TWI742908B - Ilight-emitting apparatus and method of fabricating the same - Google Patents

Abstract

The invention discloses a light-emitting apparatus and a method of fabricating the same. The light-emitting apparatus according to the invention includes an insulative substrate, N circuit layers, N insulative layers, a plurality of bonding pads, anda plurality of light-emitting devices where N is an integer equal to or larger than 2. The N circuit layers and N insulative layers are sequentially and alternately stacked and formed on the insulative substrate. Each circuit layer includes a respective chemical-plating catalytic layer and a respective metal overlaying the chemical-plating catalytic layer, and is electrically connected to the underneath circuit layer through the chemical-plating catalytic layer and the metal layer. Each bonding pad corresponds to one of a plurality of openings of the Nth insulative layer, and is formed to fillthe corresponding opening. Each light-emitting device corresponds to at least two of the plurality of bonding pads and is electrically connected to the corresponding bonding pads.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light-emitting device and a manufacturing method thereof, and particularly to a light-emitting device including at least two circuit layers and without drilling holes in manufacturing, and a manufacturing method thereof.

Current light-emitting devices using light-emitting elements such as light-emitting diodes must use at least two circuit layers as the number of light-emitting elements increases and control requirements such as color change and dimming are required.

In the manufacture of the prior art light-emitting device, in order to electrically connect the upper and lower adjacent circuit layers, it is necessary to drill through holes one by one in the insulating layer in between, and then fill the plurality of through holes with conductive material to form a conductive connection. hole. However, the step of drilling the through holes one by one is quite time-consuming, and the accuracy of the crown holes is not easy to control, resulting in the time-consuming manufacturing of the prior art light-emitting devices and there is still room for improvement in the yield.

Therefore, one of the technical problems to be solved by the present invention is to provide a light-emitting device which includes at least two circuit layers and does not require drilling in manufacturing, and a manufacturing method thereof. In particular, the structure of the light-emitting device of the present invention is different from the structure of the light-emitting device of the prior art, so that the light-emitting device of the present invention is time-saving in manufacturing and has a high yield.

The light-emitting device according to the first preferred embodiment of the present invention includes an insulating substrate, an N-layer circuit layer, an N-layer insulating layer, a plurality of bonding pads, and a plurality of light-emitting elements, where N is an integer equal to or greater than 2. The N-layer circuit layer and the N-layer insulating layer are sequentially and alternately stacked and formed on the insulating substrate. N circuit patterns are provided. Each circuit pattern corresponds to a circuit layer. The first circuit layer in the N-layer circuit layer is formed on the insulating substrate according to its corresponding circuit pattern. The (i+1)th circuit layer is formed on the i-th insulating layer according to its corresponding circuit pattern, where i is an integer index ranging from 1 to (N-1). N opening patterns are provided. Each opening pattern corresponds to an insulating layer. The jth insulating layer is formed to cover the jth circuit layer, and a plurality of openings are formed according to the corresponding opening pattern. The circuit layer of the jth layer is exposed in a plurality of openings of the jth insulating layer, where j is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and its own metal layer covering the electroless plating catalyst layer. The electroless plating catalyst layer of the (i+1)th circuit layer extends to cover the inner wall of each opening of the i-th insulating layer. The metal layer of the (i+1)th circuit layer extends to cover the electroless plating catalyst layer in each opening of the i-th insulating layer. The (i+1)th insulating layer covers a plurality of openings of the i-th insulating layer. Each bonding pad corresponds to one of the openings in the Nth insulating layer, and is formed to fill the corresponding opening. Each light-emitting element corresponds to at least two of the plurality of bonding pads, and is electrically connected to its corresponding bonding pad.

The light-emitting device according to the second preferred embodiment of the present invention includes an insulating substrate, an N-layer circuit layer, an N-layer insulating layer, a plurality of bonding pads, and a plurality of light-emitting elements, where N is an integer equal to or greater than 2. The N-layer circuit layer and the N-layer insulating layer are sequentially and alternately stacked and formed on the insulating substrate. N circuit patterns are provided. Each circuit pattern corresponds to a circuit layer. The first circuit layer in the N-layer circuit layer is formed on the insulating substrate according to its corresponding circuit pattern. The (i+1)th circuit layer is formed on the i-th insulating layer according to its corresponding circuit pattern, where i is an integer index ranging from 1 to (N-1). N opening patterns are provided. Each opening pattern corresponds to an insulating layer. The jth insulating layer is formed to cover the jth circuit layer, and a plurality of openings are formed according to the corresponding opening pattern. The circuit layer of the jth layer is exposed in a plurality of openings of the jth insulating layer, where j is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and its own metal layer covering the electroless plating catalyst layer. The electroless plating catalyst layer of the (i+1)th circuit layer fills up each opening of the i-th insulating layer. Each bonding pad corresponds to one of the openings in the Nth insulating layer, and is formed to fill the corresponding opening. Each light-emitting element corresponds to at least two of the plurality of bonding pads, and is electrically connected to its corresponding bonding pad.

The light-emitting device manufactured by the method for manufacturing a light-emitting device according to the third preferred embodiment of the present invention includes N circuit layers and N insulating layers alternately stacked with the N circuit layers, where N is an integer equal to or greater than 2 . N circuit patterns are provided. Each circuit pattern corresponds to a circuit layer. N opening patterns are provided. Each opening pattern corresponds to an insulating layer. The method according to the third preferred embodiment of the present invention first prepares an insulating substrate. Next, the method according to the third preferred embodiment of the present invention forms the first circuit layer on the insulating substrate according to the first circuit pattern corresponding to the first circuit layer. Next, the method according to the third preferred embodiment of the present invention forms the (i+1)th circuit layer according to the (i+1)th circuit pattern corresponding to the (i+1)th circuit layer, wherein i is an integer index ranging from 1 to (N-1). Next, the method according to the third preferred embodiment of the present invention is to form a j-th insulating layer to cover the j-th circuit layer, and to form one of the j-th insulating layer corresponding to the j-th opening pattern of the j-th insulating layer A plurality of openings, wherein the circuit layer of the jth layer is exposed in the plurality of openings of the insulating layer of the jth layer, and j is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and its own metal layer covering the electroless plating catalyst layer. The electroless plating catalyst layer of the (i+1)th circuit layer extends to cover the inner wall of each opening of the i-th insulating layer. The metal layer of the (i+1)th circuit layer extends to cover the electroless plating catalyst layer in each opening of the i-th insulating layer. The (i+1)th insulating layer covers a plurality of openings of the i-th insulating layer. Next, the method according to the third preferred embodiment of the present invention forms a plurality of solder pads, each of which corresponds to one of the openings of the Nth insulating layer, and fills the corresponding opening . Finally, the method according to the third preferred embodiment of the present invention is to electrically bond a plurality of light-emitting elements to a plurality of bonding pads, wherein each light-emitting element corresponds to at least two bonding pads of the plurality of bonding pads, and is electrically bonded To its corresponding pad.

The light-emitting device manufactured by the method for manufacturing a light-emitting device according to the fourth preferred embodiment of the present invention includes N circuit layers and N insulating layers alternately stacked with the N circuit layers, where N is an integer equal to or greater than 2 . N circuit patterns are provided. Each circuit pattern corresponds to a circuit layer. N opening patterns are provided. Each opening pattern corresponds to an insulating layer. The method according to the fourth preferred embodiment of the present invention first prepares an insulating substrate. Next, the method according to the fourth preferred embodiment of the present invention forms the first circuit layer on the insulating substrate according to the first circuit pattern corresponding to the first circuit layer. Next, the method according to the fourth preferred embodiment of the present invention forms the (i+1)th circuit layer according to the (i+1)th circuit pattern corresponding to the (i+1)th circuit layer, wherein i is an integer index ranging from 1 to (N-1). Next, the method according to the fourth preferred embodiment of the present invention is to form a j-th insulating layer to cover the j-th circuit layer, and to form one of the j-th insulating layer corresponding to the j-th opening pattern of the j-th insulating layer A plurality of openings, wherein the circuit layer of the jth layer is exposed in the plurality of openings of the insulating layer of the jth layer, and j is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and its own metal layer covering the electroless plating catalyst layer. The electroless plating catalyst layer of the (i+1)th circuit layer fills up each opening of the i-th insulating layer. Next, the method according to the fourth preferred embodiment of the present invention forms a plurality of bonding pads, each of which corresponds to one of the openings of the Nth insulating layer, and fills the corresponding opening . Finally, the method according to the fourth preferred embodiment of the present invention is to electrically bond a plurality of light-emitting elements to a plurality of bonding pads, wherein each light-emitting element corresponds to at least two bonding pads of the plurality of bonding pads, and is electrically bonded To its corresponding pad.

In a specific embodiment, the electroless plating catalyst layer of each circuit layer may be formed of metal paste or electroless plating catalyst ink.

Different from the prior art, the light-emitting device of the present invention has a plurality of openings and an insulating layer formed together without drilling, and then the electroless plating catalytic layer and the metal layer forming the circuit layer are filled with the plurality of openings to form a plurality of conductive vias. Thereby, the light-emitting device of the present invention saves time in manufacturing and has a high yield.

The advantages and spirit of the present invention can be further understood from the following detailed description of the invention and the accompanying drawings.

Please refer to FIGS. 1 and 2, which schematically depict the light-emitting device 1 according to the first preferred embodiment of the present invention. Fig. 1 schematically illustrates a light emitting device 1 according to a first preferred embodiment of the present invention in a top view. Fig. 2 is a partial cross-sectional view of the light-emitting device 1 in Fig. 1 along the line A-A.

As shown in FIGS. 1 and 2, the light-emitting device 1 according to the first preferred embodiment of the present invention includes an insulating substrate 10, an N-layer circuit layer 12, an N-layer insulating layer 14, a plurality of bonding pads 16, and a plurality of In the light-emitting element 18, N is an integer equal to or greater than 2.

In a specific embodiment, the insulating substrate 10 may be a flexible insulating substrate, but the invention is not limited to this. If the insulating substrate 10 is a flexible insulating substrate, the insulating substrate 10 can be made of polyethylene terephthalate, polyimide, polymethyl methacrylate, polymethyl methacrylate, or other similar commercial polymers. The material is formed.

The N-layer circuit layer 12 and the N-layer insulating layer 14 are sequentially and alternately stacked and formed on the insulating substrate 10. In FIG. 2, only the three-layer circuit layer 12 and the three-layer insulation layer 14 are shown as representative.

N circuit patterns are provided. Each circuit pattern corresponds to a layer of circuit layer 12. The first circuit layer 12 of the N-layer circuit layer 12 is formed on the insulating substrate 10 according to its corresponding circuit pattern. The (i+1)th circuit layer 12 is formed on the i-th insulating layer 14 according to its corresponding circuit pattern, where i is an integer index ranging from 1 to (N-1).

N opening patterns are provided. Each opening pattern corresponds to an insulating layer 14. The j-th insulating layer 14 is formed to cover the j-th circuit layer 12, and a plurality of openings 142 are formed according to the corresponding opening pattern. The circuit layer 12 of the jth layer is exposed in the plurality of openings 142 of the jth insulating layer 14, where j is an integer index ranging from 1 to N.

In a specific embodiment, the insulating layer 14 can be formed by coating the circuit layer 12 with a UV-curing resin and then irradiating it with UV light, but the invention is not limited to this. The insulating layer 14 can be formed by a printing process, but the invention is not limited to this. When the insulating layer 14 is formed, a plurality of openings 142 are also formed at the same time. It should be emphasized here that the plurality of openings 142 do not need to be formed by a drilling process, which saves time in manufacturing and has high precision.

Each circuit layer 12 includes its own electroless plating catalyst layer 122 and its own metal layer 124 covering the electroless plating catalyst layer 122. In particular, the electroless plating catalyst layer 122 of the (i+1)th circuit layer 12 extends to cover the inner wall of each opening 142 of the i-th insulating layer 14. The metal layer 124 of the (i+1)th circuit layer 12 extends to cover the electroless plating catalyst layer 122 in each opening 142 of the i-th insulating layer 14. The (i+1)th insulating layer 14 covers a plurality of openings 142 of the i-th insulating layer 14. The (i+1)th circuit layer 12 and the i-th circuit layer 12 are electrically connected to the metal layer 124 by the electroless plating catalyst layer 122 filled in the plurality of openings 142 of the i-th insulating layer 14.

In a specific embodiment, the electroless plating catalyst layer 122 of each circuit layer 12 may be formed of metal paste (for example, silver paste, copper paste) or electroless plating catalyst ink. The electroless plating catalyst layer 122 can be formed by a printing process, but the invention is not limited to this.

In a specific embodiment, the metal layer 124 of each circuit layer 12 is deposited on the electroless plating catalyst layer 122 by an electroless plating process. The metal layer 124 may be a single Cu layer, a multilayer Ag/Au layer/multilayer Ag/Au/Sn/Ni layer/single Cu layer, a single Sn layer/single Cu layer, a single Ag layer/single Cu layer , Single Au layer/Single Cu layer, Single Ag layer/Single Ni layer/Single Cu layer, Single Au layer/Single Ni layer/Single Cu layer, Single Sn layer/Single Au layer /Single Ag layer/Single Ni layer/Single Cu layer, etc.

Each bonding pad 16 corresponds to one of the openings 142 of the Nth insulating layer 14 and is formed to fill the corresponding opening 142.

In a specific embodiment, each bonding pad 16 may be a Sn-Bi alloy layer, Au-Sn-Bi alloy layer, Sn-Cu alloy layer, Sn-Bi-Zn alloy layer, Sn-Bi-Sb alloy layer, etc. .

Each light-emitting element 18 corresponds to at least two of the solder pads 16 and is electrically connected to its corresponding solder pad 16. In FIG. 2, only one light-emitting element 18 corresponding to two bonding pads 16 is shown as a representative.

In a specific embodiment, the single light-emitting element 18 may be a packaged light-emitting diode element or a bare-chip light-emitting diode, but the invention is not limited to this. The single light-emitting element 18 may be an element that emits light from its top, or an element that emits light from its side.

Furthermore, as also shown in FIG. 2, the light-emitting device 1 according to the first preferred embodiment of the present invention further includes a light-transmitting resin layer 19. The light-transmitting resin layer 19 is formed to cover the N-th insulating layer 14 and the plurality of light-emitting elements 18. The transparent resin layer 19 is not shown in FIG. 1. In a specific embodiment, the light-transmitting resin layer 19 can be formed by coating an ultraviolet-curing resin and then irradiating it with ultraviolet light, but the invention is not limited to this.

In practical applications, the light-emitting device 1 according to the first preferred embodiment of the present invention can be used for light-emitting keyboards, lamps, and the like. Please refer to FIG. 3, which is a cross-sectional view schematically showing the structure of an example of the light-emitting device 1 used in the light-emitting keyboard 3 according to the first preferred embodiment of the present invention. As shown in FIG. 3, the light-emitting keyboard 3 includes a base 30, a plurality of keys 32, a membrane switch 34, and the light-emitting device 1 according to the first preferred embodiment of the present invention. A plurality of buttons 32 are connected to the top of the base 30 so as to move up and down. The membrane switch 34 is installed between the plurality of buttons 32 and the base 30. The base 30 has a plurality of first through holes 300. The membrane switch 34 has a plurality of second through holes 340. Each second through hole 340 corresponds to a first through hole 300 and is aligned with its corresponding first through hole 300. The membrane switch 34 includes a plurality of switches (not shown in FIG. 3 ), each button 32 corresponds to at least one switch, and the corresponding opening relationship is formed on the periphery of the corresponding second through hole 340. The corresponding opening relationship of each button 32 is actuated and opened by the scissor support device 322 of each button 32. Each light-emitting element 18 of the light-emitting device 1 according to the first preferred embodiment of the present invention corresponds to a button 32. The light-emitting device 1 is installed under the base 30 so that each light-emitting element 18 is placed in the first through hole 300 and the second through hole 340 of the corresponding button 32. Each light-emitting element 18 is used to emit light to illuminate its corresponding button 32.

Please refer to FIGS. 4 and 5, which schematically depict the light-emitting device 2 according to the second preferred embodiment of the present invention. FIG. 4 schematically illustrates a light-emitting device 2 according to a second preferred embodiment of the present invention in a top view. Fig. 5 is a partial cross-sectional view of the light-emitting device 2 in Fig. 4 along the line B-B.

As shown in FIGS. 4 and 5, the light-emitting device 2 according to the second preferred embodiment of the present invention includes an insulating substrate 20, an N-layer circuit layer 22, an N-layer insulating layer 24, a plurality of bonding pads 26, and a plurality of In the light-emitting element 28, N is an integer equal to or greater than 2.

In a specific embodiment, the insulating substrate 20 may be a flexible insulating substrate, but the invention is not limited to this. If the insulating substrate 20 is a flexible insulating substrate, the insulating substrate 10 can be made of polyethylene terephthalate, polyimide, polymethyl methacrylate, polymethyl methacrylate, or other similar commercial polymers. The material is formed.

The N-layer circuit layer 22 and the N-layer insulating layer 24 are sequentially and alternately stacked and formed on the insulating substrate 20. In FIG. 4, only the three-layer circuit layer 22 and the three-layer insulation layer 24 are shown as representative.

N circuit patterns are provided. Each circuit pattern corresponds to a layer of circuit layer 22. The first circuit layer 22 of the N-layer circuit layer 22 is formed on the insulating substrate 20 according to its corresponding circuit pattern. The (i+1)th circuit layer 22 is formed on the i-th insulating layer 24 according to its corresponding circuit pattern, where i is an integer index ranging from 1 to (N-1).

N opening patterns are provided. Each opening pattern corresponds to a layer of insulating layer 24. The j-th insulating layer 24 is formed to cover the j-th circuit layer 22, and a plurality of openings 242 are formed according to the corresponding opening pattern. The circuit layer 22 of the jth layer is exposed in the plurality of openings 242 of the jth insulating layer 24, where j is an integer index ranging from 1 to N.

In a specific embodiment, the insulating layer 24 can be formed by coating the circuit layer 22 with ultraviolet curable resin and then irradiating it with ultraviolet light, but the present invention is not limited to this. The insulating layer 24 can be formed by a printing process, but the invention is not limited to this. When the insulating layer 24 is formed, a plurality of openings 242 are also formed at the same time. It should be emphasized here that the plurality of openings 242 do not need to be formed by a drilling process, which saves time in manufacturing and has high precision.

Each circuit layer 22 includes its own electroless plating catalyst layer 222 and its own metal layer 224 covering the electroless plating catalyst layer 222. In particular, the electroless plating catalyst layer 222 of the (i+1)th circuit layer 22 fills up each opening 242 of the i-th insulating layer 24. The (i+1)th circuit layer 12 and the i-th circuit layer 12 are electrically connected by the electroless plating catalyst layer 122 filled in the plurality of openings 142 of the i-th insulating layer 14.

In a specific embodiment, the electroless plating catalyst layer 222 of each circuit layer 22 may be formed of a metal paste (for example, silver paste, copper paste) or an electroless plating catalyst ink. The electroless plating catalyst layer 222 can be formed by a printing process, but the invention is not limited to this.

In a specific embodiment, the metal layer 224 of each circuit layer 212 is deposited on the electroless plating catalyst layer 222 by an electroless plating process. The metal layer 224 may be a single Cu layer, multiple Ag/Au layers/multiple Ag/Au/Sn/Ni layers/single Cu layers, single Sn layers/single Cu layers, single Ag layers/single Cu layers , Single Au layer/Single Cu layer, Single Ag layer/Single Ni layer/Single Cu layer, Single Au layer/Single Ni layer/Single Cu layer, Single Sn layer/Single Au layer /Single Ag layer/Single Ni layer/Single Cu layer, etc.

Each bonding pad 26 corresponds to one opening 242 among the plurality of openings 242 of the Nth insulating layer 24 and is formed to fill the corresponding opening 242.

In a specific embodiment, each bonding pad 26 may be a Sn-Bi alloy layer, Au-Sn-Bi alloy layer, Sn-Cu alloy layer, Sn-Bi-Zn alloy layer, Sn-Bi-Sb alloy layer, etc. .

Each light-emitting element 28 corresponds to at least two of the plurality of bonding pads 26 and is electrically connected to its corresponding bonding pad 26. In FIG. 4, only one light-emitting element 28 corresponding to two bonding pads 26 is shown as a representative.

In a specific embodiment, the single light-emitting element 28 may be a packaged light-emitting diode element or a bare-chip light-emitting diode, but the invention is not limited to this. The single light emitting element 28 may be an element that emits light from its top, or an element that emits light from its side.

Furthermore, as also shown in FIG. 5, the light-emitting device 2 according to the second preferred embodiment of the present invention further includes a light-transmitting resin layer 29. The light-transmitting resin layer 29 is formed to cover the N-th insulating layer 24 and the plurality of light-emitting elements 28. The transparent resin layer 29 is not shown in FIG. 4. In a specific embodiment, the light-transmitting resin layer 29 can be formed by coating an ultraviolet-curing resin and then irradiating it with ultraviolet light, but the invention is not limited to this.

In practical applications, the light-emitting device 2 according to the second preferred embodiment of the present invention can be used for light-emitting keyboards, lamps, and the like.

Please refer to FIG. 6, FIG. 7 and FIG. 8, which schematically depict the structure of each stage of the method of manufacturing the light-emitting device 1 shown in FIG. 2 according to the third preferred embodiment of the present invention. The light emitting device 1 includes N layers of circuit layers 12 and N layers of insulating layers 14 alternately stacked with the N layers of circuit layers 12, where N is an integer equal to or greater than 2. N circuit patterns are provided. Each circuit pattern corresponds to a layer of circuit layer 12. N opening patterns are provided. Each opening pattern corresponds to an insulating layer 14.

First, as shown in FIG. 6, the method according to the third preferred embodiment of the present invention is to prepare the insulating substrate 10.

Next, as shown in FIG. 6, the method according to the third preferred embodiment of the present invention is to form the first circuit layer 12 on the insulating substrate 10 according to the first circuit pattern corresponding to the first circuit layer 12. superior.

Next, as shown in FIG. 7, the method according to the third preferred embodiment of the present invention is to form a j-th insulating layer 14 to cover the j-th circuit layer 12, where j is an integer index ranging from 1 to N .

Next, as shown in FIG. 7, the method according to the third preferred embodiment of the present invention forms the (i+1)th circuit pattern corresponding to the (i+1)th circuit layer 12 to form the (i+1)th circuit pattern. +1) layer circuit layer 12, where i is an integer index ranging from 1 to (N-1).

Next, as also shown in FIG. 7, the method according to the third preferred embodiment of the present invention forms the jth insulating layer 14 at the same time, and forms the jth opening pattern corresponding to the jth opening pattern of the jth insulating layer 14. A plurality of openings 142 of the insulating layer 14, wherein the circuit layer 12 of the j-th layer is exposed in the plurality of openings 142 of the insulating layer 14 of the j-th layer.

In a specific embodiment, the insulating layer 14 can be formed by coating the circuit layer 12 with a UV-curing resin and then irradiating it with UV light, but the invention is not limited to this. The insulating layer 14 can be formed by a printing process, but the invention is not limited to this. When the insulating layer 14 is formed, a plurality of openings 142 are also formed. It should be emphasized here that the plurality of openings 142 do not need to be formed by a drilling process, which saves time in manufacturing and has high precision.

In particular, each circuit layer 12 includes its own electroless plating catalyst layer 122 and its own metal layer 124 covering the electroless plating catalyst layer 122. The electroless plating catalyst layer 122 of the (i+1)-th circuit layer 12 extends to cover the inner wall of each opening 142 of the i-th insulating layer 14. The metal layer 124 of the (i+1)th circuit layer 12 extends to cover the electroless plating catalyst layer 122 in each opening 142 of the i-th insulating layer 14. The (i+1)th insulating layer 14 covers a plurality of openings 142 of the i-th insulating layer 14. To emphasize again, the (i+1)th circuit layer 12 and the i-th circuit layer 12 achieve electrical properties by filling the electroless plating catalyst layer 122 and the metal layer 124 in the plurality of openings 142 of the i-th insulating layer 14 connect.

In a specific embodiment, the electroless plating catalyst layer 122 of each circuit layer 12 may be formed of metal paste (for example, silver paste, copper paste) or electroless plating catalyst ink. The electroless plating catalyst layer 122 can be formed by a printing process, but the invention is not limited to this.

In a specific embodiment, the metal layer 124 of each circuit layer 12 is deposited on the electroless plating catalyst layer 122 by an electroless plating process.

Next, as shown in FIG. 8, the method according to the third preferred embodiment of the present invention is to form a plurality of bonding pads 16, wherein each bonding pad 16 corresponds to one of the plurality of openings 142 of the Nth insulating layer 14 The opening 142 is filled with the corresponding opening 142.

Finally, the method according to the third preferred embodiment of the present invention is to electrically bond a plurality of light-emitting elements 18 to a plurality of bonding pads 16, wherein each light-emitting element 18 corresponds to at least two of the plurality of bonding pads 16. 16, and electrically bonded to its corresponding solder pad 16 to complete the light-emitting device 1 as shown in FIG. 2.

Furthermore, as also shown in FIG. 2, the method of the third preferred embodiment is to form a light-transmitting resin layer 19 to cover the Nth insulating layer 14 and the plurality of light-emitting elements 18. In a specific embodiment, the light-transmitting resin layer 19 can be formed by coating an ultraviolet-curing resin and then irradiating it with ultraviolet light, but the invention is not limited to this.

Please refer to FIGS. 9, 10 and 11, which schematically depict the structure of each stage of the method of manufacturing the light-emitting device 2 shown in FIG. 5 according to the fourth preferred embodiment of the present invention. The light emitting device 2 includes N layers of circuit layers 22 and N layers of insulating layers 24 alternately stacked with the N layers of circuit layers 22, where N is an integer equal to or greater than 2.

First, as shown in FIG. 9, the method according to the fourth preferred embodiment of the present invention is to prepare the insulating substrate 20.

Next, as shown in FIG. 9, the method according to the fourth preferred embodiment of the present invention is to form the first circuit layer 22 on the insulating substrate 20 according to the first circuit pattern corresponding to the first circuit layer 22. superior.

Next, as shown in FIG. 10, the method according to the fourth preferred embodiment of the present invention is to form a j-th insulating layer 24 to cover the j-th circuit layer 22, where j is an integer index ranging from 1 to N .

Next, as shown in FIG. 10, the method according to the fourth preferred embodiment of the present invention forms the (i+1)th circuit pattern corresponding to the (i+1)th circuit layer 22 to form the (i+1)th circuit pattern. +1) layer circuit layer 22, where i is an integer index ranging from 1 to (N-1).

Next, as also shown in FIG. 10, the method according to the fourth preferred embodiment of the present invention forms the jth insulating layer 24 at the same time, and forms the jth opening pattern corresponding to the jth opening pattern of the jth insulating layer 24. A plurality of openings 242 of the insulating layer 24, wherein the circuit layer 22 of the j-th layer is exposed in the plurality of openings 242 of the insulating layer 24 of the j-th layer.

In a specific embodiment, the insulating layer 24 can be formed by coating the circuit layer 22 with ultraviolet curable resin and then irradiating it with ultraviolet light, but the present invention is not limited to this. The insulating layer 24 can be formed by a printing process, but the invention is not limited to this. When the insulating layer 24 is formed, a plurality of openings 242 are also formed. It should be emphasized here that the plurality of openings 242 do not need to be formed by a drilling process, which saves time in manufacturing and has high precision.

In particular, each circuit layer 22 includes its own electroless plating catalyst layer 222 and its own metal layer 224 covering the electroless plating catalyst layer 222. The electroless plating catalyst layer 22 of the (i+1)th circuit layer 22 fills up each opening 242 of the i-th insulating layer 24. Again, the (i+1)th circuit layer 12 and the i-th circuit layer 12 are electrically connected by the electroless plating catalyst layer 122 filled in the plurality of openings 142 of the i-th insulating layer 14.

In a specific embodiment, the electroless plating catalyst layer 222 of each circuit layer 22 may be formed of a metal paste (for example, silver paste, copper paste) or an electroless plating catalyst ink. The electroless plating catalyst layer 222 can be formed by a printing process, but the invention is not limited to this.

In a specific embodiment, the metal layer 224 of each circuit layer 22 is deposited on the electroless plating catalyst layer 222 by an electroless plating process.

Next, as shown in FIG. 11, the method according to the fourth preferred embodiment of the present invention is to form a plurality of bonding pads 26, wherein each bonding pad 26 corresponds to one of the plurality of openings 242 of the Nth insulating layer 24 The opening 242 is filled with the corresponding opening 242.

Finally, the method according to the fourth preferred embodiment of the present invention is to electrically connect a plurality of light-emitting elements 28 to a plurality of bonding pads 26, wherein each light-emitting element 28 corresponds to at least two of the plurality of bonding pads 26 26, and electrically bonded to its corresponding bonding pad 26, which completes the light-emitting device 2 as shown in FIG. 5.

Furthermore, as also shown in FIG. 5, the method of the fourth preferred embodiment is to form a light-transmissive resin layer 29 to cover the Nth insulating layer 24 and the plurality of light-emitting elements 28. In a specific embodiment, the light-transmitting resin layer 29 can be formed by coating an ultraviolet-curing resin and then irradiating it with ultraviolet light, but the invention is not limited to this.

Different from the prior art, the light-emitting device of the present invention has a plurality of openings and an insulating layer formed together without drilling, and then the electroless plating catalytic layer and the metal layer forming the circuit layer are filled with the plurality of openings to form a plurality of conductive vias. Thereby, the light-emitting device of the present invention saves time in manufacturing and has a high yield.

Based on the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the present invention can be described more clearly, rather than limiting the aspect of the present invention by the preferred embodiments disclosed above. On the contrary, its purpose is to cover various changes and equivalent arrangements within the scope of the patent for which the present invention is intended. Therefore, the aspect of the patent scope applied for by the present invention should be interpreted in the broadest way based on the above description, so as to cover all possible changes and equivalent arrangements.

1: Light-emitting device 10: Insulating substrate 12: Circuit layer 122: Electroless Plating Catalytic Layer 124: Metal layer 14: Insulation layer 142: Open 16: Solder pad 18: Light-emitting element 19: Light-transmitting resin layer 2: Light-emitting device 20: Insulating base material 22: circuit layer 222: Electroless Plating Catalytic Layer 224: Metal layer 24: Insulation layer 242: open 26: Solder pad 28: Light-emitting element 29: Light-transmitting resin layer 3: illuminated keyboard 30: base 300: first through hole 32: Button 322: Scissor support device 34: Membrane switch 340: second through hole

Figure 1 is a top view of a light-emitting device according to a first preferred embodiment of the present invention; Fig. 2 is a partial cross-sectional view of the light-emitting device in Fig. 1 along the line A-A; 3 is a cross-sectional view of an example of the light-emitting device according to the first preferred embodiment of the present invention applied to a light-emitting keyboard; Figure 4 is a top view of a light emitting device according to a second preferred embodiment of the present invention; Fig. 5 is a cross-sectional view of the light-emitting device in Fig. 4 along the line B-B; 6, FIG. 7, and FIG. 8 are schematic diagrams of each stage of the method for manufacturing a light-emitting device according to a third preferred embodiment of the present invention; FIG. 9, FIG. 10, and FIG. 11 are schematic diagrams of each stage of the method for manufacturing a light-emitting device according to the fourth preferred embodiment of the present invention.

1: Light-emitting device

10: Insulating substrate

12: Circuit layer

122: Electroless Plating Catalytic Layer

124: Metal layer

14: Insulation layer

142: Open

16: Solder pad

18: Light-emitting element

19: Light-transmitting resin layer

Claims (12)

A light emitting device, comprising: An insulating substrate; N circuit layers, N is an integer equal to or greater than 2; N insulating layers, the N circuit layers and the N insulating layers are sequentially and alternately stacked on the insulating substrate , Where N circuit patterns are provided, and each circuit pattern corresponds to a circuit layer. The first circuit layer of the N circuit layers is formed on the insulating substrate according to its corresponding circuit pattern. ) Layer circuit layer is formed on the i-th insulating layer according to its corresponding circuit pattern, i is an integer index ranging from 1 to (N-1), N opening patterns are provided, and each opening pattern corresponds to one layer Insulating layer, the j-th insulating layer is formed to cover the j-th circuit layer and to form a plurality of openings according to the corresponding opening pattern. The j-th circuit layer is exposed to the plurality of openings in the j-th insulating layer, j It is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and a separate metal layer covering the electroless plating catalyst layer. The (i+1)th circuit layer The electroless plating catalytic layer extends to cover the inner wall of each opening of the i-th insulating layer, and the metal layer of the (i+1)-th circuit layer extends to cover the i-th insulating layer The electroless plating catalyst layer in each opening, the (i+1)th insulating layer and the plural openings covering the i-th insulating layer; plural soldering pads, each soldering pad corresponds to the plural number of the Nth insulating layer One of the openings is formed to fill its corresponding opening; and a plurality of light-emitting elements, each of which corresponds to at least two of the plurality of bonding pads and is electrically connected to its corresponding bonding pad. The light-emitting device according to claim 1, wherein the electroless plating catalyst layer of each circuit layer is formed of a metal paste or an electroless plating catalyst ink. The light-emitting device according to claim 1, further comprising a light-transmitting resin layer formed to cover the Nth insulating layer and the plurality of light-emitting elements. A light emitting device, comprising: An insulating substrate; N circuit layers, N is an integer equal to or greater than 2; N insulating layers, the N circuit layers and the N insulating layers are sequentially and alternately stacked on the insulating substrate , Where N circuit patterns are provided, and each circuit pattern corresponds to a circuit layer. The first circuit layer of the N circuit layers is formed on the insulating substrate according to its corresponding circuit pattern. ) Layer circuit layer is formed on the i-th insulating layer according to its corresponding circuit pattern, i is an integer index ranging from 1 to (N-1), N opening patterns are provided, and each opening pattern corresponds to one layer Insulating layer, the j-th insulating layer is formed to cover the j-th circuit layer and to form a plurality of openings according to the corresponding opening pattern. The j-th circuit layer is exposed to the plurality of openings in the j-th insulating layer, j It is an integer index ranging from 1 to N. Each circuit layer includes its own electroless plating catalyst layer and a separate metal layer covering the electroless plating catalyst layer. The (i+1)th circuit layer The electroless plating catalyst layer and fills each opening of the i-th insulating layer; a plurality of solder pads, each of which corresponds to one of the openings of the N-th insulating layer and is formed to fill its corresponding And a plurality of light-emitting elements, each light-emitting element corresponds to at least two of the plurality of bonding pads and is electrically bonded to its corresponding bonding pad. The light-emitting device according to claim 4, wherein the electroless plating catalyst layer of each circuit layer is formed of a metal paste or an electroless plating catalyst ink. The light-emitting device according to claim 4, further comprising a light-transmitting resin layer formed to cover the Nth insulating layer and the plurality of light-emitting elements. A method of manufacturing a light-emitting device, the light-emitting device comprising N layers of circuit layers and N layers of insulating layers alternately stacked with the N layers of circuit layers, N is an integer equal to or greater than 2, and N circuit patterns are provided, each The circuit pattern corresponds to a circuit layer, and N opening patterns are provided, and each opening pattern corresponds to an insulating layer. The method includes the following steps: Prepare an insulating substrate; according to the first circuit pattern corresponding to the first circuit layer, form the first circuit layer on the insulating substrate; according to the (i+1)th (i+1)th corresponding to the (i+1)th circuit layer ) Circuit patterns to form the (i+1)th circuit layer, where i is an integer index ranging from 1 to (N-1); the jth insulating layer is formed to cover the jth circuit layer and correspond to The j-th opening pattern of the j-th insulating layer forms a plurality of openings of the j-th insulating layer, wherein the circuit layer of the j-th layer is exposed in the plurality of openings of the j-th insulating layer, and j ranges from 1 to N An integer index in which each circuit layer includes its own electroless plating catalytic layer and a separate metal layer covering the electroless plating catalytic layer, the electroless plating catalytic layer of the (i+1)th circuit layer It extends to cover the inner wall of each opening of the i-th insulating layer, and the metal layer of the (i+1)-th circuit layer extends to cover the inner wall of each opening of the i-th insulating layer Electroless plating catalyst layer, the (i+1)th insulating layer and covering the plurality of openings of the i-th insulating layer; forming a plurality of soldering pads, each of which corresponds to the plurality of openings of the Nth insulating layer One opening and filling its corresponding opening; and electrically bonding a plurality of light-emitting elements to the plurality of bonding pads, wherein each light-emitting element corresponds to at least two bonding pads of the plurality of bonding pads and is electrically bonded to its corresponding On the solder pads. The method according to claim 7, wherein the electroless plating catalyst layer of each circuit layer is formed by a metal paste or an electroless plating catalyst ink. The method described in claim 7, further comprising the following steps: A light-transmitting resin layer is formed to cover the Nth insulating layer and the plurality of light-emitting elements. A method of manufacturing a light-emitting device, the light-emitting device comprising N layers of circuit layers and N layers of insulating layers alternately stacked with the N layers of circuit layers, N is an integer equal to or greater than 2, and N circuit patterns are provided, each The circuit pattern corresponds to a circuit layer, and N opening patterns are provided, and each opening pattern corresponds to an insulating layer. The method includes the following steps: Prepare an insulating substrate; according to the first circuit pattern corresponding to the first circuit layer, form the first circuit layer on the insulating substrate; according to the (i+1)th (i+1)th corresponding to the (i+1)th circuit layer ) Circuit patterns to form the (i+1)th circuit layer, where i is an integer index ranging from 1 to (N-1); the jth insulating layer is formed to cover the jth circuit layer and correspond to The j-th opening pattern of the j-th insulating layer forms a plurality of openings of the j-th insulating layer, wherein the circuit layer of the j-th layer is exposed in the plurality of openings of the j-th insulating layer, and j ranges from 1 to N An integer index in which each circuit layer includes its own electroless plating catalytic layer and a separate metal layer covering the electroless plating catalytic layer, the electroless plating catalytic layer of the (i+1)th circuit layer And fill each opening of the i-th insulating layer; form a plurality of solder pads, each of which corresponds to one of the openings of the N-th insulating layer and fills its corresponding opening; and electrical Bonding a plurality of light-emitting elements to the plurality of bonding pads, wherein each light-emitting element corresponds to at least two bonding pads of the plurality of bonding pads and is electrically bonded to its corresponding bonding pad. The method according to claim 10, wherein the electroless plating catalytic layer of each circuit layer is formed by a metal paste or an electroless plating catalytic ink. The method described in claim 10 further includes the following steps: A light-transmitting resin layer is formed to cover the Nth insulating layer and the plurality of light-emitting elements.

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