KR100266681B1 - Cleaning apparatus for semiconductor wafer manufacturing etching equipment - Google Patents

Cleaning apparatus for semiconductor wafer manufacturing etching equipment Download PDF

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KR100266681B1
KR100266681B1 KR1019980013948A KR19980013948A KR100266681B1 KR 100266681 B1 KR100266681 B1 KR 100266681B1 KR 1019980013948 A KR1019980013948 A KR 1019980013948A KR 19980013948 A KR19980013948 A KR 19980013948A KR 100266681 B1 KR100266681 B1 KR 100266681B1
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chamber
line
semiconductor wafer
supply line
purge
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KR1019980013948A
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KR19990080587A (en
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최병찬
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A cleaning device of an etching system for manufacturing a semiconductor wafer is provided to protect a worker from a harmful reactant by performing a mechanical cleaning process. CONSTITUTION: A vapor injection portion(40) injects vapor to an inside of a chamber(21) with the lid off. Purging portion(50) supplies a reactant reacted with the vapor injected from the vapor injection portion(40). A purge gas-exhausting portion exhausts the purged reactant from the purging portion(50). A worker is protected from a harmful reactant by cleaning the inside of the chamber(21) when the chamber lid(22) is opened.

Description

반도체 웨이퍼 제조용 식각장비의 세정장치Cleaner of Etching Equipment for Semiconductor Wafer Manufacturing

본 발명은 반도체 웨이퍼 제조용 식각장비의 세정장치에 관한 것으로, 특히 기계적인 방법으로 포로세스 챔버를 세정할 수 있도록 하여 작업자가 직접세정하는데 따른 안전사고의 위험을 방지하도록 하는데 적합한 반도체 웨이퍼 제조용 식각장비의 세정장치에 관한 것이다.The present invention relates to a cleaning apparatus for an etching apparatus for manufacturing a semiconductor wafer, and more particularly, to an apparatus for cleaning a pores process chamber by a mechanical method, which is suitable for preventing the risk of a safety accident caused by an operator directly cleaning. It relates to a cleaning device.

일반적으로 반도체 웨이퍼 제조공정 중 식각공정에서는 기판에 증착된 메탈(AL,W)의 일정부분을 제거하게 되는데, 이와 같은 식각공정을 진행하기 위한 식각장비가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, in the etching process of the semiconductor wafer manufacturing process to remove a certain portion of the metal (AL, W) deposited on the substrate, the etching equipment for performing such an etching process is shown in Figure 1, briefly described Is as follows.

도 1은 종래 반도체 웨이퍼 제조용 식각장비의 구성을 보인 배관도로서, 도시된 바와 같이, 종래 식각장비는 프로세스 챔버(1)의 상측에 복개가능토록 챔버리드(2)가 설치되어 있고, 그 챔버리드(2)에 챔버(1)의 내측으로 공정가스를 주입하기 위한 가스주입라인(3)이 설치되어 있으며, 상기 챔버(1)의 하측에는 배기라인(4)이 연결설치되어 있다.1 is a piping diagram showing the configuration of an etching apparatus for manufacturing a conventional semiconductor wafer. As shown in the drawing, a chamber lead 2 is provided on the upper side of the process chamber 1 so as to be reparable. 2) a gas injection line 3 for injecting process gas into the chamber 1 is provided, and an exhaust line 4 is connected to the lower side of the chamber 1.

상기 배기라인(4) 상에는 트로틀 밸브(5), 게이트 밸브(6), 터보 펌프(7), 포어라인 차단밸브(8), 드라이 펌프(9)가 설치되어 있다.On the exhaust line 4, a throttle valve 5, a gate valve 6, a turbo pump 7, a foreline shutoff valve 8, and a dry pump 9 are provided.

그리고, 상기 포어라인 차단밸브(8) 후단부의 배기라인(4) 상에 연결되도록 챔버(1)의 하측으로 바이패스라인(10)이 설치되어 있고, 그 바이패스라인(10) 상에 챔버 바이패스 버큠 밸브(11)가 설치되어 있다.The bypass line 10 is installed below the chamber 1 so as to be connected to the exhaust line 4 at the rear end of the fore shutoff valve 8, and the chamber bypass is provided on the bypass line 10. The pass valve 11 is provided.

상기와 같이 구성되어 있는 종래 반도체 웨이퍼 제조용 식각장비에서는 일반적인 플라즈마 식각작업시와 마찬가지로 챔버(1)의 내측에 웨이퍼를 위치시킨 상태에서 가스주입라인(3)을 통하여 공정 챔버(1)로 공정가스를 주입하고, 배기라인(4)을 통하여 배기가스를 배출하게 된다.In the etching apparatus for manufacturing a semiconductor wafer manufactured as described above, the process gas is introduced into the process chamber 1 through the gas injection line 3 while the wafer is positioned inside the chamber 1, as in the case of a general plasma etching operation. And exhaust gas is exhausted through the exhaust line 4.

그리고, 상기와 같은 식각작업시에는 공정가스와 메탈이 반응하여 챔버(1)의 내측에 폴리머가 증착되며, 이와 같이 증착된 폴리머를 제거하기 위하여 주기적으로 작업자가 마스크를 쓰고 수증기와 이소프로필알콜로 폴리머 제거작업을 실시한다.During the etching operation, the process gas reacts with the metal to deposit a polymer inside the chamber 1. In order to remove the deposited polymer, a worker periodically wears a mask and uses water vapor and isopropyl alcohol. Perform polymer removal.

그러나, 상기와 같이 구성되어 있는 종래 식각작업장비에서 식각작업시에는 보편적으로 사용되는 Cl2, BCl3등의 공정가스와 Al 메탈이 반응하여 생성되는 반응생성물인 AlCl3는 폴리머 제거시 사용되는 수증기와 반응하여 AlO3, Al2(OH)3,Al2(Cl3)등이 발생되는데, 이는 독성 흄으로서 챔버(1)의 내측을 부식시킬뿐만 아니라, 작업자의 안전사고를 유발시키는 문제점이 있었다.However, AlCl 3 is a reaction product produced by reacting a process gas such as Cl 2 , BCl 3 , and Al metal, which are commonly used during an etching operation, in the conventional etching operation equipment configured as described above. In addition, AlO 3 , Al 2 (OH) 3, Al 2 (Cl 3 ), etc. are generated, which not only corrodes the inside of the chamber 1 as a toxic fume, but also causes a worker's safety accident. .

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 주기적으로 실시하는 폴리머 제거 작업시 쳄버 리드를 복개한 상태에서 기계적인 방법으로 실시할 수 있도록 하여 안전사고를 예방할 수 있도록 하는데 적합한 반도체 웨이퍼 제조용 식각장비의 세정장치를 제공함에 있다.An object of the present invention devised in view of the above problems is that the etching for semiconductor wafer manufacturing suitable to be able to be carried out in a mechanical method in a state of covering the chamber lid during the polymer removal operation to be carried out periodically to prevent safety accidents To provide a cleaning device for the equipment.

도 1은 종래 반도체 웨이퍼 제조용 식각장비의 구성을 보인 배관도.1 is a piping diagram showing a configuration of an etching apparatus for manufacturing a conventional semiconductor wafer.

도 2는 본 발명 세정장치가 설치된 식각장비의 구성을 보인 배관도.Figure 2 is a piping diagram showing the configuration of the etching equipment is installed cleaning device of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

21 : 챔버 22 : 챔버리드21: chamber 22: chamber lead

23 : 가스주입라인 24 : 배기라인23: gas injection line 24: exhaust line

30 : 바이패스라인 40 : 수증기분사수단30: bypass line 40: steam injection means

41 : 디아이 워터 공급라인 42 : 수증기 공급라인41: DI water supply line 42: steam supply line

43 : 기화기 44 : 필터43: carburetor 44: filter

45 : 압력 변환기 46 : 유량조절기45 pressure transducer 46 flow controller

50 : 퍼지수단 51 : 질소공급라인50: purge means 51: nitrogen supply line

52 : 유량조절기 60 : 퍼지가스배출수단52: flow rate regulator 60: purge gas discharge means

61 : 퍼지가스배출라인 62 : 가열선61: purge gas discharge line 62: heating line

상기와 같은 본 발명의 목적을 달성하기 위하여 프로세스 챔버의 상측에 복개된 챔버리드에 가스주입라인이 연결설치되어 있고, 챔버의 하측으로는 배기라인 및 바이패스라인이 연결설치되어 있는 반도체 웨이퍼 제조용 식각장비에 있어서, 상기 챔버리드를 복개한 상태에서 상기 프로세스 챔버의 내측으로 수증기를 분사하기 위한 수증기분사수단과, 그 수증기분사수단에 의하여 분사된 수증기에 의하여 반응된 반응물을 퍼지하기 위한 퍼지수단과, 그 퍼지수단에 의하여 퍼지되는 반응물을 배기하기 위한 퍼지가스배출수단을 구비하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 식각장비의 세정장치가 제공된다.In order to achieve the object of the present invention as described above, the gas injection line is connected to the chamber lid, which is covered on the upper side of the process chamber, and the exhaust line and the bypass line are connected to the lower side of the chamber. An equipment comprising: water vapor injection means for injecting water vapor into the process chamber in a closed state of the chamber lid, and purge means for purging the reactants reacted by the water vapor injected by the water vapor injection means; Provided is a cleaning apparatus for an etching apparatus for manufacturing a semiconductor wafer, comprising a purge gas discharge means for evacuating a reactant purged by the purge means.

이하, 상기와 같이 구성되는 본 발명 반도체 웨이퍼 제조용 식각장비의 세정장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the cleaning device of the etching apparatus for manufacturing a semiconductor wafer of the present invention configured as described above in more detail as follows.

도 2는 본 발명 세정장치가 설치된 식각장비의 구성을 보인 배관도로서, 도시된 바와 같이, 본 발명 세정장치가 설치된 식각장비는 프로세스 챔버(PROCESS CHAMBER)(21)의 상측에 복개가능토록 챔버리드(CHAMBER LID)(22)가 설치되어 있고, 그 챔버리드(22)에 챔버(21)의 내측으로 공정가스를 주입하기 위한 가스주입라인(23)이 설치되어 있으며, 상기 챔버(1)의 하측에는 배기라인(24)이 연결설치되어 있고, 그 배기라인(24) 상에는 트로틀 밸브(THROTTLE VALVE)(25), 게이트 밸브(GATE VALVE)(26), 터보 펌프(TURBO PUMP)(27), 포어라인 차단밸브(28), 드라이 펌프(DRY PUMP)(29)가 설치되어 있으며, 상기 포어라인 차단밸브(28) 후단부의 배기라인(24) 상에 연결되도록 챔버(21)의 하측으로 바이패스라인(30)이 설치되어 있고, 그 바이패스라인(30) 상에 챔버 바이패스 버큠 밸브(31)가 설치되어 있으며, 상기 프로세스 챔버(21)의 일측에는 챔버(21)를 기계적으로 세정하기 위한 세정장치가 설치되어 있다.Figure 2 is a piping diagram showing the configuration of the etching apparatus is equipped with the cleaning device of the present invention, as shown, the etching equipment is equipped with the cleaning device of the present invention is a chamber lead (20) to be covered on the upper side of the process chamber (PROCESS CHAMBER) ( A CHAMBER LID) 22 is provided, and a gas injection line 23 for injecting process gas into the chamber 21 is provided in the chamber lid 22, and below the chamber 1 is provided. An exhaust line 24 is connected and provided on the exhaust line 24, a throttle valve 25, a gate valve 26, a turbo pump 27, and a foreline. A shutoff valve 28 and a dry pump 29 are installed, and a bypass line is provided below the chamber 21 to be connected to the exhaust line 24 at the rear end of the foreline shutoff valve 28. 30 is provided, and the chamber bypass valve 31 is provided on the bypass line 30. , A side of the process chamber 21 has a cleaning device for mechanical cleaning with the chamber 21 is provided.

상기 세정장치는 챔버리드(22)를 복개한 상태에서 상기 프로세스 챔버(21)의 내측으로 수증기를 분사하기 위한 수증기분사수단(40)과, 그 수증기분사수단(40)에 의하여 분사된 수증기에 의하여 반응된 반응물을 퍼지하기 위한 퍼지수단(50)과, 그 퍼지수단(50)에 의하여 퍼지되는 반응물을 배기하기 위한 퍼지가스배출수단(60)으로 구성되어 있다.The cleaning apparatus includes steam injection means (40) for injecting water vapor into the process chamber (21) in the state where the chamber lid (22) is opened, and water vapor injected by the steam injection means (40). Purge means 50 for purging the reacted reactants, and purge gas discharge means 60 for exhausting the reactants purged by the purge means (50).

상기 수증기분사수단(40)은 일측에 디아이 워터 공급라인(41)이 설치되고, 타측에 수증기 공급라인(42)이 설치되어 챔버리드(22)에 수증기를 공급할 수 연결되는 기화기(VAPORIZER)(43)와, 그 기화기(43)로 공급되는 디아이 워터의 이물질을 필터링하기 위하여 디아이 워터 공급라인(41)에 설치되는 필터(FILTER)(44)와, 상기 기화기(43)에서 발생된 수증기를 챔버(21)의 내측으로 일정하게 공급되도록 조절하기 위하여 수증기 공급라인(42) 상에 설치되는 압력 변환기(PRESSURE TRANSDUCER)(45)와 유량조절기(MFC: MASS FLOW CONTROLLER)(46)로 구성되어 있다.The vapor injection means 40 is a vaporizer (VAPORIZER) 43 is connected to the water supply line 41 is installed on one side, the steam supply line 42 is installed on the other side can supply water vapor to the chamber lid 22 ), A filter (44) installed in the DI water supply line 41 to filter foreign matters of the DI water supplied to the vaporizer 43, and the steam generated in the vaporizer 43 is chamber ( 21 is composed of a pressure transducer (PRESSURE TRANSDUCER) (45) and a flow controller (MFC: MASS FLOW CONTROLLER) (46) installed on the steam supply line (42) to regulate the constant supply to the inside.

상기 퍼지수단(50)은 상기 수증기 공급라인(42) 상에 연결설치되어 챔버(21)의 내측으로 질소를 퍼지하기 위한 질소공급라인(51)과, 그 질소공급라인(51) 상에 설치되는 유량조절기(52)로 구성되어 있다.The purge means 50 is connected to the steam supply line 42 is installed on the nitrogen supply line 51 and the nitrogen supply line 51 for purging the nitrogen to the inside of the chamber 21 The flow regulator 52 is comprised.

상기 질소공급라인(51)의 후단부에는 병열로 질소가스외의 다른 퍼지가스를 사용할 수 있도록 유량조절기(52')(52")가 구비된 수개의 별도라인이 연결되어 있다.The rear end of the nitrogen supply line 51 is connected to several separate lines provided with flow regulators 52 'and 52 "to use other purge gas other than nitrogen gas in parallel.

상기 퍼지가스배출수단(60)은 상기 챔버(21)와 배기라인(24)이 연결되도록 바이패스라인(30)의 후방에 설치되는 퍼지가스배출라인(61)과, 그 퍼지가스배출라인(61)을 감싸도록 설치되는 가열선(HEATING COIL)(62)으로 구성되어 있다.The purge gas discharge means 60 is a purge gas discharge line 61 installed behind the bypass line 30 so that the chamber 21 and the exhaust line 24 are connected, and the purge gas discharge line 61. ) Is composed of a heating wire (HEATING COIL) 62 is installed to surround.

상기와 같이 구성되어 있는 본 발명 세정장치가 구비된 반도체 웨이퍼 제조용 식각장비는 챔버(21)에 내측에 웨이퍼를 로딩하고, 가스주입라인(23)을 통하여 공정가스를 주입하며, 프로세스 챔버(21)의 내측에 플라즈마를 발생시켜서 웨이퍼에 증착된 알루미늄 막의 일정부분을 제거한다.Etching apparatus for manufacturing a semiconductor wafer equipped with the present invention cleaning device configured as described above loads the wafer inside the chamber 21, injects the process gas through the gas injection line 23, the process chamber 21 Plasma is generated inside to remove a portion of the aluminum film deposited on the wafer.

그리고, 일정기간동안 상기와 같은 증착작업을 반복한 다음, 챔버(21)의 내측에 증착된 폴리머를 제거하기 위한 세정작업을 실시하게 되는데, 그 순서는 다음과 같다.Then, after repeating the above deposition for a certain period of time, the cleaning operation to remove the polymer deposited on the inside of the chamber 21 is performed, the order is as follows.

먼저, 챔버리드(22)가 작업시와 마찬가지로 복개된 상태에서 디아이 워터 공급라인(41) 상에 설치된 공압밸브(V5)를 열음(OPEN)과 동시에 수증기 공급라인(42) 상에 설치된 공압밸브(V2)(V3)(V4)들을 열어서 기화기(43)에서 발생된 수증기가 챔버(21)의 내측으로 공급되어 증착된 폴리머와 반응되도록 한다.First, the pneumatic valve V5 installed on the DI water supply line 41 is opened in the same state as when the chamber lid 22 is opened, and the pneumatic valve installed on the steam supply line 42 is opened at the same time. V2) V3 and V4 are opened to allow water vapor generated in the vaporizer 43 to be supplied into the chamber 21 to react with the deposited polymer.

그런 다음, 디아이 워터 공급라인(41) 상의 공압밸브(V5)와 수증기 공급라인(42) 상의 공압밸브(V2)(V3)(V4)들을 닫고(CLOSE), 질소공급라인(51) 상에 설치된 공압밸브(V7)를 열어서 챔버(21)의 내측에 질소가스를 퍼지함과 동시에 퍼지가스배출라인(61) 상에 설치된 공압밸브(V1)를 열어서 챔버(21)에서 퍼지가스에 의하여 배출되는 유독성 반응물과 흄들이 퍼지가스배출라인(61)을 통하여 배출되도록 한다.Then, the pneumatic valve V5 on the DI water supply line 41 and the pneumatic valves V2, V3 and V4 on the steam supply line 42 are closed (CLOSE) and installed on the nitrogen supply line 51. Toxic gas discharged by the purge gas from the chamber 21 by opening the pneumatic valve V7 to purge the nitrogen gas inside the chamber 21 and at the same time by opening the pneumatic valve V1 installed on the purge gas discharge line 61. The reactants and the fumes are discharged through the purge gas discharge line 61.

그리고, 상기와 같이 유독성 반응물과 흄들이 퍼지가스배출라인(61)으로 배출시에는 퍼지가스배출라인(61)을 감싸도록 설치된 가열선(62)을 가열하여 퍼지가스배출라인(61)을 일정온도로 가열함으로서, 퍼지가스배출라인(61)의 내측에 유독성 반응물과 흄들이 증착되지 않도록 한다.When the toxic reactants and the fumes are discharged to the purge gas discharge line 61, the heating line 62 is installed to surround the purge gas discharge line 61, and the purge gas discharge line 61 is heated at a predetermined temperature. By heating in such a way that the toxic reactants and the fumes are not deposited inside the purge gas discharge line 61.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 제조용 식각장비의 세정장치는 챔버리드가 복개된 상태에서 챔버의 내측으로 수증기를 분사하기 위한 수증기분사수단과, 그 수증기분사수단에 의하여 분사된 수증기에 의하여 반응된 반응물을 퍼지하기 위한 퍼지수단과, 그 퍼지수단에 의하여 퍼지되는 반응물을 배기하기 위한 퍼지가스배출수단을 구비하여서 구성되어, 챔버리드를 복개한 상태에서 챔버의 내측을 세정함으로써, 종래와 같이 작업자가 직접 세정할 경우에 유독성 반응물 및 흄에 의하여 발생될 수 있는 안전사고를 방지하는 효과가 있다.As described above in detail, the cleaning apparatus of the etching apparatus for manufacturing a semiconductor wafer according to the present invention includes steam injection means for injecting water vapor into the chamber in a state in which the chamber lid is covered with water vapor injected by the water vapor injection means. A purge means for purging the reacted reactants and a purge gas discharge means for evacuating the reactants purged by the purge means, and cleaning the inside of the chamber in a state where the chamber lid is covered, as in the prior art. When the operator cleans himself, it has the effect of preventing safety accidents that may be caused by toxic reactants and fumes.

Claims (4)

프로세스 챔버의 상측에 복개된 챔버리드에 가스주입라인이 연결설치되어 있고, 챔버의 하측으로는 배기라인 및 바이패스라인이 연결설치되어 있는 반도체 웨이퍼 제조용 식각장비에 있어서, 상기 챔버리드를 복개한 상태에서 상기 프로세스 챔버의 내측으로 수증기를 분사하기 위한 수증기분사수단과, 그 수증기분사수단에 의하여 분사된 수증기에 의하여 반응된 반응물을 퍼지하기 위한 퍼지수단과, 그 퍼지수단에 의하여 퍼지되는 반응물을 배기하기 위한 퍼지가스배출수단으로 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 식각장비의 세정장치.In an etching apparatus for manufacturing a semiconductor wafer, in which a gas injection line is connected to an exposed chamber lead on an upper side of a process chamber, and an exhaust line and a bypass line are connected to a lower side of a chamber, the chamber lid is opened. Steam injection means for injecting steam into the process chamber, purge means for purging the reactants reacted by the water vapor injected by the steam injection means, and exhausting the reactants purged by the purge means. Cleaning apparatus for etching equipment for manufacturing a semiconductor wafer, characterized in that consisting of purge gas discharge means for. 제 1항에 있어서, 상기 수증기분사수단은 일측에 디아이 워터 공급라인이 설치되고, 타측에 수증기 공급라인이 설치되는 기화기와, 상기 디아이 워터 공급라인에 설치되는 필터와, 상기 수증기 공급라인 상에 설치되는 압력 변환기와 유량조절기로 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 식각장비의 세정장치.According to claim 1, wherein the steam injection means is a vaporizer supply line is installed on one side, the water vapor supply line is installed on the other side, the filter is installed on the DI water supply line, and installed on the steam supply line Cleaning apparatus for etching equipment for manufacturing a semiconductor wafer, characterized in that consisting of a pressure transducer and a flow regulator. 제 1항에 있어서, 상기 퍼지수단은 상기 수증기 공급라인 상에 연결설치되는 질소공급라인과, 그 질소공급라인 상에 설치되는 유량조절기로 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 식각장비의 세정장치.The apparatus of claim 1, wherein the purge means comprises a nitrogen supply line connected to the steam supply line and a flow rate regulator installed on the nitrogen supply line. 제 1항에 있어서, 상기 퍼지가스배출수단은 상기 챔버와 배기라인이 연결되도록 바이패스라인의 후방에 설치되는 퍼지가스배출라인과, 그 퍼지가스배출라인을 감싸도록 설치되는 가열선으로 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 식각장비의 세정장치.According to claim 1, wherein the purge gas discharge means is composed of a purge gas discharge line installed in the rear of the bypass line so that the chamber and the exhaust line is connected, and a heating line provided to surround the purge gas discharge line A cleaning apparatus for etching equipment for manufacturing a semiconductor wafer.
KR1019980013948A 1998-04-18 1998-04-18 Cleaning apparatus for semiconductor wafer manufacturing etching equipment KR100266681B1 (en)

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Publication number Priority date Publication date Assignee Title
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