JP5224173B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP5224173B2
JP5224173B2 JP2008057994A JP2008057994A JP5224173B2 JP 5224173 B2 JP5224173 B2 JP 5224173B2 JP 2008057994 A JP2008057994 A JP 2008057994A JP 2008057994 A JP2008057994 A JP 2008057994A JP 5224173 B2 JP5224173 B2 JP 5224173B2
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light emitting
light
wavelength conversion
conversion layer
emitting element
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JP2009218274A (en
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光範 原田
洋 平澤
崇 戎谷
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スタンレー電気株式会社
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Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that emits mixed color light of light from a semiconductor light emitting element and light from a wavelength conversion layer.

  Currently, semiconductor light-emitting devices that produce white light by combining part of the light from the blue light-emitting element with a phosphor and combining the light from the blue light-emitting element with the light from the phosphor are used in general lighting, street lights, and heads. It is used as a light source for lighting fixtures such as lamps.

  As a conventional semiconductor light emitting device of this type, Patent Document 1 discloses a cup, a light emitting element disposed at the bottom of the cup, and a resin containing a fluorescent material that seals the light emitting element filled in the cup. A semiconductor light emitting device is disclosed.

Further, Patent Document 2 discloses a light source including a light emitting element mounted on a submount by a flip chip method and a phosphor provided around the light emitting element.
Japanese Patent No. 3152238 JP 2003-110153 A

  However, in the semiconductor light emitting device of Patent Document 1, since the light emitting element is disposed in the cup, when viewed as a light source, it appears to emit light from the entire cup. That is, the size of the light source is substantially increased. For this reason, if the light is to be controlled by an optical system such as a lens or a reflector, it is necessary to enlarge the optical system in order to effectively use the light.

  Moreover, in patent document 2, since the light of a light emitting element radiate | emits also from an upper surface and a side surface, the fluorescent substance has covered the circumference | surroundings, ie, upper surface, and side surface of a light emitting element. With such a configuration, the size of the light source can be reduced as compared with Patent Document 1.

  However, when the light source is viewed from the front (luminance from the front) characteristic, the light source of Patent Document 2 emits light from the side surface of the light emitting element, and thus the front luminance is greatly reduced. It was. In particular, the problem is significant when used in lighting devices that require high front luminance, such as automobile headlamps and road lights.

  The present invention has been made in view of such circumstances, and an object thereof is to obtain a semiconductor light emitting device having high front luminance.

To achieve the above object, a semiconductor light-emitting device of the present invention, a plurality of emission with a semiconductor epitaxial layer having a light-emitting layer, and supports the semiconductor epitaxial layer, and an element substrate which transmits light from the light emitting layer An element, a wavelength conversion layer made of a translucent member including a phosphor positioned above the light emitting elements and wavelength-converting light from the light emitting layer, a side surface of the wavelength conversion layer, and the same surface as the side surface disposed adjacent to the side surface of the plurality of light emitting elements is a side, comprising: a reflective member formed of white resin, and a substrate for the light emitting element and the reflecting member is mounted, wherein the plurality of light emitting The elements are disposed adjacent to each other without disposing the reflecting member between the light emitting elements, the wavelength conversion layer is formed in a plate shape, and the light emitting elements adjacent above and adjacent to each of the adjacent light emitting elements. Provided above between Are, the light non-transmitting member provided on a surface of the reflecting member, the reflecting member may be covering the most outer side of the plurality of light emitting elements.

  In order to achieve the above object, a semiconductor light emitting device of the present invention includes a light emitting element having a semiconductor epitaxial layer having a light emitting layer and an element substrate that supports the semiconductor epitaxial layer and transmits light from the light emitting layer. A wavelength conversion layer made of a translucent member including a phosphor that is located above and on the side of the light emitting element and converts the wavelength of light from the light emitting layer, and is disposed adjacent to at least one side of the wavelength conversion layer. And a substrate on which the light emitting element and the reflection member are mounted.

  In order to achieve the above object, a semiconductor light emitting device of the present invention includes a light emitting element having a semiconductor epitaxial layer having a light emitting layer and an element substrate that supports the semiconductor epitaxial layer and transmits light from the light emitting layer. A wavelength conversion layer made of a translucent member including a phosphor positioned on at least one side surface of the light emitting element and converting the wavelength of light from the light emitting layer; and the wavelength conversion layer of the light emitting element. And a reflecting member disposed adjacent to the side surface of the wavelength conversion layer located on the same side as the side surface, and a substrate on which the light emitting element and the reflecting member are mounted. To do.

  In the semiconductor light emitting device of the present invention, in the above invention, the reflecting member can be further disposed adjacent to at least one surface of the wavelength conversion layer located on the side surface of the light emitting element.

  In order to achieve the above object, a semiconductor light emitting device of the present invention includes a light emitting element having a semiconductor epitaxial layer having a light emitting layer and an element substrate that supports the semiconductor epitaxial layer and transmits light from the light emitting layer. A wavelength conversion layer made of a translucent member including a phosphor positioned above the light emitting element and wavelength-converting light from the light emitting layer, the wavelength conversion layer being directed upward and inward in one cross section thereof A reflective member having an inclined portion and disposed adjacent to a side surface of the light emitting element.

  The semiconductor light-emitting device of the present invention can be arranged so that the reflecting member covers a part of the wavelength conversion layer in the invention.

  In the semiconductor light emitting device of the present invention, in the above invention, a light non-transmissive member can be provided on the surface of the reflecting member. In the semiconductor light emitting device of the present invention, preferably, the reflecting member can be a white member and the non-transmissive member can be a black member.

  According to the present invention, a semiconductor light emitting device with high front luminance can be obtained.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The present invention will be described with reference to the following preferred embodiments, but can be modified in many ways without departing from the scope of the present invention, and other embodiments than the present embodiment can be utilized. be able to. Accordingly, all modifications within the scope of the present invention are included in the claims.

[First Embodiment]
A first embodiment of the present invention will be described with reference to FIGS. 1 is a cross-sectional view of the semiconductor light emitting device 10, and FIG. 2 is a perspective view. The semiconductor light emitting device 10 includes a substrate 20, a light emitting element 30 mounted on the substrate 20, a wavelength conversion layer 40 disposed at a position above the light emitting element 30, and both side surfaces of the light emitting element 30 and the wavelength conversion layer 40. And a reflecting member 50 provided on the substrate 20.

  The substrate 20 is made of, for example, a ceramic such as alumina or aluminum nitride, a resin such as glass epoxy, or a semiconductor material such as silicon. Electrode wiring (not shown) is formed on the surface of the substrate 20. In addition, a heat sink (not shown) can be provided on the back surface of the substrate 20 on which no electrode wiring is formed in order to improve heat dissipation characteristics.

  The light emitting element 30 is electrically bonded to an electrode wiring formed on the substrate 20 using a solder such as AuSn or using a bump such as Au. When the light emitting element 30 is mounted on the electrode wiring, the element substrate side may be mounted on the substrate 20 or the semiconductor epitaxial layer side may be mounted on the substrate 20. In the present embodiment, the light emitting element 30 is, for example, a blue light emitting LED, and is an element substrate that is transmissive with respect to the emission color, such as a sapphire substrate, an SiC substrate, or a GaN substrate, and InGaN formed on the transmissive element substrate. It is comprised with the semiconductor epitaxial layer which has the light emission part comprised with a system-type semiconductor material.

  The light emitting element 30 can be manufactured, for example, by growing a semiconductor epitaxial layer on an element substrate. Moreover, as another aspect, it can manufacture by preparing an element substrate and a semiconductor epitaxial layer separately, and bonding them together.

  The wavelength conversion layer 40 includes, for example, at least one type of YAG phosphor or silicate phosphor that is excited by blue light from the light emitting element 30 and converts to a wavelength (yellow light) different from the light from the light emitting element 30. It is composed of a thermosetting resin such as silicone. Further, the wavelength conversion layer 40 can further include a scattering material.

  The wavelength conversion layer 40 is formed in a plate shape in advance by, for example, stencil printing. A plate-like wavelength conversion layer 40 is disposed on the upper surface of the light emitting element 30. The light amount of the light emitting element 30 that passes through the wavelength conversion layer 40 and the light amount of the wavelength conversion layer 40 vary depending on the thickness of the wavelength conversion layer 40 and the phosphor content. Therefore, a desired luminescent color can be easily obtained by adjusting the thickness of the wavelength conversion layer 40 and the phosphor content.

  Although the wavelength conversion layer 40 is in contact with the light emitting element 30 in FIG. 1, for example, a light transmissive resin can be formed between the wavelength conversion layer 40 and the light emitting element 30.

  The wavelength conversion layer 40 is not limited to a resin such as silicone, and may be formed of a light-transmitting member that transmits light such as glass or transparent ceramic.

  The reflecting member 50 is made of a white resin or the like in which particles such as titanium oxide or aluminum oxide are contained in a transparent resin such as silicone. The reflecting member 50 is disposed at a position adjacent to the side surface of the light emitting element 30 and the side surface of the wavelength conversion layer 40. The reflecting member 50 need not be provided adjacent to all side surfaces of the light emitting element 30. The reflecting member 50 may be disposed adjacent to at least the side surface of the light emitting element 30 located on the same side as the side surface of the wavelength conversion layer 40. This means that the reflecting member 50 does not have to be disposed between the light emitting elements 30 in the position adjacent to the side surface of the light emitting element 30 in FIG. The reason why the front luminance distribution of the semiconductor light emitting device 10 is determined is that it is the side surface of the outer edge of the light emitting element 30 located on the outermost side.

  The reflecting member 50 has substantially the same height as the total thickness of the light emitting element 30 and the wavelength conversion layer 40 on the side of the light emitting element 30 and the wavelength conversion layer 40, and the side surface of the wavelength conversion layer 40 or the light emitting element 30. Covering the sides. The height of the reflecting member 50 gradually decreases as the distance from the light emitting element 30 and the wavelength conversion layer 40 side increases. The shape of the reflecting member 50 is not limited to the shape shown in FIG. 1 as long as the side surface of the wavelength conversion layer 40 or the side surface of the light emitting element 30 is covered.

  The reflecting member 50 can be formed by, for example, mixing titanium oxide with silicone resin and applying it to a position adjacent to the side surface of the light emitting element 30 and the side surface of the wavelength conversion layer 40 with a dispenser or the like. The reflectance of the reflecting member 50 is preferably 90% or more in the visible light region.

  Further, in order to obtain the semiconductor light emitting device 10 having a sharper luminance difference between the light emitting portion and the non-light emitting portion and having the maximum luminance at the end portion, a light non-transmissive member (not shown) such as black resin is provided on the surface of the reflecting member 50. Can be formed to cover. For example, the reflecting member 50 made of white resin or the like transmits not a little light. When the light is emitted from the surface of the reflecting member 50, the boundary between the light emitting part and the non-light emitting part may not be steep. By forming a light non-transmissive member (not shown) on the surface of the reflecting member 50, it is possible to prevent light from leaking from the surface of the reflecting member 50.

  In FIG. 1, nothing is filled between the two light emitting elements 30, but the reflection member 40 and the wavelength conversion layer 40 can be further formed.

  For example, when 1 mm square light emitting elements 30 are mounted on the substrate 20 with an interval larger than 100 μm, it is preferable not to provide the wavelength conversion layer 40 between the light emitting elements 30 in order to prevent the problem of color unevenness. In the light emitting element 30 having the light transmissive element substrate, light is also irradiated from the side surface of the light emitting element 30. When the light wavelength-converted by the wavelength conversion layer 40 on the upper surface of the light emitting element 30 and the light wavelength-converted by the wavelength conversion layer between the light emitting elements 30 vary, when viewed from the front (upper surface) of the light emitting element 30 This is because color unevenness occurs.

  On the other hand, when the 1 mm square light emitting elements 30 are mounted on the substrate 20 at intervals of 100 μm or less, the amount of the wavelength conversion layer filled between the light emitting elements 30 is reduced, so that the color unevenness regardless of the presence or absence of the wavelength conversion layer. Is less likely to occur. Further, when the substrate 20 has a highly reflective surface, nothing is required.

  In the present embodiment, the combination of the light emitting element 30 and the wavelength conversion layer 40 is a blue light emitting LED and a YAG phosphor or a silicate phosphor, but is not limited thereto. For example, a combination of a light emitting element that emits ultraviolet light or near ultraviolet light and a wavelength conversion layer that emits blue light, green light, and red light when excited by light from the light emitting element can be used to obtain desired light including white light. Can produce luminescent color.

  In the semiconductor light emitting device 10 of the present embodiment, both side surfaces of the light emitting element 30 and the wavelength conversion layer 40 are covered with the reflecting member 50. The blue light emitted from the side surface of the light emitting element 30 and the white light emitted from the side surface of the wavelength conversion layer 40 are reflected by the reflecting member 50 and finally emitted from the front surface of the wavelength conversion layer 40. Thereby, the front luminance of the semiconductor light emitting device 10 can be increased.

[Second Embodiment]
A second embodiment of the present invention will be described with reference to FIG. The same components as those of the semiconductor light emitting device shown in the first embodiment may be denoted by the same reference numerals and description thereof may be omitted.

  FIG. 3 shows a cross-sectional view of the semiconductor light emitting device 10. The semiconductor light emitting device 10 is disposed adjacent to the substrate 20, the light emitting element 30 mounted on the substrate 20, the wavelength conversion layer 40 disposed around the light emitting element 30, and the side surface of the wavelength conversion layer 40, The reflecting member 50 is provided on the substrate 20.

  In the semiconductor light emitting device 10 of the second embodiment, the wavelength conversion layer 40 is formed around the light emitting element 30, on the side surface and the upper surface of the light emitting element 30. This is different from the semiconductor light emitting device of the first embodiment.

  In the second embodiment, the wavelength conversion layer 40 is printed around the light emitting element 30 by a method such as stencil printing, for example. In stencil printing, a stencil having openings corresponding to the arrangement pattern of the light emitting elements 30 is prepared. The stencil is disposed so that the light emitting element 30 is positioned at the center of the opening of the stencil. The wavelength conversion layer 40 is formed around the light emitting element 30 by injecting a thermosetting resin containing a phosphor into the opening and curing the resin.

  As with the first embodiment, for example, the reflective member 50 is formed by mixing titanium oxide with silicone resin and applying it to a position adjacent to the side surface of the light emitting element 30 and the side surface of the wavelength conversion layer 40 with a dispenser or the like. Can do. In addition, a light non-transmissive member can be formed on the surface of the reflecting member 50.

  In the semiconductor light emitting device 10 of the present embodiment, the side surface of the wavelength conversion layer 40 is covered with the reflecting member 50. White light emitted from the side surface of the wavelength conversion layer 40 is reflected by the reflecting member 50 and finally emitted from the front surface of the wavelength conversion layer 50. Thereby, the front luminance of the semiconductor light emitting device 10 can be increased.

[Third Embodiment]
A third embodiment of the present invention will be described with reference to FIG. The same components as those of the semiconductor light emitting devices shown in the first embodiment and the second embodiment may be denoted by the same reference numerals and description thereof may be omitted.

  FIG. 4 shows a cross-sectional view of the semiconductor light emitting device 10. The semiconductor light emitting device 10 includes a substrate 20, a light emitting element 30 mounted on the substrate 20, a wavelength conversion layer 40 that covers only the upper surface of the light emitting element 30, and whose cross-sectional shape is inclined inwardly upward. The reflection member 50 is disposed adjacent to the side surface of the light emitting element 30 and provided on the substrate 20.

  In the semiconductor light emitting device 10 of the third embodiment, the wavelength conversion layer 40 has a dome shape that covers only the upper surface of the light emitting element 30 and has a substantially hemispherical top. In accordance with this, the reflecting member 50 is disposed so as to cover the side surface of the light emitting element 30.

  The wavelength conversion layer 40 can be formed, for example, by potting a thermosetting resin in which a phosphor is mixed on the light emitting element 30 with a dispenser or the like. The shape of the substantially hemispherical wavelength conversion layer 40 can be changed by controlling the viscosity and thixotropy of the resin to be potted. For example, the curvature, the contact angle between the wavelength conversion layer 40 and the light emitting element 30, the height of the wavelength conversion layer 40, and the like can be changed.

  In the present embodiment, the wavelength conversion layer 40 has a substantially hemispherical dome shape. However, it does not necessarily have a hemispherical shape as a whole. The wavelength conversion layer 40 should just have the inclination which faces the inner side toward the upper direction from the side surface of the light emitting element 30. FIG. Further, the topmost portion of the wavelength conversion layer 40 may be a flat surface instead of the circular top as shown in the present embodiment.

  Further, the wavelength conversion layer 40 may have a side surface that is formed perpendicular to the upper surface of the light emitting element 30, and then has a shape that is inclined inwardly upward.

  As with the first embodiment, for example, the reflective member 50 can be formed by mixing titanium oxide with silicone resin and applying it to a position adjacent to the side surface of the light emitting element 30 with a dispenser or the like. In addition, a light non-transmissive member can be formed on the surface of the reflecting member 50.

  In the present embodiment, as shown in FIG. 4, the reflecting member 50 is disposed so as to cover only the side surface of the light emitting element 30. However, the reflecting member 50 can cover a part of the side surface of the wavelength conversion layer 40 without being limited thereto.

  Thereby, it is possible to prevent light leakage from the corners of the light emitting element 30 (ends formed from the side surfaces and the upper surface of the light emitting element 30), and to prevent unnecessary color unevenness. Moreover, the wavelength conversion layer 40 may form a substantially arc shape including the part covered with the reflecting member 50. The wavelength conversion layer 40 may have a side surface that is formed perpendicular to the upper surface of the light emitting element 30 in a portion covered with the reflecting member 50.

  In the semiconductor light emitting device 10 of the present embodiment, light emitted from the side surface of the light emitting element 30 is reflected by the reflecting member 50 and guided to the upper surface of the light emitting element 30. The light emitted from the upper surface of the light emitting element 30 is guided upward when passing through the dome-shaped wavelength conversion layer 40. As a result, it is possible to obtain the semiconductor light emitting device 10 in which the luminance values at the end portions of the light emitting portion and the regions other than the end portions are substantially equal, and the difference between the light emitting portion and the non-light emitting portion is steep.

  FIG. 5 is a graph showing a front luminance distribution of the conventional example obtained from the simulation and the semiconductor light emitting devices of the first to third embodiments. For the evaluation, as the first to third embodiments, a semiconductor light emitting device was prepared by arranging a wavelength conversion layer and a reflective member around or on the upper surface of one light emitting element of about 1 × 1 mm.

  As a conventional example, as shown in FIG. 3 of Japanese Patent Application Laid-Open No. 2003-110153, a light emitting element mounted on a substrate by a flip chip method and a wavelength conversion layer covering the periphery (upper surface and side surface) of the light emitting element are configured. A semiconductor light emitting device was prepared.

  In the graph of FIG. 5, the vertical axis represents the relative intensity of light, and the horizontal axis represents the distance from the center of the light emitting element. In the case of the first to third embodiments, this is the distance from the center of the light emitting element to the reflecting member. In the case of the conventional example, this is the distance from the center of the light emitting element to the wavelength conversion layer.

  As is apparent from the graph, the conventional example shows a gentle slope of the rise in luminance at both ends of the semiconductor light emitting device.

  On the other hand, in the second embodiment, the rise in luminance at both ends of the semiconductor light emitting device is vertical compared to the conventional example. Also, the luminance value can be increased as compared with the conventional example. This is an effect obtained when the white light emitted in the side surface direction of the wavelength conversion layer is guided to the upper surface side by the reflecting member.

  In the first embodiment, since the wavelength conversion layer is not provided on the side surface of the light emitting element, the brightness rise is further improved, that is, steep. In addition, the brightness of the semiconductor light emitting device is improved so that the luminance values at the center and both ends are substantially the same. Further, since the light from the light emitting element emitted to the side surface is also guided to the upper surface, the luminance values at the center and both ends are greatly improved as compared with the conventional example.

  In a structure in which a light emitting element having an element substrate that transmits light from a light emitting unit as in the conventional example and a wavelength conversion layer are combined, it is necessary to provide a wavelength conversion layer on the side of the light emitting element. The reason for this is that light (eg, blue light) is emitted from the side surface of the light emitting element in the conventional example, and if there is no wavelength conversion layer on the side surface of the light emitting element, it may be white depending on the viewing angle when a human sees the semiconductor light emitting device. This is because color separation is a concern when light can be seen or blue light can be seen. Therefore, in order to obtain white light, it is necessary to coat the side surface of the light emitting element with a wavelength conversion layer.

  However, in the first embodiment, it is not necessary to worry about color separation due to light from the side surface of the light emitting element by disposing the reflecting member on the side surface of the light emitting element, and thus the wavelength conversion layer is disposed on the side surface of the light emitting element. There is no need. Thereby, the size of the light emitting surface that emits white light can be reduced by the thickness of the wavelength conversion layer disposed on the side surface of the light emitting element, and the effect of improving the luminance value can be obtained.

  In the semiconductor light emitting device of the third embodiment, the brightness rises at both ends are improved so as to be vertical, that is, steep, as in the first embodiment. Regarding the luminance, the luminance at the central portion shows the minimum value, and the luminance increases from the central portion toward both ends of the light emitting portion. At the point beyond both ends, the luminance decreases substantially vertically.

  In FIG. 5, in the third embodiment, both end portions show slightly higher luminance values than the center portion. Regarding the luminance value, the first is obtained by adjusting the phosphor concentration, adjusting the degree of scattering by mixing a scattering material in the wavelength conversion layer, or appropriately adjusting the rising inclination angle of the wavelength conversion layer with respect to the upper surface of the light emitting element. Similarly to the embodiment, the luminance values of the central portion and both end portions of the light emitting portion can be made equal.

  In addition, the wavelength conversion layer in the third embodiment may have a surface that rises perpendicularly to the upper surface of the light emitting element, and then has a shape that is inclined inward toward the upper side. Such a shape can also have the above-described luminance effect.

  Next, an application example of a semiconductor light emitting device with improved front luminance distribution will be described. For example, a passing light distribution in a headlamp of a vehicle headlamp as shown in FIG. 6 requires a light distribution pattern that does not include any upward light so as not to cause illusion to the driver of the oncoming vehicle. The In a lighting device including a vehicle headlamp that requires such a light-dark boundary line HL, a semiconductor light-emitting device used as the light source requires a front luminance distribution in which the luminance is maximum at the end of the light-emitting portion. It is done.

In the light emitting part of the semiconductor light emitting device, when the central part shows the maximum value of luminance , the luminance difference between the light emitting part and the non-light emitting part becomes small at the end of the light emitting part of the semiconductor light emitting device, and a steep front luminance distribution can be obtained. Can not. A semiconductor light emitting device that does not show the maximum value at the end cannot improve the brightness of the end even if an optical system is provided. Therefore, in the light emitting part of the semiconductor light emitting device, it is required that the luminance difference between the light emitting part and the non-light emitting part is steep in at least a part of the light emitting part and its periphery. The semiconductor light-emitting device of the present invention is very effective as a light source for such an illumination device.

  Further, the light distribution in FIG. 6 shows a light distribution in which the brightness in the direction away from the center of the HV gradually decreases in illuminance except at the cut-off portion above the H line. In this case, in the second embodiment, as shown in the plan view of FIG. 7A, a reflection member 50 is provided on one surface necessary for forming the cutoff so as to cover the wavelength conversion layer 40, and the remaining portions are formed. A structure in which the reflecting member 50 is not provided on the three surfaces is preferable. One surface on which the reflecting member 50 is arranged can obtain higher luminance than the other surfaces, and a more preferable semiconductor light emitting device can be obtained in a pattern such as passing light distribution. The surface on which the reflecting member is provided may be formed in accordance with a desired light distribution. Further, in order to obtain another light distribution pattern, as shown in the plan view of FIG. 7B, the reflection member 50 is not provided on one surface, and the reflection member 50 is provided so as to cover the wavelength conversion layer 40 on the remaining three surfaces. You can also

  Moreover, the structure which combined Embodiment 1 and Embodiment 2 can be used. That is, among the four-sided light emitting element 30 and the reflecting member 50, for example, the wavelength conversion layer 40 is provided on one side as shown in FIG. 8A or one side as shown in FIG. The other surface where the layer 40 and the wavelength conversion layer 40 are not provided is covered with the reflecting member 50. In this way, the luminance distribution is obtained by combining Embodiment 1 and Embodiment 2, and the portion where the wavelength conversion layer 40 is not provided between the light emitting element 30 and the reflecting member 50 is the other portion. As compared with the above, high luminance can be obtained. Further, in this configuration, when the light emitting unit is viewed from the upper surface, the maximum luminance portion can be shifted from the center of the light emitting unit to the side where the wavelength conversion layer 40 is not provided between the light emitting element 30 and the reflecting member 50. This is because the wavelength conversion layer 40 does not cover the side surfaces of the light emitting elements 30 evenly as viewed from above, but covers them in a biased form. In order to use the semiconductor light emitting device 10 for a lamp, it is only necessary to optically design the one surface on which the wavelength conversion layer 40 is not provided to form the light / dark boundary line HL in the light distribution of FIG.

  Furthermore, as an application example, as shown in FIGS. 9A and 9B, the reflecting member 50 may not cover all of the light emitting element 30 and the wavelength conversion layer 40. The reflection member 50 may be formed only on the side surface of the light emitting element 30 that is not covered with the wavelength conversion layer 40. In this way, the side surface not covered with the reflecting member 50 has a further gradation of luminance, and the difference in luminance between the light emitting element 30 and the portion where the wavelength conversion layer 40 is not provided between the reflecting member 50 is more prominent. can do. Thereby, the semiconductor light emitting device 10 that is more preferable in a pattern such as a passing light distribution can be obtained.

  In the semiconductor light emitting device of the present invention, the side surface of the light emitting element is covered with a wavelength conversion layer or a reflecting member. This is because by covering the side surface of the light emitting element, it is possible to prevent light having an emission wavelength from being emitted from the light emitting element.

  The present invention is not limited to the above embodiment, and many modifications are possible based on the above description.

Sectional drawing which shows the semiconductor light-emitting device concerning 1st Embodiment. 1 is a perspective view showing a semiconductor light emitting device according to a first embodiment. Sectional drawing which shows the semiconductor light-emitting device concerning 2nd Embodiment. Sectional drawing which shows the semiconductor light-emitting device concerning 3rd Embodiment. The graph which shows the front luminance distribution of the semiconductor light-emitting device in this Embodiment and the conventional semiconductor light-emitting device An example of a light distribution pattern of a vehicle headlamp The top view which shows the semiconductor light-emitting device concerning 2nd Embodiment The top view which shows the semiconductor light-emitting device which concerns on other embodiment. The top view which shows the semiconductor light-emitting device which concerns on other embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Semiconductor light-emitting device, 20 ... Board | substrate, 30 ... Light emitting element, 40 ... Wavelength conversion layer, 50 ... Reflective member

Claims (3)

  1. A plurality of light emitting elements having a semiconductor epitaxial layer having a light emitting layer, and an element substrate supporting the semiconductor epitaxial layer and transmitting light from the light emitting layer;
    A wavelength conversion layer made of a translucent member including a phosphor positioned above the plurality of light emitting elements and wavelength-converting light from the light emitting layer;
    A reflective member formed of a white resin, disposed adjacent to the side surfaces of the wavelength conversion layer and the side surfaces of the plurality of light emitting elements that are on the same side as the side surfaces;
    A substrate on which the light emitting element and the reflecting member are mounted,
    The plurality of light emitting elements are arranged adjacent to each other without arranging the reflecting member between the light emitting elements,
    The wavelength conversion layer is plate-shaped, and is provided above each of the adjacent light emitting elements and above between the adjacent light emitting elements,
    A light non-transmissive member is provided on the surface of the reflective member,
    The semiconductor light emitting device, wherein the reflecting member covers a side surface of an outermost edge of the plurality of light emitting elements.
  2. The semiconductor light emitting device according to claim 1 , wherein the reflective member has a reflectance of 90% or more in a visible light region.
  3. The semiconductor light-emitting device according to claim 2, wherein the reflecting member is made of a resin mixed with titanium oxide.
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JP5521325B2 (en) * 2008-12-27 2014-06-11 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
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