TWI737335B - Detecting method of gas-liquid interface in nozzle and substrate processing apparatus - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 345
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims description 141
- 238000011282 treatment Methods 0.000 claims abstract description 64
- 238000001514 detection method Methods 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 44
- 238000009826 distribution Methods 0.000 claims abstract description 17
- 238000003384 imaging method Methods 0.000 claims abstract description 12
- 230000005856 abnormality Effects 0.000 claims description 28
- 238000000605 extraction Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 53
- 239000011248 coating agent Substances 0.000 description 45
- 238000005192 partition Methods 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 28
- 230000007723 transport mechanism Effects 0.000 description 22
- 238000012544 monitoring process Methods 0.000 description 21
- 238000012546 transfer Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 20
- 238000001816 cooling Methods 0.000 description 18
- 238000003860 storage Methods 0.000 description 14
- 230000032258 transport Effects 0.000 description 13
- 238000005406 washing Methods 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 11
- 238000005507 spraying Methods 0.000 description 10
- 102100030373 HSPB1-associated protein 1 Human genes 0.000 description 8
- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 230000032683 aging Effects 0.000 description 7
- 230000003139 buffering effect Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000010339 dilation Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/028—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring lateral position of a boundary of the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
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- G01F23/28—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring the variations of parameters of electromagnetic or acoustic waves applied directly to the liquid or fluent solid material
- G01F23/284—Electromagnetic waves
- G01F23/292—Light, e.g. infrared or ultraviolet
- G01F23/2921—Light, e.g. infrared or ultraviolet for discrete levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8405—Application to two-phase or mixed materials, e.g. gas dissolved in liquids
Abstract
本發明提供一種能夠高精度地檢測噴嘴內部流路中之處理液與氣體之氣液界面之技術。 本發明之檢測方法係檢測噴嘴內部流路中之處理液與氣體之氣液界面者,且具備拍攝工序及檢測工序。於拍攝工序中,由相機拍攝包含透明噴嘴之拍攝區域而獲取圖像,該透明噴嘴從內部流路之前端口即噴出口噴出處理液。於檢測工序中,基於內部流路中之處理液與氣體之存在分佈狀態不同之2個圖像之差量,檢測內部流路中之氣液界面。The present invention provides a technology capable of accurately detecting the gas-liquid interface between the processing liquid and the gas in the internal flow path of the nozzle. The detection method of the present invention detects the gas-liquid interface between the processing liquid and the gas in the internal flow path of the nozzle, and is equipped with a photographing process and a detection process. In the imaging process, the camera captures the imaging area including the transparent nozzle, which ejects the treatment liquid from the ejection port, which is the port in front of the internal flow path. In the detection process, the gas-liquid interface in the internal flow path is detected based on the difference between the two images in which the presence and distribution of the processing liquid and the gas in the internal flow path are different.
Description
本案係關於一種噴嘴內部之氣液界面之檢測方法及基板處理裝置。This case is about a method for detecting the gas-liquid interface inside the nozzle and a substrate processing device.
於專利文獻1中,記載有對基板塗佈抗蝕劑之基板處理裝置。該基板處理裝置包含:保持基板之基板保持部、對基板噴出處理液(抗蝕劑)之噴出噴嘴、及拍攝噴出噴嘴之噴出口附近作為抗蝕劑偵測區之相機。於專利文獻1中,由相機拍攝抗蝕劑偵測區,使用所獲得之圖像進行抗蝕劑噴出開始時點及抗蝕劑噴出結束時點之檢測。具體而言,基於由相機獲取之圖像,判定噴出噴嘴是否噴出抗蝕劑,基於其判定結果檢測抗蝕劑噴出開始時點及抗蝕劑噴出結束時點。於專利文獻1中,基於抗蝕劑噴出開始時點及抗蝕劑噴出結束時點獲取抗蝕劑噴出期間,當該抗蝕劑噴出期間成為特定容許範圍之外時,判定為產生抗蝕劑噴出不良,對基板處理裝置之操作員發出警告。因此,操作員能夠防止恐有處理不良之基板流出至後續工序。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2003-273003號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-273003
[發明所欲解決之問題][The problem to be solved by the invention]
於專利文獻1中,判定噴嘴是否噴出抗蝕劑,但關於在噴嘴內部流路中流動之處理液之狀態,並未記載。In
例如,正常之處理液噴出中,噴嘴之內部流路成為由處理液充滿之液密狀態。但是,若噴嘴之內部流路中混入氣泡,則該氣泡會與處理液一起從噴出口釋出。此時,存在處理液從噴嘴之噴出口飛濺之情形。For example, in a normal process liquid ejection, the internal flow path of the nozzle becomes a liquid-tight state filled with the process liquid. However, if air bubbles are mixed in the internal flow path of the nozzle, the air bubbles will be released from the ejection port together with the processing liquid. At this time, there is a case where the treatment liquid splashes from the nozzle outlet.
又,當噴嘴停止噴出時,存在進行回吸處理之情形,即,噴嘴之內部流路成為負壓而從噴出口將處理液之前端面吸入一定量。若該回吸處理後之前端面之位置(回吸位置)成為特定基準範圍之外,則有可能於下一次噴出處理液時產生噴出不良。Moreover, when the nozzle stops spraying, there is a case where the suction process is performed, that is, the internal flow path of the nozzle becomes a negative pressure and a certain amount of the treatment liquid is sucked from the front end face of the nozzle. If the position of the front end surface (the suck-back position) is outside the specific reference range after the suck-back process, there is a possibility that a discharge failure may occur when the treatment liquid is discharged next time.
又,亦會存在未能適當進行回吸處理而導致噴嘴之內部流路中混入氣泡之情形。於此情形時,有可能於下一次噴出處理液時產生噴出不良。In addition, there may also be cases where air bubbles are mixed in the internal flow path of the nozzle due to the failure to properly perform the suction treatment. In this case, the ejection failure may occur when the treatment liquid is ejected next time.
因此,期待能監視噴嘴之內部流路之狀態。更具體而言,期待能檢測處理液之回吸位置及氣泡之至少其中一者。換言之,期待能檢測噴嘴之內部流路中之處理液與氣體之界面。Therefore, it is expected that the state of the internal flow path of the nozzle can be monitored. More specifically, it is expected to be able to detect at least one of the suction position of the treatment liquid and the air bubbles. In other words, it is expected that the interface between the processing liquid and the gas in the internal flow path of the nozzle can be detected.
因此,本案之目的在於提供一種能夠高精度地檢測噴嘴之內部流路中之處理液與氣體之氣液界面之技術。 [解決問題之技術手段]Therefore, the purpose of this case is to provide a technology capable of accurately detecting the gas-liquid interface between the processing liquid and the gas in the internal flow path of the nozzle. [Technical means to solve the problem]
噴嘴內部之氣液界面之檢測方法之第1態樣係檢測噴嘴之內部流路中之處理液與氣體之氣液界面之檢測方法,其具備:拍攝工序,其由相機拍攝包含透明之上述噴嘴之拍攝區域而獲取圖像,上述噴嘴從上述內部流路之前端口即噴出口噴出上述處理液;及檢測工序,其基於上述內部流路中之上述處理液及上述氣體之存在分佈狀態不同之2個上述圖像之差量,檢測上述內部流路中之上述氣液界面。The first aspect of the detection method of the gas-liquid interface inside the nozzle is the detection method of the treatment liquid and the gas-liquid interface of the gas in the internal flow path of the nozzle, which includes: a photographing process, which is photographed by a camera including the transparent nozzle The image is captured in the imaging area, the nozzle ejects the processing liquid from the outlet orifice before the internal flow path; and the detection process is based on the difference in the presence and distribution of the processing liquid and the gas in the internal flow path 2 The difference between the above-mentioned images is used to detect the above-mentioned gas-liquid interface in the above-mentioned internal flow path.
噴嘴內部之氣液界面之檢測方法之第2態樣係如第1態樣之噴嘴內部之氣液界面之檢測方法,其中上述檢測工序具備:邊緣提取工序,其對上述相機獲取之上述2個上述圖像進行邊緣提取處理,分別獲取第1邊緣圖像及第2邊緣圖像;邊緣膨脹工序,其對上述第2邊緣圖像進行使邊緣膨脹之邊緣膨脹處理,獲取邊緣膨脹圖像;及獲取表示上述第1邊緣圖像與上述邊緣膨脹圖像之差量之差量圖像,基於上述差量圖像中除來自上述邊緣膨脹圖像之邊緣以外之邊緣,檢測上述氣液界面的工序。The second aspect of the detection method for the gas-liquid interface inside the nozzle is the detection method for the gas-liquid interface inside the nozzle as in the first aspect. Perform edge extraction processing on the image to obtain a first edge image and a second edge image, respectively; an edge expansion step, which performs an edge expansion process to expand the edge of the second edge image to obtain an edge expansion image; and A step of acquiring a difference image representing the difference between the first edge image and the edge expansion image, and detecting the gas-liquid interface based on the edges of the difference image excluding the edge from the edge expansion image .
噴嘴內部之氣液界面之檢測方法之第3態樣係如第2態樣之噴嘴內部之氣液界面之檢測方法,其中於上述拍攝工序中,上述相機於處理期間之至少一部分依次獲取上述圖像,該處理期間係自上述處理液於上述噴嘴之上述內部流路中靜止之狀態至結束上述處理液之噴出後上述處理液再次靜止為止,於上述檢測工序中,基於在上述處理期間之至少一部分所拍攝之上述2個上述圖像,檢測上述氣液界面之位置。The third aspect of the detection method of the gas-liquid interface inside the nozzle is the same as the second aspect of the detection method of the gas-liquid interface inside the nozzle. For example, the processing period is from a state in which the processing liquid is stationary in the internal flow path of the nozzle to the processing liquid being stopped again after the discharge of the processing liquid is completed. In the detection step, based on at least the processing period A part of the two above-mentioned images taken to detect the position of the above-mentioned gas-liquid interface.
噴嘴內部之氣液界面之檢測方法之第4態樣係如第3態樣之噴嘴內部之氣液界面之檢測方法,其中於上述拍攝工序中,上述相機在上述處理液於上述內部流路中靜止時獲取第1圖像,在上述處理液朝向上述噴出口流動時獲取第2圖像,於上述邊緣提取工序中,基於上述第1圖像獲取上述第1邊緣圖像,基於上述第2圖像獲取上述第2邊緣圖像。The fourth aspect of the detection method of the gas-liquid interface inside the nozzle is the detection method of the gas-liquid interface inside the nozzle as in the third aspect. A first image is acquired when stationary, and a second image is acquired when the processing liquid flows toward the ejection port. In the edge extraction step, the first edge image is acquired based on the first image, based on the second image. Like to obtain the above-mentioned second edge image.
噴嘴內部之氣液界面之檢測方法之第5態樣係如第4態樣之噴嘴內部之氣液界面之檢測方法,其進而具備如下工序:於上述檢測工序中,當基於上述第1圖像及上述第2圖像檢測到複數個上述氣液界面之位置時,判定為產生異常。The fifth aspect of the detection method of the gas-liquid interface inside the nozzle is like the fourth aspect of the detection method of the gas-liquid interface inside the nozzle, which further includes the following steps: in the above-mentioned detection process, when based on the above-mentioned first image And when the second image detects a plurality of positions of the gas-liquid interface, it is determined that an abnormality has occurred.
噴嘴內部之氣液界面之檢測方法之第6態樣係如第3至第5態樣中任一態樣之噴嘴內部之氣液界面之檢測方法,其中於上述拍攝工序中,上述相機於從上述噴嘴之上述噴出口噴出上述處理液之噴出期間,依次獲取上述圖像,於上述邊緣提取工序中,基於上述噴出期間內由上述相機獲取之當前之上述圖像而獲取上述第1邊緣圖像,且基於上述噴出期間內在當前之上述圖像之前最近由上述相機獲取之上述圖像而獲取上述第2邊緣圖像。The sixth aspect of the detection method of the gas-liquid interface inside the nozzle is the detection method of the gas-liquid interface inside the nozzle of any one of the third to the fifth aspects. During the ejection period during which the processing liquid is ejected from the nozzle of the nozzle, the images are sequentially acquired, and in the edge extraction step, the first edge image is acquired based on the current image acquired by the camera during the ejection period And acquiring the second edge image based on the image acquired by the camera most recently before the current image during the ejection period.
噴嘴內部之氣液界面之檢測方法之第7態樣係如第6態樣之噴嘴內部之氣液界面之檢測方法,其進而具備如下工序:於上述檢測工序中,當基於上述噴出期間內所拍攝之上述2個上述圖像檢測到上述氣液界面時,判定為產生異常。The seventh aspect of the detection method of the gas-liquid interface inside the nozzle is like the sixth aspect of the detection method of the gas-liquid interface inside the nozzle, which further has the following steps: in the above-mentioned detection process, when based on the above-mentioned ejection period When the gas-liquid interface is detected in the two captured images, it is determined that an abnormality has occurred.
基板處理裝置之態樣具備:基板保持部,其保持基板;透明噴嘴,其從內部流路之前端口即噴出口向由上述基板保持部保持之基板噴出處理液;相機,其拍攝包含上述噴嘴之拍攝區域而獲取圖像;及圖像處理部,其基於上述內部流路中之上述處理液與氣體之存在分佈狀態不同之2個上述圖像之差量,檢測上述內部流路中之上述處理液與上述氣體之氣液界面。 [發明之效果]The aspect of the substrate processing apparatus includes: a substrate holding portion that holds the substrate; a transparent nozzle that ejects the processing liquid from the port in front of the internal flow path, that is, to the substrate held by the substrate holding portion; Capturing an image in the imaging area; and an image processing unit that detects the processing in the internal flow path based on the difference between the two images in which the processing liquid and the gas in the internal flow path are different in their distribution states The gas-liquid interface between liquid and the above gas. [Effects of Invention]
根據噴嘴內部之氣液界面之檢測方法之第1態樣及基板處理裝置之態樣,由於基於相機所拍攝之圖像檢測噴嘴內部之氣液界面,因此,能夠高精度地檢測氣液界面。According to the first aspect of the detection method of the gas-liquid interface inside the nozzle and the aspect of the substrate processing apparatus, the gas-liquid interface inside the nozzle is detected based on the image taken by the camera, so the gas-liquid interface can be detected with high accuracy.
根據噴嘴內部之氣液界面之檢測方法之第2態樣,藉由第1邊緣圖像與邊緣膨脹圖像之差量,第1邊緣圖像之邊緣中除表示氣液界面之邊緣以外之邊緣被消除。即,第1邊緣圖像中僅表示氣液界面之邊緣殘留於差量圖像中。反言之,即便圖像間噴嘴存在位置偏移,於差量圖像中,亦能夠消除第1邊緣圖像之邊緣中除表示氣液界面之邊緣以外之邊緣。According to the second aspect of the detection method of the gas-liquid interface inside the nozzle, by the difference between the first edge image and the edge expansion image, the edges of the first edge image except those representing the gas-liquid interface Be eliminated. That is, in the first edge image, only the edge representing the gas-liquid interface remains in the difference image. Conversely, even if there is a positional displacement of the nozzles between the images, in the differential image, it is possible to eliminate the edges of the first edge image other than the edges representing the gas-liquid interface.
另一方面,邊緣膨脹圖像之邊緣殘留於差量圖像中,但基於除來自邊緣膨脹圖像之邊緣以外之邊緣檢測氣液界面之位置。On the other hand, the edge of the expanded edge image remains in the differential image, but the position of the gas-liquid interface is detected based on the edges other than the edge from the expanded edge image.
如上所述,排除圖像間之噴嘴之位置偏移之影響、及邊緣膨脹圖像之邊緣之影響,能夠檢測第1邊緣圖像中之氣液界面。由此,能夠高精度地檢測氣液界面。As described above, by excluding the influence of the positional displacement of the nozzle between the images and the influence of the edge of the edge expansion image, it is possible to detect the gas-liquid interface in the first edge image. As a result, the gas-liquid interface can be detected with high accuracy.
根據噴嘴內部之氣液界面之檢測方法之第3態樣,由於使用處理期間中由相機獲取之2個圖像,因此即便產生對噴嘴造成損傷等之經年要素,亦會於差量圖像中消除該經年要素之影響。由此,能夠更高精度地檢測氣液界面。According to the third aspect of the detection method of the gas-liquid interface inside the nozzle, since the two images acquired by the camera during the processing period are used, even if the aging factors such as damage to the nozzle are generated, the difference image will be Eliminate the influence of the aging factor. As a result, the gas-liquid interface can be detected with higher accuracy.
根據噴嘴內部之氣液界面之檢測方法之第4態樣,檢測第1圖像中之氣液界面之位置。靜止中之處理液之前端面之位置包含回吸位置,因此,能夠檢測回吸位置。According to the fourth aspect of the detection method of the gas-liquid interface inside the nozzle, the position of the gas-liquid interface in the first image is detected. The position of the front end surface of the processing liquid at rest includes the suck-back position, so the suck-back position can be detected.
根據噴嘴內部之氣液界面之檢測方法之第5態樣,能夠檢測噴出前之噴嘴內部流路之異常。According to the fifth aspect of the detection method of the gas-liquid interface inside the nozzle, the abnormality of the flow path inside the nozzle before ejection can be detected.
根據噴嘴內部之氣液界面之檢測方法之第6態樣,藉由基於最近之圖像之邊緣膨脹圖像與基於當前圖像之第1邊緣圖像之差量處理,檢測當前圖像中之氣液界面。再者,於噴嘴之內部流路產生氣泡,且該氣泡於噴出處理液之過程中移動至相機之拍攝區域之情形時,就初期而言,當前圖像中含有氣泡,最近之圖像中不含氣泡。根據第6態樣,於當前圖像中含有氣泡之時點,檢測基於該氣泡之氣液界面之位置,因此,能夠迅速地檢測氣泡。According to the sixth aspect of the detection method of the gas-liquid interface inside the nozzle, the difference between the edge expansion image based on the latest image and the first edge image based on the current image is used to detect the difference in the current image Air-liquid interface. Furthermore, when air bubbles are generated in the internal flow path of the nozzle, and the air bubbles move to the shooting area of the camera during the process of spraying the processing liquid, the current image contains air bubbles in the initial stage, and the latest image does not Contains bubbles. According to the sixth aspect, the position of the air-liquid interface based on the bubble is detected at the time when the current image contains the bubble, so that the bubble can be detected quickly.
根據噴嘴內部之氣液界面之檢測方法之第7態樣,能夠檢測噴出過程中之噴嘴內部流路之異常。According to the seventh aspect of the detection method of the gas-liquid interface inside the nozzle, it is possible to detect the abnormality of the flow path inside the nozzle during the ejection process.
以下,參照隨附圖式對實施方式進行說明。再者,圖式係概略表示之圖,為方便說明,適當地進行構成省略或構成簡化。又,圖式所示之構成之大小及位置之相互關係未必準確記載,可適當變更。Hereinafter, the embodiments will be described with reference to the accompanying drawings. In addition, the drawings are schematic diagrams, and for convenience of description, the configuration is omitted or simplified as appropriate. In addition, the relationship between the size and position of the structure shown in the drawings may not be accurately recorded, and may be changed as appropriate.
又,於以下所示之說明中,對相同之構成要素標註相同之符號進行圖示,對於其等之名稱及功能亦一樣。因此,為避免重複,有時省略對相同構成要素之詳細說明。In addition, in the description shown below, the same constituent elements are labeled with the same symbols and illustrated, and the names and functions thereof are the same. Therefore, in order to avoid repetition, detailed descriptions of the same constituent elements are sometimes omitted.
<基板處理裝置之概略構成> 圖1係概略地表示基板處理裝置之構成之一例之俯視圖。圖1之基板處理裝置係於基板(例如半導體晶圓)W形成抗蝕劑膜等,並且將經曝光之基板W顯影之裝置。<Schematic structure of substrate processing equipment> Fig. 1 is a plan view schematically showing an example of the structure of a substrate processing apparatus. The substrate processing apparatus of FIG. 1 is an apparatus that forms a resist film or the like on a substrate (for example, a semiconductor wafer) W, and develops the exposed substrate W.
圖1之例中,基板處理裝置包含移載傳送部110、處理部120、介面部130及控制部140。控制部140控制基板處理裝置之各種構成。In the example of FIG. 1, the substrate processing apparatus includes a
控制部140為電子電路,例如亦可具有資料處理裝置及記憶媒體。資料處理裝置例如亦可為CPU(Central Processor Unit,中央處理單元)等運算處理裝置。記憶媒體亦可具有非暫時性記憶媒體(例如ROM(Read Only Memory,唯讀記憶體)或硬碟)及暫時性記憶媒體(例如RAM(Random Access Memory,隨機存取記憶體))。非暫時性記憶媒體中例如可記憶規定控制部140執行之處理之程式。藉由處理裝置執行該程式,控制部140可執行程式所規定之處理。當然,控制部140執行之處理之一部分或全部亦可由硬體執行。The
於處理部120之兩側,移載傳送部110與介面部130鄰接設置。於介面部130進而鄰接設置有曝光機EXP,該曝光機EXP係與主裝置分開之外部裝置。On both sides of the
移載傳送部110包含複數個(圖中為4個)匣盒載置台111及ID(Identification,標識符)用搬送機構TID。複數個匣盒載置台111排列成1行,於各匣盒載置台111載置1個匣盒C。The
ID用搬送機構TID能夠於匣盒載置台111之側方沿著匣盒C之排列方向水平移動地設置,且能夠停止於與各匣盒C相對之位置處。ID用搬送機構TID包含保持臂,與各匣盒C及各處理部120進行基板W之交接。ID用搬送機構TID從匣盒C取出基板W並搬送至處理部120,並且將從處理部120接收之基板W收納至匣盒C。The transport mechanism TID for ID can be horizontally moved along the arrangement direction of the cassettes C on the side of the cassette mounting table 111, and can be stopped at a position opposite to each cassette C. The ID transfer mechanism TID includes a holding arm, and transfers the substrate W to each cassette C and each
處理部120對基板W進行處理。於圖1之例中,處理部120分為分區(cell)121、122。分區121包含主搬送機構T1,分區122包含主搬送機構T2。於分區121、122分別設置複數個處理單元。於圖1之例中,僅示出了分區121、122,但處理部120中,亦可沿著鉛直方向設置複數個分區121、122。即,可於分區121之上,積層與分區121相同之分區,亦可於分區122之上,亦積層與分區122相同之分區。總而言之,處理部120亦可具有複數個層級之構造。於分區121(及其上層階之分區),在基板W形成抗蝕劑膜等,於分區122(及其上層階之分區)將基板W顯影。The
分區121、122於橫向上排列且相互連結,構成將移載傳送部110與介面部130之間連接之一個基板處理線。各層級中均一樣。該等各基板處理線於鉛直方向上大致平行地設置。換言之,處理部120由層級構造之基板處理線構成。The
介面部130配置於處理部120與曝光機EXP之間,且於其等之間中繼基板W。The
以下,為了簡化說明,省略上層階之分區之說明而對分區121、122進行敍述。分區121中形成用以搬送基板W之搬送空間A1。搬送空間A1通過分區121之中央,形成為與分區121、122之排列方向平行之帶狀。分區121之處理單元包含對基板W塗佈處理液之塗佈處理單元123、及對基板W進行熱處理之熱處理單元124。塗佈處理單元123相對於搬送空間A1配置於一側,於另一側配置熱處理單元124。Hereinafter, in order to simplify the description, the description of the upper-level partitions will be omitted, and the
塗佈處理單元123以分別面向搬送空間A1之方式並排設置複數個。於本實施方式中,複數個塗佈處理單元123亦沿著鉛直方向並排配置。例如,以2行2段配置合計4個塗佈處理單元123。塗佈處理單元123包含進行於基板W形成抗反射膜之處理之抗反射膜用塗佈處理單元、及進行於基板W形成抗蝕劑膜之處理之抗蝕劑膜用塗佈處理單元。例如,下段之2個塗佈處理單元123係於基板W形成抗反射膜,上段之2個塗佈處理單元123係於基板W形成抗蝕劑膜。A plurality of
熱處理單元124以分別面向搬送空間A1之方式並排設置複數個。於本實施方式中,複數個熱處理單元124亦沿著鉛直方向並排配置。例如,能夠於橫向上配置3個熱處理單元124,於鉛直方向上積層5個熱處理單元124。熱處理單元124分別包含載置基板W之平板125等。熱處理單元124包含冷卻基板W之冷卻單元、連續進行加熱處理及冷卻處理之加熱冷卻單元、以及為提高基板W與覆膜之密接性而於六甲基矽氮烷(HMDS)之蒸氣氛圍中進行熱處理之黏附處理單元。再者,加熱冷卻單元具有2個平板125,並且包含使基板W於2個平板125間移動之省略圖示之局部搬送機構。各種熱處理單元分別有複數個,且配置於適當之位置。A plurality of
於移載傳送部110與分區121之邊界設置載置部PASS1,於分區121、122之邊界設置載置部PASS2。載置部PASS1於移載傳送部110與分區121之間中繼基板W,載置部PASS2於分區121、122之間中繼基板W。載置部PASS1、PASS2包含複數個將基板W以水平姿勢支持之複數個支持銷。此處所言及之水平姿勢係指基板W之厚度方向沿著鉛直方向之姿勢。載置部PASS1例如能夠載置2片基板W。載置部PASS1例如具有2段構成,於各段載置1片基板W。其中一段載置有從移載傳送部110向分區121搬送之基板W,於另一段載置有從分區121向移載傳送部110搬送之基板W。載置部PASS2亦同樣地具有2段構成。A placement part PASS1 is provided at the boundary between the
於搬送空間A1之大致中央設置有主搬送機構T1。主搬送機構T1與分區121之處理單元、載置部PASS1及載置部PASS2分別進行基板W之交接。於圖1之例中,主搬送機構T1包含2個保持臂H1、H2。由此,主搬送機構T1可使用其中一個保持臂H1從對象部(例如分區121之處理單元)取出基板W,並且使用另一個保持臂H2將另一基板W交遞至該對象部。A main conveyance mechanism T1 is provided in the approximate center of the conveyance space A1. The main transport mechanism T1 and the processing unit of the
於分區122形成用以搬送基板W之搬送空間A2。搬送空間A2以處於搬送空間A1之延長線上之方式形成。A transfer space A2 for transferring the substrate W is formed in the
分區122之處理單元包含對基板塗佈處理液之塗佈處理單元127、對基板W進行熱處理之熱處理單元126、及對基板W之周緣部進行曝光之邊緣曝光單元(未圖示)。塗佈處理單元127相對於搬送空間A2配置於一側,熱處理單元126及邊緣曝光單元配置於另一側。此處,塗佈處理單元127較佳為配置於與塗佈處理單元123相同一側。又,熱處理單元126及邊緣曝光單元較佳為與熱處理單元124為同一排。The processing unit of the
於本實施方式中,複數個塗佈處理單元127亦沿著鉛直方向並排配置。例如,以3行2段配置合計6個塗佈處理單元127。塗佈處理單元127包含將基板W顯影之顯影處理單元、及進行於基板W形成抗蝕劑覆蓋膜之處理之抗蝕劑覆蓋膜用塗佈處理單元。例如,下段之3個塗佈處理單元127於基板W形成抗蝕劑覆蓋膜,上段之3個塗佈處理單元127將基板W顯影。In this embodiment, a plurality of
熱處理單元126於沿著搬送空間A2之橫向上並排複數個,並且於鉛直方向上積層複數個。熱處理單元126包含加熱基板W之加熱單元、及將基板W冷卻之冷卻單元。A plurality of
邊緣曝光單元為單獨體,設置於特定位置。邊緣曝光單元包含將基板W能夠旋轉地加以保持之旋轉保持部(未圖示)、及對保持於該旋轉保持部之基板W之周緣進行曝光之光照射部(未圖示)。The edge exposure unit is a separate body and is set at a specific position. The edge exposure unit includes a rotation holding part (not shown) that rotatably holds the substrate W, and a light irradiation part (not shown) that exposes the periphery of the substrate W held by the rotation holding part.
於分區122與介面部130之邊界設置載置兼緩衝部P-BF。於載置兼緩衝部P-BF,載置從分區122搬送至介面部130之基板W。A placing and buffering portion P-BF is provided at the boundary between the
主搬送機構T2俯視下設置於搬送空間A2之大致中央。主搬送機構T2與主搬送機構T1同樣地構成。並且,主搬送機構T2與載置部PASS2、塗佈處理單元127、熱處理單元126、邊緣曝光單元及載置兼緩衝部P-BF各者進行基板W之交接。The main conveyance mechanism T2 is installed in the approximate center of the conveyance space A2 in a plan view. The main transport mechanism T2 has the same configuration as the main transport mechanism T1. In addition, the main transport mechanism T2 transfers the substrate W to each of the placing section PASS2, the
介面部130包含洗淨處理區塊131及搬入搬出區塊132。於洗淨處理區塊131與搬入搬出區塊132之邊界設置有載置部PASS3。載置部PASS3之構成之一例與載置部PASS1、PASS2相同。於載置部PASS3之上側或下側設置有未圖示之載置兼冷卻單元。載置兼冷卻單元將基板W冷卻至適於曝光之溫度。The
於搬入搬出區塊132設置有IF用搬送機構TIF。IF用搬送機構TIF將基板W從載置兼冷卻單元搬送至曝光機EXP之搬入部LPa,並且將來自曝光機EXP之搬出部LPb之基板W搬送至載置部PASS3。The transport mechanism TIF for IF is installed in the carry-in and carry-out
洗淨處理區塊131包含2個洗淨處理單元133a、133b、及2個搬送機構T3a、T3b。2個洗淨處理單元133a、133b以夾著一組搬送機構T3a、T3b之方式配置。洗淨處理單元133a將曝光前之基板W洗淨並乾燥。複數個洗淨處理單元133a亦可積層為多段。搬送機構T3a將基板W從載置兼緩衝部P-BF搬送至洗淨處理單元133a,且將已洗淨之基板W從洗淨處理單元133a搬送至載置兼冷卻單元。The
洗淨處理單元133b將曝光後之基板W洗淨並乾燥。複數個洗淨處理單元133b亦可多段積層。搬送機構T3b將基板W從載置部PASS3搬送至洗淨乾燥處理單元133b,且將已洗淨之基板W從洗淨乾燥處理單元133b搬送至載置兼緩衝部P-BF。The
於此種基板處理系統中,基板W按照以下方法進行處理。即,將從匣盒C取出之基板W藉由分區121之冷卻單元予以冷卻。冷卻後之基板W接受分區121之抗反射膜用塗佈處理單元之塗佈處理。藉此,於基板W之表面形成抗反射膜。形成有抗反射膜之基板W藉由加熱冷卻單元加熱後予以冷卻。冷卻後之基板W接受抗蝕劑膜用塗佈處理單元之塗佈處理。藉此,於基板W之表面形成抗蝕劑膜。形成有抗蝕劑膜之基板W再次由加熱冷卻單元加熱後予以冷卻。形成有抗蝕劑膜之基板W接受分區122之抗蝕劑覆蓋膜用塗佈處理單元之塗佈處理。藉此,於基板W之表面形成抗蝕劑覆蓋膜。形成有抗蝕劑覆蓋膜之基板W由分區122之加熱冷卻單元加熱後予以冷卻。In this substrate processing system, the substrate W is processed according to the following method. That is, the substrate W taken out from the cassette C is cooled by the cooling unit of the
冷卻後之基板W之周緣部由分區122之邊緣曝光單元曝光。周緣部被曝光後之基板W於洗淨處理單元133a中接受洗淨乾燥處理。洗淨後之基板W由載置兼冷卻單元冷卻。冷卻後之基板W由外部之曝光機EXP曝光。曝光後之基板W由洗淨乾燥處理單元133b接受洗淨乾燥處理。洗淨後之基板W由分區122之加熱冷卻單元接受曝光後烘烤處理。烘烤後之基板W由分區122之冷卻單元冷卻。冷卻後之基板W由顯影處理單元接受顯影處理。實施顯影處理後之基板W由加熱冷卻單元加熱後冷卻。冷卻後之基板W被搬送至移載傳送部110之匣盒C。按照以上方式,基板處理裝置對基板W進行處理。The peripheral portion of the substrate W after cooling is exposed by the edge exposure unit of the
<塗佈處理單元>
圖2係概略表示作為塗佈處理單元123或塗佈處理單元127之一例之處理單元1之部分構成之一例。如圖2所例示,處理單元1包含基板保持部10、噴出噴嘴12、相機35、圖像處理部30及控制部140。<Coating processing unit>
FIG. 2 schematically shows an example of a partial configuration of the
基板保持部10將基板W以大致水平姿勢保持。此處所言及之水平姿勢係指基板W之厚度方向沿著鉛直方向之狀態。又,基板保持部10之中心下表面經由旋轉軸11而與未圖示之電動馬達連結。控制部140藉由使該電動馬達旋轉而使基板保持部10及保持於該基板保持部10之基板W於水平面內旋轉。The
噴出噴嘴12為中空筒狀體,經由供給配管18與處理液供給源15連通連接。噴出噴嘴12為透明,其內部流路14可見。換言之,噴出噴嘴12具有能夠從外部看到其內部流路14之程度之透明性。於噴出噴嘴12之下表面,形成有內部流路14之前端口即噴出口13。內部流路14之基端口與供給配管18連通連接。The
於供給配管18之途中,設置有供給閥16及回吸閥17。藉由將供給閥16打開,來自處理液供給源15之處理液經由供給配管18供給至噴出噴嘴12。噴出噴嘴12將所供給之處理液供給至基板W上。處理液例如包含抗蝕劑液、成膜用塗佈液、顯影液或洗淨液(亦稱為沖洗液)。一面由電動馬達使基板保持部10旋轉,一面打開供給閥16將處理液從噴出噴嘴12之噴出口13供給至基板W上,藉此進行塗佈處理。In the middle of the
回吸閥17於停止噴出處理液時,將噴出噴嘴12之內部流路14之處理液朝噴出口13之相反側吸入,使處理液之前端面遠離噴出口13。藉此,能夠抑制處理液因重力而從噴出噴嘴12之噴出口13落下(所謂之滴落)。When the
噴出噴嘴12以能夠藉由未圖示之噴嘴移動機構於處理位置與待機位置之間移動之方式設置。處理位置係噴出噴嘴12對基板W噴出處理液時之位置。例如,處理位置係相對於由基板保持部10保持之基板W之中央部於鉛直上側對向之位置。待機位置係例如於鉛直方向上不與基板W對向之位置。噴嘴移動機構例如具有滾珠螺桿構造。The
相機35係包含CCD(charge coupled device,電荷耦合器件)之所謂二維CCD相機。相機35以特定之時間間隔(圖框率)進行拍攝,依次獲取圖像資料,並將該圖像資料發送到圖像處理部30。又,相機35以能夠拍攝包含噴出噴嘴12之噴出口13之拍攝區域之方式,經由支持部37於處理單元1內之特定部位面向基板W之主面及噴出口13設置。The
於圖2之例中,於處理單元1設置照明36。照明36例如係由發光二極體構成之光源,以照射拍攝區域之方式,經由支持部38設置於處理單元1內之特定部位,例如相機35附近。In the example of FIG. 2, a
控制部140控制處理單元1之各種構成。具體而言,控制部140控制供給閥16、回吸閥17、電動馬達及噴嘴移動機構。又,控制部140亦能夠控制相機35。例如,控制部140對相機35輸出拍攝指示,相機35根據該拍攝指示進行拍攝。The
控制部140為電子電路,例如可具有資料處理裝置141及記憶媒體142。資料處理裝置141例如亦可為CPU(Central Processor Unit)等運算處理裝置。記憶媒體142亦可具有非暫時性記憶媒體(例如ROM(Read Only Memory)或硬碟)及暫時性記憶媒體(例如RAM(Random Access Memory))。非暫時性記憶媒體中例如可記憶規定控制部140執行之處理之程式。藉由資料處理裝置141執行該程式,控制部140可執行程式所規定之處理。當然,控制部140執行之處理之一部分或全部亦可由硬體執行。The
圖像處理部30從相機35接收由相機35量化後之圖像資料。圖像處理部30對該圖像資料進行圖像處理。於圖2之例中,圖像處理部30包含處理器31、第1處理記憶體32及第2處理記憶體33。第1處理記憶體32及第2處理記憶體33中記憶相機35或處理器31中量化後之圖像資料。The
處理器31為電子電路。處理器31對記憶於第1處理記憶體32及第2處理記憶體33之圖像資料進行圖像處理,檢測噴出噴嘴12之內部流路14內之處理液與氣體之氣液界面。此點將於下文中詳細敍述。The
再者,於圖2之例中,控制部140及圖像處理部30分開設置。但是,圖像處理部30之圖像處理功能亦可安裝於控制部140中。於此情形時,控制部140作為圖像處理部30發揮功能。Furthermore, in the example of FIG. 2, the
<處理單元之動作>
圖3係表示處理單元1之動作之一例之流程圖。首先,主搬送機構T1或主搬送機構T2將基板W搬入至處理單元1,基板保持部10保持所搬入之基板W(步驟S1)。<Actions of the processing unit>
FIG. 3 is a flowchart showing an example of the operation of the
繼而,處理單元1並行執行塗佈處理(步驟S2)及監視處理(步驟S3)。塗佈處理係指於基板W之上表面塗佈處理液之處理。監視處理係指監視噴出噴嘴12之內部流路14中之處理液之狀態之處理。Then, the
<塗佈處理>
於塗佈處理中,首先,未圖示之噴嘴移動機構使噴出噴嘴12從待機位置移動至處理位置。藉此,噴出噴嘴12進入至相機35之拍攝區域內。繼而,未圖示之電動馬達使基板保持部10及基板W旋轉,並且打開供給閥16。藉此,從噴出噴嘴12朝向旋轉中之基板W之表面噴出處理液。從噴出噴嘴12噴出至基板W之表面之處理液隨著基板W之旋轉而於基板W之表面上擴展,並從基板W之周緣飛濺。<Coating treatment>
In the coating process, first, a nozzle moving mechanism (not shown) moves the
當供給閥16打開後例如經過特定期間時,將供給閥16閉合。藉此,結束從噴出噴嘴12之處理液之噴出。然後,電動馬達使基板W之旋轉結束。藉此,於基板W之上表面形成特定之膜(例如抗蝕劑)。按照以上方式,處理單元1進行對基板W之塗佈處理。When a certain period of time elapses after the opening of the
<監視處理>
於監視處理中,相機35對拍攝區域進行拍攝而依次獲取圖像資料,圖像處理部30基於該圖像資料監視噴出噴嘴12之內部流路14之處理液之狀態。更具體而言,圖像處理部30之處理器31基於該圖像資料檢測噴出噴嘴12之內部流路14中之處理液與氣體之氣液界面。以下,首先對檢測氣液界面之思考方法進行概述。<Monitoring processing>
In the monitoring process, the
圖4係模式性表示由相機35獲取之圖像資料IM1之一例之圖。圖4中,示出了由相機35依次獲取之3個圖像資料IM1[i-1]~IM1[i+1]。圖像資料IM1[i-1]係於最早之時間點獲取之圖像資料IM1,圖像資料IM1[i+1]係於最晚之時間點獲取之圖像資料IM1。於圖4之例中,示出了處理液開始流動之前後之圖像資料IM1。噴出噴嘴12為透明,因此,於各圖像資料IM1中亦示出了內部流路14中之處理液。FIG. 4 is a diagram schematically showing an example of the image data IM1 acquired by the
於圖4之例中,噴出噴嘴12之表面產生了經年要素19。所謂經年要素19係指表示噴出噴嘴12之外觀上之經年變化之要素,例如噴出噴嘴12之表面產生之損傷或附著於該表面之污漬等。該經年要素19於圖像資料IM1[i-1]~IM1[i+1]之任一圖像資料中均共通地包含。In the example of FIG. 4, the aging
圖像資料IM1[i-1]係於供給閥16已關閉之閉合狀態下獲取之圖像資料IM1。於該閉合狀態下,處理液於噴出噴嘴12之內部流路14中靜止,該處理液之前端面位於較噴出口13更靠上側。處理液靜止時之該前端面之位置亦被稱為回吸位置。只要該回吸位置位於適當之範圍內,便能夠從噴出噴嘴12適當地噴出處理液。再者,處理液之前端面係處理液與氣體之氣液界面之一例。The image data IM1[i-1] is the image data IM1 acquired in the closed state where the
圖像資料IM1[i]亦為於供給閥16已關閉之閉合狀態下獲取之圖像資料IM1。處理液靜止時之該前端面之位置實質上未變化,因此,圖像資料IM1[i]中之內部流路14之處理液與氣體之存在分佈狀態與圖像資料IM1[i-1]中之存在分佈狀態相同。理想而言,圖像資料IM1[i-1]、IM1[i]相互一致。The image data IM1[i] is also the image data IM1 acquired in the closed state where the
圖像資料IM1[i+1]係供給閥16剛打開後獲取之圖像資料IM1。供給閥16開始打開時,處理液於噴出噴嘴12之內部流路14中開始朝向噴出口13移動。圖像資料IM1[i+1]中,處理液從噴出噴嘴12之噴出口13噴出。由此,噴出噴嘴12之內部流路14被處理液填充,內部流路14中已不存在處理液之前端面。即,內部流路14中氣體所占之體積比率為零。該圖像資料IM1[i+1]之內部流路14中之存在分佈狀態與圖像資料IM1[i-1]、IM1[i]中之存在分佈狀態之任一者均不同。The image data IM1[i+1] is the image data IM1 acquired immediately after the
如上所述,於圖4例示之圖像資料IM1[i+1]中,處理液從噴出噴嘴12之噴出口13噴出。由此,之後由相機35獲取之圖像資料IM1中之存在分佈狀態只要能適當地噴出處理液,則與圖像資料IM1[i+1]相同。As described above, in the image data IM1[i+1] illustrated in FIG. 4, the processing liquid is ejected from the
其次,對存在分佈狀態不同之圖像資料IM1[i]、IM1[i+1]之差量進行研究。理想而言,圖像資料IM1[i]及圖像資料IM1[i+1]僅於以下說明之區域R1不同,於其他區域相互一致。即,區域R1係圖像資料IM1[i]中之處理液之前端面與圖像資料IM1[i+1]中之處理液之下端(圖例中為圖像資料IM1之下端)之間的矩形區域。圖像資料IM1[i]中,氣體佔據區域R1,與此相對,圖像資料IM1[i+1]中,處理液佔據區域R1。再者,於圖4之例中,為了避免圖變得複雜,將區域R1表示得稍小。Secondly, the difference between IM1[i] and IM1[i+1] with different distribution states is studied. Ideally, the image data IM1[i] and the image data IM1[i+1] are different only in the region R1 described below, and are consistent with each other in other regions. That is, the area R1 is a rectangular area between the front end of the processing liquid in the image data IM1[i] and the lower end of the processing liquid in the image data IM1[i+1] (the lower end of the image data IM1 in the illustration). In the image data IM1[i], the gas occupies the area R1, while in the image data IM1[i+1], the processing liquid occupies the area R1. Furthermore, in the example of FIG. 4, in order to avoid the diagram from becoming complicated, the region R1 is shown slightly smaller.
表示該區域R1之圖像資料可藉由圖像資料IM1[i]與圖像資料IM1[i+1]之差量而獲得。理想而言,區域R1以外之區域於圖像資料IM1[i-1]、IM1[i]中相互一致。由此,理想而言,藉由該差量消除區域R1以外之資訊,可獲得僅包含區域R1之圖像資料。該區域R1之上端表示圖像資料IM1[i]中之處理液之前端面。於該圖像資料中,由於區域R1以外之資訊被消除,因此,能夠根據該圖像資料容易地檢測處理液之前端面。The image data representing the region R1 can be obtained by the difference between the image data IM1[i] and the image data IM1[i+1]. Ideally, the regions other than the region R1 are consistent with each other in the image data IM1[i-1] and IM1[i]. Therefore, ideally, by eliminating information outside the region R1 by the difference, image data including only the region R1 can be obtained. The upper end of the region R1 represents the front end surface of the processing liquid in the image data IM1[i]. In the image data, since the information outside the region R1 is eliminated, it is possible to easily detect the front end surface of the processing liquid based on the image data.
因此,圖像處理部30之處理器31基於存在分佈狀態不同之2個圖像資料IM1之差量,檢測內部流路14中之氣液界面(例如處理液之前端面)。以下,對監視處理之具體之一例進行說明。Therefore, the
圖5係表示監視處理(圖3之步驟S3)之具體之一例之流程圖。該監視處理與塗佈處理(圖3之步驟S2)並行進行。首先,相機35對拍攝區域進行拍攝而獲取圖像資料IM1[n],將圖像資料IM1[n]發送至圖像處理部30(步驟S31)。值n之初始值例如為0。如下上述,步驟S31反覆執行,因此,相機35於進行塗佈處理之整個期間(處理期間)依次進行拍攝。Fig. 5 is a flowchart showing a specific example of the monitoring process (step S3 in Fig. 3). This monitoring process is performed in parallel with the coating process (step S2 in FIG. 3). First, the
於處理期間之初期,噴出噴嘴12尚未移動至處理位置,因此,噴出噴嘴12未位於拍攝區域,由相機35獲取之圖像資料IM1[n]中尚不包含噴出噴嘴12。At the beginning of the processing period, the
圖像處理部30之處理器31基於對圖像資料IM1[n]之圖像處理(形狀識別處理),確認噴出噴嘴12之位置(步驟S32)。具體而言,處理器31判定噴出噴嘴12是否位於處理位置。該判定例如藉由圖案匹配進行。例如,將預先拍攝位於處理位置之噴出噴嘴12所得之參照圖像預先記憶於記憶媒體(例如第1處理記憶體32)中。然後,處理器31藉由圖像資料IM1[n]與參照圖像之圖案匹配而特定出噴出噴嘴12之位置,判定噴出噴嘴12是否位於處理位置。若噴出噴嘴12不位於處理位置,則處理器31不進行後述之步驟S32~S35之處理,判定是否結束監視處理(步驟S36)。此處,由於尚未結束監視處理,因此,於將值n增量之後再次執行步驟S31。The
當噴出噴嘴12移動至處理位置時,圖像資料IM1[n]之特定區域中包含噴出噴嘴12。處理器31基於該圖像資料IM1[n],判定為噴出噴嘴12位於處理位置。當判定為噴出噴嘴12位於處理位置時,處理器31基於2個圖像資料IM1之差量,檢測噴出噴嘴12之內部流路14中之氣液界面(步驟S33、S34)。When the
且說,當供給閥16處於閉合過程中時,理想而言,由相機35依次獲取之圖像資料IM1[n]相互相同(例如,參照圖4之圖像資料IM1[i-1]、IM1[i])。由此,由該等圖像資料IM1之差量獲得之圖像資料之像素之像素值理想而言全部為零,處理液之前端面之資訊亦消失。因此,於本實施方式之氣液界面之檢測處理(步驟S33、S34)中,當供給閥16處於閉合過程中時不檢測氣液界面之位置。In addition, when the
此處,為了容易理解,首先,列舉供給閥16剛開始打開後獲取之圖像資料IM1[n]為例對處理進行說明。即,對獲取圖4之圖像資料IM1[i+1]作為圖像資料IM1[n]之情形進行說明。Here, for easy understanding, first, take the image data IM1[n] acquired immediately after the
處理器31對圖像資料IM1[n]進行預處理(步驟S33)。首先,處理器31對圖像資料IM1[n]進行Canny法等邊緣提取處理,獲取邊緣圖像IM2[n]。圖6係模式性表示邊緣圖像IM2[n]之一例之圖。此處,表示邊緣之像素之像素值為「1」,不表示邊緣之像素之像素值為「0」。The
處理器31將該邊緣圖像IM2[n]記憶於第1處理記憶體32中。再者,於第2處理記憶體33中,記憶有由最近(即前一次)之步驟S33獲取之邊緣圖像IM2[n-1]。邊緣圖像IM2[n-1]係對最近之圖像資料IM1[n-1]進行邊緣提取處理而獲取之圖像資料。圖像資料IM1[n-1]係於供給閥16處於閉合過程中時最後獲取之圖像資料IM1,相當於圖4之圖像資料IM1[i]。The
繼而,處理器31對邊緣圖像IM2[n]進行邊緣膨脹處理,獲取邊緣膨脹圖像IM3[n]。所謂邊緣膨脹處理係指將邊緣圖像IM2[n]中之邊緣之寬度擴大之處理,例如係指以表示邊緣之像素為中心於上下左右方向上將邊緣擴大特定寬度之處理。圖7係模式性表示邊緣膨脹圖像IM3[n]之一例之圖。由圖6與圖7之比較可理解,邊緣膨脹圖像IM3[n]中之邊緣之寬度大於邊緣圖像IM2[n]中之邊緣之寬度。由此,以下,將邊緣膨脹圖像IM3[n]中之邊緣亦稱為寬幅邊緣。處理器31將該邊緣膨脹圖像IM3[n]記憶於第1處理記憶體32中。Then, the
繼而,處理器31使用最近之邊緣圖像IM2[n-1]與當前之邊緣膨脹圖像IM3[n]進行差量處理,檢測氣液界面(例如處理液之前端面)(步驟S34)。圖8係表示氣液界面之檢測處理(步驟S34)之具體動作之一例之流程圖。處理器31使用邊緣圖像IM2[n-1]與邊緣膨脹圖像IM3[n]進行差量處理,獲取差量圖像IM4[n](步驟S341)。圖9係用以說明該差量處理之圖。所謂差量處理係指將兩個圖像之相同位置之像素彼此相減之處理。此處,處理器31從邊緣圖像IM2[n-1]減去邊緣膨脹圖像IM3[n]而進行差量處理。Then, the
如圖9所例示,邊緣圖像IM2[n-1]中包含表示噴出噴嘴12之邊緣E1、表示經年要素19之邊緣E2、及表示處理液之前端面之邊緣E3。另一方面,邊緣膨脹圖像IM3[n]中包含相當於噴出噴嘴12之寬幅邊緣WE1、相當於經年要素19之寬幅邊緣WE2、及相當於從噴出口13噴出之處理液之輪廓之寬幅邊緣WE4。As illustrated in Fig. 9, the edge image IM2[n-1] includes an edge E1 representing the
邊緣E1及寬幅邊緣WE1表示相互相同之對象(具體而言為噴出噴嘴12),邊緣E1較寬幅邊緣WE1細。由此,即便噴出噴嘴12之位置於邊緣圖像IM2[n-1]與邊緣膨脹圖像IM3[n]之間稍微偏移,於將邊緣圖像IM2[n-1]及邊緣膨脹圖像IM3[n]重合之情形時,邊緣E1亦會被寬幅邊緣WE1覆蓋。換言之,與表示邊緣E1之各像素相同位置之邊緣膨脹圖像IM3[n]之像素成為表示寬幅邊緣WE1之像素。The edge E1 and the wide edge WE1 indicate the same object (specifically, the ejection nozzle 12), and the edge E1 is thinner than the wide edge WE1. Therefore, even if the position of the
同樣地,邊緣E2及寬幅邊緣WE2表示相互相同之對象(具體而言為經年要素19),邊緣E2較寬幅邊緣WE2細。由此,即便噴出噴嘴12之位置稍微偏移,於將邊緣圖像IM2[n-1]及邊緣膨脹圖像IM3[n]重合之情形時,邊緣E2亦會被寬幅邊緣WE2覆蓋。Similarly, the edge E2 and the wide edge WE2 represent the same object (specifically, the age element 19), and the edge E2 is thinner than the wide edge WE2. Therefore, even if the position of the
因此,藉由差量處理,邊緣E1、E2於差量圖像IM4[n]中被消除。即,差量圖像IM4[n]中相當於邊緣E1、E2之像素之像素值為「0」(=1-1)。Therefore, through the difference processing, the edges E1 and E2 are eliminated in the difference image IM4[n]. That is, the pixel value of the pixels corresponding to the edges E1 and E2 in the difference image IM4[n] is "0" (=1-1).
另一方面,寬幅邊緣WE1、WE2中與邊緣E1、E2分別不重複之區域(以下稱為邊緣SE1、SE2)殘留於差量圖像IM4[n]中。但是,藉由差量處理,邊緣SE1、SE2之各像素之像素值成為「-1」(=0-1)。於圖9之例中,將像素值為「-1」之像素以斜線陰影表示。On the other hand, regions of the wide edges WE1 and WE2 that do not overlap with the edges E1 and E2 (hereinafter referred to as edges SE1 and SE2) remain in the difference image IM4[n]. However, by the difference processing, the pixel value of each pixel of the edges SE1 and SE2 becomes "-1" (=0-1). In the example of FIG. 9, the pixels with the pixel value "-1" are shaded with diagonal lines.
邊緣膨脹圖像IM3[n]內之與寬幅邊緣WE4對應之邊緣不存在於邊緣圖像IM2[n-1]中,因此,寬幅邊緣WE4殘留於差量圖像IM4[n]中。但是,藉由差量處理,寬幅邊緣WE4之各像素之像素值亦成為「-1」(=0-1)。The edge corresponding to the wide edge WE4 in the edge expansion image IM3[n] does not exist in the edge image IM2[n-1], so the wide edge WE4 remains in the difference image IM4[n]. However, through the difference processing, the pixel value of each pixel of the wide edge WE4 also becomes "-1" (=0-1).
邊緣圖像IM2[n-1]內之與邊緣E3對應之寬幅邊緣不存在於邊緣膨脹圖像IM3[n]中,因此,邊緣E3殘留於差量圖像IM4[n]中。差量圖像IM4[n]之邊緣E3之各像素之像素值仍為「1」(=1-0)。The wide edge corresponding to the edge E3 in the edge image IM2[n-1] does not exist in the edge expansion image IM3[n], so the edge E3 remains in the difference image IM4[n]. The pixel value of each pixel of the edge E3 of the difference image IM4[n] is still "1" (=1-0).
如上所述,差量圖像IM4[n]中包含表示邊緣圖像IM2[n-1]中之處理液之前端面之邊緣E3、及來自邊緣膨脹圖像IM3[n]之邊緣SE1、SE2、WE4。於該差量圖像IM4[n]中,邊緣SE1、SE2、WE4之各像素之像素值為「-1」,邊緣E3之各像素之像素值為「1」,其他像素之像素值為「0」。As described above, the difference image IM4[n] includes the edge E3 representing the front end surface of the processing liquid in the edge image IM2[n-1], and the edges SE1, SE2 from the edge expansion image IM3[n] WE4. In the difference image IM4[n], the pixel value of each pixel of the edge SE1, SE2, WE4 is "-1", the pixel value of each pixel of the edge E3 is "1", and the pixel value of other pixels is " 0".
處理器31基於差量圖像IM4[n]內之邊緣E3之位置,檢測圖像資料IM1[n-1]中之氣液界面。作為具體處理之一例,處理器31於差量圖像IM4[n]中,切除來自邊緣膨脹圖像IM3[n]之邊緣SE1、SE2、WE4(步驟S342)。要言之,處理器31切除像素值為負值(「-1」)之像素。例如,處理器31將該像素之像素值從「-1」置換為「0」。該切除後之差量圖像IM4[n](切除圖像)中僅殘留邊緣E3。該邊緣E3之各像素之像素值為「1」。因此,處理器31基於具有正值(「1」)像素值之像素之位置,求出氣液界面之位置(步驟S343)。The
處理器31例如亦能以噴出噴嘴12之噴出口13之位置為基準而檢測氣液界面之位置。噴出口13之位置例如可預先設定,並記憶於記憶媒體(例如第1處理記憶體32)中。或者,處理器31亦可基於圖像資料IM1[n-1]檢測噴出口13之位置。例如,處理器31可藉由圖像資料IM1[n-1]與參照圖像之圖案匹配而檢測噴出口13之位置。The
如上所述,當供給閥16剛開始打開後便由相機35獲取圖像資料IM1[n]時,處理器31檢測在其之前最近獲取之圖像資料IM1[n-1]中之氣液界面之位置(步驟S32~S34)。該最近之圖像資料IM1[n-1]係供給閥16處於閉合過程中之最後獲取之圖像資料IM1,其氣液界面之位置表示回吸位置。即,本監視處理(步驟S3)中最初檢測到之氣液界面之位置表示回吸位置。As described above, when the image data IM1[n] is acquired by the
繼而,處理器31基於檢測到之氣液界面進行異常判定(步驟S35)。具體而言,處理器31將本監視處理中最初檢測到之氣液界面之位置特定為回吸位置,判定該回吸位置是否處於基準範圍內。該基準範圍經預先設定,並記憶於記憶媒體(例如第1處理記憶體32)中。Then, the
當判定為回吸位置處於基準範圍外時,處理器31判定為產生異常,將其判定結果發送至控制部140。控制部140例如使報知部40報知該異常。報知部40例如為顯示器或揚聲器等器件。藉由該報知,作業人員能夠獲知產生了異常,能夠採取適當之對策。When it is determined that the suck-back position is outside the reference range, the
繼而,處理器31判定是否應該結束監視處理(步驟S36)。例如,當塗佈處理(步驟S2)結束時,處理器31判定為應該結束監視處理,並結束監視處理。當判定為不應該結束監視處理時,處理器31將邊緣圖像IM2[n]記憶於第2處理記憶體33中。並且,將值n增量後再次進行步驟S1中之相機35之拍攝。反覆進行上述動作直至塗佈處理結束為止。Then, the
如上所述,處理器31基於由相機35獲取之圖像資料IM1,檢測噴出噴嘴12之內部流路14中之氣液界面之位置,因此,能夠高精度地檢測氣液界面之位置。As described above, the
又,於上述例中,處理器31使用處理液靜止時之圖像資料IM1[n-1]及處理液流動時之圖像資料IM1[n],檢測圖像資料IM1[n-1]中之處理液之前端面。由此,可檢測回吸位置。Also, in the above example, the
而且,於上述例中,處理器31基於邊緣圖像IM2[n-1]與邊緣膨脹圖像IM3[n]之差量,檢測氣液界面之位置。藉此,即便圖像資料IM1間存在噴出噴嘴12之位置偏移,亦可於差量圖像IM4[n]中將邊緣圖像IM2[n-1]內之除邊緣E3以外之邊緣消除。又,處理器31藉由切除來自邊緣膨脹圖像IM3[n]之邊緣SE1、SE2、WE4,可於差量圖像IM4[n]中僅殘留邊緣E3。邊緣E3係邊緣圖像IM2[n-1]中表示處理液之前端面(氣液界面)之邊緣。因此,處理器31可排除圖像資料IM1間之噴出噴嘴12之位置偏移之影響,高精度地檢測氣液界面之位置。Furthermore, in the above example, the
又,於上述例中,處理器31基於在處理期間(即塗佈處理中)由相機35獲取之2個圖像資料IM1之差量,檢測氣液界面之位置。由此,即便噴出噴嘴12產生了污漬或損傷等經年要素19,該經年要素19亦會共通地包含於該2個圖像資料IM1中。由此,藉由該2個圖像資料IM1中之差量,可排除該經年要素19之影響而檢測氣液界面之位置。因此,能夠更高精度地檢測氣液界面之位置。再者,此處所言及之處理期間係指從處理液於噴出噴嘴12之內部流路14中靜止之狀態至處理液結束噴出而處理液再次靜止為止之期間。Furthermore, in the above example, the
<噴出前之氣泡>
且說,存在如下情形:當處理液停止噴出時無法適當地進行回吸處理,噴出噴嘴12之內部流路14內混入氣泡。圖10係模式性表示由相機35獲取之圖像資料IM1之一例之圖。該圖像資料IM1係於供給閥16關閉之閉合狀態下獲取。於圖10之例中,噴出噴嘴12之內部流路14中混入氣泡B1。即,於前次之塗佈處理時未適當地進行回吸處理,內部流路14中混入氣泡B1。氣泡B1形成於處理液內,於圖10之例中,將處理液分離為上側及下側。於此情形時,內部流路14中存在3個氣液界面。即,存在表示氣泡B1之上端面之氣液界面、表示氣泡B1之下端面之氣液界面、及表示處理液之前端面之氣液界面。<Bubble before spraying>
In addition, there are cases where the suction treatment cannot be performed properly when the treatment liquid stops ejecting, and air bubbles are mixed in the
此種情形時,藉由上述監視處理(步驟S3),處理器31檢測3個氣液界面之位置。如此檢測到複數個氣液界面之位置之情形時,可謂噴出噴嘴12之內部流路14中之處理液之狀態產生了異常。因此,於異常判定(步驟S35)中,處理器31判定是否檢測出複數個氣液界面之位置,當檢測出複數個氣液界面之位置時,判定為產生了異常。此時,處理器31將產生異常之內容通知給控制部140。控制部140根據該通知例如使報知部40報知該異常。In this case, the
<噴出中之氣泡檢測>
於上述例中,對處理液之噴出前之氣泡B1進行了敍述。但是,亦會有於處理液之噴出過程中氣泡混入供給配管18之情形。該氣泡與處理液一起於供給配管18中移動並進入至噴出噴嘴12之內部流路14中。並且,該氣泡於噴出噴嘴12之內部流路14中朝向噴出口13移動,從噴出口13釋出至外部。當該氣泡釋出時,處理液有可能向四方飛濺。<Bubble detection during ejection>
In the above example, the bubble B1 before the discharge of the treatment liquid was described. However, there may be cases where air bubbles are mixed into the
圖11係模式性表示由相機35獲取之圖像資料IM1之一例之圖。圖11中,示出了處理液從噴出噴嘴12之噴出口13噴出之期間(噴出期間)由相機35獲取之圖像資料IM1。圖11中,由相機35依次獲取之3個圖像資料IM1[j-1]~IM1[j+1]排列顯示。圖像資料IM1[j-1]係於最早時間點獲取之圖像資料IM1,圖像資料IM1[j+1]係於最晚時間點獲取之圖像資料IM1。於圖11之例中,示出了處理液噴出過程中之圖像資料IM1。FIG. 11 is a diagram schematically showing an example of the image data IM1 acquired by the
於圖像資料IM1[j-1]中,噴出噴嘴12之內部流路14由處理液填充,尚不包含氣泡B2。但是,於內部流路14之靠上游側產生了氣泡B2。該氣泡B2隨時間經過而朝向噴出口13移動。於圖像資料IM1[j]中,內部流路14中包含氣泡B2。該氣泡B2隨時間經過而朝向噴出口13移動,從噴出口13釋出至外部。於圖11之例中,圖像資料IM1[j+1]中,該氣泡B2已釋出至外部,內部流路14再次由處理液填充。In the image data IM1[j-1], the
於圖11之例中,圖像資料IM1[j]之內部流路14中之處理液與氣體之存在分佈狀態和圖像資料IM1[j-1]、IM1[j+1]之存在分佈狀態之任一者均不同。又,圖像資料IM1[j+1]理想而言與圖像資料IM1[j-1]一致。In the example of FIG. 11, the existence and distribution state of the processing liquid and gas in the
根據上述監視處理(步驟S3),當相機35獲取到圖像資料IM1[j]時,處理器31基於最近所獲取之圖像資料IM1[j-1]及當前圖像資料IM1[j],檢測圖像資料IM1[j-1]中之氣液界面之位置(步驟S33、S34)。然而,由於圖像資料IM1[j-1]中不包含氣泡B2,因此,不存在氣液界面。由此,於該時間點,未檢測氣液界面之位置。According to the above monitoring process (step S3), when the
繼而,當相機35獲取到圖像資料IM1[j+1]時,處理器31同樣地基於圖像資料IM1[j]、IM1[j+1]檢測圖像資料IM1[j]中之氣液界面之位置(步驟S33、S34)。圖像資料IM1[j]中包含氣泡B2,因此,處理器31檢測圖像資料IM1[j]中之氣泡B2之輪廓面之位置(氣液界面之位置)。Then, when the
如上所述,根據本監視處理,可檢測於處理液之噴出過程中產生於噴出噴嘴12之內部流路14中之氣泡B2。As described above, according to this monitoring process, the bubble B2 generated in the
然而,於上述具體例中,處理器31並非檢測當前之圖像資料IM1中之氣液界面之位置,而是檢測上述最近之圖像資料IM1中之氣液界面之位置。由此,處理器31於獲取到圖像資料IM1[j]時,雖該圖像資料IM1[j]中包含氣泡B2,但圖像資料IM1[j-1]中不包含氣泡B2,因此,無法檢測該氣泡B2之氣液界面之位置。處理器31如上所述於獲取到圖像資料IM1[j+1]時,檢測該氣泡B2之氣液界面之位置。如此,氣泡B2之檢測推遲。However, in the above specific example, the
因此,處理器31於處理液噴出之後,檢測當前之圖像資料IM1[n]而非最近之圖像資料IM1[n-1]中之氣液界面之位置。圖12係用以說明差量處理之圖。如圖12所示,處理器31使用基於最近之圖像資料IM1[n-1]之邊緣膨脹圖像IM3[n-1]、及基於當前之圖像資料IM1[n]之邊緣圖像IM2[n]進行差量處理。Therefore, the
邊緣圖像IM2[n]係對當前之圖像資料IM1[n]進行邊緣提取處理而獲取之圖像。此處,圖像資料IM1[n]係圖像資料IM1[j]。換言之,圖12表示相機35獲取到圖像資料IM1[j]時之差量處理。邊緣圖像IM2[n]例如記憶於第1處理記憶體32中。The edge image IM2[n] is an image obtained by performing edge extraction processing on the current image data IM1[n]. Here, the image data IM1[n] is the image data IM1[j]. In other words, FIG. 12 shows the difference processing when the
邊緣膨脹圖像IM3[n-1]係對最近之圖像資料IM1[n-1]依序進行邊緣提取處理及邊緣膨脹處理而獲取之圖像。此處,圖像資料IM1[n-1]係圖像資料IM1[j-1]。最近之邊緣膨脹圖像IM3[n-1]例如於前次之步驟S33中記憶於第2處理記憶體33中。The edge expansion image IM3[n-1] is an image obtained by sequentially performing edge extraction processing and edge expansion processing on the nearest image data IM1[n-1]. Here, the image data IM1[n-1] is the image data IM1[j-1]. The most recent edge expansion image IM3[n-1] is stored in the
於圖12之例中,邊緣膨脹圖像IM3[n-1]中包含相當於噴出噴嘴12之寬幅邊緣WE1、相當於經年要素19之寬幅邊緣WE2、相當於從噴出口13噴出之處理液之輪廓之寬幅邊緣WE4。邊緣圖像IM2[n]中包含表示噴出噴嘴12之邊緣E1、表示經年要素19之邊緣E2、表示從噴出口13噴出之處理液之輪廓之緣E4、及分別表示氣泡B2之上端面及下端面之邊緣E5。In the example of FIG. 12, the edge expansion image IM3[n-1] includes the wide edge WE1 corresponding to the
邊緣圖像IM2[n]內之邊緣E1、E2、E4分別表示與邊緣膨脹圖像IM3[n-1]內之寬幅邊緣WE1、WE2、WE4相同之對象,因此,藉由差量處理,於差量圖像IM4[n]中被消除。即,邊緣圖像IM2[n]內之除邊緣E5以外之邊緣E1、E2、E4之各像素之像素值於差量圖像IM4[n]中成為「0」(=1-1)。The edges E1, E2, and E4 in the edge image IM2[n] respectively represent the same objects as the wide edges WE1, WE2, and WE4 in the edge expansion image IM3[n-1]. Therefore, through the difference processing, It is eliminated in the difference image IM4[n]. That is, the pixel value of each pixel of the edges E1, E2, E4 other than the edge E5 in the edge image IM2[n] becomes "0" (=1-1) in the difference image IM4[n].
另一方面,寬幅邊緣WE1、WE2、WE4中分別與邊緣E1、E2、E4不重複之區域(以下分別稱為邊緣SE1、SE2、SE4)殘留於差量圖像IM4[n]中。邊緣SE1、SE2、SE4之各像素之像素值為「1」(=1-0)。On the other hand, regions of the wide edges WE1, WE2, and WE4 that do not overlap with the edges E1, E2, and E4, respectively (hereinafter referred to as edges SE1, SE2, and SE4, respectively) remain in the difference image IM4[n]. The pixel value of each pixel of the edges SE1, SE2, SE4 is "1" (=1-0).
邊緣圖像IM2[n]內之與邊緣E5對應之寬幅邊緣不存在於邊緣膨脹圖像IM3[n-1]中,因此殘留於差量圖像IM4[n]中。但是,邊緣E5之各像素之像素值為「-1」(=0-1)。The wide edge corresponding to the edge E5 in the edge image IM2[n] does not exist in the edge expansion image IM3[n-1], so it remains in the difference image IM4[n]. However, the pixel value of each pixel of the edge E5 is "-1" (=0-1).
如上所述,差量圖像IM4[n]中包含分別表示邊緣圖像IM2[n]中之氣泡B2之上端面及下端面之邊緣E5、及來自邊緣膨脹圖像IM3[n-1]之邊緣SE1、SE2、SE4。於該差量圖像IM4[n]中,邊緣SE1、SE2、SE4之各像素之像素值為「1」,邊緣E5之各像素之像素值為「-1」,其他像素之像素值為「0」。As mentioned above, the difference image IM4[n] includes the edge E5 representing the upper and lower end faces of the bubble B2 in the edge image IM2[n], and the edge expansion image IM3[n-1]. Edge SE1, SE2, SE4. In the difference image IM4[n], the pixel value of each pixel of the edge SE1, SE2, SE4 is "1", the pixel value of each pixel of the edge E5 is "-1", and the pixel value of other pixels is " 0".
處理器31基於差量圖像IM4[n]內之邊緣E5,檢測圖像資料IM1[n]中之處理液之氣液界面。此處,氣液界面之位置表示氣泡B2之輪廓面。作為具體處理之一例,處理器31切除來自邊緣膨脹圖像IM3[n-1]之邊緣SE1、SE2、SE4。總而言之,處理器31切除具有正值(「1」)像素值之像素。例如,處理器31亦可將該像素之像素值從「1」置換成「0」。該切除後之差量圖像IM4[n](切除圖像)中僅殘留邊緣E5。繼而,處理器31亦可對切除後之差量圖像IM4[n]之各像素之像素值進行絕對值處理。換言之,處理器31將邊緣E5之各像素之像素值從「-1」置換成「1」。處理器31基於具有正值(「1」)像素值之像素之位置,求出氣液界面之位置(氣泡B2之輪廓面之位置)。The
如上所述,處理器31於處理液噴出之前,檢測最近之圖像資料IM1[n-1]中之氣液界面而檢測回吸位置,並於處理液噴出之後,檢測當前之圖像資料IM1[n]中之氣液界面之位置,更迅速地檢測氣泡B2。As described above, the
圖13係表示上述處理之一例之流程圖。圖13相當於圖5之步驟S34之具體一例。處理器31判定當前是否為處理液噴出之後(步驟S340)。例如,控制部140亦可將表示供給閥16已從閉合狀態切換為打開狀態之資訊通知給處理器31。處理器31基於該資訊,判定當前是否為處理液噴出之後。Fig. 13 is a flowchart showing an example of the above-mentioned processing. Fig. 13 corresponds to a specific example of step S34 in Fig. 5. The
或者,處理器31亦可基於圖像資料IM1判定是否噴出處理液。例如,處理器31藉由對圖像資料IM1之圖像處理而判定有無處理液噴出。例如,處理器31基於圖像資料IM1中較噴出噴嘴12之噴出口13更靠下側之區域(以下稱為噴出區域)之像素值,判定有無處理液噴出。處理液噴出時之噴出區域之像素值與處理液未噴出時之噴出區域之像素值不同,因此,處理器31可基於噴出區域之像素值判定有無噴出。例如,當處理液噴出時,存在從照明36由處理液反射之光由相機35接收之情形。於此情形時,處理液噴出過程中之噴出區域之亮度值較處理液未噴出時之噴出區域之亮度值高。於此情形時,例如,處理器31於噴出區域之亮度值之平均高於基準亮度值時,判定為處理液已噴出。基準亮度值預先設定,且記憶於記憶媒體(例如第1處理記憶體32)中。Alternatively, the
於處理液尚未噴出之情形時(步驟S340:否(NO)),處理器31進行上述步驟S341~S343。藉此,處理器31於處理液噴出之前,使用基於最近之圖像資料IM1[n-1]之邊緣圖像IM2[n-1]、及基於當前之圖像資料IM1[n]之邊緣膨脹圖像IM3[n]進行差量處理(步驟S341)。藉此,相機35於供給閥16剛開始打開之後獲取到圖像資料IM1[n]時,處理器31可檢測上述最近之圖像資料IM1[n-1]中之氣液界面,即回吸位置。When the processing liquid has not been ejected yet (step S340: NO), the
又,於處理液噴出之後之情形時(步驟S340:是(YES)),處理器31使用邊緣膨脹圖像IM3[n-1]及邊緣圖像IM2[n]進行差量處理,獲取差量圖像IM4[n](步驟S344,亦參照圖12)。繼而,處理器31於差量圖像IM4[n]中切除來自邊緣膨脹圖像IM3[n-1]之邊緣(步驟S345)。繼而,處理器31對切除後之差量圖像IM4[n]之各像素進行絕對值處理(步驟S346)。藉此,於差量圖像IM4[n]中,邊緣E5之各像素之像素值從「-1」置換成「1」。處理器31基於差量圖像IM4[n]中具有正值像素值之像素,檢測氣液界面之位置(步驟S347)。In addition, in the case after the treatment liquid is ejected (step S340: Yes (YES)), the
<異常判定>
於處理液噴出之前,由於噴出噴嘴12之內部流路14中存在處理液之前端面(參照圖4),因此,若不產生氣泡B1,則檢測到一個氣液界面。另一方面,若產生氣泡B1(參照圖10),則會檢測到複數個氣液界面。由此,於處理液噴出之前,若檢測到複數個氣液界面,則可謂產生了異常。因此,處理器31於處理液噴出之前,當檢測到複數個氣液界面時,判定為產生了異常。<Abnormal judgment>
Before the treatment liquid is discharged, since the front end surface of the treatment liquid exists in the
與此相對,於正常之處理液噴出過程中,於噴出噴嘴12之內部流路14中不存在處理液之前端面,內部流路14被處理液填充。而且,若產生氣泡B2(參照圖11),則檢測到氣液界面。由此,於處理液噴出過程中,若檢測到氣液界面,則可謂產生了異常。因此,處理器31於處理液噴出過程中,當檢測到複數個氣液界面時,判定為產生了異常。In contrast, in the normal process liquid ejection process, there is no process liquid front end surface in the
圖14係表示上述動作之一例之流程圖。圖14相當於圖5之步驟S35之異常判定之具體一例。但是,於圖14之例中,省略了關於回吸位置之判定之步驟之圖示。Fig. 14 is a flowchart showing an example of the above-mentioned operation. FIG. 14 corresponds to a specific example of abnormality determination in step S35 in FIG. 5. However, in the example of FIG. 14, the illustration of the procedure for determining the suction position is omitted.
處理器31判定是否從噴出噴嘴12之噴出口13噴出處理液(步驟S350)。即,處理器31判定當前是否處於處理液噴出過程中。The
於未噴出處理液之情形時(步驟S350:否),處理器31判定是否檢測到複數個氣液界面(步驟S351)。當檢測到複數個氣液界面時,處理器31判定為產生了異常,對控制部140通知產生了異常之內容。控制部140根據該通知例如使報知部40報知異常(步驟S352)。當未檢測到複數個氣液界面時,處理器31不執行步驟S352。When the treatment liquid is not ejected (step S350: No), the
另一方面,於已噴出處理液之情形時(步驟S350:是),處理器31判定是否檢測到氣液界面(步驟S353)。當檢測到氣液界面時,處理器31判定產生了異常,控制部140通知產生了異常之內容。控制部140根據該通知例如使報知部40報知異常(步驟S354)。On the other hand, when the treatment liquid has been ejected (step S350: Yes), the
<處理液之噴出停止>
繼而,對處理液停止噴出時之作用進行說明。圖15係模式性表示由相機35獲取之圖像資料IM1之一例之圖。於圖15中,示出了由相機35依次獲取之3個圖像資料IM1[k-1]~IM1[k+1]。圖像資料IM1[k-1]係於最早之時間點獲取之圖像資料IM1,圖像資料IM1[k+1]係於最晚之時間點獲取之圖像資料IM1。於圖15之例中,示出了處理液停止噴出之前後之圖像資料IM1。<Stop spraying of treatment liquid>
Next, the action when the treatment liquid stops spraying will be explained. FIG. 15 is a diagram schematically showing an example of the image data IM1 acquired by the
圖像資料IM1[k-1]係於供給閥16打開之狀態下獲取之圖像資料IM1。於圖像資料IM1[k-1]中,處理液從噴出噴嘴12之噴出口13噴出,其內部流路14由處理液填充。The image data IM1[k-1] is the image data IM1 acquired when the
圖像資料IM1[k]係將供給閥16關閉且回吸閥17進行吸入動作後立即獲取之圖像資料IM1。於圖像資料IM1[k]中,處理液已經不再從噴出噴嘴12之噴出口13噴出,僅存在於其內部流路14中。處理液之前端面於內部流路14中位於較噴出口13更靠上側。由此,圖像資料IM1[k-1]及圖像資料IM1[k]之內部流路14中之處理液與氣體之存在分佈狀態相互不同。The image data IM1[k] is the image data IM1 obtained immediately after the
供給閥16閉合之後,處理液於內部流路14中靜止。由此,只要供給閥16閉合,處理液之前端面之位置便不變。因此,於圖像資料IM1[k]之下一個獲取到之圖像資料IM1[k+1]理想而言與圖像資料IM1[k]一致。After the
根據圖13之動作,於處理液噴出之後,處理器31檢測當前之圖像資料IM1[n]中之氣液界面(步驟S344~S347)。由此,當相機35獲取到圖像資料IM1[k]時,處理器31基於上述最近之圖像資料IM1[k-1]與當前之圖像資料IM1[k]之差量進行氣液界面之檢測處理(步驟S344~S347)。圖像資料IM1[k-1]、IM1[k]之內部流路14中之存在分佈狀態相互不同,因此,處理器31可檢測圖像資料IM1[k]之氣液界面之位置。According to the action of FIG. 13, after the processing liquid is ejected, the
總而言之,處理器31基於處理液靜止時之圖像資料IM1[k]獲取邊緣圖像IM2[k],基於處理液流動時之圖像資料IM1[k-1]獲取邊緣膨脹圖像IM3[k-1]。由此,處理器31藉由其等之差量處理,可檢測處理液靜止時之圖像資料IM1[k]中之氣液界面之位置。In a word, the
繼而,於相機35獲取到圖像資料IM1[k+1]時,處理器31亦基於上述最近之圖像資料IM1[k]與當前之圖像資料IM1[k+1]之差量進行氣液界面之檢測處理(步驟S344~S347)。然而,圖像資料IM1[k-1]、IM1[k]之內部流路14中之存在分佈狀態相同,因此,處理器31不檢測圖像資料IM1[k+1]之氣液界面之位置。以後相同。Then, when the
如上所述,可謂本監視處理中最後檢測到之氣液界面之位置表示處理液停止噴出後之回吸位置。因此,處理器31亦可將最後檢測到之氣液界面之位置特定為回吸位置。又,處理器31亦可進行該回吸位置是否成為基準範圍內之異常判定。As mentioned above, it can be said that the position of the gas-liquid interface last detected in this monitoring process represents the suck-back position after the treatment liquid stops spraying. Therefore, the
又,根據圖14之異常判定,於獲取到圖像資料IM1[k]之時間點,處理液未噴出,因此,進行步驟S351、S352之處理。由此,於處理液停止噴出時未適當進行回吸處理而導致氣泡B1混入之情形時,處理器31檢測到複數個氣液界面,因此,判定為產生了異常。In addition, according to the abnormality determination in FIG. 14, at the point in time when the image data IM1[k] is acquired, the processing liquid is not ejected. Therefore, the processing of steps S351 and S352 is performed. As a result, when the suction process is not performed properly when the treatment liquid is stopped and the bubbles B1 are mixed in, the
以上,對實施方式進行了說明,但該基板處理裝置只要不脫離其主旨便可於上述內容以外進行各種變更。本實施方式可於其揭示之範圍內將各實施方式自由組合,或對各實施方式之任意構成要素加以變化,或者於各實施方式中省略任意之構成要素。The embodiments have been described above, but this substrate processing apparatus can be modified in various ways other than the above as long as it does not deviate from the gist. This embodiment mode can freely combine the various embodiments within the scope of the disclosure, or change any constituent elements of the various embodiments, or omit any constituent elements in each embodiment.
例如,處理單元1未必限定於塗佈處理單元123或顯影處理單元DEV。處理單元1只要具有對基板W噴出處理液之透明之噴出噴嘴12即可。For example, the
又,於上述例中,處理器31基於處理期間(塗佈處理中)中由相機35獲取之2個圖像資料IM1之差量,檢測到氣液界面。然而,亦可將預先由相機35拍攝之基準圖像預先記憶於第2處理記憶體33。作為基準圖像,例如可採用處理液正常噴出過程中之圖像資料IM1(例如圖4之圖像資料IM1[i+1])。處理器31亦可基於處理期間中獲取到之圖像資料IM1與基準圖像之差量,檢測圖像資料IM1中之氣液界面。Furthermore, in the above example, the
又,於上述例中,相機35於處理期間之整個期間進行拍攝。然而,於應監視之期間僅為處理期間之一部分便足夠之情形時,相機35亦可僅於該處理期間之一部分進行拍攝。Also, in the above example, the
10:基板保持部 11:旋轉軸 12:噴嘴(噴出噴嘴) 13:噴出口 14:內部流路 15:處理液供給源 16:供給閥 17:回吸閥 18:供給配管 19:經年要素 30:圖像處理部 31:處理器 32:第1處理記憶體 33:第2處理記憶體 35:相機 36:照明 37:支持部 38:支持部 40:報知部 110:移載傳送部 111:匣盒載置台 120:處理部 121:分區 122:分區 123:塗佈處理單元 124:熱處理單元 125:平板 126:熱處理單元 127:塗佈處理單元 130:介面部 131:洗淨處理區塊 132:搬入搬出區塊 133a:洗淨處理單元 133b:洗淨處理單元 140:控制部 141:資料處理裝置 142:記憶媒體 A1:搬送空間 A2:搬送空間 B1:氣泡 B2:氣泡 C:匣盒 E1:邊緣 E2:邊緣 E3:邊緣 E4:邊緣 E5:邊緣 EXP:曝光機 H1:保持臂 H2:保持臂 IM1[i-1]~IM1[i+1]:圖像資料 IM1[n]:圖像資料 IM2[n]:邊緣圖像 IM3[n]:邊緣膨脹圖像 IM4[n]:差量圖像 LPa:搬入部 LPb:搬出部 PASS1:載置部 PASS2:載置部 PASS3:載置部 P-BF:載置兼緩衝部 S31~S36,S340~S347,S350~S354:步驟 SE1:邊緣 SE2:邊緣 SE3:邊緣 SE4:邊緣 T1:主搬送機構 T2:主搬送機構 T3a:搬送機構 T3b:搬送機構 TID:ID用搬送機構 TIF:IF用搬送機構 W:基板 WE1:寬幅邊緣 WE2:寬幅邊緣 WE3:寬幅邊緣 WE4:寬幅邊緣10: Board holding part 11: Rotation axis 12: Nozzle (spray nozzle) 13: spout 14: Internal flow path 15: Treatment liquid supply source 16: supply valve 17: suction valve 18: Supply piping 19: The elements of aging 30: Image Processing Department 31: processor 32: The first processing memory 33: The second processing memory 35: Camera 36: lighting 37: Support Department 38: Support Department 40: Notification Department 110: Transfer and Transport Department 111: cassette placement table 120: Processing Department 121: Partition 122: Partition 123: Coating processing unit 124: Heat treatment unit 125: tablet 126: Heat treatment unit 127: Coating processing unit 130: face 131: Wash processing block 132: Moving in and out of the block 133a: Washing processing unit 133b: Washing processing unit 140: Control Department 141: Data Processing Device 142: Memory Media A1: Transport space A2: Transport space B1: Bubble B2: bubbles C: Box E1: Edge E2: Edge E3: Edge E4: Edge E5: Edge EXP: Exposure machine H1: Keep arm H2: Keep arm IM1[i-1]~IM1[i+1]: Image data IM1[n]: Image data IM2[n]: Edge image IM3[n]: Inflated edge image IM4[n]: Difference image LPa: Move-in department LPb: Moving out department PASS1: Placement Department PASS2: Placement Department PASS3: Placement Department P-BF: Mounting and buffering part S31~S36, S340~S347, S350~S354: steps SE1: Edge SE2: Edge SE3: Edge SE4: Edge T1: Main transport mechanism T2: Main transport mechanism T3a: Transport mechanism T3b: Transport mechanism TID: ID transfer mechanism TIF: IF transfer mechanism W: substrate WE1: Wide edge WE2: Wide edge WE3: Wide edge WE4: Wide edge
圖1係概略表示基板處理裝置之構成之一例之圖。 圖2係概略表示處理單元之構成之一例之圖。 圖3係表示處理單元之動作之一例之流程圖。 圖4係模式性表示圖像資料之一例之圖。 圖5係表示監視處理之一例之流程圖。 圖6係模式性表示邊緣圖像之一例之圖。 圖7係模式性表示邊緣膨脹圖像之一例之圖。 圖8係表示氣液界面之檢測處理之一例之流程圖。 圖9是用以說明差量處理之圖。 圖10係模式性表示圖像資料之另一例之圖。 圖11係模式性表示圖像資料之另一例之圖。 圖12係用以說明差量處理之圖。 圖13係表示差量處理之一例之流程圖。 圖14係表示異常判定處理之一例之流程圖。 圖15係模式性表示圖像資料之另一例之圖。FIG. 1 is a diagram schematically showing an example of the structure of a substrate processing apparatus. Fig. 2 is a diagram schematically showing an example of the configuration of the processing unit. Fig. 3 is a flowchart showing an example of the operation of the processing unit. Fig. 4 is a diagram schematically showing an example of image data. Fig. 5 is a flowchart showing an example of monitoring processing. Fig. 6 is a diagram schematically showing an example of an edge image. Fig. 7 is a diagram schematically showing an example of an edge dilated image. Fig. 8 is a flowchart showing an example of the detection process of the gas-liquid interface. Fig. 9 is a diagram for explaining difference processing. Fig. 10 is a diagram schematically showing another example of image data. Fig. 11 is a diagram schematically showing another example of image data. Fig. 12 is a diagram for explaining the difference processing. Fig. 13 is a flowchart showing an example of difference processing. Fig. 14 is a flowchart showing an example of abnormality determination processing. Fig. 15 is a diagram schematically showing another example of image data.
S31~S36:步驟S31~S36: steps
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