TWI728452B - Inspecting system and inspecting method - Google Patents
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Description
本揭示中所述實施例內容是有關於一種檢測技術,特別關於一種可應用於半導體檢測的檢測系統以及檢測方法。 The content of the embodiments described in this disclosure is related to a detection technology, and particularly to a detection system and a detection method that can be applied to semiconductor detection.
在晶片封裝過程中通常會注入封裝膠。由於封裝膠具有黏滯性,可能會使得過於接近的兩金線接觸而發生短路。另外,隨著半導體技術的發展,越來越多的晶片堆疊。這也會使得任意兩相鄰金線過於接近易發生短路的機率變高。在目前技術中,僅能針對單層的金線進行檢測。然而,如何檢測多層的金線是否過於接近,亦是本領域重要的議題之一。 Packaging glue is usually injected during the chip packaging process. Due to the viscosity of the encapsulant, two gold wires that are too close may contact each other and cause a short circuit. In addition, with the development of semiconductor technology, more and more wafers are stacked. This will also increase the probability that any two adjacent gold wires are too close to be short-circuited. In the current technology, only a single layer of gold wire can be tested. However, how to detect whether the multi-layer gold wires are too close is also one of the important issues in this field.
本揭示之一些實施方式是關於一種檢測系統。檢測系統包含一待測裝置、一第一攝像裝置以及一處理器。待測裝置包含至少一晶片、一第一金線以及一第二金線。第一金線以及第二金線設置於該至少一晶片上。第一攝像裝置 對待測裝置進行拍攝以產生複數張影像。處理器依據該些張影像產生待測裝置的複數三維影像。處理器依據該些三維影像判斷第一金線與第二金線之間的距離。 Some embodiments of the present disclosure are related to a detection system. The detection system includes a device to be tested, a first camera device, and a processor. The device under test includes at least one chip, a first gold wire, and a second gold wire. The first gold wire and the second gold wire are arranged on the at least one chip. First camera Shoot the device under test to generate multiple images. The processor generates a plurality of three-dimensional images of the device under test according to the images. The processor determines the distance between the first gold wire and the second gold wire according to the three-dimensional images.
在一些實施例中,處理器控制第一攝像裝置沿一方向移動,以使第一攝像裝置分別在該方向上的複數個位置對待測裝置進行拍攝以產生該些張影像。處理器基於一聚焦測距演算法使用該些張影像產生該些三維影像。 In some embodiments, the processor controls the first camera device to move in a direction, so that the first camera device shoots the device under test at a plurality of positions in the direction to generate the images. The processor uses the images to generate the three-dimensional images based on a focusing and ranging algorithm.
在一些實施例中,該至少一晶片設置於一電路板上。該方向與電路板的延伸平面垂直。 In some embodiments, the at least one chip is disposed on a circuit board. This direction is perpendicular to the extension plane of the circuit board.
在一些實施例中,第一攝像裝置包含一鏡頭組件以及一影像感測器。鏡頭組件搭配影像感測器設置。檢測系統更包含一光源以及一狹縫。狹縫搭配光源設置以使一照射光的照射範圍落於鏡頭組件的景深範圍。 In some embodiments, the first camera device includes a lens assembly and an image sensor. The lens assembly is set up with the image sensor. The detection system further includes a light source and a slit. The slit is arranged with the light source so that the irradiation range of an illuminating light falls within the depth of field range of the lens assembly.
在一些實施例中,檢測系統更包含一第二攝像裝置。處理器控制第一攝像裝置以及第二攝像裝置同步地移動,以使第一攝像裝置以及第二攝像裝置對待測裝置進行拍攝。第二鏡頭組件的聚焦位置與第一鏡頭組件的聚焦位置相同。 In some embodiments, the detection system further includes a second camera device. The processor controls the first camera device and the second camera device to move synchronously, so that the first camera device and the second camera device photograph the device under test. The focus position of the second lens assembly is the same as the focus position of the first lens assembly.
在一些實施例中,第一攝像裝置包含一鏡頭組件以及一影像感測器。鏡頭組件搭配影像感測器設置。鏡頭組件包含一第一反射鏡以及一第二反射鏡。當第一金線位於鏡頭組件的景深範圍時,來自第一金線的反射光依序被第二反射鏡以及第一反射鏡反射後被影像感測器接收。來自第二金線的反射光被鏡頭組件內的一吸光材料吸收。 In some embodiments, the first camera device includes a lens assembly and an image sensor. The lens assembly is set up with the image sensor. The lens assembly includes a first reflecting mirror and a second reflecting mirror. When the first gold line is located in the depth range of the lens assembly, the reflected light from the first gold line is sequentially reflected by the second mirror and the first mirror, and then received by the image sensor. The reflected light from the second gold wire is absorbed by a light-absorbing material in the lens assembly.
在一些實施例中,第一金線以及第二金線分別設置於兩晶片上。 In some embodiments, the first gold wire and the second gold wire are respectively disposed on the two chips.
本揭示之一些實施方式是關於一種檢測方法。檢測方法包含:藉由一攝像裝置對一待測裝置進行拍攝以產生複數張影像,其中待測裝置包含至少一晶片、一第一金線以及一第二金線,第一金線以及第二金線設置於該至少一晶片上;藉由一處理器依據該些張影像產生待測裝置的複數三維影像;以及藉由處理器依據該些三維影像判斷第一金線與第二金線之間的距離。 Some embodiments of the present disclosure are related to a detection method. The detection method includes: photographing a device under test by a camera device to generate a plurality of images, wherein the device under test includes at least one chip, a first gold wire and a second gold wire, the first gold wire and the second gold wire The gold wire is arranged on the at least one chip; a processor generates a plurality of three-dimensional images of the device under test based on the images; and the processor determines the difference between the first gold wire and the second gold wire based on the three-dimensional images The distance between.
在一些實施例中,藉由處理器產生該些三維影像的步驟包含:藉由處理器基於一聚焦測距演算法使用該些張影像產生該些三維影像。 In some embodiments, the step of generating the three-dimensional images by the processor includes: using the images to generate the three-dimensional images by the processor based on a focusing and ranging algorithm.
在一些實施例中,藉由攝像裝置產生該些張影像的步驟包含:藉由處理器控制攝像裝置沿一方向移動,以使攝像裝置分別在該方向上的複數個位置對待測裝置進行拍攝以產生該些張影像。 In some embodiments, the step of generating the images by the camera device includes: controlling the camera device to move in a direction by the processor, so that the camera device can shoot the device under test at a plurality of positions in the direction respectively. Generate these images.
綜上所述,藉由本揭示中的檢測系統以及檢測方法,可解決因光軸方向遮蔽而無法檢測多層金線之間是否過於接近的問題。 In summary, the detection system and detection method in the present disclosure can solve the problem of the inability to detect whether the multi-layer gold wires are too close due to the shielding of the optical axis.
100、200、300、400、500‧‧‧檢測系統 100, 200, 300, 400, 500‧‧‧Detection system
120‧‧‧待測裝置 120‧‧‧Device to be tested
122、124‧‧‧晶片 122, 124‧‧‧chip
126‧‧‧電路板 126‧‧‧Circuit board
140、180‧‧‧攝像裝置 140、180‧‧‧Camera device
142、182、542‧‧‧鏡頭組件 142, 182, 542‧‧‧ lens assembly
144、184‧‧‧影像感測器 144、184‧‧‧Image sensor
160‧‧‧處理器 160‧‧‧Processor
301‧‧‧光源 301‧‧‧Light source
302‧‧‧狹縫 302‧‧‧Slit
600‧‧‧檢測方法 600‧‧‧Detection method
M1、M2‧‧‧反射鏡 M1, M2‧‧‧Mirror
L1、L2‧‧‧鏡組 L1, L2‧‧‧Mirror group
S602、S604、S606‧‧‧步驟 S602, S604, S606‧‧‧Step
W1、W2‧‧‧金線 W1, W2‧‧‧Gold wire
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction
為讓本揭示之上述和其他目的、特徵、優點與實施例能夠更明顯易懂,所附圖式之說明如下: 第1A圖是依照本揭示一些實施例所繪示一檢測系統的示意圖;第1B圖是第1A圖的待測裝置以及攝像裝置的上視圖;第1C圖是第1A圖的檢測系統的操作示意圖;第1D圖是第1A圖的檢測系統的操作示意圖;第2圖是依照本揭示一些實施例所繪示一檢測系統的示意圖;第3圖是依照本揭示一些實施例所繪示一檢測系統的示意圖;第4圖是依照本揭示一些實施例所繪示一檢測系統的示意圖;第5A圖是依照本揭示一些實施例所繪示一檢測系統的操作示意圖;第5B圖是依照本揭示一些實施例所繪示一檢測系統的操作示意圖;第5C圖是依照本揭示一些實施例所繪示一反射鏡的示意圖;以及第6圖是依照本揭示一些實施例所繪示的一檢測方法的流程圖。 In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more comprehensible, the description of the accompanying drawings is as follows: Fig. 1A is a schematic diagram of a detection system according to some embodiments of the present disclosure; Fig. 1B is a top view of the device under test and the camera device in Fig. 1A; Fig. 1C is a schematic diagram of the operation of the detection system in Fig. 1A Figure 1D is a schematic diagram of the operation of the detection system of Figure 1A; Figure 2 is a schematic diagram of a detection system according to some embodiments of the present disclosure; Figure 3 is a schematic diagram of a detection system according to some embodiments of the present disclosure Figure 4 is a schematic diagram of a detection system according to some embodiments of the present disclosure; Figure 5A is a schematic diagram of the operation of a detection system according to some embodiments of the present disclosure; Figure 5B is according to some embodiments of the present disclosure The embodiment shows a schematic diagram of the operation of a detection system; Figure 5C is a schematic diagram of a mirror according to some embodiments of the present disclosure; and Figure 6 is a schematic diagram of a detection method according to some embodiments of the present disclosure flow chart.
下文係舉實施例配合所附圖式作詳細說明,但所提供之實施例並非用以限制本揭示所涵蓋的範圍,而結構操作之描述非用以限制其執行之順序,任何由元件重新組合 之結構,所產生具有均等功效的裝置,皆為本揭示所涵蓋的範圍。此外,圖式僅以說明為目的,並未依照原尺寸作圖。為使便於理解,下述說明中相同元件或相似元件將以相同之符號標示來說明。 The following is a detailed description of embodiments in conjunction with the accompanying drawings, but the provided embodiments are not used to limit the scope of the present disclosure, and the description of the structural operations is not used to limit the order of execution, any recombination of components The structure and the devices with equal effects are all within the scope of this disclosure. In addition, the drawings are for illustrative purposes only, and are not drawn in accordance with the original dimensions. To facilitate understanding, the same elements or similar elements in the following description will be described with the same symbols.
在本文中所使用的用詞『耦接』亦可指『電性耦接』,且用詞『連接』亦可指『電性連接』。『耦接』及『連接』亦可指二個或多個元件相互配合或相互互動。 The term "coupled" used in this article can also refer to "electrical coupling", and the term "connected" can also refer to "electrical connection". "Coupling" and "connection" can also refer to two or more components cooperating or interacting with each other.
請參考第1A圖。第1A圖是依照本揭示一些實施例所繪示一檢測系統100的示意圖。第1A圖繪示出檢測系統100的前視圖。如第1A圖所示,檢測系統100包含待測裝置120、攝像裝置140以及處理器160。處理器160耦接攝像裝置140。在一些實施例中,處理器160用以控制攝像裝置140對待測裝置120進行檢測。第1B圖是第1A圖的待測裝置120以及攝像裝置140的上視圖。為了畫面簡潔以及易於瞭解,第1B圖未繪示出處理器160。
Please refer to Figure 1A. FIG. 1A is a schematic diagram of a
在一些實施例中,待測裝置120包含晶片122、下層金線W1、上層金線W2以及電路板126。下層金線W1以及上層金線W2設置於晶片122上。晶片122設置於電路板126上。具體而言,下層金線W1以及上層金線W2的一端連接晶片122,而下層金線W1以及上層金線W2的另一端連接電路板126。以第1A圖示例而言,電路板126的延伸平面為XY平面。
In some embodiments, the device under
在一些實施例中,攝像裝置140包含鏡頭組件142以及影像感測器144。鏡頭組件142搭配影像感測器144
設置。在一些實施例中,鏡頭組件142包含一鏡筒以及至少一光學元件(例如:凸透鏡或反射鏡)。攝像裝置140用以對待測裝置120進行拍攝。在一些實施例中,攝像裝置140是以光學顯微鏡實現,但本揭示不以此為限。攝像裝置140具有光軸,光軸方向例如為方向Z。光軸方向(方向Z)與電路板126的延伸平面(XY平面)垂直。
In some embodiments, the
在一些實施例中,處理器160包含控制電路(圖未示)以及處理電路(圖未示)。處理器160的控制電路用以控制攝像裝置140沿光軸方向(方向Z)移動,且控制攝像裝置140對待測裝置120進行拍攝以產生複數張影像。處理器160的處理電路依據該些張影像產生待測裝置120的複數三維影像,且依據該些三維影像得知所有金線的位置。如此,便可判斷任兩金線之間的距離。在一些實施例中,攝像裝置140可配置於移動機構裝置上,而處理器160的控制電路可控制移動機構裝置以使攝像裝置140移動。
In some embodiments, the
具體而言,處理器160會控制攝像裝置140沿光軸方向(方向Z)移動。每次移動例如1微米。每次移動,處理器160都會控制攝像裝置140對待測裝置120進行拍攝。據此,假設攝像裝置140移動了1000次,將會產生1000張影像。接著,處理器160可採用例如聚焦測距(depth from focus;DFF)演算法對這些影像進行運算以產生待測裝置120的複數三維影像。據此,處理器160便可透過該些三維影像得知所有金線的位置,進而判斷任兩金線之間的距離。在一些實施例中,任一個三維影像可區分為複數個感興趣區
域(region of interest;ROI)。處理器160可逐一分析各感興趣區域中任兩金線之間的距離。在一些實施例中,當兩金線的距離等於小於20微米時,代表這兩條金線過於接近而易發生短路的情況。
Specifically, the
在上述實施例中,即使上層金線W2在光軸方向(方向Z)上有遮蔽到下層金線W1(如第1B圖所示),檢測系統100仍可檢測多層金線(下層金線W1以及上層金線W2)之間是否過於接近。
In the above embodiment, even if the upper gold wire W2 is shielded to the lower gold wire W1 in the optical axis direction (direction Z) (as shown in Figure 1B), the
需特別說明的是,檢測系統100的光源可為漫射光。此漫射光可為可見光或不可見光。而影像感測器144則搭配光源選用。另外,鏡頭組件142的口徑可設計為足以接收到下層金線W1的光線資訊。
It should be particularly noted that the light source of the
上述待測裝置120中金線的數量僅為示例的目的,各種適用的數量皆在本揭示的範圍內。舉例而言,待測裝置120可包含超過兩條金線。
The number of gold wires in the device under
請參考第1C圖以及第1D圖。第1C圖以及第1D圖是第1A圖的檢測系統100的操作示意圖。為了易於瞭解,第1C圖以及第1D圖繪示出檢測系統100的左側視圖。如前所述,處理器160會控制攝像裝置140在光軸方向(方向Z)上移動,以使攝像裝置140在光軸方向(方向Z)上的不同位置對待測裝置120進行拍攝,以產生複數張影像。舉例而言,第1C圖的攝像裝置140在較低的位置對待測裝置120進行拍攝,而第1D圖的攝像裝置140在較高的位置對待測裝置120進行拍攝。
Please refer to Figure 1C and Figure 1D. FIG. 1C and FIG. 1D are schematic diagrams of the operation of the
請參考第2圖。第2圖是依照本揭示一些實施例所繪示一檢測系統200的示意圖。第2圖繪示出檢測系統200的前視圖。第2圖的檢測系統200與第1A圖的檢測系統100之間的不同處在於,第2圖的檢測系統200包含多個堆疊設置的晶片,例如:晶片122以及晶片124。下層金線W1設置於晶片122上。上層金線W2設置於晶片124上。具體而言,下層金線W1的一端連接晶片122且下層金線W1的另一端連接電路板126。上層金線W2的一端連接晶片124且上層金線W2的另一端連接電路板126。第2圖的檢測系統200與第1A圖的檢測系統100具有相似的運作,故於此不再贅述。
Please refer to Figure 2. FIG. 2 is a schematic diagram of a
上述晶片的數量僅為示例的目的,各種適用的數量皆在本揭示的範圍內。舉例而言,檢測系統200可包含超過兩個堆疊設置的晶片。
The number of the above-mentioned wafers is for illustrative purposes only, and various applicable numbers are within the scope of the present disclosure. For example, the
請參考第3圖。第3圖是依照本揭示一些實施例所繪示一檢測系統300的示意圖。第3圖的檢測系統300與第1A圖的檢測系統100之間的不同處在於,檢測系統300更包含光源301以及狹縫302。狹縫302搭配光源301設置。舉例而言,狹縫302設置於光源301的出光側。狹縫302用以限制光源301的照射光的照射範圍,以使穿過狹縫302的照射光的照射範圍落於鏡頭組件142的景深範圍(depth of focus;DOF)。以第3圖示例而言,當鏡頭組件142的景深範圍為下層金線W1周圍的區域時,穿過狹縫302的照射光的照射範圍亦為下層金線W1周圍的區域。如此,可避免位於景深範圍外的金線(例如:上層金線W2)干擾影像品質。
第3圖的檢測系統300與第1A圖的檢測系統100具有相似的運作,故於此不再贅述。
Please refer to Figure 3. FIG. 3 is a schematic diagram of a
請參考第4圖。第4圖是依照本揭示一些實施例所繪示一檢測系統400的示意圖。第4圖的檢測系統400與第1A圖的檢測系統100之間的不同處在於,檢測系統400更包含攝像裝置180。攝像裝置180包含鏡頭組件182以及影像感測器184。鏡頭組件182搭配影像感測器184設置。在一些實施例中,攝像裝置180的光軸方向與攝像裝置140的光軸方向之間形成一夾角,並使鏡頭組件182的聚焦位置相同於鏡頭組件142的聚焦位置。處理器160控制攝像裝置140以及攝像裝置180同步地移動,以使攝像裝置140以及攝像裝置180皆對待測裝置120進行拍攝。攝像裝置180所拍攝的影像可用來補償攝像裝置140所拍攝的影像。以第4圖示例而言,當鏡頭組件142的聚焦位置為下層金線W1周圍的區域時,攝像裝置140所拍攝的影像可能會受到上層金線W2的干擾。而攝像裝置180所拍攝的影像並不會受到上層金線W2的干擾。因此,攝像裝置180所拍攝的影像可用來補償攝像裝置140所拍攝的影像。如此,處理器160可得到具有較佳影像品質的影像。
Please refer to Figure 4. FIG. 4 is a schematic diagram of a
上述攝像裝置的數量僅為示例的目的,各種適用的數量皆在本揭示的範圍內。舉例而言,檢測系統400可包含三個或超過三個攝像裝置。
The number of the above-mentioned imaging devices is only for the purpose of example, and various applicable numbers are within the scope of the present disclosure. For example, the
請參考第5A圖以及第5B圖。第5A圖以及第5B圖是依照本揭示一些實施例所繪示一檢測系統500的操作
示意圖。第5A圖的檢測系統500與第1A圖的檢測系統100之間的不同處在於,第5A圖的鏡頭組件542包含反射鏡M1以及反射鏡M2。請參考第5C圖。第5C圖是依照本揭示一些實施例所繪示反射鏡M2的示意圖。在一些實施例中,反射鏡M2為環繞鏡筒筒壁設置且中央部分為中空的反射鏡。另外,鏡頭組件542靠近晶片M1的一側設置有鏡組L1,且鏡頭組件542與影像感測器144之間設置有鏡組L2。在一些實施例中,鏡組L1以及鏡組L2分別以一凸透鏡實現,但本揭示不以此為限。鏡組L1以及鏡組L2的各種實現方式皆在本揭示的範圍內。以第5A圖示例而言,當下層金線W1位於鏡頭組件542的景深範圍時,來自下層金線W1的反射光從反射鏡M1以外的部分進入鏡頭組件542。藉由鏡組L1的配置,來自下層金線W1的反射光經過鏡組L1後會變成平行光。此平行光依序被反射鏡M2以及反射鏡M1所反射。接著,反射後的光線經過鏡組L2後會被影像感測器144接收。另外,藉由光學元件的配置,上層金線W2的反射光在進入鏡頭組件542後為非平行光。此非平行光會被鏡頭組件542內的吸光材料所吸收。如此,可避免上層金線W2干擾影像品質。相似地,以第5B圖示例而言,當處理器160控制攝像裝置140上移使得上層金線W2位於鏡頭組件542的景深範圍時,來自上層金線W2的反射光從反射鏡M1以外的部分進入鏡頭組件542,如第5B圖所示。藉由光學元件的配置,來自上層金線W2的反射光經過鏡組L1後會變成平行光。此平行光依序被反射鏡M2以及反射鏡M1所反射。接著,反射後
的光線經過鏡組L2會被影像感測器144接收。如前所述,攝像裝置140在不同位置拍攝到影像後,處理器160可依據該些張影像產生待測裝置120的複數三維影像且依據該些三維影像得知所有金線的位置。第5A圖以及第5B圖的檢測系統500與第1C圖以及第1D圖的檢測系統100具有相似的運作,故於此不再贅述。
Please refer to Figure 5A and Figure 5B. Figures 5A and 5B show the operation of a
請參考第6圖。第6圖是依照本揭示一些實施例所繪示的檢測方法600的流程圖。檢測方法600包含步驟S602、步驟S604以及步驟S606。在一些實施例中,檢測方法600被應用於第1A圖的檢測系統100中,但本揭示不以此為限。為了易於理解,檢測方法600將搭配第1A-1D圖進行討論。
Please refer to Figure 6. FIG. 6 is a flowchart of a
在步驟S602中,藉由攝像裝置140對待測裝置120進行拍攝以產生複數張影像。在一些實施例中,處理器160會控制攝像裝置140沿光軸方向(方向Z)移動,以使攝像裝置140分別在光軸方向(方向Z)上的不同位置對待測裝置120進行拍攝以產生對應於不同位置的複數張影像。
In step S602, the device under
在步驟S604中,藉由處理器160依據該些張影像產生待測裝置120的複數三維影像。在一些實施例中,處理器160採用聚焦測距演算法對攝像裝置140所拍攝的該些張影像進行運算以產生待測裝置120的該些三維影像。
In step S604, the
在步驟S606中,藉由處理器160依據該些三維影像判斷下層金線W1與上層金線W2之間的距離。在一些實施例中,當待測裝置120的該些三維影像被建構出來後,任
一個三維影像可區分為複數個感興趣區域。處理器160會逐一分析各感興趣區域,以判斷各感興趣區域中任兩金線之間的距離。
In step S606, the
上述檢測方法600的敘述包含示例性的操作,但檢測方法600的該些操作不必依所顯示的順序被執行。檢測方法600的該些操作的順序得以被變更,或者該些操作得以在適當的情況下被同時執行、部分同時執行或部分省略,皆在本揭示之實施例的精神與範圍內。
The above description of the
值得注意的是,在一些實施例中,檢測方法600亦可實作為一電腦程式。電腦程式儲存於記憶體中。當電腦程式被第1A圖中的處理器160、一電子裝置或一電腦所執行時,此執行裝置執行檢測方法600。電腦程式可被儲存於一非暫態電腦可讀取記錄媒體,例如一唯讀記憶體、一快閃記憶體、一軟碟、一硬碟、一光碟、一快閃碟、一隨身碟、一磁帶、一可從網路讀取的資料庫,或任何本揭示內容所屬技術領域中具通常知識者所能想到具有相同功能的記錄媒體。
It is worth noting that, in some embodiments, the
綜上所述,藉由本揭示中的檢測系統以及檢測方法,可解決因光軸方向遮蔽而無法檢測多層金線之間是否過於接近的問題。 In summary, the detection system and detection method in the present disclosure can solve the problem of the inability to detect whether the multi-layer gold wires are too close due to the shielding of the optical axis.
雖然本揭示已以實施方式揭露如上,然其並非用以限定本揭示,任何本領域具通常知識者,在不脫離本揭示之精神和範圍內,當可作各種之更動與潤飾,因此本揭示之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present disclosure has been disclosed in the above manner, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure The scope of protection shall be subject to the scope of the attached patent application.
100‧‧‧檢測系統 100‧‧‧Detection System
120‧‧‧待測裝置 120‧‧‧Device to be tested
122‧‧‧晶片 122‧‧‧chip
126‧‧‧電路板 126‧‧‧Circuit board
140‧‧‧攝像裝置 140‧‧‧Camera Device
142‧‧‧鏡頭組件 142‧‧‧lens assembly
144‧‧‧影像感測器 144‧‧‧Image sensor
160‧‧‧處理器 160‧‧‧Processor
W1、W2‧‧‧金線 W1, W2‧‧‧Gold wire
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction
Claims (8)
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05160233A (en) * | 1991-12-02 | 1993-06-25 | Shinkawa Ltd | Inspecting method for bonding wire |
JPH06307824A (en) * | 1993-04-23 | 1994-11-04 | Fujitsu Ltd | Method and device for inspecting shape of bonding wire |
JP2004259968A (en) * | 2003-02-26 | 2004-09-16 | Toyota Motor Corp | Device and method for inspecting bonding wire |
US20060170911A1 (en) * | 2004-12-21 | 2006-08-03 | Renesas Technology Corp. | Image pick-up inspection equipment and method |
JP5160233B2 (en) | 2004-12-10 | 2013-03-13 | エリコン・ソーラー・アーゲー・トリュプバッハ | Positioning device |
JP6307824B2 (en) | 2013-09-20 | 2018-04-11 | 凸版印刷株式会社 | Thermal transfer recording medium |
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JPH05160233A (en) * | 1991-12-02 | 1993-06-25 | Shinkawa Ltd | Inspecting method for bonding wire |
JPH06307824A (en) * | 1993-04-23 | 1994-11-04 | Fujitsu Ltd | Method and device for inspecting shape of bonding wire |
JP2004259968A (en) * | 2003-02-26 | 2004-09-16 | Toyota Motor Corp | Device and method for inspecting bonding wire |
JP5160233B2 (en) | 2004-12-10 | 2013-03-13 | エリコン・ソーラー・アーゲー・トリュプバッハ | Positioning device |
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