TWI755453B - 鑑定一光微影光罩合格性之方法及系統 - Google Patents
鑑定一光微影光罩合格性之方法及系統 Download PDFInfo
- Publication number
- TWI755453B TWI755453B TW106141158A TW106141158A TWI755453B TW I755453 B TWI755453 B TW I755453B TW 106141158 A TW106141158 A TW 106141158A TW 106141158 A TW106141158 A TW 106141158A TW I755453 B TWI755453 B TW I755453B
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- Prior art keywords
- reticle
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- different
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Links
- 238000000034 method Methods 0.000 title claims abstract description 156
- 238000012360 testing method Methods 0.000 claims abstract description 70
- 238000003384 imaging method Methods 0.000 claims abstract description 47
- 238000007689 inspection Methods 0.000 claims abstract description 44
- 230000002950 deficient Effects 0.000 claims abstract description 20
- 235000012431 wafers Nutrition 0.000 claims description 172
- 230000008569 process Effects 0.000 claims description 105
- 230000007547 defect Effects 0.000 claims description 59
- 238000001459 lithography Methods 0.000 claims description 59
- 238000013461 design Methods 0.000 claims description 58
- 238000001514 detection method Methods 0.000 claims description 55
- 238000005286 illumination Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 19
- 238000000206 photolithography Methods 0.000 claims description 18
- 210000001747 pupil Anatomy 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 description 31
- 238000012797 qualification Methods 0.000 description 22
- 230000015654 memory Effects 0.000 description 19
- 238000011084 recovery Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 238000005259 measurement Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005192 partition Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 238000000386 microscopy Methods 0.000 description 6
- 230000002238 attenuated effect Effects 0.000 description 5
- 238000004422 calculation algorithm Methods 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 5
- 238000013400 design of experiment Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000005672 electromagnetic field Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002135 phase contrast microscopy Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000013097 stability assessment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Library & Information Science (AREA)
- Toxicology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Quality & Reliability (AREA)
- Theoretical Computer Science (AREA)
- Signal Processing (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762508369P | 2017-05-18 | 2017-05-18 | |
| US62/508,369 | 2017-05-18 | ||
| US15/803,628 | 2017-11-03 | ||
| US15/803,628 US10395361B2 (en) | 2015-08-10 | 2017-11-03 | Apparatus and methods for inspecting reticles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201901291A TW201901291A (zh) | 2019-01-01 |
| TWI755453B true TWI755453B (zh) | 2022-02-21 |
Family
ID=64274553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106141158A TWI755453B (zh) | 2017-05-18 | 2017-11-27 | 鑑定一光微影光罩合格性之方法及系統 |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JP2020520481A (he) |
| KR (1) | KR20190143450A (he) |
| DE (1) | DE112017007551T5 (he) |
| IL (1) | IL270618B2 (he) |
| TW (1) | TWI755453B (he) |
| WO (1) | WO2018212787A1 (he) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017027366A1 (en) | 2015-08-10 | 2017-02-16 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
| WO2020043525A1 (en) * | 2018-08-28 | 2020-03-05 | Asml Netherlands B.V. | Systems and methods of optimal metrology guidance |
| DE102019213904A1 (de) * | 2019-09-12 | 2021-03-18 | Carl Zeiss Smt Gmbh | Verfahren zur Erfassung einer Objektstruktur sowie Vorrichtung zur Durchführung des Verfahrens |
| TWI736317B (zh) * | 2020-06-12 | 2021-08-11 | 華邦電子股份有限公司 | 用於黃光製程的辨識方法與半導體元件 |
| US11443095B2 (en) * | 2020-07-10 | 2022-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hotspot avoidance method for manufacturing integrated circuits |
| US20220307990A1 (en) * | 2021-03-24 | 2022-09-29 | Kla Corporation | Imaging reflectometry for inline screening |
| EP4082982A1 (en) | 2021-04-27 | 2022-11-02 | HeidelbergCement AG | Composite cement with improved reactivity and method for manufacturing it |
| IL310450A (he) * | 2021-08-11 | 2024-03-01 | Asml Netherlands Bv | זיהוי פגמים במסכה |
| WO2024123370A1 (en) * | 2022-12-08 | 2024-06-13 | Leia Inc. | Mehtod of large-format imprint lithography and imprint lithography mold |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201310165A (zh) * | 2011-07-19 | 2013-03-01 | Zeiss Carl Sms Gmbh | 用於分析及移除ｅｕｖ光罩的缺陷的裝置及方法 |
| US20160012579A1 (en) * | 2014-05-06 | 2016-01-14 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
| TW201602717A (zh) * | 2014-05-06 | 2016-01-16 | 克萊譚克公司 | 使用近場復原之光罩檢測 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6122056A (en) * | 1998-04-07 | 2000-09-19 | International Business Machines Corporation | Direct phase shift measurement between interference patterns using aerial image measurement tool |
| KR101056142B1 (ko) * | 2004-01-29 | 2011-08-10 | 케이엘에이-텐코 코포레이션 | 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법 |
| JP2007071678A (ja) * | 2005-09-07 | 2007-03-22 | Hitachi High-Technologies Corp | 検査システム |
| US8213704B2 (en) * | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
| WO2009152046A1 (en) * | 2008-06-11 | 2009-12-17 | Kla-Tencor Corporation | Systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof |
| EP2443651B1 (en) * | 2009-06-19 | 2015-08-12 | KLA-Tencor Corporation | Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks |
| US9612541B2 (en) * | 2013-08-20 | 2017-04-04 | Kla-Tencor Corporation | Qualifying patterns for microlithography |
| US9478019B2 (en) * | 2014-05-06 | 2016-10-25 | Kla-Tencor Corp. | Reticle inspection using near-field recovery |
| WO2017027366A1 (en) * | 2015-08-10 | 2017-02-16 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
-
2017
- 2017-11-27 TW TW106141158A patent/TWI755453B/zh active
- 2017-12-01 KR KR1020197035610A patent/KR20190143450A/ko not_active IP Right Cessation
- 2017-12-01 JP JP2019563613A patent/JP2020520481A/ja active Pending
- 2017-12-01 IL IL270618A patent/IL270618B2/he unknown
- 2017-12-01 DE DE112017007551.3T patent/DE112017007551T5/de active Pending
- 2017-12-01 WO PCT/US2017/064327 patent/WO2018212787A1/en active Application Filing
-
2022
- 2022-08-10 JP JP2022128060A patent/JP7440580B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201310165A (zh) * | 2011-07-19 | 2013-03-01 | Zeiss Carl Sms Gmbh | 用於分析及移除ｅｕｖ光罩的缺陷的裝置及方法 |
| US20160012579A1 (en) * | 2014-05-06 | 2016-01-14 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
| TW201602717A (zh) * | 2014-05-06 | 2016-01-16 | 克萊譚克公司 | 使用近場復原之光罩檢測 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112017007551T5 (de) | 2020-02-13 |
| IL270618B2 (he) | 2023-11-01 |
| KR20230070057A (ko) | 2023-05-19 |
| WO2018212787A1 (en) | 2018-11-22 |
| TW201901291A (zh) | 2019-01-01 |
| JP2022164702A (ja) | 2022-10-27 |
| IL270618B1 (he) | 2023-07-01 |
| IL270618A (he) | 2019-12-31 |
| JP2020520481A (ja) | 2020-07-09 |
| KR20190143450A (ko) | 2019-12-30 |
| JP7440580B2 (ja) | 2024-02-28 |
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