TW202129834A - 覆板夾頭、使用方法、及製造物件的方法 - Google Patents
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Abstract
一種用於扣住覆板或模板的夾頭。夾頭包括形成在夾頭之表面上的幾何結構。幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者,使得穿透幾何結構和夾頭相鄰於幾何結構的區域之光的強度變化有所減少。
Description
本揭示關於基板處理,更特別而言關於半導體製造中的表面平坦化。
平坦化技術在製造半導體裝置時很有用。舉例而言,生成半導體裝置的過程包括對基板重複地添加和移除材料。此過程可以生產具有不規則高度變化(亦即拓樸)的層化基板,並且隨著添加更多層,基板高度變化可以增加。高度變化對於再將多層添加至層化基板的能力有負面的影響。分開來看,半導體基板(譬如矽晶圓)本身並非總是完美地平坦,並且可能包括初始的表面高度變化(亦即拓樸)。一種解決此問題的方法是在層化步驟之間將基板平坦化。多樣的微影圖案化方法得利於在平坦表面上的圖案化。在基於ArFi雷射的微影術,平坦化改善了聚焦深度(depth of focus, DOF)、臨界尺寸(critical dimension, CD)、臨界尺寸均勻性。於極紫外光(extreme ultraviolet, EUV)微影術,平坦化改善了特徵放置和DOF。於奈米壓印微影術(nanoimprint lithography, NIL),平坦化改善了在圖案轉移之後的特徵填充和CD控制。
平坦化技術有時稱為基於噴墨的調適性平坦化(inkjet-based adaptive planarization,IAP),其涉及在基板和覆板之間分配可聚合材料的可變液滴圖案,其中液滴圖案取決於基板拓樸而變化。然後將覆板帶去接觸可聚合的材料,之後材料在基板上聚合,再移除覆板。想要改善平坦化技術(包括IAP技術)以改善譬如整個晶圓處理和半導體裝置製造。
提供的是一種用於扣住覆板或模板的透光夾頭。夾頭包括形成在夾頭之表面上的幾何結構。幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者,使得穿透幾何結構和夾頭相鄰於幾何結構的區域之光的強度變化有所減少。幾何結構可能包括:平行表面部分,其平行於夾頭的表面;以及粗化表面,其從夾頭的表面延伸至平行表面。粗化邊緣部分可能包括:第一粗化邊緣,其在平行表面部分周圍;以及第二粗化邊緣,其在夾頭表面周圍。
幾何結構可能包括:複數個陸塊,其從表面延伸以界定夾頭的複數個區段;至少一槽道,其從夾頭的表面凹陷;至少一埠口,其延伸穿過夾頭;或這些結構的組合。夾頭的表面較佳而言是覆板或模板的支撐表面。
提供的是一種方法。於該方法,以包括幾何結構的透光夾頭來扣住覆板或模板。幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者。使覆板或模板前進以接觸分配在基板上之可造形的材料。然後從夾頭釋放覆板或模板,並且使光輻射穿過夾頭和覆板或模板,而在可造形的材料上進行固化過程。圓化邊角和粗化表面允許穿透幾何結構和夾頭相鄰於幾何結構的區域之光的強度變化有所減少。較佳但可選擇而言,用於固化可造形的材料之光包括紫外(UV)光。
也提供一種製造物件的方法。為了製造物件,可造形的材料分配在基板上,使被透光夾頭扣住的覆板前進而接觸可造形的材料。夾頭包括幾何結構,其包括圓化邊緣部分和粗化表面部分中的至少一者。然後從夾頭釋放覆板,接著使光輻射穿過夾頭和覆板或模板以固化可造形的材料。藉由圓化邊角和粗化表面中的至少一者,而減少穿透幾何結構和夾頭相鄰於幾何結構的區域之光的強度變化。
當搭配所附圖式和提供的請求項來閱讀以下本揭示之範例性實施例的詳述時,本揭示的這些和其他目的、特徵、優點將變得明顯。
<平坦化系統>
圖1示範設備100,它尤其可以用於使基板102上的膜平坦化。基板102可能耦合於基板夾頭104。基板夾頭104可能是但不限於真空夾頭、插銷型夾頭、溝槽型夾頭、靜電夾頭、電磁夾頭和/或類似者。
基板102和基板夾頭104可能由基板定位臺座106所進一步支撐。基板定位臺座106可能提供沿著x、y、z、θ、Ψ、ϕ軸中之一或更多者的平移和/或旋轉運動。基板定位臺座106、基板102、基板夾頭104也可能定位在基座上(未顯示)。基板定位臺座可能是定位系統的一部分。
與基板102隔開的是覆板108,其具有面對基板102的工作表面112。覆板108可能是由包括但不限於融熔矽石、石英、矽、有機聚合物、矽氧烷聚合物、矽酸硼玻璃、氟碳聚合物、金屬、硬化藍寶石和/或類似的材料所形成。於實施例,覆板可輕易透過UV光。表面112的面積尺寸一般而言相同或稍小於基板108的表面。覆板108的表面112可以包括平坦的接觸表面。於另一實施例,接觸表面可以包括特徵,其界定形成基板102上待形成之圖案基礎的任何原始圖案。
覆板108可能耦合於覆板夾頭118或被覆板夾頭118扣住。覆板夾頭118可能是但不限於真空夾頭、插銷式夾頭、凹槽型夾頭、靜電夾頭、電磁夾頭和/或其他類似的夾頭類型。覆板夾頭118可能建構成施加跨越覆板108而變化的應力、壓力和/或應變給覆板108。於實施例,覆板夾頭類似地可輕易透過UV光。覆板夾頭118可能包括例如基於區段的真空夾頭、致動器陣列、壓力囊…等的系統,其可以施加壓力差至覆板108的背面以使模板彎曲和變形。於一實施例,覆板夾頭118包括基於區段的真空夾頭,其可以施加壓力差至覆板的背面,而使覆板彎曲和變形,如在此所進一步詳述。
覆板夾頭118可能耦合於頭部120,其為定位系統的一部分。頭部120可能可移動地耦合於橋臺。頭部120可能包括一或更多個致動器,例如音圈馬達、壓電馬達、線性馬達、螺帽和螺桿馬達…等,其建構成至少在z軸方向和可能其他方向(譬如x、y、θ、Ψ、ϕ軸)而相對於基板102來移動覆板夾頭118。
設備100可能進一步包括流體分配器122。流體分配器122也可能可移動地耦合於橋臺。於實施例,流體分配器122和頭部120共享全部定位組件中的一或更多者。於替代選擇性實施例,流體分配器122和頭部120彼此獨立地移動。流體分配器122可能用於將小滴之液態可造形的材料124 (譬如可光固化之可聚合的材料)沉積到基板102上,而沉積材料的體積至少部分基於基板102的拓樸輪廓而在基板102的區域上變化。不同的流體分配器122可能使用不同的技術來分配可造形的材料124。當可造形的材料124是可噴射的,噴墨型分配器可能用於分配可造形的材料。舉例而言,熱噴墨、基於微機電系統(microelectromechanical system,MEMS)的噴墨、閥噴射、壓電噴墨是用於分配可噴射之液體的的常見技術。
設備100可能進一步包括固化系統,其包括輻射源126以將光化能量(舉例而言為UV輻射)沿著曝光路徑128而指引。頭部120和基板定位臺座106可能建構成將覆板108和基板102定位成與曝光路徑128疊加。在覆板108已接觸可造形的材料128之後,輻射源126沿著曝光路徑128來發送光化能量。圖1示範當覆板108不接觸可造形的材料124時的曝光路徑128。這麼做是為了示範,如此則可以輕易辨識個別組件的相對位置。熟於此技術者會了解當覆板108被帶去接觸可造形的材料124時,曝光路徑128不會有實質改變。
設備100可能進一步包括相機136,其定位成在平坦化過程期間隨著覆板108接觸可造形的材料124而觀看可造形的材料124之散布。圖1示範現場相機之成像視野的光軸138。如圖1所示範,設備100可能包括一或更多個光學組件(分色反射鏡、集束器、稜鏡、透鏡、反射鏡…等),其將光化輻射與待由相機136所偵測的光加以組合。相機136可能包括電荷耦合裝置(CCD)、感應器陣列、線型相機、光偵測器中的一或更多者,其建構成收集光,光的波長則顯示在覆板108底下且接觸可造形的材料124之區域與在覆板108底下但不接觸可造形的材料124之區域之間的對比。相機136可能建構成提供在覆板108底下之可造形材料124的散布和/或覆板108從固化可造形材料124的分離之影像。相機136也可能建構成測量干涉條紋,其隨著可造形的材料124在表面112和基板表面之間的間隙中散布而改變。
藉由與一或更多個組件和/或次系統(例如基板夾頭104、基板定位臺座106、覆板夾頭118、頭部120、流體分配器122、輻射源126和/或相機136)通訊的一或更多個處理器140 (控制器),則可能調節、控制和/或指引設備100。處理器140可能基於儲存在非暫態電腦記憶體142中之電腦可讀取程式裡的指令來運作。處理器140可能是或包括中央處理單元(CPU)、數學處理單元(MPU)、圖形處理單元(GPU)、特用積體電路(ASIC)、場可程式化閘陣列(FPGA)、數位訊號處理器(DSP)、通用型電腦中的一或更多者。處理器140可能是特建控制器,或者可能是調適成控制器的通用型運算裝置。非暫態電腦可讀取的記憶體範例包括但不限於隨機存取記憶體(RAM)、唯讀記憶體(ROM)、光碟(CD)、數位多用途光碟(DVD)、藍光碟(Blu-Ray)、硬碟、網路附接儲存器(networked attached storage,NAS)、連接內網之非暫態電腦可讀取的儲存裝置、連接外網之非暫態電腦可讀取的儲存裝置。
操作時,頭部120、基板定位臺座106、或此二者變化覆板118和基板102之間的距離以界定所欲空間(三維的實體限度),其填充了可造形的材料124。舉例而言,頭部120可能朝向基板移動並且施力至覆板108,使得覆板接觸和散布可造形的材料124之液滴,如在此進一步所述。
<平坦化過程>
平坦化過程包括示意顯示於圖2a~2c的步驟。如圖2a所示範,可造形的材料124以小滴的形式而分配到基板102上。如先前所討論,基板表面具有某種拓樸,其基於先前處理操作而可能已知,或者可能使用輪廓儀、原子力顯微鏡(AFM)、掃描式電子顯微鏡(SEM)或基於光學干涉效應的光學表面輪廓器(像是Zygo NewView 8200)來測量。沉積之可造形材料124的局部體積密度取決於基板拓樸而變化。覆板108然後定位成接觸可造形的材料124。
圖2b示範接觸後的步驟,其在覆板108已被帶去完全接觸可造形的材料124之後但在聚合過程開始之前。隨著覆板108接觸可造形的材料124,小滴合併而形成可造形的材料膜144,其填充了覆板108和基板102之間的空間。較佳而言,填充過程以均勻的方式來發生,而無任何空氣或氣泡陷於覆板108和基板102之間以使未填充缺陷最小化。可造形的材料124之聚合過程或固化可能以光化輻射(譬如UV輻射)來起始。舉例而言,圖1的輻射源126可以提供光化輻射,其使可造形的材料膜144熟化、固化和/或交聯,而在基板102上界定固化的平坦化層146。替代選擇而言,可造形的材料膜144之固化也可以藉由使用熱、壓力、化學反應、其他類型的輻射、或此等的任何組合而起始。一旦固化,則形成平坦化層146,便可以由此分開覆板108。圖2c示範分開覆板108之後在基板102上之固化的平坦化層146。基板和固化層然後可能接受製造裝置(物件)所已知的額外步驟和過程,舉例而言包括圖案化、固化、氧化、形成層、沉積、摻雜、平坦化、蝕刻、移除可造形的材料、切片、結合、封裝和類似者。基板可能做處理以生產複數個物件(裝置)。
<固化覆板和基板之間的平坦化材料>
如圖3所示,透光夾頭(特別是用於扣住模板的覆板夾頭118或夾頭118)可能包括複數個幾何結構,例如埠口305、一系列陸塊307、複數個槽道308,其整合至夾頭本體中。然而,在可造形的材料之固化期間,這些幾何特徵可能造成穿透夾頭的固化光有局部之非均勻的透光度。非均勻的透光度可以導致在固化期間有不平均的固化速率和材料收縮,並且影響用於蝕刻和其他後續過程之平坦化層的品質。下面關於作為範例性幾何特徵的槽道或陸塊來進一步詳述這些幾何結構所引起的非均勻透光度。
圖4a顯示槽道308的截面,其包括平行於覆板夾頭118之表面118a的底表面308b。槽道308也包括平滑側壁308s,其在夾頭118的底表面308b和表面118a之間延伸。槽道308也包括在夾頭118之表面118a的一對尖銳的上邊角或邊緣308a和在底表面308b的一對圓化下邊角308le。圖4b顯示形成在覆板夾頭118上之陸塊307的截面。陸塊307類似地包括平行於夾頭表面118a的頂表面307t以及在覆板夾頭的頂表面307t與表面118a之間延伸的平滑側壁307s,並且類似地具有在頂表面307t之一對尖銳的上邊角或邊緣307a和在夾頭118之表面118a的一對圓化下邊角307le。觀察到在槽道308和相鄰於槽道之區域而穿透夾頭118的光強度在尖銳邊緣具有二強度尖峰,並且在緊鄰於槽道308的側壁308s具有二個低強度區段。
在槽道之尖銳邊緣308a的強度尖峰係類似可歸因於在筆直邊緣之菲涅耳(Fresnel)繞射的強度分布。進一步而言,當光輻射穿過槽道308時,槽道308的側壁308s和底表面之間的圓化邊角308le作用成透鏡而使入射光重分布。藉由透鏡效應的光重分布則引起大區域的低透光度或低強度。菲涅耳繞射和透鏡效應的組合導致在固化期間抵達可造形材料的光強度有局部的大空間梯度。此非均勻的光穿透不利地影響可造形材料的固化,並且進一步影響所形成之平坦化層的品質。
圖5a顯示槽道308的截面,其結構使繞射效應和透鏡效應最小化,如此以改善穿透夾頭的光之透光度的均勻性。如所示,槽道308包括平行於覆板夾頭118之表面118a的底表面308b。槽道308也包括在夾頭118的底表面308b和表面118a之間延伸的側壁308s。為了減少尖銳邊緣所引起的繞射效應,在夾頭表面118a和側壁308s之間的上緣308ue以及在底表面308b和側壁308s之間的下緣308le都被圓化或倒角化。於一實施例,圓化邊緣308ue和308le的曲率半徑範圍近似在0.05毫米和1毫米之間。為了使透鏡效應最小化,側壁308s被使入射在上之光發散的粗糙表面所粗化。較佳但可選擇而言,側壁的粗糙度範圍近似在100奈米和1微米之間。要體會邊緣308a和308c的圓度範圍以及側壁308s的粗糙度範圍可能有所變化,此視槽道308的真實尺寸和穿透覆板夾頭118之光的特徵而定。
圖5b顯示形成在覆板夾頭118上之陸塊307的截面。陸塊307包括平行於夾頭表面118a的頂表面307t以及在覆板夾頭118的頂表面307t和表面118a之間延伸的側壁307s。類似於槽道308,頂表面307t和側壁307s之間的上緣307ue以及下緣307le是以較佳而言在0.05毫米和1毫米之間的曲率半徑所圓化。側壁307s被粗化成粗糙表面,其粗糙度在約100奈米和約1微米之間。圓化邊緣和粗化側壁的真實尺寸取決於陸塊307的尺寸和穿透光的特徵。
具有如圖5a或5b所示結構的夾頭可以用於具有如圖6流程圖所示範之步驟的方法。於步驟S501,提供包括幾何結構的透光夾頭。幾何結構包括至少圓化邊緣部分、粗化表面、或圓化邊緣部分和粗化表面二者。於步驟S502,以夾頭扣住覆板或模板。於步驟S503,使覆板或模板前進以接觸分配在基板上之可造形的材料,使得可造形的材料之正面可以從基板的中央前進到周邊。於步驟S904,可造形的材料然後藉由使光輻射穿過夾頭和覆板或模板而固化。以幾何特徵的圓化邊角和/或粗糙側壁而言,有效地減少了穿透幾何結構和相鄰於幾何結構的區域之光的強度變化。
具有圖5a和5b之結構的夾頭也可以用於製造物件。舉例而言,可造形的材料可以分配在基板上。覆板是以包括幾何結構的透光夾頭來扣住。幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者。使覆板前進以接觸分配在基板上之可造形的材料,使得可造形的材料之正面可以從基板的中央前進到周邊。然後可選擇地從夾頭釋放覆板,可造形的材料藉由使光輻射穿過夾頭而固化。藉由圓化邊角和粗化表面中的至少一者,而減少了穿透幾何結構和夾頭相鄰於幾何結構的區域之光的強度變化。
熟於此技術者鑒於本敘述將明白多樣方面的進一步修改和替代選擇性實施例。據此,本敘述祇是要解讀為示例性的。要了解在此所示和所述的形式是要當成實施例的範例。可能針對在此所示範和所述者而替換元件和材料、可能逆轉零件和過程、並且可能單獨利用特定的特徵,這些都是熟於此技術者在得利於本敘述之後所會明白。
100:設備
102:基板
104:基板夾頭
106:基板定位臺座
108:覆板
112:工作表面
118:覆板夾頭
118a:表面
120:頭部
122:流體分配器
124:可造形的材料
126:輻射源
128:曝光路徑
136:相機
138:光軸
140:處理器
142:非暫態電腦記憶體
144:可造形的材料膜
146:固化的平坦化層
305:埠口
307:陸塊
307a:上邊角或邊緣
307le:圓化下邊角
307s:側壁
307t:頂表面
307ue:上緣
308:槽道
308a:上邊角或邊緣
308b:底表面
308le:圓化下邊角
308s:側壁
308ue:上緣
S501~S504:使用覆板夾頭的方法
為了可以詳加理解本發明的特徵和優點,參考所附圖式示範的實施例則可能會有本發明之實施例的更特定敘述。然而,要注意所附圖式僅示範本發明的典型實施例,因此不是要視為其範圍的限制,因為本發明可能容許有其他同樣有效的實施例。
[圖1]是示範設備的圖解,其可以用於平坦化。
[圖2a到2c]示範平坦化過程。
[圖3]示範一實施例之多重區段的覆板夾頭。
[圖4a到4b]顯示覆板夾頭的幾何結構。
[圖5a到5b]顯示根據一實施例之覆板夾頭的幾何結構。
[圖6]是使用具有如圖5a和/或5b所示結構之覆板夾頭的方法流程圖。
除非另有所述,否則圖式全篇使用相同的元件符號和字符來表示示範之實施例的相同特徵、元件、組件或部分。再者,雖然本揭示現將參考圖式來詳述,但這是關於示例性實施例才這樣做。意欲可以對所述範例性實施例做出改變和修飾,而不偏離如所附請求項界定之本揭示的真實範圍和精神。
118:覆板夾頭
305:埠口
307:陸塊
308:槽道
Claims (15)
- 一種用於扣住覆板或模板的透光夾頭,其包括形成在該夾頭之表面上的幾何結構,其中該幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者,使得穿透該幾何結構和該夾頭相鄰於該幾何結構的區域之光的強度變化有所減少。
- 如請求項1的夾頭,其中該幾何結構包括:平行表面部分,其平行於該夾頭的該表面;以及該粗化表面部分,其從該夾頭的該表面延伸至該平行表面部分。
- 如請求項1的夾頭,其中該粗化邊緣部分包括:第一粗化邊緣,其在該平行表面部分周圍;以及第二粗化邊緣,其在該夾頭的該表面周圍。
- 如請求項1的夾頭,其中該幾何結構包括複數個陸塊,其從該表面延伸以界定該夾頭的複數個區段。
- 如請求項1的夾頭,其中該幾何結構包括至少一槽道,其從該夾頭的該表面凹陷。
- 如請求項1的夾頭,其中該幾何結構包括至少一埠口,其延伸穿過該夾頭。
- 如請求項1的夾頭,其中該夾頭的表面是該覆板或該模板的支撐表面。
- 一種方法,其包括: 以包括幾何結構的透光夾頭來扣住覆板或模板,該幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者; 使該覆板或該模板前進以接觸分配在基板上之可造形的材料; 從該夾頭釋放該覆板或該模板;以及 使光輻射穿過該夾頭和該覆板或該模板以固化該可造形的材料,其中藉由該圓化邊角和該粗化表面中的至少一者,而減少穿透該幾何結構和該夾頭相鄰於該幾何結構的區域之該光的強度變化。
- 如請求項8的方法,其中該光包括紫外(UV)光。
- 如請求項8的方法,其中該幾何結構包括:平行表面部分,其平行於該夾頭的表面;以及該粗化表面部分,其從該平行表面部分延伸至該夾頭的該表面。
- 如請求項10的方法,其中該粗化邊緣部分包括:第一粗化邊緣,其在該平行表面部分周圍;以及第二粗化邊緣,其在該夾頭的該表面周圍。
- 如請求項8的方法,其中該幾何結構包括複數個陸塊,其從該夾頭的表面延伸。
- 如請求項8的方法,其中該幾何結構包括槽道,其從該夾頭的表面凹陷。
- 如請求項8的方法,其中該幾何結構包括埠口,其延伸穿過該夾頭。
- 一種製造物件的方法,其包括: 將可造形的材料分配在基板上; 以透光夾頭來扣住覆板,該夾頭包括幾何結構,該幾何結構包括圓化邊緣部分和粗化表面部分中的至少一者; 使該覆板前進以接觸分配在該基板上之該可造形的材料; 從該夾頭釋放該覆板;以及 使光輻射穿過該夾頭和該覆板或該模板以固化該可造形的材料,其中藉由該圓化邊角和該粗化表面中的至少一者,而減少穿透該幾何結構和該夾頭相鄰於該幾何結構的區域之該光的強度變化。
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US11562924B2 (en) * | 2020-01-31 | 2023-01-24 | Canon Kabushiki Kaisha | Planarization apparatus, planarization process, and method of manufacturing an article |
US11656546B2 (en) | 2020-02-27 | 2023-05-23 | Canon Kabushiki Kaisha | Exposure apparatus for uniform light intensity and methods of using the same |
US11443940B2 (en) * | 2020-06-24 | 2022-09-13 | Canon Kabushiki Kaisha | Apparatus for uniform light intensity and methods of using the same |
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US6032997A (en) * | 1998-04-16 | 2000-03-07 | Excimer Laser Systems | Vacuum chuck |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US7790231B2 (en) * | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
JP4979941B2 (ja) | 2005-03-30 | 2012-07-18 | Hoya株式会社 | マスクブランクス用ガラス基板の製造方法、マスクブランクスの製造方法 |
US8198567B2 (en) * | 2008-01-15 | 2012-06-12 | Applied Materials, Inc. | High temperature vacuum chuck assembly |
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US8913230B2 (en) * | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
JP2012099172A (ja) | 2010-10-29 | 2012-05-24 | Showa Denko Kk | 磁気記録媒体用ガラス基板の製造方法 |
KR101309402B1 (ko) | 2011-08-04 | 2013-09-17 | 삼성전기주식회사 | 노광 장치 |
JP5776491B2 (ja) | 2011-10-24 | 2015-09-09 | 信越化学工業株式会社 | フォトマスク用、レチクル用又はナノインプリント用のガラス基板及びその製造方法 |
MX352740B (es) | 2013-03-15 | 2017-12-06 | Polaris Sensor Tech Inc | Polarímetro de imagen de infrarrojo de onda larga, y método de montaje. |
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US10580659B2 (en) | 2017-09-14 | 2020-03-03 | Canon Kabushiki Kaisha | Planarization process and apparatus |
US11402672B2 (en) * | 2018-05-03 | 2022-08-02 | X Development Llc | Quantum confined nanostructures with improved homogeneity and methods for making the same |
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