TWI748736B - Light emitting device and fabrication method thereof - Google Patents

Light emitting device and fabrication method thereof Download PDF

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TWI748736B
TWI748736B TW109138908A TW109138908A TWI748736B TW I748736 B TWI748736 B TW I748736B TW 109138908 A TW109138908 A TW 109138908A TW 109138908 A TW109138908 A TW 109138908A TW I748736 B TWI748736 B TW I748736B
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pad
light
connecting material
layer
emitting diode
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TW109138908A
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TW202220066A (en
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張國彥
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友達光電股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

A light-emitting device includes a substrate, an active component layer, a first pad, a first connecting material, a first light-emitting diode and a reflective structure layer. The active component layer is located on the substrate. The first pad is located on the active component layer. The first connecting material is disposed on the first pad. The first light-emitting diode is disposed on the first connecting material. A first electrode of the first light-emitting diode is electrically connected to the first pad through the first connecting material. The reflective structure layer is disposed on the upper surface of the active component layer and has a first inclined surface facing to the first connecting material.

Description

發光裝置及其製作方法Light-emitting device and manufacturing method thereof

本發明是有關於一種發光裝置及其製作方法。The invention relates to a light-emitting device and a manufacturing method thereof.

微發光二極體顯示器（Micro Light Emitting Device Display，micro LED display）為新一代的顯示技術，其關鍵技術在於如何將大量之微型發光二極體轉移至主動元件陣列基板上。Micro Light Emitting Device Display (micro LED display) is a new generation of display technology. The key technology is how to transfer a large number of micro light emitting diodes to the active device array substrate.

一般而言，在將微型發光二極體轉移至主動元件陣列基板上之後，會以熱壓的方式使微型發光二極體銲接至主動元件陣列基板。舉例來說，藉由導熱性良好的陶瓷材料將微型發光二極體壓在錫球上，接著加熱陶瓷材料，並使熱量傳遞至錫球，使錫球熔化，藉此將微型發光二極體銲接至主動元件陣列基板。Generally speaking, after the micro light emitting diode is transferred to the active device array substrate, the micro light emitting diode is soldered to the active device array substrate by hot pressing. For example, a ceramic material with good thermal conductivity is used to press the miniature light-emitting diode on the tin ball, and then the ceramic material is heated, and the heat is transferred to the tin ball to melt the tin ball, thereby making the miniature light-emitting diode Solder to the active device array substrate.

本發明提供一種發光裝置，具有較高的生產良率。The invention provides a light-emitting device, which has a higher production yield.

本發明提供一種發光裝置的製作方法，能避免發光二極體因為雷射而受損的問題。The present invention provides a method for manufacturing a light-emitting device, which can avoid the problem of damage to the light-emitting diode due to laser.

本發明的至少一實施例提供一種發光裝置，包括基板、主動元件層、第一接墊、第一連接材、第一發光二極體以及反射結構層。主動元件層位於基板上。第一接墊位於主動元件層上。第一連接材設置於第一接墊上。第一發光二極體設置於第一連接材上。第一發光二極體之第一電極透過第一連接材而電性接至第一接墊。反射結構層設置於主動元件層之上表面上，且具有朝向第一連接材的第一斜面。第一斜面與基板之上表面之間的夾角約為30度至60度。反射結構層與第一連接材之間的距離介於10微米至100微米。At least one embodiment of the present invention provides a light-emitting device including a substrate, an active device layer, a first pad, a first connecting material, a first light-emitting diode, and a reflective structure layer. The active component layer is located on the substrate. The first pad is located on the active device layer. The first connecting material is arranged on the first pad. The first light emitting diode is arranged on the first connecting material. The first electrode of the first light emitting diode is electrically connected to the first pad through the first connecting material. The reflective structure layer is disposed on the upper surface of the active device layer and has a first inclined surface facing the first connecting material. The included angle between the first inclined surface and the upper surface of the substrate is about 30 degrees to 60 degrees. The distance between the reflective structure layer and the first connecting material is between 10 micrometers and 100 micrometers.

本發明的至少一實施例提供一種發光裝置的製作方法，包括：提供主動元件基板，主動元件基板包括基板、位於基板上的主動元件層、設置於主動元件層上的第一接墊以及設置於主動元件層上的反射結構層；將第一發光二極體設置於第一接墊上，其中第一發光二極體的第一電極與第一接墊之間具有第一連接材，且反射結構層具有朝向第一連接材的第一斜面；以雷射照射第一連接材，並使第一連接材接合至第一電極與第一接墊中的至少一者，其中至少部分雷射經由第一斜面反射至第一連接材。At least one embodiment of the present invention provides a method of manufacturing a light emitting device, including: providing an active device substrate, the active device substrate including a substrate, an active device layer on the substrate, a first pad provided on the active device layer, and The reflective structure layer on the active device layer; the first light-emitting diode is disposed on the first pad, wherein a first connecting material is provided between the first electrode of the first light-emitting diode and the first pad, and the reflective structure The layer has a first inclined surface facing the first connecting material; the first connecting material is irradiated with a laser, and the first connecting material is bonded to at least one of the first electrode and the first pad, wherein at least part of the laser passes through the An inclined surface reflects to the first connecting material.

圖1A至圖1E是依照本發明的一實施例的一種發光裝置的製作方法的剖面示意圖。圖2是圖1E的發光裝置的上視示意圖。圖1E對應圖2線a-a’的位置。1A to 1E are schematic cross-sectional views of a method for manufacturing a light-emitting device according to an embodiment of the present invention. Fig. 2 is a schematic top view of the light emitting device of Fig. 1E. Figure 1E corresponds to the position of line a-a' in Figure 2.

請參考圖1A，提供主動元件基板100。主動元件基板100包括基板110、主動元件層120、第一接墊P1以及反射結構層130。在本實施例中，主動元件基板100還包括第二接墊P2、第三接墊P3、第四接墊P4、第五接墊P5以及第六接墊P6。Please refer to FIG. 1A, an active device substrate 100 is provided. The active device substrate 100 includes a substrate 110, an active device layer 120, a first pad P1 and a reflective structure layer 130. In this embodiment, the active device substrate 100 further includes a second pad P2, a third pad P3, a fourth pad P4, a fifth pad P5, and a sixth pad P6.

主動元件層120位於基板110上。在一些實施例中，主動元件層120包括多個主動元件（未繪出）以及其他訊號線，主動元件例如為頂部閘極型的薄膜電晶體、底部閘極型的薄膜電晶體、雙閘極型的薄膜電晶體或其他形式的薄膜電晶體。The active device layer 120 is located on the substrate 110. In some embodiments, the active device layer 120 includes a plurality of active devices (not shown) and other signal lines. The active devices are, for example, top gate type thin film transistors, bottom gate type thin film transistors, and double gates. Type thin film transistors or other forms of thin film transistors.

第一接墊P1、第二接墊P2、第三接墊P3、第四接墊P4、第五接墊P5以及第六接墊P6設置於主動元件層120上。在一些實施例中，第一接墊P1、第三接墊P3以及第五接墊P5分別電性連接至主動元件層120中的不同個主動元件，且第二接墊P2、第四接墊P4以及第六接墊P6電性連接至主動元件層120中的共用訊號線（未繪出），但本發明不以此為限。The first pad P1, the second pad P2, the third pad P3, the fourth pad P4, the fifth pad P5, and the sixth pad P6 are disposed on the active device layer 120. In some embodiments, the first pad P1, the third pad P3, and the fifth pad P5 are respectively electrically connected to different active devices in the active device layer 120, and the second pad P2, the fourth pad P4 and the sixth pad P6 are electrically connected to the common signal line (not shown) in the active device layer 120, but the invention is not limited thereto.

反射結構層130設置於主動元件層上。在本實施例中，反射結構層130接觸並部分覆蓋第一接墊P1至第六接墊P6的上表面Pt與側面Ps。The reflective structure layer 130 is disposed on the active device layer. In this embodiment, the reflective structure layer 130 contacts and partially covers the upper surface Pt and the side surface Ps of the first pad P1 to the sixth pad P6.

反射結構層130包括矽、鍺、砷化鎵或上述材料中之至少一者與其他材料的堆疊層。在一些實施例中，反射結構層130不為導體，但本發明不以此為限。The reflective structure layer 130 includes silicon, germanium, gallium arsenide, or a stacked layer of at least one of the foregoing materials and other materials. In some embodiments, the reflective structure layer 130 is not a conductor, but the invention is not limited thereto.

請參考圖1B，分別於第一接墊P1、第二接墊P2、第三接墊P3、第四接墊P4、第五接墊P5以及第六接墊P6上設置第一連接材C1、第二連接材C2、第三連接材C3、第四連接材C4、第五連接材C5以及第六連接材C6。在一些實施例中，第一連接材C1、第二連接材C2、第三連接材C3、第四連接材C4、第五連接材C5以及第六連接材C6為金屬，例如錫、銦、鉍、銀、銅、金或其他金屬或包含上述金屬的合金。1B, the first connecting material C1 is provided on the first pad P1, the second pad P2, the third pad P3, the fourth pad P4, the fifth pad P5, and the sixth pad P6, respectively. The second connection material C2, the third connection material C3, the fourth connection material C4, the fifth connection material C5, and the sixth connection material C6. In some embodiments, the first connection material C1, the second connection material C2, the third connection material C3, the fourth connection material C4, the fifth connection material C5, and the sixth connection material C6 are metals, such as tin, indium, and bismuth. , Silver, copper, gold or other metals or alloys containing them.

請參考圖1C，提供第一發光二極體210、第二發光二極體220以及第三發光二極體230於載板200上。在本實施例中，載板200的表面設置有黏著層202，第一發光二極體210、第二發光二極體220以及第三發光二極體230透過黏著層202固定於載板200上。載板200包括透明材料，舉例來說，載板200為玻璃。1C, a first light-emitting diode 210, a second light-emitting diode 220, and a third light-emitting diode 230 are provided on the carrier board 200. In this embodiment, the surface of the carrier 200 is provided with an adhesive layer 202, and the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are fixed on the carrier 200 through the adhesive layer 202 . The carrier 200 includes a transparent material, for example, the carrier 200 is glass.

第一發光二極體210包括半導體層212、反射層214、第一電極216以及第二電極218。半導體層212包括P型半導體與N型半導體的堆疊層。在本實施例中，半導體層212表面具有圖案PSS1，但本發明不以此為限。反射層214位於半導體層212上，且反射層214例如為分散式布拉格反射器（Distributed Bragg reflector）。第一電極216以及第二電極218電性連接至半導體層212，在一些實施例中，第一電極216以及第二電極218穿過反射層214以接觸半導體層212。舉例來說，以黃光製程於反射層214中形成開口，使第一電極216以及第二電極218可以接觸半導體層212。The first light emitting diode 210 includes a semiconductor layer 212, a reflective layer 214, a first electrode 216, and a second electrode 218. The semiconductor layer 212 includes a stacked layer of a P-type semiconductor and an N-type semiconductor. In this embodiment, the surface of the semiconductor layer 212 has a pattern PSS1, but the invention is not limited to this. The reflective layer 214 is located on the semiconductor layer 212, and the reflective layer 214 is, for example, a distributed Bragg reflector (Distributed Bragg reflector). The first electrode 216 and the second electrode 218 are electrically connected to the semiconductor layer 212. In some embodiments, the first electrode 216 and the second electrode 218 pass through the reflective layer 214 to contact the semiconductor layer 212. For example, an opening is formed in the reflective layer 214 by a yellow light process, so that the first electrode 216 and the second electrode 218 can contact the semiconductor layer 212.

第二發光二極體220包括半導體層222、反射層224、第三電極226以及第四電極228。半導體層222包括P型半導體與N型半導體的堆疊層。在本實施例中，半導體層222表面具有圖案PSS2，但本發明不以此為限。反射層224位於半導體層222上，且反射層224例如為分散式布拉格反射器。第三電極226以及第四電極228電性連接至半導體層222，在一些實施例中，第三電極226以及第四電極228穿過反射層224以接觸半導體層222。舉例來說，以黃光製程於反射層224中形成開口，使第三電極226以及第四電極228可以接觸半導體層222。The second light emitting diode 220 includes a semiconductor layer 222, a reflective layer 224, a third electrode 226, and a fourth electrode 228. The semiconductor layer 222 includes a stacked layer of a P-type semiconductor and an N-type semiconductor. In this embodiment, the surface of the semiconductor layer 222 has a pattern PSS2, but the invention is not limited to this. The reflective layer 224 is located on the semiconductor layer 222, and the reflective layer 224 is, for example, a distributed Bragg reflector. The third electrode 226 and the fourth electrode 228 are electrically connected to the semiconductor layer 222. In some embodiments, the third electrode 226 and the fourth electrode 228 pass through the reflective layer 224 to contact the semiconductor layer 222. For example, an opening is formed in the reflective layer 224 by a yellow light process, so that the third electrode 226 and the fourth electrode 228 can contact the semiconductor layer 222.

第三發光二極體230包括半導體層232、反射層234、第五電極236以及第六電極238。半導體層232包括P型半導體與N型半導體的堆疊層。在本實施例中，半導體層232表面具有圖案PSS3，但本發明不以此為限。反射層234位於半導體層232上，且反射層234例如為分散式布拉格反射器。第五電極236以及第六電極238電性連接至半導體層232，在一些實施例中，第五電極236以及第六電極238穿過反射層234以接觸半導體層232。舉例來說，以黃光製程於反射層234中形成開口，使第五電極236以及第六電極238可以接觸半導體層232。The third light emitting diode 230 includes a semiconductor layer 232, a reflective layer 234, a fifth electrode 236, and a sixth electrode 238. The semiconductor layer 232 includes a stacked layer of a P-type semiconductor and an N-type semiconductor. In this embodiment, the surface of the semiconductor layer 232 has a pattern PSS3, but the invention is not limited to this. The reflective layer 234 is located on the semiconductor layer 232, and the reflective layer 234 is, for example, a distributed Bragg reflector. The fifth electrode 236 and the sixth electrode 238 are electrically connected to the semiconductor layer 232. In some embodiments, the fifth electrode 236 and the sixth electrode 238 pass through the reflective layer 234 to contact the semiconductor layer 232. For example, an opening is formed in the reflective layer 234 by a yellow light process, so that the fifth electrode 236 and the sixth electrode 238 can contact the semiconductor layer 232.

第一發光二極體210、第二發光二極體220以及第三發光二極體230為不同顏色的發光二極體。在一些實施例中，第一發光二極體210為藍光發光二極體，且半導體層212的材料包括經摻雜的氮化鎵（GaN）或其他半導體材料。在一些實施例中，第二發光二極體220為綠光發光二極體，且半導體層222的材料包括經摻雜的氮化鎵或其他半導體材料。在一些實施例中，第三發光二極體230為紅光發光二極體，且半導體層232的材料包括磷化鋁鎵銦（AlInGaP）或其他半導體材料。在其他實施例中，第一發光二極體210、第二發光二極體220以及第三發光二極體230的顏色以及排列順序可以依照需求而調整。The first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are light-emitting diodes of different colors. In some embodiments, the first light emitting diode 210 is a blue light emitting diode, and the material of the semiconductor layer 212 includes doped gallium nitride (GaN) or other semiconductor materials. In some embodiments, the second light emitting diode 220 is a green light emitting diode, and the material of the semiconductor layer 222 includes doped gallium nitride or other semiconductor materials. In some embodiments, the third light emitting diode 230 is a red light emitting diode, and the material of the semiconductor layer 232 includes aluminum gallium indium phosphide (AlInGaP) or other semiconductor materials. In other embodiments, the color and arrangement sequence of the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 can be adjusted according to requirements.

在本實施例中，第一發光二極體210的材料不與第二發光二極體220的材料完全相同。舉例來說，半導體層212、半導體層222以及半導體層232包括不同的材料，且反射層214、反射層224以及反射層234亦包括不同的材料。基於材料的不同，第一發光二極體210、第二發光二極體220以及第三發光二極體230分別具有不同的反射率。在一些實施例中，圖案PSS1、圖案PSS2以及圖案PSS3彼此不同。因此，進一步提升了第一發光二極體210、第二發光二極體220以及第三發光二極體230反射率的差異。In this embodiment, the material of the first light-emitting diode 210 is not completely the same as the material of the second light-emitting diode 220. For example, the semiconductor layer 212, the semiconductor layer 222, and the semiconductor layer 232 include different materials, and the reflective layer 214, the reflective layer 224, and the reflective layer 234 also include different materials. Based on the difference in materials, the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 respectively have different reflectivities. In some embodiments, the pattern PSS1, the pattern PSS2, and the pattern PSS3 are different from each other. Therefore, the difference in reflectivity of the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 is further improved.

在一些實施例中，分別於不同的藍寶石基板或其他基板上形成第一發光二極體210、第二發光二極體220以及第三發光二極體230，接著再利用巨量轉移（Mass transfer）技術將第一發光二極體210、第二發光二極體220以及第三發光二極體230轉置於載板200上。舉例來說，利用矽膠黏著材（PDMS）、靜電提取裝置或真空提取裝置將不同基板上的第一發光二極體210、第二發光二極體220以及第三發光二極體230轉移至載板200上。In some embodiments, the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are formed on different sapphire substrates or other substrates, and then mass transfer is used. 1) The first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are transferred onto the carrier board 200 by the technique. For example, the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 on different substrates are transferred to the carrier by using a silicone adhesive material (PDMS), an electrostatic extraction device, or a vacuum extraction device. 200 on the board.

請參考圖1D，將第一發光二極體210、第二發光二極體220以及第三發光二極體230設置於主動元件基板100上。在本實施例中，第二發光二極體220相鄰於第一發光二極體210以及第三發光二極體230。舉例來說，第二發光二極體220位於第一發光二極體210以及第三發光二極體230之間。1D, the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are disposed on the active device substrate 100. In this embodiment, the second light-emitting diode 220 is adjacent to the first light-emitting diode 210 and the third light-emitting diode 230. For example, the second light emitting diode 220 is located between the first light emitting diode 210 and the third light emitting diode 230.

在本實施例中，將第一發光二極體210設置於第一接墊P1以及第二接墊P2上，其中第一電極216與第一接墊P1之間具有第一連接材C1，且第二電極218與第二接墊P2之間具有第二連接材C2。反射結構層130具有朝向第一連接材C1的第一斜面S1以及朝向第二連接材C2的第二斜面S2。In this embodiment, the first light emitting diode 210 is disposed on the first pad P1 and the second pad P2, wherein a first connecting material C1 is provided between the first electrode 216 and the first pad P1, and A second connecting material C2 is provided between the second electrode 218 and the second pad P2. The reflective structure layer 130 has a first inclined surface S1 facing the first connecting material C1 and a second inclined surface S2 facing the second connecting material C2.

在本實施例中，將第二發光二極體220設置於第三接墊P3以及第四接墊P4上，其中第三電極226與第三接墊P3之間具有第三連接材C3，且第四電極228與第四接墊P4之間具有第四連接材C4。反射結構層130具有朝向第三連接材C3的第三斜面S3以及朝向第四連接材C4的第四斜面S4。In this embodiment, the second light emitting diode 220 is disposed on the third pad P3 and the fourth pad P4, wherein a third connecting material C3 is provided between the third electrode 226 and the third pad P3, and A fourth connecting material C4 is provided between the fourth electrode 228 and the fourth pad P4. The reflective structure layer 130 has a third inclined surface S3 facing the third connecting material C3 and a fourth inclined surface S4 facing the fourth connecting material C4.

在本實施例中，將第三發光二極體230設置於第五接墊P5以及第六接墊P6上，其中第五電極236與第五接墊P5之間具有第五連接材C5，且第六電極238與第六接墊P6之間具有第六連接材C6。反射結構層130具有朝向第五連接材C5的第五斜面S5以及朝向第六連接材C6的第六斜面S6。In this embodiment, the third light emitting diode 230 is disposed on the fifth pad P5 and the sixth pad P6, wherein a fifth connecting material C5 is provided between the fifth electrode 236 and the fifth pad P5, and There is a sixth connecting material C6 between the sixth electrode 238 and the sixth pad P6. The reflective structure layer 130 has a fifth inclined surface S5 facing the fifth connecting material C5 and a sixth inclined surface S6 facing the sixth connecting material C6.

在本實施例中，第一連接材C1、第二連接材C2、第三連接材C3、第四連接材C4、第五連接材C5以及第六連接材C6先形成於主動元件基板100上，之後才將第一發光二極體210、第二發光二極體220以及第三發光二極體230設置於主動元件基板100，但本發明不以此為限。在其他實施例中，第一連接材C1以及第二連接材C2形成於第一發光二極體210上，第三連接材C3以及第四連接材C4形成於第二發光二極體220上，且第五連接材C5以及第六連接材C6形成於第三發光二極體230上，之後才將第一發光二極體210、第二發光二極體220以及第三發光二極體230設置於主動元件基板100。In this embodiment, the first connection material C1, the second connection material C2, the third connection material C3, the fourth connection material C4, the fifth connection material C5, and the sixth connection material C6 are first formed on the active device substrate 100. Then, the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are disposed on the active device substrate 100, but the present invention is not limited to this. In other embodiments, the first connecting material C1 and the second connecting material C2 are formed on the first light emitting diode 210, and the third connecting material C3 and the fourth connecting material C4 are formed on the second light emitting diode 220. And the fifth connecting material C5 and the sixth connecting material C6 are formed on the third light-emitting diode 230, and then the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are arranged于 Active device substrate 100.

以雷射LS照射第一連接材C1至第六連接材C6，並使第一連接材C1接合至第一電極216與第一接墊P1中的至少一者，第一電極216透過第一連接材C1而電性接至第一接墊P1；使第二連接材C2接合至第二電極218與第二接墊P8中的至少一者，第二電極218透過第二連接材C2而電性接至第二接墊P2；使第三連接材C3接合至第三電極226與第三接墊P3中的至少一者，第三電極226透過第三連接材C3而電性接至第三接墊P3；使第四連接材C4接合至第四電極228與第四接墊P4中的至少一者，第四電極228透過第四連接材C4而電性接至第四接墊P4；使第五連接材C5接合至第五電極236與第五接墊P5中的至少一者，第五電極236透過第五連接材C5而電性接至第五接墊P5；使第六連接材C6接合至第六電極238與第六接墊P6中的至少一者，第六電極238透過第六連接材C6而電性接至第六接墊P6。在一些實施例中，雷射LS的波長為1064奈米，但本發明不以此為限。The first connection material C1 to the sixth connection material C6 are irradiated with a laser LS, and the first connection material C1 is bonded to at least one of the first electrode 216 and the first pad P1, and the first electrode 216 passes through the first connection The material C1 is electrically connected to the first pad P1; the second connecting material C2 is bonded to at least one of the second electrode 218 and the second pad P8, and the second electrode 218 is electrically connected through the second connecting material C2 Connected to the second pad P2; the third connecting material C3 is joined to at least one of the third electrode 226 and the third pad P3, and the third electrode 226 is electrically connected to the third connection through the third connecting material C3 Pad P3; the fourth connecting material C4 is joined to at least one of the fourth electrode 228 and the fourth pad P4, and the fourth electrode 228 is electrically connected to the fourth pad P4 through the fourth connecting material C4; The fifth connecting material C5 is joined to at least one of the fifth electrode 236 and the fifth pad P5, and the fifth electrode 236 is electrically connected to the fifth pad P5 through the fifth connecting material C5; the sixth connecting material C6 is joined To at least one of the sixth electrode 238 and the sixth pad P6, the sixth electrode 238 is electrically connected to the sixth pad P6 through the sixth connecting material C6. In some embodiments, the wavelength of the laser LS is 1064 nm, but the present invention is not limited to this.

在一些實施例中，以雷射LS同時照射多顆發光二極體，舉例來說，以雷射LS同時照射數排發光二極體或以雷射LS同時照射一個區域中的多個發光二極體，藉此提高發光裝置的產能。在本實施例中，以雷射LS同時照射第一連接材C1至第六連接材C6。In some embodiments, a laser LS is used to irradiate multiple light-emitting diodes at the same time. For example, a laser LS is used to irradiate several rows of light-emitting diodes at the same time or a laser LS is used to irradiate multiple light-emitting diodes in an area at the same time. Polar body, thereby improving the productivity of the light-emitting device. In this embodiment, the first connecting material C1 to the sixth connecting material C6 are simultaneously irradiated with the laser LS.

在本實施例中，部分雷射LS經由第一斜面S1反射至第一連接材C1，部分雷射LS經由第二斜面S2反射至第二連接材C2，部分雷射LS經由第三斜面S3反射至第三連接材C3部分雷射LS經由第四斜面S4反射至第四連接材C4，部分雷射LS經由第五斜面S5反射至第五連接材C5，部分雷射LS經由第六斜面S6反射至第六連接材C6。In this embodiment, part of the laser LS is reflected to the first connecting material C1 via the first inclined surface S1, part of the laser LS is reflected to the second connecting material C2 via the second inclined surface S2, and part of the laser LS is reflected via the third inclined surface S3 To the third connecting material C3, part of the laser LS is reflected to the fourth connecting material C4 through the fourth inclined surface S4, part of the laser LS is reflected to the fifth connecting material C5 through the fifth inclined surface S5, and part of the laser LS is reflected through the sixth inclined surface S6 To the sixth connecting material C6.

第一發光二極體210、第二發光二極體220以及第三發光二極體230的材料不完全相同，雷射LS在經過第一發光二極體210、第二發光二極體220以及第三發光二極體230後會有不同程度的能量損失，這會造成不同發光二極體所對應之連接材所接收到之能量大小不相等。The materials of the first light-emitting diode 210, the second light-emitting diode 220, and the third light-emitting diode 230 are not completely the same. The laser LS passes through the first light-emitting diode 210, the second light-emitting diode 220, and the After the third light-emitting diode 230, there will be different degrees of energy loss, which will cause the energy received by the connecting materials corresponding to different light-emitting diodes to be unequal.

在本實施例中，由於被反射結構層130之斜面反射之部分雷射LS在抵達連接材之前，不會穿過發光二極體本身，藉此能改善不同發光二極體所對應之連接材所接收到之能量大小不相等的問題，並提升發光裝置的生產良率。此外，反射結構層130之斜面能增加雷射LS的使用效率，使雷射LS的能量不需要太高就能完成發光二極體的銲接，藉此降低發光二極體因為雷射LS而受損的機率。In this embodiment, the part of the laser LS reflected by the inclined surface of the reflective structure layer 130 does not pass through the light-emitting diode itself before reaching the connecting material, thereby improving the connecting material corresponding to different light-emitting diodes. The received energy is not equal, and the production yield of the light-emitting device is improved. In addition, the inclined surface of the reflective structure layer 130 can increase the use efficiency of the laser LS, so that the energy of the laser LS does not need to be too high to complete the welding of the light-emitting diodes, thereby reducing the light-emitting diodes suffer from the laser LS. The probability of loss.

請參考圖1E與圖2，將載板200移除。至此，發光裝置10大致完成。在本實施例中，發光裝置10包括基板110、主動元件層120、第一接墊P1至第六接墊P6、第一連接材C1至第六連接材C6、第一發光二極體210至第三發光二極體230以及反射結構層130。反射結構層130具有第一斜面S1至第六斜面S6。第一斜面S1與基板110之上表面之間的夾角θ約為30度至60度。反射結構層130與第一連接材C1之間的距離L介於10微米至100  微米。在一些實施例中，第二斜面S2至第六斜面S6與基板110之上表面之間的夾角θ也約為30度至60度，且反射結構層130與第二連接材C2至第六連接材C6之間的距離也約介於10微米至100微米。在一些實施例中，夾角θ較佳為45度。Please refer to FIG. 1E and FIG. 2 to remove the carrier board 200. So far, the light-emitting device 10 is substantially completed. In this embodiment, the light emitting device 10 includes a substrate 110, an active device layer 120, a first pad P1 to a sixth pad P6, a first connection material C1 to a sixth connection material C6, and a first light emitting diode 210 to The third light emitting diode 230 and the reflective structure layer 130. The reflective structure layer 130 has a first slope S1 to a sixth slope S6. The included angle θ between the first slope S1 and the upper surface of the substrate 110 is about 30 degrees to 60 degrees. The distance L between the reflective structure layer 130 and the first connecting material C1 is between 10 micrometers and 100 micrometers. In some embodiments, the angle θ between the second slope S2 to the sixth slope S6 and the upper surface of the substrate 110 is also about 30 degrees to 60 degrees, and the reflective structure layer 130 is connected to the second connecting material C2 to the sixth The distance between the materials C6 is also about 10 to 100 microns. In some embodiments, the included angle θ is preferably 45 degrees.

在本實施例中，反射結構層130的第一斜面S1與第二斜面S2分別朝向第一發光二極體210的第一側210a以及第二側210b。在一些實施例中，反射結構層130更具有朝向第一發光二極體210的第三側210c的斜面以及第四側210d的斜面，藉此使更多的雷射能被夠反射至第一連結材C1以及第二連結材C2。In this embodiment, the first slope S1 and the second slope S2 of the reflective structure layer 130 face the first side 210a and the second side 210b of the first light emitting diode 210, respectively. In some embodiments, the reflective structure layer 130 further has a slope facing the third side 210c of the first light emitting diode 210 and a slope facing the fourth side 210d, so that more laser light can be reflected to the first side 210d. The connecting material C1 and the second connecting material C2.

在本實施例中，反射結構層130的第三斜面S3與第四斜面S4分別朝向第二發光二極體220的第一側220a以及第二側220b。在一些實施例中，反射結構層130更具有朝向第二發光二極體220的第三側220c以及第四側220d的斜面，藉此使更多的雷射能被夠反射至第三連結材C3以及第四連結材C4。In this embodiment, the third slope S3 and the fourth slope S4 of the reflective structure layer 130 face the first side 220a and the second side 220b of the second light emitting diode 220, respectively. In some embodiments, the reflective structure layer 130 further has slopes facing the third side 220c and the fourth side 220d of the second light-emitting diode 220, so that more laser light can be reflected to the third connecting material. C3 and the fourth connecting material C4.

在本實施例中，反射結構層130的第五斜面S5與第六斜面S6分別朝向第三發光二極體230的第一側230a以及第二側230b。在一些實施例中，反射結構層130更具有朝向第三發光二極體230的第三側230c以及第四側230d的斜面，藉此使更多的雷射能被夠反射至第五連結材C5以及第六連結材C6。In this embodiment, the fifth slope S5 and the sixth slope S6 of the reflective structure layer 130 face the first side 230a and the second side 230b of the third light-emitting diode 230, respectively. In some embodiments, the reflective structure layer 130 further has slopes facing the third side 230c and the fourth side 230d of the third light-emitting diode 230, so that more laser light can be reflected to the fifth connecting material. C5 and the sixth connecting material C6.

在本實施例中，反射結構層130自第一接墊P1（及第二接墊P2）延伸至第三接墊P3（及第四接墊P4），且反射結構層130部分覆蓋第一接墊P1（及第二接墊P2）的上表面Pt、第一接墊P1（及第二接墊P2）的側面Ps、第三接墊P3（及第四接墊P4）的上表面Pt以及第三接墊P3（及第四接墊P4）的側面Ps，且反射結構層130在第一接墊P1與第三接墊P3之間（及第二接墊P2與第四接墊P4之間）不具有通孔。在一些實施例中，反射結構層130包括防銲材料，且具有防銲功能，因此，第一接墊P1與第三接墊P3之間（及第二接墊P2與第四接墊P4之間）連續的反射結構層130能有效的保護反射結構層130下方之主動元件層120。In this embodiment, the reflective structure layer 130 extends from the first pad P1 (and the second pad P2) to the third pad P3 (and the fourth pad P4), and the reflective structure layer 130 partially covers the first pad. The upper surface Pt of the pad P1 (and the second pad P2), the side surface Ps of the first pad P1 (and the second pad P2), the upper surface Pt of the third pad P3 (and the fourth pad P4), and The side surface Ps of the third pad P3 (and the fourth pad P4), and the reflective structure layer 130 is between the first pad P1 and the third pad P3 (and between the second pad P2 and the fourth pad P4) Between) does not have through holes. In some embodiments, the reflective structure layer 130 includes a solder mask material and has a solder mask function. Therefore, between the first pad P1 and the third pad P3 (and between the second pad P2 and the fourth pad P4) The continuous reflective structure layer 130 can effectively protect the active device layer 120 under the reflective structure layer 130.

圖3是依照本發明的一實施例的一種發光裝置的剖面示意圖。圖4A是圖3的發光裝置的上視示意圖。圖3對應了圖4A線b-b’的位置。在此必須說明的是，圖3和圖4A的實施例沿用圖1E和圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 3 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 4A is a schematic top view of the light emitting device of Fig. 3. Figure 3 corresponds to the position of line b-b' in Figure 4A. It must be noted here that the embodiments of FIGS. 3 and 4A follow the element numbers and part of the content of the embodiments of FIGS. 1E and 2 in which the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

圖3以及圖4A的發光裝置20與圖1E和圖2的發光裝置10的差異在於：發光裝置20的反射結構層130具有通孔TH。The difference between the light-emitting device 20 of FIGS. 3 and 4A and the light-emitting device 10 of FIGS. 1E and 2 is that the reflective structure layer 130 of the light-emitting device 20 has through holes TH.

請參考圖3與圖4A，反射結構層130在第一接墊P1與第三接墊P3之間以及第三接墊P3與第五接墊P5之間具有通孔TH。通孔TH的尺寸可以依照實際需求而進行調整。在本實施例中，通孔TH的長度大於用於設置發光二極體之開口的AC長度，且通孔TH的寬度小於用於設置發光二極體之開口AC的寬度，但本發明不以此為限。在其他實施例中，通孔TH的長度小於或等於用於設置發光二極體之開口AC的長度，且通孔TH的寬度大於或等於用於設置發光二極體之開口AC的寬度。通孔TH能增加發光裝置20之佈線空間。在一些實施例中，通孔TH的寬度約為20微米至50微米，且長度約為50微米至100微米，但本發明不以此為限。3 and 4A, the reflective structure layer 130 has through holes TH between the first pad P1 and the third pad P3 and between the third pad P3 and the fifth pad P5. The size of the through hole TH can be adjusted according to actual needs. In this embodiment, the length of the through hole TH is greater than the AC length of the opening for arranging the light-emitting diode, and the width of the through hole TH is smaller than the width of the opening AC for arranging the light-emitting diode, but the present invention does not This is limited. In other embodiments, the length of the through hole TH is less than or equal to the length of the opening AC for arranging the light-emitting diode, and the width of the through hole TH is greater than or equal to the width of the opening AC for arranging the light-emitting diode. The through hole TH can increase the wiring space of the light emitting device 20. In some embodiments, the width of the through hole TH is about 20 μm to 50 μm, and the length is about 50 μm to 100 μm, but the present invention is not limited thereto.

圖4B是依照本發明的一實施例的一種發光裝置的剖面示意圖。在此必須說明的是，圖4B的實施例沿用圖4A的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。4B is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 4B follows the element numbers and part of the content of the embodiment of FIG. 4A, wherein the same or similar reference numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

圖4B的發光裝置30與圖4A的發光裝置20的差異在於：發光裝置30的反射結構層130包括互相分離的第一反射圖案132a、第二反射圖案132b以及第三反射圖案132c。The difference between the light emitting device 30 of FIG. 4B and the light emitting device 20 of FIG. 4A is that the reflective structure layer 130 of the light emitting device 30 includes a first reflective pattern 132a, a second reflective pattern 132b, and a third reflective pattern 132c that are separated from each other.

請參考圖4B，反射結構層130包括第一反射圖案132a、第二反射圖案132b以及第三反射圖案132c。4B, the reflective structure layer 130 includes a first reflective pattern 132a, a second reflective pattern 132b, and a third reflective pattern 132c.

第一反射圖案132a環繞第一發光二極體210，且第一斜面S1與第二斜面S2位於第一反射圖案132a上。第二反射圖案132b環繞第二發光二極體220，且第三斜面S3與第四斜面S4位於第二反射圖案上。第三反射圖案132c環繞第三發光二極體230，且第五斜面S5與第六斜面S6位於第三反射圖案132c上。The first reflective pattern 132a surrounds the first light emitting diode 210, and the first inclined surface S1 and the second inclined surface S2 are located on the first reflective pattern 132a. The second reflective pattern 132b surrounds the second light emitting diode 220, and the third inclined surface S3 and the fourth inclined surface S4 are located on the second reflective pattern. The third reflective pattern 132c surrounds the third light emitting diode 230, and the fifth inclined surface S5 and the sixth inclined surface S6 are located on the third reflective pattern 132c.

圖5是依照本發明的一實施例的一種發光裝置的剖面示意圖。圖6是圖5的發光裝置的上視示意圖。圖5對應了圖6線c-c’的位置。在此必須說明的是，圖5和圖6的實施例沿用圖1E和圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 5 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 6 is a schematic top view of the light emitting device of Fig. 5. Figure 5 corresponds to the position of line c-c' in Figure 6. It must be noted here that the embodiments of FIGS. 5 and 6 use the element numbers and part of the content of the embodiments of FIGS. 1E and 2 in which the same or similar numbers are used to denote the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

圖5以及圖6的發光裝置40與圖1E和圖2的發光裝置10的差異在於：發光裝置40的反射結構層130環繞第一發光二極體210，且反射結構層130並未環繞第二發光二極體220以及第三發光二極體230。The difference between the light emitting device 40 of FIGS. 5 and 6 and the light emitting device 10 of FIGS. 1E and 2 is that the reflective structure layer 130 of the light emitting device 40 surrounds the first light emitting diode 210, and the reflective structure layer 130 does not surround the second light emitting diode 210. The light-emitting diode 220 and the third light-emitting diode 230.

請參考圖5與圖6，在一些實施例中，第一發光二極體210為紅色發光二極體，且材料包括磷化鋁鎵銦；第二發光二極體220與第三發光二極體230為藍光發光二極體與綠光發光二極體，且材料包括經摻雜的氮化鎵。第一發光二極體210對雷射的反射率相較於第二發光二極體220與第三發光二極體230對雷射的反射率更高，因此，針對第一發光二極體210設置反射結構層130，避免出現第一發光二極體210銲接不良的問題。5 and 6, in some embodiments, the first light-emitting diode 210 is a red light-emitting diode, and the material includes aluminum gallium indium phosphide; the second light-emitting diode 220 and the third light-emitting diode The body 230 is a blue light emitting diode and a green light emitting diode, and the material includes doped gallium nitride. The reflectivity of the first light-emitting diode 210 to the laser is higher than that of the second light-emitting diode 220 and the third light-emitting diode 230 to the laser. Therefore, the reflectivity of the first light-emitting diode 210 is higher. The reflective structure layer 130 is provided to avoid the problem of poor welding of the first light emitting diode 210.

圖7是依照本發明的一實施例的一種發光裝置的剖面示意圖。圖8是圖7的發光裝置的上視示意圖。圖7對應了圖8線d-d’的位置。在此必須說明的是，圖7和圖8的實施例沿用圖1E和圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 7 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 8 is a schematic top view of the light emitting device of Fig. 7. Figure 7 corresponds to the position of line d-d' in Figure 8. It must be noted here that the embodiments of FIGS. 7 and 8 use the component numbers and part of the content of the embodiments of FIGS. 1E and 2 in which the same or similar reference numbers are used to denote the same or similar components, and the same components are omitted. Description of technical content. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

圖7以及圖8的發光裝置50與圖1E和圖2的發光裝置10的差異在於：發光裝置50的反射結構層130分離於第一接墊P1至第六接墊P6。The difference between the light emitting device 50 of FIGS. 7 and 8 and the light emitting device 10 of FIGS. 1E and 2 is that the reflective structure layer 130 of the light emitting device 50 is separated from the first pad P1 to the sixth pad P6.

請參考圖7與圖8，在本實施例中，反射結構層130設置於主動元件層120上，且不接觸第一接墊P1至第六接墊P6，藉此避免第一接墊P1至第六接墊P6互相短路。在一些實施例中，反射結構層130直接鍍於主動元件層120表面的絕緣層上。7 and 8, in this embodiment, the reflective structure layer 130 is disposed on the active device layer 120, and does not contact the first pad P1 to the sixth pad P6, thereby avoiding the first pad P1 to P1 to P6. The sixth pads P6 are short-circuited with each other. In some embodiments, the reflective structure layer 130 is directly plated on the insulating layer on the surface of the active device layer 120.

在本實施例中，反射結構層130具有第一斜面S1至第六斜面S6。第一斜面S1與基板110之上表面之間的夾角θ約為30度至60度。反射結構層130與第一連接材C1之間的距離L介於10微米至100微米。在一些實施例中，第二斜面S2至第六斜面S6與基板110之上表面之間的夾角θ也約為30度至60度，且反射結構層130與第二連接材C2至第六連接材C6之間的距離也約介於10微米至100微米。在一些實施例中，夾角θ較佳為45度。In this embodiment, the reflective structure layer 130 has a first slope S1 to a sixth slope S6. The included angle θ between the first slope S1 and the upper surface of the substrate 110 is about 30 degrees to 60 degrees. The distance L between the reflective structure layer 130 and the first connecting material C1 is between 10 μm and 100 μm. In some embodiments, the angle θ between the second slope S2 to the sixth slope S6 and the upper surface of the substrate 110 is also about 30 degrees to 60 degrees, and the reflective structure layer 130 is connected to the second connecting material C2 to the sixth The distance between the materials C6 is also about 10 to 100 microns. In some embodiments, the included angle θ is preferably 45 degrees.

在本實施例中，反射結構層130的材料包括半導體或絕緣體。在一些實施例中，反射結構層130未接觸接墊，且反射結構層130的材料可以包括導體、半導體或絕緣體。In this embodiment, the material of the reflective structure layer 130 includes a semiconductor or an insulator. In some embodiments, the reflective structure layer 130 does not contact the pads, and the material of the reflective structure layer 130 may include a conductor, a semiconductor, or an insulator.

圖9是依照本發明的一實施例的一種發光裝置的剖面示意圖。在此必須說明的是，圖9的實施例沿用圖7和圖8的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 9 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 9 uses the element numbers and part of the content of the embodiment of FIGS. 7 and 8, wherein the same or similar numbers are used to indicate the same or similar elements, and the same technical content is omitted instruction. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

請參考圖9，在發光裝置60中，第一發光二極體210與第二發光二極體220之間的反射結構層130的剖面形狀為三角形，且第二發光二極體220與第三發光二極體230之間的反射結構層130的剖面形狀為三角形。Please refer to FIG. 9, in the light-emitting device 60, the cross-sectional shape of the reflective structure layer 130 between the first light-emitting diode 210 and the second light-emitting diode 220 is a triangle, and the second light-emitting diode 220 and the third light-emitting diode 220 have a triangular cross-sectional shape. The cross-sectional shape of the reflective structure layer 130 between the light emitting diodes 230 is a triangle.

圖10是依照本發明的一實施例的一種發光裝置的剖面示意圖。在此必須說明的是，圖10的實施例沿用圖1E和圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 10 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 10 uses the component numbers and part of the content of the embodiment of FIG. 1E and FIG. instruction. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

請參考圖10，主動元件層120包括主動元件122以及平坦層124。主動元件122位於基板110上，且包括通道層CH、閘極G、源極S與汲極D。閘極G電性連接至掃描線（未繪出）。閘極G重疊於通道層CH，且閘極G與通道層CH之間夾有閘絕緣層GI。層間絕緣層ILD覆蓋閘極G以及閘絕緣層GI。源極S與汲極D位於層間絕緣層ILD上，且分別透過開口H1、H2而電性連接至通道層CH。開口H1、H2至少貫穿層間絕緣層ILD，在本實施例中，開口H1、H2貫穿閘絕緣層GI與層間絕緣層ILD。源極S電性連接至資料線（未繪出）。平坦層124覆蓋主動元件122，且具有多個開口O。開口O重疊於主動元件122的汲極D。第一接墊P1填入開口O，且主動元件122的汲極D電性連接第一接墊P1。Please refer to FIG. 10, the active device layer 120 includes an active device 122 and a flat layer 124. The active device 122 is located on the substrate 110 and includes a channel layer CH, a gate electrode G, a source electrode S, and a drain electrode D. The gate G is electrically connected to the scan line (not shown). The gate electrode G overlaps the channel layer CH, and a gate insulating layer GI is sandwiched between the gate electrode G and the channel layer CH. The interlayer insulating layer ILD covers the gate electrode G and the gate insulating layer GI. The source S and the drain D are located on the interlayer insulating layer ILD, and are electrically connected to the channel layer CH through the openings H1 and H2, respectively. The openings H1 and H2 penetrate at least the interlayer insulating layer ILD. In this embodiment, the openings H1 and H2 penetrate the gate insulating layer GI and the interlayer insulating layer ILD. The source S is electrically connected to the data line (not shown). The flat layer 124 covers the active device 122 and has a plurality of openings O. The opening O overlaps the drain D of the active device 122. The first pad P1 fills the opening O, and the drain D of the active device 122 is electrically connected to the first pad P1.

在本實施例中，主動元件122是以頂部閘極型的薄膜電晶體為例，但本發明不以此為限。在其他實施例中，主動元件122也可以是底部閘極型或其他類型的薄膜電晶體。In this embodiment, the active device 122 is a top gate type thin film transistor as an example, but the invention is not limited to this. In other embodiments, the active element 122 may also be a bottom gate type or other types of thin film transistors.

第一發光二極體210包括半導體層212、反射層214、第一電極216以及第二電極218。半導體層212包括P型半導體與N型半導體的堆疊層。在本實施例中，半導體層212表面具有圖案PSS1，但本發明不以此為限。反射層214位於半導體層212上，且反射層214例如為分散式布拉格反射器（Distributed Bragg reflector）。第一電極216以及第二電極218電性連接至半導體層212，在一些實施例中，第一電極216以及第二電極218穿過反射層214以接觸半導體層212。在本實施例中，第一電極216以及第二電極218為多層結構，第一電極216包括依序堆疊的第一層216a、第二層216b以及第三層216c，第二電極218包括依序堆疊的第一層218a、第二層218b以及第三層218c。在本實施例中，第一層216a與第一層218a的材料例如包括鈦、鉻或其他與半導體較易接合的材料，第二層216b與第二層218b的材料包括鎳、銅等阻隔銲料擴散的材料，第三層216c與第三層218c的材料包括金、鈀等與銲料潤濕效果好的材料。The first light emitting diode 210 includes a semiconductor layer 212, a reflective layer 214, a first electrode 216, and a second electrode 218. The semiconductor layer 212 includes a stacked layer of a P-type semiconductor and an N-type semiconductor. In this embodiment, the surface of the semiconductor layer 212 has a pattern PSS1, but the invention is not limited to this. The reflective layer 214 is located on the semiconductor layer 212, and the reflective layer 214 is, for example, a distributed Bragg reflector (Distributed Bragg reflector). The first electrode 216 and the second electrode 218 are electrically connected to the semiconductor layer 212. In some embodiments, the first electrode 216 and the second electrode 218 pass through the reflective layer 214 to contact the semiconductor layer 212. In this embodiment, the first electrode 216 and the second electrode 218 have a multilayer structure. The first electrode 216 includes a first layer 216a, a second layer 216b, and a third layer 216c stacked in sequence, and the second electrode 218 includes a first layer 216a, a second layer 216b, and a third layer 216c. The first layer 218a, the second layer 218b, and the third layer 218c are stacked. In this embodiment, the materials of the first layer 216a and the first layer 218a include, for example, titanium, chromium, or other materials that are easier to bond with semiconductors, and the materials of the second layer 216b and the second layer 218b include nickel, copper and other barrier solders. Diffusion materials, the materials of the third layer 216c and the third layer 218c include gold, palladium and other materials with good solder wetting effect.

在一些實施例中，反射結構層130超過第一接墊P1上表面Pt之高度d1大於或等於第一連接材C1的厚度d2，藉此增加銲接第一發光二極體210的製程良率。In some embodiments, the height d1 of the reflective structure layer 130 exceeding the upper surface Pt of the first pad P1 is greater than or equal to the thickness d2 of the first connecting material C1, thereby increasing the process yield of welding the first light emitting diode 210.

在本實施例中，第一斜面S1與基板110之上表面之間的夾角θ約為30度至60度，且第二斜面S1與基板110之上表面之間的夾角也約為30度至60度。In this embodiment, the included angle θ between the first slope S1 and the upper surface of the substrate 110 is about 30 to 60 degrees, and the included angle between the second slope S1 and the upper surface of the substrate 110 is also about 30 to 60 degrees. 60 degrees.

在本實施例中，反射結構層130與第一連接材C1之間的距離L介於10微米至100微米，且反射結構層130與第二連接材C1之間的距離L介於10微米至100微米。In this embodiment, the distance L between the reflective structure layer 130 and the first connecting material C1 is between 10 μm and 100 μm, and the distance L between the reflective structure layer 130 and the second connecting material C1 is between 10 μm and 100 microns.

在一些實施例中，反射結構層130遮蔽主動元件122，藉此避免銲接製程中的雷射對主動元件122造成損傷。In some embodiments, the reflective structure layer 130 shields the active device 122, thereby avoiding damage to the active device 122 caused by the laser during the welding process.

圖11是依照本發明的一實施例的一種發光裝置的製造方法的剖面示意圖。在此必須說明的是，圖11的實施例沿用圖1E和圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 11 is a schematic cross-sectional view of a method of manufacturing a light-emitting device according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 11 uses the component numbers and part of the content of the embodiment of FIG. 1E and FIG. instruction. For the description of the omitted parts, please refer to the foregoing embodiment, which will not be repeated here.

請參考圖11，在本實施例中，第一發光二極體210包括半導體層212、反射層214、第一電極216以及第二電極218。半導體層212包括P型半導體212a、發光層212b以及N型半導體212c的堆疊層。在本實施例中，P型半導體212a相較於N型半導體212c更靠近第一接墊P1，但本發明不以此為限。在其他實施例中，N型半導體212c相較於P型半導體212a更靠近第一接墊P1。反射層214位於半導體層212上，且反射層214例如為分散式布拉格反射器（Distributed Bragg reflector）。第一電極216電性連接至P型半導體212a，且第二電極218電性連接至N型半導體212c，在一些實施例中，第一電極216穿過反射層214以接觸P型半導體212a。舉例來說，以黃光製程於反射層214中形成開口，使第一電極216可以接觸P型半導體212a。Please refer to FIG. 11, in this embodiment, the first light emitting diode 210 includes a semiconductor layer 212, a reflective layer 214, a first electrode 216 and a second electrode 218. The semiconductor layer 212 includes a stacked layer of a P-type semiconductor 212a, a light-emitting layer 212b, and an N-type semiconductor 212c. In this embodiment, the P-type semiconductor 212a is closer to the first pad P1 than the N-type semiconductor 212c, but the invention is not limited to this. In other embodiments, the N-type semiconductor 212c is closer to the first pad P1 than the P-type semiconductor 212a. The reflective layer 214 is located on the semiconductor layer 212, and the reflective layer 214 is, for example, a distributed Bragg reflector (Distributed Bragg reflector). The first electrode 216 is electrically connected to the P-type semiconductor 212a, and the second electrode 218 is electrically connected to the N-type semiconductor 212c. In some embodiments, the first electrode 216 passes through the reflective layer 214 to contact the P-type semiconductor 212a. For example, a yellow light process is used to form an opening in the reflective layer 214 so that the first electrode 216 can contact the P-type semiconductor 212a.

在本實施例中，以雷射LS照射第一連接材C1，並使第一連接材C1接合至第一電極216與第一接墊P1中的至少一者，其中至少部分雷射LS由第一斜面S1反射至第一連接材C1。在本實施例中，雷射LS由第一斜面S1以及第二斜面S2反射至第一連接材C1。In this embodiment, the first connecting material C1 is irradiated with a laser LS, and the first connecting material C1 is bonded to at least one of the first electrode 216 and the first pad P1, wherein at least part of the laser LS is formed by the first electrode 216 and the first pad P1. An inclined surface S1 reflects to the first connecting material C1. In this embodiment, the laser LS is reflected from the first inclined surface S1 and the second inclined surface S2 to the first connecting material C1.

在本實施例中，第一斜面S1與基板110之上表面之間的夾角θ約為30度至60度，且第二斜面S1與基板110之上表面之間的夾角也約為30度至60度。In this embodiment, the included angle θ between the first slope S1 and the upper surface of the substrate 110 is about 30 to 60 degrees, and the included angle between the second slope S1 and the upper surface of the substrate 110 is also about 30 to 60 degrees. 60 degrees.

在本實施例中，反射結構層130與第一連接材C1之間的距離L介於10微米至100微米，且反射結構層130與第二連接材C1之間的距離L介於10微米至100微米。In this embodiment, the distance L between the reflective structure layer 130 and the first connecting material C1 is between 10 μm and 100 μm, and the distance L between the reflective structure layer 130 and the second connecting material C1 is between 10 μm and 100 microns.

在本實施例中，在將第一發光二極體210接合至第一接墊P1以後，移除載板200，接著再於第二電極218上形成導線（未繪出）以使第二電極218能與主動元件層120上的其他接墊（未繪出）電性連接。In this embodiment, after the first light emitting diode 210 is bonded to the first pad P1, the carrier 200 is removed, and then a wire (not shown) is formed on the second electrode 218 to make the second electrode 218 can be electrically connected to other pads (not shown) on the active device layer 120.

綜上所述，由於被反射結構層之斜面反射之部分雷射在抵達連接材之前，不會穿過發光二極體，藉此能改善不同發光二極體所對應之連接材所接收到之能量大小不相等的問題，並提升發光裝置的生產良率。此外，反射結構層之斜面能增加雷射的使用效率，使雷射的能量不需要太高就能完成發光二極體的銲接，藉此降低發光二極體因為雷射而受損的機率。In summary, because the part of the laser reflected by the inclined surface of the reflective structure layer does not pass through the light-emitting diode before reaching the connecting material, it can improve the light received by the connecting material corresponding to different light-emitting diodes. The problem of unequal energy levels, and improve the production yield of light-emitting devices. In addition, the inclined surface of the reflective structure layer can increase the use efficiency of the laser, so that the laser energy does not need to be too high to complete the welding of the light-emitting diode, thereby reducing the probability of the light-emitting diode being damaged by the laser.

10、20、30、40、50、60:發光裝置 100:主動元件基板 110:基板 120:主動元件層 122:主動元件 124:平坦層 130:反射結構層 132a:第一反射圖案 132b:第二反射圖案 132c:第三反射圖案 200:載板 202:黏著層 210:第一發光二極體 210a、220a、230a:第一側 210b、220b、230b:第二側 210c、220c、230c:第三側 210d、220d、230d:第四側 212、222、232:半導體層 212a:P型半導體 212b:發光層 212c:N型半導體 214、224、234:反射層 216:第一電極 218:第二電極 220:第二發光二極體 226:第三電極 228:第四電極 230:第三發光二極體 236:第五電極 238:第六電極 AC、H1、H2、O:開口 C1:第一連接材 C2:第二連接材 C3:第三連接材 C4:第四連接材 C5:第五連接材 C6:第六連接材 D:汲極 ILD:層間絕緣層 G:閘極 GI:閘絕緣層 L:距離 LS:雷射 θ:夾角 Pt:上表面 Ps:側面 P1:第一接墊 P2:第二接墊 P3:第三接墊 P4:第四接墊 P5:第五接墊 P6:第六接墊 S:源極 S1:第一斜面 S2:第二斜面 S3:第三斜面 S4:第四斜面 S5:第五斜面 S6:第六斜面 TH:通孔 10, 20, 30, 40, 50, 60: light-emitting device 100: Active component substrate 110: substrate 120: Active component layer 122: active component 124: Flat layer 130: reflective structure layer 132a: first reflection pattern 132b: second reflection pattern 132c: third reflection pattern 200: carrier board 202: Adhesive layer 210: The first light-emitting diode 210a, 220a, 230a: first side 210b, 220b, 230b: second side 210c, 220c, 230c: third side 210d, 220d, 230d: fourth side 212, 222, 232: semiconductor layer 212a: P-type semiconductor 212b: luminescent layer 212c: N-type semiconductor 214, 224, 234: reflective layer 216: first electrode 218: second electrode 220: second light-emitting diode 226: third electrode 228: Fourth electrode 230: third light-emitting diode 236: Fifth electrode 238: Sixth electrode AC, H1, H2, O: opening C1: The first connecting material C2: The second connecting material C3: The third connecting material C4: The fourth connecting material C5: Fifth connecting material C6: The sixth connecting material D: Dip pole ILD: Interlayer insulation layer G: Gate GI: Gate insulation layer L: distance LS: Laser θ: included angle Pt: upper surface Ps: side P1: The first pad P2: The second pad P3: third pad P4: Fourth pad P5: Fifth pad P6: The sixth pad S: source S1: The first slope S2: second slope S3: Third slope S4: Fourth slope S5: Fifth slope S6: The sixth slope TH: Through hole

圖1A至圖1E是依照本發明的一實施例的一種發光裝置的製作方法的剖面示意圖。 圖2是圖1E的發光裝置的上視示意圖。 圖3是依照本發明的一實施例的一種發光裝置的剖面示意圖。 圖4A是圖3的發光裝置的上視示意圖。 圖4B是依照本發明的一實施例的一種發光裝置的上視示意圖。 圖5是依照本發明的一實施例的一種發光裝置的剖面示意圖。 圖6是圖5的發光裝置的上視示意圖。 圖7是依照本發明的一實施例的一種發光裝置的剖面示意圖。 圖8是圖7的發光裝置的上視示意圖。 圖9是依照本發明的一實施例的一種發光裝置的剖面示意圖。 圖10是依照本發明的一實施例的一種發光裝置的剖面示意圖。 圖11是依照本發明的一實施例的一種發光裝置的製作方法的剖面示意圖。 1A to 1E are schematic cross-sectional views of a method for manufacturing a light-emitting device according to an embodiment of the present invention. Fig. 2 is a schematic top view of the light emitting device of Fig. 1E. FIG. 3 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 4A is a schematic top view of the light emitting device of Fig. 3. Fig. 4B is a schematic top view of a light emitting device according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 6 is a schematic top view of the light emitting device of Fig. 5. FIG. 7 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. Fig. 8 is a schematic top view of the light emitting device of Fig. 7. FIG. 9 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. FIG. 10 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the invention. FIG. 11 is a schematic cross-sectional view of a manufacturing method of a light-emitting device according to an embodiment of the present invention.

100:主動元件基板 100: Active component substrate

110:基板 110: substrate

120:主動元件層 120: Active component layer

130:反射結構層 130: reflective structure layer

200:載板 200: carrier board

202:黏著層 202: Adhesive layer

210:第一發光二極體 210: The first light-emitting diode

216:第一電極 216: first electrode

218:第二電極 218: second electrode

220:第二發光二極體 220: second light-emitting diode

226:第三電極 226: third electrode

228:第四電極 228: Fourth electrode

230:第三發光二極體 230: third light-emitting diode

236:第五電極 236: Fifth electrode

238:第六電極 238: Sixth electrode

C1:第一連接材 C1: The first connecting material

C2:第二連接材 C2: The second connecting material

C3:第三連接材 C3: The third connecting material

C4:第四連接材 C4: The fourth connecting material

C5:第五連接材 C5: Fifth connecting material

C6:第六連接材 C6: The sixth connecting material

LS:雷射 LS: Laser

P1:第一接墊 P1: The first pad

P2:第二接墊 P2: The second pad

P3:第三接墊 P3: third pad

P4:第四接墊 P4: Fourth pad

P5:第五接墊 P5: Fifth pad

P6:第六接墊 P6: The sixth pad

S1:第一斜面 S1: The first slope

S2:第二斜面 S2: second slope

S3:第三斜面 S3: Third slope

S4:第四斜面 S4: Fourth slope

S5:第五斜面 S5: Fifth slope

S6:第六斜面 S6: The sixth slope

Claims (20)

一種發光裝置，包括：一基板；一主動元件層，位於該基板上；一第一接墊，位於該主動元件層上；一第一連接材，設置於該第一接墊上；一第一發光二極體，設置於該第一連接材上，該第一發光二極體之一第一電極透過該第一連接材而電性接至該第一接墊；以及一反射結構層，設置於該主動元件層之上表面上，且具有朝向該第一連接材的一第一斜面，其中該第一斜面與該基板之上表面之間的夾角約為30度至60度，且該反射結構層與該第一連接材之間的距離介於10微米至100微米，其中該主動元件層包括：一主動元件，位於該基板上，且電性連接該第一接墊，其中該第一反射結構層遮蔽該主動元件。 A light emitting device includes: a substrate; an active device layer on the substrate; a first pad on the active device layer; a first connecting material on the first pad; a first light emitting device A diode is disposed on the first connecting material, one of the first electrodes of the first light-emitting diode is electrically connected to the first pad through the first connecting material; and a reflective structure layer is disposed on On the upper surface of the active device layer, there is a first inclined surface facing the first connecting material, wherein the included angle between the first inclined surface and the upper surface of the substrate is about 30 degrees to 60 degrees, and the reflective structure The distance between the layer and the first connecting material is between 10 microns and 100 microns, wherein the active device layer includes: an active device located on the substrate and electrically connected to the first pad, wherein the first reflective The structure layer shields the active device. 如請求項1所述的發光裝置，其中該反射結構層部分覆蓋該第一接墊的上表面與側面。 The light-emitting device according to claim 1, wherein the reflective structure layer partially covers the upper surface and the side surface of the first pad. 如請求項1所述的發光裝置，其中該反射結構層分離於該第一接墊。 The light-emitting device according to claim 1, wherein the reflective structure layer is separated from the first pad. 如請求項1所述的發光裝置，更包括：一第二接墊，位於該主動元件層上；一第二連接材，設置於該第二接墊上，其中該第一發光二極 體之一第二電極透過該第二連接材而電性接至該第二接墊，且該反射結構層具有朝向該第二連接材的一第二斜面，其中該第一斜面與該第二斜面分別朝向該第一發光二極體的一第一側以及一第二側。 The light-emitting device according to claim 1, further comprising: a second pad located on the active device layer; a second connecting material disposed on the second pad, wherein the first light-emitting diode A second electrode of the body is electrically connected to the second pad through the second connecting material, and the reflective structure layer has a second inclined surface facing the second connecting material, wherein the first inclined surface and the second inclined surface The inclined surfaces respectively face a first side and a second side of the first light emitting diode. 一種發光裝置，包括：一基板；一主動元件層，位於該基板上；一第一接墊，位於該主動元件層上；一第一連接材，設置於該第一接墊上；一第一發光二極體，設置於該第一連接材上，該第一發光二極體之一第一電極透過該第一連接材而電性接至該第一接墊；一反射結構層，設置於該主動元件層之上表面上，且具有朝向該第一連接材的一第一斜面，其中該第一斜面與該基板之上表面之間的夾角約為30度至60度，且該反射結構層與該第一連接材之間的距離介於10微米至100微米；一第三接墊，位於該主動元件層上；一第三連接材，設置於該第三接墊上；以及一第二發光二極體，設置於該第三連接材上，且相鄰於該第一發光二極體，其中該第二發光二極體之一第三電極透過該第三連接材而電性接至該第三接墊，且該反射結構層具有朝向該第三連接材的一第三斜面，其中該第一發光二極體與該第二發光二極體為不同顏色的發光二極體。 A light emitting device includes: a substrate; an active device layer on the substrate; a first pad on the active device layer; a first connecting material on the first pad; a first light emitting device The diode is arranged on the first connecting material, and one of the first electrodes of the first light-emitting diode is electrically connected to the first pad through the first connecting material; a reflective structure layer is arranged on the On the upper surface of the active device layer, there is a first inclined surface facing the first connecting material, wherein the included angle between the first inclined surface and the upper surface of the substrate is about 30 degrees to 60 degrees, and the reflective structure layer The distance from the first connecting material is between 10 micrometers and 100 micrometers; a third pad is located on the active device layer; a third connecting material is arranged on the third pad; and a second light emitting A diode is arranged on the third connecting material and adjacent to the first light-emitting diode, wherein a third electrode of the second light-emitting diode is electrically connected to the third connecting material through the third connecting material The third pad, and the reflective structure layer has a third inclined surface facing the third connecting material, wherein the first light-emitting diode and the second light-emitting diode are light-emitting diodes of different colors. 如請求項5所述的發光裝置，其中該反射結構層在該第一接墊以及該第三接墊之間具有通孔。 The light emitting device according to claim 5, wherein the reflective structure layer has a through hole between the first pad and the third pad. 如請求項5所述的發光裝置，其中該反射結構層自該第一接墊延伸至該第三接墊，且該反射結構層部分覆蓋該第一接墊的上表面、該第一接墊的側面、該第三接墊的上表面以及該第三接墊的側面，且該反射結構層在該第一接墊以及該第三接墊之間不具有通孔。 The light-emitting device according to claim 5, wherein the reflective structure layer extends from the first pad to the third pad, and the reflective structure layer partially covers the upper surface of the first pad and the first pad The side surface of the third pad, the upper surface of the third pad, and the side surface of the third pad, and the reflective structure layer does not have a through hole between the first pad and the third pad. 如請求項5所述的發光裝置，其中該反射結構層包括：一第一反射圖案，環繞該第一發光二極體，且該第一斜面位於該第一反射圖案上；以及一第二反射圖案，環繞該第二發光二極體，且該第三斜面位於該第二反射圖案上，其中該第一反射圖案與該第二反射圖案彼此分離。 The light-emitting device according to claim 5, wherein the reflective structure layer includes: a first reflective pattern surrounding the first light-emitting diode, and the first inclined surface is located on the first reflective pattern; and a second reflective pattern The pattern surrounds the second light emitting diode, and the third inclined surface is located on the second reflective pattern, wherein the first reflective pattern and the second reflective pattern are separated from each other. 一種發光裝置，包括：一基板；一主動元件層，位於該基板上；一第一接墊，位於該主動元件層上；一第一連接材，設置於該第一接墊上；一第一發光二極體，設置於該第一連接材上，該第一發光二極體之一第一電極透過該第一連接材而電性接至該第一接墊；以及 一反射結構層，設置於該主動元件層之上表面上，且具有朝向該第一連接材的一第一斜面，其中該第一斜面與該基板之上表面之間的夾角約為30度至60度，且該反射結構層與該第一連接材之間的距離介於10微米至100微米，其中該反射結構層包括矽、鍺、砷化鎵或上述材料中之至少一者與其他材料的堆疊層。 A light emitting device includes: a substrate; an active device layer on the substrate; a first pad on the active device layer; a first connecting material on the first pad; a first light emitting device The diode is disposed on the first connecting material, and one of the first electrodes of the first light-emitting diode is electrically connected to the first pad through the first connecting material; and A reflective structure layer is disposed on the upper surface of the active device layer and has a first inclined surface facing the first connecting material, wherein the included angle between the first inclined surface and the upper surface of the substrate is about 30 degrees to 60 degrees, and the distance between the reflective structure layer and the first connecting material is between 10 microns and 100 microns, wherein the reflective structure layer includes silicon, germanium, gallium arsenide, or at least one of the foregoing materials and other materials Of stacked layers. 如請求項9所述的發光裝置，其中該主動元件層包括：一主動元件，位於該基板上，且電性連接該第一接墊，其中該第一反射結構層遮蔽該主動元件。 The light-emitting device according to claim 9, wherein the active device layer includes: an active device located on the substrate and electrically connected to the first pad, wherein the first reflective structure layer shields the active device. 一種發光裝置的製作方法，包括：提供一主動元件基板，該主動元件基板包括：一基板；一主動元件層，位於該基板上一第一接墊，設置於該主動元件層上；以及一反射結構層，設置於該主動元件層上；將一第一發光二極體設置於該第一接墊上，其中該第一發光二極體的一第一電極與該第一接墊之間具有一第一連接材，且該反射結構層具有朝向該第一連接材的一第一斜面；以及以雷射照射該第一連接材，並使該第一連接材接合至該第一電極與該第一接墊中的至少一者，其中至少部分雷射經由該第一斜面反射至該第一連接材。 A method for manufacturing a light-emitting device includes: providing an active device substrate, the active device substrate comprising: a substrate; an active device layer on the substrate, a first pad disposed on the active device layer; and a reflector The structure layer is disposed on the active device layer; a first light-emitting diode is disposed on the first pad, wherein a first electrode of the first light-emitting diode and the first pad are provided with a A first connection material, and the reflective structure layer has a first inclined surface facing the first connection material; and irradiating the first connection material with a laser, and the first connection material is joined to the first electrode and the At least one of the pads, in which at least part of the laser is reflected to the first connecting material via the first inclined surface. 如請求項11所述的發光裝置的製作方法，其中該反射結構層部分覆蓋該第一接墊的上表面與側面。 The manufacturing method of the light emitting device according to claim 11, wherein the reflective structure layer partially covers the upper surface and the side surface of the first pad. 如請求項11所述的發光裝置的製作方法，其中該反射結構層分離於該第一接墊。 The method of manufacturing a light emitting device according to claim 11, wherein the reflective structure layer is separated from the first pad. 如請求項11所述的發光裝置的製作方法，其中更包括：將該第一發光二極體設置於該主動元件基板的該第一接墊以及一第二接墊上，其中該第二接墊設置於該主動元件層上，且該第一發光二極體的一第二電極與該第二接墊之間具有一第二連接材，其中該反射結構層具有朝向該第二連接材的一第二斜面；以及以雷射照射該第二連接材，並使該第二連接材接合至該第二電極與該第二接墊中的至少一者，其中至少部分雷射經由該第二斜面反射至該第二連接材。 The method of manufacturing a light-emitting device according to claim 11, further comprising: disposing the first light-emitting diode on the first pad and a second pad of the active device substrate, wherein the second pad Is disposed on the active device layer, and there is a second connection material between a second electrode of the first light-emitting diode and the second pad, wherein the reflective structure layer has a second connection material facing the second connection material A second inclined surface; and irradiating the second connecting material with a laser, and bonding the second connecting material to at least one of the second electrode and the second pad, wherein at least part of the laser passes through the second inclined surface Reflect to the second connecting material. 如請求項11所述的發光裝置的製作方法，其中以雷射同時照射該第一連接材以及該第二連接材。 The method of manufacturing a light emitting device according to claim 11, wherein the first connection material and the second connection material are simultaneously irradiated with a laser. 如請求項11所述的發光裝置的製作方法，更包括：將一第二發光二極體設置於該主動元件基板的一第三接墊上，其中該第三接墊設置於該主動元件層上，且該第二發光二極體的一第三電極與該第三接墊之間具有一第三連接材，其中該第二發光二極體相鄰於該第一發光二極體，且該第一發光二極體的 的材料與該第二發光二極體的材料不完全相同；以雷射照射該第三連接材，並使該第二連接材接合至該第二電極與該第二接墊中的至少一者，其中該反射結構層具有朝向該第三連接材的一第三斜面，且至少部分雷射經由該第三斜面反射至該第三連接材。 The manufacturing method of the light emitting device according to claim 11, further comprising: disposing a second light emitting diode on a third pad of the active device substrate, wherein the third pad is disposed on the active device layer , And there is a third connecting material between a third electrode of the second light-emitting diode and the third pad, wherein the second light-emitting diode is adjacent to the first light-emitting diode, and the Of the first light-emitting diode The material of is not exactly the same as the material of the second light-emitting diode; the third connecting material is irradiated with a laser, and the second connecting material is bonded to at least one of the second electrode and the second pad , Wherein the reflective structure layer has a third inclined surface facing the third connecting material, and at least part of the laser is reflected to the third connecting material through the third inclined surface. 如請求項16所述的發光裝置的製作方法，其中該反射結構層在該第一接墊以及該第三接墊之間具有通孔。 The method of manufacturing a light emitting device according to claim 16, wherein the reflective structure layer has a through hole between the first pad and the third pad. 如請求項16所述的發光裝置的製作方法，其中該反射結構層自該第一接墊延伸至該第三接墊，且該反射結構層部分覆蓋該第一接墊的上表面、該第一接墊的側面、該第三接墊的上表面以及該第三接墊的側面，且該反射結構層在該第一接墊以及該第三接墊之間不具有通孔。 The method of manufacturing a light emitting device according to claim 16, wherein the reflective structure layer extends from the first pad to the third pad, and the reflective structure layer partially covers the upper surface of the first pad and the second pad. The side surface of a pad, the upper surface of the third pad, and the side surface of the third pad, and the reflective structure layer does not have a through hole between the first pad and the third pad. 如請求項16所述的發光裝置的製作方法，其中該反射結構層包括：一第一反射圖案，環繞該第一發光二極體，且該第一斜面位於該第一反射圖案上；以及一第二反射圖案，環繞該第二發光二極體，且該第三斜面位於該第二反射圖案上，其中該第一反射圖案與該第二反射圖案彼此分離。 The method of manufacturing a light-emitting device according to claim 16, wherein the reflective structure layer comprises: a first reflective pattern surrounding the first light-emitting diode, and the first inclined surface is located on the first reflective pattern; and a The second reflection pattern surrounds the second light emitting diode, and the third inclined surface is located on the second reflection pattern, wherein the first reflection pattern and the second reflection pattern are separated from each other. 如請求項11所述的發光裝置的製作方法，其中該主動元件層包括： 一主動元件，位於該基板上，且電性連接該第一接墊，其中該第一反射結構層遮蔽該主動元件。 The method for manufacturing a light-emitting device according to claim 11, wherein the active device layer includes: An active device is located on the substrate and electrically connected to the first pad, wherein the first reflective structure layer shields the active device.
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