TWI698932B - 二維半導體元件、光電單元與二維半導體元件的製造方法 - Google Patents

二維半導體元件、光電單元與二維半導體元件的製造方法 Download PDF

Info

Publication number
TWI698932B
TWI698932B TW108111228A TW108111228A TWI698932B TW I698932 B TWI698932 B TW I698932B TW 108111228 A TW108111228 A TW 108111228A TW 108111228 A TW108111228 A TW 108111228A TW I698932 B TWI698932 B TW I698932B
Authority
TW
Taiwan
Prior art keywords
dimensional semiconductor
layer
super acid
acid
semiconductor material
Prior art date
Application number
TW108111228A
Other languages
English (en)
Other versions
TW202036726A (zh
Inventor
陳奕彤
賴映佑
陳俊安
張鋅權
李奕賢
Original Assignee
國立清華大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立清華大學 filed Critical 國立清華大學
Priority to TW108111228A priority Critical patent/TWI698932B/zh
Priority to US16/597,716 priority patent/US11183568B2/en
Application granted granted Critical
Publication of TWI698932B publication Critical patent/TWI698932B/zh
Publication of TW202036726A publication Critical patent/TW202036726A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic Table 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本發明主要提出一種二維半導體元件，包括：一二維半導體材料層、一超強酸作用層與一超強酸溶液；其中，該二維半導體材料層係由具半導體特性的過渡金屬硫化物材料製成，且該超強酸作用層係形成於該二維半導體材料層之上。特別地，本發明之製造方法以氧化物材料製成所述超強酸作用層，並接著超強酸溶液應用於該超強酸作用層，令該超強酸溶液可以藉由擴散作用進入該超強酸作用層之中。並且，實驗結果係證實，利用擴散作用令超強酸溶液被包含於所述超強酸作用層之中，這樣不僅可以使用超強酸溶液對二維半導體材料層執行化學處理，同時超強酸溶液於該二維半導體材料層之上所實現的發光效率增強效果，其亦不會因為二維半導體材料層於進行後續製程步驟時接觸水與/或有機溶劑而消失。

Description

二維半導體元件、光電單元與二維半導體元件的製造方法
本發明係關於過渡金屬硫化物的技術領域，尤指由過渡金屬硫化物(Transition-metal dichalcogenides, TMDCs)製成的一種二維半導體元件及其應用。
二維過渡金屬硫化物具有分子式MX 2，其中M為元素週期表中的IVB-VIB族過渡金屬，且X為VIA族(chalcogen)之中的硫、硒、碲。單層的二維過渡金屬硫化物具有X-M-X的層狀結構，層內原子以共價鍵鍵結。並且，過渡金屬硫化物也可以利用凡德瓦力(van der Waals force)達成層間鍵結，形成多層的二維過渡金屬硫化物。值得特別說明的是，二硫化鉬(MoS 2)與二硒化鎢(WSe 2)因具有半導體與可被調控在0.8-2.0 eV的能帶隙(Direct optical band gap)之特性，是以能夠被應用於光伏元件、光檢測器、光纖雷射、發光二極體、或穿隧式電晶體之中，以提升其元件效能。
文獻一指出，二維過渡金屬硫化物的缺陷狀態(Defect state)是導致其光致發光(或稱螢光)量子效率(Photoluminescence quantum yield)的表現仍有待改善。在此，文獻一為：Kim et.al, “ Highly Stable Near-Unity Photoluminescence Yield in Monolayer MoS 2by Fluoropolymer Encapsulation and Superacid Treatment”, ACS Nano, 2017, 11 (5), pp. 5179-5185。並且，文獻一也同時指出以有機超強酸(Organic superacid )對二維過渡金屬硫化物進行化學處理可以有效地鈍化所述缺陷狀態，進而提升二維過渡金屬硫化物的螢光量子效率。值得特別說明的是，文獻一進一步地指出，若完成有機超強酸之化學處理的二維過渡金屬硫化物接著進行後續製程步驟，有機超強酸於該二維過渡金屬硫化物之上實現的增強螢光量子效率，可能會因為水或有機溶劑的影響而消失。
因此，文獻一提出一種二維過渡金屬硫化物的封裝材料，有助於改善前述問題。圖1即顯示包含有機超強酸與封裝材料的二維過渡金屬硫化物的示意性立體結構圖。如圖1所示，二維過渡金屬硫化物1’係形成於一基板2’之上，且該二維過渡金屬硫化物1’係包覆於一聚合物封裝層3’之中。該聚合物封裝層3’的材料為CYTOP，其為一種非晶含氟聚合物(amorphous fluoropolymers)。值得說明的是，實驗結果證實，利用有機超強酸對包覆有二維過渡金屬硫化物1’的聚合物封裝層3’進行化學處理之後，即使該二維過渡金屬硫化物1’後續被置於含有水或有機溶劑的環境之中，有機超強酸之化學處理於該二維過渡金屬硫化物1’之上實現的增強螢光量子效率，也不會因為水或有機溶劑的影響而消失。
由上述說明可知，利用聚合物封裝層3’包覆形成於基板2’之上的二維過渡金屬硫化物1’的確有助於保存所述化學處理於該二維過渡金屬硫化物1’之上實現的增強螢光量子效率。然而，吾人必須知道的是， 二維過渡金屬硫化物目前被應用在固態雷射、光檢測器、發光二極體、光伏元件、或高載子遷移率電晶體之中，這些電子元件都是利用半導體製程技術所製成。因此，在實務應用上必須同時考量該聚合物封裝層3’的高分子材料(例如: CYTOP)是否具備耐高溫或耐腐蝕之特性，以及所述聚合物封裝層3’的製程步驟是否可以與現有的半導體元件之製造流程相互整合。
熟悉固態雷射、光檢測器、發光二極體、光伏元件、與/或高載子遷移率電晶體等半導體元件之設計與製造的電子工程師應該知道，聚合物封裝層3’的製程步驟實難以整合於現有的半導體元件之製造流程之中。基於這樣的理由，如何開發出可以整合至現有半導體製程之中的包含有機超強酸作用層之二維過渡金屬硫化物於是成為本領域技術人員的重大課題。
本發明之主要目的在於提出一種二維半導體元件、包含該二維半導體元件的一種光電單元以及用以製得該二維半導體元件的一種製造方法。所述二維半導體元件係包括：一二維半導體材料層一超強酸作用層與一超強酸溶液；其中，該二維半導體材料層係由具半導體特性的過渡金屬硫化物材料製成，且該超強酸作用層係形成於該二維半導體材料層之上。特別地，本發明之製造方法以氧化物材料製成所述超強酸作用層，並接著超強酸溶液應用於該超強酸作用層，令該超強酸溶液可以藉由擴散作用進入該超強酸作用層之中。並且，實驗結果係證實，利用擴散作用令超強酸溶液被包含於所述超強酸作用層之中，這樣不僅可以使用超強酸溶液對二維半導體材料層執行化學處理，同時超強酸溶液於該二維半導體材料層之上所實現的發光效率增強效果，其亦不會因為二維半導體材料層於進行後續製程步驟時接觸水與/或有機溶劑而消失。
為了達成上述本發明之主要目的，本案發明人係提供所述二維半導體元件的一實施例，係包括：    一二維半導體材料層；    一超強酸作用層，係形成於該二維半導體材料層之上；以及    一超強酸溶液，係應用於該超強酸作用層之上，並透過擴散作用進入該超強酸作用層之中。
於前述本發明之二維半導體元件的一實施例中，其係包含於一有機發光二極體之中。
於前述本發明之二維半導體元件的一實施例中，其係應用於一發光二極體或一穿隧式電晶體之製作。
於前述本發明之二維半導體元件的一實施例中，其為一光吸收元件，應用於一太陽能電池、一光檢測器、或一Q-開關光纖雷射之中。
並且，為了達成上述本發明之主要目的，本案發明人同時提供所述光電單元的一實施例，係包括：    一底部分布式布拉格反射鏡；    一二維半導體元件，係設置於該底部分布式布拉格反射鏡之上，並包括：       一二維半導體材料層；       一超強酸作用層，係形成於該二維半導體材料層之上；及        一超強酸溶液，係應用於該超強酸作用層之上，並透過擴散作用進入該超強酸作用層之中；以及     一頂部分布式布拉格反射鏡，係置於該二維半導體元件之上。
於前述本發明之光電單元的一實施例中，其為一微共振腔(Micro cavity)，且所述微共振腔單元更包括一緩衝層，該緩衝層介於該底部分布式布拉格反射鏡與該二維半導體材料層之間，使得該緩衝層與該二維半導體元件的總厚度介於大於200nm，以滿足駐波條件。
於前述本發明之二維半導體元件與光電單元的實施例中，該二維半導體材料層的製造材料可為下列任一者：二硫化鉬(MoS 2)、二硫化鎢(WS 2)、二硒化鎢(WSe 2) 、二銻化鉬(MoTe 2)、二銻化鎢(WTe 2)、或二砷化鉬(MoSe 2)。
於前述本發明之二維半導體元件與光電單元的實施例中，該超強酸作用層為厚度範圍介於5nm至100nm之間的一氧化物或是一氮化物層，且該超強酸溶液包括一超強酸溶質與一溶劑。
於前述本發明之二維半導體元件與光電單元的實施例中，該該超強酸溶質可為下列任一者：雙(三氟甲磺醯基)亞胺、三氟甲磺酸、氟磺酸、氟銻酸、魔酸 、碳硼烷酸、上述任兩者之混合物、或上述任兩這以上之混合物；並且，該溶劑可為下列任一者：二氯甲烷、1,2-二氯乙烯、1,2-二氯乙烷、三氯甲烷、1,1,1-三氯乙烷、1,1,2-三氯乙烷、三氯乙烯、1,1,2,2-四氯乙烷、四氯乙烯、四氯化碳、鄰二氯苯(1,2-Dichlorobenzene)、或氯苯。
進一步地，本案發明人又提供所述包含二維半導體元件的製造方法的一實施例，係包括以下步驟：    (1)提供一二維半導體材料層；    (2)形成一超強酸作用層於該二維半導體材料層之上；以及    (3)應用一超強酸溶液至該超強酸作用層之上，使其透過擴散作用進入該超強酸作用層之中。
於前述本發明之二維半導體元件的製造方法的實施例中，其中，提供於該步驟(1)之中的該二維半導體材料層，其係預先形成於一基板之上，接著再自該基板之上被轉移至一目標物之上。
為了能夠更清楚地描述本發明所提出之一種二維半導體元件、包含該二維半導體元件的一種光電單元以及用以製得該二維半導體元件的一種製造方法，以下將配合圖式，詳盡說明本發明之較佳實施例。
二維半導體元件的基本結構
圖2顯示本發明之一種二維半導體元件的示意性立體結構圖。如圖2所示，本發明之二維半導體元件1包括：一二維半導體材料層11、一超強酸作用層12與一超強酸溶液13。該二維半導體材料層11的製造材料為具有分子式MX 2的二維過渡金屬硫化物(Transition-metal dichalcogenides, TMDCs)；其中，M為元素週期表中的過渡金屬，且X為VIA族之中的硫、硒、碲。單層的二維過渡金屬硫化物具有X-M-X的層狀結構，層內原子以共價鍵鍵結。進一步地，過渡金屬硫化物還可以利用凡德瓦力(van der Waals force)達成層間鍵結，形成多層的二維過渡金屬硫化物。值得特別說明的是，二硫化鉬(MoS 2)、二硫化鎢(WS 2)與二硒化鎢(WSe 2)因具有半導體與可被調控在0.8-2.0 eV的直接能帶隙(Direct optical band gap)之特性，是以此三種材料為所述二維半導體材料層11的較佳製造材料。除此之外，二銻化鉬(MoTe 2)、二銻化鎢(WTe 2)、或二砷化鉬(MoSe 2)也可以做為所述二維半導體材料層11的製造材料。
另一方面，超強酸作用層12係形成於該二維半導體材料層11之上，且其為厚度係介於5nm至100nm。並且，該超強酸溶液13係應用於該超強酸作用層12之上，並透過擴散作用進入該超強酸作用層12之中。此處所稱“應用”意旨不限定超強酸溶液13施用至該超強酸作用層12之上的方式。可以將所述超強酸溶液13透過塗佈(coating)、噴塗(spraying)、噴墨印刷(Inkjet printing)等方式直接施用於超強酸作用層12之上。另外，也可以將超強酸作用層12浸泡在所述超強酸溶液13之中，只要是能讓超強酸溶液13透過擴散作用進入該超強酸作用層12之中即可。
該超強酸作用層12為一氧化物層或是一氮化物層，例如：SiO 2、HfO 2、TiO 2、Al 2O 3、Si 3N 4。並且，該超強酸溶液13則包括一超強酸溶質與一溶劑。其中，該超強酸溶質可為雙(三氟甲磺醯基)亞胺、三氟甲磺酸、氟磺酸、氟銻酸、魔酸 、碳硼烷酸、上述任兩者之混合物、或上述任兩這以上之混合物，且該溶劑可為下列任一者：二氯甲烷、1,2-二氯乙烯、1,2-二氯乙烷、三氯甲烷、1,1,1-三氯乙烷、1,1,2-三氯乙烷、三氯乙烯、1,1,2,2-四氯乙烷、四氯乙烯、四氯化碳、鄰二氯苯(1,2-Dichlorobenzene)、或氯苯。
二維半導體元件的製造方法
圖3顯示本發明之一種二維半導體元件的製造方法的流程圖，且圖4顯示本發明之二維半導體元件的製程示意圖。如圖3與圖4所示，欲獲得本發明之二維半導體元件1，於製造方法上必須先執行步驟S1: 提供一二維半導體材料層11。此處所稱“提供”二維半導體材料層11是指將二維半導體材料層11形成於一基板之上，然後再將成形的二維半導體材料層11自該基板之上轉移至一目標物之上。當然，若製程上允許，也可以直接將二維半導體材料層11成形於該目標物之上。常見的用以支撐二維半導體材料層11的基板為矽基板或二氧化矽基板，然而本發明並不限定所述基板的種類，其可以是任何常用的硬質基板或軟質基板。硬質基板例如是:砷化鎵基板、藍寶石基板、氮化鋁基板、尖晶石基板、玻璃基板等，而軟質基板則可以是PET基板、PC基板、PI基板、PE基板等常見的聚合物基板。
接著，製造方法係接著執行步驟S2：形成一超強酸作用層12於該二維半導體材料層11之上。於圖4的(a)圖中，係利用原子層沉積(Atomic layer deposition, ALD)技術將二氧化矽(SiO 2)沉積於該二維半導體材料層11之上以作為所述超強酸作用層12。最終，製造方法係執行步驟S3：形成應用一超強酸溶液13至該超強酸作用層12之上，使其透過擴散作用進入該超強酸作用層12之中。於圖4的(b)圖中，超強酸:雙(三氟甲磺醯基)亞胺(Bis(trifluoromethane)sulfonamide, TFSI)被應用至超強酸作用層12的表面，且其係進一步地透過擴散作用進入所述超強酸作用層12內部(如圖4的(c)圖所示)。
實驗例
為了證實所述超強酸作用層12有助於將超強酸之化學處理於二維半導體材料層11之上實現的增強螢光效率予以保持住，本案發明人完成了相關實驗。請參閱下表(1)，實驗組別包含控制組1、實驗組1、控制組2、與實驗組2。  表(1)
組別 實驗樣品
控制組1   以TFSI處理其表面的二維半導體材料層11；其中，TFSI的溶劑為CH 2Cl 2。
實驗組1  如圖2所示，由二維半導體材料層11、超強酸作用層12與超強酸溶液13組成的二維半導體元件1；其中，TFSI的溶劑為CH 2Cl 2。
控制組2   以TFSI處理其表面的二維半導體材料層11；其中，TFSI的溶劑為CHCl 3。
實驗組2  如圖2所示，由二維半導體材料層11、超強酸作用層12與超強酸溶液13組成的二維半導體元件1；其中，TFSI的溶劑為CHCl 3。
圖5與圖6顯示實驗數據的統計長條圖。於圖5與圖6之中，Count number指的是樣本數，而enhancement factor指的是發光效率增加的倍數(亦即，發光增益)。由圖5的實驗數據可以輕易地發現，相較於直接以TFSI處理其表面的二維半導體材料層11，本發明之二維半導體元件1的發光增益係顯著提升。同時，圖6的實驗數據亦證實，相較於直接以TFSI處理其表面的二維半導體材料層11，本發明之二維半導體元件1的發光增益係顯著提升。
二維半導體元件的應用
實驗結果已經證實，利用擴散作用令超強酸溶液13被包含於所述超強酸作用層12之中，不僅可以使用超強酸溶液13對二維半導體材料層11執行化學處理(Chemical treatment)，同時超強酸溶液13於該二維半導體材料層11之上實現的發光效率增強效果，也不會因為二維半導體材料層11於進行後續製程步驟時接觸水與/或有機溶劑而消失。並且，前述說明也已經特別指出，成形的二維半導體材料層11會基於不同的應用而被轉移至一目標物之上。換句話說，前述的步驟S2與步驟S3亦可以在包含二維半導體材料層11的該目標物之上實現。圖7A與圖7B即顯示包含本發明之二維半導體元件的一光電單元的製程示意圖。如圖7A的(a)圖中，成形的一緩衝層BF被形成於至一底部分布式布拉格反射鏡21之上，且該底部分布式布拉格反射鏡21係由一基板20所支撐。如圖7A的(b)圖與(c)圖以及圖7B的(d)圖所示，利用前述步驟S1、步驟S2與步驟S3可將本發明所提供的二維半導體材料層11形成於該緩衝層BF之上。最終，圖7B的(e)圖顯示一頂部分布式布拉格反射鏡22被接著置於由二維半導體材料層11、超強酸作用層12與超強酸溶液13組成的本發明之二維半導體元件1之上。熟悉光電元件製作與設計的工程師應該可以發現，圖7所示的光電單元2是一個微共振腔(Micro cavity)。
圖7A與圖7B顯示本發明之二維半導體元件1可以包含於一微共振腔之中，並且，於所述微共振腔單元之中，該緩衝層BF與該二維半導體元件1的總厚度介於大於200nm，以滿足駐波條件。再者，必須加以強調的是，所述微共振腔只是本發明之二維半導體元件1於光電元件/單元的一個示範性的應用例，並非用以限制本發明之二維半導體元件1的應用。舉例而言，此二維半導體元件1可以整合入現有的有機發光二極體的結構之中，以提升有機發光二極體的發光效率。另一方面，此二維半導體元件1也可以應用於一發光二極體或一穿隧式電晶體(Tunnel field-effect transistor, TFET)之製作。特別說明的是，當二維半導體元件1應用於所述穿隧式電晶體的製作時，該超強酸作用層12(亦即，氧化物層)可以直接作為TFET的閘極絕緣層。再者，此二維半導體元件1還可以作為一光吸收元件，進而被應用於一太陽能電池、一光檢測器、或一Q-開關光纖雷射之中。
上述說明係已完整、清楚說明本發明之二維半導體元件及其製造方法以及具有該二維半導體元件光電元件/單元。然而，必須加以強調的是，上述之詳細說明係針對本發明可行實施例之具體說明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離本發明技藝精神所為之等效實施或變更，均應包含於本案之專利範圍中。
＜本發明＞
1:二維半導體元件
11:二維半導體材料層
12:超強酸作用層
13:超強酸溶液
S1-S3:方法步驟
2:光電單元
20:基板
21:底部分布式布拉格反射鏡
22:頂部分布式布拉格反射鏡
＜習知＞
1’:二維過渡金屬硫化物
2’:基板
3’:聚合物封裝層
圖1顯示顯示包含有機超強酸與封裝材料的二維過渡金屬硫化物的示意性立體結構圖；  圖2顯示本發明之一種二維半導體元件的示意性立體結構圖；  圖3顯示本發明之一種二維半導體元件的製造方法的流程圖；  圖4顯示本發明之二維半導體元件的製程示意圖；  圖5顯示實驗數據的統計長條圖；  圖6顯示實驗數據的統計長條圖；以及  圖7A與圖7B顯示包含本發明之二維半導體元件的一光電單元的製程示意圖。
1:二維半導體元件
11:二維半導體材料層
12:超強酸作用層
13:超強酸溶液

Claims (15)

  1. 一種二維半導體元件，包括：一二維半導體材料層；一超強酸作用層，係形成於該二維半導體材料層之上，且為一氧化物或一氮化物層；以及一超強酸溶液，包括一超強酸溶質與一溶劑，且其係應用於該超強酸作用層之上，並透過擴散作用進入該超強酸作用層之中；其中，該超強酸溶質可為下列任一者：雙(三氟甲磺醯基)亞胺、三氟甲磺酸、氟磺酸、氟銻酸、魔酸、碳硼烷酸、上述任兩者之混合物、或上述任兩者以上之混合物，且該溶劑可為下列任一者：二氯甲烷、1,2-二氯乙烯、1,2-二氯乙烷、三氯甲烷、1,1,1-三氯乙烷、1,1,2-三氯乙烷、三氯乙烯、1,1,2,2-四氯乙烷、四氯乙烯、四氯化碳、鄰二氯苯(1,2-Dichlorobenzene)、或氯苯。
  2. 如申請專利範圍第1項所述之二維半導體元件，其係包含於一有機發光二極體之中。
  3. 如申請專利範圍第1項所述之二維半導體元件，其係應用於一發光二極體或一穿隧式電晶體之製作。
  4. 如申請專利範圍第1項所述之二維半導體元件，其為一光吸收元件，應用於一太陽能電池、一光檢測器、或一Q-開關光纖雷射之中。
  5. 如申請專利範圍第1項所述之二維半導體元件，更包括一基板，用以供該二維半導體材料層形成於其上。
  6. 如申請專利範圍第1項所述之二維半導體元件，其中，該二維半導體材料層的製造材料可為下列任一者：二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鎢(WSe2)、二銻化鉬(MoTe2)、二銻化鎢(WTe2)、或二砷化鉬(MoSe2)。
  7. 如申請專利範圍第1項所述之二維半導體元件，其中，該超強酸作用層具有範圍介於5nm至100nm之間的厚度
  8. 如申請專利範圍第5項所述之二維半導體元件，其中，該基板可為一硬質基板或一軟質基板。
  9. 一種光電單元，包括：一底部分布式布拉格反射鏡；一二維半導體元件，係設置於該底部分布式布拉格反射鏡之上，並包括：一二維半導體材料層； 一超強酸作用層，係形成於該二維半導體材料層之上，且為一氧化物或一氮化物層；及一超強酸溶液，包括一超強酸溶質與一溶劑，且其係應用於該超強酸作用層之上，並透過擴散作用進入該超強酸作用層之中；其中，該超強酸溶質可為下列任一者：雙(三氟甲磺醯基)亞胺、三氟甲磺酸、氟磺酸、氟銻酸、魔酸、碳硼烷酸、上述任兩者之混合物、或上述任兩者以上之混合物，且該溶劑可為下列任一者：二氯甲烷、1,2-二氯乙烯、1,2-二氯乙烷、三氯甲烷、1,1,1-三氯乙烷、1,1,2-三氯乙烷、三氯乙烯、1,1,2,2-四氯乙烷、四氯乙烯、四氯化碳、鄰二氯苯(1,2-Dichlorobenzene)、或氯苯；以及一頂部分布式布拉格反射鏡，係置於該二維半導體元件之上。
  10. 如申請專利範圍第9項所述之光電單元，其為一微共振腔單元，且所述微共振腔單元更包括一緩衝層，該緩衝層介於該底部分布式布拉格反射鏡與該二維半導體材料層之間，使得該緩衝層與該二維半導體元件的總厚度介於大於200nm。
  11. 如申請專利範圍第9項所述之光電單元，其中，該二維半導體材料層的製造材料可為下列任一者：二硫化鉬(MoS2)、二硫化鎢(WS2)、二硒化鎢(WSe2)、二銻化鉬(MoTe2)、二銻化鎢(WTe2)、或二砷化鉬(MoSe2)。
  12. 如申請專利範圍第9項所述之光電單元，其中，該超強酸作用層具有範圍介於5nm至100nm的的厚度。
  13. 一種二維半導體元件的製造方法，包括以下步驟：(1)提供一二維半導體材料層；(2)形成一超強酸作用層於該二維半導體材料層之上，其中所述超強酸作用層為一氧化物或一氮化物層；以及(3)應用包含一超強酸溶質與一溶劑的一超強酸溶液至該超強酸作用層之上，使其透過擴散作用進入該超強酸作用層之中；其中，該超強酸溶質可為下列任一者：雙(三氟甲磺醯基)亞胺、三氟甲磺酸、氟磺酸、氟銻酸、魔酸、碳硼烷酸、上述任兩者之混合物、或上述任兩者以上之混合物，且該溶劑可為下列任一者：二氯甲烷、1,2-二氯乙烯、1,2-二氯乙烷、三氯甲烷、1,1,1-三氯乙烷、1,1,2-三氯乙烷、三氯乙烯、1,1,2,2-四氯乙烷、四氯乙烯、四氯化碳、鄰二氯苯(1,2-Dichlorobenzene)、或氯苯。
  14. 如申請專利範圍第13項所述之二維半導體元件的製造方法，其中，提供於該步驟(1)之中的該二維半導體材料層，其係預先形成於一基板之上，接著再自該基板之上被轉移至一目標物之上。
  15. 如申請專利範圍第13項所述之二維半導體元件的製造方法，其中，該二維半導體材料層的製造材料可為下列任一者：二硫化 鉬(MoS2)、二硫化鎢(WS2)、二硒化鎢(WSe2)、二銻化鉬(MoTe2)、二銻化鎢(WTe2)、或二砷化鉬(MoSe2)。
TW108111228A 2019-03-29 2019-03-29 二維半導體元件、光電單元與二維半導體元件的製造方法 TWI698932B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW108111228A TWI698932B (zh) 2019-03-29 2019-03-29 二維半導體元件、光電單元與二維半導體元件的製造方法
US16/597,716 US11183568B2 (en) 2019-03-29 2019-10-09 Two-dimensional semiconductor device, optoelectronic unit and method for making the two-dimensional semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108111228A TWI698932B (zh) 2019-03-29 2019-03-29 二維半導體元件、光電單元與二維半導體元件的製造方法

Publications (2)

Publication Number Publication Date
TWI698932B true TWI698932B (zh) 2020-07-11
TW202036726A TW202036726A (zh) 2020-10-01

Family

ID=72602093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108111228A TWI698932B (zh) 2019-03-29 2019-03-29 二維半導體元件、光電單元與二維半導體元件的製造方法

Country Status (2)

Country Link
US (1) US11183568B2 (zh)
TW (1) TWI698932B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112779518B (zh) * 2020-12-17 2022-07-22 东北师范大学 一种高发光强度的薄膜、制备方法及其用途

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160013277A1 (en) * 2014-07-09 2016-01-14 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure with template for transition metal dichalcogenides channel material growth
WO2017121608A1 (en) * 2016-01-12 2017-07-20 Jozef Stefan Institute Electro-optical modulator based on a layered semiconductor crystal structure
TW201826326A (zh) * 2016-08-31 2018-07-16 美商美光科技公司 用於形成包含二維材料結構之半導體元件結構之方法、以及相關的半導體元件結構及電子系統
TW201835970A (zh) * 2017-03-17 2018-10-01 台灣積體電路製造股份有限公司 具有二維側邊異質結構之半導體裝置的製造方法
TW201911372A (zh) * 2017-08-01 2019-03-16 倍疆科技股份有限公司 在二維層狀半導體以及功能層之間形成高潔淨接面的方法及系統

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
DE10144826B4 (de) * 2001-09-12 2007-03-08 Forschungsverbund Berlin E.V. Verfahren zur Herstellung von oberflächenemittierenden Halbleiter-Bauelementen und oberflächenemittierendes Halbleiter-Bauelement
US10122153B2 (en) * 2016-08-29 2018-11-06 International Business Machines Corporation Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160013277A1 (en) * 2014-07-09 2016-01-14 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structure with template for transition metal dichalcogenides channel material growth
WO2017121608A1 (en) * 2016-01-12 2017-07-20 Jozef Stefan Institute Electro-optical modulator based on a layered semiconductor crystal structure
TW201826326A (zh) * 2016-08-31 2018-07-16 美商美光科技公司 用於形成包含二維材料結構之半導體元件結構之方法、以及相關的半導體元件結構及電子系統
TW201835970A (zh) * 2017-03-17 2018-10-01 台灣積體電路製造股份有限公司 具有二維側邊異質結構之半導體裝置的製造方法
TW201911372A (zh) * 2017-08-01 2019-03-16 倍疆科技股份有限公司 在二維層狀半導體以及功能層之間形成高潔淨接面的方法及系統

Also Published As

Publication number Publication date
TW202036726A (zh) 2020-10-01
US11183568B2 (en) 2021-11-23
US20200312965A1 (en) 2020-10-01

Similar Documents

Publication Publication Date Title
Liu et al. Room‐temperature solution‐synthesized p‐type copper (I) iodide semiconductors for transparent thin‐film transistors and complementary electronics
Vélez et al. Gate-tunable diode and photovoltaic effect in an organic–2D layered material p–n junction
KR102325523B1 (ko) 금속 칼코게나이드 소자 및 그 제조 방법
US20180254421A1 (en) All quantum dot based optoelectronic device
RU2007139437A (ru) Солнечный элемент, способ его изготовления и способ изготовления полупроводникового устройства
TW200941788A (en) Method for manufacturing electronic components and electronic components
JP2007150156A (ja) トランジスタおよびその製造方法
US20060197436A1 (en) ZnO nanotip electrode electroluminescence device on silicon substrate
US9401478B2 (en) Method for manufacturing transistor and transistor
KR101878742B1 (ko) 그래핀층 상에 ＧａＮ 층을 성장시키는 방법 및 상기 그래핀층 상의 ＧａＮ을 이용한 발광소자
TWI698932B (zh) 二維半導體元件、光電單元與二維半導體元件的製造方法
Li et al. Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches
Shabani et al. Deep‐Red‐Emitting Colloidal Quantum Well Light‐Emitting Diodes Enabled through a Complex Design of Core/Crown/Double Shell Heterostructure
Guo et al. Few‐layer organic crystalline van der waals heterojunctions for ultrafast UV phototransistors
JP6525554B2 (ja) 基板構造体を含むｃｍｏｓ素子
Ahmed et al. Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides
US9023166B2 (en) Method of transferring graphene
Yang et al. Improved performances of CVD‐grown MoS2 based phototransistors enabled by encapsulation
Desai et al. Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics
CN111769201B (zh) 二维半导体组件、光电单元与二维半导体组件的制造方法
TWI460885B (zh) 具有空氣介質層之半導體光電元件及空氣介質層之製作方法
US11201049B2 (en) Thiourea organic compound for gallium arsenide based optoelectronics surface passivation
KR100873187B1 (ko) 발광 다이오드의 제조 방법
CN113481007A (zh) 一种基于双l型超表面结构增强二硫化钼荧光的方法
KR101379833B1 (ko) 플렉시블 디스플레이 소자용 패시베이션 구조