201003302 六、發明說明： 【發明所屬之技術領域】 本發明係關於多階光罩及其修正方法。 【先前技術】 「多階光罩」係以半透光部、遮光部、透明基板所露 出之透光部構成的光罩。半透光部係使對應透射率之量的 光透射。遮光部則因遮光膜而使光完全無法透射。透光部 則係使光全部透射。 ^在多階光罩之檢查步驟中於半透光部發現異常圖案 或圖案缺損等缺陷時，即騎「缺陷之修正」。缺陷之修 正步驟，大致由以下步驟構成。首先，局部地除去半透光 部中包含缺陷之區域以使透明基板之一部分區域露出。並 次’於露出之-部分區域形纟「修正用之半透光膜」。最 後除去不需要之修正半透光臈。201003302 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a multi-step mask and a method of correcting the same. [Prior Art] A "multi-step mask" is a mask composed of a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion exposed from a transparent substrate. The semi-transmissive portion transmits light of an amount corresponding to the transmittance. The light-shielding portion makes the light completely untransmittable due to the light-shielding film. The light transmitting portion transmits all of the light. ^In the inspection step of the multi-step mask, when a defect such as an abnormal pattern or a pattern defect is found in the semi-transmissive portion, the "correction of the defect" is called. The repair step of the defect is roughly composed of the following steps. First, the region containing the defect in the semi-transmissive portion is partially removed to expose a partial region of the transparent substrate. In the second part of the exposed area, the semi-transparent film for correction is formed. Finally, the modified semi-transparent 臈 is removed.
本.兒月書中，將在光罩形成步驟中形成之半透光膜稱 為「初期半透光膜」，將為了修正缺陷而將初期半透光膜 -部分除去後所形成之半透光膜稱為「修正半透光膜」， 視需要區別兩者。 圖16⑷〜（b)及圖17(c)〜⑷係說明習知多階光罩之修 /驟的概略圖。圖！ 6(a)係顯示習知多階光罩1 〇〇之圖案 :部分。如此圖所示，多階光旱_係以透光部ι〇ι與遮 光膜1 0 2 a之圖幸102a虛生、采r ▲ 圃莱】02a與+透光膜之圖案（初期半透光 膜）構成。圖16(a)之「D 4主- l J之係表不形成於多階光罩1〇〇之初 3 201003302 期半透光膜之圖案1〇3a内的「缺陷」 圖1 6(b) ’係顯示將包含缺陷D之半透光部—部分除去 後之狀態之多階光罩之圖案的放大圖。亦即，# 了除去缺 陷D，係從圖16(a)之狀態局步地除去包含缺陷d之修正區 域叫圖中之虛線部的内部）（圖16(b))。藉由此步驟除 陷D並使透明基板之一部分露出。 ’、、 其次，以包含已除去之部分的方式形成修正半透光膜 i〇4(圖17(c))。進而’照射雷射光除去修正半透光膜之 不需要的部分㈤丨7⑷)。藉由此步驟形成修正半透光膜之 圆案104a。如上述，照射雷射光選擇性地除去修正半透光 膜之方法稱之為「雷射蒸散法」。 圖17(d)，係顯示修正半透光膜之圖案1〇钝之形成已結 束的狀態。半透光部中之缺陷D被完全地除去，包含缺陷D 之區域整體被修正半透光膜1〇4覆蓋。 此外’隨著圖案之微細化，近年來越來越重視半透光 部中之透射率的均-性。其理由在於，當為多階光罩時， 與僅由遮光部與透光部構成之習知光罩㈣交，透射率之些 微差異Μ對轉印後之A阻膜厚直接造成影響之故。一 因此’以往最重要的課題’即係「在初期半透光膜盘 修正半透光膜之間將對曝光用光之透射率調整成相等」一 參照例如專利文獻H)。亦即，只要透射率能調整並 k正成相等，則不會特別產生其他問題。 專利文獻1 :日本特開2008 —〇58943號公報 專利文獻2 :日本特開2〇〇7 — 23335〇號公報 201003302 • 【發明内容】 • 然而，在-部分多階光罩中已確認了下述現象，即不 論初期半透光膜與修正半透光膜之透射率是否正嫁地修正 成相等，仍會產生導致電路短路等之不良光阻圖案。 為了詳細調查此問題，對以習知修正方法（圖16、圖Η) 所取得之已修正多階光罩（參照圖17⑷）之戴面構造 分析。 j \ ”圖15(a)係以習知修正方法所取得之已修正多階光革 ( >…、圖17(d))之X1 — X1線截面圖，圖15(b)係使用圖15(a) 之多階光罩進行曝光及顯影步驟後所取得之光阻圖案11 “ 之截面圖。如圖15(a)所示，可知圖案邊緣部中之修正半透 光膜之膜厚較周圍厚。 上述膜厚之異常部形成於修正半透光膜之圖案邊緣部 之主要原因仍未明朗。然而，根據本案發明人之推測，當 ij ^自冑#蒸散㊉去修正半彡光膜I，修正半it光膜之邊緣 邛因叉到雷射光之能量而加熱，進而隆起所導致。上述因 雷射蒸散所產生之痕跡，在本說明書中為了方便起見稱之 為「雷射蒸散痕」。亦即，圖15(a)及圖17(c)及（d)，係顯 不/α已進行雷射蒸散之軌跡而形成有雷射蒸散痕1 〇5之狀 態。 圖丨5(匕）係顯示使用圖i5(a)之多階光罩進行曝光及顯 影所取得之光阻圖案。圖15(b)之光阻圖案之例中，與透射 v °氏之$光膜之圖案102a對應的部分中光阻之膜厚最 5 201003302 LTT光膜之圖案购對應之部分中，膜厚較避 先膜薄’而與透射率最高之精1〇1對應之部分中，： :部對應之光阻圖案邊緣部叫膜厚係= :二部分、亦即光阻圖案邊緣部U4b為透射 ： =率小的「透射率之異常部」。因此，此圖案被判^ :良光阻圖案。此外’即使於遮光膜上形成雷射蒸散带為 =會對光阻圖案之形狀造成影響…，雷射蒸散痕 衫專所會出現的情形，可知係於透光部與半透光部之邊界 區域形成雷射蒸散痕之局部膜厚部的情形。 1 比、本發明係基;^上述見解所為，其技術課題在於，於多 自光罩之修正步驟中，在必要之範圍内避免修正半透光臈 之形成時可能會出現之透射率異常部之產生。 、 、本發明之多階光罩，其缺陷已修正完畢，其特徵在於： 於透明基板上設有透光部、遮光部以及半透光部，該半透 * 系藉由半透光膜之圖案形成，該半透光膜，包含藉由 =蒸散而形成之厚膜部’且於該厚膜部設有透射率調整 此透射率吕周整區域，包含為了使缺陷修正步驟中之雷 射！散步驟中所形成之厚膜部之透射率與周圍之透射率相 等而設置的所有手段。 敕」艮據本發明之多階光罩及缺陷之修正方法，由於係調 k成不良光阻圖案之原因之厚膜部的透射率，因此能將 透射率之異常部之形成防範於未然。 201003302 【實施方式】 卩下’說明實施形態。各圖中顯示同一部位之情形， 則使用同一符號。 (第1實施形態） 圖1 (a) (b)及圖2(c)〜⑷係本發明之實施形態之多階 光罩之修正步驟圖。圖1 係gg -丄μ μ ^ 保顯不本發明之實施形態之多階 「光罩10之圖案的-部分。多階光罩1〇係以透光部i、遮光 膜之圖案23、以及初期半透光膜之圖案3a構成。此處，於 多階光罩1G之初期半透光膜之圖案3a内存在有缺陷D。 此外’㈣陷D料大分為在原本應形成半透光膜之 部^未形成半透光膜或膜厚局部較薄之缺陷（將之稱為「白 、」）U及相反之透射率局部較高之缺陷（將之稱為「里 缺陷」），但本發明之修正方法中，由於係除去含有缺陷： 區域後進行新的成膜，因此缺陷之種類並非所問。 C;…圖1(b)係顯示將含有缺陷D之半透光部之-部分（初期 半透光膜之-部分）除去後之狀態之多階光罩之圖案的放大 :。亦即’為了除去缺陷D ’係從圖i⑷之狀態部分地除去 含有缺陷〇之修正區域R2(圖中虛線部之内部）（圖卟））。 藉由=驟除去缺陷D，且使透明基板之-部分露出。 人，以包含已除去之部分之方式形成修正半透光膜 U旦在此之前，參照圖3說明本發明之修正半透光膜之形 成方法。 圖3(a)係表示一邊將大小不同之能量密度㈣2 7 201003302 之田射光照射於修正半透光膜上一邊使照射範圍依序移動 狀〜、的圖。圖3⑻及⑷分別係圖3(a)之X2—X2線及Y1 一 Y 1線截面圖。 此外如圖3(a)所示，雷射光之照射區域通常係矩形， 亦邊脈衝照射雷射光一邊使之依序移動，但不限定於 此方法。 本& S之貫施形態之修正半透光膜之雷射蒸散步驟 ^少針對可能成為圖案異常之原因之重要區域，係以 二雷射光所使用之能量密度小之能量密 當將習知雷射蒸散之照射能量設…cm2] 時，可如式（3)所表示。 I〇Sl〗>I2. . · · .(3) 4 2 3(a)〜(C)之結果’係顯示藉由能以較小能量密卢進 仃雷射蒸散來使雷 罕乂 J月匕里山度進 十二、政痕之大小較習知小之情形。 '、即，習知之雷射蒸散中，如圖 雖沿已推 > ; 闯1 /(d)及圖15(a)所示’ 1πς 仃雷射蒸散之軌跡形成有較大之+射t 4 t 105 ’但第1實施形態之修正半透光：大之…散痕 與習知同等+透切之形成步驟中，係以 寺A較其低之能量來声昭 形成或开j成_ 士 .....田射光，因此即使不 /或大之雷射蒸散瘕 異常圖案之原因的雷m… 會形成大到會成為 之能量密产 “、、：艮。換έ之，藉由以相對較低 里在度進行雷射蒸勒 g平乂低 之部位避免形成大到會成為光阻圖；圖案異常會成為問題 射蒸散痕，藉此解決問題：。案異常之原因之較大雷 藉由如上述原理，針對所需之區域以相對較小之能旦 201003302 密度進行修正半透光膜之雷射蒸散。 如圖2(c)所示，於遮光膜之圖案&上形成修正羊透光 膜/，進而照射較習知低之能量密度^j/咖2]、 cm ](其中，Ii>l2)之雷射光，而可藉由除去修正半透光膜* 之不需要之部分來形成修正半透光膜之圖案牦(圖2⑷卜 、此外，修正半透光膜4之形成方法，最好係氣相成長 法特別疋化學氣相成長法或物理氣相成長法。化學氣相 成長法之情形，最好係A CVD(化學氣相成長）法等能於特定 ，區域局部性地堆積之方法。光㈣裝置與其他成膜農置 較有可今易變更光之照射次數（脈衝頻率）或光之照 度等之條件的優點。 '' 圖2⑷係顯示修正半透光膜之圖案乜之形成已結束的 “、，此圖所示’半透光部中之缺陷D已被完全除去。 命納上’本發明之實施形態之雷射蒸散之 表1所示。 「 [表1】 照射區域 照射能1密摩 __ 區域I ------- 玉仙 /又 — 中 _ 區域II —.. 微弱〜低 开2Γ、區域1係指修正半透光膜並未孤立、異常圖案之 成為嚴重之問題的區域，區域π =極及沒極電極形成部等、於透光部上孤立 、之圖案之邊緣部等，當形成有異f圖案時可能產 9 201003302 生問題之區域（參照圖2(d))。 亦即，圖2(c)之例中， ^ ^ 小（Ιι，〗2)之理由在於，視 $费度切換於不同之兩個大 散痕之大小亦不同之故^狀態不同而可容許之雷射蒸 之邊界形成雷射蒸散痕， 便於+透光部與遮光部 遮蔽曝光用光，因此即使於1 ^部正如其名稱所示會 部，對曝光圖案產生之景，塑:近形成雷射蒸散痕之厚膜 光部上孤立形成之半透光膜之圖案置=:此:當將於透 施以雷射蒸散時，t藉由雷射蒗散、f正半透光膜並 g* …政痕形成局部之厚膜部 時，可知即會對曝光圖案產生嚴重之影響。 因上述理由，在圖2(c)中 ^ χ 係考里待修正圖案而切換兩 奴能量密度，以對圖案形成後之未來將進行之配線形 成步驟等中可能產生短路之重要部分(低能量雷射照射部Μ 使用更微弱之能量密度進行雷射蒸散，但若無需要，亦可 均以相同能量密度(不過，以較習知技術相對低之能量密度 進行照射）進行雷射蒸散。 圖4(a)係圖2(d)之Χ3—Χ3線放大截面圖。其圖示了於 玻璃基板露出之透明部1上形成遮光膜之圖案以與修正半 透光膜之圖案4a，於與透光部1之邊界區域一部分形成低 能1雷射照射部K。又，如該圖所示，係從玻璃基板之背面 側照射曝光用光。 圖4(b)係使用圖4(a)之多階光罩進行曝光及顯影後之 光阻圖案的截面圖。圖4(b)之光阻圖案之例中，與透射率 最低之遮光膜之圖案2a對應的部分中光阻之膜厚最厚，與 201003302 修正半透光膜之圖案4a對應之部分中，膜厚較遮光膜薄， 而與透射率最高之透明部1對應之部分中，光阻膜厚完全 被除去，不過，與於半透光膜之圖案邊緣部形成之低能量 照射部對應之光阻圖案邊緣部14b中，厚膜係圓滑地減少。 如上所述，本發明之實施形態之多階光罩之修正方 法，係於修正半透光膜之形成步驟中，藉由在接近盘透明 ,r 部之邊界的部分設置低能量雷射照射部，而能避免於光阻 圖案邊緣部形成「透射率之異常部（e" i5(b)ii4b)」。 (第2實施形態） 圖5⑷〜（b)及圖6(c)〜（d)係第2實施形態之多階光罩 之缺陷修正步驟圖。圖5⑷及（b)係顯示第2實施㈣之多 階光軍1〇之圖案的一部分，但由於與圖^)，⑻㈣，因 此省略說明。 ’如圖6⑷所示’於遮光膜之圖案2a上形成修正 +透先膜4,進而照射雷射光，而可藉由除去修正 :二不需要之部分來形成修正半透光膜之圖案h(圖A)): 如°亥圖所不’雷射光之照射區域通常係矩形，雖— 邊脈衝照射雷射光一邊使之依序移動係 定於此方法。 、彳-不限 在此步驟結束後，即於修正半透光膜中已進 政之部位形成雷射蒸散痕5(圖6(d))。 - ,'7⑷係顯示進行修正半透光臈之圖案4 形。如该圖所不，特定出雷射蒸散痕$中形成月 之部位，並藉由對該部分照射微細之雷射光L 、吊圖案 田射先L，以於雷射墓 201003302 邛分形成—個或複數個狹縫ό構成的 敢很 此狹縫部s僅設於需要部位 圖“系顯示狹縫部8之放大圖。雷射蒸散痕5由於膜 性地變厚，透射率與周圍相較局部性地較低，因此 光膜近似之性質。另-方面，狹縫…有能供 ;=通過之解析度極限以下之間隔，具有可局部性地 ^ Ψ ^ m^ 射率的作用。藉由於雷射蒸散痕5 5又置狹縫。"即可抑制異常圖案之形成。 電』缝部S，最好係設於例如薄膜電晶體之源極 ==電極般於透明基板上設有孤立之半透射膜之圖 案孤立圖案部的端部等，當產 即會局部性地下降之部位。孤立圖案部;放 痕5而容易形成里4 ε Τ會因田射蒸散 光膜之附近形成有雷射二目反地，即使於遮光膜上或遮 有雷射蒸散痕由於與於孤立圖案部形成 成，因此是否要钟/lt 不易產生異常圖案之形 判斷。 I置狹縫，可依據是否會產生異常圖案來 卜為了除去缺陷D而使透明基板之一八命 在堆積修正半透光膜時，最好係以 :刀路出後， 區域稍微寬廣之區域、亦即被覆露出：=膜之 如此可容^保冗n i之方式予以堆積。 圖9⑷係圖7(e)所示之χ2 — 示了於透明基板露出 、，.之放大截面圖。係圖 修正半透光膜々I圖；？部1上形成遮光膜之圖〜 圖案4a，且於與透光部1之邊界區域之 12 201003302 至少一部分形成有狹縫部s。又，如誃 板之背面側照射曝光用光。 〆10 $ $«透明基 本2 * (。）係使㈣夕階光罩進行曝光及顯影後所取得之 、’阻〃 ® 9(b)之光阻圖案之例中，與透射 光膜之圖案〜對應的部分中光阻之臈厚最厚，與修正半； 光f 部分中，膜厚較遮光膜薄，而與^ 率最咼之透明部1對岸之a卩八φ . 、 Τ應之邛刀中，光阻膜厚完全被除去， 不過與於修正半透光膜之圖案邊緣部形成之狹縫部 =之光阻圖案邊緣部14b中，厚膜係從階段狀變化成_ 狀。 如上所述，本發明之實施形態之多階光罩之修正方 法’係於修正半透光膜之形成步驟中，藉由在修正半透光 膜之端=置狹縫部8，而在曝光時使透射率在狹縫部S局 部性地提咼。亦即，圖索錄g尨 圖案轉印後之光阻膜，係在與透光部 之邊界附近形成較薄，從半透光部至透光部之透射率呈和 ί. 缓的變化。因此’可避免在修正半透光膜之有效區域周緣 部產生之因修正半透光膜之形成時導致的透射率異常，能 避免轉印曝光時之光阻膜厚之異常（於光阻圖案邊緣部匕 「透射率之異常部（圖16(b)114b)j 。 此外，狹縫部S之透射率與其周圍之透射率，最好係 將狹缝寬度調整成在曝光用光之波長上儘可能相等。 (第3實施形態） 圖10⑷〜（b)及H U⑷〜⑷係第3實施形態之多階光 罩之缺陷修正步驟圖。s 10⑷及（b)係顯示第3實施形態之 13 201003302 多階光罩1 〇之圖案的一 因此省略說明。 但由於與圖1⑷，㈨相同，In the book of the Moon, the semi-transmissive film formed in the mask forming step is referred to as an "initial semi-transmissive film", and the semi-transparent film formed by removing the initial semi-transmissive film - in order to correct the defect. The light film is called a "corrected semi-transparent film", and the two are distinguished as needed. 16(4) to (b) and Figs. 17(c) to (4) are schematic views showing the repair of the conventional multi-step mask. Figure! 6(a) shows the pattern of the conventional multi-order mask 1 :: part. As shown in the figure, the multi-step light drought _ is based on the light-transmitting part ι〇ι and the light-shielding film 1 0 2 a. Fortunately, 102a is imaginary, adopting r ▲ 圃 】] 02a and + light-transmissive film pattern (initial semi-transparent Light film). Figure 16 (a) "D 4 main - l J is not formed in the multi-level mask 1 3 3 3 201003302 period semi-transparent film pattern 1 〇 3a "defect" Figure 1 6 (b The 'display shows an enlarged view of the pattern of the multi-step mask in which the semi-transmissive portion containing the defect D is partially removed. That is, #excluding the defect D, the correction region including the defect d is called the inside of the broken line portion in the figure from the state of Fig. 16 (a) (Fig. 16 (b)). By this step, D is removed and a portion of the transparent substrate is exposed. Then, the modified semi-transmissive film i〇4 is formed so as to include the removed portion (Fig. 17(c)). Further, the laser beam is irradiated to remove an unnecessary portion (5) 丨 7 (4) of the modified semi-transparent film. By this step, a round wafer 104a for correcting the semi-transmissive film is formed. As described above, the method of selectively removing the modified semi-transmissive film by irradiating the laser light is referred to as "laser evapotranspiration". Fig. 17 (d) shows a state in which the formation of the blunt pattern of the modified semi-transparent film is completed. The defect D in the semi-transmissive portion is completely removed, and the entire region including the defect D is covered by the modified semi-transmissive film 1〇4. Further, with the miniaturization of the pattern, the uniformity of the transmittance in the semi-transmissive portion has been increasingly emphasized in recent years. The reason for this is that when it is a multi-step mask, a slight difference in transmittance is directly affected by the conventional mask (four) composed of only the light-shielding portion and the light-transmitting portion, which directly affects the thickness of the A-resistance film after the transfer. Therefore, the "most important problem in the past" is that "the transmittance of the exposure light is adjusted to be equal between the initial semi-transmissive disk-corrected semi-transmissive films". For example, Patent Document H). That is, as long as the transmittance can be adjusted and k is equal, no other problems are particularly caused. Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-58343 Patent Document 2: Japanese Patent Laid-Open No. Hei 2-7-23335A No. 201003302 • SUMMARY OF INVENTION • However, it has been confirmed in the -part multi-step mask The phenomenon is that regardless of whether the transmittance of the initial semi-transmissive film and the modified semi-transmissive film is corrected to be equal to each other, a defective photoresist pattern causing a short circuit or the like is generated. In order to investigate this problem in detail, the wearing structure analysis of the modified multi-step mask (see Fig. 17 (4)) obtained by the conventional correction method (Fig. 16, Fig. 。) is analyzed. j \ ” Fig. 15(a) is a cross-sectional view of the modified multi-order photo leather (>..., Fig. 17(d)) obtained by the conventional correction method, and Fig. 15(b) is a drawing A cross-sectional view of the photoresist pattern 11 obtained after the exposure and development steps of the multi-step mask of 15(a). As shown in Fig. 15 (a), it is understood that the thickness of the modified semi-transmissive film in the edge portion of the pattern is thicker than the periphery. The reason why the abnormal portion of the film thickness is formed on the edge portion of the pattern of the modified semi-transmissive film is still unclear. However, according to the speculation of the inventor of the present invention, when ij ^ 胄 蒸 蒸 去 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正 修正The above-mentioned traces due to laser evapotranspiration are referred to as "laser evaporation marks" for convenience in this specification. That is, Fig. 15 (a) and Figs. 17 (c) and (d) show that the laser evapotranspiration is formed by the trajectory of the laser evapotranspiration. Fig. 5 (匕) shows a photoresist pattern obtained by exposure and development using the multi-step mask of Fig. i5(a). In the example of the photoresist pattern of FIG. 15(b), the film thickness of the photoresist in the portion corresponding to the pattern 102a of the light film transmitted by v° is 5: 201003302. In the portion corresponding to the thin film of the first film and corresponding to the finest transmittance 1〇1, the edge portion of the photoresist pattern corresponding to the : part is called the film thickness system =: the two portions, that is, the edge portion U4b of the photoresist pattern is transmitted. : = "Anomalous part of transmittance" with a small rate. Therefore, this pattern is judged as: a good photoresist pattern. In addition, even if the formation of a laser evapotranspiration on the light-shielding film has an effect on the shape of the photoresist pattern, the situation of the laser evapotranspiration can be seen at the boundary between the light-transmitting portion and the semi-transmissive portion. The region forms a local film thickness portion of the laser vapor scavenging mark. 1 ratio, the basis of the present invention; ^ the above-mentioned findings, the technical object is to avoid the abnormality of the transmittance which may occur when the formation of the semi-transparent enamel is corrected within the necessary range in the correction step of the multi-photomask Produced. The multi-step mask of the present invention has been modified, and is characterized in that: a transparent portion, a light-shielding portion and a semi-transmissive portion are provided on the transparent substrate, and the semi-transmissive film is made of a semi-transparent film. Patterning, the semi-transmissive film comprising a thick film portion formed by evapotranspiration and having a transmittance adjusting the transmittance in the thick film portion, including a laser in order to make the defect correction step ! All means of setting the transmittance of the thick film portion formed in the scattering step to be equal to the surrounding transmittance. According to the multi-step mask and the method for correcting the defect of the present invention, since the transmittance of the thick film portion is adjusted to be a defective photoresist pattern, the formation of the abnormal portion of the transmittance can be prevented. 201003302 [Embodiment] The following describes the embodiment. The same symbol is used when the same part is displayed in each figure. (First Embodiment) Figs. 1(a) and (b) and Figs. 2(c) to 4(4) are diagrams showing a modification procedure of a multi-step mask according to an embodiment of the present invention. Fig. 1 is a gg-丄μ μ ^ multi-step "part of the pattern of the reticle 10 of the embodiment of the present invention. The multi-step mask 1 is a light-transmitting portion i, a pattern 23 of a light-shielding film, and The initial semi-transmissive film pattern 3a is formed. Here, there is a defect D in the pattern 3a of the initial semi-transmissive film of the multi-step mask 1G. In addition, the '(four) trapped D material is largely divided into a semi-transparent film. The part ^ does not form a semi-transparent film or a defect in which the film thickness is partially thin (referred to as "white,") U and a defect in which the transmittance is locally higher (referred to as "inside defect"), but In the correction method of the present invention, since a new film formation is performed after removing the defect-containing region, the type of the defect is not asked. C; Fig. 1(b) shows an enlargement of the pattern of the multi-step mask in which the portion containing the semi-transmissive portion of the defect D (the portion of the initial semi-transmissive film) is removed. That is, the correction region R2 containing the defect ( (the inside of the broken line portion in the drawing) (Fig. )) is partially removed from the state of Fig. i (4) in order to remove the defect D ′. The defect D is removed by = and the portion of the transparent substrate is exposed. The human, the modified semi-transmissive film is formed in such a manner as to include the removed portion. Before this, a method of forming the modified semi-transmissive film of the present invention will be described with reference to FIG. Fig. 3(a) is a view showing the irradiation range sequentially shifted while irradiating the field of the energy density (four) 2 7 201003302 of different sizes on the modified semi-transmissive film. 3(8) and (4) are cross-sectional views taken along lines X2-X2 and Y1-Y1 of Fig. 3(a), respectively. Further, as shown in Fig. 3(a), the irradiation area of the laser light is generally rectangular, and the laser light is irradiated while sequentially irradiating the laser light, but the method is not limited thereto. The laser evapotranspiration step of the modified semi-transparent film of the present & S mode is less important for the area where the pattern may be abnormal, and the energy density of the energy used for the two lasers is small. When the irradiation energy of the laser evapotranspiration is set to ... cm2], it can be expressed by the formula (3). I〇Sl〗>I2. . . . . (3) 4 2 3(a)~(C) The result shows that Rayham J can be made by evapotranspiration with less energy. In the month of the month, the mountain is in the 12th, and the size of the political mark is smaller than the conventional one. ', that is, in the conventional laser evapotranspiration, as shown in the figure below, the trajectory of the '1πς 仃 laser evapotranspiration shown in Fig. 15(a) and Fig. 15(a) is formed with a larger + shot t 4 t 105 'But the modified semi-transmission of the first embodiment: the big one... the scattered mark is the same as the conventional one + the transparent cutting step is formed by the lower energy of the temple A.士.....Field light, so even if it is not/or the large laser evades the abnormal pattern of the ray m... it will form a large capacity to become a dense production ",,: 艮. In a relatively low degree of internal gravity, the portion of the laser that is low in level is prevented from forming a large photoresist pattern; the pattern abnormality may become a problem of evaporating and scattering, thereby solving the problem: the cause of the abnormality is larger. By using the above principle, the laser evapotranspiration of the semi-transparent film is corrected for the required area with a relatively small density of 201003302. As shown in Fig. 2(c), the pattern is formed on the light-shielding film & Correcting the sheep's light-transparent film/, and then irradiating the laser light with a lower energy density than the conventionally known energy density ^j/ coffee 2], cm] (where Ii>l2) Correcting the unnecessary portion of the semi-transmissive film* to form the pattern of the modified semi-transmissive film (Fig. 2 (4), and further, the method of forming the modified semi-transparent film 4, preferably the vapor phase growth method, especially the chemical vapor phase The growth method or the physical vapor phase growth method. In the case of the chemical vapor phase growth method, it is preferable to use a method such as A CVD (Chemical Vapor Growth) which can be locally deposited in a specific region. The light (4) device and other film forming farmers There is an advantage that the conditions of the number of times of irradiation of light (pulse frequency) or the illuminance of light can be changed. '' Fig. 2(4) shows that the formation of the pattern of the modified semi-transparent film has been completed. The defect D in the semi-transmissive portion has been completely removed. The laser evapotranspiration of the embodiment of the present invention is shown in Table 1. "[Table 1] Irradiation area irradiation energy 1 Mimo__ Area I ------- Yuxian / _ _ _ area II —.. weak ~ low open 2 Γ, area 1 refers to the area where the semi-transparent film is not isolated, the abnormal pattern becomes a serious problem, the area π = pole and electrodeless electrode forming portion, etc., isolated on the light transmitting portion, the edge of the pattern Etc., when an irregular f pattern is formed, it is possible to produce an area where the problem occurs (see Fig. 2(d)). That is, in the example of Fig. 2(c), ^ ^ small (Ιι, 〗 2) is based on According to the difference between the size of the two large scattered marks, the size of the two large scattered marks is different, and the boundary of the laser can be allowed to form a laser evaporation mark, which is convenient for the light-transmitting part and the light-shielding part to shield the exposure light. Therefore, even in the case where the 1^ part is the part indicated by the name, the pattern of the exposure pattern is generated, and the pattern of the semi-transparent film formed on the thick film portion of the near-formed laser evaporation mark is: When the laser is to be evaded by the laser, the partial thick film portion is formed by the laser scatter, the f-positive semi-transmissive film, and the g] ..., which may cause a serious influence on the exposure pattern. For the above reasons, in Fig. 2(c), the pattern to be corrected is switched, and the energy density of the two slaves is switched to form an important part of the short circuit that may occur in the wiring forming step in the future after the pattern formation (low energy). The laser illuminating unit 雷 performs laser evapotranspiration using a weaker energy density, but may perform laser evapotranspiration at the same energy density (however, at a relatively low energy density compared to conventional techniques) if not required. 4(a) is an enlarged cross-sectional view of the Χ3-Χ3 line of Fig. 2(d), which shows a pattern of a light-shielding film formed on the transparent portion 1 exposed from the glass substrate to correct the pattern 4a of the semi-transmissive film. A part of the boundary region of the light transmitting portion 1 forms a low-energy laser irradiation portion K. As shown in the figure, the exposure light is irradiated from the back side of the glass substrate. Fig. 4(b) uses Fig. 4(a) A cross-sectional view of a photoresist pattern after exposure and development by a multi-step mask. In the example of the photoresist pattern of FIG. 4(b), the film thickness of the photoresist is the highest in the portion corresponding to the pattern 2a of the light-shielding film having the lowest transmittance. Thick, in the portion corresponding to the pattern 4a of the semi-transparent film of 201003302, The thickness is thinner than the light-shielding film, and in the portion corresponding to the transparent portion 1 having the highest transmittance, the thickness of the photoresist film is completely removed, but the photoresist corresponding to the low-energy irradiation portion formed at the edge portion of the pattern of the semi-transmissive film is formed. In the pattern edge portion 14b, the thick film is smoothly reduced. As described above, the multi-step mask correction method according to the embodiment of the present invention is in the step of forming the modified semi-transmissive film, and is transparent in the proximity of the disk. A low-energy laser irradiation portion is provided in a portion of the boundary of the r portion, and an "abnormal portion of transmittance (e" i5(b) ii4b)" can be prevented from being formed at the edge portion of the photoresist pattern. (Second embodiment) Fig. 5 (4) (b) and Figs. 6(c) to (d) are diagrams showing the defect correction steps of the multi-step mask of the second embodiment. Figs. 5(4) and (b) show the pattern of the multi-step light army of the second embodiment (4). Part of it, but due to the figure ^), (8) (four), the description is omitted. 'As shown in Fig. 6 (4), a modified + transparent film 4 is formed on the pattern 2a of the light-shielding film, and further, the laser light is irradiated, and the pattern h of the modified semi-transparent film can be formed by removing the correction: the unnecessary portion ( Figure A)): If the area of the laser light is not rectangular, it is usually rectangular, although the pulse is irradiated with the laser light and the system is moved in this way. , 彳 - not limited After the end of this step, the laser evapotranspiration 5 is formed in the modified portion of the semi-transparent film (Fig. 6(d)). - , '7 (4) shows the pattern of the modified semi-transparent 4 pattern. As shown in the figure, the part of the moon is formed in the laser evapotranspiration mark, and by irradiating the part with the fine laser light L and the hanging pattern field L, the laser tomb 201003302 is formed into a part. Or a plurality of slits ό 敢 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 狭缝 需要 需要 需要 需要 需要 需要 需要 需要 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷The ground is lower, so the light film is similar in nature. On the other hand, the slit has energy supply; = the interval below the resolution limit, which has a localized ^ m ^ m ^ rate. The evaporating scatter 5 5 is further provided with a slit. It is possible to suppress the formation of an abnormal pattern. The electric sew portion S is preferably provided on a transparent substrate such as a source of a thin film transistor == an electrode. The pattern of the semi-transmissive film is the end portion of the isolated pattern portion, etc., which is partially lowered when produced. The isolated pattern portion; the release 5 is easy to form the inner 4 ε Τ, and the ray is formed near the field evapotranspiration film. Shooting two eyes against the ground, even on the light-shielding film or covered with laser evaporation marks due to The vertical pattern portion is formed, so whether or not the clock/lt is less likely to cause the shape of the abnormal pattern to be judged. I. The slit is provided, and depending on whether or not an abnormal pattern is generated, one of the transparent substrates is placed in the stacking correction half in order to remove the defect D. In the case of a light-transmissive film, it is preferable to: after the knife path is exited, a region which is slightly wider in the region, that is, a cover is exposed: = the film can be stacked in such a manner as to be redundant. Fig. 9(4) is shown in Fig. 7(e) χ χ — — — — — — — — — — — — — — — 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明12 201003302 of the boundary region is formed with at least a portion of the slit portion s. Further, for example, the back side of the fascia plate illuminates the exposure light. 〆10 $ $«Transparent basic 2 * (.) After exposure and development of the (4) ray mask In the example of the photoresist pattern of the 'resistance ® 9 (b), the thickness of the photoresist is the thickest in the portion corresponding to the pattern of the transmitted light film, and the correction half is half; It is thinner than the light-shielding film, and it is opposite to the transparent portion 1 of the ^ ratio, which is a 卩 φ. In the trowel, the thickness of the photoresist film is completely removed, but in the edge portion 14b of the photoresist pattern formed by the slit portion of the pattern edge portion of the modified semi-transmissive film, the thick film is changed from the step shape to the _ shape. The method for correcting the multi-step mask of the embodiment of the present invention is in the step of forming the modified semi-transmissive film, by making the slit portion 8 at the end of the modified semi-transparent film, and making it at the time of exposure. The transmittance is locally raised in the slit portion S. That is, the photoresist film after the transfer of the pattern is formed thinner from the boundary of the light transmitting portion, from the semi-transmissive portion to the light transmitting portion. The transmittance of the portion is in a gentle change. Therefore, it is possible to avoid the abnormality of the transmittance caused by the correction of the formation of the semi-transparent film in the peripheral portion of the effective region of the semi-transparent film, and to avoid the transfer exposure. The abnormality of the photoresist film thickness (the abnormal portion of the transmittance (Fig. 16 (b) 114b) j at the edge portion of the photoresist pattern. Further, it is preferable that the transmittance of the slit portion S and the transmittance thereof are adjusted so as to be as equal as possible to the wavelength of the exposure light. (Third Embodiment) Figs. 10(4) to (b) and H U(4) to (4) are diagrams showing the defect correction procedure of the multi-step mask of the third embodiment. s 10(4) and (b) show the pattern of the 13 201003302 multi-order mask 1 第 in the third embodiment, and thus the description thereof will be omitted. But because it is the same as Figure 1 (4), (9),
其久’雖以包令_ p I *去之部分之方式形成修正半透光 膜4’但在之前，來昭 > ”、、圖2說明本發明之修正半透光膜之 开，成方法。 半透==::ίΓΓ玻璃基板上形成有修正 如此圖所示，右形屮付 开/成修正半透光膜4時，最 寬廣之範圍進行堆積，1 取初係在最 >、-人一邊使中心大致一致、一 略窄之範圍堆積，使摊接p 遭在 〃 範圍階段性地變化而陸續進行堆 貝施孔相成長法時’使用光cvd裝置之情形 堆積範圍和緩地變窄，係較為容易。 ，使 如此，如圖12(a)至圖12(c)所示，於修正 緣部整體形成階級部G。在階級部 '先Μ之周 之邊界透射率即越高。階級呷G雖合* 、接近與透光部 而使階段之粗度不」曰因成膜時之掃描次數 J但不—定必須是圓滑之圓錐此^ 可係較粗之階段狀。另-方面，於階級部G之内"亦 中央部C’係先調整膜厚等之條件，以使對曝光裝置形成之 用光之波長的透射率與初期半透光膜相同。 之曝光 I5白級部中，由於透射率會呈階段性變化 印後之光阻膜其光阻膜厚亦係越接近與透光部^案轉 ^ : 先部之透射率呈和緩的變化 因此’可避免在修正半透光膜之有效區域周緣部產=因 14 201003302 能避免轉印曝 修正半透光膜之形成時導致的透射率異常 光時之光阻膜厚之異常。 上形成具有階級部 光除去修正半透光 膜4之圖案4a(圖 如圖11(c)所示，於遮光膜之圖案2a G之修正半透光膜4,進而藉由照射雷射 膜4之不需要的部分’而形成修正半透光 11(d))。 料’雖於修正半透光膜已進行雷射蒸散之部位，形For a long time, the modified semi-transmissive film 4' is formed in such a manner that the portion of the package _p I * is removed. However, before, the modified semi-transparent film of the present invention is described. Method: Semi-transparent ==:: ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ - When the person makes the center roughly the same, a narrower range is piled up, and the spread p is gradually changed in the range of the 而, and the pile-up hole-phase growth method is successively carried out. 'When the light cvd device is used, the stacking range is gentle. As shown in Fig. 12(a) to Fig. 12(c), the step portion is formed on the entire edge portion of the correction edge portion. High. Although the class 呷G is close to and close to the light-transmitting portion, the thickness of the stage is not "due to the number of scans when the film is formed, but not - it must be a rounded cone. This can be a thicker stage. On the other hand, in the class portion G, the central portion C' first adjusts the conditions such as the film thickness so that the transmittance of the wavelength of light used for the exposure device is the same as that of the initial semi-transmissive film. In the white-level portion of the exposure I5, since the transmittance will change stepwise, the photoresist film thickness of the post-printing film is also closer to the transmittance of the light-transmitting portion: the transmittance of the first portion is gentle. 'It can avoid the correction of the peripheral portion of the effective area of the semi-transparent film. = 14 201003302 It is possible to avoid the abnormality of the photoresist film thickness when the transmittance is abnormal light caused by the formation of the semi-transparent film. Forming a pattern 4a having the class portion light removing correction semi-transmissive film 4 (as shown in FIG. 11(c), the modified semi-transmissive film 4 in the pattern 2a G of the light shielding film, and further irradiating the laser film 4 The unnecessary portion 'forms the modified semi-light transmission 11(d)). Material', although the modified semi-transparent film has been subjected to laser evapotranspiration,
成雷射蒸散痕5，但並不進行雷 ^ 田射蒸放，而不會於殘留階級 # G之°卩位形成雷射蒸散痕5。 為了除去缺陷D而使透明基板之—部分露出後 =正半透光膜時，最好係以被覆較初期半透光膜之區域 i:寬廣之區域、亦即被覆露出部之方式予以堆積。如此 可容易確保冗餘性，且可容易確保階級部6之區域。 圖11(d)係顯示修正半透光膜之圖案钩之形成已結束 的狀態。如此圖所示，半透光部中之缺陷D已被完全除：。 如上所述’階級部G雖係於修正半透光膜4之成臈後立即 形成於周緣部整體，^日^目f面& ^彳—了視的要情形，藉由雷射光對不需 要之部分進行雷射蒸散。圖u(d)係顯示於修正半透光膜之 圖案4a之。[W刀殘留有階級部G。不過，亦可不於修正半 透光膜4之形成時形成冗餘區域，而在規定了充 成膜範圍後，省略雷射蒸散步驟。 刀之 圖13(a)係圖i1(d)所示之χ3—χ3線之放大截面圖。其 圖不了於玻璃基板露出之透明部i上形成遮光膜之圖案。 與修正半透光膜之圖案4a，於與透光部〗之邊界區域—部 15 201003302 分形成階級部G。又’如該圖所示’係從玻璃基板之背面側 照射曝光用光。 圖13(b)係使用圖i3(a)所示之多階光罩進行曝光及顯 影後之光阻圖案的截面圖。圖1 3 (b )之光阻圖案之例中，與 透射率最低之遮光膜之圖案2a對應的部分中光阻之膜厚最 厚，與修正半透光膜之圖案4a對應之部分中，膜厚較遮光 膜薄’而與透射率最高之透明部1對應之部分中，光阻膜 厚完全被除去’不過’與於半透光膜之圖案邊緣部形成之 階級部G對應之光阻圖案邊緣部14b中，厚膜係從階段狀 變化成圓錐狀。 如上所述，本發明之實施形態之多階光罩之修正方 法，係於修正半透光臈之形成步驟中，藉由設置越接近與 透明#之邊界透射率即越高之階級部，而可避免於光阻圖 案邊緣部形成「透射率之異常部（圖15(b)ll4b)」。 -卜，不 j Γ白-双邱M又卜之其 他區域調整成與初期半透光膜之透射率實質相等。 ’、 如上所述’將兩者之透射率調整成相等且於圖案 部設置階級部’藉此能使丰锈 、 使牛透先°卩之透射率在圖案邊緣部 以外之部分大致成為均一， 而此防止透射率之異常部之形 成0 y 此時，前述階級部中本 為越朝μ 料，最好係構成 ~柯朝向端部則越薄。作a 為用以調整透射率之最有效方法 之’可舉出調節膜厚之方、、表,,Α. ^ 早之方去。此外’膜厚與透射率之μ 係雖係由式（1)及式ί2彳矣— 坪兴处耵年之關 '()切）表π ’但就定性而言，膜厚越薄透射 16 201003302 率即越高，膜厚越厚透射率則越低。 將單位臈厚L〇時之透射率設$ τ〇，將透射率τ〇時之、、曲 度設為D〇，將膜厚L時之濃度設為D時，則可表示為：-〇〇= - log T〇 .....⑴ D=(L/L0) . D〇 .....(2) 此外’亦可視需要’進一步包含藉由例如雷射蒸散 之方法選擇性地除去修正半透光膜之―部分的步驟 雷射蒸散等進行修正半透光膜讀去後，則案邊緣= 膜厚會，，但可藉由設置階級部避免不良光阻圖案之產 生。此意義，係指若包含在不形成不良光阻圖案之範圍内 選擇性地除去修正半透光膜之—部分的步驟，亦不 問題。 《展王 一⑴述仏正半透光膜之端部，最好係具有源極及汲 極之薄膜電晶體之源極電極及汲極電極形成區域、以及其 他孤立於透光部上之修正半透光膜之圖案之邊緣部。 本發明係關於多階光罩之製造，特別是能提供可提高 缺陷之修正精度之際述，此點在產業上之可利用性極大。 【圖式簡單說明】 圖1(a)〜（b)係第1實施形態之多階光罩之缺陷修正步 驟圖。 圖2(c)〜（d)係第1實施形態之多階光罩之缺陷修正步 驟圖。 圖3(a)係表示—邊將大小不同之能量密度lb I2[J/cm2] 17 201003302 之雷射光照射於修正半透光膜上一邊使照射範圍依序移動 之狀態的圖。圖3(b)及（c)分別係圖3 (a)之X2 — X2線及Y1 —Y1線截面圖。 圖4(a)係圊2(d)之X3—X3線之放大截面圖。圖4(b) 係使用圖4(a)之多階光罩進行曝光及顯影後之光阻圖案的 截面圖。 圖5(a)〜（b)係第2實施形態之多階光罩之缺陷修正步 驟圖。 圖6(c)〜（d)係第2實施形態之多階光罩之缺陷修正步 驟圖。 圖7(e)係第2實施形態之多階光罩之缺陷修正步驟 圖。特別疋顯示進行修正半透光膜之圖案4 a之形成的步驟 圖。 圖8係狹縫部s之放大圖。 圖9(a)係圖7(e)之X2—X2線之放大截面圖。圖9(b) 係使用圖9(a)之多階光罩進行曝光及顯影後之光阻圖案的 截面圖。 圖10(a)〜（b)係第3實施形態之多階光罩之缺陷修正步 驟圖。 圖11(c)〜（d)係第3實施形態之多階光罩之缺陷修正步 驟圖。 圖12(a)係顯示於平坦之玻璃基板上形成有修正半透光 膜4之狀態的俯視圖。圖12(b)及（c)分別係圖12(勾之— Υ1線及Χ2 — Χ2之線截面圖。 201003302 圖14(a)係圖11(d)所示之X3 — X3線之放大載面圖。圖 14(b)係使用圖14(a)所示之多階光罩進行曝光及顯影後之 光阻圖案的截面圖。 圖15(a)係以習知修正方法（圖16、圖ι7)所取得之已修 正多階光罩（參照圖17(d))之X 1 - XI線截面圖，圖15(b)係 使用圖15(a)之多階光罩進行曝光及顯影步驟後所取得之光 阻圖案111a之截面圖。 圖16(a)〜（b)係習知多階光罩之修正步驟圖。 圖17(c)〜（d)係習知多階光罩之修正步驟圖。 【主要元件符號說明】 1, 1〇1 透明部 2a, 102a 3a, 103a 4, 104 4a, 104a 5, 105 11a, 111aThe laser evaporates the scatter mark 5, but does not perform the thawing and evaporating, but does not form the laser evapotranspiration 5 in the 阶级 position of the residual class #G. In order to remove the defect D and expose the portion of the transparent substrate to the positive semi-transmissive film, it is preferable to deposit the region i: a region wider than the initial semi-transmissive film, that is, the exposed portion. This makes it easy to ensure redundancy, and it is easy to secure the area of the class portion 6. Fig. 11 (d) shows a state in which the formation of the pattern hook of the modified semi-transparent film is completed. As shown in this figure, the defect D in the semi-transmissive portion has been completely removed: As described above, the 'class portion G is formed on the entire peripheral portion immediately after the tampering of the semi-transmissive film 4 is formed, and the ray is the same as the case where the laser beam is not used. Part of the need for laser evapotranspiration. Figure u(d) is shown in the pattern 4a of the modified semi-transmissive film. [W knife remains in the class part G. However, it is also possible to form a redundant region without correcting the formation of the semi-transmissive film 4, and the laser evapotran step is omitted after the range of the filled film is specified. Fig. 13(a) is an enlarged cross-sectional view of the χ3-χ3 line shown in Fig. i1(d). This does not show a pattern in which a light-shielding film is formed on the transparent portion i where the glass substrate is exposed. The pattern portion 4a of the modified semi-transmissive film is formed into a step portion G in a boundary region portion 15201003302 with the light transmitting portion. Further, as shown in the figure, the light for exposure is irradiated from the back side of the glass substrate. Fig. 13 (b) is a cross-sectional view showing a photoresist pattern after exposure and development using the multi-step mask shown in Fig. i3 (a). In the example of the photoresist pattern of FIG. 1 (b), the film thickness of the photoresist is the thickest in the portion corresponding to the pattern 2a of the light-shielding film having the lowest transmittance, and the portion corresponding to the pattern 4a of the modified semi-transmissive film is In the portion where the film thickness is thinner than the light-shielding film and corresponds to the transparent portion 1 having the highest transmittance, the thickness of the photoresist film is completely removed, but the photoresist corresponding to the step portion G formed at the edge portion of the pattern of the semi-transmissive film is formed. In the pattern edge portion 14b, the thick film is changed from a step shape to a conical shape. As described above, the multi-step mask correction method according to the embodiment of the present invention is in the step of forming the semi-transparent iridium, by setting the level portion which is closer to the boundary of the transparent #, that is, the higher the level portion. It is possible to avoid the formation of the "abnormal portion of the transmittance (Fig. 15 (b) ll4b)" at the edge portion of the photoresist pattern. - Bu, not j Γ白-Shuangqiu M Other areas are adjusted to be substantially equal to the transmittance of the initial semi-transmissive film. 'As described above, 'the transmittances of the two are adjusted to be equal to each other and the step portion is set in the pattern portion', whereby the rust can be made, and the transmittance of the oozing portion is substantially uniform outside the edge portion of the pattern. On the other hand, in the case where the abnormal portion of the transmittance is prevented from being formed, y is formed in the step portion, and it is preferable that the portion of the step portion is made thinner toward the end portion. Let a be the most effective method for adjusting the transmittance. The side of the film thickness can be adjusted, and the table, Α. In addition, the film thickness and transmittance of the μ system are based on the formula (1) and the formula ί2 彳矣 - Pingxing at the close of the year '() cut) table π 'but qualitatively, the thinner the film thickness transmission 16 The higher the 201003302 rate, the thicker the film thickness and the lower the transmittance. When the unit thickness is L〇, the transmittance is set to $τ〇, and when the transmittance is τ〇, the curvature is D〇, and when the film thickness L is set to D, it can be expressed as: -〇 〇 = - log T〇.....(1) D=(L/L0) . D〇.....(2) In addition, 'may also be needed' further includes selective removal by, for example, laser evapotranspiration Correcting the "partial step" of the semi-transmissive film, laser evapotranspiration, etc., after the correction of the semi-transparent film is read, the edge of the case = the film thickness may be, but the generation of the poor photoresist pattern may be avoided by setting the class portion. This meaning means that the step of selectively removing the portion of the modified semi-transmissive film within the range in which the defective photoresist pattern is not formed is not problematic. "Zhang Wangyi (1) describes the end of the semi-transparent film, preferably the source electrode and the drain electrode forming region of the thin film transistor having the source and the drain, and other corrections isolated on the light transmitting portion. The edge portion of the pattern of the semi-transparent film. The present invention relates to the manufacture of a multi-step mask, and in particular, it is possible to provide an improvement in the accuracy of correction of defects, which is extremely industrially usable. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) to (b) are diagrams showing the defect correction of the multi-step mask of the first embodiment. Fig. 2 (c) to (d) are diagrams showing the defect correction of the multi-step mask of the first embodiment. Fig. 3(a) is a view showing a state in which the irradiation range is sequentially moved while irradiating the laser light having the same energy density lb I2 [J/cm2] 17 201003302 on the modified semi-transmissive film. Figures 3(b) and (c) are cross-sectional views taken along line X2 - X2 and Y1 - Y1 of Figure 3 (a), respectively. Figure 4 (a) is an enlarged cross-sectional view of the X3 - X3 line of 圊 2 (d). Fig. 4(b) is a cross-sectional view showing a photoresist pattern after exposure and development using the multi-step mask of Fig. 4(a). Fig. 5 (a) to (b) are diagrams showing the defect correction of the multi-step mask of the second embodiment. Fig. 6 (c) to (d) are diagrams showing the defect correction of the multi-step mask of the second embodiment. Fig. 7(e) is a diagram showing a defect correction step of the multi-step mask of the second embodiment. In particular, a step chart for correcting the formation of the pattern 4a of the semi-transmissive film is shown. Fig. 8 is an enlarged view of the slit portion s. Fig. 9(a) is an enlarged cross-sectional view taken along line X2-X2 of Fig. 7(e). Fig. 9(b) is a cross-sectional view showing a photoresist pattern after exposure and development using the multi-step mask of Fig. 9(a). Fig. 10 (a) to (b) are diagrams showing the defect correction of the multi-step mask of the third embodiment. Fig. 11 (c) to (d) are diagrams showing the defect correction of the multi-step mask of the third embodiment. Fig. 12 (a) is a plan view showing a state in which the semi-transmissive film 4 is formed on a flat glass substrate. Figure 12 (b) and (c) are the cross-sectional views of Figure 12 (Hook- Υ 1 line and Χ 2 - Χ 2 respectively. 201003302 Figure 14 (a) is the enlargement of the X3 - X3 line shown in Figure 11 (d) Fig. 14(b) is a cross-sectional view showing a photoresist pattern after exposure and development using the multi-step mask shown in Fig. 14(a). Fig. 15(a) is a conventional correction method (Fig. 16, Figure ι7) The X 1 - XI line cross-section of the corrected multi-step mask (see Figure 17 (d)) is obtained, and Figure 15 (b) is the exposure and development using the multi-step mask of Figure 15 (a). FIG. 16(a) to (b) are diagrams showing the correction steps of the conventional multi-step mask. FIGS. 17(c) to (d) are conventional corrections of the multi-order mask. Step diagram. [Main component symbol description] 1, 1〇1 transparent portion 2a, 102a 3a, 103a 4, 104 4a, 104a 5, 105 11a, 111a
遮光膜之圖案 初期半透光膜之圖案 修正半透光膜 修正半透光膜之圖案 雷射蒸散痕 光阻圖案 階段狀至圓錐狀之光阻圖案邊緣部（修正圖 114b 光阻圖案邊緣部（異常圖案） 、The pattern of the light-shielding film is modified by the pattern of the initial semi-transparent film. The pattern of the semi-transparent film is modified. The pattern of the semi-transparent film is laser-evaporated. The pattern of the photoresist pattern is stepped to the edge of the conical resist pattern. (abnormal pattern),
Rl，R2 修正區域 19Rl, R2 correction area 19