TWI695156B - 半導體晶圓的評價方法及半導體晶圓的製造方法 - Google Patents
半導體晶圓的評價方法及半導體晶圓的製造方法 Download PDFInfo
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- TWI695156B TWI695156B TW108112293A TW108112293A TWI695156B TW I695156 B TWI695156 B TW I695156B TW 108112293 A TW108112293 A TW 108112293A TW 108112293 A TW108112293 A TW 108112293A TW I695156 B TWI695156 B TW I695156B
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- Prior art keywords
- semiconductor wafer
- circle
- curve
- evaluation
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 203
- 238000011156 evaluation Methods 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 119
- 235000012431 wafers Nutrition 0.000 claims description 241
- 238000000034 method Methods 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 8
- 230000004069 differentiation Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 6
- 230000001066 destructive effect Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018077370 | 2018-04-13 | ||
JP2018-077370 | 2018-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202004125A TW202004125A (zh) | 2020-01-16 |
TWI695156B true TWI695156B (zh) | 2020-06-01 |
Family
ID=68163216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108112293A TWI695156B (zh) | 2018-04-13 | 2019-04-09 | 半導體晶圓的評價方法及半導體晶圓的製造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7040608B2 (ko) |
KR (1) | KR102518971B1 (ko) |
CN (1) | CN112020764B (ko) |
DE (1) | DE112019001948T5 (ko) |
TW (1) | TWI695156B (ko) |
WO (1) | WO2019198458A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993537A (zh) * | 2019-12-20 | 2020-04-10 | 徐州鑫晶半导体科技有限公司 | 确定半导体晶圆边缘抛光形状的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007205864A (ja) * | 2006-02-01 | 2007-08-16 | Reitetsukusu:Kk | 基盤検査装置、及び、基盤検査方法 |
KR101202883B1 (ko) * | 2007-10-23 | 2012-11-19 | 시바우라 메카트로닉스 가부시키가이샤 | 원반형 기판의 검사 장치 |
TW201332043A (zh) * | 2011-12-02 | 2013-08-01 | Kobe Steel Ltd | 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法 |
JP5318784B2 (ja) * | 2007-02-23 | 2013-10-16 | ルドルフテクノロジーズ インコーポレイテッド | エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法 |
US9904994B2 (en) * | 2013-12-24 | 2018-02-27 | Lg Siltron Incorporated | Method and apparatus for analyzing shape of wafer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100339969C (zh) * | 2000-11-16 | 2007-09-26 | 信越半导体株式会社 | 晶片形状评价法、装置及器件制造法,晶片及晶片挑选法 |
JP3838341B2 (ja) * | 2001-09-14 | 2006-10-25 | 信越半導体株式会社 | ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法 |
JP2004022677A (ja) * | 2002-06-13 | 2004-01-22 | Shin Etsu Handotai Co Ltd | 半導体ウエーハ |
KR101203505B1 (ko) | 2005-04-19 | 2012-11-21 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 처리 장치 및 기판 처리 방법 |
JP5621702B2 (ja) | 2011-04-26 | 2014-11-12 | 信越半導体株式会社 | 半導体ウェーハ及びその製造方法 |
US9052190B2 (en) * | 2013-03-12 | 2015-06-09 | Kla-Tencor Corporation | Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections |
JP6020869B2 (ja) | 2016-02-12 | 2016-11-02 | 株式会社東京精密 | ウェーハ形状測定装置及び方法、並びにウェーハ面取り装置 |
JP6673122B2 (ja) * | 2016-09-29 | 2020-03-25 | 株式会社Sumco | シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法 |
-
2019
- 2019-03-22 KR KR1020207032385A patent/KR102518971B1/ko active IP Right Grant
- 2019-03-22 JP JP2020513156A patent/JP7040608B2/ja active Active
- 2019-03-22 WO PCT/JP2019/011954 patent/WO2019198458A1/ja active Application Filing
- 2019-03-22 DE DE112019001948.1T patent/DE112019001948T5/de active Pending
- 2019-03-22 CN CN201980025203.7A patent/CN112020764B/zh active Active
- 2019-04-09 TW TW108112293A patent/TWI695156B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007205864A (ja) * | 2006-02-01 | 2007-08-16 | Reitetsukusu:Kk | 基盤検査装置、及び、基盤検査方法 |
JP5318784B2 (ja) * | 2007-02-23 | 2013-10-16 | ルドルフテクノロジーズ インコーポレイテッド | エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法 |
KR101202883B1 (ko) * | 2007-10-23 | 2012-11-19 | 시바우라 메카트로닉스 가부시키가이샤 | 원반형 기판의 검사 장치 |
TW201332043A (zh) * | 2011-12-02 | 2013-08-01 | Kobe Steel Ltd | 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法 |
US9904994B2 (en) * | 2013-12-24 | 2018-02-27 | Lg Siltron Incorporated | Method and apparatus for analyzing shape of wafer |
Also Published As
Publication number | Publication date |
---|---|
JP7040608B2 (ja) | 2022-03-23 |
KR20200140893A (ko) | 2020-12-16 |
JPWO2019198458A1 (ja) | 2021-05-13 |
WO2019198458A1 (ja) | 2019-10-17 |
CN112020764B (zh) | 2024-02-20 |
DE112019001948T5 (de) | 2021-01-21 |
TW202004125A (zh) | 2020-01-16 |
KR102518971B1 (ko) | 2023-04-05 |
CN112020764A (zh) | 2020-12-01 |
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