TWI703665B - 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 - Google Patents

具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 Download PDF

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Publication number
TWI703665B
TWI703665B TW106115538A TW106115538A TWI703665B TW I703665 B TWI703665 B TW I703665B TW 106115538 A TW106115538 A TW 106115538A TW 106115538 A TW106115538 A TW 106115538A TW I703665 B TWI703665 B TW I703665B
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TW
Taiwan
Prior art keywords
chamber
transfer
substrate
transfer chamber
coupled
Prior art date
Application number
TW106115538A
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English (en)
Chinese (zh)
Other versions
TW201801232A (zh
Inventor
建邦 勞
紹芳 諸
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201801232A publication Critical patent/TW201801232A/zh
Application granted granted Critical
Publication of TWI703665B publication Critical patent/TWI703665B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW106115538A 2016-06-03 2017-05-11 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 TWI703665B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US62/491,143 2017-04-27
US15/499,100 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (2)

Publication Number Publication Date
TW201801232A TW201801232A (zh) 2018-01-01
TWI703665B true TWI703665B (zh) 2020-09-01

Family

ID=61725115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106115538A TWI703665B (zh) 2016-06-03 2017-05-11 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺

Country Status (3)

Country Link
JP (1) JP7190905B2 (ja)
KR (1) KR102196746B1 (ja)
TW (1) TWI703665B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US20150040822A1 (en) * 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TW201529881A (zh) * 2014-01-05 2015-08-01 Applied Materials Inc 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
WO2015069428A1 (en) 2013-11-06 2015-05-14 Applied Materials, Inc. Particle generation suppressor by dc bias modulation
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US20150040822A1 (en) * 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TW201529881A (zh) * 2014-01-05 2015-08-01 Applied Materials Inc 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積

Also Published As

Publication number Publication date
JP2019517736A (ja) 2019-06-24
KR20190016537A (ko) 2019-02-18
JP7190905B2 (ja) 2022-12-16
KR102196746B1 (ko) 2020-12-30
TW201801232A (zh) 2018-01-01

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