JP2001196364A - Method and device for heat treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and a device for heat treatment, with which a uniform thin film can be formed on an object to be treated. SOLUTION: A heat treatment device 1 is provided with a reaction chamber 2 composed of an inner pipe 3 and an outer pipe 4, a gas feed pipe 13 for feeding a reaction gas into the inner pipe 3 and an exhaust pipe 15 for exhausting a gas inside the reaction chamber 2. The inner pipe 3 is provided with an opening part 3a for communicating a space S1 inside the inner pipe 3 and a space S2 formed between the inner pipe 3 and the outer pipe 4. When the reaction gas is fed from the gas feed pipe 13 into the inner pipe 3, a reaction product is supplied to a treatment area 3b by a control part 18, and an intermediate product is exhausted through the opening part 3a to the exhaust pipe 15.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment method and a heat treatment apparatus, and more particularly, to a heat treatment method and a heat treatment apparatus for forming a thin film having a uniform thickness on an object to be processed.

[0002]

2. Description of the Related Art In a process of manufacturing a semiconductor device, a thin film is formed on an object to be processed by, for example, a CVD (Chemical Vapor Deposition) process. In the process of forming a thin film on an object to be processed, for example, a semiconductor wafer, for example, a heat treatment apparatus as shown in FIG. 4 is used. The formation of a thin film using the heat treatment apparatus 51 shown in FIG. 4 is performed as follows.

[0003] First, a reaction tube 52 having a double tube structure including an inner tube 52a and an outer tube 52b is heated to a predetermined temperature by a heater 53. Next, a wafer boat 55 accommodating a plurality of semiconductor wafers 54 is loaded into the reaction tube 52 (the inner tube 52a). Subsequently, the gas in the reaction tube 52 is exhausted from the exhaust port 56, and the pressure inside the reaction tube 52 is reduced to a predetermined pressure.
When the pressure in the reaction tube 52 is reduced to a predetermined pressure, a reaction gas is supplied from the gas supply tube 57 into the inner tube 52a. And
A reactive gas is supplied to the surface of the semiconductor wafer 54 to form a thin film on the semiconductor wafer 54.

In the process of forming a thin film on a semiconductor wafer,
It is important to form a thin film having a uniform thickness on the semiconductor wafer 54. Generally, in order to improve the uniformity of the thin film, it is preferable to reduce the pressure in the reaction tube 52.

[0005]

However, in order to reduce the pressure in the reaction tube 52, it is necessary to reduce the flow rate of the reaction gas supplied into the reaction tube 52, and the efficiency of the film forming process is low. There was a problem of becoming. This is due to the influence of the exhaust conductance in the reaction tube 52. If the exhaust conductance can be improved, the pressure in the reaction tube 52 can be maintained at a low pressure without reducing the flow rate of the reaction gas.

[0006] In the case of the heat treatment apparatus 51 shown in FIG. 4, the reaction gas flows upward from below between the inner wall of the inner tube 52 a and the side surface of the semiconductor wafer 54 in the reaction tube 52. It is turned back at the upper end, and flows downward between the outer wall of the inner pipe 52a and the inner wall of the outer pipe 52b to be exhausted from the exhaust port 56. In order to improve the exhaust conductance in the reaction tube 52, it is necessary to increase the clearance between the inner wall of the inner tube 52a and the side surface of the semiconductor wafer 54 and the clearance between the outer wall of the inner tube 52a and the inner wall of the outer tube 52b. . However, this causes a new problem that the size of the reaction tube 52 must be increased.

A high dielectric film is formed on the semiconductor wafer 54.
For example, tantalum oxide (Ta₂O₅) When forming a film,
As the reaction gas, for example, pentaethoxy tantalum (Ta
(OC ₂H₅)₅) Is used. The reaction gas is pentae
For polymers such as toxic tantalum, thermal decomposition
For example, an ethoxy group (OC₂H₅) Seems to have missed one
Intermediates such as Ta (OC₂H₅)₄)Generate a
This intermediate product is sequentially decomposed (higher order reaction)
Produces tantalum oxide. And the generated oxidation
Tantalum is deposited on the semiconductor wafer 54 to form a semiconductor wafer.
A tantalum oxide film is formed on c.

Generally, an intermediate product produced by a thermal decomposition reaction has a large molecular weight and is hardly diffused in the reaction tube 52. For this reason, when an intermediate product is deposited on the semiconductor wafer 54 to form a thin film, it is difficult to uniformly control the in-plane film thickness distribution of the thin film.

Further, since the intermediate product contains an ethoxy group, the possibility that carbon (C) is mixed in the thin film formed by depositing the intermediate product on the semiconductor wafer 54 is increased. When carbon is mixed in the thin film (the carbon is contaminated in the thin film), there is a problem that a leak current is generated and insulation resistance is reduced.

By the way, Japanese Patent Laid-Open No. 5-1 previously disclosed.
No. 09626 discloses that the gas supply nozzle tip is provided near the inner wall at the center in the longitudinal direction of the inner core tube and an exhaust port is provided in a manifold below the inner core tube to reduce the difference in gas concentration in the inner core tube. It is disclosed that the film becomes smaller and can be uniformly formed. However, in Japanese Patent Laid-Open No. Hei 5-109626, a new exhaust port different from the conventional exhaust port is provided in the manifold, so that the structure of the heat treatment apparatus becomes complicated. Further, the manifold is generally formed of stainless steel (SUS), and forming an exhaust port at a position below the inner core tube increases the manufacturing cost of the manifold. Further, in Japanese Patent Application Laid-Open No. Hei 5-109626, the difference in the reaction gas concentration is reduced by simply shortening the moving distance of the reaction gas. For example, a reaction gas in which an intermediate product is generated by the above-mentioned thermal decomposition reaction is described. When the is used, an intermediate product generated by the thermal decomposition reaction is deposited on the semiconductor wafer 54. This makes it difficult to uniformly control the in-plane film thickness distribution of the formed thin film.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a heat treatment method and a heat treatment apparatus capable of performing a uniform heat treatment on an object to be processed.
Another object of the present invention is to provide a heat treatment method and a heat treatment apparatus capable of forming a uniform thin film on a target object.

[0012]

In order to achieve the above object, a heat treatment method according to a first aspect of the present invention has a processing region for processing an object to be processed and a non-processing region adjacent to the processing region. Heating a reaction chamber composed of an inner pipe having an inner pipe and an outer pipe formed so as to cover the inner pipe, and supplying a reaction gas into the processing area from a gas supply pipe arranged in the non-processing area. A heat treatment method for heat-treating the object to be processed, wherein a treatment component contributing to heat treatment in the reaction gas is supplied from the gas supply pipe to the treatment region, and a non-treatment component not contributing to heat treatment in the reaction gas. Is exhausted out of the reaction chamber through an opening provided in the inner tube located in the non-processing region.

In this configuration, of the reaction gas supplied from the gas supply pipe disposed in the non-processing region, a processing component contributing to the heat treatment is supplied to the processing region to heat-treat the object. In addition, non-processing components that do not contribute to the heat treatment are exhausted to the outside of the reaction chamber through the opening, and are not easily supplied to the processing region. Therefore, a uniform heat treatment can be performed on the object.

The reaction gas produces a higher intermediate product by a higher thermal decomposition reaction, for example, comprising at least a secondary process. When the processing component is composed of the higher intermediate product and the non-processing component is composed of a lower intermediate product generated by the thermal decomposition reaction, the lower intermediate product is exhausted outside the reaction chamber. As a result, it becomes difficult to be supplied to the processing area. Therefore, a uniform thin film can be formed on the object.

It is preferable that the non-processing area is located below the processing area. This is because the intermediate product generated by the thermal decomposition reaction has a large molecular weight, easily moves below the treatment region, and is easily exhausted to the outside of the reaction chamber through the opening.

When the reaction gas is further heated by a heating unit provided near the tip of the gas supply pipe, the thermal decomposition reaction of the reaction gas is promoted, and the amount of non-processed components (for example, intermediate products) is reduced. I do. The reaction gas is composed of, for example, organic tantalum.

A heat treatment apparatus according to a second aspect of the present invention has a processing region for processing an object to be processed, an inner tube having a non-processing region adjacent to the processing region, and an inner tube for covering the inner tube. A reaction chamber composed of a formed outer tube,
A heater for heating the reaction chamber, a gas supply pipe for supplying a reaction gas into the inner pipe, an exhaust pipe for exhausting the gas in the reaction chamber, and a side wall of the inner pipe located in the non-processing region. , And at least one opening communicating with a space in the inner tube and a space formed between the inner tube and the outer tube.

In this configuration, the reaction gas is supplied from the gas supply pipe to the processing region in the inner pipe, and heat-treats the object to be processed.
Further, a part of the gas in the inner tube is exhausted to the outside of the reaction chamber through the opening, and the exhaust conductance in the reaction chamber is improved. Therefore, without reducing the flow rate of the reaction gas,
The pressure in the reaction chamber can be easily maintained at a low pressure, and uniform heat treatment can be performed on the object.

A processing component of the reaction gas that contributes to heat treatment is supplied from the gas supply pipe to the processing region, and a non-processing component of the reaction gas that does not contribute to heat treatment is exhausted to the exhaust pipe through the opening. As described above, when a control unit that controls the flow of gas in the inner pipe is further provided, of the reaction gas supplied from the gas supply pipe arranged in the non-processing area, a processing component contributing to heat treatment is supplied to the processing area. The supplied object is heat-treated. In addition, non-processing components that do not contribute to the heat treatment are exhausted to the outside of the reaction chamber through the opening, and are not easily supplied to the processing region. For this reason,
A uniform thin film can be formed on an object to be processed.

Preferably, the non-processing area is located below the processing area. This is because the intermediate product generated by the thermal decomposition reaction has a large molecular weight, easily moves below the treatment region, and is easily exhausted to the outside of the reaction chamber through the opening. For example, it is preferable that the gas supply pipe is arranged such that the tip thereof is located at a position lower than １ ／ of the height of the inner pipe. Further, it is preferable that the opening is provided at a position lower than 1/4 of the height of the inner tube. For example, it is preferable that the opening is formed of a cutout formed at a lower end of the inner tube.

If a heating section for heating the reaction gas supplied from the gas supply pipe is further provided near the tip of the gas supply pipe, the thermal decomposition reaction of the reaction gas is promoted,
The amount of unprocessed components (eg, intermediate products) is reduced.

In the non-processing region, the opening is
When provided at a position facing the gas supply pipe, non-process components (for example, intermediate products) are easily exhausted to the outside of the reaction chamber. It is preferable that the opening is formed to be smaller than a cross-sectional area of a flow path of a space formed between the inner pipe and the outer pipe.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A heat treatment method and a heat treatment apparatus according to an embodiment of the present invention will be described below with reference to a batch type vertical heat treatment apparatus shown in FIG. The case of forming is described as an example.

As shown in FIG. 1, the heat treatment apparatus 1 includes a substantially cylindrical reaction tube (reaction chamber) 2 whose longitudinal direction is directed vertically. The reaction tube 2 has a substantially cylindrical inner tube 3.
And an outer tube 4 having a ceiling and formed so as to cover the inner tube 3 and to have a certain distance from the inner tube 3. The inner tube 3 and the outer tube 4 are formed of a heat-resistant material, for example, quartz.

At the lower part of the inner tube 3, at least one opening 3a penetrating the inner tube 3 is formed. In the present embodiment, one opening 3a is formed. The opening 3a is formed so as to communicate a space S1 in the inner tube 3 with an annular space S2 formed between the inner tube 3 and the outer tube 4. The opening 3 a improves the exhaust conductance in the reaction tube 2, and has a predetermined area such that the reaction gas is supplied to the upper portion of the inner tube 3, for example, 1 cm ^{2 to} 200 cm.
² are formed. This opening 3a
Is preferably smaller than the cross-sectional area (cross-sectional area in the horizontal direction in FIG. 1) of the flow path of the space S2 formed between the inner pipe 3 and the outer pipe 4. In the present embodiment, It is formed smaller than the cross-sectional area of the flow path in the space S2. Further, the position (height) of the opening 3a is preferably provided at a lower portion of the inner tube 3, for example, at a position lower than １ ／ of the height of the inner tube 3.

Below the outer tube 4, a manifold 5 made of stainless steel (SUS) formed in a cylindrical shape is arranged. The manifold 5 is airtightly connected to the lower end of the outer tube 4. The inner pipe 3 projects from the inner wall of the manifold 5 and is supported by a support ring 6 formed integrally with the manifold 5.

A lid 7 is arranged below the manifold 5, and the lid 7 is configured to be vertically movable by a boat elevator 8. When the lid 7 is lifted by the boat elevator 8, the lower side of the manifold 5 is closed.

A wafer boat 9 made of, for example, quartz is placed on the lid 7. The wafer boat 9 contains a plurality of objects to be processed, for example, semiconductor wafers 10 at predetermined intervals in the vertical direction. The semiconductor wafer 10 accommodated in the wafer boat 9 is arranged inside the reaction tube 2 by inserting the wafer boat 9 into the inner tube 3.
Constitute the processing area 3b. The lower side adjacent to the processing area 3b constitutes the non-processing area 3c.

A heat insulator 11 is provided around the reaction tube 2 so as to surround the reaction tube 2, and on the inner wall surface, the inside of the reaction tube 2 is heated to maintain a predetermined temperature, for example, resistance heating. A heating heater 12 made of a body is provided.

The gas supply pipe 1 is provided on the side of the manifold 5.
3 is inserted. The gas supply pipe 13 is connected to the support ring 6.
The manifold 5 is inserted through the lower side (below the inner tube 3) of the side surface of the manifold 5, and its tip is bent toward the inner tube 3 (upward). The tip of the gas supply pipe 13 has a non-processing area 3.
c (the lower side of the processing area 3 b), for example, the tip of the gas supply pipe 13 is set to 1 / H of the height of the inner pipe 3.
It is preferable to arrange so as to be at a position lower than 4.
The gas supply pipe 13 is disposed at a position facing the opening 3a in the non-processing area 3c. Then, a reaction gas, for example, pentaethoxy tantalum (Ta (OC ₂ H
₅ ) An organic tantalum as in ₅ ) and a carrier gas, for example, oxygen gas, are supplied into the inner tube 3.

An exhaust port 14 is provided on a side surface of the manifold 5. The exhaust port 14 is provided above the support ring 6 and communicates with a space S2 formed between the inner tube 3 and the outer tube 4 in the reaction tube 2. Therefore, the gas supply pipe 1
The reaction gas supplied into the inner pipe 3 from the inner pipe 3 is supplied to the processing region 3b in the inner pipe 3 and then discharged to the exhaust port 14 through the space S2 between the inner pipe 3 and the outer pipe 4. You. In addition, inner pipe 3
Is formed with an opening 3a, the gas supply pipe 13
Of the reaction gas supplied into the inner pipe 3 from the opening 3a
Through the exhaust port 14.

An exhaust pipe 15 is hermetically connected to the exhaust port 14. The exhaust pipe 15 is provided with a valve 1 from its upstream side.
6 and a vacuum pump 17 are interposed. Valve 16
Adjusts the opening degree of the exhaust pipe 15 to control the pressures in the reaction pipe 2 and the exhaust pipe 15 to predetermined pressures. Vacuum pump 1
7 exhausts gas in the reaction tube 2 via the exhaust pipe 15 and adjusts the pressure in the reaction tube 2 and the exhaust pipe 15.

The boat elevator 8, the heater 12 for raising the temperature,
A control unit 18 is connected to the gas supply pipe 13, the valve 16, and the vacuum pump 17. The control unit 18 includes a microprocessor, a process controller, and the like, measures the temperature, the pressure, and the like of each unit of the heat treatment apparatus 1 and outputs a control signal or the like to each unit based on the measurement data.
Each part of the heat treatment apparatus 1 is controlled.

Next, a heat treatment method using the heat treatment apparatus 1 configured as described above will be described by taking as an example a case where a tantalum oxide film is formed on the semiconductor wafer 10. In the following description, the operation of each unit constituting the heat treatment apparatus 1 is controlled by the control unit 18.

First, with the cover 7 lowered, the wafer boat 9 containing the semiconductor wafer 10 is placed on the cover 7. Further, the inside of the reaction tube 2 is heated to a predetermined temperature, for example, 300 ° C. to 800 ° C., and preferably 40 ° C.
Heat to 0 ° C to 600 ° C.

Next, the lid 7 is raised by the boat elevator 8, and the wafer boat 9 (semiconductor wafer 10) is loaded into the reaction tube 2. Thereby, the semiconductor wafer 10 is accommodated in the reaction tube 2 and the reaction tube 2 is sealed.

After the reaction tube 2 is sealed, the pressure inside the reaction tube 2 is reduced. Specifically, the gas in the reaction tube 2 is discharged by driving the vacuum pump 17 while controlling the opening of the valve 16. The gas in the reaction tube 2 is discharged when the pressure in the reaction tube 2 is changed from normal pressure to a predetermined pressure, for example, 1.33 Pa to 133.
The process is performed until the pressure becomes 0 Pa (0.01 Torr to 10 Torr). Then, the pressure in the reaction tube 2 is increased to 1.33 Pa to 13
The pressure is maintained at 30 Pa (0.01 Torr to 10 Torr).

Here, after the space S1 in the inner tube 3 is moved upward in the reaction tube 2, the space S2 formed between the inner tube 3 and the outer tube 4 is moved downward. Thus, a flow of gas discharged to the exhaust port 14 and a flow of gas discharged to the exhaust port 14 through the opening 3a are formed. For this reason,
The exhaust conductance in the reaction tube 2 is improved,
Pressure within the range of 1.33 Pa to 1330 Pa (0.01 To
(rr to 10 Torr).

The pressure in the reaction tube 2 is 1.33 Pa to 133
When the pressure is maintained at 0 Pa (0.01 Torr to 10 Torr), pentaethoxy tantalum as a reaction gas is supplied from the gas supply pipe 13 into the reaction pipe 2 (inner pipe 3) at a predetermined flow rate.
For example, 0.0001 liter / min to 1 liter / m
In addition, oxygen gas as a carrier gas is supplied at a predetermined flow rate, for example, 0.01 liter / min to 10 liter / min.

Since the inside of the reaction tube 2 (the inner tube 3) is heated, the pentaethoxy tantalum supplied into the inner tube 3
A thermal decomposition reaction occurs, for example, an ethoxy group (OC ₂ H ₅ )
Product such as Ta (OC ₂
H _{5) 4,} such as to generate a low order intermediate product). This intermediate product is sequentially decomposed so as to further cause a thermal decomposition reaction, and finally, tantalum oxide (Ta ₂ O ₅ ) is generated.
In the present embodiment, tantalum oxide constitutes a treatment component that contributes to heat treatment in a reaction gas, and an intermediate product constitutes a non-treatment component that does not contribute to heat treatment in a reaction gas.

Here, the reaction gas supplied into the inner tube 3 does not all change to tantalum oxide, but also includes intermediate products. Generally, the intermediate product has a large molecular weight and easily moves below the gas supply pipe 13. For this reason,
Intermediate products near the lower part of the gas supply pipe 13 (unprocessed components)
Is discharged to the exhaust port 14 through the opening 3a. In addition, a reaction product (for example, a higher intermediate product such as tantalum oxide) in the inner tube 3 has a smaller molecular weight than the intermediate product, and is easily moved above the gas supply tube 13. Therefore, the tantalum oxide (processing component) near the upper part of the gas supply pipe 13 moves to the upper part of the gas supply pipe 13 and moves to the processing region 3b.
Supplied to

The opening 3a is formed to be smaller than the cross-sectional area of the flow path of the space S2 formed between the inner pipe 3 and the outer pipe 4, so that the tantalum oxide near the upper part of the gas supply pipe 13 is formed. Is supplied to the processing region 3b and is hardly discharged to the exhaust port 14 through the opening 3a. Further, since the opening 3a is provided at a position facing the gas supply pipe 13, an intermediate product is easily discharged to the exhaust port 14 through the opening 3a. In addition, since the opening 3a and the tip of the gas supply pipe 13 are provided at a position lower than １ ／ of the height of the inner pipe 3, the tantalum oxide passes through the opening 3a and the exhaust port 14a.
Is difficult to be discharged.

When this heat treatment is performed, for example, for several minutes, a tantalum oxide film of, for example, about 10 to 100 Å is formed on the semiconductor wafer 10. If an intermediate product is contained in the tantalum oxide film, the intermediate product is easily deposited on the edge of the semiconductor wafer 10 and is difficult to deposit on the center of the semiconductor wafer 10. Will be different. This is because the intermediate product has a large molecular weight and is hardly diffused in the reaction tube 2, so that the intermediate product remains at the end of the semiconductor wafer 10 and is difficult to reach the center of the semiconductor wafer 10. Further, the intermediate product stays in the lower part of the reaction tube 2 and is hard to reach the upper part of the reaction tube 2, so that the intermediate product is easily deposited on the semiconductor wafer 10 stored below the wafer boat 9, and the thickness of the tantalum oxide film is increased. Is different depending on the position (height) at which the semiconductor wafer 10 is accommodated in the wafer boat 9. Since the tantalum oxide film of this embodiment hardly contains an intermediate product, the in-plane thickness distribution of the tantalum oxide film can be uniformly controlled. Further, carbon is less likely to be mixed into the tantalum oxide film, and there is no possibility that the insulation resistance of the tantalum oxide film is reduced.

When the tantalum oxide film is formed on the semiconductor wafer 10, the supply of pentaethoxy tantalum and oxygen gas from the gas supply pipe 13 is stopped. And valve 1
While controlling the opening of 6, the vacuum pump 17 is driven,
After discharging the gas in the reaction tube 2, nitrogen gas is supplied from the gas supply tube 13, and the gas in the reaction tube 2 is discharged to the exhaust pipe 15. In order to reliably discharge the gas in the reaction tube 2, it is preferable to repeat the discharge of the gas in the reaction tube 2 and the supply of the nitrogen gas a plurality of times.

Finally, nitrogen gas is supplied from the gas supply pipe 13 to return the inside of the reaction pipe 2 to normal pressure. Then, the boat elevator 8 unloads the wafer boat 9 (semiconductor wafer 10) from the reaction tube 2.

As described above, according to the present embodiment, since the opening 3a is provided below the gas supply pipe 13, the exhaust conductance in the reaction pipe 2 is improved, and the inside of the reaction pipe 2 is improved. Pressure can be easily maintained at a low pressure. Therefore, a uniform tantalum oxide film can be formed on the semiconductor wafer 10.

The intermediate product passes through the opening 3a and passes through the exhaust port 1
4 and the reaction product is supplied to the processing area 3b. Further, since the opening 3a is provided at a position facing the gas supply pipe 13, only the reaction product is easily supplied to the processing region 3b. Therefore, the semiconductor wafer 1
0, a uniform tantalum oxide film can be formed.
Further, there is no possibility that the insulation resistance of the tantalum oxide film is reduced.

By merely providing the opening 3a in the inner tube 3 of the conventional heat treatment apparatus, the exhaust conductance in the reaction tube 2 can be improved, and the structure of the heat treatment apparatus 1 does not become complicated. The inner tube 3 is formed of quartz and has an opening 3.
Processing of a is also easy.

The present invention is not limited to the above embodiment. For example, organic tantalum may be pentadimethylamino tantalum (T
a (N (CH ₃ ) ₂ ) ₅ ).

As shown in FIG. 2, a heating section 19 for heating the reaction gas supplied from the gas supply pipe 13 may be arranged near the tip of the gas supply pipe 13. In this case, the thermal decomposition reaction of the reaction gas supplied from the gas supply pipe 13 is promoted, and tantalum oxide is easily generated. Therefore, a uniform tantalum oxide film can be formed on the semiconductor wafer 10. Further, the heating unit 19 may be arranged on, for example, the inner wall of the reaction tube 2.

The thin film formed on the semiconductor wafer 10 is
It is not limited to a tantalum oxide film. For example, half
A silicon nitride film (Si₃N₄Membrane)
In the case of forming, as a reaction gas from the gas supply pipe 13
NH₃Gas, SiH₂Cl ₂Supply a predetermined amount of gas.
As a result, a silicon nitride film is formed on the surface of the semiconductor wafer 10.
It is formed. Also, ozone is supplied from the gas supply pipe 13.
Silicon oxide film (SiO₂Film).

The opening 3a may be formed in the inner tube 3 so that the space S1 in the inner tube 3 communicates with the space S2 formed between the inner tube 3 and the outer tube 4. . Therefore, the position, shape, number, and area of the opening 3a are arbitrary. For example, as shown in FIG. 2, the opening 3a may be formed by a cutout formed at the lower end of the inner tube 3. In this case, the opening 3a is easily formed. Further, the opening 3a can be arranged on an extension of the exhaust pipe 15 (arranged so as to be in line with the exhaust pipe 15), and the exhaust conductance of the reaction tube 2 can be improved.

As shown in FIGS. 3A and 3B,
A plurality of openings 3a may be provided. The size of the opening 3a is preferably smaller than the cross-sectional area of the flow path of the space S2 formed between the inner pipe 3 and the outer pipe 4, but may be larger than this cross-sectional area. In this case, for example, the opening 3a is
The reaction product can be supplied to the processing region 3b by providing the reaction product in the vicinity of the lower end. Further, the position of the opening 3a is not limited to the position facing the gas supply pipe 13.

The gas supply pipe 13 and the opening 3a are
The present invention is not limited to the case where it is provided below the reaction tube 2. For example, the gas supply pipe 13 and the opening 3a may be provided above the reaction tube 2.

[0055]

As described above, according to the present invention,
A uniform heat treatment can be performed on the object. Further, according to the present invention, a thin film having a uniform thickness can be formed on an object to be processed.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a heat treatment apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view of a heat treatment apparatus according to another embodiment.

FIG. 3 is a perspective view showing the shape of an opening according to another embodiment.

FIG. 4 is a schematic sectional view of a conventional heat treatment apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat treatment apparatus 2 Reaction tube 3 Inner tube 3a Opening 3b Processing region 3c Non-processing region 4 Outer tube 10 Semiconductor wafer 12 Heater for heating 13 Gas supply tube 15 Exhaust tube 18 Control unit 19 Heating unit

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuichiro Ohata 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi Prefecture Inside Tokyo Electron Co., Ltd. F term (reference) 4K030 AA11 BA17 BA42 CA04 EA11 FA10 KA04 KA25 5F045 AA04 AB31 AC07 AC08 AC09 AD07 AD08 AD09 AD10 AD11 AD12 AE17 AE19 AE21 AE23 AF03 AF10 BB02 DC63 DP19 DQ05 EC02

Claims (14)

[Claims] An inner tube having a processing region for processing an object to be processed and having a non-processing region adjacent to the processing region;
Heating the reaction chamber composed of an outer tube formed so as to cover the inner tube, and supplying a reaction gas into the processing region from a gas supply tube disposed in the non-processing region to thereby form the object to be processed. A heat treatment method for heat-treating the reaction gas, wherein a processing component contributing to heat treatment in the reaction gas is supplied from the gas supply pipe to the processing region, and a non-processing component not contributing to heat treatment in the reaction gas is supplied to the non-processing region. A heat treatment method, wherein the air is exhausted to the outside of the reaction chamber through an opening provided in the located inner tube. 2. The reaction gas generates a higher intermediate product by a higher-order thermal decomposition reaction comprising at least a secondary process, wherein the processing component is composed of the higher intermediate product, and the non-processing component is 2. is composed of lower intermediate products generated by the thermal decomposition reaction.
3. The heat treatment method according to 1. 3. The heat treatment method according to claim 1, wherein the non-processing region is located below the processing region. 4. The heat treatment method according to claim 1, wherein the reaction gas is further heated by a heating unit provided near a tip of the gas supply pipe. 5. The method according to claim 1, wherein said reaction gas is composed of organic tantalum.
The heat treatment method according to the above item. 6. An inner tube having a processing area for processing an object to be processed and having a non-processing area adjacent to the processing area;
A reaction chamber including an outer tube formed to cover the inner tube; a heater for heating the reaction chamber; a gas supply tube for supplying a reaction gas into the inner tube; An exhaust pipe for exhausting, provided on a side wall of the inner pipe located in the non-processing region,
A heat treatment apparatus, comprising: at least one opening that communicates a space inside the inner tube and a space formed between the inner tube and the outer tube. 7. A processing component that contributes to the heat treatment in the reaction gas is supplied from the gas supply pipe to the processing region, and a non-processing component that does not contribute to the heat treatment in the reaction gas is supplied to the exhaust pipe through the opening. The heat treatment apparatus according to claim 6, further comprising a control unit that controls a gas flow in the inner pipe so that the gas is exhausted. 8. The heat treatment apparatus according to claim 6, wherein the non-processing region is located below the processing region. 9. The heat treatment apparatus according to claim 8, wherein the gas supply pipe is disposed such that a tip thereof is located at a position lower than １ ／ of a height of the inner pipe. 10. The height of the opening is one-fourth of the height of the inner tube.
The heat treatment apparatus according to claim 8, wherein the heat treatment apparatus is provided at a lower position. 11. The heat treatment apparatus according to claim 8, wherein said opening comprises a notch formed at a lower end of said inner tube. 12. A heating unit for heating a reaction gas supplied from the gas supply pipe is provided near a tip of the gas supply pipe.
The heat treatment apparatus according to any one of the preceding claims. 13. The non-processing region, wherein the opening is provided at a position facing the gas supply pipe.
The heat treatment apparatus according to any one of claims 6 to 12, wherein: 14. The apparatus according to claim 6, wherein said opening is formed to be smaller than a sectional area of a flow path of a space formed between said inner tube and said outer tube. The heat treatment apparatus according to claim 1.