TWI741176B - Substrate strip and electronic component package having the same - Google Patents
Substrate strip and electronic component package having the same Download PDFInfo
- Publication number
- TWI741176B TWI741176B TW107114071A TW107114071A TWI741176B TW I741176 B TWI741176 B TW I741176B TW 107114071 A TW107114071 A TW 107114071A TW 107114071 A TW107114071 A TW 107114071A TW I741176 B TWI741176 B TW I741176B
- Authority
- TW
- Taiwan
- Prior art keywords
- solder resist
- resist layer
- layer
- electronic component
- laminated body
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 156
- 230000002787 reinforcement Effects 0.000 claims abstract description 25
- 230000003014 reinforcing effect Effects 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000010410 layer Substances 0.000 description 197
- 238000000034 method Methods 0.000 description 22
- 239000011888 foil Substances 0.000 description 20
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 7
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- 238000005516 engineering process Methods 0.000 description 6
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- 239000011256 inorganic filler Substances 0.000 description 3
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
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- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
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- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
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- 238000005452 bending Methods 0.000 description 1
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- 239000004927 clay Substances 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 description 1
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- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
Abstract
Description
以下說明是有關於一種基底條與具有其之電子部件封裝。 The following description is about a base strip and electronic component packaging with it.
由於半導體封裝技術的發展,封裝基底已變得非常緻密且小型化,因此,需要一種超細印刷電路板。為製作此種超細印刷電路板,確保印刷電路板的剛性非常重要。當剛性不足時,基底會嚴重翹曲且難以進行封裝製程中的正常製程。 Due to the development of semiconductor packaging technology, the packaging substrate has become very dense and miniaturized. Therefore, an ultra-fine printed circuit board is required. In order to make such an ultra-fine printed circuit board, it is very important to ensure the rigidity of the printed circuit board. When the rigidity is insufficient, the substrate will be severely warped and it is difficult to perform the normal process in the packaging process.
日本專利申請案第2009-141121號闡述了一種配線基底的實例。 Japanese Patent Application No. 2009-141121 describes an example of a wiring substrate.
本發明的目的在於提供一種可減少彎曲的基底條(substrate strip)與具有其之電子部件封裝。 The object of the present invention is to provide a substrate strip that can reduce bending and an electronic component package with the substrate strip.
根據本發明的一個態樣,提供一種基底條,所述基底條包括:積層體,由絕緣層及電路層構成;第一阻焊層,形成於所 述積層體上;加強構件,形成於所述第一阻焊層上;以及第二阻焊層,形成於所述第一阻焊層上以覆蓋所述加強構件,其中所述積層體被分成單元區域及虛設區域,且其中所述加強構件及所述第二阻焊層形成於所述虛設區域上。 According to one aspect of the present invention, there is provided a base strip, the base strip comprising: a laminated body composed of an insulating layer and a circuit layer; a first solder resist layer formed on the On the laminated body; a reinforcing member formed on the first solder resist layer; and a second solder resist layer formed on the first solder resist layer to cover the reinforcing member, wherein the laminated body is divided into A unit area and a dummy area, and wherein the reinforcing member and the second solder resist layer are formed on the dummy area.
根據本發明的另一態樣,提供一種電子部件封裝,所述電子部件封裝包括:基底條,被分成單元區域及虛設區域;以及電子部件,安裝於所述單元區域上,其中所述基底條包括:積層體,由絕緣層及電路層構成;第一阻焊層,形成於所述積層體上;加強構件,形成於所述第一阻焊層上;以及第二阻焊層,形成於所述第一阻焊層上以覆蓋所述加強構件,其中所述加強構件及所述第二阻焊層形成於所述虛設區域上。 According to another aspect of the present invention, there is provided an electronic component package. The electronic component package includes: a base strip divided into a unit area and a dummy area; and an electronic component mounted on the unit area, wherein the base strip It includes: a laminated body composed of an insulating layer and a circuit layer; a first solder resist layer formed on the laminated body; a reinforcing member formed on the first solder resist layer; and a second solder resist layer formed on the The first solder resist layer covers the reinforcement member, wherein the reinforcement member and the second solder resist layer are formed on the dummy area.
100:積層體 100: layered body
110:絕緣層 110: Insulation layer
120、121、122:電路層 120, 121, 122: circuit layer
121':端子墊 121': terminal pad
130:通孔 130: Through hole
200:第一阻焊層 200: The first solder mask
200a:上部阻焊層 200a: Upper solder mask
200b:下部阻焊層 200b: Lower solder mask
210:空腔 210: Cavity
220:開口區域 220: open area
300、310、320:加強構件 300, 310, 320: strengthening member
330:基準標記的圖案 330: Pattern of fiducial mark
400:第二阻焊層 400: The second solder mask
410:開口 410: open
420:模製澆口 420: Molded gate
430:模製構件 430: Molded components
500:電子部件 500: electronic components
510:接合構件 510: Joining member
520:底部填充膠 520: underfill glue
B:邊界 B: boundary
D:虛設區域 D: Dummy area
M:圖案遮罩 M: pattern mask
R:阻鍍層 R: Anti-plating layer
S1:金屬箔 S1: Metal foil
S2:晶種層 S2: Seed layer
U:單元區域 U: unit area
U':單元 U': unit
圖1是示出根據本發明實施例的基底條的剖視圖。 Fig. 1 is a cross-sectional view showing a base strip according to an embodiment of the present invention.
圖2是示出根據本發明實施例的基底條的平面圖。 Fig. 2 is a plan view showing a base strip according to an embodiment of the present invention.
圖3是示出根據本發明實施例的電子部件封裝的剖視圖。 FIG. 3 is a cross-sectional view showing an electronic component package according to an embodiment of the present invention.
圖4示出根據本發明實施例的電子部件封裝的模製製程。 Fig. 4 shows a molding process of an electronic component package according to an embodiment of the present invention.
圖5至圖12是示出根據本發明實施例的在製造基底條的方法中所用的製程的剖視圖。 5 to 12 are cross-sectional views showing the manufacturing process used in the method of manufacturing the base strip according to the embodiment of the present invention.
在所有圖中及詳細說明通篇中,相同參考編號指代相同的元件。所述圖式可能未必按比例繪製,且為清晰、說明及方便起見,可誇大圖中的元件的相對大小、比例及描繪。 In all figures and throughout the detailed description, the same reference numbers refer to the same elements. The drawings may not necessarily be drawn to scale, and for clarity, description, and convenience, the relative sizes, proportions, and depictions of the elements in the drawings may be exaggerated.
提供以下詳細說明是為了幫助讀者獲得對本文所述的方法、設備及/或系統的全面理解。然而,本文所述的方法、設備及/或系統的各種變化、修改及等效形式將對此項技術中具有通常知識者顯而易見。本文所述的操作的順序僅為實例,且並非受限於本文所述的順序,而是除了必須按某一次序發生的操作以外,可如將對此項技術中具有通常知識者顯而易見般進行改變。此外,為增加清晰性及簡明性,對此項技術中具有通常知識者眾所習知的功能及構造的說明可被省略。 The following detailed description is provided to help readers gain a comprehensive understanding of the methods, equipment and/or systems described in this article. However, various changes, modifications and equivalent forms of the methods, devices and/or systems described herein will be obvious to those with ordinary knowledge in the art. The order of operations described herein is only an example, and is not limited to the order described herein, but except for operations that must occur in a certain order, it can be performed as will be obvious to those with ordinary knowledge in the art. Change. In addition, in order to increase clarity and conciseness, the description of the functions and structures known to those with ordinary knowledge in this technology may be omitted.
本文所述的特徵可被實施為諸多不同的形式,而不應被視為僅限於本文所述的實例。更確切而言,提供本文所述的實例是為了使本揭露內容將透徹及完整,且將向此項技術中具有通常知識者傳達本揭露的全部範圍。 The features described herein can be implemented in many different forms and should not be regarded as limited to the examples described herein. To be more precise, the examples described herein are provided so that the content of this disclosure will be thorough and complete, and will convey the full scope of the disclosure to those skilled in the art.
除非另外定義,否則本文所使用的包括技術用語及科學用語的所有用語具有與本揭露所屬技術中具有通常知識者對所述用語所通常理解的含義相同的含義。在常用字典中定義的任何用語應被理解為在相關技術的上下文中具有相同的含義,且除非另外明確地定義,否則不應被解釋為具有理想或過於正式的含義。 Unless otherwise defined, all terms used herein including technical terms and scientific terms have the same meaning as those commonly understood by those with ordinary knowledge in the technology to which this disclosure belongs. Any term defined in a commonly used dictionary should be understood as having the same meaning in the context of related technologies, and unless clearly defined otherwise, it should not be interpreted as having an ideal or overly formal meaning.
無論圖編號如何,相同或對應的部件將給出相同的參考編號,且將不再重覆對相同或對應的部件進行任何冗餘說明。本揭露的說明通篇中,當確定闡述某一相關傳統技術來回避本揭露的要點時,將省略相干的詳細說明。在闡述各種部件時可使用例 如「第一」及「第二」等用語,但以上部件不應侷限於以上用語。以上用語僅用於區分各個部件。在附圖中,一些部件可被誇大、省略或簡要說明,且部件的尺寸未必反映該些部件的實際尺寸。 Regardless of the figure number, the same or corresponding parts will be given the same reference numbers, and any redundant description of the same or corresponding parts will not be repeated. Throughout the description of this disclosure, when it is determined that a certain related traditional technology is described to avoid the main points of this disclosure, related detailed descriptions will be omitted. Examples can be used when explaining various components Terms such as "first" and "second", but the above components should not be limited to the above terms. The above terms are only used to distinguish each component. In the drawings, some components may be exaggerated, omitted or briefly described, and the size of the components does not necessarily reflect the actual size of the components.
以下,將參照附圖詳細闡述本揭露的某些實施例。 Hereinafter, certain embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
圖1是示出根據本發明實施例的基底條的剖視圖,且圖2是示出根據本發明實施例的基底條的平面圖。 FIG. 1 is a cross-sectional view showing a base strip according to an embodiment of the present invention, and FIG. 2 is a plan view showing a base strip according to an embodiment of the present invention.
參照圖1及圖2,根據本發明實施例的基底條包括積層體100、第一阻焊層200、加強構件300以及第二阻焊層400。
1 and 2, the base strip according to the embodiment of the present invention includes a laminated
積層體100是由絕緣層110及電路層120構成,且具有一個表面及另一表面。此處,除側表面以外,積層體100的所述一個表面與所述另一表面彼此相對。在本發明中,積層體100的一個表面是上面安裝有電子部件500的表面,且另一表面是接合至主板的表面。在圖1中,積層體100的上表面是所述一個表面,且下表面是所述另一表面。
The laminated
積層體100的絕緣層110是由絕緣材料(例如樹脂)形成且為薄板狀。絕緣層110的樹脂可為各種材料,例如熱固性樹脂及熱塑性樹脂,且更具體而言為環氧樹脂、聚醯亞胺等。環氧樹脂的實例包括:萘環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛清漆環氧樹脂、甲酚酚醛清漆環氧樹脂(cresol novolac epoxy resin)、橡膠改質環氧樹脂、脂環族環氧樹脂、矽系環氧樹脂、氮系環氧樹脂、磷系環氧樹脂等。然而,並非僅限於此。
The insulating
絕緣層110可為在樹脂中包含纖維加強構件300(例如玻璃布)的預浸體(prepreg,PPG)。絕緣層110可為在樹脂中填充無機填料(例如二氧化矽)的構成膜。作為此種構成膜,可使用味之素構成膜(ajinomoto build-up film,ABF)等。
The insulating
構成膜中所包含的無機填料可為二氧化矽(SiO2)、硫酸鋇(BaSO4)、氧化鋁(Al2O3)、或者前述兩種或更多種的組合。無機填料可更包括:碳酸鈣、碳酸鎂、飛灰、天然二氧化矽、合成二氧化矽、高嶺土、黏土、氧化鈣、氧化鎂、氧化鈦、氧化鋅、氫氧化鈣、氫氧化鋁、氫氧化鎂、滑石、雲母、水滑石、矽酸鋁、矽酸鎂、矽酸鈣、煆燒滑石、矽灰石、鈦酸鉀、硫酸鎂、硫酸鈣或磷酸鎂。然而,並非僅限於此。 The inorganic filler included in the constituent film may be silicon dioxide (SiO 2 ), barium sulfate (BaSO 4 ), aluminum oxide (Al 2 O 3 ), or a combination of two or more of the foregoing. Inorganic fillers may further include: calcium carbonate, magnesium carbonate, fly ash, natural silica, synthetic silica, kaolin, clay, calcium oxide, magnesium oxide, titanium oxide, zinc oxide, calcium hydroxide, aluminum hydroxide, hydrogen Magnesium oxide, talc, mica, hydrotalcite, aluminum silicate, magnesium silicate, calcium silicate, braised talc, wollastonite, potassium titanate, magnesium sulfate, calcium sulfate or magnesium phosphate. However, it is not limited to this.
積層體100可利用積層於彼此上方的多個絕緣層110形成。儘管在圖1中示出了三個絕緣層110,但絕緣層110的數目不受限制。
The
積層體100的電路層120是被圖案化以傳輸電訊號,被形成為具有預定寬度及厚度,且根據電路設計而成形的導體。考慮到電力傳導的性質,電路層120可由金屬製成,所述金屬例如為銅(Cu)、鈀(Pd)、鋁(Al)、鎳(Ni)、鈦(Ti)、金(Au)、鉑(Pt)或其合金。
The
電路層120形成於絕緣層110中。若形成有多個絕緣層110,則電路層120形成於每一絕緣層110中。電路層120可形成於絕緣層110的一個或兩個表面上且可嵌入於絕緣層110的一個
或兩個表面中。圖1示出三層的絕緣層110。在此種情形中,電路層120可為四層。
The
形成於積層體100的一個表面上的電路層121可被形成為嵌入於絕緣層110中。另外,形成於積層體100的一個表面上的電路層121可包括端子墊121'。端子墊121'是其中欲安裝電子部件500的區。另一方面,形成於積層體100的另一表面上的電路層122可突出超過積層體100的另一表面。
The
電路層120可包括金屬箔S1及晶種層S2。除金屬箔S1及晶種層S2外,其餘電路層120可通過晶種層作為引入線的電鍍方法來形成。在此種情形中,電路層120可按金屬箔S1、晶種層S2及電鍍層的次序構成。金屬箔S1及晶種層S2可為藉由改良半加成方法(modified semi-additive process,MSAP)形成的電路層120的結果。因此,在本發明中,電路層120的金屬箔S1及晶種層S2不一定需要一直形成。可根據電路層120的製造方法來決定金屬箔S1及晶種層S2是否存在。例如,若電路層120是藉由減成(例如,覆蓋(tenting))或半加成方法(semi-additive process,SAP)技術形成,則電路層120可僅具有晶種層S2而不具有金屬箔S1。
The
積層體100可更包括通孔130,且通孔130電性連接垂直地間隔開的電路層120。亦即,通孔130形成於不同的絕緣層110中或將絕緣層110的兩個表面上所形成的電路層120加以連接。通孔130亦可由金屬製成,所述金屬例如是與電路層120相
同的金屬。通孔130可更包括晶種層S2。
The
積層體100被分成單元區域U及虛設區域D。單元區域U包括多個單元U'且是當基底條在封裝後被切割時充當實際基底的部分。在多個單元U'之間設置有邊界B,且基底條是沿邊界B被切割。虛設區域D是當基底條在封裝後被切割時將被移除的、除單元區域以外的部分。
The
電路層120形成於單元區域U的每一單元U'中且用於安裝電子部件500的端子墊121'亦形成於每一單元U'上。因此,電子部件500安裝於單元區域U的每一單元U'上。
The
如圖2所示,虛設區域D位於單元區域U之外。單元區域U佔據基底條中的大部分,且虛設區域D是沿單元區域U的邊緣被形成為位於基底條的最外部邊緣上。 As shown in FIG. 2, the dummy area D is located outside the unit area U. The unit area U occupies most of the base bar, and the dummy area D is formed along the edge of the unit area U to be located on the outermost edge of the base bar.
第一阻焊層200積層於積層體100上以覆蓋電路層120,且具有感光性樹脂以防止不必要的短路。第一阻焊層200可形成於積層體100的兩個表面上。為方便起見,將積層體100的一個表面上所形成的第一阻焊層200稱作上部阻焊層200a且將積層體100的另一表面上所形成的第一阻焊層200稱作下部阻焊層200b來進行進一步說明。
The first solder resist
上部阻焊層200a與積層體100的一個表面以及所嵌入的電路層121(當形成於積層體100的一個表面上的電路層121嵌入於絕緣層110中時)的被暴露表面接觸。上部阻焊層200a可覆蓋端子墊121'。此處,上部阻焊層200a設置有空腔210以暴露
出積層體100的所述一個表面且端子墊121'是經由空腔210而被暴露出。由於端子墊121'形成於單元區域U中,因此空腔210形成於單元區域U上。可在端子墊121'的經由空腔210而被暴露出的表面上形成表面處理層,例如金(Au)或鎳(Ni)。
The upper solder resist
當形成於積層體100的另一表面上的電路層122突出超過積層體100的另一表面時,下部阻焊層200b被形成為與積層體100的另一表面接觸以覆蓋突出的電路層122。下部阻焊層200b可包括用於暴露出突出的電路層122的下表面的開口區域220。當基底條在封裝後按照單元U'來切割並安裝於主板上時,可在電路層122的經由開口區域220而被暴露出的下表面上形成接合構件,例如焊料。
When the
當形成於積層體100的一個表面上的電路層121嵌入於絕緣層110中且形成於積層體100的另一表面上的電路層122突出超過積層體100的另一表面時,上部阻焊層200a的厚度可小於下部阻焊層200b的厚度。
When the
第一阻焊層200形成於積層體100的單元區域U及虛設區域D上。由於電路層120形成於單元區域U上,因此位於單元區域U上的第一阻焊層200保護電路層120且位於虛設區域D上的第一阻焊層200對基底條賦予剛性。另一方面,第一阻焊層200可不形成於位於單元區域U中的多個單元U'之間的邊界B上。
The first solder resist
加強構件300形成於虛設區域D上的第一阻焊層200上且對基底條賦予剛性。加強構件300形成於虛設區域D上但不形
成於單元區域U上。因此,加強構件300在基底條封裝後進行切割時被移除,且在封裝製程完成之前對基底條提供剛性。由於加強構件300形成於虛設區域D上的第一阻焊層200上,因此加強構件300被形成為高於積層體100之單元區域U的電路層120。
The reinforcing
加強構件300可僅形成於第一阻焊層200的上部阻焊層200a上而不形成於下部阻焊層200b上。然而,並不排除加強構件300形成於上部阻焊層200a及下部阻焊層200b上。
The reinforcing
加強構件300可由金屬形成。例如,加強構件300可由具有較電路層120更大的剛性或模數的金屬製成。剛性意指在受到外力時發生的應變。剛性可被簡單地視為當施予軸向力(垂直應力)時發生的應變。此剛性取決於彈性模數或楊氏模數。可理解,彈性模數或楊氏模數越大,剛性越大。
The
此外,加強構件300可由諸如與電路層120相同之金屬的金屬等形成。加強構件300可藉由與形成電路層120的方法相同的方法形成。加強構件300可包括金屬箔S1及晶種層S2。根據如上所述的形成加強構件300的方法,加強構件300亦可僅包括晶種層S2。加強構件300可利用以下方式而非電路形成方法形成:在加強構件300經圖案化後,將經圖案化的加強構件300黏附至第一阻焊層200。形成加強構件的方法並非僅限於此。
In addition, the reinforcing
參照圖1及圖2,加強構件300可被形成為各種形狀。加強構件300可沿虛設區域D形成且更具體而言,可沿虛設區域D延伸(參見310)。多個加強構件300可被排列成沿虛設區域D
彼此間隔開或彼此接觸(參見320)。加強構件300的寬度等於或小於虛設區域D的寬度,且加強構件300的厚度可大於電路層120的厚度。然而,並非僅限於此。
1 and 2, the
在圖2中,加強構件300被示出為暴露於表面上方。然而,加強構件300被第二阻焊層400覆蓋且因此不被暴露至外部,因此其藉由虛線來指示。
In FIG. 2, the
第一阻焊層200可設置有基準標記(fiducial mark)的圖案330。基準標記的圖案330是由金屬(例如與加強構件300相同的金屬)製成且可在形成加強構件300時一同製作。在此種情形中,加強構件300被定位在第一阻焊層200的上表面上。基準標記的圖案330可被形成為孔形且並非金屬。基準標記的圖案330可為工作孔或製造孔。在此種情形中,基準標記的圖案330穿透第一阻焊層200。此基準標記的圖案330可用於後處理中的基底條的位置辨識。
The first solder resist
第二阻焊層400可積層於第一阻焊層200上以覆蓋加強構件300。第二阻焊層400的厚度等於或大於加強構件300的厚度,且加強構件300被第一阻焊層200及第二阻焊層400所環繞。加強構件300不被暴露至外部。亦即,加強構件300是與第一阻焊層200的上表面接觸,且加強構件300的不與第一阻焊層200接觸的表面是與第二阻焊層400接觸。
The second solder resist
第二阻焊層400可由與第一阻焊層200相同的材料形成。第二阻焊層400亦可由具有較第一阻焊層200更高的剛性或
模數的材料形成。
The second solder resist
第二阻焊層400不形成於單元區域U上而僅形成於虛設區域D上,因而使得第二阻焊層400的覆蓋第一阻焊層200的面積可相同於或小於虛設區域D的面積。另外,第二阻焊層400是在基底條封裝後進行切割時被移除,且在封裝製程完成之前對基底條提供剛性。
The second solder resist
第二阻焊層400設置有側向開口的模製澆口(mold gate)420。模製澆口420是在基底條封裝製程中引入模製構件430的入口。第二阻焊層400形成於除了欲成為模製澆口420區域以外的區域中。
The second solder resist
模製澆口420的位置及數目不受限定。在圖2中,多個模製澆口420是例示性地示出位於基底條的一個側表面上。然而,本發明並非僅限於此位置及數目。
The position and number of the molded
第二阻焊層400設置有朝上開口的開口410且由此基準標記的圖案330經由開口410而暴露。當基準標記的圖案330被形成為孔形時,開口410可被形成為與孔對應。然而,當基準標記的圖案330不需要暴露時,例如當基準標記的圖案330可藉由X射線等而經由第二阻焊層400來辨識時,第二阻焊層400可覆蓋基準標記的圖案330,且上述開口410可為不必要的。
The second solder resist
圖3是示出根據本發明實施例的電子部件500的封裝的剖視圖。圖4示出根據本發明實施例的電子部件500的封裝的模製製程。
FIG. 3 is a cross-sectional view showing a package of an
參照圖3,根據本發明實施例的電子部件500的封裝包括:基底條,被分成單元區域U及虛設區域D;以及電子部件500,安裝於單元區域U上。如參照圖1及圖2所述,基底條包括積層體100、第一阻焊層200、加強構件300以及第二阻焊層400。
3, the package of the
對於基底條而言,積層體100、第一阻焊層200、加強構件300以及第二阻焊層400與以上所闡述的該些相同,因此將省略其說明。
Regarding the base strip, the
電子部件500安裝於基底條上且具體而言是安裝於第一阻焊層200的空腔210中。更具體而言,電子部件500是藉由接合構件510而安裝於經由空腔210而被暴露出的位於積層體100的一個表面上的端子墊121'上。接合構件510可為焊料。電子部件500是藉由接合構件510而與積層體100的一個表面間隔開,且可在電子部件500與積層體100的所述一個表面之間夾置底部填充膠520。然而,除使用接合構件510的倒裝晶片法外,電子部件500亦可藉由打線接合法而安裝於基底條上。
The
安裝於基底條上的電子部件500包括各種元件,例如主動元件、被動元件以及積體電路(integrated circuit,IC),且可為例如半導體晶片。可在單元區域U的每一單元U'上安裝一個電子部件500,或可在每一單元U'上安裝多個電子部件500。
The
根據本發明實施例的電子部件500的封裝可更包括形成於第一阻焊層200上的模製構件430以覆蓋所安裝的電子部件500。模製構件430可被引入至空腔210中以覆蓋電子部件500。
The package of the
參照圖4,模製構件430可經由模製澆口420流動至基底條上。模製構件430可藉由採用第二阻焊層400作為擋壩(dam)而形成於第一阻焊層200及電子部件500上。結果,如圖3所示,模製構件430可形成為較第二阻焊層400的高度低的高度。然而,並非僅限於此。
Referring to FIG. 4, the
根據本發明實施例的電子部件500的封裝可在形成模製構件430後按照單元U'來切割。
The package of the
圖5至圖12是示出根據本發明實施例的在製造基底條的方法中所用的製程的剖視圖。 5 to 12 are cross-sectional views showing the manufacturing process used in the method of manufacturing the base strip according to the embodiment of the present invention.
參照圖5,形成積層體100。積層體100可形成有依序堆疊的多個絕緣層110。可利用載體而以無芯形式形成積層體100。在此種情形中,可將形成於積層體100的一個表面上的電路層121嵌入於絕緣層110中。當形成積層體100時,可藉由各種方法形成電路層120,例如改良半加成方法(MSAP)、半加成方法(SAP)以及覆蓋(tenting)。
Referring to FIG. 5, a
參照圖6,在積層體100上形成第一阻焊層200。將金屬箔S1貼合於第一阻焊層200的一個表面上且使第一阻焊層200的另一表面與積層體100接觸,以使得金屬箔S1位於外側上。
Referring to FIG. 6, a first solder resist
參照圖7,在第一阻焊層200上形成圖案遮罩M以對第一阻焊層200進行圖案化。此處,圖案遮罩M可為乾膜。當金屬箔S1貼合至第一阻焊層200的一個表面時,圖案遮罩M被定位在金屬箔S1上。
Referring to FIG. 7, a pattern mask M is formed on the first solder resist
參照圖8,對第一阻焊層200進行圖案化以在上部阻焊層200a中形成空腔210並在下部阻焊層200b中形成開口區域220。在對第一阻焊層200進行圖案化後,將圖案遮罩M剝離。
Referring to FIG. 8, the first solder resist
經由曝光及顯影製程,使得第一阻焊層200可包括空腔210及開口區域220。例如,當第一阻焊層200為負型時,圖案遮罩M覆蓋空腔210及開口區域220,然後對第一阻焊層200進行曝光,並經由顯影製程將未曝光部分移除。另一方面,當第一阻焊層200為正型時,圖案遮罩M開放空腔210及開口區域220,然後對第一阻焊層200進行曝光,且經由顯影製程將被曝光部分移除。在其中金屬箔S1貼合至第一阻焊層200的一個表面的情形中,可在移除與空腔210及開口區域220對應的金屬箔S1後執行曝光及顯影製程。
Through the exposure and development process, the first solder resist
與此同時,可藉由雷射處理、噴砂處理(blast processing)等形成第一阻焊層200的空腔210及開口區域220。
At the same time, the
參照圖9及圖10,在第一阻焊層200上形成晶種層S2,且在晶種層S2上積層阻鍍層(plating resist)R。使阻鍍層R對欲形成加強構件300的區開口,且經由電鍍而形成加強構件300。可藉由無電鍍覆(electroless plating)來形成晶種層S2。晶種層S2可形成在第一阻焊層200的空腔210的底表面及內壁上。當金屬箔S1貼合至第一阻焊層200時,晶種層S2形成在金屬箔S1上。
9 and 10, a seed layer S2 is formed on the first solder resist
參照圖11,剝離阻鍍層R,且亦將除加強構件300的區之外的晶種層S2移除。當金屬箔S1貼合至第一阻焊層200時,
除加強構件300的區之外的金屬箔S1及晶種層S2被移除。
11, the plating resist layer R is peeled off, and the seed layer S2 except for the region of the reinforcing
參照圖12,形成第二阻焊層400。第二阻焊層400形成在第一阻焊層200上以環繞加強構件300。第二阻焊層400是藉由以下方式形成:在基底條(單元區域U及虛設區域D兩者)的整個表面上施用阻焊劑,將位於單元區域U上的阻焊劑移除,且保留位於虛設區域D上的阻焊劑。可藉由機械處理(例如曝光/顯影或噴砂)來達成阻焊劑的移除。在此種情形中,當第一阻焊層200及第二阻焊層400均為感光性時,第一阻焊層200與第二阻焊層400可由不同的材料形成,或者可具有與不同的光(例如,不同波長)進行反應的特性,使得當藉由曝光/顯影來形成第二阻焊層400時第一阻焊層200不會受影響。
Referring to FIG. 12, a second solder resist
儘管本揭露包括具體實例,然而對於此項技術中具有通常知識者而言將顯而易見的是,在不背離申請專利範圍及其等效範圍的精神及範圍的條件下,可對該些實例作出各種形式及細節上的變化。本文所述的實例應被視為僅具有說明性意義而非用於限制。每一實例中的特徵或態樣的說明應被視為可適用於其他實例中的相似的特徵或態樣。若所述的技術以不同次序來執行及/或若所述系統、架構、裝置或電路中的部件以不同的方式進行組合及/或藉由其他部件或其等效形式來替換或補充,則可達成合適的結果。因此,本揭露的範圍並非由詳細說明來界定,而是由申請專利範圍及其等效範圍來界定,且處於申請專利範圍及其等效範圍的範圍內的所有變型應被視為包括在本揭露中。 Although the present disclosure includes specific examples, it will be obvious to those with ordinary knowledge in the art that, without departing from the spirit and scope of the scope of the patent application and its equivalent scope, various examples can be made. Changes in form and details. The examples described herein should be considered as illustrative only and not restrictive. The description of the features or aspects in each example should be regarded as applicable to similar features or aspects in other examples. If the described technologies are executed in a different order and/or if the components in the system, architecture, device or circuit are combined in different ways and/or replaced or supplemented by other components or their equivalent forms, then A suitable result can be achieved. Therefore, the scope of this disclosure is not defined by the detailed description, but by the scope of the patent application and its equivalent scope, and all variants within the scope of the patent application and its equivalent scope shall be deemed to be included in this disclosure. Revealing.
100‧‧‧積層體 100‧‧‧Layered body
110‧‧‧絕緣層 110‧‧‧Insulation layer
120、121、122‧‧‧電路層 120、121、122‧‧‧Circuit layer
121'‧‧‧端子墊 121'‧‧‧Terminal pad
130‧‧‧通孔 130‧‧‧Through hole
200‧‧‧第一阻焊層 200‧‧‧First solder mask
200a‧‧‧上部阻焊層 200a‧‧‧Upper solder mask
200b‧‧‧下部阻焊層 200b‧‧‧Lower solder mask
210‧‧‧空腔 210‧‧‧cavity
220‧‧‧開口區域 220‧‧‧Opening area
300‧‧‧加強構件 300‧‧‧Strengthening member
400‧‧‧第二阻焊層 400‧‧‧Second solder mask
B‧‧‧邊界 B‧‧‧Border
D‧‧‧虛設區域 D‧‧‧Dummy area
S1‧‧‧金屬箔 S1‧‧‧Metal foil
S2‧‧‧晶種層 S2‧‧‧Seed layer
U‧‧‧單元區域 U‧‧‧unit area
U'‧‧‧單元 Unit U'‧‧‧
Claims (21)
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