TWI739341B - Plasma etching apparatus - Google Patents

Abstract

A plasma etching apparatus is suitable for etching a composite material on a work piece during an etching process. The composite material includes a first material and a second material. The plasma etching apparatus includes a vacuum chamber body, a plasma device, and a cleaning mechanism. The vacuum chamber body has a reaction chamber. The plasma device is disposed within the reaction chamber, and is configured to generate plasma to etch the composite material. The plasma has a first etching rate and a second etching rate respectively to the first material and the second material, and the first etching rate is greater than the second etching rate. The cleaning mechanism is disposed within the reaction chamber, and is configured to remove a portion of the second material and a portion of the first material during the etching process by using a physical method. The portion of the second material is greater than the portion of the first material.

Description

Plasma etching equipment

The present invention relates to an etching technique, and particularly relates to a plasma etching equipment.

In recent years, with the rapid development of electronic products such as smart phones, tablet computers, and smart watches, as well as the rapid development of cloud computing and the Internet of Things, it is necessary to continuously increase the computing speed of the device and reduce the power consumption of the device. As a result, the size of integrated circuit (IC) manufacturing is becoming smaller and smaller, and related materials and manufacturing processes are constantly being developed. In the manufacturing of high-end integrated circuits, composite materials are used as the insulating film layer. Due to the good insulating properties of composite materials, the manufacturing capacity of small circuits can be improved.

In the process of integrated circuit manufacturing, plasma dry etching equipment is usually used to etch composite materials. Using general plasma etching equipment, such as reactive ion etching (RIE) equipment, when the generated plasma is used to etch composite materials, it is often encountered that the reaction rates of different materials in the composite material and the plasma are not synchronized The problem is that the plasma has etching selectivity to different materials. The plasma will first remove the more easily etched materials in the composite material, leaving the more difficult to etch materials. However, as these are more difficult to etch The gradual accumulation of material will gradually cover the surface of the workpiece to be processed, which will slow down the plasma etching rate and affect the overall etching effect.

Therefore, one object of the present invention is to provide a plasma etching equipment that includes a cleaning mechanism that can remove materials that are difficult to remove by the plasma device in the composite material, so that the plasma can continue to go down and the composite material that is easier to etch The material reaction can improve the etching rate and uniformity of the composite material.

Another object of the present invention is to provide a plasma etching equipment, the electrode on the plasma device can be a shower head structure with multiple through holes, so that the flow field can be improved, and the etching performance can be improved. Uniformity.

Another object of the present invention is to provide a plasma etching equipment, the removal device includes a lot of protrusions provided on the bottom surface of the electrode on the plasma device, and the through holes of the upper electrode can be correspondingly penetrated in these protrusions , And make the inlet diameter of the through hole larger than the outlet diameter, so that the local high-concentration plasma can be formed more quickly. Therefore, the reactants in the plasma can reach the workpiece faster, and the composite material on the workpiece can be quickly etched, thereby greatly increasing the etching rate.

Another object of the present invention is to provide a plasma etching equipment in which the upper electrode of the plasma device can be connected to electricity, so that the tip of the protrusion on the bottom surface of the upper electrode can form a sharp discharge, thereby increasing the amount of electricity in the vicinity of the protrusion. The dissociation effect of the plasma can further increase the strength of the plasma.

Another object of the present invention is to provide a plasma etching equipment that can perform plasma etching of composite materials and the removal of materials that are difficult to be etched by plasma in composite materials in a vacuum environment. Therefore, when the removal of the subsequent plasma etching is complete During the manufacturing process, there is no need to vacuumize the reaction chamber, and the plasma etching process time can be greatly reduced.

According to the above objective of the present invention, a plasma etching equipment is provided, which is suitable for etching composite materials on a workpiece during an etching process. The composite material includes a first material and a second material. The plasma etching equipment includes a vacuum chamber, a plasma device, and a cleaning mechanism. The vacuum cavity has a reaction chamber, and at least one gas inlet and at least one gas outlet communicating with the reaction chamber. The plasma device is arranged in the reaction chamber and is configured to generate plasma to etch the composite material. The plasma has a first etching rate and a second etching rate for the first material and the second material, respectively, and the first etching rate is greater than the second etching rate. The cleaning mechanism is provided in the reaction chamber and is configured to physically remove part of the second material and part of the first material during the etching process. The portion of the second material is larger than the portion of the first material.

According to an embodiment of the present invention, the above-mentioned plasma device includes an upper electrode and a lower electrode. The upper electrode is arranged in the reaction chamber and adjacent to the gas inlet. The lower electrode is arranged in the reaction chamber and is adjacent to the gas outlet, wherein the lower electrode includes a carrying surface opposite to the upper electrode, and the carrying surface is configured to carry the workpiece.

According to an embodiment of the present invention, the upper electrode has a plurality of through holes passing through the upper electrode.

According to an embodiment of the present invention, the above-mentioned cleaning mechanism includes a plurality of protrusions protruding from the bottom surface of the upper electrode, and the protrusions are configured to use mechanical force to remove the part of the second material and the part of the first material. part.

According to an embodiment of the present invention, each of the aforementioned protrusions is a cylinder, a cone, a needle, a polygonal cylinder, or a polygonal cone, And the material of these protrusions is metal or ceramic.

According to an embodiment of the present invention, each of the above-mentioned through holes has a first opening and a second opening. The first opening is located in the top surface of the upper electrode. The second opening is located at the bottom of the corresponding protrusion. The caliber of the first opening is larger than the caliber of the second opening.

According to an embodiment of the present invention, the above-mentioned cleaning mechanism includes a plurality of protrusions protruding from the bottom surface of the upper electrode, and through holes are respectively formed in the protrusions, and the protrusions are configured to utilize a mechanical force. To remove the part of the second material and the part of the first material.

According to an embodiment of the present invention, the upper electrode is electrically connected to a power source, and the power source is a pulsed DC (pulsed DC) power supply, a medium frequency (MF) power supply, a radio frequency (RF) power supply, or a high frequency power supply. Power pulse power supply.

According to an embodiment of the present invention, the upper electrode is a rotatable electrode or a reciprocating electrode.

According to an embodiment of the present invention, the above-mentioned cleaning mechanism includes an ultrasonic vibrator disposed adjacent to the workpiece, and the ultrasonic vibrator is configured to perform ultrasonic vibration treatment on the workpiece during the etching process.

According to an embodiment of the present invention, the above-mentioned cleaning mechanism includes a rotating brush arranged in the reaction chamber, and the rotating brush is configured to perform a rotating brush removal process on the composite material of the workpiece.

According to an embodiment of the present invention, the above-mentioned cleaning mechanism includes a blowing nozzle adjacent to the workpiece, and the blowing nozzle is configured to blow off the composite material during the etching process.

100: Plasma etching equipment

100a: Plasma etching equipment

100b: Plasma etching equipment

100c: Plasma etching equipment

110: Workpiece

112: Composite materials

120: vacuum chamber

120a: vacuum chamber

122: reaction chamber

122a: reaction chamber

122a': Plasma treatment area

122a": Rotating brush cleaning area

124: Gas inlet

126: Gas outlet

127: Gas outlet

128: gas outlet

129: Gas outlet

130: Plasma device

130a: Plasma device

140: Upper electrode

142: Bottom

150: lower electrode

152: bearing surface

160: Clearing Organization

162: Convex

162a: bottom

170: Upper electrode

172: Bottom

174: Through hole

180: Upper electrode

182: Bottom

184: Through hole

184a: first opening

184a': Caliber

184b: second opening

184b': caliber

190: Upper electrode

192: Bottom

200: Ultrasonic Oscillator

210: Rotating brush

220: blowing nozzle

θ: Angle

μ: angle

In order to make the above and other objectives, features, advantages and embodiments of the present invention more comprehensible, the description of the accompanying drawings is as follows:

[FIG. 1] is a schematic diagram showing the apparatus of a plasma etching equipment according to the first embodiment of the present invention;

[Fig. 2] is a schematic diagram showing the bottom view of the upper electrode of a plasma device according to an embodiment of the present invention;

[Fig. 3] is a schematic diagram showing the bottom view of the upper electrode of another plasma device according to an embodiment of the present invention;

[FIG. 4] is a schematic partial cross-sectional view of another electrode on a plasma device according to an embodiment of the present invention;

[FIG. 5] is a schematic diagram showing a plasma etching equipment according to the second embodiment of the present invention;

[FIG. 6] is a schematic diagram of a plasma etching equipment according to the third embodiment of the present invention; and

[FIG. 7] is a schematic diagram of a plasma etching equipment according to the fourth embodiment of the present invention.

Please refer to FIG. 1, which is a schematic diagram of a plasma etching equipment according to the first embodiment of the present invention. The plasma etching apparatus 100 can etch the composite material 112 on the workpiece 110 during the etching process. Composite The material 112 may include at least two different materials, which are mixed with each other to form the composite material 112. For example, the composite material 112 may include a first material and a second material, where the first material may be polyoxy resin, and the second material may be silicon dioxide.

In some examples, the plasma etching apparatus 100 may mainly include a vacuum chamber 120, a plasma device 130, and a cleaning mechanism 160. The vacuum chamber 120 can be used for vacuum plasma processing of the workpiece 110, such as plasma etching, plasma cleaning, or plasma coating. The vacuum chamber 120 has a reaction chamber 122, at least one gas inlet 124, and at least one gas outlet, such as gas outlets 126 and 128. The gas inlet 124 and the gas outlets 126 and 128 are both in communication with the reaction chamber 122. Thereby, the plasma working gas and the carrier gas can enter the reaction chamber 122 through the gas inlet 124, and the gas products and unreacted working gas and carrier gas generated by the plasma processing can exit the reaction chamber 122 through the gas outlets 126 and 128. For example, the gas inlet 124 may be provided at the top of the vacuum chamber 120, and the gas outlets 126 and 128 may be provided at the bottom of the vacuum chamber 120.

The plasma device 130 is installed in the reaction chamber 122. The plasma device 130 can generate plasma to etch the composite material 112. In some examples, the plasma device 130 may mainly include an upper electrode 140 and a lower electrode 150, wherein the upper electrode 140 is disposed above the lower electrode 150. The upper electrode 140 is disposed in the reaction chamber 122 and may be adjacent to the gas inlet 124, for example. The upper electrode 140 includes a bottom surface 142. The lower electrode 150 is also disposed in the reaction chamber 122, and may be adjacent to the gas outlets 126 and 128, for example. The bottom electrode 150 includes a bearing surface 152. The carrying surface 152 is configured to carry the workpiece 110. Upper electrode 140 and lower electrode 150 They are opposite to each other, that is, the bottom surface 142 of the upper electrode 140 and the supporting surface 152 of the lower electrode 150 are opposite. The plasma device 130 can generate plasma between the upper electrode 140 and the lower electrode 150 to etch the workpiece 110 carried on the carrying surface 152.

In some examples, the plasma generated by the plasma device 130 has an etching selectivity for the first material and the second material in the composite material 112, that is, the plasma has a first etching rate and a first etching rate for the first material and the second material, respectively. The second etch rate, the first etch rate is different from the second etch rate. For example, the first etching rate is greater than the second etching rate, which means that the plasma is easier to etch the first material.

The cleaning device 160 is provided in the reaction chamber 122. The cleaning device 160 is configured to physically remove a part of the first material and a part of the second material of the composite material 112 during the etching process of the composite material 112. Since the plasma is easier to etch the first material, there are more parts of the second material to be removed, and the part of the second material removed by the cleaning device 160 is larger than the part of the first material. The removal by the cleaning device 160 can effectively prevent the second material of the composite material 112 from gradually accumulating during the plasma etching process and affecting the overall etching effect.

When part of the first material and part of the second material of the composite material 112 are physically removed, mechanical force in the form of contact can be used, or shock or wind force in the form of non-contact can be used. Please continue to refer to FIG. 1, the removing device 160 of this embodiment uses mechanical force to remove part of the composite material 112. The cleaning mechanism 160 includes a plurality of protrusions 162. The protrusions 162 protrude from the bottom surface 142 of the upper electrode 140. These bumps 162 can Mechanical forces such as grinding or scraping are used to quickly and effectively remove part of the second material and part of the first material of the composite material 112. In some examples, the upper electrode 140 is a rotatable electrode or a reciprocating electrode, whereby the protrusion 162 can be driven to grind or scrape part of the second material and part of the first material.

In some examples, the bottom 162a of the protrusions 162 is hard and grindable. Therefore, the upper electrode 140 can be rotated or moved back and forth to allow the protrusions 162 to grind or scrape off the second material that is difficult to etch by the plasma. The protrusion 162 may be, for example, a cylinder, a cone, a needle, a polygonal cylinder, or a polygonal cone. These protrusions 162 may have the same structure and size, the same structure but different sizes, or the same structure but part of the same size and another part of the same size. Of course, the protrusions 162 may also have different structures, or some of the protrusions 162 may have the same structure and another part have a different structure. In some exemplary examples, the protrusions 162 are resistant to plasma and hard, and the material of the protrusions 162 may be, for example, metal or ceramic.

In addition, the protrusions 162 can be arranged regularly or irregularly on the bottom surface 142 of the upper electrode 140. Please refer to FIG. 2, which is a schematic bottom view of an upper electrode of a plasma device according to an embodiment of the present invention. The distribution of the protrusions 162 on the bottom surface 142 may be in the form of an array as shown in FIG. 2. The protrusions 162 can also be arranged on the bottom surface 142 in a radial manner, or arranged on the bottom surface 142 in other forms that can improve the uniformity of the abrasion.

The upper electrode 140 may be grounded, or may be electrically connected to a power source. When the upper electrode 140 is connected to a power source, in addition to strengthening the electric field of the upper electrode 140, the front end of the protrusion 162 on the bottom surface 142 of the upper electrode 140 will form a sharp discharge, which can increase the dissociation effect of the plasma near the protrusion 162 ,and then Can improve the plasma strength. The power source connected to the upper electrode 140 can be a high current and low voltage power source, so that the protrusion 162 can generate a higher density plasma when the tip is discharged. For example, the power source connected to the upper electrode 140 may be a pulsed DC power source, an intermediate frequency power source, a radio frequency power source, or a high-power pulse power source.

The cleaning mechanism 160 can be used to remove the second material in the composite material 112 that is difficult to remove by plasma, so that the plasma can continue to react with the first material in the composite material 112 that is easier to etch, thereby improving the etching of the composite material 112 Effect and etching rate. In addition, the plasma etching of the composite material 112 and the removal of materials that are difficult to plasma etching are both performed in the reaction chamber 122 of the vacuum chamber 120. Therefore, there is no need to perform the plasma etching process after the cleaning process is completed. The 122 vacuum treatment can greatly reduce the process time and cost.

Please refer to FIG. 3, which is a schematic bottom view of the upper electrode of another plasma device according to an embodiment of the present invention. The structure of the upper electrode 170 is substantially the same as the structure of the upper electrode 140 in the above-mentioned embodiment. The difference between the two is that the upper electrode 170 is further provided with many through holes 174. These through holes 174 penetrate the upper electrode 170 from top to bottom, so that the upper electrode 170 has the form of a baffle plate. These through holes 174 can improve the flow field. When the working gas passes through the upper electrode 170, it can achieve a uniform diversion effect through the through hole 174, thereby improving the uniformity of the plasma distribution, and further improving the uniformity of the plasma etching of the composite material.

The distribution of these through holes 174 may be in the form of an array, as shown in FIG. 3. The through holes 174 may also be provided in the upper electrode 170 in a radial form, or provided in the upper electrode 170 in other forms of uniformity of the flow field. In some cases In this case, as shown in FIG. 3, these through holes 174 are interspersed and distributed between the protrusions 162.

Of course, the through hole of the upper electrode can also be combined with the protrusion. Please refer to FIG. 4, which is a schematic partial cross-sectional view of another electrode on a plasma device according to an embodiment of the present invention. The structure of the upper electrode 180 is substantially the same as the structure of the upper electrode 170 in the above embodiment. The difference between the two is that the through hole 184 of the upper electrode 180 not only penetrates the upper electrode 180, but also penetrates the bottom surface of the upper electrode 180 respectively. 182 of the convex 162.

Each through hole 184 has a first opening 184a and a second opening 184b opposite to each other. The first opening 184 a is located in the top surface 186 of the upper electrode 180. The second opening 184b is located at the bottom 162a of the corresponding protrusion 162. The aperture of each through hole 184 can be fixed, that is, the aperture 184a' of the first opening 184a is the same as the aperture 184b' of the second opening 184b. In some examples, the aperture of each through hole 184 may be non-uniform, that is, the aperture 184a' of the first opening 184a is different from the aperture 184b' of the second opening 184b. In some exemplary examples, the diameter 184a' of the first opening 184a of each through hole 184 is larger than the diameter 184b' of the second opening 184b, so that the protrusion 162 can function as a nozzle. 1 and 4, when the process gas enters from the first opening 184a of the through hole 184 and passes through the protrusions 162, it will be compressed and accelerated to the lower electrode 150, so that a local high concentration can be formed more quickly Plasma can allow the reactants in the plasma to reach the surface of the composite material 118 of the workpiece 110 more quickly, so the etching rate can be greatly increased.

In some cases, it can be designed so that the inlet pressure of the through hole is greater than the outlet pressure of the through hole. Orifice pressure to further enhance the effect of the protrusion 162 in accelerating the process gas. 1 and 4, the inlet pressure of the through hole is the vacuum pressure between the top of the vacuum chamber 120 and the upper electrode 180, and the outlet pressure of the through hole is the vacuum pressure between the upper electrode 180 and the lower electrode 150.

Please refer to FIG. 5, which is a schematic diagram of a plasma etching equipment according to the second embodiment of the present invention. The structure of the plasma etching equipment 100a is roughly the same as the structure of the plasma etching equipment 100 shown in FIG. The bottom surface 192 of the upper electrode 190 is not provided with protrusions.

In the plasma etching equipment 100 a, the ultrasonic oscillator 200 is disposed in the reaction chamber 122 and adjacent to the workpiece 110 to be etched carried by the lower electrode 150. In some exemplary examples, an angle θ between the ultrasonic oscillator 200 and the workpiece 110 is made. The ultrasonic oscillator 200 can simultaneously perform ultrasonic vibration processing on the workpiece 110 during the plasma etching process of the composite material 112 of the workpiece 110 to remove the second material that is difficult to etch in the composite material 112 through ultrasonic vibration. Ultrasonic vibration may also remove part of the first material in the composite material 122.

Please refer to FIG. 6, which is a schematic diagram of a plasma etching equipment according to the third embodiment of the present invention. The structure of the plasma etching equipment 100b is roughly the same as the structure of the plasma etching equipment 100a shown in FIG. In addition, the volume of the vacuum chamber 120a is increased to facilitate the movement of the lower electrode 150 in the reaction chamber 122a.

In the plasma etching equipment 100b, the vacuum chamber 120a is lengthened, and the reaction chamber 122a is designed to define the plasma processing area 122a' and the rotating brush removal area 122a". The lengthened vacuum chamber 120a can be additionally provided with gas according to requirements Outlets 127 and 129. The plasma device 130a is installed in the plasma treatment zone 122a' of the reaction chamber 122a, and the rotating brush 210 is installed in the rotating brush cleaning zone 122a". In addition, a transmission mechanism can be used to drive the lower electrode 150, so that the lower electrode 150 can move between the plasma processing area 122a' and the rotating brush cleaning area 122a".

The rotating brush 210 is configured to perform a rotating brush removal process on the composite material 112 of the workpiece 110, thereby removing part of the composite material 112, especially the second material that is difficult to etch by plasma. The rotating brush 210 may be installed on a motor, so that the rotating brush 210 can be driven to rotate by the motor to remove materials that are difficult to etch in the composite material 112. For example, the bristles of the rotating brush may be made of Teflon or the like. During the etching process, when it is necessary to rotate the brush 210 to remove the materials that are difficult to etch by plasma in the composite material 112, the lower electrode 150 is moved under the rotating brush 210 in the rotating brush area 122a" by the transmission mechanism. , The rotating brush 210 is driven to move down to the composite material 112 on the workpiece 110, and the rotating brush 210 is driven to rotate, so as to remove the materials that are difficult to plasma etch on the composite material 112 by means of rotating brushes. The removal process comes to an end. After that, the transmission mechanism is used to move the lower electrode 150 back to the plasma processing area 122a', and the plasma device 130a is used to continue the plasma etching process on the composite material 112.

Please refer to FIG. 7, which is a schematic diagram of a plasma etching equipment according to the fourth embodiment of the present invention. Plasma etching equipment 100c The structure of is substantially the same as that of the plasma etching apparatus 100a shown in FIG.

In the plasma etching apparatus 100c, the blowing nozzle 220 is provided in the reaction chamber 122 and adjacent to the workpiece 110 to be etched carried by the lower electrode 150. In some exemplary examples, the angle μ between the blowing nozzle 220 and the workpiece 110 is made. The blowing nozzle 220 can simultaneously blow off the workpiece 110 during the plasma etching process of the composite material 112 of the workpiece 110, so as to blow off part of the composite material 112 through the strong air flow, especially the more difficult to etch in the composite material 112 The second material. The blowing gas used by the blowing nozzle 220 can be, for example, a gas such as nitrogen (N ₂ ).

It can be seen from the above-mentioned embodiments that one of the advantages of the present invention is that because the plasma etching equipment includes a cleaning mechanism, it can remove materials that are difficult to remove by the plasma device in the composite material, so that the plasma can continue to go down and the composite material can be etched more easily. The material response of the composite material can improve the etching rate and uniformity of the composite material.

As can be seen from the above-mentioned embodiments, another advantage of the present invention is that because the upper electrode of the plasma device of the plasma etching equipment can be a deflector structure with multiple through holes, the flow field can be improved, and the etching performance can be improved. Uniformity.

As can be seen from the above-mentioned embodiments, another advantage of the present invention is that the cleaning device of the plasma etching equipment includes a lot of protrusions provided on the bottom surface of the electrode on the plasma device, and the through hole of the upper electrode can be penetrated through these correspondingly. In the protrusion, the inlet diameter of the through hole is made larger than the outlet diameter, so that the local high-concentration plasma can be formed more quickly. Therefore, the reactants in the plasma can reach To reach the workpiece, the composite material on the workpiece is quickly etched, thereby greatly increasing the etching rate.

It can be seen from the above-mentioned embodiments that another advantage of the present invention is due to The upper electrode of the plasma etching equipment can be connected to electricity, so that the front end of the protrusion on the bottom surface of the upper electrode can form a sharp discharge, so that the dissociation effect of the plasma near the protrusion can be increased, and the strength of the plasma can be improved.

It can be seen from the above-mentioned embodiments that another advantage of the present invention is that the plasma etching equipment can perform plasma etching of composite materials and the removal of materials that are difficult to be etched by plasma in composite materials in a vacuum environment. Therefore, when the subsequent plasma etching process is removed, there is no need to vacuum the reaction chamber, and the plasma etching process time can be greatly reduced.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to those defined by the attached patent application scope.

100: Plasma etching equipment

110: Workpiece

112: Composite materials

120: vacuum chamber

122: reaction chamber

124: Gas inlet

126: Gas outlet

128: gas outlet

130: Plasma device

140: Upper electrode

142: Bottom

150: lower electrode

152: bearing surface

160: Clearing Organization

162: Convex

162a: bottom

Claims (12)

A plasma etching equipment is suitable for etching a composite material on a workpiece during an etching process, wherein the composite material includes a first material and a second material mixed with each other, and the plasma etching equipment includes: a vacuum chamber The body has a reaction chamber, and at least one gas inlet and at least one gas outlet communicating with the reaction chamber; a plasma device is arranged in the reaction chamber and is configured to generate a plasma to etch the composite material, wherein The plasma has a first etching rate and a second etching rate for the first material and the second material, respectively, the first etching rate is greater than the second etching rate, so that the composite material after the plasma etching The part of the second material to be removed is more than the part of the first material to be removed; and a cleaning mechanism is provided in the reaction chamber and is configured to physically move during the etching process. In addition to the part of the second material and part of the first material in the composite material after the plasma etching, wherein the part of the second material is larger than the part of the first material, the physical method includes a mechanical force method , A shock method, or a blow-off method. The plasma etching equipment according to claim 1, wherein the plasma device comprises: an upper electrode arranged in the reaction chamber and adjacent to the at least one gas inlet; and a lower electrode arranged in the reaction chamber and adjacent to the at least one gas inlet At least one gas outlet, wherein the lower electrode includes a bearing surface opposite to the upper electrode, and the bearing surface is configured Set to carry the workpiece. The plasma etching device according to claim 2, wherein the upper electrode has a plurality of through holes penetrated in the upper electrode. The plasma etching device according to claim 2, wherein the cleaning mechanism includes a plurality of protrusions protruding on a bottom surface of the upper electrode, and the protrusions are configured to use the mechanical force to remove the second The part of the material and the part of the first material. The plasma etching equipment according to claim 4, wherein each of the protrusions is a cylinder, a cone, a needle, a polygonal cylinder, or a polygonal cone, and the protrusions are The material of the object is metal or ceramic. The plasma etching device according to claim 4, wherein the upper electrode has a plurality of through holes passing through the upper electrode, and each of the through holes has: a first opening located on a top surface of the upper electrode And a second opening located at the bottom of a corresponding protrusion, wherein a diameter of the first opening is larger than a diameter of the second opening. The plasma etching equipment according to claim 3, wherein the cleaning mechanism includes a plurality of protrusions protruding on a bottom surface of the upper electrode, and The through holes respectively penetrate through the protrusions, and the protrusions are configured to use the mechanical force to remove the part of the second material and the part of the first material. The plasma etching equipment according to claim 2, wherein the upper electrode is electrically connected to a power source, and the power source is a pulsed direct current power source, an intermediate frequency power source, a radio frequency power source, or a high-power pulse power source. The plasma etching equipment according to claim 2, wherein the upper electrode is a rotatable electrode or a reciprocating electrode. The plasma etching equipment according to claim 1, wherein the cleaning mechanism includes an ultrasonic oscillator adjacent to the workpiece, and the ultrasonic oscillator is configured to perform an ultrasonic oscillation treatment on the workpiece during the etching process, The part of the second material and the part of the first material are removed by using the vibration method. The plasma etching equipment according to claim 1, wherein the cleaning mechanism includes a rotating brush arranged in the reaction chamber, and the rotating brush is configured to perform a rotating brushing treatment on the composite material of the workpiece, thereby using The mechanical force means to remove the part of the second material and the part of the first material. The plasma etching equipment according to claim 1, wherein the The cleaning mechanism includes a blowing nozzle adjacent to the workpiece, the blowing nozzle being configured to perform a blowing process on the composite material during the etching process, so as to use the blowing method to remove the part of the second material And the part of the first material.

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