TW200848920A - Gray tone mask inspecting method, method of producing a gray tone mask for use in manufacturing a liquid crystal device and pattern transferring method - Google Patents

Gray tone mask inspecting method, method of producing a gray tone mask for use in manufacturing a liquid crystal device and pattern transferring method Download PDF

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TW200848920A
TW200848920A TW096146061A TW96146061A TW200848920A TW 200848920 A TW200848920 A TW 200848920A TW 096146061 A TW096146061 A TW 096146061A TW 96146061 A TW96146061 A TW 96146061A TW 200848920 A TW200848920 A TW 200848920A
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light
exposure
gray scale
scale mask
semi
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TW096146061A
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TWI422962B (en
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Koichiro Yoshida
Terumasa Hirano
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

In a gray tone mask inspecting apparatus according to this invention, a light beam having a predetermined wavelength is emitted from a light source 1 and irradiated through an illuminating optical system 2 to a gray tone mask 3. The light beam passing through the gray tone mask 3 is supplied via an objective lens system 4 to an image pickup device 5 which picks up an image to obtain image data. From the image data, intensity distribution data of a transmitted light in a region including a semi-transmissive portion of the gray tone mask.

Description

200848920 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用於檢查曝光用的灰階光草的性 能的灰階光罩的檢查方法’特別主要是有關於一種平坦面 板顯示器(以下稱FPD)裝置製造用的大型灰階光罩的檢查 方法。又’本發明係有關於液晶裝置製造用灰階光罩的製 造方法及圖案轉印方法。 【先前技術】 習知技術巾，關於光罩性能的檢查，纟專利讀工（特 :平5 —249656號公報)中，成為被檢查體的光罩的照明光 穿透的強度分佈由攝影元件(以下稱CCD)檢測出，而記载 =k查缺的u。在該檢查裝置巾，將檢查光線將光而 …、射至形成大約〇· 3 " m間距的微細圖案的光罩，穿透該光 罩的檢查光擴大照射，而以分解能力大約^ 影。 辦 即’在該檢查裝置中 末自光源的檢查光經 座可於光罩的面内方向 ’通過光罩的檢查光擴 光罩的像。 上 台 中 到 使光罩成為水平而載置於台座 由照明光學系而照射至該光罩。 移動操作。然後，在該檢查裝置 大照射至攝影元件上成像，而得 在專利文獻2(特開平4-328548號公報）中，記載著藉 由曝光裝置檢測出實際轉印至晶㈣光罩的缺陷及異物的 -哀置在D亥楦查裝置中，以習知的檢查裝置所檢測出 2130-9291-PF；Chentf 5 200848920 :缺陷及異物之外，相位偏移光罩及光罩的穿透不的偏移 、陷及曝光波長依存性的光罩基板部的缺陷等也可以檢 杳。 U 容 内 明 發 ，在專利文獻1中，並未提及對光罩面内的既定部位作 "的方法i_疋’台座可在光罩的面内方向移動操作， 又，由於光罩為—邊是大約5英忖至6英叶的角形基板， 在專利文獻1所記载的檢查I置巾，會有不適於檢查光罩 整面的情況。 又，在專利文獻1中，為了評估具有微細凹凸圖案的 相位偏移光罩的缺陷及接 光罩的曝光程序中的光阻厚产 所造成的焦點偏移的影響，將攝影元件從檢查光的焦點: 置2移而作攝影所㈣㈣像與設計上的光罩㈣所形成 的影像訊號以及以攝影元株i 缉心70件為焦點位置而攝影的影像訊號 作比較而記載。 即，在實際的I C製造工妒rb 丄 ^ — 私中，由於薄膜的層積反覆進 打好幾層，在使用光罩的曝 +尤過耘中，會有光阻的厚度使 焦點偏移而縮小照射的情況。若考慮該等光罩的微細圖案 間距’則焦點偏移的影塑 杪0〜^疋可以忽略，又使用焦點深度變 珠的相位光罩的情況下，評估焦點偏移的影響是重要的。 口此，專利文獻1所記載的檢查裝置中，為了評估起 因於使用相位偏移光罩的情況等的被轉印面的段差等的焦 點偏移的影響，設置了使摄 — 史躡衫兀件可於檢查光的光軸方向 2130-9291-PF;Chentf 6 200848920 變位的攝影位置變位裝i，對應於在使用光罩的曝光過程 中的被轉印面的攝影元件在光軸方向上從焦點位置偏移， 而檢查其影響。 於此，所謂的液晶顯示面板等稱為FPD的顯示裝置的 製造：所使用的大型的光罩中，在透明基板的主表面形成 以Cr等為主成分的遮光膜，在該遮光膜上藉由顯影而形成 既定的圖案，除了形成具有遮光部及透光部的二元光罩 (binary mask)之外，在透明基板的主表面上也廣泛地使用 具有遮光部、透光部以及半透光部的灰階光軍。而且，所 謂的半透光部為穿透曝Μ線的—部份，以下稱為灰階 部。又，灰階光罩使穿透光罩的曝光光量選擇性地減少， 其目的在於選擇性地調整被轉印體上的光阻的顯像後的殘 膜厚度。冑穿透光罩的曝光光線選擇性地減少，穿透—部 份的半透光部為其中一種(三階的灰階光罩），四階以上的 多階光罩也包含於本發明的灰階光罩中。 而且，在半透光部中，包含有半透光膜形成的半透光 (U以下稱半透S㈣式」）以及以曝光條件在解析界限 以下的微細圖案而形成半透光部(以下稱4「微細圖案形 式」）。 在進行如此的灰階光罩的缺陷檢查及性能評估的檢杳 中，存在有以下的問題。 一 即’在如此的灰階光罩中，形成於光罩的圖案與實際 上光罩的使用而轉印至被轉印體表面的光阻膜的圖案(: 際而言，將轉印圖案做顯像而得到的光阻圖案）不同'。= 2130-9291-PF;Chentf 7 200848920 此’對所使用的曝光裝置 蕻由的曝先條件’重現圖案轉印狀態， 猎由坪估重現的轉印像而評估是重要的。 壯置對於「微細圖案形式」的半透光部，藉由曝光 3的對物透鏡系的解像度還有刻意進行的散焦，由於使 圖案成為非解像狀態而形成轉印像，做為該轉印像 而形成的光阻圖案的形狀與形成於光罩的圖案不同。而 二：然上述解像度係與曝光裝置的透鏡系以及曝光光線 显、有關#光波置的照明的波長特性隨著曝光裝置而 ” ’而且隨著時間變化。因此，使用光罩而在被轉印體上 Γ寻輪阻圖案形狀’必須對既定部分的膜厚是否在既 定的範圍内預先做模擬而掌握而判斷其性能。 而且，即使對於「半透光膜形式」、的半透光部，根據 該半透光部的尺寸、形狀，在曝光裝置的曝光條件下，受 到鄰接的遮光部等的影響，形成與形成於光罩上的圖案不 同的轉印像。而且’用於該半透光部的半透光膜的光穿透 率係根據曝光光線的波長而變化，曝光光線的波長特性係 :據曝光哀置而異’而且，隨著該照明光源的隨著時間的 k化而變化。因此’在近似特定的曝光裝置的曝光條件的 曝光條件下而得到的轉印像由檢查裝置所得到的穿透光 強度分佈做模擬等’可以見到上述的評估、判定方法是必 要的。 又，在上述灰階光罩的灰階部產生缺陷時，該缺陷與 遮光部及透光部的缺陷不同，對應於該尺寸及形狀，由於 瞭解疋否成為光罩使用時的障礙而預先進行該評估，光罩 2130-9291-PF;Chentf 8 200848920 产革s理上，具有極大的意義。 而實施修正之朽^. 野於灰階部的缺陷 i正之際，本發明的發明人認 罩使用時的性能是否充分是極為重要的1正對於判斷光 透弁邱、、“ 馮重要的。灰階部的修正與 σ遮光部不同，缺陷不僅根據其形壯，>、/ 實際的光罩使用時的條件 /須根據 來判斷。特別的評估是必要的…的穿透光的強度分佈 因此，本發明的發明人看出對應於上 的使用法的檢查方法是必要的。 卓々特八 有鑑於上述實際的情況’本發明的目的在於提供一種 灰階光罩的檢查方法，用於光罩的性能評估以及缺陷檢查。 =明的目的在於提供使用該光罩的檢查方法的液晶 衣置ϋ用灰階光罩的製造方法以及圖案轉印方法。 為解決上述問題而達成上述目的，本發明的灰階光罩 的檢查方法具有以下構造的其中之一。 [構造1] 、構造i的灰階光罩的檢查方法，在透明基板上形成包 含遮光部、透光部以及使曝光光線的-部份穿透的半透光 部的圖案’藉由曝光裝置的曝光將上述圖案轉印至被轉印 體上’藉此用於製造顯示裝置之際的灰階光罩的檢查方 法’具有求出攝影影像資料的工冑，從光源發出的既定波 長的光束經由照明光學系而照射至上述灰階光罩，穿透該 灰階光罩的光束經由對物鏡S，藉由攝影裝置而做攝影， 其中由上述攝影影像資料取得包含上述灰階光罩的半透光 部的穿透光線的強度分佈資料。 2130-9291-PF;Chentf 9 200848920 在具有構造1的本發明的灰階光罩的檢查方法中，從 光源發出的既定波長的光束經由照明光學系而照射至上述 灰階光罩，穿透該灰階光罩的光束經由對物鏡系，藉由攝 影裝置而做攝影，由上述攝影影像取得包含上述灰階光罩 的半透光部的穿透光線的強度分佈資料，因此，可良好地 進行灰階光罩的性能評估及缺陷檢查。 [構造2]200848920 IX. Description of the Invention: [Technical Field] The present invention relates to a method for inspecting a gray scale reticle for checking the performance of gray scale grass for exposure 'particularly mainly relates to a flat panel display ( Hereinafter, the inspection method of a large gray scale mask for manufacturing an FPD) device is referred to. Further, the present invention relates to a method of manufacturing a gray scale mask for producing a liquid crystal device and a pattern transfer method. [Prior Art] In the conventional technical towel, the inspection of the performance of the reticle, in the patent reading (Japanese Patent Publication No. Hei 5-249656), the intensity distribution of the illumination light penetration of the reticle of the object to be inspected by the photographic element (hereinafter referred to as CCD) is detected, and u is described as missing. In the inspection device towel, the light is irradiated to the reticle forming a fine pattern of about 〇·3 " m pitch, and the inspection light penetrating the reticle is enlarged and irradiated, and the decomposition ability is approximately . In the inspection apparatus, the inspection light from the light source can pass through the inspection light diffuser image of the reticle in the in-plane direction of the reticle. In the middle stage, the mask is placed horizontally and placed on the pedestal. The illuminator is illuminated by the illumination optics. Move operation. Then, the inspection device is irradiated with a large amount of light to the imaging element, and it is described in the patent document 2 (Japanese Laid-Open Patent Publication No. Hei-4-328548) that the defect which is actually transferred to the crystal (four) mask is detected by the exposure device. The foreign matter-disappointment is detected in the D-hai inspection device by 2130-9291-PF detected by a conventional inspection device; Chentf 5 200848920: In addition to defects and foreign matter, the phase-shifting mask and the reticle are not penetrated. The offset, the trap, and the defect of the exposure wavelength dependence of the mask substrate portion can also be checked. U 容内发发, in Patent Document 1, there is no mention of a method for making a predetermined portion of the mask surface i_疋' pedestal can be moved in the in-plane direction of the reticle, and, due to the reticle In the case of the angled substrate of about 5 inches to 6 inches, the inspection of the I-shield described in Patent Document 1 may be unsuitable for inspecting the entire surface of the mask. Further, in Patent Document 1, in order to evaluate the influence of the focus shift of the phase shift mask having the fine concavo-convex pattern and the focus shift caused by the resistive exposure in the exposure process of the photomask, the photographing element is irradiated from the inspection light. The focus is as follows: The image is formed by comparing the image signal formed by the photomask (4) with the design mask (4) and the image signal photographed by focusing on 70 photographs. That is, in the actual IC manufacturing process, the thickness of the photoresist is offset, and the thickness of the photoresist is shifted by the thickness of the film. Reduce the exposure. In consideration of the fine pattern pitch of the masks, the influence of the focus shift is important in the case where the shadow shift of the focus shift 疋0 to 疋 is negligible and the phase mask of the focus depth is used. In the inspection apparatus described in Patent Document 1, in order to evaluate the influence of the focus shift such as the step of the transfer surface due to the use of the phase shift mask, etc., the photo-shift is set. It is possible to check the optical axis direction of the light 2130-9291-PF; the photographic position of the changed position of the Chentf 6 200848920 is displaced i, corresponding to the photographic element of the transferred surface during the exposure process using the reticle in the optical axis direction The focus position is offset and the effect is checked. Here, in the production of a display device called an FPD, such as a liquid crystal display panel, a large-sized photomask is used, and a light-shielding film containing Cr or the like as a main component is formed on the main surface of the transparent substrate, and the light-shielding film is used as a light-shielding film. A predetermined pattern is formed by development, and in addition to forming a binary mask having a light-shielding portion and a light-transmitting portion, a light-shielding portion, a light-transmitting portion, and a semi-transparent portion are widely used on the main surface of the transparent substrate. The gray-scale light army of the Ministry of Light. Further, the so-called semi-transmissive portion is a portion penetrating the exposure line, hereinafter referred to as a gray scale portion. Further, the gray scale mask selectively reduces the amount of exposure light passing through the mask, and its purpose is to selectively adjust the thickness of the residual film after development of the photoresist on the transfer target. The exposure light passing through the reticle is selectively reduced, and the transmissive-partial semi-transmissive portion is one of them (third-order gray-scale reticle), and the fourth-order or higher multi-order reticle is also included in the present invention. Grayscale reticle. Further, the semi-transmissive portion includes a semi-transmissive (hereinafter referred to as a semi-transparent S (four) type) formed by a semi-transmissive film, and a semi-transparent portion (hereinafter referred to as a semi-transmissive portion) under exposure conditions below a resolution limit. 4 "Micro pattern"). In the inspection of the defect inspection and performance evaluation of such a gray scale mask, there are the following problems. In the gray scale reticle, the pattern formed on the reticle and the pattern of the photoresist film transferred to the surface of the transfer target by the use of the reticle (in other words, the transfer pattern is to be transferred) The photoresist pattern obtained by the development is different. = 2130-9291-PF; Chentf 7 200848920 It is important to evaluate the transfer state of the transfer device by the exposure condition of the exposure device used. In the semi-transmissive portion of the "fine pattern form", the resolution of the objective lens system of the exposure 3 is deliberately defocused, and the transfer image is formed by causing the pattern to be in a non-resolution state. The shape of the photoresist pattern formed by transferring the image is different from the pattern formed on the photomask. And two: the above resolution is related to the lens system of the exposure device and the exposure light, and the wavelength characteristics of the illumination associated with the light wave are "with the exposure device" and change with time. Therefore, the photomask is used for being transferred. The shape of the wheel-resisting pattern on the body must be judged and judged in advance for the film thickness of a predetermined portion within a predetermined range. Moreover, even for the semi-transmissive portion of the "semi-transmissive film form", According to the size and shape of the semi-transmissive portion, under the exposure conditions of the exposure apparatus, a transfer image different from the pattern formed on the reticle is formed by the influence of the adjacent light-shielding portion or the like. Moreover, the light transmittance of the semi-transmissive film used for the semi-transmissive portion varies according to the wavelength of the exposure light, and the wavelength characteristic of the exposure light is different depending on the exposure, and along with the illumination source It changes with the k of time. Therefore, it is necessary to perform the above-described evaluation and determination method by 'simulating the transmitted light intensity distribution obtained by the inspection apparatus under the exposure conditions of the exposure conditions of the specific exposure apparatus. Further, when a defect occurs in the gray-scale portion of the gray scale mask, the defect is different from the defects of the light-shielding portion and the light-transmitting portion, and is determined in advance according to the size and shape of the mask. The evaluation, photomask 2130-9291-PF; Chentf 8 200848920 leather, is of great significance. However, it is extremely important for the inventors of the present invention to recognize whether or not the performance of the cover is sufficient when the defect is in the gray scale. The correction of the gray-scale portion is different from the σ-shielding portion, and the defect is judged not only according to its shape, but also the actual condition of the reticle when it is used. It is necessary to evaluate the intensity distribution of the transmitted light. Therefore, the inventors of the present invention have found that an inspection method corresponding to the above usage method is necessary. In view of the above-described actual circumstances, the present invention aims to provide an inspection method for a gray scale mask for use in Performance evaluation of the mask and defect inspection. The purpose of the invention is to provide a method for manufacturing a liquid crystal garment using a gray scale mask and a pattern transfer method using the inspection method of the mask. To achieve the above object, The inspection method of the gray scale mask of the present invention has one of the following configurations. [Configuration 1] The inspection method of the gray scale mask of the structure i is formed on the transparent substrate to include a light shielding portion and a light transmission portion. And a pattern of the semi-transmissive portion that partially penetrates the exposure light to transfer the pattern onto the transfer target by exposure of the exposure device', thereby using a gray scale mask for manufacturing the display device The inspection method 'has a process for obtaining photographic image data, and a light beam of a predetermined wavelength emitted from the light source is irradiated to the gray scale reticle via the illumination optical system, and the light beam penetrating the gray ray mask passes through the pair of objective lenses S, Photographing by a photographing device, wherein the intensity distribution data of the transmitted light including the semi-transmissive portion of the gray scale mask is obtained from the photographed image data. 2130-9291-PF; Chentf 9 200848920 In the present invention having the configuration 1 In the method for inspecting a gray scale mask, a light beam of a predetermined wavelength emitted from a light source is irradiated to the gray scale mask through an illumination optical system, and a light beam that penetrates the gray scale mask passes through the pair of objective lens systems by a photographing device. In the photographing, the intensity distribution data of the transmitted light including the semi-transmissive portion of the gray scale mask is obtained from the photographed image, and therefore, the performance evaluation and the defect inspection of the gray scale mask can be satisfactorily performed. [Structure 2]

在具有構造1的灰階光罩的檢查方法中，上述光源發 出至J g線、h線或1線其中之一，或者是以上任意二種 以上混合的光束。 在具有構造2的本發明的灰階光罩的檢查方法中，由 於上述光源發出至少g線、h線或i線其中之一，或者是 以上任意二種以上混合的光束’可重現曝光裝置中的曝光 條件，可良好地進行灰階光罩的性能評估及缺陷檢查。 v ^ b，災日日衣直的 專的大型裝置的情況下，對應於該圖案尺寸，纟自曝光光 率的面的曝光光量比解像度優先，曝光光線不是單色光， 而是使用混合複數個波長區域的光的光束。在本發明中， 與以單色綠查光的光源的習知的檢查方法比較，可修正 而重現在曝光裝置中所得到的曝光圖 ^ [構造3] ^ 在具有構造 … 白'灰階光罩的檢查方法中，昭明光 予糸的開口數及上述對物透鏡系的開 ' 上述曝光裝置中的照明光學系的開：大略相等於 數以及對物透鏡系的 2130-9291-PF;Chentf 10 200848920 . 開口數。 在具有構造3的本發明的灰階光罩的檢杳 侧光學系的開口數及上述對物透鏡系的開二 略相荨於上述曝光裝置中的照明光學系的開口數以及對物 透鏡系的開口數，因此可重現曝光裳置中的曝光條件，可 良好地進行灰階光罩的性能評估及缺陷檢查。 例如，關於「微細圖案形式」的半透光部，使穿透灰 (ρ皆光罩的曝光光線成像的對物透鏡系的解析度由於對穿夠 ν 該半透光部的曝光光量有大的影響，若檢查裝置中對物透 鏡^的解像度與曝光裝置中的解像度不同，則無法良好地 進行灰階光罩的性能評估及缺陷檢查。即使是「半透光膜 形式」，對於鄰接於遮光部而夾著兩側的區域，從該遮光 部的=像狀態，由於使曝光光線成像的對物透鏡系的解析 度使穿透半透光部的曝光光線的光量受影響，當在檢查裝 置中的對物透I系㈣解析度與曝光裝置中的解析度不同 (日夺，則無法良好地進行灰階光罩的性能評估及缺陷:查。 因此上述本發明可良好地進行評估。 [構造4 ] 在具有構造1至構造3其中之一的灰階光罩的檢查方 法中，夠具有下列工程：從上述攝影影像資料取得上述灰 階光罩的半透光部、透光部以及遮光部的區域的穿透光線 的強度分佈資料，並掌握上述半透光部的穿透光強度與上 述透光部或上述遮光部的穿透光強度的差及/或比例。 在具有構造4的本發明的灰階光罩的檢查方法中，由 2130-9291-PF;Chentf 11 200848920 於從上述攝影影像資料取得上述灰階光罩的半透光部、透 光部以及遮光部的區域的穿透光線的強度分佈資料，並掌 握上述半透光部的穿透光強度與上述透光部或上述遮光部 的牙透光強度的差及/或比例，根據該穿透光強度的差及/ 或比，可正確地評估灰階光罩的特性。該差或比由於光罩 的使用而密切地與被轉印體上形成的光罩圖案的形狀相 關，與光阻圖案上所產生的斷差的高度差或比有關。 [構造5 ] ^ 在具有構造1至構造4其中之一的灰階光罩的檢查方 法中，k上述攝影影像資料所得到的灰階光罩的上述穿透 光的強度分佈資料，掌握既定的門檻值以上及/或既定門檻 值以下的區域的尺寸，而求出使用上述灰階光罩做曝光時 斤轉P的上述遮光部、上述透光部或上述半透光部所對應 的圖案的尺寸。 在具有構造5的本發明的灰階光罩的檢查方法中，由 於攸上述攝影影像資料所得到的灰階光罩的上述穿透光的 強度Μ資料，掌握既定的門襤值以上及/或既定門檻值以 下的區域的尺寸’而求出使用上述灰階光罩做曝光時所轉 、述遮光一、上述透光部或上述半透光部所對應的圖 案的尺寸’因此可重現曝光裝置中的曝光條件，可良好地 進行灰階光罩的性能評估及缺陷檢查。 [構造6 ] 、、 冑構& 1至構造5其中之—的灰Ρ》光罩的檢查方 法中’從上述攝影影像資料所得到的灰階光罩的上述穿透 2130-9291-PF;Chentf ' 200848920 的強度分佈資料，掌握既定的門插值以上及/或既定門檻 值以下的區域的有無及區域的尺寸，檢測出使用上述灰階 先罩而曝先時所轉印的缺陷的有無以及轉印的情況的尺 寸。. ，在具有構造6的本發明的灰階光罩的檢查方法中，由 於從上述攝影影像資料所得到的灰階光罩的上述穿透光的 強度分佈資料’掌握既定的門檻值以上及/或既定門檻值以 下的區域的有無及區域的尺寸’檢測出使用上述灰階光罩 而曝光時所轉印的缺陷的有無以及轉印的情況的尺寸，因 此可重現曝光裝置中的曝光條件，可判斷缺陷是否要修 正，並可良好地進行灰階光罩的缺陷檢查。 [構造7] 、在具有構造1至構造6其中之一的灰階光罩的檢查方 法中’上述灰階光罩的半透光部具有鄰接於-或以上的上 述遮光部的區域，#由獲得鄰接於上述半透光部的上述遮 光部的區域的穿透光線的強度分佈資料，求出在曝光裝置 中穿透該區域的曝光光線的光強度以及由該曝光光線㈣ 印的圖案的形狀。 在具有構造7的本發明的灰階光罩的檢查方法，由於 上述灰階光罩的半透光部具有鄰接於一或以上的上述遮光 部的區域，藉由獲得鄰接於上述半透光部的上述遮光部的 區域的穿透光線的強度分佈資料，求出在曝光裝置中穿透 該區域的曝光光線的光強度以及由該曝光光線所轉印=圖 案的形狀，因此可重現曝光裝置令的曝光條件，可良好地 2130-9291-PF/Chentf 13 200848920 進行灰階光罩的性能評估。 [構造8] 在具有構造1至構造7其中之一的灰階光罩的檢查方 法中，上述灰階光罩中的半透光部為具有在上述曝光料 下的解析界限以下的微細圖案的元件，藉由調節上述對物 透鏡系及上述攝影裝置至少其中之一的光軸方向的位置， 得到該微細圖案被散焦而&為非解析狀態的攝影影像資 料。 在具有構造8的本發明的灰階光罩的檢查方法中，由 於上述灰階光罩中的半透光部為具有在上述曝光條件下的 解析界限以下的微細圖案的元件，藉由調節上述對物透鏡 系及上述攝影裝置至少其中之一的光軸方向的位置，得到 該微細圖案被散焦而成為非解析狀態的攝影影像資料，因 此可重現曝光裝置中的曝光條件，可良好地進行使用微細 圖案而形成的灰階光罩的性能評估。 [構造9] 、在具有構造1至構造8其中之一的灰階光罩的檢查方 法中，灰階光罩為修正白缺陷或黑缺陷的元件。於此，白 缺卩曰為曝光光線的穿透量比所希望的量大的缺陷，黑缺陷 為曝光光線的穿透量比所希望的量小的缺陷。 在具有構造9的本發明的灰階光罩的檢查方法中，由 於灰階光罩為修正白缺陷或黑缺陷的元件，因此可判斷修 正疋否可良好地進行。 [構造10] 2l30~929l~PF;Chentf 14 200848920 在具有構造1至構造7其中之一的灰階光罩的檢杳方 法中，上述灰階光罩的半透光部為在上述透明基 透光膜形成。 + 在具有構造1 0的本發明的灰階光罩的檢查方法中，由 於上述灰階光罩的半透光部為在上述透明基板上由半透光 膜形成，可良好地進行使用半透光膜所形成的灰階光罩的 性能評估。 [構造11 ] 在具有構造10的灰階光罩的檢查方法中，上述灰階光 罩為修正白缺陷或黑缺陷的元件。 在具有構造11的本發明的灰階光罩的檢查方法中，由 於灰階光罩為修正白缺陷或黑缺陷的元件，因此可判斷修 正是否可良好地進行。 ^ [構造12] 在具有構造11的灰階光罩的檢查方法中，白缺陷或黑 缺的修正係由形成與上述半透光膜不同的組成的修正膜 實施。 、 在具有構造12的本發明的灰階光罩的檢查方法中，由 於白缺陷或黑缺陷的修正係由形成與上述半透光膜不同的 組成的修正膜實施，因此可判斷修正是否可良好地進行。 然後，本發明的液晶裝置製造用灰階光罩的製造方法 具有以下的構造。 [構造13] 其特徵為具有構造丨至構造12的其中之一的灰階光罩 2130~9291-PF；chentf 15 200848920 . 的檢查方法的檢查工程。 在具有構造1 3的本發明的液晶裝置製造用灰階光罩 的製造方法中，由於具有構造1至構造12的其中之一的灰 階光罩的檢查方法的檢查工程，可製造缺陷被充分地修正 的良好的液晶裝置製造用灰階光罩。 而且’本發明的圖案轉印方法具有以下的構造。 [構造14] ^ 其特徵為使用構造1 3的灰階光罩的製造方法所製造 的液晶裝置製造用灰階光罩，由曝光裝置以既定波長的光 線進行曝光，而將圖案轉印至被轉印體。 在具有構造14的本發明的圖案轉印方法中，由於使用 構造1 3的灰階光罩的製造方法所製造的液晶裝置製造用 灰階光罩，由曝光裝置以既定波長的光線進行曝光，而將 圖案轉印至被轉印體，可進行良好的圖案轉印。 [構造15] | 使用在透明基板上形成包含遮光部、透光部以及穿透 曝光光線的一部份的半透光部的圖案的灰階光罩，藉由曝 光裝置的曝光’將圖案轉印至被轉印體上，其中預先從檢 查裝置的光源所發出的既定波長的光束經由照明光學系照 射至上述灰階光罩，穿透該灰階光罩的光束經由對物透鏡 系而由攝影裝置做攝影，而取得複數個照射條件中的攝影 影像貧料，根據由上述複數個照射條件所得到的攝影影 像，決定上述曝光裝置進行圖案轉印時的曝光條件。 在具有構造15的本發明的圖案轉印方法中，由於預先 2130-9291-PF;Chentf 16 200848920 從檢查裝置的光源所發出的既定波長的光束經由㈣光學 糸照射至上述灰階光罩，穿透該灰階光罩的 透=而㈣影裝置做攝影，而取得複數個照射 二:景“广料’根據由上述複數個照射條件所得到的攝影 -像，決定上述曝光裝置進行圖案轉印 定的灰階光罩，可預先知道得到光罩使用:最： •^仔到的轉印圖案的曝光條件。 又’由具有構造15的圖案轉印方法，根據預先由複數 個照射條件所得到的攝影影像，決定曝光裝置的圖案轉印 %的曝光條件，因此對於既定的灰階光罩，提供一種圖荦 轉印方法，可預先知道得到光罩使 的曝光條件。 w印圖案 料如上所述’本發明提供可良好地進行灰階光罩的性能 汗估及缺陷檢查的灰階光罩的檢查方法，又，提供一種使 用該灰階光罩的檢查方法的液晶裝置製造用灰階光罩的製 造方法及圖案轉印方法。 、 而且，本發明的光罩的檢查方法具有以下的構造。 [構造16] 使用在透明基板上形成包含微細圖案的遮光圖案，在 既定的曝光條件下’對該光罩照射曝光光線，在該曝光停 件下’為了使該微細圖案成為非解像，使用將與該遮光圖 案不同的圖案形狀形成於被轉印體上的圖案轉印方法，呈 中藉由預先近似上述曝光條件的曝光條件或者是掌握與上 述曝光條件的相關的假定惧止 7攸疋曝先條件而對該光罩做測試曝 2130-9291-PF;Chentf 17 200848920 光’藉由該測試曝光，取得該光罩的在該曝光條件下或該 假定曝光條件下的穿透光的光強度分佈資料。In the inspection method of the gray scale mask having the configuration 1, the light source is emitted to one of the J g line, the h line or the 1 line, or a light beam of any two or more of the above. In the inspection method of the gray scale reticle of the present invention having the configuration 2, since the light source emits at least one of a g-line, an h-line or an i-line, or a beam of any of the above two or more types, the reproducible exposure device In the exposure conditions, the performance evaluation and defect inspection of the gray scale mask can be performed well. v ^ b, in the case of a large-scale large-scale device that is directly on the disaster day, corresponding to the pattern size, the amount of exposure light from the surface of the exposure light rate is prioritized over the resolution, and the exposure light is not monochromatic light, but a mixed plural is used. Light beams of light in a wavelength region. In the present invention, the exposure map obtained in the exposure apparatus can be corrected and reproduced in comparison with the conventional inspection method of the light source of the single-color green light detection. [Configuration 3] ^ In the configuration... White' gray scale light In the method of inspecting the cover, the number of openings of the illuminating light and the opening of the objective lens system are as follows: opening of the illumination optical system in the exposure apparatus: approximately equal to the number and 2130-9291-PF of the objective lens system; 10 200848920 . Number of openings. The number of openings of the inspection side optical system of the gray scale mask of the present invention having the structure 3 and the opening and closing of the objective lens system are in contrast to the number of openings of the illumination optical system in the exposure apparatus and the objective lens system. The number of openings, so that the exposure conditions in the exposure skirt can be reproduced, and the performance evaluation and defect inspection of the gray scale mask can be performed well. For example, regarding the semi-transmissive portion of the "fine pattern form", the resolution of the objective lens system that penetrates the ash (the ray is exposed to the exposure light of the mask) is large due to the amount of exposure light that is sufficient for the translucent portion. The effect is that if the resolution of the objective lens in the inspection device is different from the resolution in the exposure device, the performance evaluation and defect inspection of the gray scale mask cannot be performed satisfactorily. Even in the "semi-transmissive film form", adjacent to The light-shielding portion sandwiches the two sides, and from the image state of the light-shielding portion, the resolution of the objective lens system that images the exposure light causes the amount of exposure light that penetrates the semi-transmissive portion to be affected, when inspecting In the device, the resolution of the object I (4) is different from the resolution in the exposure apparatus (the performance evaluation and the defect of the gray scale mask cannot be satisfactorily performed.) Therefore, the present invention can be satisfactorily evaluated. [Construction 4] In the inspection method of the gray scale mask having one of the configurations 1 to 3, it is sufficient to have the following items: obtaining the semi-transmissive portion, the light-transmitting portion of the gray-scale mask, and the light-transmitting portion from the photographic image data cover The intensity distribution data of the light passing through the region of the light portion, and grasping the difference and/or the ratio of the transmitted light intensity of the semi-transmissive portion to the transmitted light intensity of the light transmitting portion or the light blocking portion. In the method for inspecting the gray scale mask of the present invention, the region of the semi-transmissive portion, the light-transmitting portion, and the light-shielding portion of the gray-scale mask is obtained from the above-mentioned photographic image data by 2130-9291-PF and Chentf 11 200848920. Transmitting the intensity distribution data of the light, and grasping the difference and/or the ratio of the transmitted light intensity of the semi-transmissive portion to the light transmission intensity of the light transmitting portion or the light shielding portion, according to the difference between the transmitted light intensity and / or ratio, the characteristics of the gray scale mask can be correctly evaluated. The difference is more closely related to the shape of the mask pattern formed on the transferred body due to the use of the mask, and the pattern generated on the resist pattern The height difference or the ratio of the gap is related. [Configuration 5] ^ In the inspection method of the gray scale mask having one of the structures 1 to 4, the above-mentioned penetration of the gray scale mask obtained by the above-mentioned photographic image data Light intensity distribution data, master the established door The size of the region corresponding to the value or more and/or the predetermined threshold value is equal to or smaller than the size of the region below the predetermined threshold value, and the size of the pattern corresponding to the light-shielding portion, the light-transmitting portion, or the semi-transmissive portion that is used when the gray scale mask is used for exposure is determined. In the inspection method of the gray scale reticle of the present invention having the structure 5, the intensity of the transmitted light of the gray scale reticle obtained by the photographic image data is grasped by a predetermined threshold value and/or Or the size of the region below the predetermined threshold value, and the size of the pattern corresponding to the light-shielding, the light-transmitting portion, or the semi-transmissive portion which is rotated when the gray scale mask is used for exposure is determined. The exposure conditions in the exposure apparatus can perform the performance evaluation and defect inspection of the gray scale mask well. [Structure 6], 胄 && 1 to 5 其中 的 Ρ Ρ Ρ Ρ 光 检查 检查The above-mentioned penetration of the gray scale mask obtained from the above-mentioned photographic image data 2130-9291-PF; the intensity distribution data of the Chentf '200848920, grasping the presence or absence of the region above and below the predetermined threshold value and/or the predetermined threshold value Inch, and detects the presence or absence of exposure while the size of the case to the transferred and the transfer of the defects using the first gray cover. In the inspection method of the gray scale mask of the present invention having the structure 6, the intensity distribution data of the transmitted light of the gray scale mask obtained from the photographic image data is more than a predetermined threshold value and/or Or the presence or absence of the area below the predetermined threshold value and the size of the area 'detects the presence or absence of defects transferred during exposure using the gray scale mask and the size of the transfer, so that the exposure conditions in the exposure apparatus can be reproduced It can be judged whether the defect is to be corrected, and the defect inspection of the gray scale mask can be performed well. [Configuration 7] In the inspection method of the gray scale mask having one of the structures 1 to 6, the semi-transmissive portion of the gray scale mask has an area adjacent to the above-mentioned light-shielding portion, #由Obtaining intensity distribution data of the transmitted light adjacent to the region of the light shielding portion of the semi-transmissive portion, and determining the light intensity of the exposure light that penetrates the region in the exposure device and the shape of the pattern printed by the exposure light (four) . In the inspection method of the gray scale mask of the present invention having the structure 7, since the semi-transmissive portion of the gray scale mask has a region adjacent to one or more of the light shielding portions, by obtaining the semi-transmissive portion adjacent thereto The intensity distribution data of the light passing through the region of the light shielding portion is used to determine the light intensity of the exposure light that penetrates the region in the exposure device and the shape of the pattern transferred by the exposure light, so that the exposure device can be reproduced The exposure conditions of the order can be well evaluated by the performance of the gray scale mask 2130-9291-PF/Chentf 13 200848920. [Configuration 8] In the inspection method of the gray scale mask having one of the structures 1 to 7, the semi-transmissive portion in the gray scale mask is a fine pattern having a resolution lower than the resolution limit under the exposure material. The element is obtained by adjusting a position of the objective lens system and at least one of the imaging devices in the optical axis direction to obtain a photographic image in which the fine pattern is defocused and is in an unresolved state. In the inspection method of the gray scale mask of the present invention having the structure 8, since the semi-transmissive portion in the gray scale mask is an element having a fine pattern below the analysis limit under the above-described exposure conditions, by adjusting the above The position of the objective lens system and at least one of the imaging devices in the optical axis direction is such that the fine pattern is defocused and becomes a non-analytical photographic image data, so that the exposure conditions in the exposure device can be reproduced, which is good Performance evaluation of a gray scale reticle formed using a fine pattern was performed. [Configuration 9] In the inspection method of the gray scale mask having one of the configurations 1 to 8, the gray scale mask is an element for correcting white defects or black defects. Here, the white defect is a defect in which the amount of penetration of the exposure light is larger than a desired amount, and the black defect is a defect in which the amount of penetration of the exposure light is smaller than a desired amount. In the inspection method of the gray scale mask of the present invention having the configuration 9, since the gray scale mask is an element for correcting white defects or black defects, it can be judged whether or not the correction can be performed satisfactorily. [Structure 10] 2l30~929l~PF; Chentf 14 200848920 In the inspection method of the gray scale mask having one of the structures 1 to 7, the semi-transmissive portion of the gray scale mask is transparent in the above transparent substrate Light film formation. In the inspection method of the gray scale mask of the present invention having the structure 10, since the semi-transmissive portion of the gray scale mask is formed of a semi-transmissive film on the transparent substrate, the use of the semi-transparent film can be satisfactorily performed. Performance evaluation of the gray scale reticle formed by the light film. [Configuration 11] In the inspection method of the gray scale mask having the configuration 10, the gray scale mask is an element for correcting white defects or black defects. In the inspection method of the gray scale mask of the present invention having the configuration 11, since the gray scale mask is an element for correcting white defects or black defects, it can be judged whether or not the correction can be performed satisfactorily. [Configuration 12] In the inspection method of the gray scale mask having the configuration 11, the correction of the white defect or the black defect is performed by the correction film which has a composition different from that of the above-described semi-transmissive film. In the inspection method of the gray scale mask of the present invention having the structure 12, since the correction of the white defect or the black defect is performed by the correction film which is different in composition from the semi-transmissive film, it can be judged whether the correction is good or not. Conducted. Then, the method of manufacturing a gray scale mask for manufacturing a liquid crystal device of the present invention has the following structure. [Construction 13] It is characterized by an inspection process of an inspection method having a gray scale reticle 2130 to 9921-PF having a configuration 丨 to one of the structures 12; and a pentf 15 200848920 . In the manufacturing method of the gray scale reticle for manufacturing a liquid crystal device of the present invention having the configuration 13 3, the defect can be sufficiently manufactured due to the inspection process of the inspection method of the gray scale reticle having one of the structures 1 to 12 A gray-scale reticle for the manufacture of a good liquid crystal device. Further, the pattern transfer method of the present invention has the following configuration. [Structure 14] The gray scale mask for manufacturing a liquid crystal device manufactured by the method for manufacturing a gray scale mask using the structure 13 is exposed by light of a predetermined wavelength by an exposure device, and the pattern is transferred to the image. Transfer body. In the pattern transfer method of the present invention having the structure 14, a gray scale mask for manufacturing a liquid crystal device manufactured by using a method for manufacturing a gray scale mask of the structure 13 is exposed by light of a predetermined wavelength by an exposure device, By transferring the pattern to the object to be transferred, good pattern transfer can be performed. [Configuration 15] | Using a gray scale mask that forms a pattern including a light shielding portion, a light transmitting portion, and a portion of a semi-light transmitting portion that penetrates exposure light on a transparent substrate, the pattern is rotated by exposure of the exposure device Printing onto the object to be transferred, wherein a light beam of a predetermined wavelength emitted from a light source of the inspection device is irradiated to the gray scale mask through the illumination optical system, and a light beam penetrating the gray scale mask is passed through the objective lens system The photographing apparatus performs photographing, and obtains photographed image poor materials in a plurality of irradiation conditions, and determines exposure conditions when the exposure apparatus performs pattern transfer based on the photographed images obtained by the plurality of irradiation conditions. In the pattern transfer method of the present invention having the configuration 15, the light beam of a predetermined wavelength emitted from the light source of the inspection device is irradiated to the gray scale mask through the (four) optical ray, in advance, due to 2130-9291-PF; Chentf 16 200848920 Through the gray-scale reticle through the (four) shadow device for photography, and obtain a plurality of illumination two: the scene "wide material" according to the photographic image obtained by the plurality of illumination conditions, the above-mentioned exposure device is determined to perform pattern transfer The fixed gray scale mask can be known in advance to obtain the use of the mask: the most: • the exposure condition of the transfer pattern to be taken. The 'pattern transfer method with the structure 15 is obtained according to a plurality of irradiation conditions in advance. The photographic image determines the exposure condition of the pattern transfer of the exposure device. Therefore, for a predetermined gray scale reticle, a transfer method of the image is provided, and the exposure conditions obtained by the reticle can be known in advance. The present invention provides a method for inspecting a gray scale mask which can perform a performance sweat evaluation and a defect inspection of a gray scale mask well, and further provides an inspection method using the gray scale mask A method of manufacturing a gray scale mask for producing a crystal device, and a pattern transfer method. The method for inspecting a mask according to the present invention has the following structure. [Structure 16] A light-shielding pattern including a fine pattern is formed on a transparent substrate, Under the predetermined exposure conditions, 'the reticle is irradiated with exposure light, and under the exposure stopper', in order to make the fine pattern non-resolution, a pattern shape different from the light-shielding pattern is formed on the object to be transferred. a pattern transfer method, wherein the mask is tested by exposure conditions by pre-approximating the exposure conditions of the above exposure conditions or by grasping the precautions associated with the exposure conditions described above; 2130-9291-PF; Chentf 17 200848920 Light's exposure of the test to obtain light intensity distribution data of the illuminating light of the reticle under the exposure conditions or under the assumed exposure conditions.

根據構造16的光罩的檢查方法，由於使用在透明基板 上形成包含微細圖案的遮光圖案，在既定的曝光條件下， 對该光罩照射曝光光線，在該曝光條件下，為了使該微細 圖案成為非解像，f用將與該遮光圖案不同的圖案形狀形 成於被轉印體上的圖案轉印方法，其中藉由預先近似上述 曝光條件的曝光條件或者是掌握與上述曝光條件的相關的 饭又曝光條件而對該光罩做測試曝光，藉由該測試曝光， 取得該光罩的㈣曝光條件下或該假料光條件下的穿透 光的光強度分佈資料，因此可評估實際的光罩使用時的轉 P像於此，假定曝光條件相對於實際的曝光機的曝光條 件即使曝光強度及曝光波長不同，藉由將係數乘上測試 曝光所得到的光強度分佈資料等的演#，可容易地模擬實 際的曝光裝置的曝光條件下的光強度分佈，而稱為曝光條 i [構造17] 、>在透明基板上形成有透光部、遮光部以及半透光部， 該半透光部為在該透明絲切形成的穿料光光'㈣一 邛知的半透光膜’在該光罩的檢查方法中，該半透光膜係 由光穿透率具有波長依存性的材料製#，藉由預先近似上' 述曝光條件㈣純件mm料上料純件的相關 的假定曝光條件而對該光罩做測試曝光，藉由該測試曝 先，取得該光罩的在該曝光條件下或該假定曝光條件下的 2130-9291-PF；Chentf 18 200848920 牙透光的光強度分佈資料。 根據構造17的光罩的檢查方法，由於在透明基板上形 成有透光邛、遮光部以及半透光部，該半透光部為在該透 明基板上所形成的穿透曝光光線的一部份的半透光膜，在 忒光罩的榀查方法中，該半透光膜係由光穿透率具有波長 依^ |±的材料製成’藉由預先近似上述曝光條件的曝光條 件或者疋草握與上述曝光條件的相關的假定曝光條件而對According to the inspection method of the reticle of the structure 16, since the light-shielding pattern including the fine pattern is formed on the transparent substrate, the reticle is irradiated with exposure light under a predetermined exposure condition, and in the exposure condition, in order to make the fine pattern In the non-resolution, f is a pattern transfer method in which a pattern shape different from the light-shielding pattern is formed on the transfer target, wherein the exposure condition in which the exposure condition is approximated in advance or the correlation with the exposure condition is grasped The film is exposed to the test condition and the exposure of the mask is performed. By the exposure of the test, the light intensity distribution data of the transmitted light under the (four) exposure condition or the false light condition of the photomask is obtained, so that the actual evaluation can be performed. The rotation P at the time of use of the reticle is assumed to be the same, and it is assumed that the exposure condition is different from the exposure condition of the actual exposure machine, even if the exposure intensity and the exposure wavelength are different, and the light intensity distribution data obtained by multiplying the coefficient by the test exposure is performed. The light intensity distribution under the exposure conditions of the actual exposure apparatus can be easily simulated, and is referred to as an exposure strip i [Configuration 17], > on a transparent substrate Forming a light-transmitting portion, a light-shielding portion, and a semi-transmissive portion, wherein the semi-transmissive portion is a light-transmitting light formed by cutting the transparent wire, and a semi-transmissive film is known in the inspection method of the reticle The semi-transmissive film is made of a material having a wavelength dependence of light transmittance, and the reticle is obtained by preliminarily approximating the relevant assumed exposure conditions of the pure condition of the exposure condition (4). The test exposure is performed, and by the test exposure, the light intensity distribution data of the 2130-9291-PF; Chent 18 200848920 tooth of the reticle under the exposure condition or the assumed exposure condition is obtained. According to the inspection method of the reticle of the structure 17, since the light-transmissive 邛, the light-shielding portion, and the semi-transmissive portion are formed on the transparent substrate, the semi-transmissive portion is a part of the penetrating exposure light formed on the transparent substrate. a semi-transmissive film in which the semi-transmissive film is made of a material having a light transmittance of a wavelength of ±±, by an exposure condition that preliminarily approximates the above exposure conditions or The sedge holds the assumed exposure conditions associated with the above exposure conditions and

该光罩做測試曝光，藉由該測試曝光，取得該光罩的在該 曝光條件下或該假定曝光條件下的穿透光的光強度分佈資 料因此可#估實際的光罩的使用時的轉印像。 [構造18] /、有構k 1 6或構造17的光罩的檢查方法中，上述 測試曝光係由包含於上述曝光條件中的曝光光線的一或二 種乂上的波長進仃，藉由演算所得到的上述光強度分佈資 料，而近似上述曝光條件。 、The reticle is subjected to test exposure, and the light intensity distribution data of the illuminating light of the reticle under the exposure condition or the assumed exposure condition is obtained by the test exposure, thereby estimating the actual reticle use Transfer the image. [Configuration 18] In the inspection method of the photomask having the configuration k 16 or the structure 17, the test exposure is performed by wavelengths on one or two kinds of pupils of the exposure light included in the above exposure conditions. The above light intensity distribution data obtained by the calculation is calculated to approximate the above exposure conditions. ,

根據構造1 8的光罩的檢查方法 罩。 可製造良率高的光 [構造1 9 ] 包含構造16至構造a 的光罩的製造方法。 的其中之一的光罩的檢查方法 ，在使用光罩而曝光的 因此可穩定地生產顯 根據構造1 9的光罩的製造方法 階段中，由於正確地掌握曝光條件 示I置等的電子顯示器。 [構造2 0 ] 2l30-9291-PF;Chentf 19 200848920 在構造16至構造18的其中之一中，上述測試曝光在 不同的曝光條件下進行複數次所得到的複數個該光強度分 佈為料，而決定對该光罩進行曝光的曝光條件的圖案轉印 方法。 根據構造20的圖案轉印方法，由於上述測試曝光在不 同的曝光條件下進行複數次所得到的複數個該光強度分佈 資料，而決定對該光罩進行曝光的曝光條件，藉由反覆進 行光罩的曝光而減少求得最佳條件的負荷。 【實施方式】 以下，針對實施本發明的最佳實施型態作說明 [本發明的灰階光罩的檢查方法的概要] 在本發明的灰階光罩的檢查方法中，成為被檢查體的 灰階光罩為在透明基板的主表面上形成遮光部、透光邻以 及半透光部’不僅包含做為產品的已完成的灰階光罩，也 包含在製造灰階光罩的過程中的中間體。 本發明的灰階光罩的檢查方法為在灰階光罩使用時， 做出近似於與進行曝光的曝光裝置的曝光條件相同的曝光 條件’藉由曝光裝置中的曝光將轉印至被轉印體的影像以 攝影裝置而得到所捕捉的光強度分佈資料的方、、去 該灰㈣罩的檢查方μ，根據由攝影裝置 于先強度分佈’被轉印體上的顯像後的光阻的圖案 =的修正值，㈣行包含影響殘膜量的㈣的穿的 變動的各種解析、評估。 20 2130-9291-PF；Chentf 200848920 口―此該榀查方法具有檢查FPD製造用的光 下顯著的效果，而B B ^ ^ j五’即使在液晶裝置製造用的灰階光罩 中取適合溝膜電晶體（以下稱TFT)製造用的方法。在該 或中&於製造效率及成本上有利，除了多使用灰階光 — 半透光。卩的尺寸為極細微，而且必須是精緻的。 [貝c*本：月的灰階光罩的檢查方法的檢查裝置的構造] 在κ施本《明的灰階光罩的檢長方法時使用檢查裝 置。在該檢查裝置中，如第i圖所示，成為被檢查體的灰 階光罩3由料保持部（光罩保持裝置…所保持。該光罩 保持部3a在灰階光罩3的主平面呈略錯直的狀態下，支持 該灰階光罩3的下端部及側緣部附近，使該灰階光罩3傾 斜而固定保持。該光罩保持部3a可保持作為灰階光罩3的 大型、各種尺寸的灰階光罩3。即，在該光罩保持部3a中， 由於主要支持主平面略呈錯直的狀態的灰階光罩3的下端 ^即使灰階光草3的尺寸不同，可用相同支持構 灰階光罩3的下端部。於此，所謂的大型灰階光罩是指主寺 平面的一邊超過簡_的尺寸的光罩，例如主平面為 1220mmxl 400_而厚度為13麗的尺寸的光罩。 …、 、於此，所謂略錯直為鉛直或略傾斜狀態，即第ι圖令 二二表二：錯直(錯直面)起的角度在10度以内的狀態， 直起2度至10度的角度’更佳的是從錯直起4 度至10度傾斜的狀態。 之4 如此，藉由使用使灰階光罩3傾斜而支持的光罩 部h在保持灰階光罩3的過程中’可防止灰階光罩3倒 2130-9291-PF；Chentf 21 200848920 .轉，可穩定地進行光罩3的保持、固定。而且，當完全錯 直地保持灰階光罩3時，灰階光罩3的全部重量集中在下 女而4 ’灰階光罩3損傷的可能性增加。藉由使用使灰階光 罩3傾斜而支持的的丨罩保持冑，由複數個支持點分散 灰階光罩3的重量，可防止灰階光罩3的損傷。 如此，在檢查裝置中，由於使灰階光罩3的主平面略 呈起直而保持灰階光罩3，抑制檢查裝置的設置面積的增 ( 大，同時抑制粒子落下至灰階光罩3上。 忒檢查裝置具有發出既定波長的光束的光源1。該光 源1可使用i素燈、金屬冑亮度燈、卿燈（超高墨水銀 等。 該光源1為經過檢查而使用灰階光罩3進行曝光的曝 光裝置中的曝光光線相同，又最好使用發出具有大略相等 的波長分佈的檢查光。具體而言，該檢查光包含至少运線 (波長436nm)、h線（波長4〇51^)或i線（波長365nm)其中 ( 之一，最好包含全部的波長成分，而且，可適用包含該等 各波長成分中任意二種以上的混合光。而且，在調整該等 各波長成分的混合比日夺，可使用光學濾光器等的波長選擇 濾光器6。 通常，在fit FPDf造用的大型光罩的曝光之際，由 於多使用上述波長的混合光，在該檢查裝置中，在適用所 希望的光強度比例的混合光時，所希望的光強度比例最好 根據實際所使用的曝光裝置的光源特性而決定。 在該檢查裝置中，從光源i發出的檢查光的波長分佈 2l30-9291-PF;Chentf 22 200848920 • 與曝光裝置中所使用的曝光光線的波長分佈相同或大略相 等，可進行反應實際的曝光條件的檢查。即，藉由曝光光 線，在白色光下見到缺陷者在曝光裝置中作為正常圖案而 操作，相反地，在白色光下未見到缺陷者在曝光裝置中不 作為正常圖案而操作。 或者，其他較佳樣態，本檢查裝置的光源1可照射單 一波長的曝光光線，除了可進行單一波長的灰階光罩的穿 , 透光的解析之外，單一波長的曝光光線由複數個單一波長 ' 攝影而得到的攝影資料，同時由演算適用複數個波長的混 合光時的穿透光而推導，可做模擬混合光曝光。即，由單 一波長的假定曝光條件做測試曝光，藉由與預先掌握的實 際的曝光條件相關，可模擬在實際曝光條件下的曝光。 上述係有關於實際上由灰階光罩曝光而轉印之際，若 曝光光線的分光特性不同，則解像度會不同的情況。即， 最小的解像尺寸與對物透鏡系的開口數⑽成反比，而且 ( 與曝光光線波長成正比，成為曝光裝置的曝光光線的i線 〜g線的波長分佈中，特別是在i線的強度為支配性的曝 光光線中，其解像力高，而在g線為支配性的光線中，其 解像力低。對應於此，由於灰階光罩的解像狀態不同，對 於灰階先罩的檢杳，进每·赴十、由曾 迎似4點或凟异，而必須得到對實際 曝光的檢查結果。 $ 而且，在使用半透光膜的灰階光罩的情況下，該半透 光膜的光穿透率具有波長依存性的情況下，藉由曝光/光線 的分光特性使穿透率產生變化。如此，進行預先反應實際 2130-9291-PF;Chentf 23 200848920 m • 的曝光條件的檢查是重要的，因此，本發明的方法是特別 有效的。 該檢查裝置具有照明光學部2，其導引來自光源！的 檢查光線，並將檢查光線照射至由光罩保持部3a所保持的 灰階光罩3上。該照明光學系2為了使開口數（NA)為可變， 而具備開口光圈機構2-1。而且，該照明光學系2最好更 具備視野光圈2-2，用於調整灰階光罩3中的檢查光線的 照射範圍。通過該照明光學系2的檢查光線照射至由光罩 保持部3a所保持的灰階光罩3。 照射至灰階光罩3的檢查光線係穿透該灰階光罩3而 入射對物透鏡系4。該對物透鏡系4具備開口光圈機構 而使開口數（ΝΑ)為可變。該對物透鏡系4包括供穿透灰階 光罩3的檢查光線入射而對該光束做無限遠修正而使其成 為平行光線的第一群（模擬透鏡）4a、以及使通過該第一群 的光束成像的第二群（成像透鏡）。 在錢查農置中，照明光學系2的開口數與對物透鏡 系4的開口數的比為可變，即σ值（相關性）為可變。而且， 如上所述，由於開口數及σ值為可調整，可近似於適用成 為被檢查體的光罩3 & hr & # $ ^ 1 u ^疋旱^的曝先裝置的光學系，可對該灰階部 的轉印像做相當實際的模擬。 ◊ t過對物透鏡系4的光束係從攝影元件(攝影裝置 受光。該攝影元件5拍攝灰階光罩3的像。該攝影元件5 可使用例如CCD等的攝影元件。 然後’在該檢杳裝詈中凡古 一衣置〒δ又有次算部（演算裝置）11、 2130-9291-PF;Chentf 24 200848920 &制裝置）14以及顯示部（顯示裝置）】2，進行對於 攝々凡件5所得到的攝影影像的影像處理、演算與既定的 門檻直的比較與顯示等1算部n可由 ： 功能實現。 ，秀π 又，在該檢查裝置中，對於使用既定的曝光光線所得 到的攝影影像或根據此所得到的光強度分佈資料，由演曾 部Η進行既定的演算，可求出在使用其他曝光光線的條Ζ 下的攝影影像或光強度分佈資料。例如，在該檢查裝置中， g線、h線以及！線為相同強度比的曝光條件下得到光強度 分佈時，可求出g線、h線及i線為i : 2: ι的強度比: 曝純件下進行曝光的情況的光強度分佈。藉此，在該檢 查裝置中’對灰階光草曝光的曝光裝置的個體差異及隨著 時間變化的波長變動也包含在内’可進行重現或近似實際 上所使用的曝光裝置的曝光條件的評估。又，使用該灰階 光罩而將圖案轉印至被轉印體上時，對所形成的光阻圖 案，在假設所希望的光阻的殘膜量的情況下，判斷是否達 成此情況或簡便地求出達成的最佳的曝光條件。 在使用該檢查裝置的本發明的灰階光罩的檢查方法 中，照明光學系2、對物透鏡系4以及攝影元件5分別配 置於夾持使主平面略錯直保持的灰階光罩3而相向的位置 上，在使兩者的光軸-致的狀態下’進行檢查光線的照射 及受光。該等照明光學系2、對物透鏡4以及攝影元件5 由支持部13-卜13-2及移動操作部(移動操作農置)π可 移動操作地支持。該移動操作部15使照明光學系2、對物 2l30-9291-PF;Chentf 25 200848920 透鏡系4以及攝影元件 仟b彼此的先軸一致之同時，對於灰 階光罩3的主平面傲丞> 爻千仃私動。在該檢查裝置中，藉由設 置士此的#動‘作部i 5 ’即使在檢查大型的灰階光罩時， 使該灰階光罩3不於早并# 士亚二^ 干仃於主平面的方向移動，而可橫越 灰階光罩3的主平面的全面進行檢查，又可選擇性地檢查 主平面上的所希望的部位。According to the inspection method of the reticle of the configuration 18. Light with high yield can be produced [Configuration 1 9] A method of manufacturing a photomask including the structure 16 to the structure a. One of the inspection methods of the reticle, in the stage of the manufacturing method using the reticle for exposure, which can stably produce the reticle according to the configuration 19, the electronic display due to the correct grasp of the exposure conditions . [Configuration 20] 2l30-9291-PF; Chentf 19 200848920 In one of the configurations 16 to 18, the above test exposure is performed under a plurality of exposure conditions to obtain a plurality of the light intensity distributions. A pattern transfer method for determining exposure conditions for exposing the mask. According to the pattern transfer method of the structure 20, the plurality of the light intensity distribution data obtained by performing the plurality of times under different exposure conditions are determined, and the exposure conditions for exposing the mask are determined, and the light is repeatedly performed. The exposure of the cover reduces the load for optimum conditions. [Embodiment] Hereinafter, a description will be given of a preferred embodiment of the present invention. [Outline of the inspection method of the gray scale mask of the present invention] In the inspection method of the gray scale mask of the present invention, it becomes an object to be inspected. The gray scale mask is formed on the main surface of the transparent substrate, and the light-transmitting adjacent portion and the semi-transmissive portion 'include not only the completed gray scale mask as a product but also in the process of manufacturing the gray scale mask. Intermediates. The gray scale mask of the present invention is inspected by using the same exposure condition as that of the exposure apparatus for performing exposure when the gray scale mask is used. 'Transfer to be transferred by exposure in the exposure apparatus. The image of the print is obtained by the photographing device, and the image of the captured light intensity distribution data, the inspection surface μ of the ash (four) cover, and the light after the development on the object to be transferred according to the prior intensity distribution of the photographing device The correction value of the pattern of the resistance = (4) The line contains various analyses and evaluations of the variation of the wear of the (four) which affects the amount of the residual film. 20 2130-9291-PF; Chentf 200848920 - This method has the effect of checking the light used in the manufacture of FPD, and BB ^ ^ j 5' is suitable for the ditch in the gray-scale mask for the manufacture of liquid crystal devices. A method for producing a film transistor (hereinafter referred to as TFT). It is advantageous in terms of manufacturing efficiency and cost in this or medium & in addition to the use of gray scale light - semi-light transmission. The size of the cymbal is extremely subtle and must be exquisite. [Bei C* This: The structure of the inspection device for the inspection method of the gray scale mask of the month] The inspection device is used when the method of inspection of the gray scale mask of κ is applied. In the inspection apparatus, as shown in Fig. i, the gray scale mask 3 to be the inspection object is held by the material holding portion (the mask holding device .... The mask holding portion 3a is the main member of the gray scale mask 3 When the plane is slightly staggered, the lower end portion and the side edge portion of the gray scale mask 3 are supported, and the gray scale mask 3 is tilted and fixed. The mask holding portion 3a can be maintained as a gray scale mask. A large-sized, various-sized gray scale reticle 3 of 3, that is, in the reticle holding portion 3a, the lower end of the gray scale reticle 3 mainly supporting the state in which the main plane is slightly staggered is even the gray scale light grass 3 Different sizes can be used to support the lower end of the gray scale mask 3. The so-called large gray scale mask refers to a mask whose one side of the main temple plane exceeds the size of the simple_image, for example, the main plane is 1220 mmxl 400_ The reticle of the size of 13 angstroms. ..., here, the so-called slightly wrong straight or slightly inclined state, that is, the first ι 图 二 二 二 二 二 二: wrong straight (wrong face) angle is 10 degrees In the state of the inside, the angle of 2 degrees to 10 degrees straight is better than the state of tilting from 4 degrees to 10 degrees from the straight line. 4 Thus, the reticle portion h supported by tilting the gray scale reticle 3 can prevent the gray scale reticle 3 from falling 2130-9291-PF during the process of maintaining the gray scale reticle 3; Chentf 21 200848920. The holding and fixing of the mask 3 can be stably performed. Moreover, when the gray scale mask 3 is completely misaligned, the entire weight of the gray scale mask 3 is concentrated on the lower female and the 4' gray scale mask 3 is damaged. By increasing the weight of the gray scale mask 3 by a plurality of support points, the damage of the gray scale mask 3 can be prevented by using the cover which is supported by tilting the gray scale mask 3, and the damage of the gray scale mask 3 can be prevented. In the apparatus, since the gray scale mask 3 is held while the main plane of the gray scale mask 3 is slightly straightened, the increase in the installation area of the inspection apparatus is suppressed (large while suppressing the particles from falling onto the gray scale mask 3). The device has a light source 1 that emits a light beam of a predetermined wavelength. The light source 1 can use an i-lamp, a metal illuminating lamp, a illuminating lamp (ultra-high ink silver, etc. The light source 1 is exposed using a gray scale mask 3 after inspection. The exposure light in the exposure device is the same, and it is better to use the emission to have a big The inspection light of the wavelength distribution. Specifically, the inspection light includes at least a transmission line (wavelength 436 nm), an h line (wavelength 4 〇 51 Ω), or an i line (wavelength 365 nm), one of which preferably contains all wavelengths. In addition, it is possible to apply a mixed light including any two or more of the respective wavelength components. Further, in order to adjust the mixing ratio of the respective wavelength components, a wavelength selective filter 6 such as an optical filter can be used. Generally, in the exposure of a large reticle made of fit FPDf, the mixed light of the above-mentioned wavelength is often used, and in the inspection apparatus, the desired light intensity is applied when the mixed light of a desired light intensity ratio is applied. The ratio is preferably determined according to the characteristics of the light source of the exposure device actually used. In the inspection apparatus, the wavelength distribution of the inspection light emitted from the light source i is 2l30-9291-PF; Chentf 22 200848920 • The wavelength distribution of the exposure light used in the exposure apparatus is the same or substantially equal, and the actual exposure conditions can be reacted. Check. Namely, by the exposure light, a person who sees a defect under white light operates as a normal pattern in the exposure apparatus, and conversely, a person who does not see a defect under white light does not operate as a normal pattern in the exposure apparatus. Alternatively, in other preferred embodiments, the light source 1 of the inspection device can illuminate a single wavelength of exposure light, except for the single-wavelength gray-scale reticle, the analysis of the light transmission, and the single-wavelength exposure light is composed of a plurality of The photographic data obtained by photographing at a single wavelength is derived from the transmitted light when the mixed light of a plurality of wavelengths is applied, and the simulated mixed light exposure can be performed. That is, the test exposure is performed from the assumed exposure condition of a single wavelength, and the exposure under actual exposure conditions can be simulated by correlating with the actual exposure conditions grasped in advance. In the case where the transfer is actually performed by exposure of the gray scale mask, the resolution may be different if the spectral characteristics of the exposure light are different. That is, the minimum resolution size is inversely proportional to the number of apertures (10) of the objective lens system, and (in proportion to the wavelength of the exposure light, becomes the wavelength distribution of the i-line to the g-line of the exposure light of the exposure apparatus, especially in the i-line The intensity of the dominant exposure light is high, and the resolution is low in the dominant light of the g line. Corresponding to this, since the resolution state of the gray scale mask is different, for the gray scale mask Check and enter, go to ten, and meet with 4 points or surprise, and must get the result of the actual exposure. $ Moreover, in the case of a gray-scale mask using a semi-transparent film, the semi-transparent When the light transmittance of the light film has wavelength dependence, the transmittance is changed by the spectral characteristics of the exposure/light. Thus, the pre-reaction actual 2130-9291-PF is performed; the exposure condition of the Chentf 23 200848920 m • The inspection is important, and therefore, the method of the present invention is particularly effective. The inspection apparatus has an illumination optics 2 that guides the inspection light from the light source! and illuminates the inspection light to be held by the reticle holder 3a. Gray The illumination optical system 2 includes an aperture stop mechanism 2-1 for making the number of apertures (NA) variable. The illumination optical system 2 preferably further includes a field of view aperture 2-2 for The irradiation range of the inspection light in the gray scale mask 3 is adjusted. The inspection light passing through the illumination optical system 2 is irradiated to the gray scale mask 3 held by the mask holding portion 3a. The inspection light irradiated to the gray scale mask 3 Passing through the gray scale mask 3 and entering the objective lens system 4. The pair of lens units 4 is provided with an aperture stop mechanism to make the number of openings (ΝΑ) variable. The object lens system 4 includes a gray scale for penetration. The inspection light of the mask 3 is incident on the light beam to be infinitely corrected to become a first group of parallel rays (analog lens) 4a, and a second group (imaging lens) for imaging the light beams passing through the first group. In the Qiang Nongong, the ratio of the number of openings of the illumination optical system 2 to the number of openings of the objective lens system 4 is variable, that is, the σ value (correlation) is variable. Moreover, as described above, the number of openings and The σ value is adjustable and can be approximated to the mask 3 & hr &# $ ^ 1 u ^ The optical system of the exposure device can make a fairly realistic simulation of the transfer image of the gray-scale portion. ◊ The beam of the objective lens system 4 is from the photographic element (photographic device) The photographic element 5 captures an image of the gray scale reticle 3. The photographic element 5 can use a photographic element such as a CCD, etc. Then, in the inspection device, the 一 衣 δ has a secondary calculation unit ( Calculation device) 11, 2130-9291-PF, Chentf 24 200848920 & device 14 and display unit (display device) 2, performing image processing, calculation, and predetermined image processing of the captured image 5 The door comparison and display, etc. 1 calculation unit n can be realized by: function. In the inspection apparatus, in the inspection apparatus, the photographic image obtained by using the predetermined exposure light or the light intensity distribution data obtained therefrom is subjected to a predetermined calculation by Yan Zeng, and other exposures can be obtained. Photographic image or light intensity distribution data under the light. For example, in the inspection device, g line, h line, and ! When the light intensity distribution is obtained under the exposure conditions of the same intensity ratio, the intensity ratio of the g-line, the h-line, and the i-line to i: 2: ι can be obtained: the light intensity distribution in the case where the exposure is performed under the exposed article. Thereby, in the inspection apparatus, the individual difference of the exposure apparatus exposed to the gray scale grass and the wavelength variation which changes with time are also included. The exposure conditions of the exposure apparatus which can be reproduced or approximated are actually used. evaluation of. Moreover, when the pattern is transferred onto the transfer target by using the gray scale mask, it is determined whether or not the photo resist pattern is formed, assuming the desired residual film amount of the photoresist or The best exposure conditions achieved are easily determined. In the inspection method of the gray scale mask of the present invention using the inspection apparatus, the illumination optical system 2, the objective lens system 4, and the imaging element 5 are respectively disposed on the gray scale mask 3 which is held so that the main plane is slightly misaligned and held. At the opposite positions, the inspection light is irradiated and received by the optical axis of the two. The illumination optical system 2, the objective lens 4, and the imaging element 5 are movably supported by the support portion 13-b 13-2 and the movement operation portion (moving operation). The movement operation unit 15 makes the illumination optical system 2, the object 2130-9291-PF, the lens line 4 of the Chentf 25 200848920 lens unit 4, and the photographic element 仟b coincide with each other, and the main plane of the gray scale mask 3 is proudly >爻 仃 仃 private. In the inspection apparatus, by setting the "moving" portion i 5 ' of the Shih, even when inspecting the large gray scale mask, the gray scale mask 3 is not made early and #士亚二^ The direction of the main plane is moved, and the overall inspection of the main plane of the gray scale reticle 3 can be performed, and the desired portion on the main plane can be selectively inspected.

士此由支持邛13 —1、13-2以及移動操作部15所支 持的照明光學系2及對物透鏡系4，如第2圖所示，與光 軸略呈正交的方向上接受由個別的本身重量所產生的重 力。因此，在該照明光學系2以及對物透鏡系4之間，有 光軸容易偏移之虞。因此，在該檢查裝置中，即使照明光 學系2底及對物透鏡4其中之一的光轴相對於另一的光轴 產生偏移的情況下也不會妨礙檢查，如第3圖及第4圖所 示，由照明光學系2使檢查光線照射至灰階光罩3上的範 圍係包含對物透鏡纟4的視野，而且，比該對物透鏡系4 的視野還寬。照明範圍的直徑冑好相對於對物透鏡系4的 視野的直徑大30%以上，而且最好大3〇%以上且小3〇〇%以 下。檢查光線照射的範圍可由光源j的位置及照明光學系 2的視野光圈2-2調整。 而且，由照明光學系2照射至灰階光罩3上的檢查光 線的光束内的光量分佈（照度分佈）最好如第5圖所示地 小，滿足5%以内的照度分佈的照明範圍的直徑最好比對物 透鏡系4的視野的直徑大30%以上。更好的是在3〇%以上、 1 0 (U以下的範圍。而且，更好的是，上述直徑的照明範圍 26 2130-9291-PF;Chentf 200848920 - 的照度分佈為2%以内。在檢查光的光束内的光量分佈大的 兄下特別疋對物透鏡系4的光轴偏移的情況下，即使 求出灰階光罩3的穿透光的光強度分佈，會有無法正確地 檢查灰階光罩3的狀態之虞。 又’在該檢查裝置中，為了使照明光學系2以及對物 透鏡系4的光軸在一定以上的偏移時可進行修正，最好具 備微調整該照明光學系2及對物透鏡系4的光轴的相對角 ，度的角度微調機構。藉由具備如此的角度調整機構，容易 才木作而可使5亥妝明光學系2及對物透鏡系4的光軸經常地 一致。角度調整機構中，以支持部“一丨支持照明光學系2 的一方，以支持部13-2支持對物透鏡系4及攝影元件5, 以移動操作部15驅動該等元件，而已控制部14控制。 在忒核查裝置中，藉由控制部14及移動操作部1 5， 對物透鏡系4以及攝影元件5可分別於光軸方向移動操 作。藉此，該等對物透鏡系4以及攝影元件5彼此獨立地 i 使相對於灰階光罩3的相對距離做變化。在該檢查裝置 中，藉由對物透鏡系4及攝影元件5獨立地於光軸方向移 動，可在近似使用灰階光罩3而進行曝光的曝光裝置的狀 態下進行攝影。在近似曝光中由於本身重量而產生弯曲的 灰階光罩的目的中，該檢查裝置的對物透鏡系4最好可於 光軸方向移動。又，刻意地使對物透鏡系4的位置乃至攝 影元件6的位置產生偏移，藉由攝影元件5，可對灰階光 罩3的模糊的像做攝影。>此，#由評估模糊的像（散焦影 像），如後所述，可判斷灰階光罩的性能及缺陷的有無。“又^ 2130-9291-PF;Chentf 27 200848920 對於近似灰階光罩3的模糊像的轉印像，可調整對物透鏡 系4的開口數（NA)，此為較佳的方法。 f 孩核查裝置的控制部丨4係控制照明光學系2的開口光 圈機構2 1及視野光圈2 — 2、對物透鏡系4的開口光圈機 構4 1及k作移動部1 5。該控制部^ 4在使用該檢查裝置 的灰P白光罩的才欢查方法中，在對物透鏡系4的開口數及α 值、准持於既疋值的狀態下，藉由操作部工5使照明光學系 對物透鏡系4及攝影元件5的光軸—致的狀態下，由光 罩保持邛3a所保持的灰階光罩3於平行於主平面的方向上 移動操作之同時，伸餅从、乐 便對物透鏡糸4及攝影元件5對光軸方 向彼此獨立地移動操作 ， 卞所明的σ值，如前所述，意義為 照明光學系2的開口數另剩_ ‘、未地/ 數及對物透鏡糸4的開口數的比。 如此’在該檢杳裝 一凌置十，曝光條件，即對物透鏡系4 的開口數及σ值可自由，敕 _ .., 凋整。该核查裝置，又在使物透鏡 糸4乃至攝ς 尤 力位置做偏移而散焦的狀態下，進行 攝衫’可;f欢查焦點偏移办 仏成的線λ變動及灰階光罩的轉 ρ像卓。又，如第6圖所示 甘 度分佈^ 田攝〜凡件5所得到的光強 又刀师J做數值化而得到， 值做比鲈，/ m , g由將该先強度與既定的門檻 光阻膜的轉印形狀）。又並乂狀（形成於被轉印體上的 與既定的門檀值比較，對轉丨的光強度 部分的尺寸做數值化而得到。〃…的光阻殘膜量 [本發明的光罩的檢查方法] 第7圖為使用上述 歪衣置而貫施的光罩的檢查方 2130-9291-PF；Chentf 200848920 查方法不僅是光罩，灰階光罩也 法的順序的流程圖。該 同樣適用。 使用該檢查裝置而進行的本發 中，如望7 又 的光罩的檢查方法 r如弟7圖所示，在步驟stl中 而脾忠栗。 使主平面略呈錯直面 3 !::3载置保持於光罩保持部^如上所述，光罩 ==傾斜。接著’在步驟st2中，設定光源i的波 對物透鏡系4的開口數〉 在如、 7閉口歡CWA)、σ值（σ )等光學條 。在以後的步驟中， 制部mm 14τ自動地執行。即，控 f °己憶控制程式的記憶裝置（未圖示），在控制之 攸屺憶裝置讀出控制程式而可實施控制動作。 接著，在步驟st3巾，判斷必須做波長合成演算的情 況為何。纟不必波長合成演算的情況下，進入步驟st4, 在必須波長合成演算的情況下，進入步驟St8。 ^驟st4中，照明光學系2與對物透鏡系4以及攝 〜凡件5分別配置於夾持著主平面4呈錯直的％| 3而相 向的位置上，在使兩者的光軸一致的狀態下，使移動（平行 私動）至光罩3的觀察位置上。然後，在步驟st5中，進行 光軸方向的位置調整（焦點調整）。接著，在步驟s 16中， 檢查光的照射及攝影元件5受光而進行攝影，進入步驟 st7 ° 另一方面，在步驟st8中，照明光學系2與對物透鏡 系4以及攝影元件5分別配置於夾持著主平面略呈鉛直的 光罩3而相向的位置上，在使兩者的光軸一致的狀態下， 使移動至光罩3的觀察位置上。然後，在步驟st 9中，進 29 2130-9291-PF；Chentf 200848920 行光軸方向的位詈炯 °。正（焦點調整）。接著，在步驟stl 中’既定波長條件的於左，^ — 核查光的照射及攝影元件5受光而進 仃攝衫，進入步驟stu。 在步驟s 111中，主丨ι θ 断疋否對波長合成演算所必要的影 像全部做攝影。若不對必要的圖像全部做攝影，則進入步 =⑴，變更波長條件，回到步驟stlG。若對必要的影像 王賴攝影’則進入步驟stu’進行波長合成演算，進入 步驟st7。 在步驟st7中，對所得到的資料進行解析，取得光強 度刀佈貝料接著’進入步驟st工4而進行穿透率的計算。 [關於灰階光罩] 於此，針對在本發明的灰階光罩的檢查方法中成為被 才欢查體的灰階光罩做說明。 具備TFT的液晶顯示器（以下稱lcd)與陰極線管（㈣ 由於具有薄型及低耗電的有利點，現在受到廣泛的使用。 在LCD中的TFT中，具有設置在配列在陣列上的各晝素的 TFT的構以的TFT基板以及對應於各畫素而配置紅⑻、綠 ⑹、I (B)的晝素圖案的彩色濾光器經由液晶相而重疊的 構造。如此的LCD製造工程數多，即使是m基板也要使 用5至6片的光罩來製造。 在如此的狀況下，提出以四片光罩製造m基板的方 法。δ亥方法藉由使用具有冑光部、透光部以及半透光部（灰 階部）的灰階光罩而減少使用光罩的片數。 在第8圖及第9圖中，其為使用灰階光罩的TFT基板 2130-9291-PF;Chentf 200848920 的製造工程的一例。 首先，如第8A圖所示，在玻璃基板2〇1上，形成閘極 用金屬膜，藉由使用光罩的顯影工程形成閘極2〇2。之後， 依序形成閘極絕緣膜203、第一半導體膜（a_Si)2〇4、第二 半‘體膜（N+a-Si)205、源極汲極用金屬膜206及正型光 阻膜207。 接著，如第8B圖所示，使用具有遮光部1〇1、透光部 102及半透光部（灰階部）1〇3的灰階光罩1〇〇，對正型光阻 膜207做曝光顯影，而形成第一光阻圖案207A。該第一光 阻圖案207A係覆蓋TFT通道部、源極汲極形成區域及資料 線形成區域，而且TFT通道形成區域比源極汲極形成區域 還薄。 接著，如第8C圖所示，以第一光阻圖# 2〇7A作為光 罩，對源極汲極用金屬膜206、第二及第一半導體膜2〇5、 204做银刻。接著’如第9A圖所示，氧氣所造成的灰化 (ashing)使光阻膜207全體減少，除去tft通道部形成區 域的薄的光阻膜，形成第二光阻圖案2〇7β。之後，如第9β 圖所示’以第二光阻圖案2G7B作為光罩，㈣源極汲極用 金屬膜206而形成源極/汲極2〇6A、2〇讣，接著，蝕刻第 二半導體膜2G5。最後，如第9C圖所示，使殘留的第二光 阻圖案2 0 7 B剝離。 在此所使用的灰階光1100,如帛10圖所示，具有對 應於源極/汲極的遮光部1(HA、1G1B、透光部iG2及邝了 通道部1〇3.。該灰階部m為形成遮光圖案腦的區域， 2130-9291-PF;Chentf 31 200848920 遮 置 及遮光圖帛1G3A通常以鉻及鉻化合物等的相同材料所構 成的相同厚度的膜所形成。使用如此灰階光罩的大型 光圖案103A係由使用灰階光罩1〇〇的大型LC])用曝光裝 的解像界限以下的微細圖案所構成。遮光部i〇u、ι〇ΐβ 用曝光裝置的解像界限在階段方式的曝光裝置中約為 鏡面投射式的曝光裝置中約為4#m。因此，在灰階 邛103中，穿透部1〇3B的空間寬度及遮光圖案“Μ的線 寬分別在曝光裝置的解像界限以下，例如不滿3#m。 % i兄中，簡單地掌握可容許何種程度的變動等的生產管理 在如此細微圖案型的灰階部1〇3的設計中，將具有遮 "P 1 01A 1 〇 1B與透光部1 〇 2的中間半透光（灰階）效果的 微細圖案選擇成線與空間㉟、網點型、或其他的圖案。又， 在線與空間型的情況下’考慮線寬多A、光穿透的部分與 遮：的部分的比率為何以及全體的穿透率設計到何程度而 伋叹。十。但疋貫際上在使用光罩時，如此微細的圖案要如 何掌握是否能轉印至被轉印體±的方法。〖，即使在灰階 ，罩的製造中，線寬的中心值的管理及光罩内的線寬變動 管理等，雖然要求相當難的生產技術，在實際的光罩使用 及良率的平衡。 另一方面，提出灰階部由半透光性的膜所形成。藉由 將半透光膜用於灰階部上，灰階部的曝光量變少，而可實 施網點曝光（half-w)。又藉由使用半透光膜於灰階部 在X °十中僅需檢讨全體透光率為多少是必要的，即 使在灰階的製造中’藉由選擇半透光膜的膜種（膜材質）及 32 2130-9291-PF；Chentf 200848920 膜厚而可生產灰階光罩。因此，在如此的半透光膜型的灰 階光罩的製造中，僅需進行半透光膜的膜厚控制，比較容 易管理。又，在灰階光罩的灰階部形成TFT通道部的情況 下，由於只要是半透光膜就很容易實施曝光構圖，TFT通 道部的形狀也可能是複雜的形狀。 半透光膜型的灰階光罩例如可如下所述地製造。於 此，舉TFT基板的圖案為一例而做說明。該圖案，如前所 述，由對應於TFT基板的源極及汲極的圖案所構成的遮光 部101、對應於TFT基板的通道部的圖案所構成的半透光 部1 03、以及形成於該等圖案的周圍的透光部i 〇2所構成。 百先，準備在透明基板上依次形成半透光膜與遮光膜 的光罩胚料，於該光罩胚料上形成光阻膜。接著，藉由進 行圖案描繪而顯像，在對應於圖案的遮光部及半透光部的 區域形成光阻圖案。接著，以適當的方法進行#刻，藉此 除去對應於未形成光阻圖案的透光部的區域的遮光膜與其 下層的半透光膜而形成圖案。 ，如此，形成透光部102,同時，形成對應於圖案的遮 光。卩101與半透光部1〇3的區域的遮光圖案。然後，除去 殘遠的光阻圖案之後’再度在基板上形成光阻膜，而進行 圖案描繪而顯像’藉此在對應於圖案的遮光部101的區域 上形成光阻圖案。 一接著藉由適當的蝕刻，除去未形成光阻圖案的半透 光部103的區域的遮光膜。藉此’形成半透光膜的圖案的 半透光部103 ’同時，形成遮光部1〇1的圖案。 2130-9291-PF/Chentf 33 200848920 的問：用::：的半透光膜的灰階光罩中也會有生產管理上 、 半透光膜的光穿透率及曝光π 件由暖#也仏" 丁入’尤展置的解像條 著州Γ長而變化，而且曝光光線的波長特性隨 者曝先裝置而異，由於光罩的性能要素报多，在光罩生產 階段很難掌握。 7隹尤罩生產 [關於灰階光罩的檢查方法] 的灰階光罩的檢查方法中，進行如前所述的 二:Γ 及性能上的檢查，進行反應實際曝光條 件的核擬，而評估缺陷的有無、性能的優劣。 :且’在灰階光罩尹，形成於光罩的圖案形狀由使用 :罩的曝光而影響所形成的被轉印體上的光阻的 在適當的範圍内，半透光㈣❹是否 丰透先部與遮光部的邊界上直立是如何 (銳利度或模糊度）。 (1)「微細圖案型」 具有微細圖案所構成的半透光部的「微細圖案型」的 =階光罩的情況下，在使用灰階光以實際進行曝光時， 从細圖案未解像’以實質上平均的穿透率與假想上非解像 白^狀悲下使用。該狀態在灰階光罩的製造過程中，或在出 貨的階段’甚至在進行缺陷修正的階段中，必須做檢查。 題’本發明的發明人提出使用本發明的檢查 衣置的私查方法會有顯著效果。 即’在本發明的灰階光罩的檢查方法中’減少穿透半 透光部的曝光光線的量’藉由減低照射至該區域中的光阻 2130-9291-PF/Chentf 34 200848920 的”、、射里而選擇性地改變光阻的膜厚的灰階光罩，重現實 k的曝光條件而進行高精度的檢查。或者是課由計算實際 勺J、光條件而异出，適用於預先掌握與實際曝光條件的關 連的條件而進行曝光（測試曝光）。由測試曝光所得到的光 強度刀佈貝料藉由該關連而加工，可進行在實際的曝光條 件下的資料的模擬。 然後，在該檢查方法中所取得得資料，對於給檢查裝 置的光孥條件（略等於使用的曝光裝置的光學條件）做適當 的叹计’若為適當形成的光罩圖案，如第u圖(右圖)所 不，形成於半透光部的微細圖案成為如實質上略單一濃度 般的非解像狀態。此部分的濃度表示使用該灰階光罩的情 況下的該部分的穿透率，藉由該部分由半透光部形成的光 阻膜的殘留量決定。另一 力万面，先罩的设計相對於曝光光 學條件為不適當的情況以及在製造工程中圖案形未成既定 的形狀、尺寸的情況，由於半透光部的濃度及半透光部的 :狀等顯示與上述的正常狀態相異的狀態，藉由與正常狀 悲的比較，可判斷檢查部分的良宥。 因此，藉由上述檢查裝置 出現上述的適當的非解像部分 件若與實際上適用於灰階光罩 可說灰階光罩的性能充足。 而檢查灰階光罩的情況下， (即，出現灰階部）的曝光條 的曝光條件大體上一致，則 、而且：在亡述的非解像狀態令得到攝影影像時，經過 必要的適當計算，評估半透光部與遮 以由 疋丨的邊界部分的銳 利度，可預測該部分的光阻圖案的立 版心狀。例如，該灰 2130-9291-PF;Chentf 35 200848920 - 階光罩為製造薄膜電晶體的情況下，可預測對應於薄膜電 晶體的性能上特別重要的通道部與源極部及汲極部的邊界 的光阻圖案的立體形狀。 因此，本發明的灰階光罩的檢查方法，在實際的曝光 條件下，可適用於檢查具有解像界限以下的微細遮光圖案 的灰階部的灰階光罩。 此時，具有解像度界限以下的微細圖案的光罩3作為 被檢查體被設置於檢查裝置，預先掌握使用該光罩的曝光 裝置的曝光條件，例如對物透鏡系4的開口數及σ值為既 定的值。除此之外，可用根據曝光條件而決定的分光特性。 又，藉由於光軸方向上適當地調整對物透鏡系4的位置， 在攝影元件5的攝影面上，得到微細圖案的非解像狀態的 影像。然後，攝影後的影像資料由演算部u處理，藉此可 传到光罩圖案的光強度分佈。從該攝影影像的形狀及既定 評估點中的光強度資料，可評估光罩3的性能的優劣、缺 陷的有無。 而且，在該檢查裝置中，如第12圖所示，對物透鏡系 4及攝影元件5分別可於光軸方向移動操作，使該等對物 透鏡系4及攝影元件5彼此獨立而相對光罩3做相對距離 的變化，藉此，使用光罩3而進行曝光的曝光裝中，即使 光罩3由於本身重量產生反轉的情況下，可在近似於該曝 光裝置的狀態下進行攝影。即，在該檢查裝置中，可任意 分別調整從光罩3到對物透鏡系4的距離u以及從對物透 鏡系4至攝影元件5的距離L2。χ，使對物透鏡4的位置 2130-9291-PF;Chentf 36 200848920 乃至攝影元件5的位置偏移，藉由攝影元件5可對光罩的 杈糊的影像做攝影。如此藉由評估模糊的影像，可判斷灰 階光罩的性能及缺陷的有無。 (2)「半透光膜型」 在本發明的灰階光罩的檢查方法中，不只是解像界限 以下的微細圖案所構成的半透光部，&可對具有由半透光 膜所形成的半透光部的「半透光膜型」灰階光罩進行檢查。 半透光性的膜，其曝光光線相對於例如透光部的透光率為 10%乃至60%’更好的是可使用4〇%乃至6〇%的膜。 例如如第13圖所不’當在攝影的影像資料中的半透 光部的光強度的峰值成為夠寬的透光部的光強度為 卜遮光部的光強度為_，對於半透光部的透光部的穿 透比率以Ig/(Iw_Ib)表示，可使其成為灰階光罩的評估項 目。藉由該評估項目，可評估是否為具有既定範圍的穿透 率（即’在實際曝光時形成的光阻圖案的光阻厚度成為既定 的厚度）的灰階光罩。 又，給予半透光部（例如通道部）的既定的寬度尺寸的 ，強度為Ig時，如下所述，使用複數個評估項目（參數）， 藉由比較該等參數而可進行參數的評估。The illumination optical system 2 and the objective lens system 4 supported by the support electrodes 13-1 and 13-2 and the movement operation unit 15 are received in the direction orthogonal to the optical axis as shown in Fig. 2 The weight of the individual's own weight. Therefore, between the illumination optical system 2 and the objective lens system 4, the optical axis is easily displaced. Therefore, in the inspection apparatus, even if the optical axis of one of the illumination optical system 2 and the objective lens 4 is shifted with respect to the other optical axis, the inspection is not hindered, as shown in FIG. 3 and As shown in FIG. 4, the range in which the inspection light is irradiated onto the gray scale mask 3 by the illumination optical system 2 includes the field of view of the object lens 纟4, and is wider than the field of view of the objective lens system 4. The diameter of the illumination range is preferably 30% or more larger than the diameter of the field of view of the objective lens system 4, and is preferably more than 3% by weight and less than 3% by weight. The range in which the light is irradiated can be adjusted by the position of the light source j and the field of view aperture 2-2 of the illumination optical system 2. Further, the light amount distribution (illuminance distribution) in the light beam of the inspection light irradiated onto the gray scale mask 3 by the illumination optical system 2 is preferably small as shown in Fig. 5, and satisfies the illumination range of the illumination distribution within 5%. The diameter is preferably 30% or more larger than the diameter of the field of view of the objective lens system 4. More preferably, it is in the range of more than 3〇%, 10% (U), and more preferably, the illumination range of the above diameter is 26 2130-9291-PF; and the illumination distribution of the Chent 200848920 - is within 2%. In the case where the light amount distribution in the light beam of the light is large, especially when the optical axis of the objective lens system 4 is shifted, even if the light intensity distribution of the transmitted light of the gray scale mask 3 is obtained, it may not be correctly checked. In the state of the gray scale mask 3, in the inspection apparatus, in order to correct the optical axes of the illumination optical system 2 and the objective lens system 4 at a certain level or more, it is preferable to provide fine adjustment. The angle between the illumination optical system 2 and the optical axis of the objective lens system 4, and the angle fine adjustment mechanism. With such an angle adjustment mechanism, it is easy to make the optical system 2 and the objective lens. The optical axis of the system 4 is always the same. In the angle adjustment mechanism, the support unit "supports the illumination lens 2, and the support lens 13-2 supports the objective lens system 4 and the imaging element 5 to move the operation portion 15 The components are driven and controlled by the control unit 14. In the verification device By the control unit 14 and the movement operation unit 15, the objective lens system 4 and the imaging element 5 can be moved in the optical axis direction, whereby the objective lens system 4 and the imaging element 5 are independent of each other. The relative distance of the gray scale mask 3 is changed. In the inspection apparatus, the objective lens system 4 and the imaging element 5 are independently moved in the optical axis direction, and the exposure can be performed by using the gray scale mask 3 approximately. The photographing is performed in the state of the exposure apparatus. In the purpose of causing a curved gray scale mask due to its own weight during the approximate exposure, the objective lens system 4 of the inspection apparatus is preferably movable in the optical axis direction. The position of the objective lens system 4 and the position of the photographic element 6 are shifted, and the blurred image of the gray scale mask 3 can be photographed by the photographic element 5. This, by evaluating the blurred image (defocus) Image), as described later, can judge the performance of the gray scale mask and the presence or absence of defects. "And ^ 2130-9291-PF; Chentf 27 200848920 For the transfer image of the blurred image of the gray scale mask 3, can be adjusted The number of openings (NA) of the objective lens system 4, which is Preferably, the control unit f4 of the child verification device controls the aperture stop mechanism 2 1 and the field of view aperture 2 of the illumination optical system 2, and the aperture mechanism 4 1 and k of the objective lens system 4 as the movement unit 15 In the method of checking the ash P white mask using the inspection device, the control unit 4 has an operation unit in a state in which the number of apertures and the alpha value of the objective lens system 4 are in a state of being squatted. In the state where the illumination optical system is in the optical axis of the objective lens system 4 and the photographic element 5, the gray scale reticle 3 held by the reticle holder a3a is moved in the direction parallel to the main plane. , the stretching cake, the Le camera lens 4 and the photographic element 5 are moved independently of each other in the optical axis direction, and the σ value is as described above, and the meaning is that the number of openings of the illumination optical system 2 is left _ ', the ratio of the number of openings to the number of openings of the lens 糸4. Thus, in the inspection, the exposure condition, that is, the number of apertures and the σ value of the objective lens system 4 can be free, 敕 _ .., withered. In the state in which the object lens 糸4 or the 尤 尤 力 position is offset and defocused, the checking device performs a picture λ variation and a gray scale light. The turn of the cover is like Zhuo. In addition, as shown in Fig. 6, the Gandu distribution ^ Tian Photograph ~ The light intensity obtained by the piece 5 is obtained by numerically calculating the value of the knife J, and the value is compared with 鲈, / m , g by the first intensity and the predetermined The transfer shape of the threshold photoresist film). Further, the shape of the light intensity portion of the transition is obtained by numerically comparing the size of the portion of the light intensity of the transition formed on the transfer target (the amount of the residual film of the photoresist [the mask of the present invention] Inspection method] Fig. 7 is a checker 2130-9291-PF of the reticle which is applied by using the above-mentioned smear; Chentf 200848920 The method of checking is not only a reticle, but also a flow chart of the order of the gray scale reticle. The same applies to the present invention, in which the inspection method of the mask is performed as shown in Fig. 7, and in the step st1, the spleen is spleen. The main plane is slightly misaligned 3! ::3 is placed and held in the mask holding portion ^ as described above, the mask == tilt. Then, in step st2, the number of apertures of the wave-to-object lens system 4 of the light source i is set. ), σ value (σ ) and other optical strips. In the subsequent steps, the part mm 14τ is automatically executed. That is, the memory device (not shown) that controls the control program can control the program by reading the control program from the control device. Next, in step st3, it is judged why the wavelength synthesis calculation has to be performed. If the wavelength synthesis calculation is unnecessary, the process proceeds to step st4. If the wavelength synthesis calculation is necessary, the process proceeds to step St8. In step st4, the illumination optical system 2, the objective lens system 4, and the camera member 5 are disposed at positions facing each other with the misalignment of the main plane 4 at a position of %|3, and the optical axes of the two are arranged. In a consistent state, the movement (parallel private movement) is made to the observation position of the reticle 3. Then, in step st5, positional adjustment (focus adjustment) in the optical axis direction is performed. Next, in step s16, the irradiation of the inspection light and the imaging element 5 are received by the light, and the process proceeds to step st7. On the other hand, in step st8, the illumination optical system 2, the objective lens system 4, and the imaging element 5 are disposed, respectively. At a position where the photomasks 3 whose main plane is slightly vertical are opposed to each other, the optical axes of the two are aligned, and moved to the observation position of the mask 3. Then, in step st9, enter 29 2130-9291-PF; Chentf 200848920 is in the direction of the optical axis 詈炯 °. Positive (focus adjustment). Next, in step st1, the predetermined wavelength condition is left, the illumination of the verification light, and the photographic element 5 are received by the light, and the smear is entered, and the process proceeds to step stu. In step s111, the main 丨ι θ is broken to photograph all the images necessary for the wavelength synthesis calculation. If you do not take all the necessary images, go to step = (1), change the wavelength condition, and return to step stlG. If the necessary image is to be photographed, the process proceeds to step stu' for wavelength synthesis calculation, and the process proceeds to step st7. In step st7, the obtained data is analyzed to obtain the light intensity knife cloth and then the 'step 4' is performed to calculate the transmittance. [About the gray scale mask] Here, a description will be given of a gray scale mask which is a well-inspected body in the inspection method of the gray scale mask of the present invention. TFT liquid crystal display (hereinafter referred to as lcd) and cathode wire tube ((4) are widely used due to their advantages of thinness and low power consumption. In TFTs in LCDs, there are various elements arranged on the array. The TFT substrate and the color filter in which the pixel patterns of red (8), green (6), and I (B) are arranged to overlap each other via the liquid crystal phase. The number of LCD manufacturing processes is large. Even if it is an m substrate, it is manufactured using 5 to 6 masks. Under such circumstances, a method of manufacturing an m substrate by using four photomasks has been proposed. The δHel method uses a light-emitting portion and a light-transmitting portion. And a gray scale mask of the semi-transmissive portion (gray-scale portion) to reduce the number of sheets used. In Figures 8 and 9, it is a TFT substrate 2130-9291-PF using a gray scale mask; An example of the manufacturing process of Chentf 200848920. First, as shown in Fig. 8A, a metal film for a gate is formed on a glass substrate 2〇1, and a gate electrode 2〇2 is formed by a development process using a photomask. Forming a gate insulating film 203, a first semiconductor film (a_Si) 2〇4, a second a bulk film (N+a-Si) 205, a source drain metal film 206, and a positive photoresist film 207. Next, as shown in Fig. 8B, the light-shielding portion 1〇1, the light-transmitting portion 102, and A half-light-transmitting portion (gray-scale portion) 1 〇 3 gray-scale mask 1 〇〇, the positive-type resist film 207 is exposed and developed to form a first photoresist pattern 207A. The first photoresist pattern 207A is covered The TFT channel portion, the source drain formation region, and the data line formation region, and the TFT channel formation region is thinner than the source drain formation region. Next, as shown in FIG. 8C, the first photoresist pattern #2〇7A As a photomask, the source drain diode metal film 206, the second and first semiconductor films 2〇5, 204 are silver-etched. Then, as shown in FIG. 9A, ashing caused by oxygen causes light to be lighted. The entire resist film 207 is reduced, and the thin photoresist film of the tft channel portion forming region is removed to form the second photoresist pattern 2〇7β. Thereafter, as shown in the ninth ββ, the second photoresist pattern 2G7B is used as a mask, (4) The source drain electrode is formed of a metal film 206 to form a source/drain 2 〇 6A, 2 〇讣, and then the second semiconductor film 2G5 is etched. Finally, as shown in FIG. 9C, The remaining second photoresist pattern 2 0 7 B is peeled off. The gray scale light 1100 used here has a light shielding portion 1 (HA, 1G1B, light transmitting portion corresponding to the source/drain) as shown in FIG. iG2 and the channel portion 1〇3. The gray-scale portion m is the region where the light-shielding pattern brain is formed, 2130-9291-PF; Chentf 31 200848920 The mask and the shading pattern 帛1G3A is usually made of the same material such as chromium and chromium compounds. A large-sized light pattern 103A using such a gray scale mask is formed of a fine pattern of a large-scale LC using a gray scale mask, and a fine pattern below the resolution limit of the exposure package. The light-shielding portions i〇u and 〇ΐβ are approximately 4#m in the mirror-type exposure apparatus in the stage-type exposure apparatus with the resolution limit of the exposure apparatus. Therefore, in the gray scale 邛103, the spatial width of the penetrating portion 1〇3B and the line width of the light-shielding pattern “Μ are respectively below the resolution limit of the exposure device, for example, less than 3#m. In the sibling, simply grasp Production management such as the degree of change that can be tolerated, in the design of the gray pattern portion 1〇3 of such a fine pattern type, the intermediate semi-transmissive light having the cover "P 1 01A 1 〇1B and the light transmitting portion 1 〇2 The fine pattern of the (grayscale) effect is selected as a line and space 35, a dot pattern, or other pattern. In addition, in the case of an online and a space type, 'think of a line width A, a light penetration portion, and a shadow portion. The reason why the ratio and the overall penetration rate are designed to sigh. Ten. However, when using a reticle, how to master such a fine pattern can be transferred to the method of the transfer body ±. Even in the production of the gray scale, the cover, the management of the center value of the line width, and the management of the line width variation in the reticle, etc., require quite difficult production techniques in the actual use of the reticle and the balance of the yield. On the one hand, it is proposed that the gray scale portion is formed by a semi-translucent film. By using a semi-transmissive film on the gray scale portion, the exposure amount of the gray scale portion is reduced, and half-w exposure can be performed. Further, by using a semi-transparent film in the gray scale portion in X ° ten It is necessary to review only the total light transmittance, even in the manufacture of gray scales, by selecting the film type (membrane material) of the semi-transparent film and the film thickness of 32 2130-9291-PF; Chentt 200848920. Production of gray scale masks. Therefore, in the manufacture of such a semi-transmissive film type gray scale mask, it is only necessary to control the film thickness of the semi-transparent film, which is relatively easy to manage. Also, in the gray of the gray scale mask In the case where the step portion forms the TFT channel portion, since the exposure pattern can be easily performed as long as it is a semi-transmissive film, the shape of the TFT channel portion may be a complicated shape. For example, the semi-transmissive film type gray scale mask can be as follows The pattern of the TFT substrate is described as an example. The pattern is as described above, and the light-shielding portion 101 corresponding to the pattern of the source and the drain of the TFT substrate corresponds to the TFT substrate. a semi-transmissive portion 103 formed by a pattern of the channel portion, and formed in the pattern The surrounding light transmitting portion i 〇 2 is formed. First, a mask blank of a semi-transmissive film and a light shielding film is sequentially formed on the transparent substrate, and a photoresist film is formed on the mask blank. The pattern is drawn and developed, and a photoresist pattern is formed in a region corresponding to the light-shielding portion and the semi-transmissive portion of the pattern. Then, the light-transmitting portion corresponding to the photoresist pattern is not removed by an appropriate method. The light-shielding film of the region and the semi-transmissive film of the lower layer are patterned. Thus, the light-transmitting portion 102 is formed, and at the same time, a light-shielding pattern corresponding to the light-shielding of the pattern and the region of the 半101 and the semi-light-transmitting portion 1〇3 is formed. Then, after the photoresist pattern is removed, the photoresist film is formed again on the substrate, and patterning is performed to develop the image, thereby forming a photoresist pattern on the region corresponding to the light-shielding portion 101 of the pattern. The light-shielding film of the region of the semi-transmissive portion 103 where the photoresist pattern is not formed is then removed by appropriate etching. Thereby, the semi-transmissive portion 103' which forms the pattern of the semi-transmissive film is simultaneously formed with the pattern of the light-shielding portion 1〇1. 2130-9291-PF/Chentf 33 200848920 Q: In the gray-scale reticle of the semi-transparent film with ::: there will also be production management, the light transmittance of the semi-transparent film and the exposure π pieces by the warm # Also 仏 quot 丁 丁 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤 尤Hard to master. In the inspection method of the gray scale mask for the production of the 隹 罩 关于 关于 关于 关于 关于 关于 关于 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰Evaluate the presence or absence of defects and the pros and cons of performance. : and 'in the gray scale reticle Yin, the pattern shape formed in the reticle is affected by the use of: the exposure of the hood affects the photoresist on the transferred body formed in an appropriate range, whether the semi-transmission (four) 丰 is abundant How is the erection on the boundary between the front and the shade (sharpness or ambiguity). (1) "Miniature pattern type" In the case of a "fine pattern type" = order mask having a semi-transmissive portion formed of a fine pattern, when the exposure is actually performed using gray scale light, the fine pattern is not imaged. 'Use the average average penetration rate and the imaginary non-resolution white. This state must be checked during the manufacturing process of the gray scale reticle, or at the stage of the shipment, even during the stage of defect correction. The inventors of the present invention have proposed that the private inspection method using the inspection garment of the present invention has a remarkable effect. That is, 'in the inspection method of the gray scale mask of the present invention, 'reducing the amount of exposure light penetrating through the semi-transmissive portion' by reducing the light resistance to the region 2130-9291-PF/Chentf 34 200848920" , and a gray scale mask that selectively changes the film thickness of the photoresist, and performs high-precision inspection under the exposure conditions of the real k. Or the calculation is performed by calculating the actual spoon J and the light condition, and is suitable for The exposure (test exposure) is performed in advance by grasping the conditions associated with the actual exposure conditions. The light intensity of the test cloth obtained by the test exposure is processed by the correlation, and the simulation of the data under actual exposure conditions can be performed. Then, the data obtained in the inspection method is appropriately stunned for the pupil condition of the inspection device (slightly equal to the optical condition of the exposure device used), if it is a properly formed reticle pattern, as shown in FIG. (Right image) The fine pattern formed in the semi-transmissive portion is in a non-resolution state as a substantially single concentration. The concentration of this portion indicates the penetration of the portion in the case where the gray scale mask is used. rate, The amount of residue of the photoresist film formed by the semi-transmissive portion is determined by this portion. The other cover is not suitable for the exposure optical condition and the pattern shape is not formed in the manufacturing process. In the case of the size, the density of the semi-transmissive portion and the shape of the semi-transmissive portion are different from the normal state described above, and the quality of the inspection portion can be judged by comparison with the normal sorrow. By means of the above-mentioned inspection device, the above-mentioned suitable non-resolution portion can be said to have sufficient performance when it is applied to the gray-scale reticle. In the case of checking the gray-scale reticle, (ie, appears The exposure conditions of the exposure bars of the gray-scale portion are substantially the same, and: when the non-resolution state of the description is made to obtain a photographic image, the necessary calculation is performed to evaluate the semi-transmissive portion and the occlusion. The sharpness of the boundary portion can predict the vertical core shape of the photoresist pattern of the portion. For example, the ash 2130-9291-PF; the Chent 35 200848920 - the reticle for the manufacture of the thin film transistor, predictably corresponds to thin The three-dimensional shape of the photoresist pattern at the boundary between the channel portion and the source portion and the drain portion is particularly important in the performance of the transistor. Therefore, the method for inspecting the gray scale mask of the present invention can be applied under actual exposure conditions. The gray scale mask of the gray scale portion having the fine light-shielding pattern having the resolution limit or less is inspected. In this case, the mask 3 having the fine pattern having the resolution limit or less is provided as an object to be inspected, and the light is used in advance. The exposure conditions of the exposure apparatus of the cover, for example, the number of apertures and the σ value of the objective lens system 4 are predetermined values. In addition, the spectral characteristics determined according to the exposure conditions can be used. The position of the objective lens system 4 is adjusted, and a non-resolution image of the fine pattern is obtained on the imaging surface of the imaging element 5. Then, the image data after the imaging is processed by the calculation unit u, thereby being transmitted to the mask pattern. Light intensity distribution. From the shape of the photographic image and the light intensity data in the predetermined evaluation point, the performance of the reticle 3 and the presence or absence of the defect can be evaluated. Further, in the inspection apparatus, as shown in Fig. 12, the objective lens system 4 and the imaging element 5 are respectively movable in the optical axis direction, and the objective lens system 4 and the imaging element 5 are independent of each other and are opposed to each other. The cover 3 is changed in relative distance, whereby in the exposure apparatus that performs exposure using the mask 3, even if the mask 3 is reversed due to its own weight, photographing can be performed in a state similar to the exposure apparatus. That is, in the inspection apparatus, the distance u from the mask 3 to the objective lens system 4 and the distance L2 from the objective lens system 4 to the imaging element 5 can be arbitrarily adjusted. That is, the position of the objective lens 4 is 2130-9291-PF; the length of the Chentf 36 200848920 or even the photographic element 5 is shifted, and the photographic element 5 can image the blurred image of the reticle. By evaluating the blurred image, the performance of the gray scale mask and the presence or absence of defects can be judged. (2) "Semi-transmissive film type" In the method for inspecting a gray scale mask of the present invention, not only a semi-transmissive portion composed of a fine pattern having a resolution limit or less, but also a semi-transmissive film may be used. The "semi-transmissive film type" gray scale mask of the semi-transmissive portion formed was inspected. The translucent film preferably has a light transmittance of, for example, 10% or even 60%' with respect to the light transmitting portion, for example, a film of 4% by weight or even 6% by weight can be used. For example, as shown in Fig. 13, the light intensity of the light transmissive portion in the semi-transmissive portion of the photographed image data is such that the light intensity of the light-transmitting portion is _, and the light intensity of the light-shielding portion is _. The penetration ratio of the light transmitting portion is expressed by Ig/(Iw_Ib), which makes it an evaluation item of the gray scale mask. With this evaluation item, it is possible to evaluate whether it is a gray scale mask having a predetermined range of transmittance (i.e., the photoresist thickness of the photoresist pattern formed at the time of actual exposure becomes a predetermined thickness). Further, when a predetermined width dimension of the semi-transmissive portion (for example, the channel portion) is given and the intensity is Ig, a plurality of evaluation items (parameters) are used as described below, and the parameters can be evaluated by comparing the parameters.

Ig/(Iw~Ib)= Tg S Ib^~Tg (通道部的穿透率的最低值） (Tg-Tg’ ）/2==Tgc(通道部内穿透率的中央值） 丨T『Tg’ I = Tgd(通道部内穿透率的變化量，範圍） 即，在上述評估中，由攝影影像所得到的灰階光罩的 2130-9291-PF;Chentf 37 200848920 穿透光強度分佈資料而得到半透 宗清杏故疮 "X 通先4、遮光部的 牙透先強度，攸該等數值求得半透光部的穿透率的 值，或者是求得半透光部的穿透率的最低值，或 半透光部的穿透率的中央值，或 侍 —. 疋水传+透光部的穿锈 率的範圍，藉此可進行光罩的評 1 於此，所謂穿透率儀 指相對於遮光部與透光部的穿透 曰 里π產的+透光部的穿透 夏° 其他’藉由光強度分佈所得到的資訊，使用 而對實際上在曝光裝置中曝光 早 兀才所形成的先阻圖案做模 擬，可進行該評估。 ' 如此，在本發明的灰階光罩的檢長方法中，由於可才曰 到與實際的曝光裝詈的成本 ψ 置的曝先條件相同的解像狀態的攝影影 像，灰階光罩的性能、缺陷的有益 3…、J在只際的使用的條件 下進行適當的評估。又，在該情況中，反應實際的曝光條 件下，在半透光部所求得的既定範圍的穿透率是否充足的 檢查’與前述相同’再得到攝影影像時，評估通道部、源 極部與汲極部的邊界部分的銳利度’而可預測曝光後的光 阻的立體形狀。 又，灰階光罩的半透光部，如第14圖所示，在具有鄰 接於一或一個以上的區域的情況下，由如此區域的尺寸、 形狀’產生不同的穿透率。例如，如帛14Α圖所示，由遮 光部夾持兩侧的半透光部的寬度為^時，在該半透光部 的中央部上為半透光部的半透光膜的原本的穿透率。對 此，由遮光部夾持兩侧的半透光部的寬度變成3"、2“ 2130-9291-PF;Chentf 38 200848920 - 般地窄’如第1 4B及1 4C圖所示，在該半透光部的中央部， 比用於半透光部的半透光膜的原本的穿透率低。 與此線寬相依的穿透率的變化係相依於曝光裝置的解 像度而產生的現象。因此，為了適當地預測此穿透率的變 化’必須進行反應實際的曝光條件的模擬。在本發明的檢 查方法中，由於檢查光線的波長分佈、對物透鏡系4的開 口數及σ值配合曝光裝置的條件，可適當地球出與線寬相 依的穿透率的變化。 (3 )是否修正缺陷的判斷 而且’在本發明的灰階光罩的檢查方法中，如前所述， 不僅適用於評估、檢查所製造的灰階光罩，還適用於判斷 是否要做缺陷的修正以及經過修正後的灰階光罩的修正效 果是否充足的檢查，極為有用。 在灰階光罩3上，如第15圖的左上所示，使用具有黑 缺fe的光罩，在既定的曝光條件下做轉印時，如第丨5圖的 右上所示，在該黑缺陷的部分，得到穿透率降低的攝影資 料。又’在灰階光罩3上，如第16圖的左上所示，具有白 缺陷的情況下’如第16圖的右上所示，在該白缺陷的部 分’得到穿透率上升的攝影資料。 然後’即使為黑缺陷的情況下，如帛1 7八圖所示，當 該黑缺陷相當小時，在曝光的狀態下，如第17B圖所示， 穿透率不會減少至門檻值，對轉印圖案不會出現影響。又， 即使為白缺陷的情況下，如第18A圖所示，在該白缺陷足 夠小的情況下’在曝光狀態下，如第18B圖所示，穿透率 2130-9291-PF;Chentf 39 200848920 ' 的上升不會超過轉印的門檻值，對轉印圖案不會出現影響。 如此，在該檢查方法中，藉由適當地設定轉印的門檻 值，在缺陷足夠小的情況下，由攝影元件5所得到的攝: 資料中，可判斷是否有穿透率變化，而可判斷是否需要= ΓΡ 〇 特別是，對於半透光部所產生的白缺陷、黑缺陷，與 正常部分的穿透率的差變小，由圖案的缺陷檢查而判斷良 (宥是有困難的，因此若穿透率與該分佈在所希望的範圍 内，不必狀是否為缺陷，由於有特異的事情，本發明的 檢查方法是非常有利。 (4)缺陷修正後的檢查 而且，在該檢查方法中，半透光膜或微細圖案所構成 的半透光部中，附加性地部分形成半透光膜或與微細圖案 不同的形狀的微細圖案，而修正白缺陷的情況下，或者是 在剝離包含缺陷的圖案的一部份之後，半透光膜或與原2 ( 的微細圖案具有不同形狀的微細圖案部分性地形成而修正 黑缺陷或白缺陷時，可適當地檢查修正結果是否足夠。 於此，黑缺陷的修正可適用FIB(Focused j⑽ Deposition)等的方法，白缺陷的修正可適用雷射 CVD(Chemical Vapor Deposition)等的方法。 而且，根據本發明，附加性地成膜於白缺陷部分而修 正缺陷的情況舆剝離缺陷的一部份而再度成膜而修正缺陷 的情況中，即使再成膜的素材與原來的素材不同的情況 下也可正確地評估曝光時的轉印狀態。如此，由於為了 2130-9291-PF;Chentf 40 200848920 修正缺陷而再度成膜的膜與 +π膜常材具有不同的分光 特性，藉由使用與曝光裝置中 、+尤扃置中的曝先光線不同的波長的檢 -光線做檢查’無㈣#地敎穿透率。但是，採用反應 曝光裝置中的曝光光線的條件，#由適用本發明的方法而 達到上述目的。 根據本發明的灰階光罩的檢查方法，在實際的曝光裝 置的曝光條件下進行檢查，缺陷修正的結果可檢查是否具 有充分的遮光效果或是否具有作為半透光部的效果。又， 在修正之前，藉由實施本發明的灰階光罩的檢查方法而可 決定再成膜的膜厚。 [液晶裝置製造用灰階光罩的製造方法] 在製造液晶裝置製造用灰階光罩中，在公知的工程 中，猎由包含前述的本發明的灰階光罩的檢查方法的檢查 工程的工程，可迅速地製造缺陷被充分地修正後的良好的 液晶裝置製造用的灰階光罩。製造工程為在透明基板上依 次（或與該順序相反）形成半透光膜與遮光膜，藉由使用光 阻的蝕刻工程，使半透光部或半透光膜露出，透光部為使 基板露出的方法，或對於形成於透明基板上的遮光膜，在 半透光部中形成微細圖案，具有透光部使透明基板露出的 方法。 ' [圖案轉印方法] 使用由上述的液晶裝置製造用灰階光罩的製造方法所 製造的液晶裝置製造用灰階光罩，由曝光裝置將既定波長 .的光線做曝光，將既定的圖案轉印至被轉印體上。 2130-9291-PF;Chentf 41 200848920 而且，使用本發明的檢查方法，預先適用複數個照射 條件而進光罩的轉印檢查，由所得到的攝影影像，可決 定實際使用錢光罩時的曝光條件。光罩使用者在使用光 罩之際，#了得到所希望的線寬等，可有效地預先獲知適 用的曝光條件。 【圖式簡單說明】 第1圖為實施本發明的灰階光罩的檢查方法的檢查裝 置的構造的側視圖。 第2圖為上述檢查裝置的照明光學系與對物透鏡系的 位置關係的側視圖。 第3圖為上述檢查裝置的照明光學系與對物透鏡系的 位置關係的立體圖。 第4圖為上述檢查裝置中的照明光學系的照明範圍與 對物透鏡系的攝影範圍的關係的正視圖。 第5圖為上述檢查裝置的照明光學系中照明範圍内的 光強度分佈與對物透鏡系的攝影範圍的關係的圖。 第6圖為上述檢查裝置中所得到的攝影資料進行數值 化的圖。 第7圖為表示上述檢查裝置中所實施的灰階光罩的撿 查方法的順序的流程圖。 第8Α〜8C圖為使用灰階光罩的TFT基板的製造工裎 (前半）的剖視圖。 第9A〜9C圖為使用灰階·光罩的TFT基板的製造工裎 2130-9291-PF;Chentf 42 200848920 (後半）的剖視圖。 々第1。圖為灰階光罩的構造的正視圖。 第11圖為上述檢查裝置中 光部的狀態的圖。 〕攝〜貝科中+透 第1 2圖為上述檢查裝置中 影元件的位置關係的側視圖。4先罩、對物透鏡及攝 第13圖為上述檢查裝置中所得到的攝影資料數值化 而說明半透光部的穿透率的圖。 双值化 第HA〜14C圖為上述檢查裝置所得到的攝 中，說明由遮光部夹持兩側的半透光部的寬度 的 透率的不同的圖。 牙 第15圖為上述檢查裝置中所得到的攝影資料 缺陷的位置的狀態的圖。 …、 第16圖為上述檢查裝置中所得到的攝影資料 缺陷的位置的狀態的圖。 第ΠΑ圖、ΠΒ圖為上述檢查裝置中所得到的攝 料中黑缺陷位置的轉印狀態的圖。 /、 第18A圖、18B圖為上述檢查裝置中所得到的攝 料中白缺陷位置的轉印狀態的圖。 、 【主要元件符號說明】 1〜光源； 2〜照明光學系； 2-1〜開口光圈機構； 2 —2〜視野光圈； 3〜光罩； 4〜對物透鏡系； 2130-9291-PF;Chentf 43 200848920Ig/(Iw~Ib)= Tg S Ib^~Tg (the lowest value of the transmittance of the channel portion) (Tg-Tg' )/2==Tgc (the central value of the transmittance in the channel portion) 丨T『Tg ' I = Tgd (the amount of change in the transmittance within the channel, range) That is, in the above evaluation, the 2130-9291-PF of the gray scale mask obtained from the photographic image; the Chentf 37 200848920 penetrates the light intensity distribution data Get the semi-transparent Zong Qing April's sore "X pass first 4, the opaque strength of the shading part, the value of the transmittance of the semi-transparent part, or the penetration of the semi-transparent part The lowest value of the rate, or the central value of the transmittance of the semi-transmissive portion, or the range of the rust rate of the — 传 + 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 透光 光The permeability meter refers to the penetration of the light-transmitting portion of the light-transmitting portion and the light-transmitting portion, and the other information obtained by the light intensity distribution, which is actually used in the exposure apparatus. This evaluation can be performed by simulating the first resistance pattern formed by exposure. Thus, in the gray scale mask inspection method of the present invention, since the photographic image of the same resolution state as the exposure condition of the actual exposure frame is obtained, the gray scale mask is The performance, the benefits of the defect 3..., J are properly evaluated under the conditions of the use only. Further, in this case, under the actual exposure conditions of the reaction, when the inspection of the predetermined range of the transmittance obtained by the semi-transmissive portion is sufficient, the inspection is performed in the same manner as described above, and the channel portion and the source are evaluated. The sharpness of the boundary portion between the portion and the drain portion can predict the three-dimensional shape of the photoresist after exposure. Further, as shown in Fig. 14, the semi-transmissive portion of the gray scale mask has different transmittances from the size and shape of such a region in the case of having one or more regions adjacent thereto. For example, as shown in FIG. 14A, when the width of the semi-transmissive portion sandwiched by the light shielding portion is ^, the original portion of the semi-transmissive film having the semi-transmissive portion at the central portion of the semi-transmissive portion is Penetration rate. In this regard, the width of the semi-transmissive portion sandwiched by the light shielding portion becomes 3", 2" 2130-9291-PF; and the Chent 38 200848920 is generally narrow as shown in Figs. 1 4B and 14C, The central portion of the semi-transmissive portion is lower than the original transmittance of the semi-transmissive film for the semi-transmissive portion. The variation in the transmittance depending on the line width is a phenomenon depending on the resolution of the exposure device. Therefore, in order to appropriately predict the change in the transmittance, it is necessary to perform the simulation of the actual exposure conditions of the reaction. In the inspection method of the present invention, the wavelength distribution of the inspection light, the number of openings of the objective lens system 4, and the σ value are In accordance with the conditions of the exposure apparatus, it is possible to appropriately change the transmittance of the earth depending on the line width. (3) Whether to correct the judgment of the defect and 'in the inspection method of the gray scale mask of the present invention, as described above, It is very useful for evaluating and inspecting the manufactured gray-scale reticle. It is also useful for judging whether to make corrections for defects and whether the correction of the corrected gray-scale reticle is sufficient. It is extremely useful. As shown at the top left of Figure 15 Using a mask having a black missing fe, when transferring under a predetermined exposure condition, as shown in the upper right of Fig. 5, in the black defect portion, photographic data with reduced transmittance is obtained. On the gray scale mask 3, as shown in the upper left of Fig. 16, in the case of a white defect, as shown in the upper right of Fig. 16, the photographic material having an increased transmittance is obtained in the portion of the white defect. Then Even in the case of a black defect, as shown in Fig. 187, when the black defect is relatively small, in the exposed state, as shown in Fig. 17B, the transmittance is not reduced to the threshold value, and the transfer is performed. The pattern does not have an effect. Also, even in the case of a white defect, as shown in Fig. 18A, in the case where the white defect is sufficiently small 'in the exposure state, as shown in Fig. 18B, the transmittance 2130- 9291-PF; Chentf 39 200848920 'The rise does not exceed the transfer threshold value, and has no effect on the transfer pattern. Thus, in this inspection method, the defect is sufficient by appropriately setting the transfer threshold value In a small case, the photograph taken by the photographing element 5: It is judged whether or not there is a change in the transmittance, and it is judged whether or not it is necessary to determine = ΓΡ 〇 In particular, the difference between the white defect and the black defect generated by the semi-transmissive portion and the transmittance of the normal portion becomes small, and the defect inspection by the pattern is checked. However, it is difficult to judge (better, therefore, if the penetration rate and the distribution are within a desired range, it is not necessary whether the shape is a defect, and the inspection method of the present invention is very advantageous because of a specific matter. Further, in the inspection method, in the semi-transmissive portion including the semi-transmissive film or the fine pattern, a semi-transparent film or a fine pattern having a shape different from the fine pattern is additionally formed, and the correction is performed. In the case of a white defect, or after peeling off a part of the pattern containing the defect, the semi-transmissive film or the fine pattern having a different shape from the original 2 (the fine pattern is partially formed to correct the black defect or the white defect) , you can check if the correction result is enough. Here, the correction of the black defect can be applied to a method such as FIB (Focused j (10) Deposition), and the correction of the white defect can be applied to a method such as laser CVD (Chemical Vapor Deposition). Further, according to the present invention, in the case where the white defect portion is additionally formed and the defect is corrected, and a part of the defect is peeled off and the film is re-formed to correct the defect, even if the material to be film-formed is different from the original material. In the case of the case, the transfer state at the time of exposure can also be correctly evaluated. Thus, the film which is re-formed for the defect of 2130-9291-PF; Chentf 40 200848920 has different spectral characteristics from the +π film common material, and the exposure light in the exposure device is used in the exposure device. Check the different wavelengths - the light is checked for 'no (four) # mantle penetration rate. However, the above object can be attained by applying the method of the present invention using the conditions of the exposure light in the reaction exposure apparatus. According to the inspection method of the gray scale mask of the present invention, the inspection is performed under the exposure conditions of the actual exposure apparatus, and the result of the defect correction can check whether or not it has a sufficient light-shielding effect or whether it has an effect as a semi-light-transmitting portion. Further, before the correction, the film thickness of the re-formed film can be determined by carrying out the inspection method of the gray scale mask of the present invention. [Manufacturing method of a gray scale mask for manufacturing a liquid crystal device] In the production of a gray scale mask for manufacturing a liquid crystal device, in a known project, an inspection project including the inspection method of the gray scale mask of the present invention described above is used. In the engineering, it is possible to quickly manufacture a gray scale mask for manufacturing a good liquid crystal device in which defects are sufficiently corrected. In the manufacturing process, a semi-transmissive film and a light-shielding film are sequentially formed on the transparent substrate (or opposite to the order), and the semi-transmissive portion or the semi-transparent film is exposed by etching using a photoresist, and the light-transmitting portion is made A method of exposing a substrate or a method of forming a fine pattern in a semi-transmissive portion on a light-shielding film formed on a transparent substrate, and having a light-transmitting portion to expose the transparent substrate. [Pattern transfer method] A gray scale mask for manufacturing a liquid crystal device manufactured by the above-described method for manufacturing a gray scale mask for manufacturing a liquid crystal device is used, and a light of a predetermined wavelength is exposed by an exposure device to form a predetermined pattern. Transfer to the transferred body. 2130-9291-PF; Chentf 41 200848920 Moreover, by using the inspection method of the present invention, a plurality of irradiation conditions are applied in advance to transfer inspection of the mask, and the obtained photographic image can be used to determine the exposure when the money mask is actually used. condition. When the reticle user uses the reticle, the desired line width and the like are obtained, and the appropriate exposure conditions can be effectively known in advance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view showing the structure of an inspection apparatus for carrying out an inspection method for a gray scale mask of the present invention. Fig. 2 is a side view showing the positional relationship between the illumination optical system and the objective lens system of the inspection apparatus. Fig. 3 is a perspective view showing the positional relationship between the illumination optical system and the objective lens system of the inspection apparatus. Fig. 4 is a front elevational view showing the relationship between the illumination range of the illumination optical system and the imaging range of the objective lens system in the above inspection apparatus. Fig. 5 is a view showing the relationship between the light intensity distribution in the illumination range and the imaging range of the objective lens system in the illumination optical system of the inspection apparatus. Fig. 6 is a view showing the photographic data obtained in the above inspection apparatus. Fig. 7 is a flow chart showing the procedure of the method of inspecting the gray scale mask carried out in the above inspection apparatus. Figs. 8 to 8C are cross-sectional views showing a manufacturing process (front half) of a TFT substrate using a gray scale mask. 9A to 9C are cross-sectional views showing a manufacturing process of a TFT substrate using a gray scale/mask, 2130-9291-PF; and a Chent 42 200848920 (second half). 々 No. 1. The picture shows a front view of the construction of a gray scale reticle. Fig. 11 is a view showing the state of the light portion in the above inspection apparatus. 〕 Photographing ~ Becco + through Figure 12 is a side view of the positional relationship of the shadow elements in the above inspection apparatus. 4 hood, objective lens, and photographing Fig. 13 is a view showing the transmittance of the semi-transmissive portion by numerically photographic data obtained in the above-described inspection apparatus. Binaryization FIGS. HA to 14C are views showing the difference in the transmittance of the width of the semi-transmissive portions sandwiched between the light-shielding portions by the above-described inspection apparatus. Teeth Fig. 15 is a view showing a state of a position of a defect of photographic data obtained by the above-described inspection apparatus. Fig. 16 is a view showing a state of a position of a defect of the photographic data obtained by the above inspection apparatus. The figure and the figure are diagrams showing the transfer state of the black defect position in the photograph obtained in the above inspection apparatus. /, Figs. 18A and 18B are views showing the transfer state of the white defect position in the photograph obtained in the above inspection apparatus. [Major component symbol description] 1 ~ light source; 2 ~ illumination optical system; 2-1 ~ aperture aperture mechanism; 2 - 2 ~ field of view aperture; 3 ~ mask; 4 ~ object lens system; 2130-9291-PF; Chentf 43 200848920

4-1〜開口光圈機構； 4b〜第二群（成像透鏡）； 6〜波長選擇過渡！§'， 1 2〜顯示部（顯示裝置）； 1 4〜控制部； 1 01〜遮光部； 1 03〜半透光部（灰階部）； 103B〜穿透部； 202〜閘極； 206〜源極汲極用金屬膜； 207〜正型光阻膜； 207B〜第二光阻圖案； 4a〜第一群（模擬透鏡）; 5〜攝影元件； 11〜演算部（演算裝置）; 13-1、13-2〜支持部； 100〜灰階光罩； 10 2〜透光部； 103A〜遮光圖案； 201〜玻璃基板； 2 0 3〜閘極絕緣膜； 206A、206B〜源極/汲極； 207A〜第一光阻圖案； 204〜第一半導體膜（a —以）； 205〜第二半導體膜（N+ a-Si); 3a〜光罩保持部（光罩保持裝置）； 15〜移動操作部（移動操作裝置）； 1 01B〜源極/汲極的遮光部。 2130-9291-PF;Chentf 444-1 ~ open aperture mechanism; 4b ~ second group (imaging lens); 6 ~ wavelength selection transition! §', 1 2~ display unit (display device); 1 4 to control unit; 1 01 to shading unit; 1 03 to semi-transmissive portion (gray-level portion); 103B to penetrating portion; 202 to gate; 206 ~ source bungee metal film; 207 ~ positive resist film; 207B ~ second resist pattern; 4a ~ first group (analog lens); 5 ~ photographic element; 11 ~ calculation unit (calculation device); -1, 13-2 to support portion; 100 to gray scale mask; 10 2 to light transmitting portion; 103A to light shielding pattern; 201 to glass substrate; 2 0 3 to gate insulating film; 206A, 206B to source/汲A; 207A to first photoresist pattern; 204 to first semiconductor film (a-to); 205 to second semiconductor film (N+ a-Si); 3a to mask holding portion (mask holding device); ~ Move operation unit (moving operation device); 1 01B to source/drain. 2130-9291-PF; Chentf 44

Claims (1)

200848920 • 十、申請專利範圍： 1· 一種灰階光罩的檢查方法，在透明基板上形成包含 遮光部、透光部以及使曝光光線的一部份穿透的半透光部 的圖案，藉由曝光裝置的曝光將上述圖案轉印至被轉印體 上，藉此用於製造顯示裝置之際的灰階光罩的檢查方法， 具有求出攝影影像資料的工程，從光源發出的既定波長的 光束經由照明光學系而照射至上述灰階光罩，穿透該灰階 光罩的光束經由對物鏡系，藉由攝影裝置而做攝影，其中 由上述攝影影像資料取得包含上述灰階光罩的半透光部的 穿透光線的強度分佈資料。 2. 如申請專利範圍第丨項所述之灰階光罩的檢查方 法，其中上述光源發出至少g線、h線或i線其中之一， 或者是以上任意二種以上混合的光束。 3. 如申明專利範圍第丨項所述之灰階光罩的檢查方 法，其中上述照明光學系的開口數及上述對物透鏡系的開 口數分別大略相等於上述曝光裝置中的照明光學系的開口 數以及對物透鏡系的開口數。 、4.如中請專利範圍第i項所述之灰階光罩的檢查方 法其更具有以下的工程：從上述攝影影像資料取得上述 灰階光罩的半透光部、透光部以及遮光部的區域的穿透光 線的強度分佈資料，並掌握上述半透光部的穿透光強度與 上述透光部或上述遮光部的穿透光強度的差及/或比例。 5. 士申。月專利範圍第！項所述之灰階光罩的檢查方 法’其中從上述攝影影像資料所得到的灰階光罩的上述穿 2130-9291-PF;Chentf 45 200848920 -透光的強度分佈資料，掌握既定的門檻值以上及/或既定門 捏值以下的區域的尺寸，而求出使用上述灰階光罩做曝光 日’所轉印的上述遮光部、上述透光部或上述半透光部所對 應的圖案的尺寸。 6·如申請專利範圍第丨項所述之灰階光罩的檢查方 法，其中從±述攝影影冑資料所得到的灰階光罩的上述穿 透光的強度分佈資料，掌握既定的門檻值以上及/或既定門 檻值以下的區域的有無及區域的尺寸，檢測出使用上述灰 階光罩而曝光時所轉印的缺陷的有無以及轉印的情況的尺 寸。 7. 如申請專利範圍帛j項所述之灰階光罩的檢查方 法，其中上述灰階光罩的半透光部具有鄰接於—或以上的 上述遮光部的區域，藉由獲得鄰接於上述半透光部的上述 遮光部的區域的穿透光線的強度分佈資料，求出在曝光裝 置中穿透該區域的曝光光線的光強度以及由該曝光光線所 轉印的圖案的形狀。 8. 如申請專利範圍帛1項所述之灰階光罩的檢查方 法，其中上述灰階光罩中的半透光部為具有在上述曝:裝 置的曝光條件下的解析界限以下的微細圖案的元件，藉由 調節上述對物透鏡系ϋ述攝景多裝置至少丨中之—的^軸 方向的位置’得到該微細圖案被散焦而成為非解析狀態的 攝影影像資料。 &quot; 、、9.如中請專利範項所述之灰階光罩的檢查方 法，其中上述灰階光罩為修正白缺陷或黑缺陷的元件。 2130-9291-PF;Chentf 46 200848920 ίο.如申請專利範圍第丨項 法，其中上述灰階光罩的W 之灰階光罩的檢查方 半透光膜形成。 、、邛位在上述透明基板上由 11.如申請專利範圍第1〇 法，其中上述灰階光罩為修正白缺白光罩的才欢查方 19 L ^ 勹I止白缺陷或黑缺陷的元件。 法，專利範圍帛11項所述之灰階光罩的檢查方 4缺陷或黑缺陷的修正係由形成與上述半透 先膜不同的組成的修正膜實施。 ” Λ Ρ6光罩的製造方法’具有申請專利範圍第1 、弟工頁其中之—所記載的灰階光罩的檢查方法。 、、14·—種圖案轉印方法，使Μ請專利範圍第13項所 述之灰Ρ白光罩的製造方法所製造的液晶裝置製造用灰階光 罩’由曝光裝置以既定波長的光線進行曝光，而將圖案轉 印至被轉印體。 &quot;15·-種圖案轉印方法，使用在透明基板上形成包含遮 光邛透光部以及穿透曝光光線的一部份的半透光部的圖 木的灰Ρ白光罩’藉由曝光裝置的曝光，將圖案轉印至被轉 印體上，其中預先從檢查裝置的光源所發出的既定波長的 光束經由照明光學系照射至上述灰階光罩，穿透該灰階光 罩的光束經由對物透鏡系而由攝影裝置做攝影，而取得複 數個照射條件中的攝影影像資料，根據由上述複數個照射 條件所得到的攝影影像，決定上述曝光裝置進行圖案轉印 時的曝光條件。 1.6· —種光罩的檢查方法，使用在透明基板上形成包含 2130-9291-PF;Chentf 47 200848920 微細圖案的遮光圖案，在既定的曝光條件下，對該光罩照 射曝光光線，在該曝光條件下，為了使該微細圖案成為非 解像’使用將與該遮光圖案不同的圖案形狀形成於被轉印 體上的圖案轉印方法，其中藉由預先近似上述曝光條件的 曝光條件或者疋尊握與上述曝光條件的相關的假定曝光條 件而對孩光罩做測試曝光，藉由該測試曝光，取得該光罩 的在該曝光條件下或該假定曝光條件下的穿透光的光強度 分佈資料。 17.種光罩的檢查方法，在透明基板上形成有透光 部、遮光部以及半透光冑，該半透光部&amp;在該透明基板上 所形成的穿透曝光光線的一部份的半透光膜，在該光罩的 檢查方法中，該半透光膜係由光穿透率具有波長依存性的 材料製成’#由預先近似上述曝光條件的冑丨條件或者是 掌握與上述曝光條件的相關的假定曝光條件而對該光罩做 測試曝光’藉由該測試曝光，取得該光罩的在該曝光條件 下或該假定曝光條件下的穿透光的光強度分佈資料。 18. 如申請專利範圍第16項所述的光罩的檢查方法， 其中上述測試曝光係由包含於上述曝光條件中的曝光光線 的-或二種以上的波長進行，藉由演算所得到的上述光強 度分佈資料’而近似上述曝光條件。 19. -種光罩的製造方法，包含申請專利範圍第“至 18項中任一項所§己載的光罩的檢查方法。 20. -種圖案轉印方法’㈣申請專利範圍第“至 項中任—項所述之上述測試曝先在不同的曝光條件下進行 2130-9291-PF;Chentf 48 200848920 ，而決定對該光 複數次所得到的複數個該光強度分佈資料 罩進行曝光的曝光條件。 2130-9291-PF;Chentf 49200848920 • X. Patent application scope: 1. A method for inspecting a gray-scale mask, forming a pattern of a semi-transmissive portion including a light-shielding portion, a light-transmitting portion, and a portion of the exposure light on the transparent substrate, The method of inspecting a gray scale mask for manufacturing a display device by exposing the pattern to an object to be transferred by exposure of an exposure device, and having a method of obtaining a photographed image data, a predetermined wavelength emitted from a light source The light beam is irradiated to the gray scale mask through the illumination optical system, and the light beam that penetrates the gray scale mask is photographed by the photographing device through the pair of objective lens systems, wherein the gray scale mask is obtained from the photographed image data. The intensity distribution of the transmitted light of the semi-transmissive portion. 2. The method of inspecting a gray scale reticle as described in the scope of the invention, wherein the light source emits at least one of a g-line, an h-line or an i-line, or a beam of any two or more of the above. 3. The method of inspecting a gray scale mask according to the invention, wherein the number of openings of the illumination optical system and the number of openings of the pair of objective lens systems are substantially equal to that of the illumination optical system in the exposure apparatus, respectively. The number of openings and the number of openings of the objective lens system. 4. The method for inspecting a gray scale mask according to item i of the patent scope further includes the following project: obtaining a semi-transmissive portion, a light transmitting portion, and a shading of the gray scale mask from the photographic image data. The intensity distribution data of the transmitted light in the region of the portion is used to grasp the difference and/or the ratio of the transmitted light intensity of the semi-transmissive portion to the transmitted light intensity of the light transmitting portion or the light blocking portion. 5. Shishen. Monthly patent range! The method for inspecting the gray scale mask described in the section, wherein the above-mentioned wearing of the gray scale mask obtained from the above-mentioned photographic image data is 2130-9291-PF; and the intensity distribution data of the light transmission of the Chentf 45 200848920, the predetermined threshold value is grasped. The size of the region below and/or the predetermined gate pinch value is determined, and the pattern corresponding to the light shielding portion, the light transmitting portion, or the semi-transmissive portion transferred by using the gray scale mask as the exposure day is determined. size. 6. The method for inspecting a gray scale reticle as described in the scope of the patent application, wherein the intensity distribution data of the transmitted light of the gray scale reticle obtained from the photographic image is subject to a predetermined threshold value. The presence or absence of the area below and/or the predetermined threshold value and the size of the area are used to detect the presence or absence of defects transferred during exposure using the gray scale mask and the size of the transfer. 7. The method of inspecting a gray scale mask according to the application of the invention, wherein the semi-transmissive portion of the gray scale mask has a region adjacent to the above or above the light shielding portion, by obtaining the adjacent The intensity distribution data of the light penetration in the region of the light-shielding portion of the semi-transmissive portion is used to determine the light intensity of the exposure light that penetrates the region in the exposure device and the shape of the pattern transferred by the exposure light. 8. The method for inspecting a gray scale mask according to claim 1, wherein the semi-transmissive portion of the gray scale mask is a fine pattern having an analytical limit below an exposure condition of the exposure apparatus; The element is obtained by adjusting the position of the objective lens system to at least the ^-axis direction of the at least one of the plurality of photographic devices. The fine pattern is defocused and becomes photographic image data in an unresolved state. &quot;, 9. The method for inspecting a gray scale mask as described in the patent specification, wherein the gray scale mask is an element for correcting white defects or black defects. 2130-9291-PF; Chentf 46 200848920 ίο. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; And the 邛 position on the transparent substrate is 11. The method according to the first method of the patent scope, wherein the gray-scale reticle is a modified white leuco mask to check the square 19 L ^ 勹I white defect or black defect element. The inspection method of the gray scale mask described in the Patent Publication No. 11 is corrected by a correction film having a composition different from that of the above-described semi-transmissive film. Λ 制造 6 光 光 光 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰 灰The gray scale mask for manufacturing a liquid crystal device manufactured by the method for producing an ash white mask according to the above-mentioned item 13 is exposed by light of a predetermined wavelength by an exposure device, and the pattern is transferred to the object to be transferred. a pattern transfer method using an ash white mask of a figure comprising a light-shielding transparent portion and a semi-transmissive portion penetrating a portion of the exposure light on the transparent substrate by exposure of an exposure device The pattern is transferred onto the object to be transferred, wherein a light beam of a predetermined wavelength emitted from a light source of the inspection device is irradiated to the gray scale mask through the illumination optical system, and a light beam that penetrates the gray scale mask passes through the objective lens system. And the photographing device performs photographing, and obtains photographed image data in a plurality of irradiation conditions, and determines exposure of the exposure device during pattern transfer based on the photographed image obtained by the plurality of irradiation conditions. Light condition 1.6. - A method for inspecting a mask, using a light-shielding pattern comprising a fine pattern of 2130-9291-PF; Chent 47 47489489 on a transparent substrate, and irradiating the mask with exposure light under a predetermined exposure condition, In the exposure condition, in order to make the fine pattern non-resolution, a pattern transfer method in which a pattern shape different from the light-shielding pattern is formed on the transfer target is used, wherein exposure conditions by approximating the above exposure conditions are used in advance Or the test exposure of the visor is performed by holding the assumed exposure conditions associated with the above exposure conditions, and by the test exposure, the illuminating light of the reticle under the exposure condition or the assumed exposure condition is obtained. Light intensity distribution data. 17. A method for inspecting a reticle, wherein a transparent portion, a light shielding portion, and a semi-transparent 胄 are formed on the transparent substrate, and the translucent portion &amp; a penetration exposure formed on the transparent substrate a semi-transmissive film of a portion of the light, in the method of inspecting the reticle, the semi-transmissive film is made of a material having a wavelength dependence of light transmittance. The 胄丨 condition of the above exposure condition or the test exposure of the reticle is grasped by the assumption of the exposure condition associated with the above exposure condition. By exposure of the test, the exposure condition of the reticle or the assumed exposure is obtained. The light intensity distribution data of the illuminating light according to the invention of claim 16, wherein the test exposure is performed by - or two of exposure light contained in the above exposure conditions The above-mentioned wavelength is performed, and the above-mentioned exposure conditions are approximated by calculating the above-mentioned light intensity distribution data'. 19. - A method of manufacturing a reticle, including any one of the claims "18" The method of inspection of the reticle. 20. - Pattern transfer method '(4) The scope of the patent application is as follows: "The above test is performed under the different exposure conditions 2130-9291-PF; Chent 48 200848920, and the light is decided Exposure conditions for exposure of a plurality of the light intensity distribution data masks obtained in plural times. 2130-9291-PF; Chentf 49
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