TWI739379B - Semiconductor device, semiconductor device manufacturing method, and wire bonding device - Google Patents

Semiconductor device, semiconductor device manufacturing method, and wire bonding device Download PDF

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TWI739379B
TWI739379B TW109111883A TW109111883A TWI739379B TW I739379 B TWI739379 B TW I739379B TW 109111883 A TW109111883 A TW 109111883A TW 109111883 A TW109111883 A TW 109111883A TW I739379 B TWI739379 B TW I739379B
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electrode
wire
bonding
target point
control signal
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TW109111883A
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TW202107656A (en
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関根直希
朴善基
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日商新川股份有限公司
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Abstract

本發明提高接合導線的拉力強度。半導體裝置10包括：電路基板11，包含電極墊13；半導體晶片12，包含對電極墊13電性連接的電極墊14；以及導線20，一端連接於電極墊13，另一端連接於電極墊14。導線20具有：第一導線部24，沿著電極墊13延伸，一部分被按壓而與電極墊13電性接合；第二導線部26，以不接觸第一導線部24的方式，沿與電極墊13交叉的方向延伸；第三導線部27，向電極墊14延伸；第一彎曲部28，將第一導線部24連接於第二導線部26；以及第二彎曲部29，將第二導線部26連接於第三導線部27。 The invention improves the tensile strength of the bonding wire. The semiconductor device 10 includes: a circuit substrate 11 including an electrode pad 13; a semiconductor chip 12 including an electrode pad 14 electrically connected to the electrode pad 13; The wire 20 has a first wire portion 24 extending along the electrode pad 13 and a part of it is pressed to be electrically connected to the electrode pad 13; 13 extends in a crossing direction; the third wire portion 27 extends to the electrode pad 14; the first bending portion 28 connects the first wire portion 24 to the second wire portion 26; and the second bending portion 29 connects the second wire portion 26 is connected to the third lead part 27.

Description

半導體裝置、半導體裝置的製造方法、以及打 線接合裝置 Semiconductor device, method of manufacturing semiconductor device, and semiconductor device Wire bonding device

本發明是有關於一種半導體裝置、半導體裝置的製造方法以及打線接合裝置。 The invention relates to a semiconductor device, a method of manufacturing a semiconductor device, and a wire bonding device.

設於電路基板的電極、與設於電路基板的半導體晶片的電極藉由金屬製的極細導線而電性連接。此種連接技術被稱為所謂的打線接合。作為打線接合的一種的楔形接合(wedge bonding)於將導線按壓於電極的狀態下賦予熱或超音波等能量，藉此將導線與電極物理及電性連接。例如，專利文獻1、專利文獻2揭示與楔形接合有關的技術。 The electrodes provided on the circuit board and the electrodes of the semiconductor chip provided on the circuit board are electrically connected by metal ultra-fine wires. This type of connection technique is called so-called wire bonding. Wedge bonding, which is a kind of wire bonding, applies energy such as heat or ultrasonic waves while pressing the wire against the electrode, thereby physically and electrically connecting the wire and the electrode. For example, Patent Document 1 and Patent Document 2 disclose techniques related to wedge bonding.

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2007-273991號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2007-273991

[專利文獻2]日本專利特開2016-062962號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2016-062962

對於導線，要求維持連接於兩端的電極間的電性連接。例如，於導線被切斷的情形及導線自電極剝離的情形時，無法維 持電性連接。因此，對於經接合的導線，要求被稱為拉力強度的機械強度。所謂拉力強度，為於將兩端連接於電極的導線拉伸的狀態下，產生導線的切斷或導線與電極的剝離的荷重。 For wires, it is required to maintain the electrical connection between the electrodes connected to both ends. For example, when the wire is cut and the wire is peeled from the electrode, it cannot be maintained. Support electrical connection. Therefore, for the bonded wires, mechanical strength called tensile strength is required. The so-called tensile strength is a load that causes cutting of the lead or peeling of the lead from the electrode in a state where the lead connected to the electrode at both ends is stretched.

該技術領域中，期望提高拉力強度。因此，本發明的目的在於提供一種拉力強度經提高的半導體裝置、該半導體裝置的製造方法、以及製造該半導體裝置的打線接合裝置。 In this technical field, it is desired to improve the tensile strength. Therefore, an object of the present invention is to provide a semiconductor device with improved tensile strength, a method of manufacturing the semiconductor device, and a wire bonding device for manufacturing the semiconductor device.

本揭示的一形態的半導體裝置包括：第一電極；第二電極，與第一電極電性連接；以及接合導線，一端接合於第一電極，另一端接合於第二電極，接合導線具有：第一導線部，沿著第一電極的表面延伸，一部分被按壓而與第一電極電性接合；第二導線部，以不接觸第一導線部的方式，沿自第一電極的表面立起的方向延伸；第三導線部，向第二電極延伸，端部被按壓而與第二電極電性接合；第一彎曲部，將第一導線部延伸的方向彎曲成第二導線部延伸的方向；以及第二彎曲部，將第二導線部延伸的方向彎曲成第三導線部延伸的方向。 A semiconductor device of one form of the present disclosure includes: a first electrode; a second electrode electrically connected to the first electrode; and a bonding wire, one end of which is bonded to the first electrode, and the other end to the second electrode, the bonding wire has: A lead part extends along the surface of the first electrode, and a part of it is pressed to be electrically connected to the first electrode; the second lead part, in a way that does not touch the first lead part, extends along the surface of the first electrode Direction extension; the third wire portion extends to the second electrode, and the end portion is pressed to be electrically connected to the second electrode; the first bending portion bends the direction in which the first wire portion extends into the direction in which the second wire portion extends; And the second bending part, which bends the direction in which the second wire part extends to the direction in which the third wire part extends.

接合導線在接合於第一電極的部位與接合於第二電極的部位之間，設有第一導線部的一部分、第二導線部、第一彎曲部以及第二彎曲部。即，在接合於第一電極的部位與接合於第二電極的部位之間，抽出有充分長度的接合導線。而且，接合導線包含第一彎曲部以及第二彎曲部。進而，接合導線具有沿著第一電極延伸的第一導線部。根據該些構成，於拉應力作用於接合導 線時，負荷並未直接作用於接合於第一電極的部位。負荷由第一導線部的一部分、第二導線部、第三導線部、第一彎曲部以及第二彎曲部負擔。該些部位並未如接合於第一電極的部位般受到剖面形狀變化般的加工，故而至少維持接合導線原本具有的強度。因此，接合導線可提高拉力強度。 The bonding wire is provided with a part of the first lead part, the second lead part, the first bending part, and the second bending part between the part joined to the first electrode and the part joined to the second electrode. That is, a bonding wire having a sufficient length is drawn between the part to be bonded to the first electrode and the part to be bonded to the second electrode. Furthermore, the bonding wire includes a first bending portion and a second bending portion. Furthermore, the bonding wire has a first wire portion extending along the first electrode. According to these configurations, tensile stress acts on the bonding guide During the threading, the load does not directly act on the part joined to the first electrode. The load is borne by a part of the first lead part, the second lead part, the third lead part, the first bending part, and the second bending part. These parts are not processed as the cross-sectional shape changes like the parts bonded to the first electrode, so at least the original strength of the bonding wire is maintained. Therefore, the bonding wire can increase the tensile strength.

所述半導體裝置中，亦可為第一導線部含有接合部以及延伸部，所述接合部與第一電極電性接合，所述延伸部與接合部及第二導線部連續，延伸部的長度較接合部的長度更長。根據所述構成，可較佳地提高接合導線的拉力強度。 In the semiconductor device, the first wire portion may also include a bonding portion and an extension portion, the bonding portion is electrically bonded to the first electrode, and the extension portion is continuous with the bonding portion and the second wire portion, and the length of the extension portion It is longer than the length of the joint. According to the above configuration, the tensile strength of the bonding wire can be preferably improved.

所述半導體裝置的第一彎曲部中，第一導線部延伸的第一方向與第二導線部延伸的第二方向所成的角度亦可為90度以下。根據所述構成，可較佳地提高接合導線的拉力強度。 In the first bending portion of the semiconductor device, the angle formed by the first direction in which the first wire portion extends and the second direction in which the second wire portion extends may be 90 degrees or less. According to the above configuration, the tensile strength of the bonding wire can be preferably improved.

所述半導體裝置的第二彎曲部中，第二導線部延伸的第二方向與第三導線部延伸的第三方向所成的角度亦可為90度以上。根據所述構成，可較佳地提高接合導線的拉力強度。 In the second bending portion of the semiconductor device, the angle formed by the second direction in which the second wire portion extends and the third direction in which the third wire portion extends may also be 90 degrees or more. According to the above configuration, the tensile strength of the bonding wire can be preferably improved.

所述半導體裝置的第一彎曲部亦可為接合導線塑性變形而成的部分。根據所述構成，可較佳地提高接合導線的拉力強度。 The first bending part of the semiconductor device may also be a part formed by plastic deformation of a bonding wire. According to the above configuration, the tensile strength of the bonding wire can be preferably improved.

所述半導體裝置的第二彎曲部亦可為接合導線塑性變形而成的部分。根據所述構成，可較佳地提高接合導線的拉力強度。 The second bending part of the semiconductor device may also be a part formed by plastic deformation of a bonding wire. According to the above configuration, the tensile strength of the bonding wire can be preferably improved.

本揭示的另一形態為一種半導體裝置的製造方法，為包 括第一電極、與第一電極電性連接的第二電極、以及一端接合於第一電極且另一端接合於第二電極的半導體裝置的製造方法，包括：第一步驟，使用焊針將接合導線的一端接合於第一電極後，一邊抽出接合導線，一邊使焊針的前端移動至較接合導線的接合部更靠第二電極側且較接合部更靠上方的位置；第二步驟，使焊針的前端向第一電極下降並將接合導線的一部分按壓於第一電極，藉此形成第一彎曲部；第三步驟，一邊抽出接合導線，一邊使焊針的前端移動至較第一彎曲部更靠接合部側且較接合部更靠上方的位置；以及第四步驟，使焊針的前端向第一電極下降，藉此形成第二彎曲部。 Another aspect of the present disclosure is a method of manufacturing a semiconductor device, which is a package The method for manufacturing a semiconductor device including a first electrode, a second electrode electrically connected to the first electrode, and a semiconductor device with one end joined to the first electrode and the other end joined to the second electrode includes: a first step, using solder pins to join After one end of the wire is joined to the first electrode, while pulling out the bonding wire, move the tip of the soldering pin to a position that is closer to the second electrode than the junction of the wire and above the junction; the second step is to make The tip of the soldering pin is lowered to the first electrode and a part of the bonding wire is pressed against the first electrode, thereby forming the first bend; in the third step, the tip of the soldering pin is moved to a more first bend while pulling out the bonding wire The part is closer to the joining part and above the joining part; and in the fourth step, the tip of the soldering pin is lowered toward the first electrode, thereby forming a second bent part.

根據所述製造方法，可形成包含第一彎曲部以及第二彎曲部的接合導線的端部。因此，可提高半導體裝置的接合導線的拉力強度。 According to the manufacturing method, the end portion of the bonding wire including the first bent portion and the second bent portion can be formed. Therefore, the tensile strength of the bonding wire of the semiconductor device can be improved.

於本揭示的另一形態中，第一步驟亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的步驟；以及一邊沿著與第一電極的表面的法線方向交叉的方向朝第二電極側抽出接合導線，一邊使焊針移動的步驟。根據所述步驟，能夠可靠地形成第一導線部。 In another aspect of the present disclosure, the first step may also include: pulling out the bonding wire along the normal direction of the surface of the first electrode while raising the solder pins; and moving along the surface of the first electrode. The step of pulling out the bonding wire toward the second electrode side in a direction crossing the normal direction of, while moving the solder pin. According to the above steps, the first wire portion can be reliably formed.

於本揭示的另一形態中，第三步驟亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的步驟；以及一邊沿著與第一電極的表面的法線方向交叉的方向朝接合部側抽出接合導線，一邊使焊針移動的步驟。根據所述步驟， 能夠可靠地形成第二導線部。 In another aspect of the present disclosure, the third step may also include: pulling out the bonding wire along the normal direction of the surface of the first electrode while raising the solder pins; and moving along the surface of the first electrode. The step of pulling out the bonding wire toward the junction side in a direction crossing the normal direction of the, while moving the solder pin. According to the steps, The second lead part can be formed reliably.

本揭示的另一形態亦可於第四步驟後，更具有：第五步驟，使用焊針將接合導線的另一端接合於第二電極，第五步驟亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的步驟；使焊針的前端移動至第二電極上的位置的步驟；以及將接合導線的另一端接合於第二電極的步驟。根據所述步驟，可形成將第一電極與第二電極連接的接合導線。 Another aspect of the present disclosure may also have after the fourth step: a fifth step, using a solder pin to join the other end of the bonding wire to the second electrode, and the fifth step may also include: one side along the first electrode The step of pulling out the bonding wire in the normal direction of the surface while raising the solder pin; the step of moving the tip of the solder pin to the position on the second electrode; and the step of bonding the other end of the bonding wire to the second electrode. According to the steps, a bonding wire connecting the first electrode and the second electrode can be formed.

本揭示的進而另一形態亦可為一種打線接合裝置，製造包括第一電極、與第一電極電性連接的第二電極、及一端接合於第一電極且另一端接合於第二電極的接合導線的半導體裝置，所述打線接合裝置包括：接合單元，包含可移動地構成的焊針；以及控制單元，控制接合單元的動作，控制單元將下述控制訊號提供給接合單元：第一控制訊號，使用焊針將接合導線的一端接合於第一電極後，一邊抽出接合導線，一邊使焊針的前端移動至較接合導線的接合部更靠第二電極側且較接合部更靠上方的位置；第二控制訊號，使焊針的前端向第一電極下降，將接合導線的一部分按壓於第一電極，藉此形成第一彎曲部；第三控制訊號，一邊抽出接合導線，一邊使焊針的前端移動至較第一彎曲部更靠接合部側且較接合部更靠上方的位置；以及第四控制訊號，使焊針的前端向第一電極下降，藉此形成第二彎曲部。 Yet another aspect of the present disclosure may also be a wire bonding device, which includes a first electrode, a second electrode electrically connected to the first electrode, and a bond having one end connected to the first electrode and the other end connected to the second electrode A wire-bonding semiconductor device, the wire bonding device includes: a bonding unit including a movably configured solder pin; and a control unit that controls the operation of the bonding unit, and the control unit provides the following control signal to the bonding unit: a first control signal , After using a soldering needle to join one end of the bonding wire to the first electrode, while pulling out the bonding wire, move the tip of the soldering needle to a position closer to the second electrode than the bonding part of the bonding wire and above the bonding part ; The second control signal, which makes the tip of the soldering needle descend toward the first electrode, presses a part of the bonding wire to the first electrode, thereby forming the first bend; The front end of the soldering pin moves to a position closer to the joining part than the first bending part and higher than the joining part; and the fourth control signal causes the front end of the welding needle to descend toward the first electrode, thereby forming a second bending part.

根據所述打線接合裝置，可形成包含第一彎曲部以及第二彎曲部的接合導線的端部。因此，可提高半導體裝置的接合導 線的拉力強度。 According to the wire bonding device, the end portion of the bonding wire including the first bending portion and the second bending portion can be formed. Therefore, the bonding conductance of the semiconductor device can be improved. The tensile strength of the wire.

於進而另一形態中，第一控制訊號亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的控制訊號；以及一邊沿著與第一電極的表面的法線方向交叉的方向朝第二電極側抽出接合導線，一邊使焊針移動的控制訊號。根據所述構成，能夠可靠地形成第一導線部。 In yet another aspect, the first control signal may also include: a control signal for raising the solder pin while pulling out the bonding wire along the normal direction of the surface of the first electrode; A control signal for drawing the bonding wire toward the second electrode side in a direction crossing the normal direction of the, while moving the soldering needle. According to the above configuration, the first lead portion can be reliably formed.

於進而另一形態中，第三控制訊號亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的控制訊號；以及一邊沿著與第一電極的表面的法線方向交叉的方向朝接合部側抽出接合導線，一邊使焊針移動的控制訊號。根據所述構成，能夠可靠地形成第二導線部。 In yet another form, the third control signal may also include: a control signal for raising the solder pin while pulling out the bonding wire along the normal direction of the surface of the first electrode; A control signal for pulling out the bonding wire toward the joint side in a direction crossing the normal direction of the wire while moving the soldering needle. According to the above configuration, the second lead portion can be reliably formed.

於進而另一形態中，控制單元亦可進而將第五控制訊號提供給接合單元，所述第五控制訊號使用焊針將接合導線的另一端接合於第二電極，第五控制訊號亦可包含：一邊沿著第一電極的表面的法線方向抽出接合導線，一邊使焊針上升的控制訊號；使焊針的前端移動至第二電極上的位置的控制訊號；以及使接合導線的另一端接合於第二電極的控制訊號。根據所述構成，可形成將第一電極與第二電極連接的接合導線。 In yet another form, the control unit may further provide a fifth control signal to the bonding unit. The fifth control signal uses a solder pin to bond the other end of the bonding wire to the second electrode, and the fifth control signal may also include : A control signal for raising the soldering pin while pulling out the bonding wire along the normal direction of the surface of the first electrode; a control signal for moving the tip of the soldering pin to the position on the second electrode; and the other end of the bonding wire The control signal connected to the second electrode. According to this configuration, a bonding wire connecting the first electrode and the second electrode can be formed.

根據本發明，提供一種拉力強度經提高的半導體裝置、該半導體裝置的製造方法、以及製造該半導體裝置的打線接合裝置。 According to the present invention, a semiconductor device with improved tensile strength, a method of manufacturing the semiconductor device, and a wire bonding device for manufacturing the semiconductor device are provided.

1:打線接合裝置 1: Wire bonding device

2:搬送單元 2: Conveying unit

3:接合單元 3: Joint unit

4:控制單元 4: control unit

6:移動機構 6: Mobile agency

7:接合工具 7: Joining tool

8:焊針 8: Soldering pin

10、110:半導體裝置 10.110: Semiconductor device

11:電路基板(第一電子零件) 11: Circuit board (first electronic part)

11a、12a、13a:主面 11a, 12a, 13a: main surface

12:半導體晶片(第二電子零件) 12: Semiconductor wafer (second electronic part)

13:電極墊(第一電極) 13: Electrode pad (first electrode)

14:電極墊(第二電極) 14: Electrode pad (second electrode)

20:導線(接合導線) 20: Wire (bonding wire)

21:端部(一端) 21: end (one end)

22:端部(另一端) 22: End (the other end)

24:第一導線部 24: The first wire part

24a:接合部 24a: Joint

24b:延伸部 24b: Extension

26:第二導線部 26: The second wire part

27:第三導線部 27: Third wire part

28:第一彎曲部 28: The first bend

29:第二彎曲部 29: second bend

120:導線 120: Wire

113:電極墊 113: Electrode pad

123:接合部 123: Joint

124:導線部 124: Wire part

125:頸部 125: neck

A1、A2:角度 A1, A2: Angle

D1、D2、D3:方向 D1, D2, D3: direction

P1:第一目標點 P1: The first target point

P2:第二目標點 P2: The second target point

P3:第三目標點 P3: Third target point

P4:第四目標點 P4: Fourth target point

P5:第五目標點 P5: Fifth target point

P6:第六目標點 P6: The sixth target point

P7:第七目標點 P7: Seventh target point

P8:第八目標點 P8: Eighth goal point

P9:第九目標點 P9: Ninth target point

S10~S13、S20、S30~S32、S40、S50~S53:步驟 S10~S13, S20, S30~S32, S40, S50~S53: steps

圖1為表示打線接合裝置的構成的圖。 Fig. 1 is a diagram showing the structure of a wire bonding device.

圖2為將半導體裝置的一部分放大表示的圖。 FIG. 2 is an enlarged view showing a part of the semiconductor device.

圖3為將圖2所示的導線的端部放大表示的圖。 Fig. 3 is an enlarged view showing the end of the wire shown in Fig. 2.

圖4為表示導線的形狀及焊針的目標點的圖。 Fig. 4 is a diagram showing the shape of the wire and the target point of the solder pin.

圖5為表示半導體裝置的製造方法的主要步驟的流程圖。 FIG. 5 is a flowchart showing main steps of a method of manufacturing a semiconductor device.

圖6的(a)部分、(b)部分及(c)部分為表示半導體裝置的製造方法的主要步驟的圖。 Parts (a), (b), and (c) of FIG. 6 are diagrams showing main steps of a method of manufacturing a semiconductor device.

圖7的(a)部分、(b)部分及(c)部分為表示半導體裝置的製造方法的繼圖6的(a)部分、(b)部分及(c)部分之後的主要步驟的圖。 Parts (a), (b), and (c) of FIG. 7 are diagrams showing main steps of the method of manufacturing a semiconductor device following parts (a), (b), and (c) of FIG. 6.

圖8的(a)部分及(b)部分為表示半導體裝置的製造方法的繼圖7的(a)部分、(b)部分及(c)部分之後的主要步驟的圖。 Parts (a) and (b) of FIG. 8 are diagrams showing main steps of the method of manufacturing a semiconductor device following parts (a), (b), and (c) of FIG. 7.

圖9為表示半導體裝置的製造方法的繼圖8之後的主要步驟的圖。 FIG. 9 is a diagram showing main steps subsequent to FIG. 8 in the method of manufacturing a semiconductor device.

圖10為將實施例的導線的端部放大拍攝的照片。 Fig. 10 is an enlarged photograph of the end of the wire of the embodiment.

圖11為將比較例的導線的端部放大表示的圖。 Fig. 11 is an enlarged view showing the end of the conductive wire of the comparative example.

以下，一方面參照附圖一方面對本發明的實施形態加以詳細說明。於圖式的說明中對相同要素標註相同符號，省略重複 的說明。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings on the one hand. In the description of the drawings, the same elements are marked with the same symbols, and repetitions are omitted instruction of.

[打線接合裝置] [Wire bonding device]

圖1所示的打線接合裝置1例如使用細徑的金屬導線將印刷基板等的電極、與設於該印刷基板的半導體元件的電極電性連接。打線接合裝置1對導線提供熱、超音波或壓力而將導線連接於電極。打線接合裝置1具有搬送單元2、接合單元3以及控制單元4。 The wire bonding apparatus 1 shown in FIG. 1 uses, for example, a thin metal wire to electrically connect electrodes of a printed circuit board or the like and electrodes of a semiconductor element provided on the printed circuit board. The wire bonding device 1 applies heat, ultrasonic waves or pressure to the wire to connect the wire to the electrode. The wire bonding device 1 includes a conveying unit 2, a bonding unit 3, and a control unit 4.

搬送單元2將作為被處理零件的半導體裝置10搬送至接合區域。接合單元3包含移動機構6、接合工具7以及焊針8。移動機構6使焊針8移動。於接合工具7的前端，可裝卸地設有焊針8。焊針8對導線提供熱、超音波或壓力。控制單元4控制包含接合單元3的動作的、打線接合裝置1整體的動作。控制單元4將若干控制訊號提供給接合單元3。例如，控制訊號包含：用以控制焊針8相對於半導體裝置10的位置的訊號；以及用以開始及停止提供熱、超音波或壓力的訊號。關於控制單元4，將於後述。 The transport unit 2 transports the semiconductor device 10 as a part to be processed to the bonding area. The joining unit 3 includes a moving mechanism 6, a joining tool 7 and a welding needle 8. The moving mechanism 6 moves the soldering pin 8. At the front end of the joining tool 7, a welding pin 8 is detachably provided. The solder pin 8 provides heat, ultrasound or pressure to the wire. The control unit 4 controls the entire operation of the wire bonding device 1 including the operation of the bonding unit 3. The control unit 4 provides several control signals to the joining unit 3. For example, the control signal includes: a signal used to control the position of the solder pin 8 relative to the semiconductor device 10; and a signal used to start and stop the supply of heat, ultrasound or pressure. The control unit 4 will be described later.

[半導體裝置] [Semiconductor device]

圖2將圖1所示的半導體裝置10的一部分放大表示。半導體裝置10例如具有電路基板11(第一電子零件)、半導體晶片12(第二電子零件)以及導線20(接合導線)。半導體晶片12藉由固晶等而固定於電路基板11的主面11a。電路基板11具有一個或多個電極墊13(第一電極)。電極墊13設於電路基板11的主面11a。另外，半導體晶片12亦具有一個或多個電極墊14(第二電極)。 電極墊14設於半導體晶片12的主面12a。 FIG. 2 shows an enlarged part of the semiconductor device 10 shown in FIG. 1. The semiconductor device 10 has, for example, a circuit board 11 (first electronic component), a semiconductor wafer 12 (second electronic component), and a wire 20 (bonding wire). The semiconductor wafer 12 is fixed to the main surface 11a of the circuit board 11 by die bonding or the like. The circuit substrate 11 has one or more electrode pads 13 (first electrodes). The electrode pad 13 is provided on the main surface 11 a of the circuit board 11. In addition, the semiconductor wafer 12 also has one or more electrode pads 14 (second electrodes). The electrode pad 14 is provided on the main surface 12 a of the semiconductor wafer 12.

導線20將電極墊13電性連接於電極墊14。例如，導線20由金(Au)、銀(Ag)、鋁(Al)、銅(Cu)及該些金屬的合金形成。另外，作為一例，導線20的直徑為20微米。導線20的其中一個端部21(一端)物理及電性連接於電路基板11的電極墊13。導線20的另一個端部22(另一端)物理及電性連接於半導體晶片12的電極墊14。 The wire 20 electrically connects the electrode pad 13 to the electrode pad 14. For example, the wire 20 is formed of gold (Au), silver (Ag), aluminum (Al), copper (Cu), and alloys of these metals. In addition, as an example, the diameter of the wire 20 is 20 micrometers. One end 21 (one end) of the wire 20 is physically and electrically connected to the electrode pad 13 of the circuit board 11. The other end 22 (the other end) of the wire 20 is physically and electrically connected to the electrode pad 14 of the semiconductor chip 12.

圖3將導線20的端部21放大而示意性地表示。作為一體物的導線20包含基於其形狀及機械性質的若干部分。 FIG. 3 schematically shows the end 21 of the wire 20 enlarged. The wire 20 as a body includes several parts based on its shape and mechanical properties.

導線20包含第一導線部24、第二導線部26、第三導線部27、第一彎曲部28以及第二彎曲部29。 The wire 20 includes a first wire portion 24, a second wire portion 26, a third wire portion 27, a first bending portion 28, and a second bending portion 29.

第一導線部24沿著電極墊13的表面延伸，其一部分被按壓而與電極墊13電性接合。第一導線部24包含與電極墊13電性接合的接合部24a、以及與接合部24a及第二導線部26連續的延伸部24b。 The first lead portion 24 extends along the surface of the electrode pad 13, and a part of it is pressed to be electrically connected to the electrode pad 13. The first wire portion 24 includes a bonding portion 24 a electrically connected to the electrode pad 13, and an extension portion 24 b continuous with the bonding portion 24 a and the second wire portion 26.

接合部24a對電極墊13物理及電性連接。此處所謂物理連接，是指導線20與電極墊13經接合。例如，接合部24a亦可設為產生針對拉伸力的阻力(反作用力)的部分。另外，所謂電性連接，是指導線20與電極墊13之間的電阻極小的狀態。 The bonding portion 24a is physically and electrically connected to the electrode pad 13. The so-called physical connection here means that the guide wire 20 and the electrode pad 13 are joined. For example, the junction part 24a may be set as a part which produces resistance (reaction force) with respect to a tensile force. In addition, the so-called electrical connection refers to a state where the resistance between the guide wire 20 and the electrode pad 13 is extremely small.

接合部24a由所謂的楔形接合形成。楔形接合於焊針8對電極墊13按壓導線20的狀態下，自焊針8提供能量(熱、超音波等)。其結果為，經按壓的部分被壓扁而變形為扁平狀，藉此 對電極墊13壓接導線20。即，接合部24a亦可設為具有較導線20的直徑更小的厚度的部分。 The joining portion 24a is formed by so-called wedge joining. In a state where the welding needle 8 presses the lead wire 20 against the electrode pad 13 by wedge bonding, energy (heat, ultrasonic waves, etc.) is supplied from the welding needle 8. As a result, the pressed part is squashed and deformed into a flat shape, thereby The wire 20 is crimped to the electrode pad 13. That is, the bonding portion 24a may be a portion having a thickness smaller than the diameter of the wire 20.

延伸部24b為自接合部24a連續地延伸的第一導線部24的一部分。延伸部24b保持導線20的剖面形狀，剖面形狀為大致圓形。延伸部24b沿著電極墊13的主面13a延伸。延伸部24b的長度例如可設為與焊針8的前端徑同等，或較焊針8的前端徑更大。延伸部24b於無需對電極墊13物理及電性連接的方面而言，與接合部24a不同。例如，延伸部24b亦可接觸電極墊13。根據該狀態，能夠視為延伸部24b對電極墊13電性連接。另一方面，延伸部24b無法對朝向主面13a的法線方向的拉伸力進行抵抗，故而不可謂物理連接。然而，延伸部24b並不排除對電極墊13物理連接的狀態，故而延伸部24b亦可對電極墊13物理連接。再者，延伸部24b亦可不對電極墊13進行接觸，而是延伸部24b自電極墊13的主面13a稍許遠離。根據該狀態，延伸部24b對電極墊13並未電性連接，亦未物理連接。 The extension portion 24b is a part of the first wire portion 24 continuously extending from the joining portion 24a. The extension part 24b maintains the cross-sectional shape of the wire 20, and the cross-sectional shape is substantially circular. The extension portion 24b extends along the main surface 13a of the electrode pad 13. The length of the extension portion 24b can be set to be the same as the tip diameter of the solder pin 8 or larger than the tip diameter of the solder pin 8, for example. The extension portion 24b is different from the junction portion 24a in that it does not need to be physically and electrically connected to the electrode pad 13. For example, the extension 24b may also contact the electrode pad 13. According to this state, it can be considered that the extension portion 24b is electrically connected to the electrode pad 13. On the other hand, the extension portion 24b cannot resist the tensile force toward the normal direction of the main surface 13a, and therefore cannot be described as a physical connection. However, the extension part 24b does not exclude the state of being physically connected to the electrode pad 13, so the extension part 24b can also be physically connected to the electrode pad 13. Furthermore, the extension portion 24b may not contact the electrode pad 13 but the extension portion 24b is slightly away from the main surface 13a of the electrode pad 13. According to this state, the extension portion 24b is not electrically connected to the electrode pad 13, nor is it physically connected.

第二導線部26經由後述的第一彎曲部28而與第一導線部24的延伸部24b連續，沿與電極墊13的主面13a交叉的方向D2延伸。例如，第二導線部26亦可設為沿主面13a的法線方向延伸。即，第二導線部26為自主面13a豎起的導線20的一部分。第二導線部26延伸的方向D2(第二方向)與第一導線部24的延伸部24b延伸的方向D1(第一方向)所成的角度A1可為直角以下(90度以下)。換言之，方向D1、方向D2所成的角度A1為銳 角。作為一例，角度A1可設為20度以上且60度以下。即，第二導線部26延伸的方向D2包含主面13a的法線方向的成分、以及與第一導線部24的延伸部24b延伸的方向D1為相反方向的成分，相對於主面13a的法線方向而傾斜。另一方面，方向D1、方向D2所成的角度大於0度。即，方向D2相對於方向D1不平行。換言之，第二導線部26不對第一導線部24的延伸部24b進行接觸。第二導線部26的長度例如可設為與第一導線部24的延伸部24b相同程度。第二導線部26與第一導線部24的延伸部24b同樣地保持導線20的剖面形狀，剖面形狀為大致圓形。 The second lead portion 26 is continuous with the extension portion 24 b of the first lead portion 24 via a first bent portion 28 described later, and extends in a direction D2 intersecting the main surface 13 a of the electrode pad 13. For example, the second lead portion 26 may be extended in the normal direction of the main surface 13a. That is, the second wire portion 26 is a part of the wire 20 that rises from the main surface 13a. The angle A1 formed by the extending direction D2 (second direction) of the second wire portion 26 and the extending direction D1 (first direction) of the extending portion 24b of the first wire portion 24 may be a right angle or less (90 degrees or less). In other words, the angle A1 formed by the direction D1 and the direction D2 is sharp Horn. As an example, the angle A1 can be set to 20 degrees or more and 60 degrees or less. That is, the direction D2 in which the second wire portion 26 extends includes a component in the normal direction of the main surface 13a and a component in the opposite direction to the direction D1 in which the extension portion 24b of the first wire portion 24 extends. The line direction is inclined. On the other hand, the angle formed by the direction D1 and the direction D2 is greater than 0 degrees. That is, the direction D2 is not parallel to the direction D1. In other words, the second wire portion 26 does not make contact with the extension portion 24b of the first wire portion 24. The length of the second wire portion 26 can be set to the same extent as the extension portion 24b of the first wire portion 24, for example. The second wire portion 26 maintains the cross-sectional shape of the wire 20 similarly to the extension portion 24b of the first wire portion 24, and the cross-sectional shape is substantially circular.

第三導線部27經由後述的第二彎曲部29而與第二導線部26連續。第三導線部27的端部連接於半導體晶片12的電極墊14。因此，第三導線部27的長度大致對應於自電極墊13至電極墊14為止的距離。第三導線部27的形狀為圓弧狀，故而較自電極墊13至電極墊14為止的直線距離更長。第三導線部27自電路基板11的電極墊13向半導體晶片12的電極墊14延伸。例如，第二導線部26延伸的方向D2與第三導線部27延伸的方向D3(第三方向)所成的角度A2大於直角(90度以上)，為鈍角。作為一例，角度A2可設為90度以上且120度以下。第三導線部27除了連接於電極墊14的端部以外，亦與第一導線部24的延伸部24b同樣地保持導線20的剖面形狀，剖面形狀為大致圓形。 The third wire portion 27 is continuous with the second wire portion 26 via a second bending portion 29 described later. The end of the third lead portion 27 is connected to the electrode pad 14 of the semiconductor chip 12. Therefore, the length of the third lead portion 27 approximately corresponds to the distance from the electrode pad 13 to the electrode pad 14. The shape of the third lead portion 27 is an arc shape, so it is longer than the straight line distance from the electrode pad 13 to the electrode pad 14. The third lead portion 27 extends from the electrode pad 13 of the circuit board 11 to the electrode pad 14 of the semiconductor wafer 12. For example, the angle A2 formed by the direction D2 in which the second wire portion 26 extends and the direction D3 (the third direction) in which the third wire portion 27 extends is greater than a right angle (90 degrees or more), which is an obtuse angle. As an example, the angle A2 can be set to 90 degrees or more and 120 degrees or less. In addition to being connected to the end of the electrode pad 14, the third lead portion 27 also maintains the cross-sectional shape of the lead 20 in the same manner as the extension portion 24b of the first lead portion 24, and the cross-sectional shape is substantially circular.

第一彎曲部28設於第一導線部24與第二導線部26之間。即，第一彎曲部28為使第一導線部24的延伸部24b延伸的 方向D1變化為第二導線部26延伸的方向D2的部分。該第一彎曲部28的形狀為圓弧狀。第一彎曲部28為經實施彎曲加工的導線20的一部分。關於形成第一彎曲部28的彎曲加工的詳細內容，將於後述。該彎曲加工使導線20發生塑性變形。根據該塑性變形，於第一彎曲部28產生加工硬化。因此，第一彎曲部28的強度有時高於原本的導線20所具有的強度。 The first bending portion 28 is provided between the first wire portion 24 and the second wire portion 26. That is, the first bending portion 28 is for extending the extension portion 24b of the first wire portion 24 The direction D1 changes to the portion of the direction D2 in which the second wire portion 26 extends. The shape of the first curved portion 28 is an arc shape. The first bending portion 28 is a part of the conductive wire 20 subjected to bending processing. The details of the bending process for forming the first bending portion 28 will be described later. This bending process plastically deforms the wire 20. According to this plastic deformation, work hardening occurs in the first bent portion 28. Therefore, the strength of the first bent portion 28 may be higher than the strength of the original wire 20.

第二彎曲部29設於第二導線部26與第三導線部27之間。即，第二彎曲部29為使第二導線部26延伸的方向D2變化為第三導線部27延伸的方向D3的部分。該第二彎曲部29的形狀與第一彎曲部28同樣地為圓弧狀。第二彎曲部29為經實施彎曲加工的導線20的一部分。關於形成第二彎曲部29的彎曲加工的詳細內容，將於後述。因此，與第一彎曲部28同樣地，第二彎曲部29為發生塑性變形的部位，產生加工硬化。 The second bending portion 29 is provided between the second wire portion 26 and the third wire portion 27. That is, the second bending portion 29 is a portion that changes the direction D2 in which the second wire portion 26 extends to the direction D3 in which the third wire portion 27 extends. The shape of the second curved portion 29 is an arc shape like the first curved portion 28. The second bending portion 29 is a part of the conductive wire 20 subjected to bending processing. The details of the bending process for forming the second bending portion 29 will be described later. Therefore, similarly to the first curved portion 28, the second curved portion 29 is a portion that undergoes plastic deformation, and work hardening occurs.

[半導體裝置的製造方法] [Method of Manufacturing Semiconductor Device]

所述半導體裝置10是由打線接合裝置1製造。以下，一方面參照圖3、圖4、圖5以及圖6的(a)部分、(b)部分及(c)部分，一方面對打線接合裝置1的控制單元4的控制動作及半導體裝置10的製造方法進行說明。 The semiconductor device 10 is manufactured by the wire bonding device 1. Hereinafter, referring to parts (a), (b) and (c) of FIG. 3, FIG. 4, FIG. 5, and FIG. The manufacturing method is described.

圖4表示導線20的形狀及焊針8的目標點。控制單元4具有與預先設定的第一目標點P1~第九目標點P9(第九目標點參照圖9)有關的資訊。控制單元4以焊針8依序移動至該些第一目標點P1~第九目標點P9的方式，向接合單元3提供控制訊號。 另外，控制單元4亦將下述控制訊號提供給接合單元3，該控制訊號控制移動中的導線20的抽出的允許與停止。進而，控制單元4亦將下述控制訊號提供給接合單元3，該控制訊號控制自焊針8的超音波等的提供的允許與停止。 FIG. 4 shows the shape of the wire 20 and the target point of the solder pin 8. The control unit 4 has information related to the preset first target point P1 to the ninth target point P9 (refer to FIG. 9 for the ninth target point). The control unit 4 provides a control signal to the joining unit 3 in a manner that the welding needle 8 moves to the first target point P1 to the ninth target point P9 in sequence. In addition, the control unit 4 also provides the following control signal to the joining unit 3, and the control signal controls the permission and stop of the extraction of the moving wire 20. Furthermore, the control unit 4 also provides the following control signal to the joining unit 3, and the control signal controls the permission and stop of the provision of ultrasonic waves from the soldering pin 8 and the like.

第一目標點P1表示將導線20接合於電極墊13的位置。換言之，第一目標點P1為形成接合部24a的位置。於導線20的接合時，將導線20按壓於電極墊13的主面13a。因此，所謂第一目標點P1，設定於電極墊13的主面13a上。更詳細而言，自主面13a至第一目標點P1為止的距離與導線20的直徑同等，或略小於導線20的直徑。 The first target point P1 indicates the position where the wire 20 is bonded to the electrode pad 13. In other words, the first target point P1 is a position where the joint 24a is formed. When the lead wire 20 is joined, the lead wire 20 is pressed against the main surface 13a of the electrode pad 13. Therefore, the so-called first target point P1 is set on the main surface 13 a of the electrode pad 13. In more detail, the distance from the main surface 13 a to the first target point P1 is equal to or slightly smaller than the diameter of the wire 20.

第二目標點P2為用以形成延伸部24b的一部分的位置。第二目標點P2設定於第一目標點P1的正上方。以下的說明中，將沿著主面13a的法線遠離主面13a的方向稱為「上方向」。另外，將沿著法線靠近主面13a的方向稱為「下方向」。第二目標點P2設定於通過第一目標點P1的主面13a的法線上。自主面13a至第二目標點P2為止的距離較自主面13a至第一目標點P1為止的距離更大。自第一目標點P1至第二目標點P2為止的距離例如可基於延伸部24b的長度而決定。 The second target point P2 is a position for forming a part of the extension portion 24b. The second target point P2 is set directly above the first target point P1. In the following description, the direction away from the main surface 13a along the normal line of the main surface 13a is referred to as the "upward direction". In addition, the direction approaching the main surface 13a along the normal line is called "downward direction." The second target point P2 is set on a normal line passing through the main surface 13a of the first target point P1. The distance from the autonomous surface 13a to the second target point P2 is greater than the distance from the autonomous surface 13a to the first target point P1. The distance from the first target point P1 to the second target point P2 can be determined based on the length of the extension portion 24b, for example.

第三目標點P3亦為用以形成延伸部24b的一部分的位置。第三目標點P3設定於相對於第二目標點P2沿著與法線正交的軸線(以下記作「平行軸線」)遠離的位置。以下的說明中，將沿著平行軸線自電極墊13朝向電極墊14的方向稱為「順向」。另 外，將沿著平行軸線自電極墊14朝向電極墊13的方向稱為「逆向」。即，第三目標點P3設定於自第二目標點P2順向遠離既定距離的位置。例如，自第二目標點P2至第三目標點P3為止的距離例如可基於延伸部24b的長度而決定。即，自第二目標點P2至第三目標點P3為止的距離可與自第一目標點P1至第二目標點P2為止的距離同等，或亦可更大，或亦可更短。 The third target point P3 is also a position for forming a part of the extension portion 24b. The third target point P3 is set at a position away from the second target point P2 along an axis orthogonal to the normal (hereinafter referred to as "parallel axis"). In the following description, the direction from the electrode pad 13 to the electrode pad 14 along the parallel axis is referred to as the "forward direction". Other In addition, the direction from the electrode pad 14 to the electrode pad 13 along the parallel axis is referred to as "reverse direction". That is, the third target point P3 is set at a position away from the second target point P2 by a predetermined distance in the forward direction. For example, the distance from the second target point P2 to the third target point P3 can be determined based on the length of the extension portion 24b, for example. That is, the distance from the second target point P2 to the third target point P3 may be the same as the distance from the first target point P1 to the second target point P2, or may be greater or shorter.

第四目標點P4為用以形成第一彎曲部28的位置。第四目標點P4是以相對於第三目標點P3朝下方向遠離的方式設定。因此，所謂自第三目標點P3向第四目標點P4的移動，是指朝下方向的移動。第四目標點P4是以較第一目標點P1更接近電極墊14的方式設定。第四目標點P4可以含有於主面13a的方式設定，或亦可設定於自主面13a遠離既定距離的位置。自主面13a至第四目標點P4為止的距離亦可與自主面13a至第一目標點P1為止的距離無關地設定。即，自主面13a至第四目標點P4為止的距離可與自主面13a至第一目標點P1為止的距離同等，或亦可更小。自第三目標點P3至第四目標點P4為止的距離例如可基於第二導線部26的長度而決定。 The fourth target point P4 is a position for forming the first curved portion 28. The fourth target point P4 is set to be away from the third target point P3 in the downward direction. Therefore, the movement from the third target point P3 to the fourth target point P4 refers to movement in the downward direction. The fourth target point P4 is set to be closer to the electrode pad 14 than the first target point P1. The fourth target point P4 may be set to be included in the main surface 13a, or may be set at a position away from the main surface 13a by a predetermined distance. The distance from the autonomous surface 13a to the fourth target point P4 may be set independently of the distance from the autonomous surface 13a to the first target point P1. That is, the distance from the autonomous surface 13a to the fourth target point P4 may be the same as the distance from the autonomous surface 13a to the first target point P1, or may be smaller. The distance from the third target point P3 to the fourth target point P4 can be determined based on the length of the second wire portion 26, for example.

第五目標點P5為用以形成第二導線部26的位置。第五目標點P5位於第四目標點P4的上方向。因此，於法線方向，第三目標點P3、第四目標點P4及第五目標點P5設定於同一線上。即，所謂自第四目標點P4向第五目標點P5的移動，為朝上方向的移動。另外，第五目標點P5設定於較第四目標點P4更靠上方。 例如，自主面13a至第五目標點P5為止的距離較自主面13a至第四目標點P4為止的距離更大。另一方面，圖7的(b)部分例示自主面13a至第五目標點P5為止的距離較自主面13a至第三目標點P3為止的距離更小的情形。自主面13a至第五目標點P5為止的距離可與自主面13a至第三目標點P3為止的距離相同，或亦可更大。自第四目標點P4至第五目標點P5為止的距離例如可基於第二導線部26的長度而決定。 The fifth target point P5 is a position for forming the second wire portion 26. The fifth target point P5 is located in the upper direction of the fourth target point P4. Therefore, in the normal direction, the third target point P3, the fourth target point P4, and the fifth target point P5 are set on the same line. That is, the movement from the fourth target point P4 to the fifth target point P5 is a movement in the upward direction. In addition, the fifth target point P5 is set higher than the fourth target point P4. For example, the distance from the autonomous surface 13a to the fifth target point P5 is greater than the distance from the autonomous surface 13a to the fourth target point P4. On the other hand, part (b) of FIG. 7 illustrates a case where the distance from the main surface 13a to the fifth target point P5 is smaller than the distance from the main surface 13a to the third target point P3. The distance from the autonomous surface 13a to the fifth target point P5 may be the same as the distance from the autonomous surface 13a to the third target point P3, or may be greater. The distance from the fourth target point P4 to the fifth target point P5 can be determined based on the length of the second wire portion 26, for example.

第六目標點P6亦為用以形成第二導線部26的位置。第六目標點P6設定於相對於第五目標點P5逆向遠離的位置。即，所謂自第五目標點P5向第六目標點P6的移動，為朝逆向的移動。再者，圖7的(c)部分例示下述情形，即：於水平方向，自第五目標點P5至第六目標點P6為止的距離較自第五目標點P5至第一目標點P1或第二目標點P2為止的距離更大。自第五目標點P5至第六目標點P6為止的距離可與自第五目標點P5至第一目標點P1或第二目標點P2為止的沿著平行軸線的距離相同，或亦可更小。自第五目標點P5至第六目標點P6為止的距離例如可基於第二導線部26的長度而決定。 The sixth target point P6 is also a position for forming the second wire portion 26. The sixth target point P6 is set at a position away from the fifth target point P5 in the reverse direction. That is, the movement from the fifth target point P5 to the sixth target point P6 is a movement in the reverse direction. Furthermore, part (c) of FIG. 7 illustrates the following situation, that is, in the horizontal direction, the distance from the fifth target point P5 to the sixth target point P6 is shorter than the distance from the fifth target point P5 to the first target point P1 or The distance to the second target point P2 is greater. The distance from the fifth target point P5 to the sixth target point P6 may be the same as the distance along the parallel axis from the fifth target point P5 to the first target point P1 or the second target point P2, or may be smaller . The distance from the fifth target point P5 to the sixth target point P6 can be determined based on the length of the second wire portion 26, for example.

第七目標點P7為用以形成第二彎曲部29的位置。第七目標點P7是以相對於第六目標點P6朝下方向遠離的方式設定。即，第七目標點P7是以較第六目標點P6更接近電極墊13的方式設定。即，所謂自第六目標點P6向第七目標點P7的移動，為朝下方向的移動。例如，自主面13a至第七目標點P7為止的距離較 自主面13a至第六目標點P6為止的距離小。自第六目標點P6至第七目標點P7為止的距離亦可基於使導線20發生塑性變形所要求的移動量而決定。所謂使所述導線20發生塑性變形所要求的移動量，例如亦可基於導線20的直徑而決定。作為一例，自第六目標點P6至第七目標點P7為止的距離亦可設為導線20的直徑的1.5倍左右。 The seventh target point P7 is a position for forming the second curved portion 29. The seventh target point P7 is set to be away from the sixth target point P6 in the downward direction. That is, the seventh target point P7 is set to be closer to the electrode pad 13 than the sixth target point P6. That is, the movement from the sixth target point P6 to the seventh target point P7 is a downward movement. For example, the distance from the autonomous surface 13a to the seventh target point P7 is relatively The distance from the main surface 13a to the sixth target point P6 is small. The distance from the sixth target point P6 to the seventh target point P7 may also be determined based on the amount of movement required to plastically deform the wire 20. The amount of movement required to plastically deform the lead wire 20 may be determined based on the diameter of the lead wire 20, for example. As an example, the distance from the sixth target point P6 to the seventh target point P7 may be about 1.5 times the diameter of the wire 20.

第八目標點P8為用以形成第三導線部27的位置。第八目標點P8位於第七目標點P7的上方向。因此，於法線方向，第六目標點P6、第七目標點P7及第八目標點P8設定於同一線上。即，所謂自第七目標點P7向第八目標點P8的移動，為朝上方向的移動。另外，第八目標點P8設定於較第七目標點P7更靠上方。例如，自主面13a至第八目標點P8為止的距離較自主面13a至第七目標點P7為止的距離更大。自第七目標點P7至第八目標點P8為止的距離例如可基於第三導線部27的長度而決定。 The eighth target point P8 is a position for forming the third wire portion 27. The eighth target point P8 is located in the upper direction of the seventh target point P7. Therefore, in the normal direction, the sixth target point P6, the seventh target point P7, and the eighth target point P8 are set on the same line. That is, the movement from the seventh target point P7 to the eighth target point P8 is a movement in the upward direction. In addition, the eighth target point P8 is set higher than the seventh target point P7. For example, the distance from the autonomous surface 13a to the eighth target point P8 is greater than the distance from the autonomous surface 13a to the seventh target point P7. The distance from the seventh target point P7 to the eighth target point P8 can be determined based on the length of the third wire portion 27, for example.

第九目標點P9(參照圖9)亦為用以形成第三導線部27的位置。第九目標點P9設定於半導體晶片12上。更詳細而言，設定於半導體晶片12的電極墊14上。因此，所謂自第八目標點P8向第九目標點P9的移動，為朝順向的移動。 The ninth target point P9 (refer to FIG. 9) is also a position for forming the third wire portion 27. The ninth target point P9 is set on the semiconductor chip 12. In more detail, it is set on the electrode pad 14 of the semiconductor wafer 12. Therefore, the movement from the eighth target point P8 to the ninth target point P9 is a movement in the forward direction.

<第一步驟> <First Step>

控制單元4將第一控制訊號提供給接合單元3(參照圖5的步驟S10以及圖6的(a)部分、圖6的(b)部分及圖6的(c)部分)。第一控制訊號包含：使焊針8移動至第一目標點P1的動 作、自焊針8以既定期間放射超音波的動作(步驟S11)、使焊針8移動至第二目標點P2的動作(步驟S12)、使焊針8移動至第三目標點P3的動作(步驟S13)、以及允許抽出導線20的動作。 The control unit 4 provides the first control signal to the joining unit 3 (refer to step S10 of FIG. 5 and part (a) of FIG. 6, part (b) of FIG. 6 and part (c) of FIG. 6). The first control signal includes: the motion to move the soldering pin 8 to the first target point P1 Operation, the action of radiating ultrasonic waves from the soldering needle 8 in a predetermined period (step S11), the action of moving the soldering needle 8 to the second target point P2 (step S12), the action of moving the soldering needle 8 to the third target point P3 (Step S13), and allow the wire 20 to be drawn out.

接受第一控制訊號的接合單元3首先使焊針8移動至第一目標點P1。此時，焊針8的前端對電極墊13按壓導線20。繼而，接合單元3自焊針8的前端以既定期間放射超音波。於是，被按壓於焊針8的前端的導線20的一部分變形為扁平狀。藉由該變形，導線20對電極墊13進行接合。其結果為，形成接合部24a。 The joining unit 3 receiving the first control signal first moves the soldering needle 8 to the first target point P1. At this time, the tip of the solder pin 8 presses the wire 20 against the electrode pad 13. Then, the bonding unit 3 radiates ultrasonic waves from the tip of the solder pin 8 for a predetermined period of time. Then, a part of the lead wire 20 pressed against the tip of the solder pin 8 is deformed into a flat shape. With this deformation, the wire 20 is bonded to the electrode pad 13. As a result, the joining portion 24a is formed.

繼而，接合單元3使焊針8自第一目標點P1移動至第二目標點P2(參照步驟S12、圖6的(b)部分)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第一目標點P1移動至第二目標點P2。此處抽出的導線20構成延伸部24b。 Then, the bonding unit 3 moves the solder pin 8 from the first target point P1 to the second target point P2 (refer to step S12, part (b) of FIG. 6). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 moves the soldering needle 8 from the first target point P1 to the second target point P2 while pulling out the wire 20. The lead wire 20 drawn here constitutes an extension portion 24b.

繼而，接合單元3使焊針8自第二目標點P2移動至第三目標點P3(參照步驟S13、圖6的(c)部分)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第二目標點P2移動至第三目標點P3。此處抽出的導線20亦構成延伸部24b。 Then, the joining unit 3 moves the solder pin 8 from the second target point P2 to the third target point P3 (refer to step S13, part (c) of FIG. 6). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 moves the soldering needle 8 from the second target point P2 to the third target point P3 while pulling out the wire 20. The wire 20 drawn here also constitutes an extension 24b.

再者，步驟S12、步驟S13只要可使焊針8自第一目標點P1移動至第三目標點P3即可。例如，作為相當於步驟S12、步驟S13的步驟，亦可自第一目標點P1直接移動至第三目標點P3。換言之，焊針8亦可不經由第二目標點P2。例如，亦可使焊 針8沿著將第一目標點P1與第三目標點P3連結的直線軌跡移動。另外，亦可使焊針8沿著通過第一目標點P1及第三目標點P3的圓弧軌跡移動。 Furthermore, in step S12 and step S13, the solder pin 8 can be moved from the first target point P1 to the third target point P3. For example, as a step equivalent to step S12 and step S13, it is also possible to directly move from the first target point P1 to the third target point P3. In other words, the solder pin 8 may not pass through the second target point P2. For example, welding The needle 8 moves along a linear trajectory connecting the first target point P1 and the third target point P3. In addition, the welding needle 8 may also be moved along a circular arc path passing through the first target point P1 and the third target point P3.

<第二步驟> <Second step>

控制單元4將第二控制訊號提供給接合單元3(參照圖5的步驟S20及圖7的(a)部分)。第二控制訊號包含使焊針8移動至第四目標點P4的動作。 The control unit 4 provides the second control signal to the joining unit 3 (refer to step S20 of FIG. 5 and part (a) of FIG. 7). The second control signal includes an action to move the solder pin 8 to the fourth target point P4.

接受第二控制訊號的接合單元3使焊針8自第三目標點P3下降至第四目標點P4(步驟S20)。此時，接合單元3亦可禁止自焊針8抽出導線20。此時，存在於焊針8內的導線20的一部分與步驟S12、步驟S13中自焊針8抽出的導線20的另一部分具有既定的彎曲角度而連續。具體而言，存在於焊針8的內部的導線20的一部分與主面13a的法線方向一致。另一方面，自焊針8抽出的導線20的另一部分相對於該法線方向而傾斜。例如，導線20的另一部分可設為沿著將第一目標點P1與第三目標點P3連結的假想線。因此，導線20的一部分與導線20的另一部分的連接部分彎曲。該連接部分於焊針8的前端部分產生。 The joining unit 3 receiving the second control signal lowers the solder pin 8 from the third target point P3 to the fourth target point P4 (step S20). At this time, the bonding unit 3 may also prohibit the wire 20 from being pulled out from the solder pin 8. At this time, a part of the lead wire 20 existing in the solder pin 8 and another part of the lead wire 20 drawn from the solder pin 8 in step S12 and step S13 have a predetermined bending angle and are continuous. Specifically, a part of the lead wire 20 existing inside the solder pin 8 coincides with the normal direction of the main surface 13a. On the other hand, the other part of the wire 20 drawn out from the solder pin 8 is inclined with respect to the normal direction. For example, another part of the wire 20 may be set along an imaginary line connecting the first target point P1 and the third target point P3. Therefore, the connection part of a part of the wire 20 and another part of the wire 20 is bent. This connection part is produced at the front end part of the solder pin 8.

若於該狀態下使焊針8下降，則導線20的一部分與導線20的另一部分之間的角度變小。具體而言，導線20的一部分與導線20的另一部分之間的角度逐漸接近直角。即，導線20的一部分與導線20的另一部分的連接部分經實施彎曲加工。而且，若該彎曲的程度變大，則導線20的一部分與導線20的另一部分 的連接部分的變形由彈性變形向塑性變形過渡。若連接部分塑性變形，則連接部維持形狀而不恢復成原本的形狀。亦可謂該狀態為所謂的使導線20帶有「曲度」的狀態。即，由第二控制訊號所致的焊針8的下降為使導線20帶有「曲度」的步驟。而且，包含藉由第二控制訊號所致的焊針8的下降而帶有的「曲度」的部分為本實施形態的第一彎曲部28。 If the solder pin 8 is lowered in this state, the angle between a part of the lead wire 20 and the other part of the lead wire 20 will be reduced. Specifically, the angle between a part of the wire 20 and another part of the wire 20 gradually approaches a right angle. That is, the connection part between a part of the lead wire 20 and another part of the lead wire 20 is subjected to bending processing. Moreover, if the degree of bending becomes larger, a part of the wire 20 and another part of the wire 20 The deformation of the connecting part transitions from elastic deformation to plastic deformation. If the connecting portion is plastically deformed, the connecting portion maintains its shape without returning to its original shape. It can also be said that this state is a so-called state in which the wire 20 is "curved". That is, the drop of the soldering pin 8 caused by the second control signal is a step of making the wire 20 "curved". In addition, the portion including the “curvature” caused by the drop of the solder pin 8 caused by the second control signal is the first curved portion 28 of this embodiment.

<第三步驟> <The third step>

控制單元4將第三控制訊號提供給接合單元3(參照圖5的步驟S30以及圖7的(b)部分及(c)部分)。第三控制訊號包含：使焊針8移動至第五目標點P5的動作(步驟S31)、使焊針8移動至第六目標點P6的動作(步驟S32)、及允許抽出導線20的動作。 The control unit 4 provides the third control signal to the joining unit 3 (refer to step S30 of FIG. 5 and parts (b) and (c) of FIG. 7). The third control signal includes: an action of moving the soldering pin 8 to the fifth target point P5 (step S31), an action of moving the soldering pin 8 to the sixth target point P6 (step S32), and an action of allowing the wire 20 to be drawn out.

接受第三控制訊號的接合單元3使焊針8自第四目標點P4移動至第五目標點P5(參照步驟S31、圖7的(b)部分)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第四目標點P4移動至第五目標點P5。此處抽出的導線20構成第二導線部26。 The joining unit 3 receiving the third control signal moves the soldering needle 8 from the fourth target point P4 to the fifth target point P5 (refer to step S31, part (b) of FIG. 7). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 moves the soldering needle 8 from the fourth target point P4 to the fifth target point P5 while pulling out the wire 20. The lead wire 20 drawn here constitutes the second lead part 26.

繼而，接合單元3使焊針8自第五目標點P5移動至第六目標點P6(參照步驟S32、圖7的(c)部分)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第五目標點P5移動至第六目標點P6。此處抽出的導線20亦構成第二導線部26。 Then, the joining unit 3 moves the solder pin 8 from the fifth target point P5 to the sixth target point P6 (refer to step S32, part (c) of FIG. 7). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 moves the soldering needle 8 from the fifth target point P5 to the sixth target point P6 while pulling out the wire 20. The wire 20 drawn out here also constitutes the second wire portion 26.

再者，該步驟S30中，只要可使焊針8自第四目標點P4移動至第六目標點P6即可。例如，步驟S30亦可自第四目標點P4直接移動至第六目標點P6。換言之，於步驟S30中，焊針8亦可不經由第五目標點P5。例如，步驟S30中，亦可使焊針8沿著將第四目標點P4與第六目標點P6連結的直線軌跡移動。 Furthermore, in this step S30, as long as the solder pin 8 can be moved from the fourth target point P4 to the sixth target point P6. For example, step S30 can also directly move from the fourth target point P4 to the sixth target point P6. In other words, in step S30, the solder pin 8 may not pass through the fifth target point P5. For example, in step S30, the solder needle 8 may be moved along a linear trajectory connecting the fourth target point P4 and the sixth target point P6.

<第四步驟> <Fourth step>

控制單元4將第四控制訊號提供給接合單元3(參照圖5的步驟S40及圖8的(a)部分)。第四控制訊號包含使焊針8移動至第七目標點P7的動作。 The control unit 4 provides the fourth control signal to the joining unit 3 (refer to step S40 of FIG. 5 and part (a) of FIG. 8). The fourth control signal includes an action to move the solder pin 8 to the seventh target point P7.

接受第四控制訊號的接合單元3使焊針8自第六目標點P6下降至第七目標點P7(步驟S40)。接合單元3亦可禁止自焊針8抽出導線20。此時，存在於焊針8內的導線20的一部分、與步驟S30中自焊針8抽出的導線20的另一部分具有既定的彎曲角度而連續。即，導線20的一部分與抽出的部分的關係與步驟S20中說明的關係類似。於是，若將焊針8下降，則導線20的一部分、與抽出的部分之間的連接部分的角度變小。而且，若彎曲的程度達到構成導線20的材料所具有的塑性區域，則導線20的一部分、與抽出的部分之間的連接部分發生塑性變形。發生該塑性變形的部分亦與步驟S12、步驟S13同樣地，可稱為帶有「曲度」的部分。因此，導線20的一部分與抽出的部分之間保持經彎曲的形狀。其結果為，於導線20的一部分與抽出的部分之間產生第二彎曲部29。 The joining unit 3 receiving the fourth control signal lowers the solder pin 8 from the sixth target point P6 to the seventh target point P7 (step S40). The bonding unit 3 may also prohibit the wire 20 from being pulled out from the solder pin 8. At this time, a part of the lead wire 20 existing in the solder pin 8 and another part of the lead wire 20 drawn out from the solder pin 8 in step S30 are continuous with a predetermined bending angle. That is, the relationship between a part of the lead wire 20 and the extracted part is similar to the relationship explained in step S20. Then, when the solder pin 8 is lowered, the angle of the connection part between a part of the lead wire 20 and the drawn part becomes small. Then, when the degree of bending reaches the plastic region of the material constituting the wire 20, a part of the wire 20 and the connection part between the drawn part will be plastically deformed. The part where this plastic deformation has occurred can also be referred to as a "curvature" part in the same way as in step S12 and step S13. Therefore, the bent shape is maintained between a part of the wire 20 and the drawn part. As a result, a second bent portion 29 is generated between a part of the lead wire 20 and the drawn part.

<第五步驟> <Fifth Step>

控制單元4將第五控制訊號提供給接合單元3(參照圖5的步驟S50以及圖8的(b)部分及圖9)。第五控制訊號包含：使焊針8移動至第八目標點P8的動作(步驟S51)、使焊針8移動至第九目標點P9的動作(步驟S52)、允許抽出導線20的動作、以及自焊針8以既定期間放射超音波的動作(步驟S53)。 The control unit 4 provides the fifth control signal to the joining unit 3 (refer to step S50 of FIG. 5 and part (b) of FIG. 8 and FIG. 9). The fifth control signal includes: an action of moving the solder pin 8 to the eighth target point P8 (step S51), an action of moving the solder pin 8 to the ninth target point P9 (step S52), an action of allowing the wire 20 to be drawn out, and The operation of radiating ultrasonic waves from the soldering pin 8 for a predetermined period of time (step S53).

接受第五控制訊號的接合單元3使焊針8自第七目標點P7移動至第八目標點P8(參照步驟S51、圖8的(b)部分)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第七目標點P7上升至第八目標點P8。此處抽出的導線20構成第三導線部27的一部分。 The joining unit 3 receiving the fifth control signal moves the solder pin 8 from the seventh target point P7 to the eighth target point P8 (refer to step S51, part (b) of FIG. 8). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 raises the solder pin 8 from the seventh target point P7 to the eighth target point P8 while pulling out the wire 20. The lead wire 20 drawn here constitutes a part of the third lead portion 27.

繼而，接合單元3使焊針8自第八目標點P8移動至第九目標點P9(參照步驟S52、圖9)。進而，接合單元3允許自焊針8抽出導線20。即，接合單元3一邊抽出導線20，一邊使焊針8自第八目標點P8移動至第九目標點P9。此處抽出的導線20亦構成第三導線部27的另一部分。 Then, the joining unit 3 moves the solder pin 8 from the eighth target point P8 to the ninth target point P9 (refer to step S52, FIG. 9). Furthermore, the bonding unit 3 allows the wire 20 to be drawn out from the solder pin 8. That is, the bonding unit 3 moves the soldering needle 8 from the eighth target point P8 to the ninth target point P9 while pulling out the wire 20. The wire 20 drawn out here also constitutes another part of the third wire portion 27.

繼而，接合單元3自焊針8的前端以既定期間放射超音波(參照步驟S52、圖9)。於是，被按壓於焊針8的前端的導線20的一部分變形為扁平狀。藉由該變形，導線20對電極墊14進行接合。 Then, the bonding unit 3 radiates ultrasonic waves for a predetermined period from the tip of the solder pin 8 (refer to step S52 and FIG. 9). Then, a part of the lead wire 20 pressed against the tip of the solder pin 8 is deformed into a flat shape. With this deformation, the wire 20 is bonded to the electrode pad 14.

根據經過所述步驟形成的導線20，可提高拉力強度。以下，與比較例的半導體裝置110進行比較，並且對本實施形態的 半導體裝置10的作用效果進行說明。 According to the wire 20 formed through the steps, the tensile strength can be improved. The following compares with the semiconductor device 110 of the comparative example, and compares the The function and effect of the semiconductor device 10 will be described.

圖11表示比較例的半導體裝置110所具有的導線120的端部。導線120具有連接於電極墊113的接合部123、以及向另一電極墊延伸的導線部124。即，導線120不具有相當於第一導線部24、第二導線部26、第三導線部27、第一彎曲部28以及第二彎曲部29的部位。若對此種導線120施加拉應力，則其負荷作用於自接合部123向斜上方延伸的部分(所謂的頸部125)。該頸部125包含接合部123的一部分，故而其厚度薄。因此，頸部125的強度變得低於導線120所具有的強度。 FIG. 11 shows the end of the wire 120 included in the semiconductor device 110 of the comparative example. The wire 120 has a bonding portion 123 connected to the electrode pad 113 and a wire portion 124 extending to the other electrode pad. That is, the lead wire 120 does not have locations corresponding to the first lead part 24, the second lead part 26, the third lead part 27, the first bent part 28, and the second bent part 29. If a tensile stress is applied to the lead wire 120 of this type, the load acts on a portion (so-called neck 125) extending diagonally upward from the joint 123. The neck 125 includes a part of the joint 123, so its thickness is thin. Therefore, the strength of the neck 125 becomes lower than the strength of the wire 120.

另一方面，本實施形態的導線20於接合部24a與第三導線部27之間，設有延伸部24b、第二導線部26、第一彎曲部28以及第二彎曲部29。即，於接合部24a與第三導線部27之間，抽出有充分長度的導線。而且，導線20包含產生加工硬化的第一彎曲部28以及第二彎曲部29。進而，導線20具有自接合部24a沿著電極墊13延伸的延伸部24b。根據該些構成，於拉應力作用於導線20時，負荷並未直接作用於接合部24a與延伸部24b的連接部分。負荷由在接合部24a與第三導線部27之間抽出的導線、以及產生加工硬化的第一彎曲部28及第二彎曲部29負擔。該些部位並未如接合部24a般受到剖面形狀變化般的加工，故而至少維持導線20原本所具有的強度，亦可謂第一彎曲部28以及第二彎曲部29中藉由加工硬化而強度進一步提高。因此，導線20可提高拉力強度。 On the other hand, the lead wire 20 of this embodiment is provided with an extension part 24b, a second lead part 26, a first bent part 28, and a second bent part 29 between the joining part 24a and the third lead part 27. That is, between the bonding portion 24a and the third wire portion 27, a wire having a sufficient length is drawn out. In addition, the lead wire 20 includes a first bent portion 28 and a second bent portion 29 that undergo work hardening. Furthermore, the lead wire 20 has an extension portion 24b extending from the bonding portion 24a along the electrode pad 13. According to these configurations, when tensile stress acts on the lead wire 20, the load does not directly act on the connection portion of the junction portion 24a and the extension portion 24b. The load is borne by the lead wire drawn between the junction part 24a and the third lead part 27, and the first bending part 28 and the second bending part 29 that have undergone work hardening. These parts are not processed like the cross-sectional shape change like the junction 24a, so at least the strength of the wire 20 is maintained. improve. Therefore, the wire 20 can increase the tensile strength.

作為比較例，將直徑為20微米的導線設為圖11所示般的形狀而架設於電極墊間。另外，導線是以金、銀、鋁、銅分別準備。其結果表明，拉力強度的最低值為1.0gf。繼而，使用實施形態的製造方法將相同的導線架設於電極墊間。圖10表示其一例。其結果表明，拉力強度的最低值為2.5gf。即得知，於使用實施形態的打線接合裝置1進行利用實施形態的製造方法的打線接合的情形時，可使拉力強度提高2.5倍左右。 As a comparative example, a wire with a diameter of 20 micrometers was set in a shape as shown in FIG. 11 and set between electrode pads. In addition, the wires are prepared separately from gold, silver, aluminum, and copper. The result shows that the minimum value of tensile strength is 1.0 gf. Then, using the manufacturing method of the embodiment, the same lead wire is bridged between the electrode pads. Fig. 10 shows an example of this. The result shows that the minimum value of tensile strength is 2.5gf. That is, it is found that when the wire bonding device 1 of the embodiment is used for wire bonding by the manufacturing method of the embodiment, the tensile strength can be increased by about 2.5 times.

以上，對本發明的實施形態進行了說明，但不限定於所述實施形態，亦可以各種形態實施。 As mentioned above, although the embodiment of this invention was described, it is not limited to the said embodiment, It can implement in various forms.

13:電極墊(第一電極) 13: Electrode pad (first electrode)

13a:主面 13a: main side

20:導線(接合導線) 20: Wire (bonding wire)

21:端部(一端) 21: end (one end)

24:第一導線部 24: The first wire part

24a:接合部(接合部) 24a: Joint (joint)

24b:延伸部 24b: Extension

26:第二導線部 26: The second wire part

27:第三導線部 27: Third wire part

28:第一彎曲部 28: The first bend

29:第二彎曲部 29: second bend

A1、A2:角度 A1, A2: Angle

D1、D2、D3:方向 D1, D2, D3: direction

Claims (14)

一種半導體裝置，包括：第一電極；第二電極，與所述第一電極電性連接；以及接合導線，一端接合於所述第一電極，另一端接合於所述第二電極，所述接合導線具有：第一導線部，沿著所述第一電極的表面延伸，一部分被按壓而與所述第一電極電性接合；第二導線部，以不接觸所述第一導線部的方式，沿自所述第一電極的表面立起的方向延伸；第三導線部，向所述第二電極延伸，端部被按壓而與所述第二電極電性接合；第一彎曲部，將所述第一導線部延伸的方向彎曲成所述第二導線部延伸的方向；以及第二彎曲部，將所述第二導線部延伸的方向彎曲成所述第三導線部延伸的方向。 A semiconductor device includes: a first electrode; a second electrode electrically connected to the first electrode; and a bonding wire, one end of which is connected to the first electrode and the other end to the second electrode. The wire has: a first wire portion extending along the surface of the first electrode, a part of which is pressed to be electrically connected to the first electrode; and a second wire portion, which does not contact the first wire portion, Extends in the direction rising from the surface of the first electrode; the third lead part extends to the second electrode, and the end is pressed to be electrically connected to the second electrode; the first bend part connects the The direction in which the first wire portion extends is bent into the direction in which the second wire portion extends; and the second bending portion is configured to bend the direction in which the second wire portion extends to the direction in which the third wire portion extends. 如請求項1所述的半導體裝置，其中所述第一導線部包含接合部以及延伸部，所述接合部與所述第一電極電性接合，所述延伸部與所述接合部及所述第二導線部連續，所述延伸部的長度較所述接合部的長度更長。 The semiconductor device according to claim 1, wherein the first lead portion includes a bonding portion and an extension portion, the bonding portion is electrically connected to the first electrode, and the extension portion is electrically connected to the bonding portion and the The second wire portion is continuous, and the length of the extension portion is longer than the length of the joint portion. 如請求項1或請求項2所述的半導體裝置，其中於所述第一彎曲部中，所述第一導線部延伸的第一方向與所述第二導線部延伸的第二方向所成的角度為90度以下。 The semiconductor device according to claim 1 or claim 2, wherein in the first bending portion, a first direction in which the first wire portion extends and a second direction in which the second wire portion extends are formed The angle is 90 degrees or less. 如請求項1或請求項2所述的半導體裝置，其中於所述第二彎曲部中，所述第二導線部延伸的第二方向與所述第三導線部延伸的第三方向所成的角度為90度以上。 The semiconductor device according to claim 1 or claim 2, wherein in the second bending portion, the second direction in which the second wire portion extends is formed by the third direction in which the third wire portion extends The angle is 90 degrees or more. 如請求項1或請求項2所述的半導體裝置，其中所述第一彎曲部為所述接合導線塑性變形的部分。 The semiconductor device according to claim 1 or 2, wherein the first bent portion is a part where the bonding wire is plastically deformed. 如請求項1或請求項2所述的半導體裝置，其中所述第二彎曲部為所述接合導線塑性變形的部分。 The semiconductor device according to claim 1 or 2, wherein the second bent portion is a part where the bonding wire is plastically deformed. 一種半導體裝置的製造方法，為包括第一電極、與所述第一電極電性連接的第二電極、以及一端接合於所述第一電極且另一端接合於所述第二電極的接合導線的半導體裝置的製造方法，包括：第一步驟，使用焊針將所述接合導線的一端接合於所述第一電極後，一邊抽出所述接合導線，一邊使所述焊針的前端移動至較所述接合導線的接合部更靠所述第二電極側且較所述接合部更靠上方的位置；第二步驟，使所述焊針的前端向所述第一電極下降並將所述接合導線的一部分按壓於所述第一電極，藉此形成第一彎曲部；第三步驟，一邊抽出所述接合導線，一邊使所述焊針的前端移動至較所述第一彎曲部更靠所述接合部側且較所述接合部更靠 上方的位置；以及第四步驟，使所述焊針的前端向所述第一電極下降，藉此形成第二彎曲部。 A method for manufacturing a semiconductor device includes a first electrode, a second electrode electrically connected to the first electrode, and a bonding wire with one end joined to the first electrode and the other end to the second electrode The method of manufacturing a semiconductor device includes: a first step of using a solder pin to bond one end of the bonding wire to the first electrode, and then pulling out the bonding wire while moving the tip of the solder pin to a lower position. The bonding part of the bonding wire is closer to the second electrode side and above the bonding part; in the second step, the tip of the soldering pin is lowered toward the first electrode and the bonding wire A part of the first electrode is pressed against the first electrode, thereby forming a first bend; in the third step, while pulling out the bonding wire, the tip of the soldering pin is moved to be closer to the first bend than the first bend. On the joint side and closer to the joint The upper position; and the fourth step, lowering the tip of the soldering pin toward the first electrode, thereby forming a second bend. 如請求項7所述的半導體裝置的製造方法，其中所述第一步驟包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導線，一邊使所述焊針上升的步驟；以及一邊沿著與所述第一電極的表面的法線方向交叉的方向朝所述第二電極側抽出所述接合導線，一邊使所述焊針移動的步驟。 The method of manufacturing a semiconductor device according to claim 7, wherein the first step includes a step of raising the solder pins while drawing the bonding wire in a direction normal to the surface of the first electrode And the step of moving the solder pin while pulling out the bonding wire toward the second electrode in a direction crossing the normal direction of the surface of the first electrode. 如請求項7或請求項8所述的半導體裝置的製造方法，其中所述第三步驟包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導線，一邊使所述焊針上升的步驟；以及一邊沿著與所述第一電極的表面的法線方向交叉的方向朝所述接合部側抽出所述接合導線，一邊使所述焊針移動的步驟。 The method of manufacturing a semiconductor device according to claim 7 or claim 8, wherein the third step includes: drawing out the bonding wire along the normal direction of the surface of the first electrode while making the soldering A step of raising the needle; and a step of moving the soldering needle while pulling out the bonding wire toward the bonding portion in a direction intersecting the normal direction of the surface of the first electrode. 如請求項7或請求項8所述的半導體裝置的製造方法，其中於所述第四步驟之後，更具有：第五步驟，使用所述焊針將所述接合導線的另一端接合於所述第二電極，所述第五步驟包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導 線，一邊使所述焊針上升的步驟；使所述焊針的前端移動至所述第二電極上的位置的步驟；以及將所述接合導線的另一端接合於所述第二電極的步驟。 The method for manufacturing a semiconductor device according to claim 7 or claim 8, wherein after the fourth step, there is further: a fifth step of using the solder pin to bond the other end of the bonding wire to the The second electrode, the fifth step includes: pulling out the bonding conductor along the normal direction of the surface of the first electrode. Wire, the step of raising the solder pin on one side; the step of moving the tip of the solder pin to the position on the second electrode; and the step of bonding the other end of the bonding wire to the second electrode . 一種打線接合裝置，製造包括第一電極、與所述第一電極電性連接的第二電極、以及一端接合於所述第一電極且另一端接合於所述第二電極的接合導線的半導體裝置，所述打線接合裝置包括：接合單元，包含以能夠移動的方式構成的焊針；以及控制單元，控制所述接合單元的動作，所述控制單元將下述控制訊號提供給所述接合單元：第一控制訊號，使用所述焊針將所述接合導線的一端接合於所述第一電極後，一邊抽出所述接合導線，一邊使所述焊針的前端移動至較所述接合導線的接合部更靠所述第二電極側且較所述接合部更靠上方的位置；第二控制訊號，使所述焊針的前端向所述第一電極下降並將所述接合導線的一部分按壓於所述第一電極，藉此形成第一彎曲部；第三控制訊號，一邊抽出所述接合導線，一邊使所述焊針的前端移動至較所述第一彎曲部更靠所述接合部側且較所述接合部更靠上方的位置；以及第四控制訊號，使所述焊針的前端向所述第一電極下降，藉 此形成第二彎曲部。 A wire bonding device for manufacturing a semiconductor device including a first electrode, a second electrode electrically connected to the first electrode, and a bonding wire with one end connected to the first electrode and the other end to the second electrode , The wire bonding device includes: a bonding unit including a welding needle configured in a movable manner; and a control unit that controls the operation of the bonding unit, and the control unit provides the following control signals to the bonding unit: The first control signal is to use the soldering needle to join one end of the bonding wire to the first electrode, and while pulling out the bonding wire, move the tip of the soldering needle to a higher level than the bonding of the bonding wire. The part is closer to the second electrode side and above the joint part; the second control signal causes the tip of the soldering pin to descend toward the first electrode and presses a part of the bonding wire on The first electrode forms a first bent portion thereby; the third control signal moves the tip of the soldering pin to the side of the joining portion while pulling out the bonding wire And a position higher than the joint part; and a fourth control signal, which causes the tip of the solder pin to descend toward the first electrode, by This forms the second bend. 如請求項11所述的打線接合裝置，其中所述第一控制訊號包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導線，一邊使所述焊針上升的控制訊號；以及一邊沿著與所述第一電極的表面的法線方向交叉的方向朝所述第二電極側抽出所述接合導線，一邊使所述焊針移動的控制訊號。 The wire bonding device according to claim 11, wherein the first control signal includes: a control signal for raising the solder pin while drawing the bonding wire along the normal direction of the surface of the first electrode And a control signal for moving the solder pin while pulling out the bonding wire toward the second electrode in a direction crossing the normal direction of the surface of the first electrode. 如請求項11或請求項12所述的打線接合裝置，其中所述第三控制訊號包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導線，一邊使所述焊針上升的控制訊號；以及一邊沿著與所述第一電極的表面的法線方向交叉的方向朝所述接合部側抽出所述接合導線，一邊使所述焊針移動的控制訊號。 The wire bonding device according to claim 11 or claim 12, wherein the third control signal includes: drawing the bonding wire along the normal direction of the surface of the first electrode while making the soldering pin A rising control signal; and a control signal for moving the solder pin while pulling out the bonding wire toward the bonding portion in a direction intersecting the normal direction of the surface of the first electrode. 如請求項11或請求項12所述的打線接合裝置，其中所述控制單元進而將第五控制訊號提供給所述接合單元，所述第五控制訊號使用所述焊針將所述接合導線的另一端接合於所述第二電極，所述第五控制訊號包含：一邊沿著所述第一電極的表面的法線方向抽出所述接合導 線，一邊使所述焊針上升的控制訊號；使所述焊針的前端移動至所述第二電極上的位置的控制訊號；以及使所述接合導線的另一端接合於所述第二電極的控制訊號。 The wire bonding device according to claim 11 or claim 12, wherein the control unit further provides a fifth control signal to the bonding unit, and the fifth control signal uses the solder pin to connect the bonding wire The other end is joined to the second electrode, and the fifth control signal includes: one side of the joining conductor is drawn along the normal direction of the surface of the first electrode. Wire, a control signal for raising the soldering pin on one side; a control signal for moving the tip of the soldering pin to a position on the second electrode; and bonding the other end of the bonding wire to the second electrode Control signal.
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