TWI741750B - 晶圓處理沉積屏蔽部件 - Google Patents
晶圓處理沉積屏蔽部件 Download PDFInfo
- Publication number
- TWI741750B TWI741750B TW109128551A TW109128551A TWI741750B TW I741750 B TWI741750 B TW I741750B TW 109128551 A TW109128551 A TW 109128551A TW 109128551 A TW109128551 A TW 109128551A TW I741750 B TWI741750 B TW I741750B
- Authority
- TW
- Taiwan
- Prior art keywords
- collimator
- aspect ratio
- chamber
- hexagonal
- orifices
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000002093 peripheral effect Effects 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 36
- 238000005477 sputtering target Methods 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 238000005240 physical vapour deposition Methods 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims 7
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- 230000004907 flux Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Optics & Photonics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17262709P | 2009-04-24 | 2009-04-24 | |
| US61/172,627 | 2009-04-24 | ||
| US12/482,846 US20090308739A1 (en) | 2008-06-17 | 2009-06-11 | Wafer processing deposition shielding components |
| US12/482,713 US20090308732A1 (en) | 2008-06-17 | 2009-06-11 | Apparatus and method for uniform deposition |
| US12/482,713 | 2009-06-11 | ||
| US12/482,846 | 2009-06-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202102703A TW202102703A (zh) | 2021-01-16 |
| TWI741750B true TWI741750B (zh) | 2021-10-01 |
Family
ID=43011685
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110122261A TWI789790B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW099110795A TWI527921B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108140207A TWI715279B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108104471A TWI695078B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW111117130A TWI844851B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW109128551A TWI741750B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW105104782A TWI605144B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW106134224A TWI654329B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110122261A TWI789790B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW099110795A TWI527921B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108140207A TWI715279B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW108104471A TWI695078B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW111117130A TWI844851B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104782A TWI605144B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
| TW106134224A TWI654329B (zh) | 2009-04-24 | 2010-04-07 | 晶圓處理沉積屏蔽部件 |
Country Status (4)
| Country | Link |
|---|---|
| KR (6) | KR102186535B1 (ko) |
| CN (2) | CN102301451A (ko) |
| TW (8) | TWI789790B (ko) |
| WO (1) | WO2010123680A2 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8702918B2 (en) * | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
| KR20160002543A (ko) | 2014-06-30 | 2016-01-08 | 세메스 주식회사 | 기판 처리 장치 |
| US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
| US9887073B2 (en) | 2015-02-13 | 2018-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition system and physical vapor depositing method using the same |
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| JP6088083B1 (ja) * | 2016-03-14 | 2017-03-01 | 株式会社東芝 | 処理装置及びコリメータ |
| US11424112B2 (en) * | 2017-11-03 | 2022-08-23 | Varian Semiconductor Equipment Associates, Inc. | Transparent halo assembly for reduced particle generation |
| CN116114126A (zh) | 2021-06-11 | 2023-05-12 | 肖特日本株式会社 | 气密端子及该气密端子的制造方法 |
| US20220406583A1 (en) * | 2021-06-18 | 2022-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
| KR102594388B1 (ko) * | 2021-08-24 | 2023-10-27 | 전주대학교 산학협력단 | Mec 환경에서 긴급 데이터 전송을 위한 sdn 기반 패킷 스케줄링 방법 |
| CN115449762A (zh) * | 2022-08-22 | 2022-12-09 | 无锡尚积半导体科技有限公司 | 一种用于磁控溅射设备的准直器及磁控溅射设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| JPH093639A (ja) * | 1995-06-23 | 1997-01-07 | Applied Materials Inc | Ｐｖｄ装置 |
| JPH11200029A (ja) * | 1998-01-13 | 1999-07-27 | Victor Co Of Japan Ltd | スパッタリング装置 |
| US20030015421A1 (en) | 2001-07-20 | 2003-01-23 | Applied Materials, Inc. | Collimated sputtering of cobalt |
| US6780294B1 (en) * | 2002-08-19 | 2004-08-24 | Set, Tosoh | Shield assembly for substrate processing chamber |
| JP2004083984A (ja) * | 2002-08-26 | 2004-03-18 | Fujitsu Ltd | スパッタリング装置 |
| JP2007273490A (ja) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
-
2010
- 2010-04-06 WO PCT/US2010/030116 patent/WO2010123680A2/en active Application Filing
- 2010-04-06 CN CN2010800064499A patent/CN102301451A/zh active Pending
- 2010-04-06 KR KR1020197025908A patent/KR102186535B1/ko active IP Right Grant
- 2010-04-06 CN CN201710120243.2A patent/CN107039230A/zh active Pending
- 2010-04-06 KR KR1020217013278A patent/KR102374073B1/ko active IP Right Grant
- 2010-04-06 KR KR1020187035627A patent/KR102020010B1/ko active IP Right Grant
- 2010-04-06 KR KR1020177017742A patent/KR101929971B1/ko active IP Right Grant
- 2010-04-06 KR KR1020117028097A patent/KR101782355B1/ko active IP Right Grant
- 2010-04-06 KR KR1020207034181A patent/KR102262978B1/ko active IP Right Grant
- 2010-04-07 TW TW110122261A patent/TWI789790B/zh active
- 2010-04-07 TW TW099110795A patent/TWI527921B/zh active
- 2010-04-07 TW TW108140207A patent/TWI715279B/zh active
- 2010-04-07 TW TW108104471A patent/TWI695078B/zh active
- 2010-04-07 TW TW111117130A patent/TWI844851B/zh active
- 2010-04-07 TW TW109128551A patent/TWI741750B/zh not_active IP Right Cessation
- 2010-04-07 TW TW105104782A patent/TWI605144B/zh active
- 2010-04-07 TW TW106134224A patent/TWI654329B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201634719A (zh) | 2016-10-01 |
| KR20200136061A (ko) | 2020-12-04 |
| TWI844851B (zh) | 2024-06-11 |
| KR102186535B1 (ko) | 2020-12-03 |
| TW202136549A (zh) | 2021-10-01 |
| TWI695078B (zh) | 2020-06-01 |
| KR20190105132A (ko) | 2019-09-11 |
| KR102020010B1 (ko) | 2019-09-09 |
| KR20180133566A (ko) | 2018-12-14 |
| KR20210052600A (ko) | 2021-05-10 |
| TW201920726A (zh) | 2019-06-01 |
| TW202000961A (zh) | 2020-01-01 |
| TW201814075A (zh) | 2018-04-16 |
| WO2010123680A2 (en) | 2010-10-28 |
| KR101929971B1 (ko) | 2018-12-18 |
| KR20170076824A (ko) | 2017-07-04 |
| TW202307237A (zh) | 2023-02-16 |
| TW202102703A (zh) | 2021-01-16 |
| TWI527921B (zh) | 2016-04-01 |
| TWI605144B (zh) | 2017-11-11 |
| TW201100571A (en) | 2011-01-01 |
| TWI654329B (zh) | 2019-03-21 |
| KR102374073B1 (ko) | 2022-03-11 |
| TWI789790B (zh) | 2023-01-11 |
| CN102301451A (zh) | 2011-12-28 |
| KR20140014378A (ko) | 2014-02-06 |
| KR102262978B1 (ko) | 2021-06-08 |
| CN107039230A (zh) | 2017-08-11 |
| TWI715279B (zh) | 2021-01-01 |
| WO2010123680A3 (en) | 2011-01-13 |
| KR101782355B1 (ko) | 2017-09-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |