TWI746614B - Photoresist composition and method for forming a metal pattern using the same - Google Patents
Photoresist composition and method for forming a metal pattern using the same Download PDFInfo
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- TWI746614B TWI746614B TW106127106A TW106127106A TWI746614B TW I746614 B TWI746614 B TW I746614B TW 106127106 A TW106127106 A TW 106127106A TW 106127106 A TW106127106 A TW 106127106A TW I746614 B TWI746614 B TW I746614B
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- Prior art keywords
- photoresist composition
- weight
- photoresist
- coating
- parts
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 186
- 239000000203 mixture Substances 0.000 title claims abstract description 155
- 229910052751 metal Inorganic materials 0.000 title claims description 71
- 239000002184 metal Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 68
- 239000002904 solvent Substances 0.000 claims abstract description 54
- 150000001875 compounds Chemical class 0.000 claims abstract description 45
- 229920003986 novolac Polymers 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- -1 silane compound Chemical class 0.000 claims abstract description 20
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 58
- 238000000576 coating method Methods 0.000 claims description 39
- 239000011248 coating agent Substances 0.000 claims description 36
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 36
- 238000001035 drying Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 16
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 15
- 239000011247 coating layer Substances 0.000 claims description 11
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 claims description 11
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- AAVOCJDNQXQONR-UHFFFAOYSA-N 5,8-dioxonaphthalene-1-sulfonic acid Chemical compound O=C1C=CC(=O)C2=C1C=CC=C2S(=O)(=O)O AAVOCJDNQXQONR-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- QCOAPBRVQHMEPF-UHFFFAOYSA-N bis(2-methylpropyl) butanedioate Chemical compound CC(C)COC(=O)CCC(=O)OCC(C)C QCOAPBRVQHMEPF-UHFFFAOYSA-N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RDOFJDLLWVCMRU-UHFFFAOYSA-N Diisobutyl adipate Chemical compound CC(C)COC(=O)CCCCC(=O)OCC(C)C RDOFJDLLWVCMRU-UHFFFAOYSA-N 0.000 claims description 2
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- UFWRCRCDRAUAAO-UHFFFAOYSA-N bis(2-methylpropyl) pentanedioate Chemical compound CC(C)COC(=O)CCCC(=O)OCC(C)C UFWRCRCDRAUAAO-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 229940031769 diisobutyl adipate Drugs 0.000 claims description 2
- 239000000975 dye Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000049 pigment Substances 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 2
- IHOYHKVQNJDASX-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS.CO[Si](OC)(OC)CCCS IHOYHKVQNJDASX-UHFFFAOYSA-N 0.000 claims 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims 1
- NFFRXZFAZJCICA-UHFFFAOYSA-N SCCC[Si](OC)(OC)C.SCCC[Si](OC)(OC)C Chemical compound SCCC[Si](OC)(OC)C.SCCC[Si](OC)(OC)C NFFRXZFAZJCICA-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 description 94
- 230000000052 comparative effect Effects 0.000 description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 21
- 238000005530 etching Methods 0.000 description 14
- 238000009835 boiling Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000012965 benzophenone Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 3
- IDQUPXZJURZAGF-ZDUSSCGKSA-N (6as)-2,10,11-trimethoxy-6-methyl-5,6,6a,7-tetrahydro-4h-dibenzo[de,g]quinoline-1-ol Chemical compound CN1CCC2=CC(OC)=C(O)C3=C2[C@@H]1CC1=CC=C(OC)C(OC)=C13 IDQUPXZJURZAGF-ZDUSSCGKSA-N 0.000 description 2
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 2
- 125000006749 (C6-C60) aryl group Chemical group 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- QQOMQLYQAXGHSU-UHFFFAOYSA-N 2,3,6-Trimethylphenol Chemical compound CC1=CC=C(C)C(O)=C1C QQOMQLYQAXGHSU-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- CRBJBYGJVIBWIY-UHFFFAOYSA-N 2-isopropylphenol Chemical compound CC(C)C1=CC=CC=C1O CRBJBYGJVIBWIY-UHFFFAOYSA-N 0.000 description 2
- IFNDEOYXGHGERA-UHFFFAOYSA-N 2-methoxy-5-methylphenol Chemical compound COC1=CC=C(C)C=C1O IFNDEOYXGHGERA-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- MPWGZBWDLMDIHO-UHFFFAOYSA-N 3-propylphenol Chemical compound CCCC1=CC=CC(O)=C1 MPWGZBWDLMDIHO-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- FNYDIAAMUCQQDE-UHFFFAOYSA-N 4-methylbenzene-1,3-diol Chemical compound CC1=CC=C(O)C=C1O FNYDIAAMUCQQDE-UHFFFAOYSA-N 0.000 description 2
- 125000003860 C1-C20 alkoxy group Chemical group 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- RECUKUPTGUEGMW-UHFFFAOYSA-N carvacrol Chemical compound CC(C)C1=CC=C(C)C(O)=C1 RECUKUPTGUEGMW-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- DSTPUJAJSXTJHM-UHFFFAOYSA-N isothymol Natural products CC(C)C1=CC(C)=CC=C1O DSTPUJAJSXTJHM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- BTFQKIATRPGRBS-UHFFFAOYSA-N o-tolualdehyde Chemical compound CC1=CC=CC=C1C=O BTFQKIATRPGRBS-UHFFFAOYSA-N 0.000 description 2
- OIPPWFOQEKKFEE-UHFFFAOYSA-N orcinol Chemical compound CC1=CC(O)=CC(O)=C1 OIPPWFOQEKKFEE-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- HWZREQONUGCFIT-UHFFFAOYSA-N (3-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC=CC(C(=O)C=2C(=C(O)C(O)=CC=2)O)=C1 HWZREQONUGCFIT-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- 125000006376 (C3-C10) cycloalkyl group Chemical group 0.000 description 1
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
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Images
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- C07D285/01—Five-membered rings
- C07D285/02—Thiadiazoles; Hydrogenated thiadiazoles
- C07D285/04—Thiadiazoles; Hydrogenated thiadiazoles not condensed with other rings
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
Description
本發明涉及一種光阻劑組合物以及使用該組合物的金屬圖案的形成方法。 The present invention relates to a photoresist composition and a method for forming a metal pattern using the composition.
目前，正在研發各種各樣的顯示裝置，液晶顯示裝置(liquid crystal display)、有機電致發光顯示裝置(organic electroluminescent display)以及電漿顯示面板(plasma display panel)等平板顯示裝置就是其例。 Currently, various display devices are being developed, and flat panel display devices such as liquid crystal display, organic electroluminescent display, and plasma display panel are examples.
通常，使用於顯示裝置的顯示基板包括：薄膜電晶體，作為驅動各畫素區域的開關元件；連接於所述薄膜電晶體的信號配線；以及畫素電極。所述信號配線包括傳遞閘極驅動信號的閘極線以及與所述閘極線交叉並傳遞資料驅動信號的資料線。 Generally, a display substrate used in a display device includes: a thin film transistor as a switching element for driving each pixel area; a signal wiring connected to the thin film transistor; and a pixel electrode. The signal wiring includes a gate line that transmits a gate driving signal and a data line that crosses the gate line and transmits a data driving signal.
通常，為了形成所述薄膜電晶體、信號配線以及畫素電極，係使用光蝕刻製程。光蝕刻製程在對象層上形成光阻劑圖案，將所述光阻劑圖案用作遮罩而對對象層進行圖案化，從而獲取期望的圖案。 Generally, in order to form the thin film transistor, signal wiring and pixel electrode, a photo-etching process is used. The photoetching process forms a photoresist pattern on the target layer, and uses the photoresist pattern as a mask to pattern the target layer to obtain a desired pattern.
在所述光蝕刻製程中，在所述光阻劑圖案與所述對象層的黏 合力較低時，歪斜(skew)增加，這會導致配線的不良，難於形成金屬圖案。 In the photo-etching process, the adhesion between the photoresist pattern and the target layer When the resultant force is low, skew increases, which may lead to defective wiring and make it difficult to form a metal pattern.
本發明提供一種新型光阻劑組合物以及使用該組合物的金屬圖案的形成方法。 根據一態樣，提供一種光阻劑組合物，其包括：酚醛清漆系樹脂(novolac resin)；二疊氮化物(diazide)系感光性化合物；矽烷(silane)系化合物；第一溶劑；以及第二溶劑，其中，所述矽烷系化合物係選自3-巰基丙基甲基二甲氧基矽烷(3-Mercaptopropylmethyldimethoxysilane)、3-巰基丙基三甲氧基矽烷(3-Mercaptopropyltrimethoxysilane)或其任意組合。 The present invention provides a novel photoresist composition and a method for forming a metal pattern using the composition. According to one aspect, a photoresist composition is provided, which includes: a novolac resin; a diazide-based photosensitive compound; a silane-based compound; a first solvent; Two solvents, wherein the silane compound is selected from 3-Mercaptopropylmethyldimethoxysilane, 3-Mercaptopropyltrimethoxysilane or any combination thereof.
根據另一態樣，提供一種金屬圖案的形成方法，其包括：在基板上形成金屬層的步驟；在所述金屬層上塗布如上所述的光阻劑組合物，從而形成塗層的步驟；對所述塗層進行加熱的步驟；對所述塗層進行曝光的步驟； 部分去除所述塗層，形成光阻劑圖案的步驟；以及將所述光阻劑圖案用作遮罩，對所述金屬層進行圖案化的步驟。 According to another aspect, a method for forming a metal pattern is provided, which includes the step of forming a metal layer on a substrate; and coating the photoresist composition as described above on the metal layer to form a coating; The step of heating the coating; the step of exposing the coating; A step of partially removing the coating layer to form a photoresist pattern; and a step of using the photoresist pattern as a mask to pattern the metal layer.
所述光阻劑組合物包括用化學式1表示的矽烷系化合物，因此與基板之間的黏合力出色，可以減少在蝕刻過程中發生的歪斜(skew)從而形成金屬圖案。 The photoresist composition includes the silane-based compound represented by Chemical Formula 1, and therefore has excellent adhesion to the substrate, and can reduce skew occurring during the etching process to form a metal pattern.
所述光阻劑組合物包括第一溶劑與第二溶劑，因此可以形成厚度均勻且圖案形狀的均勻度出色的金屬圖案。 The photoresist composition includes a first solvent and a second solvent, and therefore can form a metal pattern with a uniform thickness and excellent pattern shape uniformity.
10:基板 10: substrate
20:金屬層 20: Metal layer
25:金屬圖案 25: Metal pattern
30:塗層 30: Coating
35:光阻劑圖案 35: photoresist pattern
LEA:曝光區域 LEA: exposure area
LBA:遮光區域 LBA: shading area
第1圖至第7圖是示意性地顯示根據一實施態樣的金屬圖案的形成方法的圖。 FIG. 1 to FIG. 7 are diagrams schematically showing a method of forming a metal pattern according to an embodiment.
本發明可以進行各種轉換且可以具有多種實施例，將特定實施例例示於附圖中並在詳細說明中具體說明。本發明的效果與特徵以及實現該等的方法，藉由參照在下文中與附圖一同詳細說明的實施例而變得更加明確。但是，本發明並不限定於以下公開的實施例，而可以體現為各種形式。 The present invention can undergo various conversions and can have various embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and the methods for achieving them will become clearer by referring to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be embodied in various forms.
在本說明書中，第一及第二等術語並不具有限定的意義，其使用的目的在於將一個構成要素與其他構成要素區別開。 In this specification, terms such as first and second do not have a limiting meaning, and their purpose is to distinguish one component from other components.
在本說明書中，單數的表述只要在上下文中沒有明確表示不同含義，則包括複數的表述。 In this specification, singular expressions include plural expressions as long as they do not clearly indicate different meanings in the context.
在本說明書中，「包括」或「具有」等術語係表示說明書上記載的特徵或者構成要素的存在，並不預先排除一個以上的其他特徵或者構成要素的附加可能性。 In this specification, terms such as "include" or "have" indicate the existence of the features or constituent elements described in the specification, and do not preclude the possibility of adding more than one other feature or constituent elements in advance.
在本說明書中，光阻劑圖案是在將金屬層圖案化時使用的遮罩，意味著對藉由塗布光阻劑組合物而形成的塗層進行局部曝光而形成的預定的圖案。 In this specification, the photoresist pattern is a mask used when patterning a metal layer, and means a predetermined pattern formed by partially exposing a coating layer formed by applying a photoresist composition.
在本說明書中，金屬圖案意味著使用所述光阻劑圖案並藉由蝕刻製程將金屬層圖案化而形成的預定的圖案。 In this specification, the metal pattern means a predetermined pattern formed by using the photoresist pattern and patterning the metal layer through an etching process.
在本說明書中，沸點意味著在1大氣壓(760毫米Hg)下液態化合物開始向氣態發生相變的溫度。 In this specification, the boiling point means the temperature at which a liquid compound starts to undergo a phase change to a gaseous state under 1 atmosphere (760 mmHg).
在本說明書中，C1-C20烷基意味著碳原子數為1至20的線型或者分枝型脂肪族烴一價(monovalent)基團，具體的示例包含甲基、乙基、丙基、異丁基、二級丁基、三級丁基、戊基、異戊基、己基等。 In this specification, a C 1 -C 20 alkyl group means a linear or branched aliphatic hydrocarbon monovalent group having 1 to 20 carbon atoms, and specific examples include methyl, ethyl, and propyl groups. , Isobutyl, secondary butyl, tertiary butyl, pentyl, isopentyl, hexyl, etc.
在本說明書中，C1-C20烷氧基意味著具有-OA101(其中，A101是上述C1-C20烷基)化學式的一價基團，作為其具體示例包含甲氧基、乙氧基、異丙氧基等。 In this specification, a C 1 -C 20 alkoxy group means a monovalent group having the chemical formula -OA 101 (where A 101 is the aforementioned C 1 -C 20 alkyl group), and specific examples thereof include a methoxy group, Ethoxy, isopropoxy, etc.
在本說明書中，C3-C10環烷基意味著碳原子數為3至10的一價飽和烴單環基團，作為其具體示例，包含環丙基、環丁基、環戊基、環己基、環庚基等。 In this specification, C 3 -C 10 cycloalkyl means a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and specific examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, Cyclohexyl, cycloheptyl, etc.
在本說明書中，C6-C30芳基意味著具有碳原子數為6至30個的碳環芳香族系的一價基團，C6-C60伸芳基意味著具有碳原子數為6至60個的碳環芳香族系的二價(divalent)基團。所述C6-C60芳基的具體例包括苯基、萘基、蒽基、菲基、芘基、
在本說明書中，C1-C30雜芳基意味著將從N、O、Si、P以及S中選擇的至少一個雜原子作為環形成原子而包含且具有碳原子數為1至30個的雜環芳香族系的一價基團。 In this specification, a C 1 -C 30 heteroaryl group means that at least one heteroatom selected from N, O, Si, P, and S is contained as a ring-forming atom and has 1 to 30 carbon atoms. A monovalent group of heterocyclic aromatic series.
在本說明書中，於經取代的C1-C20烷基、經取代的C1-C20烷氧基、經取代的C3-C10環烷基、經取代的C6-C30芳基以及經取代的C1-C30雜芳基的取代基中，至少一個取代基是選自重氫、-F、-Cl、-Br、-I、羥基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基。 In this specification, the substituted C 1 -C 20 alkyl group, the substituted C 1 -C 20 alkoxy group, the substituted C 3 -C 10 cycloalkyl group, the substituted C 6 -C 30 aryl group Among the substituents of the substituted C 1 -C 30 heteroaryl group, at least one substituent is selected from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1- C 10 alkyl, C 1 -C 10 alkoxy, and C 6 -C 20 aryl.
在本說明書中，Q1至Q3彼此係獨立地選自氫、重氫、-F、-Cl、-Br、-I、羥基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基。 In this specification, Q 1 to Q 3 are independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 10 alkyl, C 1 -C 10 alkoxy and C 6 -C 20 aryl.
以下，對根據本發明的一實施態樣的光阻劑組合物進行說明。 Hereinafter, a photoresist composition according to an embodiment of the present invention will be described.
所述光阻劑組合物包括酚醛清漆系樹脂、二疊氮化物系感光性化合物、矽烷系化合物、第一溶劑以及第二溶劑。 The photoresist composition includes a novolak-based resin, a diazide-based photosensitive compound, a silane-based compound, a first solvent, and a second solvent.
所述酚醛清漆系樹脂是黏合劑樹脂，成為所述光阻劑組合物的基本成分(base)，且為鹼溶性。 The novolak resin is a binder resin, which becomes the base of the photoresist composition, and is alkali-soluble.
酚醛清漆系樹脂可以包括酚類化合物與醛類化合物或酮類化合物的縮聚物。例如，酚醛清漆系樹脂可以藉由在酸催化劑下使酚類化合物與醛類化合物或酮類化合物縮聚反應而製造。 The novolak-based resin may include a polycondensate of a phenol-based compound and an aldehyde-based compound or a ketone-based compound. For example, novolak-based resins can be produced by polycondensing a phenolic compound with an aldehyde compound or a ketone compound under an acid catalyst.
酚類化合物可以包括選自酚、鄰甲酚、間甲酚、對甲基苯酚、2,3-二甲基苯酚、3,4-二甲基苯酚、3,5-二甲基苯酚、2,4-二甲基苯酚、2,6-二甲基苯酚、2,3,6-三甲基苯酚、2-三級丁基酚、3-三級丁基酚、4-三級丁基酚、2-甲基間苯二酚、4-甲基間苯二酚、5-甲基間苯二酚、4-三級丁基兒茶酚、2-甲氧基酚、3-甲氧基酚、2-丙基苯酚、3-丙基苯酚、4-丙基苯酚、2-異丙基苯酚、2-甲氧基-5-甲基苯酚、2-三級丁基-5-甲基苯酚、瑞香酚以及異構麝香草酚(isothymol)中的至少一種。 The phenolic compound may include selected from phenol, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2 ,4-Dimethylphenol, 2,6-dimethylphenol, 2,3,6-trimethylphenol, 2-tertiary butylphenol, 3-tertiary butylphenol, 4-tertiary butyl Phenol, 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, 4-tertiarybutylcatechol, 2-methoxyphenol, 3-methoxy Base phenol, 2-propyl phenol, 3-propyl phenol, 4-propyl phenol, 2-isopropyl phenol, 2-methoxy-5-methyl phenol, 2-tertiary butyl-5-methyl At least one of phenylphenol, regenol, and isothymol (isothymol).
醛類化合物可以包括選自甲醛、福馬林、多聚甲醛、三惡烷(trioxane)、乙醛、丙醛、苯甲醛、苯乙醛、α-苯丙醛、β-苯丙醛、鄰羥基苯甲醛、間羥基苯甲醛、對羥基苯甲醛、鄰氯苯甲醛、間氯苯甲醛、對氯苯甲醛、鄰甲基苯甲醛、間甲基苯甲醛、對甲基苯甲醛、對乙基苯甲醛、p-n-丁基苯甲醛以及對苯二甲醛中的至少一種。 Aldehyde compounds may include selected from formaldehyde, formalin, paraformaldehyde, trioxane (trioxane), acetaldehyde, propionaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropanal, β-phenylpropanal, o-hydroxyl Benzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p-ethylbenzene At least one of formaldehyde, pn-butylbenzaldehyde, and terephthalaldehyde.
酮類化合物可以包括選自丙酮、甲基乙基酮、二乙基酮以及二苯基酮的至少一種。 The ketone compound may include at least one selected from the group consisting of acetone, methyl ethyl ketone, diethyl ketone, and benzophenone.
酸催化劑可以從硫酸、鹽酸、甲酸、乙酸以及草酸中選擇。 The acid catalyst can be selected from sulfuric acid, hydrochloric acid, formic acid, acetic acid, and oxalic acid.
根據一實施態樣，酚醛清漆系樹脂包括間甲酚與對甲基苯酚的縮聚物，間甲酚對對甲基苯酚的重量比可以是2：8至8：2。根據另一實施態樣，間甲酚對對甲基苯酚的重量比可以是5：5。如果間甲酚對對甲基苯酚的重量比在所述範圍內，則可以形成厚度均勻、斑點少的光阻劑圖案。 According to an embodiment, the novolak resin includes a condensation polymer of m-cresol and p-cresol, and the weight ratio of m-cresol to p-cresol may be 2:8 to 8:2. According to another embodiment, the weight ratio of m-cresol to p-cresol may be 5:5. If the weight ratio of m-cresol to p-cresol is within the range, a photoresist pattern with uniform thickness and few spots can be formed.
酚醛清漆系樹脂，藉由凝膠滲透層析術(gel permeation chromatography，GPC)測定的單分散聚苯乙烯換算的重量平均分子量可以是1,000至50,000公克/莫耳(g/mol)。根據一實施態樣，酚醛清漆系 樹脂，藉由凝膠滲透層析術(GPC)測定的單分散聚苯乙烯換算的重量平均分子量可以是3,000至20,000公克/莫耳。 For novolac resins, the weight average molecular weight measured by gel permeation chromatography (GPC) in terms of monodisperse polystyrene can be 1,000 to 50,000 grams/mole (g/mol). According to an implementation aspect, the novolac series The weight average molecular weight of the resin in terms of monodisperse polystyrene measured by gel permeation chromatography (GPC) can be 3,000 to 20,000 g/mol.
在酚醛清漆系樹脂的重量平均分子量低於約1,000時，酚醛清漆系樹脂容易溶解於顯影液而受損，在酚醛清漆系樹脂的重量平均分子量超過約50,000時，在形成光阻劑圖案時在曝光的部分與不曝光的部分中對顯影液的溶解度差異較小，因此很難得到鮮明的金屬圖案。 When the weight average molecular weight of the novolak resin is less than about 1,000, the novolak resin is easily dissolved in the developer and is damaged. When the weight average molecular weight of the novolak resin exceeds about 50,000, the photoresist pattern is The difference in solubility to the developer between the exposed part and the unexposed part is small, so it is difficult to obtain a sharp metal pattern.
酚醛清漆系樹脂的含量，相對於組合物的總含量100重量份，可以是5至30重量份。根據一實施態樣，酚醛清漆系樹脂的含量，相對於組合物的總含量100重量份，可以是10至25重量份。在酚醛清漆系樹脂的含量相對於組合物的總含量100重量份低於5重量份時，很難得到鮮明的光阻劑圖案且容易產生斑點，在酚醛清漆系樹脂的含量相對於組合物的總含量100重量份超過30重量份時，金屬圖案對基板的黏合力以及感光度可能會下降。 The content of the novolak resin may be 5 to 30 parts by weight relative to 100 parts by weight of the total content of the composition. According to an embodiment, the content of the novolak resin may be 10 to 25 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the novolak resin is less than 5 parts by weight relative to 100 parts by weight of the total content of the composition, it is difficult to obtain a clear photoresist pattern and spots are likely to occur. The content of the novolak resin is relative to the composition When the total content of 100 parts by weight exceeds 30 parts by weight, the adhesion of the metal pattern to the substrate and the sensitivity may decrease.
所述二疊氮化物系感光性化合物是鹼難溶性，或者曝光時產生酸，且可以相變為鹼溶性。另一方面，所述酚醛清漆系樹脂在與鹼溶性或所述二疊氮化物系感光性化合物混合的狀態下，由於物理相互作用，對鹼的溶解度可能會顯著下降。因此，塗層中曝光區域，由於二疊氮化物系感光性化合物的分解，可能會促進酚醛清漆系樹脂對鹼的溶解，但是，塗層中未曝光的區域，不發生那樣的化學變化作用，因此還殘留為鹼難溶性。 The diazide-based photosensitive compound is poorly soluble in alkali, or generates acid when exposed to light, and can be phase-changed to alkali-soluble. On the other hand, when the novolak-based resin is mixed with an alkali-soluble or diazide-based photosensitive compound, due to physical interaction, the solubility to alkali may be significantly reduced. Therefore, in the exposed area of the coating, the decomposition of the diazide-based photosensitive compound may promote the dissolution of the novolak resin to the alkali. However, the unexposed area in the coating does not undergo such a chemical change. Therefore, it remains poorly soluble in alkali.
例如，二疊氮化物系感光性化合物可以包括醌二疊氮化物類化合物。醌二疊氮化物類化合物可以藉由在弱鹼環境下使二疊氮基萘醌磺酸酯鹵素化合物與酚化合物反應而製造。 For example, the diazide-based photosensitive compound may include a quinonediazide-based compound. The quinonediazide compound can be produced by reacting a diazide naphthoquinone sulfonate halogen compound with a phenol compound in a weak alkaline environment.
所述酚化合物可以包括選自2,3,4-三羥基二苯甲酮、2,4,6-三羥基二苯甲酮、2,3,4,3'-四羥基二苯甲酮、2,3,4,4'-四羥基二苯甲酮、三(對羥基苯基)甲烷、1,1,1-三(對羥基苯基)乙烷以及4,4'-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]亞乙烯基]聯苯酚中的至少一種。 The phenolic compound may include selected from 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, tris(p-hydroxyphenyl)methane, 1,1,1-tris(p-hydroxyphenyl)ethane and 4,4'-[1-[ At least one of 4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]vinylidene]biphenol.
所述二疊氮基萘醌磺酸酯鹵素化合物可以包括選自1,2-二疊氮基萘醌4-磺酸酯、1,2-二疊氮基萘醌5-磺酸酯以及1,2-二疊氮基萘醌6-磺酸酯中的至少一種。 The diazide naphthoquinone sulfonate halogen compound may include selected from 1,2-diazide naphthoquinone 4-sulfonate, 1,2-diazide naphthoquinone 5-sulfonate, and 1 , At least one of 2-diazide naphthoquinone 6-sulfonate.
根據一實施態樣，二疊氮化物系感光性化合物可以包括選自2,3,4-三羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯以及2,3,4,4'-四羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯中的至少一種。作為二疊氮化物系感光性化合物而使用2,3,4-三羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯以及2,3,4,4'-四羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯的混合物時，2,3,4-三羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯與2,3,4,4'-四羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯的重量比可以是2：8至5：5。 According to one embodiment, the diazide-based photosensitive compound may include 2,3,4-trihydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate and 2, At least one of 3,4,4'-tetrahydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate. As a diazide-based photosensitive compound, 2,3,4-trihydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate and 2,3,4,4'- are used When the mixture of tetrahydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate, 2,3,4-trihydroxybenzophenone-1,2-diazide naphthoquinone The weight ratio of -5-sulfonate to 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate can be 2:8 to 5: 5.
二疊氮化物系感光性化合物的含量，相對於組合物的總含量100重量份，可以是2至10重量份。根據一實施態樣，二疊氮化物系感光性化合物的含量，相對於組合物的總含量100重量份，可以是5至8重量份。在二疊氮化物系感光性化合物的含量相對於組合物的總含量100重量份不足2重量份時，塗層中曝光部分的溶解度增加，無法形成光阻劑圖案，在二疊氮化物系感光性化合物的含量相對於組合物的總含量100重量份超過10重量份時，塗層中曝光部分的溶解度減少，從而無法藉由鹼性顯影液進行顯影。 The content of the diazide-based photosensitive compound may be 2 to 10 parts by weight with respect to 100 parts by weight of the total content of the composition. According to one embodiment, the content of the diazide-based photosensitive compound may be 5 to 8 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the diazide-based photosensitive compound is less than 2 parts by weight relative to 100 parts by weight of the total content of the composition, the solubility of the exposed part in the coating layer increases, and the photoresist pattern cannot be formed. When the content of the sexual compound exceeds 10 parts by weight relative to 100 parts by weight of the total content of the composition, the solubility of the exposed portion in the coating layer is reduced, and development with an alkaline developer is impossible.
矽烷系化合物係提高光阻劑組合物的黏合性，從而發揮提高由光阻劑組合物形成的光阻劑圖案對基板的黏合性的作用。 The silane-based compound improves the adhesiveness of the photoresist composition, thereby playing a role in improving the adhesiveness of the photoresist pattern formed from the photoresist composition to the substrate.
矽烷系化合物可以包括3-巰基丙基甲基二甲氧基矽烷(3-Mercaptopropylmethyldimethoxysilane)、3-巰基丙基三甲氧基矽烷(3-Mercaptopropyltrimethoxysilane)或其任意組合。 The silane-based compound may include 3-Mercaptopropylmethyldimethoxysilane, 3-Mercaptopropyltrimethoxysilane, or any combination thereof.
矽烷系化合物的含量，相對於組合物的總含量100重量份，可以是0.01至0.25重量份。根據一實施態樣，矽烷系化合物的含量，相對於組合物的總含量100重量份，可以是0.05至0.2重量份。在矽烷系化合物的含量相對於組合物的總含量100重量份低於0.01重量份時，金屬圖案對基板的黏合力可能會下降，在矽烷系化合物的含量相對於組合物的總含量100重量份超過0.1重量份時，很難得到鮮明的金屬圖案。 The content of the silane-based compound may be 0.01 to 0.25 parts by weight relative to 100 parts by weight of the total content of the composition. According to an embodiment, the content of the silane-based compound may be 0.05 to 0.2 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the silane-based compound is less than 0.01 parts by weight relative to 100 parts by weight of the total content of the composition, the adhesion of the metal pattern to the substrate may decrease. The content of the silane-based compound is relative to 100 parts by weight of the total content of the composition. When it exceeds 0.1 parts by weight, it is difficult to obtain a clear metal pattern.
第一溶劑係發揮藉由提高光阻劑組合物的溶解度而使光阻劑層的形成變得容易的作用，沸點可以是110℃至190℃。第一溶劑的沸點比較低，所以具有較高的揮發性，在形成光阻劑層時，可以藉由乾燥製程容易去除，據此可以縮短製程時間。根據一實施態樣，第一溶劑的沸點可以是119℃至172℃。 The first solvent functions to facilitate the formation of the photoresist layer by increasing the solubility of the photoresist composition, and the boiling point may be 110°C to 190°C. The first solvent has a relatively low boiling point and therefore has a relatively high volatility. When the photoresist layer is formed, it can be easily removed by a drying process, thereby shortening the process time. According to an embodiment, the boiling point of the first solvent may be 119°C to 172°C.
根據一實施態樣，第一溶劑可以包括選自丙二醇單甲醚醋酸酯(PGMEA)、苯甲醇、2-甲烷氧基乙基乙酯、丙二醇單甲醚、甲基乙基酮、甲基異丁基酮以及1-甲基-2-吡咯烷酮中的至少一種。根據又一實施態樣，第一溶劑可以選自丙二醇單甲醚醋酸酯(PGMEA)以及苯甲醇。 According to an embodiment, the first solvent may include selected from the group consisting of propylene glycol monomethyl ether acetate (PGMEA), benzyl alcohol, 2-methoxyethyl ethyl, propylene glycol monomethyl ether, methyl ethyl ketone, and methyl isopropyl ether. At least one of butyl ketone and 1-methyl-2-pyrrolidone. According to another embodiment, the first solvent may be selected from propylene glycol monomethyl ether acetate (PGMEA) and benzyl alcohol.
第一溶劑的含量，相對於組合物的總含量100重量份，可以是65至90重量份。根據一實施態樣，第一溶劑的含量，相對於組合物的 總含量100重量份，可以是70至85重量份。在第一溶劑的含量相對於組合物的總含量100重量份低於65重量份時，光阻劑組合物的溶解度可能會下降，在第一溶劑的含量相對於組合物的總含量100重量份超過90重量份時，在光阻劑圖案中可能會產生斑點。 The content of the first solvent may be 65 to 90 parts by weight relative to 100 parts by weight of the total content of the composition. According to one embodiment, the content of the first solvent is relative to the content of the composition The total content is 100 parts by weight and can be 70 to 85 parts by weight. When the content of the first solvent is less than 65 parts by weight relative to 100 parts by weight of the total content of the composition, the solubility of the photoresist composition may decrease, and the content of the first solvent is relative to 100 parts by weight of the total content of the composition. When it exceeds 90 parts by weight, spots may be generated in the photoresist pattern.
第二溶劑係發揮在將光阻劑組合物塗布到基板時使厚度均勻且防止發生斑點以及倒錐現象的作用，沸點可以是200℃至400℃。根據一實施態樣，第二溶劑的沸點可以是216℃至255℃。 The second solvent system plays a role of making the thickness uniform and preventing the occurrence of spots and inverted cones when the photoresist composition is applied to the substrate, and the boiling point can be 200°C to 400°C. According to an implementation aspect, the boiling point of the second solvent may be 216°C to 255°C.
根據一實施態樣，第二溶劑可以包括選自二乙二醇二丁醚(DBDG)、三乙二醇二甲醚(DMTG)、戊二酸二甲酯、己二酸二甲酯、二甲基-2-戊二酸二甲酯、丁二酸二甲酯、己二酸二異丁酯、戊二酸二異丁酯以及丁二酸二異丁酯中的至少一種。根據另一實施態樣，第二溶劑可以選自二甲基-2-戊二酸二甲酯、己二酸二甲酯以及丁二酸二異丁酯。 According to an embodiment, the second solvent may include selected from the group consisting of diethylene glycol dibutyl ether (DBDG), triethylene glycol dimethyl ether (DMTG), dimethyl glutarate, dimethyl adipate, and diethylene glycol dimethyl ether (DMTG). At least one of dimethyl methyl-2-glutarate, dimethyl succinate, diisobutyl adipate, diisobutyl glutarate, and diisobutyl succinate. According to another embodiment, the second solvent may be selected from dimethyl dimethyl-2-glutarate, dimethyl adipate, and diisobutyl succinate.
第二溶劑的含量，相對於組合物的總含量100重量份，可以是1至25重量份。根據一實施態樣，第二溶劑的含量，相對於組合物的總含量100重量份，可以是2至20重量份。在第二溶劑的含量相對於組合物的總含量100重量份低於1重量份時，光阻劑層金屬圖案可能會出現斑點，在第二溶劑的含量相對於組合物的總含量100重量份超過25重量份時，乾燥時間增加，製程時間會變長。 The content of the second solvent may be 1 to 25 parts by weight relative to 100 parts by weight of the total content of the composition. According to an embodiment, the content of the second solvent may be 2 to 20 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the second solvent is less than 1 part by weight relative to 100 parts by weight of the total content of the composition, spots may appear in the metal pattern of the photoresist layer, and the content of the second solvent is relative to 100 parts by weight of the total content of the composition. When it exceeds 25 parts by weight, the drying time increases and the process time becomes longer.
光阻劑組合物還可以包括添加劑，添加劑包括選自著色劑、分散劑、抗氧化劑、紫外線吸收劑、表面活性劑、均化劑、塑化劑、填料、顏料以及染料中的至少一種。 The photoresist composition may further include additives, and the additives include at least one selected from the group consisting of colorants, dispersants, antioxidants, ultraviolet absorbers, surfactants, leveling agents, plasticizers, fillers, pigments, and dyes.
分散劑可以包括高分子型、非離子型、陰離子型或者陽離子 型分散劑。例如，分散劑可以包括選自聚亞烷二醇(polyalkylene glycol)以及其酯、聚氧化烯多元醇、酯氧化烯(ester alkylene oxide)酯烯化氧加合物(ester alkylene oxide adducts)、磺酸酯、磺酸鹽、羧酸酯、羧酸鹽、烷基醯胺烯化氧加合物以及烷基胺中的至少一種。 Dispersants can include polymer, non-ionic, anionic or cationic Type dispersant. For example, the dispersant may include selected from polyalkylene glycol and its ester, polyoxyalkylene polyol, ester alkylene oxide (ester alkylene oxide adducts), sulfonate At least one of acid ester, sulfonate, carboxylate, carboxylate, alkyl amine alkylene oxide adduct, and alkyl amine.
抗氧化劑可以包括選自2,2-硫代雙(4-甲基-6-三級丁基酚)以及2,6-二三級丁基酚中的至少一種。 The antioxidant may include at least one selected from 2,2-thiobis(4-methyl-6-tertiary butyl phenol) and 2,6-di-tertiary butyl phenol.
紫外線吸收劑可以包括選自2-(3-三級丁基-5-甲基-2-羥基苯基)-5-氯-苯并三唑以及烷氧基苯甲酮(Alkoxy benzophenone)中的至少一種。 The ultraviolet absorber may include selected from 2-(3-tertiary butyl-5-methyl-2-hydroxyphenyl)-5-chloro-benzotriazole and alkoxy benzophenone (Alkoxy benzophenone) At least one.
表面活性劑係發揮改善與基板之間的塗布性的作用，可以使用氟系表面活性劑或者矽系表面活性劑。 The surfactant system plays a role of improving the coatability with the substrate, and a fluorine-based surfactant or a silicon-based surfactant can be used.
添加劑的含量，相對於組合物的總含量100重量份，可以是0.01至30重量份。 The content of the additive may be 0.01 to 30 parts by weight relative to 100 parts by weight of the total content of the composition.
光阻劑組合物可以藉由在第一溶劑與第二溶劑的混合溶液中混合酚醛清漆系樹脂、二疊氮化物系感光性化合物以及用化學式1表示的矽烷系化合物來製造。例如，光阻劑組合物可以藉由將酚醛清漆系樹脂、二疊氮化物系感光性化合物以及用化學式1表示的矽烷系化合物投入到包含第一溶劑與第二溶劑的混合溶劑的攪拌機後在40至80℃的溫度下攪拌而製造。 The photoresist composition can be manufactured by mixing a novolak-based resin, a diazide-based photosensitive compound, and a silane-based compound represented by Chemical Formula 1 in a mixed solution of the first solvent and the second solvent. For example, the photoresist composition can be prepared by adding a novolak-based resin, a diazide-based photosensitive compound, and a silane-based compound represented by Chemical Formula 1 to a mixer containing a mixed solvent of the first solvent and the second solvent. It is manufactured by stirring at a temperature of 40 to 80°C.
以下，參照附圖說明利用根據本發明的一實施態樣的光阻劑組合物的金屬圖案的形成方法。 Hereinafter, a method of forming a metal pattern using a photoresist composition according to an embodiment of the present invention will be described with reference to the accompanying drawings.
第1圖至第7圖是示意性地顯示根據本發明的一實施態樣的金屬圖案的形成方法的圖。 Figures 1 to 7 are diagrams schematically showing a method of forming a metal pattern according to an embodiment of the present invention.
參照第1圖，在基板10上形成金屬層20。所述金屬層20可以包括銅、鉻、鋁、鉬、鎳、錳、鈦、銀或其合金。根據一實施態樣，金屬層20可以包括銅。
Referring to FIG. 1, a
另外，金屬層20可以具有單層結構或者包括彼此不同的金屬層的多層結構。例如，金屬層20可以包括銅層以及配置於銅層下方的鈦層，或者可以包括銅層以及配置於銅層下方的錳層。另外，在金屬層20與基板10之間還可以形成有包括銦氧化物、錫氧化物、鋅氧化物、銦鋅氧化物、銦錫氧化物、銦鎵氧化物、銦鎵鋅氧化物等的金屬氧化物層。例如，銅層的厚度可以是約1,000埃至約30,000埃，鈦層以及金屬氧化物層的厚度可以是約100埃至約500埃。
In addition, the
參照第2圖，在金屬層20上塗布光阻劑組合物形成塗層30。對光阻劑組合物的說明參照本說明書的記載。
Referring to FIG. 2, a photoresist composition is coated on the
光阻劑組合物可以藉由如旋塗法、狹縫塗布法、浸塗法、噴塗法或者印刷法等通常的塗布方法而塗布到金屬層20上。
The photoresist composition can be applied to the
例如，在藉由狹縫塗布法塗布光阻劑組合物時，塗布速度可以是10至400毫米/秒(mm/s)。 For example, when the photoresist composition is coated by a slit coating method, the coating speed may be 10 to 400 millimeters per second (mm/s).
接著，在真空室內，在0.5至3.0托(Torr)的壓力下，對塗層30進行減壓乾燥30秒至100秒。藉由減壓乾燥，可以部分去除塗層中的溶劑。
Next, in a vacuum chamber, the
參照第3圖，為了預烘乾，對形成有塗層30的基板10加熱。
為了預烘乾，在加熱板(heat plate)中，可以在約80℃至約120℃的溫度下，對基板10加熱約30秒至約100秒。
Referring to Fig. 3, for pre-baking, the
藉由預烘乾，進一步去除塗層中的溶劑，可以提高塗層30的形狀穩定性。
By pre-drying, the solvent in the coating is further removed, and the shape stability of the
參照第4圖，向塗層30照射具有400奈米至500奈米的波長的光1至20秒，使其部分曝光。為了塗層30的部分曝光，可以使用具有與曝光區域(LEA)對應的透光層以及與遮光區域(LBA)對應的遮光層的遮罩。作為曝光方法可以利用高壓水銀燈、氙燈、碳弧燈、鹵素燈、影印機用冷陰極管、LED、半導體鐳射等習知的手段。
Referring to Fig. 4, the
例如，在光阻劑組合物為正型(positive)時，在與曝光區域(LEA)對應的塗層30中，感光性化合物被活性化，對顯影液的溶解度增加。
For example, when the photoresist composition is positive, the photosensitive compound is activated in the
參照第5圖，向曝光的塗層30施加顯影液而部分去除塗層30。顯影液可以使用氫氧化鈉、氫氧化鉀等鹼金屬或者鹼土金屬的氫氧化物；乙胺、正丙胺等一級胺類；二乙胺、二正丙胺等二級胺類；三甲胺、甲基二乙胺、二甲基乙胺等三級胺類；二甲基乙醇胺、甲基二乙醇氨、三乙醇胺等三級醇胺類；吡咯、哌啶、N-甲基哌啶、n-甲基吡咯烷、1,8-二氮雜二環[5,4,0]-7-十一碳烯、1,5-二氮雜二環[4,3,0]-5-壬烯等環狀三級胺類；吡啶、紫堇定酚(Corydine)、二甲基吡啶、喹啉(quinoline)等芳香族三級胺類；四甲基氫氧化銨、四乙基氫氧化銨等四級銨鹽的水溶液等。根據一實施態樣，作為顯影液可以使用四甲基氫氧化銨水溶液。
Referring to Fig. 5, a developer is applied to the exposed
在光阻劑組合物為正型時，與曝光區域(LEA)對應的塗層
30被去除，下方的金屬層20裸露，與遮光區域(LBA)對應的塗層30係殘留，形成光阻劑圖案35。
When the photoresist composition is positive, the coating corresponding to the exposed area (LEA)
30 is removed, the
參照第6圖以及第7圖，將光阻劑圖案35用作遮罩對金屬層20進行圖案化，形成金屬圖案25，然後去除光阻劑圖案35。因此，金屬圖案25具有與光阻劑圖案35對應的形狀。
Referring to FIGS. 6 and 7, the
對金屬層20的圖案化，可以藉由利用蝕刻液的濕法蝕刻來進行，蝕刻液的成分可以根據金屬層20所包含的物質而不同。例如，在金屬層20包括銅時，蝕刻液可以包括磷酸、醋酸、硝酸以及水，還可以包括磷酸鹽、醋酸鹽、硝酸鹽、金屬氟化酸等。
The patterning of the
在金屬層20具有多層結構時，例如，在金屬層20包括銅層以及位於銅層下方的鈦層時，銅層以及鈦層可以藉由相同的蝕刻液蝕刻或者藉由分別不同的蝕刻液蝕刻。
When the
另外，在金屬層20的下方形成有金屬氧化物層時，金屬氧化層可以藉由與金屬層相同的蝕刻液一起蝕刻，或者藉由分別不同的蝕刻液蝕刻。
In addition, when a metal oxide layer is formed under the
形成有利用了根據本發明的一實施態樣的光阻劑組合物的金屬圖案的基板，係可以用作液晶顯示裝置的顯示基板或者有機電致發光裝置的顯示基板等。 The substrate formed with the metal pattern using the photoresist composition according to one embodiment of the present invention can be used as a display substrate of a liquid crystal display device or a display substrate of an organic electroluminescence device.
光阻劑組合物包括用化學式1表示的矽烷系化合物，因此與基板之間的黏合力出色，可以減少在蝕刻過程中發生的歪斜從而形成金屬圖案，光阻劑組合物包括第一溶劑以及第二溶劑，因此可以形成厚度均勻且圖案形狀的均勻度出色的金屬圖案。因此，在薄膜電晶體、信號線等的 形成過程中，可以縮短光蝕刻製程的時間，改善製程的可靠性。 The photoresist composition includes the silane-based compound represented by Chemical Formula 1, so it has excellent adhesion to the substrate and can reduce the distortion that occurs during the etching process to form a metal pattern. The photoresist composition includes a first solvent and a second solvent. Since it is two solvents, it is possible to form a metal pattern with a uniform thickness and excellent pattern shape uniformity. Therefore, in thin film transistors, signal lines, etc. During the formation process, the time of the photoetching process can be shortened, and the reliability of the process can be improved.
以下，列舉實施例更加具體地說明根據本發明的一實施態樣的光阻劑組合物。 Hereinafter, examples are given to more specifically illustrate the photoresist composition according to an embodiment of the present invention.
製造例1 Manufacturing example 1
將作為酚醛清漆系樹脂將間甲酚與對甲基苯酚以5：5的重量比混合的單體混合物在草酸催化劑下與甲醛進行縮聚反應而得的重量平均分子量為3,000至30,000公克/莫耳的酚醛清漆系樹脂200公克、作為二疊氮化物系感光性化合物以3：7的重量比包含2,3,4-三羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯以及2,3,4,4'-四羥基二苯甲酮-1,2-二疊氮基萘醌-5-磺酸酯的混合物48公克、以及作為矽烷系化合物的3-巰基丙基甲基二甲氧基矽烷1.00公克添加到作為第一溶劑的丙二醇單甲醚醋酸酯(PGMEA)(沸點：146℃、黏度：1至1.2cP)1598公克以及作為第二溶劑的戊二酸二甲酯(沸點：222至224℃、黏度：2至3cP)56公克中之後進行攪拌，從而製造了光阻劑組合物。 The weight-average molecular weight of a monomer mixture in which meta-cresol and p-cresol are mixed in a weight ratio of 5:5 as a novolac resin and formaldehyde is polycondensed under an oxalic acid catalyst. The weight average molecular weight is 3,000 to 30,000 g/mole 200 grams of the novolak resin, containing 2,3,4-trihydroxybenzophenone-1,2-diazide naphthoquinone-5 as a diazide-based photosensitive compound in a weight ratio of 3:7 -48 grams of a mixture of sulfonate and 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazide naphthoquinone-5-sulfonate, and 3- as a silane-based compound 1.00 g of mercaptopropyl methyl dimethoxysilane was added to 1598 g of propylene glycol monomethyl ether acetate (PGMEA) as the first solvent (boiling point: 146°C, viscosity: 1 to 1.2 cP), and 1598 g as the second solvent. Dimethyl diacid (boiling point: 222 to 224° C., viscosity: 2 to 3 cP) was stirred in 56 grams, thereby manufacturing a photoresist composition.
製造例2 Manufacturing example 2
除了作為第一溶劑用1523公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、作為第二溶劑用131公克的戊二酸二甲酯替代56公克的戊二酸二甲酯之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except as the first solvent, 1523 grams of propylene glycol monomethyl ether acetate (PGMEA) was used instead of 1598 grams of propylene glycol monomethyl ether acetate (PGMEA), and 131 grams of dimethyl glutarate was used as the second solvent to replace 56 grams of propylene glycol monomethyl ether acetate (PGMEA). The photoresist composition was produced by the same method as in Production Example 1, except for dimethyl glutarate.
製造例3 Manufacturing example 3
除了作為第一溶劑用1448公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、作為第二溶劑用206公克的戊二酸二甲酯替代56公克的戊二酸二甲酯之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except as the first solvent, 1448 grams of propylene glycol monomethyl ether acetate (PGMEA) was used instead of 1598 grams of propylene glycol monomethyl ether acetate (PGMEA), and as the second solvent, 206 grams of dimethyl glutarate was used instead of 56 grams. The photoresist composition was produced by the same method as in Production Example 1, except for dimethyl glutarate.
製造例4 Manufacturing example 4
除了作為第一溶劑用1372公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、作為第二溶劑用282公克的戊二酸二甲酯替代56公克的戊二酸二甲酯之外，利用與製造例1相同的方法製造了光阻劑組合物。 In addition to using 1372 grams of propylene glycol monomethyl ether acetate (PGMEA) as the first solvent to replace 1598 grams of propylene glycol monomethyl ether acetate (PGMEA), as the second solvent, 282 grams of dimethyl glutarate was used to replace 56 grams of propylene glycol monomethyl ether acetate (PGMEA). The photoresist composition was produced by the same method as in Production Example 1, except for dimethyl glutarate.
製造例5 Manufacturing example 5
除了作為矽烷系化合物使用0.25公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 0.25 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, it was produced in the same manner as in Production Example 1. Photoresist composition.
製造例6 Manufacturing example 6
除了作為矽烷系化合物使用0.50公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，使用與製造例1相同的方法製造了光阻劑組合物。 Except that 0.50 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, the same method as in Production Example 1 was used. Photoresist composition.
製造例7 Manufacturing example 7
除了作為矽烷系化合物使用1.00公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 1.00 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, it was produced in the same manner as in Production Example 1. Photoresist composition.
製造例8 Manufacturing example 8
除了作為矽烷系化合物使用1.50公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 1.50 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, it was manufactured in the same manner as in Manufacturing Example 1. Photoresist composition.
製造例9 Manufacturing example 9
除了作為矽烷系化合物使用2.50公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 2.50 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, it was produced in the same manner as in Production Example 1. Photoresist composition.
製造例10 Manufacturing example 10
除了作為矽烷系化合物使用3.75公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 3.75 g of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, it was produced in the same manner as in Production Example 1. Photoresist composition.
比較製造例1 Comparative Manufacturing Example 1
除了作為第一溶劑用1654公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、不使用作為第二溶劑的戊二酸二甲酯之外，利用與製造例1相同的方法製造了光阻劑組合物。 In addition to replacing 1598 grams of propylene glycol monomethyl ether acetate (PGMEA) with 1654 grams of propylene glycol monomethyl ether acetate (PGMEA) as the first solvent, and not using dimethyl glutarate as the second solvent, the use of The photoresist composition was produced in the same manner as in Production Example 1.
比較製造例2 Comparative Manufacturing Example 2
除了作為第一溶劑使用1523公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、作為第二溶劑用乳酸乙酯(沸點：151至155℃)131公克替代戊二酸二甲酯56 公克之外，利用與製造例1相同的方法製造了光阻劑組合物。 In addition to using 1523 grams of propylene glycol monomethyl ether acetate (PGMEA) as the first solvent instead of 1598 grams of propylene glycol monomethyl ether acetate (PGMEA), and 131 grams of ethyl lactate (boiling point: 151 to 155°C) as the second solvent Substitute for dimethyl glutarate 56 Except for the grams, a photoresist composition was produced in the same manner as in Production Example 1.
比較製造例3 Comparative Manufacturing Example 3
除了作為第一溶劑使用1523公克的丙二醇單甲醚醋酸酯(PGMEA)替代1598公克的丙二醇單甲醚醋酸酯(PGMEA)、作為第二溶劑用乳酸乙酯(沸點：151至155℃)282公克替代戊二酸二甲酯56公克之外，利用與製造例1相同的方法製造了光阻劑組合物。 In addition to using 1523 grams of propylene glycol monomethyl ether acetate (PGMEA) as the first solvent instead of 1598 grams of propylene glycol monomethyl ether acetate (PGMEA), and 282 grams of ethyl lactate (boiling point: 151 to 155°C) as the second solvent A photoresist composition was produced by the same method as in Production Example 1, except that 56 g of dimethyl glutarate was replaced.
比較製造例4 Comparative Manufacturing Example 4
除了未使用作為矽烷系化合物的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 A photoresist composition was produced by the same method as in Production Example 1, except that 3-mercaptopropylmethyldimethoxysilane which is a silane-based compound was not used.
比較製造例5 Comparative Manufacturing Example 5
除了作為矽烷系化合物使用5.00公克的3-巰基丙基甲基二甲氧基矽烷替代1.00公克的3-巰基丙基甲基二甲氧基矽烷之外，利用與製造例1相同的方法製造了光阻劑組合物。 Except that 5.00 grams of 3-mercaptopropylmethyldimethoxysilane was used as the silane-based compound instead of 1.00 grams of 3-mercaptopropylmethyldimethoxysilane, it was produced in the same manner as in Production Example 1. Photoresist composition.
實施例1 Example 1
在將製造例1中製造的光阻劑組合物狹縫塗布到在其上部形成有橫400毫米×縱300毫米大小的銅層的玻璃基板之後，在0.5托的壓力下減壓乾燥60秒，並在110℃下加熱基板150秒，從而形成1.90微米厚度的塗層。 After slit-coating the photoresist composition produced in Production Example 1 on a glass substrate on which a copper layer of 400 mm wide by 300 mm long was formed, it was dried under reduced pressure under a pressure of 0.5 Torr for 60 seconds, The substrate was heated at 110°C for 150 seconds to form a coating with a thickness of 1.90 microns.
接著，使用曝光機(MA6，Karl Suss公司製造)向塗層照射具有365至436奈米的波長的光1秒，從而使塗層部分曝光，向經曝光的塗層施加包括四甲基氫氧化銨的水溶液約60秒，從而形成了光阻劑圖 案。 Next, an exposure machine (MA6, manufactured by Karl Suss) was used to irradiate the coating with light having a wavelength of 365 to 436 nm for 1 second, thereby partially exposing the coating, and applying tetramethylhydroxide to the exposed coating The aqueous solution of ammonium is about 60 seconds to form a photoresist pattern case.
實施例2 Example 2
除了在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 A photoresist pattern was formed by the same method as in Example 1, except for drying under reduced pressure under a pressure of 1.0 Torr.
實施例3 Example 3
除了在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 A photoresist pattern was formed by the same method as in Example 1, except for drying under reduced pressure under a pressure of 1.5 Torr.
實施例4 Example 4
除了在3.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 A photoresist pattern was formed by the same method as in Example 1, except for drying under reduced pressure under a pressure of 3.0 Torr.
實施例5 Example 5
除了替代在製造例1中製造的光阻劑組合物而使用在製造例2中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 2 was used instead of the photoresist composition manufactured in Manufacturing Example 1, a photoresist pattern was formed by the same method as in Example 1.
實施例6 Example 6
除了替代在製造例1中製造的光阻劑組合物而使用在製造例2中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 2 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 1.0 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例7 Example 7
除了替代在製造例1中製造的光阻劑組合物而使用在製造 例2中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to replacing the photoresist composition manufactured in Manufacturing Example 1, it is used in manufacturing The photoresist composition manufactured in Example 2 was dried under reduced pressure under a pressure of 1.5 Torr, and a photoresist pattern was formed by the same method as in Example 1.
實施例8 Example 8
除了替代在製造例1中製造的光阻劑組合物而使用在製造例2中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 2 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 3.0 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例9 Example 9
除了替代在製造例1中製造的光阻劑組合物而使用在製造例3中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 3 was used instead of the photoresist composition manufactured in Manufacturing Example 1, a photoresist pattern was formed by the same method as in Example 1.
實施例10 Example 10
除了替代在製造例1中製造的光阻劑組合物而使用在製造例3中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 3 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 1.0 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例11 Example 11
除了替代在製造例1中製造的光阻劑組合物而使用在製造例3中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 3 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 1.5 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例12 Example 12
除了替代在製造例1中製造的光阻劑組合物而使用在製造例3中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之外， 利用與實施例1相同的方法形成了光阻劑圖案。 Except for using the photoresist composition manufactured in Manufacturing Example 3 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 3.0 Torr, The photoresist pattern was formed by the same method as in Example 1.
實施例13 Example 13
除了替代在製造例1中製造的光阻劑組合物而使用在製造例4中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 4 was used instead of the photoresist composition manufactured in Manufacturing Example 1, a photoresist pattern was formed by the same method as in Example 1.
實施例14 Example 14
除了替代在製造例1中製造的光阻劑組合物而使用在製造例4中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 4 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 1.0 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例15 Example 15
除了替代在製造例1中製造的光阻劑組合物而使用在製造例4中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 4 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 1.5 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例16 Example 16
除了替代在製造例1中製造的光阻劑組合物而使用在製造例4中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Manufacturing Example 4 was used instead of the photoresist composition manufactured in Manufacturing Example 1, and the reduced pressure drying was performed under a pressure of 3.0 Torr, the same as in Example 1 was used. The method forms the photoresist pattern.
實施例17 Example 17
在將製造例5中製造的光阻劑組合物狹縫塗布到在其上部形成有橫400毫米×縱300毫米大小的銅層的玻璃基板之後，在0.5托的壓力下減壓乾燥60秒，並在110℃下加熱基板150秒，從而形成1.90微米 厚度的塗層。 After slit-coating the photoresist composition produced in Production Example 5 on a glass substrate on which a copper layer of 400 mm wide by 300 mm long was formed, it was dried under reduced pressure under a pressure of 0.5 Torr for 60 seconds, And heat the substrate at 110°C for 150 seconds to form 1.90 microns Thickness of the coating.
接著，使用曝光機(MA6，Karl Suss公司製造)向塗層照射具有365至436奈米的波長的光1秒，從而使塗層部分曝光，向經曝光的塗層施加包括四甲基氫氧化銨的水溶液約60秒，從而形成了光阻劑圖案。 Next, an exposure machine (MA6, manufactured by Karl Suss) was used to irradiate the coating with light having a wavelength of 365 to 436 nm for 1 second, thereby partially exposing the coating, and applying tetramethylhydroxide to the exposed coating The aqueous solution of ammonium is about 60 seconds, thereby forming a photoresist pattern.
接著，用蝕刻液(TCE-J100，DONGJIN SEMICHEM股份有限公司)蝕刻裸露的銅層而形成了金屬圖案。 Next, the exposed copper layer was etched with an etching solution (TCE-J100, DONGJIN SEMICHEM Co., Ltd.) to form a metal pattern.
實施例18 Example 18
除了替代在製造例5中製造的光阻劑組合物而使用在製造例6中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Manufacturing Example 6 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
實施例19 Example 19
除了替代在製造例5中製造的光阻劑組合物而使用在製造例7中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Manufacturing Example 7 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
實施例20 Example 20
除了替代在製造例5中製造的光阻劑組合物而使用在製造例8中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Manufacturing Example 8 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
實施例21 Example 21
除了替代在製造例5中製造的光阻劑組合物而使用在製造 例9中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 In addition to replacing the photoresist composition manufactured in Manufacturing Example 5, it is used in manufacturing Except for the photoresist composition manufactured in Example 9, a metal pattern was formed by the same method as in Example 17.
實施例22 Example 22
除了替代在製造例5中製造的光阻劑組合物而使用在製造例10中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Manufacturing Example 10 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
比較例1 Comparative example 1
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例1中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 A photoresist pattern was formed by the same method as in Example 1, except that the photoresist composition manufactured in Comparative Manufacturing Example 1 was used instead of the photoresist composition manufactured in Manufacturing Example 1.
比較例2 Comparative example 2
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例1中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 1 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.0 Torr, the same as in Example 1 was used. The same method forms the photoresist pattern.
比較例3 Comparative example 3
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例1中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 1 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.5 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例4 Comparative example 4
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例1中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之 外，利用與實施例1相同的方法形成了光阻劑圖案。 Except for replacing the photoresist composition manufactured in Manufacturing Example 1, the photoresist composition manufactured in Comparative Manufacturing Example 1 was used, and it was dried under reduced pressure under a pressure of 3.0 Torr. In addition, a photoresist pattern was formed by the same method as in Example 1.
比較例5 Comparative example 5
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例2中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Comparative Manufacturing Example 2 was used instead of the photoresist composition manufactured in Manufacturing Example 1, a photoresist pattern was formed by the same method as in Example 1.
比較例6 Comparative example 6
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例2中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except for using the photoresist composition manufactured in Comparative Manufacturing Example 2 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.0 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例7 Comparative example 7
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例2中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 2 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.5 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例8 Comparative example 8
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例2中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 2 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 3.0 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例9 Comparative example 9
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例3中製造的光阻劑組合物之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except that the photoresist composition manufactured in Comparative Manufacturing Example 3 was used instead of the photoresist composition manufactured in Manufacturing Example 1, a photoresist pattern was formed by the same method as in Example 1.
比較例10 Comparative example 10
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例3中製造的光阻劑組合物，並在1.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 3 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.0 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例11 Comparative example 11
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例3中製造的光阻劑組合物，並在1.5托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 In addition to using the photoresist composition manufactured in Comparative Manufacturing Example 3 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 1.5 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例12 Comparative example 12
除了替代在製造例1中製造的光阻劑組合物而使用在比較製造例3中製造的光阻劑組合物，並在3.0托的壓力下進行了減壓乾燥之外，利用與實施例1相同的方法形成了光阻劑圖案。 Except for using the photoresist composition manufactured in Comparative Manufacturing Example 3 instead of the photoresist composition manufactured in Manufacturing Example 1, and drying under reduced pressure under a pressure of 3.0 Torr, the same as in Example 1 was used. The same method is used to form a photoresist pattern.
比較例13 Comparative example 13
除了替代在製造例5中製造的光阻劑組合物而使用在比較製造例4中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Comparative Manufacturing Example 4 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
比較例14 Comparative example 14
除了替代在製造例5中製造的光阻劑組合物而使用在比較製造例5中製造的光阻劑組合物之外，利用與實施例17相同的方法形成了金屬圖案。 Except that the photoresist composition manufactured in Comparative Manufacturing Example 5 was used instead of the photoresist composition manufactured in Manufacturing Example 5, a metal pattern was formed by the same method as in Example 17.
評價例1：光阻劑圖案的錐度角(taper angle)以及CD大 小測定 Evaluation example 1: The taper angle and CD of the photoresist pattern are large Small determination
使用掃描電子顯微鏡測定在實施例1至16以及比較例1至12中製造的光阻劑圖案的錐度角以及CD大小。其結果顯示在表1中。 The taper angle and CD size of the photoresist patterns manufactured in Examples 1 to 16 and Comparative Examples 1 to 12 were measured using a scanning electron microscope. The results are shown in Table 1.
錐度角係從經蝕刻之金屬膜的側邊所測量到的值，且CD大小係藉由測量光阻劑膜的端點與銅膜的端點之間的距離所獲得的值。 The taper angle is a value measured from the side of the etched metal film, and the CD size is a value obtained by measuring the distance between the end point of the photoresist film and the end point of the copper film.
參照表1可知，在實施例1至4中製造的光阻劑圖案、實施例5至8中製造的光阻劑圖案、實施例9至12中製造的光阻劑圖案以及實施例13至16中製造的光阻劑圖案分別與在比較例1至4中製造的光阻劑圖案、比較例5至8中製造的光阻劑圖案以及比較例9至12中製造的光阻劑圖案相比，相對於減壓乾燥時的壓力變化，錐度角以及CD大小的變化較小，因此光阻劑圖案形狀的均勻度較出色。 Referring to Table 1, it can be seen that the photoresist patterns manufactured in Examples 1 to 4, the photoresist patterns manufactured in Examples 5 to 8, the photoresist patterns manufactured in Examples 9 to 12, and Examples 13 to 16 Compared with the photoresist patterns manufactured in Comparative Examples 1 to 4, the photoresist patterns manufactured in Comparative Examples 5 to 8, and the photoresist patterns manufactured in Comparative Examples 9 to 12, respectively Compared with the pressure change during drying under reduced pressure, the taper angle and CD size change less, so the uniformity of the photoresist pattern shape is excellent.
評價例2：金屬圖案的蝕刻歪斜測定 Evaluation example 2: Measurement of etching skew of metal pattern
分別利用掃描電子顯微鏡測定在實施例17至22、比較例13以及14中製造的金屬圖案的蝕刻歪斜。其結果顯示在以下表2中。 The etching distortions of the metal patterns manufactured in Examples 17 to 22 and Comparative Examples 13 and 14 were measured with a scanning electron microscope, respectively. The results are shown in Table 2 below.
經由表2可知，在實施例17至22中製造的金屬圖案與在比較例13以及14中製造的金屬圖案相比蝕刻歪斜較小，因此對基板的黏合力較出色。 It can be seen from Table 2 that the metal patterns manufactured in Examples 17 to 22 have less etch distortion than the metal patterns manufactured in Comparative Examples 13 and 14, and therefore have better adhesion to the substrate.
以上參照附圖以及實施例對根據本發明的較佳實施態樣進行了說明，但這僅僅是示意性的說明，本發明技術領域的普通技藝人士應該能夠理解藉由以上所述可以匯出各種變形以及等同的其他實施態樣。因此，本發明的保護範圍應該由所附申請專利範圍進行限定。 The preferred embodiments of the present invention have been described above with reference to the drawings and embodiments, but this is only a schematic description, and those skilled in the art of the present invention should be able to understand that various types of output can be exported from the above description. Variations and other equivalent implementation aspects. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.
10:基板 10: substrate
20:金屬層 20: Metal layer
20:塗層 20: Coating
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