TWI710649B - Photomask and method of manufacturing a display device - Google Patents

Photomask and method of manufacturing a display device Download PDF

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TWI710649B
TWI710649B TW109109081A TW109109081A TWI710649B TW I710649 B TWI710649 B TW I710649B TW 109109081 A TW109109081 A TW 109109081A TW 109109081 A TW109109081 A TW 109109081A TW I710649 B TWI710649 B TW I710649B
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pattern
light
photomask
transfer
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TW202030346A (en
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三好将之
一之瀬敬
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

To provide a photomask repairing method capable of efficiently repairing a defect caused in a transfer pattern under a stable condition to recover a transferability of the transfer pattern and a repaired photomask obtained by the method. A method of repairing a photomask having a transfer pattern which is formed on a transparent substrate is provided. The transfer pattern has a main pattern formed by a light transmitting portion and having a diameter Wl (μm), an auxiliary pattern located in the vicinity of the main pattern and having a width d (μm) which is not resolved by an exposure apparatus, and a light-shielding portion constituting a region except the main pattern and the auxiliary pattern. The light-shielding portion is obtained by forming at least a light-shielding film on the transparent substrate. The auxiliary pattern has a transmittance T (%) with respect to light of a representative wavelength in exposure light and surrounds the main pattern via the light-shielding portion. When a white defect is caused to occur in the auxiliary pattern and is not greater than 1/8 of an area of the auxiliary pattern, a light-shielding supplemental film is formed on a white defect portion.

Description

光罩及顯示裝置之製造方法Manufacturing method of photomask and display device

本發明係關於一種有利地用於以液晶顯示器或有機EL(Electro Luminescence，電致發光)顯示器為代表之顯示裝置之製造之光罩之修正(修復)方法及藉由該方法獲得之光罩、光罩之製造方法以及顯示裝置之製造方法。The present invention relates to a method for correcting (repairing) a photomask advantageously used in the manufacture of display devices represented by liquid crystal displays or organic EL (Electro Luminescence) displays, and the photomask obtained by the method, Manufacturing method of photomask and manufacturing method of display device.

於專利文獻1中記載有一種光罩，其係具備藉由將成膜於透明基板上之半透光膜及低透光膜分別圖案化而形成之轉印用圖案者，上述半透光膜使處於i光線～g光線之波長範圍之代表波長之光偏移大致180度，並且具有相對於上述代表波長之光之透過率T(%)，上述低透光膜相對於上述代表波長之光，具有較上述半透光膜之透過率T(%)低之透過率T2(%)，上述轉印用圖案具有：直徑W1(μm)之主圖案，其包含上述透明基板露出之透光部；寬度d(μm)之輔助圖案，其配置於上述主圖案之附近，且包含在上述透明基板上形成有上述半透光膜之半透光部；及低透光部，其配置於上述轉印用圖案中形成上述主圖案及上述輔助圖案之區域以外之區域，且於上述透明基板上至少形成有上述低透光膜。 [先前技術文獻] [專利文獻] Patent Document 1 describes a photomask, which is provided with a pattern for transfer formed by patterning a semi-transmissive film and a low-transmissive film formed on a transparent substrate. The semi-transparent film The light of the representative wavelength in the wavelength range of i-ray to g-ray is shifted by approximately 180 degrees, and has a transmittance T (%) relative to the light of the above-mentioned representative wavelength. The low-transmittance film is relative to the light of the above-mentioned representative wavelength , Has a transmittance T2(%) lower than the transmittance T(%) of the semi-transparent film, the transfer pattern has a main pattern with a diameter of W1 (μm), which includes the transparent portion exposed by the transparent substrate Auxiliary pattern of width d (μm), which is arranged near the main pattern, and includes a semi-transmissive portion on which the translucent film is formed on the transparent substrate; and a low-transmissive portion, which is arranged in the above-mentioned turn In the printing pattern, an area other than the area where the main pattern and the auxiliary pattern are formed, and at least the low light-transmitting film is formed on the transparent substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2016-024264號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-024264

[發明所欲解決之問題][The problem to be solved by the invention]

目前，於包含液晶顯示裝置或EL顯示裝置等之顯示裝置中，期望更明亮、且省電力，並且高精細、高速顯示、廣視角等顯示性能之提高。At present, in display devices including liquid crystal display devices or EL display devices, it is desired to improve display performance such as brighter, power saving, and high-definition, high-speed display, and wide viewing angle.

例如，就用於上述顯示裝置之薄膜電晶體(Thin Film Transistor：TFT)而言，構成TFT之複數個圖案中形成於層間絕緣膜之接觸孔若不具有確實地使上層及下層之圖案連接之作用則無法保證正確之動作。另一方面，例如，為了儘量增大液晶顯示裝置之開口率，形成為明亮且省電力之顯示裝置，要求接觸孔之直徑充分小等，伴隨顯示裝置之高密度化之要求，期望孔圖案之直徑亦微細化(例如未達3 μm)。例如，需要直徑為0.8 μm以上且2.5 μm以下之孔圖案，進而，需要直徑為2.0 μm以下之孔圖案，具體而言，具有0.8～1.8 μm之直徑之圖案之形成亦成為課題。For example, in the case of thin film transistors (TFTs) used in the above-mentioned display devices, if the contact holes formed in the interlayer insulating film in the plural patterns constituting the TFT do not have a pattern to connect the upper and lower layers reliably The function cannot guarantee correct action. On the other hand, for example, in order to maximize the aperture ratio of the liquid crystal display device to form a bright and power-saving display device, the diameter of the contact hole is required to be sufficiently small. With the demand for higher density of the display device, it is desirable to have a better hole pattern. The diameter is also miniaturized (for example, less than 3 μm). For example, a hole pattern with a diameter of 0.8 μm or more and 2.5 μm or less is required, and a hole pattern with a diameter of 2.0 μm or less is required. Specifically, the formation of a pattern having a diameter of 0.8 to 1.8 μm is also a problem.

且說，於與顯示裝置相比，積體度較高，圖案之微細化明顯進展之半導體裝置(LSI(Large Scale Integration，大型積體電路))製造用光罩之領域中，為了獲得較高之解像性，而曝光裝置應用較高之數值孔徑NA(numerical aperture)(例如超過0.2)之光學系統，存在推進了曝光之光之短波長化之經過。其結果，於該領域中，多使用KrF或ArF之準分子雷射(分別為248 nm、193 nm之單一波長)。In addition, in the field of semiconductor device (Large Scale Integration, large integrated circuit) manufacturing photomasks, which have a higher degree of integration than display devices, and where the miniaturization of patterns has progressed significantly, in order to obtain higher Resolvability, and the exposure device uses a relatively high numerical aperture (NA) (for example, more than 0.2) optical system, which has promoted the shortening of exposure light. As a result, in this field, KrF or ArF excimer lasers (single wavelengths of 248 nm and 193 nm, respectively) are often used.

另一方面，於顯示裝置製造用之微影術領域中，為了提高解像性，應用如上所述之方法並不普遍。例如，該領域中所使用之曝光裝置所具有之光學系統之NA(數值孔徑)為0.08～0.15左右。又，曝光光源亦多使用i光線、h光線、或g光線，藉由使用主要包含該等之寬波長光源，而獲得用以照射大面積(例如，一邊為300～2000 mm之四邊形)之光量，重視生產效率或成本之傾向較強。On the other hand, in the field of lithography for manufacturing display devices, in order to improve the resolution, it is not common to apply the methods described above. For example, the NA (numerical aperture) of the optical system of the exposure apparatus used in this field is about 0.08 to 0.15. In addition, exposure light sources often use i-ray, h-ray, or g-ray. By using a wide-wavelength light source mainly containing these, the amount of light used to illuminate a large area (for example, a quadrilateral with a side of 300 to 2000 mm) is obtained. , The tendency to attach importance to production efficiency or cost is strong.

然而，於顯示裝置之製造中，如上所述圖案之微細化要求亦變高。此處，將半導體裝置製造用之技術直接應用於顯示裝置之製造存在若干問題。例如，向具有高NA(數值孔徑)之高解像度之曝光裝置轉變需要較大之設備投資，無法獲得與顯示裝置之價格之整合性。又，關於曝光波長之變更(以單一波長使用ArF準分子雷射之類之短波長)，若應用於具有大面積之顯示裝置，則除了生產效率降低以外，還因仍然需要相當之設備投資之方面而不妥。即，一方面追求先前沒有之圖案之微細化，而另一方面，不能喪失作為現有之優點之成本或效率之方面成為顯示裝置製造用光罩之問題點。However, in the manufacture of display devices, the requirements for miniaturization of patterns as described above have also become higher. Here, there are several problems in directly applying the technology used in the manufacture of semiconductor devices to the manufacture of display devices. For example, the transition to a high-resolution exposure device with a high NA (numerical aperture) requires a large investment in equipment, and cannot be integrated with the price of the display device. Also, regarding the change of exposure wavelength (using a short wavelength such as ArF excimer laser with a single wavelength), if it is applied to a display device with a large area, in addition to lowering the production efficiency, it still requires considerable equipment investment. The aspect is improper. That is, on the one hand, the pursuit of miniaturization of patterns that was not available before, and on the other hand, the problem of not losing cost or efficiency, which is the existing advantage, has become a problem for the mask for manufacturing display devices.

另一方面，於專利文獻1中記載有一種光罩，其具有包含透光部之主圖案、配置於其附近之包含相位偏移部之輔助圖案、及形成於其等以外之區域之低透光部。該光罩可對透過主圖案與輔助圖案之兩者之曝光之光之相互干涉進行控制，大幅度地改善透過光之空間圖像。而且，該光罩可於在顯示面板基板等被轉印體上穩定地形成微細之孤立孔圖案時等有利地利用。On the other hand, Patent Document 1 describes a photomask having a main pattern including a light-transmitting portion, an auxiliary pattern including a phase shift portion disposed near the main pattern, and a low-transmitting area formed in a region other than the main pattern. Guangbe. The mask can control the mutual interference of the exposed light that passes through the main pattern and the auxiliary pattern, and greatly improves the spatial image of the transmitted light. Furthermore, the photomask can be advantageously used when forming a fine isolated hole pattern stably on a transfer target body such as a display panel substrate.

如專利文獻1中所記載般，相對於主圖案而於被轉印體上直接配置不解像之適當之設計之輔助圖案於提高主圖案之轉印性時有效。但，輔助圖案為精緻地設計之微細圖案，於其位置產生缺陷之情形時之應對措施成為課題。As described in Patent Document 1, directly arranging an indistinguishable and appropriately designed auxiliary pattern on the transfer target body with respect to the main pattern is effective in improving the transferability of the main pattern. However, the auxiliary pattern is a delicately designed fine pattern, and the countermeasures when a defect occurs in its position become a problem.

一般而言，於光罩之製造過程中，使圖案缺陷之產生為零極其困難。例如，因不需要之膜之殘留或異物(顆粒)之混入等所致之多餘缺陷(亦稱為黑缺陷)、或因必需之膜之缺失所致之缺失缺陷(亦稱為白缺陷)之產生於現實中無法避免。設想此種情形，設置利用檢查檢測該等缺陷並藉由修正裝置修正(修復)缺陷之步驟。關於修正之方法，一般地，針對白缺陷，使修正膜堆積，針對黑缺陷，將多餘部分藉由能量線之照射而去除，根據需要使修正膜堆積。主要可藉由FIB(Focused Ion Beam，聚焦離子束)裝置、或雷射CVD(Chemical Vapor Deposition，化學氣相沈積)裝置而修正白缺陷、及黑缺陷。Generally speaking, it is extremely difficult to zero pattern defects during the manufacturing process of the photomask. For example, redundant defects (also called black defects) caused by residues of unnecessary films or mixing of foreign matter (particles), or missing defects (also called white defects) caused by the lack of necessary films Produced in reality cannot be avoided. Assuming such a situation, set up the steps of detecting these defects by inspection and correcting (repairing) the defects by the correction device. Regarding the correction method, generally, for white defects, a correction film is deposited, for black defects, the excess part is removed by irradiation with energy rays, and the correction film is deposited as needed. The white defects and black defects can be corrected mainly by FIB (Focused Ion Beam) equipment or laser CVD (Chemical Vapor Deposition) equipment.

例如，以於雷射CVD裝置中對光罩中產生之缺陷進行修正膜之形成之情形為例進行說明。首先，藉由檢查裝置檢測缺陷，決定進行修正膜之形成之對象部分。形成修正膜之對象為光罩所具有之轉印用圖案之遮光膜或半透光膜(以下，亦分別稱為正常之遮光膜、正常之半透光膜)中所產生之白缺陷、或者因將黑缺陷去除而形成之白缺陷等。針對該修正對象部分，藉由雷射CVD法，形成局部性的修正膜(亦稱為CVD膜)。For example, the description will be given by taking the case of forming a correction film for defects generated in a photomask in a laser CVD apparatus as an example. First, the defect is detected by the inspection device, and the target part of the correction film is determined. The object of forming the correction film is the white defect generated in the light-shielding film or semi-transmissive film (hereinafter, also referred to as normal light-shielding film and normal semi-transmissive film) of the transfer pattern of the mask, or White defects etc. formed by removing black defects. For this correction target portion, a local correction film (also referred to as a CVD film) is formed by the laser CVD method.

此時，於光罩表面，供給成為修正膜之原料之原料氣體，形成原料氣體環境。作為修正膜之原料，較佳地使用金屬羰基化合物。具體而言，例示鉻羰基化合物(Cr(CO) 6)、鉬羰基化合物(Mo(CO) 6)、鎢羰基化合物(W(CO) 6)等。作為光罩之修正膜，較佳地使用耐藥性較高之鉻羰基化合物。 At this time, the raw material gas used as the raw material of the correction film is supplied to the surface of the mask to form a raw material gas environment. As the raw material of the correction film, a metal carbonyl compound is preferably used. Specifically, a chromium carbonyl compound (Cr(CO) 6 ), a molybdenum carbonyl compound (Mo(CO) 6 ), a tungsten carbonyl compound (W(CO) 6 ), etc. are exemplified. As the correction film of the photomask, a chromium carbonyl compound with higher chemical resistance is preferably used.

於修正膜之原料使用鉻羰基化合物之情形時，例如，將六羰基鉻(Cr(CO) 6)加熱使之昇華，將其與載氣(Ar氣體等)一起導入至光罩之修正對象部分。向該原料氣體環境中照射雷射光，藉由雷射之熱/光能反應，而原料氣體分解，使產物堆積於修正對象部分，故而形成以鉻為主材料之修正膜。 When chromium carbonyl compound is used as the raw material of the correction film, for example, chromium hexacarbonyl (Cr(CO) 6 ) is heated to sublime, and it is introduced into the correction target part of the mask together with carrier gas (Ar gas, etc.) . The laser light is irradiated into the raw material gas environment, and the raw material gas is decomposed by the heat/light energy reaction of the laser, and the product is accumulated in the correction target part, so a correction film mainly made of chromium is formed.

且說，根據本發明者等人之研究，即便使用上述方法，亦會根據圖案之形狀或尺寸、或者其功能種類，產生無法一律進行如上所述之修正之問題。Moreover, according to the research conducted by the inventors, even if the above method is used, there will be a problem that the above-mentioned correction cannot be made uniformly depending on the shape or size of the pattern, or the type of its function.

例如，於遮光膜中產生之缺陷形成CVD膜之情形時，形成具有充分之遮光性之修正膜(以下，亦稱為補充膜)。另一方面，使用適當之材料之CVD膜藉由其膜厚之調整，亦可於某範圍內獲得所期望之光透過率。然而，以微細之尺寸於正確之位置以所期望之透過率(即所期望之膜厚)使均勻之修正膜堆積未必容易。又，於修正半透光膜中產生之缺陷之情形時，於形成用以設為特定之光透過率之膜厚之修正膜時，同時獲得所期望之相位特性(相對於曝光之光中所包含之波長之相位偏移量)更難。因此，具有相位偏移部之光罩之修正伴有困難。For example, when a CVD film is formed by a defect generated in a light-shielding film, a correction film with sufficient light-shielding properties (hereinafter, also referred to as a supplementary film) is formed. On the other hand, a CVD film using an appropriate material can also obtain a desired light transmittance within a certain range by adjusting its film thickness. However, it is not always easy to deposit a uniform correction film with a fine size in the correct position and a desired transmittance (ie, a desired film thickness). In addition, when correcting defects generated in a semi-transmissive film, when forming a correction film with a specific thickness of light transmittance, the desired phase characteristics (relative to the Including the phase shift of the wavelength) is more difficult. Therefore, it is difficult to correct the mask with the phase shift part.

即，對具有相位偏移部之光罩或者具有精細之(例如具有解像極限以下之尺寸之)圖案之光罩的修正由於難度較高，故容易成為降低生產效率之原因，又，於修正之過程中，產生尺寸或光學物性與目標值不同之新的缺陷之情形亦並不罕見。That is, the correction of a mask with a phase shift portion or a mask with a fine (for example, a size below the resolution limit) pattern is difficult, so it is likely to be a cause of reduced production efficiency. In the process, it is not uncommon to produce new defects whose size or optical properties are different from the target value.

於此種狀況下，為了找出即便於如上述專利文獻1記載之光罩中所例示之精細圖案產生缺陷之情形時亦實施適當之缺陷修正的方法，本發明者等人進行了銳意研究。 因此，本發明之目的在於提供一種以穩定之條件高效率地修正轉印用圖案中產生之缺陷，使因缺陷而受損之該轉印用圖案之光學功能恢復，從而使轉印性能良好的光罩之修正方法及由其形成之修正光罩。 [解決問題之技術手段] Under such circumstances, the inventors of the present invention have conducted intensive research in order to find out a method of implementing appropriate defect correction even when a defect occurs in the fine pattern illustrated in the photomask described in Patent Document 1 above. Therefore, the object of the present invention is to provide a method for efficiently correcting defects generated in a transfer pattern under stable conditions, so as to restore the optical function of the transfer pattern damaged by the defect, thereby achieving good transfer performance. Correction method of photomask and correction photomask formed by it. [Technical means to solve the problem]

(第1態樣) 本發明之第1態樣係 一種光罩之修正方法，其特徵在於，其係具備形成於透明基板上之轉印用圖案之光罩之修正方法，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 上述輔助圖案具有相對於曝光之光之代表波長之光的透過率T(%)，並且將上述主圖案之周圍介隔上述遮光部而包圍， 上述輔助圖案之透過光相對於上述主圖案之透過光，相對於上述代表波長之光之相位差為大致180度， 於上述輔助圖案產生白缺陷時，進行於上述白缺陷部分形成包含與上述遮光膜不同之材料之遮光性之補充膜的補充膜修正。 (第2態樣) 本發明之第2態樣係 如上述第1態樣之光罩之修正方法，其中上述白缺陷為上述輔助圖案之面積之1/8以下。 (第3態樣) 本發明之第3態樣係 如上述第1或第2態樣之光罩之修正方法，其特徵在於，上述補充膜修正係使因產生上述白缺陷而降低之上述轉印用圖案之光學性能至少一部分恢復者。 (第4態樣) 本發明之第4態樣係 如上述第3態樣之光罩之修正方法，其特徵在於，上述光學性能包含上述轉印用圖案之透過光於被轉印體上形成之光強度分佈中之峰高、焦點深度、及曝光裕度之任一者。 (第5態樣) 本發明之第5態樣係 如上述第1或第2態樣之光罩之修正方法，其特徵在於，上述輔助圖案係於上述透明基板上形成具有相對於上述代表波長之光之透過率T(%)並且具有使上述代表波長之光偏移大致180度之相位特性之半透光膜而成。 (第6態樣) 本發明之第6態樣係 一種光罩之修正方法，其特徵在於，其係具備形成於透明基板上之轉印用圖案之光罩之修正方法，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 上述輔助圖案具有相對於曝光之光之代表波長之光的透過率T(%)，並且將上述主圖案之周圍介隔上述遮光部而包圍， 上述輔助圖案之透過光相對於上述主圖案之透過光，相對於上述代表波長之光之相位差為大致180度，且 於上述輔助圖案產生黑缺陷時，進行將上述主圖案之寬度擴展之擴展修正。 (第7態樣) 本發明之第7態樣係 如上述第6態樣之光罩之修正方法，其特徵在於，上述擴展修正係使因產生上述黑缺陷而降低之上述轉印用圖案之光學性能至少一部分恢復者。 (第8態樣) 本發明之第8態樣係 如上述第7態樣之光罩之修正方法，其特徵在於，上述光學性能包含上述轉印用圖案之透過光於被轉印體上形成之光強度分佈之峰高、焦點深度、及曝光裕度之任一者。 (第9態樣) 本發明之第9態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述黑缺陷超過上述輔助圖案之面積之1/8。 (第10態樣) 本發明之第10態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述輔助圖案係於上述透明基板上形成具有相對於上述代表波長之光之透過率T(%)並且具有使上述代表波長之光偏移大致180度之相位特性之半透光膜而成。 (第11態樣) 本發明之第11態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述黑缺陷係因於上述輔助圖案中產生之白缺陷部分形成遮光性之補充膜而產生之黑缺陷。 (第12態樣) 本發明之第12態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，藉由上述擴展修正而增加之主圖案之面積為因上述黑缺陷而喪失之輔助圖案之面積S1的5%以下。 (第13態樣) 本發明之第13態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述擴展修正係使正方形之主圖案之4邊中至少1條邊向遮光部側後退而進行。 (第14態樣) 本發明之第14態樣係 如上述第6至第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述擴展修正係將遮光膜之邊緣藉由雷射熔斷或離子束蝕刻去除而進行。 (第15態樣) 本發明之第15態樣係 如上述第1、第2、第6、第7、及第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述輔助圖案配置於上述主圖案之附近，藉由利用透過上述輔助圖案之光使透過上述主圖案之上述曝光之光於被轉印體上形成之光強度分佈變化，而使焦點深度增加。 (第16態樣) 本發明之第16態樣係 如上述第1、第2、第6、第7、及第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述轉印用圖案滿足下述式(1)。 0.8≦W1≦4.0・・・(1) (第17態樣) 本發明之第17態樣係 如上述1、2、6、7、及8中任一態樣之光罩之修正方法，其特徵在於，上述轉印用圖案滿足下述式(2)。 0.5≦√(T/100)×d≦1.5・・・(2) (第18態樣) 本發明之第18態樣係 如上述第1、第2、第6、第7、及第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述轉印用圖案於將上述主圖案之中心與上述輔助圖案之寬度方向之中心的距離設為P(μm)時，滿足下述式(3)。 1.0＜P≦5.0・・・(3) (第19態樣) 本發明之第19態樣係 如上述第1、第2、第6、第7、及第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述輔助圖案之形狀係以上述主圖案之重心為中心之多邊形帶。 (第20態樣) 本發明之第20態樣係 如上述第1、第2、第6、第7、及第8態樣中任一態樣之光罩之修正方法，其特徵在於，上述轉印用圖案係於被轉印體上形成孔圖案者。 (第21態樣) 本發明之第21態樣係 如上述第20態樣之光罩之修正方法，其特徵在於，上述孔圖案係孤立孔圖案。 (第22態樣) 本發明之第22態樣係 一種光罩，其特徵在於，其係於透明基板上形成有轉印用圖案者，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，且包含相位偏移部，該相位偏移部係於上述透明基板上形成具有使曝光之光之代表波長之光相位偏移大致180度之相位特性並且具有相對於上述代表波長之光之透過率T(%)之半透光膜而成，且 於上述多邊形帶之區域內，形成有包含與上述遮光膜不同之材料之遮光性之補充膜。 (第23態樣) 本發明之第23態樣係 如上述第22態樣之光罩，其特徵在於，上述補充膜之形成係上述多邊形帶之面積之1/8以下。 (第24態樣) 本發明之第24態樣係 如上述第22或第23態樣之光罩，其特徵在於，於上述多邊形帶中，上述補充膜係雷射CVD膜。 (第25態樣) 本發明之第25態樣係 一種光罩，其特徵在於，其係於透明基板上形成有轉印用圖案者，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，且包含相位偏移部，該相位偏移部係於上述透明基板上形成具有使曝光之光之代表波長之光相位偏移大致180度之相位特性並且具有相對於上述代表波長之光之透過率T(%)之半透光膜而成， 於上述多邊形帶之區域內，形成有上述遮光膜、或包含與上述遮光膜不同之材料之遮光性之補充膜，且 於上述主圖案之周緣之至少一部分，具有將上述遮光膜去除特定寬度而成之雷射熔斷剖面或離子束蝕刻剖面。 (第26態樣) 本發明之第26態樣係 如上述第25態樣之光罩，其特徵在於，上述主圖案係長方形，且於其4邊中至少1邊具有上述雷射熔斷剖面或離子束蝕刻剖面。 (第27態樣) 本發明之第27態樣係 如上述第25態樣之光罩，其特徵在於，上述主圖案係正方形，且於其4邊中至少2邊具有上述雷射熔斷剖面或離子束蝕刻剖面。 (第28態樣) 本發明之第28態樣係 如上述第22、第23、及第25態樣中任一態樣之光罩，其特徵在於，上述輔助圖案配置於上述主圖案之附近，藉由利用透過上述輔助圖案之光使透過上述主圖案之上述曝光之光於被轉印體上形成之光強度分佈變化，而使焦點深度增加。 (第29態樣) 本發明之第29態樣係 如上述第22、第23、及第25態樣中任一態樣之光罩，其特徵在於，上述轉印用圖案滿足下述式(1)。 0.8≦W1≦4.0・・・(1) (第30態樣) 本發明之第30態樣係 如上述第22、第23、及第25態樣中任一態樣之光罩，其特徵在於，上述轉印用圖案滿足下述式(2)。 0.5≦√(T/100)×d≦1.5・・・(2) (第31態樣) 本發明之第31態樣係 如上述第22、第23、及第25態樣中任一態樣之光罩，其特徵在於，上述轉印用圖案於將上述主圖案之中心與上述輔助圖案之寬度方向之中心的距離設為P(μm)時，滿足下述式(3)。 1.0＜P≦5.0・・・(3) (第32態樣) 本發明之第32態樣係 如上述第22、第23、及第25態樣中任一態樣之光罩，其特徵在於，上述轉印用圖案係顯示裝置製造用圖案。 (第33態樣) 本發明之第33態樣係 一種光罩之製造方法，其包含如上述第1、第2、第6、第7及第8態樣中任一態樣之光罩之修正方法。 (第34態樣) 本發明之第34態樣係 一種顯示裝置之製造方法，其包含如下步驟：使用如上述第1、第2、第6、第7及第8態樣中任一態樣之光罩，將包含i光線、h光線、g光線之至少一者之曝光之光照射至上述轉印用圖案，於被轉印體上進行圖案轉印。 (第35態樣) 本發明之第35態樣係 一種顯示裝置之製造方法，其包含如下步驟：使用如上述第22、第23、及第25態樣中任一態樣之光罩，將包含i光線、h光線、g光線之至少一者之曝光之光照射至上述轉印用圖案，於被轉印體上進行圖案轉印。 [發明之效果] (First aspect) The first aspect of the present invention A method for correcting a photomask, characterized in that it is a method for correcting a photomask with a transfer pattern formed on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern has a transmittance T (%) with respect to light of a representative wavelength of the exposure light, and surrounds the main pattern with the light shielding part interposed therebetween, The phase difference between the transmitted light of the auxiliary pattern and the transmitted light of the main pattern relative to the light of the representative wavelength is approximately 180 degrees, When a white defect occurs in the auxiliary pattern, a supplementary film correction is performed to form a light-shielding supplementary film containing a material different from the light-shielding film in the white defect portion. (2nd aspect) The second aspect of the present invention In the method for correcting the photomask of the first aspect, the white defect is less than 1/8 of the area of the auxiliary pattern. (3rd aspect) The third aspect of the present invention The method for correcting a photomask according to the first or second aspect is characterized in that the supplementary film correction is to restore at least a part of the optical performance of the transfer pattern that has been reduced due to the generation of the white defect. (4th aspect) The fourth aspect of the present invention The mask correction method of the third aspect is characterized in that the optical properties include the peak height, focal depth, and exposure in the light intensity distribution formed by the transmitted light of the transfer pattern on the transferred body Any of the margins. (Fifth aspect) The fifth aspect of the present invention The correction method of the photomask according to the first or second aspect is characterized in that the auxiliary pattern is formed on the transparent substrate to have a transmittance T (%) relative to the light of the representative wavelength and has the The light of the wavelength is shifted by a semi-transparent film with phase characteristics of approximately 180 degrees. (6th aspect) The sixth aspect of the present invention A method for correcting a photomask, characterized in that it is a method for correcting a photomask with a transfer pattern formed on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern has a transmittance T (%) with respect to light of a representative wavelength of the exposure light, and surrounds the main pattern with the light shielding part interposed therebetween, The phase difference between the transmitted light of the auxiliary pattern and the transmitted light of the main pattern with respect to the light of the representative wavelength is approximately 180 degrees, and When a black defect occurs in the auxiliary pattern, an expansion correction to expand the width of the main pattern is performed. (Seventh aspect) The seventh aspect of the present invention The method for correcting a photomask according to the sixth aspect is characterized in that the expansion correction is to restore at least a part of the optical performance of the transfer pattern reduced by the occurrence of the black defect. (8th aspect) The eighth aspect of the present invention The correction method of the photomask according to the seventh aspect is characterized in that the optical properties include the peak height, focal depth, and exposure margin of the light intensity distribution formed on the transferred body by the transmitted light of the transfer pattern Any one of degrees. (Ninth aspect) The ninth aspect of the present invention The method for correcting the photomask of any one of the above sixth to eighth aspects is characterized in that the black defect exceeds 1/8 of the area of the auxiliary pattern. (10th aspect) The tenth aspect of the present invention The method for correcting the photomask of any one of the above sixth to eighth aspects, wherein the auxiliary pattern is formed on the transparent substrate with a transmittance T (%) relative to the light of the representative wavelength And it is made of a semi-transmissive film with a phase characteristic that shifts the light of the above-mentioned representative wavelength by approximately 180 degrees. (11th aspect) The 11th aspect of the present invention The method for correcting the mask of any one of the above sixth to eighth aspects is characterized in that the black defect is caused by the formation of a light-shielding supplementary film on the white defect part generated in the auxiliary pattern. defect. (12th aspect) The 12th aspect of the present invention The correction method of the photomask in any one of the above sixth to eighth aspects is characterized in that the area of the main pattern increased by the expansion correction is the area S1 of the auxiliary pattern lost due to the black defect 5% or less. (13th aspect) The 13th aspect of the present invention The method for correcting the mask in any one of the sixth to eighth aspects is characterized in that the expansion correction is performed by retreating at least one of the four sides of the square main pattern toward the light shielding portion. (14th aspect) The 14th aspect of the present invention The method for modifying the mask of any one of the sixth to eighth aspects is characterized in that the expansion modification is performed by removing the edge of the light-shielding film by laser fusing or ion beam etching. (15th aspect) The 15th aspect of the present invention The method for correcting the mask of any one of the above-mentioned first, second, sixth, seventh, and eighth aspects is characterized in that the auxiliary pattern is arranged in the vicinity of the main pattern, by using the transparent The light of the auxiliary pattern changes the light intensity distribution formed on the transferred body by the light of the exposure through the main pattern, thereby increasing the depth of focus. (16th aspect) The 16th aspect of the present invention The method for correcting a photomask in any of the above-mentioned first, second, sixth, seventh, and eighth aspects is characterized in that the transfer pattern satisfies the following formula (1). 0.8≦W1≦4.0・・・(1) (17th aspect) The 17th aspect of the present invention The method for correcting the mask in any of the above 1, 2, 6, 7, and 8, characterized in that the transfer pattern satisfies the following formula (2). 0.5≦√(T/100)×d≦1.5・・・(2) (18th aspect) The 18th aspect of the present invention The method for correcting the mask of any one of the above-mentioned first, second, sixth, seventh, and eighth aspects is characterized in that the transfer pattern is used to combine the center of the main pattern with the auxiliary When the distance between the centers in the width direction of the pattern is P (μm), the following formula (3) is satisfied. 1.0＜P≦5.0・・・(3) (19th aspect) The 19th aspect of the present invention The correction method of the mask of any one of the above-mentioned first, second, sixth, seventh, and eighth aspects, characterized in that the shape of the auxiliary pattern is centered on the center of gravity of the main pattern Polygonal belt. (20th aspect) The 20th aspect of the present invention The method for correcting the mask of any one of the above-mentioned first, second, sixth, seventh, and eighth aspects, characterized in that the transfer pattern forms a hole pattern on the transferred body By. (21st aspect) The 21st aspect of the present invention The mask correction method of the above-mentioned 20th aspect is characterized in that the hole pattern is an isolated hole pattern. (22nd aspect) The 22nd aspect of the present invention A photomask, characterized in that it is formed with a pattern for transfer on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light shielding portion between the periphery of the main pattern, and includes a phase shift portion formed on the transparent substrate with light for exposing The light of the representative wavelength has a phase shift of approximately 180 degrees and a semi-transmissive film with a transmittance T (%) relative to the light of the above-mentioned representative wavelength, and In the area of the above-mentioned polygonal zone, a supplementary film with light-shielding properties including a material different from the above-mentioned light-shielding film is formed. (23rd aspect) The 23rd aspect of the present invention The mask according to the 22nd aspect is characterized in that the supplementary film is formed to be less than 1/8 of the area of the polygonal zone. (24th aspect) The 24th aspect of the present invention The photomask of the 22nd or 23rd aspect is characterized in that, in the polygonal zone, the supplementary film is a laser CVD film. (25th aspect) The 25th aspect of the present invention A photomask, characterized in that it is formed with a pattern for transfer on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light shielding portion between the periphery of the main pattern, and includes a phase shift portion formed on the transparent substrate with light for exposing The light of the representative wavelength has a phase shift of approximately 180 degrees and a semi-transmissive film with a transmittance T (%) relative to the light of the representative wavelength, In the area of the polygonal belt, the light-shielding film, or a light-shielding supplementary film containing a material different from the light-shielding film is formed, and At least a part of the periphery of the main pattern has a laser fusing section or an ion beam etching section obtained by removing the light shielding film by a specific width. (26th aspect) The 26th aspect of the present invention The mask according to the 25th aspect is characterized in that the main pattern is rectangular, and at least one of the four sides has the laser fusing section or ion beam etching section. (27th aspect) The 27th aspect of the present invention The mask according to the 25th aspect is characterized in that the main pattern is a square, and at least two of the four sides have the laser fuse section or ion beam etching section. (28th aspect) The 28th aspect of the present invention The photomask of any one of the 22nd, 23rd, and 25th aspects is characterized in that the auxiliary pattern is arranged near the main pattern, and the light transmitted through the auxiliary pattern is transmitted through the main pattern. The light intensity distribution formed by the above-mentioned exposure light of the pattern on the transferred body changes, which increases the depth of focus. (The 29th aspect) The 29th aspect of the present invention The mask of any one of the 22nd, 23rd, and 25th aspects is characterized in that the transfer pattern satisfies the following formula (1). 0.8≦W1≦4.0・・・(1) (30th aspect) The 30th aspect of the present invention The photomask according to any one of the 22nd, 23rd, and 25th aspects is characterized in that the transfer pattern satisfies the following formula (2). 0.5≦√(T/100)×d≦1.5・・・(2) (31st aspect) The 31st aspect of the present invention The photomask of any of the 22nd, 23rd, and 25th aspects, wherein the transfer pattern is set at a distance between the center of the main pattern and the center of the auxiliary pattern in the width direction. When it is P (μm), the following formula (3) is satisfied. 1.0＜P≦5.0・・・(3) (32nd aspect) The 32nd aspect of the present invention The photomask according to any one of the 22nd, 23rd, and 25th aspects is characterized in that the transfer pattern is a pattern for manufacturing a display device. (The 33rd aspect) The 33rd aspect of the present invention A method for manufacturing a photomask includes a method for modifying the photomask in any of the above-mentioned first, second, sixth, seventh, and eighth aspects. (34th aspect) The 34th aspect of the present invention A method of manufacturing a display device, which includes the following steps: using a mask of any one of the above-mentioned first, second, sixth, seventh and eighth aspects, which will include i-ray, h-ray, and g-ray At least one of the exposure light is irradiated to the transfer pattern, and the pattern is transferred on the transferred body. (35th aspect) The 35th aspect of the present invention A method of manufacturing a display device, comprising the steps of: using a photomask of any one of the 22nd, 23rd, and 25th aspects described above to include at least one of i-ray, h-ray, and g-ray The exposure light is irradiated to the above-mentioned transfer pattern, and the pattern transfer is performed on the body to be transferred. [Effects of Invention]

根據本發明，可對具有主圖案與輔助圖案之精細之轉印用圖案中產生之缺陷有效率地進行修正，以恢復該轉印用圖案之光學性能。According to the present invention, defects generated in a fine transfer pattern having a main pattern and an auxiliary pattern can be efficiently corrected to restore the optical properties of the transfer pattern.

以下，對本發明之實施形態進行說明。於本實施形態中，以下對將具有包含透光部之直徑W1(μm)之主圖案、及配置於上述主圖案之附近且具有曝光裝置不解像之寬度d(μm)之輔助圖案之光罩中所產生之缺陷進行修正的方法進行說明。Hereinafter, embodiments of the present invention will be described. In this embodiment, the following pairs of light with a main pattern including a diameter W1 (μm) of the light-transmitting part, and an auxiliary pattern arranged near the above-mentioned main pattern and having a width d (μm) that is unresolvable by the exposure device The method of correcting the defects generated in the cover is explained.

[關於缺陷修正對象之光罩] 於圖1(a)及(b)中例示作為應用本發明之修正方法之一態樣之光罩(以下，光罩I)。再者，符號僅標註於首次出現者，之後省略。 [About the mask for defect correction objects] 1(a) and (b) illustrate a photomask (hereinafter, photomask I) as one aspect of the correction method applying the present invention. Furthermore, the symbol is only marked on the first appearance, and will be omitted afterwards.

該光罩I具備轉印用圖案，該轉印用圖案係於透明基板10上將遮光膜12及半透光膜11分別圖案化而形成且具有透光部4、遮光部3、相位偏移部5。The photomask I is provided with a transfer pattern, which is formed by patterning the light-shielding film 12 and the semi-light-transmitting film 11 on a transparent substrate 10, respectively, and has a light-transmitting portion 4, a light-shielding portion 3, and a phase shift Section 5.

再者，所謂本案中言及之「轉印用圖案」，係指基於欲使用光罩而獲得之元件設計之圖案，將設為實施下述修正之對象者、或者實施修正後之已修正轉印用圖案均根據其上下文而稱呼。Furthermore, the so-called "transfer pattern" mentioned in this case refers to a pattern based on a device design obtained by using a photomask, which will be the subject of the following corrections, or the corrected transfer after the correction The patterns are called according to their context.

圖1(a)所示之光罩I包含主圖案1與配置於主圖案之附近之輔助圖案2。輔助圖案具有不被將光罩I曝光之曝光裝置解像之寬度d(μm)。The mask I shown in FIG. 1(a) includes a main pattern 1 and an auxiliary pattern 2 arranged near the main pattern. The auxiliary pattern has a width d (μm) that is not resolved by the exposure device that exposes the mask I.

於光罩I中，主圖案與輔助圖案較佳為以相互之透過光之相位差成為大致180度之方式構成。具體而言，主圖案包含透明基板露出之透光部，輔助圖案可設為使透過光之相位偏移大致180度之相位偏移部。例如，輔助圖案如圖1(b)所示，可設為於透明基板上形成有使透過光之相位偏移大致180度之半透光膜(所謂相位偏移膜)者。 或者，亦可如圖1(c)之變化例所示，輔助圖案設為形成有相對於透明基板之表面為特定尺寸之刻蝕部20者，且以主圖案與輔助圖案具有上述相位差之方式構成。以下，關於輔助圖案之構成，主要以圖1(b)所示者、即於透明基板上形成有使透過光之相位偏移大致180度之半透光膜(相位偏移膜)之情形為例進行說明。以下，將此種相位偏移部亦稱為半透光部。 In the mask I, the main pattern and the auxiliary pattern are preferably configured such that the phase difference of the transmitted light with each other becomes approximately 180 degrees. Specifically, the main pattern includes a light-transmitting portion exposed by the transparent substrate, and the auxiliary pattern can be a phase shift portion that shifts the phase of the transmitted light by approximately 180 degrees. For example, as shown in FIG. 1(b), the auxiliary pattern can be formed with a semi-transmissive film (so-called phase shift film) that shifts the phase of transmitted light by approximately 180 degrees on a transparent substrate. Alternatively, as shown in the modification of FIG. 1(c), the auxiliary pattern is formed with an etching portion 20 having a specific size with respect to the surface of the transparent substrate, and the main pattern and the auxiliary pattern have the above-mentioned phase difference Mode composition. Hereinafter, regarding the configuration of the auxiliary pattern, mainly the case shown in FIG. 1(b), that is, a case where a semi-transparent film (phase shift film) that shifts the phase of transmitted light by approximately 180 degrees is formed on a transparent substrate as Examples are explained. Hereinafter, such a phase shift part is also referred to as a semi-transmissive part.

主圖案及輔助圖案以外之區域成為於透明基板上至少形成有遮光膜之遮光部。The area other than the main pattern and the auxiliary pattern becomes a light-shielding part in which at least a light-shielding film is formed on the transparent substrate.

於圖1(b)中，遮光部係由半透光膜與遮光膜於透明基板上積層而成，但亦可為遮光膜單層，或者與半透光膜之積層順序亦可相反。In FIG. 1(b), the light-shielding part is formed by laminating a semi-transmissive film and a light-shielding film on a transparent substrate, but it may be a single layer of the light-shielding film, or the order of the laminated layers of the semi-transparent film may be reversed.

光罩I之主圖案可於被轉印體(顯示裝置之面板等)形成孔圖案，主圖案之直徑(W1)為4 μm以下時效果明顯。為了實現高畫質之顯示裝置所需要之此種尺寸之微細之孔圖案之轉印利用現有之二元光罩較為困難，但光罩I係藉由控制、利用光之干涉作用之設計而實現優異之轉印條件者。The main pattern of the mask I can form a hole pattern on the transferred body (panel of a display device, etc.), and the effect is obvious when the diameter (W1) of the main pattern is 4 μm or less. In order to realize the transfer of the fine hole pattern of this size required by the high-quality display device, it is difficult to use the existing binary mask, but the mask I is realized by the design of control and the interference of light. Those with excellent transfer conditions.

此處，包含相位偏移部之輔助圖案係配置於透光部之附近，且於與透光部之間介隔有遮光部之位置。而且，藉由透過輔助圖案之光，而對透過上述透光部之上述曝光之光於被轉印體上形成之光強度分佈賦予變化。例如，有增高光強度分佈曲線之峰，使轉印圖像之焦點深度(Depth of Focus：DOF)增加及/或使曝光裕度(Exposure Latitude：EL)增加之用途。Here, the auxiliary pattern including the phase shift portion is arranged near the light-transmitting portion, and the light-shielding portion is interposed between the light-transmitting portion. Furthermore, the light passing through the auxiliary pattern imparts a change to the light intensity distribution formed on the transferred body by the exposed light passing through the light transmitting portion. For example, there are uses to increase the peak of the light intensity distribution curve, increase the depth of focus (DOF) of the transferred image and/or increase the exposure margin (EL).

於多數公知之相位偏移光罩中，於相位偏移部與透光部鄰接之邊界處，使反相位之透過光干涉而獲得對比度提高等效果。相對於此，光罩I係於相位偏移部與透光部之間介置遮光部而將其等隔開，使用兩者之透過光之光強度分佈中之外緣側(振幅之正負反轉)之干涉，獲得上述優點。In most known phase shift masks, at the boundary between the phase shift portion and the light-transmitting portion, the transmitted light in the opposite phase interferes to obtain the effect of improving contrast. In contrast to this, the mask I intervenes a light shielding portion between the phase shift portion and the light transmitting portion to separate them, and the light intensity distribution of the transmitted light of the two is used on the outer edge side (positive and negative amplitude Turn) interference to obtain the above advantages.

藉由將光罩I曝光，可與上述主圖案對應地，於被轉印體上形成具有直徑W2(μm)(其中W1≧W2)之微細之主圖案(孔圖案)。By exposing the photomask I, a fine main pattern (hole pattern) having a diameter of W2 (μm) (where W1≧W2) can be formed on the transferred body corresponding to the above-mentioned main pattern.

具體而言，若使直徑W1(μm)成為下述式(1) 0.8≦W1≦4.0・・・(1) 之關係則更有利地獲得本發明之效果。關於此，若直徑W1未達0.8 μm則被轉印體上之解像變得困難，及若直徑W1超過4.0 μm則藉由現有之光罩相對容易獲得解像性，光罩I之作用效果並不明顯。 Specifically, if the diameter W1 (μm) becomes the following formula (1) 0.8≦W1≦4.0・・・(1) The relationship is more advantageous to obtain the effect of the present invention. In this regard, if the diameter W1 is less than 0.8 μm, the resolution on the transferred body becomes difficult, and if the diameter W1 exceeds 4.0 μm, it is relatively easy to obtain the resolution with the existing mask. The effect of the mask I It's not obvious.

此時形成於被轉印體上之主圖案(孔圖案)之直徑W2(μm)可設為 0.6≦W2≦3.0。 At this time, the diameter W2 (μm) of the main pattern (hole pattern) formed on the transferred body can be set as 0.6≦W2≦3.0.

又，於主圖案之直徑W1為3.0(μm)以下時，更明顯地獲得本發明之效果。較佳為，可將主圖案之直徑W1(μm)設為 1.0≦W1≦3.0。 再者，亦可將直徑W1與直徑W2之關係設為W1＝W2，但較佳為設為W1＞W2。即，於將β(μm)設為偏差值時， β＝W1－W2＞0(μm) 時，可設為 0.2≦β≦1.0， 更佳為，可設為 0.2≦β≦0.8。 於將光罩I如此設計時，可獲得使被轉印體上之光阻劑圖案殘膜厚度之損耗減少等之有利的效果。 In addition, when the diameter W1 of the main pattern is 3.0 (μm) or less, the effect of the present invention is more clearly obtained. Preferably, the diameter W1 (μm) of the main pattern can be set to 1.0≦W1≦3.0. Furthermore, the relationship between the diameter W1 and the diameter W2 can also be set as W1=W2, but it is preferable to set W1>W2. That is, when β (μm) is set as the deviation value, β=W1－W2＞0(μm) , Can be set to 0.2≦β≦1.0, More preferably, it can be set to 0.2≦β≦0.8. When the photomask I is designed in this way, it is possible to obtain advantageous effects such as reducing the loss of the residual film thickness of the photoresist pattern on the transferred body.

於上述中，主圖案之直徑W1係指圓之直徑或近似於其之數值。例如，於主圖案之形狀為正多邊形時，主圖案之直徑W1設為正多邊形之內切圓之直徑。若主圖案之形狀如圖1(a)所示為正方形，則主圖案之直徑W1為正方形之一邊之長度。關於經轉印之主圖案(孔圖案)之直徑W2，亦設為圓之直徑或近似於其之數值，於該方面相同。In the above, the diameter W1 of the main pattern refers to the diameter of a circle or a value close to it. For example, when the shape of the main pattern is a regular polygon, the diameter W1 of the main pattern is set to the diameter of the inscribed circle of the regular polygon. If the shape of the main pattern is a square as shown in Figure 1(a), the diameter W1 of the main pattern is the length of one side of the square. Regarding the diameter W2 of the transferred main pattern (hole pattern), it is also set to the diameter of a circle or a value close to it, and the same in this respect.

當然，於欲形成更微細化之圖案時，亦可使直徑W1為2.5(μm)以下或2.0(μm)以下，進而，亦可使直徑W1為1.5(μm)以下而應用本發明。Of course, when a finer pattern is to be formed, the diameter W1 may be 2.5 (μm) or less or 2.0 (μm) or less, and the diameter W1 may be 1.5 (μm) or less to apply the present invention.

相對於具有此種轉印用圖案之光罩I之曝光中所使用之曝光之光的代表波長，主圖案與輔助圖案之透過光之相位差ϕ1為大致180度。因此，輔助圖案中所使用之半透光膜具有使上述透過光偏移ϕ1度之相位偏移特性，ϕ1設為大致180度。The phase difference ϕ1 between the transmitted light of the main pattern and the auxiliary pattern is approximately 180 degrees with respect to the representative wavelength of the exposure light used in the exposure of the photomask I having such a transfer pattern. Therefore, the semi-transmissive film used in the auxiliary pattern has a phase shift characteristic that shifts the above-mentioned transmitted light by ϕ1 degree, and ϕ1 is approximately 180 degrees.

再者，此處，所謂大致180度，係指180度±15度之範圍內。作為半透光膜之相位偏移特性，較佳為180±10度之範圍內，更佳為180±5度之範圍內。Furthermore, here, the term "approximately 180 degrees" means within a range of 180 degrees ± 15 degrees. The phase shift characteristic of the semi-transmissive film is preferably in the range of 180±10 degrees, more preferably in the range of 180±5 degrees.

光罩I之曝光使用包含i光線、h光線、或g光線之曝光之光時效果明顯，尤佳為將包含i光線、h光線、及g光線之寬波長區域之光應用為曝光之光。於該情形時，作為代表波長，可設為該寬波長區域中所包含之任一個波長，例如設為i光線、h光線、g光線之任一者。例如可以g光線作為代表波長而構成本態樣之光罩。The exposure of the mask I is effective when exposure light including i-ray, h-ray, or g-ray is used, and it is particularly preferable to apply light in a wide wavelength region including i-ray, h-ray, and g-ray as exposure light. In this case, as the representative wavelength, any wavelength included in the wide wavelength range can be set, for example, any one of i-ray, h-ray, and g-ray. For example, g ray can be used as the representative wavelength to form the mask of this aspect.

構成輔助圖案之相位偏移部所具有之透過率T可設為如下。 2≦T≦100 於輔助圖案如圖1(c)之變化例所示，藉由透明基板之刻蝕而形成之情形時，該光透過率T成為100%。另一方面，於如圖1(b)所示，於透明基板上形成半透光膜而成之輔助圖案之情形時，該半透光膜之透過率T(%)可設為 2≦T≦95。 此種相位偏移部之光透過率可實現下述轉印用圖案之光學圖像之控制。 較佳為設為 20≦T≦80。 更佳為， 30≦T≦70， 進而較佳為， 35≦T≦65。 再者，透過率T(%)設為以透明基板之透過率為基準時之半透光膜中之上述代表波長之透過率。該透過率為良好之範圍，以有助於與下述尺寸d(輔助圖案之寬度)之設定協作，控制透過輔助圖案之反轉相位之光之光量，藉由與主圖案之透過光之干涉，提高轉印性(例如提高DOF)的作用。 The transmittance T of the phase shift portion constituting the auxiliary pattern can be set as follows. 2≦T≦100 When the auxiliary pattern is formed by etching of a transparent substrate as shown in the modified example of FIG. 1(c), the light transmittance T becomes 100%. On the other hand, as shown in Figure 1(b), when the auxiliary pattern formed by the semi-transmissive film is formed on the transparent substrate, the transmittance T (%) of the semi-transmissive film can be set as 2≦T≦95. The light transmittance of this phase shift part can realize the control of the optical image of the following transfer pattern. Preferably set to 20≦T≦80. Better, 30≦T≦70, More preferably, 35≦T≦65. Furthermore, the transmittance T (%) is set as the transmittance of the above-mentioned representative wavelength in the translucent film based on the transmittance of the transparent substrate. The transmittance is in a good range to help coordinate with the setting of the following dimension d (width of the auxiliary pattern) to control the amount of light passing through the inverted phase of the auxiliary pattern, by interference with the transmitted light of the main pattern , Improve transferability (for example, increase DOF).

於光罩I中，配置於形成有主圖案及輔助圖案之區域以外之區域之遮光部可設為如下構成。In the mask I, the light-shielding portion arranged in an area other than the area where the main pattern and the auxiliary pattern are formed can be configured as follows.

遮光部係實質上不使曝光之光(處於i光線～g光線之波長範圍之代表波長之光)透過者，可設為於透明基板上形成光學密度OD≧2(較佳為OD≧3，更佳為OD＞3)之遮光膜而成者。如上所述，遮光膜亦可與其他膜積層。The light-shielding part is one that does not substantially transmit the exposed light (light of the representative wavelength in the wavelength range of i-ray to g-ray), and can be set to form an optical density OD≧2 (preferably OD≧3 on the transparent substrate). More preferably, it is made of light-shielding film with OD>3). As mentioned above, the light-shielding film can also be laminated with other films.

再者，於光罩I中，主圖案與輔助圖案以外之區域具有僅由遮光部構成之構成。Furthermore, in the mask I, the area other than the main pattern and the auxiliary pattern has a structure composed of only the light shielding portion.

於上述轉印用圖案中，於將輔助圖案之寬度設為d(μm)時，於 0.5≦√(T/100)×d≦1.5     ・・・(2) 成立時，可獲得光罩I之轉印性特別優異之效果。 又，將主圖案之寬度之中心與輔助圖案之寬度方向之中心之距離設為距離P(μm)，距離P較佳為下述式(3)之關係成立，即， 1.0＜P≦5.0      ・・・(3)。 更佳為，距離P可設為 1.5＜P≦4.5， 進而較佳為，可設為 2.5＜P≦4.5。 藉由選擇此種距離P，而輔助圖案之透過光與主圖案之透過光之干涉良好地產生相互作用，藉此可獲得DOF等優異之作用。 In the above transfer pattern, when the width of the auxiliary pattern is set to d (μm), 0.5≦√(T/100)×d≦1.5 ・・・(2) When established, the effect of particularly excellent transferability of the mask I can be obtained. In addition, the distance between the center of the width of the main pattern and the center of the width of the auxiliary pattern is the distance P (μm), and the distance P is preferably the relationship of the following formula (3), that is, 1.0＜P≦5.0 ・・・(3). More preferably, the distance P can be set to 1.5＜P≦4.5, More preferably, it can be set as 2.5<P≦4.5. By selecting such a distance P, the interference of the transmitted light of the auxiliary pattern and the transmitted light of the main pattern interacts well, thereby obtaining excellent effects such as DOF.

輔助圖案之寬度d(μm)係於應用於光罩之曝光條件(所使用之曝光裝置)中，解像極限以下之尺寸。一般而言，考慮顯示裝置製造用之曝光裝置中之解像極限為3.0 μm～2.5 μm左右(i光線～g光線)，具體而言，為 d＜3.0， 較佳為， d＜2.5， 更佳為， d＜2.0。 The width d (μm) of the auxiliary pattern is the size below the resolution limit in the exposure conditions (exposure device used) applied to the photomask. Generally speaking, it is considered that the resolution limit of the exposure device used in the manufacture of display devices is about 3.0 μm to 2.5 μm (i ray to g ray), specifically, d<3.0, Preferably, d<2.5, Better, d<2.0.

又，為了使輔助圖案之透過光良好地與主圖案之透過光干涉，較佳為設為 d≧0.7， 更佳為設為， d≧0.8。 又，較佳為d＜W1。 而且，於此種情形時，光罩I之轉印性良好，並且較佳地使用下述修正步驟。 In addition, in order to make the transmitted light of the auxiliary pattern interfere with the transmitted light of the main pattern well, it is preferably set to d≧0.7, It is better to set, d≧0.8. Moreover, it is preferable that d<W1. Moreover, in this case, the transferability of the photomask I is good, and the following correction steps are preferably used.

又，更佳為，上述(2)之關係式為下述式(2)－1，進而較佳為下述式(2)－2。 0.7≦√(T/100)×d≦1.2     ・・・(2)－1 0.75≦√(T/100)×d≦1.0         ・・・(2)－2 即，透過輔助圖案之反轉相位之光量係於透過率T與寬度d之平衡滿足上述時，發揮優異之效果。 Moreover, it is more preferable that the relational expression of the above-mentioned (2) is the following formula (2)-1, and more preferably the following formula (2)-2. 0.7≦√(T/100)×d≦1.2 ・・・(2)-1 0.75≦√(T/100)×d≦1.0 ・・・(2)-2 That is, the amount of light passing through the inverted phase of the auxiliary pattern exerts an excellent effect when the balance between the transmittance T and the width d satisfies the above.

如上所述，圖1(a)所示之光罩I之主圖案為正方形，該形狀較佳，但應用本發明之光罩並不限定於此。例如，如圖13所例示般，光罩之主圖案可為包含八邊形或圓之旋轉對稱之形狀。而且，可將旋轉對稱之中心設為成為上述距離P之基準之中心。As mentioned above, the main pattern of the photomask I shown in FIG. 1(a) is a square, which is preferable, but the photomask to which the present invention is applied is not limited to this. For example, as illustrated in FIG. 13, the main pattern of the photomask can be a rotationally symmetrical shape including an octagon or a circle. Furthermore, the center of rotational symmetry can be set as the center that becomes the reference of the aforementioned distance P.

又，圖1(a)所示之光罩I之輔助圖案之形狀為八邊形帶，該形狀作為用以形成孔圖案之輔助圖案，能夠穩定地製造，而且，光學效果亦較高。但，應用本發明之光罩並不限定於此。例如，輔助圖案之形狀較佳為對相對於主圖案之中心為3次對稱以上之旋轉對稱之形狀賦予固定之寬度所得者，於圖13(a)～(e)中例示。主圖案之設計與輔助圖案之設計亦可將圖13(a)～(e)之互不相同者組合。In addition, the shape of the auxiliary pattern of the mask I shown in FIG. 1(a) is an octagonal belt. This shape is used as an auxiliary pattern for forming a hole pattern, which can be manufactured stably and has a high optical effect. However, the mask to which the present invention is applied is not limited to this. For example, the shape of the auxiliary pattern is preferably one obtained by giving a fixed width to a rotationally symmetric shape that is 3 times or more symmetric with respect to the center of the main pattern, as illustrated in Figs. 13(a) to (e). The design of the main pattern and the design of the auxiliary pattern can also be combined with the ones shown in Figure 13 (a) ~ (e).

例如，例示輔助圖案之外周為正方形、正六邊形、正八邊形、正十邊形、正十二邊形、正十六邊形等正多邊形(較佳為正2n邊形，n為2以上之整數)或圓形之情形時。而且，作為輔助圖案之形狀，較佳為輔助圖案之外周與內周平行之形狀，即，如具有大致固定之寬度之正多邊形或圓形之帶般之形狀。亦將該帶狀之形狀稱為多邊形帶或圓形帶。作為輔助圖案之形狀，較佳為以主圖案之重心為中心之正多邊形帶或圓形帶介隔遮光部而包圍主圖案之周圍之形狀。此時，可使主圖案之透過光與輔助圖案之透過光之光量之平衡良好。 For example, the outer periphery of the illustrated auxiliary pattern is a regular polygon such as a square, a regular hexagon, a regular octagon, a regular decagon, a regular dodecagon, a regular hexadecagon, etc. (preferably a regular 2n polygon, n is 2 or more In the case of an integer) or a circle. Moreover, as the shape of the auxiliary pattern, a shape in which the outer periphery and the inner periphery of the auxiliary pattern are parallel, that is, a shape such as a regular polygon having a substantially constant width or a circular band is preferable. The belt-like shape is also called a polygonal belt or a circular belt. As the shape of the auxiliary pattern, a regular polygonal belt or a circular belt with the center of gravity of the main pattern as the center is preferably a shape in which the light shielding portion is interposed and surrounds the main pattern. At this time, the light quantity of the transmitted light of the main pattern and that of the auxiliary pattern can be well balanced.

再者，只要不妨礙本發明之效果，則除了主圖案、輔助圖案以外，亦可附加性地使用其他圖案。Furthermore, as long as the effects of the present invention are not hindered, other patterns may be additionally used in addition to the main pattern and the auxiliary pattern.

其次，以下將參照圖14對光罩I之製造方法之一例進行說明。於此處之說明中，符號亦僅標註於首次出現者，之後省略。Next, an example of the manufacturing method of the photomask 1 will be described below with reference to FIG. 14. In the description here, the symbols are only marked on the first occurrence, and will be omitted afterwards.

如圖14(a)所示，準備光罩基底30。As shown in Fig. 14(a), a mask substrate 30 is prepared.

該光罩基底30係於由玻璃等構成之透明基板10上依次形成有半透光膜11與遮光膜12，進而塗佈有第1光阻劑膜13。The photomask base 30 is formed on a transparent substrate 10 made of glass or the like with a semi-transmissive film 11 and a light-shielding film 12 sequentially formed, and a first photoresist film 13 is further coated.

半透光膜較理想為滿足上述透過率與相位差，且包含能夠濕式蝕刻之材料。但，若於濕式蝕刻時所產生之側面蝕刻之量變得過大，則產生CD精度之劣化、或由底切所致之上層膜之破壞等不良情況，故而膜厚之範圍較佳為2000 Å以下。半透光膜之膜厚例如為300～2000 Å之範圍，更佳為300～1800 Å。此處，所謂CD，係指臨界尺寸(Critical Dimension)，於本說明書中以圖案寬度之含義使用。The semi-transmissive film preferably satisfies the above-mentioned transmittance and phase difference and includes a material capable of wet etching. However, if the amount of side etching during wet etching becomes too large, it will cause deterioration of CD accuracy, or damage to the upper layer film caused by undercutting. Therefore, the film thickness range is preferably 2000 Å the following. The film thickness of the semi-transmissive film is, for example, in the range of 300 to 2000 Å, more preferably 300 to 1800 Å. Here, the so-called CD refers to the critical dimension (Critical Dimension), which is used in this specification with the meaning of pattern width.

又，為了滿足該等條件，半透光膜之材料較佳為曝光之光中所包含之代表波長(例如h光線)之折射率為1.5～2.9。更佳之折射率為1.8～2.4。In addition, in order to satisfy these conditions, the material of the semi-transparent film is preferably the refractive index of the representative wavelength (for example, h-ray) contained in the exposure light of 1.5 to 2.9. More preferably, the refractive index is 1.8 to 2.4.

進而，半透光膜較佳為藉由濕式蝕刻而形成之圖案剖面(被蝕刻面)接近於相對於透明基板主表面垂直。Furthermore, it is preferable that the semi-transmissive film has a pattern cross section (etched surface) formed by wet etching close to perpendicular to the main surface of the transparent substrate.

半透光膜之材料例示含有鉻(Cr)者或者含有過渡金屬與Si(矽)者。例如，可列舉Cr或Cr化合物(較佳為CrO、CrC、CrN、CrON等)或者包含Zr(鋯)、Nb(鈮)、Hf(鉿)、Ta(鉭)、Mo(鉬)、Ti(鈦)之至少一者與Si之材料，或者，可使用包括包含該等材料之氧化物、氮化物、氮氧化物、碳化物、或碳氮氧化物之材料者。更具體而言，可列舉鉬矽化氮化物(MoSiN)、鉬矽化氮氧化物(MoSiON)、鉬矽化氧化物(MoSiO)、氮氧化矽(SiON)、鈦氮氧化物(TiON)等。 作為半透光膜之成膜方法，可應用濺鍍法等公知之方法。 Examples of the material of the semi-transmissive film include chromium (Cr) or transition metal and Si (silicon). For example, Cr or Cr compounds (preferably CrO, CrC, CrN, CrON, etc.) or containing Zr (zirconium), Nb (niobium), Hf (hafnium), Ta (tantalum), Mo (molybdenum), Ti ( At least one of titanium) and Si materials, or alternatively, materials including oxides, nitrides, oxynitrides, carbides, or carbonitrides containing these materials may be used. More specifically, molybdenum silicide nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), molybdenum silicide oxide (MoSiO), silicon oxynitride (SiON), titanium oxynitride (TiON), and the like can be cited. As a method of forming a semi-transparent film, a known method such as a sputtering method can be applied.

於光罩基底之半透光膜上，形成遮光膜。作為遮光膜之成膜方法，與半透光膜之情形時相同地，可應用濺鍍法等公知之方法。A light-shielding film is formed on the semi-transparent film of the mask base. As a method for forming a light-shielding film, as in the case of a semi-transparent film, a known method such as a sputtering method can be applied.

遮光膜之材料既可為Cr或其化合物(氧化物、氮化物、碳化物、氮氧化物、或碳氮氧化物)，或者，亦可為包含Mo、W、Ta、Ti之金屬之矽化物或該矽化物之上述化合物。但，光罩基底之遮光膜之材料較佳為與半透光膜同樣地能夠濕式蝕刻且相對於半透光膜之材料具有蝕刻選擇性之材料。即，較理想為，遮光膜相對於半透光膜之蝕刻劑具有耐受性，又，半透光膜相對於遮光膜之蝕刻劑具有耐受性。The material of the light-shielding film can be Cr or its compound (oxide, nitride, carbide, oxynitride, or oxycarbonitride), or silicide of metal containing Mo, W, Ta, Ti Or the above-mentioned compound of the silicide. However, the material of the light-shielding film of the photomask base is preferably a material that can be wet-etched like the semi-transparent film and has etching selectivity with respect to the material of the semi-transparent film. That is, it is desirable that the light-shielding film has resistance to the etchant of the semi-transmissive film, and the semi-transmissive film has resistance to the etchant of the light-shielding film.

於光罩基底之遮光膜上，進而塗佈第1光阻劑膜。本態樣之光罩之繪圖步驟較佳為較佳地利用藉由雷射繪圖裝置進行之繪圖，故而設為適合於其之光阻劑。第1光阻劑膜既可為正型亦可為負型，以下，以正型進行說明。On the light-shielding film of the mask base, a first photoresist film is further coated. The drawing step of the photomask in this aspect preferably utilizes drawing by a laser drawing device, so it is set as a photoresist suitable for it. The first photoresist film may be a positive type or a negative type, and the positive type will be described below.

其次，如圖14(b)所示，對第1光阻劑膜，使用繪圖裝置，進行基於轉印用圖案之繪圖資料之繪圖(第1繪圖)。而且，將藉由顯影獲得之第1光阻劑圖案13p作為遮罩，對遮光膜進行濕式蝕刻。藉此，成為遮光部之區域劃定，又，由遮光部包圍之輔助圖案(遮光膜圖案12p)之區域劃定。Next, as shown in FIG. 14(b), a drawing device is used for the first photoresist film to perform drawing based on drawing data of the transfer pattern (first drawing). Then, the light-shielding film is wet-etched using the first photoresist pattern 13p obtained by development as a mask. Thereby, the area which becomes the light-shielding part is demarcated, and the area|region of the auxiliary pattern (light-shielding film pattern 12p) enclosed by the light-shielding part is delimited.

其次，如圖14(c)所示，將第1光阻劑圖案剝離。Next, as shown in FIG. 14(c), the first photoresist pattern is peeled off.

其次，如圖14(d)所示，於包含所形成之遮光膜圖案之整面，塗佈第2光阻劑膜14。Next, as shown in FIG. 14(d), the second photoresist film 14 is coated on the entire surface including the formed light-shielding film pattern.

其次，如圖14(e)所示，對第2光阻劑膜14進行第2繪圖，藉由顯影而形成第2光阻劑圖案14p，繼而，藉由將該第2光阻劑圖案與上述遮光膜圖案設為遮罩，進行半透光膜之濕式蝕刻，而形成包含透明基板露出之透光部之主圖案之區域。再者，較佳為，第2光阻劑圖案係覆蓋成為輔助圖案之區域，並於成為包含透光部之主圖案之區域具有開口者，並且預先以遮光膜之邊緣自該開口露出之方式對第2繪圖之繪圖資料進行定尺寸(sizing)。藉此，可吸收第1繪圖與第2繪圖之間相互產生之對準偏移，防止轉印用圖案之CD精度之劣化，故而可使主圖案及輔助圖案之重心精確地一致。Next, as shown in FIG. 14(e), a second drawing is performed on the second photoresist film 14, and a second photoresist pattern 14p is formed by development. Then, the second photoresist pattern is combined with The above-mentioned light-shielding film pattern is set as a mask, and the semi-light-transmitting film is wet-etched to form an area including the main pattern of the light-transmitting part exposed by the transparent substrate. Furthermore, it is preferable that the second photoresist pattern covers the area that becomes the auxiliary pattern, and has an opening in the area that becomes the main pattern including the light-transmitting portion, and the edge of the light-shielding film is exposed from the opening in advance Sizing the drawing data of the second drawing. Thereby, the misalignment between the first drawing and the second drawing can be absorbed, and the CD accuracy of the transfer pattern can be prevented from deteriorating, so that the center of gravity of the main pattern and the auxiliary pattern can be accurately aligned.

其次，如圖14(f)所示，將第2光阻劑圖案剝離，而圖1(a)、(b)所示之本態樣之光罩I完成。Next, as shown in FIG. 14(f), the second photoresist pattern is peeled off, and the original mask I shown in FIGS. 1(a) and (b) is completed.

於此種光罩之製造時可應用濕式蝕刻。濕式蝕刻由於具有各向同性蝕刻之性質，故而若考慮半透光膜之膜厚，則自加工之容易性之觀點而言，有用的是輔助圖案之寬度d設為1 μm以上，較佳為設為1.2 μm以上。Wet etching can be used in the manufacture of such photomasks. Since wet etching has the properties of isotropic etching, considering the film thickness of the translucent film, from the viewpoint of ease of processing, it is useful to set the width d of the auxiliary pattern to 1 μm or more, preferably It is set to 1.2 μm or more.

關於圖1(a)、(b)所示之本態樣之光罩I，藉由光學模擬，將其轉印性能進行比較、評估。Regarding the mask I of the original state shown in Fig. 1 (a) and (b), the transfer performance was compared and evaluated by optical simulation.

此處，作為用以於被轉印體上形成孔圖案之轉印用圖案，準備參考例1及參考例2，並對共通地設定曝光條件時表現何種轉印性能進行光學模擬。Here, as a transfer pattern for forming a hole pattern on the transfer target body, Reference Example 1 and Reference Example 2 were prepared, and an optical simulation was performed on what kind of transfer performance was expressed when exposure conditions were set in common.

(參考例1) 參考例1之光罩係具有與圖1(a)、(b)中所說明之上述光罩I相同之構成之光罩。此處，包含透光部之主圖案係設為一邊(直徑)(即W1)為2.0(μm)之正方形，設為包含半透光部之輔助圖案之寬度d為1.3(μm)之八邊形帶，主圖案之寬度之中心與輔助圖案之寬度方向之中心的距離即距離P設為3.25(μm)。 (Reference example 1) The photomask of Reference Example 1 is a photomask having the same configuration as the above-mentioned photomask I described in FIGS. 1(a) and (b). Here, the main pattern including the light-transmitting part is set as a square with one side (diameter) (ie W1) of 2.0 (μm), and the auxiliary pattern including the semi-light-transmitting part is set as eight sides with a width d of 1.3 (μm) For the shaped belt, the distance P between the center of the width of the main pattern and the center of the width of the auxiliary pattern is set to 3.25 (μm).

輔助圖案係於透明基板上形成半透光膜而成。該半透光膜之對g光線波長之透過率T為45(%)，相位偏移量為180度。又，包圍主圖案及輔助圖案之遮光部係由實質上不使曝光之光透過之遮光膜(較佳為OD＞3)構成。The auxiliary pattern is formed by forming a semi-transparent film on a transparent substrate. The transmissivity T of the semi-transparent film to the wavelength of g light is 45 (%), and the phase shift is 180 degrees. In addition, the light-shielding portion surrounding the main pattern and the auxiliary pattern is composed of a light-shielding film (preferably OD>3) that does not substantially transmit the exposed light.

(參考例2) 如圖1(d)所示，參考例2之光罩具有包含形成於透明基板上之遮光膜圖案之所謂二元光罩之圖案。該光罩中，包含透明基板露出之透光部之正方形之主圖案1由遮光部(較佳為OD＞3)3包圍。主圖案之直徑W1(正方形之一邊)為2.0(μm)。 (Reference example 2) As shown in FIG. 1(d), the mask of Reference Example 2 has a so-called binary mask pattern including a light-shielding film pattern formed on a transparent substrate. In the mask, the square main pattern 1 including the light-transmitting part exposed by the transparent substrate is surrounded by the light-shielding part (preferably OD>3) 3. The diameter W1 (one side of the square) of the main pattern is 2.0 (μm).

關於參考例1及2之光罩之任一者，均於被轉印體上形成直徑W2為1.5 μm之孔圖案，模擬中應用之曝光條件如下所述。即，曝光之光設為包含i光線、h光線、g光線之寬波長，光強度比設為g：h：i＝1：1：1。Regarding any of the photomasks of Reference Examples 1 and 2, a hole pattern with a diameter W2 of 1.5 μm was formed on the transferred body, and the exposure conditions used in the simulation were as follows. That is, the light for exposure is set to a broad wavelength including i-ray, h-ray, and g-ray, and the light intensity ratio is set to be g:h:i=1:1:1.

曝光裝置之光學系統係數值孔徑NA為0.1，同調因子σ為0.5。用以掌握形成於被轉印體上之光阻劑圖案之剖面形狀之正型光阻劑之膜厚設為1.5 μm。The optical system coefficient value of the exposure device, the aperture NA is 0.1, and the coherence factor σ is 0.5. The film thickness of the positive photoresist used to grasp the cross-sectional shape of the photoresist pattern formed on the transferred body was set to 1.5 μm.

圖1(e)表示於上述條件下各轉印用圖案之性能評估。Figure 1(e) shows the performance evaluation of each transfer pattern under the above conditions.

[光罩之光學性評估] 例如，為了將直徑較小之微細之透光圖案轉印至被轉印體上，由透過光罩後之曝光之光於被轉印體上形成之空間圖像所形成之透過光強度分佈曲線之分佈必須較佳。具體而言，重要的是，形成透過光強度分佈之峰之傾斜尖銳且呈接近垂直之上升、及峰之光強度之絕對值較高(於在周圍形成次峰之情形時，相對於其強度，相對而言充分高)等。 [Optical Evaluation of Mask] For example, in order to transfer a fine light-transmitting pattern with a small diameter to the transfer body, the transmitted light intensity distribution curve is formed by the spatial image formed by the exposed light after passing through the mask on the transfer body The distribution must be better. Specifically, it is important that the inclination of the peak that forms the intensity distribution of the transmitted light is sharp and rises close to vertical, and the absolute value of the peak light intensity is relatively high (when the secondary peak is formed around it, relative to its intensity The language is sufficiently high) and so on.

根據光學性能更定量地評估光罩時，可使用如下指標。 (1)焦點深度(Depths of Focus：DOF) 用以使變動幅度相對於目標CD成為特定範圍內(此處為±15%之範圍內)之焦點深度之大小。若DOF之數值較高，則不易受被轉印體(例如顯示裝置用之面板基板)之平坦度之影響，可確實地形成微細之圖案，抑制其CD偏差。 (2)曝光裕度(EL：Exposure Latitude) 用以使變動幅度相對於目標CD成為特定範圍內(此處為±15%之範圍內)之曝光光強度之裕度。 若根據以上評估模擬對象之各樣品之性能，則如圖1(e)所示，參考例1之光罩係焦點深度(DOF)與參考例2相比非常優異，光罩不易受被轉印體之平坦度等之影響，表現圖案穩定之轉印性。 When evaluating a mask more quantitatively based on its optical performance, the following indicators can be used. (1) Depths of Focus (Depths of Focus: DOF) It is used to make the range of variation relative to the target CD become the size of the focal depth within a specific range (here within ±15%). If the value of DOF is high, it is less likely to be affected by the flatness of the transferred body (for example, a panel substrate for a display device), and a fine pattern can be formed reliably, and CD deviation can be suppressed. (2) Exposure Latitude (EL: Exposure Latitude) It is used to make the variation range relative to the target CD a margin of exposure light intensity within a specific range (here, within the range of ±15%). If the performance of each sample of the simulated object is evaluated based on the above, as shown in Figure 1(e), the depth of focus (DOF) of the mask system of Reference Example 1 is very excellent compared with that of Reference Example 2, and the mask is not easily transferred. The influence of the flatness of the body, etc., shows the stable transferability of the pattern.

又，參考例1之光罩係於EL方面亦表現10.0(%)以上之優異之數值，即，相對於曝光光量之變動，可實現穩定之轉印條件。 進而，參考例1之光罩之劑量值(用以形成目標尺寸之圖案之照射光量)相對於參考例2而言相當小。該情況表示於參考例1之光罩之情形時，即便於製造大面積之顯示裝置時，曝光時間亦不增大或可縮短曝光時間之優點。 In addition, the photomask of Reference Example 1 also exhibits an excellent value of 10.0 (%) or more in terms of EL, that is, it can realize stable transfer conditions with respect to changes in the amount of exposure light. Furthermore, the dose value of the mask of Reference Example 1 (the amount of irradiated light used to form a pattern of the target size) is relatively small compared to Reference Example 2. This situation is shown in the case of the photomask of Reference Example 1, even when a large-area display device is manufactured, the exposure time does not increase or the exposure time can be shortened.

[關於光罩I中產生之缺陷] 於圖2中表示於將上述光罩I(參考例1，圖2(a))曝光時形成於被轉印體上之光學圖像之光強度分佈曲線(圖2(b))。尤其，圖2(b)係於圖2(a)中之一點鏈線部分中，正焦時與25 μm及50 μm散焦時之光強度分佈曲線。再者，於圖2(b)中省略了該等散焦量中之μm之記載，＋表示接近正焦之方向，－表示遠離正焦之方向。與主圖案對應之中央之主峰充分高，且陡峭。又，產生於兩側之次峰由於與主峰之強度差充分大，故而不對主圖案之轉印帶來影響，又，因散焦所致之CD變動之影響亦較小。 [About Defects in Mask I] Fig. 2 shows the light intensity distribution curve (Fig. 2(b)) of the optical image formed on the transferred body when the above-mentioned mask I (Reference Example 1, Fig. 2(a)) is exposed. In particular, Fig. 2(b) is the light intensity distribution curve at a point of the chain line part in Fig. 2(a) when the focus is normal and when the focus is 25 μm and 50 μm. Furthermore, in Fig. 2(b), the description of μm in the defocus amount is omitted, and + means the direction close to normal focus, and-means the direction away from normal focus. The main peak in the center corresponding to the main pattern is sufficiently high and steep. In addition, since the intensity difference between the secondary peaks generated on both sides and the main peak is sufficiently large, it does not affect the transfer of the main pattern, and the influence of CD variation due to defocusing is also small.

另一方面，於圖3中表示於光罩I所具備之八邊形帶之輔助圖案產生缺陷之情形時之光學圖像之光強度分佈曲線。圖3(a)係表示於光罩I所具有之八邊形帶之輔助圖案之一部分產生白缺陷FW之情形。此處，針對如圖4所示將輔助圖案利用中心角劃分所得之分區(以下，亦稱為中心角分區)之1個(此處為對八邊形帶之輔助圖案進行八等分時之1個分區，即整體之1/8分區，參照圖4)產生白缺陷之情形，對其轉印性進行研究。如圖3(b)所示，光強度分佈之主峰之光強度較圖2(b)下降，除此以外，主峰與次峰之光強度之差較小，尤其於散焦時，對於被轉印體上之光阻劑，無法避免因次峰所致之影響(對光阻劑圖案之損傷)。因此，產生不可忽視輔助圖案中產生之白缺陷之影響之情形。認為即便輔助圖案為八邊形帶以外之多邊形體或圓形帶，亦同樣地產生此種現象。On the other hand, FIG. 3 shows the light intensity distribution curve of the optical image when the auxiliary pattern of the octagonal band provided in the mask 1 is defective. FIG. 3(a) shows a situation where a white defect FW is generated in a part of the auxiliary pattern of the octagonal band of the mask I. Here, for one of the partitions obtained by dividing the auxiliary pattern by the center angle as shown in FIG. 4 (hereinafter, also referred to as the center angle partition) (here, the auxiliary pattern of the octagonal belt is divided into eight equal parts). 1 zone, that is, 1/8 zone of the whole, refer to Figure 4) when white defects are generated, and the transferability is studied. As shown in Figure 3(b), the light intensity of the main peak of the light intensity distribution is lower than that of Figure 2(b). In addition, the difference between the light intensity of the main peak and the secondary peak is small, especially when the defocus is The photoresist on the body cannot avoid the influence caused by the secondary peak (damage to the photoresist pattern). Therefore, the influence of the white defect generated in the auxiliary pattern cannot be ignored. It is thought that even if the auxiliary pattern is a polygonal body or a circular belt other than an octagonal belt, this phenomenon occurs similarly.

圖3(c)表示光罩I所具有之八邊形帶之輔助圖案之一部分(與上述同樣地為1/8分區)產生黑缺陷FB之情形，於圖3(d)中表示此時之光學圖像之光強度分佈曲線。此種黑缺陷例如會於製造步驟中半透光膜上之遮光膜殘留之情形等時產生。但，推測若為該黑缺陷，則於光學圖像之光強度分佈中，主峰之光強度略微下降，但轉印性不會產生較大問題。即，於輔助圖案中產生之缺陷為黑缺陷之情形時或白缺陷之情形時，均降低形成於被轉印體上之光強度分佈之峰，就該方面而言，有損光學性能，但較黑缺陷而言白缺陷對主圖案之轉印性帶來較大影響。換言之，圖3(d)所示之黑缺陷之情形時之光強度分佈之峰與圖3(b)所示之白缺陷之情形時之光強度分佈之峰相比較高，山之傾斜亦陡峭。認為該方面亦並不限定於八邊形帶之輔助圖案，關於將主圖案之周圍介隔遮光部而包圍之輔助圖案同樣。Fig. 3(c) shows a part of the auxiliary pattern of the octagonal band of the mask I (the same as the above-mentioned 1/8 division) has a black defect FB. Fig. 3(d) shows the situation at this time The light intensity distribution curve of the optical image. Such black defects may occur, for example, when the light-shielding film on the semi-transparent film remains in the manufacturing process. However, it is inferred that if it is the black defect, in the light intensity distribution of the optical image, the light intensity of the main peak decreases slightly, but the transferability does not cause a major problem. That is, when the defect generated in the auxiliary pattern is a black defect or a white defect, the peak of the light intensity distribution formed on the transferred body is reduced. In this respect, the optical performance is impaired, but Compared with black defects, white defects have a greater impact on the transferability of the main pattern. In other words, the peak of the light intensity distribution in the case of the black defect shown in Fig. 3(d) is higher than the peak of the light intensity distribution in the case of the white defect shown in Fig. 3(b), and the slope of the mountain is also steep . It is considered that this aspect is not limited to the auxiliary pattern of the octagonal belt, and the same is true for the auxiliary pattern that surrounds the main pattern with a light shielding portion.

本發明者等人基於上述知識見解，對光罩I中產生之缺陷修正之方法進行了研究。即，對將因缺陷而降低之轉印用圖案之光學性能至少部分地恢復之方法進行了研究。Based on the above knowledge and insights, the inventors of the present invention conducted research on methods of correcting defects generated in the mask I. That is, a method of at least partially recovering the optical properties of the transfer pattern that has been reduced due to defects has been studied.

再者，一般而言，將於光罩圖案上必需之膜缺失而該部分之透過光量增大之缺陷稱為白缺陷，將多餘物附著而透過光量減少之情形稱為黑缺陷。於本案說明書中，除了此種情形以外，於相位偏移部藉由透明基板之刻蝕而形成之情形時，關於因刻蝕不足而無法獲得充分之相位偏移效果之情形亦視為白缺陷。其原因在於，輔助圖案相位偏移效果降低，產生與上述白缺陷類似之作用。Furthermore, generally speaking, the defect in which the necessary film on the mask pattern is missing and the amount of transmitted light in that part increases is called a white defect, and the situation in which excess matter adheres and the amount of transmitted light decreases is called a black defect. In the specification of this case, in addition to this case, when the phase shift part is formed by etching of a transparent substrate, the case where a sufficient phase shift effect cannot be obtained due to insufficient etching is also regarded as a white defect . The reason is that the phase shift effect of the auxiliary pattern is reduced, producing an effect similar to the white defect described above.

[缺陷修正法1] 以下，藉由模擬算出於八邊形帶之輔助圖案中之1個分區整體產生黑缺陷之光罩I(圖5(d))之轉印性能(DOF、EL)，關於該算出結果，將參考例1之正常之光罩I(圖5(b))及參考例2之二元光罩(圖5(c))進行比較。於圖5(a)中表示比較結果。 [Defect Correction Method 1] Below, by simulating the transfer performance (DOF, EL) of mask I (Figure 5(d)) where black defects are generated in one of the sub-patterns of the octagonal belt as a whole, the calculation result will be The normal mask I of Reference Example 1 (Figure 5(b)) and the binary mask of Reference Example 2 (Figure 5(c)) are compared. The comparison result is shown in Figure 5(a).

如於圖1中提及般，二元光罩可以光罩I之約1.5倍之劑量值(曝光時之照射光量)而於被轉印體上形成目標尺寸(1.5 μm)之孔圖案。然而，若利用對正常之光罩I最佳化之劑量值(此處，為82.0 mJ/cm 2)，則無法形成目標尺寸之圖像。因此，為了形成目標尺寸之圖像，而將主圖案之直徑擴大至2.28 μm為止。圖5(a)之參考例2中記載為「(註1)」係表示如上所述進行了主圖案之直徑之變更。再者，於圖3(a)所示之具有白缺陷之轉印用圖案中，於上述曝光條件下，亦無法於被轉印體上獲得目標尺寸之轉印圖像，無法推算DOF、EL之值。 As mentioned in FIG. 1, the binary mask can form a hole pattern of target size (1.5 μm) on the transferred body at a dose value of about 1.5 times that of the mask I (the amount of irradiated light during exposure). However, if the dose value optimized for the normal mask I (here, 82.0 mJ/cm 2 ) is used, an image of the target size cannot be formed. Therefore, in order to form an image of the target size, the diameter of the main pattern is enlarged to 2.28 μm. The description "(Note 1)" in Reference Example 2 of Fig. 5(a) means that the diameter of the main pattern has been changed as described above. Furthermore, in the transfer pattern with white defects shown in Figure 3(a), under the above-mentioned exposure conditions, the transfer image of the target size cannot be obtained on the transferred body, and the DOF and EL cannot be estimated. The value.

如圖5(a)所示，具有黑缺陷之實施例1之DOF及EL低於作為正常圖案之參考例1。另一方面，可知該實施例1之DOF及EL高於參考例2(不具有輔助圖案，僅藉由主圖案之擴大而獲得目標尺寸者)之二元光罩，故而藉由殘存之輔助圖案而發揮轉印性提高之效果。因此，作為缺陷修正方法，至少使DOF及EL之任一者高於參考例2之二元光罩成為指標。 進而，根據本發明者等人之研究，藉由最近之曝光裝置之性能提高，只要EL為4%以上，便能夠轉印，另一方面，DOF受顯示裝置製造用之大型基板之平坦度等之影響，較佳為超過20 μm。該2個參數均係越大越佳，於成為取捨之情形時，實際上使DOF優先之情形較多。因此，為了獲得DOF高於20 μm且EL儘可能大之條件，對缺陷修正方法進行了研究。 As shown in FIG. 5(a), the DOF and EL of Example 1 with black defects are lower than those of Reference Example 1, which is a normal pattern. On the other hand, it can be seen that the DOF and EL of Example 1 are higher than the binary mask of Reference Example 2 (without auxiliary patterns, but the target size is obtained only by the expansion of the main pattern), so the remaining auxiliary patterns And exert the effect of improving transferability. Therefore, as a defect correction method, at least one of DOF and EL is higher than the binary mask of Reference Example 2 as an index. Furthermore, according to the research of the inventors and others, with the recent improvement in the performance of the exposure device, as long as the EL is 4% or more, the transfer can be achieved. On the other hand, the DOF is affected by the flatness of the large substrate used in the manufacture of display devices. The influence is preferably more than 20 μm. The larger the two parameters, the better, and when it becomes a choice, there are actually many cases where DOF is prioritized. Therefore, in order to obtain the condition that the DOF is higher than 20 μm and the EL is as large as possible, the defect correction method is studied.

圖6(a)表示於光罩I之輔助圖案產生白缺陷之部位。該缺陷產生於輔助圖案之8個分區A～H中之1個分區內。缺陷之產生區域係於中心角分區中，為1/8以下，作為輔助圖案之喪失面積亦為輔助圖案整體之1/8以下。因此，可對該白缺陷進行形成遮光性(例如OD＞3)之補充膜16之修正(補充膜修正)(圖6(b))。補充膜係覆蓋白缺陷區域者，且係上述1個分區以內之區域。又，補充膜之形成可設為藉由雷射CVD而形成之CVD膜。因此，補充膜之組成係與上述遮光膜組成不同。另一方面，藉由如此進行修正，可獲得不低於上述實施例1之轉印性。 即，因輔助圖案中產生之白缺陷而降低之轉印用圖案之光學性能可藉由在該白缺陷部分形成遮光性之補充膜使其具有與遮光部同等之遮光性，而至少部分地恢復。此處，光學性能包含光強度分佈曲線之峰高、DOF之大小、EL之大小。又，特定尺寸(目標CD之±15%之範圍)之轉印圖像為不形成於被轉印體上之狀態，但包含成為形成於被轉印體上之狀態之情形。 再者，關於上述缺陷修正法1，對圖1(b)所示之光罩I進行了說明，但關於圖1(c)之變化例所示之光罩，亦可同樣地進行。於該情形時，可對應在透明基板具有刻蝕部分之輔助圖案之因刻蝕不足而產生之白缺陷實施上述補充膜形成來進行修正。 FIG. 6(a) shows the locations where white defects are generated in the auxiliary pattern of the mask 1. The defect occurs in one of the eight sub-areas A to H of the auxiliary pattern. The defect generation area is in the central corner zone, which is less than 1/8, and the area lost as the auxiliary pattern is also less than 1/8 of the entire auxiliary pattern. Therefore, the white defect can be corrected to form a supplementary film 16 with light-shielding properties (for example, OD>3) (complementary film correction) (FIG. 6(b)). The supplementary film covers the white defect area and is the area within the above 1 zone. In addition, the formation of the supplementary film may be a CVD film formed by laser CVD. Therefore, the composition of the supplementary film is different from the above-mentioned light-shielding film. On the other hand, by making corrections in this way, transferability not inferior to that of Example 1 can be obtained. That is, the optical performance of the transfer pattern reduced by the white defect generated in the auxiliary pattern can be at least partially restored by forming a light-shielding supplementary film on the white defect portion to have the same light-shielding properties as the light-shielding portion . Here, the optical performance includes the peak height of the light intensity distribution curve, the size of DOF, and the size of EL. In addition, the transfer image of a specific size (±15% of the target CD) is not formed on the transferred body, but includes the state formed on the transferred body. Furthermore, regarding the defect correction method 1, the photomask I shown in FIG. 1(b) was described, but the same can be done for the photomask shown in the modified example of FIG. 1(c). In this case, the above-mentioned supplementary film formation can be performed to correct the white defect caused by insufficient etching in the auxiliary pattern of the etched part of the transparent substrate.

[缺陷修正法2] 圖7表示於光罩之輔助圖案之2個分區(中心角分區2/8)產生黑缺陷之例。該黑缺陷亦可為因對所產生之白缺陷形成補充膜而產生之黑缺陷。 [Defect Correction Method 2] Fig. 7 shows an example of black defects generated in 2 zones (central angle zone 2/8) of the auxiliary pattern of the photomask. The black defect may also be a black defect generated by forming a supplementary film for the generated white defect.

但，與缺陷修正法1不同，作為輔助圖案之喪失面積亦達到中心角分區2/8，其影響更大，因此，若保持原樣則有無法滿足DOF 20 μm之擔憂。認為其原因在於，正常之光罩I係輔助圖案所形成之光強度分佈中出現之一部分之透過光作出使主圖案之透過光之光強度增加之貢獻，相對於此，若輔助圖案超過其面積之1/8地缺損，則無法充分獲得上述光強度增加之貢獻。實際上，根據本發明者等人之研究，如圖7般，於2個分區產生黑缺陷之情形時，利用與上述相同之曝光條件，無法形成目標尺寸之轉印圖像，因此，亦不可能推算DOF或EL。However, unlike the defect correction method 1, the loss area of the auxiliary pattern also reaches 2/8 of the central angle division, which has a greater influence. Therefore, if it is left as it is, there is a concern that the DOF 20 μm cannot be satisfied. It is believed that the reason is that the normal mask I is a part of the light intensity distribution formed by the auxiliary pattern and the transmitted light contributes to the increase in the light intensity of the main pattern. In contrast, if the auxiliary pattern exceeds its area If 1/8 of the ground is missing, the above-mentioned contribution of the increase in light intensity cannot be fully obtained. In fact, according to the research conducted by the inventors, as shown in Figure 7, when black defects are generated in two regions, the transfer image of the target size cannot be formed under the same exposure conditions as above. Therefore, it is not It is possible to calculate DOF or EL.

因此，於實施例2～4中，對產生中心角分區2/8之黑缺陷之光罩I進行將主圖案之尺寸擴展之修正(擴展修正)，以彌補失去輔助圖案對主圖案之光強度增加之貢獻。即，代替對產生缺陷之輔助圖案實施修正，而以主圖案為對象，實施擴展修正。藉此，不需要於黑缺陷區域形成具有特定之透過率、相位差之修正膜。主圖案之尺寸擴展可藉由使四邊形(此處為正方形)之主圖案之4邊中至少1條邊向遮光部側後退而進行。 實施例2～4係不變更主圖案之重心位置，相對於由虛線所示之正常之主圖案之輪廓(正方形)，使主圖案之相互對向之2邊分別向遮光部側各後退相同尺寸，而使主圖案之尺寸擴展(圖7(a)，圖8之「兩側」)。於實施例5～7中，不變更主圖案之重心位置，相對於由虛線所示之正常之主圖案之輪廓，使主圖案之4邊分別向遮光部側各後退相同尺寸，而使主圖案之尺寸擴展(圖7(b)，圖8之「4邊」)。又，實施例8～10係相對於由虛線所示之正常之主圖案之輪廓，使主圖案之1邊向遮光部側後退而使主圖案之尺寸擴展(圖7(c)，圖8之「重心移動」)。於實施例8～10中，主圖案之重心位置向擴展邊側移動。 再者，主圖案之尺寸擴展方法亦可為圖示之態樣以外之擴展方法。例如，亦可使正方形之主圖案之相鄰之2邊分別向遮光部側後退。 主圖案之尺寸擴展係可藉由使用雷射CVD裝置之雷射熔斷、或使用FIB裝置之離子束蝕刻，將位於主圖案之一邊之遮光膜之邊緣部分去除特定尺寸量而進行。 Therefore, in Examples 2 to 4, the mask I, which has a black defect of 2/8 of the central angle division, was corrected to expand the size of the main pattern (expansion correction) to compensate for the loss of the light intensity of the auxiliary pattern to the main pattern Increased contribution. In other words, instead of correcting the auxiliary pattern where the defect occurs, the main pattern is used as the target and the extended correction is performed. This eliminates the need to form a correction film with specific transmittance and phase difference in the black defect area. The size expansion of the main pattern can be performed by retreating at least one of the four sides of the main pattern of the quadrilateral (here, square) toward the light-shielding portion. Examples 2 to 4 do not change the position of the center of gravity of the main pattern. Relative to the outline (square) of the normal main pattern shown by the dashed line, the two opposite sides of the main pattern are set back to the light-shielding part side by the same size. , And expand the size of the main pattern (Figure 7 (a), Figure 8 "both sides"). In Examples 5-7, the center of gravity position of the main pattern was not changed. Relative to the outline of the normal main pattern shown by the dashed line, the four sides of the main pattern were retreated to the light-shielding part side by the same size, and the main pattern The size is expanded (Figure 7(b), Figure 8 "4-side"). In addition, in Examples 8 to 10, with respect to the outline of the normal main pattern shown by the dashed line, one side of the main pattern was retracted to the side of the light-shielding part to expand the size of the main pattern (Figure 7(c), Figure 8) "Move the center of gravity"). In Examples 8-10, the center of gravity of the main pattern moved to the side of the expansion. Furthermore, the size expansion method of the main pattern can also be an expansion method other than that shown in the figure. For example, the adjacent two sides of the square main pattern may be moved back to the light-shielding part side. The size expansion of the main pattern can be performed by removing a certain size from the edge of the light-shielding film on one side of the main pattern by laser fusing using a laser CVD device or ion beam etching using a FIB device.

針對如此實施修正後之光罩I，藉由模擬而推算DOF、EL。於圖8中表示該推算結果。再者，假定根據輔助圖案中產生缺損之分區之位置而光強度之空間圖像形狀變化，此處，對X方向、Y方向之DOF、及EL之值進行推算，於評估時將其中分別較小者記載於圖中。For the mask I after the correction is implemented, DOF and EL are estimated by simulation. The result of this estimation is shown in FIG. 8. Furthermore, assuming that the spatial image shape of the light intensity changes according to the position of the defective zone in the auxiliary pattern, here, the values of DOF, and EL in the X direction and Y direction are estimated and compared with each other during the evaluation. The smaller is recorded in the picture.

根據圖8，於應用任一種擴展方法之情形時，藉由在上述曝光條件下實施擴展修正，均於被轉印體上獲得轉印圖像(孔圖案)，而獲得此時之DOF及EL。即，藉由擴展修正，確認到因缺陷產生而喪失之光學性能之恢復。進而，確認到，於相對於輔助圖案之喪失面積以固定之比率使主圖案之面積擴展時，DOF之恢復傾向較佳。於推算中，光罩I之輔助圖案1個分區之面積為3.5 μm 2。 According to Figure 8, in the case of applying any of the expansion methods, by implementing the expansion correction under the above exposure conditions, the transferred image (hole pattern) is obtained on the transferred body, and the DOF and EL at this time are obtained. . That is, through extended correction, it was confirmed that the optical performance lost due to defects was restored. Furthermore, it was confirmed that the recovery tendency of DOF is better when the area of the main pattern is expanded at a fixed ratio to the lost area of the auxiliary pattern. In the calculation, the area of one sub-area of the auxiliary pattern of the mask I is 3.5 μm 2 .

圖9表示光罩之輔助圖案之中心角分區4/8缺損之情形。將對此種缺陷利用與實施例2～10同樣之方法使主圖案之面積擴展而實施擴展修正後之結果示於圖10之實施例11～19。Figure 9 shows the 4/8 defect of the central corner of the auxiliary pattern of the photomask. The results of this defect after expanding the area of the main pattern by the same method as in Examples 2 to 10 and implementing expansion correction are shown in Examples 11 to 19 in FIG. 10.

圖11表示光罩之輔助圖案之中心角分區5/8缺損之情形。將對此種缺陷利用與實施例2～10同樣之方法使主圖案之面積擴展而實施擴展修正後之模擬結果示於圖12之實施例20～28。Figure 11 shows the 5/8 defect of the central corner of the auxiliary pattern of the mask. The simulation results of this defect after the area of the main pattern is expanded by the same method as in Examples 2-10 and the expansion correction is implemented are shown in Examples 20-28 in FIG. 12.

當成為於輔助圖案之中心角分區2/8以上產生缺損之黑缺陷時，若於在被轉印體上未形成目標尺寸之孔圖案之狀況下，如上述般進行擴展修正，則可將喪失之光學性能至少部分地恢復，該內容根據上述而明確。即，於輔助圖案之喪失面積超過1/8時，主圖案之擴展修正對光學性能之恢復有效。 再者，於上述中，對在複數個連續之中心角分區產生黑缺陷，輔助圖案之一部分缺損之情形進行了說明。另一方面，亦假定於複數個中心角分區且處於不連續之位置之部分產生黑缺陷。因此，關於不連續之各種缺陷位置之情形，亦對形成於被轉印體上之光強度分佈之變化與相對於其之主圖案之擴展修正之效果進行光學模擬。其結果，亦會因不連續之缺陷而導致使主圖案之透過光所形成之光強度分佈增加之輔助圖案之功能喪失一部分的傾向與上述連續之情形大致相同，又，藉由上述主圖案之擴展修正，同樣確認到降低之功能之恢復。 When it becomes a black defect that produces a defect at 2/8 or more of the central angle of the auxiliary pattern, if the target size hole pattern is not formed on the transfer body, the expansion correction can be performed as described above. The optical performance is at least partially restored, which is clear from the above. That is, when the lost area of the auxiliary pattern exceeds 1/8, the expansion correction of the main pattern is effective to restore the optical performance. Furthermore, in the above, the case where a black defect occurs in a plurality of consecutive central corner partitions and a part of the auxiliary pattern is defective is explained. On the other hand, it is also assumed that a black defect occurs in a portion of a plurality of central angle divisions that are not continuous. Therefore, regarding the situation of discontinuous defect positions, optical simulation is also performed on the effect of the change of the light intensity distribution formed on the transferred body and the expansion and correction of the main pattern relative to it. As a result, due to the discontinuous defect, the function of the auxiliary pattern that increases the light intensity distribution formed by the transmitted light of the main pattern will lose part of the tendency, which is roughly the same as the above-mentioned continuous situation. In addition, by the above-mentioned main pattern Expansion and correction have also confirmed the restoration of reduced functions.

主圖案之擴展修正時之擴展方向可為四方、2個方向、1個方向之任一者。但，主圖案之擴展修正較佳為於主圖案之外緣之任一部分均不與殘存之輔助圖案接觸之範圍進行。 又，根據本發明者等人之研究，因黑缺陷之產生而被轉印體上之光強度分佈之峰降低，該降低傾向與因黑缺陷而喪失之輔助圖案面積實質上成比例。此處，藉由進行主圖案之擴展修正，而降低之光強度之峰位置朝向恢復方向。但，較佳為於不超過於無缺陷之情形時所獲得之光強度之峰高(參考)之範圍進行擴展修正。藉此，可避免EL明顯降低。 又，根據圖8、圖10、圖12之結果，主圖案之擴展面積(增加面積)S2相對於喪失之輔助圖案之面積S1的比率(S2/S1)較佳為大於零且5%以下，尤其於設為2.5%～5%時，同時確認到DOF與EL之恢復效果。之後，比率(S2/S1)以百分率(100×S2/S1)記載。 The expansion direction of the main pattern during expansion correction can be any of four directions, two directions, and one direction. However, the expansion and correction of the main pattern is preferably performed in a range where any part of the outer edge of the main pattern is not in contact with the remaining auxiliary pattern. In addition, according to research conducted by the inventors of the present invention, the peak of the light intensity distribution on the transferred body decreases due to the occurrence of black defects, and the tendency of this decrease is substantially proportional to the area of the auxiliary pattern lost due to the black defects. Here, by performing the expansion and correction of the main pattern, the peak position of the reduced light intensity faces the recovery direction. However, it is better to expand and correct the range of the peak height (reference) of the light intensity obtained in the absence of defects. In this way, a significant reduction in EL can be avoided. In addition, according to the results of FIGS. 8, 10, and 12, the ratio (S2/S1) of the expanded area (increased area) S2 of the main pattern to the area S1 of the lost auxiliary pattern is preferably greater than zero and less than 5%, Especially when it is set to 2.5% to 5%, the recovery effect of DOF and EL can be confirmed at the same time. After that, the ratio (S2/S1) is described as a percentage (100×S2/S1).

若著眼於DOF，於2～5個分區之輔助圖案缺損之各實施例群中進行評估，則比率S2/S1為4.3～4.6%時有利。若著眼於EL，於上述各缺損之實施例群中進行評估，則比率S2/S1為2.5～4.1%時有利。又，若重視DOF與EL之平衡，於上述各缺損之實施例群中進行評估，則比率S2/S1為3.4～4.1%時有利。If you focus on DOF and evaluate in each example group where the auxiliary pattern is defective in 2 to 5 partitions, it is advantageous when the ratio S2/S1 is 4.3 to 4.6%. If you focus on EL and evaluate in each of the above-mentioned defective example groups, it is advantageous when the ratio S2/S1 is 2.5 to 4.1%. In addition, if the balance between DOF and EL is emphasized, and evaluation is performed in each of the above-mentioned defective example groups, it is advantageous when the ratio S2/S1 is 3.4 to 4.1%.

因此，可認為於比率S2/S1為3.4～4.6%時，可獲得重視DOF之較佳之轉印性。Therefore, it can be considered that when the ratio S2/S1 is 3.4 to 4.6%, better transferability with emphasis on DOF can be obtained.

又，可知本發明之修正方法於輔助圖案之缺損以中心角分區計為4/8以下時，更有效地發揮作用。In addition, it can be seen that the correction method of the present invention works more effectively when the defect of the auxiliary pattern is 4/8 or less in terms of the central angle division.

此處，藉由主圖案之尺寸擴展面積，而進行DOF或EL之恢復，另一方面，未觀察到主圖案之擴展方法與DOF、EL之恢復有較強之關聯。即，認為根據輔助圖案之缺損面積，有損該區域之透過光之貢獻(與主圖案之透過光之光之干涉)，另一方面，根據主圖案之擴展修正之面積，產生轉印性能之恢復，兩者之面積有關聯。尤其，於直徑W1(μm)為曝光裝置之解像極限以下之情形時(例如W1≦3)，較之主圖案之形狀，藉由光之透過面積而控制轉印性能。Here, the restoration of DOF or EL is performed by expanding the area of the main pattern. On the other hand, it is not observed that the expansion method of the main pattern is strongly related to the restoration of DOF and EL. That is, it is considered that the contribution of the transmitted light (interference with the transmitted light of the main pattern) in the area is impaired based on the defect area of the auxiliary pattern. On the other hand, the area corrected based on the expansion of the main pattern results in the transfer performance Recovery is related to the area of the two. In particular, when the diameter W1 (μm) is below the resolution limit of the exposure device (for example, W1≦3), the transfer performance is controlled by the light transmission area compared to the shape of the main pattern.

因此，擴展修正後之主圖案之形狀既可為正方形，亦可為長方形，由於根據擴展尺寸，有主圖案與輔助圖案接觸而兩者之間難以維持適當之尺寸之遮光部之情形，故而較佳為正方形。於不易產生主圖案與輔助圖案之接觸之情形時(例如，於擴展方向之輔助圖案缺損之情形時)，擴展修正後之主圖案之形狀亦可為長方形。 再者，上述缺陷修正法2之說明係關於圖1(b)所示之光罩I進行，但關於圖1(c)之光罩亦可同樣地應用。於該情形時，在應於透明基板具有刻蝕部分之輔助圖案產生存在遮光膜或異物而成之黑缺陷、或者由於對因刻蝕不足而產生之白缺陷形成遮光性之補充膜而產生之黑缺陷時，可對主圖案應用上述擴展修正而謀求轉印性能之恢復。 Therefore, the shape of the main pattern after expansion and correction can be square or rectangular. Depending on the expanded size, the main pattern and the auxiliary pattern are in contact with each other and it is difficult to maintain a light-shielding portion of an appropriate size between the two. Better to be square. When it is not easy to produce contact between the main pattern and the auxiliary pattern (for example, when the auxiliary pattern in the expansion direction is defective), the shape of the main pattern after expansion correction can also be rectangular. Furthermore, the description of the defect correction method 2 described above is made with respect to the mask I shown in FIG. 1(b), but the mask in FIG. 1(c) can be similarly applied. In this case, the black defect caused by the presence of a light-shielding film or foreign matter in the auxiliary pattern corresponding to the etched part of the transparent substrate, or the formation of a light-shielding supplementary film for the white defect caused by insufficient etching In the case of black defects, the above-mentioned extended correction can be applied to the main pattern to seek the recovery of the transfer performance.

本發明包含具有以下特徵之光罩。The present invention includes a photomask having the following characteristics.

一種光罩，其係於透明基板上形成有轉印用圖案者，上述轉印用圖案具有包含透光部之直徑W1之主圖案、及配置於上述主圖案之附近且具有不被曝光裝置解像之寬度d(μm)之輔助圖案。於主圖案為孔圖案，尤其孤立孔圖案時，明顯獲得本發明之效果。A photomask is formed on a transparent substrate with a pattern for transfer, the pattern for transfer has a main pattern with a diameter W1 including a light-transmitting portion, and is disposed near the main pattern and has a pattern that cannot be resolved by an exposure device. Auxiliary pattern of image width d (μm). When the main pattern is a hole pattern, especially an isolated hole pattern, the effect of the present invention is obviously obtained.

上述轉印用圖案還包含構成將上述主圖案與輔助圖案除外之區域之遮光部，上述遮光部係於上述透明基板上至少形成遮光膜而成。The pattern for transfer further includes a light-shielding portion constituting a region excluding the main pattern and the auxiliary pattern, and the light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate.

上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，且包括相位偏移部，該相位偏移部係於上述透明基板上形成具有使曝光之光之代表波長之光相位偏移大致180度之相位特性並且具有相對於上述代表波長之光之透過率T(%)的半透光膜而成，於上述多邊形帶之面積之1/8以下之區域，形成有上述遮光膜或遮光性之補充膜。 或者，上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，藉由將上述透明基板表面刻蝕至特定深度，而具有使輔助圖案之透過光與主圖案之透過光之間具有大致180度之相位差之相位偏移部，且於上述多邊形帶之面積之1/8以下之區域，形成有上述遮光膜或遮光性之補充膜。 The auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light shielding portion between the periphery of the main pattern, and includes a phase shift portion formed on the transparent substrate with light for exposing The light of the representative wavelength has a phase shift of approximately 180 degrees and a semi-transmissive film with a transmittance T (%) relative to the light of the representative wavelength, in the area below 1/8 of the area of the polygonal zone , Formed with the above-mentioned light-shielding film or light-shielding supplementary film. Alternatively, the auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light-shielding portion between the periphery of the main pattern, and the surface of the transparent substrate is etched to a certain depth, so that the transmitted light of the auxiliary pattern and the main The transmitted light of the pattern has a phase shift portion with a phase difference of approximately 180 degrees, and the above-mentioned light-shielding film or light-shielding supplementary film is formed in an area less than 1/8 of the area of the polygonal belt.

上述光罩包含對上述光罩I實施了本發明之修正之光罩，其構成於俯視時，例示為圖5(d)所示之實施例1之光罩、或圖6(b)所示之光罩。The above-mentioned photomask includes a photomask in which the modification of the present invention is applied to the above-mentioned photomask I. When viewed from above, the configuration is illustrated as the photomask of Example 1 shown in FIG. 5(d) or as shown in FIG. 6(b) The light mask.

又，本發明包含以下構成之光罩。In addition, the present invention includes a photomask having the following configuration.

一種光罩，其係於透明基板上形成轉印用圖案者，上述轉印用圖案具有包含透光部之直徑W1之主圖案、及配置於上述主圖案之附近且具有不被曝光裝置解像之寬度d(μm)之輔助圖案。A photomask, which is formed on a transparent substrate with a pattern for transfer, the pattern for transfer has a main pattern with a diameter W1 including a light-transmitting portion, and is arranged near the main pattern and is not resolved by an exposure device The width d (μm) of the auxiliary pattern.

上述轉印用圖案還包含遮光部，該遮光部處於將上述主圖案與上述輔助圖案除外之區域，且包圍上述主圖案及上述輔助圖案，上述遮光部係於上述透明基板上形成遮光膜而成。The pattern for transfer further includes a light-shielding portion in a region excluding the main pattern and the auxiliary pattern, and surrounding the main pattern and the auxiliary pattern, and the light-shielding portion is formed by forming a light-shielding film on the transparent substrate .

上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，且包括相位偏移部，該相位偏移部係於上述透明基板上形成具有使曝光之光之代表波長之光相位偏移大致180度之相位特性並且具有相對於上述代表波長之光之透過率T(%)的半透光膜而成，於上述多邊形帶之區域內，形成有上述遮光膜或遮光性之補充膜，且於上述主圖案之周緣之至少一部分，具有將上述遮光膜去除特定寬度而成之雷射熔斷剖面或離子束蝕刻剖面。 或者，上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內，藉由將上述透明基板表面刻蝕至特定深度，而具有使輔助圖案之透過光與主圖案之透過光之間具有大致180度之相位差之相位偏移部，於上述多邊形帶之區域內，形成有上述遮光膜或遮光性之補充膜，且於上述主圖案之周緣之至少一部分，具有將上述遮光膜去除特定寬度而成之雷射熔斷剖面或離子束蝕刻剖面。 The auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light shielding portion between the periphery of the main pattern, and includes a phase shift portion formed on the transparent substrate with light for exposing A semi-transmissive film with a phase shift of approximately 180 degrees for the light of the representative wavelength and a transmittance T (%) relative to the light of the representative wavelength. The light-shielding film is formed in the region of the polygonal zone Or a light-shielding supplementary film, and at least a part of the periphery of the main pattern has a laser fusing section or an ion beam etching section obtained by removing the light-shielding film by a specific width. Alternatively, the auxiliary pattern is arranged in an area of a polygonal zone surrounded by the light-shielding portion between the periphery of the main pattern, and the surface of the transparent substrate is etched to a certain depth, so that the transmitted light of the auxiliary pattern and the main The phase shift part with a phase difference of approximately 180 degrees between the transmitted light of the pattern is formed with the light-shielding film or the light-shielding supplementary film in the area of the polygonal zone, and at least a part of the periphery of the main pattern, It has a laser fuse section or ion beam etching section obtained by removing the above-mentioned light-shielding film with a specific width.

所謂雷射熔斷剖面，係指藉由雷射熔斷將遮光膜或補充膜之一部分去除時，形成於其邊緣之剖面。又，所謂離子束蝕刻剖面，係指藉由聚焦離子束(Focused Ion beam)將遮光膜或補充膜之一部分去除時，形成於其邊緣之剖面。此種圖案邊緣係表現與正常圖案所具有之遮光膜之邊緣(藉由濕式蝕刻而形成之邊緣)不同之剖面狀態且藉由修正裝置而形成之邊緣。The so-called laser fusing section refers to the section formed at the edge of the shading film or supplementary film by laser fusing. In addition, the so-called ion beam etching profile refers to the profile formed at the edge of the light-shielding film or supplementary film by a focused ion beam (Focused Ion beam). The edge of such a pattern is an edge formed by a correction device in a different cross-sectional state from the edge of the light-shielding film (the edge formed by wet etching) of the normal pattern.

上述光罩包含對上述光罩I實施了本發明之修正之光罩，其構成於俯視時，例示為圖7(a)～(c)所示之光罩。 本發明之光罩可係對圖1(b)所示之光罩I、或圖1(c)所示之變化例之光罩實施了修正之結果，同時具有實施了擴展修正之轉印用圖案與正常之轉印用圖案者。此時，實施了修正之轉印用圖案之主圖案與正常之轉印用圖案之主圖案可使形狀(例如直徑、縱橫比)不同，且前者之面積較後者之面積大。 The above-mentioned photomask includes a photomask in which the modification of the present invention is applied to the above-mentioned photomask I, and its structure is illustrated as the photomask shown in FIGS. 7(a) to (c) when viewed from above. The photomask of the present invention can be the result of the correction of the photomask I shown in Figure 1(b) or the photomask of the modified example shown in Figure 1(c), and it can also be used for transfer with extended correction. Patterns and normal transfer patterns. At this time, the main pattern of the corrected transfer pattern and the main pattern of the normal transfer pattern can have different shapes (for example, diameter, aspect ratio), and the former has a larger area than the latter.

又，本發明包括包含上述修正方法之光罩之製造方法。Furthermore, the present invention includes a manufacturing method of a photomask including the above-mentioned correction method.

於上述光罩I之製造方法中，於所形成之半透光部產生缺陷時，可應用本發明之修正方法。於該情形時，例如，於圖14(f)所示之第2光阻劑剝離步驟之後，設置缺陷檢查步驟、及修正步驟，於該修正步驟中應用本發明之修正方法即可。In the manufacturing method of the above-mentioned photomask I, the correction method of the present invention can be applied when defects occur in the formed semi-transmissive part. In this case, for example, after the second photoresist stripping step shown in FIG. 14(f), a defect inspection step and a correction step are provided, and the correction method of the present invention may be applied to the correction step.

本發明包括包含對上述本發明之光罩藉由曝光裝置進行曝光而將上述轉印用圖案轉印至被轉印體上之步驟的顯示裝置之製造方法。The present invention includes a method of manufacturing a display device including the step of exposing the above-mentioned photomask of the present invention by an exposure device to transfer the above-mentioned transfer pattern to a transfer target body.

本發明之顯示裝置之製造方法中，首先，準備上述本態樣之光罩。其次，將上述轉印用圖案曝光，於被轉印體上形成直徑W2為0.6～3.0 μm之孔圖案。In the manufacturing method of the display device of the present invention, first, the photomask of the above aspect is prepared. Next, the above-mentioned transfer pattern is exposed to light, and a hole pattern having a diameter W2 of 0.6 to 3.0 μm is formed on the transferred body.

作為所使用之曝光裝置，為進行等倍之投影曝光之方式，且較佳為以下者。即，為作為FPD(Flat Panel Display，平板顯示器)用而使用之曝光裝置，其構成係光學系統之數值孔徑(NA)為0.08～0.15(同調因子σ為0.4～0.9)，且具有包含i光線、h光線及g光線之至少一者之曝光之光之光源。但，於如數值孔徑NA為0.10～0.20般之曝光裝置中，當然亦能夠應用本發明而獲得發明之效果。The exposure device used is a method of performing projection exposure at equal magnification, and the following are preferred. That is, it is an exposure device used as an FPD (Flat Panel Display), which constitutes an optical system with a numerical aperture (NA) of 0.08 to 0.15 (coherent factor σ is 0.4 to 0.9), and has a light beam containing i The light source for exposure of at least one of h-ray and g-ray. However, in an exposure apparatus having a numerical aperture NA of 0.10-0.20, it is of course possible to apply the present invention to obtain the effects of the invention.

又，所使用之曝光裝置之光源亦可使用變形照明(此處，係指將相對於光罩垂直入射之光成分遮蔽之光源，包含環形照明等斜入射光源)，但藉由非變形照明可獲得本發明之優異之效果。In addition, the light source of the exposure device used can also use anamorphic illumination (here, it refers to the light source that shields the light component that is perpendicular to the mask, including oblique incident light sources such as ring illumination), but the non-anamorphic illumination can The excellent effects of the present invention are obtained.

應用本發明之光罩之用途並不特別限制。本發明之光罩可設為於製造包含液晶顯示裝置或EL顯示裝置等之顯示裝置時可較佳地使用之透過型光罩。 又，於本說明書中，所謂顯示裝置，包括用以構成顯示裝置之顯示裝置用元件。 The use of the mask to which the present invention is applied is not particularly limited. The photomask of the present invention can be set as a transmissive photomask that can be preferably used when manufacturing display devices including liquid crystal display devices or EL display devices. In addition, in this specification, the so-called display device includes display device components for constituting the display device.

根據使用透過光之相位反轉之輔助圖案之本發明之光罩，可控制透過主圖案與輔助圖案之兩者之曝光之光的相互干涉，大幅度地改善透過光所形成之空間圖像之分佈。According to the photomask of the present invention using the auxiliary pattern of the phase inversion of the transmitted light, the mutual interference of the exposure light transmitted through the main pattern and the auxiliary pattern can be controlled, and the spatial image formed by the transmitted light can be greatly improved distributed.

作為有利地獲得此種作用效果之用途，為了形成液晶或EL裝置中多使用之接觸孔等孤立之孔圖案而使用本發明之光罩較為有利。作為圖案之種類，將藉由多個圖案具有固定之規則性地排列而該等相互產生光學性影響之密集(Dense)圖案、與周圍不存在此種規則性排列之圖案之孤立圖案區別稱呼之情況較多。本發明之光罩於欲在被轉印體上形成孤立圖案時可尤佳地應用。For the purpose of advantageously obtaining such effects, it is advantageous to use the photomask of the present invention in order to form isolated hole patterns such as contact holes commonly used in liquid crystal or EL devices. As a type of pattern, the Dense pattern that generates optical influence by a plurality of patterns arranged in a fixed regularity, and the isolated pattern that does not have such a regular arrangement around it is called differently There are many situations. The photomask of the present invention can be particularly preferably used when an isolated pattern is to be formed on the transferred body.

於不損及本發明之效果之範圍，應用本發明之光罩亦可使用附加性的光學膜或功能膜。例如，為了防止遮光膜所具有之光透過率對檢查或光罩之位置偵測造成障礙之不良情況，亦可設為於轉印用圖案以外之區域形成遮光膜之構成。又，亦可於半透光膜或遮光膜之表面設置用以使繪圖光或曝光之光之反射減少之抗反射層。進而，亦可於半透光膜之背面設置抗反射層。In a range that does not impair the effects of the present invention, additional optical films or functional films can also be used with the mask of the present invention. For example, in order to prevent the light transmittance of the light-shielding film from impeding the inspection or the position detection of the photomask, the light-shielding film can also be formed in a region other than the transfer pattern. In addition, an anti-reflection layer for reducing the reflection of drawing light or exposure light can also be provided on the surface of the semi-transparent film or the light-shielding film. Furthermore, an anti-reflection layer can also be provided on the back surface of the semi-transparent film.

1                主圖案 2                輔助圖案 3                遮光部 4                透光部 5                相位偏移部(半透光部) 10               透明基板 11               半透光膜 12               遮光膜 12p             遮光膜圖案 13               第1光阻劑膜 13p             第1光阻劑圖案 14               第2光阻劑膜 14p             第2光阻劑圖案 16               補充膜 20               刻蝕部 30               光罩基底 d                寬度 FW             白缺陷 FB              黑缺陷 P                距離 W1             直徑 1 Main pattern 2 Auxiliary pattern 3 Shading part 4 Translucent part 5 Phase shift part (semi-transparent part) 10 Transparent substrate 11 Semi-transparent film 12 Shading film 12p Shading film pattern 13 The first photoresist film 13p The first photoresist pattern 14 The second photoresist film 14p The second photoresist pattern 16 Supplementary film 20 Etching department 30 Mask base d Width FW White defect FB Black defect P Distance W1 Diameter

圖1(a)係作為應用本發明之修正方法之一態樣之光罩(參考例1)且具有包含主圖案與配置於主圖案之附近之輔助圖案之轉印用圖案之光罩(光罩I)的俯視模式圖。 圖1(b)係圖1(a)之A-A位置之剖視模式圖。 圖1(c)係具有未形成半透光膜而於透明基板形成有刻蝕部之輔助圖案之變化例之光罩之情形時之圖1(a)之A-A位置的剖視模式圖。 圖1(d)係表示參考例2之光罩之圖案之俯視模式圖。 圖1(e)係表示參考例1及2之各轉印用圖案之性能評估之圖。 圖2(a)係光罩I之俯視模式圖，圖2(b)係於圖2(a)中之一點鏈線部分中，正焦時與25 μm及50 μm散焦時之光強度分佈曲線。 圖3(a)係表示於光罩I所具有之八邊形帶之輔助圖案之一部分產生白缺陷之情形的俯視模式圖，圖3(b)係於圖3(a)中之一點鏈線部分中，正焦時與25 μm及50 μm散焦時之光強度分佈曲線。圖3(c)係表示於光罩I所具有之八邊形帶之輔助圖案之一部分產生黑缺陷之情形的俯視模式圖，圖3(d)係於圖3(c)中之一點鏈線部分中，正焦時與25 μm及50 μm散焦時之光強度分佈曲線。 圖4係表示將光罩I所具有之八邊形帶之輔助圖案均等地劃分為中心角分區A～H之情況的俯視模式圖。 圖5(a)係與參考例1、參考例2之圖案一起將本發明之實施例1之轉印性能(DOF(Depth of Focus，焦點深度)、EL(Exposure Latitude，曝光寬容度))藉由模擬而算出之結果。圖5(b)係參考例1之正常之光罩I之俯視模式圖，圖5(c)係參考例2之二元光罩之俯視模式圖，圖5(d)係假定產生缺陷之輔助圖案之1個分區成為遮光部之情形之實施例1的俯視模式圖。 圖6(a)係表示於光罩I之輔助圖案產生白缺陷之部位之俯視模式圖，圖6(b)係表示進行於該白缺陷形成遮光性之補充膜之修正之情況的俯視模式圖。 圖7係表示於光罩之輔助圖案之2個分區(中心角分區2/8)產生黑缺陷之例的俯視模式圖，圖7(a)(兩側，實施例2～4)係表示不變更主圖案之重心位置，相對於虛線所示之原來之主圖案之輪廓，使主圖案之相互對向之2邊向遮光部側各後退相同尺寸，使主圖案之尺寸擴展之情況的俯視模式圖，圖7(b)(4邊，實施例5～7)係表示不變更主圖案之重心位置，相對於虛線所示之原來之主圖案之輪廓，使主圖案之4邊向遮光部側各後退相同尺寸，使主圖案之尺寸擴展之情況的俯視模式圖，圖7(c)(重心移動，實施例8～10)係表示相對於虛線所示之原來之主圖案之輪廓，使主圖案之1邊向遮光部側後退，使主圖案之尺寸擴展之情況的俯視模式圖。 圖8係表示對如圖7(a)～(c)所示般實施修正後之光罩I藉由模擬求出DOF、EL之結果的圖。 圖9係表示於光罩I中4個分區(中心角分區4/8)之輔助圖案缺損而成為黑缺陷之情形之俯視模式圖。 圖10係表示對圖9所示之光罩I，利用與圖7(a)～(c)(實施例2～10)相同之方法使主圖案之面積擴展，藉由模擬求出DOF、EL之結果的圖。 圖11係表示於光罩I中5個分區(中心角分區5/8)之輔助圖案缺損而成為黑缺陷之情形之俯視模式圖。 圖12係表示對圖11所示之光罩I，利用與圖7(a)～(c)(實施例2～10)相同之方法使主圖案之面積擴展，藉由模擬求出DOF、EL之結果的圖。 圖13(a)～(e)係例示輔助圖案與主圖案之組合之變化之俯視模式圖。 圖14(a)～(f)係表示光罩I之製造方法之一例之剖視模式圖。 Figure 1(a) is a photomask (Reference Example 1) as one aspect of the correction method of the present invention and has a photomask (light mask) for transfer including a main pattern and an auxiliary pattern arranged near the main pattern. Top view of cover 1). Fig. 1(b) is a schematic sectional view of the position A-A in Fig. 1(a). Fig. 1(c) is a schematic cross-sectional view at the position A-A of Fig. 1(a) when there is a photomask with a modified example of the auxiliary pattern of the etching part formed on the transparent substrate without forming a semi-transparent film. FIG. 1(d) is a schematic plan view showing the pattern of the mask of Reference Example 2. FIG. Fig. 1(e) is a graph showing the performance evaluation of each transfer pattern of Reference Examples 1 and 2. Fig. 2(a) is a top view of the mask I, Fig. 2(b) is the light intensity distribution at the point chain line part of Fig. 2(a) when the focus is normal and when 25 μm and 50 μm are defocused curve. Fig. 3(a) is a schematic plan view showing a situation where a white defect occurs in a part of the auxiliary pattern of the octagonal band of the mask I, and Fig. 3(b) is a dotted chain line in Fig. 3(a) In the part, the distribution curve of light intensity at normal focus, 25 μm and 50 μm defocus. Fig. 3(c) is a schematic plan view showing a situation where black defects are generated in a part of the auxiliary pattern of the octagonal band of the mask I, and Fig. 3(d) is a dotted chain line in Fig. 3(c) In the part, the distribution curve of light intensity at normal focus, 25 μm and 50 μm defocus. FIG. 4 is a schematic plan view showing a case where the auxiliary pattern of the octagonal band of the mask I is equally divided into the central angle divisions A to H. Fig. 5(a) is the transfer performance (DOF (Depth of Focus, depth of focus), EL (Exposure Latitude, exposure latitude)) of Example 1 of the present invention together with the patterns of Reference Example 1 and Reference Example 2 The result calculated by simulation. Fig. 5(b) is a schematic plan view of the normal mask I of Reference Example 1, Fig. 5(c) is a schematic plan view of the binary mask of Reference Example 2, and Fig. 5(d) is an auxiliary device assuming defects A schematic plan view of Example 1 where one partition of the pattern becomes a light-shielding part. Fig. 6(a) is a schematic plan view showing a portion where a white defect is generated in the auxiliary pattern of the mask I, and Fig. 6(b) is a schematic plan view showing a situation where the white defect is corrected by forming a light-shielding supplementary film . Fig. 7 is a schematic plan view showing an example of the occurrence of black defects in 2 divisions (central angle division 2/8) of the auxiliary pattern of the mask, and Fig. 7(a) (both sides, Examples 2 to 4) shows no Change the position of the center of gravity of the main pattern, relative to the outline of the original main pattern shown by the dotted line, make the two opposite sides of the main pattern move back to the side of the shading part by the same size, and expand the size of the main pattern. Figure, Figure 7(b) (4 sides, Examples 5-7) shows that the center of gravity of the main pattern is not changed, and the four sides of the main pattern face the light-shielding part relative to the outline of the original main pattern shown by the dotted line The top model view of the situation where the size of the main pattern is expanded by the same size of each back, Figure 7(c) (center of gravity shift, Examples 8-10) shows the outline of the original main pattern shown by the dotted line, so that the main pattern A schematic plan view of a situation where one side of the pattern is retracted to the side of the light-shielding part to expand the size of the main pattern. FIG. 8 is a diagram showing the results of obtaining DOF and EL by simulation on the mask I after correction as shown in FIGS. 7(a) to (c). FIG. 9 is a schematic plan view showing a situation in which the auxiliary patterns of 4 partitions (central angle partition 4/8) in the mask I are defective and become black defects. Figure 10 shows the mask I shown in Figure 9, using the same method as Figure 7 (a) ~ (c) (Examples 2 ~ 10) to expand the area of the main pattern, by simulation to obtain DOF, EL The graph of the result. FIG. 11 is a schematic plan view showing a situation in which the auxiliary patterns of 5 partitions (central angle partition 5/8) in the mask I are defective and become black defects. Figure 12 shows the mask I shown in Figure 11, using the same method as Figure 7 (a) ~ (c) (Examples 2 ~ 10) to expand the area of the main pattern, by simulation to obtain DOF, EL The graph of the result. Fig. 13 (a) to (e) are top view schematic diagrams illustrating changes in the combination of the auxiliary pattern and the main pattern. 14(a) to (f) are schematic cross-sectional views showing an example of a method of manufacturing the photomask 1.

Claims (20)

一種光罩，其特徵在於，其係於透明基板上形成有轉印用圖案者，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 於上述輔助圖案具有相對於曝光之光之代表波長之光之透過率T(%)，並且上述輔助圖案之透過光相對於上述主圖案之透過光，相對於上述代表波長之光之相位差為大致180度之光罩中， 於上述主圖案之周緣之至少一部分，具有實施了將上述遮光膜去除特定寬度之修正之轉印用圖案。 A photomask, characterized in that it is formed with a pattern for transfer on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern has a transmittance T (%) relative to the light of the representative wavelength of the exposure light, and the transmitted light of the auxiliary pattern relative to the transmitted light of the main pattern has a phase difference relative to the light of the representative wavelength In the mask of roughly 180 degrees, At least a part of the periphery of the main pattern has a transfer pattern that has been corrected by removing the light-shielding film by a specific width. 如請求項1之光罩，其中上述轉印用圖案具有產生缺陷之上述輔助圖案。The photomask of claim 1, wherein the pattern for transfer has the auxiliary pattern that causes defects. 一種光罩，其特徵在於，其係於透明基板上形成有轉印用圖案者，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 於上述輔助圖案具有相對於曝光之光之代表波長之光之透過率T(%)，並且上述輔助圖案之透過光相對於上述主圖案之透過光，相對於上述代表波長之光之相位差為大致180度之光罩中， 包含實施了修正之轉印用圖案與正常之轉印用圖案， 上述實施了修正之轉印用圖案藉由實施將上述主圖案之寬度擴展之擴展修正，相對於上述正常之轉印用圖案，上述主圖案之面積大。 A photomask, characterized in that it is formed with a pattern for transfer on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern has a transmittance T (%) relative to the light of the representative wavelength of the exposure light, and the transmitted light of the auxiliary pattern relative to the transmitted light of the main pattern has a phase difference relative to the light of the representative wavelength In the mask of roughly 180 degrees, Including the corrected transfer pattern and the normal transfer pattern, The above-mentioned corrected transfer pattern has a larger area than the above-mentioned normal transfer pattern by implementing an expansion correction that expands the width of the above-mentioned main pattern. 如請求項3之光罩，其中上述實施了修正之轉印用圖案具有產生缺陷之上述輔助圖案。The photomask according to claim 3, wherein the above-mentioned corrected transfer pattern has the above-mentioned auxiliary pattern causing defects. 一種光罩，其特徵在於，其係於透明基板上形成有轉印用圖案者，且 上述轉印用圖案包含： 直徑W1(μm)之主圖案，其包含透光部； 輔助圖案，其配置於上述主圖案之附近，且具有不被曝光裝置解像之寬度d(μm)；及 遮光部，其構成將上述主圖案與上述輔助圖案除外之區域； 上述遮光部係於上述透明基板上至少形成遮光膜而成， 於上述輔助圖案具有相對於曝光之光之代表波長之光之透過率T(%)，並且上述輔助圖案之透過光相對於上述主圖案之透過光，相對於上述代表波長之光之相位差為大致180度之光罩中， 包含實施了修正之轉印用圖案與正常之轉印用圖案， 上述實施了修正之轉印用圖案藉由實施將上述主圖案之寬度擴展之擴展修正，相對於上述正常之轉印用圖案，上述主圖案之縱橫比不同。 A photomask, characterized in that it is formed with a pattern for transfer on a transparent substrate, and The above-mentioned transfer pattern includes: The main pattern of diameter W1 (μm), which includes the light-transmitting part; The auxiliary pattern is arranged near the main pattern and has a width d (μm) that is not resolved by the exposure device; and Shading part, which constitutes an area excluding the above-mentioned main pattern and the above-mentioned auxiliary pattern; The light-shielding portion is formed by forming at least a light-shielding film on the transparent substrate, The auxiliary pattern has a transmittance T (%) relative to the light of the representative wavelength of the exposure light, and the transmitted light of the auxiliary pattern relative to the transmitted light of the main pattern has a phase difference relative to the light of the representative wavelength In the mask of roughly 180 degrees, Including the corrected transfer pattern and the normal transfer pattern, The above-mentioned corrected transfer pattern has an aspect ratio of the above-mentioned main pattern which is different from the above-mentioned normal transfer pattern by applying an expansion correction which expands the width of the above-mentioned main pattern. 如請求項1至5中任一項之光罩，其中上述輔助圖案包含相位偏移部，該相位偏移部係於上述透明基板上形成具有使曝光之光之代表波長之光相位偏移大致180度之相位特性並且具有相對於上述代表波長之光之透過率T(%)之半透光膜而成。The photomask of any one of claims 1 to 5, wherein the auxiliary pattern includes a phase shift portion formed on the transparent substrate with a light phase shift of approximately the representative wavelength of the light to be exposed It is made of a semi-transmissive film with a phase characteristic of 180 degrees and a transmittance T (%) relative to the above-mentioned representative wavelength of light. 如請求項6之光罩，其中上述輔助圖案配置於將上述主圖案之周圍介隔上述遮光部而包圍之多邊形帶之區域內。The photomask of claim 6, wherein the auxiliary pattern is arranged in an area of a polygonal band surrounded by the main pattern and surrounded by the light shielding portion. 如請求項1至5中任一項之光罩，其中上述實施了修正之轉印用圖案具有產生缺陷之上述輔助圖案。The photomask according to any one of claims 1 to 5, wherein the above-mentioned corrected pattern for transfer has the above-mentioned auxiliary pattern causing defects. 如請求項7之光罩，其中於上述多邊形帶之區域內，形成有上述遮光膜、或包含與上述遮光膜不同之材料之遮光性之補充膜。The mask of claim 7, wherein the light-shielding film or a light-shielding supplementary film containing a material different from the light-shielding film is formed in the area of the polygonal zone. 如請求項7之光罩，其係於八邊形帶之上述輔助圖案之一部分產生缺陷者。Such as the photomask of claim 7, which is defective in one of the above-mentioned auxiliary patterns of the octagonal belt. 如請求項1至5中任一項之光罩，其係於被轉印體上形成孔圖案者。Such as the photomask of any one of claims 1 to 5, which is one that forms a hole pattern on the body to be transferred. 如請求項1至5中任一項之光罩，其係用以於被轉印體上形成孤立孔圖案者。Such as the photomask of any one of claims 1 to 5, which is used to form an isolated hole pattern on the transferred body. 如請求項1至5中任一項之光罩，其中實施於上述主圖案之修正為不變更主圖案之重心位置，使主圖案之相互對向之2邊分別向遮光部側各後退相同尺寸者。Such as the mask of any one of claims 1 to 5, in which the correction implemented in the above main pattern does not change the position of the center of gravity of the main pattern, so that the two opposing sides of the main pattern are retracted to the light-shielding part side by the same size. By. 如請求項1至5中任一項之光罩，其係藉由數值孔徑NA為0.10～0.20之曝光裝置進行曝光者。Such as the photomask of any one of claims 1 to 5, which is exposed by an exposure device with a numerical aperture NA of 0.10-0.20. 如請求項1至5中任一項之光罩，其中藉由利用透過上述輔助圖案之光使透過上述主圖案之上述曝光之光於被轉印體上形成之光強度分佈變化，而使焦點深度增加。The photomask of any one of claims 1 to 5, wherein the focus is achieved by changing the light intensity distribution formed by the exposure light passing through the main pattern on the transferred body by the light passing through the auxiliary pattern Increase in depth. 如請求項1至5中任一項之光罩，其中上述轉印用圖案滿足下述式(1)， 0.8≦W1≦4.0・・・(1)。 The photomask of any one of claims 1 to 5, wherein the above-mentioned transfer pattern satisfies the following formula (1), 0.8≦W1≦4.0・・・(1). 如請求項1至5中任一項之光罩，其中上述轉印用圖案滿足下述式(2)， 0.5≦
Figure 03_image001
×d≦1.5・・・(2)。 The photomask of any one of claims 1 to 5, wherein the above-mentioned transfer pattern satisfies the following formula (2), 0.5≦
Figure 03_image001
×d≦1.5・・・(2). 如請求項1至5中任一項之光罩，其中上述轉印用圖案於將上述主圖案之中心與上述輔助圖案之寬度方向之中心的距離設為P(μm)時，滿足下述式(3)， 1.0＜P≦5.0・・・(3)。 The photomask of any one of claims 1 to 5, wherein the transfer pattern satisfies the following formula when the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is P (μm) (3), 1.0<P≦5.0・・・(3). 如請求項1至5中任一項之光罩，其中上述轉印用圖案係顯示裝置製造用圖案。The photomask according to any one of claims 1 to 5, wherein the pattern for transfer is a pattern for manufacturing a display device. 一種顯示裝置之製造方法，其包含如下步驟：使用如請求項1至5中任一項之光罩，將包含i光線、h光線、g光線之至少一者之曝光之光照射至上述轉印用圖案，於被轉印體上進行圖案轉印。A method for manufacturing a display device, which comprises the following steps: using a photomask as claimed in any one of claims 1 to 5, irradiating exposure light containing at least one of i-ray, h-ray, and g-ray to the transfer With the pattern, the pattern is transferred on the body to be transferred.
TW109109081A 2017-09-12 2018-08-24 Photomask and method of manufacturing a display device TWI710649B (en)

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101596450B1 (en) 2008-11-14 2016-02-22 주식회사 포스코 Method for filing blending ore
JP7437959B2 (en) * 2019-03-07 2024-02-26 Hoya株式会社 Modified photomask and display device manufacturing method
CN111025639B (en) * 2019-12-13 2023-04-28 歌尔光学科技有限公司 Lens shielding device of head-mounted display equipment and head-mounted display equipment
US11635680B2 (en) * 2020-08-14 2023-04-25 Changxin Memory Technologies, Inc. Overlay pattern
WO2022059202A1 (en) * 2020-09-18 2022-03-24 株式会社日立ハイテク Inspection system
CN113311669B (en) * 2021-04-14 2023-02-10 长春理工大学 Photoetching image obtaining method capable of improving imaging quality
CN117250823A (en) * 2022-06-09 2023-12-19 长鑫存储技术有限公司 Method and system for correcting photomask pattern, photomask and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154029A (en) * 2006-09-29 2008-04-02 海力士半导体有限公司 Method for repairing photomask pattern defects
TW201003302A (en) * 2008-07-04 2010-01-16 Sk Electronics Co Ltd Multilevel gradation photomask and method for repairing same
TW201219965A (en) * 2010-07-30 2012-05-16 Omron Tateisi Electronics Co Method for correcting photomask and laser processing device
US20130295494A1 (en) * 2012-05-07 2013-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for repairing photomask
TW201520683A (en) * 2013-11-19 2015-06-01 Hoya Corp Photomask, method of manufacturing a photomask, pattern transfer method and method of manufacturing a display device
TW201604643A (en) * 2014-07-17 2016-02-01 Ｈｏｙａ股份有限公司 Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05333534A (en) * 1992-05-30 1993-12-17 Sony Corp Defect correcting method for phase shift mask
JP2002351046A (en) 2001-05-24 2002-12-04 Nec Corp Phase shift mask and its design method
JP4752495B2 (en) * 2005-12-22 2011-08-17 大日本印刷株式会社 Defect correction method for photomask with gradation
CN101196682A (en) * 2006-12-05 2008-06-11 中芯国际集成电路制造(上海)有限公司 Mask plate territory for manufacturing connecting pore and its design method
JP6167568B2 (en) * 2013-03-07 2017-07-26 大日本印刷株式会社 Photomask defect correcting method and photomask manufacturing method
CN105093817A (en) * 2014-05-23 2015-11-25 中芯国际集成电路制造(上海)有限公司 Method for repairing photomask pattern
JP6335735B2 (en) 2014-09-29 2018-05-30 Hoya株式会社 Photomask and display device manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101154029A (en) * 2006-09-29 2008-04-02 海力士半导体有限公司 Method for repairing photomask pattern defects
TW201003302A (en) * 2008-07-04 2010-01-16 Sk Electronics Co Ltd Multilevel gradation photomask and method for repairing same
TW201219965A (en) * 2010-07-30 2012-05-16 Omron Tateisi Electronics Co Method for correcting photomask and laser processing device
US20130295494A1 (en) * 2012-05-07 2013-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for repairing photomask
TW201520683A (en) * 2013-11-19 2015-06-01 Hoya Corp Photomask, method of manufacturing a photomask, pattern transfer method and method of manufacturing a display device
TW201604643A (en) * 2014-07-17 2016-02-01 Ｈｏｙａ股份有限公司 Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device

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