TWI722801B - Die bonder - Google Patents

Die bonder Download PDF

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TWI722801B
TWI722801B TW109105577A TW109105577A TWI722801B TW I722801 B TWI722801 B TW I722801B TW 109105577 A TW109105577 A TW 109105577A TW 109105577 A TW109105577 A TW 109105577A TW I722801 B TWI722801 B TW I722801B
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die
pick
module
place
substrate
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TW109105577A
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TW202133294A (en
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石敦智
語尚 林
劉黃頌凱
施景翔
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均華精密工業股份有限公司
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Abstract

A die bonder is disclosed, which includes at least one bonding carrier, a supplying module, a picking and placing module, a station module and a rotation module. The bonding carrier is for disposing substrates which have at least one category. The supplying module is for supplying at least one die which has a grade that is corresponding to the category of the substrates. The picking and placing module is disposed above the supplying module and for picking and placing die. The station module is disposed between the supplying module and rotation module, which is for receiving die from picking and locating module. The rotation module is disposed next to the bonding carrier and has at least one picking and placing unit for picking and placing at least one die on one of the substrates which has a category that is corresponding to the grade of die.

Description

黏晶機Bonding machine

本發明係有關於一種黏晶機,尤指一種可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等問題之黏晶機。 The present invention relates to a die bonding machine, in particular to a type that can bond wafers with corresponding types of substrates according to the wafer level, and can solve the uneven heating, labor-consuming, and low production efficiency that exist in the traditional die bonding process. Chip bonding machine for other problems.

現有的黏晶機(die bonder),係利用取放模組吸取位於晶粒供應模組之晶粒,再將晶粒運送至一接合載台以與接合載台上的基板進行接合(bonding)。 The existing die bonder uses a pick-and-place module to pick up the die located in the die supply module, and then transport the die to a bonding stage to bond with the substrate on the bonding stage .

一片晶圓包含了許多晶粒,於理想狀況下,晶粒品質應該都是良好的,但因各種因素影響導致實際狀況不然,因此一般業者的做法是利用晶圓測試機對各晶粒進行測試,以區別出晶粒的品質。 A wafer contains many dies. Under ideal conditions, the quality of the dies should be good, but due to various factors, the actual condition is not the case. Therefore, the general industry practice is to use a wafer tester to test each die. , In order to distinguish the quality of the crystal grains.

最單純的測試結果是將晶粒區分為良好或不良二種,針對不良的晶粒,會將晶粒做上記號(墨記),取放模組會辨識記號而避開不良的晶粒,僅取用良好的晶粒,而被標記不良的晶粒則捨棄。 The simplest test result is to divide the die into good or bad. For the bad die, the die will be marked (ink mark), and the pick and place module will identify the mark and avoid the bad die. Only good dies are used, and badly marked dies are discarded.

然而,對於某些晶粒而言,並無法單純區分為良好或不良二種。例如針對記憶體而言,即使有部分損壞仍可使用,換言之,依是否損壞以及損壞的程度而言,可將記憶體區分為多種(至少三種)等級。 However, for some crystal grains, it is impossible to simply distinguish between good and bad. For example, the memory can be used even if it is partially damaged. In other words, the memory can be divided into multiple (at least three) levels according to whether it is damaged and the degree of damage.

針對上述多種等級之情況,傳統作法是將測試結果製作成一測試結果檔案。測試結果檔案內容可顯示每一晶粒的測試結果,取放模組則針對等級分批取放晶粒。例如,根據測試結果檔案顯示晶粒被區分為A~D四個等級時,取放模組會先將所有A等級的晶粒進行接合於基板的製程之後,再進行所有B等級的晶粒,而後依序處理C等級、D等級的晶粒。 In view of the above-mentioned multiple levels, the traditional method is to make the test results into a test result file. The test result file content can display the test result of each die, and the pick-and-place module picks and places the die in batches according to the grade. For example, when the test result file shows that the die is divided into four grades from A to D, the pick-and-place module will first process all the A-grade dies to the substrate before proceeding to all the B-grade dies. Then, the C-level and D-level crystal grains are processed in sequence.

由於在處理不同等級晶粒時,必須在接合載台上置放相對應於該等級晶粒的基板,因而耗費大量置換基板的工時,此外,等待晶粒與基板接合固化也必須耗費大量時間。上述種種因素都導致生產效率低。 Because when processing different grades of dies, the substrate corresponding to that grade must be placed on the bonding stage, which consumes a lot of man-hours to replace the substrate. In addition, it takes a lot of time to wait for the die and the substrate to bond and solidify. . All the above factors lead to low production efficiency.

為解決上述問題,部分業者的作法是先將不同等級的晶粒分開,而後採用兩條作業線分別負責A等級、B等級的晶粒。其係藉由一取放模組分別拾取A等級、B等級晶粒並送入不同的作業線,在同時進行與基板接合的製程。此方式雖然一次可同時處理兩顆晶粒的接合製程,但是必須投入設備成本及設備占據的空間。此外,取放模組取放晶粒的路徑加長,實際所能節省的工時有限。 In order to solve the above-mentioned problems, the practice of some manufacturers is to separate the different grades of dies, and then use two operation lines to be responsible for the A grade and B grade dies. It uses a pick-and-place module to pick up grade A and grade B dies and send them to different operating lines to simultaneously perform the process of bonding with the substrate. Although this method can process the bonding process of two dies at the same time, the equipment cost and the space occupied by the equipment must be invested. In addition, the path for the pick-and-place module to pick and place the die is lengthened, and the actual man-hours that can be saved are limited.

針對晶粒與基板接合的製程而言,由於不同晶粒具有不同厚度,且晶粒的態樣不同,因此對於黏晶製程的加熱器的選用也是一項重要的考量因素。 For the process of bonding the die and the substrate, since different die have different thicknesses and the state of the die is different, the selection of the heater for the die bonding process is also an important consideration.

例如,當晶粒較厚時,若是由晶粒底部或頂部單方向加熱,都會導致熱度分布不均。或者,當晶粒為多層式結構時,例如3D快閃記憶體(NAND),其屬於層層堆疊式結構,若由3D快閃記憶體(NAND)底部加熱,則會導致其頂部熱度不足,影響接合效果,然而若是加長加熱時間,則會導致底部受熱過度,使得製程品質惡化。 For example, when the crystal grains are thick, heating in one direction from the bottom or top of the crystal grains will cause uneven heat distribution. Or, when the die has a multi-layer structure, such as 3D flash memory (NAND), which belongs to a layer-by-layer structure, if the bottom of the 3D flash memory (NAND) is heated, it will cause insufficient heat at the top. The bonding effect is affected. However, if the heating time is prolonged, the bottom part will be overheated and the process quality will deteriorate.

據此,如何能有一種可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等問題之『黏晶機』,是相關技術領域人士亟待解決之課題。 According to this, how can there be a kind of "bonding die" that can bond the wafer to the corresponding type of substrate according to the wafer level, and can solve the problems of uneven heating, labor-consuming, and low production efficiency that exist in the traditional die-bonding process. "Operation" is a topic that people in the relevant technical fields need to solve urgently.

於一實施例中,本發明提出一種黏晶機,其包含:至少一接合載台,用以設置相同或不同類別之複數基板;一供應模組,用以設置至少一晶粒,晶粒具有一等級,等級對應於其中一基板之類別;一取放模組,設置於供應模組的上方,用以取放晶粒;一轉承模組,設置於供應模組與旋轉模組之間,用以承接由取放模組取放之晶粒;以及一旋轉模組,設置於接合載台之一側,旋轉模組包括至少一取放單元用以拾取晶粒,由取放單元將晶粒置放於相對應之類別之基板之表面。 In one embodiment, the present invention provides a die bonding machine, which includes: at least one bonding stage for setting a plurality of substrates of the same or different types; a supply module for setting at least one die, the die having One level, the level corresponds to the type of one of the substrates; one pick-and-place module is set above the supply module to pick and place the die; one transfer module is set between the supply module and the rotating module , Used to receive the die picked and placed by the pick-and-place module; and a rotary module, arranged on one side of the joint carrier, the rotary module includes at least one pick-and-place unit for picking up the die, The die is placed on the surface of the corresponding type of substrate.

1,1A:黏晶機 1,1A: Chip bonding machine

2~2D:晶粒 2~2D: Die

10:供應模組 10: Supply module

20,20A:取放模組 20, 20A: Pick and place module

21A,22A:取放頭 21A, 22A: Pick and place head

30,30A:轉承模組 30, 30A: transfer module

40,40A:旋轉模組 40, 40A: Rotating module

41:旋轉座 41: Rotating seat

42,42A:取放單元 42,42A: Pick and place unit

421:取放頭 421: Pick and Place Head

422:加熱器 422: heater

423:壓力控制器 423: Pressure Controller

50:接合載台 50: Joint carrier

50A:第一接合載台 50A: The first joint carrier

50B:第二接合載台 50B: The second joining stage

51:夾持元件 51: clamping element

60~60D:基板 60~60D: substrate

70,70A:加熱器 70, 70A: heater

81:第一視覺擷取單元 81: The first visual capture unit

82:第二視覺擷取單元 82: The second visual capture unit

83:第三視覺擷取單元 83: The third visual capture unit

90:壓合模組 90: Compression module

91:座體 91: Seat

92:壓頭 92: pressure head

921:壓力控制器 921: Pressure Controller

922:加熱器 922: heater

100:上膠模組 100: Glue module

102:黏膠 102: viscose

110:翻轉模組 110: flip module

120:沾膠模組 120: Glue module

130:頂出模組 130: eject module

131:頂出件 131: eject

C:第一軸向 C: first axis

圖1為本發明之一實施例之俯視架構示意圖。 FIG. 1 is a schematic top view of an embodiment of the invention.

圖2為圖1實施例之前視架構示意圖。 FIG. 2 is a schematic diagram of the front view architecture of the embodiment in FIG. 1.

圖3為本發明另一實施例之俯視架構示意圖。 FIG. 3 is a schematic top view of another embodiment of the invention.

圖4為圖3實施例之前視架構示意圖。 FIG. 4 is a schematic diagram of the front view architecture of the embodiment in FIG. 3.

圖5為本發明另一實施例之俯視架構示意圖。 FIG. 5 is a schematic top view of another embodiment of the invention.

圖6為圖1實施例搭配設置二接合載台之前視架構示意圖。 FIG. 6 is a schematic diagram of the front view structure of the embodiment of FIG. 1 with two bonding stages.

圖7為圖1實施例搭配設置二接合載台及壓合模組之前視架構示意圖。 FIG. 7 is a schematic diagram of the structure of the embodiment in FIG. 1 before being equipped with two bonding stages and a pressing module.

圖8為圖1實施例搭配設置二接合載台及上膠模組之前視架構示意圖。 FIG. 8 is a schematic view of the structure of the embodiment in FIG. 1 before being equipped with two bonding stages and a gluing module.

圖9為圖1實施例搭配不同加熱器之前視架構示意圖。 FIG. 9 is a schematic diagram of the front view structure of the embodiment of FIG. 1 with different heaters.

圖10為圖1實施例搭配旋轉模組之前視架構示意圖。 FIG. 10 is a schematic structural diagram of the front view of the embodiment in FIG. 1 with a rotating module.

以下將詳述本發明內容的各實施例,並配合圖式作為例示。除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,任何所述實施例的輕易替代、修改、等效變化都包含在本發明的範圍內,並以之後的專利範圍為準。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部這些特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免造成本發明不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是,圖式僅為示意之用,並非代表元件實際的尺寸或數量,除非有特別說明。 Hereinafter, each embodiment of the content of the present invention will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and easy substitutions, modifications, and equivalent changes of any of the embodiments are included in the scope of the present invention and will be covered by the following patents. Prevail. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific details are provided; however, the present invention may still be implemented under the premise of omitting some or all of these specific details. In addition, well-known steps or elements are not described in details to avoid unnecessary limitation of the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. It should be noted that the drawings are for illustration only, and do not represent the actual size or quantity of the components, unless otherwise specified.

請參閱圖1及圖2所示實施例,本發明提供之黏晶機1,包含一供應模組10、一取放模組20、一轉承模組30、一旋轉模組40及一接合載台50。 Please refer to the embodiment shown in FIGS. 1 and 2. The die bonding machine 1 provided by the present invention includes a supply module 10, a pick-and-place module 20, a transfer module 30, a rotation module 40, and a joint Carrier 50.

供應模組10用以設置複數晶粒2~2D。該複數晶粒2~2D已經過晶圓測試機的測試且依晶粒2~2D的品質區分為不同等級並製作成一測試結果檔案。於本實施例中,晶粒2~2D分別代表五種不同等級,然不限於五種,依實際測試結果而定,也可能所有的晶粒都屬於同一種等級。 The supply module 10 is used to set a plurality of dies 2~2D. The plural dies 2~2D have been tested by a wafer tester and are classified into different grades according to the quality of the dies 2~2D and made into a test result file. In this embodiment, the dies 2~2D respectively represent five different grades, but it is not limited to five. Depending on the actual test results, it is possible that all the dies belong to the same grade.

取放模組20設置於供應模組10的上方,用以取放晶粒2~2D。於供應模組10的上方設有一第一視覺擷取單元81用以擷取位於供應模組10之晶粒2~2D的影像資訊,並將視覺資訊係提供給取放模組20,由取放模組20依據該視覺資訊吸取位於供應模組10之晶粒2~2D。 The pick-and-place module 20 is arranged above the supply module 10 for pick-and-place die 2-2D. A first visual capture unit 81 is provided above the supply module 10 to capture the 2D~2D image information of the die located in the supply module 10, and provide the visual information to the pick-and-place module 20. The display module 20 absorbs the die 2-2D located in the supply module 10 according to the visual information.

轉承模組30設置於供應模組10與旋轉模組40之間,圖1及圖2顯示轉承模組30承接了由取放模組20取放之晶粒2。於轉承模組30的上方設有一第二視覺擷取單元82用以擷取位於轉承模組30之晶粒2的影像資訊,並將該影像資訊提供給轉承模組30。旋轉模組40再依據該影像資訊吸取位於轉承模組30上之晶粒2。 The transfer module 30 is disposed between the supply module 10 and the rotating module 40. FIGS. 1 and 2 show that the transfer module 30 receives the die 2 picked and placed by the pick-and-place module 20. A second visual capture unit 82 is provided above the transfer module 30 to capture image information of the die 2 located in the transfer module 30 and provide the image information to the transfer module 30. The rotating module 40 then sucks the die 2 on the transfer module 30 according to the image information.

旋轉模組40包括一旋轉座41,其以一第一軸向C為中心旋轉,第一軸向C垂直於水平面。於旋轉座41設有複數取放單元42用以吸取設置於轉承模組30上之晶粒2。當旋轉座41旋轉時,可同步驅動取放單元42旋轉並將所吸取之晶粒2運送並置放於接合載台50上之基板60之表面。 The rotating module 40 includes a rotating seat 41 that rotates around a first axis C, which is perpendicular to the horizontal plane. The rotating base 41 is provided with a plurality of pick-and-place units 42 for sucking the die 2 set on the transfer module 30. When the rotating base 41 rotates, the pick-and-place unit 42 can be synchronously driven to rotate and the sucked die 2 is transported and placed on the surface of the substrate 60 on the bonding stage 50.

接合載台50用以設置相同或不同類別之複數基板60~60D。接合載台50設有夾持元件51夾持於基板60~60D的相對二側邊,以使基板60~60D於接合載台50上保持定位。上述不同類別包括不同尺寸及/或不同材料,例如,圖1顯示的五張基板60~60D具有四種不同尺寸,至於基板60~60D則可能分屬五種不同材料,或是屬於相同的材料,或是分屬於二~四種不同的材料。 The bonding stage 50 is used to set a plurality of substrates 60-60D of the same or different types. The bonding stage 50 is provided with clamping elements 51 that are clamped on two opposite sides of the substrates 60 to 60D, so that the substrates 60 to 60D are maintained in position on the bonding stage 50. The above-mentioned different categories include different sizes and/or different materials. For example, the five substrates 60-60D shown in Figure 1 have four different sizes. As for the substrates 60-60D, they may belong to five different materials or belong to the same material. , Or belong to two to four different materials.

圖1顯示於旋轉座41等角設置共四組取放單元42,然不限於此,可依實際所需決定取放單元42的數量。此外,圖1顯示於接合載台50上設有五個基板60僅為示意,可依實際所需設計接合載台50的尺寸以及可 容納的基板60的數量。 FIG. 1 shows that a total of four groups of pick-and-place units 42 are equiangularly arranged on the rotating seat 41, but it is not limited to this, and the number of pick-and-place units 42 can be determined according to actual needs. In addition, FIG. 1 shows that there are five substrates 60 on the bonding stage 50 for illustration only, and the size and the size of the bonding stage 50 can be designed according to actual needs. The number of substrates 60 accommodated.

於本實施例中,取放單元42包括一取放頭421,取放頭421連接於一加熱器422及一壓力控制器423。加熱器422用以對取放單元42所取放之晶粒2加熱。壓力控制器423除了可以感應取放單元42取放晶粒2時所施加的壓力之外,其主要功能在於依據所感應的壓力控制取放單元42取放晶粒2時所施加的壓力,以使取放單元42於取放晶粒2施加適當的壓力,避免壓力過大或不足。可依所需設計是否設置加熱器422及壓力控制器423或僅設置其中之一。 In this embodiment, the pick-and-place unit 42 includes a pick-and-place head 421, and the pick-and-place head 421 is connected to a heater 422 and a pressure controller 423. The heater 422 is used for heating the die 2 taken and placed by the pick and place unit 42. In addition to the pressure controller 423 that can sense the pressure applied by the pick-and-place unit 42 when picking and placing the die 2, its main function is to control the pressure applied by the pick-and-place unit 42 when picking and placing the die 2 according to the sensed pressure. The pick-and-place unit 42 applies appropriate pressure to the pick-and-place die 2 to avoid excessive or insufficient pressure. The heater 422 and the pressure controller 423 or only one of them can be provided according to the required design.

請參閱圖2所示,於供應模組10之下方設有一頂出模組130,頂出模組130具有一頂出件131,用以將設置於供應模組10上之晶粒2上頂,以利於取放模組20拾取晶粒2。 Please refer to FIG. 2, an ejector module 130 is provided under the supply module 10, and the ejector module 130 has an ejector 131 for topping the die 2 disposed on the supply module 10 , In order to facilitate the pick-and-place module 20 to pick up the die 2.

請參閱圖3及圖4所示實施例,本發明提供之黏晶機1A,包含一供應模組10、一取放模組20、一轉承模組30A、一旋轉模組40A及一接合載台50。本實施例顯示旋轉模組40A的旋轉座41等分度設置共四組取放單元42A,每一組取放單元42A包括兩取放頭421,每一取放頭421分別連接於一加熱器422及壓力控制器423。各組吸取單元組42A之二取放頭421之排列方向與以一第一軸向C為中心形成的圓相切。可控制兩取放頭421同時或僅其中之一吸取晶粒2~2D。 Please refer to the embodiment shown in FIGS. 3 and 4, the die bonder 1A provided by the present invention includes a supply module 10, a pick-and-place module 20, a transfer module 30A, a rotation module 40A, and a joint Carrier 50. This embodiment shows that the rotating base 41 of the rotating module 40A is equally divided into four groups of pick-and-place units 42A. Each group of pick-and-place units 42A includes two pick-and-place heads 421, and each pick-and-place head 421 is connected to a heater. 422 and pressure controller 423. The arrangement direction of the two pick-and-place heads 421 of each group of suction unit groups 42A is tangent to a circle formed with a first axis C as the center. The two pick-and-place heads 421 can be controlled to simultaneously or only one of them can suck 2~2D of the die.

圖3顯示轉承模組30A承載二個不同等級的晶粒2、2C,基板60、60A分別黏合了不同等級的晶粒2A、2B。圖4顯示其中一組吸取單元組42A的二取放頭421分別吸取了不同等級的晶粒2、2B。 FIG. 3 shows that the transfer module 30A carries two different grades of dies 2 and 2C, and the substrates 60 and 60A are respectively bonded with different grades of dies 2A and 2B. FIG. 4 shows that the two pick-and-place heads 421 of one of the sucking unit groups 42A suck different grades of dies 2 and 2B, respectively.

圖3及4的實施例說明,可分別控制每一組取放單元42A的兩個 取放頭421同時或分別取放晶粒2~2D,並由各個取放頭421透過所連接的加熱器422及壓力控制器423分別對於所吸取的晶粒2~2D進行加熱及控制所施加的壓力。 The embodiments of FIGS. 3 and 4 illustrate that the two pick-and-place units 42A of each group can be controlled separately The pick-and-place heads 421 simultaneously or separately pick and place the die 2~2D, and each pick-and-place head 421 heats and controls the sucked die 2~2D through the connected heater 422 and the pressure controller 423. pressure.

如前所述,複數晶粒2~2D已經過晶圓測試機的測試且依晶粒2~2D的品質區分為不同等級並製作成一測試結果檔案。不同等級的晶粒2~2D必須接合於不同類別的基板60~60C。經由一控制單元(圖中未示出)電性連接黏晶機1,取放模組20可經由測試結果檔案內容判別出取放單元42A所取放之晶粒2~2D的等級,且判別出對應於該等級之晶粒2~2D之基板60~60C之位置,即可由取放單元42A將晶粒2~2D置放於相對應之類別之基板60~60C之表面。 As mentioned above, the plural dies 2~2D have been tested by the wafer tester and are classified into different levels according to the quality of the dies 2~2D and made into a test result file. Die 2~2D of different grades must be bonded to substrates 60~60C of different types. Via a control unit (not shown in the figure) electrically connected to the die bonder 1, the pick-and-place module 20 can determine the level of the die 2~2D picked and placed by the pick-and-place unit 42A through the content of the test result file, and determine If the position of the substrate 60~60C corresponding to the level of die 2~2D is found, the pick-and-place unit 42A can place the die 2~2D on the surface of the corresponding type of substrate 60~60C.

同理,若同時有二取放單元42A拾取具有二種等級之晶粒2~2D,且基板60~60D具有至少二種對應於該二種等級之二種類別,則每一類別之基板60~60D之表面上皆可置放有相對應之等級之一晶粒2~2D。 In the same way, if two pick-and-place units 42A pick up the die 2~2D with two levels at the same time, and the substrate 60~60D has at least two types corresponding to the two levels, then the substrate 60 of each category The surface of ~60D can be placed with a corresponding level of 2~2D crystal grains.

於本實施例中,於接合載台50內設有一加熱器70,用以由基板60~60D之底部對基板60~60D及/或設置於基板60~60D上之晶粒2~2D加熱,以使晶粒2~2D與基板60~60D接合。在此之前,由於晶粒2~2D可經由取放單元42A的加熱器422進行預熱,因此可加快於接合載台50上與基板60~60D接合的速度。 In this embodiment, a heater 70 is provided in the bonding stage 50 for heating the substrate 60-60D and/or the die 2-2D provided on the substrate 60-60D from the bottom of the substrate 60-60D. So that the die 2~2D is bonded to the substrate 60~60D. Prior to this, since the dies 2-2D can be preheated by the heater 422 of the pick-and-place unit 42A, the speed of bonding with the substrates 60-60D on the bonding stage 50 can be accelerated.

於接合載台50的上方設有一第三視覺擷取單元83用以擷取接合載台50之基板60~60D的接合影像資訊,並將接合影像資訊提供給旋轉模組40。 A third visual capturing unit 83 is provided above the bonding stage 50 for capturing bonding image information of the substrates 60-60D of the bonding stage 50 and providing the bonding image information to the rotating module 40.

藉由前述第一視覺擷取單元81、第二視覺擷取單元82、第三 視覺擷取單元83監控晶粒2~2D由供應模組10被吸取至與基板60~60D接合之整體過程,包括晶粒2~2D與基板60~60D的相對位置,以維持製程的順利進行。可依所需移動第一視覺擷取單元81、第二視覺擷取單元82、第三視覺擷取單元83的位置,以順利擷取清晰的影像。 Through the aforementioned first visual capture unit 81, second visual capture unit 82, and third The visual capture unit 83 monitors the overall process of die 2~2D being sucked from the supply module 10 to bonding with the substrate 60~60D, including the relative position of the die 2~2D and the substrate 60~60D to maintain the smooth progress of the process . The positions of the first visual capturing unit 81, the second visual capturing unit 82, and the third visual capturing unit 83 can be moved as needed to smoothly capture a clear image.

就轉承模組30A可承載二個不同等級的晶粒的狀況而言,除了搭配圖3所示單顆取放晶粒的取放模組20之外,亦可搭配如圖5所示,可控制同時取放兩顆晶粒或一次拾取一顆晶粒的取放模組20A。 Regarding the condition that the transfer module 30A can carry two different grades of dies, in addition to the pick-and-place module 20 shown in FIG. 3 for a single pick-and-place die, it can also be matched as shown in FIG. 5. It can control the pick-and-place module 20A for picking up and placing two dies at the same time or picking up one die at a time.

請參閱圖5所示實施例,本發明提供之黏晶機1B,包含一供應模組10、一取放模組20A、一轉承模組30A、一旋轉模組40A及一接合載台50。 Please refer to the embodiment shown in FIG. 5, the chip bonding machine 1B provided by the present invention includes a supply module 10, a pick-and-place module 20A, a transfer module 30A, a rotation module 40A, and a joining stage 50 .

本實施例與圖3實施例之差異包括,取放模組20A具有二個取放頭21A、22A,可控制取放頭21A、22A同時作動以拾取二顆晶粒,或控制取放頭21A、22A個別作動以不同時拾取晶粒。 The difference between this embodiment and the embodiment in FIG. 3 includes that the pick-and-place module 20A has two pick-and-place heads 21A, 22A, which can control the pick-and-place heads 21A, 22A to act at the same time to pick up two dies, or control the pick-and-place head 21A , 22A act separately to pick up the die at the same time.

如圖5所示,轉承模組30A上擺放了二顆晶粒2C,該二顆晶粒2C可由取放模組20A的二個取放頭21A、22A同時由供應模組10上拾取再同時擺放於轉承模組30A上;也可由取放頭21A、22A分別由供應模組10上拾取再分別或同時擺放於轉承模組30A上。 As shown in FIG. 5, two dies 2C are placed on the transfer module 30A. The two dies 2C can be picked up by the two pick-and-place heads 21A and 22A of the pick-and-place module 20A at the same time from the supply module 10. They are then placed on the transfer module 30A at the same time; it can also be picked up by the pick-and-place heads 21A and 22A from the supply module 10 and then placed on the transfer module 30A separately or at the same time.

而後,可由取放單元42A同時拾取轉承模組30A上的二顆晶粒2C,並將二顆晶粒2C同時置放於接合載台50上之基板60B之表面。關於本實施例所採用之旋轉模組40A的態樣,可參閱圖4所示,旋轉模組40A的旋轉座41等分度設置共四組取放單元42A,每一組取放單元42A包括兩取放頭421,每一取放頭421分別連接於一加熱器422及壓力控制器423。 Then, the pick-and-place unit 42A can pick up the two dies 2C on the transfer module 30A at the same time, and place the two dies 2C on the surface of the substrate 60B on the bonding stage 50 at the same time. Regarding the state of the rotating module 40A used in this embodiment, please refer to FIG. 4. The rotating seat 41 of the rotating module 40A is equally divided into four groups of pick-and-place units 42A, and each group of pick-and-place units 42A includes Two pick-and-place heads 421, each pick-and-place head 421 is respectively connected to a heater 422 and a pressure controller 423.

圖5實施例利用具有二個取放頭21A、22A的取放模組20A可一次拾取二顆晶粒之目的在於,當晶粒的厚度較薄時,必須耗費較多的時間挑揀晶粒,因此利用具有二個取放頭21A、22A的取放模組20A一次拾取二顆晶粒,可縮短時取晶粒的時間;且若當所拾取的二顆晶粒的等級相同時,即可將二顆晶粒同時置放於同一基板上,更進一步地縮短黏晶時間,提供生產效率。 The embodiment of FIG. 5 uses the pick-and-place module 20A with two pick-and-place heads 21A, 22A to pick up two die at a time. The purpose is that when the thickness of the die is thin, it takes more time to pick the die. Therefore, using the pick-and-place module 20A with two pick-and-place heads 21A and 22A to pick up two dies at a time can shorten the time for picking up the dies; and if the two pick-up dies are of the same grade, it can be Placing two dies on the same substrate at the same time further shortens the die bonding time and improves production efficiency.

然而,如前所述,即使取放模組20A可同時拾取兩顆晶粒,但亦可控制取放頭21A、22A僅其中一作動。例如,圖5同時揭露於基板60上放置有兩顆晶粒2A,該兩顆晶粒2A可以是由取放模組20A的二個取放頭21A、22A同時由供應模組10上拾取再同時擺放於轉承模組30A上,而後再由取放單元42A同時拾取再擺放於基板60上。或者,該兩顆晶粒2A可以是由取放頭21A、22A分別單獨拾取後,單獨擺放於轉承模組30A上,而後再由取放單元42A同時拾取再擺放於基板60上。 However, as mentioned above, even if the pick-and-place module 20A can pick up two dies at the same time, it can control only one of the pick-and-place heads 21A, 22A to actuate. For example, FIG. 5 also discloses that two dies 2A are placed on the substrate 60. The two dies 2A can be picked up by the two pick-and-place heads 21A, 22A of the pick-and-place module 20A at the same time from the supply module 10. It is placed on the transfer module 30A at the same time, and then picked up by the pick-and-place unit 42A and placed on the substrate 60 at the same time. Alternatively, the two dies 2A may be individually picked up by the pick-and-place heads 21A and 22A, and then separately placed on the transfer module 30A, and then picked up by the pick-and-place unit 42A and placed on the substrate 60 at the same time.

同理,圖2所示頂出模組130亦可應用於圖5的供應模組10。為了搭配具有兩個取放頭21A、22A可同時拾取兩顆晶粒的取放模組20A,頂出模組130可設置二頂出件131,用以將設置於供應模組10上之二顆晶粒同時上頂,以利於取放模組20A同時拾取二顆晶粒,提高晶粒取放的效率。然而,頂出模組130設置的二頂出件131可控制僅其中之一作動,不限於同時作動。 In the same way, the ejection module 130 shown in FIG. 2 can also be applied to the supply module 10 in FIG. 5. In order to match the pick-and-place module 20A with two pick-and-place heads 21A and 22A capable of picking up two dies at the same time, the ejection module 130 can be provided with two ejector pieces 131 for placing the two on the supply module 10 The die is placed on top at the same time, so that the pick-and-place module 20A can pick up two die at the same time, which improves the efficiency of picking and placing the die. However, the two ejectors 131 provided by the ejector module 130 can control only one of them to act, and it is not limited to act simultaneously.

請參閱圖6所示實施例,本實施例與圖2實施例的主要差異在於本實施例設有一第一接合載台50A與一第二接合載台50B,第一接合載台50A與第二接合載台50B可輪替地承接取放單元42運送之晶粒2~2D。 Please refer to the embodiment shown in FIG. 6, the main difference between this embodiment and the embodiment in FIG. 2 is that this embodiment has a first bonding stage 50A and a second bonding stage 50B, the first bonding stage 50A and the second bonding stage 50A The bonding stage 50B can alternately receive the die 2~2D transported by the pick-and-place unit 42.

例如,當第一接合載台50A的基板60皆承接所有晶粒2~2D後,則移至一旁,換由第二接合載台50B的基板60~60D承接晶粒2。移至一旁的第一接合載台50A上的基板60與晶粒2B、2D可由加熱器70繼續加熱,而在等待第一接合載台50A上的基板60與晶粒2B、2D完全接合固化的過程中,第二接合載台50B上的基板60可進行承接晶粒2~2D的製程。如此可充分利用因等待基板60與晶粒2~2D完全接合固化而耗費的時間,提高生產效率。 For example, when the substrate 60 of the first bonding stage 50A accepts all the dies 2~2D, it is moved aside, and the substrate 60~60D of the second bonding stage 50B accepts the die 2. The substrate 60 and the die 2B, 2D on the first bonding stage 50A moved aside can be heated by the heater 70, while waiting for the substrate 60 on the first bonding stage 50A and the die 2B, 2D to be completely bonded and solidified In the process, the substrate 60 on the second bonding stage 50B can undergo a process of receiving the die 2-2D. In this way, the time spent waiting for the substrate 60 and the die 2~2D to be completely bonded and solidified can be fully utilized, and the production efficiency can be improved.

請參閱圖7所示實施例,本實施例與圖6實施例的主要差異在於本實施例更搭配一壓合模組90。壓合模組90具有一座體91,於座體91底部設有複數壓頭92。每一壓頭92包括一壓力控制器921及一加熱器922。壓頭92的位置對應於位於基板60上之晶粒2~2D的位置。 Please refer to the embodiment shown in FIG. 7. The main difference between this embodiment and the embodiment in FIG. 6 is that this embodiment is further equipped with a pressing module 90. The pressing module 90 has a base 91, and a plurality of pressing heads 92 are provided at the bottom of the base 91. Each pressure head 92 includes a pressure controller 921 and a heater 922. The position of the indenter 92 corresponds to the position of the die 2-2D on the substrate 60.

當第一接合載台50A的基板60皆承接所有晶粒2~2D(圖7僅標示出二晶粒2、2D)後,則移至一旁,換由第二接合載台50B的基板60承接晶粒2~2D。藉由壓合模組90對於第一接合載台50A的基板60上的晶粒2~2D施壓及加熱。各壓頭92分別壓合於相對應的晶粒2上,可由各壓力控制器921感應並控制壓頭92對晶粒2施加的壓力,不致施加過大或不足的壓力於晶粒2~2D上,且由各加熱器922可對所施壓的晶粒2~2D及/或晶粒2~2D所置放之基板60加熱。 When the substrate 60 of the first bonding stage 50A accepts all the dies 2~2D (Figure 7 only shows the second dies 2 and 2D), then move to the side and replace it with the substrate 60 of the second bonding stage 50B. Die 2~2D. The die 2-2D on the substrate 60 of the first bonding stage 50A is pressed and heated by the pressing module 90. Each indenter 92 is pressed against the corresponding die 2 respectively, and each pressure controller 921 can sense and control the pressure exerted by the indenter 92 on the die 2 so as not to exert excessive or insufficient pressure on the die 2~2D , And each heater 922 can heat the pressed die 2~2D and/or the substrate 60 on which the die 2~2D is placed.

換言之,第一接合載台50A的基板60於承接晶粒2~2D時,可進行第一階段的「預壓」,並由第一接合載台50A的加熱器70加熱。當第一接合載台50A移至一旁後,再進行第二階段的「主壓」,由壓合模組90加壓並由加熱器922加熱。在等待第一接合載台50A上的基板60與晶粒 2~2D完全接合固化的過程中,第二接合載台50B上的基板60可進行承接晶粒2~2D的製程。如此可充分利用因等待基板60與晶粒2~2D完全接合固化所耗費的時間,提高生產效率。 In other words, when the substrate 60 of the first bonding stage 50A receives the die 2 to 2D, the first stage of "pre-compression" can be performed, and it can be heated by the heater 70 of the first bonding stage 50A. After the first bonding stage 50A moves to the side, the second stage of "main pressure" is performed, which is pressurized by the pressing module 90 and heated by the heater 922. Waiting for the substrate 60 and the die on the first bonding stage 50A During the 2~2D complete bonding and curing process, the substrate 60 on the second bonding stage 50B can undergo a process of receiving the 2~2D die. In this way, the time spent waiting for the substrate 60 and the die 2~2D to be fully bonded and solidified can be fully utilized, and the production efficiency can be improved.

必須說明的是,於圖1至圖7實施例中之晶粒2~2D,在其與基板60~60D接觸之一面已具有黏膠,經由加熱器422、加熱器922及加熱器70的加熱使原本附著於晶粒2~2D上的黏膠熔化,即可使晶粒2~2D與基板60~60D相接合,因此不需要另外上膠。然而對於不具有黏膠的晶粒2~2D而言,則需要施加黏膠,例如浸漬(Dipping)、點膠(Dispenser、Syringe Transfer)、戳印(Stamping)或網印(Screen Printing)其中之一。 It must be noted that the die 2~2D in the embodiment of Figs. 1 to 7 already has glue on its contact surface with the substrate 60~60D, which is heated by the heater 422, the heater 922, and the heater 70 By melting the glue originally attached to the die 2~2D, the die 2~2D can be bonded to the substrate 60~60D, so there is no need for additional glue. However, for dies 2~2D that do not have glue, glue is required, such as Dipping, Dispenser, Syringe Transfer, Stamping, or Screen Printing. One.

請參閱圖8所示實施例,本實施例與圖6實施例的主要差異在於本實施例搭配一上膠模組100。上膠模組100呈現針筒型態,可將黏膠102點放於基板60表面相對應需要設置晶粒2~2D之位置。如圖8所示,當第一接合載台50A的基板60於承接晶粒2~2D(圖8僅標示出二晶粒2B、2D)時(於此之前,第一接合載台50A的基板60已經由上膠模組100完成點膠),可由上膠模組100對第二接合載台50B上的基板60進行點膠。當第一接合載台50A的基板60皆承接所有晶粒2~2D後,移至一旁,換由第二接合載台50B的基板60承接晶粒2~2D,如此可充分利用因等待點膠所耗費的時間,提高生產效率。 Please refer to the embodiment shown in FIG. 8. The main difference between this embodiment and the embodiment in FIG. 6 is that this embodiment is equipped with a gluing module 100. The gluing module 100 is in the shape of a syringe, and the glue 102 can be placed on the surface of the substrate 60 corresponding to the position where the die needs to be arranged 2~2D. As shown in FIG. 8, when the substrate 60 of the first bonding stage 50A is receiving the die 2~2D (FIG. 8 only shows the two dies 2B and 2D) (prior to this, the substrate of the first bonding stage 50A 60 has been dispensed by the gluing module 100), the gluing module 100 can be used to dispense the substrate 60 on the second bonding stage 50B. When the substrate 60 of the first bonding stage 50A accepts all the dies 2~2D, move to the side, and replace the substrate 60 of the second bonding stage 50B to accept the dies 2~2D, which can make full use of waiting for dispensing The time spent improves production efficiency.

此外,於本實施例中,第一接合載台50A與第二接合載台50B內不須設置加熱器,以避免黏膠102受熱而固化。 In addition, in this embodiment, the first bonding stage 50A and the second bonding stage 50B do not need to be provided with heaters, so as to prevent the adhesive 102 from being heated and solidified.

請參閱圖9所示實施例,本實施例與圖2實施例的主要差異在於本實施例的加熱器70A設置於接合載台50之上方,用以由基板60之頂部 對基板60及/或設置於基板60上之晶粒2~2D(圖9僅標示出二晶粒2B、2D)加熱。 Please refer to the embodiment shown in FIG. 9. The main difference between this embodiment and the embodiment in FIG. 2 is that the heater 70A of this embodiment is disposed above the bonding stage 50 for driving from the top of the substrate 60 The substrate 60 and/or the dies 2~2D (only the two dies 2B and 2D are shown in FIG. 9) disposed on the substrate 60 are heated.

關於圖9所示將加熱器70A設置於接合載台50上方之實施例,同樣適用於圖6至圖8設有第一接合載台50A與第二接合載台50B的架構。 Regarding the embodiment in which the heater 70A is arranged above the bonding stage 50 shown in FIG. 9, it is also applicable to the structure in which the first bonding stage 50A and the second bonding stage 50B are provided in FIGS. 6 to 8.

此外,關於圖2至圖9分別所示之加熱器422、加熱器922、加熱器70、加熱器70A的種類不限,可為雷射加熱器、超音波加熱器或遠紅外線加熱器其中之一。 In addition, the types of heaters 422, heaters 922, heaters 70, and heaters 70A shown in FIGS. 2 to 9 are not limited, and may be laser heaters, ultrasonic heaters, or far-infrared heaters. One.

請參閱圖10所示實施例,本實施例適用於需要沾膠的晶粒。本實施例與圖2實施例的主要差異在於本實施例更包括一翻轉模組110及一沾膠模組120。翻轉模組110設置於取放模組20與轉承模組30之間,用以承接由取放模組20取放之晶粒2~2D,且翻轉一角度後,將晶粒2~2D置放於轉承模組30上。一般而言,翻轉模組110翻轉之角度可為180度。翻轉模組110之作用在於將晶粒2~2D需要沾膠之一面朝下,以利於沾膠製程。 Please refer to the embodiment shown in FIG. 10, this embodiment is suitable for the die that needs to be glued. The main difference between this embodiment and the embodiment in FIG. 2 is that this embodiment further includes a turning module 110 and a glue-dipping module 120. The turning module 110 is arranged between the pick-and-place module 20 and the transfer module 30, and is used to receive the 2~2D die picked and placed by the pick-and-place module 20, and after turning over an angle, the die 2~2D Placed on the transfer module 30. Generally speaking, the turning angle of the turning module 110 can be 180 degrees. The function of the flip module 110 is to place one of the die 2-2D that needs to be glued down to facilitate the glueing process.

沾膠模組120設置於旋轉模組40的下方,用以提供黏膠。取放單元42拾取轉承模組30上之晶粒2後,將晶粒2浸漬於沾膠模組120中,使晶粒2之一面附著黏膠。而後,再由取放單元42將沾有黏膠的晶粒2置放於接合載台50上之基板60之表面,即可由加熱器70對基板60與晶粒2進行接合固化,圖10顯示基板60上已接合固化一晶粒2D。 The glue-dipping module 120 is disposed under the rotating module 40 to provide glue. After the pick-and-place unit 42 picks up the die 2 on the transfer module 30, the die 2 is immersed in the glue dipping module 120, so that the glue is attached to one surface of the die 2. Then, the pick-and-place unit 42 places the die 2 covered with adhesive on the surface of the substrate 60 on the bonding stage 50, and the heater 70 can bond and solidify the substrate 60 and the die 2, as shown in FIG. 10 A die 2D has been bonded and solidified on the substrate 60.

本發明圖1至圖10揭露本發明不同實施例架構,而各架構皆具有一共同特點,於黏晶製程中,基板於接合載台上保持定位。例如圖1及圖2顯示,於晶粒2~2D被移動的過程中,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖3及圖4顯示,於晶粒2~2D被移動的過 程中,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖5顯示,無論是於基板設置一或兩顆晶粒,基板60~60D始終位於接合載台50上,基板60~60D無須移動。例如圖6~圖8顯示,基板60可與對應之接合載台50A、50B同步移動,但是基板60於對應之接合載台50A、50B上始終保持定位。例如圖9及圖10顯示,於晶粒2~2D被移動的過程中,基板60始終位於接合載台50上,基板60無須移動。 FIG. 1 to FIG. 10 of the present invention disclose the architecture of different embodiments of the present invention, and each architecture has a common feature. During the die bonding process, the substrate is kept in position on the bonding stage. For example, FIG. 1 and FIG. 2 show that during the process of moving the die 2~2D, the substrate 60~60D is always on the bonding stage 50, and the substrate 60~60D does not need to be moved. For example, Figures 3 and 4 show that when the die is moved in 2~2D, During the process, the substrates 60-60D are always on the bonding stage 50, and the substrates 60-60D do not need to be moved. For example, as shown in FIG. 5, whether one or two dies are placed on the substrate, the substrates 60-60D are always on the bonding stage 50, and the substrates 60-60D do not need to be moved. For example, FIGS. 6 to 8 show that the substrate 60 can move synchronously with the corresponding bonding stages 50A, 50B, but the substrate 60 is always positioned on the corresponding bonding stages 50A, 50B. For example, FIG. 9 and FIG. 10 show that during the process of moving the die 2~2D, the substrate 60 is always on the bonding stage 50, and the substrate 60 does not need to be moved.

綜上所述,本發明所提供之黏晶機,圖2至圖10顯示本發明不同實施例,然而都不脫離圖2所示基本架構,亦即,可根據晶圓等級將晶圓與相對應類別之基板相接合,並能解決傳統黏晶製程存在之加熱不均、耗費工時、生產效率低等缺失。 In summary, the die bonder provided by the present invention, Figures 2 to 10 show different embodiments of the present invention, but do not deviate from the basic structure shown in Figure 2, that is, according to the wafer level of the wafer and phase Corresponding types of substrates are joined together, and can solve the problems of uneven heating, labor-consuming, and low production efficiency in the traditional die bonding process.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

1:黏晶機 1: Chip bonding machine

2~2D:晶粒 2~2D: Die

10:供應模組 10: Supply module

20:取放模組 20: Pick and place module

30:轉承模組 30: Transfer module

40:旋轉模組 40: Rotating module

41:旋轉座 41: Rotating seat

42:取放單元 42: Pick and place unit

50:接合載台 50: Joint carrier

51:夾持元件 51: clamping element

60~60D:基板 60~60D: substrate

81:第一視覺擷取單元 81: The first visual capture unit

82:第二視覺擷取單元 82: The second visual capture unit

83:第三視覺擷取單元 83: The third visual capture unit

C:第一軸向 C: first axis

Claims (20)

一種黏晶機,包含:至少一接合載台,用以設置相同或不同類別之複數基板,該複數基板於該接合載台上保持定位;一供應模組,用以設置至少一晶粒,該晶粒具有一等級,該等級對應於其中一該基板之該類別;一取放模組,設置於該供應模組的上方,用以取放該晶粒;一轉承模組,設置於該供應模組與一旋轉模組之間,用以承接由該取放模組取放之至少一該晶粒;該旋轉模組,設置於該接合載台之一側,該旋轉模組包括至少一取放單元用以拾取該至少一晶粒,由該取放單元將該至少一該晶粒置放於相對應之該類別之該基板之表面。 A die bonding machine includes: at least one bonding stage for setting a plurality of substrates of the same or different types, and the plurality of substrates are kept in position on the bonding stage; a supply module for setting at least one die, the The die has a grade corresponding to the type of one of the substrates; a pick-and-place module is arranged above the supply module for picking and placing the die; and a transfer module is arranged on the The supply module and a rotating module are used to receive at least one die taken and placed by the pick-and-place module; the rotating module is arranged on one side of the joining stage, and the rotating module includes at least A pick-and-place unit is used for picking up the at least one die, and the pick-and-place unit places the at least one die on the surface of the corresponding type of the substrate. 如請求項1之黏晶機,其中該取放單元拾取具有至少二種等級之複數該晶粒,該複數基板具有至少二種對應於該二種等級之二種類別,每一該類別之該基板之表面上置放有相對應之該等級之至少一該晶粒。 For example, the die bonder of claim 1, wherein the pick-and-place unit picks up a plurality of the die having at least two levels, the plurality of substrates has at least two two types corresponding to the two levels, and each of the types of the die At least one crystal grain of the corresponding grade is placed on the surface of the substrate. 如請求項1之黏晶機,其中該基板之類別包括不同尺寸及/或不同材料。 Such as the die bonder of claim 1, wherein the type of the substrate includes different sizes and/or different materials. 如請求項1之黏晶機,其中該取放單元連接於一加熱器,用以對該取放單元所取放之該至少一晶粒加熱。 Such as the die bonder of claim 1, wherein the pick-and-place unit is connected to a heater for heating the at least one die picked-up and placed by the pick-and-place unit. 如請求項1之黏晶機,其中該取放單元連接於一壓力控制器,用以感應該取放單元取放該至少一晶粒時所施加的壓力。 For example, the die bonding machine of claim 1, wherein the pick-and-place unit is connected to a pressure controller for sensing the pressure applied by the pick-and-place unit when picking and placing the at least one die. 如請求項1之黏晶機,其具有複數該接合載台,該複數接合載台包括一第一接合載台與一第二接合載台,該第一接合載台與該第二接合載台輪替地承接該取放單元運送之該晶粒。 Such as the die bonder of claim 1, which has a plurality of the bonding stages, the plurality of bonding stages including a first bonding stage and a second bonding stage, the first bonding stage and the second bonding stage The die transported by the pick-and-place unit is alternately received. 如請求項1之黏晶機,其更包括一壓合模組,用以對該置放於該基板上之該晶粒施壓及加熱,該壓合模組具有複數壓頭,每一該壓頭包括:一壓力控制器,用以控制該壓頭對該晶粒施加的壓力;以及一加熱器,用以對所施壓的該晶粒及/或該晶粒所置放之該基板加熱。 For example, the die bonding machine of claim 1, which further includes a pressing module for applying pressure and heating to the die placed on the substrate, the pressing module having a plurality of pressure heads, each of the The indenter includes: a pressure controller for controlling the pressure applied by the indenter to the die; and a heater for applying pressure to the die and/or the substrate on which the die is placed heating. 如請求項1之黏晶機,其更包括一上膠模組,用以將黏膠置放於該基板之表面。 Such as the die bonding machine of claim 1, which further includes a glue application module for placing glue on the surface of the substrate. 如請求項8之黏晶機,其中該上膠模組之上膠方式為點膠、戳印或網印其中之一。 For example, the die bonding machine of claim 8, wherein the gluing method of the gluing module is one of dispensing, stamp printing or screen printing. 如請求項1之黏晶機,其更包括一加熱器,用以對該至少一晶粒及/或該複數基板加熱。 Such as the die bonder of claim 1, which further includes a heater for heating the at least one die and/or the plurality of substrates. 如請求項10之黏晶機,其中該加熱器設置於該接合載台內,用以由該複數基板之底部對該複數基板及/或設置於該複數基板上之至少一該晶粒加熱。 Such as the die bonder of claim 10, wherein the heater is provided in the bonding stage for heating the plurality of substrates and/or at least one die set on the plurality of substrates from the bottom of the plurality of substrates. 如請求項10之黏晶機,其中該加熱器設置於該接合載台之上方,用以由該複數基板之頂部對該複數基板及/或設置於該複數基板上之至少一該晶粒加熱。 The die bonder of claim 10, wherein the heater is disposed above the bonding stage for heating the plurality of substrates and/or at least one die set on the plurality of substrates from the top of the plurality of substrates . 如請求項10之黏晶機,其中該加熱器為雷射加熱器、超音波加熱器或遠紅外線加熱器其中之一。 Such as the die bonder of claim 10, wherein the heater is one of a laser heater, an ultrasonic heater or a far infrared heater. 如請求項1之黏晶機,其更包括一翻轉模組,其設置於該取放模組與該轉承模組之間,用以承接由該取放模組取放之該晶粒,且翻轉一角度後,將該晶粒置放於該轉承模組上。 For example, the die bonder of claim 1, which further includes a flip module, which is arranged between the pick-and-place module and the transfer module to receive the die picked and placed by the pick-and-place module, After turning over an angle, the die is placed on the transfer module. 如請求項14之黏晶機,其更包括一沾膠模組,其設置於該旋轉模組的下方,用以提供黏膠;該取放單元拾取該轉承模組上之該晶粒後,將該晶粒浸漬於該沾膠模組,使該晶粒之一面附著黏膠。 For example, the die bonding machine of claim 14, which further includes a dipping module, which is arranged under the rotating module to provide adhesive; after the pick-and-place unit picks up the die on the transfer module Immersing the crystal grains in the dipping module so that glue is attached to one side of the crystal grains. 如請求項1之黏晶機,其中該旋轉模組包括一旋轉座,其以一第一軸向為中心旋轉,該第一軸向垂直於水平面;於該旋轉座設有複數該取放單元用以吸取設置於該轉承模組上之該晶粒,該旋轉座驅動該取放單元旋轉並運送該晶粒至該接合載台上之該基板之該表面。 For example, the die bonding machine of claim 1, wherein the rotating module includes a rotating base that rotates with a first axis as the center, and the first axis is perpendicular to the horizontal plane; the rotating base is provided with a plurality of the pick-and-place units Used to suck the die set on the transfer module, the rotating seat drives the pick-and-place unit to rotate and transport the die to the surface of the substrate on the bonding stage. 如請求項16之黏晶機,其中該旋轉模組的該旋轉座設有複數組取放單元,每一組該取放單元包括複數該取放頭,每一該取放頭分別連接於一加熱器及一壓力控制器。 For example, the wafer bonding machine of claim 16, wherein the rotating base of the rotating module is provided with a plurality of pick-and-place units, and each group of the pick-and-place units includes a plurality of the pick-and-place heads, and each of the pick-and-place heads is connected to a Heater and a pressure controller. 如請求項17之黏晶機,其中該複數組取放單元係等分度設置於旋轉座,各組該吸取單元組之該複數取放頭之排列方向與以該第一軸向為中心形成的圓相切。 For example, the die bonder of claim 17, wherein the multiple pick-and-place units are equally divided on the rotating seat, and the arrangement direction of the multiple pick-and-place heads of each group of the suction unit group is formed with the first axis as the center The circle is tangent. 如請求項1之黏晶機,其中該取放模組具有複數個取放頭,該取放模組之各該複數取放頭可被控制同時作動以同時拾取複數該晶粒,或該取放模組之各該複數取放頭可被控制個別作動以不同時拾取該晶粒。 For example, the die bonder of claim 1, wherein the pick-and-place module has a plurality of pick-and-place heads, and each of the plural pick-and-place heads of the pick-and-place module can be controlled to act simultaneously to pick up a plurality of the die, or the pick-and-place module Each of the plural pick and place heads of the place module can be controlled to act individually to pick up the die at the same time. 如請求項1之黏晶機,其中該供應模組之下方設有至少一頂出模組,該頂出模組具有至少一頂出件,用以將設置於該供應模組上之至少一該晶粒上頂,以利於該取放模組拾取該晶粒。 For example, the die bonder of claim 1, wherein at least one ejector module is provided below the supply module, and the ejector module has at least one ejector for attaching at least one of the supply modules The die is topped to facilitate the pick-and-place module to pick up the die.
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