TWI700826B - 影像感測器中之接墊之自對準及接地 - Google Patents

影像感測器中之接墊之自對準及接地 Download PDF

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TWI700826B
TWI700826B TW107140181A TW107140181A TWI700826B TW I700826 B TWI700826 B TW I700826B TW 107140181 A TW107140181 A TW 107140181A TW 107140181 A TW107140181 A TW 107140181A TW I700826 B TWI700826 B TW I700826B
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semiconductor material
metal
trench
contact pad
image sensor
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TW107140181A
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TW201933592A (zh
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勤 王
剛 陳
杜立 毛
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美商豪威科技股份有限公司
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  • Solid State Image Pick-Up Elements (AREA)

Abstract

本申請案係關於影像感測器中之接墊之自對準與接地。一種影像感測器包括：複數個光二極體，其安置於一半導體材料中，以將影像光轉換成影像電荷；以及一金屬柵格，其包括與該金屬柵格共面之一金屬屏蔽，安置成接近於該半導體材料之一後側。該金屬柵格與該複數個光二極體光學對準，以將該影像光引導至該複數個光二極體中，且一接觸接墊安置於該半導體材料中之一渠溝中。該接觸接墊耦接至該金屬屏蔽，來使該金屬屏蔽接地。

Description

影像感測器中之接墊之自對準及接地
本發明大體上係關於半導體製造，且特定言之而非排他性地，係關於CMOS影像感測器。
影像感測器已變得隨處可見。它們廣泛用於數位靜態相機、蜂巢式電話、安全性相機，以及醫學、汽車及其他應用。用來製造影像感測器之技術已經以大步調持續發展。舉例而言，對較高解析度及較低功耗的需求已促進此等裝置之進一步小型化及整合。
典型的影像感測器操作如下。來自外部場景之影像光入射於影像感測器上。影像感測器包括複數個光敏元件，使得每個光敏元件吸收入射影像光之一部分。包括在影像感測器中的諸如光二極體等光敏元件各自在吸收影像光之後產生影像電荷。所產生之影像電荷之量與影像光之強度成比例。所產生之影像電荷可用於產生表示外部場景之影像。
一般而言，影像感測器可包括多種電連接及觸點來為影像感測器供電，自影像感測器讀出影像資料，或控制影像感測器。形成此等觸點可為繁瑣的過程，且可花費許多額外製造步驟。
100:影像感測器
101:半導體材料
103:光二極體
105:金屬互連件
107:淺渠溝隔離結構
109:氧化物材料
111:氧化物
121:第一鋁層
123:第一TiN層
125:第二鋁層
127:第二TiN層
129:硬式光罩氧化物
131:SiON層
133:硬式光罩氧化物層/第二硬式光罩氧化物層
141:氧化物/氧化物層
143:氧化物/氧化物層
151:前側
153:後側
171:光致抗蝕劑層
181:控制電路及讀出電路
191:金屬柵格
193:金屬屏蔽
200:成像系統
205:像素陣列
211:讀出電路
215:功能邏輯
221:控制電路
C1~Cx:行
P1~Pn:像素
R1~Ry:列
參考以下圖式描述本發明之非限制性且非窮盡性的實例，其中除非另外指定，否則遍佈各圖的相同附圖標記指代相同的部分。
圖1A至圖1G說明根據本發明之教示的影像感測器製造方法。
圖2說明根據本發明之教示的可包括圖1A至圖1G之態樣之成像系統的一個實例的方塊圖。
對應附圖標記在圖式的若干視圖中始終指示對應組件。熟練的技術人員應瞭解，圖中之元件僅為簡單及清晰起見而進行說明，但不一定按比例繪製。舉例而言，圖中之一些元件之尺寸可能相對於其他元件誇示以有助於改良對本發明之各種實施例之理解。並且，通常未描繪在商業可行之實施例中有用或必需的常見但眾所周知的元件，以便促進本發明的此等各種實施例的遮擋較少的視圖。
本文中描述與影像感測器中之後側接墊的自對準及接地有關的設備及方法的實例。在以下描述中，陳述眾多具體細節來提供對具體實例的透徹理解。然而，熟習相關技術者將認識到；可在沒有該等具體細節中之一或多者的情況下或使用其他方法、組件、材料等來實踐本文所述之技術。在其他情況下，未圖示或詳細描述眾所周知的結構、材料或操作以免使某些態樣混淆。
在本說明書通篇中參考「一個實例」或「一個實施例」係指結合實例描述之特定特徵、結構或特性包括於本發明之至少一個實例中。因此，貫穿本說明書在不同位置中出現片語「在一個實例中」或「在 一個實施例中」未必都係指同一個實例。此外，在一或多個實例中，特定特徵、結構或特性可以任何合適方式組合。
本發明之實施例大體上係關於簡化為影像感測器形成金屬觸點所需的過程流。對於背側照明式(BSI)產品，當前製程需要許多光微影及蝕刻步驟來形成後側接地/接觸接墊、金屬柵格及金屬屏蔽。成本較高，且週期時間較長。此外，感測器之後側可能不接地，因為自金屬屏蔽至接觸接墊不存在連接。
根據本發明之教示之實例引入自對準蝕刻及化學機械拋光(CMP)步驟來以僅三個遮蔽步驟來實現類似的裝置架構(例如接地後側、金屬柵格、金屬屏蔽及鋁接觸接墊)。此外，可使用平坦表面來實施後側接地，這改良之後的微透鏡及彩色濾光片製程之結果。如圖1A至圖1G之論述中將示出，為實現此自對準接觸接墊，製程可利用因為接墊開口以及由鋁沈積塗覆之渠溝側壁造成的階梯高度差異。
圖1A至圖1G說明根據本發明之教示的影像感測器製造方法。具有本發明之權益的熟習此項技術者將理解，圖1A至圖1G可按任何次序且甚至並行地發生。此外，根據本發明之教示，可向方法加入圖式或自方法移除圖式。
圖1A示出提供包括安置於半導體材料101中且位於陣列中之複數個光二極體103之半導體材料101(例如矽)。氧化物111(例如氧化矽)安置於半導體材料101之後側153上。半導體材料101中亦包括控制電路及讀出電路181，其定位成接近於該陣列。在一個實例中，控制電路及讀出電路181安置於光二極體103陣列之一個、多個或所有側上。光二極體103安置成接近於半導體材料101之後側153，後側153與前側151相對。 氧化物材料109亦安置於半導體材料101之前側151上，且金屬互連件105安置於氧化物材料109上。
亦描繪安置成接近於前側151之淺渠溝隔離結構107。可藉由在半導體材料101之前側151中蝕刻渠溝，並用氧化物、經摻雜半導體等回填該渠溝來形成淺渠溝隔離結構107。在所描繪之實例中，金屬互連件105在側向方向上稍微大於淺渠溝隔離結構107。此外，在一個實例中，金屬互連件105僅安置成接近於淺渠溝隔離結構107中之一些但非全部(例如右側示出之第二淺渠溝隔離結構107)。
圖1B說明兩個分開的蝕刻步驟：蝕刻至半導體材料101中，自後側153穿過氧化物111至淺渠溝隔離結構107；以及蝕穿淺渠溝隔離結構107及氧化物材料109(例如SiO2、HfOx等)以接觸金屬互連件105。如所示出，可存在蝕穿氧化物材料109至金屬互連件105(例如銅)之一或多個觸點插塞孔。在一個實例中，在蝕刻較大的第二渠溝(右)之前，建立蝕刻至金屬互連件105的孔。然而，在其他實施例中，在蝕刻較大的第二渠溝之後蝕刻較小的孔。應瞭解，雖然此處僅描繪兩個孔，但根據本發明之教示，可存在任何數目之觸點插塞孔。
圖1C描繪將接觸接墊沈積在半導體材料中之渠溝(第一渠溝(左)及第二渠溝(右)兩者)中。這包括沈積第一鋁層121(例如厚度為2K埃)及第二鋁層125(例如厚度為25K埃)。安置於第一鋁層121與第二鋁層125之間的係第一TiN層123。安置於第二鋁層125上的係第二TiN層127。亦描繪沈積在鋁層121及125中之凹部中的硬式光罩氧化物129。鋁中之凹部形成於蝕刻至半導體材料101中之渠溝上方。因此，第二鋁層125安置於第一TiN層123與第二TiN層127之間，且第二TiN層127部分安置於硬式 光罩氧化物129下方。如圖所示，第一鋁層121(金屬層)自接觸接墊沿半導體材料101中之渠溝之側壁延伸至將成為金屬屏蔽的鋁之一部分。第一鋁層121自接觸接墊延續至第一鋁層121的將成為金屬屏蔽的部分。應瞭解，可在沈積之後執行化學機械拋光步驟，移除過多氧化物129，且曝露第二TiN層127(例如光二極體103上方)。
並且，一或多個觸點插塞(以沈積在第二渠溝中之鋁製成)延伸穿過半導體材料101及氧化物材料109，且一或多個觸點插塞接觸安置於氧化物材料109上之金屬互連件105。
圖1D示出圖1C中所沈積之裝置架構之蝕除部分。更特定言之，第二TiN層127之一部分及第二鋁層125之一部分被蝕除，留下硬式光罩氧化物129之若干部分。蝕刻在第一TiN層123上終止。
在所描繪之實例中，SiON層131及硬式光罩氧化物層133沈積在第二鋁層125之經蝕刻表面之上。如所說明，在(安置於渠溝上方的)第二TiN層127之表面上的係第一硬式光罩氧化物層129、SiON層131及第二硬式光罩層133。如所示出，SiON層131及第二硬式光罩層133跨半導體材料101之整個表面連續。
圖1E說明將光致抗蝕劑層171沈積在晶圓之表面上，以便蝕除層堆疊之若干部分，且界定金屬柵格(例如圖1F中之金屬柵格191)及金屬屏蔽(例如圖1F中之金屬屏蔽193)的特徵。在所描繪之實例中，已經移除光致抗蝕劑層171的若干部分來界定何處將發生蝕刻。在一些實例中，光致抗蝕劑層171可為負性抗蝕劑或正性抗蝕劑。此外，本文所描繪之蝕刻步驟中之任一者可為根據本發明之教示的乾式蝕刻或濕式蝕刻。
圖1F描繪蝕刻由光致抗蝕劑層171界定之部分，以形成金 屬柵格191及金屬屏蔽193。這包括蝕除硬式光罩氧化物133、SiON層131及第一TiN層123之至少一部分，以形成金屬柵格191。金屬柵格191及金屬屏蔽193包括SiON層131、第一TiN 123(安置於半導體材料101與SiON層131之間)及第一鋁層121(安置於TiN層123與半導體材料101之間)。如所示出，金屬屏蔽193與金屬柵格191大體上共面(例如兩者在裝置架構之同一平面內)。
在所描繪之實例中，蝕刻步驟移除第二接觸接墊(右)的若干部分，且留下側向安置於第二接觸接墊及半導體材料101之兩側之間的氣隙。應瞭解，第一接觸接墊(左)藉助於連續的第一鋁層121電耦接至金屬屏蔽193，該第一鋁層自接墊沿渠溝之側壁向上延伸至金屬屏蔽193。
圖1G示出沈積氧化層141及143(例如透明的氧化物，如SiO2)以填充在金屬柵格191中之間隙中。亦描繪殘餘氧化物141及143自SiON層131及第二TiN層127之CMP移除。接著，經由蝕刻將第二TiN層127自接觸接墊之頂部移除。這使鋁接觸接墊曝露。因此，圖1G描繪幾乎完整的影像感測器100。應瞭解，該等接觸接墊兩者包括安置於渠溝中之材料層。
在所說明實例中，複數個光二極體103側向安置於第一渠溝(左)與第二渠溝(右)之間。此外，金屬柵格191與光二極體103光學對準，使得光自金屬柵格191反射出來並進入光二極體103中，從而防止光學串擾。亦示出已經部分填充有氧化物143之第二接觸接墊之側面上的氣隙。
如所說明之控制電路及讀出電路181位於光二極體103之陣列的周邊上。金屬屏蔽193至少部分地安置於控制電路及讀出電路181上 方，使得金屬屏蔽193定位成防止影像光進入控制電路及讀出電路181。在一個實例中，控制電路控制複數個光二極體之操作，且讀出電路自複數個光二極體103讀出影像電荷。在一些實例中，金屬屏蔽193以電氣方式及/或實體上耦接至金屬柵格191。
在所描繪之實例中，彩色濾光片陣列及微透鏡層尚未形成，且自圖中省略，以免混淆本發明之某些態樣。然而，在後續步驟中，微透鏡層可安置於金屬柵格上方，使得微透鏡將光聚焦至金屬柵格中之間隙中，且聚焦至光二極體中。此外，彩色濾光片陣列可安置於微透鏡層與複數個光二極體103之間。彩色濾光片陣列可包括藍色、綠色、紅色、透明及/或紅外濾光片，且可以拜耳(Bayer)模式、EXR模式、X-Trans模式等配置。彩色濾光片陣列可由染色聚合物製成。類似地，可藉由使聚合物塊曝露，且接著熔化及回焊該等塊以形成微透鏡的特性拱頂類結構，將微透鏡形成於彩色濾光片陣列上。
圖2說明根據本發明之教示的可包括圖1A至圖1G之態樣之成像系統200的一個實例的方塊圖。成像系統200包括像素陣列205、控制電路221、讀出電路211及功能邏輯215。在一個實例中，像素陣列205係光二極體之二維(2D)陣列，或影像感測器像素(例如像素P1、P2、……、Pn)。如所說明，將光二極體配置成列(例如列R1至Ry)及行(例如行C1至Cx)，以獲取人、位置、物體等的影像資料，其可接著用以渲染該人、位置、物體等的2D影像。然而，光二極體不必配置成列及行，且可採取其他組態。
在一個實例中，在像素陣列205中之每一影像感測器光二極體/像素已獲取其影像資料或影像電荷之後，讀出電路211讀出該影像資 料，且接著傳送至功能邏輯215。在各種實例中，讀出電路211可包括放大電路、類比-數位(ADC)轉換電路或其他電路。功能邏輯215可簡單地儲存影像資料，或者甚至藉由應用後期影像效果(例如自動對焦、修剪、旋轉、移除紅眼、調整亮度、調整對比度或其他效果)來操縱影像資料。在一個實例中，讀出電路211可沿(所說明)讀出行線一次讀出一列影像資料，或可使用多種其他技術(未說明)來讀出影像資料，該等技術諸如串列讀出或同時完全並列讀出所有像素。
在一個實例中，控制電路221耦接至像素陣列205，以控制像素陣列205中之複數個光二極體之操作。舉例而言，控制電路221可產生用於控制影像獲取之快門信號。在所描繪之實例中，快門信號係用於在單個獲取窗期間，同時使得像素陣列205內之所有像素能夠同時捕獲其各別影像資料的全域快門信號。在另一實例中，影像獲取與諸如閃光等照明效果同步。
在一個實例中，成像系統200可包括在數位相機、手機、膝上型電腦、汽車等中。另外，成像系統200可耦接至硬體之其他件，諸如處理器(通用處理器或其他處理器)、記憶體元件、輸出(USB埠、無線發射器、HDMI埠等)、照明設備/閃光燈、電輸入(鍵盤、觸控式顯示器、軌跡接墊、滑鼠、麥克風等)及/或顯示器。硬體之其他件可將指令遞送至成像系統200，自成像系統200提取影像資料或操縱由成像系統200供應之影像資料。
對本發明之所說明之實例的以上描述(包括摘要中所描述之內容)無意為窮盡性的或將本發明限制於所揭示之精確形式。雖然本文中出於說明性目的描述本發明之具體實例，但在本發明之範疇內，各種修改 係可能的，如熟習相關技術者將認識到。
可鑒於以上詳細描述對本發明作出此等修改。所附申請專利範圍中使用之術語不應被解釋為將本發明限於本說明書中所揭示之具體實例。確切而言，本發明之範疇應完全由所附申請專利範圍判定，應根據請求項解釋的已確立的原則來解釋所附申請專利範圍。
100‧‧‧影像感測器
101‧‧‧半導體材料
103‧‧‧光二極體
105‧‧‧金屬互連件
107‧‧‧淺渠溝隔離結構
109‧‧‧氧化物材料
111‧‧‧氧化物
121‧‧‧第一鋁層
123‧‧‧第一TiN層
127‧‧‧第二TiN層
131‧‧‧SiON層
141‧‧‧氧化物/氧化物層
143‧‧‧氧化物/氧化物層
191‧‧‧金屬柵格
193‧‧‧金屬屏蔽

Claims (20)

  1. 一種影像感測器，其包含： 複數個光二極體，其安置於一半導體材料中，以將影像光轉換成影像電荷； 一金屬柵格，其包括與該金屬柵格共面之一金屬屏蔽，安置成接近於該半導體材料之一後側，其中該金屬柵格與該複數個光二極體光學對準，以將該影像光引導至該複數個光二極體中；以及 一接觸接墊，其安置於該半導體材料中之一渠溝中，且其中該接觸接墊耦接至該金屬屏蔽來使該金屬屏蔽接地。
  2. 如請求項1之影像感測器，其中一金屬層自該接觸接墊沿該半導體材料中之該渠溝之一側壁延伸至該金屬屏蔽，其中該金屬層自該接觸接墊延續至該金屬屏蔽。
  3. 如請求項1之影像感測器，其進一步包含至少部分地安置在該半導體材料中之控制電路及讀出電路，其中該控制電路控制該複數個光二極體之操作，且其中該讀出電路自該複數個光二極體讀出影像電荷。
  4. 如請求項3之影像感測器，其中該控制電路及該讀出電路至少部分安置在該金屬屏蔽下面，使得該金屬屏蔽定位成阻止影像光進入該控制電路及該讀出電路。
  5. 如請求項1之影像感測器，其進一步包含： 一第二渠溝，其安置於該半導體材料中；及 一第二接觸接墊，其安置於該第二渠溝中，其中該第二接觸接墊包括： 一或多個觸點插塞，其延伸穿過該半導體材料以及安置成接近於該半導體材料之一前側之一氧化物材料，該前側與該後側相對，其中該一或多個觸點插塞接觸安置於該氧化物材料上之一金屬互連件。
  6. 如請求項5之影像感測器，其中該複數個光二極體側向安置於該渠溝與該第二渠溝之間。
  7. 如請求項5之影像感測器，其中該一或多個觸點插塞包括鋁，且該金屬互連件包括銅。
  8. 如請求項1之影像感測器，其中該金屬柵格及該金屬屏蔽包括： 一SiON層； 一TiN層，其安置於該半導體材料與該SiON層之間；以及 一鋁層，其安置於該TiN層與該半導體材料之間。
  9. 如請求項8之影像感測器，其中該TiN層自該接觸接墊沿該半導體材料中之該渠溝之一側壁延伸至該金屬屏蔽，其中該TiN層自該接觸接墊延續至該金屬屏蔽。
  10. 如請求項9之影像感測器，其進一步包含安置於該渠溝及該第二渠溝中之淺渠溝隔離結構。
  11. 一種影像感測器製造方法，其包含： 提供一半導體材料，其包括： 複數個光二極體，其安置於該半導體材料中且定位於一陣列中；及 控制電路及讀出電路，其安置於該半導體材料中，且定位成接近於該陣列； 在該半導體材料中蝕刻一渠溝； 在該半導體材料中之該渠溝中沈積一接觸接墊； 形成一金屬柵格，其包括與該金屬柵格共面之一金屬屏蔽，安置成接近於該半導體材料之一後側，其中該金屬柵格與該複數個光二極體光學對準，以將影像光引導至該複數個光二極體中；以及 將該金屬屏蔽耦接至該接觸接墊。
  12. 如請求項11之方法，其中將該金屬屏蔽耦接至該接觸接墊包括：沈積一金屬層，該金屬層自該接觸接墊沿該半導體材料中之該渠溝之一側壁延伸至該金屬屏蔽，其中該金屬層自該接觸接墊延續至該金屬屏蔽。
  13. 如請求項12之方法，其中在該半導體材料之該渠溝中沈積一接觸接墊包括：在該渠溝中沈積鋁及TiN。
  14. 如請求項13之方法，其進一步包含：將SiON及一硬式光罩氧化物沈積在該鋁及該TiN上。
  15. 如請求項14之方法，其中形成該金屬柵格包括：將光致抗蝕劑沈積在該硬式光罩氧化物上，其中該光致抗蝕劑用以界定該金屬柵格及金屬屏蔽之特徵。
  16. 如請求項15之方法，其進一步包含蝕除該硬式光罩氧化物、該SiON及該TiN之至少一部分以形成該金屬柵格，其中該金屬柵格及該金屬屏蔽包括該SiON、安置於該半導體材料與該SiON之間的該TiN，以及安置於該TiN與該半導體材料之間的該鋁。
  17. 如請求項11之方法，其進一步包含： 蝕刻一第二渠溝至該半導體材料中；以及 沈積安置於該第二渠溝中之一第二接觸接墊，其中該第二接觸接墊包括： 一或多個觸點插塞，其延伸穿過該半導體材料以及安置成接近於該半導體材料之一前側之一氧化物材料，該前側與該後側相對，其中該一或多個觸點插塞接觸安置於該氧化物材料上之一金屬互連件。
  18. 如請求項17之方法，其中該複數個光二極體側向安置於該渠溝與該第二渠溝之間。
  19. 如請求項17之方法，其中該一或多個觸點插塞包括鋁，且該金屬互連件包括銅。
  20. 如請求項17之方法，其進一步包含蝕刻該第二接觸接墊之一部分，以形成該半導體材料與該第二接觸接墊之間的一氣隙。
TW107140181A 2017-11-29 2018-11-13 影像感測器中之接墊之自對準及接地 TWI700826B (zh)

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