TW201547011A - Optical sensor and method for manufacturing the same - Google Patents

Abstract

An optical sensor is provided, which includes a substrate, an enclosure structure, a light emitting chip, a light receiving chip and an encapsulating body. The substrate has a surface on which a recess is formed; the enclosure structure is disposed around the substrate and forms a closed space on the surface, and the enclosure structure has a blocking wall sunk into the recess. The light emitting and receiving chips are disposed on the surface of the substrate and electrically connected with the substrate, and the light emitting and receiving chips locate at both sides of the blocking wall. The encapsulating body covers the light emitting and receiving chips. A method for manufacturing optical sensor is provided to manufacture the above optical sensor. Therefore, the optical sensor can have an enclosure structure which is easily fabricated and has a good bonding force.

Description

Light sensor and manufacturing method thereof 【0001】

The present invention relates to a sensor and a method of fabricating the same, and more particularly to a photosensor and a method of fabricating the same.

【0002】

The conventional light sensor includes at least one light emitting element and a light receiving element, and the light emitting element can emit light outward, and the light receiving element can receive the light when the emitted light hits the detecting object and is reflected. The light is reflected and the light sensor outputs a sensing signal.

[0003]

In order to prevent the light emitted from the light-emitting element from being directly transmitted to the light-receiving element, the conventional photo sensor further includes a metal casing. The metal casing covers the light emitting and light receiving component, and the light emitting component and the light receiving component are spaced apart; thus, the metal casing can block the light emitted by the light emitting component from being directly transmitted to the light receiving component. This increases the sensing reliability of the light sensor.

[0004]

However, the metal casing is difficult to apply to a small-sized photosensor because the metal casing is not easily manufactured into a small size; in other words, if the metal casing needs to be made into a small size, the manufacturing cost of the metal casing will be Higher, and manufacturing accuracy is more difficult to control. In addition, the bonding force between the small-sized metal casing and other parts of the light emitter is also poor, which makes the light emitter difficult to assemble; if the adhesive is used to increase the bonding force, the adhesive is not easily coated on the small Size on the metal casing.

[0005]

On the other hand, when assembling the metal casing into the light emitter, only one metal casing can be assembled to one light emitter at a time, and it is impossible to assemble a plurality of metal casings into a plurality of light emitters at the same time, resulting in an increase in assembly time.

[0006]

In view of this, how to improve at least one of the above-mentioned shortcomings is a problem to be solved in the industry.

【0007】

An object of the present invention is to provide a photosensor and a method of manufacturing the same, which solves at least the technical problem of "making the photosensor easy to manufacture and further reducing the manufacturing cost".

[0008]

To achieve the above objective, the optical sensor disclosed in the present invention comprises: a substrate having a surface, and a recess is formed on the surface; a wall structure disposed around the substrate and forming a surface on the surface a closed space, the wall structure has a retaining wall embedded in the recess; a light emitting chip disposed on the surface of the substrate, electrically connected to the substrate, and located at one side of the retaining wall; a light receiving The wafer is disposed on the surface of the substrate, electrically connected to the substrate, and located on the other side of the retaining wall; and a gel covering the light emitting chip and the light receiving wafer.

【0009】

In order to achieve the above object, a method for manufacturing a photosensor according to the present invention includes: providing a substrate; forming a plurality of grooves on a surface of the substrate; forming a plurality of surrounding structures on the surface of the substrate, each The wall structure has a retaining wall, and each of the retaining walls is embedded in each of the recesses; a plurality of light-emitting wafers are disposed on the surface of the substrate, and the light-emitting wafers and the substrate are electrically connected to each other. a light emitting chip is disposed on one side of each of the retaining walls; a plurality of light receiving wafers are disposed on the surface of the substrate, and the light emitting wafers are electrically connected to the substrate, wherein each of the light receiving wafers is located at each of the retaining walls The other side; forming a gel on the substrate to cover the light-emitting wafers and the light-receiving wafers; and cutting the substrate to form the photo sensor.

[0010]

The above objects, technical features and advantages will be more apparent from the following description.

[0059]

1, 2, 3‧ ‧ light sensor
10‧‧‧Substrate
11‧‧‧ surface
12‧‧‧ Groove
20, 20'‧‧‧ wall structure
21‧‧‧Retaining wall
211‧‧‧Exposed Department
212‧‧‧ embedded department
22‧‧‧ Side wall
23‧‧‧Lighting cover
231‧‧‧ openings
30‧‧‧Light emitting wafers, wafers
40‧‧‧Light receiving wafers, wafers
50, 50'‧‧‧ Sealant
51‧‧‧Lens Department
52, 53‧‧‧ Groove
60, 60'‧‧‧ opaque cover
61‧‧‧ openings
S801～S813, S901～S911‧‧‧ steps

[0011]

Figure 1 is a plan view of a photosensor according to a first embodiment of the present invention.
Fig. 2 is a cross-sectional view showing a photosensor according to a first embodiment of the present invention.
Fig. 3 is a plan view of a photosensor according to a first embodiment of the present invention (a light-shielding cover is not shown).
Figure 4 is a cross-sectional view of a photosensor in accordance with a second embodiment of the present invention.
Fig. 5 is a plan view of a photo sensor according to a second embodiment of the present invention.
Figure 6 is a perspective view of a photosensor according to a second embodiment of the present invention.
Figure 7 is a cross-sectional view showing a photosensor according to a third embodiment of the present invention.
8A to 8H are schematic diagrams showing the steps of a method of manufacturing a photosensor according to a fourth preferred embodiment of the present invention.
9A to 9G are schematic diagrams showing the steps of a method of manufacturing a photosensor according to a fifth preferred embodiment of the present invention.

[0012]

Please refer to FIG. 1 to FIG. 3, which are top and cross-sectional views of a photosensor according to a first preferred embodiment of the present invention. In the first embodiment, a photo sensor 1 is disclosed, and the photo sensor 1 can include a substrate 10, a wall structure 20, a light emitting chip 30, a light receiving chip 40, and a gel 50. . The above component features will be described below in order.

[0013]

The substrate 10 is used to carry other components and can have the function of transmitting current signals, so it can have a circuit structure, contacts, etc. (not shown). Structurally, the substrate 10 has a surface 11 and a groove 12, and the surface 11 can be an upper surface, and the groove 12 is formed on the surface 11; the depth of the groove 12 can preferably be greater than or equal to ( ≧) One-half of the thickness of the substrate 10 to increase the light-shielding effect of the retaining wall 21 to be described later.

[0014]

The wall structure 20 is disposed around the substrate 10, that is, the wall structure 20 is disposed along the periphery of the substrate 10, and is not concentrated at the center of the substrate 10. The wall structure 20 can form a closed space (or a confined space) on the surface 11 of the substrate 10 to define a set area of the light-emitting wafer 30 and the light-receiving wafer 40 on the surface 11.

[0015]

In terms of materials, the wall structure 20 can be made of a light-transmitting material (such as epoxy, plastic or silicon), and then an opaque dye is added to make the whole impervious. Light. In other words, the wall structure 20 includes a light barrier gel. The wall structure 20 can be formed by compression molding, injection molding, dispensing, or transfer molding, and the specific description will be made in a part of the manufacturing method described later. .

[0016]

Structurally, the wall structure 20 can have a retaining wall 21 and a plurality of side walls 22, the retaining wall 21 is embedded in the recess 12 of the substrate 10, and the side walls 22 are disposed on the surface 11 of the substrate 10; The side walls 22 are connected to the retaining wall 21 to surround the enclosed space. The retaining wall 21 and the side wall 22 are for blocking light from passing therethrough, and the retaining wall 21 embedded in the recess 12 of the substrate 10 makes it difficult for light to pass through the gap between the retaining wall 21 and the substrate 10. .

[0017]

In addition, the retaining wall 21 can be divided into an exposed portion 211 and an embedded portion 212. The exposed portion 211 is located on the surface 11 , and the embedded portion 212 is located in the recess 12 . The height of the embedded portion 212 is the same as the depth of the recess 12, so the height of the embedded portion 212 is preferably greater than or equal to one-half of the thickness of the substrate 10. When the embedded portion 212 has such a height, it can be effective. The ground blocks light from passing through.

[0018]

On the other hand, preferably, the exposed portion 211 may be thicker than the embedded portion 212; in other words, the thickness of the exposed portion 211 is not limited to the width of the recess 12. When the thickness of the exposed portion 211 is large, the light blocking effect of the retaining wall 21 can be increased. The maximum thickness of the retaining wall 21 may preferably be from 0.3 mm to 0.5 mm.

[0019]

The thickness of the side wall 22 can be smaller and can be smaller than the thickness of the retaining wall 21 because the side wall 22 is used to block light from outside, and the intensity of external light is generally weak, so the thin side wall is thin. 22 is enough to block.

[0020]

The light emitting chip 30 and the light receiving chip 40 are disposed on the surface 11 of the substrate 10, and are electrically connected to the substrate 10 (through a wire bonding method or a flip chip method); the wafers 30 and 40 are both The wall structure 20 is surrounded, and the light-emitting wafer 30 is located on one side of the retaining wall 21, and the light-receiving wafer 40 is located on the other side of the retaining wall 21. The light emitting chip 30 can be controlled to emit a light (such as infrared light). When the emitted light is reflected and touched by a foreign object, the light receiving chip 40 can receive the reflected light, and then generate a sensing. The signal is transmitted to the substrate 10.

[0021]

It should be noted that the specific specifications (such as power, optical wavelength range, etc.) of the wafers 30 and 40 may be different depending on the actual application of the photo sensor 1.

[0022]

The encapsulant 50 is also disposed on the surface 11 of the substrate 10, surrounded by the surrounding structure 20, and covers the light emitting chip 30 and the light receiving wafer 40. The encapsulant 50 protects the wafers 30 and 40 from environmental factors.

[0023]

In terms of materials, the encapsulant 50 may be made of a light transmissive material (for example, an epoxy, a plastic, or a silcon), and the whole is a light transmissive. In other words, the encapsulant 50 includes a light transmissive colloid that does not block light transmission. The encapsulant 50 can be formed by a press molding, an injection molding, a point glue or a transfer molding, and the specific description will be made in a part of the manufacturing method to be described later.

[0024]

With the above features, the photo sensor 1 can sense whether a foreign object is close to the photo sensor 1 by the light emitting chip 30 and the light receiving chip 40, and the photo sensor 1 can be increased by the wall structure 20 The sensing accuracy of itself, that is, the wall structure 20, can block unintended light from being sensed by the light receiving wafer 40, such as blocking light from the environment, or blocking direct light from the light emitting wafer 30.

[0025]

In addition, the photo sensor 1 of the present invention may optionally include a light shielding cover 60 to further increase the sensing accuracy of the photo sensor 1.

[0026]

Specifically, the light-shielding cover 60 is disposed on the wall structure 20, and the light-shielding cover 60 has a plurality of openings 61. In the embodiment, the openings 61 are two to correspond to the wafers 30 and 40. Number of). The openings 61 expose a portion of the encapsulant 50 and are located above the wafers 30 and 40, respectively. Light from the light-emitting wafer 30 can be emitted outward through one of the openings 61, and the light-receiving wafer 40 can receive light reflected from the light-emitting wafer 30 through the other of the openings 61.

[0027]

The light-shielding cover 60 can be made of an opaque material and can be formed by a printing process, spraying or patching. The patch means that the light-shielding cover 60 is separately fabricated and then attached to the wall structure 20.

[0028]

The light-shielding cover 60 can restrict the area through which the light passes, so that the reflected light of the specific path can be received by the light-receiving wafer 40 through the light-shielding cover 60 and then into the sealant 50. The specific path may correspond to a specific sensing range of the photo sensor 1 , and the foreign object within the specific sensing range is sensed by the photo sensor 1 .

[0029]

Please refer to FIG. 4 to FIG. 6 , which are top, cross-sectional and perspective views of a photo sensor according to a second preferred embodiment of the present invention. In the second embodiment, another photo sensor 2 is disclosed, and the photo sensor 2 can include a substrate 10, a wall structure 20, a light emitting chip 30, and a light as the photo sensor 1. The wafer 40 and a gel 50 are received.

[0030]

The difference is that the light sensor 2 includes another light shielding cover 60 ′. The light shielding cover 60 ′ can be disposed only on the sealing body 50 or extended to cover the wall structure 20; The light-shielding cover 60' likewise has a plurality of openings 61 to limit the area through which light passes.

[0031]

Please refer to FIG. 7, which is a cross-sectional view of a photosensor according to a third preferred embodiment of the present invention. In the third embodiment, a further photo sensor 3 is disclosed, and the photo sensor 3 can include a substrate 10, a light emitting chip 30, a light receiving chip 40 and a light sensor 1 Sealant 50'.

[0032]

The difference is that the light sensor 3 includes another wall structure 20 ′, which has a light-shielding cover 23 , that is, the retaining wall 21 and the side wall 22 of the wall structure 20 ′ and the light-shielding cover 23 . In one piece, the retaining wall 21 has a uniform thickness. On the other hand, the encapsulant 50' further has a plurality of lens portions 51 respectively disposed in the plurality of openings 231 of the light-shielding cover 23; the lens portions 51 are used to concentrate light to make the light easier. It is sensed by the light receiving wafer 40.

[0033]

The above paragraphs illustrate the photosensors 1 to 3 according to an embodiment of the present invention, and it should be understood from the above paragraph that the wall structure 20 (20') of the photo sensors 1 to 3 can be directly formed on the substrate 10. (that is, the wall structure 20 is not pre-made and then assembled onto the substrate 10), so the bonding between the wall structure 20 and the substrate 10 is better, and the assembly steps of the wall structure 20 and the substrate 10 can be omitted; When the wall structure 20 is formed by compression molding or injection molding, the size of the wall structure 20 is relatively easy to control.

[0034]

Please refer to FIG. 8A to FIG. 8H, which are schematic diagrams showing the steps of a method for manufacturing a photosensor according to a fourth preferred embodiment of the present invention. In the fourth embodiment, a method of manufacturing a photosensor (hereinafter simply referred to as a manufacturing method) is disclosed, which can manufacture one or more photosensors such as the photosensors 1 and 2 described above. Therefore, the technical content of the manufacturing method and the technical contents of the photo sensors 1 and 2 can be referred to each other. The manufacturing method can include the following steps:

[0035]

As shown in FIGS. 8A and 8B, in step S801 and step S803, a substrate 10 is first provided, and then a plurality of grooves 12 are formed on a surface 11 of the substrate 10. The grooves 12 can be formed by a cutting process, and when the grooves 12 are cut, the surface 11 of the substrate 10 should be a flat surface and not bent; therefore, the grooves 12 are cut. The depth of the grooves 12 can be more consistent and easier to control.

[0036]

As shown in FIG. 8C, in step S805, a plurality of wall structures 20 are formed on the surface 11 of the substrate 10. Each of the wall structures 20 has a retaining wall 21, and each of the retaining walls 21 is embedded in each of the recesses. In the slot 12. The wall structure 20 can be directly formed on the substrate 10 by including a press molding, an injection molding, a point glue or a transfer molding, that is, the substrate 10 having the groove 12 can be placed into a mold ( In the drawings, the raw material of the wall structure 20 is then injected into the mold and then solidified into the wall structure 20.

[0037]

Step S805 can be performed after S803 is performed, that is, after the recesses 12 are formed on the surface 11 of the substrate 10, the wall structures 20 are formed on the surface 11 of the substrate 10.

[0038]

As shown in FIG. 8D, in step S807-1, a plurality of light emitting wafers 30 and a plurality of light receiving wafers 40 are disposed on the surface 11 of the substrate 10, wherein each of the light emitting wafers 30 is located in each of the blocks. One side of the wall 21, and each of the light receiving wafers 40 is located on the other side of each of the retaining walls 21. As shown in FIG. 8E, in step S807-2, the wafers 30 and 40 and the substrate 10 are electrically connected by a wire bonding method (also by flip chip bonding).

[0039]

Steps S807-1 and S807-2 are generally performed after step S805. However, steps S807-1 and S807-2 may also be performed before step S805, that is, the wafers 30 and 40 are disposed on the substrate 10. After the surface 11 is formed, the wall structures 20 are formed on the surface 11 of the substrate 10.

[0040]

As shown in FIG. 8F, in step S809, a glue 50 is formed on the substrate 10 to cover the light-emitting wafers 30 and the light-receiving wafers 40. The encapsulant 50 can be formed by a compression molding, an injection molding, a bit of glue or a transfer molding; if by dispensing, the raw material of the encapsulant 50 passes through one or more nozzles (not labeled) And injected into the closed space of the substrate 10 and the wall structures 20, and then solidified into the sealant 50. When the encapsulant 50 is formed by dispensing as compared to compression molding or injection molding, it is not necessary to use a mold.

[0041]

As shown in FIG. 8G, in step S811, a light shielding cover 60 is formed on the wall structure 20, and the light shielding cover 60 has a plurality of openings 61. Thereby, the light of the light-emitting wafers 30 is emitted outward through a portion of the openings 61, and the light-receiving wafers 40 respectively receive the light reflected from the light-emitting wafers 30 through the openings 61 of the other portion. . The light shielding cover 60 can be formed by a printing process, spraying or patching.

[0042]

As shown in FIG. 8H, in step S813, the substrate 10 is finally cut to form one or more photo sensors 1. When cutting, the cutter cuts the light-shielding cover 60, the sealant 50, the wall structure 20, and the substrate 10.

[0043]

In addition, if the photo sensor 1 selects not to include the light-shielding cover 60, the step S811 may be omitted, and the step S813 may be performed immediately after the step S809.

[0044]

Thereby, the manufacturing method can simultaneously manufacture a plurality of photo sensors 1 or 2 having the wall structure 20, and the manufacturing method can make the cutting depth of the groove 12 of the substrate 10 easy to control (ie, does not make the groove 12 The cutting depth is too large and the substrate 10 is inadvertently cut. In addition, the manufacturing method can save the number of molds used to reduce the manufacturing cost (i.e., the formation of the sealant 50 can be performed without the aid of a mold).

[0045]

Please refer to FIGS. 9A to 9G, which are schematic diagrams showing the steps of a method of manufacturing a photosensor according to a fifth preferred embodiment of the present invention. In the fifth embodiment, another method of manufacturing a photosensor (hereinafter simply referred to as another manufacturing method) is disclosed, which can produce one or more light such as the photosensor 3 described above. The sensor, and thus the technical content of the other manufacturing method and the technical content of the photo sensor 3 can be referred to each other; the technical content of the other manufacturing method and the aforementioned manufacturing method can also be referred to each other. The other manufacturing method can include the following steps:

[0046]

As shown in FIG. 9A, in step S901, a substrate 10 having a surface 11 is provided. As shown in FIGS. 9B and 9C, in steps S903-1 and S903-2, a plurality of light-emitting wafers 30 and a plurality of light-receiving wafers 40 are subsequently disposed on the surface 11 of the substrate 10, and then The wire bonding method (or flip chip method) electrically connects the wafers 30 and 40 and the substrate 10.

[0047]

As shown in FIG. 9D, in step S905, a glue 50' is formed on the substrate 10 to cover the wafers 30 and 40. The sealant 50' can be formed by a compression molding or an injection molding. To form. The encapsulant 50' has a plurality of recesses 52, each of the recesses 52 being located between each of the light-emitting wafers 30 and each of the light-receiving wafers 40.

[0048]

The recesses 52 may be formed on the encapsulant 50' during compression molding or injection molding. The recesses 52 may also be formed on the encapsulant 50' by a cutting process.

[0049]

During the formation of the encapsulant 50', the substrate 10 may be bent (the reason may be the shrinkage of the encapsulant 50' when curing, or the pressure during molding), so that after the encapsulant 50' is formed, a flattening process can be performed. In order to restore the curved substrate 10 to a flat surface.

[0050]

As shown in FIG. 9E, in step S907, a plurality of grooves 12 are formed on the surface 11 of the substrate 10 along the grooves 52 of the sealant 50; the grooves 12 are respectively formed. Below the grooves 52. The grooves 12 can be formed by a cutting process. Specifically, one or more cutting tools pass through the grooves 52, and then part of the material of the substrate 10 is cut to form the grooves 12. The grooves 12 and the grooves 52 may have the same width.

[0051]

In addition, a plurality of grooves 53 may be formed on the sealant 50' at the same time, before, or after the formation of the grooves 12, and the grooves 53 are located between the two grooves 52.

[0052]

As shown in FIG. 9F, in step S909, a plurality of surrounding wall structures 20' are formed on the surface 11 of the substrate 10, and each of the surrounding wall structures 20' has a retaining wall 21, and each of the retaining walls 21 is embedded in each The groove 12 and each of the grooves 52; each of the wall structures 20' has a plurality of side walls 22, and each of the side walls 22 is embedded in each of the grooves 53.

[0053]

It can be seen from the above steps that after the encapsulant 50' is formed on the substrate 10 and covers the light-emitting wafers 30 and the light-receiving wafers 40, the grooves 12 are formed on the surface 11 of the substrate 10. In addition, the wall structures 20' are formed on the surface 11 of the substrate 10 after the grooves 12 are formed.

[0054]

When the wall structures 20' are formed, a light-shielding cover 23 can be simultaneously formed on each of the wall structures 20', and the light-shielding cover 23 has a plurality of openings 231. The light shielding cover 23 can be integrally formed with the wall structure 20'.

[0055]

As shown in FIG. 9G, in step S911, the substrate 10 is finally cut to form one or more photo sensors 3.

[0056]

In addition, the substrate 10 and the recess 12 thereof can also be fabricated by the following steps (not shown): first, a second plate body, that is, an upper plate and a lower plate; then, drilling, cutting, or drilling with the foregoing Holes or cuts are similar or equivalent to form a plurality of through grooves in the upper plate, while the lower plate is not formed with grooves or through grooves; then, the upper plate and the lower plate are combined (by adhesive And fixing means) to form the substrate 10; the through grooves of the upper plate respectively constitute the grooves of the substrate.

[0057]

In summary, the photo sensor and the method of manufacturing the same disclosed in various embodiments of the present invention may have the following features:

1. The light sensor can be shielded without the need of an external metal casing, so the light sensor does not have the defects caused by the conventional metal casing.

2. The wall structure of the light sensor can effectively block the passage of light and increase the accuracy of the sensor; in addition, the retaining wall of the wall structure is embedded in the substrate to further increase the effect of blocking light.

3. The wall structure can be directly formed on the substrate, so no additional assembly steps are required; in addition, a good bonding force between the wall structure and the substrate can be achieved.

4. The sealant can be formed on the substrate without using a mold, thereby saving the manufacturing cost of the mold.

5. Before the groove of the substrate is formed, the substrate can be flat, so the formation depth of the groove is easier to control.

6. The light-shielding cover body can be formed by a printing process, so that the formation position and the opening size of the light-shielding cover body can be easily controlled.

[0058]

The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

1‧‧‧Light sensor

10‧‧‧Substrate

11‧‧‧ surface

12‧‧‧ Groove

20‧‧‧Wall structure

21‧‧‧Retaining wall

211‧‧‧Exposed Department

212‧‧‧ embedded department

22‧‧‧ Side wall

30‧‧‧Light emitting chip

40‧‧‧Light receiving chip

50‧‧‧ Sealant

60‧‧‧Lighting cover

61‧‧‧ openings

Claims (19)

[Item 1] A light sensor comprising:
a substrate having a surface and having a groove formed on the surface;
a wall structure disposed around the substrate and forming a closed space on the surface, the wall structure having a retaining wall embedded in the groove;
a light emitting chip disposed on the surface of the substrate, electrically connected to the substrate, and located at one side of the retaining wall;
A light receiving chip is disposed on the surface of the substrate, electrically connected to the substrate, and located on the other side of the retaining wall; and a gel covering the light emitting chip and the light receiving wafer. [Item 2] The photo sensor of claim 1, wherein the encapsulant comprises a light transmissive colloid, and the wall structure comprises a light blocking colloid. [Item 3] The light sensor of claim 1, further comprising a light shielding cover disposed on the wall structure and having a plurality of openings, the openings exposing a portion of the sealing body; the light of the light emitting chip is transmitted through the One of the openings emits outwardly, and the light receiving wafer transmits light reflected from the light emitting wafer through the other of the openings. [Item 4] The photo sensor of claim 3, wherein the light shielding cover is integrally formed with the wall structure. [Item 5] The photo sensor of claim 3, wherein the retaining wall of the wall structure has a thickness of 0.3 mm to 0.5 mm. [Item 6] The photosensor of claim 1, wherein the depth of the groove of the substrate is greater than or equal to one-half of the thickness of the substrate. [Item 7] The photo sensor according to claim 1, wherein a portion of the retaining wall of the wall structure on the surface is thicker than a portion of the retaining wall in which the recess is embedded. [Item 8] A method of manufacturing a photosensor comprising:
Providing a substrate;
Forming a plurality of grooves on a surface of the substrate;
Forming a plurality of surrounding wall structures on the surface of the substrate, each of the surrounding wall structures having a retaining wall, each of the retaining walls being embedded in each of the grooves;
a plurality of light emitting wafers are disposed on the surface of the substrate, and electrically connected to the light emitting wafers and the substrate, wherein each of the light emitting wafers is located at one side of each of the retaining walls;
a plurality of light receiving wafers are disposed on the surface of the substrate, and electrically connected to the light emitting wafers and the substrate, wherein each of the light receiving wafers is located on the other side of each of the retaining walls;
Forming a gel on the substrate to cover the light-emitting wafers and the light-receiving wafers; and cutting the substrate to form the photo sensor. [Item 9] The manufacturing method according to claim 8, wherein the grooves are formed by a cutting process. [Item 10] The manufacturing method of claim 8, wherein the wall structures are formed on the surface of the substrate after the grooves are formed on the surface of the substrate. [Item 11] The manufacturing method of claim 8, wherein the wall structures are formed on the surface of the substrate after the light emitting wafers and the light receiving wafers are disposed on the surface of the substrate. [Item 12] The manufacturing method according to claim 8, wherein the wall structure comprises a compression molding, a dispensing, a transfer molding or an injection molding. ) to form. [Item 13] The manufacturing method of claim 8, wherein the recesses are formed on the surface of the substrate after the encapsulant is formed on the substrate and after covering the light-emitting wafers and the light-receiving wafers The wall structures are formed on the surface of the substrate when the grooves are formed. [Item 14] The manufacturing method of claim 13, wherein the encapsulant is formed with a plurality of grooves, and the grooves of the substrate are respectively formed under the grooves of the encapsulant. [Item 15] The manufacturing method according to claim 13, wherein the sealant system comprises a compression molding, a dispensing, a transfer molding or an injection molding. To form. [Item 16] The manufacturing method of claim 8, wherein the providing of the substrate and the forming of the groove comprise:
Providing an upper plate and a lower plate;
Forming a plurality of through grooves in the upper plate; and combining the upper plate and the lower plate to form the substrate;
The through grooves respectively constitute the grooves of the substrate. [Item 17] The manufacturing method according to any one of claims 8 to 16, further comprising:
Before the substrate is cut, a light-shielding cover body is formed on each of the wall structures. The light-shielding cover body has a plurality of openings, and the light of the light-emitting chips is respectively emitted through a part of the openings, and the light is emitted. The receiving wafer receives light reflected from the light emitting wafers through the openings of the other portion. [Item 18] The manufacturing method according to claim 17, wherein the light shielding cover and the plurality of wall structures are integrally formed. [Item 19] The manufacturing method of claim 17, wherein the light-shielding cover system is formed by a printing process, spraying or patching.