TWI756207B - 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法 - Google Patents

成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法 Download PDF

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TWI756207B
TWI756207B TW106105656A TW106105656A TWI756207B TW I756207 B TWI756207 B TW I756207B TW 106105656 A TW106105656 A TW 106105656A TW 106105656 A TW106105656 A TW 106105656A TW I756207 B TWI756207 B TW I756207B
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electrode
photoelectric conversion
imaging element
layer
potential
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TW106105656A
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TW201801297A (zh
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富樫秀晃
古閑史彦
山口哲司
平田晉太郎
渡部泰一郎
安藤良洋
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日商新力股份有限公司
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/1463—Pixel isolation structures
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW106105656A 2016-03-01 2017-02-21 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法 TWI756207B (zh)

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JP2016038777 2016-03-01
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TW111102156A TWI840736B (zh) 2016-03-01 2017-02-21 成像元件、堆疊型成像元件、固態成像裝置及用於固態成像裝置之驅動方法

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Publication number Priority date Publication date Assignee Title
JP6780421B2 (ja) 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP2019041018A (ja) 2017-08-25 2019-03-14 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
TWI820114B (zh) * 2018-04-20 2023-11-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
CN112368836A (zh) 2018-07-03 2021-02-12 索尼半导体解决方案公司 成像元件和固态成像装置
JP7433231B2 (ja) 2018-07-17 2024-02-19 ソニーグループ株式会社 撮像素子および撮像装置
TWI825846B (zh) * 2022-07-13 2023-12-11 力成科技股份有限公司 封裝結構及其製造方法

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KR101861650B1 (ko) * 2011-10-17 2018-05-29 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법
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US20010025911A1 (en) * 1999-09-29 2001-10-04 Butler Philip G. Mechanical drive assembly for a brick molding apparatus
US20150334327A1 (en) * 2009-07-23 2015-11-19 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
WO2015029425A1 (en) * 2013-09-02 2015-03-05 Sony Corporation Solid-state imaging element, production method thereof, and electronic device

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JP7537571B2 (ja) 2024-08-21
JP2022027844A (ja) 2022-02-14
TW202224201A (zh) 2022-06-16
JP2023157977A (ja) 2023-10-26
JP7347487B2 (ja) 2023-09-20
CN110459551A (zh) 2019-11-15
CN110459551B (zh) 2021-04-20
JP2020188269A (ja) 2020-11-19
CN206992154U (zh) 2018-02-09
TWI840736B (zh) 2024-05-01
TW201801297A (zh) 2018-01-01
JP6992851B2 (ja) 2022-01-13

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