TW202009324A - Semiconductor processing device with cleaning function and cleaning method of semiconductor processing device using the same - Google Patents

Abstract

The present invention relates to a cleaning method of a semiconductor process device, including: a chamber providing a substrate processing space therein; a first gas exhaust unit exhausting process gas from the inside of the chamber; a first gas supply unit supplying inert gas into the chamber; a second gas supply unit supplying cleaning gas into the chamber and generating fume in the chamber; and a second gas exhaust unit exhausting the inert gas, the cleaning gas, the fume and mixed gas thereof from the inside of the chamber, wherein the second gas exhaust unit includes an inhalation fan controlling the displacement of the inert gas, the cleaning gas, the fume and the mixed gas thereof.

Description

Semiconductor process equipment with cleaning function and cleaning method thereof

The invention relates to a semiconductor process equipment with a cleaning function and a cleaning method of a semiconductor process equipment using the cleaning function.

Semiconductor process equipment is a device that mounts a substrate on a chuck and processes the substrate through the semiconductor process.

For example, an apparatus for processing a substrate through a semiconductor process may inject process gas into the chamber to perform more than one of plasma evaporation and etching. Generally, in order to etch a thin film formed on a substrate, a chlorine (Cl)-based gas is used as a process gas.

When this chlorine-based gas is used as a process gas and the etching process is repeatedly performed, reaction by-products are generated inside the chamber. The generated reaction by-products are deposited inside the chamber and act as a source of contamination on the substrate in the subsequent process, so a periodic cleaning process inside the chamber for removing it is required.

In general, the chamber cleaning process is accompanied by the process of opening the chamber lid to remove the residual by-products remaining on the inner wall and components of the chamber. During this process, when the chamber cover is opened, smoke (Fume) is generated.

The flue gas may be, for example, hydrogen chloride (HCl) generated by a rapid reaction between chlorine remaining in the chamber and atmospheric gas flowing into the chamber when the chamber lid is opened.

Since the smoke is a harmful component to the human body, the operator opens the chamber cover after wearing a gas mask, etc., and then removes the reaction byproducts deposited inside the chamber. However, the problem with this cleaning process is that workers may inhale harmful substances.

As another method of cleaning the chamber, without opening the lid of the chamber, a cleaning gas that reacts with chlorine is supplied to the inside of the chamber to generate flue gas, and is discharged through a pump connected to the chamber. After that, the operator opens the chamber lid to remove the reaction by-products deposited on the interior of the chamber and the components. However, the problem with this method is that the flue gas is fixed in the form of powder in the pumping pipe connecting the chamber and the pump with a temperature lower than the temperature inside the chamber, so that the performance of the semiconductor process equipment is reduced. Also, there is a problem that when a pump is used, since the emission rate of chlorine is faster than the generation rate of hydrogen chloride, chlorine is directly sucked into the pump, causing corrosion to the components of the pump, resulting in malfunction of the semiconductor process equipment.

Conventional technical literature

Patent Literature

Patent Literature 1 Korean authorized patent 10-0266681 (June 27, 2000)

Patent Literature 2 Korean Patent 10-1078536 (October 25, 2011)

Patent Literature 3 Korean Patent Grant 10-1720620 (March 22, 2017)

An object of the present invention is to provide a semiconductor process equipment having a cleaning function and a cleaning method of a semiconductor process equipment using the cleaning function.

In the semiconductor processing device with a cleaning function of the present invention, the semiconductor processing device with a cleaning function includes: a chamber that provides a substrate processing space inside; a first exhaust portion that discharges process gas from inside the chamber; A first gas supply part that supplies inert gas to the inside of the chamber; a second gas supply part that supplies clean gas to the inside of the chamber to generate smoke inside the chamber; and, a second exhaust part, The inert gas, the cleaning gas, the flue gas, or a mixed gas is discharged from the inside of the chamber, and the mixed gas is mixed with the inert gas, the cleaning gas, and the flue gas.

Wherein, the second exhaust part includes: an exhaust valve connected to the chamber and opening and closing the discharge of the inert gas, the cleaning gas, the flue gas or the mixed gas; and a suction fan, Adjust the discharge amount of the inert gas, the cleaning gas, the flue gas or the mixed gas.

Wherein, the semiconductor process equipment further includes a control part, the control part controls the suction fan, and the control part controls the rotation speed of the suction fan.

Wherein, the semiconductor process equipment further includes a detection device, the detection device is provided in the second exhaust portion, and detects the residual amount of the flue gas, the residual amount of the flue gas detected by the detection device A value is input to the control unit, and the input value is compared with a reference set value to adjust the rotation speed of the suction fan.

Wherein, the semiconductor process equipment further includes a control unit that controls the first exhaust unit, the first air supply unit, the second air supply unit, and the second exhaust unit One or more, the control unit controls one or more of the first exhaust unit, the first air supply unit, the second air supply unit, and the second exhaust unit, or controls the Two or more of the first exhaust portion, the first air supply portion, the second air supply portion, and the second exhaust portion.

Wherein, the semiconductor process equipment further includes a detection device, which is provided in the second exhaust portion and detects the residual amount of the flue gas.

Wherein, the semiconductor process equipment further includes a control unit that inputs the value of the detected residual amount of the flue gas from the detection device, and inputs the detected value from the detection device to the control unit For the value of the residual amount, the control unit controls the driving of the second air supply unit and the second exhaust unit based on the input value.

Wherein, the semiconductor process equipment further includes a heating device, which is disposed on the side of the second gas supply part or the second exhaust part and heats the flue gas.

In the cleaning method of the semiconductor process equipment of the present invention, the semiconductor process equipment including the first exhaust portion, the first air supply portion, the second air supply portion, and the second exhaust portion connected to the chamber is used to remove the existing Flue gas inside the chamber, wherein the cleaning method includes the steps of: supplying an inert gas from the first gas supply section to the inside of the chamber until the inside of the chamber reaches a reference set pressure; After the pressure inside the chamber reaches the reference set pressure, the supply of the inert gas from the first gas supply section is interrupted; the second exhaust section is activated to form a gas flow inside the chamber to Causing the inert gas inside the chamber to be discharged outside the chamber; and, supplying clean gas from the second gas supply section to the inside of the chamber.

Wherein, in the step of supplying the cleaning gas, the cleaning gas replaces the inert gas and keeps the pressure inside the chamber lower than the pressure outside the chamber, thereby moving from the second gas supply to the The cleaning gas continuously flows into the chamber.

First, before the operator performs the operation of opening the cover of the chamber, the smoke is removed, so that the problem that the operator may inhale harmful substances during the cleaning process can be solved.

In addition, the second exhaust portion that emits flue gas is physically distinguished from the first exhaust portion, so that the problem that the flue gas is fixed to the pumping pipe in the form of powder can be solved. This can solve the problems of reduced performance or frequent failures of semiconductor process equipment. In addition, it is possible to solve the problem that the components of the pump are corroded and the semiconductor process equipment fails.

In addition, the suction fan has the effect of being able to adjust the generation and discharge of smoke.

In addition, the control unit has the effect of being able to adjust the generation amount and emission amount of flue gas.

In addition, the detection device and the control unit have the effect of being able to adjust the amount of smoke generated according to the situation.

In addition, the control unit has the effect of being able to adjust the generation amount and emission amount of flue gas.

In addition, the detection device has an effect of being able to objectively determine whether the flue gas is sufficiently removed.

In addition, when the temperature of the flue gas is increased, it has the effect of preventing the flue gas from being fixed in the interior of the chamber in the form of powder.

In addition, a gas flow that discharges inert gas to the second exhaust portion is formed, and clean gas is supplied to the inside of the chamber, thereby preventing smoke from leaking outside the chamber through the second exhaust portion, and preventing the surrounding environment outside the chamber from being polluted .

In addition, by adjusting the pressure of the second exhaust portion and the inside of the chamber, there is an effect that the cleaning gas continuously flows into the inside of the chamber.

Hereinafter, with reference to the drawings, a method for cleaning a semiconductor process apparatus having a cleaning function and a semiconductor process apparatus using a cleaning function according to the present invention will be described in detail.

Generally, in order to etch the thin film formed on the substrate, chlorine (Cl) system (Cl ₂ /Ar, Cl ₂ /N ₂ , Cl ₂ /He, Cl ₂ /BCl ₃ /Ar, BCl ₃ /Ar, BrCl ₃ , SiCl ₄ /Ar, CCl ₂ F ₂ /H ₂ /Ar, etc.) are used as process gases. When the etching process is repeatedly performed using this process gas, reaction by-products are generated inside the chamber. The reaction by-products are deposited inside the chamber and act as a source of contamination on the substrate in the subsequent process, so in order to remove it, the chamber needs to undergo a periodic cleaning process. As a method of cleaning the chamber, there is a method in which the operator opens the chamber cover to clean the inside of the chamber. In this case, when the operator opens the chamber cover, atmospheric gas containing moisture flows into the interior of the chamber, thereby generating smoke (Fume). The flue gas may be hydrogen chloride (HCl) generated by the reaction of chlorine remaining in the chamber with moisture (H ₂ O) in the atmosphere.

The flue gas may be, for example, hydrogen chloride (HCl) generated by a rapid reaction between chlorine remaining in the chamber and atmospheric gas flowing into the chamber when the chamber lid is opened.

Since the smoke is a harmful component to the human body, the operator opens the chamber cover after wearing a gas mask, etc., and then removes the reaction byproducts deposited inside the chamber. However, the problem with this cleaning process is that workers may inhale harmful substances.

As another method of cleaning the chamber, without opening the lid of the chamber, a cleaning gas that reacts with chlorine is supplied to the inside of the chamber to generate flue gas, and is discharged through a pump connected to the chamber. After that, the operator opens the chamber lid to remove the reaction by-products deposited on the interior of the chamber and the components. However, the problem with this method is that the flue gas is fixed in the form of powder in the pumping pipe connecting the chamber and the pump with a temperature lower than the temperature inside the chamber, so that the performance of the semiconductor process equipment is reduced. Also, there is a problem that when a pump is used, since the emission rate of chlorine is faster than the generation rate of hydrogen chloride, chlorine is directly sucked into the pump, causing corrosion to the components of the pump, resulting in malfunction of the semiconductor process equipment.

In order to solve this problem, as shown in FIG. 1, the semiconductor process equipment 100 with a cleaning function according to the present invention includes a chamber 10, a first exhaust portion 20, a first air supply portion 30, a second air supply portion 40 and Second exhaust section 50.

The chamber 10 provides a substrate processing space inside.

The first exhaust section 20 exhausts the process gas G from inside the chamber 10.

At this time, the first exhaust portion 20 may be a pump that keeps the inside of the chamber 10 in a vacuum state and discharges the process gas G.

In addition, the process gas G may be a chlorine (Cl) system (Cl ₂ /Ar, Cl ₂ /N ₂ , Cl ₂ /He, Cl ₂ /BCl ₃ /Ar, BCl ₃ /Ar, etc.) that etch the thin film formed on the substrate BrCl ₃ , SiCl ₄ /Ar, CCl ₂ F ₂ /H ₂ /Ar, etc.).

The first gas supply part 30 supplies the inert gas N into the chamber 10.

At this time, the inert gas N may be a gas such as nitrogen (N ₂ ), argon (Ar), or helium (He) that does not participate in a reaction process such as etching.

The second gas supply part 40 supplies the cleaning gas A to the inside of the chamber 10 to generate flue gas F inside the chamber 10.

At this time, the cleaning gas A may be atmospheric gas containing moisture (H ₂ O).

In addition, the second gas supply part 40 may be a valve provided on the wall of the chamber 10, or may supply the outside of the chamber 10 to the inside of the chamber 10 by opening without a separate connection to a flow path for supplying gas from the outside Atmospheric gas.

The second exhaust portion 50 may discharge inert gas N, cleaning gas A, flue gas F, or a mixed gas mixed with these from the inside of the chamber 10.

According to this configuration, the second exhaust portion 50 that emits the flue gas F is physically distinguished from the first exhaust portion 20.

In addition, even if the lid of the chamber 10 is not opened, the pressure inside the chamber 10 can be adjusted by supplying the inert gas N to the inside of the chamber 10 through the first gas supply portion 30 and supplied into the chamber 10 through the second gas supply portion 40 The cleaning gas A generates flue gas F, and the generated flue gas F is discharged through the second exhaust section 50.

In this way, the flue gas F is removed before the worker performs the operation of opening the lid of the chamber 10, so that it is possible to solve the problem that the worker may inhale harmful substances during the cleaning process.

In addition, the second exhaust portion 50 that emits the flue gas F is physically distinguished from the first exhaust portion 20, so that the problem that the flue gas F is fixed to the pumping pipe in the form of powder can be solved. This can solve the problems of reduced performance or frequent failures of semiconductor process equipment. In addition, it is possible to solve the problem that the semiconductor process equipment malfunctions due to corrosion of the pump components.

The second exhaust part 50 may include an exhaust valve 51 and a suction fan 52.

The exhaust valve 51 may be connected to the chamber 10 to open and close the discharge of the inert gas N, the cleaning gas A, the flue gas F, or the mixed gas mixed with these.

The suction fan 52 can form an air flow in the direction of the exhaust valve 51 inside the chamber 10 and adjust the discharge amount so that the inert gas N, the cleaning gas A, the flue gas F, or the mixed gas mixed with these can be smoothly discharged to the outside.

Unlike the pump, the suction fan 52 can adjust the speed of supplying the cleaning gas A from the second air supply portion 40 to the interior of the chamber 10 by adjusting the rotation speed (RPM, Revolution Per Minute). The rate at which flue gas F is generated by the reaction inside the chamber 10 and the speed at which the flue gas F is discharged from the second exhaust portion 50 inside the chamber 10 can adjust the amount of flue gas F generated and discharged.

Regarding the suction fan 52, when the flue gas F is fixed to the second exhaust portion 50 in the form of powder and the discharge amount is reduced, unlike the pump, the suction fan 52 can adjust the rotation speed so that it can be Decreasing correspondingly increases the rotation speed and increases the emission.

In this way, the suction fan 52 has an effect capable of adjusting the generation amount and the discharge amount of the flue gas F.

Referring to FIG. 2, the semiconductor process apparatus 100 with a cleaning function of the present invention further includes one or more of the first exhaust unit 20, the first air supply unit 30, the second air supply unit 40, and the second exhaust unit 50. Controller 60.

The control unit 60 may control one or more of the first exhaust unit 20, the first air supply unit 30, the second air supply unit 40, and the second exhaust unit 50, respectively, or control the first exhaust unit 20, Two or more of the first air supply unit 30, the second air supply unit 40, and the second exhaust unit 50.

The control part 60 may control the first exhaust part 20 and the first gas supply part 30 so that the first gas supply part 30 is opened in a state where the discharge from the first exhaust part 20 is cut off so that the inert gas N is supplied to the cavity Room 10 interior.

The control part 60 may control the first gas supply part 30 and the second exhaust part 50 so that the inert gas N is supplied to the second exhaust part in a state where a certain amount or more is supplied from the first gas supply part 30 into the chamber 10 50 emissions.

The control unit 60 may control the second exhaust unit 50 and the second air supply unit 40 so that the cleaning gas A is supplied from the second air supply unit 40 to the inside of the chamber 10 in a state of being discharged to the second exhaust unit 50 .

The control unit 60 controls the rotation speed of the suction fan 52, and can adjust the speed at which the cleaning gas A is supplied from the second air supply unit 40 to the inside of the chamber 10, and the speed at which the cleaning gas A reacts inside the chamber 10 to generate smoke F 1. The speed at which the flue gas F inside the chamber 10 is discharged from the second exhaust portion 50 can adjust the amount of flue gas F generated and discharged.

In this way, the control unit 60 has an effect capable of adjusting the generation amount and the emission amount of flue gas F.

The problem with the conventional semiconductor process equipment is that it cannot be confirmed whether the smoke F inside the chamber 10 is sufficiently removed. Therefore, the problem is that it can only rely on the subjective judgment or empirical data of the operator to determine whether the flue gas F is sufficiently removed.

In order to solve this problem, the semiconductor process apparatus 100 with a cleaning function according to the present invention further includes a detection device 53 that detects the residual amount of the flue gas F.

The detection device 53 is provided in the second exhaust section 50 and detects the remaining amount of the flue gas F discharged outside the chamber 10.

In this case, the detection device 53 may be a device that directly detects hydrogen chloride or detects the presence or absence of molecules constituting hydrogen chloride to detect the residual amount of flue gas F.

The driving of the second gas supply part 40 and the second exhaust part 50 may be operated based on the residual amount value of the flue gas F detected from the detection device 53, or the second gas supply part 40 and the second row may be controlled by the control part 60 The driving of the gas unit 50.

The residual amount value of the flue gas F detected from the detection device 53 is input to the control unit 60, and the control unit 60 can control the driving of the second air supply unit 40 and the second exhaust unit 50 based on the input value.

For example, based on the value input to the control unit 60, the driving of the second air supply unit 40 and the second exhaust unit 50 may be interrupted when the flue gas F is sufficiently removed, and based on the value input to the control unit 60, when the flue gas F When it is not sufficiently removed, the driving of the second air supply unit 40 and the second exhaust unit 50 can be continued.

According to this configuration, the detection device 53 confirms the residual amount of the flue gas F discharged from the second exhaust section 50, and thereby confirms the flue gas F inside the chamber 10 based on the residual amount value of the flue gas F measured by the detection device 53 Based on this, it can be objectively judged whether the flue gas F is sufficiently removed.

In this way, the detection device 53 has an effect of being able to objectively determine whether the flue gas F is sufficiently removed.

On the other hand, the residual amount value of the flue gas F detected by the detection device 53 is input to the control unit 60, and based on the input value, the driving of the second air supply unit 40 and the second exhaust unit 50 can be controlled.

In addition, the residual amount value of the flue gas F detected by the detection device 53 is input to the control unit 60, the input value is compared with the reference set value, the rotation speed of the suction fan 52 is adjusted, and the reaction time of the cleaning gas A is adjusted, thereby The amount of flue gas F can be adjusted.

For example, the residual amount value of the flue gas F detected from the detection device 53 is input to the control unit 60, and when the input value is smaller than the reference set value, it is determined that the exhaust gas is emitted at a faster speed before the flue gas F is generated by the reaction of the cleaning gas A, and the control The portion 60 reduces the rotation speed of the suction fan 52 and increases the time for the cleaning gas A to react, so that the amount of flue gas F generated can be increased.

In addition, the residual amount value of the flue gas F detected from the detection device 53 is input to the control unit 60, and when the input value is larger than the reference set value, it is determined that the amount of flue gas F generated by the reaction with the cleaning gas A is emitted compared to the amount The speed is slow, and the control unit 60 increases the rotation speed of the suction fan 52 to reduce the reaction time of the cleaning gas A, thereby reducing the amount of smoke F generated.

In this way, the detection device 53 and the control unit 60 have the effect that the amount of smoke F generated can be adjusted according to the situation.

A problem with the conventional semiconductor process equipment is that the flue gas F is fixed to the second exhaust portion 50 in the form of powder due to a decrease in temperature.

In order to solve this problem, as shown in FIG. 2, the semiconductor processing apparatus 100 with a cleaning function according to the present invention further includes a heating device 70.

The heating device 70 may be provided on the side of the second gas supply part 40 or the second exhaust part 50 to heat the flue gas F. FIG. 2 shows that the heating device 70 is arranged on the side of the second air supply portion 40, but this is only an example and is not limited thereto.

The heating device 70 may be a heating jacket (HEATER JACKET) or a heating tube that wraps the pipes of the second air supply part 40 or the second exhaust part 50.

At this time, a gas or liquid that is a heat conductor that transfers heat may be circulated inside the heating tube.

The heating device 70 can raise the temperature of the flue gas F by heating the duct of the second gas supply part 40 or the second exhaust part 50.

In this way, when the temperature of the flue gas F is increased, it has the effect of preventing the flue gas F from being fixed in the interior of the chamber 10 in the form of powder.

Hereinafter, referring to FIG. 3 and FIG. 4 together, a method for cleaning a semiconductor process apparatus using the above-mentioned semiconductor process apparatus 100 will be specifically described.

Referring to FIG. 3, in step S1, the control section 60 interrupts the discharge of the process gas G from the first exhaust section 20 to the interior of the chamber 10. Then, the inert gas N is supplied into the chamber 10 from the first gas supply unit 30 until the reference set pressure is reached.

At this time, the interruption of the discharge of the process gas G from the first exhaust part 20 into the chamber 10 may be to interrupt the driving of the pump or cut off the pumping pipeline connecting the chamber 10 and the pump, so that the flue gas F can pass through The first exhaust section 20 does not emit.

As shown in FIG. 3, the process gas G is discharged from the first exhaust portion 20 into the chamber 10 until the step S1 is reached. As a result, as shown in FIG. 4, the process gas G inside the chamber 10 decreases. After that, in step S1, at the time point when the discharge of the process gas G is interrupted, as the inert gas N is supplied from the first gas supply part 30 into the chamber 10, the inert gas N inside the chamber 10 arrives from step S1 The period of step S2 increases.

Next, in step S2, when the pressure inside the chamber 10 reaches the reference set pressure, the supply of the inert gas N from the first gas supply part 30 is interrupted, and the second exhaust part 50 is activated.

At this time, the reference set pressure may mean a pressure that is relatively larger than the pressure during the etching process and smaller than the atmospheric pressure, or the reference set pressure may mean a pressure at the atmospheric pressure level.

In addition, as shown in FIG. 3, a step of interrupting the supply of the inert gas N from the first gas supply part 30 and a step of activating the second exhaust part 50 are shown in sequence, but not limited to this, the control part 60 may also be simultaneously The step of interrupting the supply of the inert gas N from the first gas supply unit 30 and the step of activating the second exhaust unit 50 may be performed, or the inert gas N from the first gas supply unit 30 may be interrupted after the second exhaust unit 50 is activated Supply.

The second exhaust portion 50 is activated to form a gas flow inside the chamber 10 so that the inert gas N inside the chamber 10 is discharged to the outside of the chamber 10. At this time, in the step of forming the air flow inside the chamber 10, after the suction fan 52 is activated, the exhaust valve 51 is opened, so that an air flow that discharges the inert gas N to the second exhaust portion 50 can be formed inside the chamber 10.

Next, in step S3, the cleaning gas A is supplied into the chamber 10 from the second gas supply unit 40.

At this time, the cleaning gas A may be atmospheric gas containing moisture.

The reason why the flow of the inert gas N is discharged to the second exhaust portion 50 after the cleaning gas A is supplied to the inside of the chamber 10 is if the cleaning gas is supplied to the inside of the chamber 10 before the flow of the exhaust gas to the second exhaust portion 50 is formed A, because the pressure inside the chamber 10 is greater than the pressure outside the chamber 10, an air flow is formed toward the second air supply section 40, and the flue gas F leaks out of the chamber 10 through the second air supply section 40, thereby contaminating the chamber The surrounding environment outside the chamber 10 has a harmful effect on the workers.

In this way, after forming a flow of inert gas N to the second exhaust portion 50 and then supplying the cleaning gas A to the inside of the chamber 10, there is an effect that the flue gas F can be prevented from leaking to the outside of the chamber 10 through the second air supply portion 40 .

As shown in FIG. 4, in step S1, in order to increase the pressure inside the chamber 10 whose pressure decreases due to the discharge of the process gas G, the inert gas N may be supplied from the first gas supply portion 30 to gradually increase the inside of the chamber 10 pressure.

Next, in step S2, when the pressure inside the chamber 10 reaches the reference set pressure, the supply of the inert gas N from the first gas supply part 30 is interrupted, and the second exhaust part 50 is activated.

When the second exhaust portion 50 is activated, the inert gas N is discharged through the second exhaust portion 50, the inert gas N inside the chamber 10 gradually decreases, and the pressure inside the chamber 10 decreases.

Next, in step S3, the inert gas N gradually decreases, and the pressure inside the chamber 10 becomes lower than the pressure outside the chamber 10. Therefore, the amount of the cleaning gas A corresponding to the reduction amount of the inert gas N from the second gas supply section 40 flows into the chamber 10.

The second exhaust portion 50 keeps the pressure inside the chamber 10 lower than the pressure outside the chamber 10, so that the cleaning gas A continues to flow into the chamber 10 from the second gas supply portion 40.

In this way, by adjusting the pressure in the second exhaust portion 50 and the inside of the chamber 10, there is an effect that the cleaning gas A continues to flow into the inside of the chamber 10.

The embodiments of the present invention have been described above with reference to the drawings, but it is understandable to those who have general knowledge in the technical field to which the present invention belongs, without changing the technical idea or essential features of the present invention. Implementation. Therefore, it should be understood that the above-described embodiments are exemplary rather than limiting in all aspects.

100‧‧‧Semiconductor process equipment 10‧‧‧ chamber 20‧‧‧Exhaust Department 30‧‧‧ First Gas Supply Department 40‧‧‧Second Gas Supply Department 50‧‧‧Second Exhaust Department 51‧‧‧Exhaust valve 52‧‧‧Suction fan 53‧‧‧Detection device 60‧‧‧Control Department 70‧‧‧Heating device G‧‧‧Process gas N‧‧‧Inert gas A‧‧‧Clean gas F‧‧‧Fume

FIG. 1 is a diagram illustrating a semiconductor process device having a cleaning function according to the present invention.

FIG. 2 is a diagram illustrating a semiconductor process equipment including a control unit, a detection device, and a heating device in the semiconductor process equipment of FIG. 1.

FIG. 3 is a diagram illustrating the order and method of controlling each configuration in order to execute the cleaning method of the semiconductor process equipment of the present invention.

4 is a diagram illustrating air supply and discharge inside the chamber when cleaning is performed according to the cleaning method of FIG. 3.

100‧‧‧Semiconductor process equipment

10‧‧‧ chamber

20‧‧‧Exhaust Department

30‧‧‧ First Gas Supply Department

40‧‧‧Second Gas Supply Department

50‧‧‧Second Exhaust Department

51‧‧‧Exhaust valve

52‧‧‧Suction fan

G‧‧‧Process gas

N‧‧‧Inert gas

A‧‧‧Clean gas

F‧‧‧Fume

Claims (10)

A semiconductor process equipment with a cleaning function, wherein the semiconductor process equipment with a cleaning function includes: One chamber, providing substrate processing space inside; A first exhaust section to discharge process gas from inside the chamber; A first gas supply part, supplying an inert gas to the interior of the chamber; A second gas supply section, supplying a clean gas to the inside of the chamber to generate a smoke gas inside the chamber; and, A second exhaust part discharges the inert gas, the cleaning gas, the flue gas or a mixed gas from the inside of the chamber, the mixed gas being mixed with the inert gas, the cleaning gas and the flue gas. The semiconductor process equipment with cleaning function as described in item 1 of the patent scope, wherein, The second exhaust section includes: An exhaust valve connected to the chamber and opening and closing the discharge of the inert gas, the cleaning gas, the flue gas or the mixed gas; and, A suction fan adjusts the discharge amount of the inert gas, the cleaning gas, the flue gas or the mixed gas. The semiconductor process equipment with cleaning function as described in item 2 of the patent application scope, wherein, The semiconductor process equipment also includes a control unit that controls the suction fan, The control unit controls the rotation speed of the suction fan. The semiconductor process equipment with cleaning function as described in item 3 of the patent application scope, wherein, The semiconductor process equipment also includes a detection device, which is provided in the second exhaust portion and detects the residual amount of the flue gas, The value of the remaining amount of the flue gas detected by the detection device is input to the control section, and the input value is compared with a reference set value to adjust the rotation speed of the suction fan. The semiconductor process equipment with cleaning function as described in item 1 of the patent scope, wherein, The semiconductor process equipment further includes a control section that controls one or more of the first exhaust section, the first air supply section, the second air supply section, and the second exhaust section, The control unit controls one or more of the first exhaust unit, the first air supply unit, the second air supply unit, and the second exhaust unit, or controls the first exhaust unit, the first Two or more of the air supply unit, the second air supply unit, and the second exhaust unit. The semiconductor process equipment with cleaning function as described in item 1 of the patent scope, wherein, The semiconductor process equipment also includes a detection device, which is disposed on the second exhaust portion and detects the residual amount of the flue gas. The semiconductor process equipment with cleaning function as described in item 6 of the patent application scope, wherein, The semiconductor process equipment further includes a control unit that inputs the value of the detected residual amount of the flue gas from the detection device, The detected value of the remaining amount is input from the detection device to the control unit, and the control unit controls the driving of the second air supply unit and the second exhaust unit based on the input value. The semiconductor process equipment with cleaning function as described in item 1 of the patent scope, wherein, The semiconductor process equipment further includes a heating device disposed on the side of the second gas supply portion or the second exhaust portion, and heating the flue gas. A cleaning method of semiconductor process equipment is removed by a semiconductor process equipment including a first exhaust part, a first air supply part, a second air supply part and a second exhaust part connected to a chamber A flue gas existing inside the chamber, wherein the cleaning method includes the following steps: Supplying an inert gas from the first gas supply part to the inside of the chamber until the inside of the chamber reaches a reference set pressure; After the pressure inside the chamber reaches the reference set pressure, interrupt the supply of the inert gas from the first gas supply section; Activate the second exhaust section to form an air flow inside the chamber so that the inert gas inside the chamber is discharged outside the chamber; and, A clean gas is supplied from the second gas supply part to the inside of the chamber. The cleaning method of semiconductor process equipment as described in item 9 of the patent scope, wherein, In the step of supplying the cleaning gas, the cleaning gas replaces the inert gas and keeps the pressure inside the chamber lower than the pressure outside the chamber, thereby continuously flowing into the interior of the chamber from the second gas supply portion Clean gas.

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