TWI697583B - Semiconductor processing device with cleaning function and cleaning method of semiconductor processing device using the same - Google Patents

Abstract

The present invention relates to a semiconductor process equipment with a cleaning function and a cleaning method thereof. The cleaning method includes: a chamber for providing a substrate processing space inside; a first exhaust part for discharging process gas from the inside of the chamber; and a first gas supply part for An inert gas is supplied to the inside of the chamber; a second gas supply part supplies clean gas to the inside of the chamber to generate flue gas inside the chamber; and a second exhaust part discharges from the inside of the chamber The inert gas, the cleaning gas, the flue gas or the mixed gas, the mixed gas is mixed with the inert gas, the cleaning gas and the flue gas.

Description

Semiconductor manufacturing process equipment with cleaning function and cleaning method thereof

The invention relates to a semiconductor processing equipment with a cleaning function and a cleaning method for the semiconductor processing equipment using the cleaning function.

The semiconductor process equipment is a device that places a substrate on a chuck and processes the substrate through a semiconductor process.

For example, an apparatus for processing a substrate through a semiconductor process can inject process gas into the chamber to perform more than one of plasma evaporation and etching. Generally, in order to etch the thin film formed on the substrate, a chlorine (Cl)-based gas is used as a process gas.

When this chlorine-based gas is used as a process gas and the etching process is repeated, reaction by-products are generated inside the chamber. The generated reaction by-products are deposited inside the chamber and act as a pollution source on the substrate in the subsequent process. Therefore, a periodic cleaning process for the inside of the chamber is required to remove them.

Generally, the chamber cleaning process is accompanied by a process of opening the chamber cover to remove the residual by-products remaining on the chamber wall and components. During this process, when the chamber cover is opened, Fume is generated.

The flue gas may be, for example, hydrogen chloride (HCl) generated by a rapid reaction between chlorine remaining in the interior of the chamber and atmospheric gas flowing into the interior of the chamber when the chamber cover is opened.

Since the smoke is a component harmful to the human body, the operator opens the chamber cover after wearing a gas mask or the like, and then removes the reaction by-products deposited on the inside of the chamber. However, the problem with this cleaning process is that workers may inhale harmful substances.

As another method of cleaning the chamber, the cover of the chamber is not opened, the cleaning gas that reacts with chlorine is supplied to the inside of the chamber to generate flue gas, and the smoke is discharged through a pump connected to the chamber. After that, the operator opens the chamber cover to remove the reaction byproducts deposited on the inside of the chamber and on the components. However, the problem with this method is that the flue gas is fixed in the form of powder in the pumping pipe connecting the chamber and the pump having a relatively lower temperature than the temperature inside the chamber, thereby reducing the performance of the semiconductor processing equipment. In addition, there is a problem that when a pump is used, since the discharge rate of chlorine is faster than the generation rate of hydrogen chloride, the chlorine is directly sucked into the pump, causing corrosion to the components of the pump, and the semiconductor processing equipment malfunctions.

Known technical literature

Patent literature

Patent Document 1 Korean granted patent 10-0266681 (June 27, 2000)

Patent Document 2 Korean granted patent 10-1078536 (October 25, 2011)

Patent Document 3 Korean granted patent 10-1720620 (March 22, 2017)

The purpose of the present invention is to provide a semiconductor process equipment with a cleaning function and a method for cleaning the semiconductor process equipment using the cleaning function.

In the semiconductor processing equipment with cleaning function of the present invention, the semiconductor processing equipment with cleaning function includes: a chamber, which provides a substrate processing space inside; and a first exhaust part, which discharges process gas from the inside of the chamber; The first gas supply part supplies inert gas to the inside of the chamber; the second gas supply part supplies clean gas to the inside of the chamber to generate flue gas inside the chamber; and, the second exhaust part, The inert gas, the cleaning gas, the flue gas or the mixed gas are discharged from the inside of the chamber, and the mixed gas is mixed with the inert gas, the cleaning gas and the flue gas.

Wherein, the second exhaust part includes: an exhaust valve connected to the chamber and opening and closing the discharge of the inert gas, the clean gas, the flue gas or the mixed gas; and a suction fan, Adjust the discharge amount of the inert gas, the clean gas, the flue gas or the mixed gas.

Wherein, the semiconductor processing equipment further includes a control unit, the control unit controls the suction fan, and the control unit controls the rotation speed of the suction fan.

Wherein, the semiconductor processing equipment further includes a detection device, the detection device is provided in the second exhaust portion, and detects the residual amount of the flue gas, the detection device detects the residual amount of the flue gas A value is input to the control unit, and the input value is compared with a reference setting value to adjust the rotation speed of the suction fan.

Wherein, the semiconductor process equipment further includes a control unit that controls the first exhaust unit, the first air supply unit, the second air supply unit, and the second exhaust unit More than one, the control unit respectively controls one or more of the first exhaust unit, the first air supply unit, the second air supply unit, and the second exhaust unit, or controls the First Two or more of an exhaust section, the first air supply section, the second air supply section, and the second exhaust section.

Wherein, the semiconductor manufacturing equipment further includes a detection device, which is arranged at the second exhaust part and detects the residual amount of the smoke.

Wherein, the semiconductor process equipment further includes a control unit that receives the value of the detected residual amount of the flue gas from the detection device, and inputs the detected value from the detection device to the control unit For the value of the remaining amount, the control unit controls the driving of the second air supply unit and the second exhaust unit based on the input value.

Wherein, the semiconductor manufacturing equipment further includes a heating device, which is arranged at the side of the second air supply part or the second exhaust part and heats the flue gas.

In the cleaning method of semiconductor process equipment of the present invention, the semiconductor process equipment including the first exhaust part, the first air supply part, the second air supply part and the second exhaust part connected to the chamber is used to remove the The flue gas inside the chamber, wherein the cleaning method includes the following steps: supplying inert gas from the first gas supply part to the inside of the chamber until the inside of the chamber reaches a reference set pressure; After the pressure inside the chamber reaches the reference set pressure, the supply of the inert gas from the first air supply part is interrupted; the second exhaust part is activated to form an air flow inside the chamber to Causing the inert gas inside the chamber to be discharged to the outside of the chamber; and supplying clean gas from the second gas supply part to the inside of the chamber.

Wherein, in the step of supplying the cleaning gas, the cleaning gas replaces the inert gas and keeps the pressure inside the chamber lower than the pressure outside the chamber, thereby from the second gas supply part to the The cleaning gas continuously flows into the interior of the chamber.

First, the smoke is removed before the operator performs the operation of opening the cover of the chamber, so as to solve the problem that the operator may inhale harmful substances during the cleaning process.

In addition, the second exhaust part that discharges the flue gas is physically separated from the first exhaust part, so as to solve the problem that the flue gas is fixed on the pumping pipe in the form of powder. As a result, the problem of reduced performance or frequent failures of semiconductor manufacturing equipment can be solved. In addition, it can solve the problem of corrosion of pump components and failure of semiconductor processing equipment.

In addition, the suction fan has the effect of being able to adjust the amount of smoke generated and discharged.

In addition, the control unit has the effect of being able to adjust the amount of smoke generated and discharged.

In addition, the detection device and the control unit have the effect of being able to adjust the amount of smoke generated according to the situation.

In addition, the control unit has the effect of being able to adjust the amount of smoke generated and discharged.

In addition, the detection device has the effect of being able to objectively determine whether the smoke is sufficiently removed.

In addition, when the temperature of the flue gas is increased, it has the effect of preventing the flue gas from being fixed in the inside of the chamber in the form of powder.

In addition, a gas flow that discharges inert gas to the second exhaust part is formed, and clean gas is supplied to the inside of the chamber, thereby preventing the flue gas from leaking to the outside of the chamber through the second exhaust part and preventing the surrounding environment outside the chamber from being polluted .

In addition, by adjusting the pressure of the second exhaust part and the inside of the chamber, the cleaning gas has the effect of continuously flowing into the inside of the chamber.

100: Semiconductor process equipment

10: Chamber

20: First exhaust part

30: The first air supply part

40: The second air supply part

50: The second exhaust part

51: exhaust valve

52: Suction fan

53: detection device

60: Control Department

70: heating device

G: Process gas

N: inert gas

A: Clean gas

F: Smoke

FIG. 1 is a diagram illustrating a semiconductor processing equipment with a cleaning function according to the present invention.

FIG. 2 is a diagram illustrating a semiconductor process equipment including a control unit, a detection device, and a heating device in the semiconductor process equipment of FIG. 1.

FIG. 3 is a diagram illustrating the sequence and method of controlling each configuration in order to perform the cleaning method of the semiconductor process equipment of the present invention.

Fig. 4 is a diagram illustrating air supply and discharge inside the chamber when cleaning is performed according to the cleaning method of Fig. 3.

Hereinafter, referring to the accompanying drawings, a detailed description will be given of the semiconductor processing equipment with cleaning function and the cleaning method of the semiconductor processing equipment using the cleaning function according to the present invention.

Generally, in order to etch the thin film formed on the substrate, chlorine (Cl) series (Cl ₂ /Ar, Cl ₂ /N ₂ , Cl ₂ /He, Cl ₂ /BCl ₃ /Ar, BCl ₃ /Ar, BrCl ₃ , Gases such as SiCl ₄ /Ar, CCl ₂ F ₂ /H ₂ /Ar, etc.) are used as process gases. When the etching process is repeatedly performed using this process gas, reaction by-products are generated inside the chamber. The reaction byproducts are deposited inside the chamber and act as a source of contamination on the substrate in the subsequent process. Therefore, in order to remove them, the chamber needs to undergo a periodic cleaning process. As a method of cleaning the chamber, there is a method in which an operator opens the chamber cover to clean the inside of the chamber. In this case, when the operator opens the chamber cover, atmospheric gas containing moisture flows into the inside of the chamber, thereby generating fumes. The flue gas may be hydrogen chloride (HCl) generated by the reaction between chlorine remaining in the chamber and moisture (H ₂ O) in the atmosphere.

The flue gas may be, for example, hydrogen chloride (HCl) generated by a rapid reaction between chlorine remaining in the interior of the chamber and atmospheric gas flowing into the interior of the chamber when the chamber cover is opened.

Since the smoke is a component harmful to the human body, the operator opens the chamber cover after wearing a gas mask or the like, and then removes the reaction by-products deposited on the inside of the chamber. However, the problem with this cleaning process is that workers may inhale harmful substances.

As another method of cleaning the chamber, the cover of the chamber is not opened, the cleaning gas that reacts with chlorine is supplied to the inside of the chamber to generate flue gas, and the smoke is discharged through a pump connected to the chamber. After that, the operator opens the chamber cover to remove the reaction byproducts deposited on the inside of the chamber and on the components. However, the problem with this method is that the flue gas is fixed in the form of powder in the pumping pipe connecting the chamber and the pump having a relatively lower temperature than the temperature inside the chamber, thereby reducing the performance of the semiconductor processing equipment. In addition, there is a problem that when a pump is used, since the discharge rate of chlorine is faster than the generation rate of hydrogen chloride, the chlorine is directly sucked into the pump, causing corrosion to the components of the pump, and the semiconductor processing equipment malfunctions.

In order to solve this problem, as shown in FIG. 1, a semiconductor processing equipment 100 with a cleaning function according to the present invention includes a chamber 10, a first exhaust portion 20, a first air supply portion 30, a second air supply portion 40, and The second exhaust part 50.

The chamber 10 provides a substrate processing space inside.

The first exhaust part 20 exhausts the process gas G from the inside of the chamber 10.

At this time, the first exhaust part 20 may be a pump that keeps the inside of the chamber 10 in a vacuum state and discharges the process gas G.

In addition, the process gas G may be a chlorine (Cl) system (Cl ₂ /Ar, Cl ₂ /N ₂ , Cl ₂ /He, Cl ₂ /BCl ₃ /Ar, BCl ₃ /Ar, BrCl ₃ , SiCl ₄ /Ar, CCl ₂ F ₂ /H ₂ /Ar, etc.).

The first gas supply part 30 supplies the inert gas N into the chamber 10.

At this time, the inert gas N may be nitrogen (N ₂ ), argon (Ar), helium (He) and other gases that do not participate in reaction processes such as etching.

The second air supply part 40 supplies the cleaning gas A to the inside of the chamber 10 to generate smoke F inside the chamber 10.

At this time, the cleaning gas A may be atmospheric gas containing moisture (H ₂ O).

In addition, the second gas supply part 40 may be a valve provided on the wall of the chamber 10, or may be a valve that is not connected to a flow path for supplying gas from the outside and is opened to supply the outside of the chamber 10 to the inside of the chamber 10. Atmospheric gas.

The second exhaust part 50 may exhaust the inert gas N, the clean gas A, the flue gas F, or a mixed gas mixed with these from the inside of the chamber 10.

According to this configuration, the second exhaust part 50 that discharges the flue gas F is physically separated from the first exhaust part 20.

In addition, even if the lid of the chamber 10 is not opened, the inert gas N can be supplied into the chamber 10 through the first gas supply part 30 to adjust the pressure inside the chamber 10, and the second gas supply part 40 can be supplied to the inside of the chamber 10 The gas A is cleaned to generate flue gas F, and the generated flue gas F is discharged through the second exhaust part 50.

In this way, the smoke F is removed before the operator performs the operation of opening the cover of the chamber 10, thereby solving the problem that the operator may inhale harmful substances during the cleaning process.

In addition, the second exhaust part 50 that discharges the flue gas F is physically separated from the first exhaust part 20, so as to solve the problem that the flue gas F is fixed on the pumping pipe in the form of powder. As a result, the problem of reduced performance or frequent failures of semiconductor manufacturing equipment can be solved. In addition, it can solve the problem of causing corrosion on the pump components and causing the semiconductor process equipment to malfunction.

The second exhaust part 50 may include an exhaust valve 51 and a suction fan 52.

The exhaust valve 51 can be connected to the chamber 10 to open and close the discharge of the inert gas N, the clean gas A, the flue gas F or the mixed gas mixed with these.

The suction fan 52 can form an air flow in the direction of the exhaust valve 51 inside the chamber 10 and adjust the discharge amount so that the inert gas N, the clean gas A, the flue gas F or the mixed gas mixed with these can be smoothly discharged to the outside.

Different from the pump, the suction fan 52 can adjust the rotation speed (RPM, Revolution Per Minute (rotation per minute)) to adjust the speed at which the cleaning gas A is supplied from the second air supply part 40 to the inside of the chamber 10. The speed at which the inside of the chamber 10 reacts to generate the flue gas F and the speed at which the flue gas F in the inside of the chamber 10 is discharged from the second exhaust part 50, so that the amount of produced and discharged flue gas F can be adjusted.

Regarding the suction fan 52, when the flue gas F is fixed on the second exhaust part 50 in the form of powder and the discharge amount is reduced, unlike a pump, the suction fan 52 can adjust the rotation speed so that it can be compared with the discharge amount. Decrease correspondingly increases the rotation speed and increases emissions.

In this way, the suction fan 52 has the effect of being able to adjust the amount of generated and discharged flue gas F.

2, the semiconductor processing equipment 100 with a cleaning function of the present invention further includes a control unit for controlling more than one of the first exhaust part 20, the first air supply part 30, the second air supply part 40, and the second exhaust part 50 Control unit 60.

The control unit 60 can control one or more of the first exhaust unit 20, the first air supply unit 30, the second air supply unit 40, and the second exhaust unit 50, or can control the first exhaust unit 20, Two or more of the first air supply unit 30, the second air supply unit 40, and the second exhaust unit 50.

The control part 60 may control the first exhaust part 20 and the first air supply part 30 so that the first air supply part 30 is turned on in a state where the discharge from the first exhaust part 20 is cut off so that the inert gas N is supplied to the cavity. Room 10 interior.

The control unit 60 can control the first air supply unit 30 and the second exhaust unit 50 so that the inert gas N is supplied to the second exhaust unit with a certain amount or more from the first air supply unit 30 to the inside of the chamber 10 50 emissions.

The control unit 60 may control the second exhaust unit 50 and the second air supply unit 40 so that the cleaning gas A is supplied from the second air supply unit 40 to the inside of the chamber 10 in a state of discharging to the second exhaust unit 50 .

The control unit 60 controls the rotation speed of the suction fan 52, and can adjust the speed at which the cleaning gas A is supplied from the second air supply unit 40 to the inside of the chamber 10, and the speed at which the cleaning gas A reacts inside the chamber 10 to generate flue gas F , The speed at which the flue gas F inside the chamber 10 is discharged from the second exhaust part 50, so that the amount of flue gas F generated and discharged can be adjusted.

In this way, the control unit 60 has the effect of being able to adjust the amount of generated and discharged flue gas F.

The conventional semiconductor manufacturing equipment has a problem that it cannot be confirmed whether the flue gas F inside the chamber 10 is sufficiently removed. Therefore, the problem is that the operator's subjective judgment or empirical data can only be used to judge whether the smoke F is sufficiently removed.

In order to solve this problem, the semiconductor processing equipment 100 with cleaning function according to the present invention further includes a detection device 53 for detecting the residual amount of the flue gas F.

The detection device 53 is provided in the second exhaust portion 50 and detects the residual amount of the flue gas F discharged to the outside of the chamber 10.

At this time, the detection device 53 may be a device that directly detects hydrogen chloride or detects the presence or absence of molecules constituting hydrogen chloride to detect the residual amount of the flue gas F.

The driving of the second air supply unit 40 and the second exhaust unit 50 can be operated based on the residual amount value of the flue gas F detected from the detection device 53, or the second air supply unit 40 and the second exhaust unit can be controlled by the control unit 60 The driving of the air part 50.

The residual value of the flue gas F detected from the detection device 53 is input to the control unit 60, and the control unit 60 can control the driving of the second air supply unit 40 and the second exhaust unit 50 based on the input value.

For example, based on the value input to the control unit 60, the driving of the second air supply unit 40 and the second exhaust unit 50 can be interrupted when the flue gas F is sufficiently removed, and based on the value input to the control unit 60, when the flue gas F When it is not sufficiently removed, the driving of the second air supply part 40 and the second exhaust part 50 can be continued.

According to this configuration, the detection device 53 confirms the residual amount of the flue gas F discharged from the second exhaust portion 50, and thereby confirms the flue gas F inside the chamber 10 based on the residual amount value of the flue gas F measured by the detection device 53 Based on this, it can be objectively judged whether the flue gas F is sufficiently removed.

In this way, the detection device 53 has the effect of being able to objectively determine whether the smoke F is sufficiently removed.

On the other hand, the residual amount value of the flue gas F detected by the detection device 53 is input to the control unit 60, and based on the input value, the driving of the second air supply unit 40 and the second exhaust unit 50 can be controlled.

In addition, the residual value of the flue gas F detected by the detecting device 53 is input to the control unit 60, the input value is compared with the reference setting value, the rotation speed of the suction fan 52 is adjusted, and the cleaning gas A reaction time is adjusted, thereby The amount of smoke F produced can be adjusted.

For example, the residual amount value of the flue gas F detected from the detection device 53 is input to the control unit 60. When the input value is smaller than the reference set value, it is determined that the cleaning gas A reacts to produce flue gas F at a faster rate, and the control The part 60 reduces the rotation speed of the suction fan 52 to increase the reaction time of the cleaning gas A, so that the amount of smoke F generated can be increased.

In addition, the residual amount value of the flue gas F detected from the detection device 53 is input to the control unit 60, and when the input value is greater than the reference setting value, it is determined that the amount of flue gas F generated by the reaction with the cleaning gas A is exhausted. The control unit 60 increases the rotation speed of the suction fan 52 to reduce the reaction time of the cleaning gas A, so that the amount of smoke F generated can be reduced.

In this way, the detection device 53 and the control unit 60 have the effect of adjusting the amount of smoke F generated according to the situation.

A problem with the conventional semiconductor manufacturing equipment is that the flue gas F is fixed in the second exhaust part 50 in the form of powder due to the decrease in temperature.

In order to solve this problem, as shown in FIG. 2, the semiconductor processing equipment 100 with cleaning function according to the present invention further includes a heating device 70.

The heating device 70 may be arranged on the side of the second air supply part 40 or the second exhaust part 50 to heat the flue gas F. It is shown in FIG. 2 that the heating device 70 is arranged on the side of the second air supply part 40, but this is only an example and is not limited to this.

The heating device 70 may be a heating jacket (HEATER JACKET) or a heating tube that wraps the pipe of the second air supply part 40 or the second exhaust part 50.

At this time, gas or liquid as a heat conductor that transfers heat can be looped inside the heating tube.

The heating device 70 can increase the temperature of the flue gas F by heating the pipe of the second air supply part 40 or the second exhaust part 50.

In this way, when the temperature of the flue gas F is increased, it has the effect of preventing the flue gas F from being fixed in the cavity 10 in the form of powder.

Hereinafter, referring to FIG. 3 and FIG. 4 together, a method for cleaning a semiconductor process equipment using the above-mentioned semiconductor process equipment 100 will be specifically described.

3, in step S1, the control unit 60 interrupts the discharge of the process gas G from the first exhaust unit 20 into the chamber 10. In addition, the inert gas N is supplied from the first gas supply unit 30 to the inside of the chamber 10 until the reference set pressure is reached.

At this time, the interruption of the discharge of the process gas G from the first exhaust portion 20 to the inside of the chamber 10 may be interrupting the driving of the pump or cutting off the pumping pipe connecting the chamber 10 and the pump, so that the flue gas F can pass through The first exhaust part 20 does not discharge.

As shown in FIG. 3, the process gas G is discharged from the first exhaust part 20 into the chamber 10 until the step S1 is reached. Then, as shown in FIG. 4, the process gas G in the chamber 10 decreases. After that, in step S1, at the point in time when the discharge of the process gas G is interrupted, as the inert gas N is supplied from the first gas supply part 30 into the chamber 10, the inert gas N in the chamber 10 arrives from step S1 The period of the S2 step increases.

Next, in step S2, when the pressure inside the chamber 10 reaches the reference set pressure, the supply of the inert gas N from the first gas supply unit 30 is interrupted, and the second exhaust unit 50 is activated.

At this time, the reference setting pressure may mean a pressure that is relatively larger than the pressure during the etching process and lower than the atmospheric pressure, or the reference setting pressure may mean a pressure at the atmospheric pressure level.

In addition, as shown in FIG. 3, the step of interrupting the supply of the inert gas N from the first gas supply unit 30 and the step of starting the second exhaust unit 50 are sequentially performed, but it is not limited to this, and the control unit 60 may also be performed simultaneously The step of interrupting the supply of the inert gas N from the first gas supply unit 30 and the step of activating the second exhaust unit 50 are performed, and the inert gas N from the first gas supply unit 30 may be interrupted after the second exhaust unit 50 is activated. Supply.

The second exhaust part 50 is activated to form a gas flow inside the chamber 10 so that the inert gas N inside the chamber 10 is discharged to the outside of the chamber 10. At this time, in the step of forming an air flow inside the chamber 10, after the suction fan 52 is activated, the exhaust valve 51 is opened, so that an air flow for discharging the inert gas N to the second exhaust part 50 can be formed inside the chamber 10.

Next, in step S3, the cleaning gas A is supplied from the second gas supply unit 40 to the inside of the chamber 10.

At this time, the cleaning gas A may be atmospheric gas containing moisture.

The reason why the clean gas A is supplied to the inside of the chamber 10 after the air flow of the inert gas N is discharged to the second exhaust part 50 is that if the clean gas is supplied to the inside of the chamber 10 before the air flow to the second exhaust part 50 is formed A, since the pressure inside the chamber 10 is greater than the pressure outside the chamber 10, an airflow is formed toward the second air supply part 40, and the flue gas F leaks out of the chamber 10 through the second air supply part 40, thereby contaminating the cavity The surrounding environment outside the chamber 10 has a harmful effect on the workers.

In this way, the flow of the inert gas N to the second exhaust part 50 is formed and then the cleaning gas A is supplied to the inside of the chamber 10, thereby having the effect of preventing the flue gas F from leaking out of the chamber 10 through the second air supply part 40 .

According to Fig. 4, in step S1, in order to increase the pressure inside the chamber 10 whose pressure is reduced due to the discharge of the process gas G, the inert gas N can be supplied from the first gas supply part 30 to gradually increase the pressure inside the chamber 10 pressure.

Next, in step S2, when the pressure inside the chamber 10 reaches the reference set pressure, the supply of the inert gas N from the first gas supply unit 30 is interrupted, and the second exhaust unit 50 is activated.

When the second exhaust part 50 is activated, the inert gas N is discharged through the second exhaust part 50, and the inert gas N inside the chamber 10 gradually decreases, so that the pressure inside the chamber 10 decreases.

Next, in step S3, the inert gas N is gradually reduced, and the pressure inside the chamber 10 becomes lower than the pressure outside the chamber 10. Therefore, an amount of the cleaning gas A corresponding to the decrease in the inert gas N is supplied from the second gas supply part. 40 flows into the chamber 10.

The pressure inside the chamber 10 is continuously kept lower than the pressure outside the chamber 10 by the second exhaust part 50, so the cleaning gas A continues to flow into the chamber 10 from the second air supply part 40.

In this way, by adjusting the pressure in the second exhaust portion 50 and the inside of the chamber 10, there is an effect that the cleaning gas A continues to flow into the inside of the chamber 10.

Above, the embodiments of the present invention have been described with reference to the accompanying drawings. However, those with ordinary knowledge in the technical field to which the present invention belongs can understand that other specific details can be used without changing the technical idea or essential features of the present invention. Form implementation. Therefore, it should be understood that the above-described embodiments are illustrative and not restrictive in all aspects.

100: Semiconductor process equipment

10: Chamber

20: First exhaust part

30: The first air supply part

40: The second air supply part

50: The second exhaust part

51: exhaust valve

52: Suction fan

G: Process gas

N: inert gas

A: Clean gas

F: Smoke

Claims (10)

A semiconductor process equipment with a cleaning function, wherein the semiconductor process equipment with a cleaning function includes: a chamber for providing a substrate processing space inside; a first exhaust part for discharging process gas from the inside of the chamber; A gas supply part supplies an inert gas to the inside of the chamber; a second gas supply part supplies a clean gas to the inside of the chamber to generate a flue gas inside the chamber; and, a second exhaust part Venting the inert gas, the clean gas, the flue gas or a mixed gas from the inside of the chamber, the mixed gas is mixed with the inert gas, the clean gas and the flue gas, wherein the second exhaust part includes: A suction fan adjusts the discharge amount of the inert gas, the clean gas, the flue gas or the mixed gas. According to the first item of the scope of patent application, the semiconductor process equipment with cleaning function, wherein the second exhaust part further includes: an exhaust valve connected to the chamber and opens and closes the inert gas, the cleaning gas, and the Emission of flue gas or the mixed gas. The semiconductor process equipment with cleaning function as described in item 2 of the scope of patent application, in which, The semiconductor process equipment further includes a control part that controls the suction fan, and the control part controls the rotation speed of the suction fan. The semiconductor process equipment with cleaning function as described in item 3 of the scope of the patent application, wherein the semiconductor process equipment further includes a detection device which is arranged in the second exhaust part and detects the residual amount of the flue gas The value of the residual amount of the flue gas detected by the detection device is input to the control unit, and the input value is compared with a reference setting value to adjust the rotation speed of the suction fan. The semiconductor process equipment with cleaning function as described in item 1 of the scope of patent application, wherein the semiconductor process equipment further includes a control part that controls the first exhaust part, the first air supply part, and the More than one of the second air supply part and the second exhaust part. The semiconductor process equipment with cleaning function as described in item 1 of the scope of patent application, wherein the semiconductor process equipment further includes a detection device which is arranged in the second exhaust part and detects the residual amount of the flue gas . The semiconductor process equipment with cleaning function as described in item 6 of the scope of patent application, in which, The semiconductor process equipment further includes a control unit that inputs the value of the residual amount of the flue gas detected from the detection device, and the control unit controls the second air supply unit and the second gas supply unit based on the input value. Drive of the exhaust part. The semiconductor process equipment with cleaning function as described in item 1 of the scope of patent application, wherein the semiconductor process equipment further includes a heating device arranged on the side of the second air supply part or the second exhaust part, And heat the flue gas. A method for cleaning semiconductor processing equipment, using a semiconductor processing equipment including a first exhaust part, a first air supply part, a second air supply part and a second exhaust part connected to a chamber to remove A flue gas existing in the interior of the chamber, wherein the cleaning method includes the following steps: supplying an inert gas from the first gas supply part to the interior of the chamber until the interior of the chamber reaches a reference set pressure; After the pressure inside the chamber reaches the reference set pressure, the supply of the inert gas from the first gas supply part is interrupted; the second exhaust part is activated to form a gas flow inside the chamber so that the pressure inside the chamber The inert gas is discharged to the inside of the chamber; and, a clean gas is supplied from the second air supply part to the inside of the chamber, wherein the second exhaust part includes a suction fan to form an air flow inside the chamber The step is to adjust the discharge amount of the inert gas by the suction fan. The cleaning method of semiconductor process equipment as described in claim 9, wherein, in the step of supplying the cleaning gas, the cleaning gas replaces the inert gas to maintain the pressure inside the chamber than the pressure outside the chamber Therefore, the cleaning gas continues to flow from the second air supply part to the inside of the chamber.

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