TWI716821B - Wafer structures - Google Patents

Abstract

An alignment mark pattern is provided. The alignment mark pattern includes a first region including a first line and a first space having different widths therebetween, a second region including a second line and a second space having different widths therebetween, a third region including a third line and a third space having different widths therebetween, and a fourth region including a fourth line and a fourth space having different widths therebetween. The first and second lines extend along a first direction. The third and fourth lines extend along a second direction perpendicular to the first direction. The first region is diagonal to the second region. The third region is diagonal to the fourth region. The third region is adjacent to the first and second regions. The fourth region is adjacent to the first and second regions.

Description

Wafer structure

The present invention relates to an alignment mark pattern, and particularly relates to an alignment mark pattern including different line/space sizes.

The traditional epitaxial process has a great influence on the acquisition of alignment mark exposure signals. If multiple epitaxial processes are implemented, the thickness of the epitaxial layer gradually increases, which will affect the stepper. ) The capture of the exposure signal of the alignment mark causes serious process defects such as wafer reject or overlay shift. Due to the trend of customization in the future, increasing the number of epitaxial processes or increasing the thickness of the epitaxial layer is an important consideration, and this requirement is bound to seriously affect the effect of the stepper machine on the acquisition of the alignment mark exposure signal.

Currently, multiple alignment marks are repeatedly made on different epitaxial layers to try to solve the problem of poor exposure signal capture. However, as the alignment marks are added, multiple related lithography processes must also be added. , Has caused negative results such as a substantial increase in production costs and the need to spend more process time.

Therefore, it is desirable to develop an alignment mark pattern that does not need to be repeatedly fabricated even when multiple epitaxial processes are performed.

According to an embodiment of the present invention, there is provided an alignment mark pattern, including: a first region, including a plurality of first line segments and a plurality of first gaps, alternately arranged with each other and extending in a first direction, wherein the first region The width of a line segment is different from the width of the first gap; a second area includes a plurality of second line segments and a plurality of second gaps, alternately arranged with each other, extending in the first direction, the second area and the first gap A zone is arranged diagonally, wherein the width of the second line segment is different from the width of the second gap; a third zone includes a plurality of third line segments and a plurality of third gaps, alternately arranged with each other, extending in a second direction , The second direction is perpendicular to the first direction, the third area is adjacent to the first area and the second area, wherein the width of the third line segment is different from the width of the third gap; and a fourth area , Including a plurality of fourth line segments and a plurality of fourth gaps, alternately arranged with each other, extending in the second direction, the fourth area and the third area are arranged diagonally, the fourth area is opposite to the first area and the first area The two areas are adjacent, and the width of the fourth line segment is different from the width of the fourth gap.

In some embodiments, the sum of the width of a first line segment and the width of a first gap is greater than or less than the sum of the width of a second line segment and the width of a second gap.

In some embodiments, when the sum of the width of a first line segment and the width of a first gap is greater than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is equal to The sum of the width of the first gap is approximately 11.6-26.6 microns, and the sum of the width of a second line segment and the width of a second gap is approximately 10-25 microns. In some embodiments, when the width of a first line segment is When the sum of the width of a gap is greater than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is approximately 1.8-12.8, and the width of a first gap is approximately 6.3-24.8 , And the width of the first gap is greater than the width of the first line segment, the width of a second line segment is about 1-12 microns, the width of a second gap is about 5.5-24 microns, and the second gap The width of is greater than the width of the second line segment.

In some embodiments, when the sum of the width of a first line segment and the width of a first gap is less than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is equal to The sum of the width of the first gap is approximately 10-25 microns, and the sum of the width of a second line segment and the width of a second gap is approximately 11.6-26.6 microns. In some embodiments, when the sum of the width of a first line segment and the width of a first gap is less than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is approximately between In 1-12, the width of a first gap is approximately 5.5-24, and the width of the first gap is greater than the width of the first line segment, and the width of a second line segment is approximately 1.8-12.8 microns. The width of the two gaps is approximately between 6.3-24.8 microns, and the width of the second gap is greater than the width of the second line segment.

In some embodiments, the sum of the width of a third line segment and the width of a third gap is greater than or less than the sum of the width of a fourth line segment and the width of a fourth gap.

In some embodiments, when the sum of the width of a third line segment and the width of a third gap is greater than the sum of the width of a fourth line segment and the width of a fourth gap, the width of a third line segment is equal to the width of a third gap. The sum of the width of the gap is approximately 11.6-26.6 microns, and the sum of the width of a fourth line segment and the width of a fourth gap is approximately 10-25 microns. In some embodiments, when the width of a third line segment is When the sum of the width of the three gaps is greater than the sum of the width of a fourth line segment and the width of a fourth gap, the width of a third line segment is approximately 1.8-12.8, and the width of a third gap is approximately 6.3-24.8. And the width of the third gap is greater than the width of the third line segment, the width of a fourth line segment is about 1-12 microns, the width of a fourth gap is about 5.5-24 microns, and the width of the fourth gap Greater than the width of the fourth line segment.

In some embodiments, when the sum of the width of a third line segment and the width of a third gap is less than the sum of the width of a fourth line segment and the width of a fourth gap, the width of a third line segment is equal to the width of a third gap. The sum of the width of the gap is about 10-25 microns, and the sum of the width of a fourth line segment and the width of a fourth gap is about 11.6-26.6 microns. In some embodiments, when the sum of the width of a third line segment and the width of a third gap is less than the sum of the width of a fourth line segment and the width of a fourth gap, the width of a third line segment is about 1. -12, the width of a third gap is approximately 5.5-24, and the width of the third gap is greater than the width of the third line segment, the width of a fourth line segment is approximately 1.8-12.8 microns, and the width of a fourth gap The width is about 6.3-24.8 microns, and the width of the fourth gap is greater than the width of the fourth line segment.

In some embodiments, the alignment mark pattern of the present invention further includes a cross-shaped pattern disposed between the first area and the second area, and between the third area and the fourth area. In some embodiments, the cross-shaped pattern includes a fifth line segment and a sixth line segment, and the fifth line segment is perpendicular to the sixth line segment. In some embodiments, the width of the fifth line segment and the sixth line segment is between 3-17 microns. In some embodiments, the length of the fifth line segment and the sixth line segment is between 50-100 microns.

According to an embodiment of the present invention, there is provided a wafer structure, including: a wafer having a plurality of marking areas; a material layer formed on the wafer; The above-mentioned alignment mark patterns are arranged on the material layer and located in the mark areas of the wafer.

In some embodiments, the marking areas are adjacent to the edge of the wafer. In some embodiments, the material layer includes an epitaxial layer. In some embodiments, the thickness of the material layer is approximately 6-10 microns. In some embodiments, the alignment mark patterns are arranged oppositely.

The present invention responds to the process requirements according to the appropriate single line/space width sum (pitch) size condition (for example, the single line segment/space width sum (pitch) size is between 10-25 microns), by different The alignment mark pattern composed of the line segment/gap size and the gap size is larger than the line segment size is designed to perform alignment operations in the semiconductor manufacturing process. Because it is different from the traditional design of making the line segment/gap into the same size, the gap size is designed to be larger than the line segment size, so that even in the case of multiple epitaxial processes, the gap size is sufficiently deep/wide to accommodate More epitaxial materials are contained therein, so that the alignment mark pattern can still maintain a fairly good exposure signal intensity, which effectively improves the traditional stepper's effect on the increase in the number of epitaxial processes or the thickness of the epitaxial layer. Quasi-marks expose the problem of poor signal capture. The present invention does not need to resort to the method of adding additional alignment mark patterns on other layers, that is, the subsequent alignment process can be continued, which not only effectively reduces the overall production cost, but also avoids the process time required for additional processes .

10: Align the marking pattern

10’: Mask

10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t: alignment mark pattern

12: District 1

14: Second District

16: Third District

18: District 4

20a: first line segment

20b: first gap

22: First direction

24a: second line segment

24b: second gap

26a: third line segment

26b: third gap

28: second direction

30a: fourth line segment

30b: The fourth gap

32: The sum of the width of the first line segment and the width of the first gap

34: The sum of the width of the second line segment and the width of the second gap

36: The sum of the width of the third line segment and the width of the third gap

38: The sum of the width of the fourth line segment and the width of the fourth gap

40: cross pattern

42: Fifth line segment

44: The sixth line segment

100: Wafer structure

102: Wafer

102’: the edge of the wafer

104: mark area

106: Material layer

R13: The distance between the first zone and the third zone

R14: The distance between the first zone and the fourth zone

R23: The distance between the second zone and the third zone

R24: The distance between the second zone and the fourth zone

Ra: the distance between the first zone and the second zone

Rb: The distance between the third zone and the fourth zone

L: The length of the fifth line segment and the sixth line segment

W: The width of the fifth line segment and the sixth line segment

W1a: the width of the first line segment

W1b: width of the first gap

W2a: the width of the second line segment

W2b: the width of the second gap

W3a: the width of the third line segment

W3b: width of the third gap

W4a: width of the fourth line segment

W4b: width of the fourth gap

Figure 1 is a top view of an alignment mark pattern according to an embodiment of the present invention; Figure 2 is a top view of a wafer structure including alignment mark patterns according to an embodiment of the present invention; Figure 3 is an alignment mark pattern composed of different line segments/gap sizes according to an embodiment of the present invention Verification method of the relationship with the exposure signal; FIG. 4 is a diagram of the relationship between the alignment mark pattern composed of different line segments/gap sizes and the exposure signal according to an embodiment of the present invention.

Please refer to FIG. 1. According to an embodiment of the present invention, an alignment mark pattern 10 is provided. FIG. 1 is a top view of the alignment mark pattern 10.

As shown in FIG. 1, an alignment mark pattern 10 includes a first area 12, a second area 14, a third area 16, and a fourth area 18. The first area 12 includes a plurality of first line segments 20a and a plurality of first gaps 20b. The first gaps 20b are respectively located between the first line segments 20a. The first line segments 20a are parallel to each other and extend in the first direction 22. Note that the width W1a of the first line segment 20a is different from the width W1b of the first gap 20b. The second area 14 includes a plurality of second line segments 24a and a plurality of second gaps 24b. The second gaps 24b are respectively located between the second line segments 24a. The second line segments 24a are parallel to each other and extend in the first direction 22. The second area 14 It is arranged diagonally to the first area 12 and separated by a certain distance Ra. It is worth noting that the width W2a of the second line segment 24a is different from the width W2b of the second gap 24b. The third area 16 includes a plurality of third line segments 26a and a plurality of third gaps 26b. The third gaps 26b are respectively located between the third line segments 26a. The third line segments 26a are parallel to each other and extend in the second direction 28. The second direction 28 vertical In the first direction 22, the third zone 16 is adjacent to the first zone 12 and separated by a certain distance R13, the third zone 16 is adjacent to the second zone 14 and separated by a certain distance R23, and the third zone 16 is separated from the first The zones 12 are arranged along the second direction 28, and the third zone 16 and the second zone 14 are arranged along the first direction 22. It should be noted that the width W3a of the third line segment 26a is different from the width W3b of the third gap 26b. The fourth area 18 includes a plurality of fourth line segments 30a and a plurality of fourth gaps 30b. The fourth gaps 30b are respectively located between the fourth line segments 30a. The fourth line segments 30a are parallel to each other and extend in the second direction 28. The fourth area 18 Diagonally arranged with the third zone 16 and separated by a certain distance Rb, the fourth zone 18 is adjacent to the first zone 12 and separated by a certain distance R14, and the fourth zone 18 is adjacent to the second zone 14 and separated by a certain distance R24 , The fourth area 18 and the first area 12 are arranged along the first direction 22, and the fourth area 18 and the second area 14 are arranged along the second direction 28. It is worth noting that the width W4a of the fourth line segment 30a and the fourth gap 30b The width W4b is different.

In some embodiments, the first zone 12 and the second zone 14 are separated by a specific distance Ra, the third zone 16 and the fourth zone 18 are separated by a specific distance Rb, the first zone 12 and the third zone 16 are separated The specific distance R13, the specific distance R14 between the first zone 12 and the fourth zone 18, the specific distance R23 between the second zone 14 and the third zone 16, and the specific distance between the second zone 14 and the fourth zone 18 The distance R24 may include any suitable distance to meet the specifications of the alignment mark pattern 10.

First, the structural features of each line segment/gap in the first zone 12 and the second zone 14 are explained.

In some embodiments, the sum (pitch) 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b may be greater or smaller than the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b ( pitch) 34.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is greater than the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b, the first line The sum 32 of the width W1a of the segment 20a and the width W1b of the first gap 20b is approximately between 11.6-26.6 microns, for example, 11.6, 17.6, or 26.6 microns. The width W2a of the second line segment 24a and the width W2b of the second gap 24b are less than The sum 34 is approximately between 10-25 microns, such as 10, 16, or 25 microns. In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is greater than the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b, the first line The width W1a of the segment 20a is approximately 1.8-12.8 microns, the width W1b of the first gap 20b is approximately 6.3-24.8 microns, and the width W1b of the first gap 20b is greater than the width W1a of the first line segment 20a, and the second line segment 24a The width W2a of the second gap 24b is about 1-12 microns, the width W2b of the second gap 24b is about 5.5-24 microns, and the width W2b of the second gap 24b is greater than the width W2a of the second line segment 24a.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 11.6 microns, the width W1a of the first line segment 20a and the width W1b of the first gap 20b may include each other. Any combination of unequal sizes, for example, (1) the width W1a of the first line segment 20a is approximately 1.8 microns, the width W1b of the first gap 20b is approximately 9.8 microns, and (2) the width W1a of the first line segment 20a is approximately 2.3 microns, the width W1b of the first gap 20b is approximately 9.3 microns, (3) the width W1a of the first line segment 20a is approximately 2.8 microns, the width W1b of the first gap 20b is approximately 8.8 microns, (4) the first line segment The width W1a of 20a is approximately 3.3 microns, the width W1b of the first gap 20b is approximately 8.3 microns, and (5) the width W1a of the first line segment 20a is approximately The width W1b of the first gap 20b is approximately 7.8 micrometers, (6) the width W1a of the first line segment 20a is approximately 4.3 micrometers, the width W1b of the first gap 20b is approximately 7.3 micrometers, and (7) the first line The width W1a of the segment 20a is approximately 4.8 microns, the width W1b of the first gap 20b is approximately 6.8 microns, or (8) the width W1a of the first line segment 20a is approximately 5.3 microns, and the width W1b of the first gap 20b is approximately 6.3 microns (The sum (pitch) 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is both 11.6 microns).

At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 10 microns, and the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of sizes that are not equal to each other, For example, (1) the width W2a of the second line segment 24a is approximately 1 micrometer, the width W2b of the second gap 24b is approximately 9 micrometers, (2) the width W2a of the second line segment 24a is approximately 1.5 micrometers, and the width of the second gap 24b W2b is about 8.5 microns, (3) the width W2a of the second line segment 24a is about 2 microns, the width W2b of the second gap 24b is about 8 microns, (4) the width W2a of the second line segment 24a is about 2.5 microns, and the second The width W2b of the gap 24b is approximately 7.5 microns, (5) the width W2a of the second line segment 24a is approximately 3 microns, the width W2b of the second gap 24b is approximately 7 microns, and (6) the width W2a of the second line segment 24a is approximately 3.5 Micrometers, the width W2b of the second gap 24b is approximately 6.5 micrometers, (7) the width W2a of the second line segment 24a is approximately 4 micrometers, the width W2b of the second gap 24b is approximately 6 micrometers, or (8) the width of the second line segment 24a The width W2a is approximately 4.5 microns, and the width W2b of the second gap 24b is approximately 5.5 microns (the total pitch 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 10 microns). In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 microns, for example For example, the width W1a of the first line segment 20a is greater than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 micrometer.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 17.6 micrometers, the width W1a of the first line segment 20a and the width W1b of the first gap 20b may include each other. Any combination of unequal sizes, for example, (1) the width W1a of the first line segment 20a is approximately 1.8 microns, the width W1b of the first gap 20b is approximately 15.8 microns, and (2) the width W1a of the first line segment 20a is approximately 2.3 microns, the width W1b of the first gap 20b is approximately 15.3 microns, (3) the width W1a of the first line segment 20a is approximately 2.8 microns, the width W1b of the first gap 20b is approximately 14.8 microns, (4) the first line segment The width W1a of 20a is approximately 3.3 microns, the width W1b of the first gap 20b is approximately 14.3 microns, (5) the width W1a of the first line segment 20a is approximately 3.8 microns, and the width W1b of the first gap 20b is approximately 13.8 microns. 6) The width W1a of the first line segment 20a is approximately 4.3 microns, the width W1b of the first gap 20b is approximately 13.3 microns, (7) the width W1a of the first line segment 20a is approximately 4.8 microns, and the width W1b of the first gap 20b (8) The width W1a of the first line segment 20a is approximately 5.3 μm, the width W1b of the first gap 20b is approximately 12.3 μm, and (9) the width W1a of the first line segment 20a is approximately 5.8 μm. The width W1b of a gap 20b is about 11.8 microns, (10) the width W1a of the first line segment 20a is about 6.3 microns, the width W1b of the first gap 20b is about 11.3 microns, and (11) the width W1a of the first line segment 20a It is about 6.8 microns, the width W1b of the first gap 20b is about 10.8 microns, (12) the width W1a of the first line segment 20a is about 7.3 microns, and the width W1b of the first gap 20b is large (13) The width W1a of the first line segment 20a is approximately 7.8 micrometers, the width W1b of the first gap 20b is approximately 9.8 micrometers, or (14) the width W1a of the first line segment 20a is approximately 8.3 micrometers, The width W1b of the first gap 20b is approximately 9.3 micrometers (the total pitch 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 17.6 micrometers).

At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 16 microns, and the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of sizes that are not equal to each other. For example, (1) the width W2a of the second line segment 24a is approximately 1 micrometer, the width W2b of the second gap 24b is approximately 15 micrometers, (2) the width W2a of the second line segment 24a is approximately 1.5 micrometers, and the width of the second gap 24b W2b is approximately 14.5 microns, (3) the width W2a of the second line segment 24a is approximately 2 microns, the width W2b of the second gap 24b is approximately 14 microns, (4) the width W2a of the second line segment 24a is approximately 2.5 microns, and the second The width W2b of the gap 24b is approximately 13.5 microns, (5) the width W2a of the second line segment 24a is approximately 3 microns, the width W2b of the second gap 24b is approximately 13 microns, and (6) the width W2a of the second line segment 24a is approximately 3.5 Micrometers, the width W2b of the second gap 24b is approximately 12.5 micrometers, (7) the width W2a of the second line segment 24a is approximately 4 micrometers, the width W2b of the second gap 24b is approximately 12 micrometers, and (8) the width of the second line segment 24a W2a is about 4.5 microns, the width W2b of the second gap 24b is about 11.5 microns, (9) the width W2a of the second line segment 24a is about 5 microns, the width W2b of the second gap 24b is about 11 microns, (10) the second The width W2a of the line segment 24a is about 5.5 microns, the width W2b of the second gap 24b is about 10.5 microns, (11) the width W2a of the second line segment 24a is about 6 microns, and the width W2b of the second gap 24b is about 10 microns. 12) The width W2a of the second line segment 24a is approximately 6.5 microns, the width W2b of the second gap 24b is approximately 9.5 microns, (13) the width W2a of the second line segment 24a is approximately 7 microns, and the width W2b of the second gap 24b is approximately 9 microns, or (14) the second line segment 24a The width W2a of the second gap 24b is approximately 7.5 micrometers, and the width W2b of the second gap 24b is approximately 8.5 micrometers (the total pitch 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 16 micrometers). In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 micrometers. For example, the width W1a of the first line segment 20a is greater than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 micrometer.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 26.6 microns, the width W1a of the first line segment 20a and the width W1b of the first gap 20b may include each other. Any combination of unequal sizes, for example, (1) the width W1a of the first line segment 20a is approximately 1.8 microns, the width W1b of the first gap 20b is approximately 24.8 microns, and (2) the width W1a of the first line segment 20a is approximately 2.3 microns, the width W1b of the first gap 20b is approximately 24.3 microns, (3) the width W1a of the first line segment 20a is approximately 2.8 microns, the width W1b of the first gap 20b is approximately 23.8 microns, (4) the first line segment The width W1a of 20a is approximately 3.3 microns, the width W1b of the first gap 20b is approximately 23.3 microns, (5) the width W1a of the first line segment 20a is approximately 3.8 microns, and the width W1b of the first gap 20b is approximately 22.8 microns. 6) The width W1a of the first line segment 20a is approximately 4.3 microns, the width W1b of the first gap 20b is approximately 22.3 microns, (7) the width W1a of the first line segment 20a is approximately 4.8 microns, and the width W1b of the first gap 20b About 21.8 microns, (8) The width W1a of the first line segment 20a is about The width W1b of the first gap 20b is approximately 21.3 micrometers, (9) the width W1a of the first line segment 20a is approximately 5.8 micrometers, the width W1b of the first gap 20b is approximately 20.8 micrometers, and (10) the first line The width W1a of the segment 20a is about 6.3 microns, the width W1b of the first gap 20b is about 20.3 microns, (11) the width W1a of the first line segment 20a is about 6.8 microns, and the width W1b of the first gap 20b is about 19.8 microns. (12) The width W1a of the first line segment 20a is approximately 7.3 microns, the width W1b of the first gap 20b is approximately 19.3 microns, (13) the width W1a of the first line segment 20a is approximately 7.8 microns, and the width of the first gap 20b W1b is approximately 18.8 microns, (14) the width W1a of the first line segment 20a is approximately 8.3 microns, the width W1b of the first gap 20b is approximately 18.3 microns, and (15) the width W1a of the first line segment 20a is approximately 8.8 microns, The width W1b of the first gap 20b is approximately 17.8 micrometers, (16) the width W1a of the first line segment 20a is approximately 9.3 micrometers, the width W1b of the first gap 20b is approximately 17.3 micrometers, and (17) the width of the first line segment 20a W1a is about 9.8 microns, the width W1b of the first gap 20b is about 16.8 microns, (18) the width W1a of the first line segment 20a is about 10.3 microns, and the width W1b of the first gap 20b is about 16.3 microns, (19) The width W1a of a line segment 20a is approximately 10.8 microns, the width W1b of the first gap 20b is approximately 15.8 microns, (20) the width W1a of the first line segment 20a is approximately 11.3 microns, and the width W1b of the first gap 20b is approximately 15.3 microns. Micrometers, (21) the width W1a of the first line segment 20a is approximately 11.8 micrometers, the width W1b of the first gap 20b is approximately 14.8 micrometers, (22) the width W1a of the first line segment 20a is approximately 12.3 micrometers, and the first gap 20b The width W1b of the first line segment 20a is approximately 14.3 microns, or (23) the width W1a of the first line segment 20a is approximately 12.8 microns, and the width W1b of the first gap 20b is approximately 13.8 microns (the width W1a of the first line segment 20a and the first gap 20b The sum (pitch) 32 of the width W1b is 26.6 microns).

At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 25 microns, and the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of sizes that are not equal to each other, For example, (1) the width W2a of the second line segment 24a is approximately 1 micrometer, the width W2b of the second gap 24b is approximately 24 micrometers, (2) the width W2a of the second line segment 24a is approximately 1.5 micrometers, and the width of the second gap 24b W2b is approximately 23.5 microns, (3) the width W2a of the second line segment 24a is approximately 2 microns, the width W2b of the second gap 24b is approximately 23 microns, (4) the width W2a of the second line segment 24a is approximately 2.5 microns, and the second The width W2b of the gap 24b is approximately 22.5 microns, (5) the width W2a of the second line segment 24a is approximately 3 microns, the width W2b of the second gap 24b is approximately 22 microns, and (6) the width W2a of the second line segment 24a is approximately 3.5 Micrometers, the width W2b of the second gap 24b is approximately 21.5 micrometers, (7) the width W2a of the second line segment 24a is approximately 4 micrometers, the width W2b of the second gap 24b is approximately 21 micrometers, and (8) the width of the second line segment 24a W2a is approximately 4.5 microns, the width W2b of the second gap 24b is approximately 20.5 microns, (9) the width W2a of the second line segment 24a is approximately 5 microns, and the width W2b of the second gap 24b is approximately 20 microns, (10) the second The width W2a of the line segment 24a is approximately 5.5 microns, the width W2b of the second gap 24b is approximately 19.5 microns, (11) the width W2a of the second line segment 24a is approximately 6 microns, and the width W2b of the second gap 24b is approximately 19 microns. 12) The width W2a of the second line segment 24a is approximately 6.5 microns, the width W2b of the second gap 24b is approximately 18.5 microns, (13) the width W2a of the second line segment 24a is approximately 7 microns, and the width W2b of the second gap 24b is approximately 18 microns, (14) the width W2a of the second line segment 24a is approximately 7.5 microns, the width W2b of the second gap 24b is approximately 17.5 microns, (15) the width W2a of the second line segment 24a is approximately 8 microns, and the width of the second gap 24b The width W2b is about 17 microns, (16) the second line segment 24a The width W2a of the second gap 24b is about 8.5 microns, the width W2b of the second gap 24b is about 16.5 microns, (17) the width W2a of the second line segment 24a is about 9 microns, and the width W2b of the second gap 24b is about 16 microns, (18) The width W2a of the second line segment 24a is approximately 9.5 microns, the width W2b of the second gap 24b is approximately 15.5 microns, (19) the width W2a of the second line segment 24a is approximately 10 microns, and the width W2b of the second gap 24b is approximately 15 microns , (20) The width W2a of the second line segment 24a is about 10.5 microns, the width W2b of the second gap 24b is about 14.5 microns, (21) the width W2a of the second line segment 24a is about 11 microns, and the width W2b of the second gap 24b (22) The width W2a of the second line segment 24a is approximately 11.5 micrometers, the width W2b of the second gap 24b is approximately 13.5 micrometers, or (23) the width W2a of the second line segment 24a is approximately 12 micrometers, the second The width W2b of the gap 24b is approximately 13 micrometers (the total pitch 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is both 25 micrometers). In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 micrometers. For example, the width W1a of the first line segment 20a is greater than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 micrometer.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is smaller than the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b, the first line The sum 32 of the width W1a of the segment 20a and the width W1b of the first gap 20b is approximately 10-25 microns, such as 10, 16, or 25 microns. The width W2a of the second line segment 24a and the width W2b of the second gap 24b are less than The sum 34 is approximately between 11.6-26.6 microns, for example, 11.6, 17.6, or 26.6 microns. In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is smaller than the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b, the first line The width W1a of the segment 20a is about 1-12 microns, the width W1b of the first gap 20b is about 5.5-24 microns, and the width W1b of the first gap 20b is greater than the width W1a of the first line segment 20a, and the second line segment 24a The width W2a of the second gap 24b is approximately 1.8-12.8 microns, the width W2b of the second gap 24b is approximately 6.3-24.8 microns, and the width W2b of the second gap 24b is greater than the width W2a of the second line segment 24a.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 10 microns (the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 34) Correspondingly when it is 11.6 microns), the width W1a of the first line segment 20a and the width W1b of the first gap 20b may include any combination of dimensions that are not equal to each other as listed above (only the width W1a of the first line segment 20a and the first The total (pitch) 32 of the width W1b of the gap 20b is only 10 microns). Similarly, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of dimensions that are not equal to each other as listed above ( It is sufficient that the sum (pitch) 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b meets 11.6 micrometers), and various size combinations are not repeated here. In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 micrometers. For example, the width W1a of the first line segment 20a is smaller than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is smaller than the width W2b of the second gap 24b by about 0.8 micrometers.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 16 microns (the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 34) Correspondingly when it is 17.6 microns), the width W1a of the first line segment 20a and the width W1b of the first gap 20b can include any combination of dimensions that are not equal to each other as listed above (only the width W1a of the first line segment 20a and the first The total (pitch) 32 of the width W1b of the gap 20b is only 16 microns). Similarly, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of dimensions that are not equal to each other as listed above ( It is only necessary that the sum (pitch) 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b meets 17.6 micrometers), and the various size combinations will not be repeated here. In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 micrometers. For example, the width W1a of the first line segment 20a is smaller than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is smaller than the width W2b of the second gap 24b by about 0.8 micrometers.

In some embodiments, when the sum 32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b is 25 microns (the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 34) Correspondingly when it is 26.6 microns), the width W1a of the first line segment 20a and the width W1b of the first gap 20b may include any combination of dimensions that are not equal to each other as listed above (only the width W1a of the first line segment 20a and the first The total pitch 32 of the width W1b of the gap 20b may be 25 microns). Similarly, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of sizes that are not equal to each other as listed above ( Only the width of the second line segment 24a The sum (pitch) 34 of W2a and the width W2b of the second gap 24b is only 26.6 microns), and various size combinations will not be repeated here. In some embodiments, the width W1a of the first line segment 20a differs from the width W2a of the second line segment 24a by about 0.8 micrometers. For example, the width W1a of the first line segment 20a is smaller than the width W2a of the second line segment 24a by about 0.8 micrometers. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are also different by about 0.8 micrometers. For example, the width W1b of the first gap 20b is smaller than the width W2b of the second gap 24b by about 0.8 micrometers.

Next, the structural features of each line segment/gap in the third area 16 and the fourth area 18 are described.

In some embodiments, the sum (pitch) 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b may be greater or smaller than the sum of the width W4a of the fourth line segment 30a and the width W4b of the second gap 30b (pitch). ) 38.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is greater than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the third line segment 26a The sum 36 of the width W3a of the third gap 26b and the width W3b of the third gap 26b is approximately between 11.6-26.6 microns, for example, 11.6, 17.6, or 26.6 microns. The sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is 38 Approximately between 10-25 microns, such as 10, 16, or 25 microns. In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is greater than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the third line segment 26a The width W3a of the third gap 26b is about 1.8-12.8 microns, the width W3b of the third gap 26b is about 6.3-24.8 microns, and the width W3b of the third gap 26b is greater than the width W3a of the third line segment 26a. The width W4a of the segment 30a is about 1-12 microns, the width W4b of the fourth gap 30b is about 5.5-24 microns, and the width W4b of the fourth gap 30b is greater than the width W4a of the fourth line segment 30a.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 11.6 microns (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 10 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b may include any combination of dimensions that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the third gap 26b are The total (pitch) 36 of the width W3b can be 11.6 microns). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include any combination of sizes that are not equal to each other as listed above (only the fourth The sum (pitch) 38 of the width W4a of the line segment 30a and the width W4b of the fourth gap 30b is only 10 micrometers), and various size combinations are not repeated here. In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. For example, the width W3a of the third line segment 26a is greater than the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also different by about 0.8 micrometers. For example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 17.6 microns (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 16 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b may include any combination of dimensions that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the first The total (pitch) 36 of the width W3b of the three gaps 26b is only 17.6 micrometers). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include any combination of sizes that are not equal to each other as listed above. (Only the sum (pitch) 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is 16 microns), and various size combinations will not be repeated here. In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. For example, the width W3a of the third line segment 26a is greater than the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also different by about 0.8 micrometers. For example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 26.6 micrometers (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 25 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b can include any combination of dimensions that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the third gap 26b are The sum (pitch) 36 of the width W3b can be 26.6 microns). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include any combination of sizes that are not equal to each other as listed above (only the fourth The total (pitch) 38 of the width W4a of the line segment 30a and the width W4b of the fourth gap 30b should be 25 microns), and various size combinations will not be repeated here. In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. For example, the width W3a of the third line segment 26a is greater than the width W4a of the fourth line segment 30a by approximately 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also greatly different For example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is smaller than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the third line segment 26a The sum 36 of the width W3a of the third gap 26b and the width W3b of the third gap 26b is about 10-25 microns, such as 10, 16, or 25 microns. The sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is 38 Approximately between 11.6-26.6 microns, such as 11.6, 17.6, or 26.6 microns. In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is smaller than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the third line segment 26a The width W3a of the third gap 26b is about 1-12 microns, the width W3b of the third gap 26b is about 5.5-24 microns, and the width W3b of the third gap 26b is greater than the width W3a of the third line segment 26a, and the width W4a of the fourth line segment 30a The width W4b of the fourth gap 30b is approximately between 1.8-12.8 microns, and the width W4b of the fourth gap 30b is approximately between 6.3-24.8 microns, and the width W4b of the fourth gap 30b is greater than the width W4a of the fourth line segment 30a.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 10 microns (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 11.6 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b can include any combination of dimensions that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the third gap 26b are The total (pitch) 36 of the width W3b may be 10 microns). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include As listed above, any combination of sizes that are not equal to each other (only the total pitch 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b meets 11.6 microns), the various size combinations will not be repeated here . In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by about 0.8 micrometers. For example, the width W3a of the third line segment 26a is smaller than the width W4a of the fourth line segment 30a by about 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also different by about 0.8 micrometers. For example, the width W3b of the third gap 26b is smaller than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 16 microns (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 17.6 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b may include any combination of sizes that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the third gap 26b are The total (pitch) 36 of the width W3b can be 16 microns). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include any combination of sizes that are not equal to each other as listed above (only the fourth The total (pitch) 38 of the width W4a of the line segment 30a and the width W4b of the fourth gap 30b is only 17.6 micrometers), and various size combinations are not repeated here. In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by about 0.8 micrometers. For example, the width W3a of the third line segment 26a is smaller than the width W4a of the fourth line segment 30a by about 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also different by about 0.8 micrometers. For example, the width W3b of the third gap 26b is smaller than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is 25 microns (the sum of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b corresponds to 38 When the ground is 26.6 microns), the width W3a of the third line segment 26a and the width W3b of the third gap 26b may include any combination of dimensions that are not equal to each other as listed above (only the width W3a of the third line segment 26a and the third gap 26b are The total (pitch) 36 of the width W3b is sufficient to meet 25 microns). Similarly, the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b may include any combination of sizes that are not equal to each other as listed above (only the fourth The total (pitch) 38 of the width W4a of the line segment 30a and the width W4b of the fourth gap 30b should be 26.6 microns), and various size combinations will not be repeated here. In some embodiments, the width W3a of the third line segment 26a differs from the width W4a of the fourth line segment 30a by about 0.8 micrometers. For example, the width W3a of the third line segment 26a is smaller than the width W4a of the fourth line segment 30a by about 0.8 micrometers. Similarly, the width W3b of the third gap 26b and the width W4b of the fourth gap 30b are also different by about 0.8 micrometers. For example, the width W3b of the third gap 26b is smaller than the width W4b of the fourth gap 30b by about 0.8 micrometers.

In some embodiments, the alignment mark pattern 10 of the present invention further includes a cross-shaped pattern 40 disposed between the first area 12 and the second area 14 and between the third area 16 and the fourth area 18. In some embodiments, the cross-shaped pattern 40 includes a fifth line segment 42 and a sixth line segment 44, and the fifth line segment 42 is perpendicular to the sixth line segment 44. In some embodiments, the width W of the fifth line segment 42 and the sixth line segment 44 is approximately 3-17 microns. In some embodiments, the length L of the fifth line segment 42 and the sixth line segment 44 is about 50-100 microns.

Please refer to FIG. 2. According to an embodiment of the present invention, a crystal including an alignment mark pattern 10 as shown in FIG. 1 is provided. Circle structure 100. FIG. 2 is a top view of the wafer structure 100 including the alignment mark pattern 10 shown in FIG. 1.

As shown in FIG. 2, the wafer structure 100 includes: a wafer 102 with a plurality of marking regions 104; a material layer 106 formed on the wafer 102; and a plurality of alignment mark patterns 10 as shown in FIG. 1, It is disposed on the material layer 106 and located in the marking area 104 of the wafer 102.

In some embodiments, the marking area 104 is adjacent to the edge 102' of the wafer 102. In some embodiments, the material layer 106 may include an epitaxial layer. In some embodiments, the thickness of the material layer 106 is approximately 6-10 microns. In some embodiments, the alignment mark patterns 10 are arranged oppositely, as shown in FIG. 2.

Example 1

Verify the relationship between the alignment mark pattern composed of different line segments/gap sizes and the exposure signal.

Referring to Fig. 3, the method for verifying the relationship between the alignment mark pattern composed of different line segments/gap sizes and the exposure signal is as follows: First, a wafer 102 is provided. After that, an epitaxial material layer 106 with a thickness of 8 microns is formed on the wafer 102. After that, use the mask 10' to align the 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o) on the mask 10' , 10p, 10q, 10r, 10s, 10t) are exposed and formed on the epitaxial material layer 106, respectively located in the two marking areas 104 of the wafer 102. In this embodiment (please refer to Figure 1), 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) in the first region 12, the sum of the width W1a of the first line segment 20a and the width W1b of the first gap 20b (pitch) 32 is 17.6 microns, located in the fourth region 18 The sum (pitch) 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is 17.6 microns, and the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b located in the second region 14 The (pitch) 34 is 16 microns, and the sum (pitch) 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b located in the third region 16 is 16 microns. 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) each The line segment/gap size distribution from left to right and top to bottom are as shown in Table 1:

Then, the 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q) on the epitaxial material layer 106 , 10r, 10s, 10t) for the first exposure signal test, the measured exposure signal intensity changes like curve A (gap depth is 120nm) and curve B (gap depth is 150nm), as shown in Figure 4. Shown. After that, a second epitaxial material layer (not shown) with a thickness of 6 μm is formed on the epitaxial material layer 106. Then, the 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q) on the epitaxial material layer 106 , 10r, 10s, 10t) for the second exposure signal test, the measured exposure signal intensity changes like curve C (gap depth is 120nm) and curve D (gap depth is 150nm), as shown in Figure 4. Shown. After that, a third epitaxial material layer (not shown) with a thickness of 2 microns is formed on the second epitaxial material layer. Afterwards, the epitaxial material layer 106 The above 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) are performed In the third exposure signal test, the measured exposure signal intensity changes like curve E (gap depth is 120nm) and curve F (gap depth is 150nm), as shown in Figure 4.

It can be seen from Figure 4 that when the second exposure signal test is performed on the 20 sets of alignment mark patterns on the epitaxial material layer 106 (at this time, the alignment mark patterns are covered with a second 6-micron thick Epitaxial material layer), which has 12 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, etc.) with different line segment/gap sizes and the gap size is larger than the line segment size 10l) can reach an exposure signal intensity of 1 or more. Similarly, when the third exposure signal test is performed on the 20 sets of alignment mark patterns on the epitaxial material layer 106 (at this time, the alignment mark patterns are covered with The second epitaxial material layer with a thickness of 6 microns and the third epitaxial material layer with a thickness of 2 microns), which have 12 sets of alignment mark patterns (10a, 10b, 10c) with different line segment/gap sizes and the gap size is larger than the line segment size , 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l) can still reach the exposure signal intensity above 1. This means that with the alignment mark pattern composed of special line segments/gap sizes, the present invention can maintain a fairly good exposure signal intensity even when multiple epitaxial processes are implemented, without the need for additional By aligning the mark pattern, the subsequent alignment process can be continued.

The present invention responds to the process requirements according to the appropriate single line/space width sum (pitch) size condition (for example, the single line segment/space width sum (pitch) size is between 10-25 microns), by different The alignment mark pattern composed of the line segment/gap size and the gap size is larger than the line segment size is used in the semiconductor manufacturing process Align the job. Because it is different from the traditional design of making the line segment/gap into the same size, the gap size is designed to be larger than the line segment size, so that even in the case of multiple epitaxial processes, the gap size is sufficiently deep/wide to accommodate More epitaxial materials are contained therein, so that the alignment mark pattern can still maintain a fairly good exposure signal intensity, which effectively improves the traditional stepper's effect on the increase in the number of epitaxial processes or the thickness of the epitaxial layer. Quasi-marks expose the problem of poor signal capture. The present invention does not need to resort to the method of adding additional alignment mark patterns on other layers, that is, the subsequent alignment process can be continued, which not only effectively reduces the overall production cost, but also avoids the process time required for additional processes .

The features of the above-mentioned embodiments are beneficial to those skilled in the art to understand the present invention. Those skilled in the art should understand that the present invention can be used as a basis to design and change other processes and structures to achieve the same purpose and/or the same advantages of the above-mentioned embodiments. Those with ordinary knowledge in the art should also understand that these equivalent substitutions do not depart from the spirit and scope of the present invention, and can be changed, replaced, or changed without departing from the spirit and scope of the present invention.

10: Align the marking pattern

12: District 1

14: Second District

16: Third District

18: District 4

20a: first line segment

20b: first gap

22: First direction

24a: second line segment

24b: second gap

26a: third line segment

26b: third gap

28: second direction

30a: fourth line segment

30b: The fourth gap

32: The sum of the width of the first line segment and the width of the first gap

34: The sum of the width of the second line segment and the width of the second gap

36: The sum of the width of the third line segment and the width of the third gap

38: The sum of the width of the fourth line segment and the width of the fourth gap

40: cross pattern

42: Fifth line segment

44: The sixth line segment

R13: The distance between the first zone and the third zone

R14: The distance between the first zone and the fourth zone

R23: The distance between the second zone and the third zone

R24: The distance between the second zone and the fourth zone

Ra: the distance between the first zone and the second zone

Rb: The distance between the third zone and the fourth zone

L: The length of the fifth line segment and the sixth line segment

W: The width of the fifth line segment and the sixth line segment

W1a: the width of the first line segment

W1b: width of the first gap

W2a: the width of the second line segment

W2b: the width of the second gap

W3a: the width of the third line segment

W3b: width of the third gap

W4a: width of the fourth line segment

W4b: width of the fourth gap

Claims (20)

A wafer structure includes: a wafer with a plurality of marking areas; a material layer formed on the wafer; and a plurality of alignment marking patterns arranged on the material layer and located on the markings of the wafer Area, wherein the alignment mark patterns include: a first area, including a plurality of first line segments and a plurality of first gaps, alternately arranged with each other, extending in a first direction, wherein the width of the first line segment It is different from the width of the first gap; a second area, including a plurality of second line segments and a plurality of second gaps, alternately arranged with each other, extending in the first direction, the second area and the first area are arranged diagonally , Wherein the width of the second line segment is different from the width of the second gap; a third area, including a plurality of third line segments and a plurality of third gaps, alternately arranged with each other, extending in a second direction, the second direction Perpendicular to the first direction, the third area is adjacent to the first area and the second area, wherein the width of the third line segment is different from the width of the third gap; and a fourth area including a plurality of first areas Four line segments and a plurality of fourth gaps are alternately arranged with each other, extending in the second direction, the fourth area and the third area are arranged diagonally, and the fourth area is adjacent to the first area and the second area, The width of the fourth line segment is different from the width of the fourth gap. In the wafer structure described in the first item of the patent application, the sum of the width of a first line segment and the width of a first gap is greater than or less than the sum of the width of a second line segment and the width of a second gap. The wafer structure described in item 2 of the scope of patent application, wherein when the sum of the width of a first line segment and the width of a first gap is greater than the sum of the width of a second line segment and the width of a second gap, The sum of the width of a first line segment and the width of a first gap is between 11.6-26.6 microns, and the sum of the width of a second line segment and the width of a second gap is between 10-25 microns. The wafer structure described in item 3 of the scope of patent application, wherein when the sum of the width of a first line segment and the width of a first gap is greater than the sum of the width of a second line segment and the width of a second gap, The width of a first line segment is between 1.8-12.8, the width of a first gap is between 6.3-24.8, and the width of the first gap is greater than the width of the first line segment, and the width of a second line segment is between 1. -12 microns, the width of a second gap is between 5.5-24 microns, and the width of the second gap is greater than the width of the second line segment. The wafer structure as described in item 2 of the scope of patent application, wherein when the sum of the width of a first line segment and the width of a first gap is less than the sum of the width of a second line segment and the width of a second gap, The sum of the width of a first line segment and the width of a first gap is between 10 and 25 microns, and the sum of the width of a second line segment and the width of a second gap is between 11.6 and 26.6 microns. The wafer structure described in item 5 of the scope of patent application, wherein when the sum of the width of a first line segment and the width of a first gap is less than the sum of the width of a second line segment and the width of a second gap, The width of a first line segment is between 1-12, the width of a first gap is between 5.5-24, and the width of the first gap is greater than the width of the first line segment, and the width of a second line segment is between 1.8 -12.8 microns, a second gap has a width of 6.3-24.8 microns, and the width of the second gap is greater than the width of the second line segment. For the wafer structure described in item 1 of the scope of patent application, one of the third The sum of the width of the line segment and the width of a third gap is greater than or less than the sum of the width of a fourth line segment and the width of a fourth gap. The wafer structure described in item 7 of the scope of patent application, wherein when the sum of the width of a third line segment and the width of a third gap is greater than the sum of the width of a fourth line segment and the width of a fourth gap, a The sum of the width of the third line segment and the width of a third gap is between 11.6-26.6 microns, and the sum of the width of a fourth line segment and the width of a fourth gap is between 10-25 microns. The wafer structure described in item 8 of the scope of patent application, wherein when the sum of the width of a third line segment and the width of a third gap is greater than the sum of the width of a fourth line segment and the width of a fourth gap, a The width of the third line segment is between 1.8-12.8, the width of a third gap is between 6.3-24.8, and the width of the third gap is greater than the width of the third line segment, and the width of a fourth line segment is between 1-12 microns , The width of a fourth gap is between 5.5-24 microns, and the width of the fourth gap is greater than the width of the fourth line segment. The wafer structure described in item 7 of the scope of patent application, wherein when the sum of the width of a third line segment and the width of a third gap is less than the sum of the width of a fourth line segment and the width of a fourth gap, a The sum of the width of the third line segment and the width of a third gap is between 10-25 microns, and the sum of the width of a fourth line segment and the width of a fourth gap is between 11.6-26.6 microns. The wafer structure described in item 10 of the scope of patent application, wherein when the sum of the width of a third line segment and the width of a third gap is less than the sum of the width of a fourth line segment and the width of a fourth gap, a The width of the third line segment is between 1-12, the width of a third gap is between 5.5-24, and the width of the third gap is greater than the width of the third line segment, and the width of a fourth line segment is between 1.8-12.8 microns , The width of a fourth gap It is 6.3-24.8 microns, and the width of the fourth gap is greater than the width of the fourth line segment. The wafer structure described in item 1 of the scope of patent application further includes a cross-shaped pattern disposed between the first area and the second area, and between the third area and the fourth area. According to the wafer structure described in claim 12, the cross-shaped pattern includes a fifth line segment and a sixth line segment, and the fifth line segment is perpendicular to the sixth line segment. In the wafer structure described in claim 13, wherein the width of the fifth line segment and the sixth line segment is between 3-17 microns. In the wafer structure described in claim 13, wherein the length of the fifth line segment and the sixth line segment is between 50-100 microns. The wafer structure according to claim 1, wherein the width of the first line segment is less than the width of the first gap, the width of the second line segment is less than the width of the second gap, and the width of the third line segment Is smaller than the width of the third gap, and the width of the fourth line segment is smaller than the width of the fourth gap. In the wafer structure described in item 1 of the scope of patent application, the marking areas are adjacent to the edge of the wafer. In the wafer structure described in item 1 of the scope of patent application, the material layer includes an epitaxial layer. In the wafer structure described in item 1 of the scope of patent application, the thickness of the material layer is 6-10 microns. In the wafer structure described in item 1 of the scope of patent application, the alignment mark patterns are arranged oppositely.

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