JP4607347B2 - Method and apparatus for processing object - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing method and a processing apparatus for an object to be processed. Specifically, the present invention relates to a processing method and a processing apparatus for a target object that removes organic substances attached to the target object.
[0002]
[Prior art]
In a manufacturing process of a semiconductor device, a thin film such as a polysilicon film or a silicon oxide film is widely formed on an object to be processed, for example, a semiconductor wafer, by a process such as CVD (Chemical Vapor Deposition).
[0003]
The process of forming such a thin film is generally performed in a clean room in order to prevent contaminants from adhering to the semiconductor wafer. However, since it is difficult to completely remove contaminants even in a clean room, a small amount of organic matter (contaminant) is contained, and such organic matter may adhere to the semiconductor wafer. When a thin film is formed on a semiconductor wafer with such an organic substance attached thereto, the characteristics of the semiconductor device are deteriorated, resulting in a problem that the yield is deteriorated. For this reason, before the thin film is formed on the semiconductor wafer, the semiconductor wafer is cleaned to remove organic substances attached to the semiconductor wafer.
[0004]
The cleaning of the semiconductor wafer is performed using, for example, a processing apparatus as shown in FIG. First, the semiconductor wafer 53 is placed on the placement unit 52 in the processing apparatus 51. Next, the inside of the processing apparatus 51 (semiconductor wafer 53) is heated to a predetermined temperature by the heater 54 provided in the mounting portion 52. Subsequently, a processing gas such as ozone gas is supplied from the introduction port 55 into the processing apparatus 51. The supplied ozone gas is activated in the processing apparatus 51 (in the vicinity of the semiconductor wafer 53) to generate oxygen atom radicals (O ^* ), and decomposes organic substances adhering to the surface of the semiconductor wafer 53. The decomposed organic matter is discharged out of the processing apparatus 51 through the exhaust port 56, whereby the semiconductor wafer 53 is cleaned.
[0005]
[Problems to be solved by the invention]
However, in the above cleaning method, in order to generate ozone to be supplied to the processing apparatus 51, an ultraviolet irradiation device, a plasma generator, and the like must be provided in the processing apparatus 51, and the structure of the processing apparatus 51 becomes complicated. End up.
[0006]
Further, in order to activate the ozone gas and generate oxygen atom radicals, the inside of the processing apparatus 51 (semiconductor wafer 53) must be heated to a high temperature such as 600 ° C., for example.
[0007]
Further, in the above cleaning method, since the semiconductor wafers 53 are cleaned one by one, when a large number of semiconductor wafers 53 are cleaned, the time required for cleaning becomes long.
[0008]
The present invention has been made in view of the above problems, and an object of the present invention is to provide a processing method and a processing apparatus for a target object that can remove organic substances attached to the target object using a simple apparatus. To do.
[0009]
It is another object of the present invention to provide a processing method and a processing apparatus for a target object that can remove organic substances attached to the target object at a low temperature.
[0010]
Furthermore, an object of this invention is to provide the processing method and processing apparatus of a to-be-processed object which can remove the organic substance adhering to several to-be-processed object in a short time.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, a processing method of an object to be processed according to a first aspect of the present invention is to accommodate an object to be processed to which an organic substance is adhered in a reaction chamber, heat the reaction chamber to a predetermined temperature and perform processing. A method of processing a target object by supplying a gas to remove the organic matter from the target object, wherein the processing gas includes an oxidizing gas and a reducing gas, and the temperature of the reaction chamber is set to 350 to 400. Heating to 0 ° C. activates the oxidizing gas and the reducing gas, and removes organic substances adhering to the object to be processed by the activated oxidizing gas and reducing gas .
[0013]
The oxidizing gas includes, for example , at least one gas selected from the group consisting of N ₂ O and NO. The reducing gas includes, for example , at least one gas selected from the group consisting of N H ₃ and CH ₄ .
[0016]
It is preferable that a plurality of objects to be processed attached with the organic substances are accommodated in the reaction chamber, and the organic substances attached to the plurality of objects to be processed are removed by supplying the processing gas into the reaction chamber. In this case, organic substances attached to a plurality of objects to be processed can be removed by a single treatment, and the time required for removing the organic substances can be shortened.
[0017]
A processing apparatus for an object to be processed according to a second aspect of the present invention includes a heating unit that can be set to a predetermined temperature, a reaction chamber that accommodates the object to be processed, an oxidizing gas and a reducing property in the reaction chamber. A processing gas supply means for supplying a processing gas containing a gas, an exhaust means for exhausting the gas in the reaction chamber, and the heating unit is controlled to heat the temperature of the reaction chamber to 350 to 400 ° C., And a control means for activating the oxidizing gas and the reducing gas, and removing organic substances adhering to the object to be processed by the activated oxidizing gas and reducing gas .
[0019]
The oxidizing gas includes, for example , at least one gas selected from the group consisting of N ₂ O and NO. The reducing gas includes, for example , at least one gas selected from the group consisting of N H ₃ and CH ₄ .
[0022]
The reaction chamber includes a processing object storage unit capable of storing a plurality of the processing objects, and the control unit supplies the processing gas to the processing object storage unit and adheres to the plurality of processing objects. It is preferable to remove organic matter. In this case, organic substances attached to a plurality of objects to be processed can be removed by a single treatment, and the time required for removing the organic substances can be shortened.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the processing method and processing apparatus of the to-be-processed object concerning embodiment of this invention are demonstrated. In the present embodiment, a processing method and a processing apparatus for an object to be processed are decomposed and removed (cleaning) using a batch type vertical heat treatment apparatus shown in FIG. 1 to decompose organic substances adhering to a semiconductor wafer (object to be processed). An example of this will be described.
[0024]
As shown in FIG. 1, the heat treatment apparatus 1 includes a substantially cylindrical reaction tube 2 whose longitudinal direction is oriented in the vertical direction. The reaction tube 2 is composed of an inner tube 3 that forms a film formation region inside, and an outer tube 4 with a ceiling that covers the inner tube 3 and has a certain distance from the inner tube 3. Has a heavy tube structure. The inner tube 3 and the outer tube 4 are made of a heat-resistant material such as quartz.
[0025]
A manifold 5 made of stainless steel (SUS) formed in a cylindrical shape is disposed below the outer tube 4. The manifold 5 is airtightly connected to the lower end of the outer tube 4. The inner tube 3 protrudes from the inner wall of the manifold 5 and is supported by a support ring 6 formed integrally with the manifold 5.
[0026]
A lid body 7 is disposed below the manifold 5, and the lid body 7 is configured to be movable up and down by a boat elevator 8. When the lid body 7 is raised by the boat elevator 8, the lower side of the manifold 5 is closed.
[0027]
A wafer boat 9 made of, for example, quartz is placed on the lid 7. A plurality of objects to be processed, for example, semiconductor wafers 10 are accommodated in the wafer boat 9 at predetermined intervals in the vertical direction.
[0028]
A heat insulator 11 is provided around the reaction tube 2 so as to surround the reaction tube 2, and a heater 12 for temperature increase made of a resistance heating element is provided on the inner wall surface thereof. And the inside of the reaction tube 2 is set to predetermined temperature by driving the heater 12 for temperature rising.
[0029]
A plurality of gas introduction pipes are inserted through the side surface of the manifold 5. In the present embodiment, two gas introduction pipes, a first gas introduction pipe 13 and a second gas introduction pipe 14, are inserted into the side surface of the manifold 5.
[0030]
The first gas introduction pipe 13 is arranged so as to face the inner pipe 3. As shown in FIG. 1, a first gas introduction pipe 13 is inserted from the side surface of the manifold 5 below the support ring 6 (below the inner pipe 3). Then, an oxidizing gas such as oxygen gas (O ₂ ) is introduced into the inner tube 3 from the first gas introduction tube 13.
[0031]
The second gas introduction pipe 14 is disposed so as to face the inner pipe 3, and is inserted into the side surface of the manifold 5 below the support ring 6 (below the inner pipe 3), like the first gas introduction pipe 13. Yes. Then, a reducing gas such as hydrogen gas (H ₂ ) is introduced from the second gas introduction pipe 14 into the inner pipe 3.
[0032]
A discharge port 15 is provided on the side surface of the manifold 5. The discharge port 15 is provided above the support ring 6 and communicates with a space formed between the inner tube 3 and the outer tube 4 in the reaction tube 2. Then, oxygen gas is supplied from the first gas introduction pipe 13 and hydrogen gas is supplied from the second gas introduction pipe 14 into the inner pipe 3 to perform cleaning, and organic substances decomposed by the cleaning are removed from the inner pipe 3 and the outer pipe 4. Is discharged to the discharge port 15. A purge gas supply pipe 16 for supplying nitrogen gas as a purge gas is inserted below the discharge port 15 on the side surface of the manifold 5.
[0033]
An exhaust pipe 17 is airtightly connected to the discharge port 15. A valve 18 and a vacuum pump 19 are interposed in the exhaust pipe 17. The valve 18 adjusts the opening degree of the exhaust pipe 17 to control the pressure in the reaction pipe 2 to a predetermined pressure. The vacuum pump 19 exhausts the gas in the reaction tube 2 through the exhaust tube 17 and adjusts the pressure in the reaction tube 2.
[0034]
A controller 20 is connected to the boat elevator 8, the heater 12, the first gas introduction pipe 13, the second gas introduction pipe 14, the purge gas supply pipe 16, the valve 18, and the vacuum pump 19. The control unit 20 includes a microprocessor, a process controller, and the like, measures the temperature, pressure, and the like of each part of the heat treatment apparatus 1 and outputs a control signal and the like to each of the above parts based on the measurement data. Control each part.
[0035]
Next, a recipe (time) shown in FIG. 2 is used for a processing method for cleaning organic substances adhering to the semiconductor wafer 10 with a processing gas containing oxygen gas and hydrogen gas using the heat treatment apparatus 1 configured as described above. The sequence will be described with reference to FIG. In the following description, the operation of each part constituting the heat treatment apparatus 1 is controlled by the control unit 20.
[0036]
First, in a state where the lid 7 is lowered, the wafer boat 9 in which the semiconductor wafers 10 to which organic substances are attached is accommodated is placed on the lid 7. Further, the inside of the reaction tube 2 is set to a predetermined loading temperature by the heating heater 12.
[0037]
Next, the lid body 7 is raised by the boat elevator 8, and the wafer boat 9 (semiconductor wafer 10) is loaded into the inner tube 3 of the reaction tube 2. Thereby, the semiconductor wafer 10 is accommodated in the reaction tube 2 and the reaction tube 2 is sealed. Further, a predetermined amount of nitrogen gas is supplied from the purge gas supply pipe 16 into the reaction pipe 2 to discharge contaminants such as organic substances mixed in the reaction pipe 2 (loading process).
[0038]
Subsequently, pressure reduction in the reaction tube 2 is started. Specifically, a predetermined amount of nitrogen gas is supplied into the reaction tube 2 from the purge gas supply tube 16 and the vacuum pump 19 is driven while controlling the opening degree of the valve 18 so that the gas in the reaction tube 2 is supplied. Discharge. The gas in the reaction tube 2 is discharged until the pressure in the reaction tube 2 is changed from normal pressure to a predetermined pressure, for example, 133 Pa to 399 Pa (1 Torr to 3 Torr).
[0039]
Further, the inside of the reaction tube 2 is heated to 350 ° C. or higher, which is a temperature at which oxidizing gas (oxygen gas) and reducing gas (hydrogen gas) can be activated, by the heater 12 for raising temperature. This is because when the temperature of the reaction tube 2 is lower than 350 ° C., the oxygen gas and the hydrogen gas are not activated. However, if the temperature of the reaction tube 2 is too high, the surface of the semiconductor wafer 10 is oxidized, so the temperature of the reaction tube 2 is preferably heated to 350 ° C. to 600 ° C., more preferably 350 ° C. to 400 ° C. To do. And this pressure reduction and heating operation are performed until the inside of the reaction tube 2 is stabilized at a predetermined pressure and temperature (stabilization step).
[0040]
When the inside of the reaction tube 2 is stabilized at a predetermined pressure and temperature, the supply of nitrogen gas from the purge gas supply tube 16 is stopped. Then, a predetermined amount of oxygen gas, for example, 1.8 liters / min is supplied from the first gas introduction pipe 13, and a predetermined amount of hydrogen gas, for example, 0.9 liters / min, is reacted from the second gas introduction pipe 14. Supply into the inner tube 3 of the tube 2.
[0041]
When oxygen gas and hydrogen gas are supplied into the reaction tube 2, the oxygen gas and hydrogen gas are activated, and the following hydrogen combustion reaction proceeds in the inner tube 3.
H ₂ + O ₂ → H ^* + HO ₂
H ₂ + OH ^* → H ^* + H ₂ O
O ₂ + H ^* → OH ^* + O ^*
H ₂ + O ^* → H ^* + OH ^*
[0042]
In this way, O ^* (oxygen active species) and OH ^* (hydroxyl active species) are generated during the hydrogen combustion reaction process, and the organic matter adhering to the semiconductor wafer 10 is decomposed by these, thereby the semiconductor wafer 10. Organic substances are removed from (cleaning step). The removed organic matter is sucked into the exhaust pipe 17 through the exhaust port 15 and exhausted outside the reaction pipe 2.
[0043]
Here, since the pressure in the reaction tube 2 is maintained at a low pressure such as 133 Pa to 399 Pa (1 Torr to 3 Torr), O ^* and OH ^* are added to all the semiconductor wafers 10 accommodated in the wafer boat 9. It can be supplied uniformly.
[0044]
When the organic substance is removed from the semiconductor wafer 10, the supply of the processing gas (oxygen gas, hydrogen gas) from the first gas introduction pipe 13 and the second gas introduction pipe 14 is stopped. Then, while controlling the opening degree of the valve 18, the vacuum pump 19 is driven to discharge the gas in the reaction tube 2, and then a predetermined amount of nitrogen gas is supplied from the purge gas supply tube 16, The gas is discharged to the exhaust pipe 17 (purge process). In addition, in order to discharge | emit the gas in the reaction tube 2 reliably, it is preferable to repeat discharge | emission of the gas in the reaction tube 2, and supply of nitrogen gas in multiple times.
[0045]
Finally, a predetermined amount of nitrogen gas is supplied from the purge gas supply pipe 16, the inside of the reaction tube 2 is returned to normal pressure (760 Torr), and the wafer boat 9 (semiconductor wafer 10) is unloaded from the reaction tube 2 (unloading). Process).
[0046]
Next, in order to confirm the effect of the present embodiment, the sample of the semiconductor wafer 10 to which an organic substance was adhered was cleaned under various conditions. As a sample, an oxide film having a thickness of 1000 angstroms is formed on the semiconductor wafer 10, and the surface of the oxide film is washed with diluted hydrofluoric acid (DHF) for 1 minute, and then left in a clean room for a predetermined time to obtain an organic substance. Thus, a semiconductor wafer 10 to which was attached was prepared.
[0047]
Moreover, the adhesion amount of organic substance was measured using the contact angle method. The contact angle method is a method in which pure water is dropped on the semiconductor wafer 10 and the contact angle of the balls (droplets) of this pure water is measured. As the organic substance adheres to the semiconductor wafer 10, the hydrophobicity increases. The contact angle increases. On the contrary, if the amount of organic matter deposited decreases, the hydrophilicity increases and the contact angle decreases.
[0048]
In the present embodiment, the contact angle was measured at five points on the semiconductor wafer 10 and the average value was obtained. The contact angle of the prepared sample was 57 °. Even if pure water is dropped on the semiconductor wafer 10 from which the organic matter has been completely removed, the contact angle of the pure water ball does not become 0 °, and precise measurement at a low angle is difficult. In the semiconductor wafer 10 having a contact angle of 2 ° or less, it is considered that organic substances are almost completely removed.
[0049]
FIG. 3 shows the cleaning conditions. As shown in FIG. 3, the temperature of the reaction tube 2 (Example 1, Example 2, Comparative Example 1, Comparative Example 2), the pressure of the reaction tube 2 (Examples 3 to 5), the cleaning time (implementation) Examples 6 and 7) etc. were changed and these relations were examined. Further, in this example, in order to perform the experiment simply, the case where the semiconductor wafers 10 are accommodated one by one (three in total) in the upper part, the central part, and the lower part of the wafer boat 9 is examined. The average value was used as the contact angle of each example. The influence of the number of semiconductor wafers 10 in the wafer boat 9 is separately examined in the eighth embodiment. The results are shown in FIGS. In FIG. 4, the contact angle after cleaning is shown by a bar graph for each example. For reference, the results are shown in FIGS. 3 and 4 even when the cleaning process is not performed.
[0050]
As shown in Example 1 and Example 2 of FIGS. 3 and 4, it can be confirmed that when the temperature of the reaction tube 2 is 350 ° C. and 400 ° C., the organic substances attached to the semiconductor wafer 10 are almost completely removed. It was. Further, as shown in Comparative Example 1 and Comparative Example 2 in FIGS. 3 and 4, when the temperature of the reaction tube 2 is 300 ° C. and 330 ° C., organic substances attached to the semiconductor wafer 10 are not removed. This is because when the temperature of the reaction tube 2 is lower than 350 ° C., oxygen gas and hydrogen gas are not activated, so that O ^* and OH ^* are not generated, and organic substances cannot be decomposed. Even if the temperature of the reaction tube 2 is higher than 350 ° C., it is possible to remove organic substances attached to the semiconductor wafer 10, but if the temperature of the reaction tube 2 is too high, the surface of the semiconductor wafer 10 is oxidized. Will be. For this reason, it is preferable to make the temperature of the reaction tube 2 into 350 to 600 degreeC, and it is further more preferable to set it as 350 to 400 degreeC.
[0051]
As shown in Example 1 and Example 3 to Example 5 in FIGS. 3 and 4, when the pressure in the reaction tube 2 is 133 Pa to 399 Pa, the organic matter adhering to the semiconductor wafer 10 is almost completely removed. It could be confirmed. If the pressure in the reaction tube 2 exceeds 399 Pa, there is a possibility that O ^* and OH ^* cannot be uniformly supplied to all the semiconductor wafers 10 accommodated in the wafer boat 9. It is preferable to set it as 133Pa-399Pa.
[0052]
As shown in Example 1, Example 6, and Example 7 of FIGS. 3 and 4, it was confirmed that the organic substances adhering to the semiconductor wafer 10 were almost completely removed when the cleaning time was 1 minute to 30 minutes. did it. If the cleaning time is shorter than 1 minute, there is a possibility that the organic matter adhering to the semiconductor wafer 10 cannot be removed almost completely. If the cleaning time is longer than 30 minutes, the semiconductor wafer 10 can be efficiently cleaned. It will disappear. Therefore, the cleaning time is preferably 1 minute to 30 minutes. However, depending on the amount of organic matter adhering to the semiconductor wafer 10, this time can be further extended or shortened.
[0053]
As shown in Example 1 and Example 8 in FIGS. 3 and 4, even if the number of semiconductor wafers 10 in the wafer boat 9 is changed from 3 to 100, the removal of organic substances attached to the semiconductor wafers 10 is affected. It was confirmed that it was not given. This is because the inside of the reaction tube 2 is maintained at a low pressure. For this reason, even if the number of semiconductor wafers 10 in the wafer boat 9 increases to, for example, 100, the pressure of the reaction tube 2 and the cleaning time show the same tendency.
[0054]
In general, the contact angle method is easily influenced by the surface state of the flat surface (semiconductor wafer 10) on which pure water is dropped, and when the surface shape of the semiconductor wafer 10 is changed by cleaning, the amount of organic matter attached is accurately measured. It is thought that it will be impossible. For this reason, the surface shape of the semiconductor wafer 10 before and after cleaning was confirmed. As a result, it was confirmed that the surface shape of the semiconductor wafer 10 hardly changed before and after cleaning.
[0055]
As described above, according to the present embodiment, oxygen gas is supplied from the first gas introduction tube 13 and hydrogen gas is supplied from the second gas introduction tube 14 into the reaction tube 2 heated to 350 ° C. or higher. Thus, the organic matter adhering to the semiconductor wafer 10 can be removed. Therefore, the heat treatment apparatus 1 does not require an ultraviolet irradiation device or a plasma generator as in the conventional cleaning method, and the structure of the heat treatment apparatus 1 can be simplified. In addition, organic substances attached to the semiconductor wafer 10 can be removed with a simple apparatus. Furthermore, organic substances adhering to the semiconductor wafer 10 can be removed at a lower temperature than in the conventional cleaning method.
[0056]
According to the present embodiment, the organic matter adhering to the plurality of semiconductor wafers 10 accommodated in the wafer boat 9 can be removed by one cleaning. For this reason, even when many semiconductor wafers 10 are cleaned, the time required for cleaning can be shortened.
[0057]
In addition, this invention is not limited to said embodiment, A various deformation | transformation and application are possible. Hereinafter, modifications of the above-described embodiment applicable to the present invention will be described.
[0058]
In the above embodiment, the present invention has been described by taking as an example the case where oxygen gas is used as the oxidizing gas and hydrogen gas is used as the reducing gas. However, as the oxidizing gas, for example, O ₂ , N ₂ O, NO At least one gas selected from the group consisting of may be used, and as the reducing gas, for example, at least one gas selected from the group consisting of H ₂ , NH ₃ , and CH ₄ may be used. Even in such a case, it is possible to generate oxygen active species and hydroxyl active species generated in the reducing gas combustion process as described above, and to remove organic substances attached to the semiconductor wafer 10 with a simple apparatus. In addition, organic substances attached to the semiconductor wafer 10 can be removed at a low temperature. In addition, when the above gases other than oxygen gas and hydrogen gas are used as the oxidizing gas and the reducing gas, the temperature of the reaction tube 2 is the same as that when oxygen gas and hydrogen gas are used. By setting the cleaning conditions such as pressure, organic substances attached to the semiconductor wafer 10 can be removed.
[0059]
In the above embodiment, the present invention is described by taking as an example the case of removing the organic matter adhering to the semiconductor wafer 10 using the heat treatment apparatus 1 having the reaction tube 2 having the double tube structure composed of the inner tube 3 and the outer tube 4. However, for example, it may be a heat treatment apparatus having a single tube structure in which the inner tube 3 and the support ring 6 are removed from the heat treatment apparatus 1 shown in FIG. In this case, the structure of the heat treatment apparatus can be simplified, and organic substances attached to the semiconductor wafer 10 can be removed with a simple apparatus.
[0060]
In the above-described embodiment, the present invention has been described by taking as an example the case where the organic matter adhering to the semiconductor wafer 10 is removed using the batch type vertical heat treatment apparatus 1, but for example, even if a single wafer type heat treatment apparatus is used. Good. In this case as well, organic substances attached to the semiconductor wafer 10 can be removed with a simple apparatus. In addition, organic substances attached to the semiconductor wafer 10 can be removed at a low temperature.
[0061]
The number of the first gas introduction pipes 13 and the second gas introduction pipes 14 is not limited to one and may be plural. Further, the object to be processed is not limited to the semiconductor wafer 10 but may be a glass substrate, for example.
[0062]
【The invention's effect】
As described above, according to the present invention, it is possible to remove organic substances attached to the object to be processed using a simple apparatus. Further, according to the present invention, organic substances attached to the object to be processed can be removed at a low temperature. Furthermore, according to the present invention, organic substances attached to a plurality of objects to be processed can be removed in a short time.
[Brief description of the drawings]
FIG. 1 is a schematic view of a heat treatment apparatus according to an embodiment of the present invention.
FIG. 2 is a view showing a recipe for explaining a cleaning procedure according to the embodiment of the present invention.
FIG. 3 is a table showing cleaning conditions according to the embodiment of the present invention.
4 is a graph showing the adhesion amount (contact angle) of organic substances under the cleaning conditions of FIG. 3;
FIG. 5 is a schematic view of a conventional heat treatment apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Reaction tube 9 Wafer boat 10 Semiconductor wafer 12 Heating heater 13 1st gas introduction pipe 14 2nd gas introduction pipe 15 Exhaust port 17 Exhaust pipe 18 Valve 19 Vacuum pump 20 Control part

Claims (6)

A processing method for a target object in which a target object to which an organic substance is attached is accommodated in a reaction chamber, the reaction chamber is heated to a predetermined temperature and a processing gas is supplied to remove the organic substance from the target object. And
The processing gas contains an oxidizing gas and a reducing gas, and the temperature of the reaction chamber is heated to 350 to 400 ° C. to activate the oxidizing gas and the reducing gas to activate the oxidizing gas. And an organic substance adhering to the object to be treated is removed by a reducing gas . The oxidizing gas includes at least one gas selected from the group consisting of N ₂ O and NO, and the reducing gas includes at least one gas selected from the group consisting of N H ₃ and CH _4. The processing method of the to-be-processed object of Claim 1 characterized by these. The reaction chamber contains a plurality of objects to be processed with the organic matter attached thereto, and the organic substances attached to the plurality of objects to be processed are removed by supplying the processing gas into the reaction chamber. The processing method of the to-be-processed object of Claim 1 or 2 . A reaction chamber that has a heating unit that can be set to a predetermined temperature and that accommodates an object to be treated;
A processing gas supply means for supplying a processing gas containing an oxidizing gas and a reducing gas into the reaction chamber;
An exhaust means for exhausting the gas in the reaction chamber;
The temperature of the reaction chamber is controlled to 350 to 400 ° C. by controlling the heating unit to activate the oxidizing gas and the reducing gas, and the treatment target is activated by the activated oxidizing gas and reducing gas. Control means for removing organic matter adhering to the body ;
An apparatus for processing an object to be processed. The oxidizing gas includes at least one gas selected from the group consisting of N ₂ O and NO, and the reducing gas includes at least one gas selected from the group consisting of N H ₃ and CH _4. The processing apparatus of the to-be-processed object of Claim 4 characterized by these. The reaction chamber includes a target object storage unit that can store a plurality of the target objects.
6. The object to be processed according to claim 4 or 5 , wherein the control means supplies the processing gas to the object to be processed container and removes organic substances attached to the plurality of objects to be processed. Processing equipment.

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