TWI730185B - 結構的微影製造 - Google Patents

結構的微影製造 Download PDF

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Publication number
TWI730185B
TWI730185B TW106135258A TW106135258A TWI730185B TW I730185 B TWI730185 B TW I730185B TW 106135258 A TW106135258 A TW 106135258A TW 106135258 A TW106135258 A TW 106135258A TW I730185 B TWI730185 B TW I730185B
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TW
Taiwan
Prior art keywords
rlt
imprinting
substrate
fluid
imprinting fluid
Prior art date
Application number
TW106135258A
Other languages
English (en)
Chinese (zh)
Other versions
TW201827922A (zh
Inventor
維克拉姆杰 辛格
羅康
麥可奈文 米勒
楊書強
毅 許
Original Assignee
美商分子印記股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 美商分子印記股份有限公司 filed Critical 美商分子印記股份有限公司
Publication of TW201827922A publication Critical patent/TW201827922A/zh
Application granted granted Critical
Publication of TWI730185B publication Critical patent/TWI730185B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00769—Producing diffraction gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW106135258A 2016-10-18 2017-10-16 結構的微影製造 TWI730185B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662409533P 2016-10-18 2016-10-18
US62/409,533 2016-10-18

Publications (2)

Publication Number Publication Date
TW201827922A TW201827922A (zh) 2018-08-01
TWI730185B true TWI730185B (zh) 2021-06-11

Family

ID=61903808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106135258A TWI730185B (zh) 2016-10-18 2017-10-16 結構的微影製造

Country Status (6)

Country Link
US (4) US10274823B2 (enExample)
JP (1) JP6924828B2 (enExample)
KR (2) KR102326522B1 (enExample)
CN (1) CN109937127B (enExample)
TW (1) TWI730185B (enExample)
WO (1) WO2018075174A1 (enExample)

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US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
US10976483B2 (en) * 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings
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JP7837323B2 (ja) * 2020-08-28 2026-03-30 スリーエム イノベイティブ プロパティズ カンパニー ナノ構造化表面と囲まれた空隙とを含む物品、それを製造する方法、及び光学素子
US20230266594A1 (en) * 2020-09-08 2023-08-24 Sony Group Corporation Devices, systems, and methods for diffraction gratings
US11709422B2 (en) 2020-09-17 2023-07-25 Meta Platforms Technologies, Llc Gray-tone lithography for precise control of grating etch depth
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CN114114727A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 高透过、低反射的功能部件及其制备方法和应用
CN114100998A (zh) * 2021-10-12 2022-03-01 维达力实业（赤壁）有限公司 在基材表面制备微纳结构的方法和表面具有微纳结构的基材及其应用
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JP2023129913A (ja) * 2022-03-07 2023-09-20 ソニーグループ株式会社 導光板及び画像表示装置
WO2023229824A1 (en) 2022-05-27 2023-11-30 Applied Materials, Inc. Method to improve display efficiency and uniformity of ar waveguide
CN120322406A (zh) 2022-06-03 2025-07-15 奇跃公司 光学设备的纳米光刻中的压印技术
EP4519089A4 (en) * 2022-06-10 2025-07-23 Magic Leap Inc COMPENSATION FOR THICKNESS VARIATIONS IN SUBSTRATES FOR OPTICAL DEVICES
US20240085782A1 (en) * 2022-09-14 2024-03-14 Google Llc Residual layer thickness modulation in nanoimprint lithography
KR102815881B1 (ko) * 2022-11-29 2025-05-30 국립순천대학교산학협력단 패턴 마스터 몰드 제조 방법 및 패턴 형성용 롤러
CN116679369A (zh) * 2023-06-19 2023-09-01 慕德微纳(杭州)科技有限公司 一种衍射光学元件的同步分区加工方法
CN116819664B (zh) * 2023-06-19 2026-04-21 慕德微纳(杭州)科技有限公司 一种通过模板控制残胶层厚度的衍射光学元件加工方法
US20240427236A1 (en) * 2023-06-26 2024-12-26 Google Llc Process control pattern to improve nanoimprint detaching process
TWI875671B (zh) * 2024-10-21 2025-03-01 聯華電子股份有限公司 圖案化方法

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Publication number Priority date Publication date Assignee Title
US6842229B2 (en) * 2000-07-16 2005-01-11 Board Of Regents, The University Of Texas System Imprint lithography template comprising alignment marks
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7473090B2 (en) * 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
TW201518859A (zh) * 2013-07-12 2015-05-16 Canon Nanotechnologies Inc 用於壓印微影術之利用方向性圖案化模板的液滴圖案生成技術

Also Published As

Publication number Publication date
KR102326522B1 (ko) 2021-11-12
US10585350B2 (en) 2020-03-10
JP2019532513A (ja) 2019-11-07
KR102681074B1 (ko) 2024-07-02
US20200278606A1 (en) 2020-09-03
US20180107110A1 (en) 2018-04-19
WO2018075174A1 (en) 2018-04-26
JP6924828B2 (ja) 2021-08-25
CN109937127A (zh) 2019-06-25
US20190302611A1 (en) 2019-10-03
US10274823B2 (en) 2019-04-30
US20210041783A1 (en) 2021-02-11
CN109937127B (zh) 2021-06-08
US10802397B2 (en) 2020-10-13
TW201827922A (zh) 2018-08-01
US11307493B2 (en) 2022-04-19
KR20190058655A (ko) 2019-05-29
KR20210136180A (ko) 2021-11-16

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