JP2001179079A - Ozone treating device and ozone treating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ozone treating device which is capable of increasing an ozone flow rate and applying an ozone treatment uniformly to the entire face of an object to be treated as well as an ozone treating method. SOLUTION: The ozone treating device 1 is equipped with an ozone supply pipe 8 for supplying ozone to the interior of a treatment chamber 3a and an exhaust pipe 14 connected to the treatment chamber 3a. The ozone supply pipe 8 is mounted on the side face of a manifold 3. The exhaust pipe 14 is connected to an exhaust opening 13 arranged opposite to the ozone supply pipe 8. The ozone is supplied from the ozone supply pipe 8 so that the ozone reaches the ceiling of a reaction pipe 2, and is supplied to a treatment region 3b by discharging gas from the interior of the treatment chamber 3a by means of a vacuum pump 16.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ozone treatment apparatus and an ozone treatment method, and more particularly, to an ozone treatment apparatus and an ozone treatment method for performing ozone treatment on an object to be processed, for example, a semiconductor wafer.

[0002]

2. Description of the Related Art Oxidation treatment using ozone is performed in semiconductor device manufacturing processes, for example, a film forming process and an ashing process. For example, in the film forming process, a thermal oxidation process using ozone is performed using a heat treatment apparatus 51 as shown in FIG. 2 to form a silicon oxide film on a processing target such as a semiconductor wafer. The formation of the silicon oxide film using the heat treatment apparatus 51 shown in FIG. 2 is performed as follows.

[0003] First, a reaction tube 52 having a double tube structure including an inner tube 52a and an outer tube 52b is heated to a predetermined temperature by a heater 53. Next, a wafer boat 55 accommodating a plurality of semiconductor wafers 54 is loaded into the reaction tube 52 (the inner tube 52a). Subsequently, the gas in the reaction tube 52 is exhausted from the exhaust port 56, and the pressure inside the reaction tube 52 is reduced to a predetermined pressure.
When the pressure inside the reaction tube 52 is reduced to a predetermined pressure, ozone is supplied from the gas supply tube 57 into the inner tube 52a. Then, the ozone causes an oxidation reaction on the surface of the semiconductor wafer 54, whereby a silicon oxide film is formed on the surface of the semiconductor wafer 54.

In such an oxidation treatment using ozone, it is necessary to uniformly treat the entire surface of the object to be treated. For example, in the step of forming a silicon oxide film, it is necessary to form a silicon oxide film having a uniform thickness on the semiconductor wafer 54. Generally, in order to improve the uniformity of the silicon oxide film, it is preferable to reduce the pressure in the reaction tube 52.

[0005]

However, in order to reduce the pressure in the reaction tube 52, it is necessary to reduce the flow rate of ozone supplied into the reaction tube 52. And the effect of ozone treatment cannot be obtained.

When the flow rate of ozone is increased in order to obtain the effect of ozone treatment, the pressure in the reaction tube 52 varies widely, and the pressure in the reaction tube 52 cannot be maintained at a low level. there were.

Further, in order to thermally oxidize the surface of the semiconductor wafer 54 using ozone, it is necessary to supply ozone to the semiconductor wafer 54 while maintaining the active state of ozone. In order to maintain the active state of ozone, for example, it is necessary to supply ozone to the semiconductor wafer 54 while maintaining the pressure at a low pressure. However, even if the inside of the reaction tube 52 is maintained at a low pressure, the inside of the gas supply tube 57 tends to have a higher pressure than the inside of the reaction tube 52, and the activity of ozone in the gas supply tube 57 may be lost.

The present invention has been made in view of the above problems, and has an ozone treatment apparatus and an ozone treatment method capable of increasing the flow rate of ozone and performing uniform ozone treatment on the entire surface of the object to be treated. The purpose is to provide. Another object of the present invention is to provide an ozone treatment apparatus and an ozone treatment method capable of increasing the flow rate of ozone and maintaining the pressure in the reaction tube at a low pressure. Another object of the present invention is to provide an ozone treatment apparatus and an ozone treatment method that can maintain the active state of ozone.

[0009]

To achieve the above object, an ozone treatment apparatus according to a first aspect of the present invention comprises:
An ozone treatment apparatus for performing ozone treatment on an object to be processed, the apparatus having a processing region for performing ozone treatment on the object to be processed,
A processing chamber having a non-processing area on at least one side of the processing area, and the processing chamber being arranged in the non-processing area on one side of the processing area and reaching the other side of the processing area from the non-processing area. At least one ozone supply pipe for supplying ozone to the ozone supply means, ozone supply means connected to the ozone supply pipe, and an exhaust port provided in a non-processing area on one side of the processing area to exhaust gas in the processing chamber And an exhaust unit connected to the exhaust port to supply the ozone reaching the other side of the processing region to the processing region by exhausting gas in the processing chamber.

In this configuration, the ozone is supplied from the ozone supply pipe so as to reach the other side of the processing area, so that the speed of the ozone is increased. Further, since ozone is ejected at a high speed, the flow rate of ozone per unit area is large, and the flow rate of ozone becomes large. Therefore, ozone is supplied from the ozone supply pipe at high speed and at a large flow rate. Also, since at least one side of the processing area of the processing chamber has a non-processing area,
Even when the ozone has a large flow rate, the inside of the processing chamber can be maintained at a low pressure. Therefore, the ozone that has reached the other side of the processing region is uniformly supplied to the processing region by the exhaust unit. Then, when ozone treatment is performed on the object to be processed, gas in the processing chamber is sucked by the exhaust unit and exhausted to the outside of the processing chamber via the exhaust port.

[0011] The ozone supply pipe and the exhaust port are disposed in a non-processing area located at a lower portion of the processing chamber, for example. Providing only one ozone supply pipe in the processing chamber simplifies the structure of the processing apparatus. In addition, when the ozone supply pipe is disposed at a position facing the exhaust unit in the non-processing region, exhaust conductance in the processing chamber is improved.

[0012] The ozone supply pipe has, for example, an ozone introduction portion which is bent and bent so that a tip portion thereof is directed toward the processing region, and heads toward the processing region. And
When the length of the ozone introduction section is set to be 1 to 100 times the inner diameter of the ozone introduction section, the activity of ozone is less likely to be lost, and ozone is uniformly supplied to the processing region. The tip portion of the ozone supply pipe is bent upward, for example.

[0013] The ozone supply means has an ozone generating section composed of a plasma generator. When an ozone-generating gas supply pipe for supplying, for example, oxygen gas and nitrogen gas is connected to the ozone generation unit, the generation efficiency of ozone generated in the ozone generation unit is improved.

[0014] For example, a heat treatment apparatus in which the object to be treated is thermally oxidized by subjecting the object to be treated with ozone by maintaining the treatment chamber under a heated and reduced pressure atmosphere, for example, to form a thin film on the object to be treated. It consists of. In this case, for example, ozone supplied to the object to be processed thermally decomposes. Oxygen atom radicals generated by the thermal decomposition cause an oxidation reaction on the surface of the object, and a thin film is formed on the object.

An ozone treatment method according to a second aspect of the present invention is an ozone treatment method for treating an object to be treated with ozone, wherein the treatment area of the treatment chamber having a treatment area for treating the object with ozone is treated. Ozone is supplied from an ozone supply pipe arranged in one non-processing area to reach the other side of the processing area, and the processing is performed from an exhaust port provided in one non-processing area of the processing area. By exhausting indoor gas, ozone reaching the other side of the processing region is supplied to the processing region.

In this configuration, ozone is supplied from the ozone supply pipe so as to reach the other side of the processing area, so that ozone is supplied at high speed and at a large flow rate into the processing chamber. Also,
Ozone arriving at the other side of the processing region is uniformly supplied to the processing region by the exhaust means. Then, when ozone treatment is performed on the object to be processed, gas in the processing chamber is sucked by the exhaust unit and exhausted to the outside of the processing chamber via the exhaust port.

When the ozone supplied from the ozone supply pipe flows as a high-speed viscous flow and is supplied into the processing chamber at a temperature and a pressure capable of maintaining the active state of the ozone, the ozone reaches the other side of the processing area at a high speed. Ozone can be uniformly supplied to the object to be processed while maintaining the active state of ozone.

The processing chamber is maintained at a predetermined temperature and a predetermined pressure, ozone is supplied to the object to be processed, the object is thermally oxidized, and a thin film is formed on the object. In this case, for example, ozone supplied to the object to be processed thermally decomposes. Oxygen atom radicals generated by the thermal decomposition cause an oxidation reaction on the surface of the object, and a thin film is formed on the object.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an ozone treatment apparatus and an ozone treatment method according to an embodiment of the present invention are subjected to thermal oxidation treatment of ozone using a batch type vertical heat treatment apparatus shown in FIG. An example in which a silicon oxide film is formed on a (8 inch) semiconductor wafer (workpiece) will be described.

As shown in FIG. 1, the heat treatment apparatus 1 includes a reaction tube 2 formed in a cylindrical shape with a ceiling whose longitudinal direction is directed vertically. The reaction tube 2 is formed of a heat-resistant material, for example, quartz.

A manifold 3 made of stainless steel (SUS) formed in a cylindrical shape is arranged below the reaction tube 2. The manifold 3 is connected to the lower end of the reaction tube 2 so as to be airtight.

A lid 4 is disposed below the manifold 3, and the lid 4 is configured to be vertically movable by a boat elevator (not shown).
Is closed on the lower side. The reaction tube 2, the manifold 3, and the lid 4 constitute a processing chamber 3 a.

A wafer boat 5 made of, for example, quartz is placed on the lid 4. A plurality of objects to be processed, for example, semiconductor wafers 6, are accommodated in the wafer boat 5 at predetermined intervals in the vertical direction. The semiconductor wafer 6 accommodated in the wafer boat 5 is arranged inside the processing chamber 3a by inserting the wafer boat 5 into the reaction tube 2, and the area where the semiconductor wafer 6 is arranged in the processing chamber 3a. The processing area 3b is configured. Processing area 3
The periphery of b constitutes a non-processing area.

The reaction tube 2 has a wafer boat 5 inside the reaction tube 2.
Are formed so as to have a gap (gap) D between the inner wall (inner wall) of the reaction tube 2 and the end of the wafer boat 5 (semiconductor wafer 6). The space D is, for example, 20 mm to 50 mm in consideration of the flow rate of ozone, the pressure inside the reaction tube 2, the height of the reaction tube 2, and the like so that a predetermined exhaust conductance can be obtained in the processing chamber 3 a.
It is set to the size of about.

Around the reaction tube 2, a heater 7, for example, composed of a resistance heating element, is provided so as to surround the reaction tube 2.

An ozone supply pipe 8 is arranged on one side of the processing area 3b in the processing chamber 3a, for example, on the lower non-processing area 3c. In the present embodiment, an ozone supply pipe 8 is inserted through a side surface of the manifold 3. The ozone supply pipe 8 is formed in a bent shape such that a tip portion 8a is bent toward the processing region 3b (upward), and has an ozone introduction portion 8b at the tip portion 8a toward the processing region 3b. are doing. Therefore, the ozone supply pipe 8
The ozone supplied from the (ozone introduction unit 8b) is ejected above the reaction tube 2.

The leading end portion 8a is provided with a processing chamber 3a with respect to the flow rate of ozone so that the activated state of ozone can be maintained.
It is formed in such a shape that the temperature, pressure, and flow rate inside are optimized. The inner diameter of the ozone introduction part 8b of the tip part 8a is:
For example, it is formed in a range of 2 mm to 20 mm. The length L of the ozone introduction part 8b is, for example, 20 mm to 1000 m.
m. Further, the length L of the ozone introduction section 8b is formed to be 1 to 100 times, preferably 10 to 40 times the inner diameter of the ozone introduction section 8b. Specifically, when the inner diameter of the ozone introduction part 8b is 10 mm, the length L of the ozone introduction part 8b is formed to be 10 mm to 1000 mm, preferably 100 mm to 400 mm. Further, the tip portion 8a is configured such that the ozone supplied upward from the ozone supply pipe 8 passes through the outside of the processing region 3b (for example, the space formed by the gap D shown in FIG. 1) and the other side of the processing region 3b ( (Above the reaction tube 2).

The ozone supply pipe 8 is connected to an ozone generator 9. The ozone generator 9 is composed of, for example, a plasma generator or the like, and generates ozone based on oxygen. An oxygen gas supply pipe 11 and a nitrogen gas supply pipe 12 are connected to the ozone generator 9 via a purifier 10. The oxygen gas from the oxygen gas supply pipe 11 and the nitrogen gas from the nitrogen gas supply pipe 12
The pure water is supplied to the ozone generator 9 by the purifier 10 under the condition of a purity suitable for generating ozone (suppression of generation of corrosive gas due to impurities, particularly moisture).

An exhaust port 13 is provided on the side of the manifold 3 in the non-processing area 3c on one side of the processing area 3b. The exhaust port 13 is provided to face the ozone supply pipe 8 in the non-processing region 3c, and exhausts gas in the reaction tube 2.

An exhaust pipe 14 is hermetically connected to the exhaust port 13. The exhaust pipe 14 is provided with a combination valve 15 and a vacuum pump 16 from the upstream side. The combination valve 15 adjusts the opening degree of the exhaust pipe 14 to control the pressure in the reaction pipe 2 and the pressure in the exhaust pipe 14 to a predetermined pressure. The vacuum pump 16 is connected to the exhaust pipe 14.
The gas in the reaction tube 2 is evacuated via the, and the pressures in the reaction tube 2 and the exhaust tube 15 are adjusted.

A purge gas supply pipe 17 for supplying a purge gas, for example, a nitrogen gas, is inserted below the exhaust port 13 on the side surface of the manifold 3. Also, the ozone generator 9,
Purifire 10, oxygen gas supply pipe 11, nitrogen gas supply pipe 12, combination valve 15, vacuum pump 1
A control unit (not shown) is connected to the purge gas supply pipe 6 and the purge gas supply pipe 17. The control unit includes a microprocessor, a process controller, and the like, measures the temperature, pressure, and the like of each unit of the heat treatment apparatus 1 and outputs a control signal or the like to each of the above units based on the measurement data. Control.

Next, an ozone treatment method using the heat treatment apparatus 1 having the above configuration will be described with reference to a case where a silicon oxide film is formed on the semiconductor wafer 6 as an example. In the following description, the operation of each part constituting the heat treatment apparatus 1 is as follows.
It is controlled by a control unit (not shown).

First, with the lid 4 lowered, the wafer boat 5 containing the semiconductor wafer 6 is placed on the lid 4. Further, the reaction tube 2 (the processing chamber 3
a) is heated to a predetermined temperature, for example, 300 ° C. to 1000 ° C., preferably 600 ° C. to 900 ° C.

Next, the lid 4 is raised by a boat elevator (not shown), and the wafer boat 5 (semiconductor wafer 6)
Is loaded into the processing chamber 3a. Thus, the semiconductor wafer 6 is accommodated in the processing chamber 3a and the processing chamber 3a is sealed.

After the processing chamber 3a is sealed, the pressure in the processing chamber 3a is reduced. Specifically, while controlling the opening of the combination valve 15, the vacuum pump 16 is driven to discharge the gas in the processing chamber 3a. The gas in the processing chamber 3a is discharged when the pressure in the processing chamber 3a is changed from a normal pressure to a predetermined pressure, for example, 6.65 Pa to 399 Pa (0.05 Torr).
r to 3 Torr). And the processing chamber 3a
The pressure inside is 6.65 Pa to 399 Pa (0.05 Torr).
r to 3 Torr).

The pressure in the processing chamber 3a is 6.65 Pa to 39.
When the pressure is maintained at 9 Pa (0.05 Torr to 3 Torr), ozone is supplied into the reaction tube 2 from the ozone supply tube 8 to reach the ceiling of the reaction tube 2 (upper part of the wafer boat 5). In order for ozone to reach the ceiling of the reaction tube 2,
Since the speed of the ozone supplied from the ozone supply pipe 8 increases, the flow rate of the ozone per unit area increases. Therefore, ozone is supplied from the ozone supply pipe 8 at a high speed and at a large flow rate. Ozone is a predetermined amount, for example, 1 liter / m
in to 30 liters / min, preferably 5 liters / min
min to 10 liter / min.

The tip 8a of the ozone supply pipe 8 is
Since the temperature, pressure, and flow rate in the processing chamber 3a are optimized to the flow rate of ozone, ozone is supplied to the ceiling of the reaction tube 2 through the outside of the processing area 3b, The supplied ozone concentration is, for example, 1 to 14 vo.
Supplied while maintaining 1%.

In general, when the inner diameter of the ozone introducing portion 8b becomes smaller, the pressure in the tip portion 8a (the ozone introducing portion 8b) increases, and it becomes difficult to maintain the active state of ozone. Conversely, when the inner diameter of the ozone introduction portion 8b is increased, the flow rate of ozone is reduced, and the ozone ejected from the ozone supply pipe 8 is easily supplied to the ceiling of the reaction tube 2. In addition, when the length L of the ozone introduction portion 8b is reduced, it becomes difficult for ozone to flow as a high-speed viscous flow. Conversely, if the length L of the ozone introduction section 8b is increased, it becomes difficult to maintain the active state of ozone. For this reason, the inside diameter and length of the ozone introduction unit 8b were changed to examine a shape that optimizes the temperature, pressure, and flow velocity in the processing chamber 3a.
m to 20 mm, and the length L of the ozone introduction part 8b is set to 20 mm to
It was confirmed that it is preferable to set the thickness to 1000 mm.

Further, when the relationship between the inner diameter and the length of the ozone introduction section 8b was examined, the length of the ozone introduction section 8b was set to 1 to 100 times, preferably 10 to 40 times the inner diameter of the ozone introduction section 8b. It was confirmed that, by setting the length, ozone was particularly supplied to the ceiling of the reaction tube 2 through the outside of the processing region 3b, and the activity of ozone was hardly lost.

Since the nitrogen gas is supplied to the ozone generator 9 connected to the ozone supply pipe 8 in addition to the oxygen gas, the generation efficiency of the ozone generated by the ozone generator 9 is improved.

Ozone arriving at the ceiling of the reaction tube 2 is supplied to the processing region 3b by suction from the vacuum pump 16. Here, the pressure in the processing chamber 3a is 6.65 Pa to 3 Pa.
The reason why the pressure is maintained at a low pressure such as 99 Pa (0.05 Torr to 3 Torr) is that once the ozone reaches the ceiling of the reaction tube 2, the flow rate of the ozone becomes slow,
This is because the influence of the flow rate of ozone is reduced. Since the reaction tube 2 is provided with a gap D between the inner wall of the reaction tube 2 and the end of the semiconductor wafer 6, the processing chamber 3a
A predetermined exhaust conductance that can maintain the inside at a low pressure is obtained, and ozone can be uniformly supplied to the processing region 3b. Further, since the exhaust port 13 is arranged so as to face the ozone supply pipe 8, the ozone supplied from the ozone supply pipe 8 is hardly affected when ozone is supplied to the processing region 3b. The exhaust conductance in 3a is improved, and ozone can be more uniformly supplied to the processing region 3b.

When ozone is supplied to the processing region 3b, oxygen atom radicals generated by the thermal decomposition of ozone cause an oxidation reaction on the surface of the semiconductor wafer 6, and the semiconductor wafer 6
A silicon oxide film is formed thereon. The reaction product generated by the ozone treatment is sucked into the exhaust pipe 14 via the exhaust port 13 and exhausted to the outside of the reaction pipe 2.

When the silicon oxide film is formed on the surface of the semiconductor wafer 6, the supply of ozone from the ozone supply pipe 8 is stopped. Then, while controlling the opening degree of the combination valve 15, the vacuum pump 16 is driven so that the processing chamber 3a
After exhausting the gas inside, the nitrogen gas is supplied from the purge gas supply pipe 17, and the gas in the processing chamber 3 a is exhausted to the exhaust pipe 14. In order to reliably discharge the gas in the processing chamber 3a, it is preferable to repeat the discharge of the gas in the processing chamber 3a and the supply of the nitrogen gas a plurality of times.

Finally, the inside of the processing chamber 3a is returned to normal pressure by supplying nitrogen gas from the purge gas supply pipe 17, and the wafer boat 5 (semiconductor wafer 6) is unloaded from the processing chamber 3a.

As described above, according to the present embodiment, ozone is supplied from the ozone supply pipe 8 so as to reach the ceiling of the reaction tube 2, so that ozone is supplied at high speed and at a large flow rate. . Moreover, since ozone reaches the ceiling of the reaction tube 2, ozone can be uniformly supplied to the processing region 3b. Further, since the space D is provided in the reaction tube 2, ozone can be uniformly supplied to the processing region 3b. In addition, since the exhaust port 13 is disposed so as to face the ozone supply pipe 8, ozone can be more uniformly supplied to the processing region 3b. Therefore, a silicon oxide film is uniformly formed on the semiconductor wafer 6.

According to the present embodiment, the tip portion 8a is
Since the temperature, pressure, and flow rate in the processing chamber 3a are formed to be optimal with respect to the flow rate of ozone, the pressure and temperature inside the distal end portion 8a are unlikely to increase. Also,
Even if the pressure and temperature increase, the time during which ozone is exposed to high pressure and high temperature can be shortened. Therefore, the activity of ozone in the ozone supply pipe 8 is less likely to be lost.

According to the present embodiment, since the nitrogen gas is supplied to the ozone generator 9 in addition to the oxygen gas, the generation efficiency of the ozone generated by the ozone generator 9 is improved. According to the present embodiment, since only one ozone supply pipe 8 is provided, the structure of the heat treatment apparatus 1 can be simplified.

The present invention is not limited to the above embodiment. For example, an object to be processed in which a silicon nitride film is formed on a semiconductor wafer 6 in advance may be used. In this case, a stacked film of a silicon oxide film and a silicon nitride film or a silicon oxynitride film can be formed on the semiconductor wafer 6.

The present invention is not limited to the case where the present invention is used in a film forming step for forming a silicon oxide film on the semiconductor wafer 6, but includes, for example, an ashing step for decomposing and removing organic substances deposited on the surface of the thin film. May be used. In this case, for example, SOG formed on a silicon oxide film
(Spin On Glass) When removing the organic matter deposited on the surface of the film, the flow rate of the ozone treatment is increased and the S
A uniform ozone treatment can be performed on the entire surface of the OG film.
Further, the present invention may be used in an annealing step.

The ozone generator 9 is not limited to the one supplied with oxygen gas and nitrogen gas. For example, only the oxygen gas supply pipe 11 may be connected to the purifier 10 and only the oxygen gas may be supplied to the ozone generator 9. Also in this case, ozone can be generated by the ozone generator 9.

The number of ozone supply pipes 8 is not limited to one, but may be plural. The object to be processed is not limited to the semiconductor wafer 6, but may be, for example, a glass substrate.

[0052]

As described above, according to the present invention,
The flow rate of ozone can be increased, and uniform ozone treatment can be performed on the entire surface of the object. Further, according to the present invention, the flow rate of ozone can be increased, and the pressure in the reaction tube can be kept low. Further, according to the present invention, the active state of ozone can be maintained.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic view of a conventional heat treatment apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat treatment apparatus 2 Reaction tube 3 Manifold 3a Processing chamber 3b Processing area 3c Non-processing area 4 Lid 6 Semiconductor wafer 8 Ozone supply pipe 8a Tip part 8b Ozone introduction part 9 Ozone generator 11 Oxygen gas supply pipe 12 Nitrogen gas supply pipe 13 Exhaust port 14 Exhaust pipe 15 Combination valve 16 Vacuum pump

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takanori Asano 1-24-1, Machiya, Shiroyamacho, Tsukui-gun, Kanagawa Prefecture Inside the Sagami Office of Tokyo Electron Tohoku Co., Ltd. (72) Hiroyuki Yamamoto Shiroyamacho, Tsukui-gun, Kanagawa Prefecture 1-2-1 Machiya Tokyo Electron Tohoku Co., Ltd. Sagami Office F-term (reference) 4G075 AA22 BA06 BD14 CA51 CA62 DA02 EB01 FB01 FC13 5F004 AA01 BB19 BB28 BC01 BC03 BC07 BD01 CA02 CA04 CA05 DA27 DB26 5F045 AA08 AB32 AC11 AC AD11 AD12 AE17 AE19 AE21 BB01 DP19 DQ05 EB02 EF02 EG02 EN01 GB15 5F058 BC02 BD04 BF55 BF60 BF62 BG01 BG02 BJ01

Claims (10)

[Claims] An ozone treatment apparatus for ozone-treating an object to be processed, comprising: a processing chamber having a processing region for ozone-treating the object to be processed, and having at least one non-processing region on one side of the processing region; At least one ozone supply pipe that is disposed in a non-processing area on one side of the processing area and that supplies ozone into the processing chamber so as to reach the other side of the processing area from the non-processing area; An ozone supply means connected to the processing chamber; an exhaust port provided in a non-processing area on one side of the processing area to exhaust gas in the processing chamber; and an exhaust port connected to the exhaust port to exhaust gas in the processing chamber. And an exhaust unit that supplies the ozone reaching the other side of the processing region to the processing region. 2. The ozone supply pipe and the exhaust port are disposed in a non-processing area located below the processing chamber.
The ozone treatment apparatus according to claim 1, wherein: 3. The processing chamber, wherein one of the ozone supply pipes is provided, and the ozone supply pipe and the exhaust port are arranged in a non-processing area at a position facing the exhaust port. 3. The ozone treatment apparatus according to 1 or 2. 4. The ozone supply pipe has an ozone introduction portion which is bent so that a tip portion thereof is directed toward the processing region and is directed toward the processing region, and the length of the ozone introduction portion is the ozone introduction portion. The ozone treatment apparatus according to any one of claims 1 to 3, wherein the ozone treatment apparatus is formed to be 1 to 100 times the inner diameter of the introduction section. 5. The ozone treatment apparatus according to claim 4, wherein said tip portion of said ozone supply pipe is bent upward. 6. The ozone supply means has an ozone generation section composed of a plasma generator, and the ozone generation section is connected to an ozone generation gas supply pipe for supplying oxygen gas and nitrogen gas. The ozone treatment apparatus according to any one of claims 1 to 5, wherein: 7. A heat treatment apparatus for maintaining the inside of the processing chamber under a heated and reduced pressure atmosphere and subjecting the object to be processed to ozone treatment to thermally oxidize the object to form a thin film on the object to be processed. The ozone treatment apparatus according to any one of claims 1 to 6, wherein: 8. An ozone treatment method for treating an object to be treated with ozone, comprising: supplying ozone disposed in a non-treatment area on one side of the treatment area in a treatment chamber having a treatment area for treating the object to be treated with ozone. By supplying ozone from a pipe so as to reach the other side of the processing area, exhausting gas in the processing chamber from an exhaust port provided in a non-processing area on one side of the processing area, Supplying the ozone reaching the other side to the processing region. 9. The method according to claim 8, wherein the ozone supplied from the ozone supply pipe flows as a high-speed viscous flow and is supplied into the processing chamber at a temperature and a pressure capable of maintaining an active state of the ozone. The ozone treatment method described. 10. A processing chamber is maintained at a predetermined temperature and a predetermined pressure, and ozone is supplied to the processing object to thermally oxidize the processing object to form a thin film on the processing object. The ozone treatment method according to claim 8 or 9, wherein: