TWI722801B - Die bonder - Google Patents
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本發明係有關於一種黏晶機,尤指一種可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等問題之黏晶機。 The present invention relates to a die bonding machine, in particular to a type that can bond wafers with corresponding types of substrates according to the wafer level, and can solve the uneven heating, labor-consuming, and low production efficiency that exist in the traditional die bonding process. Chip bonding machine for other problems.
現有的黏晶機(die bonder),係利用取放模組吸取位於晶粒供應模組之晶粒,再將晶粒運送至一接合載台以與接合載台上的基板進行接合(bonding)。 The existing die bonder uses a pick-and-place module to pick up the die located in the die supply module, and then transport the die to a bonding stage to bond with the substrate on the bonding stage .
一片晶圓包含了許多晶粒,於理想狀況下,晶粒品質應該都是良好的,但因各種因素影響導致實際狀況不然,因此一般業者的做法是利用晶圓測試機對各晶粒進行測試,以區別出晶粒的品質。 A wafer contains many dies. Under ideal conditions, the quality of the dies should be good, but due to various factors, the actual condition is not the case. Therefore, the general industry practice is to use a wafer tester to test each die. , In order to distinguish the quality of the crystal grains.
最單純的測試結果是將晶粒區分為良好或不良二種,針對不良的晶粒,會將晶粒做上記號(墨記),取放模組會辨識記號而避開不良的晶粒,僅取用良好的晶粒,而被標記不良的晶粒則捨棄。 The simplest test result is to divide the die into good or bad. For the bad die, the die will be marked (ink mark), and the pick and place module will identify the mark and avoid the bad die. Only good dies are used, and badly marked dies are discarded.
然而,對於某些晶粒而言,並無法單純區分為良好或不良二種。例如針對記憶體而言,即使有部分損壞仍可使用,換言之,依是否損壞以及損壞的程度而言,可將記憶體區分為多種(至少三種)等級。 However, for some crystal grains, it is impossible to simply distinguish between good and bad. For example, the memory can be used even if it is partially damaged. In other words, the memory can be divided into multiple (at least three) levels according to whether it is damaged and the degree of damage.
針對上述多種等級之情況,傳統作法是將測試結果製作成一測試結果檔案。測試結果檔案內容可顯示每一晶粒的測試結果,取放模組則針對等級分批取放晶粒。例如,根據測試結果檔案顯示晶粒被區分為A~D四個等級時,取放模組會先將所有A等級的晶粒進行接合於基板的製程之後,再進行所有B等級的晶粒,而後依序處理C等級、D等級的晶粒。 In view of the above-mentioned multiple levels, the traditional method is to make the test results into a test result file. The test result file content can display the test result of each die, and the pick-and-place module picks and places the die in batches according to the grade. For example, when the test result file shows that the die is divided into four grades from A to D, the pick-and-place module will first process all the A-grade dies to the substrate before proceeding to all the B-grade dies. Then, the C-level and D-level crystal grains are processed in sequence.
由於在處理不同等級晶粒時,必須在接合載台上置放相對應於該等級晶粒的基板,因而耗費大量置換基板的工時,此外,等待晶粒與基板接合固化也必須耗費大量時間。上述種種因素都導致生產效率低。 Because when processing different grades of dies, the substrate corresponding to that grade must be placed on the bonding stage, which consumes a lot of man-hours to replace the substrate. In addition, it takes a lot of time to wait for the die and the substrate to bond and solidify. . All the above factors lead to low production efficiency.
為解決上述問題,部分業者的作法是先將不同等級的晶粒分開,而後採用兩條作業線分別負責A等級、B等級的晶粒。其係藉由一取放模組分別拾取A等級、B等級晶粒並送入不同的作業線,在同時進行與基板接合的製程。此方式雖然一次可同時處理兩顆晶粒的接合製程,但是必須投入設備成本及設備占據的空間。此外,取放模組取放晶粒的路徑加長,實際所能節省的工時有限。 In order to solve the above-mentioned problems, the practice of some manufacturers is to separate the different grades of dies, and then use two operation lines to be responsible for the A grade and B grade dies. It uses a pick-and-place module to pick up grade A and grade B dies and send them to different operating lines to simultaneously perform the process of bonding with the substrate. Although this method can process the bonding process of two dies at the same time, the equipment cost and the space occupied by the equipment must be invested. In addition, the path for the pick-and-place module to pick and place the die is lengthened, and the actual man-hours that can be saved are limited.
針對晶粒與基板接合的製程而言,由於不同晶粒具有不同厚度,且晶粒的態樣不同,因此對於黏晶製程的加熱器的選用也是一項重要的考量因素。 For the process of bonding the die and the substrate, since different die have different thicknesses and the state of the die is different, the selection of the heater for the die bonding process is also an important consideration.
例如,當晶粒較厚時,若是由晶粒底部或頂部單方向加熱,都會導致熱度分布不均。或者,當晶粒為多層式結構時,例如3D快閃記憶體(NAND),其屬於層層堆疊式結構,若由3D快閃記憶體(NAND)底部加熱,則會導致其頂部熱度不足,影響接合效果,然而若是加長加熱時間,則會導致底部受熱過度,使得製程品質惡化。 For example, when the crystal grains are thick, heating in one direction from the bottom or top of the crystal grains will cause uneven heat distribution. Or, when the die has a multi-layer structure, such as 3D flash memory (NAND), which belongs to a layer-by-layer structure, if the bottom of the 3D flash memory (NAND) is heated, it will cause insufficient heat at the top. The bonding effect is affected. However, if the heating time is prolonged, the bottom part will be overheated and the process quality will deteriorate.
據此,如何能有一種可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等問題之『黏晶機』,是相關技術領域人士亟待解決之課題。 According to this, how can there be a kind of "bonding die" that can bond the wafer to the corresponding type of substrate according to the wafer level, and can solve the problems of uneven heating, labor-consuming, and low production efficiency that exist in the traditional die-bonding process. "Operation" is a topic that people in the relevant technical fields need to solve urgently.
於一實施例中,本發明提出一種黏晶機,其包含:至少一接合載台,用以設置相同或不同類別之複數基板;一供應模組,用以設置至少一晶粒,晶粒具有一等級,等級對應於其中一基板之類別;一取放模組,設置於供應模組的上方,用以取放晶粒;一轉承模組,設置於供應模組與旋轉模組之間,用以承接由取放模組取放之晶粒;以及一旋轉模組,設置於接合載台之一側,旋轉模組包括至少一取放單元用以拾取晶粒,由取放單元將晶粒置放於相對應之類別之基板之表面。 In one embodiment, the present invention provides a die bonding machine, which includes: at least one bonding stage for setting a plurality of substrates of the same or different types; a supply module for setting at least one die, the die having One level, the level corresponds to the type of one of the substrates; one pick-and-place module is set above the supply module to pick and place the die; one transfer module is set between the supply module and the rotating module , Used to receive the die picked and placed by the pick-and-place module; and a rotary module, arranged on one side of the joint carrier, the rotary module includes at least one pick-and-place unit for picking up the die, The die is placed on the surface of the corresponding type of substrate.
1,1A:黏晶機 1,1A: Chip bonding machine
2~2D:晶粒 2~2D: Die
10:供應模組 10: Supply module
20,20A:取放模組 20, 20A: Pick and place module
21A,22A:取放頭 21A, 22A: Pick and place head
30,30A:轉承模組 30, 30A: transfer module
40,40A:旋轉模組 40, 40A: Rotating module
41:旋轉座 41: Rotating seat
42,42A:取放單元 42,42A: Pick and place unit
421:取放頭 421: Pick and Place Head
422:加熱器 422: heater
423:壓力控制器 423: Pressure Controller
50:接合載台 50: Joint carrier
50A:第一接合載台 50A: The first joint carrier
50B:第二接合載台 50B: The second joining stage
51:夾持元件 51: clamping element
60~60D:基板 60~60D: substrate
70,70A:加熱器 70, 70A: heater
81:第一視覺擷取單元 81: The first visual capture unit
82:第二視覺擷取單元 82: The second visual capture unit
83:第三視覺擷取單元 83: The third visual capture unit
90:壓合模組 90: Compression module
91:座體 91: Seat
92:壓頭 92: pressure head
921:壓力控制器 921: Pressure Controller
922:加熱器 922: heater
100:上膠模組 100: Glue module
102:黏膠 102: viscose
110:翻轉模組 110: flip module
120:沾膠模組 120: Glue module
130:頂出模組 130: eject module
131:頂出件 131: eject
C:第一軸向 C: first axis
圖1為本發明之一實施例之俯視架構示意圖。 FIG. 1 is a schematic top view of an embodiment of the invention.
圖2為圖1實施例之前視架構示意圖。 FIG. 2 is a schematic diagram of the front view architecture of the embodiment in FIG. 1.
圖3為本發明另一實施例之俯視架構示意圖。 FIG. 3 is a schematic top view of another embodiment of the invention.
圖4為圖3實施例之前視架構示意圖。 FIG. 4 is a schematic diagram of the front view architecture of the embodiment in FIG. 3.
圖5為本發明另一實施例之俯視架構示意圖。 FIG. 5 is a schematic top view of another embodiment of the invention.
圖6為圖1實施例搭配設置二接合載台之前視架構示意圖。 FIG. 6 is a schematic diagram of the front view structure of the embodiment of FIG. 1 with two bonding stages.
圖7為圖1實施例搭配設置二接合載台及壓合模組之前視架構示意圖。 FIG. 7 is a schematic diagram of the structure of the embodiment in FIG. 1 before being equipped with two bonding stages and a pressing module.
圖8為圖1實施例搭配設置二接合載台及上膠模組之前視架構示意圖。 FIG. 8 is a schematic view of the structure of the embodiment in FIG. 1 before being equipped with two bonding stages and a gluing module.
圖9為圖1實施例搭配不同加熱器之前視架構示意圖。 FIG. 9 is a schematic diagram of the front view structure of the embodiment of FIG. 1 with different heaters.
圖10為圖1實施例搭配旋轉模組之前視架構示意圖。 FIG. 10 is a schematic structural diagram of the front view of the embodiment in FIG. 1 with a rotating module.
以下將詳述本發明內容的各實施例,並配合圖式作為例示。除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,任何所述實施例的輕易替代、修改、等效變化都包含在本發明的範圍內,並以之後的專利範圍為準。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部這些特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免造成本發明不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是,圖式僅為示意之用,並非代表元件實際的尺寸或數量,除非有特別說明。 Hereinafter, each embodiment of the content of the present invention will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and easy substitutions, modifications, and equivalent changes of any of the embodiments are included in the scope of the present invention and will be covered by the following patents. Prevail. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific details are provided; however, the present invention may still be implemented under the premise of omitting some or all of these specific details. In addition, well-known steps or elements are not described in details to avoid unnecessary limitation of the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. It should be noted that the drawings are for illustration only, and do not represent the actual size or quantity of the components, unless otherwise specified.
請參閱圖1及圖2所示實施例,本發明提供之黏晶機1,包含一供應模組10、一取放模組20、一轉承模組30、一旋轉模組40及一接合載台50。
Please refer to the embodiment shown in FIGS. 1 and 2. The
供應模組10用以設置複數晶粒2~2D。該複數晶粒2~2D已經過晶圓測試機的測試且依晶粒2~2D的品質區分為不同等級並製作成一測試結果檔案。於本實施例中,晶粒2~2D分別代表五種不同等級,然不限於五種,依實際測試結果而定,也可能所有的晶粒都屬於同一種等級。
The
取放模組20設置於供應模組10的上方,用以取放晶粒2~2D。於供應模組10的上方設有一第一視覺擷取單元81用以擷取位於供應模組10之晶粒2~2D的影像資訊,並將視覺資訊係提供給取放模組20,由取放模組20依據該視覺資訊吸取位於供應模組10之晶粒2~2D。
The pick-and-
轉承模組30設置於供應模組10與旋轉模組40之間,圖1及圖2顯示轉承模組30承接了由取放模組20取放之晶粒2。於轉承模組30的上方設有一第二視覺擷取單元82用以擷取位於轉承模組30之晶粒2的影像資訊,並將該影像資訊提供給轉承模組30。旋轉模組40再依據該影像資訊吸取位於轉承模組30上之晶粒2。
The
旋轉模組40包括一旋轉座41,其以一第一軸向C為中心旋轉,第一軸向C垂直於水平面。於旋轉座41設有複數取放單元42用以吸取設置於轉承模組30上之晶粒2。當旋轉座41旋轉時,可同步驅動取放單元42旋轉並將所吸取之晶粒2運送並置放於接合載台50上之基板60之表面。
The rotating
接合載台50用以設置相同或不同類別之複數基板60~60D。接合載台50設有夾持元件51夾持於基板60~60D的相對二側邊,以使基板60~60D於接合載台50上保持定位。上述不同類別包括不同尺寸及/或不同材料,例如,圖1顯示的五張基板60~60D具有四種不同尺寸,至於基板60~60D則可能分屬五種不同材料,或是屬於相同的材料,或是分屬於二~四種不同的材料。
The
圖1顯示於旋轉座41等角設置共四組取放單元42,然不限於此,可依實際所需決定取放單元42的數量。此外,圖1顯示於接合載台50上設有五個基板60僅為示意,可依實際所需設計接合載台50的尺寸以及可
容納的基板60的數量。
FIG. 1 shows that a total of four groups of pick-and-
於本實施例中,取放單元42包括一取放頭421,取放頭421連接於一加熱器422及一壓力控制器423。加熱器422用以對取放單元42所取放之晶粒2加熱。壓力控制器423除了可以感應取放單元42取放晶粒2時所施加的壓力之外,其主要功能在於依據所感應的壓力控制取放單元42取放晶粒2時所施加的壓力,以使取放單元42於取放晶粒2施加適當的壓力,避免壓力過大或不足。可依所需設計是否設置加熱器422及壓力控制器423或僅設置其中之一。
In this embodiment, the pick-and-
請參閱圖2所示,於供應模組10之下方設有一頂出模組130,頂出模組130具有一頂出件131,用以將設置於供應模組10上之晶粒2上頂,以利於取放模組20拾取晶粒2。
Please refer to FIG. 2, an
請參閱圖3及圖4所示實施例,本發明提供之黏晶機1A,包含一供應模組10、一取放模組20、一轉承模組30A、一旋轉模組40A及一接合載台50。本實施例顯示旋轉模組40A的旋轉座41等分度設置共四組取放單元42A,每一組取放單元42A包括兩取放頭421,每一取放頭421分別連接於一加熱器422及壓力控制器423。各組吸取單元組42A之二取放頭421之排列方向與以一第一軸向C為中心形成的圓相切。可控制兩取放頭421同時或僅其中之一吸取晶粒2~2D。
Please refer to the embodiment shown in FIGS. 3 and 4, the
圖3顯示轉承模組30A承載二個不同等級的晶粒2、2C,基板60、60A分別黏合了不同等級的晶粒2A、2B。圖4顯示其中一組吸取單元組42A的二取放頭421分別吸取了不同等級的晶粒2、2B。
FIG. 3 shows that the
圖3及4的實施例說明,可分別控制每一組取放單元42A的兩個
取放頭421同時或分別取放晶粒2~2D,並由各個取放頭421透過所連接的加熱器422及壓力控制器423分別對於所吸取的晶粒2~2D進行加熱及控制所施加的壓力。
The embodiments of FIGS. 3 and 4 illustrate that the two pick-and-
如前所述,複數晶粒2~2D已經過晶圓測試機的測試且依晶粒2~2D的品質區分為不同等級並製作成一測試結果檔案。不同等級的晶粒2~2D必須接合於不同類別的基板60~60C。經由一控制單元(圖中未示出)電性連接黏晶機1,取放模組20可經由測試結果檔案內容判別出取放單元42A所取放之晶粒2~2D的等級,且判別出對應於該等級之晶粒2~2D之基板60~60C之位置,即可由取放單元42A將晶粒2~2D置放於相對應之類別之基板60~60C之表面。
As mentioned above, the plural dies 2~2D have been tested by the wafer tester and are classified into different levels according to the quality of the dies 2~2D and made into a test result file.
同理,若同時有二取放單元42A拾取具有二種等級之晶粒2~2D,且基板60~60D具有至少二種對應於該二種等級之二種類別,則每一類別之基板60~60D之表面上皆可置放有相對應之等級之一晶粒2~2D。
In the same way, if two pick-and-
於本實施例中,於接合載台50內設有一加熱器70,用以由基板60~60D之底部對基板60~60D及/或設置於基板60~60D上之晶粒2~2D加熱,以使晶粒2~2D與基板60~60D接合。在此之前,由於晶粒2~2D可經由取放單元42A的加熱器422進行預熱,因此可加快於接合載台50上與基板60~60D接合的速度。
In this embodiment, a
於接合載台50的上方設有一第三視覺擷取單元83用以擷取接合載台50之基板60~60D的接合影像資訊,並將接合影像資訊提供給旋轉模組40。
A third visual capturing
藉由前述第一視覺擷取單元81、第二視覺擷取單元82、第三
視覺擷取單元83監控晶粒2~2D由供應模組10被吸取至與基板60~60D接合之整體過程,包括晶粒2~2D與基板60~60D的相對位置,以維持製程的順利進行。可依所需移動第一視覺擷取單元81、第二視覺擷取單元82、第三視覺擷取單元83的位置,以順利擷取清晰的影像。
Through the aforementioned first
就轉承模組30A可承載二個不同等級的晶粒的狀況而言,除了搭配圖3所示單顆取放晶粒的取放模組20之外,亦可搭配如圖5所示,可控制同時取放兩顆晶粒或一次拾取一顆晶粒的取放模組20A。
Regarding the condition that the
請參閱圖5所示實施例,本發明提供之黏晶機1B,包含一供應模組10、一取放模組20A、一轉承模組30A、一旋轉模組40A及一接合載台50。
Please refer to the embodiment shown in FIG. 5, the
本實施例與圖3實施例之差異包括,取放模組20A具有二個取放頭21A、22A,可控制取放頭21A、22A同時作動以拾取二顆晶粒,或控制取放頭21A、22A個別作動以不同時拾取晶粒。
The difference between this embodiment and the embodiment in FIG. 3 includes that the pick-and-
如圖5所示,轉承模組30A上擺放了二顆晶粒2C,該二顆晶粒2C可由取放模組20A的二個取放頭21A、22A同時由供應模組10上拾取再同時擺放於轉承模組30A上;也可由取放頭21A、22A分別由供應模組10上拾取再分別或同時擺放於轉承模組30A上。
As shown in FIG. 5, two dies 2C are placed on the
而後,可由取放單元42A同時拾取轉承模組30A上的二顆晶粒2C,並將二顆晶粒2C同時置放於接合載台50上之基板60B之表面。關於本實施例所採用之旋轉模組40A的態樣,可參閱圖4所示,旋轉模組40A的旋轉座41等分度設置共四組取放單元42A,每一組取放單元42A包括兩取放頭421,每一取放頭421分別連接於一加熱器422及壓力控制器423。
Then, the pick-and-
圖5實施例利用具有二個取放頭21A、22A的取放模組20A可一次拾取二顆晶粒之目的在於,當晶粒的厚度較薄時,必須耗費較多的時間挑揀晶粒,因此利用具有二個取放頭21A、22A的取放模組20A一次拾取二顆晶粒,可縮短時取晶粒的時間;且若當所拾取的二顆晶粒的等級相同時,即可將二顆晶粒同時置放於同一基板上,更進一步地縮短黏晶時間,提供生產效率。
The embodiment of FIG. 5 uses the pick-and-
然而,如前所述,即使取放模組20A可同時拾取兩顆晶粒,但亦可控制取放頭21A、22A僅其中一作動。例如,圖5同時揭露於基板60上放置有兩顆晶粒2A,該兩顆晶粒2A可以是由取放模組20A的二個取放頭21A、22A同時由供應模組10上拾取再同時擺放於轉承模組30A上,而後再由取放單元42A同時拾取再擺放於基板60上。或者,該兩顆晶粒2A可以是由取放頭21A、22A分別單獨拾取後,單獨擺放於轉承模組30A上,而後再由取放單元42A同時拾取再擺放於基板60上。
However, as mentioned above, even if the pick-and-
同理,圖2所示頂出模組130亦可應用於圖5的供應模組10。為了搭配具有兩個取放頭21A、22A可同時拾取兩顆晶粒的取放模組20A,頂出模組130可設置二頂出件131,用以將設置於供應模組10上之二顆晶粒同時上頂,以利於取放模組20A同時拾取二顆晶粒,提高晶粒取放的效率。然而,頂出模組130設置的二頂出件131可控制僅其中之一作動,不限於同時作動。
In the same way, the
請參閱圖6所示實施例,本實施例與圖2實施例的主要差異在於本實施例設有一第一接合載台50A與一第二接合載台50B,第一接合載台50A與第二接合載台50B可輪替地承接取放單元42運送之晶粒2~2D。
Please refer to the embodiment shown in FIG. 6, the main difference between this embodiment and the embodiment in FIG. 2 is that this embodiment has a
例如,當第一接合載台50A的基板60皆承接所有晶粒2~2D後,則移至一旁,換由第二接合載台50B的基板60~60D承接晶粒2。移至一旁的第一接合載台50A上的基板60與晶粒2B、2D可由加熱器70繼續加熱,而在等待第一接合載台50A上的基板60與晶粒2B、2D完全接合固化的過程中,第二接合載台50B上的基板60可進行承接晶粒2~2D的製程。如此可充分利用因等待基板60與晶粒2~2D完全接合固化而耗費的時間,提高生產效率。
For example, when the
請參閱圖7所示實施例,本實施例與圖6實施例的主要差異在於本實施例更搭配一壓合模組90。壓合模組90具有一座體91,於座體91底部設有複數壓頭92。每一壓頭92包括一壓力控制器921及一加熱器922。壓頭92的位置對應於位於基板60上之晶粒2~2D的位置。
Please refer to the embodiment shown in FIG. 7. The main difference between this embodiment and the embodiment in FIG. 6 is that this embodiment is further equipped with a
當第一接合載台50A的基板60皆承接所有晶粒2~2D(圖7僅標示出二晶粒2、2D)後,則移至一旁,換由第二接合載台50B的基板60承接晶粒2~2D。藉由壓合模組90對於第一接合載台50A的基板60上的晶粒2~2D施壓及加熱。各壓頭92分別壓合於相對應的晶粒2上,可由各壓力控制器921感應並控制壓頭92對晶粒2施加的壓力,不致施加過大或不足的壓力於晶粒2~2D上,且由各加熱器922可對所施壓的晶粒2~2D及/或晶粒2~2D所置放之基板60加熱。
When the
換言之,第一接合載台50A的基板60於承接晶粒2~2D時,可進行第一階段的「預壓」,並由第一接合載台50A的加熱器70加熱。當第一接合載台50A移至一旁後,再進行第二階段的「主壓」,由壓合模組90加壓並由加熱器922加熱。在等待第一接合載台50A上的基板60與晶粒
2~2D完全接合固化的過程中,第二接合載台50B上的基板60可進行承接晶粒2~2D的製程。如此可充分利用因等待基板60與晶粒2~2D完全接合固化所耗費的時間,提高生產效率。
In other words, when the
必須說明的是,於圖1至圖7實施例中之晶粒2~2D,在其與基板60~60D接觸之一面已具有黏膠,經由加熱器422、加熱器922及加熱器70的加熱使原本附著於晶粒2~2D上的黏膠熔化,即可使晶粒2~2D與基板60~60D相接合,因此不需要另外上膠。然而對於不具有黏膠的晶粒2~2D而言,則需要施加黏膠,例如浸漬(Dipping)、點膠(Dispenser、Syringe Transfer)、戳印(Stamping)或網印(Screen Printing)其中之一。
It must be noted that the
請參閱圖8所示實施例,本實施例與圖6實施例的主要差異在於本實施例搭配一上膠模組100。上膠模組100呈現針筒型態,可將黏膠102點放於基板60表面相對應需要設置晶粒2~2D之位置。如圖8所示,當第一接合載台50A的基板60於承接晶粒2~2D(圖8僅標示出二晶粒2B、2D)時(於此之前,第一接合載台50A的基板60已經由上膠模組100完成點膠),可由上膠模組100對第二接合載台50B上的基板60進行點膠。當第一接合載台50A的基板60皆承接所有晶粒2~2D後,移至一旁,換由第二接合載台50B的基板60承接晶粒2~2D,如此可充分利用因等待點膠所耗費的時間,提高生產效率。
Please refer to the embodiment shown in FIG. 8. The main difference between this embodiment and the embodiment in FIG. 6 is that this embodiment is equipped with a
此外,於本實施例中,第一接合載台50A與第二接合載台50B內不須設置加熱器,以避免黏膠102受熱而固化。
In addition, in this embodiment, the
請參閱圖9所示實施例,本實施例與圖2實施例的主要差異在於本實施例的加熱器70A設置於接合載台50之上方,用以由基板60之頂部
對基板60及/或設置於基板60上之晶粒2~2D(圖9僅標示出二晶粒2B、2D)加熱。
Please refer to the embodiment shown in FIG. 9. The main difference between this embodiment and the embodiment in FIG. 2 is that the
關於圖9所示將加熱器70A設置於接合載台50上方之實施例,同樣適用於圖6至圖8設有第一接合載台50A與第二接合載台50B的架構。
Regarding the embodiment in which the
此外,關於圖2至圖9分別所示之加熱器422、加熱器922、加熱器70、加熱器70A的種類不限,可為雷射加熱器、超音波加熱器或遠紅外線加熱器其中之一。
In addition, the types of
請參閱圖10所示實施例,本實施例適用於需要沾膠的晶粒。本實施例與圖2實施例的主要差異在於本實施例更包括一翻轉模組110及一沾膠模組120。翻轉模組110設置於取放模組20與轉承模組30之間,用以承接由取放模組20取放之晶粒2~2D,且翻轉一角度後,將晶粒2~2D置放於轉承模組30上。一般而言,翻轉模組110翻轉之角度可為180度。翻轉模組110之作用在於將晶粒2~2D需要沾膠之一面朝下,以利於沾膠製程。
Please refer to the embodiment shown in FIG. 10, this embodiment is suitable for the die that needs to be glued. The main difference between this embodiment and the embodiment in FIG. 2 is that this embodiment further includes a
沾膠模組120設置於旋轉模組40的下方,用以提供黏膠。取放單元42拾取轉承模組30上之晶粒2後,將晶粒2浸漬於沾膠模組120中,使晶粒2之一面附著黏膠。而後,再由取放單元42將沾有黏膠的晶粒2置放於接合載台50上之基板60之表面,即可由加熱器70對基板60與晶粒2進行接合固化,圖10顯示基板60上已接合固化一晶粒2D。
The glue-dipping
本發明圖1至圖10揭露本發明不同實施例架構,而各架構皆具有一共同特點,於黏晶製程中,基板於接合載台上保持定位。例如圖1及圖2顯示,於晶粒2~2D被移動的過程中,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖3及圖4顯示,於晶粒2~2D被移動的過
程中,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖5顯示,無論是於基板設置一或兩顆晶粒,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖6~圖8顯示,基板60可與對應之接合載台50A、50B同步移動,但是基板60於對應之接合載台50A、50B上始終保持定位。例如圖9及圖10顯示,於晶粒2~2D被移動的過程中,基板60始終位於接合載台50上,基板60無須移動。
FIG. 1 to FIG. 10 of the present invention disclose the architecture of different embodiments of the present invention, and each architecture has a common feature. During the die bonding process, the substrate is kept in position on the bonding stage. For example, FIG. 1 and FIG. 2 show that during the process of moving the
綜上所述,本發明所提供之黏晶機,圖2至圖10顯示本發明不同實施例,然而都不脫離圖2所示基本架構,亦即,可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等缺失。 In summary, the die bonder provided by the present invention, Figures 2 to 10 show different embodiments of the present invention, but do not deviate from the basic structure shown in Figure 2, that is, according to the wafer level of the wafer and phase Corresponding types of substrates are joined together, and can solve the problems of uneven heating, labor-consuming, and low production efficiency in the traditional die bonding process.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
1:黏晶機 1: Chip bonding machine
2~2D:晶粒 2~2D: Die
10:供應模組 10: Supply module
20:取放模組 20: Pick and place module
30:轉承模組 30: Transfer module
40:旋轉模組 40: Rotating module
41:旋轉座 41: Rotating seat
42:取放單元 42: Pick and place unit
50:接合載台 50: Joint carrier
51:夾持元件 51: clamping element
60~60D:基板 60~60D: substrate
81:第一視覺擷取單元 81: The first visual capture unit
82:第二視覺擷取單元 82: The second visual capture unit
83:第三視覺擷取單元 83: The third visual capture unit
C:第一軸向 C: first axis
Claims (20)
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TW201324665A (en) * | 2011-09-16 | 2013-06-16 | Hitachi High Tech Instr Co Ltd | Die Bonder and Bonding Method |
TW201519332A (en) * | 2013-11-08 | 2015-05-16 | Gallant Micro Machining Co Ltd | High accuracy die bonding apparatus with high yield |
TW201620060A (en) * | 2014-11-24 | 2016-06-01 | 均華精密工業股份有限公司 | Wafer mounted apparatus with high yield and method thereof |
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TW201324665A (en) * | 2011-09-16 | 2013-06-16 | Hitachi High Tech Instr Co Ltd | Die Bonder and Bonding Method |
TW201519332A (en) * | 2013-11-08 | 2015-05-16 | Gallant Micro Machining Co Ltd | High accuracy die bonding apparatus with high yield |
TW201620060A (en) * | 2014-11-24 | 2016-06-01 | 均華精密工業股份有限公司 | Wafer mounted apparatus with high yield and method thereof |
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