TWI713168B - Chip package structure and manufacturing method thereof - Google Patents
Chip package structure and manufacturing method thereof Download PDFInfo
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- TWI713168B TWI713168B TW109107584A TW109107584A TWI713168B TW I713168 B TWI713168 B TW I713168B TW 109107584 A TW109107584 A TW 109107584A TW 109107584 A TW109107584 A TW 109107584A TW I713168 B TWI713168 B TW I713168B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 61
- 239000012790 adhesive layer Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
本發明是有關於一種封裝結構及其製造方法,且特別是有關於一種晶片封裝結構及其製造方法。The present invention relates to a package structure and a manufacturing method thereof, and particularly relates to a chip package structure and a manufacturing method thereof.
在多晶片封裝結構(Multi-Chip Package, MCP)中,將複數個晶片縱向堆疊以節省封裝尺寸已經是相當成熟的技術。然而,在多晶片封裝結構中,位於基板上底層的元件很容易在後續堆疊的過程中產生位移甚至與基板分離的情況,進而影響封裝良率。因此,如何有效地降低基板上底層的元件在後續堆疊其他電子元件的過程中產生位移甚至與基板分離的情況,以提升封裝良率,便成為當前亟待解決的問題之一。In the Multi-Chip Package (MCP), stacking multiple chips vertically to save package size is already a mature technology. However, in the multi-chip package structure, the components on the bottom layer on the substrate are likely to be displaced or even separated from the substrate during the subsequent stacking process, thereby affecting the package yield. Therefore, how to effectively reduce the displacement or even separation of the components on the bottom layer of the substrate during the subsequent stacking of other electronic components to improve the packaging yield has become one of the problems to be solved urgently.
本發明晶片封裝結構及其製造方法,其可以有效地降低線路基板上多個導電連接件與第一晶片在後續堆疊其他電子元件的過程中產生位移甚至與線路基板分離的情況且可以降低多個導電連接件因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構的良率。The chip packaging structure and the manufacturing method thereof of the present invention can effectively reduce the displacement or even the separation of the multiple conductive connectors on the circuit substrate and the first chip during the subsequent stacking of other electronic components, and can reduce multiple The probability that the conductive connectors will contact each other and be electrically short-circuited due to displacement, so as to improve the yield of the chip package structure.
本發明提供一種晶片封裝結構,包括線路基板、多個導電連接件、第一晶片以及兩階段熱固性膠層。線路基板具有第一表面與相對於第一表面的第二表面。多個導電連接件位於第一表面上。多個導電連接件電性連接線路基板。第一晶片具有主動面、相對於主動面的背面以及主動面上的多個導電部。第一晶片以背面配置於第一表面上。兩階段熱固性膠層包封多個導電連接件與第一晶片,並於同一平面上共同露出部分的多個導電連接件及第一晶片之多個導電部。The invention provides a chip packaging structure, which includes a circuit substrate, a plurality of conductive connectors, a first chip and a two-stage thermosetting adhesive layer. The circuit substrate has a first surface and a second surface opposite to the first surface. A plurality of conductive connections are located on the first surface. A plurality of conductive connectors are electrically connected to the circuit substrate. The first chip has an active surface, a back surface opposite to the active surface, and a plurality of conductive parts on the active surface. The first wafer is configured on the first surface with a back surface. The two-stage thermosetting adhesive layer encapsulates the plurality of conductive connectors and the first chip, and jointly exposes part of the plurality of conductive connectors and the plurality of conductive parts of the first chip on the same plane.
本發明提供一種晶片封裝結構的製造方法,包括提供線路基板,其中線路基板具有第一表面與相對於第一表面的第二表面。形成多個導電連接件於第一表面上,其中多個導電連接件電性連接所線路基板。形成兩階段熱固性膠層,以包封多個導電連接件。配置第一晶片於第一表面上且嵌入兩階段熱固性膠層,其中第一晶片具有主動面、相對於主動面的背面以及主動面上的多個導電部。進行加熱製程以使兩階段熱固性膠層完全固化。The present invention provides a method for manufacturing a chip package structure, including providing a circuit substrate, wherein the circuit substrate has a first surface and a second surface opposite to the first surface. A plurality of conductive connecting members are formed on the first surface, wherein the plurality of conductive connecting members are electrically connected to the circuit substrate. A two-stage thermosetting adhesive layer is formed to encapsulate multiple conductive connections. A first chip is arranged on the first surface and embedded with a two-stage thermosetting adhesive layer, wherein the first chip has an active surface, a back surface opposite to the active surface, and a plurality of conductive parts on the active surface. A heating process is performed to completely cure the two-stage thermosetting adhesive layer.
基於上述,本發明的晶片封裝結構由於先使用兩階段熱固性膠層包封多個導電連接件與第一晶片,接著再進行加熱製程使兩階段熱固性膠層完全固化,以良好地保護及固定多個導電連接件與第一晶片,因此有效地降低線路基板上多個導電連接件與第一晶片在後續堆疊其他電子元件(如第二晶片與第三晶片)的過程中產生位移甚至與線路基板分離的情況且可以降低多個導電連接件因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構的良率。Based on the above, the chip package structure of the present invention first uses a two-stage thermosetting adhesive layer to encapsulate a plurality of conductive connectors and the first chip, and then performs a heating process to completely cure the two-stage thermosetting adhesive layer, so as to protect and fix the multiple layers. There are two conductive connectors and the first chip, so it effectively reduces the displacement of the multiple conductive connectors and the first chip on the circuit substrate during the subsequent stacking of other electronic components (such as the second chip and the third chip) and even the circuit substrate The separation condition can reduce the probability that a plurality of conductive connectors will contact each other due to displacement and be electrically short-circuited, so as to improve the yield of the chip package structure.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
以下將參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。相同或相似之標號表示相同或相似之元件,以下段落將不再一一贅述。Hereinafter, the present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The same or similar reference numerals indicate the same or similar elements, and the following paragraphs will not repeat them one by one.
圖1A至圖1D是依據本發明一實施例的晶片封裝結構的部分製造方法的部分剖面示意圖。請參考圖1A,首先,提供線路基板110,其中線路基板110具有第一表面110a與相對於第一表面110a的第二表面110b。線路基板110可以是印刷電路板,但本發明不限於此,只要線路基板110中具有適宜的導電線路可以進行後續所需的電性連接皆屬於本發明的保護範圍。1A to 1D are partial cross-sectional schematic diagrams of a part of a manufacturing method of a chip package structure according to an embodiment of the present invention. 1A, first, a
請繼續參考圖1A,於線路基板110的第一表面110a上形成多個導電連接件120,其中多個導電連接件120電性連接線路基板110。導電連接件120可以是焊球、電鍍凸塊、無電鍍凸塊、結線凸塊、導電聚合物凸塊或金屬複合凸塊,其中焊球可以是錫球,而凸塊的材料可以選自下列群組:錫、銅、金、銀、銦、鎳/金、鎳/鈀/金、銅/鎳/金、銅/金、鋁及其組合,但本發明不限於此。導電連接件120的形成方法可以是先藉由預塗錫膏或落球(Pick and Place)於第一表面110a上,再進行迴焊(reflow)製程,以形成導電連接件120,其中預塗錫膏可以採用印刷(printing)或電鍍(plating)的製程所製備,但本發明不限於此。Please continue to refer to FIG. 1A, a plurality of
請參考圖1B,形成導電連接件120後,形成兩階段熱固性膠層131,以包封多個導電連接件120。兩階段熱固性膠層131的頂面131a可以高於導電連接件120的頂面120a。換句話說,兩階段熱固性膠層131可以覆蓋導電連接件120,使導電連接件120不被暴露出來。另一方面,兩階段熱固性膠層131可以設置於線路基板110上,以暴露出線路基板110的側邊面積的一部分。Please refer to FIG. 1B, after the
在本實施例中,兩階段熱固性膠層131例如是半固化狀態。在此,兩階段熱固性膠層131例如是於A階時為液態(Liquid),於B階時為部分固化之半固態(Jelly),而於C階時則為完全固化之固態(Solid)的環氧樹脂。形成兩階段熱固性膠層131的方法可以包括旋轉塗佈製程或網印製程。In this embodiment, the two-stage thermosetting
請繼續參考圖1B,兩階段熱固性膠層131可以是先以液態方式塗佈於線路基板110上,再經過第一段升溫加熱製程預固化兩階段熱固性膠層131,其中加熱製程例如是升溫烘烤。預固化的兩階段熱固性膠層131可以於配置第一晶片140前進一步輔助導電連接件120暫時固定在線路基板110的第一表面110a上,但本發明不限於此。另一方面,兩階段熱固性膠層131可以位於兩相鄰的導電連接件120之間,以電性隔離兩相鄰的導電連接件120。Please continue to refer to FIG. 1B, the two-stage thermosetting
請參考圖1C,於第一表面110a上配置第一晶片140,其中第一晶片140具有主動面140a、相對於主動面140a的背面140b以及主動面140a上的多個導電部142。在本實施例中,第一晶片140以背面140b配置於第一表面110a上。換句話說,第一晶片140的主動面140a以及多個導電部142遠離線路基板110。第一晶片140可透過黏晶(die attach)製程固定於線路基板110上,在進行黏晶製程時,需先形成膠層(未繪示)於第一晶片140的背面140b,再黏附至線路基板110上,由於兩階段熱固性膠層131在此一狀態下仍為半固化膠狀,於第一晶片140進行黏晶(die attach)製程固定於線路基板110時,第一晶片140可穿透兩階段熱固性膠層131而固定於線路基板110上。其中膠層可為黏晶膠膜(DAF)或其他適當的材料,但本發明不限於此。1C, a
在本實施例中,第一晶片140嵌入兩階段熱固性膠層131。換句話說,兩階段熱固性膠層131包封第一晶片140。多個導電部142的頂面142a與導電連接件120的頂面120a可以位於同一平面。另一方面,多個導電連接件120可以環繞第一晶片140。換句話說,多個導電連接件120可以位於第一晶片140的兩側,且多個導電連接件120於線路基板110上的正投影與第一晶片140於線路基板110上的正投影不重疊。In this embodiment, the
在本實施例中,當兩階段熱固性膠層131經過第一段升溫加熱製程預固化,則可以進行第二段升溫加熱製程,以使在配置第一晶片140於第一表面110a上的過程中兩階段熱固性膠層131為糊狀,多個導電部142可以完全埋入兩階段熱固性膠層131。因此,兩階段熱固性膠層131的頂面131a可以高於導電部142的頂面142a。換句話說,兩階段熱固性膠層131可以覆蓋導電部142,使導電部142的頂面142a不被暴露出來。In this embodiment, when the two-stage thermosetting
請參考圖1D,配置第一晶片140後,進行加熱製程以使兩階段熱固性膠層131完全固化。也就是說,配置第一晶片140後,可以對半固化的兩階段熱固性膠層131進行加熱製程,使半固化的兩階段熱固性膠層131變為完全固化的兩階段熱固性膠層130。接著,對兩階段熱固性膠層130的頂面130a進行平坦化製程,以暴露出多個導電部142與多個導電連接件120,換句話說,進行平坦化製程後,於同一平面(兩階段熱固性膠層130的頂面130a)上共同露出部分的多個導電連接件120及第一晶片140之多個導電部142,使導電部142與導電連接件120可以電性連接至其他電子元件。平坦化製程例如是機械研磨製程(mechanical grinding process)、化學機械研磨製程(chemical-mechanical polishing, CMP)或其他適宜的製程或其組合。經過上述製程後即可大致上完成本實施例之晶片封裝結構100的製作。Please refer to FIG. 1D. After the
在本實施例中,由於先使用兩階段熱固性膠層131包封多個導電連接件120與第一晶片140,接著再進行加熱製程使兩階段熱固性膠層131完全固化,以良好地保護及固定多個導電連接件120與第一晶片140,因此有效地降低線路基板110上多個導電連接件120與第一晶片140在後續堆疊其他電子元件的過程中產生位移甚至與線路基板分離的情況且可以降低多個導電連接件120因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構100的良率。In this embodiment, the two-stage thermosetting
在此必須說明的是,以下實施例沿用上述實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the component numbers and part of the content of the above embodiments, wherein the same or similar reference numbers are used to represent the same or similar components, and the description of the same technical content is omitted, and the description of the omitted parts is omitted. Reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖2是依據本發明另一實施例的晶片封裝結構的部分剖面示意圖。請參考圖2,圖2的晶片封裝結構100a與圖1D中的晶片封裝結構100差別在於:在進行圖1D的平坦化製程之後可以覆晶接合第二晶片150於兩階段熱固性膠層130上,且與第一晶片140以及線路基板110電性連接。舉例而言,第二晶片150的主動面150a面向第一晶片140,第二晶片150藉由多個導電部142與第一晶片140電性連接,且藉由多個導電連接件120與線路基板110電性連接。在一實施例中,第二晶片150上具有多個焊球152,其中部分焊球152對應多個導電部142,另一部分焊球152對應多個導電連接件120。2 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention. Please refer to FIG. 2. The difference between the
由於兩階段熱固性膠層130良好地保護及固定多個導電連接件120與第一晶片140,因此在接合第二晶片150的過程中,可以有效地降低線路基板110上多個導電連接件120與第一晶片140產生位移甚至與線路基板分離的情況且可以降低多個導電連接件120因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構100a的良率。Since the two-stage thermosetting
圖3是依據本發明又一實施例的晶片封裝結構的部分剖面示意圖。請參考圖3,圖3的晶片封裝結構100b與圖2中的晶片封裝結構100a差別在於:配置第二晶片150後可以形成封裝膠體160以包封兩階段熱固性膠層130與第二晶片150,且可以形成多個錫球170於第二表面110b上且電性連接線路基板110。在本實施例中,封裝膠體160的尺寸可以是大於兩階段熱固性膠層130的尺寸,換句話說,部分封裝膠體160可以位於兩階段熱固性膠層130兩側的線路基板110上。然而,本發明不限於此,在其他未繪示的實施例中,封裝膠體160的尺寸實質上可以等於兩階段熱固性膠層130的尺寸,而暴露出線路基板110的側邊面積。由於封裝膠體160包封兩階段熱固性膠層130與第二晶片150可以防止水氣或外界異物入侵,進而對晶片封裝結構100b造成影響,例如鏽蝕、短路或功能失常等,以進一步提升晶片封裝結構100b的良率。3 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention. Please refer to FIG. 3, the difference between the
另一方面,如圖3所示,多個錫球170可以是全面佈植於線路基板110的第二表面110b上,換句話說,多個錫球170可以佈植於線路基板110的中心及兩側,以增加晶片封裝結構100b對外的電性接點,且晶片封裝結構100b可以藉由多個錫球170電性連接至其他封裝體(未繪示),以進一步增加晶片封裝結構100b的功能性。On the other hand, as shown in FIG. 3, a plurality of
圖4是依據本發明再一實施例的晶片封裝結構的部分剖面示意圖。請參考圖4,圖4的晶片封裝結構100c與圖3中的晶片封裝結構100b差別在於:形成封裝膠體160前可以堆疊接合第三晶片180於第二晶片150上,並以打線接合於缐路基板110上。換句話說,第三晶片180以面朝上的方式堆疊接合於第二晶片150上,第三晶片180的主動面180a遠離第二晶片150。舉例而言,如圖4所示,導線可以連接位於第三晶片180的主動面180a的接墊(未繪示)與缐路基板110的第一表面110a上的接墊,其中上述導線的連接方式可視實際製程需求而調整。另一方面,封裝膠體160可以包封兩階段熱固性膠層130、第二晶片150與第三晶片180。4 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention. Please refer to FIG. 4, the difference between the
由於兩階段熱固性膠層130良好地保護及固定多個導電連接件120與第一晶片140,因此在接合第二晶片150與第三晶片180的過程中,可以有效地降低線路基板110上多個導電連接件120與第一晶片140產生位移甚至與線路基板分離的情況,且可以降低多個導電連接件120因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構100c的良率。應說明的是,本發明不限制第一晶片140、第二晶片150以及第三晶片180的種類,可視實際設計需求而定。Since the two-stage thermosetting
綜上所述,本發明的晶片封裝結構由於先使用兩階段熱固性膠層包封多個導電連接件與第一晶片,接著再進行加熱製程使兩階段熱固性膠層完全固化,以良好地保護及固定多個導電連接件與第一晶片,因此有效地降低線路基板上多個導電連接件與第一晶片在後續堆疊其他電子元件(如第二晶片與第三晶片)的過程中產生位移甚至與線路基板分離的情況且可以降低多個導電連接件因產生位移而相互接觸電性短路的機率,以提升晶片封裝結構的良率。此外,多個錫球可以是全面佈植於線路基板的第二表面上,以增加晶片封裝結構對外的電性接點,且可以進一步增加晶片封裝結構的功能性。To sum up, the chip package structure of the present invention first uses a two-stage thermosetting adhesive layer to encapsulate a plurality of conductive connectors and the first chip, and then performs a heating process to completely cure the two-stage thermosetting adhesive layer to provide good protection and Fixing the plurality of conductive connectors and the first chip, thus effectively reducing the displacement or even the difference between the plurality of conductive connectors and the first chip on the circuit substrate during the subsequent stacking of other electronic components (such as the second chip and the third chip) The separation of the circuit substrate can reduce the probability of a plurality of conductive connectors contacting each other due to displacement and electrical short circuit, so as to improve the yield of the chip package structure. In addition, a plurality of solder balls may be fully planted on the second surface of the circuit substrate to increase the external electrical contacts of the chip package structure and further increase the functionality of the chip package structure.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
100、100a、100b、100c:晶片封裝結構
110:線路基板
110a:第一表面
110b:第二表面
120:導電連接件
120a、130a、131a、142a:頂面
130、131:兩階段熱固性膠層
140:第一晶片
140a、150a、180a:主動面
140b:背面
142:導電部
150:第二晶片
152:焊球
160:封裝膠體
170:錫球
180:第三晶片100, 100a, 100b, 100c: chip package structure
110:
圖1A至圖1D是依據本發明一實施例的晶片封裝結構的部分製造方法的部分剖面示意圖。 圖2是依據本發明另一實施例的晶片封裝結構的部分剖面示意圖。 圖3是依據本發明又一實施例的晶片封裝結構的部分剖面示意圖。 圖4是依據本發明再一實施例的晶片封裝結構的部分剖面示意圖。 1A to 1D are partial cross-sectional schematic diagrams of a part of a manufacturing method of a chip package structure according to an embodiment of the present invention. 2 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention. 3 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention. 4 is a schematic partial cross-sectional view of a chip package structure according to another embodiment of the invention.
100:晶片封裝結構 100: Chip package structure
110:線路基板 110: circuit board
110a:第一表面 110a: first surface
110b:第二表面 110b: second surface
120:導電連接件 120: Conductive connector
130:兩階段熱固性膠層 130: Two-stage thermosetting adhesive layer
130a:頂面 130a: top surface
140:第一晶片 140: The first chip
140a:主動面 140a: active side
142:導電部 142: Conductive part
Claims (13)
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US20070126097A1 (en) * | 2005-12-07 | 2007-06-07 | Chun-Hung Lin | Chip package structure |
TW201029136A (en) * | 2008-11-25 | 2010-08-01 | Sumitomo Bakelite Co | Electronic component package and method for producing the same |
TW201312669A (en) * | 2011-09-14 | 2013-03-16 | Chipmos Technologies Inc | Chip package structure and method for manufacturing the same |
CN104471692A (en) * | 2012-07-17 | 2015-03-25 | 日东电工株式会社 | Sealing layer-coated semiconductor and production method for semiconductor device |
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WO2014107848A1 (en) * | 2013-01-09 | 2014-07-17 | Sandisk Semiconductor (Shanghai) Co., Ltd. | Semiconductor device including independent film layer for embedding and/or spacing semiconductor die |
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US20070126097A1 (en) * | 2005-12-07 | 2007-06-07 | Chun-Hung Lin | Chip package structure |
TW201029136A (en) * | 2008-11-25 | 2010-08-01 | Sumitomo Bakelite Co | Electronic component package and method for producing the same |
TW201312669A (en) * | 2011-09-14 | 2013-03-16 | Chipmos Technologies Inc | Chip package structure and method for manufacturing the same |
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