CN111627887A - Alignment mark pattern and chip structure comprising same - Google Patents
Alignment mark pattern and chip structure comprising same Download PDFInfo
- Publication number
- CN111627887A CN111627887A CN201910148762.9A CN201910148762A CN111627887A CN 111627887 A CN111627887 A CN 111627887A CN 201910148762 A CN201910148762 A CN 201910148762A CN 111627887 A CN111627887 A CN 111627887A
- Authority
- CN
- China
- Prior art keywords
- width
- gap
- line segment
- microns
- sum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 29
- 239000003550 marker Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Abstract
The invention provides an alignment mark pattern and a wafer structure comprising the same, wherein the alignment mark pattern comprises: a first region including a first line segment and a first gap, the first line segment extending in a first direction, the first line segment being different in width from the first gap; the second area comprises a second line segment and a second gap, the second line segment extends in the first direction, the second area and the first area are arranged diagonally, and the width of the second line segment is different from that of the second gap; a third region including a third line segment and a third gap, the third line segment extending in a second direction perpendicular to the first direction, the third region being adjacent to the first region and the second region, and the third line segment and the third gap having different widths; and the fourth area comprises a fourth line segment and a fourth gap, the fourth line segment extends in the second direction, the fourth area and the third area are arranged in a diagonal manner, the fourth area is adjacent to the first area and the second area, and the width of the fourth line segment is different from that of the fourth gap. The invention has the effects of improving poor acquisition of alignment mark exposure signal and reducing cost.
Description
Technical Field
The present invention relates to an alignment mark pattern, and more particularly, to an alignment mark pattern (alignment mark pattern) having different line/space sizes.
Background
The conventional epitaxial process has a great influence on the capture of alignment mark (alignment mark) exposure signals, and if the epitaxial process is performed for multiple times, the thickness of the epitaxial layer gradually increases, which affects the capture of the alignment mark exposure signals by the stepper motor (stepper), thereby causing serious process defects such as wafer reject (wafer reject) or overlay shift (overlay shift). Due to the future customization trend, increasing the number of epitaxy processes or increasing the thickness of epitaxy layers is an important consideration, and this requirement will seriously affect the capture effect of the stepper motor on the exposure signal of the alignment mark.
At present, the above-mentioned problem of poor capture of exposure signals is attempted to be solved by repeatedly fabricating a plurality of alignment marks on different epitaxial layers, however, since a plurality of related photolithography processes must be added while adding the alignment marks, the production cost is greatly increased and more process time is required.
Therefore, it is desirable to develop an align mark pattern that does not need to be repeatedly formed even when an epitaxial process is performed a plurality of times.
Disclosure of Invention
According to an embodiment of the present invention, there is provided an align mark pattern including: a first region including a plurality of first line segments and a plurality of first gaps alternately arranged to extend in a first direction, wherein the width of the first line segments is different from the width of the first gaps; a second region including a plurality of second line segments and a plurality of second gaps alternately arranged to extend in the first direction, the second region being diagonally arranged with respect to the first region, wherein widths of the second line segments are different from widths of the second gaps; a third region including a plurality of third line segments and a plurality of third gaps alternately arranged with each other and extending in a second direction perpendicular to the first direction, the third region being adjacent to the first region and the second region, wherein the third line segments have widths different from widths of the third gaps; and a fourth region including a plurality of fourth line segments and a plurality of fourth gaps alternately arranged to extend in the second direction, the fourth region being diagonally arranged with respect to the third region, the fourth region being adjacent to the first region and the second region, wherein the fourth line segments have widths different from widths of the fourth gaps.
In some embodiments, the sum of the width of a first line segment and the width of a first gap is greater than or less than the sum of the width of a second line segment and the width of a second gap.
In some embodiments, when the sum of the width of a first line segment and the width of a first gap is greater than the sum of the width of a second line segment and the width of a second gap, the sum of the width of a first line segment and the width of a first gap is about 11.6-26.6 microns, and the sum of the width of a second line segment and the width of a second gap is about 10-25 microns. In some embodiments, when the sum of the width of a first line segment and the width of a first gap is greater than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is about 1.8-12.8, the width of a first gap is about 6.3-24.8, the width of the first gap is greater than the width of the first line segment, the width of a second line segment is about 1-12 microns, the width of a second gap is about 5.5-24 microns, and the width of the second gap is greater than the width of the second line segment.
In some embodiments, when the sum of the width of a first line segment and the width of a first gap is smaller than the sum of the width of a second line segment and the width of a second gap, the sum of the width of a first line segment and the width of a first gap is about 10-25 microns, and the sum of the width of a second line segment and the width of a second gap is about 11.6-26.6 microns. In some embodiments, when the sum of the width of a first line segment and the width of a first gap is less than the sum of the width of a second line segment and the width of a second gap, the width of a first line segment is about 1-12, the width of a first gap is about 5.5-24, the width of the first gap is greater than the width of the first line segment, the width of a second line segment is about 1.8-12.8 micrometers, the width of a second gap is about 6.3-24.8 micrometers, and the width of the second gap is greater than the width of the second line segment.
In some embodiments, the sum of the width of a third line segment and the width of a third gap is greater than or less than the sum of the width of a fourth line segment and the width of a fourth gap.
In some embodiments, when the sum of the width of a third line segment and the width of a third gap is greater than the sum of the width of a fourth line segment and the width of a fourth gap, the sum of the width of a third line segment and the width of a third gap is approximately between 11.6 and 26.6 micrometers, and the sum of the width of a fourth line segment and the width of a fourth gap is approximately between 10 and 25 micrometers. In some embodiments, when the sum of the width of a third line segment and the width of a third gap is greater than the sum of the width of a fourth line segment and the width of a fourth gap, the width of the third line segment is about 1.8-12.8, the width of the third gap is about 6.3-24.8, the width of the third gap is greater than the width of the third line segment, the width of the fourth line segment is about 1-12 μm, the width of the fourth gap is about 5.5-24 μm, and the width of the fourth gap is greater than the width of the fourth line segment.
In some embodiments, when the sum of the width of a third line segment and the width of a third gap is smaller than the sum of the width of a fourth line segment and the width of a fourth gap, the sum of the width of a third line segment and the width of a third gap is about 10-25 μm, and the sum of the width of a fourth line segment and the width of a fourth gap is about 11.6-26.6 μm. In some embodiments, when the sum of the width of a third line segment and the width of a third gap is smaller than the sum of the width of a fourth line segment and the width of a fourth gap, the width of the third line segment is about 1-12, the width of the third gap is about 5.5-24, the width of the third gap is greater than the width of the third line segment, the width of the fourth line segment is about 1.8-12.8 micrometers, the width of the fourth gap is about 6.3-24.8 micrometers, and the width of the fourth gap is greater than the width of the fourth line segment.
In some embodiments, the alignment mark pattern further includes a cross pattern disposed between the first region and the second region, and between the third region and the fourth region. In some embodiments, the crisscross pattern includes a fifth line segment and a sixth line segment, and the fifth line segment is perpendicular to the sixth line segment. In some embodiments, the widths of the fifth line segment and the sixth line segment are between 3-17 μm. In some embodiments, the length of the fifth line segment and the sixth line segment is between 50-100 μm.
According to an embodiment of the present invention, there is provided a wafer structure including: a chip having a plurality of mark regions; a material layer formed on the wafer; a plurality of alignment mark patterns are arranged on the material layer and positioned in the mark areas of the chip.
In some embodiments, the mark regions are adjacent to the edge of the wafer. In some embodiments, the layer of material comprises an epitaxial layer. In some embodiments, the material layer has a thickness of about 6-10 microns. In some embodiments, the alignment mark patterns are disposed opposite to each other.
The present invention performs the alignment operation in the semiconductor process according to the process requirement by using the alignment mark pattern designed and composed of different line/gap sizes and the gap size larger than the line size according to the proper total width (pitch) size condition of the single line/gap (line/space) (for example, the total width (pitch) size of the single line/gap is between 10-25 μm). Because the gap size is designed to be larger than the line size, which is different from the traditional design of making the line segment/gap into the same size, even under the condition of multiple epitaxial processes, the alignment mark pattern can still keep quite good exposure signal intensity because the gap size with enough depth/width can accommodate more epitaxial materials therein, and the problem of poor acquisition of the alignment mark exposure signal by a stepping motor (stepper) caused by increasing the epitaxial process times or the epitaxial layer thickness is effectively improved. The invention can continue the subsequent alignment process without additionally arranging additional alignment mark patterns on other layers, thereby effectively reducing the overall production cost and avoiding the process time required by the additional process.
Drawings
FIG. 1 is a top view of an alignment mark pattern according to an embodiment of the present invention;
FIG. 2 is a top view of a wafer structure including an alignment mark pattern according to one embodiment of the present invention;
FIG. 3 is a method for verifying alignment mark patterns and exposure signals composed of different line/space sizes according to one embodiment of the present invention;
FIG. 4 is a graph of alignment mark patterns and exposure signals composed of different line/space sizes, according to an embodiment of the present invention.
Symbol number:
10 align mark pattern
10' photomask
10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t fiducial mark pattern
12 first zone
14 second zone
16 third zone
18 fourth zone
20a first line segment
20b first gap
22 first direction
24a second line segment
24b second gap
26a third line segment
26b third gap
28 second direction
30a fourth line segment
30b fourth gap
32 sum of width of the first line segment and width of the first gap
34 sum of width of the second line segment and width of the second gap
36 sum of width of the third line segment and width of the third gap
38 sum of the width of the fourth line segment and the width of the fourth gap
40 cruciform pattern
42 fifth line segment
44 sixth line segment
100 wafer structure
102 wafer
102' edge of wafer
104 mark region
106 layers of material
R13 distance separating the first and third zones
R14 distance separating the first and fourth regions
R23 distance separating the second and third zones
R24 distance separating the second and fourth regions
Ra first region is spaced from the second region by a distance
Rb distance separating the third and fourth regions
L the length of the fifth line segment and the sixth line segment
W width of fifth and sixth line segments
W1a Width of first line segment
W1b first gap Width
Width of W2a second line segment
W2b second gap Width
Width of W3a third line segment
Width of W3b third gap
Width of fourth line segment of W4a
Width of W4b fourth gap
Detailed Description
Referring to fig. 1, an alignment mark pattern (alignment mark pattern)10 is provided according to an embodiment of the present invention. Fig. 1 is a top view of an align mark pattern 10.
As shown in fig. 1, an alignment mark pattern (alignment mark pattern)10 includes a first region 12, a second region 14, a third region 16, and a fourth region 18. The first region 12 includes a plurality of first segments 20a and a plurality of first gaps 20b, the first gaps 20b are respectively located between the first segments 20a, the first segments 20a are parallel to each other and extend in the first direction 22, and it is noted that the width W1a of the first segments 20a is different from the width W1b of the first gaps 20 b. The second region 14 includes a plurality of second line segments 24a and a plurality of second gaps 24b, the second gaps 24b are respectively located between the second line segments 24a, the second line segments 24a are parallel to each other and extend in the first direction 22, the second region 14 is disposed diagonally to the first region 12 and separated by a specific distance Ra, and it is noted that the width W2a of the second line segments 24a is different from the width W2b of the second gaps 24 b. The third region 16 includes a plurality of third line segments 26a and a plurality of third gaps 26b, the third gaps 26b are respectively located between the third line segments 26a, the third line segments 26a are parallel to each other and extend in a second direction 28, the second direction 28 is perpendicular to the first direction 22, the third region 16 is adjacent to the first region 12 and separated by a specific distance R13, the third region 16 is adjacent to the second region 14 and separated by a specific distance R23, the third region 16 and the first region 12 are arranged along the second direction 28, the third region 16 and the second region 14 are arranged along the first direction 22, and it is noted that the width W3a of the third line segment 26a is different from the width W3b of the third gap 26 b. The fourth region 18 includes a plurality of fourth line segments 30a and a plurality of fourth gaps 30b, the fourth gaps 30b are respectively located between the fourth line segments 30a, the fourth line segments 30a are parallel to each other and extend in the second direction 28, the fourth region 18 is diagonally disposed from the third region 16 and separated by a specific distance Rb, the fourth region 18 is adjacent to the first region 12 and separated by a specific distance R14, the fourth region 18 is adjacent to the second region 14 and separated by a specific distance R24, the fourth region 18 is aligned with the first region 12 along the first direction 22, and the fourth region 18 is aligned with the second region 14 along the second direction 28, it is noted that the width W4a of the fourth line segments 30a is different from the width W4b of the fourth gaps 30 b.
In some embodiments, the specific distance Ra between the first region 12 and the second region 14, the specific distance Rb between the third region 16 and the fourth region 18, the specific distance R13 between the first region 12 and the third region 16, the specific distance R14 between the first region 12 and the fourth region 18, the specific distance R23 between the second region 14 and the third region 16, and the specific distance R24 between the second region 14 and the fourth region 18 may comprise any suitable distance to meet the specification of the fiducial mark pattern 10.
First, the structural features of each line segment/gap in the first region 12 and the second region 14 will be described.
In some embodiments, the sum (pitch)32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b may be greater than or less than the sum (pitch)34 of the width W2a of the second segment 24a and the width W2b of the second gap 24 b.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is greater than the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b, the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is approximately between 11.6 and 26.6 microns, such as 11.6, 17.6, or 26.6 microns, and the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b is approximately between 10 and 25 microns, such as 10, 16, or 25 microns. In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is greater than the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b, the width W1a of the first segment 20a is approximately between 1.8 and 12.8 micrometers, the width W1b of the first gap 20b is approximately between 6.3 and 24.8 micrometers, the width W1b of the first gap 20b is greater than the width W1a of the first segment 20a, the width W2a of the second segment 24a is approximately between 1 and 12 micrometers, the width W2b of the second gap 24b is approximately between 5.5 and 24 micrometers, and the width W2b of the second gap 24b is greater than the width W2a of the second segment 24 a.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 11.6 microns, the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any combination of dimensions that are not equal to each other, such as (1) the width W1a of the first segment 20a is about 1.8 microns, the width W1b of the first gap 20b is about 9.8 microns, (2) the width W1a of the first segment 20a is about 2.3 microns, the width W1b of the first gap 20b is about 9.3 microns, (3) the width W1a of the first segment 20a is about 2.8 microns, the width W1b of the first gap 20b is about 8.8 microns, (4) the width W1a of the first segment 20a is about 3.3 microns, the width W1 of the first gap 20b is about 7.5398 microns, (4) the width W1b of the first segment 20a is about 3.8 microns, the width W1b is about 8 microns, (6) the width W1a of the first segment 20a is approximately 4.3 microns, the width W1b of the first gap 20b is approximately 7.3 microns, (7) the width W1a of the first segment 20a is approximately 4.8 microns, and the width W1b of the first gap 20b is approximately 6.8 microns, or (8) the width W1a of the first segment 20a is approximately 5.3 microns, and the width W1b of the first gap 20b is approximately 6.3 microns (the sum of the width W1a of the first segment 20a and the width W1b of the first gap 20b (pitch)32 is 11.6 microns).
At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 10 microns, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of dimensions that are not equal to each other, such as (1) the width W2a of the second line segment 24a is about 1 micron, the width W2b of the second gap 24b is about 9 microns, (2) the width W2a of the second line segment 24a is about 1.5 microns, the width W2b of the second gap 24b is about 8.5 microns, (3) the width W2a of the second line segment 24a is about 2 microns, the width W2b of the second gap 24b is about 8 microns, (4) the width W2a of the second line segment 24a is about 2.5 microns, the width W2b of the second gap 24b is about 7.5 microns, (5) the width W2a of the second line segment 24a is about 3 microns, the width 2b is about 3 microns, (6) the width W2a of the second line segment 24a is about 3.5 microns, the width W2b of the second gap 24b is about 6.5 microns, (7) the width W2a of the second line segment 24a is about 4 microns, the width W2b of the second gap 24b is about 6 microns, or (8) the width W2a of the second line segment 24a is about 4.5 microns, and the width W2b of the second gap 24b is about 5.5 microns (the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b (pitch)34 is 10 microns). In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is about 0.8 microns greater than the width W2a of the second segment 24 a. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 microns.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 17.6 microns, the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any combination of dimensions that are not equal to each other, such as (1) the width W1a of the first segment 20a is about 1.8 microns, the width W1b of the first gap 20b is about 15.8 microns, (2) the width W1a of the first segment 20a is about 2.3 microns, the width W1b of the first gap 20b is about 15.3 microns, (3) the width W1a of the first segment 20a is about 2.8 microns, the width W1b of the first gap 20b is about 14.8 microns, (4) the width W1a of the first segment 20a is about 3.3 microns, the width W1b of the first gap 20b is about 2.8 microns, the width W1b is about 14.8 microns, (4) the width W1a of the first segment 20a is about 3.3.3 microns, the width W1b is about b.8 microns, (4) the width W1b is about 3.8 microns, (6) width W1a of first line segment 20a is about 4.3 microns, width W1b of first gap 20b is about 13.3 microns, (7) width W1a of first line segment 20a is about 4.8 microns, width W1b of first gap 20b is about 12.8 microns, (8) width W1a of first line segment 20a is about 5.3 microns, width W1b of first gap 20b is about 12.3 microns, (9) width W1a of first line segment 20a is about 5.8 microns, width W1b of first gap 20b is about 11.8 microns, (10) width W1a of first line segment 20a is about 6.3 microns, width W1b of first gap 20b is about 11.3 microns, (11) width W1a of first line segment 20a is about 6.8 microns, width W1 b.7 of first gap 20b is about 10.8 microns, (11) width W1 462 a of first line segment 20a is about 6.8 microns, width W1b is about 10. b microns, (13) the width W1a of the first segment 20a is approximately 7.8 microns and the width W1b of the first gap 20b is approximately 9.8 microns, or (14) the width W1a of the first segment 20a is approximately 8.3 microns and the width W1b of the first gap 20b is approximately 9.3 microns (the sum of the width W1a of the first segment 20a and the width W1b of the first gap 20b (pitch)32 is 17.6 microns).
At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 16 microns, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of dimensions that are not equal to each other, such as (1) the width W2a of the second line segment 24a is about 1 micron, the width W2b of the second gap 24b is about 15 microns, (2) the width W2a of the second line segment 24a is about 1.5 microns, the width W2b of the second gap 24b is about 14.5 microns, (3) the width W2a of the second line segment 24a is about 2 microns, the width W2b of the second gap 24b is about 14 microns, (4) the width W2a of the second line segment 24a is about 2.5 microns, the width W2b of the second gap 24b is about 13.5 microns, (5) the width W2 of the second line segment 24a is about 632 b b, and the width W2b is about b 68513 microns, (6) width W2a of second line segment 24a is about 3.5 microns, width W2b of second gap 24b is about 12.5 microns, (7) width W2a of second line segment 24a is about 4 microns, width W2b of second gap 24b is about 12 microns, (8) width W2a of second line segment 24a is about 4.5 microns, width W2b of second gap 24b is about 11.5 microns, (9) width W2a of second line segment 24a is about 5 microns, width W2b of second gap 24b is about 11 microns, (10) width W2a of second line segment 24a is about 5.5 microns, width W2b of second gap 24b is about 10.5 microns, (11) width W2a of second line segment 24a is about 6 microns, width W2 637 of second gap 24b is about 10.5 microns, (12) width W2a of second line segment 24a is about 6 microns, width W2b of second gap 24b is about 10.5 microns, (11) width W2 5392 b is about 6 microns, (13) the width W2a of the second line segment 24a is approximately 7 microns and the width W2b of the second gap 24b is approximately 9 microns, or (14) the width W2a of the second line segment 24a is approximately 7.5 microns and the width W2b of the second gap 24b is approximately 8.5 microns (the sum of the width W2a of the second line segment 24a and the width W2b of the second gap 24b (pitch)34 is 16 microns). In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is about 0.8 microns greater than the width W2a of the second segment 24 a. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 microns.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 26.6 microns, the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any combination of dimensions that are not equal to each other, such as (1) the width W1a of the first segment 20a is about 1.8 microns, the width W1b of the first gap 20b is about 24.8 microns, (2) the width W1a of the first segment 20a is about 2.3 microns, the width W1b of the first gap 20b is about 24.3 microns, (3) the width W1a of the first segment 20a is about 2.8 microns, the width W1b of the first gap 20b is about 23.8 microns, (4) the width W1a of the first segment 20a is about 3.3 microns, the width W1b of the first gap 20b is about 2.8 microns, the width W1b is about 23.8 microns, (4) the width W1a of the first segment 20a is about 3.3.3 microns, the width W1b is about b.8 microns, (6) width W1a of first line segment 20a is about 4.3 microns, width W1b of first gap 20b is about 22.3 microns, (7) width W1a of first line segment 20a is about 4.8 microns, width W1b of first gap 20b is about 21.8 microns, (8) width W1a of first line segment 20a is about 5.3 microns, width W1b of first gap 20b is about 21.3 microns, (9) width W1a of first line segment 20a is about 5.8 microns, width W1b of first gap 20b is about 20.8 microns, (10) width W1a of first line segment 20a is about 6.3 microns, width W1b of first gap 20b is about 20.3 microns, (11) width W1a of first line segment 20a is about 6.8 microns, width W1 b.7 of first gap 20b is about 19.19 microns, (11) width W1 5392 a of first line segment 20a is about 6.8 microns, width W1b is about 19. b microns, (13) width W1a of first line segment 20a is about 7.8 microns, width W1b of first gap 20b is about 18.8 microns, (14) width W1a of first line segment 20a is about 8.3 microns, width W1b of first gap 20b is about 18.3 microns, (15) width W1a of first line segment 20a is about 8.8 microns, width W1b of first gap 20b is about 17.8 microns, (16) width W1a of first line segment 20a is about 9.3 microns, width W1b of first gap 20b is about 17.3 microns, (17) width W1a of first line segment 20a is about 9.8 microns, width W1b of first gap 20b is about 16.8 microns, (18) width W1a of first line segment 20a is about 10.3 microns, width W1 b.7 microns of first gap 20b is about 16.8 microns, (18) width W1a of first line segment 20a is about 10.3 microns, width W1b is about 16.8 microns, (16.8 microns, (20) the width W1a of the first segment 20a is approximately 11.3 microns, the width W1b of the first gap 20b is approximately 15.3 microns, (21) the width W1a of the first segment 20a is approximately 11.8 microns, the width W1b of the first gap 20b is approximately 14.8 microns, (22) the width W1a of the first segment 20a is approximately 12.3 microns, the width W1b of the first gap 20b is approximately 14.3 microns, or (23) the width W1a of the first segment 20a is approximately 12.8 microns, the width W1b of the first gap 20b is approximately 13.8 microns (the sum of the width W1a of the first segment 20a and the width W1b of the first gap 20b (pitch)32 is 26.6 microns).
At this time, the sum 34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b is 25 microns, the width W2a of the second line segment 24a and the width W2b of the second gap 24b may include any combination of dimensions that are not equal to each other, such as (1) the width W2a of the second line segment 24a is about 1 micron, the width W2b of the second gap 24b is about 24 microns, (2) the width W2a of the second line segment 24a is about 1.5 microns, the width W2b of the second gap 24b is about 23.5 microns, (3) the width W2a of the second line segment 24a is about 2 microns, the width W2b of the second gap 24b is about 23 microns, (4) the width W2a of the second line segment 24a is about 2.5 microns, the width W2b of the second gap 24b is about 22.5 microns, (5) the width W2 of the second line segment 24a is about 632 b b is about 22.5 microns, (6) width W2a of second line segment 24a is about 3.5 microns, width W2b of second gap 24b is about 21.5 microns, (7) width W2a of second line segment 24a is about 4 microns, width W2b of second gap 24b is about 21 microns, (8) width W2a of second line segment 24a is about 4.5 microns, width W2b of second gap 24b is about 20.5 microns, (9) width W2a of second line segment 24a is about 5 microns, width W2b of second gap 24b is about 20 microns, (10) width W2a of second line segment 24a is about 5.5 microns, width W2b of second gap 24b is about 19.5 microns, (11) width W2a of second line segment 24a is about 6 microns, width W2b of second gap 24b is about 19.5 microns, (12) width W2a of second line segment 24a is about 6 microns, width W2b b is about 6 microns, (13) width W2a of second line segment 24a is about 7 microns, width W2b of second gap 24b is about 18 microns, (14) width W2a of second line segment 24a is about 7.5 microns, width W2b of second gap 24b is about 17.5 microns, (15) width W2a of second line segment 24a is about 8 microns, width W2b of second gap 24b is about 17 microns, (16) width W2a of second line segment 24a is about 8.5 microns, width W2b of second gap 24b is about 16.5 microns, (17) width W2a of second line segment 24a is about 9 microns, width W2b of second gap 24b is about 16 microns, (18) width W2a of second line segment 24a is about 9.5 microns, width W2b of second gap 24b is about 15.5 microns, (19) width W2 of second line segment 24a is about 10 microns, width W2b b is about b microns, (20) width W2a of second segment 24a is approximately 10.5 microns, width W2b of second gap 24b is approximately 14.5 microns, (21) width W2a of second segment 24a is approximately 11 microns, width W2b of second gap 24b is approximately 14 microns, (22) width W2a of second segment 24a is approximately 11.5 microns, width W2b of second gap 24b is approximately 13.5 microns, or (23) width W2a of second segment 24a is approximately 12 microns, width W2b of second gap 24b is approximately 13 microns (the sum of width W2a of second segment 24a and width W2b of second gap 24b (pitch)34 is 25 microns). In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is about 0.8 microns greater than the width W2a of the second segment 24 a. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is greater than the width W2b of the second gap 24b by about 0.8 microns.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is less than the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b, the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is approximately between 10-25 microns, such as 10, 16, or 25 microns, and the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b is approximately between 11.6-26.6 microns, such as 11.6, 17.6, or 26.6 microns. In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is less than the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b, the width W1a of the first segment 20a is approximately between 1-12 microns, the width W1b of the first gap 20b is approximately between 5.5-24 microns, and the width W1b of the first gap 20b is greater than the width W1a of the first segment 20a, the width W2a of the second segment 24a is approximately between 1.8-12.8 microns, the width W2b of the second gap 24b is approximately between 6.3-24.8 microns, and the width W2b of the second gap 24b is greater than the width W2a of the second segment 24 a.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 10 micrometers (when the width W2a of the second segment 24a and the sum 34 of the width W2b of the second gap 24b are 11.6 micrometers, respectively), the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any size combination that is not equal to each other as listed above (only the sum (pitch)32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 10 micrometers), and similarly, the width W2a of the second segment 24a and the width W2b b may include any size combination that is not equal to each other as listed above (only the sum (pitch)34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b is 11.6 micrometers), and thus, any size combination may not meet all the requirements. In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is less than the width W2a of the second segment 24a by about 0.8 microns. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is less than the width W2b of the second gap 24b by about 0.8 microns.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 16 micrometers (when the width W2a of the second segment 24a and the sum 34 of the widths W2b of the second gap 24b are 17.6 micrometers, respectively), the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any size combination that is not equal to each other as listed above (only the sum (pitch)32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 16 micrometers), and similarly, the width W2a of the second segment 24a and the width W2b b may include any size combination that is not equal to each other as listed above (only the sum (pitch)34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b is no longer equal to any size combination listed here). In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is less than the width W2a of the second segment 24a by about 0.8 microns. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is less than the width W2b of the second gap 24b by about 0.8 microns.
In some embodiments, when the sum 32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 25 micrometers (when the sum 34 of the width W2a of the second segment 24a and the width W2b of the second gap 24b is 26.6 micrometers), the width W1a of the first segment 20a and the width W1b of the first gap 20b may include any size combination that is not equal to each other as listed above (only the sum (pitch)32 of the width W1a of the first segment 20a and the width W1b of the first gap 20b is 25 micrometers), and similarly, the width W2a of the second segment 24a and the width W2b b may include any size combination that is not equal to each other as listed above (only the sum (pitch) 34.6) of the width W2a of the second segment 24a and the width W2b of the second gap 24b is no longer a size combination of any size combination listed above. In some embodiments, the width W1a of the first segment 20a differs from the width W2a of the second segment 24a by about 0.8 microns, e.g., the width W1a of the first segment 20a is less than the width W2a of the second segment 24a by about 0.8 microns. Similarly, the width W1b of the first gap 20b and the width W2b of the second gap 24b are different by about 0.8 microns, for example, the width W1b of the first gap 20b is less than the width W2b of the second gap 24b by about 0.8 microns.
Next, the structural features of the line segments/gaps in the third region 16 and the fourth region 18 will be described.
In some embodiments, the sum (pitch)36 of the width W3a of the third segment 26a and the width W3b of the third gap 26b may be greater than or less than the sum (pitch)38 of the width W4a of the fourth segment 30a and the width W4b of the second gap 30 b.
In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is greater than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is approximately between 11.6 and 26.6 microns, such as 11.6, 17.6, or 26.6 microns, and the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is approximately between 10 and 25 microns, such as 10, 16, or 25 microns. In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is greater than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the width W3a of the third line segment 26a is approximately between 1.8-12.8 microns, the width W3b of the third gap 26b is approximately between 6.3-24.8 microns, and the width W3b of the third gap 26b is greater than the width W3a of the third line segment 26a, the width W4a of the fourth line segment 30a is approximately between 1-12 microns, the width W4b of the fourth gap 30b is approximately between 5.5-24 microns, and the width W4b of the fourth gap 30b is greater than the width W4a of the fourth line segment 30 a.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 11.6 micrometers (when the widths W4a of the fourth line segment 30a and the sum 38 of the widths W4b of the fourth gap 30b are 10 micrometers, respectively), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combinations that are not equal to each other, as listed above (only the sum (pitch)36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 11.6 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combinations that are not equal to each other, as listed above (only the sum (pitch)36 of the widths W4a of the widths W4b of the third line segment 30a and the width W4b of the fourth gap 30b is 10 micrometers), which may not be repeated herein. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is about 0.8 microns greater than the width W4a of the fourth segment 30 a. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 17.6 micrometers (when the sum 38 of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 16 micrometers), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combination that is not equal to each other as listed above (only the sum (pitch)36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is equal to 17.6 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combination that is not equal to each other as listed above (only the sum (pitch)36 of the widths W4a of the widths W4 of the third line segment 30a and the widths W4b of the fourth gap 30b is equal to 16 micrometers), which may not be repeated herein. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is about 0.8 microns greater than the width W4a of the fourth segment 30 a. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 26.6 micrometers (when the sum 38 of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 25 micrometers), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combination that is not equal to each other as listed above (only the sum 36 (pitch) of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b corresponds to 26.6 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combination that is not equal to each other as listed above (only the sum 36 (only the sum of the widths W4a of the width W4 of the third line segment 30a and the widths W4b of the fourth gap 30b (pitch 38) may no longer correspond to the above combinations. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is about 0.8 microns greater than the width W4a of the fourth segment 30 a. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is greater than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is less than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is approximately between 10-25 microns, such as 10, 16, or 25 microns, and the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b is approximately between 11.6-26.6 microns, such as 11.6, 17.6, or 26.6 microns. In some embodiments, when the sum 36 of the width W3a of the third line segment 26a and the width W3b of the third gap 26b is less than the sum 38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b, the width W3a of the third line segment 26a is approximately between 1-12 microns, the width W3b of the third gap 26b is approximately between 5.5-24 microns, and the width W3b of the third gap 26b is greater than the width W3a of the third line segment 26a, the width W4a of the fourth line segment 30a is approximately between 1.8-12.8 microns, the width W4b of the fourth gap 30b is approximately between 6.3-24.8 microns, and the width W4b of the fourth gap 30b is greater than the width W4a of the fourth line segment 30 a.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 10 micrometers (when the sum 38 of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 11.6 micrometers), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combination that is not equal to each other as listed above (only the sum (pitch)36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 10 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combination that is not equal to each other as listed above (only the sum (the sum 38) of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 11.38), which may be repeated herein. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is less than the width W4a of the fourth segment 30a by about 0.8 microns. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is less than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 16 micrometers (when the sum 38 of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 17.6 micrometers), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combination that is not equal to each other as listed above (only the sum (pitch)36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b corresponds to 16 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combination that is not equal to each other as listed above (only the sum (sum 38) of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b corresponds to 17.38 micrometers), which may be repeated herein. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is less than the width W4a of the fourth segment 30a by about 0.8 microns. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is less than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, when the sum 36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b is 25 micrometers (when the sum 38 of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b is 26.6 micrometers), the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b may include any size combination that is not equal to each other as listed above (only the sum (pitch)36 of the widths W3a of the third line segment 26a and the widths W3b of the third gap 26b corresponds to 25 micrometers), and similarly, the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b may include any size combination that is not equal to each other as listed above (only the sum (the sum 38) of the widths W4a of the fourth line segment 30a and the widths W4b of the fourth gap 30b (pitch 26.38) may not be repeated herein. In some embodiments, the width W3a of the third segment 26a differs from the width W4a of the fourth segment 30a by about 0.8 microns, e.g., the width W3a of the third segment 26a is less than the width W4a of the fourth segment 30a by about 0.8 microns. Similarly, the width W3b of the third gap 26b is different from the width W4b of the fourth gap 30b by about 0.8 microns, for example, the width W3b of the third gap 26b is less than the width W4b of the fourth gap 30b by about 0.8 microns.
In some embodiments, the fiducial mark pattern 10 further includes a cross pattern 40 disposed between the first region 12 and the second region 14, and between the third region 16 and the fourth region 18. In some embodiments, the cruciform pattern 40 includes a fifth line segment 42 and a sixth line segment 44, with the fifth line segment 42 being perpendicular to the sixth line segment 44. In some embodiments, the width W of the fifth line segment 42 and the sixth line segment 44 is between about 3-17 μm. In some embodiments, the length L of the fifth line segment 42 and the sixth line segment 44 is between about 50-100 microns.
Referring to FIG. 2, a wafer structure 100 including an alignment mark pattern 10 as shown in FIG. 1 is provided according to an embodiment of the present invention. FIG. 2 is a top view of a wafer structure 100 including the fiducial mark pattern 10 shown in FIG. 1.
As shown in fig. 2, the wafer structure 100 includes: a wafer 102 having a plurality of mark regions 104; a material layer 106 formed on the wafer 102; a plurality of the alignment mark patterns 10, as shown in FIG. 1, are disposed on the material layer 106 and within the mark region 104 of the wafer 102.
In some embodiments, the mark region 104 is adjacent to the edge 102' of the wafer 102. In some embodiments, the material layer 106 may comprise an epitaxial layer. In some embodiments, the thickness of the material layer 106 is approximately between 6-10 microns. In some embodiments, the fiducial mark patterns 10 are disposed opposite to each other, as shown in FIG. 2.
Example 1
And verifying the relation between the alignment mark pattern composed of different line segment/gap sizes and the exposure signal.
Referring to FIG. 3, the method for verifying the relationship between the alignment mark pattern and the exposure signal formed by different line/space sizes is as follows: first, a wafer 102 is provided. Thereafter, an epitaxial material layer 106 with a thickness of 8 μm is formed on the wafer 102. Then, 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) on the mask 10 'are formed on the epitaxial material layer 106 by exposure using the mask 10' and are located in the two mark regions 104 of the wafer 102, respectively. In the present embodiment (please refer to fig. 1), the sum (pitch)32 of the width W1a of the first line segment 20a and the width W1b of the first gap 20b in the 1 st region 12 in the 20-group alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) is 17.6 microns, the sum (pitch)38 of the width W4a of the fourth line segment 30a and the width W4b of the fourth gap 30b in the 4 th region 18 is 17.6 microns, the sum (pitch)34 of the width W2a of the second line segment 24a and the width W2b of the second gap 24b in the 2 nd region 14 is 16 microns, and the sum (pitch) of the width W3b of the width W2 389 26a and the width W3b of the third gap 3926 b in the 3 rd region 16 is 16 microns. The line segment/gap size distributions of the 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) are shown in table 1 from left to right, from top to bottom respectively:
TABLE 1 alignment mark pattern respective line/gap size distribution
TABLE 1
Then, a first exposure signal test was performed on 20 sets of alignment mark patterns (10a, 10B, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) on the epitaxial material layer 106, and the intensity of the exposure signals was measured as a curve a (gap depth of 120 nm) and a curve B (gap depth of 150 nm), as shown in fig. 4. Thereafter, a second epitaxial material layer (not shown) with a thickness of 6 μm is formed on the epitaxial material layer 106. Then, a second exposure signal test was performed on 20 sets of alignment mark patterns (10a, 10b, 10C, 10D, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) on the epitaxial material layer 106, and the intensity of the exposure signals was measured as a curve C (gap depth of 120 nm) and a curve D (gap depth of 150 nm), as shown in fig. 4. Thereafter, a third epitaxial material layer (not shown) with a thickness of 2 μm was formed on the second epitaxial material layer. Then, a third exposure signal test was performed on 20 sets of alignment mark patterns (10a, 10b, 10c, 10d, 10E, 10F, 10g, 10h, 10i, 10j, 10k, 10l, 10m, 10n, 10o, 10p, 10q, 10r, 10s, 10t) on the epitaxial material layer 106, and the intensity of the exposure signals was measured as a curve E (gap depth of 120 nm) and a curve F (gap depth of 150 nm), as shown in fig. 4.
As can be seen from FIG. 4, when 20 sets of the alignment mark patterns on the epitaxial material layer 106 are subjected to the second exposure signal test (at this time, the alignment mark patterns are covered with the second epitaxial material layer with the thickness of 6 μm), 12 sets of the alignment mark patterns (10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l) with different line/gap sizes and the gap size larger than the line size can reach an exposure signal intensity of more than 1, and similarly, when the 20 sets of the alignment mark patterns on the epitaxial material layer 106 are subjected to the third exposure signal test (at this time, the alignment mark patterns are covered with the second epitaxial material layer with the thickness of 6 μm and the third epitaxial material layer with the thickness of 2 μm), 12 sets of the alignment mark patterns (10a ) with different line/gap sizes and the gap size larger than the line size, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 10j, 10k, 10l) still reach exposure signal intensities above 1. It is shown that the alignment mark pattern formed by the special line/space size of the present invention can maintain a relatively good exposure signal intensity even though the epitaxial process is performed a plurality of times, and the subsequent alignment process can be continued without providing an additional alignment mark pattern.
The present invention performs the alignment operation in the semiconductor process according to the process requirement by using the alignment mark pattern designed and composed of different line/gap sizes and the gap size larger than the line size according to the proper total width (pitch) size condition of the single line/gap (line/space) (for example, the total width (pitch) size of the single line/gap is between 10-25 μm). Because the gap size is designed to be larger than the line size, which is different from the traditional design of making the line segment/gap into the same size, even under the condition of multiple epitaxial processes, the alignment mark pattern can still keep quite good exposure signal intensity because the gap size with enough depth/width can accommodate more epitaxial materials therein, and the problem of poor acquisition of the alignment mark exposure signal by a stepping motor (stepper) caused by increasing the epitaxial process times or the epitaxial layer thickness is effectively improved. The invention can continue the subsequent alignment process without additionally arranging additional alignment mark patterns on other layers, thereby effectively reducing the overall production cost and avoiding the process time required by the additional process.
The features of the above-described embodiments are helpful to persons skilled in the art in understanding the present invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced above. It should also be understood by those skilled in the art that such equivalent substitutions may be made without departing from the spirit and scope of the present invention, and that changes, substitutions, or alterations may be made without departing from the spirit and scope of the present invention.
Claims (20)
1. An alignment mark pattern, comprising:
a first region including a plurality of first line segments and a plurality of first gaps alternately arranged with each other and extending in a first direction, wherein widths of the first line segments are different from widths of the first gaps;
a second region including a plurality of second line segments and a plurality of second gaps alternately arranged with each other to extend in the first direction, the second region being diagonally arranged from the first region, wherein widths of the second line segments are different from widths of the second gaps;
a third region including a plurality of third line segments and a plurality of third gaps alternately arranged with each other and extending in a second direction perpendicular to the first direction, the third region being adjacent to the first region and the second region, wherein widths of the third line segments are different from widths of the third gaps; and
a fourth region including a plurality of fourth line segments and a plurality of fourth gaps alternately arranged with each other and extending in the second direction, the fourth region being diagonally arranged with respect to the third region, the fourth region being adjacent to the first region and the second region, wherein widths of the fourth line segments are different from widths of the fourth gaps.
2. The pattern of claim 1, wherein the sum of the width of a first line segment and the width of a first gap is greater than or less than the sum of the width of a second line segment and the width of a second gap.
3. The pattern of claim 2, wherein when a sum of a width of a first line segment and a width of a first gap is greater than a sum of a width of a second line segment and a width of a second gap, the sum of the width of a first line segment and the width of a first gap is between 11.6-26.6 microns, and the sum of the width of a second line segment and the width of a second gap is between 10-25 microns.
4. The pattern of claim 3, wherein when a sum of a width of a first line segment and a width of a first gap is greater than a sum of a width of a second line segment and a width of a second gap, the width of a first line segment is between 1.8 and 12.8, the width of a first gap is between 6.3 and 24.8, and the width of the first gap is greater than the width of the first line segment, the width of a second line segment is between 1 and 12 microns, the width of a second gap is between 5.5 and 24 microns, and the width of the second gap is greater than the width of the second line segment.
5. The pattern of claim 2, wherein when a sum of a width of a first line segment and a width of a first gap is less than a sum of a width of a second line segment and a width of a second gap, the sum of the width of a first line segment and the width of a first gap is between 10-25 μm, and the sum of the width of a second line segment and the width of a second gap is between 11.6-26.6 μm.
6. The pattern of claim 5, wherein when a sum of a width of a first line segment and a width of a first gap is less than a sum of a width of a second line segment and a width of a second gap, the width of a first line segment is between 1 and 12, the width of a first gap is between 5.5 and 24, and the width of the first gap is greater than the width of the first line segment, the width of a second line segment is between 1.8 and 12.8 microns, the width of a second gap is between 6.3 and 24.8 microns, and the width of the second gap is greater than the width of the second line segment.
7. The pattern of claim 1, wherein the sum of the width of a third line segment and the width of a third gap is greater than or less than the sum of the width of a fourth line segment and the width of a fourth gap.
8. The pattern of claim 7, wherein when a sum of a width of a third line segment and a width of a third gap is greater than a sum of a width of a fourth line segment and a width of a fourth gap, the sum of the width of a third line segment and the width of a third gap is between 11.6 and 26.6 micrometers, and the sum of the width of a fourth line segment and the width of a fourth gap is between 10 and 25 micrometers.
9. The pattern of claim 8, wherein when a sum of a width of a third line segment and a width of a third gap is greater than a sum of a width of a fourth line segment and a width of a fourth gap, a width of a third line segment is between 1.8 and 12.8, a width of a third gap is between 6.3 and 24.8, and the width of the third gap is greater than the width of the third line segment, a width of a fourth line segment is between 1 and 12 microns, a width of a fourth gap is between 5.5 and 24 microns, and the width of the fourth gap is greater than the width of the fourth line segment.
10. The pattern of claim 7, wherein when a sum of a width of a third line segment and a width of a third gap is less than a sum of a width of a fourth line segment and a width of a fourth gap, the sum of the width of a third line segment and the width of a third gap is between 10-25 μm, and the sum of the width of a fourth line segment and the width of a fourth gap is between 11.6-26.6 μm.
11. The pattern of claim 10, wherein when a sum of a width of a third line segment and a width of a third gap is less than a sum of a width of a fourth line segment and a width of a fourth gap, a width of a third line segment is between 1 and 12, a width of a third gap is between 5.5 and 24, and the width of the third gap is greater than the width of the third line segment, a width of a fourth line segment is between 1.8 and 12.8 micrometers, a width of a fourth gap is between 6.3 and 24.8 micrometers, and the width of the fourth gap is greater than the width of the fourth line segment.
12. The fiducial mark pattern of claim 1, further comprising a cross-shaped pattern disposed between the first region and the second region, and between the third region and the fourth region.
13. The fiducial mark pattern of claim 12, wherein the cross-shaped pattern comprises a fifth line segment and a sixth line segment, the fifth line segment being perpendicular to the sixth line segment.
14. The fiducial mark pattern of claim 13, wherein the widths of the fifth and sixth line segments are between 3-17 microns.
15. The fiducial mark pattern of claim 13, wherein the lengths of the fifth and sixth line segments are between 50-100 microns.
16. A wafer structure, comprising:
a chip having a plurality of mark regions;
a material layer formed on the wafer;
the pattern of alignment marks of claim 1, disposed on the material layer within the plurality of mark regions of the wafer.
17. The wafer structure of claim 16 wherein the plurality of marker regions are adjacent an edge of the wafer.
18. The wafer structure of claim 16, wherein the layer of material comprises an epitaxial layer.
19. The wafer structure of claim 16, wherein the layer of material has a thickness of between 6-10 microns.
20. The wafer structure of claim 16, wherein the plurality of fiducial mark patterns are disposed opposite each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910148762.9A CN111627887A (en) | 2019-02-28 | 2019-02-28 | Alignment mark pattern and chip structure comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910148762.9A CN111627887A (en) | 2019-02-28 | 2019-02-28 | Alignment mark pattern and chip structure comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111627887A true CN111627887A (en) | 2020-09-04 |
Family
ID=72261151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910148762.9A Pending CN111627887A (en) | 2019-02-28 | 2019-02-28 | Alignment mark pattern and chip structure comprising same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111627887A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11899376B1 (en) | 2022-08-31 | 2024-02-13 | Applied Materials, Inc. | Methods for forming alignment marks |
| WO2024039485A1 (en) * | 2022-08-19 | 2024-02-22 | Intel Corporation | Integrated circuit device with electrically active fiducials |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| US5700732A (en) * | 1996-08-02 | 1997-12-23 | Micron Technology, Inc. | Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns |
| US5910847A (en) * | 1996-02-15 | 1999-06-08 | U.S. Philips Corporation | Method of determining the radiation dose in a lithographic apparatus |
| US6037671A (en) * | 1998-11-03 | 2000-03-14 | Advanced Micro Devices, Inc. | Stepper alignment mark structure for maintaining alignment integrity |
| US20050254030A1 (en) * | 2004-05-14 | 2005-11-17 | Asml Netherlands B.V. | Alignment system and method and device manufactured thereby |
| CN103019052A (en) * | 2011-09-23 | 2013-04-03 | 中芯国际集成电路制造(北京)有限公司 | Lithography alignment mark, and mask plate and semiconductor chip containing the same |
-
2019
- 2019-02-28 CN CN201910148762.9A patent/CN111627887A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| US5910847A (en) * | 1996-02-15 | 1999-06-08 | U.S. Philips Corporation | Method of determining the radiation dose in a lithographic apparatus |
| US5700732A (en) * | 1996-08-02 | 1997-12-23 | Micron Technology, Inc. | Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns |
| US6037671A (en) * | 1998-11-03 | 2000-03-14 | Advanced Micro Devices, Inc. | Stepper alignment mark structure for maintaining alignment integrity |
| US20050254030A1 (en) * | 2004-05-14 | 2005-11-17 | Asml Netherlands B.V. | Alignment system and method and device manufactured thereby |
| CN103019052A (en) * | 2011-09-23 | 2013-04-03 | 中芯国际集成电路制造(北京)有限公司 | Lithography alignment mark, and mask plate and semiconductor chip containing the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024039485A1 (en) * | 2022-08-19 | 2024-02-22 | Intel Corporation | Integrated circuit device with electrically active fiducials |
| US11899376B1 (en) | 2022-08-31 | 2024-02-13 | Applied Materials, Inc. | Methods for forming alignment marks |
| WO2024049754A1 (en) * | 2022-08-31 | 2024-03-07 | Applied Materials, Inc. | Methods for forming alignment marks |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8026044B2 (en) | Method of forming fine patterns of semiconductor device | |
| CN111627887A (en) | Alignment mark pattern and chip structure comprising same | |
| DE102008049059A1 (en) | A wafer and a method of dicing a wafer | |
| DE102014118950B4 (en) | Staggered via redistribution layer for a wafer level package and process for its manufacture | |
| US20110287630A1 (en) | Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks | |
| DE102006024735A1 (en) | Hard mask layer stack and method of patterning a layer using the hard mask layer stack | |
| US20190165127A1 (en) | Semiconductor device | |
| DE102005033916A1 (en) | Orientation of an MTJ stack of traces in the absence of topography | |
| KR101460697B1 (en) | Fabricating method of semiconductor integrated circuit devices | |
| DE102011003843A1 (en) | SiC semiconductor device and method for its production | |
| KR20010112104A (en) | Semiconductor device and method of manufacturing the same | |
| KR100699860B1 (en) | Method for fabricating align key during well structure formation process and method for fabricating isolation structure using the same | |
| US9006911B2 (en) | Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads | |
| US6881649B2 (en) | Method of making device chips collectively from common material substrate | |
| DE102008008085A1 (en) | Semiconductor component, has intermediate layer dielectric arranged on mask structure, and conductive structure provided in opening, which is electrically connected with another conductive structure | |
| DE102017119047B4 (en) | METHOD OF MANUFACTURING MONOLITHIC THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS | |
| DE102010042383B4 (en) | Semiconductor device and method for its production | |
| KR20010083217A (en) | Alignment mark set and method of measuring alignment accuracy | |
| CN111403389A (en) | Three-dimensional memory device structure and forming method | |
| EP1540712B1 (en) | Method for production of a semiconductor structure | |
| US6259164B1 (en) | Offset alignment marks method and apparatus | |
| DE102008037947B4 (en) | Method for producing an element wafer and an element | |
| TWI716821B (en) | Wafer structures | |
| US8551690B2 (en) | Methods of forming patterns | |
| US7981574B2 (en) | Reticle, and method of laying out wirings and vias |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200904 |