TW200923568A - Photomask and method of producing a photomask - Google Patents

Abstract

An object of this invention is to provide a photomask (gray tone mask) which has a plurality of light shielding portions, a plurality of light transmitting portions and a plurality of light semi-transmitting portions (gray tone portions) and which is capable of excellently controlling a resist film thickness in a resist pattern formed by using the gray tone mask. Specifically, even if a light semi-transmitting film forming the light semi-transmitting portions has non-uniformity in thickness, such as thickness gradient, the amount of exposure light transmitted at the light semi-transmitting portions is not affected by positions on the photo mask. On a transparent substrate 1, a light shielding film 6 and a light semi-transmitting film 5 are formed. The light shielding film 6 and the light semi-transmitting film 5 are patterned to form a plurality of light shielding portions 2, a plurality of light transmitting portions 3 and a plurality of light semi-transmitting portions 4 partially passing the exposure light. The light semi-transmitting film 5 is patterned so that the transmittance for the exposure light is different depending on positions on a film surface and that, under an exposure condition, the light semi-transmitting portions 4 are substantially uniform in effective transmittance.

Description

200923568 IX. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a photomask used in various electronic covers and manufacturing such a photomask. ~ The light is also used as a display device represented by a flat panel display (FPD) device as a series of various electronic parts. ° 疋 疋 疋 疋 : : : : : : : : : : 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋 晋A method of forming a cover for a film-attaching transistor (TFT), a color filter (CF), and the like, and a method of manufacturing a photomask for manufacturing such a photomask. [Prior Art] Now, in the field of liquid crystal display (LCD), A liquid crystal display device (Thin Film Transistor Li (hereinafter referred to as TFT-LCD) based on Thin Film Transistor (hereinafter referred to as TFT) is compared with CRT (Cathode Ray Officer)' In view of the advantages of being easy to be thinner and lower in power consumption, the TFT-LCD system has a TFT substrate having a structure in which TFTs are arranged in a matrix, and corresponding to A color filter in which a red, green, and blue halogen pattern is arranged for each element, and is superimposed on the liquid crystal layer. In the manufacture of such a TFT-LCD, the number of manufacturing processes It is manufactured by using five to six reticles even if it is only a TFT substrate. Under such circumstances, it is proposed to manufacture a TFT substrate 2130-9931-PF 6 200923568 using four photomasks. The manufacturing method can use a multi-layer photomask having a light-shielding portion and a semi-transmissive portion (in the following gray light portion) that transmits a part of the exposure light (in the '' For the grayness mask, the number of the masks to be used is reduced. In addition to the three levels of the light-shielding portion and the light-transmitting portion and the one-half light-transmitting portion, the gray-light mask may have Here, the four-layer transmittance is one of the four levels of transmittance. Here, the semi-transmissive portion refers to the reduction of the exposure light by a certain amount when the pattern is transferred by the transfer body using a photomask. After 1 minute, after exposure and development, the residual film formed on the resist pattern of the resist film formed on the transfer target (the itching, the portion of the light-shielding portion is performed) : corresponding to the light in the light transmission portion or the transmittance in the light transmission portion == part of the exposure light When one of the crucibles is 100%, for example, it can be 10% to the squad. u Hunting and using the reticle to pattern transfer onto the object to be transferred: the resist formed on the transferred body In the film, the amount of the residual film in the portion is, for example, 1% to 80% with respect to the light-shielding portion in the state of 1, or the light-receiving portion in the state in which the negative agent is used. The semi-transmissive material can form a light-transmissive film on a transparent substrate, and the so-called semi-transmissive film refers to a light machine that transmits a part of the exposure light: the exposure wavelength determined by the exposure conditions of the exposure machine is used. Or the exposure resolution 'determines the transmission characteristics of the light for exposure with respect to a film having a sufficiently wide area. When the transmittance is obtained, the exposure light of the transparent/plate is said to have a sufficient transmittance in the film to make it sufficiently wide. The transmittance of p is the film transmittance.

2l3〇~993l-pF 200923568 Next, the description will be made using the TFT base of such a grayness mask. First, on the broken glass substrate, the opening is formed by forming a gate insulating film, a first semi-conducting film, and a second semiconductor film by forming a metal for the gate electrode and a photolithography process using a photomask. Equivalent body (an), second semiconductor film C N+a~Si) 'Source (four) ϋ - Receiver' error by using a grayness mask, F exposure and development of a positive photoresist film, and covering I TFT The channel portion forming region, the f-source drain forming region and the data line forming Qg, and the first resisting d pattern are formed in the TFT-made region to make the resist film thick and thick. The resist film of the electrode/pole formation region is then etched with the first resist pattern as a mask, and the source drain metal film, the 苐1 semiconductor film, and the second semiconductor, the second semiconductor, Thousands of V body membranes. Then, a thin resist film of the TFT iS and the formation/region of the channel portion is removed by ashing by oxygen to form a second resist pattern. Next, the second resist film is etched by using the second resist pattern as a mask to etch the metal film for the source drain.

V strips the last remaining second resist pattern. The process of manufacturing TFT substrates, such as a relatively small number of masks, is not disclosed in Non-Patent Document 1 (Monthly FPD Knowledge 1 999. 5). SUMMARY OF THE INVENTION However, in the above-mentioned gray-light masks, 瑭, m, . . . ., the film and the semi-transmissive film can be formed by sputtering a conventional film forming apparatus. Here, it is possible to obtain the light-shielding property and semi-transparency required for the light for exposure by the film composition and film thickness of the film. In the state where the light-shielding film, β μ — layer is formed to form the light-shielding portion 2130-9931-PF 8 200923568, in a state in which a layer is formed and a semi-transmissive film is laminated, even in lamination, and in lamination and In a state in which a functional film such as etching suppression is formed, the total of the films is preferably an optical density of 3 〇 or more. On the other hand, in the semi-transmissive portion, in order to obtain a predetermined transmittance for exposure light, the selected film material is used for film formation. However, the substrate is large on the side _ or more, and at the most ==

The tendency has become significant. It is a lot of people who are more than 100mm in the future, and it is in the vicinity of 2000_. As such a large substrate, it is not easy to form a film having a uniform film thickness. For example, it is completely unavoidable to produce a film thickness tilt by a film formed by sputtering a relative position between a target and a film formation substrate. In the state in which the sputtering of the clock is dried or the substrate is simultaneously formed, it is also feared that the rotating shaft is generated at the center, the drought is changed, and it is also used in the state in which a plurality of tantalum ore gauges are used due to the film forming material. The relative distance between the target and the substrate to be filmed, while the composition of the film, produces a tilt. "In another aspect, the cover for manufacturing a display device represented by a liquid crystal manufacturing apparatus is mainly exposed to a predetermined wavelength region using an exposure skin length in a wavelength range of a x-ray to a g-ray. Here, it is formed in a photomask. The tendency of the pattern and the refinement of the two years has occurred. For example, in a thin film transistor, a photomask made of (:FT) t is formed in a semi-transmissive portion to form a channel corresponding to the part P. The source is adjacent to the source, the light pole, and the part is used as the light-shielding part. The cost of the liquid crystal is increased, or the brightness is increased. Therefore, the size of the channel portion is oriented toward miniaturization (for example, not m, even less than 2 "etc.) clamped in the sunscreen

2130-9931-PF 9 200923568 The fine semi-transmissive part is at the boundary of the exposure machine and is affected by the light-shielding part under the resolution of the exposure machine. The transmittance is lower than the inherent transmittance of the semi-transparent film. 'Or in the boundary with the light transmissive portion, the transmittance is higher than the intrinsic transmittance of the semi-transmissive film. This effect is more pronounced as the size of the channel portion is smaller. In other words, the inventors found a grayscale mask that has been recently refined, if the image corresponding to the semi-transmissive portion is moderately adjusted.

If the area or width of the case is large, the amount of exposure light for that portion can be controlled with considerable degree of freedom. X will be described below by way of example. κ. Fig. 8 is a pattern of each of the films formed by forming the semi-transmissive film 1〇2 and the light-shielding film 105 on the transparent substrate 1〇3 in this order to form a grayness mask. As shown here, the semi-transmissive film 102 forming a plurality of semi-transmissive portions m is formed on the transparent substrate 103 by sputtering. However, the thickness of the semi-transmissive film produced by the destruction of the metal is uneven, and as shown in FIG. 8, in any one direction, the film thickness is inclined at the semi-transmissive film 1〇2, The film thickness of the semi-transmissive film 1〇2 is caused by the relative position between the sputtering target and the substrate. Further, the film thickness of the semi-transmissive film 102 is as shown in Fig. 9, and the film thickness of the semi-transmissive film 1〇2 is different in the central portion and the peripheral portion of the transparent substrate 103. occur. Further, in order to easily understand the schema, the performance is exaggerated and is different from the actual downsizing. Further, in the photomask, a plurality of light-shielding portions 1〇4 are formed by forming a light-shielding film 1〇5 on the semi-transmissive film 102 on the transparent substrate 103, and the plurality of light-transmitting portions 1G6 are transparent. On the substrate m, the light shielding film 2130-9931-PF 10 200923568 105 and the semi-transmissive film 102 are removed. When the semi-transmissive film 1〇2 is formed on the transparent substrate 〇3, when the semi-transmissive film 102 is inclined, the plurality of semi-transmissive portions are: the transmittance of the light is due to the grayness mask. The location is different. The thickness of (4) m of the transferred body pattern formed by the grayness mask cannot be controlled to be a predetermined film thickness. θ在疋, the object of the present invention is to provide a plurality of light-shielding portions, a plurality of light-transmitting portions, and a plurality of semi-transparent, ρ (gray-optic) 4 masks (gray luminosity). In the mask, even if a semi-transmissive film of a plurality of semi-transmissive portions is formed to cause uneven thickness of the film thickness, etc., the amount of light for exposure of the plurality of semi-transmissive portions is not Due to the aforementioned unevenness due to the position on the reticle, the reticle having a resistant plate thickness of the resist pattern formed by the glare mask can be well controlled. Further, it is an object of the present invention to provide a method of manufacturing a photomask which can manufacture such a photomask. Further, an object of the present invention is to provide a mask having a plurality of identical unit patterns. Even if the film thickness of the semi-transmissive film is uneven, the plurality of unit patterns are present in a certain amount. A photomask for controlling the amount of light transmitted by a plurality of semi-transmissive portions and a method of manufacturing the same. Further, an object of the present invention is to provide a gray-light mask which can control the use of the gray-light mask even if the amount of light for exposure of the plurality of semi-transmissive portions formed in the plurality of semi-transmissive portions is out of a desired value. A mask having a resist film thickness of the formed resist pattern 4 has a desired value and a method of manufacturing the same. 2130-9931-PF 11 200923568 / The above object is solved by solving the above problems, and therefore, the present invention has any of the following configurations. [Structure 1] It is characterized in that 4:· W η y· Bm + is used for the resist film formed on the layer to be processed for the surname processing, and exposure is performed with the hood under exposure conditions The mask used in the process of forming a resist pattern of an etched mask is performed by forming a light-shielding film and a semi-transparent, a light-transmissive film, and a semi-transmissive film on a transparent substrate, respectively. Forming a plurality of solids: a light portion, a plurality of light-transmitting portions, and a portion of the light-transmitting portion that transmits a plurality of light-transmitting portions of the light for exposure, and the semi-transmissive film is exposed due to the position of the film surface: Differently, under the exposure conditions, patterning is performed to make the effective transmittance of the plurality of semi-transparent portions substantially uniform. In the photomask of the present invention having the structure 1, the semi-transmissive film has a different transmittance of the film for exposure light due to the film surface, but is patterned in the exposure = cow to make a plurality of semi-transparent The effective transmittance of the portion is slightly uniform. Therefore, it is possible to uniformly and uniformly control the area of each semi-transmissive portion by exposure of the material to be transferred by the predetermined exposure 2 using the photomask. The resist film is thick. [Structure 2] It is characterized in that the exposure is performed under the exposure conditions for the film which is formed by adding a film for the process of forming a surname: the two films are a mask of the surname process. Phase: The process of resisting the resist pattern of the early pattern is due to the reading of the kiln JI, which is used to form a light-shielding film and a semi-transparent film on the substrate and in the light-shielding film and 12 2l3〇- 993l^pp 200923568 The semi-transparent film is used to perform the light-duty part of the picture, and a plurality of light-shielding parts, a plurality of light-transmissive parts, and a plurality of semi-transmissive parts are used. The position of the kneading surface is such that the exposure light rate is different, and under the exposure conditions, the patterning is performed so that the actual over-rates of the plurality of light-transmitting portions of the unit pattern of the photomask 2 are substantially uniform. 'Transparent in the invention having the structure 2# w ^ hood, the light-transparent lanthanum is exposed due to the position of the film surface, and the transmittance of the film is different, but under the eye condition Patterning is performed such that the effective singularity of the plurality of semi-transmissive portions corresponding to the plurality of resistive unit patterns is substantially uniform, which can be rotated by using the reticle The warmth of the printed body is caused by the exposure of the transferred P body, and the light unit is controlled in a good manner. The corresponding plurality of semi-transparent parts corresponding to the pattern of the hard resisting unit are correspondingly The resist film thickness in the area. [Structure 3] The feature is that in the reticle having the structure 2, the patterning system includes the reticle unit pattern having a plurality of semi-transparent pattern shapes corresponding to the plurality of glazing pattern patterns being different. In the reticle of the present invention having the structure 3, the patterning system includes a plurality of semi-transparent pattern shapes in which the bit pattern corresponds to the plurality of resist unit patterns, so that the macro eve and the suffix may correspond to the plurality of The effective transmittance of the plurality of semi-transmissive portions of the unit pattern is schematic [Structure 4]. The feature is: in the photomask having the structure 3, the unit pattern of the mask is 2130-9931-PF 13 200923568 semi-transmissive portions Each of the systems has a portion that sandwiches the parallel edges of the two _light portions, and includes a plurality of semi-transmissive portions of the plurality of unit patterns of the reticle by different positions on the substrate. The shape of the pattern is different. In the reticle of the present invention having the structure 4, each of the plurality of semi-transmissive portions of the reticle unit pattern has a portion sandwiched between the parallel edges of the two opaque portions, including the distance between the two edges. The pattern shape of the plurality of semi-transmissive portions of the plurality of unit patterns of the reticle is different according to the position on the substrate, so that 'there can be caused by the predetermined exposure conditions using the reticle The exposure of (4) is "good" to control the thickness of the resist film of the area corresponding to the plurality of unit patterns of the mask. ',, [Structure 5] A reticle of any one of the structures 4 to 4, and a reticle for the manufacture of the reticle-based film transistor, each of the plurality of semi-transmissive portions forms a channel portion of the thin film transistor. The reticle of the present invention is constructed as 5, each of the plurality of semi-transmissive portions for manufacturing a thin film transistor can be (4) formed into a thin film transistor [Structure 6] is characterized in that a mask is used for the two-layer film formed in the etching and processing layer and Under established exposure conditions 2130-9931-PF 14 200923568 manufacturing method of the reticle used for the process of forming a resist pattern of a plurality of the same shape resisting unit pattern of the resist film formed by the mask The utility model has the advantages that the light-shielding film is formed on the roadway and the reading is also applied, and the light-shielding film and the semi-transparent light-shielding portion of the light-shielding film and the plurality of light-transmissive portions are transparently exposed. The use of the light of the first few of the first. The manufacturing method of the mask of the 釭 釭 使得 使得 使得 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光In addition, under the exposure conditions, the shape of the mask of the reticle unit is substantially the same as that of the pattern of the plurality of resist units. In the reticle of the invention, due to the position of the film surface, the film transmittance of the film and the film is different, and the shape of the film is determined under the exposure conditions. The mask early pattern corresponds to a plurality of resistant unit pattern rates Slightly the same, therefore, it is possible to manufacture a film thickness of the resistive film caused by the exposure of the object to be transferred, and the amount of the light-transmitting material should be in the region corresponding to the plurality of single ridges of the reticle. [Structure 7] [Feature 7] The method is as follows: in the manufacturing method of the photomask having the structure 6, after the semi-transmissive film is opened on the transparent substrate, the film transmittance is measured at a plurality of bits 1' of the semi-transmissive film forming surface. , rooting, 1丨丨中+士, go-丄φ 1+ according to the film transmittance of the 透光++ light-transmissive film, the shape of the plurality of unit patterns is determined by the pattern of the ^ for the light-shielding film And the semi-transmissive film 'is patterned, so that the effective transmittance of the plurality of vertical patterns corresponding to the plurality of semi-transmissive portions is substantially uniform. 2 j.30-993l-pp 15 200923568 In the invention having the structure 7 In the method of manufacturing a photomask, after a semi-transmissive film is formed on a transparent substrate, a plurality of surfaces of the semi-transmissive film forming surface are measured, and a film transmittance is measured, and light is determined according to a film transmittance of the measured semi-transmissive film. The shape of the plurality of unit patterns of the cover, by determining the shape of the pattern, Patterning is performed on the light-shielding film and the semi-transmissive film, so that the effective transmittance of the plurality of unit patterns corresponding to the plurality of semi-transmissive portions is substantially uniform 'SUb' can be manufactured by the predetermined exposure conditions The reticle of the resist film corresponding to the region corresponding to the plurality of unit patterns is controlled to be uniformly and uniformly controlled by the exposure of the transfer target. '[Configuration 8] is characterized in that, in the manufacturing method of the photomask having the structure 6, a plurality of positions of the semi-transmissive film 'on the semi-transmissive film forming surface are formed on the test substrate before the patterning is performed, The film transmittance is measured, and a plurality of unit patterns of the mask are determined based on the measured film transmittance of the semi-transmissive film, and the light shielding film and the semi-transmissive film are patterned by the predetermined pattern shape. The effective transmittance of the plurality of unit patterns corresponding to the plurality of semi-transmissive portions is substantially uniform. In the manufacturing method of the photomask of the present invention having the structure 8, a semi-transmissive film is formed on the test substrate before the patterning is performed, and the film is permeated at a plurality of positions on the surface of the semi-transparent film forming surface. The rate 'determines a plurality of unit patterns of the mask according to the measured film transmittance of the semi-transmissive film, and patterns the light-shielding film and the semi-transmissive film by the determined pattern shape, and 2 makes a plurality of The unit pattern corresponds to the effective effect of a plurality of semi-transmissive parts through the 2130-9931-pr 16 200923568 rate, so that the earthworms can be made, the students can be made, and the moon is enough. The number of exposure strips is: a mask having a resist film thickness corresponding to a region corresponding to a plurality of unit patterns is uniformly and uniformly controlled for exposure of the transferred body. ~Heart [Structure 9] Special": The mask is used for the film 4 formed on the layer to be processed, and the exposure is performed under the predetermined exposure point f f w The resist film is formed by etching a plurality of the same shapes of the mask: the process of the resist pattern of the early pattern of the agent is used to form the light shielding film by using the transparent substrate and The semi-transmissive film and the semi-transmissive film are respectively patterned to form a plurality of abundances, a read light transmissive portion, and a mask of a plurality of light-transmissive portions that are partially transmitted through the exposure light. The "method of π soap" is formed on a transparent substrate to form a semi-first film, and the film transmittance is measured at a plurality of positions on the semi-transmissive film formation surface, and the pattern is determined according to the measured film transmittance of the semi-transmissive film. Shape. /' In the manufacturing method of the photomask of the present invention having the structure 9, after the semi-transmissive film is formed on the transparent substrate, the film transmittance is measured at a plurality of positions on the semi-transmissive film forming surface, according to the measurement. The film shape of the semi-transmissive film determines the shape of the pattern Therefore, it is possible to manufacture a region in which a plurality of semi-transmissive portions corresponding to the plurality of fill pattern of the photomask can be uniformly and uniformly controlled by exposure to the object to be transferred by a predetermined exposure condition. A mask with a thick film thickness [Structure 1 0 ] 17

2130-9931-PF 200923568 is characterized in that, in the method of fabricating a photomask having any one of the structures 7 to 9, the pattern formed on the light-shielding film is determined based on the measurement result of the film transmittance. In the method for producing a photomask according to the present invention having the structure 10, the pattern formed on the light-shielding film is determined based on the measurement result of the film transmittance, and therefore, the exposure to the object to be transferred which can be caused by the predetermined exposure conditions can be manufactured. And controlling a plurality of semi-transmissive portions corresponding to light in a good average sentence

The resist film thickness of the region corresponding to the plurality of unit patterns of the cover [structure 11;], *:·, . . . the manufacturing method of the photomask having any one of the structures 6 to 9, a plurality of semi-transparent Each of the light portions has a portion sandwiched by parallel edges of the two light shielding portions. The method of the reticle of the present invention is as follows: construction 11, a plurality of semi-transparent. Each of them can have a folder. The portion L structure 12 of the parallel edges of the two light-shielding portions is characterized by: the structure of the semi-transmissive portion of the photomask that is manufactured by the method of the structure 6 to 1 A reticle for a wafer, a plurality of channel portions of a reticle of the present invention. 叮 成为 成为 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复13] The method is as follows: 2130-9931~ρρ 18 200923568, which has the reticle of any of the structures 6 and 9, has a method of checking a plurality of half after performing the 尨 & + tea conversion The inspection process of the effective transmittance of the light-transmitting portion is obtained under the exposure conditions of the exposure-mileage under the exposure conditions, and a plurality of transparent portions and a plurality of semi-transmissive portions are obtained. The raw material of the semi-transparent portion is measured by the ruthenium. The 透过 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤After the lamp is patterned, a plurality of semi-transparent inspection processes are inspected, and in the inspection process, °, the transmittance of the film is measured under the exposure conditions of the exposure conditions to obtain a plurality of light-shielding portions, a plurality of light-transmitting portions and a plurality of semi-transmissive portions of the transmitted light data to determine the effective transmission of the plurality of semi-transmissive portions Therefore, the effective transmittance of each semi-transmissive portion under the exposure condition of the predetermined exposure can be made substantially uniform. In the present invention, it can be grasped by the inspection after the film formation of the semi-transparent film. The above-mentioned film thickness is unevenly formed by the position of each of the knives on the substrate. The exposure transmittance is 1. JL, g The sentence or the ridge is formed by the position on the substrate caused by the unevenness of the film quality. The unevenness of the transmittance of the exposure is checked. Even if the film transmittance of the entire semi-transmissive film is different from the required value, it can be adjusted by the shape of the image in the aforementioned grayness mask. The effective transmittance of the light part should be the required value. That is, the invention has a reticle with a plurality of light parts, a plurality of light transmitting parts, and a plurality of semi-transmissive parts (gray luminosity parts). Photometric mask), can provide one Even when the semi-transmissive film of the plurality of semi-transmissive portions is opened to produce a film thickness unevenness or the like, the light transmittance of the plurality of semi-transmissive portions is not caused by the light. Position on the cover =

2130-9931-PF 19 200923568 The aforementioned unevenness affects and can well control the mask of the resist film thickness of the resist pattern formed by the grayness mask. Further, the present invention can provide a method of manufacturing a photomask which can manufacture such a photomask. In addition, the present invention can provide a reticle having a plurality of identical unit patterns, even if the semi-transmissive film produces the aforementioned unevenness, the plurality of unit patterns are controlled to control a plurality of half A photomask for transmitting light for exposure of a light transmitting portion and a method of manufacturing the same. Further, the present invention can provide a gray-light mask which can control the use of the gray-light mask even in a state where the transmittance of the exposure light of the plurality of semi-transmissive films formed is out of a desired value. A mask having a resist film thickness of a resist pattern formed to have a desired value and a method of manufacturing the same.

The following is a description of a preferred embodiment of the present invention. [The photomask of the present invention] i. The photomask of the present invention is as shown in Fig. 1, on a transparent substrate! There are a plurality of opacity masks of a plurality of light shielding portions 2, a plurality of light transmitting portions 3, and a plurality of semi-transmissive portions = /photometric portions 4 . The reticle is formed by using a resist film formed on the processed impurity layer processed by the two-row process by an exposure device: light causes the resist film to become a resist pattern of the (four) processed mask; In addition, the reticle is particularly suitable for use as a reticle for a thin film electro-crystal, and in this state, the singularity of the plurality of light-transmitting portions 4 is used.

2130-9931-PF 200923568 Channel section of the membrane transistor. The reticle of the present invention can be produced as follows. That is, first, a reticle blank of the semi-transmissive film 5 and the light-shielding film 6 is laminated on the transparent substrate 1 in this order. On the reticle blank sheet, a resist pattern 'corresponding to a plurality of light-shielding portions 2 and a plurality of semi-transmissive portions 4 is formed, and the resist pattern is used as a mask, and the mask pattern is exposed (patterned). 6. Next, a plurality of light-transmitting portions are formed by using the resist pattern or the light-shielding film 6 as a mask and (four)! (patterning) the exposed semi-transmissive film 5. Then, by forming a resist pattern in a region including a portion corresponding to at least the plurality of light shielding portions 2, the resist pattern is used as a mask, and (4) (patterning) the exposed light shielding film 6 to form a plurality of semi-transparent films. The light portion 4 and the plurality of light blocking portions 2. In this manner, a plurality of semi-transmissive portions 4 for forming the semi-transmissive film 5, a plurality of light-shielding portions 2 for forming a laminated film of the light-shielding film 6 and the semi-transmissive film 4, and a plurality of the plurality of light-transmissive films 5 can be obtained. The light transmissive portion is formed by a photomask. The reticle of the present invention is as shown in Fig. 2, and can also be produced as follows. That is, first, a photomask blank for forming the light shielding film 6 on the transparent substrate i is prepared. Forming a resist pattern corresponding to a plurality of regions of the light-shielding portion 2 on the reticle blank sheet, using the resist pattern as a mask, and engraving (patterning) the exposed light-shielding film 6, and the pattern is . Next, the resist pattern is removed, and the semi-transmissive film 5 is formed on the entire surface of the transparent substrate 1. Then, by forming a resist pattern 'with the resist pattern as a mask' in a region corresponding to the plurality of semi-transmissive portions corresponding to the plurality of semi-transparent 胄 4 and the plurality of opaque portions 2 Exposed, money engraved 2130-9931-PF 21 200923568 (patterned) semi-transparent film 5' to form a plurality of light transmissive portions 3 and a plurality of semi-transmissive portions 4. In this manner, a plurality of semi-transmissive portions 4 forming the semi-transmissive film 5, a plurality of light-shielding layers 2 forming the laminated film of the light-shielding film 6 and the semi-transmissive film 5, and a plurality of layers can be obtained on the transparent substrate 1 The light transmissive portion is formed by a photomask. In addition, the present day mask can also be produced as follows. That is, first, a reticle blank of the light-shielding film 6 is formed on the transparent substrate. A resist pattern corresponding to a plurality of regions of the light shielding portion 2 and the plurality of light transmitting portions 3 is formed on the reticle blank sheet, and the resist pattern is used as a mask, and (4) (patterned) exposed light shielding film 6. The transparent substrate exposed in the area of the plurality of semi-transmissive portions 4 is then removed: the agent pattern 'is on the transparent substrate! On the entire surface, the film-forming semi-transmissive film 5 is formed in a region of a plurality of light-shielding portions 2 and a plurality of semi-transmissive portions 4 to form a resist pattern. By (4) a resist pattern as a mask, (4) (the semi-transmissive film 5 and the semi-transmissive film 5 and the light-shielding film 6 are patterned, (4) a plurality of light-transmitting portions 3, a plurality of light-shielding portions 2, and a plurality of The light transmitting portion 4. The present invention does not exclude the manufacturing process other than the above-mentioned photomask. The photomask of the present invention has the transmittance of the optical film 5 as shown in Figs. In the case of the semi-transmissive film 5, the film thickness is inclined, and therefore, the transmittance of the light for exposure is not determined due to the position of the film 5. Further,

The film thickness of the film 5 is constant. Also, due to the conditions at the time of film formation, the film composition is not (4) due to the position in the plane. Further, a conventional method such as a sputtering method can be applied. Trench 2130-9931-PF 22 200923568 At this time, each semi-transmissive portion 4 under exposure conditions can be made by adjusting the pattern of the two light-shielding portions 2 adjacent to the respective semi-transmissive portions 4 of FIG. The effective transmission rate is outlined. In the following, it is described. Here, the term "smooth uniform" means that the unevenness of the exposure light caused by at least the position of the nine semi-transmissive film 5 is reduced to achieve a uniformization state. That is to say, the effective transmittance of the plurality of semi-transmissive portions 4 is uniformized. For example, in the form of a photomask for manufacturing a thin film transistor, the effective transmittance of the exposure light of the plurality of semi-transmissive portions 4 is preferably 疋 on the mask effective surface (the region of the pattern transfer). Within the group. Even better, it is less than 1%. In order to reduce the effective transmission amount of the semi-transmissive portion 4 and/or the portion where the transmittance is low, the film transmittance of the semi-transmissive film 5 is increased by 4 minutes. The adjustment of the effective transmission amount of the semi-light transmitting portion 4 is increased. The adjustment is performed on the adjustment of the shape of the pattern. Preferably, the adjustment is performed by the shape (size) of the light-shielding pattern formed by the light-shielding film 6, by being half-transparent formed in the plurality of semi-transmissive portions 4. The film transmittance of the light film 5 adjusts the pattern shape of the light-shielding film so that the effective transmittance of the plurality of semi-transmissive portions 4 under the exposure conditions of the exposure device is substantially uniform. That is to say, the semi-transmissive film 5 forming the plurality of semi-transmissive portions 4 is formed by unevenness in film thickness at the time of film formation such as sputtering, and in any direction, in a semi-transparent film. 5. The film thickness is inclined. In the present specification, 2130-9931-PF 23 200923568 refers to such a film thickness inclination ' (wedge film thickness inclination). In this manner, even if there is a difference in film transmittance due to the difference in film thickness of the semi-transmissive film 5 due to the difference in the position of the transparent substrate, the present invention is combined with the difference in transmittance of the film. Adjusting the pattern shape of the plurality of light shielding portions 2 makes the effective transmittance of the plurality of semi-transmissive portions 4 a rough average. The so-called effective transmittance of each of the semi-transmissive portions 4 is sufficiently broad as the transmitted light intensity of the light-transmissive portion 3 which is sufficiently broad and wide as the transmitted light intensity of the semi-transmissive portion 4 for exposure light is Iw. When the masking intensity is 1b, the value expressed by the following formula is displayed.

Transmittance (effective transmittance) = 丨Ig / ( Iw - Ib) } xlOO% In addition, in the state where the area of the semi-transmissive portion 4 is small, the transmittance of the light for distributed exposure is displayed in the semi-transmissive portion 4, However, at this time, the transmittance of the peak of the semi-transmissive portion 4 is made the effective transmittance of the semi-transmissive portion 4. This value is related to the residual film value of the resist of the object to be transferred. , semi-transparent. The pattern adjustment of the light shielding portion 2 sandwiched between P 4 is performed as follows. As shown by the arrow 8 in FIG. 2 and FIG. 2, the semi-transmissive portion 4 in which the film thickness of the semi-transmissive film 5 is thinned and the transmittance (臈 transmittance) of the semi-transmissive film 5 itself becomes high, Adjustment is made such that the translucency (width) is narrowed. In addition, the film thickness of the semi-transmissive film 5 of the photomask is different as shown in Figs. 3 and 4, and the film thickness of the semi-transmissive film 5 at the central portion and the peripheral portion of the transparent substrate 1 is different. A state of slanting occurs. In the present specification, the thickness of the film is referred to as "the thickness of the mountain film is inclined". Even if 2130-9931-ρρ 24 200923568 is in this state, the mask is also thinned as in Fig. 3 and Fig. 4A, and the thickness of the semi-transmissive film is thinner and the translucent film is transparent. The semi-transmissive portion 4 having an excessive rate (film transmittance) is adjusted to adjust the pattern of the light-shielding portion 2 sandwiched between the translucent portions 4 so that the surface of the semi-transmissive portion 4 is narrowed, so that a plurality of The effective transmittance of the semi-transmissive portion 4 is: In addition, a plurality of semi-transparent 邬 4 dry edges are particularly good. Each of the cymbals 4 has a portion sandwiched between two light: 2 parallel edges, at which the area of the semi-transmissive portion 4 is adjusted by the margins between the edges. The "light mask" is formed, for example, as a resist pattern formed by a thin film transistor and a color filter, a light sheet ((1), etc., and is formed as a mask for forming a resist pattern including a resist unit pattern of the same shape. Also in this state, by adjusting the transmittance of the light-transmitting film 5 formed in the semi-transmissive portion 4, the pattern of the light-shielding portion 2 adjacent to the semi-transmissive portion 4 is adjusted to expose the exposure conditions of the exposure device. The lower reticle unit pattern corresponds to the effective permeation of the plurality of semi-transmissive portions 4 of the plurality of resist unit patterns, and the ratio is substantially uniform. That is, in this state, the plurality of unit patterns of the reticle are plural The pattern shape of the semi-transmissive portion 4 is different. In the photomask, the difference in film transmittance of the plurality of semi-transmissive portions 4 corresponding to the plurality of unit patterns of the semi-transmissive film 5 is resisted by patterning. The effective transmittance of the plurality of semi-transmissive portions 4 corresponding to the plurality of unit patterns of the reticle is substantially uniform. In addition, in the reticle of the present invention, the effective transmittance Ig of each of the semi-transmissive portions 4 is Can be 10% to 8〇%, more ideally 2〇 %to.

2130-9931-PF 25 200923568 In the case of such a photomask, the effects of the present invention become remarkable. The semi-transmissive film 5 used in the present invention can use a transmittance (film transmittance) of exposure light which is inherent to the film to be from 41% to (four)' more preferably from 20% to 65%. As the above-mentioned semi-transparent film 卩 series of compounds, M. Compound, Si, w, A1 #. Among these, in the chromizing M, there are chrome oxide ruthenium nitride (CrN small oxynitridation), gasification road (CrFx) or carbon or hydrogen in these. As a ruthenium compound, in addition to MoSix In addition, a nitride, an oxide, an oxynitride, a carbide, or the like of MQSi is further included. Further, the transmittance of the plurality of semi-transmissive portions 4 formed on the mask is a film material of the semi-transmissive film 5 The thickness of the light-shielding film 6 can be set as the main component of the light-shielding film 6. Alternatively, the light-shielding film 6 can be made of a film containing chromium as a main component and a chromium compound (such as CrC). The laminated film of the anti-reflection film is suitably used. However, in the formation of the resist pattern using the photomask described above, for example, an exposure device having a light source having a wavelength range from i-ray to g-ray is used for being disposed on the transfer. The resist film on the body is exposed through the reticle. The resist pattern on the transfer target obtained by such exposure is not necessarily the same as the plurality of opaque portions 2 and 2 of the reticle. Light transmitting portion 3 and a plurality of semi-transparent The same pattern of the pattern formed by the light portion 4. For example, in each exposure device, the wavelength characteristics of the light source are different, and 'the light source of the exposure device also changes with time, so even if the same mask is used, 'through this The intensity pattern of the exposure light does not need to be the same. 2130-9931-PF 26 200923568 = It is said that in the state where the gray light is used, the semi-transmissive portion 4 is made due to the spectral characteristics of the exposure source. The solid system is based on the semi-transparent film consisting of a predetermined semi-transmissive material. The wavelength depends on the growth factor. Therefore, in the state in which the present invention is measured, it is taken to reflect the exposure used in actual conversion. In the state in which the transmittance of the plurality of semi-transmissive portions 4 of the patterned photomask is evaluated, in the following aspects, it is necessary to pay attention to the fact that the translucent portions 4 are actually transmitted. The amount of light used for exposure is not installed

The characteristics of the optical system are also changed by the influence of the gray-scale mask. For example, the resolution of the pattern is changed by the spectral characteristics of the light source of the exposure device. Therefore, the light intensity of the exposure light transmitted through each of the semi-transmissive portions 4 changes. As a result of the discovery by the present inventors, especially in the manufacture of TFTs in which the channel portion has a tendency to be finer, it is seen that the Putian is too retreating, and there is exposure due to the optical characteristics of the exposure device and the shape of the pattern. Changes in the transmission characteristics of light. As described above, in the gray-light mask, the transmitted light intensity of the light-transmitting portion 3 which is sufficiently broad in the transmitted light intensity of each semi-transmissive portion 4 is sufficiently transmitted as the transmitted light intensity of the light-shielding portion 2 In the state of ib, the effective transmittance of the semi-transmissive portion 4 can be obtained by the value expressed by the following formula.

Transmittance (effective transmittance f T„ . . τ 乂1 1 C Iw — I b) } xlOO% It can be considered that the effective transmittance of the semi-transmissive portion 4 is in the semi-transmissive portion 2130-9931-PF 27 200923568 4 In a state in which the resolution of the exposure apparatus is sufficiently large, the area of the film transmittance of the semi-transmissive film 5 of the phase transparent portion 4 is small, and the light is adjacent to: Effect of the portion 2 or the light-transmitting portion 3: The effective transmittance becomes a value of the film transmittance which is different from that of the +-transparent film 5, that is, in this state, The transmittance is not effective, and it is effective transmission rate. In particular, for example, in a gray-light mask for manufacturing a thin film transistor, a region for the channel portion is used as the semi-transmissive portion 4 and is configured by the light-shielding portion 2: Clamp the source of the source of the ash luminosity mask. In the gray illuminance mask, along with the area of the ^ 之 之 区域 ( ( ( ( ( ( ( ( ( 邻接 邻接 邻接 邻接 邻接 邻接The boundary of the shading portion 2 is in the actual exposure condition rate ==== cannot be resolved), and the exposure of the channel portion is used. The transmission rate is lower than the inherent transmittance of the first film 5, and the transmittance is higher at the boundary with the adjacent light-transmitting portion 3. Actual effect = rate :: The above-mentioned condition is measured or evaluated half. Method for Measuring Light-Transmissive Portion 4 "Transmission Rate Reflected by Condition 4 [Manufacturing Method of Photomask of the Present Invention] The method of manufacturing the photomask of the present invention is a method of manufacturing the photomask of the present invention, as described above, And the right side + ^ is also covered with the square film 6 and the semi-transparent light is formed on the transparent substrate 1 to form a light-shielding layer 2, ... which is patterned to form a plurality of light-shielding two, the light-transmitting portion 3 and the plurality of semi-transmissive portions The process of 4: the film of the straw is formed in the film of the semi-transmissive film 5 forming the semi-transmissive portion 4

2130-9931-PF 28 200923568 The ratio of the light shielding portions 2 adjacent to the respective semi-transmissive portions 4 is adjusted so that the effective transmittance of the plurality of semi-transmissive portions 4 under the exposure conditions of the exposure device is substantially uniform. Further, as described above, even in the state of manufacturing a photomask for forming a resist pattern containing a plurality of the same shape of the resist unit pattern, by fitting the semi-transmissive portion 4 The film transmittance of the semi-transmissive film 5 adjusts the pattern of the light-shielding portions 2 adjacent to the respective semi-transmissive portions 4 such that the reticle unit pattern under the exposure conditions of the exposure device corresponds to a hard number of resist unit patterns. The effective transmittance of the plurality of semi-transmissive portions 4 is substantially uniform. The adjustment of the pattern of the light shielding portion 2 sandwiched between the semi-transmissive portions 4 is as follows. As shown in FIG. 1 and FIG. 3, a semi-transmissive film 5 is formed on a transparent substrate, and a mask of the light-shielding film 6 is formed on the semi-transmissive film 5, first on the transparent substrate i. After the semi-transmissive film 5 is formed, the transmittance of the semi-transmissive film 5 is measured. Preferably, the transmittance is measured in-plane in the transmittance of the effective area of the mask (the area where the transfer is performed). Next, at the time of patterning, 'the film transmittance (transparent (four) distribution) of the semi-transmissive film 5 is determined, and the unit pattern of the photomask is corresponding to a plurality of semi-transparent patterns of the plurality of resist unit patterns. The effective transmittance of the film 5 of the half of the light portion 4 is a general average sentence. For example, it is determined that the pattern of the difference in film transmittance due to the position of the light-transmissive film 5 is blocked. In the case of the shape of the round shape determined in this manner, the light shielding film 6 and the semi-transmissive film 5 can be mapped so that the plurality of early patterns of the mask correspond to the plurality of semi-transmissive portions 4 The effective transmission rate is roughly 2130-9931-PF 29 200923568. The above processes are as follows, for example. (1) On the transparent substrate 1, a semi-transmissive film 5 is formed (2) A light-shielding film 6 is formed on the semi-transmissive film 5. It is attached (3) In addition, a resist film is applied to serve as the uppermost layer.

Photomask blank of the resist film. S depicts the resist pattern by laser light or the like. (4) In the pattern of the reticle blank sheet 1 of (3), the light-shielding film pattern is formed by forming (5) and (4) the resist agent pattern 6' by performing development. Here we apply the wet residual. In this case, as a mask, the light-shielding film is etched, and even if it is suitable for dry etching, it is possible to use the above-mentioned pattern or light-shielding film pattern to make a film as a mask. The semi-transmissive film pattern (7) is formed by removing the resist pattern, and a new resist film is irradiated, etc., and the second image is drawn, and development is performed. (1) The mask film 6 is formed by the formed second resist pattern. The mask is removed by the mask of the surname C 9 ) to form a mask. After the process of (1), the film transmittance can be measured, and the effective area on the substrate 1 can be used. At this time, it is preferable to use the inspection device' to use warm-up light suitable for the wavelength region in the case where the photomask is actually used. The receiver's distribution of transmittance in the effective area: + The average value enters the range of Α± α with respect to the target transmittance, and the state of the 甘 甘 从 u 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 )

2130-9931-PF 30 200923568 It is used to offset the in-plane deviation. ^ When manufacturing a photomask, the light-shielding film pattern. If it is the position of the thin film transistor, it is increased or decreased in the direction corresponding to the deviation of the pin by the edge of the two light-shielding portions of the width R of the towel 5 of the in-plane semi-transmissive portion 4 The map of X is fortunate to consult the ensign, and the description of the pattern of the 2 patterns, ..., ... in the case of the above description, in the preparation of the above-mentioned Dibei Village, this is done. Further, in the above-described example, a plurality of light-receiving portions 2 and a plurality of light-shielding portions 2 and a plurality of light-shielding portions 2 are defined by, for example, patterning of the light-shielding portions 2: In this state, the result of the measurement by the second cloth is the data of the first pattern. The adjustment of the pattern of the outer hood 2 can be just as it is. That is, as shown in FIG. 2 and FIG. 4, the light-shielding film 6 is formed on the transparent substrate, and the mask of the light-transmissive film 5 is formed on the light-shielding film 6 on the light-shielding film 6, which can be Adjust the pattern for the following processes. (1) A light-shielding film 6 is formed on the transparent substrate 1. (2) A resist film is coated on the light shielding film 6. (7) On the resist film of (2), the first pattern is drawn by laser light or the like, and the first resist pattern is formed by development. (4) The light-shielding film 6 is etched by using the above-described resist pattern as a mask to form a light-shielding film pattern. (5) After removing the resist pattern, the semi-transmissive film 5 is formed on the entire surface including the light-shielding film pattern. Positive (6) coated resist film. 31

2130-9931-PF 200923568 (7) On the resist film of (6), the second pattern is drawn by laser light or the like, and the second resist pattern is formed by development. (8) The semi-transmissive film 5 is etched as a mask with a second resist pattern. (9) The resist pattern is removed to form a photomask. Here, even after the process of (5), the in-plane distribution of the transmittance of the semi-transmissive film 5 was measured, and the result was not reflected in the light-shielding film pattern. Since the light shielding film pattern has been formed on the transparent substrate i. However, it is possible to measure the film transmittance distribution of the semi-transparent film having the same composition in the test substrate in the same manner as in the above-described semi-transmissive film 5, and quantitatively grasp the film formation conditions caused by the film formation conditions. The in-plane deviation factor of the transmittance on the film formed by the film. The transmittance distribution data may be provided, and the description data for the drawing of the first pattern may be prepared in advance. In other words, in the state where there is a variation in the transmittance in the effective region, the correction data can be made to offset the deviation so that the transmittance of the semi-transmissive portion 4 in the effective plane is substantially uniform. For example, in the case where the photomask includes the specifications of the unit pattern of the same shape, the effective transmissive portion of the corresponding semi-transmissive portion 4 can be roughly drawn between these. In the simulation of the reticle of the present invention, it is also possible to provide a process for inspecting the effective transmittance of the plurality of semi-transmissive portions 4 after the application. In the inspection process, under the approximate exposure conditions of the exposure of the exposure device, a plurality of light-shielding portions 2, a plurality of light-transmitting portions 3, and a plurality of light-transmissive portions 4 are transmitted (four), and the plurality of transparent electrodes 2130-9931 are measured. -pf 32 200923568 Effective transmission rate of Light Department 4. [Adjustment of Patterning of Manufacturing Method of Photomask of the Present Invention] In the method of manufacturing the photomask, the pattern adjustment of the light shielding portion 2 is specifically performed as follows. That is, as shown in Fig. 5, a semi-transmissive film 5 is formed on the transparent substrate 1 or on the test substrate, and the transmittance distribution of the semi-transmissive film is measured. The measurement of the transmittance distribution is performed under the approximate exposure conditions of the exposure conditions of the exposure apparatus, and the measurement is performed under the exposure conditions. In addition, after the reticle of the present invention is manufactured, it can also be captured by the photographic device under the approximate exposure conditions of the exposure conditions of the exposure device by checking the state of the transmission characteristic. Grab the pattern of the transfer body and check it. In addition, α may be formed by masking the grayness of the pattern and forming a resist pattern on the object to be transferred: a plurality of grayness masks to grasp in advance whether or not to form a correlation relationship, 'to become f Library. In this way, the offset can be roughly summed up... The second is easy to make the pattern data for the transmittance of the 1 hook. The approximation of the exposure device refers to the exposure wave + + the first exposure condition of the first piece, the column is set at the wavelength of the exposure light, and the state of the exposure with the highest light intensity is the optical system approximation, for example, This so-called exposure is slightly the same or the NA (opening number) of the coherent image

- The outline of the same system is relative to the real? A ±〇. 0〇5 state. In addition, the NA of the first clothes is the same as the month σ, and the range of ±0'05 is σ with respect to the sigma of the exposure performed by 2l3〇-993l-pp 33 200923568. Further, it is preferable that not only the imaging optical system, but also the illuminating optical system. By performing such estimation, as shown in FIG. 6, the change in the effective transmittance of the semi-transmissive portion 4 (the change in the amount of transmission of the exposure light) with respect to the area of the semi-transmissive portion 4 can be obtained ( The data of the change in the width of the semi-transmissive portion 4 which is swelled by the light shielding portion 2, and the like. In the present invention, the semi-transmissive portion sandwiched by the edge of the parallel light-shielding portion 2 can be determined, for example, based on the data on the effective transmittance of the complex light and the film of the semi-transmissive film 5 through the material I. The shape of 4 and the spacing of the pair of flat rods are added to the edges of the masking portion 2. That is, by adjusting the interval between the edges of the parallel light-shielding portions 2 of one of the semi-transmissive portions 4, the difference in film permeability of the 柢w-pin + light-transmissive film 5 can be adjusted. That is, as shown in Fig. 6+(4)b, the semi-transmissive portion 4 is changed when the semi-transmissive portion 4 sandwiched by the edge of the parallel shading portion 2 is changed.

The transmissive transmittance is low. On the contrary, when the towel field of the semi-transmissive portion 4 sandwiched by the edge of the pair of parallel light-shielding portions 2 is changed by I, the transmissive transmittance of the semi-transmissive portion 4 becomes high. . Therefore, the film permeability of the film of the first film is high; the required transmittance (thickness of the film thickness is reduced), and the width of the semi-transparent portion 4 is made.

The correction of the narrowing of the distance between the light-shielding portions 2). Conversely, 'the transmissivity of the semi-transmissive film 乍V is lower than the required transmittance (thickness is thickened), and the width of the semi-transmissive portion 4 is made from the g-center (a pair of parallel light-shielding portions 2) The adjustment between the extension of the distance between the M's. In addition, the relationship between the first half of the first 4 and the actual effect of the < m hand, as shown in Figure 6, also

2130-9931-PF 34 200923568 Due to exposure conditions, adjustments are made using the information of the specified exposure conditions. Further, as described above, the light transmittance for exposure of the semi-transmissive portion 4 can be adjusted by covering the entire area of the effective area of the mask by the width ' of the semi-transmissive portion 4'. In other words, after the semi-transmissive film 5 is formed on the transparent substrate 1, the film transmittance can be measured, and the pattern of the semi-transmissive portion 4 having the required effective transmittance can be determined based on the measured transmittance data. shape. [About inspection device] In the method of manufacturing a photomask according to the present invention, as shown in Fig. 7, an inspection device can be used as shown in Fig. 7 . In the inspection apparatus, the transparent substrate 1 or the test substrate is held by the holding device 丨3. The inspection device has a light source that emits a light beam of undetermined wavelength, i]. As the source 11 system, for example, a lamp, a metal halide lamp, a UHP lamp (ultra-high pressure mercury lamp), or the like can be used. 〇 In addition, the inspection device has a transparent substrate that guides the inspection light from the light source 11 and is held by the holding device 13! Or test the substrate to illuminate the illumination optics of the light, 12 . Since the illumination optical system and the 12-series can change the number of openings (NA), they have a compression mechanism. Further, it is preferable that the illumination optical system 12 includes a visual field compressing unit for adjusting an irradiation range of the inspection light of the transparent substrate or the test substrate. The inspection light passing through the illumination optical system 12 passes through the light source selection, the Tang water μ, the cώ 俾/light absorber 16 , and is incident on the transparent substrate 1 or the test substrate held by the holding device 13 . The inspection light system that is irradiated onto the transparent substrate 1 or the test substrate passes through the transparent

2130-9931-PF 35 200923568 Γ二=plate "shot to the lens of the lens... the lens of the lens lens L4 makes the number of turns (NA) variable. The inspection of the bin substrate is apricot - A Low 丄 a / only j 之 丨 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; (Change - the second group (imaging lens) 14b of the first bundle. In this inspection apparatus, the door opening of the illumination optical system 14, the number of openings of 2, and the door of the lens lens system 12 become variable', therefore, can be changed The number of openings of the illumination aperture 12 is the sigma value (σ: coherence) with respect to the object transmission. The ratio of the number of apertures is received by the beam passing through the lens system 14. The photographing device 15 is photographic transparent == 15, the image is taken as the image of the photographing surface, and the image of the test substrate is used. For the image 15 which is broken, the photographing element such as (10) can be used, and then the photographing image obtained by the inspection apparatus is set to _15. Image processing: ^ Control device not shown by comparison and display of the photographic device: and = threshold value The inspection device can be used to obtain the photographic image of the exposure light, using a predetermined exposure light cloth, and performing a predetermined calculation by the control device, and the light intensity transmitted by the light is divided into the photographic image under the condition of exposure light or Light intensity = in the use of other inspection devices, in g-ray, h-ray and soil ray ^. For example, when the light intensity distribution is obtained under the exposure conditions, the 'intensity ratio of the beam and the i-ray can be 'can' Become 〗 〖· 2 ·· j, exposed in g-ray, h exposure conditions

2130-9931-PF 36 200923568 Light intensity distribution under light conditions. Included in the exposure device; @In the inspection device, it is also used for the evaluation of the light condition caused by the variation of the intensity of each wavelength of the exposure device, and can be exposed in the exposure In the state of exposure, it is possible to determine the appropriate exposure conditions in the residual film. In the case of erroneous inspection of the clothes, the illumination optical system 12 is placed on the test substrate while holding the lens system 14 and the substrate 1 and the substrate is substantially straight. The optical axis of the person is in a state of uniformity, and the light is illuminated and received by two of the Zhaoming 丼 糸彳 9 Dujin 仃祆. Here, the two-object lens system 14 and the photographic skirt 15 are each movable by means of a mobile operating device which is not shown; The first axes of the distinct r-valleys are mutually aligned, and the camera lens system 14 and the imaging lens system 14 are moved in parallel with respect to the main plane of the transparent substrate 1 or the test substrate. . Lens Π "In: Inspection device" can be controlled by the control device to move and operate in the direction of the optical axis, and can be used to display the lens system "and the imaging device 15 independently of each other". , the relative distance between the substrate 1 or the test substrate. In the inspection apparatus 2, it is possible to perform photography in a state close to the exposure apparatus using the transparent substrate 1 or the test substrate by the direction in which the substrate lens system 14 and the photographing device Μ can independently move the direction. Alternatively, the focus of the lens lens system 14 may be used to capture a blurred image of the transparent plate 1 or the test substrate by the photographing device 15. It is also possible to judge the performance of the luminosity mask and the presence or absence of defects by evaluating an image like this 2130-9931-pp 37 200923568-like blur. Further, in the embodiment of the present invention to be described, an example will be described. The film thickness is inclined so that the wedge-shaped film thickness is inclined and the mountain-shaped film thickness is inclined. However, the film thickness inclination is not limited to these. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a state in which a film thickness of a semi-transmissive film is generated in a certain direction by a reticle structure of the present invention in which a semi-transmissive film is formed on a transparent substrate. Fig. 2 is a cross-sectional view showing the state of the reticle of the present invention in which the light-shielding film is formed on a transparent substrate, and showing the inclination of the film thickness of the semi-transmissive film in a certain direction. Fig. 3 is a cross-sectional view showing a state in which the thickness of the semi-transmissive film is inclined in the form of radiation # L M 1 in which the opaque film of the present invention is formed on a transparent substrate. 4 is a view showing a light-shielding structure of the present invention in which a light-shielding film is formed on a transparent substrate, and shows that one of the light-films having a film thickness of the semi-transmissive film is radially formed, and the film is effectively penetrated, and FIG. 5 is In the method of manufacturing a photomask, a plan view and a graph showing the measurement results of the transflective transmittance distribution are shown. Fig. 6 is a view showing the rate of the transition of the central portion of the semi-transmissive portion sandwiched by the edge of the parallel light-shielding portion in the method of manufacturing the photomask of the present invention. Figure 7 is a view showing the inspection apparatus used in the manufacturing method of the photomask of the present invention.

2130-9931-pF 38 200923568 Side view of the construction. The thickness of the semi-transparent film is shown. Fig. 8 shows a state in which the inclination of the structure of the conventional reticle is generated in a certain direction. Fig. 9 shows the thickness of the semi-transparent film of the conventional reticle. Main component symbol description] 1~transparent substrate; 2~shading portion; 3~transmitting portion; 4~ semi-transmissive portion; 5~ semi-transmissive film; 6~ light shielding film; 11~ light source; 12~ illumination optical system; 1 3~ holding device; 14~substrate lens system; 14a~1st group (simulator lens); 14b~2nd group (imaging lens); 15~photography device; 16~light source selection filter; 101~half Translucent portion; 102~ semi-transparent film; 103~transparent substrate; 2130-9931-PF 39 200923568

1 0 4 ~ light shielding portion; 1 0 5 ~ light shielding film; 1 0 6 ~ light transmitting portion. 2130-9931-PF 40

Claims (1)

200923568 X. Patent application scope: L A kind of mask is used for the resist film formed on the processed reed which is processed by the money engraving, and is exposed under a predetermined exposure condition: the resist film becomes The reticle used in the process of etching and processing the mask pattern of the mask is formed by forming a light-shielding film and a semi-transmissive film on the transparent substrate and performing a pattern on the light-shielding film and the +-transparent film, respectively. Forming a plurality of light shielding portions, a plurality of light transmitting portions, and a mask for partially transmitting a plurality of semi-transmissive portions of the light for exposure, T < The rate is Μ, and the exposure light is applied, and the above-described patterning is performed under the above-described exposure conditions, so that the effective transmittance of the plurality of semi-transmissive portions is substantially uniform. 2. A type of photomask for use in a resist film formed on a processed layer processed in (four) etching, and using a photomask under a predetermined exposure condition = the resist film becomes a plurality of masks of the aforementioned surname processing The process of using the resist pattern of the resistive unit pattern is performed by forming a light-shielding film, a semi-shielding film, and a semi-transmissive film on the transparent substrate, respectively, at the crotch portion, the plurality of light transmissive portions, and - a partial mask that is transparent to a plurality of light-shielding portions, and a plurality of semi-transmissive lenses that pass through the exposure light are characterized by: 2130-9931-PP 41 200923568 The semi-transmissive film described above is exposed due to the position of the film surface The film transmittance is different. Under the above-described exposure conditions, the above-described patterning is performed such that the effective transmittance of the photoreceptor portion corresponding to the plurality of resist unit patterns is substantially uniform. 3. The photomask of claim 2, wherein the patterning comprises a mask unit pattern having a pattern shape corresponding to the plurality of semi-transmissive portions corresponding to the plurality of resist unit patterns. 4. The reticle of claim 3, wherein each of the plurality of semi-transmissive portions of the reticle unit pattern has a portion sandwiched between parallel edges of the two opaque portions, including the two edges The distance between the plurality of semi-transmissive portions of the plurality of unit patterns of the reticle is different by the difference in position in the pure position. 5. The reticle of any one of the above-mentioned patents, wherein the reticle is a reticle for manufacturing a thin film transistor, and each of the plurality of semi-transmissive portions forms the thin film electric The channel portion of the crystal. 6·-Manufacturing method of seed light sheet' is a resist film formed on a processed layer subjected to money etching, and is exposed using an exposure film under an exposure condition, and the resist film is included in the etching process. The method for manufacturing the mask used in the process of resisting the pattern of the resisting unit pattern of the plurality of masks of the same shape, the light shielding film and the semi-transmissive film are formed to form a plurality of masks Manufacture of a reticle in which a plurality of semi-light portions, a plurality of light-transmissive portions, and a portion of the light-transmitting portion and the semi-transmissive film are respectively formed in the light-shielding film and the semi-transmissive film, and which are exposed to the light-transmissive portion of the film 2130-9931-PF 42 200923568 The method is characterized in that: the semi-transmissive film described in the month is such that the film transmittance of the exposure light is different due to the position of the film surface, and second, before the patterning is performed, under the exposure conditions described above. The shape of the patterning of the second layer is determined such that the reticle unit pattern corresponds to the plurality of semi-transmissive portions of the plurality of resisting early pattern. The method for manufacturing a photomask according to the sixth aspect of the invention, wherein the semi-transmissive film is formed on the optically transparent substrate, and the film transmittance is measured at a plurality of positions of the semi-transparent forming surface, according to the measurement#抽,#, Α ^ ^ # 0 The film transmittance of the light-transmissive film determines the shape of several unit patterns after the mask, and the shape of the pattern is determined by the decision of the eve, the +, the semi-transparent film, and the 图案' In the above-mentioned light-shielding film and dry-dragon film, the entry barrier is in the plurality of semi-transparent's, so that the effective transmittance of the plurality of unit patterns corresponding to the first portion is as follows. Declaring the light of item 6 of the patent scope in the foregoing patterning method, wherein a semi-transmissive film is formed on the semi-transmissive film forming surface and the measuring type 5 substrate, and the plurality of bits are formed in accordance with Measuring the plurality of unit patterns of the semi-transmissive yttrium film transmittance cover, and determining the shape of the light semi-transparent film, and the light-shielding film and the plurality of semi-transmissive portions; The effective transmittance of the plurality of unit patterns is substantially uniform. 2130-9931-pp 43 200923568 9· A method for manufacturing a photomask, which comprises using a mask for a resist film formed on a layer to be processed (4) and exposing it under exposure conditions of 13 The film of the same shape is used as the mask of the etching process, and the method for manufacturing the mask has a method of forming a light-shielding film on the substrate by (4) The semi-transmissive film is formed by dividing the light-shielding film and the semi-transmissive film into a plurality of light-shielding portions, and forming a plurality of light-shielding portions, and a plurality of light-transmitting portions m are transmitted through a plurality of semi-transparent light of the exposure light. The method for manufacturing a photomask according to the method of the present invention is characterized in that: after the semi-transmissive film is formed on the transparent substrate, the film transmittance is measured at a plurality of positions on the semi-transmissive film forming surface, and the film is measured according to the above-mentioned The shape of the above-mentioned pattern is determined by the permeation rate of the membrane. In the method of producing a photomask according to any of the items 7 to 9 of the invention, the pattern formed on the light-shielding film is determined based on the measurement result of the film transmittance. The method of manufacturing a photomask according to any one of claims 6 to 9, wherein each of the plurality of semi-transmissive portions has a portion sandwiched by parallel edges of the two shading portions. 12. In the method of manufacturing a photomask according to any one of the items (4), the photomask is used for the manufacture of a phototransistor film, and the plurality of semi-transmissive portions are respectively shaped. In _ you Xiaocheng describes the channel part of the bonded film transistor. 2130-9931-PF 44 200923568 i3. For example, in the sixth method of claiming patents, i|jig ψ ^ of the mask of any one of Gulu/9 items, and checking the foregoing plurality of patterns after patterning The inspection process of the effective transmittance of the light-transmitting portion, in the above-mentioned inspection process, the plurality of light-shielding portions, the plurality of light-transmitting portions, and the plurality of semi-transmissive portions are obtained under exposure conditions similar to the exposure conditions The measurement of the order by the light ray is described by the effective transmittance of the plurality of semi-transmissive portions. 45 2130-9931-PF