KR101840294B1 - Ccp plasma device - Google Patents

Abstract

The present invention provides a capacitively coupled plasma (CCP) device capable of uniformly etching or depositing a substrate through a plasma process and processing contaminants remaining on the substrate when processing plasma. The CCP device of the present invention comprises: a chamber in which the substrate is received; an electrode plate installed in an upper part in the chamber; a substrate holder which is installed in a lower part in the chamber, and in which the substrate is placed; a power part supplying high frequency power to at least one of the electrode plate and the substrate holder so that CCP is generated between the electrode plate and the substrate holder; and a rotation shaft to be used as a rotation center of the electrode plate. When the high frequency power is supplied from the power part to the electrode plate or the substrate holder, the electrode plate can rotate 360 degrees or more around the rotation shaft in the chamber.

Description

[0001] CCP PLASMA DEVICE [0002]

The present invention relates to an apparatus for plasma processing a substrate such as a substrate.

In the surface treatment technology for forming a fine pattern on the surface of a wafer used for a semiconductor or a glass substrate used for an LCD, a technique of generating a plasma is improved in relation to a fine circuit line width in a semiconductor, In the field of LCD using substrates, research and development of plasma generation sources have been carried out according to their sizes.

As a representative method of a plasma source used in semiconductor wafer processing technology, a capacitive coupling plasma (CCP), which is a parallel plate type plasma process, and an inductive coupling plasma (ICP) induced by an antenna coil, . The former has been developed by Japan's TEL (Tokyo electron) and the US LRC (Lam Research), and the latter has been developed and applied by American AMT (Applied Materials) and LRC.

A substrate can be uniformly etched or deposited through a plasma treatment, and means for treating contaminants remaining on the substrate during such plasma treatment are needed.

Korean Patent Registration No. 0324792 discloses a technique of applying modulation by low-frequency power to high-frequency power, but measures against the contaminants remaining on the substrate are not shown.

Korean Patent Registration No. 0324792

An object of the present invention is to provide a CCP plasma apparatus capable of uniformly etching or depositing a substrate through a plasma treatment and treating contaminants remaining on the substrate during plasma processing.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise forms disclosed. Other objects, which will be apparent to those skilled in the art, It will be possible.

A CCP plasma apparatus of the present invention includes: a chamber provided with a plasma generating space; A plate-like shower head installed at an upper portion of the chamber; A plate-shaped substrate holder installed at a lower portion of the chamber and on which a substrate is placed; A power unit for supplying high frequency electric power to the showerhead; And a rotating shaft installed on the upper side of the chamber and tilted to the substrate holder. The showerhead is connected to the rotating shaft and rotates together with the rotating shaft to generate a pulsed plasma.

The CCP plasma apparatus of the present invention can form a plasma by capacity coupling formed between two plates facing each other.

The CCP plasma apparatus of the present invention can rotate the electrode plate about the rotation axis so that the capacitive coupling formed between the electrode plate corresponding to the two plates and the substrate holder is evenly distributed over the substrate.

The electromagnetic field or the amount of charge formed between the two plates also rotates in the course of the rotation of the electrode plate and the pumping operation in which the contaminants such as particles accumulated in the minute engraving pattern of the substrate are separated from the substrate by the rotation moment of the electromagnetic field or electric charge is smoothly performed . In addition, the entire surface area of the substrate can be plasma treated (etched, cleaned, deposited) by a rotating electromagnetic field or electric charge.

In particular, the electrode plate of the present invention generates a pulsed plasma while rotating about the rotation axis, thereby maximizing the pumping operation and assuring plasma processing of the substrate through the maximized pumping operation.

Pulse of the plasma can be mechanically realized by rotation of the electrode plate alternately provided with the electrode portion and the insulating portion along the rotation direction. Due to the mechanical pulsation, the plasma can be surely pulsed and the lifetime of the plasma device can be maximized. Such an effect can also be achieved by eliminating the insulating portion and forming the electrode portion in a wing shape extending radially from the rotation axis. Since a separate insulating part is excluded, waste of resources is prevented and productivity is improved.

When a plurality of wing-like electrode portions are provided, the lengths of the electrode portions may be formed differently, and the pulsed plasma may be applied at different intervals for each region of the substrate.

The CCP plasma apparatus of the present invention includes a link electrode facing the rotation axis, and a terminal portion electrically connected to the electrode plate may be formed only in a part of the angular section of the rotation axis. When the rotating shaft rotates, electrical contact between the terminal portion and the link electrode is made in a pulsed form, so that a pulsed plasma can be generated.

When the electrode plate and the substrate holder are formed as flat plates parallel to each other, the plasma density applied to each region of the substrate holder may be different from each other. For example, the center portion of the substrate holder can be machined differently from the edge portion. One surface of the electrode plate facing the substrate holder may be formed in a curved shape so that the entire area of the substrate holder or the entire area of the substrate is processed evenly.

A gas plate through which the process gas is discharged may be provided. The gas plate can be rotated together with the electrode plate. Due to the rotating gas plate, the process gas can be evenly distributed in the chamber, and a uniform machining state can be obtained over the entire surface of the substrate to improve the semiconductor yield.

1 is a schematic view showing a CCP plasma apparatus of the present invention.
2 is a schematic view showing the state of a substrate processed by a plasma process.
3 is a schematic diagram showing the waveform of the pulsed high frequency power.
4 is a schematic view showing the electrode plate of the present invention.
5 is a schematic view showing another electrode plate of the present invention.
6 is a schematic view showing another electrode plate of the present invention.
7 is a schematic view showing a rotation axis and a link electrode of the present invention.
8 is a schematic view showing an electrode plate formed of a curved surface.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience. In addition, terms defined in consideration of the configuration and operation of the present invention may be changed according to the intention or custom of the user, the operator. Definitions of these terms should be based on the content of this specification.

1 is a schematic view showing a CCP plasma apparatus of the present invention. 1 shows a cross-sectional view of a CCP plasma apparatus.

The CCP plasma apparatus shown in FIG. 1 may include a chamber 110, an electrode plate 130, a substrate holder 160, a power unit 170, and a rotating shaft 190.

In the chamber 110, a substrate 10 is accommodated, and a plasma generating space for etching, cleaning, or depositing the substrate 10 may be provided.

The electrode plate 130 is installed on the upper part of the chamber 110 and may be formed in a plate shape.

The substrate holder 160 is installed in a lower portion of the chamber 110 and may be formed in a plate shape on which the substrate 10 is placed.

The electric power unit 170 applies a high frequency power to at least one of the electrode plate 130 and the substrate holder 160 so that a CCP plasma (Capacitively Coupled Plasma) is generated between the electrode plate 130 and the substrate holder 160. [ Power can be supplied.

A charge amount Q may be formed between the electrode plate 130 and the substrate holder 160 as shown in Equation (1). Plasma can be generated by the amount of charge Q between the electrode plate 130 and the substrate holder 160 or by the electromagnetic field between the electrode plate 130 and the substrate holder 160.

Here, C is the capacitance and V is the potential difference between the electrode plate 130 and the substrate holder 160.

The rotating shaft 190 may be the center of rotation of the electrode plate 130. The rotary shaft 190 may be installed through the chamber 110 on the upper side of the chamber 110.

When the high frequency power is supplied from the power unit 170 to the electrode plate 130 or the substrate holder 160, the electrode plate 130 can rotate 360 degrees or more around the rotation axis 190 in the chamber 110 have.

The plasma density is uniformly distributed between the electrode plate 130 and the substrate holder 160 in an ideal situation since the electrode plate 130 and the substrate holder 160 forming the CCP plasma are formed in parallel to each other have. However, in reality, it is difficult to form the electrode plate 130 and the substrate holder 160 in a completely parallel manner. Accordingly, a difference in density of plasma applied to each region of the substrate 10 housed in the chamber 110 may occur.

According to the conventional CCP apparatus, the electrode is fixed to the chamber without rotating. Even though it is intended to produce a uniform plasma over the entire area of the electrode in the initial design, the plasma density may become uneven due to the influence of the environmental variables when the use time has elapsed. No means is provided to control the non-uniformity over time.

The electrode plate 130 of the present invention is rotated in a plane over 360 degrees about the rotation axis 190 formed at the center or the like of the substrate holder 160 so that the electrode plate 130 is rotated along the rotation direction or the circumferential direction of the electrode plate 130 The plasma density can be uniformly controlled or controlled to be a desired profile. Therefore, uniform processing conditions for the entire area of the substrate 10 can be obtained not only during the initial designing of the electrode plate 130, but also over a period of time in which environmental variables fluctuate.

According to the conventional CCP apparatus, since the electrode is fixed, the rotation moment of the plasma does not occur. On the other hand, according to the present invention, since the electrode is rotated, the plasma is subjected to the force of rotation.

That is, a rotation moment may be applied to the electromagnetic field or charge between the electrode plate 130 and the substrate holder 160 by the rotation of the electrode plate 130. A rotation moment can also be imparted to the plasma generated in the chamber 110 by the electromagnetic field or the amount of charge imparted with the rotation moment. A uniform machining state with respect to the entire area of the substrate 10 can be obtained not only at the time of initial designing of the electrode plate 130 but also at the time when the environmental variable fluctuates with the plasma imparted with the rotation moment.

According to the embodiment of Fig. 1 in which the electrode plate 130 rotates, since the force hitting the plasma by the plasma hits the substrate 10 by the rotation moment, the plasma processing of the substrate 10 can be performed more reliably. In addition, various contaminants such as particles remaining on the surface of the substrate 10 can be easily wiped off.

In addition to this, an embodiment of performing a " pumping process ", which is a process or an operation of removing various contaminants such as particles remaining on the surface of the substrate 10 from the substrate 10 will be described with reference to FIG.

2 is a schematic view showing the state of the substrate 10 processed by the plasma process. 2, an etching process for etching the surface of the substrate 10 is described.

A plasma process may be performed to form a fine groove 11 having a depth h1 on the surface of the substrate 10 such as the substrate 10 as shown in FIG.

When the plasma generated in the electrode plate 130 hits the substrate 10, fine grooves 11 having a depth h2 lower than h1 may be formed on the surface of the substrate 10 as shown in FIG. 2 (b).

In this state, when the plasma process is continuously performed, a fine groove 11 having a depth of h1 should be formed, but the reality is not so. This is because the particles falling off the substrate 10 due to impurities or etching in the chamber 110 cover the fine grooves 11.

Even if the plasma hits the fine grooves 11 covered with the particles, it is difficult to further etch the substrate 10 because the particles receive the hit. Therefore, it may be difficult to obtain the result as shown in FIG. 2 (d) having the micro-grooves 11 of the initial intended depth h1.

In order to form the fine grooves 11 having the depth h1, impurities such as particles covering the fine grooves 11 should be removed from the fine grooves 11 as shown in FIG. 2 (c). This process may be a pumping process.

Convection can be used for the pumping process.

Temperature imbalance may occur in the chamber 110 where the plasma process is performed.

For example, the temperature of one side of the chamber 110 where the electrode plate 130 is located may be higher than the temperature of the other side. Due to such a temperature difference, a convection phenomenon may occur in the chamber 110.

However, since the plasma moves from the electrode plate 130 toward the substrate 10 with a force larger than the convection phenomenon, the particles mentioned in Fig. 2 are difficult to be pumped by the convection phenomenon.

Therefore, in order to pump the particles by the convection phenomenon or the like, generation of the plasma must be stopped. When the generation of the plasma is stopped, the particles that have covered the substrate 10 due to the convection phenomenon occurring in the chamber 110 can escape to the outside of the substrate 10 as shown in FIG. 2 (c).

When the plasma processing is performed on the substrate 10 again with the particles removed by the pumping process, the initially designed fine grooves 11 having a depth of h1 can be formed on the substrate 10.

In summary, in the case where the pumping process is not applied, the substrate 10 to be plasma-processed can be processed after transition from the state (a) to the state (b) of FIG. That is, an output different from the initial design value can be obtained.

Alternatively, if the plasma treatment and the pumping treatment are alternately performed, the states (a), (b), (c), and (d) of FIG. This results in obtaining results that match the initial design.

The plasma may be pulsed so that the plasma treatment and the pumping treatment alternate. Pulsed plasma means that generation and interruption of the plasma are made alternately.

Pulsed plasma may be generated between the electrode plate 130 and the substrate holder 160 when the electrode plate 130 rotates. The high frequency power applied to the electrode plate 130 or the substrate holder 160 for pulsing the plasma may be pulsed.

The pulsing of the high-frequency power can be performed by periodic on-off of the power section 170 or by combining pulse waves with high-frequency power.

FIG. 3 shows an embodiment in which a rotation moment is imparted to the plasma by the rotation of the electrode plate 130, and high-frequency power is adjusted in order to add a pumping effect thereto.

3 is a schematic diagram showing the waveform of the pulsed high frequency power.

The high-frequency power? Applied to the electrode plate 130 may have a continuous waveform. (1) is applied to the electrode plate 130 as it is, the plasma treatment can be continuously performed. As a result, the pumping process is not performed, so that the processing result in the state (b) of FIG. 2 will be obtained.

Pulse of the high-frequency power (1) may be produced by processing (1) such that (1) is outputted as it is in a specific section and (1) is not outputted in another specific section.

For example, the high-frequency power (1) can be pulsed by multiplying, ANDing, or filtering the pulse signal (2) with the high-frequency power (1). The high-frequency power (1) can be pulsed by alternately turning on and off the power section (170) outputting the high-frequency power (1) according to the set period.

From the pulsed result, it can be seen that ① is outputted as it is in the specific period (a), and ① is not outputted in the other specific period (c).

According to such a configuration, plasma is generated and applied to the substrate 10 in the specific section (a), plasma generation is suppressed in the specific section (c), and the plasma is not applied to the substrate 10. As a result, the pumping process can be performed in the specific period (c).

The pulsing of the high-frequency power may be performed through a circuit element that synthesizes the pulse signal or turns on and off the power unit 170. [

However, since a failure tends to occur due to the characteristics of the circuit element, another scheme for pulsing needs to be provided.

It is possible to eliminate a circuit element for pulsing high-frequency power and provide a mechanism capable of manifesting the same effect mechanically. This embodiment is illustrated in FIG. 4 and below.

For example, as shown in FIG. 3, even if a high frequency power having a predetermined waveform is applied, the electrode plate 130 and the substrate holder 130 are rotated by the electrode plate 130, A pulsed plasma may be generated between the plasma display panel 160 and the plasma display panel.

4 is a schematic view showing the electrode plate 130 of the present invention.

The electrode plate 130 may be provided with an electrode unit 210 through which high-frequency power flows and an insulation unit 230 through which the high-frequency power is blocked alternately along the rotation direction.

Plasma is generated in a region facing the electrode unit 210 in the substrate holder 160 or the substrate 10 and plasma generation can be suppressed in a region facing the insulating portion 230.

The electrode portion 210 and the insulating portion 230 can alternately pass through the points that are confronted with the substrate holder 160 or a specific region of the substrate 10 by the rotation of the electrode plate 130. At this time, the specific region is plasma-processed when the electrode portion 210 passes, and can be pumped when the insulating portion 230 passes. Plasma processing and pumping processing can be alternated by rotation of the electrode plate 130.

The insulating portion 230 may include an insulator to which the high-frequency power of the power portion 170 is interrupted, or may include a hole in which the electrode plate 130 is partially cut.

Plasma is generated only in a region facing the surface electrode portion 210 on which the electrode plate 130 of the present embodiment is fixed and generation of plasma is suppressed in the region facing the insulating portion 230, The processing can be performed non-uniformly. However, since the electrode plate 130 of the present invention rotates around the rotation axis 190, a plasma can be uniformly generated over the entire area facing the electrode plate 130.

FIG. 5 shows an embodiment in which the pumping effect can be added even without the insulating portion 230 in addition to the embodiment of FIG. As shown in FIG. 5, when the same high frequency power is applied to the electrode unit 210 having the same shape, pulsed plasma formation may be possible.

On the other hand, according to Fig. 5, a radial direction control means is also possible. If a high-frequency power having a different period or different magnitude is applied to each electrode unit 210 having the same shape, the density of the plasma or the period of the pulsed plasma along the radial direction can be controlled. Therefore, it is possible to uniformly process the substrate 10 in the radial direction.

5 is a schematic view showing another electrode plate 130 of the present invention.

Since the separate insulating portion 230 is excluded, the plasma can be generated because the RF power is efficiently applied only in the area where the resource is wasted and only the optimal productivity is maintained. Thus, the plasma per unit area or unit volume can be optimized.

The electrode plate 130 may include a plate-shaped electrode part 210 extending along the radial direction of the rotating shaft 190 and applied with a high frequency power. One or more electrode units 210 may be provided, and the plurality of electrode units 210 may be disposed at different angles with respect to the rotation axis 190. At this time, the extension length L of each electrode unit 210 may be all the same.

Plasma can be generated in a region facing the electrode unit 210 in the substrate holder 160.

The electrode unit 210 may be formed to face the specific region of the substrate holder 160 at a predetermined rotation angle of the rotation shaft 190 and rotate about the rotation axis 190.

According to the embodiment of FIGS. 4 and 5, a pulsed plasma of a constant period can be applied to the entire region of the substrate 10. [0052] FIG.

Meanwhile, pulsed plasmas having different periods may be required to be applied to the substrate holder 160 or the region of the substrate 10. That is, one embodiment of radial control means that can radially control the plasma density or pulse and plasma period applied to the center and edge of the substrate 10 is shown in FIG. According to this, a scheme for applying pulsed plasmas having different periods to each region may be provided.

6 is a schematic view showing another electrode plate 130 of the present invention.

In one example, it may be necessary to apply a pulsed plasma of a fast period to the central region of the substrate holder 160 and apply a slow pulsed plasma to the edge region of the substrate holder 160.

The processing state of the substrate 10 can be changed from time to time according to various environmental variables such as the type of the substrate 10, the temperature in the chamber 110, the gas injection state in the chamber 110, and the degree of vacuum in the chamber 110. If the plasma density or charge amount is controlled in the circumferential direction, the radial direction, and the height direction, the substrate 10, which is the final product, can be uniformly processed in the circumferential direction and the radial direction even if the environmental variable is varied.

It is possible to uniformly process the substrate 10 in the circumferential direction and in the radial direction while canceling the change of the environmental variable if the plasma density or the amount of charge can be controlled in the circumferential direction or the radial direction in accordance with the change of various environmental variables. As a result, semiconductor yield is improved.

For example, the configuration in which the electrode plate 130 is rotated in the circumferential direction can be a circumferential control means for controlling the plasma density in the circumferential direction.

However, it may be difficult to control the plasma density in the radial direction only by the circumferential direction control means. For example, according to FIG. 5 or 6, it may be a radial direction control means for controlling the plasma density or the period in the radial direction.

For example, when the configuration of FIG. 1 in which the electrode plate 130 rotates is combined with the configuration of FIG. 6 in which the lengths of the electrode portions 210 are different from each other, the plasma density can be controlled in the circumferential direction and the radial direction, And the processing state of the substrate can be made uniform in the circumferential direction and the radial direction corresponding to the two coordinate axes of the cylindrical coordinate system.

Due to the difference between the extension lengths L1 and L2 in FIG. 6, the region of the first trace a drawn by the first electrode unit 211 is pulsed by the first electrode unit 211 and the second electrode unit 212 .

The electrode plate 130 may include a first electrode unit 211 and a second electrode unit 212 to which high frequency power is applied to apply a pulsed plasma having different frequencies or different frequencies to each region.

The first electrode unit 211 and the second electrode unit 212 may have different shapes and may be disposed at different angles with respect to the rotation axis 190. The first electrode unit 211 and the second electrode unit 212 may have different extension lengths from the rotation axis 190.

For example, the extension length L1 of the first electrode unit 211 may be shorter than the extension length L2 of the second electrode unit 212. [

On the other hand, due to the difference between the extension lengths L1 and L2, the area of the first trace a drawn by the first electrode unit 211 is set such that the plasma is pulsed by the first electrode unit 211 and the second electrode unit 212 . Since the pulse is formed by the two electrode units 210 arranged at different angles, the period of the pulsed plasma can be accelerated.

On the other hand, the region of the trace b 'drawn by the second electrode unit 212 can be plasma-pulsed only by the second electrode unit 212. Since the pulse is formed by one electrode unit 210, the period of the pulsed plasma can be slowed down.

The region of the first trajectory a is divided into a first electrode portion 211, a second electrode portion 212 and a third electrode portion 213. The third electrode portion 213 has a longer extension length L3 than the first electrode portion 211, The plasma can be pulsed. The plasma may be pulsed by the second electrode portion 212 and the third electrode portion 213 in the region of the second locus b. The plasma can be pulsed only by the third electrode portion 213 in the region of the third locus cura drawn by the third electrode portion 213. [ Thus, the period of the pulsed plasma is the fastest in the a, the middle, and the slowest in the c region.

Meanwhile, when the rotating shaft 190 rotates together with the electrode plate 130, the plasma may be pulsed using the rotating shaft 190.

7 is a schematic view showing the rotating shaft 190 and the link electrode 171 of the present invention.

The high frequency power output from the power unit 170 may be applied to the electrode plate 130 through the rotating shaft 190, which is installed on the upper side of the chamber 110.

A link electrode 171 may be provided facing the outer circumferential surface of the rotary shaft 190 and electrically connected to the power unit 170. The link electrode 171 may be provided outside the chamber 110.

A terminal portion 191 electrically connected to the electrode plate 130 and a blocking portion 193 electrically isolated from the electrode plate 130 may be alternately provided on the outer circumferential surface of the rotation shaft 190 facing the link electrode 171 have.

The terminal portion 191 and the blocking portion 193 can be alternately faced to the link electrode 171 by the rotation of the rotating shaft 190.

The high frequency power can be applied to the electrode plate 130 through the terminal portion 191 and the rotary shaft 190 in order. When the blocking portion 193 faces the link electrode 171, the high frequency power applied to the electrode plate 130 can be cut off.

Plasma can be pulsed by applying and blocking alternating high frequency power.

The plasma density applied to the substrate 10 in each region by the size and shape of the plasma generating space in the chamber 110, the size and shape of the electrode plate 130, the size and shape of the substrate holder 160, Or in the radial direction.

For example, in a particular chamber 110, the plasma density at the center portion of the substrate 10 may be high and the plasma density at the edge portions may be low. In the other chamber 110, the plasma density at the center portion of the substrate 10 may be low and the plasma density at the edge portion may be high. Environmental variables that differ in plasma density depending on the region of the substrate 10 or the state of the chamber 110 can be canceled by the circumferential control means or the radial control means of the present invention. Therefore, the substrate 10 can be uniformly processed.

8 is a schematic view showing an electrode plate 130 formed of a curved surface.

When the electrode plate 130 and the substrate holder 160 are formed as flat plates parallel to each other, the plasma density applied to each region of the substrate holder 160 may be different from each other. In one example, the plasma density generated in the central region of the substrate holder 160 in the edge region of the substrate holder 160 may be different because of the plasma sheath in the edge region, Which means that the center and edge regions of the deposited substrate are different. One surface of the rotating upper electrode plate 130 facing the substrate holder 160 may be formed in a curved shape so that the entire surface area of the substrate on the substrate holder 160 is uniformly plasma processed (etched, deposited, cleaned) have.

As one embodiment of the circumferential control means or the radial direction control means for uniformly processing the substrate 10, one surface of the electrode plate 130 facing the substrate holder 160 may be formed in a curved shape.

One surface of the electrode plate 130 facing the substrate holder 160 may be formed as shown in FIG. 7A and FIG. 7B in order to overcome the environmental parameter of the chamber 110 having a high plasma density and a low plasma density at the edge, As shown in (a) of FIG.

As another example, in order to overcome the environmental parameter of the chamber 110 having a low plasma density and a high plasma density at the edge of the substrate 10, one surface of the electrode plate 130 is convex .

Referring again to FIG. 1, the CCP plasma apparatus of the present invention may be provided with a showerhead 140 including an electrode plate 130 and a gas plate 150.

The showerhead 140 may be insulated against the inner wall of the chamber by an upper insulator. The showerhead 140 may include an electrode plate 130 made of a conductive material and may be a CCP plasma source.

A process gas that excites the plasma through the gas plate 150 may be injected into the chamber 110. At this time, the electrode plate 130 and the gas plate 150 can rotate about the rotation axis 190.

The gas plate 150 is disposed between the electrode plate 130 and the substrate holder 160 and can be fastened to the electrode plate 130. A gas flow path (not shown) through which the process gas input from the outside of the chamber 110 flows may be formed between the electrode plate 130 and the gas plate 150.

A plurality of discharge ports (not shown) through which the process gas is discharged may be formed in the gas plate 150. When the gas plate 150 is fixed, it is difficult to control the concentration of the process gas in the chamber 110 as desired.

According to the present invention, since the gas plate 150 rotates together with the electrode plate 130, the discharge port also rotates. The plasma density applied to the substrate 10 by the process gas controlled in the desired spray direction or region can be controlled as desired. Thus, the substrate can be uniformly processed.

The plurality of discharge ports through which the process gas is discharged may be formed at different sizes or at different positions along the radial direction or the circumferential direction of the rotating shower head 140. On the other hand, the shower head 140 may be a curved surface facing the substrate 10. The plasma density applied to the substrate 10 by the injection amount or the injection position control can be controlled as desired.

Meanwhile, the electrode plate 130 may be provided with a cooling channel 131 through which cooling water for cooling the electrode plate 130 flows.

The cooling channel 131 can rotate together with the electrode plate 130. The cooling water can be rotated about the rotation shaft 190 in accordance with the rotation of the electrode plate 130. [

In addition, the showerhead or electrode plate may include a multi-stage gas plate having a plurality of holes so that the process gas is uniformly sprayed. The multi-stage gas plate may be rotated together with the showerhead or the electrode plate. Due to the rotating showerhead or electrode plate, the process gas can be evenly distributed in the chamber, and the plasma is sprayed over the entire area of the substrate, with relatively few holes through which the gas is injected than the conventional fixed- The processing can be performed uniformly.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.

10 ... substrate 11 ... fine groove
110 ... chamber 130 ... electrode plate
131 ... cooling channel 140 ... shower head
150 ... gas plate 160 ... substrate holder
170 ... power section 171 ... link electrode
190 ... rotation shaft 191 ... terminal portion
193 ... blocking portion 210 ... electrode portion
211 ... first electrode portion 212 ... second electrode portion
213 ... third electrode portion 230 ... insulating portion

Claims (13)

A chamber in which a substrate is housed;
An electrode plate installed in an upper portion of the chamber;
A substrate holder installed in a lower portion of the chamber and on which a substrate is placed;
A power unit for supplying a high frequency power to at least one of the electrode plate and the substrate holder so as to generate a CCP plasma (Capacitively Coupled Plasma) between the electrode plate and the substrate holder;
And a rotating shaft extending obliquely to the substrate holder and serving as a rotation center of the electrode plate,
When the high frequency power is supplied from the power unit to the electrode plate or the substrate holder, the electrode plate rotates more than 360 degrees about the rotation axis in the chamber,
Wherein the electrode plate includes a first electrode portion and a second electrode portion to which the high-frequency power is applied,
Wherein the first electrode portion and the second electrode portion have different shapes and are arranged at different angles with respect to the rotation axis and have extension lengths from the rotation axis in the radial direction of the rotation axis,
Wherein an extension length of the first electrode portion in a radial direction of the rotation axis is shorter than an extension length of the second electrode portion,
The region of the first trace drawn by the rotation of the electrode plate due to the difference in extension length in the radial direction of the rotation axis causes the plasma to be pulsed by the first electrode portion and the second electrode portion, A region of the locus of the second electrode portion drawn by the rotation of the electrode plate except for the region of the first locus is pulsed only by the second electrode portion of the first electrode portion and the second electrode portion, CCP plasma device.
The method according to claim 1,
The electrode plate rotating about the rotation axis includes a plurality of electrode portions,
Wherein when the plurality of electrode units are rotated, a pulsed plasma is generated between the electrode plate and the substrate holder.
The method according to claim 1,
A pulsed plasma is generated between the electrode plate and the substrate holder when the electrode plate rotates,
The plasma processing and the pumping processing of the substrate are alternated by the pulsed plasma,
Wherein the power section pulses the high frequency power to pulsate the plasma,
Wherein the pulsing of the high frequency power is performed by periodically turning on or off the power unit or by combining the high frequency power and the pulse wave.
The method according to claim 1,
Wherein the electrode plate is provided with an electrode portion through which the high frequency power flows and an insulating portion from which the high frequency power is blocked alternately along the rotation direction,
Plasma is generated in a region facing the electrode portion in the substrate holder, plasma generation is suppressed in a region facing the insulating portion,
Wherein the electrode portion and the insulating portion alternately pass the points facing the specific region of the substrate holder by rotation of the electrode plate.
The method according to claim 1,
Wherein the electrode plate is provided with an electrode portion through which the high frequency power flows and an insulating portion from which the high frequency power is blocked alternately along the rotation direction,
Wherein the insulating portion includes an insulator from which the high-frequency power of the power portion is cut off, or includes a hole in which the electrode plate is partially cut.
The method according to claim 1,
Wherein the electrode plate includes a plate-like electrode portion,
Wherein the electrode portion extends along a radial direction of the rotation shaft, the high frequency power is applied,
Plasma is generated in a region of the substrate holder facing the electrode unit,
The electrode portion is rotated about the rotation axis,
Wherein the electrode portion faces a specific region of the substrate holder at a set rotation angle of the rotation axis.
delete The method according to claim 1,
The high-frequency power output from the power unit is applied to the electrode plate through the rotation shaft,
And a link electrode provided facing the outer circumferential surface of the rotating shaft and electrically connected to the power unit.
9. The method of claim 8,
A terminal portion electrically connected to the electrode plate and a blocking portion electrically disconnected from the electrode plate are alternately provided on an outer circumferential surface of the rotation shaft facing the link electrode,
The terminal portion and the blocking portion alternately face the link electrode by rotation of the rotation shaft,
When the terminal portion faces the link electrode, the high frequency power is applied to the electrode plate through the terminal portion,
When the blocking portion faces the link electrode, the high frequency power applied to the electrode plate is cut off,
Wherein the plasma is pulsed by alternately applying and blocking the high frequency power.
The method according to claim 1,
Wherein one surface of the electrode plate facing the substrate holder is curved.
The method according to claim 1,
A showerhead including the electrode plate and the gas plate is provided,
Process gas is injected into the chamber through the gas plate,
Wherein the electrode plate or the gas plate is rotated about the rotation axis.
The method according to claim 1,
A cooling passage through which cooling water flows is formed in the electrode plate,
The cooling channel is rotated together with the electrode plate,
And the cooling water is rotated about the rotation axis in accordance with rotation of the electrode plate.
The method according to claim 1,
A showerhead including the electrode plate and the gas plate is provided,
The plurality of discharge ports through which the process gas is discharged are formed at different sizes or at different positions along the radial direction or circumferential direction of the rotating showerhead,
Wherein the plasma density is controlled by the injection amount of the process gas or injection position control.

Images