KR20110062836A - A positive photoresist composition - Google Patents

Abstract

PURPOSE: A positive photoresist composition is provided to improve productivity by improving a photosensitive speed of a resist, and to ensure excellent adhesion to a lower substrate and excellent residual film uniformity. CONSTITUTION: A positive photoresist composition comprises 100 parts by weight of an alkali-soluble resin, 10-20 parts by weight of photoresist and 0.005-10 parts by weight of additives. The additives include one kind selected from the group consisting of a compound represented by chemical formula 1, a compound represented by chemical formula 2, a compound represented by chemical formula 3, and mixture thereof.

Description

Positive photoresist composition

The present invention relates to a positive photoresist composition, and has a high sensitivity and pattern shape, excellent semi-exposure residual film uniformity, and a positive photo containing additive capable of increasing high sensitivity and adhesion in a metal film such as molybdenum or copper film. It relates to a resist composition.

In order to form a fine circuit pattern such as an integrated circuit of a liquid crystal display device or a semiconductor, first, a photoresist composition is uniformly coated or coated on an insulating film or a conductive metal film formed on a substrate, and the photoresist is coated in the presence of a mask having a predetermined shape. The composition is exposed and developed to form a pattern of the desired shape. The patterned photoresist film is used as a mask to dry or wet etch the metal film or the insulating film, and then the remaining photoresist film is removed to form a fine circuit on the substrate.

Among them, in particular, in the manufacturing process of the liquid crystal display device, as the substrate is enlarged, the exposure time of the coated resist becomes long, which may lead to a decrease in production, and therefore, the development of a resist having a high photosensitive speed is continuously required. In addition, as the size of the metal wiring is reduced, the adhesion between the formed resist pattern and the substrate is continuously required. This is because, when the adhesion between the photosensitive resin composition and the substrate is not good, when the resist film formed by applying the photosensitive resin composition is subjected to pattern exposure and development, collapse or peeling of the formed resist pattern occurs. In addition, if the adhesion between the resist pattern and the substrate is not good, pattern collapse and pattern peeling may occur even during etching. When such a pattern collapse or pattern peeling occurs, defects such as cutting or shorting of the wiring occur in the wiring formed by etching, and the product ratio in the mass production process is lowered. The pattern defect resulting from the lack of adhesiveness with respect to the board | substrate of such a photosensitive resin composition especially arises when the film | membrane to which the photosensitive resin composition is apply | coated is a molybdenum or a tantalum film.

In order to improve the adhesiveness of such a photosensitive resin composition and a board | substrate, it is known to add an adhesive improving agent conventionally to the photosensitive resin composition.

In JP-A-6-27657, the adhesion of the substrate was improved by introducing benzoimidazoles into the positive photoresist composition. Korean Patent Laid-Open Publication No. 10-2008-0020104 has an example in which a carboxybenzotriazole methyl ester compound is added to improve adhesion. However, in any case, it is a reality that improvement is demanded such that the storage stability of the photoresist composition (photosensitive resin composition) is impaired or the adhesion under strict conditions is not sufficient.

In addition, the liquid crystal display device manufacturing process is being changed to a four-sheet mask process to improve productivity. However, currently used photoresist compositions generally do not have a good pattern shape, and the semi-exposed residual film uniformity is not good. If the wet process is performed after wet etching after coating, exposure, and development, the metal film or the substrate of the substrate may be damaged. There are disadvantages.

In order to overcome the above-mentioned problem, it is necessary to shape the pattern shape close to the vertical and to improve the semi-exposed part residual film uniformity. In order to shape the pattern close to vertical, there is a method of adding a photosensitive agent containing a large amount of a photosensitive member to the photoresist. Moreover, there exists a method of adding resin which introduce | transduced carboxylic acids in order to maintain the dissolution rate with respect to the developing solution of resin.

However, this method is a good way to shape the pattern shape of the positive photoresist close to vertical, but slows the sensitivity of the photoresist. In addition, the development speed of the non-exposure region in which the pattern remains is not easily dissolved in the developing solution, and residues remain, thereby making it difficult to obtain a processable pattern.

It is an object of the present invention to provide a positive photoresist composition that can contribute to productivity improvement by accelerating the photosensitive speed of the resist.

It is also an object of the present invention to provide a positive photoresist composition having excellent adhesion to a lower substrate and excellent semi-exposure residual film uniformity.

The present invention is an alkali-soluble resin; Photosensitizers; And a positive photoresist comprising an additive selected from the group consisting of a compound represented by Formula 1, a compound represented by Formula 2, a compound represented by Formula 3, and a mixture thereof To provide a composition.

<Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3,

R ₁ is an alkyl group having 1 to 12 carbon atoms, an allyl group having 1 to 12 carbon atoms, a carboxyl group, a hydroxyl group, or an amino group,

R ₂ is an alkyl group having 1 to 12 carbon atoms, a hydroxyl group, an alkyl hydroxyl group having 1 to 12 carbon atoms, a dialkyl hydroxyl group having 1 to 12 carbon atoms, a carboxyl group, an alkyl carboxyl group having 1 to 12 carbon atoms, and having 1 to 12 carbon atoms. A dialkylcarboxyl group, an amino group, an alkylamino group having 1 to 12 carbon atoms, or a dialkylamino group having 1 to 12 carbon atoms,

R ₃ and R ₅ are each independently hydrogen or a linear or branched alkyl group having 1 to 10 carbon atoms,

R ₄ is a hydroxyl group or an alkoxy group having 1 to 10 carbon atoms,

R ₆ and R ₈ are each independently a direct bond, a linear or branched alkylene group having 1 to 10 carbon atoms,

R ₇ is a direct bond, —CH═CH—CH ₂ —, —O—, —COO—, an amino group, a carbonyl group or an amide group,

R ₉ is hydrogen, a hydroxyl group or an alkyl group having 1 to 12 carbon atoms

R ₁₀ to R ₁₂ are each hydrogen, a hydroxyl group, or a carboxyl group,

R ₁₃ is hydrogen, an alkyl ester group having 1 to 12 carbon atoms, or a carboxyl group.

m is an integer of 1-5.

The positive photoresist composition of the present invention can contribute to productivity improvement by increasing the photosensitive speed of the resist. In addition, the positive photoresist composition of the present invention is excellent in adhesion to the lower substrate and excellent in the semi-exposure residual film uniformity.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.

Ⅰ. Positive photoresist composition

The positive photoresist composition of the present invention comprises an alkali soluble resin, a photosensitizer and an additive.

The alkali-soluble resin contained in the positive photoresist composition of the present invention is not particularly limited as long as it is known in the art, but it is preferable to use a novolak resin. The novolak resin may be obtained by addition-condensation reaction between a phenol compound and an aldehyde compound. The addition-condensation reaction between the phenolic compound and the aldehyde compound is carried out in a conventional manner in the presence of an acid catalyst. The addition-condensation reaction is carried out in a suitable solvent or in bulk, the reaction temperature is usually 60 to 250 ° C., and the reaction time is usually 2 to 30 hours. The phenolic compounds include phenol, o-, m- and p-cresol, 2,5-xylenol, 3,5-xylenol, 3,4-xylenol, 2,3,5-trimethylphenol, 4 t-butylphenol, 2-t-butylphenol, 3-t-butylphenol, 3-ethylphenol, 2-ethylphenol, 4-ethylphenol, 3-methyl-6-t-butylphenol, 4-methyl- It is preferably one or more selected from the group consisting of 2-t-butylphenol, 2-naphthol, 1,3-dihydroxynaphthalene, 1,7-dihydroxynaphthalene and 1,5-dihydroxynaphthalene. Do. The aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, benzaldehyde, phenylaldehyde, α- and β-phenylpropyl aldehydes, o-, m- and p-hydroxybenzaldehyde, glutaraldehyde, glyoxal, It is preferable that it is 1 type (s) or 2 or more types chosen from the group which consists of o- and p-methylbenzaldehyde. The acid catalyst may be an organic acid such as oxalic acid, formic acid, trichloroacetic acid, p-toluenesulfonic acid, or the like; Inorganic acids such as hydrochloric acid, sulfuric acid, perchloric acid, phosphoric acid, and the like; And it is preferable that it is 1 type, or 2 or more types chosen from the group which consists of divalent metal salts, such as zinc acetate and magnesium acetate. The novolac resin produced by the addition-condensation reaction preferably has a weight average molecular weight of 2,000 to 50,000 in terms of polystyrene.

It is preferable that the photosensitive agent contained in the positive photoresist composition of this invention is contained in 10-20 weight part with respect to 100 weight part of said alkali-soluble resin.

The photosensitive agent is preferably an ester compound of a phenolic compound having a hydroxyl group and a quinonediazide sulfonic acid compound. The phenolic compound having a hydroxyl group is 2,3,4,4'-tetrahydroxy benzophenone, trihydroxy benzophenone 2,3,4-trihydroxy benzophenone, 2,3,4,4- Tetra hydroxybenzophenone, 2,3,4,2,4-pentahydroxybenzophenone, tris 4-hydroxy phenylmethane, 1,3,5-tris 4-hydroxy a-dimethylbenzylbenzene, 1,1 -Bis-4-hydroxyphenyl-1-4-1-4- hydroxyphenyl 1-methylethyl phenyl ethane, 2- (3,4-dihydroxyphenyl) -2- (4-hydroxyphenyl) propane It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of these etc. It is preferable that the said quinone diazide sulfonic acid compound is o-quinone diazide sulfonic acid. The o-quinonediazide sulfonic acid consists of 1,2-naphthoquinonediazide-5-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid and 1,2-benzoquinonediazide-4-sulfonic acid It is preferable that it is 1 type, or 2 or more types selected from the group. Specific examples of the ester compound of the phenolic compound having a hydroxyl group and the quinonediazide sulfonic acid compound include phenolic polyhydroxy compounds having at least three hydroxyl groups, and 1,2-naphthoquinonediazide-. Preference is given to ester compounds of 5-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid or 1,2-benzoquinonediazide-4-sulfonic acid.

In addition, the manufacturing method of the ester compound of the said phenolic compound which has a hydroxyl group, and a quinonediazide sulfonic-acid compound is as follows. The ester compound can be obtained by reacting the phenolic compound having the hydroxyl group with o-quinonediazidesulfonyl halide in the presence of a base such as triethylamine in a solvent such as toluene or heptanol. After completion of the reaction, suitable workup can be carried out to separate the desired quinonediazidesulfonic acid ester. Such suitable post-treatments include, for example, a method of mixing a reactant with water to precipitate a desired compound, filtering and drying to obtain a powdery product; The reaction is treated with a resist solvent such as 2-heptanone, washed with water, phase separated, and the solvent is removed by distillation or equilibrium flash distillation to obtain a product in the form of a solution in a resist solvent. The equilibrium flash distillation refers to a kind of continuous distillation that distills a portion of the liquid mixture and separates the vapor into a liquid phase when equilibrium is achieved by bringing the generated vapor into sufficient contact with the liquid phase. The equilibrium flash distillation has a very good evaporation rate, evaporation takes place in an instant, and the equilibrium between the vapor and the liquid phase is rapid, which is suitable for the concentration of the thermosensitive material.

Additives included in the positive photoresist composition of the present invention includes a compound represented by the following formula (1), a compound represented by the following formula (2), a compound represented by the following formula (3), and a mixture thereof; And the residual film uniformity of the semi-exposed part are improved, and the adhesion is improved.

<Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3,

R ₁ is an alkyl group having 1 to 12 carbon atoms, an allyl group having 1 to 12 carbon atoms, a carboxyl group, a hydroxyl group, or an amino group,

R ₂ is an alkyl group having 1 to 12 carbon atoms, a hydroxyl group, an alkyl hydroxyl group having 1 to 12 carbon atoms, a dialkyl hydroxyl group having 1 to 12 carbon atoms, a carboxyl group, an alkyl carboxyl group having 1 to 12 carbon atoms, and having 1 to 12 carbon atoms. A dialkylcarboxyl group, an amino group, an alkylamino group having 1 to 12 carbon atoms, or a dialkylamino group having 1 to 12 carbon atoms,

R ₃ and R ₅ are each independently hydrogen or a linear or branched alkyl group having 1 to 10 carbon atoms,

R ₄ is a hydroxyl group or an alkoxy group having 1 to 10 carbon atoms,

R ₆ and R ₈ are each independently a direct bond or a linear or branched alkylene group having 1 to 10 carbon atoms,

R ₇ is a direct bond, —CH═CH—CH ₂ —, —O—, —COO—, an amino group, a carbonyl group or an amide group,

R ₉ is hydrogen, a hydroxyl group or an alkyl group having 1 to 12 carbon atoms,

R ₁₀ to R ₁₂ are each hydrogen, a hydroxyl group, or a carboxyl group,

R ₁₃ is hydrogen, an alkyl ester group having 1 to 12 carbon atoms, or a carboxyl group.

m is an integer of 1-5.

It is preferable to use the said additive in 0.005-10 weight part with respect to 100 weight part of said alkali-soluble resin. If it is less than the above-mentioned range, the effect of adhesive improvement is inadequate. If it exceeds the above-mentioned range, residues are formed at the time of resist patterning, and process progress is difficult.

It is preferable that the compound represented by the said Formula (1) is benzotriazole or carboxy benzotriazole. Commercially available materials are preferably Iganox-1010 (trade name, Ciba Specialty Chemicals) or Iganox-1076 (trade name, Ciba Specialty Chemicals).

The compound represented by the formula (2) is preferably one kind from the group consisting of methyl gallate, propyl gallate, dodecyl gallate, octyl gallate, and gallic acid.

The compound represented by Formula 3 is preferably catechol or pyrogallol.

The positive photoresist composition of the present invention can be applied in the form of a resist solution in which the above components are dissolved in a solvent on a substrate such as a silicon wafer. The solvent included in the positive photoresist composition of the present invention is not particularly limited as long as it can dissolve the components, has a suitable drying speed, and can form a uniform and smooth coating film after evaporation of the solvent. What is normally used can be used. Examples of the solvent include glycol ether esters such as ethyl cellosolve acetate, methyl cellosolve acetate, propylene glycol monomethyl ether acetate, and propylene glycol monoethyl ether acetate; Glycol ethers such as ethyl cellosolve, methyl cellosolve, propylene glycol monomethyl ether and propylene glycol monoethyl ether; Esters such as ethyl acetate, butyl acetate, amyl acetate and ethyl pyruvate; Ketones such as acetone, methyl isobutyl ketone, 2-heptone and cyclohexanone; And cyclic ester, such as (gamma) -butyrol acetone, etc. are mentioned. The said solvent can be used individually or in combination of 2 or more types.

The positive photoresist composition of the present invention may further improve performance according to the characteristics of individual processes by coating additives with additives such as colorants, dyes, anti-scratching agents, plasticizers, adhesion promoters, speed promoters, and surfactants. .

II. Pattern Formation Method

The photoresist composition of the invention is applied to a substrate in a conventional manner, including dipping, spraying, spinning and spin coating and slit coating. For example, in the case of spin coating, a coating having a desired thickness can be formed by appropriately changing the solid content of the photoresist solution according to the type and method of the spinning apparatus. The substrate includes molybdenum, multiple layers of molybdenum / aluminum, silicon, aluminum, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, polysilicon, ceramic, aluminum / copper, and various polymerizable resins. It is included.

The photoresist composition coated on the substrate is heated to a temperature of 80 ° C. to 100 ° C. by the method described above to perform a soft bake process. This treatment is carried out to evaporate the solvent without pyrolyzing the solid component in the photoresist composition. It is generally desirable to minimize the concentration of the solvent through a soft bake process, so this treatment is performed until most of the solvent has evaporated leaving a thin coating of photoresist composition on the substrate.

Next, the substrate on which the photoresist film is formed is exposed to light, in particular ultraviolet rays, using a proper mask or a template to form a pattern of a desired shape.

The exposed substrate is sufficiently immersed in an alkaline developing aqueous solution, and then left until all or almost all of the photoresist film at the site exposed to light is dissolved. Suitable developing aqueous solutions include aqueous solutions containing alkali hydroxide, ammonium hydroxide or tetramethylammonium hydroxide (TMAH). Subsequently, the exposed portion is dissolved and removed, and then the substrate is removed from the developer, and then heat treated again to perform a hard bake process to enhance adhesion and chemical resistance of the photoresist film. This hard bake process is preferably carried out at a temperature below the softening point of the photoresist film, preferably at a temperature of about 100 to 150 ° C.

The substrate on which the hard bake process is completed is treated with a corrosion solution or a gas plasma to treat exposed substrate portions, wherein the unexposed portions of the substrate are protected by a photoresist film. After the substrate is treated in this manner, a photoresist film is removed with an appropriate stripper to form a fine circuit pattern on the substrate.

Hereinafter, the present invention will be described through Examples and Comparative Examples. The following examples are not intended to limit the scope of the invention as illustrated to specifically illustrate the present invention.

Examples 1-6, Comparative Example 1: Preparation of Positive Photoresist Composition

After dissolving by stirring for 3 hours at the component and composition ratio shown in Table 1, after stirring for 3 hours at 60 ℃, the temperature was lowered to room temperature, and filtered with a filter of 0.1 ㎛ to prepare a positive photoresist composition.

Alkali soluble resin
(Parts by weight) Photosensitizer
(Parts by weight) additive
(Parts by weight) Surfactants
(Parts by weight) Solvent (part by weight) Example 1 A-1 100 B-1 15 C-1 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Example 2 A-1 100 B-1 15 C-2 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Example 3 A-1 100 B-1 15 C-3 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Example 4 A-1 100 B-1 15 C-4 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Example 5 A-1 100 B-1 15 C-5 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Example 6 A-1 100 B-1 15 C-6 0.1 D-1 0.03 E-1 / E-2 90/10 = 800 Comparative Example 1 A-1 100 B-1 15 - - D-1 0.03 E-1 / E-2 90/10 = 800

A-1: Novolak resin whose weight average molecular weight is 15,000 in terms of polystyrene.

B-1: ester compound of 2,3,4,4'-tetrahydroxybenzophenone and 1,2-naphthoquinone diazide-5-sulfonic acid

C-1: benzotriazole

C-2: carboxybenzotriazole

C-3: Iganox-1010 (trade name, manufacturer: Ciba Specialty Chemicals)

C-4: Iganox-1076 (trade name, manufacturer: Ciba Specialty Chemicals)

C-5: catechol

C-6: methylgallate

D-1: fluorine-based surfactant (trade name: R-08, manufacturer: Nippon Ink Chemical Co., Ltd.)

E-1: Propylene Glycol Monomethyl Ether Acetate

E-2: ethyl lactate

Test Example: Evaluation of Characteristics of Positive Photoresist Composition

The positive photoresist compositions of Examples 1 to 6 and Comparative Example 1 were dropped on a 4 inch glass on which a molybdenum / aluminum (Mo / Al) film was formed, rotated at a constant rotational speed, and then the glass was heated at 110 ° C. Heat and dry for 90 seconds to form a 1.60㎛ thick resist.

<Evaluation of Effectiveness>

Exposure was performed using Nikon's stepper NSR-2205i11D with a 5 μm line and space pattern on the resist, while increasing the exposure intensity, and then, 60% in a 2.38% by weight aqueous solution of tetramethyl ammonium hydroxide (TMAH). It was deposited for a second to remove the portion exposed to ultraviolet light to form a photoresist pattern. Using the cross-sectional SEM (model name s-4700 manufactured by Hitachi, Inc.), the thus formed pattern was referred to as the effective sensitivity when the line size became 5 µm, and the results are shown in Table 2.

<Adhesive evaluation>

The photoresist substrate formed by the above method was etched by spraying an etching solution for molybdenum / aluminum (DONG WOO FINECHEM, product name TO1). The pattern formed as described above was observed by observing 5 占 퐉, 3 占 퐉 and 2 占 퐉 dot patterns etched using a cross-sectional SEM (manufactured by Hitachi, model name s-4700), and the results are shown in Table 2.

○: no pattern peeling, △: the pattern is partially peeled off,

X: the whole pattern is peeled off

Semi-exposure residual film uniformity

In the same exposure time as the effective sensitivity, UV irradiation was performed using a 20% transmittance mask, puddle development for 60 seconds using a 2.38% aqueous tetramethylammonium hydroxide solution, and the difference in thickness of the residual film was evaluated. Indicated.

Residual film uniformity = average residual film thickness of the semi-exposed part-residual film thickness at an arbitrary position

Effective sensitivity
(mJ) Adhesion Evaluation Semi-exposure Remnant Uniformity
(A) 5㎛ 3㎛ 2㎛ Example 1 30 ○ ○ ○ 1000 to 2000 Example 2 35 ○ ○ ○ 1200 to 2100 Example 3 40 ○ ○ ○ 1000-1800 Example 4 30 ○ ○ ○ 1200 to 2200 Example 5 40 ○ ○ △ 1500-2000 Example 6 40 ○ ○ △ 2000 to 3500 Comparative Example 1 60 ○ △ X 4000-5500

Referring to Table 2, the resist pattern formed of the positive resist composition of Examples 1 to 6 according to the present invention exhibited a photosensitive speed, adhesiveness to the lower substrate, and semi-exposed residual film uniformity than the positive resist composition of Comparative Example 1. It can be seen that is excellent.

Claims (9)

Alkali-soluble resins; Photosensitizers; And A positive photoresist composition comprising an additive comprising at least one selected from the group consisting of a compound represented by Formula 1, a compound represented by Formula 2, a compound represented by Formula 3, and a mixture thereof : <Formula 1>

<Formula 2>

<Formula 3>

In Chemical Formulas 1 to 3, R ₁ is an alkyl group having 1 to 12 carbon atoms, an allyl group having 1 to 12 carbon atoms, a carboxyl group, a hydroxyl group, or an amino group, R ₂ is an alkyl group having 1 to 12 carbon atoms, a hydroxyl group, an alkyl hydroxyl group having 1 to 12 carbon atoms, a dialkyl hydroxyl group having 1 to 12 carbon atoms, a carboxyl group, an alkyl carboxyl group having 1 to 12 carbon atoms, or a 1 to 12 carbon atoms. A dialkylcarboxyl group, an amino group, an alkylamino group having 1 to 12 carbon atoms, or a dialkylamino group having 1 to 12 carbon atoms, R ₃ and R ₅ are each independently hydrogen or a linear or branched alkyl group having 1 to 10 carbon atoms, R ₄ is a hydroxyl group or an alkoxy group having 1 to 10 carbon atoms, R ₆ and R ₈ are each independently a direct bond or a linear or branched alkylene group having 1 to 10 carbon atoms, R ₇ is a direct bond, —CH═CH—CH ₂ —, —O—, —COO—, an amino group, a carbonyl group or an amide group, R ₉ is hydrogen, a hydroxyl group or an alkyl group having 1 to 12 carbon atoms, R ₁₀ to R ₁₂ are each hydrogen, a hydroxyl group, or a carboxyl group, R ₁₃ is hydrogen, an alkyl ester group having 1 to 12 carbon atoms, or a carboxyl group. m is an integer of 1-5. The method according to claim 1, Per 100 parts by weight of the alkali-soluble resin, 10 to 20 parts by weight of the photosensitive agent; And Positive photoresist composition comprising 0.005 to 10 parts by weight of the additive. The method according to claim 1, The additive is one selected from the group consisting of benzotriazole, carboxyl benzotriazole, methyl gallate, propyl gallate, dodecyl gallate, octyl gallate, gallic acid, catechol, pyrogallol and mixtures thereof. Positive photoresist composition, characterized in that. The method according to claim 1, The alkali soluble resin is a novolak resin, characterized in that the positive photoresist composition. The method according to claim 4, Positive photoresist composition, characterized in that the weight average molecular weight of the novolak resin is 2,000 to 30,000 in terms of polystyrene. The method according to claim 1, The photosensitive agent is a positive photoresist composition, characterized in that the ester compound of a phenolic compound having a hydroxyl group and a quinonediazide sulfonic acid compound. The method according to claim 6, The phenolic compound having a hydroxyl group is 2,3,4,4'-tetrahydroxy benzophenone, trihydroxy benzophenone 2,3,4-trihydroxy benzophenone, 2,3,4,4- Tetra hydroxybenzophenone, 2,3,4,2,4-pentahydroxybenzophenone, tris 4-hydroxy phenylmethane, 1,3,5-tris 4-hydroxy a-dimethylbenzylbenzene, 1,1 -Bis-4-hydroxyphenyl-1-4-1-4- hydroxyphenyl 1-methylethyl phenyl ethane, 2- (3,4-dihydroxyphenyl) -2- (4-hydroxyphenyl) propane Positive photoresist composition, characterized in that one or two or more selected from the group consisting of. The method according to claim 6, The quinonediazide sulfonic acid compound is o-quinonediazide sulfonic acid. The method according to claim 8, The o-quinonediazide sulfonic acid consists of 1,2-naphthoquinonediazide-5-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid and 1,2-benzoquinonediazide-4-sulfonic acid Positive photoresist composition, characterized in that one or two or more selected from the group.