CN103513505A - Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method - Google Patents

Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method Download PDF

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Publication number
CN103513505A
CN103513505A CN201310238262.7A CN201310238262A CN103513505A CN 103513505 A CN103513505 A CN 103513505A CN 201310238262 A CN201310238262 A CN 201310238262A CN 103513505 A CN103513505 A CN 103513505A
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China
Prior art keywords
pattern
photomask
light transmitting
semi
resist
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CN201310238262.7A
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Chinese (zh)
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CN103513505B (en
Inventor
山口昇
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Hoya Corp
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Hoya Corp
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Priority to CN201510645264.7A priority Critical patent/CN105223769B/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

The present invention provides a photo mask, a photo mask manufacturing method, a pattern transfer method and a flat panel display manufacturing method. Alignment of each area is accurately performed in the photo mask in need of multiple scanning, and the implement number of a photoetching process can be restrained. The photo mask manufacturing method comprises preparing a photo mask blank obtained by forming a first etchant resist film by an upper layer film and a lower layer film which are laminated on the upper layer of a transparent substrate and made from materials which are different in exposure light transmissivity and have etching selectivity; performing a first scanning on the first etchant resist film, forming a first etchant resist pattern of provisional patterns for forming and delimiting areas of an upper layer film pattern and a lower layer film pattern; performing a first etching process on the upper layer film; forming a second etchant resist film on the whole face; performing a second scanning on the second etchant resist film, so as to form a second etchant resist pattern for forming a lower layer film pattern; performing a second etching process on the lower layer film; and performing a third etching process to remove the provisional patterns.

Description

The manufacture method of photomask and manufacture method thereof, printing transferring method and flat-panel monitor
Technical field
The manufacture method of the present invention relates to possess the manufacture method of the photomask of pattern for transfer printing, the photomask of manufacturing by this manufacture method, having used the pattern transfer-printing method of this photomask and used the flat-panel monitor of this pattern transfer-printing method.
Background technology
In the photomask using in liquid crystal indicator or large scale integrated circuit etc., when forming fine pattern, exist and need to get rid of the aligning change being caused by manufacturing process and the problem of manufacturing exactly as far as possible.
In following patent documentation 1, record following phase shifting mask, this phase shifting mask is that photomask is carried out to composition, and has formed the phase shift layer of thickness that has a phase differential of 180 ° with respect to i line and obtain to cover the mode of photomask, can form thus fine and high-precision pattern.In addition, in following patent documentation 2, recorded the manufacture method of the optical element of delimiting exactly light shielding part, transmittance section and phase shift Bu Ge region.
Patent documentation 1: TOHKEMY 2011-13283
Patent documentation 2: TOHKEMY 2011-128504
The manufacture method of the phase shifting mask of recording in patent documentation 1 is that the light shield layer on transparency carrier is carried out to composition, to cover the mode of this light shield layer, forms phase shift layer on transparency carrier, and this phase shift layer is carried out to composition.Herein, Fig. 1 shows the manufacturing process of the method based on patent documentation 1.
In Fig. 1, first, on transparency carrier 10, form light shield layer 11(with reference to Fig. 1 (a) (A)), then, on light shield layer 11, form photoresist layer 12(with reference to Fig. 1 (a) (B)).Then,, by photoresist layer 12 is exposed and developed, on light shield layer 11, form resist pattern 12P1(with reference to Fig. 1 (a) (C)).Etching mask using this resist pattern 12P1 as light shield layer 11, is etched to light shield layer 11 pattern form of regulation.Thus, on transparency carrier 10, form and be patterned into the light shield layer 11P1(of regulation shape with reference to Fig. 1 (a) (D)).After having removed resist pattern (with reference to (E) of Fig. 1 (a)), form phase shift layer 13.Phase shift layer 13 is formed on (with reference to (F) of Fig. 1 (a)) on transparency carrier 10 to cover the mode of light shield layer 11P1.
Then, on phase shift layer 13, form photoresist layer 14(with reference to Fig. 1 (a) (G)).Then, by photoresist layer 14 is exposed and developed, thereby on phase shift layer 13, form resist pattern 14P1(with reference to Fig. 1 (a) (H)).Resist pattern 14P1 is as the etching mask performance function of phase shift layer 13.Then, phase shift layer 13 is etched to the pattern form of regulation.Thus, on transparency carrier 10, form and be patterned into the phase shift layer 13P1(of regulation shape with reference to Fig. 1 (a) (I)).
After the composition of phase shift layer 13P1, remove resist pattern 14P1(with reference to Fig. 1 (a) (J)).Thus, the formation phase shift layer 13P1 of surrounding at light shield layer pattern 11P1, produces phase shifting mask 1.
Yet, according to the inventor's research, find, when utilizing the method to manufacture high-precision photomask, have problems.That is,, in the exposure (the 1st describing operation) of photoresist layer 12 and the exposure (the 2nd describing operation) of photoresist layer 14, may make hardly deviation of the alignment each other become zero.Therefore, cannot prevent from producing the photomask that has produced each other deviation of the alignment between light shield layer pattern and phase shift layer pattern.
In the situation that having produced above-mentioned deviation of the alignment, as shown in Fig. 1 (b), different by the size of the A shown in arrow and B.That is,, on online cross direction, the function of phase shift layer is asymmetric.Difference according to circumstances, a side that can be created in live width direction in this pattern manifests phase shift effect strongly, does not manifest the transfer printing picture (having seen through the light intensity distributions of the light of photomask) of phase shift effect at opposite side.Its result, if manufacture flat-panel monitor with having this transfer printing with the photomask of pattern, can lose the control of live width, cannot obtain the circuit pattern that precision is high.Even the photomask beyond phase shifting mask, can lose the control of live width too, cannot obtain the transfer printing pattern of expectation.
In the photomask of manufacturing at the photo-mask process through repeatedly, about the aligning of composition repeatedly, by aiming at reference to alignment mark etc., can make great efforts as best one can to get rid of deviation.But, need to carry out and to carry out repeatedly required repeatedly the describing of composition, and make deviation of the alignment that each time described become zero, be very difficult.The deviation of the alignment that therefore, cannot stop this degree of μ m～+ 0.5, generation-0.5 μ m completely.For example, in the situation that have the part of the pattern that live width is little (below 8 μ m) in transfer printing certain part with pattern, the caused live width deviation of this deviation of the alignment especially becomes problem, in the situation that live width is fine live width below 5 μ m is more serious.In addition, in the method for patent documentation 1, between the photo-mask process of twice (resist-coating, development, etching), there is film formation process, therefore also can produce the such problem of large-scale mask that mobile flat-panel monitor is used between production equipment of having to.
On the other hand, according to the method for recording in patent documentation 2, can control exactly the relative position of phase-shifter portion and light shielding part and form pattern.But, according to the method, in order to remove the delimitation pattern forming in order to delimit the formation presumptive area of phase-shifter portion, need to carry out photo-mask process for the third time.Therefore, in the method for patent documentation 2, need to describe for three times.Generally speaking, the increase meeting of describing operation brings very large impact to production efficiency, thereby for the photomask for the manufacture of large-area equipment as flat-panel monitor, and the additional productive decline of once describing due to operation cannot be ignored.
About thering is the photomask with pattern for the manufacture of the transfer printing of more advanced equipment, correspondingly complicated with the function such as importing, the polychrome of phase-shifter tunes into the melt, its structure is also had to complicated.For the photomask of this labyrinth, even if wish there is consumingly applying repeatedly photo-mask process, can not produce because deviation of the alignment each other makes the excellent manufacture method of the deteriorated problem of the precision of pattern for final transfer printing yet.
Summary of the invention
In view of above situation, the object of the invention is to address the above problem and a kind of manufacture method of the photomask of pattern for transfer printing that possesses is provided, it is in the photomask that need to repeatedly describe, the aligning in each region that transfer printing possesses with pattern can be carried out exactly, and the enforcement number of times of photo-mask process can be suppressed.And, another object of the present invention is to, the photomask of manufacturing by this manufacture method, the manufacture method of having used the pattern transfer-printing method of this photomask and having used the flat-panel monitor of this pattern transfer-printing method are provided.
It for an embodiment of the manufacture method of the photomask of the present invention that addresses the above problem, is the manufacture method of following photomask, this photomask possess by lower membrane pattern and upper layer film pattern stacked be arranged on transparency carrier and the transfer printing pattern obtaining, described lower membrane pattern and upper layer film pattern are respectively the exposure lower membrane that differs from one another of light transmission rate and upper layer film to be carried out to composition to form, the manufacture method of described photomask is characterised in that, possesses following operation: the operation of preparing photomask blank, this photomask blank is described lower membrane and the described upper layer film that the stacked material by having each other etching selectivity forms on described transparency carrier, and then formed the 1st resist film and obtained, by described the 1st resist film being carried out to the 1st operation of describing to form the 1st resist pattern, the tentative pattern that the 1st resist pattern is used to form described upper layer film pattern and delimit the region of described lower membrane pattern, using described the 1st resist pattern as mask, described upper layer film is carried out to etched the 1st etching work procedure, comprising the operation that forms the 2nd resist film on formed described upper layer film pattern and described tentative pattern whole, by described the 2nd resist film being carried out to the 2nd operation of describing to form the 2nd resist pattern, the 2nd resist pattern is used to form described lower membrane pattern, using described tentative pattern and described the 2nd resist pattern as mask, described lower membrane is carried out to etched the 2nd etching work procedure, and using described the 2nd resist pattern as mask, the 3rd etching work procedure of described tentative pattern is removed in etching.
Herein, the exposure light transmission rate of upper layer film and lower membrane can be got value arbitrarily, wherein also comprises that exposure light transmission rate is essentially 0% light shield layer.In the situation that two films are semi-transparency, the exposure light transmission rate of which film in the middle of upper layer film and lower membrane is Gao Junke more.The so-called material each other with etching selectivity refers to following situation: for example, in materials A and B, material B has patience for the etchant of etching material A, and on the contrary, materials A has patience for the etchant of etching material B.The etchant using in the present invention had both comprised the etching gas in dry ecthing, also comprised the etching solution in wet etching.
In addition, in the present embodiment, except upper layer film and lower membrane, in not affecting the scope of action effect of the present invention, also comprise the situation that is further formed with other films.
In the present embodiment, the tentative pattern forming is formed to lower membrane pattern as mask together with upper layer film pattern, therefore can utilize this tentative pattern to delimit the periphery of lower membrane pattern.Therefore,, between the upper layer film pattern and lower membrane pattern forming at the photo-mask process by different, can not produce the deteriorated of precision because of deviation of the alignment.And; because tentative pattern and lower membrane pattern have etching selectivity, therefore can, using the 2nd resist pattern as mask, protect formed upper layer film pattern; tentative pattern is removed in etching simultaneously, does not need for removing the further photo-mask process of tentative pattern.
Therefore, can provide the following manufacture method of the photomask of pattern for transfer printing that possesses: in the photomask that need to repeatedly describe, can carry out exactly the aligning in each region that transfer printing possesses with pattern, suppress the enforcement number of times of photo-mask process.
Other embodiments of the manufacture method of photomask of the present invention are manufacture methods of following photomask, this photomask possesses the transfer printing pattern that comprises light shielding part, semi light transmitting part and transmittance section, the manufacture method of described photomask is characterised in that, there is following operation: the operation of preparing photomask blank, this photomask blank is semi-transparent film and the photomask that the stacked material by having each other etching selectivity forms on transparency carrier, and then has formed the 1st resist film and obtain; By described the 1st resist film being carried out to the 1st operation of describing to form the 1st resist pattern, the 1st resist pattern is used to form described light shielding part and delimit the tentative pattern of described semi light transmitting part; Using described the 1st resist pattern as mask, described photomask is carried out to etched the 1st etching work procedure; Comprising the operation that forms the 2nd resist film on formed described light shielding part and described tentative pattern whole; By described the 2nd resist film being carried out to the 2nd operation of describing to form the 2nd resist pattern, the 2nd resist pattern is used to form described semi light transmitting part; Using described tentative pattern and described the 2nd resist pattern as mask, described semi-transparent film is carried out to etched the 2nd etching work procedure; And using described the 2nd resist pattern as mask, the 3rd etching work procedure of described tentative pattern is removed in etching.
In the present embodiment, in the manufacture method of photomask that possesses the transfer printing use pattern that comprises light shielding part, semi light transmitting part and transmittance section, also with above-mentioned embodiment similarly, can provide the following manufacture method of the photomask of pattern for transfer printing that possesses: in the photomask that need to repeatedly describe, can carry out exactly the aligning in each region that transfer printing possesses with pattern, suppress the enforcement number of times of photo-mask process.
In addition, in the present embodiment, also, with above-mentioned same, except photomask and semi-transparent film, also comprise the situation that is further formed with other films.
Other embodiments as the manufacture method of photomask of the present invention, be further characterized in that, in forming the operation of described the 2nd resist pattern, so that the mode that a part for described tentative pattern is exposed from the edge of described the 2nd resist pattern, carrying out the described the 2nd describes, in etching, remove in the operation of described tentative pattern, for the edge from described the 2nd resist pattern, exposed the described tentative pattern of a part of state, implement wet etching.
In the present embodiment, so that the mode that a part for tentative pattern is exposed from the edge of the 2nd resist pattern forms, thus, even if the 2nd aligning of describing is described position with respect to the 1st and has been produced deviation, can not allow this deviation bring impact to the formation of semi light transmitting part, can easily remove tentative pattern simultaneously yet.
Other embodiments as the manufacture method of photomask of the present invention, are further characterized in that, the width of described tentative pattern is below 2 μ m.
Owing to fixing tentatively the width of pattern, be below 2 μ m, therefore can absorb the deviation of the alignment between different photo-mask processs, and in the 3rd etching work procedure, can easily remove tentative pattern, therefore can realize efficient photomask manufacture.
Other embodiments as the manufacture method of photomask of the present invention, are further characterized in that, described transfer printing pattern is sectional hole patterns or dot pattern.Herein, sectional hole patterns refers to the pattern of light shielding part encirclement transmittance section as Fig. 2 (B), and dot pattern refers to the pattern of transmittance section encirclement light shielding part as Fig. 2 (A).In addition, in the situation that light shielding part surrounds transmittance section, the situation that comprises the situation of direct encirclement and indirectly surround as Fig. 2 (B).
As present embodiment, transfer printing pattern is in the situation of sectional hole patterns, dot pattern, can in the various manufactures field of representative, apply neatly in take that the contact hole of flat-panel monitor (FPD:flat panel display) forms, the manufacture of the sept of color filter (CF) etc.
Other embodiments as the manufacture method of photomask of the present invention, are further characterized in that, pattern Shi Xianyu gap pattern for described transfer printing.
As present embodiment, in the situation of transfer printing with pattern Shi Xianyu gap pattern, can in the various manufactures field that is fabricated to representative of the thin film transistor (TFT) with flat-panel monitor (FPD:Flat Panel Display) (TFT:Thin Film Transistor), apply neatly.
Other embodiments as the manufacture method of photomask of the present invention, be further characterized in that, at described the 2nd resist pattern, form in operation, so that mode described tentative pattern, that Ce edge, described transmittance section exposes with the width of 0.1 μ m～1.0 μ m is carried out the described the 2nd and described.
In the present embodiment, the Ce edge, transmittance section of tentative pattern exposes with the width of 0.1 μ m～1.0 μ m, therefore can fully absorb the deviation of the alignment between different photo-mask processs, and in the 3rd etching work procedure, can easily remove tentative pattern.
An embodiment of photomask of the present invention is following photomask, it possesses the light shielding part of comprising, the transfer printing pattern of semi light transmitting part and transmittance section, this photomask is characterised in that, described transfer printing has according to transmittance section with pattern, semi light transmitting part, light shielding part, semi light transmitting part, the part that the order of transmittance section is arranged along a direction, when being located at border between the above transmittance section of described orientation and described semi light transmitting part and the distance on the border between described semi light transmitting part and described light shielding part, be D1, when the distance on the border between the border between the above light shielding part of described orientation and described semi light transmitting part and described semi light transmitting part and described transmittance section is D2, the difference of D1 and D2 is below 0.1 μ m.
In the present embodiment, owing to can obtaining the transfer printing pattern of symmetry excellence, therefore, by using this photomask, can form the pattern that precision is high.
Other embodiments of photomask of the present invention are following photomasks, it possesses the light shielding part of comprising, the transfer printing pattern of semi light transmitting part and transmittance section, this photomask is characterised in that, described transfer printing has according to light shielding part with pattern, semi light transmitting part, transmittance section, semi light transmitting part, the part that the order of light shielding part is arranged along a direction, when being located at border between the above light shielding part of described orientation and described semi light transmitting part and the distance on the border between described semi light transmitting part and described transmittance section, be D3, when the distance on the border between the border between the above transmittance section of described orientation and described semi light transmitting part and described semi light transmitting part and described light shielding part is D4, the difference of D3 and D4 is below 0.1 μ m.
In the present embodiment, also same with above-mentioned embodiment, owing to can obtaining the transfer printing pattern of symmetry excellence, therefore, by using this photomask, can form the pattern that precision is high.
An embodiment of pattern transfer-printing method of the present invention is characterised in that to have following operation: use photomask or above-mentioned any one photomask of by above-mentioned any one manufacture method, being manufactured, by described transfer printing by pattern transfer to transfer printing body.
In the present embodiment, by using above-mentioned photomask, also can realize the pattern transfer-printing method that can form the pattern that precision is high.
An embodiment of the manufacture method of flat-panel monitor of the present invention is characterised in that, has used above-mentioned pattern transfer-printing method.
In the present embodiment, by applying above-mentioned pattern transfer-printing method, also can manufacture the flat-panel monitor with the pattern that precision is high.
According to the present invention, in the photomask that need to repeatedly describe, can form exactly the aligning in each region that transfer printing possesses with pattern, can suppress the enforcement number of times of photo-mask process.
Accompanying drawing explanation
(A) of Fig. 1 (a)～(J) is the schematic diagram that the manufacture method of photomask is in the past shown, and is (b) figure that has amplified the part of (J) in (a).
Fig. 2 is illustrated in the manufacture process of the photomask of describing operation of repeatedly (more than twice), the 1st time and the 2nd time describe operation in produce the schematic diagram of the form of deviation of the alignment, (A)～(D) be layout, (a)～(d) be the pattern of actual formation.
(A) of Fig. 3～(D) illustrates in order to judge distance D 1 that transfer printing is used with the deviation of the alignment in pattern and the schematic diagram of D2 and D3 and D4.
To be explanation produce the schematic diagram of the reason of deviation of the alignment in the manufacture process of the photomask that need to repeatedly describe operation in the past for (a) of Fig. 4～(c).
(d) of Fig. 5 is then Fig. 4 and the schematic diagram that produces the reason of deviation of the alignment in the manufacture process of the photomask that need to repeatedly describe operation is in the past described to (h).
(A) of Fig. 6～(C) is the schematic diagram of an embodiment that the manufacture method of photomask of the present invention is shown.
(D) of Fig. 7～(I) is then Fig. 6 and the schematic diagram of an embodiment of the manufacture method of photomask of the present invention is shown.
(a) of Fig. 8 and (b) be the schematic diagram that the example of the purposes that photomask of the present invention advantageously applied is shown.
Embodiment
As mentioned above, need repeatedly (more than twice) to describe in the photomask of operation in manufacture process, its consistance aligned with each other becomes very large problem.At each, describe to need to implement between operation other operation (developing, etching etc.), while being again arranged at drawing apparatus after these operations, with reference to alignment mark etc., position.In this case, can say hardly may be in full accord when describing for the first time.In addition, each coordinate position of describing in operation is also not quite identical sometimes.
Therefore, with reference to Fig. 2, for example illustrate and respectively the semi-transparent film and the photomask that are formed on transparency carrier are carried out composition and form the situation of pattern for transfer printing.In Fig. 2, (A) of upside～(D) wants the layout that obtains, now, may produce (a) of downside in reality～deviation of the alignment shown in (d).
Herein, (B) of (A) of Fig. 2, (a) and Fig. 2, (b) are the transfer printing patterns with dot pattern, sectional hole patterns, in Fig. 2 (A), (a), in direction, there is respectively the part of arranging along a direction according to the order of transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, transmittance section in length and breadth, in Fig. 2 (B), (b), in direction, there is respectively the part of arranging along a direction according to the order of light shielding part, semi light transmitting part, transmittance section, semi light transmitting part, light shielding part in length and breadth.In addition, (D) of (C) of Fig. 2, (c) and Fig. 2, (d) are the transfer printing patterns with Xian Yu gap (line and space) pattern, in Fig. 2 (C), (c), in the horizontal, there is the part of arranging along a direction according to the order of light shielding part, semi light transmitting part, transmittance section, semi light transmitting part, light shielding part, in Fig. 2 (D), (d), in the horizontal, there is the part of arranging along a direction according to the order of transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, transmittance section.(a) of downside～(d) represents that the actual transfer printing forming deviates from the formation position in the design shown in dotted line with pattern and situation about forming.
In addition, as thering is the photomask of this transfer printing with pattern, can enumerate so-called multi-gray scale photomas, phase shifting mask etc.
Multi-gray scale photomas generally possesses the transfer printing pattern that comprises transmittance section that the transmitance of the light that exposes is different, semi light transmitting part, light shielding part.On transfer printing body, form thus resist pattern stepped or skewed etc., that there is spatial structure.That is, utilized that photomask has, to expose light transmitance because of different this character in pattern Shang position for transfer printing, and utilized the resist film on transfer printing body to possess because of different residual this character of film value in position.Can also be made as the multi-gray scale photomas (multi-gray scale photomas more than 4 tones) that possesses a plurality of semi light transmitting part that transmitance differs from one another herein.As purposes, the manufacture that has in flat-panel monitor (FPD) thin film transistor (TFT) (TFT) using is manufactured with photomask with photomask or color filter (CF) etc.In the purposes for the manufacture of TFT, be applied in following favourable technique: can utilize to comprise multi-gray scale photomas and manufacture at interior 4 kinds or 3 kinds of photomasks the product of in the past manufacturing with 5 kinds of photomasks.And, in the matrix distribution of FPD, can also be effectively for the perforate of interlayer dielectric, form the photomask etc. of use.Certainly, also can in phase shifting mask, apply the present invention.
For example, in recent years, using liquid crystal, organic EL(electroluminescence) in the manufacture of the flat-panel monitor of element etc., require to form finer pattern and realize the raising of image quality and energy-conservation.Under many circumstances, the desired pattern width of advanced electronic equipment of such purposes is below 8 μ m.Further, also can use the pattern with the following live width of 5 μ m.In addition, use the transfer printing pattern that has the semi light transmitting part with so little live width between light shielding part and transmittance section, the demand that forms the works with taper side on transfer printing body is also very large.And the standard of the photomask requiring in the manufacture of this precision equipment is also more and more stricter.
Figure 3 illustrates distance D 1 and D2 in order to judge that the transfer printing shown in Fig. 2 is used with the deviation of the alignment in pattern.Specifically, in the transfer printing of Fig. 3 (A) corresponding with Fig. 2 (A), use in pattern, in direction in length and breadth (in Fig. 3 by the direction shown in Y, X) orientation separately, by D1, represent border between transmittance section and semi light transmitting part and the distance on the border between semi light transmitting part and light shielding part, by D2, represent border between light shielding part and semi light transmitting part and the distance on the border between semi light transmitting part and transmittance section.In the transfer printing of Fig. 3 (B) corresponding with Fig. 2 (B), use in pattern, in direction orientation separately in length and breadth, by D3, represent border between light shielding part and semi light transmitting part and the distance on the border between semi light transmitting part and transmittance section, by D4, represent border between transmittance section and semi light transmitting part and the distance on the border between semi light transmitting part and light shielding part.
In the transfer printing of Fig. 3 (C) corresponding with Fig. 2 (C), use in pattern, in horizontal orientation, by D3, represent border between light shielding part and semi light transmitting part and the distance on the border between semi light transmitting part and transmittance section, by D4, represent border between transmittance section and semi light transmitting part and the distance on the border between semi light transmitting part and light shielding part.In the transfer printing of Fig. 3 (D) corresponding with Fig. 2 (D), use in pattern, in horizontal orientation, by D1, represent border between transmittance section and semi light transmitting part and the distance on the border between semi light transmitting part and light shielding part, by D2, represent border between light shielding part and semi light transmitting part and the distance on the border between semi light transmitting part and transmittance section.
Now, in the situation that the difference of D1 and D2 or D3 and D4 has surpassed setting, in the symmetry in transfer printing with pattern, have problems, therefore, as multi-gray scale photomas, phase shifting mask in the situation that, be difficult to form the high circuit pattern of precision.Therefore, the difference of D1 and D2 or D3 and D4 is suppressed at setting with interior be very important.
The explanation of the manufacture method of<photomask in the past>
Below, Fig. 4 and Fig. 5 be explanation in the manufacture method of photomask in the past, produce the figure of the reason of deviation of the alignment.Show the situation of pattern for wish formation transfer printing as follows herein: stacked upper layer film pattern on lower membrane pattern, and the exposed portions serve of lower membrane pattern is surrounded upper layer film pattern and is formed, and transmittance section (part that transparency carrier exposes) configures its encirclement.Be noted that especially in the following description, take upper layer film as photomask, the situation that lower membrane is semi-transparent film is that example describes.
In addition, in Figure 4 and 5, at upside, show vertical view, at downside, show its sectional view.In addition, in the situation that resist film is positioned at the superiors, schematically depicts as and can have an X-rayed the photomask that is hidden in lower layer side.
First, as Fig. 4 (a)～(c) with as shown in Fig. 5 (d), implement photomask to carry out the 1st photo-mask process of composition.
First, prepare photomask blank, this photomask blank is on transparency carrier, to stack gradually semi-transparent film and photomask, and on it, has formed the 1st resist film (consisting of eurymeric resist) herein and obtain (with reference to Fig. 4 (a)).In addition, semi-transparent film used herein and photomask are the materials each other with etching selectivity.That is, semi-transparent film has patience for the etchant of etching photomask.
Then, the 1st resist film is carried out to the 1st and describe, and develop, form thus the 1st resist pattern (with reference to Fig. 4 (b)).Using the 1st resist pattern as etching mask, use photomask etchant, photomask is carried out to etching (with reference to Fig. 4 (c)).Afterwards, enter Fig. 5, remove resist pattern (with reference to Fig. 5 (d)).In this stage, complete the 1st photo-mask process, delimit the region of light shielding part.
Then,, as shown in Fig. 5 (e)～(h), implement the 2nd photo-mask process that double light-transmissive film carries out composition.
First, painting erosion resistant agent (the 2nd resist film) (with reference to Fig. 5 (e)) again on whole on the substrate that is formed with photomask pattern.Also use eurymeric resist herein.Then, implement the 2nd and describe, develop, form the 2nd resist pattern (with reference to Fig. 5 (f)).This resist pattern is that area is according to the rules by the design data of its covering and definite based on take the above-mentioned light shielding part having formed as central authorities.Yet, due to can not stop completely with the aiming at of the 1st resist pattern between produce deviation of the alignment, therefore with respect to the 2nd resist pattern, should be positioned at central light shielding part and not be configured in central authorities.There is shown the deviation of the alignment that in left side (directions X) produced 0.5 μ m, at upside (Y-direction), produced the situation of the deviation of the alignment of 0.5 μ m.
Then, using the 2nd resist pattern as etching mask, use semi-transparent film etchant, double light-transmissive film carries out etching (with reference to Fig. 5 (g)).Finally, remove the 2nd resist pattern (with reference to Fig. 5 (h)).
In the transfer printing obtaining like this, with in pattern, the semi light transmitting part that light shielding part should be disposed to its center is configured in to the position of upper left skew.This be because, as mentioned above, the 1st resist pattern and the 2nd resist pattern are by the different operations of describing, to form respectively, position deviation each other can not become zero completely.Therefore, should possess symmetric transfer printing and become asymmetric with pattern.
The explanation of the embodiment of the manufacture method of<photomask of the present invention>
Then, utilize Fig. 6 and Fig. 7, the manufacture method of photomask of the present invention embodiment is described.Herein, each operation of Fig. 6 (A)～(C) is corresponding with each operation of Fig. 4 (a)～(c) respectively, each operation of Fig. 7 (D)～(G) is corresponding with each operation of Fig. 5 (d)～(g) respectively, and the operation of Fig. 7 (I) is corresponding with the operation of Fig. 5 (h).In addition, the photomask etching work procedure of Fig. 7 (H) (tentative pattern removing step) is the distinctive operation of the present invention, in the semi-transparent film etching work procedure of Fig. 7 (G), uses tentative pattern, delimits the outer rim of semi light transmitting part.
In Fig. 6 and Fig. 7, be also to form light shielding part as upper layer film pattern, formation semi light transmitting part is that example describes as the situation of lower membrane pattern.In addition, in Fig. 6, Fig. 7, be also to show vertical view at upside, at downside, show its sectional view.And, in the situation that resist film is positioned at the superiors, schematically depicts as and can have an X-rayed the photomask being hidden in below.
First, as Fig. 6 (A)～(C) and as shown in Fig. 7 (D), implement photomask to carry out the 1st photo-mask process of composition.
In Fig. 6, first, prepare the photomask blank (with reference to Fig. 6 (A)) same with Fig. 4 (a).Herein, semi-transparent film and photomask have etching selectivity each other.That is, photomask has patience for the etchant of semi-transparent film, and semi-transparent film has patience for the etchant of photomask.In addition, about concrete material by aftermentioned.
Then, carry out the 1st and describe, and develop, form thus the 1st resist pattern.The 1st resist pattern is identical with above-mentioned Fig. 4 in the region this point of delimiting light shielding part.But in the present invention, in becoming the region of semi light transmitting part, the part that is used to form the tentative pattern consisting of photomask is also contained in the 1st resist pattern, described tentative pattern be for delimiting the outer rim (with reference to Fig. 6 (B)) of semi light transmitting part.
This tentative pattern is the part of etched removal in operation below.Be preferably, the wet etching of the effect excellence by isotropic etching removes this tentative pattern.Therefore, the width of tentative pattern is preferably in this removing step and does not need the too much time, and the width of the degree that can remove reliably.Particularly, be preferably the width below 2 μ m.
And this tentative pattern can absorb by twice describes the deviation of the alignment amount that operation causes.Therefore the size that, is preferably based on issuable deviation of the alignment decides this tentative pattern.Therefore, if the maximal value of deviation of the alignment (being determined by the function of describing machine) is ± 0.5 μ m that the width of tentative pattern is preferably 0.5 μ m～2 μ m, more preferably the width of 0.5 μ m～1.5 μ m, more preferably 0.5 μ m～1.0 μ m.
And the 1st resist pattern comprises the part that forms as mentioned above the part of light shielding part and form tentative pattern, therefore, while deciding the 1st to describe based on this, describe data.
As mentioned above, for example, by determine rightly the width (, 2 μ m are following) of tentative pattern according to the maximal value of deviation of the alignment, thus in removing the etching work procedure (the 3rd etching work procedure) of tentative pattern, do not need too much time, time, therefore can realize efficient photomask manufacture.
Then, the 1st resist pattern of take is etching mask, and photomask is carried out to etching (the 1st etching work procedure)., delimit the region of light shielding part herein, and, by tentative pattern, delimit the after this outer rim of the semi light transmitting part of composition (with reference to Fig. 6 (C)).
Then, enter Fig. 7, peel off the 1st resist pattern (with reference to Fig. 7 (D)).Thus, finish the 1st photo-mask process to photomask composition.
Then, painting erosion resistant agent film (with reference to Fig. 7 (E)) again on whole on substrate.Then, carry out the 2nd and describe and develop, form the 2nd resist pattern (with reference to Fig. 7 (F)).The 2nd resist pattern is to make the pattern that exposes as the part of transmittance section.
As mentioned above, in fact can not to form the position deviation with respect to the position of above-mentioned the 1st resist pattern be zero to the 2nd resist pattern.But, according to the present invention, even if produced this aligning change, in formed final transfer printing, with in pattern, also can make with the deviation of design load is zero.
; the 2nd resist pattern makes to expose as the region of transmittance section; and cover the region as semi light transmitting part; thereby in the part on the border as semi light transmitting part and transmittance section; in semi light transmitting part side; be made as the resist pattern of following size: this size reduction the permissible size (for example, 0.1 μ m～1.0 μ m, more preferably 0.2 μ m～0.8 μ m) of the regulation corresponding with the width of tentative pattern.That is, the edge of resist pattern is retreated to semi light transmitting part side (being left side in the section J-J of Fig. 7 (F)).Therefore, above-mentioned tentative pattern, Ce edge, transmittance section (or, at least transmittance section Ce side) expose (with reference to Fig. 7 (F)) a little from the edge of the 2nd resist pattern.Therefore, carrying out the 2nd while describing, using the data of describing of having considered this point.For example, by the design that makes the edge of resist pattern be positioned at the width central authorities of tentative pattern, form the 2nd resist pattern.
Like this, the Ce edge, transmittance section of tentative pattern with the width of regulation (for example, the width of 0.1 μ m～1.0 μ m) expose, thereby can absorb reliably the deviation of the alignment between different photo-mask processs, and in removing the etching work procedure (the 3rd etching work procedure) of tentative pattern, without too much time, time.
Because the Ce edge, transmittance section of this tentative pattern is the part of the correct outer rim as semi light transmitting part of delimiting in the 1st etching work procedure, therefore using this part as etching mask, together use with the 2nd resist pattern, and with the etchant of semi-transparent film, carry out the etching (the 2nd etching) (with reference to Fig. 7 (G)) of semi-transparent film.
Herein, tentative pattern is formed by photomask, even if therefore contact with the etchant of semi-transparent film, also can not disappear.
Then, remaining under the state of the 2nd resist pattern, using the etchant of photomask to remove tentative pattern (the 3rd etching work procedure).In addition, because established light shielding part is protected by the 2nd resist pattern, therefore when removing tentative pattern, can not damage., from the side of tentative pattern, carry out lateral erosion meeting more effective herein, therefore preferably carry out the wet etching of the effect excellence of isotropic etching, rather than carry out dry ecthing.Then, tentative pattern is disappeared.Now, because semi-transparent film has patience for the etchant of photomask, therefore can not disappear (with reference to Fig. 7 (H)).Then, finally peel off the 2nd resist pattern (with reference to Fig. 7 (I)).
As mentioned above, the photomask obtaining by the operation shown in Fig. 6 and Fig. 7 according to design like that, is configured in light shielding part at the center of semi light transmitting part.That is, can not produce mutual alignment as seen in Fig. 5 (h), light shielding part and semi light transmitting part the problem of displacement occurs in directions X, Y-direction, but become the position conforming to design.
Carrying out the 2nd while describing, even if produced and relative position deviation between the 1st describes, the part that also can become tentative pattern is at least exposed a part of state from the edge of the 2nd resist pattern.In other words, will tentative pattern be sized to, even in the situation that produced above-mentioned relative position deviation, the state that expose from the edge of the 2nd resist pattern the side that also can become tentative pattern.Therefore, can utilize tentative pattern to delimit reliably the outer rim of semi light transmitting part, therefore can realize the configuration conforming to design being formed by the 1st resist pattern.In addition, with the 2nd resist pattern, protect light shielding part, can utilize etching selectivity, in the situation that not affecting semi light transmitting part, tentative pattern (the 3rd etching work procedure) is removed in etching, does not therefore need for removing the further photo-mask process of tentative pattern.
As mentioned above, the present invention can provide the manufacture method of the photomask of pattern for transfer printing that possesses as follows: in the photomask that need to repeatedly describe, can carry out exactly the aligning in each region that transfer printing possesses with pattern and can suppress the enforcement number of times of photo-mask process.
In addition, the mode that a part for tentative pattern is exposed with the edge from the 2nd resist pattern forms, the tentative pattern exposing for a part, and the effect of the isotropic etching having by wet etching, can remove all tentative pattern.The enforcement number of times that therefore, can suppress reliably photo-mask process.
In each operation of above-mentioned Fig. 4～Fig. 5 and Fig. 6～Fig. 7, although used the part removed eurymeric resist of exposure, be not limited to this, the negative resist that also can use the part of exposure to be retained.
In addition, in Fig. 6 and Fig. 7, although show the formation operation of the dot pattern that is formed with transmittance section, semi light transmitting part, light shielding part from outside as shown in Fig. 3 (A), but be not limited to this, for example, also can similarly form the sectional hole patterns that is formed with light shielding part, semi light transmitting part, transmittance section from outside as shown in Fig. 3 (B).In this case, can form light shielding part in outside, side within it, forms tentative pattern and realizes to surround the mode of central transmittance section.
And the sectional hole patterns about the Xian Yu gap shown in Fig. 3 (C), (D), also can form by identical manufacture method.
<advantageously apply the explanation of mask of the present invention>
Purposes and the pattern form that can apply the photomask of manufacture method of the present invention have no particular limits.As transfer printing pattern, for having symmetric design, effect of the present invention is remarkable.For example, there is following situation: pattern ，Qi two ends, periphery for regulation configure the functional patterns such as phase-shifter.So-called symmetry, comprises that Rotational Symmetry, point symmetry or mirror image are symmetrical.
In addition, in comprising the pattern of fine width, alignment precision becomes large problem, and therefore for having, width 8 μ m are following, especially the transfer printing pattern of the part below 5 μ m is favourable.
In purposes, for example, in the electronic equipment of manufacturing at overlapping a plurality of layers, contribute to improve registration accuracy each other.For example,, for the TFT(thin film transistor (TFT) of flat-panel monitor (FPD) use) manufacturing purposes, color filter (CF), to manufacture purposes etc. be favourable.
In addition, the resist pattern different, that have three-dimensional shape in the situation that go for residual film value according to position forms while tilting in this three-dimensional shape, pitch angle (cone angle) can be controlled to expectation value, so the present invention is favourable.For example, can be used in the contact hole pattern at band pitch angle (taper), the sept of color filter (CF) etc.
Fig. 8 (a) schematically illustrates and uses the photomask of having applied manufacture method of the present invention, forms the situation of the works of the side with inclination on photoresist.For example, can be used in the formation etc. of the sept using in the color filter (CF) of liquid crystal indicator., can apply the mask pattern as shown in the figure of downside herein, and use negative resist, form the sept as shown in the figure of upside.Herein, and the transmittance section of mask pattern and the semi light transmitting part between light shielding part are accordingly, according to the resolution of exposure machine, form conical in shape.Thus, can be formed in the conical in shape at pitch angle that cannot realize, that there is expectation in the binary mask only being formed by light shielding part and transmittance section.
And the present invention also can advantageously be applied to Xian Yu gap pattern.But, the invention is not restricted to have symmetric pattern.For example, also can be advantageously used in the pattern that TFT manufactures use.For example, in the situation that use while applying the present invention to wish to manufacture TFT with 4 photomasks, multi-gray scale photomas (the 3 tone photomasks with light shielding part, semi light transmitting part, transmittance section), can make light shielding part (corresponding to source electrode, drain electrode) and the deviation of the alignment of semi light transmitting part (corresponding to raceway groove) become in fact zero, therefore extremely beneficial.That is,, by using the photomask of being manufactured by manufacture method of the present invention, can form accurately the channel part being even more important in TFT.
And, by using the photomask being obtained by manufacture method of the present invention, can be formed in the hole that cannot realize in the binary mask only being formed by light shielding part and transmittance section, there is the conical inboard wall at expectation pitch angle.In Fig. 8 (b), the mask pattern by shown in the figure of application downside, and is used eurymeric resist, can form the hole shown in the figure of upside.That is, illustrated hole possesses bottom, is inclined to the side wall portion of taper, the upper surface part being connected with rake, and these bottoms, side wall portion and upper surface part are formed on respectively the position corresponding with the transmittance section of mask pattern, semi-transparent film and photomask.Bottom in the bottom in illustrated example Zhong， hole is provided with Wiring pattern.In addition, the side wall portion in hole and upper surface are insulated film and cover, and the electrode that the surface of this dielectric film is formed by conductor covers.Stacked semi-transparent film and photomask can be passed through in this hole, and use the 1st resist pattern that forms the tentative pattern of delimiting light shielding part and delimitation semi light transmitting part on photomask to form.
In transfer printing, with in pattern, can advantageously be applied to have in the pattern of the part that semi light transmitting part is adjacent with transmittance section.In addition, also can advantageously be applied to not have in pattern part, that Fig. 3 is such that light shielding part is adjacent with transmittance section.
In the situation that applying the present invention to multi-gray scale photomas, in transfer printing, with comprising light shielding part, semi light transmitting part, transmittance section in pattern, can carry out composition respectively and form transfer printing pattern the photomask on transparency carrier, semi-transparent film.In addition, photomask is not to possess light-proofness completely in the present invention.Be preferably, stacked by with light-transmissive film, more than becoming optical concentration OD3.More preferably, only by photomask, make optical concentration OD become more than 3 (for example by exposure wavelength represent that wavelength is made as g line time, OD represents the value of wavelength for this).
In addition, as the semi-transparent film using in multi-gray scale photomas, preferably using exposure light transmission rate is 20～80%, more preferably 30～60%, and phase shift act as 90 ° of following, 60 ° of following semi-transparent films more preferably.By exposure light represent that wavelength is made as g line time, transmitance, phase-shift phase can be all for this, to represent the value of wavelength.
As the exposure optical wavelength of using, preferably use the broadband that comprises i line, h line, g line in transfer printing.
In the situation that applying the present invention to phase shifting mask, can be using semi-transparent film as phase shift film.This mask can be when exposure, to use the mask of single wavelength.In addition, this phase shift film can make 180 ° of exposure wavelength (or it represents wavelength) phase shifts (that is, (2n+1) π (n is integer)).About this semi-transparent film, the light transmission rate that for example exposes can be below 30%.In addition, as exposure light, in the situation that using single wavelength, preferably using this single wavelength as representing that wavelength decides transmitance and phase-shift phase.
The present invention can also be for the photomask of other purposes.For example, the present invention also can be applied to be provided with the photomask when adjusting the semi light transmitting part through the light intensity distributions of light between light shielding part and transmittance section.Or, in the photomask in the time of can being applied to possess semi-transparency in order to reduce the time of exposure irradiation amount, shortening scan exposure in a part for light shielding part.In this case, can use that exposure light transmission rate is 2～50%, phase shift act as 90 ° of following semi-transparent films.
Certainly, even other films, the photomask of describing for needs more than twice, also can obtain excellent action effect.In addition, even if the kind of film also can be applied for other kinds, so long as stacked the 1st film, the 2nd film, and formed by the material each other with etching selectivity.
The explanation of<further action effect of the present invention>
In the present invention, the registration accuracy of the pattern forming by a plurality of composition operations is high, therefore can improve and also use other photomasks to form the yield rate in the manufacturing process of electronic equipment of a plurality of layers.In addition, the present invention is not increasing and is describing in operation this point, and productivity is high.
The explanation of<photo mask material>
Herein, as the transparency carrier that forms photomask, use effects on surface has carried out the quartz glass substrate of grinding etc.Size has no particular limits, and can suitably select according to the substrate that uses this mask expose (such as flat-panel monitor with substrate etc.).For example can use rectangular substrate more than monolateral 300mm.
In the present invention, prepared to be formed with the photomask blank of semi-transparent film, photomask etc. on this transparency carrier.The material of photomask and semi-transparent film has patience for etchant (etching solution or etching gas) each other.Therefore in addition, as described later, photomask will carry out lateral erosion in photomask composition operation, is preferably suitable for carrying out the material of the significant wet etching of trend of isotropic etching.
The semi-transparent film that a part for exposure light when in addition, semi-transparent film preferably makes photomask of the present invention be equipped on exposure machine and expose sees through.
The material illustration of concrete semi-transparent film is as follows: except Cr compound (oxide of Cr, nitride, carbonide, oxynitride, carbon oxynitride etc.), Si compound (SiO 2, SOG), outside metal silicide (TaSi, MoSi, WSi or their nitride, oxynitride etc.), can also use the Ti compounds such as TiON.
Photomask material, except Cr or Cr compound (oxide of Cr, nitride, carbonide, oxynitride, carbon oxynitride etc.), can also be used Ta, Mo, W or their compound (comprising above-mentioned metal silicide) etc.
Therefore, when consider separately etching selectivity time, for example, the in the situation that of having used Si compound, metal silicide or Ti compound in semi-transparent film, photomask material is preferably the combination of Cr or Cr compound.
About photomask and semi-transparent film, preferably under stacked state, do not see through in fact exposure light (optical concentration OD is more than 3), but according to the purposes of photomask, can see through a part (for example transmitance≤20%) for exposure light yet.Be preferably, photomask is the photomask of realizing separately more than 3 optical concentrations.
In addition, so long as can apply the layer structure of manufacture method of the present invention, be just not precluded within on the basis of above-mentioned photomask, semi-transparent film, also form the situation of other films.
The photomask blank that is formed with semi-transparent film, photomask is further painting erosion resistant agent film and become the photomask blank with resist.Resist film can be both eurymeric, also can be minus (being illustrated with eurymeric in the above-described embodiment).
The etchant (etching solution or etching gas) using for each membrane material can be used known etchant.For the film that contains Cr, Cr compound (for example, as film Cr photomask, there is the antireflection layer being formed by Cr compound on surface), can be used as the etching solution that chromium is known with etchant, comprise ammonium ceric nitrate.In addition, also can apply that to have used chlorine be the dry ecthing of gas.
And, for the film of MoSi or its compound, can use the etching solution that is added with the oxygenants such as hydrogen peroxide, nitric acid, sulfuric acid in the fluorides such as hydrofluorite, hydrofluosilicic acid, ammonium bifluoride.Or, the etching gas that also can use fluorine to be.
In addition, in the situation that using these membrane materials to form tentative pattern, in the operation that tentative pattern etching is removed, preferably use wet etching.And, more preferably in all etching work procedures, all use wet etching.
The explanation of<photomask of the present invention>
The present invention includes the photomask of manufacturing by the manufacture method shown in Fig. 6 and Fig. 7.This photomask is especially possessing have symmetric pattern in the situation that and can advantageously manufacture.For example, can enumerate and possess Fig. 3 (A)～(D) photomask of illustrative arranged in patterns.In this case, can prevent that by the 1st, describing to produce each other deviation with the 2nd pattern of describing to form respectively loses symmetric drawback.
For example, as Fig. 3 (A) or (D), in transfer printing, with pattern, possess according to transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, in the situation of the part that the order of transmittance section is arranged along a direction, when being located at the border between transmittance section and semi light transmitting part and the distance on the border between semi light transmitting part and light shielding part in this orientation, be D1, when the distance on the border between the border in this orientation between light shielding part and semi light transmitting part and semi light transmitting part and transmittance section is D2, utilize above-mentioned tentative pattern, can realize and design the configuration conforming to, therefore can make the difference of D1 and D2 is below 0.1 μ m.
Similarly, as Fig. 3 (B) or (C), in transfer printing, with pattern, possess according to light shielding part, semi light transmitting part, transmittance section, semi light transmitting part, in the situation of the part that the order of light shielding part is arranged along a direction, when being located at the border between light shielding part and semi light transmitting part and the distance between the border between semi light transmitting part and transmittance section in this orientation, be D3, when the distance on the border between the border in this orientation between transmittance section and semi light transmitting part and semi light transmitting part and light shielding part is D4, utilize above-mentioned tentative pattern, can realize and design the configuration conforming to, therefore can make the difference of D3 and D4 is below 0.1 μ m.
As mentioned above, in photomask of the present invention, the transfer printing pattern of symmetry excellence can be obtained, therefore, by using this photomask, the circuit pattern that precision is high can be formed.
<used the explanation of the pattern transfer-printing method of photomask of the present invention>
The present invention also comprises the pattern transfer-printing method that has used the photomask being obtained by above-mentioned manufacture method.And, also comprise flat-panel monitor (FPD) manufacture method of using this pattern transfer-printing method.In this case, the exposure device using in pattern transfer can be used known device.The exposure device using while carrying out pattern transfer for use photomask of the present invention on transfer printing body, has no particular limits.But, be applicable to being applied to possess the light source that comprises i line, h line, g line, so-called liquid crystal display (LCD) uses exposure device.For example, in having used the photomask of the present invention of phase shift film pattern, can only use the central single wavelength (for example i line) of above-mentioned wavelength to expose.
In addition, the resist using on transfer printing body can be both eurymeric, can be also minus, can select according to purposes.
As mentioned above, the photomask of the application of the invention, can realize the pattern transfer-printing method that can form the circuit pattern that precision is high, by applying this pattern transfer-printing method, can manufacture the flat-panel monitor that possesses the circuit pattern that precision is high.
The explanation of<other embodiments of the present invention>
In the explanation of above-mentioned embodiment, although show the situation that forms semi-transparent film, photomask, even other film also can obtain identical action effect.Therefore, as mentioned above, above-mentioned semi-transparent film, photomask can be renamed as to lower membrane, upper layer film, this lower membrane, upper layer film can be got the light transmission rate that exposes arbitrarily.
And, the invention is not restricted to above-mentioned embodiment, also comprise other various embodiments.

Claims (13)

1. the manufacture method of a photomask, this photomask possess by lower membrane pattern and upper layer film pattern stacked be arranged on transparency carrier and the transfer printing pattern obtaining, described lower membrane pattern and upper layer film pattern are respectively the exposure lower membrane that differs from one another of light transmission rate and upper layer film to be carried out to composition to form, the manufacture method of described photomask is characterised in that to possess following operation:
The operation of preparing photomask blank, this photomask blank is described lower membrane and the described upper layer film that the stacked material by having each other etching selectivity forms on described transparency carrier, and then has formed the 1st resist film and obtain;
By described the 1st resist film being carried out to the 1st operation of describing to form the 1st resist pattern, the tentative pattern that the 1st resist pattern is used to form described upper layer film pattern and delimit the region of described lower membrane pattern;
Using described the 1st resist pattern as mask, described upper layer film is carried out to etched the 1st etching work procedure;
Comprising the operation that forms the 2nd resist film on formed described upper layer film pattern and described tentative pattern whole;
By described the 2nd resist film being carried out to the 2nd operation of describing to form the 2nd resist pattern, the 2nd resist pattern is used to form described lower membrane pattern;
Using described tentative pattern and described the 2nd resist pattern as mask, described lower membrane is carried out to etched the 2nd etching work procedure; And
Using described the 2nd resist pattern as mask, the 3rd etching work procedure of described tentative pattern is removed in etching.
2. a manufacture method for photomask, this photomask possesses the transfer printing pattern that comprises light shielding part, semi light transmitting part and transmittance section, and the manufacture method of described photomask is characterised in that to have following operation:
The operation of preparing photomask blank, this photomask blank is semi-transparent film and the photomask that the stacked material by having each other etching selectivity forms on transparency carrier, and then has formed the 1st resist film and obtain;
By described the 1st resist film being carried out to the 1st operation of describing to form the 1st resist pattern, the 1st resist pattern is used to form described light shielding part and delimit the tentative pattern of described semi light transmitting part;
Using described the 1st resist pattern as mask, described photomask is carried out to etched the 1st etching work procedure;
Comprising the operation that forms the 2nd resist film on formed described light shielding part and described tentative pattern whole;
By described the 2nd resist film being carried out to the 2nd operation of describing to form the 2nd resist pattern, the 2nd resist pattern is used to form described semi light transmitting part;
Using described tentative pattern and described the 2nd resist pattern as mask, described semi-transparent film is carried out to etched the 2nd etching work procedure; And
Using described the 2nd resist pattern as mask, the 3rd etching work procedure of described tentative pattern is removed in etching.
3. according to the manufacture method of the photomask described in claim 1 or 2, it is characterized in that,
In forming the operation of described the 2nd resist pattern, so that the mode that a part for described tentative pattern is exposed from the edge of described the 2nd resist pattern carries out the described the 2nd and describes,
In etching, remove in the operation of described tentative pattern, for the edge from described the 2nd resist pattern, exposed the described tentative pattern of a part of state, implement wet etching.
4. according to the manufacture method of the photomask described in claim 1 or 2, it is characterized in that,
The width of described tentative pattern is below 2 μ m.
5. according to the manufacture method of the photomask described in claim 1 or 2, it is characterized in that,
Described transfer printing pattern is sectional hole patterns or dot pattern.
6. according to the manufacture method of the photomask described in claim 1 or 2, it is characterized in that,
Pattern Shi Xianyu gap pattern for described transfer printing.
7. according to the manufacture method of the photomask described in claim 1 or 2, it is characterized in that,
In forming the operation of described the 2nd resist pattern, so that mode described tentative pattern, that Ce edge, described transmittance section exposes with the width of 0.1 μ m～1.0 μ m is carried out the described the 2nd and described.
8. a pattern transfer-printing method, is characterized in that, has following operation:
The photomask that use is obtained by manufacture method described in claim 1 or 2, by described transfer printing by pattern transfer to transfer printing body.
9. a manufacture method for flat-panel monitor, is characterized in that,
This manufacture method has been used pattern transfer-printing method claimed in claim 8.
10. a photomask, it possesses the transfer printing pattern that comprises light shielding part, semi light transmitting part and transmittance section, and this photomask is characterised in that,
Described transfer printing has the part of arranging along a direction according to the order of transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, transmittance section with pattern,
When being located at border between the above transmittance section of described orientation and described semi light transmitting part and the distance on the border between described semi light transmitting part and described light shielding part, be D1,
When the distance on the border between the border between the above light shielding part of described orientation and described semi light transmitting part and described semi light transmitting part and described transmittance section is D2,
The difference of D1 and D2 is below 0.1 μ m.
11. 1 kinds of photomasks, it possesses the transfer printing pattern that comprises light shielding part, semi light transmitting part and transmittance section, and this photomask is characterised in that,
Described transfer printing has the part of arranging along a direction according to the order of light shielding part, semi light transmitting part, transmittance section, semi light transmitting part, light shielding part with pattern,
When being located at border between the above light shielding part of described orientation and described semi light transmitting part and the distance on the border between described semi light transmitting part and described transmittance section, be D3,
When the distance on the border between the border between the above transmittance section of described orientation and described semi light transmitting part and described semi light transmitting part and described light shielding part is D4,
The difference of D3 and D4 is below 0.1 μ m.
12. 1 kinds of pattern transfer-printing methods, is characterized in that, have following operation:
Right to use requires the photomask described in 10 or 11, by described transfer printing by pattern transfer to transfer printing body.
The manufacture method of 13. 1 kinds of flat-panel monitors, is characterized in that,
This manufacture method has been used the pattern transfer-printing method described in claim 12.
CN201310238262.7A 2012-06-18 2013-06-17 Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method Active CN103513505B (en)

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