TWI695156B - 半導體晶圓的評價方法及半導體晶圓的製造方法 - Google Patents

半導體晶圓的評價方法及半導體晶圓的製造方法 Download PDF

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Publication number
TWI695156B
TWI695156B TW108112293A TW108112293A TWI695156B TW I695156 B TWI695156 B TW I695156B TW 108112293 A TW108112293 A TW 108112293A TW 108112293 A TW108112293 A TW 108112293A TW I695156 B TWI695156 B TW I695156B
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Taiwan
Prior art keywords
semiconductor wafer
circle
curve
evaluation
manufacturing
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TW108112293A
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English (en)
Chinese (zh)
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TW202004125A (zh
Inventor
村上賢史
高梨啓一
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日商Sumco股份有限公司
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Publication of TW202004125A publication Critical patent/TW202004125A/zh
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Publication of TWI695156B publication Critical patent/TWI695156B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/255Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108112293A 2018-04-13 2019-04-09 半導體晶圓的評價方法及半導體晶圓的製造方法 TWI695156B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018077370 2018-04-13
JP2018-077370 2018-04-13

Publications (2)

Publication Number Publication Date
TW202004125A TW202004125A (zh) 2020-01-16
TWI695156B true TWI695156B (zh) 2020-06-01

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ID=68163216

Family Applications (1)

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TW108112293A TWI695156B (zh) 2018-04-13 2019-04-09 半導體晶圓的評價方法及半導體晶圓的製造方法

Country Status (6)

Country Link
JP (1) JP7040608B2 (ko)
KR (1) KR102518971B1 (ko)
CN (1) CN112020764B (ko)
DE (1) DE112019001948T5 (ko)
TW (1) TWI695156B (ko)
WO (1) WO2019198458A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993537A (zh) * 2019-12-20 2020-04-10 徐州鑫晶半导体科技有限公司 确定半导体晶圆边缘抛光形状的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205864A (ja) * 2006-02-01 2007-08-16 Reitetsukusu:Kk 基盤検査装置、及び、基盤検査方法
KR101202883B1 (ko) * 2007-10-23 2012-11-19 시바우라 메카트로닉스 가부시키가이샤 원반형 기판의 검사 장치
TW201332043A (zh) * 2011-12-02 2013-08-01 Kobe Steel Ltd 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
US9904994B2 (en) * 2013-12-24 2018-02-27 Lg Siltron Incorporated Method and apparatus for analyzing shape of wafer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100339969C (zh) * 2000-11-16 2007-09-26 信越半导体株式会社 晶片形状评价法、装置及器件制造法,晶片及晶片挑选法
JP3838341B2 (ja) * 2001-09-14 2006-10-25 信越半導体株式会社 ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法
JP2004022677A (ja) * 2002-06-13 2004-01-22 Shin Etsu Handotai Co Ltd 半導体ウエーハ
KR101203505B1 (ko) 2005-04-19 2012-11-21 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치 및 기판 처리 방법
JP5621702B2 (ja) 2011-04-26 2014-11-12 信越半導体株式会社 半導体ウェーハ及びその製造方法
US9052190B2 (en) * 2013-03-12 2015-06-09 Kla-Tencor Corporation Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections
JP6020869B2 (ja) 2016-02-12 2016-11-02 株式会社東京精密 ウェーハ形状測定装置及び方法、並びにウェーハ面取り装置
JP6673122B2 (ja) * 2016-09-29 2020-03-25 株式会社Sumco シリコンウェーハの評価方法、シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205864A (ja) * 2006-02-01 2007-08-16 Reitetsukusu:Kk 基盤検査装置、及び、基盤検査方法
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
KR101202883B1 (ko) * 2007-10-23 2012-11-19 시바우라 메카트로닉스 가부시키가이샤 원반형 기판의 검사 장치
TW201332043A (zh) * 2011-12-02 2013-08-01 Kobe Steel Ltd 貼合基板之旋轉偏移量計測裝置、貼合基板之旋轉偏移量計測方法及貼合基板之製造方法
US9904994B2 (en) * 2013-12-24 2018-02-27 Lg Siltron Incorporated Method and apparatus for analyzing shape of wafer

Also Published As

Publication number Publication date
JP7040608B2 (ja) 2022-03-23
KR20200140893A (ko) 2020-12-16
JPWO2019198458A1 (ja) 2021-05-13
WO2019198458A1 (ja) 2019-10-17
CN112020764B (zh) 2024-02-20
DE112019001948T5 (de) 2021-01-21
TW202004125A (zh) 2020-01-16
KR102518971B1 (ko) 2023-04-05
CN112020764A (zh) 2020-12-01

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