TWI744987B - Optical sensor package and manufactoring method thereof - Google Patents

Abstract

An optical sensor package manufacturing method includes: disposing a chip having a light emitting region and a light receiving region on a circuit board; disposing at least one light emitter on the light emitting region of the chip and the light emitter is electrically connected to the circuit board; dispensing a light-barrier material at an area between the light emitting region and the light receiving region; molding a transparent material to cover thereof; removing a portion of the transparent material to form a first concave and expose a portion of the light-barrier material; and filling a light blocking material within the first concave and forming a lateral light blocking structure by the light blocking material and the light-barrier material to prevent crosstalk in longitudinal direction.

Description

Optical sensor packaging structure and manufacturing method thereof

The invention relates to an optical sensor packaging structure and a manufacturing method thereof, in particular to an optical sensor packaging structure and a manufacturing method thereof that can effectively prevent light leakage.

Figure 1 shows a schematic diagram of an existing smart watch. As shown in Figure 1, a heart rate sensor 11 is provided at the bottom of the smart watch 10. When the user wears the smart watch, the heart rate sensor can be used to measure the user’s heart rate, etc. Physiological information. In addition to smart watches/bands, smart phones or smart earphones have also begun to set up heart rate sensors. As long as the heart rate sensor touches any part of the user's body, physiological information such as the user's heartbeat can be measured.

However, the overall size of a smart headset is smaller than a smart watch or a smart bracelet, so a smaller heart rate sensor is needed to install it in the smart headset. Among them, the integrated heart rate sensor has the advantage of small size, which is very suitable for the rapidly growing smart earphones in the current market. How to effectively reduce the overall size of the heart rate sensor, and to produce a narrower and thinner heart rate sensor than existing competitive products through a rapid mass production process, is the trend of this industry.

However, when the package size of the photo sensor is reduced, the light leakage problem will be caused, which further affects the sensing effect of the photo sensor. A common method is to glue a light-shielding material shell between the periphery of the package and the transmitter and receiver. Another method is to use a sawing process to create a space that can be filled with other light-shielding materials between the light-emitting element and the light receiver after the process of encapsulating the transparent material used to protect the wafer and the gold wire.

The most common problem in the above methods is that the light leakage between the bottom of the optical material layer between the light emitting element and the light receiver and the surface of the wafer reduces the signal intensity and the signal to noise ratio (SNR).

At present, shrinking the size of sensors has always been the trend of wearable devices. Therefore, how to use packaging technology to make narrower or thinner sensors and reduce the problem of light leakage has become what the optical sensor industry wants to solve One of the important topics.

The technical problem to be solved by the present invention is to provide a method for manufacturing an optical sensor package structure for reducing the size in view of the shortcomings of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a method for manufacturing an optical sensor package structure, which includes: disposing a chip on a circuit substrate, the chip including a light emitting area and a light receiving area Area; at least one light emitting element is arranged on the light emitting area of the chip, and at least one light emitting element is electrically connected to the circuit substrate; coating a light-shielding material between the light emitting area and the light receiving area; filling a light-transmitting material to cover the circuit substrate , The chip, the light-shielding material, and at least one light-emitting element; remove part of the light-transmitting material between the light-emitting area and the light-receiving area to form a first groove and expose the light-shielding material; and fill a light-leakage material in the first recess In the groove, a side light spacing structure formed by connecting the light-leakage material and the light-shielding material is used to block the light beam of the at least one light-emitting element from being directly transmitted to the light-receiving area from the side.

Another technical solution adopted by the present invention is to provide an optical sensor package structure, which includes a circuit substrate, a chip, at least one light-emitting element, a light receiver, a light-shielding material, a light-transmitting material, and a light leakage prevention Material. The chip is arranged on the circuit substrate and includes a light emitting area and a light receiving area, and is electrically connected to the circuit substrate. At least one light emitting element is located on the light emitting area of the chip. The light-shielding material is located between the light-emitting area and the light-receiving area. The light-transmitting material covers the circuit substrate, the chip, at least one light-emitting element and the light-shielding material, and has a first groove to expose part of the light-shielding material. The light-leakage material is located in the first groove formed by the light-transmitting material, wherein the light-shielding material and the light-leakage material are stacked to form a side light spacing structure. The side light spacing structure blocks the light beam of at least one light-emitting element from the side Directly to the light receiving area.

One of the beneficial effects of the present invention is that the manufacturing method of the light sensor provided by the present invention can avoid light leakage problems by arranging the light-shielding material under the light-transmitting material, and can prevent the cutting process during the cutting process. To the chip, in addition to reducing the volume of the overall light sensor and preventing light leakage problems.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

The following are specific examples to illustrate the implementation of the "optical sensor packaging structure and manufacturing method thereof" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

[Embodiments of the process method of the present invention]

FIG. 2 shows a flow chart of the manufacturing method of the optical sensor package structure of the first embodiment of the present invention, as shown in FIG. 2, and referring to FIGS. 3A to 3F and FIGS. 4A to 4F, the embodiment of the present invention A manufacturing method of an optical sensor package structure is provided, which includes the following steps.

In step S201, a circuit substrate 31 is provided, and a chip 32 is disposed on the circuit substrate 31. In the method of manufacturing an optical sensor package structure of the present invention, a chip 32 is disposed on the circuit substrate 31. The chip 32 includes a light emitting area 321 and a light receiving area 322. There is a light receiver 33 on the light receiving area 322 of the wafer 32. Then, in step S202, at least one light emitting element 34 is disposed on the light emitting area 322 of the chip 32, the light emitting element 34 is preferably a light emitting diode (Light Emitting Diode, LED), and the light emitting element 34 is preferably bonded by a chip. The die attach method is installed on the circuit board 31, and the chip 32 and the light-emitting element 34 are electrically connected to the circuit board 31, respectively, as shown in FIGS. 3A and 3B. Furthermore, the chip 32 can be connected to the circuit board 31 through the wire 35 by wire bonding, and the light-emitting element 34 and the chip 32 can be connected through the wire 35.

In step S203, the light-shielding material 36A is coated between the light emitting area 321 and the light receiving area 322 by dispensing. In the preferred embodiment of the present invention, the light-shielding material 36A is coated between the light emitting area 321 and the light receiving area 322 of the wafer 32 by dispensing, that is, between the light emitting element 34 and the light receiver 33 To avoid the problem of light leakage of the light-emitting element 34, the state of glue dispensing can be as shown in FIGS. 3A and 3B, or the state of glue dispensing can also be as shown in FIGS. 4A and 4B.

Furthermore, taking FIGS. 3A and 3B as an example, in order to prevent the light emitted by the light-emitting element 34 from being directly transmitted to the light receiver 33, the adjacent areas of the light-emitting element 34 and the light receiver 33 are glued. First, a light-shielding material 36A is coated, or, taking FIGS. 4A and 4B as an example, a ㄇ-shaped light-shielding material 36B is coated around the light emitting area 321 of the wafer 32, that is, around the light-emitting element 34. The thickness of the light-shielding material 36A or 36B is approximately the same as the height of the light-emitting element 34, and its thickness is preferably not less than 0.5 millimeters (mm), or the thickness of the light-shielding material 36A or 36B is slightly smaller than the height of the light-emitting element 34, which is not here. Limitations. The light-shielding material 36A or 36B can not only be used for light-shielding, but also can be used as a reference thickness for subsequent cutting or etching, that is, as a cutting stop layer or an etching stop layer. Coating the light-shielding material 36A or 36B can prevent the light beam of the light-emitting element 34 from being directly transmitted to the light receiver 33 from the side. The partial surrounding structure of the light-shielding material 36B is not coated with the light-shielding material 36B on the side of the connecting wire 35. Both sides are coated with a light-shielding material 36B, so that the light emitted by the light-emitting element 34 can be prevented from being transmitted under the light-emitting element 34, which may cause light leakage. In addition, the light-shielding material 36A or 36B is preferably composed of liquid crystal polymer, epoxy resin or silicon resin that does not transmit light or does not pass the limited wavelength, and the color is preferably black, and the thixotropic index of the material characteristics must be at least greater than or It is better to be equal to 2.5 or more to ensure that the material can maintain an aspect ratio of at least 1:1.3 or less after dispensing.

In step S204, a light-transmitting material 37 is filled to cover the circuit substrate 31, the chip 32, the light-shielding material 36A or 36B, and at least one light-emitting element 34, and further cover the light receiver 33 and the wire 35. The light-transmitting material 37 is preferably epoxy resin or silicon, and it covers the light-emitting element 34, the light receiver 33, the chip 32, the circuit substrate 31 and the wire 35 by molding, so as to protect the light-emitting element 34 and light receiving. The purpose of the device 33, the chip 32, the circuit board 31, and the wires 35 are as shown in FIG. 3C and FIG. 4C.

Next, in step S205, part of the light-transmitting material 37 located between the light-emitting area 321 and the light-receiving area 322 is removed to form a first groove 381 and expose the light-shielding material 36A or 36B. The main purpose of the light-transmitting material 37 is to protect the light-emitting element 34, the light receiver 33, the chip 32, the circuit board 31, and the wire 35. The light beam emitted by the light-emitting element 34 will be transmitted in the light-transmitting material 37. Therefore, in order to avoid the light-emitting element 34 The emitted light beam is directly transmitted laterally to the light receiver 33, and the light-transmitting material 37 between the light emitting area 321 and the light receiving area 322 is removed to form the first groove 381 in FIG. 3D or 4D.

In detail, in step S205, only the light-transmitting material 37 located between the light emitting region 321 and the light receiving region 322 may be removed to form the first groove 381, or, in different embodiments, in step S205 In addition to removing the light-transmitting material 37 between the light-emitting area 321 and the light-receiving area 322 to form the first groove 381, the light-transmitting material 37 around the wafer 32 may be further removed to form the second groove. 382, as shown in FIG. 3D or FIG. 4D, it is convenient to fill the light leakage prevention material 39 in the first groove 381 and the second groove 382 in the subsequent process steps; or, as shown in FIG. A third groove 383 is formed on the upper and lower sides of the emitter area. The third groove 383 can be formed at the same time as the first groove 381. The third groove 383 communicates with the second groove 382, and the depth of the third groove 383 It is smaller than the depth of the second groove 382. In addition, it should be noted here that in the embodiment of the present invention, only the first groove 381 may be formed, or the first groove 381 may be formed first, and then the second groove 382 may be formed. The order is not limited, and the first groove 381 is not limited. The appearance of the first groove 381 and the second groove 382 can be any shape, such as a U-shaped groove, etc., and it is not limited here.

Furthermore, as shown in FIGS. 3D and 4D, in step S205, the light-transmitting material 37 between the light emitting area 321 and the light receiving area 322 and the surrounding light-transmitting material 37 are removed, and the light-transmitting material 37 is Define the first groove 381 between the light emitting area 321 and the light receiving area 322, the second groove 382 surrounding the periphery of the wafer 32, and even the third grooves 383 located on the upper and lower sides of the light emitting area 321 to facilitate subsequent The first light-leakage material 391 and the second light-leakage material 392 are respectively filled in the process of. In addition, in the step of removing part of the light-transmitting material 37, when forming the first groove 381 and the third groove 383, the thickness of the light-shielding material 36A or 36B can be referred to, and the light-shielding material 36A or 36B is used as a cutting stop layer or etching. When the stop layer is cut or etched downward toward the direction of the wafer 32, the light-transmitting material 37 is cut down along a longitudinal axis with a cutting tool to form the first groove 381 or the third groove 383, which is After the wafer 32 is cut or etched in the direction, until the light-shielding material 36A or 36B is exposed in the first groove 381 or the third groove 383, the preferred cutting end point is at least 0.04 millimeters (mm) above the wafer 32, which means that it has been cut or The etching depth is deep enough. If it is cut or etched further, the wafer 32 may be damaged. At this time, the width of the shading material 36A or 36B after cutting is about 0.2 millimeters (mm), and the width of the shading material 36A or 36B after cutting The size is related to the manufacturing process or the choice of opaque material. The cutting position does not have to be completely cut above the light-shielding material 36A or 36B, and the cutting position may be partially above the light-shielding material 36A or 36B. As described above, the light-shielding material 36A or 36B of the present invention can not only prevent light leakage, but also can be used as a reference position for subsequent cutting or etching.

In detail, please refer to FIGS. 4A and 4D. In the step of removing the light-transmitting material 37 surrounding the wafer 32, there may be at least one more cut down along a horizontal axis to form a half-etched third groove 383 in the wafer. The upper side is at least 0.04 millimeters (mm), that is, the second groove 382 partially surrounding the periphery of the wafer 32 overlaps the surrounding third groove 383 to form a stepped groove structure. Furthermore, taking FIG. 4D as an example, the laterally extending light-shielding material 36B on the upper and lower sides of the light emitting area 321 can also be used as a stop layer for etching or cutting, and part of the light-shielding material 36B is exposed in the above-mentioned stepped groove structure.

In step S206, the light leakage prevention material 39 is filled in the first groove 381. Furthermore, finally, as shown in FIG. 3E and FIG. 3F or FIG. 4E and FIG. 4F, in step S206, the first light-leakage material 391 is filled in the first groove 381 formed by removing the light-transmitting material 37, Or even the first light leakage prevention material 391 and the second light leakage prevention material 392 may be filled in the first groove 381, the second groove 382, and the third groove 383 formed by removing the light-transmitting material 37 to complete the present invention The manufacturing process of the light sensor. The desired light blocking effect is achieved by stacking two different materials, that is, the light blocking material 36A or 36B and the first light leakage prevention material 391 between the light emitting area 321 and the light receiving area 322 will be stacked to form a retaining wall, which is effective Prevent the problem of direct penetration of lateral light. The second light leakage prevention material 392 is filled in the second groove 382 of FIG. 3D or the second groove 382 and the third groove 383 of FIG. The anti-leakage structure achieves the effect of blocking the surrounding ambient light. In the second embodiment, as shown in FIG. 4E, part of the second light leakage prevention material 392 around the light-emitting element 34 is also stacked on the light-shielding material 36B, further avoiding the problem of light transmission from below the light-emitting element 34.

In addition, through the manufacturing method of the optical sensor package structure of the present invention, the surface area of the optical sensor can be effectively reduced by about 2.3% to 9.3%, and its volume is about 4.2mm x 2.6mm x 1mm. The light-shielding material 36 is made of opaque material or liquid crystal polymer, epoxy resin or silicon resin that can block specific wavelength signals. The thixotropic index of the material properties of the light-shielding material 36A or 36B is at least greater than or equal to 2.5, preventing light leakage The material 39 is made of a light-blocking material that does not transmit light or a limited wavelength does not pass, and its intrinsic viscosity is less than 1k centipoise (cps).

[Embodiments of Package Structure of the Invention]

Please refer to FIGS. 3E and 3F or FIGS. 4E and 4F. In a preferred embodiment of the present invention, the optical sensor package structure of the present invention includes a circuit substrate 31, a chip 32, a light receiver 33, and a The light-emitting element 34, a plurality of wires 35, a light-shielding material 36A or 36B, a light-transmitting material 37 and a light-leakage-proof material 39.

The chip 32 is arranged on the circuit substrate 31, and the chip 32 includes a light emitting area 321 and a light receiving area 322. The light receiving area 322 of the chip 32 has a light receiver 33, and the light emitting element 34 is arranged on the light of the chip 32. The emitting area 321, the chip 32 and the light emitting element 34 are electrically connected to the circuit substrate 31 through a plurality of wires 35. The light-shielding material 36A or 36B is arranged between the light-emitting area 321 and the light-receiving area 322, and the light-shielding material 36A is applied to the adjacent areas of the light-emitting area 321 and the light-receiving area 322 by a dispensing method. A lower retaining wall is formed between the receivers 32, as shown in FIG. 3C, or, in different embodiments, the light-shielding material 36B can also be coated around the light-emitting element 34 to form a lower retaining wall of a ㄇ-shaped structure or a dam-shaped structure , As shown in FIG. 4A and FIG. 4B, reference numeral 36B, to block the light beam of the light-emitting element 34 from being directly transmitted to the light receiver 33 from the side. The thickness of the light-shielding material 36A or 36B is not greater than the height of the light-emitting element 34, and the thickness is preferably not less than 0.5 millimeters (mm), but it is not limited here. The light-shielding material 36A or 36B can not only be used for light-shielding, but also can be used as a reference thickness for subsequent cutting or etching, that is, as a cutting stop layer or an etching stop layer.

The light-transmitting material 37 is mainly provided on the circuit substrate 31, the chip 32, the light receiver 33, the light-emitting element 34, the wire 35, and the light-shielding material 36A or 36B to cover the circuit substrate 31, the chip 32, the light receiver 33, and the light-emitting element 34 , The wire 35 and the light-shielding material 36A or 36B, achieve the effect of protecting the circuit substrate 31, the chip 32, the light receiver 33, the light-emitting element 34, and the wire 35. The light leakage prevention material 39 is arranged around the light emitting area 321 and the light receiving area 322 of the wafer 32, in the groove 38 formed by the light transmitting material 37, and further, after the light transmitting material 37 is formed, cut or The light-transmitting material 37 is etched to form a first groove 381 between the light-emitting element 34 and the light receiver 33, and further to form a second groove 382 in FIG. 3D or a second groove 382 in FIG. 4D around the wafer 32 The third groove 383 allows the first light-leakage material 391 and the second light-leakage material 392 to be respectively filled in the first groove 381 and the second groove 382 formed by the light-transmitting material 37 of FIG. The first groove 381, the second groove 382 and the third groove 383 formed by the light-transmitting material 37. In addition, after the light leakage prevention material 39 is filled, the first light leakage prevention material 391 is stacked on the lower barrier wall formed by the light shielding material 36A or 36B, and then an upper barrier wall stacked thereon is formed. In detail, the light-shielding material 36A or 36B is connected with the first light-leakage material 391 to form a stepped barrier wall structure connected up and down, and stacked to form a side light spacing structure, thereby achieving a good light-shielding effect. In different embodiments, the area where the light-transmitting material 37 is removed may also include a region formed around the wafer 32 and partially located on the wafer 32, that is, the position of the third groove 383 shown in FIG. 4D. Further, The position of the third groove 383 and the position defined by the light-shielding material 36B of the ㄇ-shaped structure or the dam-like structure extending on the upper and lower sides of the light-emitting area 321 must partially overlap, or the light-shielding material 36B is partially exposed to the light emission A plurality of third grooves 383 on the upper and lower sides of the area 321. Therefore, when the second light leakage prevention material 392 is formed on the periphery of the chip 32, except that a part of the second light leakage prevention material 392 is filled in the third groove 383, that is, it is stacked on the part of the light shielding material 36B on the periphery of the light emitting element 34, and A part of the second light leakage prevention material 392 will be filled on the second groove 382, that is, stacked on the circuit substrate 31, and finally a stepped surrounding structure is formed, as shown in FIGS. 4E and 4F.

The groove 38 can be formed by first forming the light-transmitting material 37, and then forming the groove by an etching or cutting process, or in different embodiments, a mold can be used to place the optical sensor package structure and then filling the light-transmitting material. The material 37 and the light-transmitting material 37 are cured. When the light-transmitting material 37 is shaped, the groove 38 can be formed at the same time.

[Beneficial effects of the embodiment]

One of the beneficial effects of the present invention is that, in the manufacturing method of the light sensor provided by the present invention, the light-shielding material can be arranged under the light-transmitting material to avoid light leakage problems, and to prevent the occurrence of light leakage during the cutting process. , Dicing to the wafer, in addition to reducing the volume of the overall light sensor and preventing light leakage.

The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

10: Smart watch 11: Heart rate sensor S201~S206: steps 31: Circuit board 32: chip 321: light emitting area 322: light receiving area 33: Optical receiver 34: Light-emitting element 35: Wire 36A: Shading material 36B: shading material 37: Light-transmitting material 38: Groove 381: first groove 382: second groove 383: Third Groove 39: Anti-leak material 391: The first anti-leak material 392: The second anti-leak material

Figure 1 shows a schematic diagram of an existing smart watch.

FIG. 2 shows a flow chart of the manufacturing method of the optical sensor package structure of the present invention.

3A is a top view of a light-shielding material coated on a wafer according to an embodiment of the invention.

Fig. 3B is a cross-sectional view of the light-shielding material coated on the wafer of the present invention.

Fig. 3C is a cross-sectional view of the transparent material provided on the wafer of the present invention.

3D is a cross-sectional view of the present invention with part of the light-transmitting material and part of the circuit board removed.

3E and 3F are a cross-sectional view and a top view of the coated anti-leakage material of the present invention.

4A is a top view of a light-shielding material coated on a wafer according to another embodiment of the invention.

Fig. 4B is a cross-sectional view taken along the line IVB-IVB of Fig. 4A.

4C is a cross-sectional view of the light-transmitting material provided on the wafer of the present invention.

4D is a cross-sectional view of the present invention with part of the light-transmitting material and part of the circuit board removed.

4E and 4F are a cross-sectional view and a top view of the coated anti-leakage material of the present invention.

S201-S206: steps

Claims (10)

A manufacturing method of an optical sensor packaging structure, which includes: Disposing a chip on a circuit substrate, the chip including a light emitting area and a light receiving area; At least one light emitting element is arranged on the light emitting area of the chip, and at least one light emitting element is electrically connected to the circuit substrate; Coating a light-shielding material between the light emitting area and the light receiving area; Filling a light-transmitting material to cover the circuit substrate, the chip, the light-shielding material and at least one light-emitting element; Removing part of the light-transmitting material between the light emitting area and the light receiving area to form a first groove and expose the light-shielding material; and Fill a light-leakage material in the first groove, and a side light spacing structure formed by the light-leakage material and the light-shielding material is used to block the light beam of at least one light-emitting element from being directly transmitted from the side to the Light receiving area. The method for manufacturing an optical sensor package structure according to claim 1, wherein, in the step of coating the light-shielding material, the light-shielding material is coated in the light emitting area and the light A retaining wall is formed between the receiving areas. The method for manufacturing an optical sensor package structure according to claim 2, wherein the light-shielding material is coated on both sides of the light emitting area to form a ㄇ-shaped structure or a dam-shaped structure. The method for manufacturing an optical sensor package structure according to any one of claims 1 to 3, wherein, in the step of removing the light-transmitting material, a part of the light-transmitting material around the wafer is further removed To form a second groove, and in the step of filling the light-leakage material, the second groove is further filled with the light-leakage material to prevent ambient light from being transmitted to the light emitting area and the Light receiving area. The method for manufacturing an optical sensor package structure according to claim 4, wherein, in the step of removing the light-transmitting material, when the first groove is formed, the upper and lower sides of the wafer are simultaneously formed. A third groove is formed, and the third groove communicates with the second groove. The method for manufacturing an optical sensor package structure according to any one of claims 1 to 3, wherein the thixotropic index of the material properties of the light-shielding material is at least greater than or equal to 2.5 or more, and the light-leakage material is The intrinsic viscosity of the material is less than 1k centipoise (cps). An optical sensor packaging structure, which includes: A circuit board; A chip located on the circuit substrate, including a light emitting area and a light receiving area, and electrically connected to the circuit substrate; At least one light emitting element located on the light emitting area of the chip; A light-shielding material located between the light emitting area and the light receiving area; A light-transmitting material covering the circuit substrate, the chip, at least one of the light-emitting elements and the light-shielding material, and having a first groove exposing a portion of the light-shielding material; and A light-leakage material located in the first groove formed by the light-transmitting material; Wherein, the light-shielding material and the light-leakage material are stacked to form a side light spacing structure, and the side light spacing structure blocks at least one light beam of the light-emitting element from being directly transmitted to the light receiving area from the side. . The optical sensor packaging structure according to claim 7, wherein the light-shielding material further extends to the upper and lower sides of the light emitting area to form a ㄇ-shaped structure or a dam-shaped structure. The optical sensor packaging structure according to claim 7 or 8, wherein the light-transmitting material further includes a second groove around the chip, and the light-leakage material is also located in the second groove , To block ambient light from being transmitted to the light emitting area and the light receiving area. According to the optical sensor packaging structure of claim 7 or 8, the thixotropic index of the material properties of the light-shielding material is at least greater than or equal to 2.5 or more, and the material characteristic viscosity of the light-leakage material is less than 1k centipoise (cps ).

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