claim 1, the wavelength conversion member is formed by dispersing phosphor powder in a glass matrix. 如請求項2之波長轉換構件,其係於玻璃基質中分散螢光體粉末而成。 As claimed in claim 2, the wavelength conversion member is formed by dispersing phosphor powder in a glass matrix. 如請求項1至4中任一項之波長轉換構件,其厚度為0.01~1mm。 The wavelength conversion member according to any one of claims 1 to 4, whose thickness is 0.01-1 mm. 一種發光裝置,其特徵在於具備:如請求項1至5中任一項之波長轉換構件、及對上述波長轉換構件照射激發光之發光元件。 A light-emitting device comprising: the wavelength conversion member according to any one of claims 1 to 5, and a light-emitting element for irradiating the wavelength conversion member with excitation light. 如請求項6之發光裝置,其中上述波長轉換構件之上述光入射面與上述發光元件藉由接著劑層而接著。 The light-emitting device according to claim 6, wherein the light-incidence surface of the wavelength conversion member and the light-emitting element are bonded to each other by an adhesive layer. 如請求項6或7之發光裝置,其中於上述波長轉換構件與上述發光元件之周圍配置有反射層。 The light-emitting device according to claim 6 or 7, wherein a reflection layer is arranged around the wavelength conversion member and the light-emitting element.
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