IL270618B1 - התקן ושיטה לבדיקת שריגים - Google Patents
התקן ושיטה לבדיקת שריגיםInfo
- Publication number
- IL270618B1 IL270618B1 IL270618A IL27061819A IL270618B1 IL 270618 B1 IL270618 B1 IL 270618B1 IL 270618 A IL270618 A IL 270618A IL 27061819 A IL27061819 A IL 27061819A IL 270618 B1 IL270618 B1 IL 270618B1
- Authority
- IL
- Israel
- Prior art keywords
- reticle
- images
- wafer
- different
- test
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 150
- 230000008569 process Effects 0.000 claims description 95
- 238000007689 inspection Methods 0.000 claims description 71
- 238000012360 testing method Methods 0.000 claims description 66
- 238000001459 lithography Methods 0.000 claims description 58
- 230000007547 defect Effects 0.000 claims description 57
- 238000013461 design Methods 0.000 claims description 55
- 238000003384 imaging method Methods 0.000 claims description 44
- 238000005286 illumination Methods 0.000 claims description 35
- 230000002950 deficient Effects 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 17
- 210000001747 pupil Anatomy 0.000 claims description 17
- 238000000206 photolithography Methods 0.000 claims description 12
- 230000010287 polarization Effects 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 143
- 238000004519 manufacturing process Methods 0.000 description 33
- 230000003287 optical effect Effects 0.000 description 28
- 230000015654 memory Effects 0.000 description 17
- 238000012797 qualification Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000011084 recovery Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005192 partition Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000002238 attenuated effect Effects 0.000 description 5
- 238000004422 calculation algorithm Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 238000013400 design of experiment Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000386 microscopy Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 238000001297 coherence probe microscopy Methods 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- IJJWOSAXNHWBPR-HUBLWGQQSA-N 5-[(3as,4s,6ar)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]-n-(6-hydrazinyl-6-oxohexyl)pentanamide Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)NCCCCCC(=O)NN)SC[C@@H]21 IJJWOSAXNHWBPR-HUBLWGQQSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000005321 cobalt glass Substances 0.000 description 1
- ZPUCINDJVBIVPJ-LJISPDSOSA-N cocaine Chemical compound O([C@H]1C[C@@H]2CC[C@@H](N2C)[C@H]1C(=O)OC)C(=O)C1=CC=CC=C1 ZPUCINDJVBIVPJ-LJISPDSOSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000002135 phase contrast microscopy Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- -1 quarto Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000013097 stability assessment Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Library & Information Science (AREA)
- Toxicology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Quality & Reliability (AREA)
- Theoretical Computer Science (AREA)
- Signal Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762508369P | 2017-05-18 | 2017-05-18 | |
| US15/803,628 US10395361B2 (en) | 2015-08-10 | 2017-11-03 | Apparatus and methods for inspecting reticles |
| PCT/US2017/064327 WO2018212787A1 (en) | 2017-05-18 | 2017-12-01 | Apparatus and methods for inspecting reticles |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL270618A IL270618A (he) | 2019-12-31 |
| IL270618B1 true IL270618B1 (he) | 2023-07-01 |
| IL270618B2 IL270618B2 (he) | 2023-11-01 |
Family
ID=64274553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL270618A IL270618B2 (he) | 2017-05-18 | 2017-12-01 | התקן ושיטה לבדיקת שריגים |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JP2020520481A (he) |
| KR (1) | KR20190143450A (he) |
| DE (1) | DE112017007551T5 (he) |
| IL (1) | IL270618B2 (he) |
| TW (1) | TWI755453B (he) |
| WO (1) | WO2018212787A1 (he) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017027366A1 (en) | 2015-08-10 | 2017-02-16 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
| WO2020043525A1 (en) * | 2018-08-28 | 2020-03-05 | Asml Netherlands B.V. | Systems and methods of optimal metrology guidance |
| DE102019213904A1 (de) * | 2019-09-12 | 2021-03-18 | Carl Zeiss Smt Gmbh | Verfahren zur Erfassung einer Objektstruktur sowie Vorrichtung zur Durchführung des Verfahrens |
| TWI736317B (zh) * | 2020-06-12 | 2021-08-11 | 華邦電子股份有限公司 | 用於黃光製程的辨識方法與半導體元件 |
| US11443095B2 (en) * | 2020-07-10 | 2022-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hotspot avoidance method for manufacturing integrated circuits |
| US20220307990A1 (en) * | 2021-03-24 | 2022-09-29 | Kla Corporation | Imaging reflectometry for inline screening |
| EP4082982A1 (en) | 2021-04-27 | 2022-11-02 | HeidelbergCement AG | Composite cement with improved reactivity and method for manufacturing it |
| IL310450A (he) * | 2021-08-11 | 2024-03-01 | Asml Netherlands Bv | זיהוי פגמים במסכה |
| WO2024123370A1 (en) * | 2022-12-08 | 2024-06-13 | Leia Inc. | Mehtod of large-format imprint lithography and imprint lithography mold |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160012579A1 (en) * | 2014-05-06 | 2016-01-14 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6122056A (en) * | 1998-04-07 | 2000-09-19 | International Business Machines Corporation | Direct phase shift measurement between interference patterns using aerial image measurement tool |
| KR101056142B1 (ko) * | 2004-01-29 | 2011-08-10 | 케이엘에이-텐코 코포레이션 | 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법 |
| JP2007071678A (ja) * | 2005-09-07 | 2007-03-22 | Hitachi High-Technologies Corp | 検査システム |
| US8213704B2 (en) * | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
| WO2009152046A1 (en) * | 2008-06-11 | 2009-12-17 | Kla-Tencor Corporation | Systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof |
| EP2443651B1 (en) * | 2009-06-19 | 2015-08-12 | KLA-Tencor Corporation | Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks |
| DE102011079382B4 (de) * | 2011-07-19 | 2020-11-12 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
| US9612541B2 (en) * | 2013-08-20 | 2017-04-04 | Kla-Tencor Corporation | Qualifying patterns for microlithography |
| TWI644169B (zh) * | 2014-05-06 | 2018-12-11 | 美商克萊譚克公司 | 用於使用近場復原之光罩檢測之電腦實施方法、非暫時性電腦可讀媒體及系統 |
| US9478019B2 (en) * | 2014-05-06 | 2016-10-25 | Kla-Tencor Corp. | Reticle inspection using near-field recovery |
| WO2017027366A1 (en) * | 2015-08-10 | 2017-02-16 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
-
2017
- 2017-11-27 TW TW106141158A patent/TWI755453B/zh active
- 2017-12-01 KR KR1020197035610A patent/KR20190143450A/ko not_active IP Right Cessation
- 2017-12-01 JP JP2019563613A patent/JP2020520481A/ja active Pending
- 2017-12-01 IL IL270618A patent/IL270618B2/he unknown
- 2017-12-01 DE DE112017007551.3T patent/DE112017007551T5/de active Pending
- 2017-12-01 WO PCT/US2017/064327 patent/WO2018212787A1/en active Application Filing
-
2022
- 2022-08-10 JP JP2022128060A patent/JP7440580B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160012579A1 (en) * | 2014-05-06 | 2016-01-14 | Kla-Tencor Corporation | Apparatus and methods for predicting wafer-level defect printability |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112017007551T5 (de) | 2020-02-13 |
| IL270618B2 (he) | 2023-11-01 |
| KR20230070057A (ko) | 2023-05-19 |
| TWI755453B (zh) | 2022-02-21 |
| WO2018212787A1 (en) | 2018-11-22 |
| TW201901291A (zh) | 2019-01-01 |
| JP2022164702A (ja) | 2022-10-27 |
| IL270618A (he) | 2019-12-31 |
| JP2020520481A (ja) | 2020-07-09 |
| KR20190143450A (ko) | 2019-12-30 |
| JP7440580B2 (ja) | 2024-02-28 |
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