KR20140137047A

KR20140137047A - Positive photoresist composition

Info

Publication number: KR20140137047A
Application number: KR20130057170A
Authority: KR
Inventors: 김성현; 이은상
Original assignee: 동우 화인켐 주식회사
Priority date: 2013-05-21
Filing date: 2013-05-21
Publication date: 2014-12-02
Also published as: KR102012830B1

Abstract

The present invention relates to a positive photoresist composition, comprising (A) an alkali-soluble resin; (B) diazide based photosensitive compounds; and (C) solvents wherein certain two composition based solvents in certain mixed rate are used, leading to an outstanding photosensitive speed, a good residual film rate and a good resolution and also an outstanding uniformity of the film property and a good stain property under the condition of coating large substrates in a vacuum device (VCD).

Description

[0001] The present invention relates to a positive photoresist composition,

The present invention relates to a positive photoresist composition, and more particularly, to a positive photoresist composition comprising a polymer resin, a photosensitive compound and a solvent for forming a photoresist film.

In order to form a fine circuit pattern such as a liquid crystal display device circuit or a semiconductor integrated circuit, it is necessary to uniformly coat or coat a photoresist composition on an insulating film or a conductive metal film formed on a substrate, The composition is exposed and developed to produce a pattern of the desired shape. The metal film or the insulating film is etched using the patterned photoresist film as a mask, and then the remaining photoresist film is removed to form a fine circuit on the substrate. Such a photoresist composition is classified into a negative type and a positive type according to the change in solubility of a portion to be exposed, and a positive type photoresist composition capable of forming a fine pattern at present is mainly used.

In the resist coating method in the liquid crystal display device manufacturing process, the spin coating method is generally used when the size of the substrate is small, but the slit coating method is being changed as the substrate becomes larger. Since the centrifugal force by the conventional spin coating method is not applied in the case of the slit coating method, it is required to use a solvent and a surfactant having excellent flatness for uniform coating property. In addition, there is a significant difference in properties such as coating properties, flatness, and sensitivity of the resist according to the condition of the vacuum device (VCD).

Examples of the solvent used in the positive photoresist composition include methyl ethyl ketone, cyclohexane (Korean Laid-Open Publication No. 2000-0029176), ethyl 2-hydroxy propionate, cyclohexane methanol 3-cyclohexene-1-methanol, and methoxybutyl acetate (MBA). However, these solvents have a disadvantage in that the film thickness is large during slit application or the profile and sensitivity change under a vacuum device (VCD) condition are large. To solve this problem, a mixed solvent of propylene glycol monomethyl ether acetate (PGMEA), 3-cyclohexene-1-methanol and methoxybutyl acetate (MBA) has been proposed. However, Is expensive and difficult to apply to actual industrial sites.

Accordingly, there is a demand for development of a suitable solvent having a cost competitiveness while improving the physical properties of the photoresist composition.

Korean Laid-Open Publication No. 2000-0029176

Accordingly, it is an object of the present invention to provide a photoresist composition which is excellent in a light-sensitive speed, a CD uniformity, a residual film ratio, and a resolution, Which is excellent in physical properties and cost competitiveness, and is intended to provide a positive photoresist composition which can be actually applied to an industrial field.

According to an aspect of the present invention for achieving the above-mentioned object, the present invention provides a positive resist composition comprising (A) an alkali-soluble resin; (B) a diazide-based photosensitive compound; And (C) a solvent, wherein the solvent comprises (a) from 70 to 99% by weight of propylene glycol monomethyl ether acetate and (b) from 1 to 30% by weight of a butyric acid The present invention provides a positive photoresist composition characterized by being a mixed solvent including butyrolactone.

In addition, the present invention provides a method of manufacturing a thin film transistor, which comprises a photolithography process using the positive photoresist composition.

Therefore, the positive photoresist composition of the present invention according to the above-mentioned problem solving means is less expensive than the conventional positive photoresist composition, has excellent sensitivity, pattern shape, CD uniformity, .

Hereinafter, specific contents of the positive photoresist composition according to the present invention will be described.

The present invention relates to a positive photoresist composition, and more particularly, to a positive photoresist composition which can be used in a semiconductor and a manufacturing process of a liquid crystal display device, has excellent sensitivity, pattern shape and CD uniformity, To an improved positive photoresist composition.

(A) an alkali-soluble resin comprising a compound represented by the following formula (1); (B) a photosensitive compound comprising at least one compound represented by the general formula (2) or (3); And (C) a solvent, wherein the solvent is selected from the group consisting of (a) propylene glycol monomethyl ether acetate (PGMEA) and (b) butyrolactone ), Which is a two-component system solvent.

The positive photoresist composition according to the present invention has excellent photosensitivity, CD uniformity, residual film ratio and resolution by the two-component solvent as described above. In particular, when a large substrate is coated with a photoresist using a slit coater, Exhibits remarkably improved physical properties as compared with the three-component solvent used in the conventional positive photoresist composition in the uniformity of the film characteristics under the condition of the device (VCD) and stain characteristics.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

<Positive Photoresist Composition>

(A) an alkali-soluble resin represented by the following formula

The alkali-soluble resin contained in the positive photoresist composition of the present invention is a compound represented by the following formula (1), and when it is used, chemical resistance and pattern formation can be imparted to the photoresist composition.

(Formula 1)

In Formula 1,

R ₉ to R ₁₄ are each independently selected from the group consisting of H, a C ₁ -C ₆ linear or branched alkyl group, a C ₁ -C ₆ linear or branched alkoxy group and a C ₃ -C ₆ cycloalkyl group ;

R ₁₅ to R ₁₈ are each independently selected from the group consisting of H, C ₁ -C ₆ linear or branched alkyl groups and C ₆ -C ₁₈ aryl groups;

n is from 1 to 300;

Examples of the C ₁ -C ₆ linear or branched alkyl group in the above formula (1) include, but are not limited to, methyl, ethyl, propyl, butyl, pentyl and hexyl.

Examples of the C ₁ -C ₆ linear or branched alkoxy group in the above formula (1) include, but are not limited to, a methoxy group, an ethoxy group, a propoxy group, a butoxy group and a pentoxy group.

Examples of the C ₃ -C ₆ cycloalkyl group in the above formula (1) include, but are not limited to, a cyclopropyl group, a cyclobutyl group, and a cyclopentyl group.

Examples of the C ₆ -C ₁₈ aryl group in the above formula (1) include a benzyl group, a styryl group, a cinnamyl group, an ethoxybenzyl group and the like, but not limited thereto, preferably a benzyl group can be used.

In the general formula (1), R ₉ and R ₁₈ are each a linear or branched alkyl group having 1 to 6 carbon atoms, a linear or branched alkenyl group having 1 to 6 carbon atoms, a linear or branched alkoxy group having 1 to 6 carbon atoms, An aryl group having 1 to 18 carbon atoms, and a heteroaryl group having 6 to 18 carbon atoms.

N is from 1 to 300, and preferably from 30 to 100.

More specific examples of the compound represented by Formula 1 include novolak resin, polyvinyl alcohol, polyvinyl alkyl ether, copolymer of styrene and acrylic acid, copolymer of methacrylic acid and alkyl methacrylate, hydroxystyrene Polymers, polyvinylhydroxybenzoates, and polyvinylhydroxybenzenes. These may be used singly or in combination of two or more. Preferably, the novolac resin may be used as the compound represented by the above formula (1).

The alkali-soluble resin represented by the general formula (1) according to the present invention is a low-molecular-weight substance and has a characteristic of being stable to heat. Therefore, when it is used, the flowability of maintaining a constant shape stably during the warming process, And can exhibit high heat resistance, high sensitivity, and excellent resolving power, and it is possible to form the same wiring in the subsequent process.

At this time, the novolak resin can be obtained by an addition condensation reaction of a phenol compound and an aldehyde compound.

The phenolic compound is not particularly limited and specific examples thereof include phenol, o-, m- and p-cresol, 2,5-xylenol, 3,4-xylenol 3,5- Butylphenol, 4-t-butylphenol, 2-ethylphenol, 3-ethylphenol, 4-ethylphenol, 3-methyl-6-t -Butylphenol, 4-methyl-2-t-butylphenol, 2-naphthol, 1,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene and 1,7-dihydroxynaphthalene , And these may be used singly or in combination of two or more.

The aldehyde-based compound is not particularly limited and specific examples include formaldehyde (formalin), p-formaldehyde, acetaldehyde, propylaldehyde, phenylaldehyde,? - and? -Phenylpropylaldehyde, benzaldehyde, p-hydroxybenzaldehyde, o- and p-methylbenzaldehyde, glutaraldehyde, glyoxal, etc. These may be used alone or in combination of two or more.

The addition condensation reaction between the phenolic compound and the aldehyde compound may be carried out in the presence of an acid catalyst in a conventional manner. Examples of the reaction conditions include a temperature of 60 ° C to 250 ° C and a reaction time of 2 to 30 hours.

Examples of the acid catalyst include organic acids such as oxalic acid, formic acid, trichloroacetic acid, and p-toluenesulfonic acid; Inorganic acids such as hydrochloric acid, sulfuric acid, perchloric acid, phosphoric acid and the like; Divalent metal salts such as zinc acetate, magnesium acetate and the like may be used alone or in combination of two or more.

The addition condensation reaction may be carried out in a suitable solvent or on a bulk phase. The alkali-soluble resin produced by such addition condensation reaction is preferably a polymer having a weight average molecular weight of 3,000 to 8,000 in terms of polystyrene, It is not.

The alkali-soluble resin represented by the formula (1) is preferably contained in an amount of 5 to 30% by weight based on the total weight of the composition. When it is within the above-mentioned range, it is preferable from the viewpoint of coating property and appropriate pattern formation according to process conditions.

(B) Diazide system Photosensitive compound

The diazide photosensitive compound contained in the positive photoresist composition of the present invention includes a compound represented by the following formula (2) or (3), and preferably includes both the compound of the formula (2) and the compound of the formula (3). When used, it is possible to impart chemical resistance and pattern formation to the photoresist composition.

(2)

(Formula 3)

In formulas (2) and (3), R ₁₉ to R ₂₅ are each independently H or a group represented by the following formula (4)

X to Y is a group represented by alkyl or ketones of C ₁ -C _6.

(Formula 4)

The diazide-based photosensitive compound (B) contained as the photosensitive compound in the photoresist composition of the present invention is not particularly limited and those known in the art may be used. Preferably, the phenolic compound having a hydroxyl group and the quinone diazide An ester compound of a zidosulfonic acid compound can be used.

The diazide-based photosensitive compound may be at least one selected from the group consisting of hydroxybenzophenone, 1,2-naphthoquinone diazide, 1,2-naphthoquinone diazide sulfonic acid, 2-diazo-1-naphthol- -Diazo-1-naphthol-4-sulfonic acid with a diazide-based compound.

The phenolic compound having a hydroxyl group is not particularly limited, and a specific example thereof is hydroxybenzophenone.

The quinone diazide sulfonic acid compound is not particularly limited, and specific examples thereof include o-quinonediazide sulfonic acid compounds.

Specific examples of the ester compound include a phenolic polyhydroxy compound having at least three hydroxyl groups, a 1,2-naphthoquinonediazide-4-sulfonic acid, a 1,2-naphthoquinonediazide-5-sulfonic acid, , And ester compounds of 2-benzoquinonediazide-4-sulfonic acid.

The ester compound can be obtained by reacting the phenolic compound having a hydroxyl group with an o-quinonediazide sulfonyl halide in the presence of triethylamine base in a suitable solvent. Thereafter, the desired quinonediazide sulfonic acid ester can be isolated by suitable post-treatment.

Such a post-treatment includes, for example, a method of mixing a reactant with water to precipitate a desired compound, filtering and drying to obtain a powdery product; A method in which the reaction product is treated with a resist solvent such as 2-heptanone, washed with water, phase-separated, and the solvent is removed by distillation or equilibrium flash distillation to obtain a product in the form of a solution in a resist solvent.

At this time, the equilibrium flash distillation refers to a kind of continuous distillation in which a part of the liquid mixture is distilled and the generated vapor is sufficiently brought into contact with the liquid phase, and if the equilibrium is obtained, the vapor and the liquid are separated. This method is very suitable for the concentration of the heat-sensitive material since the vaporization rate is very good, the vaporization takes place in an instant, and the equilibrium between the vapor and the liquid phase is quickly performed.

In particular, as the diazide-based photosensitive compound (B), a condensation product of 2,3,4,4'-tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride (Formula 2) , A condensate of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride (Formula 3), or a mixture thereof is preferably used.

The diazide-based photosensitive compound (B) is preferably contained in an amount of 1 to 15% by weight, and more preferably 2 to 10% by weight based on the total weight of the composition. When it is within the above-mentioned range, it is preferable from the viewpoint of improving the sensitivity of the resist, improving the contrast, and improving the residual film ratio.

(C) Mixed solvent

The photoresist composition of the present invention is characterized by using a mixed solvent composed of two components. Such mixed solvents include (a) 70 to 99% by weight of propylene glycol monomethyl ether acetate and (b) 1 to 30% by weight of butyrolactone based on the total weight of the solvent Mixed solvents containing 70 to 95% by weight of propylene glycol monomethyl ether acetate and 5 to 30% by weight of butyrolactone may be used, Can be used.

If the content of propylene glycol monomethyl ether acetate is less than 70% by weight, film uniformity and poor drying property tend to occur. If the content of propylene glycol monomethyl ether acetate is more than 99% by weight, a problem of poor coatability occurs. If less than 1% by weight of butyrolactone is contained, there is a problem of poor solubility in the preparation of a resist, while if it exceeds 30% by weight, a problem of poor coatability occurs.

The (C) mixed solvent is preferably contained in an amount of 60 to 94% by weight, preferably 70 to 90% by weight based on the total weight of the composition. When the mixed solvent is contained in the above range, it is possible to form an appropriate film thickness and exhibits desirable characteristics in terms of residual film ratio and sensitivity.

(D) Additive

In the photoresist composition of the present invention, additives such as a colorant, a dye, a plasticizer, an anti-chipping agent, an adhesion promoter, a speed enhancer, and a surfactant may be further added. By coating the substrate with the photoresist composition containing such an additive, performance can be improved according to the characteristics of the individual steps.

As the speed increasing agent, a phenol compound having a low molecular weight or the like can be preferably used. As the surfactant, a surfactant known in the art may be used without any particular limitation. For example, a silicon surfactant and a fluorinated surfactant may be used alone or in combination of two or more. The additional additive is preferably used in an amount of 0.001 to 10% by weight based on the total weight of the composition, which is advantageous in that the shape of the residue and pattern is improved within the above range.

<Positive Photoresist Method for forming pattern using composition >

The positive photoresist composition of the present invention can be applied to a substrate by conventional methods including immersion, spraying, spinning and spin coating. For example, in the case of spin coating, a coating having a desired thickness can be formed by suitably changing the solids content of the photoresist solution according to the type and method of the spinning apparatus.

The substrate may be formed of a material selected from the group consisting of silicon, aluminum, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, polysilicon, ceramic, aluminum / copper mixture, indium / tin oxide, indium / gallium oxide, molybdenum, .

The coated positive photoresist composition may be subjected to a soft bake at a temperature of 20 ° C to 110 ° C. The soft bake is carried out to evaporate the solvent without pyrolyzing the solid component in the photoresist composition. Since it is generally desirable to minimize the concentration of solvent through a soft bake process, this treatment is performed until most of the solvent is evaporated and a thin coating of the photoresist composition remains on the substrate.

Next, the substrate on which the photoresist film is formed is exposed to light, particularly ultraviolet light, using a suitable mask or template, thereby forming a desired pattern.

The substrate including the exposed photoresist film is sufficiently immersed in an alkaline developing aqueous solution and then left until the photoresist film of the exposed area is completely or almost completely dissolved. The alkaline developing aqueous solution is not particularly limited, but a suitable developing aqueous solution includes alkali hydroxide, ammonium hydroxide, tetramethylammonium hydroxide (TMAH), (2-hydroxyethyl) trimethylammonium hydroxide (also referred to as "choline" ) Can be used.

After the exposed portions are dissolved and removed, a hard baking process may be performed to remove the substrate having the photoresist pattern formed thereon from the developer, and to improve the adhesion and chemical resistance of the photoresist film. The hard bake process is preferably performed at a temperature below the softening point of the photoresist film, and more preferably, at a temperature of about 100 ° C to 150 ° C.

Subsequently, the substrate having the photoresist pattern formed thereon is etched by wet etching using an etching solution or dry etching using a gas plasma. At this time, the substrate located under the photoresist pattern is protected. After the substrate is processed as described above, a fine circuit pattern is formed on the substrate by removing the photoresist pattern with a suitable stripper.

The present invention includes a method of manufacturing a thin film transistor including a photolithography process using the above positive photoresist composition.

Hereinafter, the present invention will be described in detail with reference to the following examples. However, the present invention is not limited to the following examples.

[Example]

In the following, the percentages, parts and ratios indicating the amounts or amounts used are all by weight unless otherwise specified. The weight average molecular weight is a value measured by GPC using polystyrene as a standard.

Manufacturing example One: Novolac Preparation of Resin A-1

m-cresol and p-cresol were mixed at a weight ratio of 6: 4, formalin was added thereto, and the mixture was condensed by a conventional method using a catalyst of oxalic acid to obtain a cresol novolak resin. A novolac resin having a weight average molecular weight of 6,000 was obtained for this resin.

Manufacturing example 2: Novolac Preparation of Resin A-2

m-cresol and p-cresol were mixed in a weight ratio of 5: 5, formalin was added thereto, and the mixture was condensed by a conventional method using a catalyst of oxalic acid to obtain a cresol novolak resin. A novolac resin having a weight average molecular weight of 5,000 was obtained for this resin.

Examples 1 to 4 and Comparative Example 1 to 7: Positive Photoresist Preparation of composition

The novolak resins described in Table 1 were premixed according to the composition ratios shown in Table 1 below. Then, the premixed novolac resin and the diazide photosensitive compound described in Table 1 below and a surfactant were mixed with the respective (mixed) solvents described in Table 1 below to prepare a positive photoresist composition. At this time, the content of the components other than the surfactant and the solvent is based on the converted solid content.

Novolak resin (% by weight) Diazide-based photosensitive
Compound (% by weight) Surfactants
(weight%) Solvent (% by weight) Component and mixing weight ratio content Component and mixing weight ratio content ingredient content Component and mixing weight ratio content Example 1 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-2 = 70/30 79.8 Example 2 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-2 = 80/20 79.8 Example 3 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-2 = 90/10 79.8 Example 4 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-2 = 95/5 79.8 Comparative Example 1 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 = 100 79.8 Comparative Example 2 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-2 = 60/40 79.8 Comparative Example 3 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-2 = 100 79.8 Comparative Example 4 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-3 = 80/20 79.8 Comparative Example 5 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-4 = 80/20 79.8 Comparative Example 6 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-5 = 80/20 79.8 Comparative Example 7 A-1 / A-2 = 6/4 15 B-1 / B-2 = 6/4 5 D-1 0.2 C-1 / C-3 / C-4
= 60/30/10 79.8

A-1: Novolac resin (m-cresol: p-cresol weight ratio 6: 4) prepared in Preparation Example 1

A-2: Novolac resin (m-cresol: p-cresol weight ratio 5: 5) prepared in Preparation Example 2

B-1: Condensate of 2,3,4,4'-tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride (Formula 2)

B-2: Condensate of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride (Formula 3)

C-1: Propylene glycol Monomethyl ether acetate ( PGMEA )

C-2: Butyrolactone ( Butyrolactone )

C-3: Ethyl 2-Hydroxypropionate

C-4: Cyclohexene-1-methanol

C-5: Methoxybutyl acetate (MBA)

D-1: (product name: MEGAFACE F-554; manufactured by DIC Corporation (Japan))

Test Example : Positive Photoresist Evaluation of composition characteristics

The compositions of Examples 1 to 4 and Comparative Examples 1 to 7 were filtered with a fluororesin filter to obtain a resist solution. The resist solutions were spin-coated on a silicon wafer treated with hexamethyldisilazane and pre-baked at 110 캜 for 90 seconds directly on a hot plate to form a resist film having a thickness of 1.60 탆.

The wafer having the resist film was subjected to a line-and-space pattern while changing the exposure amount step by step using an i-line stepper ("NSR-2005 i9C" manufactured by Nikon Co., NA = 0.57, Lt; / RTI > Thereafter, a 2.38% tetramethylammonium hydroxide aqueous solution was used for puddle development for 60 seconds. The sensitivity, the CD uniformity, the residual film ratio, and the film uniformity under the vacuum device (VCD) conditions were evaluated for each pattern by the following method, and the results are shown in Table 2 below.

Effective sensitivity: 5.0 탆 represents the exposure amount when the cross-section of the line-and-space pattern is 1: 1. Baked at 110 deg. C, and then exposed and developed, and then measured.

The conditions of the vacuum device (VCD) were set at a reduced pressure of 0.5 torr, baked at 110 DEG C, developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 60 seconds, and compared with CDs according to the exposure amount.

CD margin = (50 mJ CD / 40 mJ CD) x 100

&Lt; Residual film ratio &

After baking at 110 占 폚, development was carried out for 60 seconds with a 2.38% tetramethylammonium hydroxide aqueous solution without exposure, and the film thickness before and after development was compared.

Remaining film ratio = (film thickness after development / film thickness before development) x 100

&Lt; Film thickness uniformity &

The photoresist was coated on a glass substrate having a size of 370 * 470 mm, baked, and then the film thickness of the coated resist was measured to about 30 points, and film uniformity was evaluated by the following equation.

Film uniformity = (maximum value-minimum value) / (2 * average value) x 100

Effective sensitivity (msec) CD Uniformity (%) Remaining film ratio (%) Film uniformity (%) Example 1 40.4 98 98 0.7 Example 2 40.2 98 98 0.5 Example 3 40.3 99 98 0.3 Example 4 40.3 99 98 0.3 Comparative Example 1 40.1 93 99 3.2 Comparative Example 2 40.2 95 96 1.2 Comparative Example 3 40.4 95 92 3.5 Comparative Example 4 40.2 96 92 1.6 Comparative Example 5 41.0 93 95 1.7 Comparative Example 6 39.0 95 94 2.5 Comparative Example 7 40.6 98 97 1.5

As shown in Table 2, it was confirmed that the positive photoresist composition according to the present invention exhibited excellent characteristics in terms of effective sensitivity, CD uniformity in the presence of a vacuum device (VCD), residual film ratio and film uniformity.

Particularly, the positive photoresist compositions (Examples 1 to 4) using a two-component mixed solvent mixed at a constant ratio according to the present invention have significantly superior CD uniformity and film uniformity than Comparative Examples 1 and 3 using a single component And exhibited excellent CD uniformity, residual film ratio, and film uniformity as compared with Comparative Example 2 in which a mixed solvent in a range outside the mixing ratio of the present invention was used. In addition, the positive photoresist composition of the present invention exhibited remarkably excellent film uniformity as compared with Comparative Examples 4 to 7 using a conventional mixed solvent.

Thus, based on the above experimental results, the excellent sensitivity in the positive photoresist composition of the present invention, the uniformity of the CD in the presence of the vacuum device (VCD), the residual film ratio and the uniformity of the film can be obtained by using propylene glycol monomethyl ether acetate) and butyrolactone (Butyrolactone) at a certain ratio.

Claims

(A) an alkali-soluble resin; (B) a diazide-based photosensitive compound; And (C) a solvent,
The solvent (C) is a mixed solvent comprising (a) 70 to 99% by weight of propylene glycol monomethyl ether acetate and (b) 1 to 30% by weight of butyrolactone &Lt; / RTI >

The method according to claim 1,
Wherein the positive photoresist composition comprises 5 to 30% by weight of the alkali-soluble resin (A), 1 to 15% by weight of the diazide-based photosensitive compound (B) and 60 to 94% by weight of the solvent (C) Wherein the photoresist composition is a photoresist composition.

The method according to claim 1,
The solvent (C) is a mixed solvent comprising (a) 70 to 95% by weight of propylene glycol monomethyl ether acetate and (b) 5 to 30% by weight of butyrolactone &Lt; / RTI >

The method according to claim 1,
The positive-working photoresist composition according to claim 1, wherein the alkali-soluble resin (A) comprises a compound represented by the following formula (1)
(Formula 1)

In Formula 1,
R ₉ to R ₁₄ are each independently selected from the group consisting of H, a C ₁ -C ₆ linear or branched alkyl group, a C ₁ -C ₆ linear or branched alkoxy group and a C ₃ -C ₆ cycloalkyl group ;
R ₁₅ to R ₁₈ are each independently selected from the group consisting of H, C ₁ -C ₆ linear or branched alkyl groups and C ₆ -C ₁₈ aryl groups;
n is from 1 to 300;

The method according to claim 1,
The alkali-soluble resin (A) may be at least one selected from the group consisting of novolac resins, polyvinyl alcohol, polyvinyl alkyl ethers, copolymers of styrene and acrylic acid, copolymers of methacrylic acid and alkyl methacrylate, hydroxystyrene polymers, Wherein the positive photoresist composition is at least one selected from the group consisting of hydroxybenzoate and polyvinylhydroxybenzene.

The method according to claim 1,
Wherein the diazide-based photosensitive compound (B) is at least one compound selected from the group consisting of a compound represented by the following general formula (2) and a compound represented by the following general formula (3)
(2)

(Formula 3)

In the general formulas (2) and (3), R ₁₉ to R ₂₅ each independently represent H or a group represented by the following general formula (4)
X to Y is a group represented by alkyl or ketones of C ₁ -C _6.
(Formula 4)

The method according to claim 1,
The (B) diazide photosensitive compound is a condensate of 2,3,4,4'-tetrahydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride; And a mixture of a condensate of 2,3,4-trihydroxybenzophenone and 1,2-naphthoquinonediazide-5-sulfonyl chloride.

The method according to claim 1,
Wherein said positive photoresist composition further comprises an additive selected from the group consisting of a colorant, a dye, a plasticizer, an anti-chipping agent, an adhesion promoter, a speed enhancer, and a surfactant.

A manufacturing method of a thin film transistor, which comprises a photolithography process using the positive photoresist composition of claim 1.