CN105223769B - Manufacturing method, the manufacturing method of transfer method and flat-panel monitor of photomask - Google Patents
Manufacturing method, the manufacturing method of transfer method and flat-panel monitor of photomask Download PDFInfo
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- CN105223769B CN105223769B CN201510645264.7A CN201510645264A CN105223769B CN 105223769 B CN105223769 B CN 105223769B CN 201510645264 A CN201510645264 A CN 201510645264A CN 105223769 B CN105223769 B CN 105223769B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 98
- 238000005530 etching Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 238000010023 transfer printing Methods 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 description 112
- 239000010410 layer Substances 0.000 description 65
- 238000002834 transmittance Methods 0.000 description 56
- 239000011651 chromium Substances 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000000875 corresponding Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 230000003287 optical Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000003628 erosive Effects 0.000 description 2
- 235000005035 ginseng Nutrition 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002365 multiple layer Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 101710012572 CBG24701 Proteins 0.000 description 1
- 210000003027 Ear, Inner Anatomy 0.000 description 1
- OHORFAFFMDIQRR-UHFFFAOYSA-P Hexafluorosilicic acid Chemical compound [H+].[H+].F[Si-2](F)(F)(F)(F)F OHORFAFFMDIQRR-UHFFFAOYSA-P 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- -1 carbon oxygen nitrogen Chemical compound 0.000 description 1
- LQCIDLXXSFUYSA-UHFFFAOYSA-N cerium(4+);tetranitrate Chemical compound [Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O LQCIDLXXSFUYSA-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 230000000149 penetrating Effects 0.000 description 1
- 229910052904 quartz Inorganic materials 0.000 description 1
- 230000000717 retained Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 210000000009 suboesophageal ganglion Anatomy 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Abstract
The present invention provides manufacturing method, the manufacturing method of transfer method and flat-panel monitor of photomask, and the alignment in each region is accurately carried out in the photomask for needing repeatedly to describe, is able to suppress the implementation number of photo-mask process.The manufacturing method is with the following process: preparing photomask blank, the photomask blank is the lower membrane and upper layer film that stacking on the transparent substrate exposes that light transmission rate is different from each other and is made of the material each other with etching selectivity, and then is formed obtained from the 1st resist film；The 1st is carried out to the 1st resist film to describe, and forms the 1st resist pattern for being used to form the tentative pattern in region of upper layer film figure and delimitation lower layer's film figure；The 1st etching work procedure that upper layer film is etched；The 2nd resist film is formed in whole face；The 2nd is carried out to the 2nd resist film to describe, and forms the 2nd resist pattern for being used to form lower layer's film figure；The 2nd etching work procedure that lower membrane is etched；Etching removes the 3rd etching work procedure of tentative pattern.
Description
The application be the applying date be on 06 17th, 2013, application No. is 201310238262.7, entitled " light is covered
The divisional application of the application for a patent for invention of the manufacturing method of mould and its manufacturing method, transfer method and flat-panel monitor ".
Technical field
It is covered the present invention relates to the manufacturing method for the photomask for having transfer pattern, by the light that the manufacturing method manufactures
The manufacturer of mould, the pattern transfer-printing method for having used the photomask and the flat-panel monitor for having used the pattern transfer-printing method
Method.
Background technique
In the photomask used in liquid crystal display device or large scale integrated circuit etc., when forming fine pattern, deposit
In the project for needing to exclude the alignment variation as caused by manufacturing process as far as possible and accurately being manufactured.
In following patent documents 1, following phase shifting mask is recorded, which is to carry out structure to photomask
Figure, and obtained from foring in a manner of covering photomask the phase shift layer relative to film thickness of the i line with 180 ° of phase difference,
Thus, it is possible to form fine and high-precision pattern.In addition, describing in following patent documents 2 and accurately delimiting screening
The manufacturing method of the optical element in each region in light portion, transmittance section and phase shift portion.
Patent document 1: Japanese Unexamined Patent Publication 2011-13283
Patent document 2: Japanese Unexamined Patent Publication 2011-128504
The manufacturing method for the phase shifting mask recorded in patent document 1 is patterned to the light shield layer on transparent substrate, with
The mode for covering the light shield layer, forms phase shift layer on the transparent substrate, is patterned to the phase shift layer.Herein, Fig. 1 shows base
In the manufacturing process of the method for patent document 1.
In Fig. 1, firstly, light shield layer 11 ((A) of (a) referring to Fig.1) is formed on the transparent substrate 10, then, in shading
Photoresist layer 12 ((B) of (a) referring to Fig.1) is formed on layer 11.Then, by being exposed to photoresist layer 12 and
Development forms resist pattern 12P1 ((C) of (a) referring to Fig.1) on light shield layer 11.Using resist pattern 12P1 as
Light shield layer 11 is etched to defined pattern form by the etching mask of light shield layer 11.Form composition on the transparent substrate 10 as a result,
For the light shield layer 11P1 ((D) of (a) referring to Fig.1) for providing shape.After eliminating resist pattern (referring to Fig.1 (a)
(E)) phase shift layer 13, is formed.Phase shift layer 13 is formed on the transparent substrate 10 (referring to Fig.1 (a) in a manner of covering light shield layer 11P1
(F)).
Then, photoresist layer 14 ((G) of (a) referring to Fig.1) is formed on phase shift layer 13.Then, by photic
Resist layer 14 is exposed and develops, to form resist pattern 14P1 on phase shift layer 13 (referring to Fig.1 (a)
(H)).Resist pattern 14P1 is functioned as the etching mask of phase shift layer 13.Then, phase shift layer 13 is etched to defined
Pattern form.Form the phase shift layer 13P1 ((I) of (a) referring to Fig.1) for being patterned into regulation shape on the transparent substrate 10 as a result,.
After the composition of phase shift layer 13P1, remove resist pattern 14P1 ((J) of (a) referring to Fig.1).As a result, in shading
Phase shift layer 13P1 is formed around layer pattern 11P1, produces phase shifting mask 1.
However, according to the present invention people's the study found that using this method manufacture high-precision photomask when there are problems.
That is, in the exposure (the i.e. the 1st describes process) of photoresist layer 12 and the exposure of photoresist layer 14 (the i.e. the 2nd describes process)
In, as a consequence it is hardly possible to the deviation of the alignment between making becomes zero.Therefore, it is impossible to prevent from producing in shading layer pattern and phase shift
The photomask of deviation of the alignment is produced between layer pattern each other.
In the case where producing above-mentioned deviation of the alignment, as shown in Fig. 1 (b), the size of the A as shown in arrow and B is different.
That is, the function of phase shift layer is asymmetric in online wide direction.Depending on the situation, online wide direction can be generated in the pattern
Side show phase shift effect strongly, (penetrated the light of the light of photomask in the transfer picture that the other side does not show phase shift effect
Intensity distribution).As a result, line can be lost if manufacturing flat-panel monitor using the photomask with this transfer pattern
Wide control is unable to get circuit pattern with high accuracy.Even the photomask other than phase shifting mask can similarly lose line width
Control, be unable to get desired transfer pattern.
In the photomask manufactured by multiple photo-mask process, about the alignment of multiple composition, by referring to alignment
Label etc. is aligned, and can make great efforts to exclude deviation as best one can.It is repeatedly retouched needed for carrying out multiple composition however, it is desirable to execute
It draws, and it is very difficult for so that the deviation of the alignment of each description is become zero.Therefore, it is impossible to prevent completely occur -0.5 μm~+0.5
The deviation of the alignment of μm this degree.With the small pattern (such as 8 μm or less) of line width in some part of transfer pattern
In the case where part, line width deviation caused by this deviation of the alignment is particularly problematic, is 5 μm of glass-coated microwires below in line width
It is more serious in the case where width.In addition, in the method for patent document 1, twice photo-mask process (resist coating, development,
Etching) between there are film formation process, therefore can also generate the large size for mobile flat-panel monitor of having between production equipment
Mask such problems.
On the other hand, according to the method recorded in patent document 2, the phase in phase-shifter portion with light shielding part can accurately be controlled
Pattern is formed to position.But it according to this method, is formed to remove to delimit the formation presumptive area in phase-shifter portion
Delimitation pattern, need to carry out third time photo-mask process.Therefore, it needs to describe three times in the method for patent document 2.It is general and
Speech, the increase for describing process can bring very big influence to production efficiency, thus for for manufacturing as flat-panel monitor
For the photomask of the equipment of large area, productive decline caused by additional primary description process can not be ignored.
About the photomask having for manufacturing the transfer pattern of more advanced equipment, importing, polychrome with phase-shifter
The complications of functions such as tune into the melt correspondingly, structure also has to complicate.For the photomask of this labyrinth, by force
Wish occur to generate using multiple photo-mask process due to mutual deviation of the alignment and using final transfer strongly
The excellent manufacturing method of the problem of precision deterioration of pattern.
Summary of the invention
In view of the foregoing, the purpose of the present invention is to solve the above problem and provides and a kind of has transfer pattern
The manufacturing method of photomask can accurately be transferred and be had with pattern in the photomask for needing repeatedly to describe
The alignment in each region, and it is able to suppress the implementation number of photo-mask process.Moreover, another object of the present invention is to provide logical
The photomask of manufacturing method manufacture is crossed, the pattern transfer-printing method of the photomask has been used and has used the pattern transfer-printing method
Flat-panel monitor manufacturing method.
One embodiment of the manufacturing method for the photomask of the invention to solve the above problems is that following light is covered
The manufacturing method of mould, which, which has, is arranged lower layer's film figure on the transparent substrate with the stacking of upper layer film pattern and is obtained
Transfer pattern, lower layer's film figure and upper layer film figure be lower membrane different from each other to exposure light transmission rate respectively and
Made of upper layer film is patterned, the manufacturing method of the photomask is characterized in that, has following process: preparing photo blanks
The process of body, the photomask blank are that the institute being made of the material each other with etching selectivity is laminated on the transparent substrate
Lower membrane and the upper layer film are stated, and then is formd obtained from the 1st resist film；By being carried out to the 1st resist film
1st describe and the process that forms the 1st resist pattern, the 1st resist pattern is used to form the upper layer film figure and delimitation
The tentative pattern in the region of lower layer's film figure；Using the 1st resist pattern as mask, the upper layer film is lost
The 1st etching work procedure carved；It is including forming the 2nd in the entire surface for being formed by the upper layer film figure and the tentative pattern to resist
Lose the process of agent film；The process of the 2nd resist pattern of formation and carrying out the 2nd description to the 2nd resist film, the 2nd
Resist pattern is used to form lower layer's film figure；It is right using the tentative pattern and the 2nd resist pattern as mask
The 2nd etching work procedure that the lower membrane is etched；And it using the 2nd resist pattern as mask, etches described in removal
3rd etching work procedure of tentative pattern.
Herein, upper layer film and the exposure light transmission rate of lower membrane can take arbitrary value, wherein also including that exposure light penetrates
Rate is essentially 0% light shield layer.In the case where two films are semi-transparency, which film of upper layer film and lower membrane in
Expose light transmission rate more Gao Junke.The so-called material with etching selectivity each other refers to following situation: for example in materials A and B
In, material B has patience for the etchant for etching materials A, on the contrary, materials A is for etching the etchant of material B with resistance to
Property.Etchant used in the present invention had both included the etching gas in dry ecthing, also included the etching solution in wet etching.
In addition, in the present embodiment, other than upper layer film and lower membrane, not influencing function and effect of the invention
In range, include the case where being formed further with other films.
In the present embodiment, lower membrane figure is formed as mask using with the tentative pattern that upper layer film figure is formed together
Case, therefore the periphery that lower layer's film figure can be delimited using the tentative pattern.Therefore, it is formed by different photo-mask process
Upper layer film figure and lower layer's film figure between, the deterioration of precision will not be generated because of deviation of the alignment.Moreover, because tentative pattern
There is etching selectivity with lower layer's film figure, therefore can be using the 2nd resist pattern as mask, protection is formed by upper layer film
Pattern, while the tentative pattern of removal is etched, do not need the further photo-mask process for removing tentative pattern.
Therefore, it is capable of providing the manufacturing method of the following photomask for having transfer pattern: need repeatedly to describe
In photomask, the alignment with each region that pattern has can be accurately transferred, inhibits the implementation number of photo-mask process.
The other embodiments of the manufacturing method of photomask of the invention are the manufacturing methods of following photomask, which covers
Standby mold includes light shielding part, semi light transmitting part and the transfer of transmittance section pattern, and the feature of the manufacturing method of the photomask exists
In with the following process: preparing the process of photomask blank, which be laminated on the transparent substrate by having each other
The semi-transparent film and photomask that the material of etching selectivity is constituted, and then form obtained from the 1st resist film；By to institute
The process that the 1st resist film carries out the 1st description and forms the 1st resist pattern is stated, the 1st resist pattern is used to form described
Light shielding part and the tentative pattern for delimiting the semi light transmitting part；Using the 1st resist pattern as mask, to the photomask into
1st etching work procedure of row etching；It is including forming the 2nd in the entire surface for being formed by the light shielding part and the tentative pattern to resist
Lose the process of agent film；The process of the 2nd resist pattern of formation and carrying out the 2nd description to the 2nd resist film, the 2nd
Resist pattern is used to form the semi light transmitting part；Using the tentative pattern and the 2nd resist pattern as mask, to institute
State the 2nd etching work procedure that semi-transparent film is etched；And it using the 2nd resist pattern as mask, etches described in removal
3rd etching work procedure of tentative pattern.
In the present embodiment, it covers having the light comprising light shielding part, semi light transmitting part and the transfer of transmittance section pattern
In the manufacturing method of mould, also in the same manner as above embodiment, it is capable of providing the following photomask for having transfer pattern
Manufacturing method: in the photomask for needing repeatedly to describe, pair with each region that pattern has can accurately be transferred
Standard inhibits the implementation number of photo-mask process.
In addition, also including into one other than photomask and semi-transparent film also as described above in the present embodiment
The case where step is formed with other films.
The other embodiments of manufacturing method as photomask of the invention, it is further characterized in that, forming the described 2nd
In the process of resist pattern, so that the side that a part of the tentative pattern is exposed from the edge of the 2nd resist pattern
Formula carries out the described 2nd and describes, in the process that etching removes the tentative pattern, for from the side of the 2nd resist pattern
Edge exposes the tentative pattern of the state of a part, implements wet etching.
In the present embodiment, the shape in such a way that a part for making tentative pattern is exposed from the edge of the 2nd resist pattern
At, though as a result, the 2nd describe alignment relative to the 1st description position produce deviation, the deviation will not be allowed to semi light transmitting part
Formation affect, while tentative pattern can be readily removable.
The other embodiments of manufacturing method as photomask of the invention, it is further characterized in that, the tentative pattern
Width be 2 μm or less.
Width due to fixing tentatively pattern is 2 μm hereinafter, the deviation of the alignment between different photo-mask process therefore can be absorbed,
And in the 3rd etching work procedure, it can be readily removable tentative pattern, therefore can be realized efficient photomask manufacture.
The other embodiments of manufacturing method as photomask of the invention, it is further characterized in that, transfer figure
Case is sectional hole patterns or dot pattern.Herein, sectional hole patterns refer to that the light shielding part as Fig. 2 (B) surrounds the pattern of transmittance section, dot pattern
Refer to that the transmittance section as Fig. 2 (A) surrounds the pattern of light shielding part.In addition, in the case where light shielding part surrounds transmittance section, including it is straight
The case where connecing encirclement and the case where surrounded indirectly as Fig. 2 (B).
It, can be with FPD in the case where transfer as in the present embodiment is sectional hole patterns, dot pattern with pattern
The contact hole of device (FPD:flat panel display) formed, the manufacture of spacer of colour filter (CF) etc. is the various of representative
It is neatly applied in manufacturing field.
The other embodiments of manufacturing method as photomask of the invention, it is further characterized in that, transfer figure
Case is line and space pattern.
It, can be with FPD in the case where transfer as in the present embodiment is line and space pattern with pattern
The thin film transistor (TFT) (TFT:Thin Film Transistor) of device (FPD:Flat Panel Display) is fabricated to representative
Various manufacturing fields in neatly applied.
The other embodiments of manufacturing method as photomask of the invention, it is further characterized in that, it is against corrosion the described 2nd
In agent pattern formation process, so that the tentative pattern, transmittance section side edge is revealed with 0.1 μm~1.0 μm of width
Mode out carries out the described 2nd and describes.
In the present embodiment, the edge for fixing tentatively the transmittance section side of pattern is exposed with 0.1 μm~1.0 μm of width, therefore
The deviation of the alignment between different photo-mask process can be fully absorbed, and in the 3rd etching work procedure, can be readily removable temporarily
Determine pattern.
One embodiment of photomask of the invention is following photomask, is had including light shielding part, semi light transmitting part
And the transfer pattern of transmittance section, the photomask are characterized in that, the transfer has with pattern according to transmittance section, semi-transparent
The part that portion, light shielding part, semi light transmitting part, the sequence of transmittance section are arranged along a direction, when being located at institute in the orientation
State the boundary between transmittance section and the semi light transmitting part is at a distance from the boundary between the semi light transmitting part and the light shielding part
D1, boundary and the semi light transmitting part and the light transmission in the orientation between the light shielding part and the semi light transmitting part
When the distance on the boundary between portion is D2, the difference of D1 and D2 are 0.1 μm or less.
In the present embodiment, it since the excellent transfer pattern of symmetry can be obtained, is covered by using the light
Mould is capable of forming pattern with high accuracy.
The other embodiments of photomask of the invention are following photomasks, are had including light shielding part, semi light transmitting part
And the transfer pattern of transmittance section, the photomask are characterized in that, the transfer has with pattern according to light shielding part, semi-transparent
The part that portion, transmittance section, semi light transmitting part, the sequence of light shielding part are arranged along a direction, when being located at institute in the orientation
State the boundary between light shielding part and the semi light transmitting part is at a distance from the boundary between the semi light transmitting part and the transmittance section
D3, boundary and the semi light transmitting part and the shading in the orientation between the transmittance section and the semi light transmitting part
When the distance on the boundary between portion is D4, the difference of D3 and D4 are 0.1 μm or less.
In the present embodiment, also with above embodiment similarly, since the excellent transfer figure of symmetry can be obtained
Case, therefore by using the photomask, it is capable of forming pattern with high accuracy.
One embodiment of pattern transfer-printing method of the invention is characterized in that with the following process: use is by above-mentioned
The photomask or any one of the above photomask of any one manufacturing method manufacture, the transfer is transferred to pattern and is turned
It prints on body.
In the present embodiment, by using above-mentioned photomask, it also can be realized the pattern that can form pattern with high accuracy
Transfer method.
One embodiment of the manufacturing method of flat-panel monitor of the invention is characterized in that, has used above-mentioned pattern
Transfer method.
In the present embodiment, it by applying above-mentioned pattern transfer-printing method, can also manufacture with pattern with high accuracy
Flat-panel monitor.
According to the present invention, in the photomask for needing repeatedly to describe, it can accurately form what transfer pattern had
The alignment in each region is able to suppress the implementation number of photo-mask process.
Detailed description of the invention
(A) of (a) of Fig. 1~(J) is the schematic diagram for showing the manufacturing method of previous photomask, is (b) to be exaggerated (a)
In (J) a part figure.
Fig. 2 be show need repeatedly (more than twice) descriptions process photomask manufacturing process in, the 1st time with
The schematic diagram of the form of deviation of the alignment is generated in 2nd description process, (A)~(D) is layout, and (a)~(d) is practical
The pattern of formation.
(A) of Fig. 3~(D) be show the distance D1 and D2 that is used to determine the deviation of the alignment in transfer pattern with
And the schematic diagram of D3 and D4.
(a) of Fig. 4~(c) is to illustrate the generation pair in the manufacturing process that previous needs repeatedly describe the photomask of process
The schematic diagram of the reason of quasi- deviation.
(d) to (h) of Fig. 5 be then Fig. 4 and illustrate repeatedly to describe the manufacture of the photomask of process in previous needs
The schematic diagram for the reason of deviation of the alignment is generated in journey.
(A) of Fig. 6~(C) is the schematic diagram for showing an embodiment of manufacturing method for photomask of the invention.
(D) of Fig. 7~(I) be then Fig. 6 and an embodiment of the manufacturing method of photomask of the invention is shown
Schematic diagram.
(a) and (b) of Fig. 8 is the schematic diagram for showing the example for the purposes that photomask of the invention is advantageously applied.
Specific embodiment
As described above, need repeatedly to describe (more than twice) in the fabrication process in the photomask of process, it is aligned with each other
Consistency become very big problem.Need to implement other processes (development, etching etc.) between each description process, at this
When being again arranged on drawing apparatus after a little processes, positioned referring to alignment mark etc..In such a case it is possible to say hardly
It is completely the same when may be with first describe.In addition, sometimes each coordinate position described in process is also not quite identical.
Therefore, illustrate for example to carry out structure to the semi-transparent film and photomask that are formed on the transparent substrate respectively referring to Fig. 2
The case where scheming and forming transfer pattern.In Fig. 2, the layout that (A)~(D) of upside is intended to, at this point, real
In there may be deviation of the alignment shown in (a) of downside~(d).
Herein, (B), (b) of (A) of Fig. 2, (a) and Fig. 2 are the transfer patterns with dot pattern, sectional hole patterns, in Fig. 2
(A), in (a), be respectively provided on direction in length and breadth according to transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, transmittance section
The part that sequence is arranged along a direction is respectively provided on direction in length and breadth in (B), (b) of Fig. 2 according to light shielding part, half
The part that transmittance section, transmittance section, semi light transmitting part, the sequence of light shielding part are arranged along a direction.In addition, (C) of Fig. 2, (c) and
(D), (d) of Fig. 2 is the transfer pattern with line Yu gap (line and space) pattern, in (C), (c) of Fig. 2,
Horizontally, have and arranged according to light shielding part, semi light transmitting part, transmittance section, semi light transmitting part, the sequence of light shielding part along a direction
Part, in (D), (d) of Fig. 2, horizontally, have according to transmittance section, semi light transmitting part, light shielding part, semi light transmitting part, light transmission
The part that the sequence in portion is arranged along a direction.(a) of downside~(d) indicates that the transfer being actually formed deviates from void with pattern
Forming position in design shown in line and the case where formed.
In addition, so-called multi-gray scale photomas, phase shifting mask can be enumerated as the photomask with this transfer pattern
Deng.
Multi-gray scale photomas typically be provided with including expose light the different transmittance section of transmitance, semi light transmitting part, light shielding part
Pattern is used in transfer.Thus resist pattern ladder-like or skewed etc., with stereochemical structure is formed on transfer printing body.
That is, be utilized possessed by photomask, the transmitance of exposure light this different property due to the position on transfer pattern, and
The resist film being utilized on transfer printing body has different because of position this property of residual film value.Herein, it can also be set as having
The multi-gray scale photomas (multi-gray scale photomas more than 4 tones) of standby transmitance multiple semi light transmitting parts different from each other.As with
On the way, there are the manufacture photomask of thin film transistor (TFT) (TFT) used in flat-panel monitor (FPD) or colour filter (CF) system
It makes with photomask etc..For manufacture TFT use on the way, applied in following advantageous technique: can utilize comprising polychrome
4 kinds including tone photo masks or 3 kinds of photomasks manufacture the product manufactured in the past with 5 kinds of photomasks.Moreover, in the square of FPD
In battle array wiring, the photomask etc. of the aperture formation of interlayer dielectric can also be efficiently used for.It is of course also possible to be covered in phase shift
Using the present invention in mould.
For example, in recent years, in the manufacture of flat-panel monitor for having used liquid crystal, organic EL (electroluminescent) element etc.,
It is required that forming finer pattern to realize the raising and energy conservation of image quality.The advanced electricity of such purposes in many cases,
Pattern width required by sub- device product is at 8 μm or less.Further, it also will use the pattern with 5 μm or less line widths.Separately
Outside, using the transfer pattern that there is the semi light transmitting part with line width small in this way between light shielding part and transmittance section, turned
It prints and forms the demand with the works of taper side on body also very greatly.Also, it is required in the manufacture of this precision equipment
The standard of photomask is also increasingly stringenter.
Be shown in FIG. 3 the distance D1 that is used to judge the deviation of the alignment in transfer pattern shown in Fig. 2 and
D2.In particular, in the transfer pattern of Fig. 3 (A) corresponding with Fig. 2 (A), in direction in length and breadth (in Fig. 3 as shown in Y, X
Direction) in respective orientation, the boundary and semi light transmitting part and light shielding part between transmittance section and semi light transmitting part are indicated by D1
Between boundary distance, the side between the boundary and semi light transmitting part and transmittance section between light shielding part and semi light transmitting part is indicated by D2
The distance on boundary.In the transfer pattern of Fig. 3 (B) corresponding with Fig. 2 (B), in the respective orientation in direction in length and breadth, by D3
Indicate that the boundary between light shielding part and semi light transmitting part at a distance from the boundary between semi light transmitting part and transmittance section, indicates light transmission by D4
Boundary between portion and semi light transmitting part is at a distance from the boundary between semi light transmitting part and light shielding part.
In the transfer pattern of Fig. 3 (C) corresponding with Fig. 2 (C), in lateral orientation, shading is indicated by D3
Boundary between portion and semi light transmitting part is at a distance from the boundary between semi light transmitting part and transmittance section, indicates transmittance section and semi-transparent by D4
Boundary between light portion is at a distance from the boundary between semi light transmitting part and light shielding part.In the transfer of Fig. 3 (D) corresponding with Fig. 2 (D)
With in pattern, in lateral orientation, the boundary and semi light transmitting part and screening between transmittance section and semi light transmitting part are indicated by D1
The distance on the boundary between light portion is indicated by D2 between the boundary and semi light transmitting part and transmittance section between light shielding part and semi light transmitting part
Boundary distance.
At this point, in the case where the difference of D1 and D2 or D3 and D4 has been more than specified value, in the symmetry of transfer pattern
It is upper to lead to the problem of, therefore in the case where being used as multi-gray scale photomas, phase shifting mask, it is hardly formed circuit pattern with high accuracy.
Therefore, the difference of D1 and D2 or D3 and D4 is inhibited to be very important within specified value.
<explanation of the manufacturing method of previous photomask>
In the following, Fig. 4 and Fig. 5 are illustrated in the manufacturing method of previous photomask, the figure for the reason of generating deviation of the alignment.
Herein show be intended to be formed transfer pattern as follows: in the stacked on tunic pattern in lower layer's film figure upper layer, and
The exposed portion of lower layer's film figure surrounds upper layer film figure and is formed, and transmittance section (part that transparent substrate exposes) Jiang Qibao
It encloses and configures.Especially it is noted that in the following description, using upper layer film as photomask, the case where lower membrane is semi-transparent film
For be illustrated.
In addition, in figures 4 and 5, showing top view in upside, its sectional view is shown in downside.In addition, in resist
In the case that film is located at top layer, it is schematically depicted as that the photomask for being hidden in lower layer side can be had an X-rayed.
Firstly, implementing the 1st photo-mask process being patterned to photomask as shown in Fig. 4 (a)~(c) and Fig. 5 (d).
Firstly, preparing photomask blank, which is to stack gradually semi-transparent film and shading on the transparent substrate
Film, and formd the 1st resist film (being made of positive-workingresist) herein obtained from above (referring to Fig. 4 (a)).Separately
Outside, semi-transparent film used herein and photomask are materials each other with etching selectivity.That is, semi-transparent film hides etching
The etchant of light film has patience.
Then, the 1st being carried out to the 1st resist film to describe, and being developed, the 1st resist pattern is consequently formed (referring to figure
4(b)).Using the 1st resist pattern as etching mask, using photomask etchant, (reference is etched to photomask
Fig. 4 (c)).Later, into Fig. 5, remove resist pattern (referring to Fig. 5 (d)).At this stage, the 1st photo-mask process is completed, delimited
The region of light shielding part.
Then, as shown in Fig. 5 (e)~(h), implement the 2nd photo-mask process that double of light-transmissive film is patterned.
Firstly, being coated with resist (the 2nd resist film) again in the entire surface on the substrate for being formed with shading film figure
(referring to Fig. 5 (e)).Positive-workingresist is also used herein.Then, implement the 2nd describe, develop, form the 2nd resist pattern (ginseng
According to Fig. 5 (f)).The resist pattern be based on the above-mentioned light shielding part formed for center, covered according to the area of regulation
The design data of lid and determination.However, being aligned partially due to that cannot prevent completely generate between the alignment of the 1st resist pattern
Difference, therefore relative to the 2nd resist pattern, answer centrally located light shielding part to be not configured in center.It is shown in figure in left side (X
Direction) deviation of the alignment that produces 0.5 μm, the case where (Y-direction) produces 0.5 μm of deviation of the alignment in upside.
Then, using the 2nd resist pattern as etching mask, using semi-transparent film etchant, double of light-transmissive film into
Row etching (referring to Fig. 5 (g)).Finally, the 2nd resist pattern of removal (referring to Fig. 5 (h)).
In the transfer pattern being achieved in that, the semi light transmitting part that light shielding part should be configured to its center is configured in the left
The position of upper direction offset.This is because as described above, the 1st resist pattern and the 2nd resist pattern are to pass through difference respectively
Description process and formed, mutual position deviation cannot go completely into zero.Therefore, should have the transfer figure of symmetry
Case becomes asymmetric.
<explanation of the embodiment of the manufacturing method of photomask of the invention>
Then, using Fig. 6 and Fig. 7, an embodiment of the manufacturing method of photomask of the invention is illustrated.This
Place, each process of Fig. 6 (A)~(C) is corresponding with each process of Fig. 4 (a)~(c) respectively, each process of Fig. 7 (D)~(G)
Corresponding with each process of Fig. 5 (d)~(g) respectively, the process of Fig. 7 (I) is corresponding with the process of Fig. 5 (h).In addition, Fig. 7 (H)
Photomask etching work procedure (tentative pattern removing step) is the distinctive process of the present invention, in the semi-transparent film etching work procedure of Fig. 7 (G)
In, using tentative pattern, to delimit the outer rim of semi light transmitting part.
In figure 6 and figure 7, and to form light shielding part as upper layer film figure, semi light transmitting part is formed as lower membrane figure
It is illustrated in case where case.In addition, showing top view in Fig. 6, Fig. 7, and in upside, it is shown in downside and is cutd open
Face figure.Moreover, in the case where resist film is located at top layer, it is schematically depicted as see-through to being hidden in following shading
Film.
Firstly, implementing the 1st photo-mask process being patterned to photomask as shown in Fig. 6 (A)~(C) and Fig. 7 (D).
In Fig. 6, firstly, preparing the same photomask blank with Fig. 4 (a) (referring to Fig. 6 (A)).Herein, semi-transparent film with
Photomask has etching selectivity each other.That is, photomask has patience for the etchant of semi-transparent film, semi-transparent film is for hiding
The etchant of light film has patience.In addition, will be aftermentioned about specific material.
Then, it carries out the 1st to describe, and develops, the 1st resist pattern is consequently formed.1st resist pattern is being drawn
On this point of determining the region of light shielding part is identical as above-mentioned Fig. 4.But in the present invention, it in the region for becoming semi light transmitting part, uses
It is also contained in the 1st resist pattern in the part for forming the tentative pattern being made of photomask, the tentative pattern is for drawing
Determine the outer rim of semi light transmitting part (referring to Fig. 6 (B)).
The tentative pattern is the part for being etched removal in a subsequent process step.Preferably, pass through isotropic etching
Excellent wet etching is acted on to remove the tentative pattern.Therefore, the width for fixing tentatively pattern is preferably not required in the removing step
Want excessive time, and the width for the degree that can reliably remove.And specifically, it is preferable to be 2 μm of width below.
Moreover, the tentative pattern can be absorbed as describing deviation of the alignment amount caused by process twice.It is therefore preferable that based on can
The size for the deviation of the alignment that can be generated determines the tentative pattern.Therefore, if the maximum value of deviation of the alignment is (by the function of description machine
Can determine) it is ± 0.5 μm, then the width for fixing tentatively pattern is preferably 0.5 μm~2 μm, more preferably 0.5 μm~1.5 μm of width,
Further preferably 0.5 μm~1.0 μm.
Also, the 1st resist pattern includes the part for forming the part of light shielding part as described above and forming tentative pattern, because
This, describing the data when the 1st description is determined based on this.
As described above, by properly determined according to the maximum value of deviation of the alignment tentative pattern width (for example, 2 μm with
Under), thus in the etching work procedure (the 3rd etching work procedure) for removing tentative pattern, do not need excessive time, effort, therefore energy
Enough realize efficient photomask manufacture.
Then, using the 1st resist pattern as etching mask, (the 1st etching work procedure) is etched to photomask.Herein, it draws
The region of light shielding part is determined, moreover, delimiting the outer rim of the hereafter semi light transmitting part of composition by fixing tentatively pattern (referring to Fig. 6 (C)).
Then, into Fig. 7, remove the 1st resist pattern (referring to Fig. 7 (D)).Terminate the 1st to photomask composition as a result,
Photo-mask process.
Then, resist film is coated in the entire surface on substrate again (referring to Fig. 7 (E)).Then, the 2nd is carried out to describe
And development, form the 2nd resist pattern (referring to Fig. 7 (F)).2nd resist pattern is so that the part as transmittance section is revealed
Pattern out.
As described above, it is practically impossible to be formed as the position relative to above-mentioned 1st resist pattern for the 2nd resist pattern
The position deviation set is zero.But, according to the present invention, it even if producing alignment variation, is used being formed by final transfer
In pattern, it is also possible that and the deviation of design value is zero.
That is, the 2nd resist pattern exposes the region as transmittance section, and the region as semi light transmitting part is covered,
Thus as in the part on semi light transmitting part and the boundary of transmittance section, in semi light transmitting part side, it is set as the resist figure of the following size
Case: the size reduce it is corresponding with the width of tentative pattern as defined in permissible size (for example, 0.1 μm~1.0 μm, more preferably
It is 0.2 μm~0.8 μm).That is, making the edge of resist pattern to semi light transmitting part side (being left side in the section J-J of Fig. 7 (F))
It retreats.Therefore, above-mentioned tentative pattern, transmittance section side edge (alternatively, side of at least transmittance section side) is from the 2nd resist figure
Slightly expose (referring to Fig. 7 (F)) at the edge of case.Therefore, when carrying out the 2nd and describing, using considering describing the data for this point.
For example, forming the 2nd resist pattern by making the edge of resist pattern positioned at the design of the width midway of tentative pattern.
In this way, the edge of the transmittance section side of tentative pattern is with defined width (for example, 0.1 μm~1.0 μm width) dew
Out, so as to reliably absorb the deviation of the alignment between different photo-mask process, and in the etching work for removing tentative pattern
In sequence (the 3rd etching work procedure), without excessive time, effort.
Due to the edge of the transmittance section side for fixing tentatively pattern be delimited in the 1st etching work procedure as semi light transmitting part just
The part of true outer rim, therefore using the part as etching mask, it is used together with the 2nd resist pattern, and using semi-transparent
The etchant of film carries out the etching (the 2nd etching) of semi-transparent film (referring to Fig. 7 (G)).
Herein, it fixes tentatively pattern to be formed by photomask, therefore even if being contacted with the etchant of semi-transparent film, will not disappear.
Then, in the state of remaining 2 resist pattern, tentative pattern the (the 3rd is removed using the etchant of photomask
Etching work procedure).In addition, since established light shielding part is protected by the 2nd resist pattern, when removing tentative pattern
It will not damage.Herein, carrying out lateral erosion from the side of tentative pattern can be more efficient, therefore preferably carries out isotropic etching
The excellent wet etching of effect, rather than carry out dry ecthing.Then, make tentative pattern loss.At this point, due to semi-transparent film for
The etchant of photomask has patience, therefore will not disappear (referring to Fig. 7 (H)).Then, it is finally peeled away the 2nd resist pattern (ginseng
According to Fig. 7 (I)).
As described above, the photomask obtained by Fig. 6 and process shown in Fig. 7 is such according to design, light shielding part is configured
At the center of semi light transmitting part.That is, the mutual alignment of as seen in Fig. 5 (h), light shielding part and semi light transmitting part will not be generated
The problem of being displaced in X-direction, Y-direction, but become the position being consistent with design.
When carrying out the 2nd description, even if producing the opposite position deviation between the 1st description, can also become tentative
A part of pattern at least exposes the state of a part from the edge of the 2nd resist pattern.In other words, by the size of tentative pattern
It is selected as, even if the side that can also become tentative pattern is against corrosion from the 2nd in the case where producing above-mentioned opposite position deviation
The state that the edge of agent pattern exposes.Therefore, the outer rim of semi light transmitting part can be reliably delimited using tentative pattern, therefore can
Realize the configuration being consistent with design formed by the 1st resist pattern.In addition, light shielding part is protected with the 2nd resist pattern, energy
Etching selectivity is enough utilized, in the case where not influencing semi light transmitting part, etching removes tentative pattern (the 3rd etching work procedure), therefore
The further photo-mask process for removing tentative pattern is not needed.
As described above, the present invention is capable of providing the manufacturing method of the photomask for having transfer pattern as follows:
In the photomask for needing repeatedly to describe, the alignment with each region that pattern has can be accurately transferred and can
Inhibit the implementation number of photo-mask process.
In addition, a part of tentative pattern is formed in a manner of exposing from the edge of the 2nd resist pattern, for a part
The tentative pattern exposed can remove all tentative patterns by the effect of isotropic etching possessed by wet etching.Cause
This, can be reliably suppressed the implementation number of photo-mask process.
In each process of above-mentioned Fig. 4~Fig. 5 and Fig. 6~Fig. 7, although the part of exposure has been used to be removed just
Type resist, but not limited to this, the retained negative resist in the part of exposure also can be used.
In addition, in figure 6 and figure 7, though it is shown that transmittance section, semi-transparent is formed with from outside as shown in Fig. 3 (A)
Portion, light shielding part dot pattern formation process, but not limited to this, for example, it is also possible to be identically formed as shown in Fig. 3 (B) from
It rises and is formed with light shielding part, semi light transmitting part, the sectional hole patterns of transmittance section in outside.In such a case it is possible to light shielding part is formed on the outside,
Its inside forms tentative pattern in a manner of surrounding the transmittance section in center to realize.
Moreover, the sectional hole patterns of line and gap shown in Fig. 3 (C), (D), can also by identical manufacturing method come
It is formed.
<advantageously applying the explanation of mask of the invention>
It can be not particularly limited using the purposes and pattern form of the photomask of the manufacturing method of the present invention.As transfer
With pattern, for the design with symmetry, significant effect of the invention.For example, there are following situations: being directed to defined figure
Case, in functional patterns such as its both ends, periphery configuration phase-shifters.So-called symmetry, including rotational symmetry, point symmetry or mirror
As symmetrical.
In addition, in the pattern comprising fine width, alignment precision becomes big problem, thus for 8 μm of width with
Under, the transfers of especially 5 μm parts below is advantageous with pattern.
With on the way, for example, it is smart to help to improve mutual coincidences being overlapped multiple layers in the electronic equipment that manufactures
Degree.For example, manufacturing purposes, colour filter (CF) manufacture purposes etc. for the TFT (thin film transistor (TFT)) of flat-panel monitor (FPD) is
It is advantageous.
In addition, the case where going for residual film value different according to position, resist pattern that there is three-dimensional shape
Under, when forming inclination in the three-dimensional shape, inclination angle (cone angle) can be controlled into desired value, therefore the present invention is advantageous
's.For example, can be used in the contact hole pattern with inclination angle (taper), spacer of colour filter (CF) etc..
Fig. 8 (a) is schematically illustrated using the photomask for applying the manufacturing method of the present invention, is formed on photoresist
There is the case where works of inclined side.For example, between can be used in used in the colour filter (CF) of liquid crystal display device
The formation etc. of parting.Herein, the mask pattern as shown in the figure of downside can be applied, and uses negative resist, to be formed such as
Spacer shown in the figure of upside.Herein, the semi light transmitting part between the transmittance section of mask pattern and light shielding part accordingly, according to
The resolution ratio of exposure machine and form conical by its shape.Thereby, it is possible to be formed in the binary mask being only made of light shielding part and transmittance section
In cannot achieve, conical by its shape with desired inclination angle.
Moreover, the present invention can also be advantageously applied for line and space pattern.But the present invention is not limited to symmetry
Pattern.For example, it is also possible to be advantageously used in the pattern of TFT manufacture.For example, applying the present invention to wish to be covered with 4 light
Mould come used when manufacturing TFT, multi-gray scale photomas (with light shielding part, semi light transmitting part, transmittance section 3 tone photomasks) feelings
Under condition, enable to the deviation of the alignment of light shielding part (correspond to source electrode, drain electrode) and semi light transmitting part (corresponding to channel) substantially at
It is zero, therefore extremely beneficial.That is, can accurately be formed by using the photomask manufactured by the manufacturing method of the present invention
The channel portion being even more important in TFT.
Moreover, by using the photomask obtained by the manufacturing method of the present invention, can be formed in only by light shielding part and thoroughly
The hole of conical inboard wall cannot achieve in the binary mask that light portion is constituted, with desired inclination angle.In Fig. 8 (b), by answering
Mask pattern shown in figure with downside, and positive-workingresist is used, it is capable of forming hole shown in the figure of upside.That is, diagram
Hole has bottom, the sidewall portion for being inclined to cone cell, the upper surface part being connected with rake, these bottoms, sidewall portion and upper table
Face is respectively formed at position corresponding with the transmittance section of mask pattern, semi-transparent film and photomask.In the example in the figures,
Wiring pattern is equipped in the lower part of the bottom in hole.In addition, the sidewall portion in hole and upper surface are covered by insulating film, and the insulating film
Surface formed by conductor electrode covering.This hole can be by being laminated semi-transparent film and photomask, and use is in shading
Delimitation light shielding part is formed on film and delimits the 1st resist pattern of the tentative pattern of semi light transmitting part to be formed.
In transfer pattern, it may be advantageous to applied in the pattern with the semi light transmitting part part adjacent with transmittance section.
Alternatively, it is also possible to be advantageously applied in pattern as without the light shielding part part adjacent with transmittance section, Fig. 3.
It include light shielding part in transfer pattern, semi-transparent in the case where applying the present invention to multi-gray scale photomas
Portion, transmittance section can be patterned respectively photomask, the semi-transparent film on transparent substrate and form transfer pattern.In addition,
Photomask is it is not necessary to have complete light-proofness in the present invention.Preferably, by the stacking with light-transmissive film, become optics
Concentration OD3 or more.More preferably, only by photomask, so that optical concentration OD becomes 3 or more (such as by exposure wavelength
When representing wavelength and being set as g line, OD can be the value that wavelength is represented for this).
In addition, as the semi-transparent film used in multi-gray scale photomas, it is preferable to use exposure light transmission rate be 20~
80%, 30~60% are more preferably, and phase shift effect is 90 ° or less, more preferably 60 ° of semi-transparent films below.It will expose
When the representative wavelength of light light is set as g line, transmitance, phase-shift phase may each be the value that wavelength is represented for this.
As the exposure optical wavelength used in transfer, it is preferable to use the broadband comprising i line, h line, g line.
It, can be using semi-transparent film as phase shift film in the case where applying the present invention to phase shifting mask.This mask can
To be the exposure mask in exposure using single wavelength.In addition, the phase shift film can make exposure wavelength (or it represents wavelength) phase
Move 180 ° (that is, (2n+1) π (n is integer)).It can be 30% or less about the semi-transparent film, such as exposure light transmission rate.Separately
Outside, the single wavelength is preferably determined into transmitance as wavelength is represented using single wavelength as exposure light
And phase-shift phase.
The present invention can be also used in the photomask of other purposes.For example, the present invention also can be applied to light shielding part with
The photomask when semi light transmitting part for adjusting the light intensity distributions for penetrating light is provided between transmittance section.Alternatively, can apply
Light when in order to reduce exposure irradiation amount, shorten the time of scan exposure and have semi-transparency in a part of light shielding part
In mask.In such a case it is possible to the use of exposure light transmission rate be 2~50%, phase shift effect is 90 ° of semi-transparent films below.
Certainly, even other films, for the photomask for needing description more than twice, excellent effect can also be obtained
Effect.In addition, can be applied the type of film is other types, as long as stacking the 1st film, the 2nd film, and by having each other
The material of etching selectivity is constituted.
<explanations of further function and effect of the invention>
In the present invention, the registration accuracy of the pattern formed by multiple patterning steps is high, therefore can be improved and also use
Yield rate in manufacturing process of other photomasks to form multiple layers of electronic equipment.In addition, the present invention is retouched not increasing
On this point of drawing process, productivity are high.
<explanation of photo mask material>
Herein, as the transparent substrate for constituting photomask, the quartz glass substrate etc. ground to surface is used.Greatly
It is small to be not particularly limited, can according to use the mask and the substrate (such as flat-panel monitor substrate etc.) that exposes suitably
It is selected.The rectangular substrate of unilateral 300mm or more can be used for example.
In the present invention, the photomask blank that semi-transparent film, photomask etc. are formed on the transparent substrate has been prepared.It hides
The material of light film and semi-transparent film has patience for mutual etchant (etching solution or etching gas).In addition, such as rear institute
It states, photomask will carry out lateral erosion in photomask patterning step, it is therefore preferred to be suitable for carrying out becoming for isotropic etching
The material of the significant wet etching of gesture.
In addition, semi-transparent film is it is preferred that be equipped on exposure when exposure machine is exposed for photomask of the invention
The semi-transparent film that a part of light penetrates.
The material of specific semi-transparent film illustrates as follows: in addition to Cr compound (oxide, nitride, carbide, the oxygen of Cr
Nitride, carbon oxynitride etc.), Si compound (SiO2, SOG), metal silicide (TaSi, MoSi, WSi or their nitrogen
Compound, oxynitride etc.) except, the Ti compounds such as TiON can also be used.
Shading membrane material is in addition to Cr Cr compound (oxide, nitride, carbide, oxynitride, the carbon oxygen nitrogen of Cr
Compound etc.) except, Ta, Mo, W or their compound (including above-mentioned metal silicide) etc. can also be used.
Therefore, when considering respective etching selectivity, such as Si compound, metal silication have been used in semi-transparent film
Object perhaps in the case where Ti compound shading membrane material be preferably Cr Cr compound combination.
About photomask and semi-transparent film, preferably (optical concentration OD is 3 to substantially impermeable overexposure light in the lamination state
More than), but according to the purposes of photomask, it can also be through a part (such as transmitance≤20%) of exposure light.Preferably,
Photomask be implemented separately 3 or more optical concentration photomask.
As long as being just not precluded within above-mentioned photomask, semi-transparent in addition, the layer structure of the manufacturing method of the present invention can be applied
On the basis of light film, the case where also forming other films.
It is formed with semi-transparent film, the photomask blank of photomask is further coating resist film and is become with resist
Photomask blank.Resist film is either eurymeric, being also possible to minus and (in the above-described embodiment, being said with eurymeric
It is bright).
Well known etchant can be used in the etchant (etching solution or etching gas) used for each membrane material.It is right
In containing Cr, Cr compound film (such as Cr photomask, on surface there is the antireflection layer that is formed by Cr compound
Film), can be used as chromium etchant and etching solution well known, comprising ammonium ceric nitrate.Alternatively, it is also possible to using
The dry ecthing of chlorine system gas.
Moreover, maying be used at the fluorides such as hydrofluoric acid, fluosilicic acid, ammonium acid fluoride for the film of MoSi or its compound
In the etching solution added with the oxidants such as hydrogen peroxide, nitric acid, sulfuric acid.Alternatively, the etching gas of fluorine system also can be used.
In addition, in the case where foring tentative pattern using these membrane materials, in the work for removing the etching of tentative pattern
, it is preferable to use wet etching in sequence.Moreover, all using wet etching more preferably in all etching work procedures.
<explanation of photomask of the invention>
The present invention includes the photomask manufactured by Fig. 6 and manufacturing method shown in Fig. 7.The photomask is especially having
It can advantageously be manufactured in the case where having the pattern of symmetry.For example, the pattern that (A)~(D) for having Fig. 3 is illustrated can be enumerated
The photomask of arrangement.In this case, it can prevent from describing by the 1st and the 2nd describes the pattern being respectively formed production each other
The drawbacks of giving birth to deviation and losing symmetry.
For example, as Fig. 3 (A) or (D) shown in, transfer pattern have according to transmittance section, semi light transmitting part, light shielding part,
In the case where the part that semi light transmitting part, the sequence of transmittance section are arranged along a direction, when being located at transmittance section in the orientation
Boundary between semi light transmitting part is D1, the shading in the orientation at a distance from the boundary between semi light transmitting part and light shielding part
When boundary between portion and semi light transmitting part is D2 at a distance from the boundary between semi light transmitting part and transmittance section, fixed tentatively using above-mentioned
Pattern can be realized the configuration being consistent with design, therefore enabling to the difference of D1 and D2 is 0.1 μm or less.
Similarly, as shown in (B) of Fig. 3 or (C), have in transfer pattern according to light shielding part, semi light transmitting part, light transmission
In the case where the part that portion, semi light transmitting part, the sequence of light shielding part are arranged along a direction, when being located at shading in the orientation
The distance between boundary between boundary and semi light transmitting part and transmittance section between portion and semi light transmitting part is D3, in the orientation
When boundary between upper transmittance section and semi light transmitting part is D4 at a distance from the boundary between semi light transmitting part and light shielding part, utilization is above-mentioned
Tentative pattern, can be realized and the configuration that is consistent of design, therefore enabling to the difference of D3 and D4 is 0.1 μm or less.
As described above, in photomask of the invention the excellent transfer pattern of symmetry can be obtained, therefore by making
With the photomask, it is capable of forming circuit pattern with high accuracy.
<explanation for having used the pattern transfer-printing method of photomask of the invention>
The invention also includes the pattern transfer-printing methods for having used the photomask obtained by above-mentioned manufacturing method.Moreover, also wrapping
Include flat-panel monitor (FPD) manufacturing method using the pattern transfer-printing method.In this case, it is exposed used in pattern transfer
Well known device can be used in device.For using photomask of the invention to be used when carrying out pattern transfer on transfer printing body
Exposure device, be not particularly limited.But, be suitably applied have comprising i line, h line, g line light source, so-called liquid
Crystal display (LCD) uses exposure device.For example, can be used only in the photomask of the invention for having used phase shift film figure
Single wavelength (such as i line) in above-mentioned wavelength is exposed.
In addition, the resist used on transfer printing body either eurymeric, is also possible to minus, can carry out depending on the application
Selection.
As described above, can be realized the pattern that can form circuit pattern with high accuracy by using photomask of the invention
Transfer method can manufacture the flat-panel monitor for having circuit pattern with high accuracy by applying the pattern transfer-printing method.
<explanations of other embodiments of the invention>
In the explanation of above embodiment, though it is shown that the case where forming semi-transparent film, photomask, even if being it
His film can also obtain identical function and effect.Therefore, as set forth above, it is possible to which above-mentioned semi-transparent film, photomask are renamed as
For lower membrane, upper layer film, the lower membrane, upper layer film can take arbitrary exposure light transmission rate.
Moreover, the present invention is not limited to the above embodiments, it further include other various embodiments.
Claims (8)
1. a kind of manufacturing method of photomask, which has, and lower layer's film figure is arranged in the stacking of upper layer film pattern
Transfer pattern obtained from bright substrate, lower layer's film figure and upper layer film figure be respectively to exposure light transmission rate each other
Made of different lower membranes and upper layer film is patterned, the manufacturing method of the photomask is characterized in that, has following work
Sequence:
Prepare the process of photomask blank, which is that stacking is selected by having to etch each other on the transparent substrate
Property the lower membrane that constitutes of material and the upper layer film, and then form obtained from the 1st resist film；
By carrying out the process that the 1st description and forms the 1st resist pattern, the 1st resist pattern to the 1st resist film
It is used to form the upper layer film figure and delimit the tentative pattern in the region of lower layer's film figure；
Using the 1st resist pattern as mask, the 1st etching work procedure that the upper layer film is etched；
It is including the work that the 2nd resist film is formed in the entire surface for being formed by the upper layer film figure and the tentative pattern
Sequence；
By carrying out the process that the 2nd description and forms the 2nd resist pattern, the 2nd resist pattern to the 2nd resist film
It is used to form lower layer's film figure；
Using the tentative pattern and the 2nd resist pattern as mask, the 2nd etching work that the lower membrane is etched
Sequence；And
Using the 2nd resist pattern as mask, etching removes the 3rd etching work procedure of the tentative pattern；
In the process for forming the 2nd resist pattern, so that a part of the tentative pattern is from the 2nd resist figure
The mode that the edge of case exposes carries out the described 2nd and describes,
The tentative pattern is size as follows: when carrying out the described 2nd and describing, even if the described 1st describe with it is described
There is opposite position deviation between 2nd description, a part of the tentative pattern also can be from the 2nd resist pattern
Expose at edge.
2. the manufacturing method of photomask according to claim 1, which is characterized in that
In the process that etching removes the tentative pattern, a part is exposed for from the edge of the 2nd resist pattern
State the tentative pattern, implement wet etching.
3. the manufacturing method of photomask according to claim 1 or 2, which is characterized in that
The width of the tentative pattern is 2 μm or less.
4. the manufacturing method of photomask according to claim 1 or 2, which is characterized in that
The transfer is sectional hole patterns or dot pattern with pattern.
5. the manufacturing method of photomask according to claim 1 or 2, which is characterized in that
The transfer is line and space pattern with pattern.
6. the manufacturing method of photomask according to claim 2, which is characterized in that
In the process for forming the 2nd resist pattern, so that the edge of the tentative pattern is with 0.1 μm~1.0 μm of width
The mode exposed is spent, the described 2nd is carried out and describes.
7. a kind of pattern transfer-printing method, which is characterized in that with the following process:
Using the photomask obtained by manufacturing method of any of claims 1 or 2, the transfer is transferred to pattern and is transferred
On body.
8. a kind of manufacturing method of flat-panel monitor, which is characterized in that
The manufacturing method has used pattern transfer-printing method as claimed in claim 7.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP2012-137171 | 2012-06-18 | ||
| JP2012137171A JP6063650B2 (en) | 2012-06-18 | 2012-06-18 | Photomask manufacturing method |
| CN201310238262.7A CN103513505B (en) | 2012-06-18 | 2013-06-17 | Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310238262.7A Division CN103513505B (en) | 2012-06-18 | 2013-06-17 | Photo mask, photo mask manufacturing method, pattern transfer method and flat panel display manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105223769A CN105223769A (en) | 2016-01-06 |
| CN105223769B true CN105223769B (en) | 2019-07-16 |
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| CN1476551A (en) * | 2000-07-16 | 2004-02-18 | �ÿ���˹�ݴ�ѧϵͳ���»� | High-resolution overlay alignment methods and systems for imprint lithography |
| CN1469429A (en) * | 2002-06-04 | 2004-01-21 | Nec液晶技术株式会社 | Method for producing thin film semiconductor and method for forming resist pattern thereof |
| CN101441408A (en) * | 2007-11-22 | 2009-05-27 | Hoya株式会社 | Photomask, manufacturing method thereof, and pattern transfer print method |
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