TWI755391B - 用於電漿強化的化學氣相沉積的疊置改良的方法 - Google Patents

用於電漿強化的化學氣相沉積的疊置改良的方法 Download PDF

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TWI755391B
TWI755391B TW106113042A TW106113042A TWI755391B TW I755391 B TWI755391 B TW I755391B TW 106113042 A TW106113042 A TW 106113042A TW 106113042 A TW106113042 A TW 106113042A TW I755391 B TWI755391 B TW I755391B
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鈴木洋一
文揚 蔣
光德道格拉斯 李
盛井貴司
後藤裕太
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美商應用材料股份有限公司
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Abstract

本揭示案大致關於用於執行半導體設備製造的方法，且更具體而言是關於平版印刷疊置技術上的改良。用於改良疊置的方法包括以下步驟：在一基板上沉積一材料；使用熱能在一腔室中加熱一基板；量測各基板的一局部應力圖樣，其中量測該局部應力圖樣的步驟量測該基板上之該經沉積材料之一深度上的一改變量；在一k圖上繪製複數個點以決定該基板的一局部應力圖樣；調整施用於該k圖上之該等點的該熱能；針對該k圖上之該等點中的各者決定一敏感度值；及將一校正因數施用於該經施用的熱能，以調整該局部應力圖樣。

Description

用於電漿強化的化學氣相沉積的疊置改良的方法
本揭示案的實施例大致關於半導體處理。更具體而言，本揭示案的實施例關於用於電漿強化的化學氣相沉積（PECVE）平版印刷疊置的方法。
在製造積體電路（IC）或晶片時，表示不同晶片層的圖樣由晶片設計者所產生。從該等圖樣產生一系列可重複使用的遮罩或光罩以在製造程序期間將各晶片層的設計轉移至半導體基板上。遮罩圖樣產生系統使用準確的雷射或電子束來將各晶片層的設計成像至各別的遮罩上。接著很像照相底片地將遮罩用以將各層的電路圖樣轉移至半導體基板上。該等層是使用一定序列的程序來建立的，且被轉換成包括各完成的晶片的微小的電晶體及電路。一般而言，半導體基板上的設備是由一定順序的平版印刷處理步驟所製造的，其中該等設備形成自複數個疊置的層，各層具有個別的圖樣。一般而言，15到100個遮罩的集合被用來建構晶片，且可重複使用。
在一個層及重疊該一個層的下個層之間，該一個層及下個層的個別圖樣必須對準。然而，由於多個疊置層中的圖樣及材料差異，層之間的薄膜應力及/或拓樸變化（或圖樣相關的差異）是不可避免的。形成於基板上的層之間所產生的薄膜應力將使得基板變形，如此可能導致形成於基板上之半導體設備的設備產量問題。殘留應力可能是在基板處理步驟期間由於電漿蝕刻或電漿沉積程序期間的熱膨脹、電漿不均勻性分佈及/或電漿密度上的差異而產生的，其造成基板表面局部變形且導致不理想的疊置誤差。在疊置誤差或圖樣位移不理想地發生時，形成於基板上之設備晶粒的尺寸、尺度或結構可能不規則地變形或扭曲，因此增加了堆疊於其上之薄膜層間之錯準的可能性，該可能性可能不利地增加後續平版印刷暴露程序中的錯準機率。
因此，因為形成於基板中的局部曲線在可靠地形成下一代半導體設備（其具有較小的設備特徵尺寸）的能力上可能具有戲劇性的影響，存在著用於偵測半導體基板之局部變形的系統及方法的需要，該系統及方法可用以調整或校正基板中的局部變形。
本揭示案的實施例提供了用於改良疊置的方法及系統。在一個實施例中，一種用於改良多於一個腔室間之疊置的方法。該方法包括以下步驟：使用熱能來加熱各腔室中的一基板；量測各基板的一局部應力圖樣；調整提供至各腔室的所施用的該熱能；回應於調整各腔室中的該熱能而決定一敏感度值；及對該經施用的熱能施用一校正因數，以調整各腔室之間的該局部應力圖樣。
在另一實施例中，揭露了一種用於改良一處理系統中之疊置的方法。該方法包括以下步驟：使用熱能來加熱各腔室中的一基板；針對各基板使用一度量衡工具來量測一局部應力圖樣；在各腔室中之該處理系統中基於從該量測程序所獲取的該基板應力圖樣來在一計算系統中決定一熱調整配方；及對安置在該處理系統中的該熱能施用一校正因數，以調整各腔室之間的該局部應力圖樣。
在另一實施例中，揭露了一種非暫時性電腦可讀取媒體。該非暫時性電腦可讀取媒體包括指令，該等指令在被一系統的一處理單元執行時，使得該系統藉由執行以下步驟來監控該系統中的一應力圖樣：使用熱能來加熱各腔室中的一基板；針對各基板使用一度量衡工具來量測一局部應力圖樣；在各腔室中之該處理系統中基於從該量測程序所獲取的該基板應力圖樣來在一計算系統中決定一熱調整配方；及對安置在該處理系統中的該熱能施用一校正因數，以調整各腔室之間的該局部應力圖樣。
本揭示案大致關於用於執行半導體設備製造的方法，且更具體而言是關於平版印刷疊置技術上的改良。用於改良疊置的方法包括以下步驟：使用熱能在一腔室中加熱一基板；在一k圖上繪製一或更多個點，以決定該基板的一局部應力圖樣；調整施用於該k圖上之該一或更多個點的該熱能；針對該k圖上之該一或更多個點中的各者決定一敏感度值；及將一校正因數施用於該經施用的熱能，以調整該局部應力圖樣。
圖1圖示示例性電漿處理腔室100的部分橫截面圖，該電漿處理腔室可被使用或更改為執行本文中所述的方法。本文中所述的實施例可使用任何合適的處理腔室來執行，例如電漿強化的化學氣相沉積（PECVD）腔室。處理腔室可被併進基板處理系統。合適系統的示例包括位於加州聖克拉拉市中之應用材料公司市售之可使用DxZTM 處理腔室的CENTURA®系統、PRECISION 5000®系統、PRODUCERTM 系統、PRODUCER GTTM 及PRODUCER SETM 處理腔室。設想的是，其他沉積處理系統（包括可從其他製造商取得的彼等沉積處理系統）可被調適為實行本文中所述的實施例。
處理腔室100可為處理系統的部件，該處理系統包括連接至中心傳輸腔室且受自動機服務的多個處理腔室。處理腔室100包括定義處理容積112的壁106、底部108及蓋110。壁106及底部108可以單塊的鋁製造。處理腔室100亦可包括泵送環114，該泵送環將處理容積112流體耦合至排氣口116以及其他泵送元件（未圖示）。
基板支撐組件138（其可被加熱）可居中地安置在處理腔室100內。在一個實施例中，基板支撐組件138可以來自安置在該組件內之一或更多個加熱器的熱能加熱。基板支撐組件138在沉積程序期間支撐基板103。基板支撐組件138一般以鋁、陶瓷或鋁及陶瓷的組合製造，且包括至少一個徧壓電極132。偏壓電極132可為電子夾持電極、RF基板偏壓電極或其組合。
一般而言，基板支撐組件138耦合至幹142。幹142提供用於基板支撐組件138及處理腔室100之其他元件間之電導線、真空及氣體供應線路的導管。此外，幹142將基板支撐組件138耦合至升降系統144，該升降系統在升高位置（如圖1中所示）及下降位置（未圖示）之間移動基板支撐組件138以促進自動傳輸。伸縮管146提供了處理容積112及腔室100外面的大氣之間的真空密封，同時促進基板支撐組件138的移動。
蓮蓬頭118可一般耦合至蓋110的內側120。進入處理腔室100的氣體（亦即處理氣體及/或其他氣體）穿過蓮蓬頭118及進入處理腔室100。遠端電漿源105可耦合在氣體源104及處理容積112之間。電漿電源160可耦合至蓮蓬頭118以使朝向基板103通過蓮蓬頭118的氣體帶電，該基板安置在基板支撐組件138上。電漿電源160可提供用於形成電漿區域的電力，例如RF電力或微波電力。
可由計算設備154控制處理腔室100的功能。計算設備154可為控制器。計算設備154可為任何形式的一般用途電腦中的一者，該電腦可用在工業環境中以供控制各種腔室及子處理器。計算設備154包括電腦處理器156、記憶體158及各種支援電路162，該等支援電路可耦合至電腦處理器156以供使用傳統的方式支援電腦處理器156。軟體常式可依需要儲存在記憶體158中或由位在遠端的第二計算設備（未圖示）執行。計算設備154可更包括一或更多個電腦可讀取媒體（未圖示）。
圖2A圖示處理系統200的平面圖，該處理系統併入一或更多個腔室（例如圖1中所描繪的腔室100），以便在單一處理系統中執行改良的疊置程序。處理系統200一般而言產生處理環境，在該處理環境處，可在基板上執行各種程序，例如應力及/或疊置量測程序及表面改造程序。處理系統200一般包括系統控制器254，該系統控制器被編程為實現處理系統200中所執行的各種程序。
系統控制器254可用以控制處理系統200中存在的一或更多個元件。在某些配置下，系統控制器254可形成控制器154（其於上文中參照圖1討論）的部件。系統控制器254一般而言被設計為促進處理系統200的控制及自動化，且一般包括中央處理器（CPU）（未圖示）、記憶體（未圖示）及支援電路（或I/O）（未圖示）。
處理系統200包括複數個處理腔室204、206、208及傳輸腔室212。各處理腔室204、206、208可被配置為一次處理一或更多個基板203。處理腔室204、206、208可具有相同或不同的基板處理性能。
處理系統200亦可包括連接至傳輸腔室212的加載鎖腔室216及224。在一個實施例中，加載鎖腔室216及224亦可用作一或更多個服務腔室以供提供用於處理系統200內之處理的各種功能，例如基板定向、基板檢驗、加熱、冷卻、除氣等等。
傳輸腔室212定義傳輸容積252。基板傳輸自動機214安置在傳輸容積252中以供在處理腔室204、206、208及加載鎖腔室216或224之中傳輸基板203。
處理系統200可包括連接一或更多個豆狀體加載器222及加載鎖腔室216及224的工廠介面218。加載鎖腔室216及224在工廠介面218及傳輸腔室212之間提供第一真空介面，該真空介面可在處理期間被維持在真空狀態下。各豆狀體加載器222被配置為接納用於固持及傳輸複數個基板的盒228。工廠介面218包括被配置為使基板在加載鎖腔室216及224以及該一或更多個豆狀體加載器222之間穿梭的FI自動機220。處理系統200可執行下文所述之用於單一處理系統中之改良疊置程序的方法。
圖2B圖示另一處理系統200的平面圖，該處理系統併入一或更多個腔室（例如圖1中所描繪的腔室100），以便在單一處理系統中執行改良的疊置程序。處理系統200一般而言產生處理環境，在該處理環境處，可在基板上執行各種程序，例如應力及/或疊置量測程序及表面改造程序。處理系統200一般包括豆狀體加載器222、自動機220、貯留區域210、傳輸自動機214及處理腔室204a-204f。
豆狀體加載器222包括FOUP（前開式統一盒）的對偶。基板203藉由自動機220從豆狀體加載器222傳輸進低壓貯留區域210。自動機220可包括兩個機器手臂220a、220b。各機器手臂220a、220b從豆狀體加載器222中的各者傳輸不同的基板203。傳輸自動機214用以從貯留區域210向處理腔室204a-204f傳輸基板203及傳回該等基板。處理腔室204a-204f可包括用於沉積、退火、固化及/或蝕刻基板203的一或更多個系統元件。圖2B的處理系統200可執行下文所述之用於單一處理系統中之改良疊置程序的方法。
依據一個實施例，圖3圖示用於改良二或更多個腔室間之疊置的方法。方法300可由圖1中所描繪的腔室100或圖2中所描繪的系統200所利用。於操作302處，在各腔室中使用熱能來加熱各基板。施用於各基板的熱可能造成基板中的扭曲，該等扭曲可能造成後續平版印刷暴露程序中的不對準。一個腔室之基板中存在的扭曲可與另一腔室之第二基板中存在的扭曲不同。如此，想要決定該等扭曲（例如肇因於溫度梯度的徑向形狀改變）出現在基板上的何處。於操作304處，在k圖上繪製一或更多個點以決定各基板的局部應力圖樣。吸收率（k）圖利用面內位移（in-plane displacement, IPD）量測（例如基板的幾何形狀）來與平版印刷疊置效能相關聯。IPD圖是利用分散在圓形IPD圖各處的複數個點（例如四十九個點）來繪製的。四十九個點可被分組成內區及外區。外區包括沿圓形IPD圖之邊緣之各種點的群組。內區包括圓形IPD圖之中心附近之各種點的群組。四十九個點中的各者有利地傳達了關於基板之拓樸的資訊以決定何處發生扭曲。一開始從四十九個點中的各者所收集的資訊被決定為是各基板的基線。
於操作306處，熱能在施用於各腔室之k圖上的該一或更多個點時被調整。再次收集來自四十九個點的資料以針對各基板之溫度改變上的各個程度決定深度剖面上的量或改變。深度剖面上的改變量為k的敏感度或消散係數的敏感度。利用一或更多個區，決定了各基板對於個別溫度改變的敏感度。例如，在具有內區及外區的雙區加熱器托架中，基板各區域之k的敏感度可使用四十九個點的一或更多個點來決定。於操作308處，回應於調整各腔室中的熱能而決定k圖上之該一或更多個點中的各者的敏感度值。可設想的是，可使用基板的密度、厚度或壓力來運算敏感度值。
於操作310處，校正因數施用於被施用的熱能以調整各腔室中的局部應力圖樣。在得知敏感度值之後，來自一個腔室的應力圖樣可藉由調整各加熱器內的熱能來與另一腔室的應力圖樣匹配以具有相同的k圖。如此，從一個腔室到下個腔室將存在著一致的改變。藉由確保從一個腔室到下個腔室之各基板的一致的改變或面內位移，可偏移平版印刷遮罩來匹配各腔室中的局部應力圖樣。
依據另一實施例，圖4圖示用於改良二或更多個腔室間之疊置的方法。該方法藉由使用熱能來加熱各腔室中的基板而開始於操作402處。施用於各基板的熱可能造成基板中的扭曲，該等扭曲可能造成後續平版印刷暴露程序中的不對準。一個腔室之基板中存在的扭曲可與另一腔室之第二基板中存在的扭曲不同。如此，想要決定該等扭曲（例如肇因於溫度梯度的徑向形狀改變）出現在基板上的何處。於操作404處，針對該一或更多個腔室中的各基板使用度量衡工具來量測局部應力圖樣。在一個實施例中，用以量測局部應力圖樣的度量衡工具包括在k圖上繪製一或更多個點以決定各基板的局部應力圖樣。吸收率（k）圖利用面內位移（in-plane displacement, IPD）量測（例如基板的幾何形狀）來與平版印刷疊置效能相關聯。IPD圖是利用分散在圓形IPD圖各處的四十九個點來繪製的。四十九個點可被分組成內區及外區。外區包括沿圓形IPD圖之邊緣之各種點的群組。內區包括圓形IPD圖之中心附近之各種點的群組。四十九個點中的各者傳達了關於基板之拓樸的資訊以決定何處發生扭曲。一開始從四十九個點中的各者所收集的資訊被決定為是各基板的基線。
於操作406處，在各腔室中的處理系統中基於從量測程序所獲取的基板應力圖樣來決定熱調整配方。熱能在施用於各腔室之k圖上的該一或更多個點時被調整。再次收集來自四十九個點的資料以針對各基板之溫度改變上的各個程度決定深度剖面上的量或改變。換言之，基板上之經沉積材料之深度上的改變是在四十九個點處量測的。深度剖面上的改變量為k的敏感度或消散係數的敏感度。利用一或更多個區，決定了各基板對於個別溫度改變的敏感度。例如，在具有內區及外區的雙區加熱器托架中，基板各區域之k的敏感度可使用四十九個點的一或更多個點來決定。是回應於調整各腔室中的熱能而決定k圖上之該一或更多個點中的各者的敏感度值。
於操作408處，校正因數施用於被施用的熱能以調整各腔室中的局部應力圖樣。在得知敏感度值之後，來自一個腔室的應力圖樣可藉由調整各加熱器內的熱能來與另一腔室的應力圖樣匹配以具有相同的k圖。如此，從一個腔室到下個腔室將存在著一致的改變。藉由確保從一個腔室到下個腔室之各基板的一致的改變或面內位移，可偏移平版印刷遮罩來匹配各腔室中的局部應力圖樣。在一個實施例中，方法400可由非暫時性電腦可讀取媒體所執行。
藉由利用及具體地k映射一或更多個腔室中的一或更多個基板，可針對各腔室決定敏感度值。在得知敏感度值之後，來自一個腔室的應力圖樣可藉由調整各加熱器內的熱能來與另一腔室的應力圖樣匹配以具有相同的k圖。如此，從一個腔室到下個腔室將存在著一致的改變。藉由確保從一個腔室到下個腔室之各基板的一致的改變或面內位移，可偏移平版印刷遮罩來匹配各腔室中的局部應力圖樣，因此改良了平版印刷疊置。
雖然以上所述是針對本揭示案的實施例，可自行設計本揭示案之其他的及進一步的實施例而不脫離本揭示案的基本範圍，且本揭示案的範圍是由隨後的請求項所決定的。
100‧‧‧腔室103‧‧‧基板104‧‧‧氣體源105‧‧‧遠端電漿源106‧‧‧壁110‧‧‧蓋112‧‧‧處理容積114‧‧‧泵送環116‧‧‧排氣口118‧‧‧蓮蓬頭132‧‧‧電極138‧‧‧基板支撐組件142‧‧‧幹144‧‧‧升降系統146‧‧‧伸縮管154‧‧‧控制器156‧‧‧電腦處理器158‧‧‧記憶體160‧‧‧電漿電源162‧‧‧各種支援電路200‧‧‧處理系統203‧‧‧基板204‧‧‧處理腔室204a‧‧‧處理腔室206‧‧‧處理腔室208‧‧‧處理腔室210‧‧‧貯留區域212‧‧‧腔室214‧‧‧自動機216‧‧‧加載鎖腔室218‧‧‧工廠介面220‧‧‧自動機220a‧‧‧機械手臂220b‧‧‧機械手臂222‧‧‧豆狀體加載器224‧‧‧加載鎖腔室228‧‧‧盒252‧‧‧容積254‧‧‧系統控制器300‧‧‧方法302‧‧‧操作304‧‧‧操作306‧‧‧操作308‧‧‧操作310‧‧‧操作400‧‧‧方法402‧‧‧操作404‧‧‧操作406‧‧‧操作408‧‧‧操作
可藉由參照實施例（其中的某些部分繪示於隨附的繪圖中）來擁有本揭示案的更具體描述，使得可使用詳細的方式來了解（以上所簡要概述的）以上所載之本揭示案特徵。然而，要注意的是，隨附的繪圖僅繪示此揭示案的一般實施例且因此並不視為其範圍的限制，因為本揭示案可容許其他等效的實施例。
圖1圖示示例性電漿處理腔室100的部分橫截面圖，該電漿處理腔室可被使用或更改為執行本文中所述的方法。
依據一個實施例，圖2A圖示處理系統的平面圖。
依據另一實施例，圖2B圖示處理系統的平面圖。
依據一個實施例，圖3圖示用於改良二或更多個腔室間之疊置的方法。
依據另一實施例，圖4圖示用於改良二或更多個腔室間之疊置的方法。
為了促進了解，已使用了相同參考標號（於可能處）以指定普遍用於該等圖式的相同構件。可以預期的是，於一個實施例中所揭露的構件可有益地利用在其他實施例上而不用特別記載。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
300‧‧‧方法
302‧‧‧操作
304‧‧‧操作
306‧‧‧操作
308‧‧‧操作
310‧‧‧操作

Claims (19)

  1. 一種用於改良二或更多個腔室間之疊置的方法，包括以下步驟：在一基板上沉積一材料；使用熱能來加熱各腔室中的一基板；量測各基板的一局部應力圖樣，其中量測該局部應力圖樣的步驟量測該基板上之該經沉積材料之一深度上的一改變量；調整提供至各腔室的該熱能；回應於調整各腔室中所提供的該熱能而決定一敏感度值；及對各腔室中所提供的該熱能施用一校正因數，以調整該二或更多個腔室之間的該局部應力圖樣。
  2. 如請求項1所述之方法，其中至少一個腔室為一PECVD腔室。
  3. 如請求項1所述之方法，更包括以下步驟：偏移一平版印刷遮罩以匹配各腔室中的該局部應力圖樣。
  4. 如請求項1所述之方法，其中量測一局部應力圖樣的該步驟是藉由在一k圖上繪製複數個點來決定的。
  5. 如請求項4所述之方法，其中回應於調整該熱能而決定一敏感度值的該步驟是針對該k圖上之該複數個點中的各者來決定的。
  6. 如請求項1所述之方法，其中對該經施用的熱能施用校正因數以調整各腔室間之該局部應力圖樣的該步驟是由一控制器來執行的。
  7. 如請求項6所述之方法，其中調整施用於各腔室之該熱能的該步驟是由該控制器執行的。
  8. 一種用於改良一處理系統中之疊置的方法，包括以下步驟：使用熱能來加熱各腔室中的一基板；針對各基板使用一度量衡工具來量測一局部應力圖樣；在各腔室中之該處理系統中基於從該量測程序所獲取的該基板應力圖樣來決定一熱調整配方；及對安置在該處理系統中的該熱能施用一校正因數，以調整各腔室之間的該局部應力圖樣，其中該度量衡工具是一面內位移圖。
  9. 如請求項8所述之方法，其中至少一個腔室為一PECVD腔室。
  10. 如請求項8所述之方法，更包括以下步驟：偏移一平版印刷遮罩以匹配各腔室中的該局部應力圖樣。
  11. 如請求項8所述之方法，其中量測一局部應力圖樣的該步驟是藉由在一k圖上繪製複數個點來決定的。
  12. 如請求項8所述之方法，其中對安置在該處理系統中的該熱能施用一校正因數以調整各腔室間之該局部應力圖樣的該步驟是由一控制器來執行的。
  13. 如請求項8所述之方法，其中基於該基板應力圖樣來決定一熱調整配方的該步驟是在一計算系統中決定的。
  14. 一種包括指令的非暫時性電腦可讀取媒體，該等指令在被一系統的一處理單元執行時，使得該系統藉由執行以下步驟來監控該系統中的應力圖樣：使用熱能來加熱各腔室中的一基板；針對各基板使用一度量衡工具來量測一局部應力圖樣；在各腔室中之該處理系統中基於從該量測程序所獲取的該基板應力圖樣來在一計算系統中決定一熱調整配方；及 對安置在該處理系統中的該熱能施用一校正因數，以調整各腔室之間的該局部應力圖樣，其中該度量衡工具是一面內位移圖。
  15. 如請求項14所述之非暫時性電腦可讀取媒體，其中至少一個腔室為一PECVD腔室。
  16. 如請求項14所述之非暫時性電腦可讀取媒體，更包括以下步驟：偏移一平版印刷遮罩以匹配各腔室中的該局部應力圖樣。
  17. 如請求項14所述之非暫時性電腦可讀取媒體，其中量測一局部應力圖樣的該步驟是藉由在一k圖上繪製複數個點來決定的。
  18. 如請求項14所述之非暫時性電腦可讀取媒體，其中對安置在該處理系統中的該熱能施用一校正因數以調整各腔室間之該局部應力圖樣的該步驟是由一控制器來執行的。
  19. 如請求項14所述之非暫時性電腦可讀取媒體，其中基於該基板應力圖樣來決定一熱調整配方的該步驟是在一計算系統中決定的。
TW106113042A 2016-04-22 2017-04-19 用於電漿強化的化學氣相沉積的疊置改良的方法 TWI755391B (zh)

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